TW200636235A - Fabrication method for integrated micro sensor, and micro sensor made with the same - Google Patents

Fabrication method for integrated micro sensor, and micro sensor made with the same

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Publication number
TW200636235A
TW200636235A TW094110607A TW94110607A TW200636235A TW 200636235 A TW200636235 A TW 200636235A TW 094110607 A TW094110607 A TW 094110607A TW 94110607 A TW94110607 A TW 94110607A TW 200636235 A TW200636235 A TW 200636235A
Authority
TW
Taiwan
Prior art keywords
humidity
sensing
variation
sensor
temperature
Prior art date
Application number
TW094110607A
Other languages
Chinese (zh)
Other versions
TWI283297B (en
Inventor
Xiang-Yi Weng
Ching-Liang Dai
Original Assignee
Univ Nat Chunghsing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Chunghsing filed Critical Univ Nat Chunghsing
Priority to TW94110607A priority Critical patent/TWI283297B/en
Publication of TW200636235A publication Critical patent/TW200636235A/en
Application granted granted Critical
Publication of TWI283297B publication Critical patent/TWI283297B/en

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Abstract

The present invention provides a fabrication method for integrated micro sensor, and the micro sensor made with the same, which employs the MEMS technology of semiconductor processing to fabricate the micro sensor of integrated temperature, humidity circuit. The structural design of the sensor employs the semiconductor process, CMOS, to capture the moisture by the humidity variation in the air through the moisture-absorption material, and indirectly affect the sensing capacitor below the material, so as to generate the variation of capacitance, and combine the variation with the sensing circuit to provide the signal with optimal processing. As for the temperature sensing, there are two types of sensing, in which one is the thermopile sensing, and the other one is the thermoresistive sensing, and both of them employ the existing CMOS processing material to design and fabricate. With the temperature variation, the characteristics of the material will also be changed, and the temperature of the chip could be measured by an external instrument. Because the temperature variation in the air would also affect the humidity variation, the present invention adds the temperature sensor for humidity compensation. Below the humidity sensing electrode, it is added with a heater designed with polysilicon material, which could prevent the humidity sensor from attachment of moisture on the surface of humidity sensing film under high humidity through using the heater to heat the attached moisture, so as to improve the precision of humidity sensor.
TW94110607A 2005-04-01 2005-04-01 Fabrication method for integrated micro sensor, and micro sensor made with the same TWI283297B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW94110607A TWI283297B (en) 2005-04-01 2005-04-01 Fabrication method for integrated micro sensor, and micro sensor made with the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW94110607A TWI283297B (en) 2005-04-01 2005-04-01 Fabrication method for integrated micro sensor, and micro sensor made with the same

Publications (2)

Publication Number Publication Date
TW200636235A true TW200636235A (en) 2006-10-16
TWI283297B TWI283297B (en) 2007-07-01

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW94110607A TWI283297B (en) 2005-04-01 2005-04-01 Fabrication method for integrated micro sensor, and micro sensor made with the same

Country Status (1)

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TW (1) TWI283297B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111912881A (en) * 2019-05-09 2020-11-10 林宗宏 Thermoelectric nano sensor and manufacturing method and application method thereof
US10843919B2 (en) 2018-12-28 2020-11-24 Industrial Technology Research Institute Microelectromechanical system apparatus with heater

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104634832B (en) * 2015-02-28 2018-01-05 苏州工业园区纳米产业技术研究院有限公司 CMOS MEMS capacitive humidity sensors and preparation method thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10843919B2 (en) 2018-12-28 2020-11-24 Industrial Technology Research Institute Microelectromechanical system apparatus with heater
CN111912881A (en) * 2019-05-09 2020-11-10 林宗宏 Thermoelectric nano sensor and manufacturing method and application method thereof
CN111912881B (en) * 2019-05-09 2024-01-09 林宗宏 Thermoelectric nanosensor and method of making and using same

Also Published As

Publication number Publication date
TWI283297B (en) 2007-07-01

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MM4A Annulment or lapse of patent due to non-payment of fees