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Priority to TW94114627ApriorityCriticalpatent/TWI261873B/en
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Publication of TW200639927ApublicationCriticalpatent/TW200639927A/en
The present invention relates to a novel semiconductor fabrication process, which is characterized by a plasma pretreatment and/or a subsequent Cu film annealing treatment. With the steps of the treatment, it is able to deposit CVD Cu film with low resistivity and high aspect ratio of Cu(111)/Cu(200), so as to improve the characteristics of the CVD Cu film.
TW94114627A2005-05-062005-05-06Plasma treatment to lower CVD Cu film resistivity and enhance Cu(111)/Cu(200) peak ratio
TWI261873B
(en)
Chromium-free etching solution for si-substrates and sige-substrates, method for revealing defects using the etching solution and process for treating si-substrates and sige-substrates using the etching solution