TW200630748A - Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel - Google Patents

Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel

Info

Publication number
TW200630748A
TW200630748A TW094144733A TW94144733A TW200630748A TW 200630748 A TW200630748 A TW 200630748A TW 094144733 A TW094144733 A TW 094144733A TW 94144733 A TW94144733 A TW 94144733A TW 200630748 A TW200630748 A TW 200630748A
Authority
TW
Taiwan
Prior art keywords
resin composition
photosensitive resin
thin film
film panel
panel made
Prior art date
Application number
TW094144733A
Other languages
Chinese (zh)
Inventor
Hi-Kuk Lee
Yuko Yako
Kyu-Young Kim
Original Assignee
Samsung Electronics Co Ltd
Sumitomo Chemical Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd, Sumitomo Chemical Co filed Critical Samsung Electronics Co Ltd
Publication of TW200630748A publication Critical patent/TW200630748A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H01L21/0212—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC the material being fluoro carbon compounds, e.g.(CFx) n, (CHxFy) n or polytetrafluoroethylene
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0048—Photosensitive materials characterised by the solvents or agents facilitating spreading, e.g. tensio-active agents
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by physical means, e.g. sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/312—Organic layers, e.g. photoresist
    • H01L21/3121—Layers comprising organo-silicon compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14632—Wafer-level processed structures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0046—Photosensitive materials with perfluoro compounds, e.g. for dry lithography
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1248—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or shape of the interlayer dielectric specially adapted to the circuit arrangement

Abstract

A photosensitive resin composition includes an alkali-soluble resin, a quinone diazide, a surfactant, and a solvent. The surfactant includes an organic fluorine compound having the structure, a first silicone compound having the structure, and a second silicone compound having the structure, The resin composition may be used in display panels.
TW094144733A 2004-12-24 2005-12-16 Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel TW200630748A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020040112255A KR101209049B1 (en) 2004-12-24 2004-12-24 Photosensitive resin and thin film panel comprising pattern made of the photosensitive resin and method for manufacturing the thin film panel

Publications (1)

Publication Number Publication Date
TW200630748A true TW200630748A (en) 2006-09-01

Family

ID=36612046

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094144733A TW200630748A (en) 2004-12-24 2005-12-16 Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel

Country Status (5)

Country Link
US (2) US7297452B2 (en)
JP (1) JP4663515B2 (en)
KR (1) KR101209049B1 (en)
CN (1) CN1800981B (en)
TW (1) TW200630748A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI454533B (en) * 2009-03-05 2014-10-01 Nippon Steel & Sumikin Chem Co Phase-difference film and method for forming same
US8853695B2 (en) 2006-10-13 2014-10-07 Kobe Steel, Ltd. Thin film transistor substrate including source-drain electrodes formed from a nitrogen-containing layer or an oxygen/nitrogen-containing layer

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101142999B1 (en) * 2005-02-03 2012-05-08 주식회사 삼양이엠에스 Photoresist composition, method for forming a pattern using the same, and method for manufacturing thin film transistor array panel using the same
KR101298940B1 (en) * 2005-08-23 2013-08-22 주식회사 동진쎄미켐 Photoresist composition and method of manufacturing thin film transistor substrate using the same
JP5003081B2 (en) * 2005-09-28 2012-08-15 東レ株式会社 Photosensitive siloxane composition, cured film formed therefrom, and device having cured film
KR20070039238A (en) * 2005-10-07 2007-04-11 삼성전자주식회사 Organic thin film transistor array panel and method for manufacturing the same
KR101288411B1 (en) * 2005-12-02 2013-07-22 삼성디스플레이 주식회사 Photosensitive resin composition, method for forming a photoresist pattern and method for manufacturing a display substrate using the same
US20070254246A1 (en) * 2006-04-26 2007-11-01 Konica Minolta Medical & Graphic, Inc. Developer used for planographic printing plate material and processing method by use thereof
KR101255512B1 (en) * 2006-06-30 2013-04-16 엘지디스플레이 주식회사 Method For Fabricating Thin Film Transistor Array Substrate
JP4849251B2 (en) * 2007-01-18 2012-01-11 Ｊｓｒ株式会社 Radiation-sensitive resin composition, interlayer insulating film and microlens, and production method thereof
US7830646B2 (en) 2007-09-25 2010-11-09 Ioxus, Inc. Multi electrode series connected arrangement supercapacitor
US7678514B2 (en) * 2007-12-27 2010-03-16 Sumitomo Bakelite Co., Ltd. Positive-type photosensitive resin composition, cured film, protecting film, insulating film and semiconductor device and display device using these films
US8411413B2 (en) 2008-08-28 2013-04-02 Ioxus, Inc. High voltage EDLC cell and method for the manufacture thereof
US20090279230A1 (en) * 2008-05-08 2009-11-12 Renewable Energy Development, Inc. Electrode structure for the manufacture of an electric double layer capacitor
KR20100006952A (en) * 2008-07-11 2010-01-22 삼성전자주식회사 Photoresist composition, method of forming a metal pattern using the same, and method of manufacturing a display substrate
TWI521300B (en) * 2008-11-18 2016-02-11 Sumitomo Chemical Co Photosensitive resin composition and display device
KR101625939B1 (en) * 2009-12-22 2016-06-01 삼성디스플레이 주식회사 Printing plate for gravure printing, method of manufacturing the same, and method of forming printing pattern using the printing plate
JP5884486B2 (en) * 2010-09-30 2016-03-15 三菱マテリアル株式会社 Composition for antireflection film for solar cell, antireflection film for solar cell, method for producing antireflection film for solar cell, and solar cell
JP5924760B2 (en) * 2011-12-06 2016-05-25 東京応化工業株式会社 Method for producing resist for spinless coating
JP6155823B2 (en) * 2012-07-12 2017-07-05 Jsr株式会社 Organic EL device, radiation-sensitive resin composition, and cured film
US10190015B2 (en) * 2014-06-03 2019-01-29 The Chemours Company Fc, Llc Passivation layer comprising a photocrosslinked fluoropolymer
TWI561920B (en) * 2014-12-22 2016-12-11 Chi Mei Corp Photosensitive polysiloxane composition, protecting film, and element having the protecting film
CN108776979A (en) * 2018-07-04 2018-11-09 安图实验仪器(郑州)有限公司 Utilize the method for image measurement plating medium bacterial strain diameter
KR20210080428A (en) 2018-10-18 2021-06-30 스미또모 베이크라이트 가부시키가이샤 Electronic device provided with photosensitive resin composition, cured film, and cured film, and its manufacturing method
KR20210074562A (en) * 2019-12-12 2021-06-22 엘지디스플레이 주식회사 Display apparatus comprising thin film transistor and method for manufactorung the same

Family Cites Families (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4374920A (en) * 1981-07-27 1983-02-22 American Hoechst Corporation Positive developer containing non-ionic surfactants
JP2779936B2 (en) * 1988-06-13 1998-07-23 コニカ株式会社 Photosensitive lithographic printing plate
JP3112229B2 (en) 1993-06-30 2000-11-27 東京応化工業株式会社 Positive photoresist composition
JPH0862834A (en) 1994-08-22 1996-03-08 Mitsubishi Chem Corp Photoresist composition
JPH09267574A (en) * 1996-03-29 1997-10-14 Konica Corp Photosensitive planographic printing plate
JP4032444B2 (en) * 1996-10-11 2008-01-16 株式会社日立製作所 Article having super-water-repellent surface capable of controlling light, and printing machine using the same
GB9622657D0 (en) * 1996-10-31 1997-01-08 Horsell Graphic Ind Ltd Direct positive lithographic plate
GB9811813D0 (en) * 1998-06-03 1998-07-29 Horsell Graphic Ind Ltd Polymeric compounds
JP4010658B2 (en) 1998-07-24 2007-11-21 富士フイルムエレクトロニクスマテリアルズ株式会社 Black matrix forming material for color liquid crystal display device and black matrix forming method
JP3945556B2 (en) 1998-12-17 2007-07-18 東京応化工業株式会社 Positive photoresist coating liquid for liquid crystal device manufacturing and substrate using the same
US6479211B1 (en) * 1999-05-26 2002-11-12 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
US6787283B1 (en) * 1999-07-22 2004-09-07 Fuji Photo Film Co., Ltd. Positive photoresist composition for far ultraviolet exposure
JP2001201855A (en) 2000-01-17 2001-07-27 Fuji Photo Film Co Ltd Positive photoresist composition for exposure with far ultraviolet rays
JP2001281861A (en) * 2000-04-03 2001-10-10 Fujifilm Arch Co Ltd Positive type photosensitive resin composition
JP2002006483A (en) * 2000-06-20 2002-01-09 Sumitomo Chem Co Ltd Photoresist composition
JP2003029412A (en) * 2001-07-12 2003-01-29 Fuji Photo Film Co Ltd Original plate for planographic printing plate and plate making method for planographic printing plate
JP2003195518A (en) 2001-12-14 2003-07-09 Shipley Co Llc Photoresist developer
JP2003255533A (en) 2001-12-25 2003-09-10 Sumitomo Bakelite Co Ltd Positive photosensitive resin composition and semiconductor device
JP4373082B2 (en) * 2001-12-28 2009-11-25 富士通株式会社 Alkali-soluble siloxane polymer, positive resist composition, resist pattern and method for producing the same, and electronic circuit device and method for producing the same
US6797453B2 (en) * 2002-01-24 2004-09-28 Jsr Corporation Radiation sensitive composition for forming an insulating film, insulating film and display device
JP2004107562A (en) * 2002-09-20 2004-04-08 Jsr Corp Radiation sensitive composition for forming interlayer insulation film of liquid crystal display element, interlayer insulation film formed therefrom and liquid crystal display element
US6984476B2 (en) * 2002-04-15 2006-01-10 Sharp Kabushiki Kaisha Radiation-sensitive resin composition, forming process for forming patterned insulation film, active matrix board and flat-panel display device equipped with the same, and process for producing flat-panel display device
TWI263867B (en) * 2002-04-18 2006-10-11 Nissan Chemical Ind Ltd Positively photosensitive resin composition and method of pattern formation
JP4214732B2 (en) 2002-06-25 2009-01-28 Ｄｉｃ株式会社 Fluorosurfactant
KR100973799B1 (en) 2003-01-03 2010-08-03 삼성전자주식회사 Photoresist composition for multi-micro nozzle head coater
TWI313397B (en) * 2003-03-28 2009-08-11 Sumitomo Chemical Co Colored photosensitive resin composition
TWI304917B (en) * 2003-05-20 2009-01-01 Tokyo Ohka Kogyo Co Ltd Positive photoresist composition for discharge nozzle type application and resist pattern formation method
US7491590B2 (en) * 2004-05-28 2009-02-17 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing thin film transistor in display device
JP4474256B2 (en) * 2004-09-30 2010-06-02 富士フイルム株式会社 Resist composition and pattern forming method using the same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8853695B2 (en) 2006-10-13 2014-10-07 Kobe Steel, Ltd. Thin film transistor substrate including source-drain electrodes formed from a nitrogen-containing layer or an oxygen/nitrogen-containing layer
TWI454533B (en) * 2009-03-05 2014-10-01 Nippon Steel & Sumikin Chem Co Phase-difference film and method for forming same

Also Published As

Publication number Publication date
US20060141393A1 (en) 2006-06-29
JP2006184908A (en) 2006-07-13
US20070254221A1 (en) 2007-11-01
CN1800981B (en) 2010-12-01
CN1800981A (en) 2006-07-12
KR20060073825A (en) 2006-06-29
KR101209049B1 (en) 2012-12-07
US7297452B2 (en) 2007-11-20
JP4663515B2 (en) 2011-04-06

Similar Documents

Publication Publication Date Title
TW200630748A (en) Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel
TW200628978A (en) Photosensitive resin composition, thin film panel made with photosensitive resin composition, and method for manufacturing thin film panel
TW200802276A (en) Light-emitting display device, electronic apparatus, aging correction device, and program
WO2007137264A3 (en) Watch display comprising light sources with a translucent cover
TW200718269A (en) Organic light emitting display and method of fabricating the same
TW200617604A (en) Composition for forming antireflective film and method for forming wiring using the same
WO2009036213A3 (en) Interferometric modulator display devices
TWI263458B (en) Flat display panel and black matrix thereof
WO2006014247A3 (en) Interferometric modulators with thin film transistors and manufacturing method thereof
TW200641459A (en) Reflector in liquid crystal display device and method of fabricating the same
TW200513759A (en) Liquid crystal display panel
TW200726313A (en) Display device and method for fabricating display device
TW200612158A (en) Optical film, assembly and display device
WO2009117792A3 (en) Introduced disposition in support for plasma television sets and its similar
TW200643490A (en) Antireflection film, polarizing plate, and image display device
TW200632547A (en) Photosensitive resin composition, thin film panel including a layer made from photosensitive resin composition, and method for manufacturing thin film panel
EP2136606A4 (en) Organic thin film transistor substrate, its manufacturing method, image display panel, and its manufacturing method
TW200720805A (en) Electrode structure of electrochromic device
TW200725122A (en) Liquid crystal display device having organic alignment layer and fabrication method thereof
WO2002037570A3 (en) Semiconductor device and method of making same
TW200644045A (en) A display panel and a rescue method thereof
TW200611010A (en) Flat display module
EP1737045A4 (en) Substrate with organic thin film, transistor using same, and methods for producing those
TW200715011A (en) Common electrode panel, manufacturing method thereof, and liquid crystal display including the panel
TW200734826A (en) Exposing method for manufacturing flat panel display