TW200622038A - Solution for the selective removal of metal from aluminum substrates - Google Patents

Solution for the selective removal of metal from aluminum substrates

Info

Publication number
TW200622038A
TW200622038A TW093141577A TW93141577A TW200622038A TW 200622038 A TW200622038 A TW 200622038A TW 093141577 A TW093141577 A TW 093141577A TW 93141577 A TW93141577 A TW 93141577A TW 200622038 A TW200622038 A TW 200622038A
Authority
TW
Taiwan
Prior art keywords
solution
metal
selective removal
aluminum substrates
substrate
Prior art date
Application number
TW093141577A
Other languages
Chinese (zh)
Other versions
TWI373536B (en
Inventor
Jeremy W Epton
John Deem
Original Assignee
Boc Group Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Boc Group Inc filed Critical Boc Group Inc
Publication of TW200622038A publication Critical patent/TW200622038A/en
Application granted granted Critical
Publication of TWI373536B publication Critical patent/TWI373536B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/44Compositions for etching metallic material from a metallic material substrate of different composition
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00Etching, surface-brightening or pickling compositions
    • C09K13/04Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/08Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as ammonium fluoride (NH4F), ethylene glycol, and water. A method of selectively removing metal from a substrate using this solution is also disclosed.
TW093141577A 2004-12-22 2004-12-31 Solution for the selective removal of metal from aluminum substrates TWI373536B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US63830804P 2004-12-22 2004-12-22

Publications (2)

Publication Number Publication Date
TW200622038A true TW200622038A (en) 2006-07-01
TWI373536B TWI373536B (en) 2012-10-01

Family

ID=37165202

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093141577A TWI373536B (en) 2004-12-22 2004-12-31 Solution for the selective removal of metal from aluminum substrates

Country Status (2)

Country Link
KR (1) KR101173692B1 (en)
TW (1) TWI373536B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109423290A (en) * 2017-08-25 2019-03-05 弗萨姆材料美国有限责任公司 Etching solution for selectively removing tantalum nitride relative to titanium nitride in manufacturing semiconductor device

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8398779B2 (en) * 2009-03-02 2013-03-19 Applied Materials, Inc. Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates
KR101870244B1 (en) * 2017-04-19 2018-06-22 서울시립대학교 산학협력단 Method for manufacturing ultra-thin silicon strain gauge
KR102005178B1 (en) * 2018-02-07 2019-07-29 서울시립대학교 산학협력단 Fabrication of silicon strain gauge using photoresist passivation layer

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020119245A1 (en) * 2001-02-23 2002-08-29 Steven Verhaverbeke Method for etching electronic components containing tantalum

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109423290A (en) * 2017-08-25 2019-03-05 弗萨姆材料美国有限责任公司 Etching solution for selectively removing tantalum nitride relative to titanium nitride in manufacturing semiconductor device
CN109423290B (en) * 2017-08-25 2021-11-19 弗萨姆材料美国有限责任公司 Etching solution for selectively removing tantalum nitride relative to titanium nitride in manufacturing semiconductor device

Also Published As

Publication number Publication date
TWI373536B (en) 2012-10-01
KR20060071826A (en) 2006-06-27
KR101173692B1 (en) 2012-08-13

Similar Documents

Publication Publication Date Title
WO2004037962A3 (en) Aqueous phosphoric acid compositions for cleaning semiconductor devices
TW200602817A (en) Composition for stripping and cleaning and use thereof
TWI266969B (en) Removing solution
MY127401A (en) Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
TW200636836A (en) Silicon electrode assembly surface decontamination by acidic solution
TW200940706A (en) Methods of cleaning semiconductor devices at the back end of line using amidoxime compositions
WO2006132989A3 (en) Cleaning method and solution for cleaning a wafer in a single wafer process
TW200420755A (en) Compositions for removing etching residue and use thereof
MY140466A (en) Process for making a germanium-zeolite
BR0204152B1 (en) process to remove metal coating from airfoil substrate.
WO2004102620A3 (en) Method to passivate conductive surfaces during semiconductor processing
TW200702435A (en) Phosphonic acid-containing formulation for cleaning semiconductor wafer and cleaning method
EP1126049A3 (en) Composition for desmutting aluminum
WO2005096747A3 (en) Highly selective silicon oxide etching compositions
WO2008089733A3 (en) Etching solution and etching method
TW200501255A (en) Method for removal of residue from a substrate
CA2558077A1 (en) Process for purifying mesotrione
NO20075670L (en) Compositions for the removal of etch- and ash-forming photoresist residues and bulk photoresist
TW200622038A (en) Solution for the selective removal of metal from aluminum substrates
EP1302569A3 (en) Stripping solution
TW200717633A (en) Semiconductor cleaning formulation containing phosphonic acid and ascorbic acid, and cleaning method
AU2003267259A1 (en) Method of removing entrained sulfuric acid from alkylate background of the invention
TW200519197A (en) Tungsten metal removing solution and method for removing tungsten metal by use thereof
TW200717646A (en) Method and system for etching silicon oxide and silicon nitride with high selectivity relative to silicon
ATE296271T1 (en) METHOD FOR ETCHING THE SURFACE OF A BIOACTIVE GLASS