TW200639927A - Plasma treatment to lower CVD Cu film resistivity and enhance Cu(111)/Cu(200) peak ratio - Google Patents

Plasma treatment to lower CVD Cu film resistivity and enhance Cu(111)/Cu(200) peak ratio

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Publication number
TW200639927A
TW200639927A TW094114627A TW94114627A TW200639927A TW 200639927 A TW200639927 A TW 200639927A TW 094114627 A TW094114627 A TW 094114627A TW 94114627 A TW94114627 A TW 94114627A TW 200639927 A TW200639927 A TW 200639927A
Authority
TW
Taiwan
Prior art keywords
enhance
plasma treatment
peak ratio
film
film resistivity
Prior art date
Application number
TW094114627A
Other languages
Chinese (zh)
Other versions
TWI261873B (en
Inventor
Mao-Chieh Chen
Cheng-Li Lin
Peng-Sen Chen
Original Assignee
Univ Nat Chiao Tung
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Chiao Tung filed Critical Univ Nat Chiao Tung
Priority to TW94114627A priority Critical patent/TWI261873B/en
Application granted granted Critical
Publication of TWI261873B publication Critical patent/TWI261873B/en
Publication of TW200639927A publication Critical patent/TW200639927A/en

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Abstract

The present invention relates to a novel semiconductor fabrication process, which is characterized by a plasma pretreatment and/or a subsequent Cu film annealing treatment. With the steps of the treatment, it is able to deposit CVD Cu film with low resistivity and high aspect ratio of Cu(111)/Cu(200), so as to improve the characteristics of the CVD Cu film.
TW94114627A 2005-05-06 2005-05-06 Plasma treatment to lower CVD Cu film resistivity and enhance Cu(111)/Cu(200) peak ratio TWI261873B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94114627A TWI261873B (en) 2005-05-06 2005-05-06 Plasma treatment to lower CVD Cu film resistivity and enhance Cu(111)/Cu(200) peak ratio

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94114627A TWI261873B (en) 2005-05-06 2005-05-06 Plasma treatment to lower CVD Cu film resistivity and enhance Cu(111)/Cu(200) peak ratio

Publications (2)

Publication Number Publication Date
TWI261873B TWI261873B (en) 2006-09-11
TW200639927A true TW200639927A (en) 2006-11-16

Family

ID=37987026

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94114627A TWI261873B (en) 2005-05-06 2005-05-06 Plasma treatment to lower CVD Cu film resistivity and enhance Cu(111)/Cu(200) peak ratio

Country Status (1)

Country Link
TW (1) TWI261873B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502646B (en) * 2010-12-23 2015-10-01 Intel Corp Cobalt metal barrier layers

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI502646B (en) * 2010-12-23 2015-10-01 Intel Corp Cobalt metal barrier layers

Also Published As

Publication number Publication date
TWI261873B (en) 2006-09-11

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MM4A Annulment or lapse of patent due to non-payment of fees