TW200627675A - Growth of Ⅲ-nitride light-emitting devices on textured substrates - Google Patents

Growth of Ⅲ-nitride light-emitting devices on textured substrates

Info

Publication number
TW200627675A
TW200627675A TW094132540A TW94132540A TW200627675A TW 200627675 A TW200627675 A TW 200627675A TW 094132540 A TW094132540 A TW 094132540A TW 94132540 A TW94132540 A TW 94132540A TW 200627675 A TW200627675 A TW 200627675A
Authority
TW
Taiwan
Prior art keywords
iii
growth
nitride light
emitting devices
textured substrates
Prior art date
Application number
TW094132540A
Other languages
English (en)
Other versions
TWI407580B (zh
Inventor
Andrew Y Kim
Steven A Maranowski
Original Assignee
Lumileds Lighting Llc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lumileds Lighting Llc filed Critical Lumileds Lighting Llc
Publication of TW200627675A publication Critical patent/TW200627675A/zh
Application granted granted Critical
Publication of TWI407580B publication Critical patent/TWI407580B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02378—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02428—Structure
    • H01L21/0243—Surface structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/08—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a plurality of light emitting regions, e.g. laterally discontinuous light emitting layer or photoluminescent region integrated within the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
TW094132540A 2004-09-23 2005-09-20 紋理基底上iii族氮化物發光裝置之成長 TWI407580B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/950,000 US7633097B2 (en) 2004-09-23 2004-09-23 Growth of III-nitride light emitting devices on textured substrates

Publications (2)

Publication Number Publication Date
TW200627675A true TW200627675A (en) 2006-08-01
TWI407580B TWI407580B (zh) 2013-09-01

Family

ID=35457652

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094132540A TWI407580B (zh) 2004-09-23 2005-09-20 紋理基底上iii族氮化物發光裝置之成長

Country Status (4)

Country Link
US (1) US7633097B2 (zh)
EP (1) EP1641051B1 (zh)
JP (1) JP5420137B2 (zh)
TW (1) TWI407580B (zh)

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US8878245B2 (en) 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device
TWI639243B (zh) 2010-03-24 2018-10-21 美商矽安尼克斯有限責任公司 具有加強電磁輻射偵測之裝置與相關方法
US10224359B2 (en) 2012-03-22 2019-03-05 Sionyx, Llc Pixel isolation elements, devices and associated methods
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10269861B2 (en) 2011-06-09 2019-04-23 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10347682B2 (en) 2013-06-29 2019-07-09 Sionyx, Llc Shallow trench textured regions and associated methods
US10361232B2 (en) 2009-09-17 2019-07-23 Sionyx, Llc Photosensitive imaging devices and associated methods
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods

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US7005679B2 (en) * 2003-05-01 2006-02-28 Cree, Inc. Multiple component solid state white light
JP2006324324A (ja) * 2005-05-17 2006-11-30 Sumitomo Electric Ind Ltd 発光装置、発光装置の製造方法および窒化物半導体基板
BRPI0620397A2 (pt) 2005-12-22 2011-11-16 Cree Led Lighting Solutions dispositivo de iluminação
JP2007300069A (ja) * 2006-04-04 2007-11-15 Toyoda Gosei Co Ltd 発光素子、この発光素子を用いた発光装置及びこの発光素子の製造方法
WO2007127029A2 (en) 2006-04-24 2007-11-08 Cree, Inc. Side-view surface mount white led
TW200802544A (en) * 2006-04-25 2008-01-01 Osram Opto Semiconductors Gmbh Composite substrate and method for making the same
TWI304278B (en) * 2006-06-16 2008-12-11 Ind Tech Res Inst Semiconductor emitting device substrate and method of fabricating the same
DE102006043400A1 (de) * 2006-09-15 2008-03-27 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterchip
US9318327B2 (en) * 2006-11-28 2016-04-19 Cree, Inc. Semiconductor devices having low threading dislocations and improved light extraction and methods of making the same
US7663148B2 (en) * 2006-12-22 2010-02-16 Philips Lumileds Lighting Company, Llc III-nitride light emitting device with reduced strain light emitting layer
US20080149946A1 (en) * 2006-12-22 2008-06-26 Philips Lumileds Lighting Company, Llc Semiconductor Light Emitting Device Configured To Emit Multiple Wavelengths Of Light
US20080197369A1 (en) * 2007-02-20 2008-08-21 Cree, Inc. Double flip semiconductor device and method for fabrication
KR101330251B1 (ko) * 2007-03-06 2013-11-15 서울바이오시스 주식회사 패터닝된 기판 상에 질화물 반도체층을 형성하는 방법 및그것을 갖는 발광 다이오드
US9431589B2 (en) 2007-12-14 2016-08-30 Cree, Inc. Textured encapsulant surface in LED packages
US7985979B2 (en) 2007-12-19 2011-07-26 Koninklijke Philips Electronics, N.V. Semiconductor light emitting device with light extraction structures
US8815618B2 (en) * 2008-08-29 2014-08-26 Tsmc Solid State Lighting Ltd. Light-emitting diode on a conductive substrate
KR20120094477A (ko) 2009-09-25 2012-08-24 크리, 인코포레이티드 낮은 눈부심 및 높은 광도 균일성을 갖는 조명 장치
US8203153B2 (en) 2010-01-15 2012-06-19 Koninklijke Philips Electronics N.V. III-V light emitting device including a light extracting structure
US8329482B2 (en) * 2010-04-30 2012-12-11 Cree, Inc. White-emitting LED chips and method for making same
US9324560B2 (en) 2011-09-06 2016-04-26 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
US10032956B2 (en) 2011-09-06 2018-07-24 Sensor Electronic Technology, Inc. Patterned substrate design for layer growth
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US8741341B2 (en) 2012-05-07 2014-06-03 Insys Therapeutics, Inc. Manufacturing and packaging room temperature stable dronabinol capsules
WO2014057748A1 (ja) * 2012-10-12 2014-04-17 住友電気工業株式会社 Ｉｉｉ族窒化物複合基板およびその製造方法、ならびにｉｉｉ族窒化物半導体デバイスの製造方法
CN104241262B (zh) 2013-06-14 2020-11-06 惠州科锐半导体照明有限公司 发光装置以及显示装置
US9548419B2 (en) 2014-05-20 2017-01-17 Southern Taiwan University Of Science And Technology Light emitting diode chip having multi microstructure substrate surface
US9496523B1 (en) * 2015-06-19 2016-11-15 Universal Display Corporation Devices and methods to improve light outcoupling from an OLED array
US10833222B2 (en) 2016-08-26 2020-11-10 The Penn State Research Foundation High light extraction efficiency (LEE) light emitting diode (LED)
US10090440B1 (en) * 2017-05-05 2018-10-02 Epistar Corporation Light-emitting device and method of manufacturing thereof
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Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10374109B2 (en) 2001-05-25 2019-08-06 President And Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
US10741399B2 (en) 2004-09-24 2020-08-11 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US10361083B2 (en) 2004-09-24 2019-07-23 President And Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US8878245B2 (en) 2006-11-30 2014-11-04 Cree, Inc. Transistors and method for making ohmic contact to transistors
US10361232B2 (en) 2009-09-17 2019-07-23 Sionyx, Llc Photosensitive imaging devices and associated methods
US9911781B2 (en) 2009-09-17 2018-03-06 Sionyx, Llc Photosensitive imaging devices and associated methods
TWI639243B (zh) 2010-03-24 2018-10-21 美商矽安尼克斯有限責任公司 具有加強電磁輻射偵測之裝置與相關方法
US10229951B2 (en) 2010-04-21 2019-03-12 Sionyx, Llc Photosensitive imaging devices and associated methods
US10505054B2 (en) 2010-06-18 2019-12-10 Sionyx, Llc High speed photosensitive devices and associated methods
US10269861B2 (en) 2011-06-09 2019-04-23 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
US10244188B2 (en) 2011-07-13 2019-03-26 Sionyx, Llc Biometric imaging devices and associated methods
US10224359B2 (en) 2012-03-22 2019-03-05 Sionyx, Llc Pixel isolation elements, devices and associated methods
US9939251B2 (en) 2013-03-15 2018-04-10 Sionyx, Llc Three dimensional imaging utilizing stacked imager devices and associated methods
US10347682B2 (en) 2013-06-29 2019-07-09 Sionyx, Llc Shallow trench textured regions and associated methods
US11069737B2 (en) 2013-06-29 2021-07-20 Sionyx, Llc Shallow trench textured regions and associated methods
USD826871S1 (en) 2014-12-11 2018-08-28 Cree, Inc. Light emitting diode device

Also Published As

Publication number Publication date
US7633097B2 (en) 2009-12-15
EP1641051A2 (en) 2006-03-29
JP2007128925A (ja) 2007-05-24
EP1641051A3 (en) 2011-09-21
EP1641051B1 (en) 2019-01-23
TWI407580B (zh) 2013-09-01
JP5420137B2 (ja) 2014-02-19
US20060060888A1 (en) 2006-03-23

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