TW200622038A - Solution for the selective removal of metal from aluminum substrates - Google Patents
Solution for the selective removal of metal from aluminum substratesInfo
- Publication number
- TW200622038A TW200622038A TW093141577A TW93141577A TW200622038A TW 200622038 A TW200622038 A TW 200622038A TW 093141577 A TW093141577 A TW 093141577A TW 93141577 A TW93141577 A TW 93141577A TW 200622038 A TW200622038 A TW 200622038A
- Authority
- TW
- Taiwan
- Prior art keywords
- solution
- metal
- selective removal
- aluminum substrates
- substrate
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K13/00—Etching, surface-brightening or pickling compositions
- C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
- C09K13/08—Etching, surface-brightening or pickling compositions containing an inorganic acid containing a fluorine compound
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
The present disclosure relates to a solution for selectively removing metal, such as Ta or TaN, from a substrate, such as an aluminum containing substrate. The solution comprises an acid, such as HF or buffered HF, an ingredient comprising a fluorine ion, such as ammonium fluoride (NH4F), ethylene glycol, and water. A method of selectively removing metal from a substrate using this solution is also disclosed.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US63830804P | 2004-12-22 | 2004-12-22 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200622038A true TW200622038A (en) | 2006-07-01 |
TWI373536B TWI373536B (en) | 2012-10-01 |
Family
ID=37165202
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093141577A TWI373536B (en) | 2004-12-22 | 2004-12-31 | Solution for the selective removal of metal from aluminum substrates |
Country Status (2)
Country | Link |
---|---|
KR (1) | KR101173692B1 (en) |
TW (1) | TWI373536B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109423290A (en) * | 2017-08-25 | 2019-03-05 | 弗萨姆材料美国有限责任公司 | Etching solution for selectively removing tantalum nitride relative to titanium nitride in manufacturing semiconductor device |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8398779B2 (en) * | 2009-03-02 | 2013-03-19 | Applied Materials, Inc. | Non destructive selective deposition removal of non-metallic deposits from aluminum containing substrates |
KR101870244B1 (en) * | 2017-04-19 | 2018-06-22 | 서울시립대학교 산학협력단 | Method for manufacturing ultra-thin silicon strain gauge |
KR102005178B1 (en) * | 2018-02-07 | 2019-07-29 | 서울시립대학교 산학협력단 | Fabrication of silicon strain gauge using photoresist passivation layer |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020119245A1 (en) * | 2001-02-23 | 2002-08-29 | Steven Verhaverbeke | Method for etching electronic components containing tantalum |
-
2004
- 2004-12-31 TW TW093141577A patent/TWI373536B/en active
-
2005
- 2005-01-21 KR KR1020050005664A patent/KR101173692B1/en active IP Right Grant
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109423290A (en) * | 2017-08-25 | 2019-03-05 | 弗萨姆材料美国有限责任公司 | Etching solution for selectively removing tantalum nitride relative to titanium nitride in manufacturing semiconductor device |
CN109423290B (en) * | 2017-08-25 | 2021-11-19 | 弗萨姆材料美国有限责任公司 | Etching solution for selectively removing tantalum nitride relative to titanium nitride in manufacturing semiconductor device |
Also Published As
Publication number | Publication date |
---|---|
TWI373536B (en) | 2012-10-01 |
KR20060071826A (en) | 2006-06-27 |
KR101173692B1 (en) | 2012-08-13 |
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