TW200628941A - Display device and method for manufacturing the same - Google Patents

Display device and method for manufacturing the same

Info

Publication number
TW200628941A
TW200628941A TW094138144A TW94138144A TW200628941A TW 200628941 A TW200628941 A TW 200628941A TW 094138144 A TW094138144 A TW 094138144A TW 94138144 A TW94138144 A TW 94138144A TW 200628941 A TW200628941 A TW 200628941A
Authority
TW
Taiwan
Prior art keywords
display device
electrode layer
layer
manufacturing
same
Prior art date
Application number
TW094138144A
Other languages
Chinese (zh)
Other versions
TWI395028B (en
Inventor
Kengo Akimoto
Hotaka Maruyama
Norihito Sone
Hisao Ikeda
Junichiro Sakata
Satoshi Seo
Original Assignee
Semiconductor Energy Lab Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab Co Ltd filed Critical Semiconductor Energy Lab Co Ltd
Publication of TW200628941A publication Critical patent/TW200628941A/en
Application granted granted Critical
Publication of TWI395028B publication Critical patent/TWI395028B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H10K50/155—Hole transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Optics & Photonics (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

It is an object of the invention to manufacture a highly reliable display device at a low cost with high yield. A display device of the invention includes: a first reflective electrode layer; and a second transparent electrode layer with an electroluminescent layer interposed therebetween, wherein the electroluminescent layer has a layer containing an organic compound and an inorganic compound, and the first electrode layer contains an aluminum alloy containing at least one or more selected from the group consisting of molybdenum, titanium, and carbon.
TW094138144A 2004-11-04 2005-10-31 Display device and method for manufacturing the same TWI395028B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004320381 2004-11-04

Publications (2)

Publication Number Publication Date
TW200628941A true TW200628941A (en) 2006-08-16
TWI395028B TWI395028B (en) 2013-05-01

Family

ID=36260787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094138144A TWI395028B (en) 2004-11-04 2005-10-31 Display device and method for manufacturing the same

Country Status (4)

Country Link
US (1) US20060091397A1 (en)
KR (1) KR101217111B1 (en)
CN (1) CN1808722B (en)
TW (1) TWI395028B (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI399603B (en) * 2007-10-01 2013-06-21 Japan Display West Inc Liquid crystal display device
TWI559448B (en) * 2007-03-26 2016-11-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI569455B (en) * 2009-12-11 2017-02-01 半導體能源研究所股份有限公司 Semiconductor device and electronic device

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1739205A (en) * 2003-01-17 2006-02-22 二极管技术公司 Display employing organic material
US7888702B2 (en) 2005-04-15 2011-02-15 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of the display device
US8288197B2 (en) * 2005-04-27 2012-10-16 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device including a memory device comprising an insulator mixture region in a conductive layer
US8999836B2 (en) * 2005-05-13 2015-04-07 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing display device
DE602007013634D1 (en) * 2006-02-10 2011-05-19 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
US7696024B2 (en) * 2006-03-31 2010-04-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
CN103030148B (en) * 2006-04-04 2015-02-25 太阳能原材料公司 Method for purifying silicon
GB0614083D0 (en) * 2006-07-14 2006-08-23 Imp Innovations Ltd A hybrid organic light emitting device
US9741901B2 (en) 2006-11-07 2017-08-22 Cbrite Inc. Two-terminal electronic devices and their methods of fabrication
CN101622712B (en) * 2006-11-07 2011-06-15 希百特股份有限公司 Two-terminal switching devices and their methods of fabrication
US7898042B2 (en) 2006-11-07 2011-03-01 Cbrite Inc. Two-terminal switching devices and their methods of fabrication
JP5355970B2 (en) * 2008-09-16 2013-11-27 株式会社ジャパンディスプレイ Liquid crystal display
EP2178133B1 (en) 2008-10-16 2019-09-18 Semiconductor Energy Laboratory Co., Ltd. Flexible Light-Emitting Device, Electronic Device, and Method for Manufacturing Flexible-Light Emitting Device
KR102469154B1 (en) 2008-10-24 2022-11-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device and method for manufacturing the same
TWI654754B (en) 2008-11-28 2019-03-21 日商半導體能源研究所股份有限公司 Liquid crystal display device
CN102549638B (en) * 2009-10-09 2015-04-01 株式会社半导体能源研究所 Light-emitting display device and electronic device including the same
KR102134294B1 (en) * 2010-04-02 2020-07-15 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Semiconductor device
TWI449004B (en) * 2010-08-30 2014-08-11 Au Optronics Corp Pixel structure and manufacturing method thereof
US8766253B2 (en) * 2010-09-10 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5969216B2 (en) * 2011-02-11 2016-08-17 株式会社半導体エネルギー研究所 Light emitting element, display device, lighting device, and manufacturing method thereof
KR102059167B1 (en) 2013-07-30 2020-02-07 엘지디스플레이 주식회사 Flexible Organic Electroluminescence Device and Method for fabricating of the same
KR20150043136A (en) 2013-10-14 2015-04-22 삼성디스플레이 주식회사 Organic light emitting display device and manufacturing method thereof
AT14576U1 (en) * 2014-08-20 2016-01-15 Plansee Se Metallization for a thin film device, method of making the same and sputtering target
US9799713B2 (en) * 2015-07-23 2017-10-24 Apple Inc. Organic light-emitting diode display with barrier layer
CN105097841B (en) * 2015-08-04 2018-11-23 深圳市华星光电技术有限公司 The production method and TFT substrate of TFT substrate
KR102453921B1 (en) 2015-09-03 2022-10-13 삼성디스플레이 주식회사 Organic light emitting display and manufacturing method thereof
TWI726006B (en) * 2016-07-15 2021-05-01 日商半導體能源研究所股份有限公司 Display device, input and output device, data processing device
CN106094366B (en) * 2016-08-23 2019-02-01 深圳市华星光电技术有限公司 The production method and IPS type array substrate of IPS type array substrate
KR20200046196A (en) * 2018-10-23 2020-05-07 삼성디스플레이 주식회사 Display device and method of manufacturing the same
KR20210025738A (en) * 2019-08-27 2021-03-10 삼성디스플레이 주식회사 Display apparatus and method of manufacturing the same

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4720432A (en) * 1987-02-11 1988-01-19 Eastman Kodak Company Electroluminescent device with organic luminescent medium
JP3587537B2 (en) * 1992-12-09 2004-11-10 株式会社半導体エネルギー研究所 Semiconductor device
US5624868A (en) * 1994-04-15 1997-04-29 Micron Technology, Inc. Techniques for improving adhesion of silicon dioxide to titanium
US6979882B1 (en) * 1996-07-16 2005-12-27 Semiconductor Energy Laboratory Co., Ltd. Electronic device and method for manufacturing the same
JP3759999B2 (en) * 1996-07-16 2006-03-29 株式会社半導体エネルギー研究所 Semiconductor device, liquid crystal display device, EL device, TV camera display device, personal computer, car navigation system, TV projection device, and video camera
JPH10275683A (en) 1997-03-28 1998-10-13 Fuji Electric Co Ltd Thin film layered conductor
TW531684B (en) * 1997-03-31 2003-05-11 Seiko Epson Corporatoin Display device and method for manufacturing the same
KR100627091B1 (en) * 1997-08-21 2006-09-22 세이코 엡슨 가부시키가이샤 Active matrix display
JPH11251067A (en) * 1998-03-02 1999-09-17 Junji Kido Organic electroluminescence element
US6313481B1 (en) * 1998-08-06 2001-11-06 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and a method of manufacturing the same
JP2000276078A (en) * 1999-03-23 2000-10-06 Sanyo Electric Co Ltd Organic electroluminescence display device
TW515109B (en) * 1999-06-28 2002-12-21 Semiconductor Energy Lab EL display device and electronic device
US6420056B1 (en) * 1999-07-08 2002-07-16 International Business Machines Corporation Electroluminescent device with dye-containing organic-inorganic hybrid materials as an emitting layer
TW494447B (en) * 2000-02-01 2002-07-11 Semiconductor Energy Lab Semiconductor device and manufacturing method thereof
WO2001058222A1 (en) * 2000-02-02 2001-08-09 Mitsubishi Chemical Corporation Organic electroluminescent element and method of manufacture thereof
TW521303B (en) * 2000-02-28 2003-02-21 Semiconductor Energy Lab Electronic device
US6608449B2 (en) * 2000-05-08 2003-08-19 Semiconductor Energy Laboratory Co., Ltd. Luminescent apparatus and method of manufacturing the same
JP4713010B2 (en) 2000-05-08 2011-06-29 株式会社半導体エネルギー研究所 Light emitting device and manufacturing method thereof
JP4788852B2 (en) * 2000-07-25 2011-10-05 住友金属鉱山株式会社 Transparent conductive substrate, manufacturing method thereof, transparent coating layer forming coating solution used in the manufacturing method, and display device to which transparent conductive substrate is applied
SG116443A1 (en) * 2001-03-27 2005-11-28 Semiconductor Energy Lab Wiring and method of manufacturing the same, and wiring board and method of manufacturing the same.
JP2003017264A (en) * 2001-04-27 2003-01-17 Canon Inc Electroluminescent element and image display device
JP4267266B2 (en) * 2001-07-10 2009-05-27 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
JP4152665B2 (en) * 2001-07-11 2008-09-17 株式会社半導体エネルギー研究所 Light emitting device and manufacturing method thereof
JP2003089864A (en) * 2001-09-18 2003-03-28 Mitsui Mining & Smelting Co Ltd Aluminum alloy thin film, wiring circuit having the same thin film, and target material depositing the thin film
JP4275336B2 (en) * 2001-11-16 2009-06-10 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device
CN100517422C (en) * 2002-03-07 2009-07-22 三洋电机株式会社 Distributing structure, its manufacturing method and optical equipment
JP4493931B2 (en) * 2002-05-13 2010-06-30 株式会社半導体エネルギー研究所 Display device
TWI272556B (en) * 2002-05-13 2007-02-01 Semiconductor Energy Lab Display device
US7081704B2 (en) * 2002-08-09 2006-07-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US6861338B2 (en) * 2002-08-22 2005-03-01 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor and method of manufacturing the same
JP2004207084A (en) * 2002-12-25 2004-07-22 Semiconductor Energy Lab Co Ltd Light emitting device and its manufacturing method
US7164228B2 (en) * 2002-12-27 2007-01-16 Seiko Epson Corporation Display panel and electronic apparatus with the same
US7452257B2 (en) 2002-12-27 2008-11-18 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a display device
US7057208B2 (en) * 2003-03-25 2006-06-06 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method thereof
JP2004296963A (en) * 2003-03-28 2004-10-21 Semiconductor Energy Lab Co Ltd Semiconductor device and method for producing the semiconductor device
US7862906B2 (en) * 2003-04-09 2011-01-04 Semiconductor Energy Laboratory Co., Ltd. Electroluminescent element and light-emitting device
US7520790B2 (en) * 2003-09-19 2009-04-21 Semiconductor Energy Laboratory Co., Ltd. Display device and manufacturing method of display device
TW201220527A (en) * 2003-09-26 2012-05-16 Semiconductor Energy Lab Light-emitting element and method for manufacturing the same
CN100499035C (en) * 2003-10-03 2009-06-10 株式会社半导体能源研究所 Method for manufacturing semiconductor device
US7902747B2 (en) * 2003-10-21 2011-03-08 Semiconductor Energy Laboratory Co., Ltd. Light-emitting device having a thin insulating film made of nitrogen and silicon and an electrode made of conductive transparent oxide and silicon dioxide
US7170176B2 (en) * 2003-11-04 2007-01-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR100560792B1 (en) * 2004-03-23 2006-03-13 삼성에스디아이 주식회사 Top-emission type organic electroluminescence display device and method for fabricating of the same
JP4148182B2 (en) * 2004-05-17 2008-09-10 ソニー株式会社 Display device
US7834827B2 (en) * 2004-07-30 2010-11-16 Semiconductor Energy Laboratory Co., Ltd. Light emitting device and driving method thereof
KR100741129B1 (en) * 2006-06-05 2007-07-19 삼성에스디아이 주식회사 Back light unit, and lcd therewith

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI559448B (en) * 2007-03-26 2016-11-21 半導體能源研究所股份有限公司 Semiconductor device and method for manufacturing the same
TWI399603B (en) * 2007-10-01 2013-06-21 Japan Display West Inc Liquid crystal display device
TWI569455B (en) * 2009-12-11 2017-02-01 半導體能源研究所股份有限公司 Semiconductor device and electronic device
US9735180B2 (en) 2009-12-11 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10002888B2 (en) 2009-12-11 2018-06-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10312267B2 (en) 2009-12-11 2019-06-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10600818B2 (en) 2009-12-11 2020-03-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US10854641B2 (en) 2009-12-11 2020-12-01 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device
US11961843B2 (en) 2009-12-11 2024-04-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and electronic device

Also Published As

Publication number Publication date
US20060091397A1 (en) 2006-05-04
KR20060052371A (en) 2006-05-19
TWI395028B (en) 2013-05-01
CN1808722A (en) 2006-07-26
CN1808722B (en) 2010-06-16
KR101217111B1 (en) 2012-12-31

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