TW200633038A - Means to eliminate bubble entrapment during electrochemical processing of workpiece surface - Google Patents
Means to eliminate bubble entrapment during electrochemical processing of workpiece surfaceInfo
- Publication number
- TW200633038A TW200633038A TW094140578A TW94140578A TW200633038A TW 200633038 A TW200633038 A TW 200633038A TW 094140578 A TW094140578 A TW 094140578A TW 94140578 A TW94140578 A TW 94140578A TW 200633038 A TW200633038 A TW 200633038A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrochemical processing
- during electrochemical
- workpiece surface
- eliminate bubble
- bubble entrapment
- Prior art date
Links
- 239000000758 substrate Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 2
- 239000012530 fluid Substances 0.000 abstract 1
- 238000007654 immersion Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23H—WORKING OF METAL BY THE ACTION OF A HIGH CONCENTRATION OF ELECTRIC CURRENT ON A WORKPIECE USING AN ELECTRODE WHICH TAKES THE PLACE OF A TOOL; SUCH WORKING COMBINED WITH OTHER FORMS OF WORKING OF METAL
- B23H5/00—Combined machining
- B23H5/06—Electrochemical machining combined with mechanical working, e.g. grinding or honing
- B23H5/08—Electrolytic grinding
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
- C25D17/008—Current shielding devices
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/04—Electroplating with moving electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
- H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/7684—Smoothing; Planarisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Sustainable Development (AREA)
- Life Sciences & Earth Sciences (AREA)
- Mechanical Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
- Weting (AREA)
Abstract
Methods and systems are provided to eliminate bubble entrapment during electrochemical processing of a substrate, wherein a rigid plate (500) with fluid openings (520) allow process solution (505) to flow between the front surface (510) of the substrate (503) and an electrode (506). The plate (500) includes a protruding region (524). In operation, the protruding region causes a raised solution surface (526) to touch the front surface (510) of the wafer prior to complete immersion of the substrate (503) in the solution (505).
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63511204P | 2004-11-19 | 2004-11-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW200633038A true TW200633038A (en) | 2006-09-16 |
Family
ID=36407480
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094140578A TW200633038A (en) | 2004-11-19 | 2005-11-18 | Means to eliminate bubble entrapment during electrochemical processing of workpiece surface |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN101056718A (en) |
TW (1) | TW200633038A (en) |
WO (1) | WO2006055766A1 (en) |
Families Citing this family (18)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8475636B2 (en) | 2008-11-07 | 2013-07-02 | Novellus Systems, Inc. | Method and apparatus for electroplating |
US9822461B2 (en) | 2006-08-16 | 2017-11-21 | Novellus Systems, Inc. | Dynamic current distribution control apparatus and method for wafer electroplating |
US8858774B2 (en) | 2008-11-07 | 2014-10-14 | Novellus Systems, Inc. | Electroplating apparatus for tailored uniformity profile |
US10233556B2 (en) | 2010-07-02 | 2019-03-19 | Lam Research Corporation | Dynamic modulation of cross flow manifold during electroplating |
US9523155B2 (en) | 2012-12-12 | 2016-12-20 | Novellus Systems, Inc. | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9318358B2 (en) | 2011-04-28 | 2016-04-19 | Infineon Technologies Ag | Etching device and a method for etching a material of a workpiece |
US9909228B2 (en) | 2012-11-27 | 2018-03-06 | Lam Research Corporation | Method and apparatus for dynamic current distribution control during electroplating |
KR102214898B1 (en) * | 2012-12-12 | 2021-02-10 | 노벨러스 시스템즈, 인코포레이티드 | Enhancement of electrolyte hydrodynamics for efficient mass transfer during electroplating |
US9670588B2 (en) | 2013-05-01 | 2017-06-06 | Lam Research Corporation | Anisotropic high resistance ionic current source (AHRICS) |
US9752248B2 (en) | 2014-12-19 | 2017-09-05 | Lam Research Corporation | Methods and apparatuses for dynamically tunable wafer-edge electroplating |
US9567685B2 (en) | 2015-01-22 | 2017-02-14 | Lam Research Corporation | Apparatus and method for dynamic control of plated uniformity with the use of remote electric current |
US9816194B2 (en) | 2015-03-19 | 2017-11-14 | Lam Research Corporation | Control of electrolyte flow dynamics for uniform electroplating |
US10014170B2 (en) | 2015-05-14 | 2018-07-03 | Lam Research Corporation | Apparatus and method for electrodeposition of metals with the use of an ionically resistive ionically permeable element having spatially tailored resistivity |
US9988733B2 (en) | 2015-06-09 | 2018-06-05 | Lam Research Corporation | Apparatus and method for modulating azimuthal uniformity in electroplating |
US10364505B2 (en) | 2016-05-24 | 2019-07-30 | Lam Research Corporation | Dynamic modulation of cross flow manifold during elecroplating |
US11001934B2 (en) | 2017-08-21 | 2021-05-11 | Lam Research Corporation | Methods and apparatus for flow isolation and focusing during electroplating |
US10781527B2 (en) | 2017-09-18 | 2020-09-22 | Lam Research Corporation | Methods and apparatus for controlling delivery of cross flowing and impinging electrolyte during electroplating |
CN115044958B (en) * | 2022-06-07 | 2024-05-28 | 赛莱克斯微***科技(北京)有限公司 | Wafer electroplating liquid return pipe and wafer electroplating equipment |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6413388B1 (en) * | 2000-02-23 | 2002-07-02 | Nutool Inc. | Pad designs and structures for a versatile materials processing apparatus |
-
2005
- 2005-11-18 TW TW094140578A patent/TW200633038A/en unknown
- 2005-11-18 WO PCT/US2005/041798 patent/WO2006055766A1/en active Application Filing
- 2005-11-18 CN CN 200580038413 patent/CN101056718A/en active Pending
Also Published As
Publication number | Publication date |
---|---|
CN101056718A (en) | 2007-10-17 |
WO2006055766A1 (en) | 2006-05-26 |
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