TW200619268A - Composition containing polyamic acid used for forming sublayer anti-reflective film - Google Patents

Composition containing polyamic acid used for forming sublayer anti-reflective film

Info

Publication number
TW200619268A
TW200619268A TW094129891A TW94129891A TW200619268A TW 200619268 A TW200619268 A TW 200619268A TW 094129891 A TW094129891 A TW 094129891A TW 94129891 A TW94129891 A TW 94129891A TW 200619268 A TW200619268 A TW 200619268A
Authority
TW
Taiwan
Prior art keywords
composition containing
polyamic acid
reflective film
acid used
containing polyamic
Prior art date
Application number
TW094129891A
Other languages
Chinese (zh)
Other versions
TWI389935B (en
Inventor
Tadashi Hatanaka
Takahiro Sakaguchi
Tomoyuki Enomoto
Shigeo Kimura
Original Assignee
Nissan Chemical Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nissan Chemical Ind Ltd filed Critical Nissan Chemical Ind Ltd
Publication of TW200619268A publication Critical patent/TW200619268A/en
Application granted granted Critical
Publication of TWI389935B publication Critical patent/TWI389935B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/091—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers characterised by antireflection means or light filtering or absorbing means, e.g. anti-halation, contrast enhancement

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Structural Engineering (AREA)
  • Architecture (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
  • Materials For Photolithography (AREA)
  • Epoxy Resins (AREA)

Abstract

The present invention provides a composition of sublayer anti-reflection film which can be developed by an alkaline developer used for photoresist development in a lithography process of manufacting semicondustor device, and also provides a forming method of photoresist patten by using the same. Such composition comprises a polyamide acid, with at least two epoxy groups, a light-absorbing compound having a molar light absorption coefficient of 5,000-100,000 (l/molm) to light with wavelength of 365 nm, and a solvent.
TW94129891A 2004-09-03 2005-08-30 Composition for forming sublayer anti-reflective coating containing polyamic acid TWI389935B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004256655 2004-09-03

Publications (2)

Publication Number Publication Date
TW200619268A true TW200619268A (en) 2006-06-16
TWI389935B TWI389935B (en) 2013-03-21

Family

ID=36036238

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94129891A TWI389935B (en) 2004-09-03 2005-08-30 Composition for forming sublayer anti-reflective coating containing polyamic acid

Country Status (5)

Country Link
JP (1) JP4466877B2 (en)
KR (1) KR101118697B1 (en)
CN (2) CN103163736A (en)
TW (1) TWI389935B (en)
WO (1) WO2006027950A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426093B (en) * 2009-03-10 2014-02-11 Lg Chemical Ltd Polyimide-based polymers, copolymers thereof and positive type photoresist compositions comprising the same
US8669038B2 (en) 2009-03-10 2014-03-11 Lg Chem, Ltd. Polyimide-based polymers, copolymers thereof and positive type photoresist compositions comprising the same
TWI575023B (en) * 2013-10-18 2017-03-21 Toray Industries A polyamide resin composition, a production method, and a molded product

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7563563B2 (en) 2006-04-18 2009-07-21 International Business Machines Corporation Wet developable bottom antireflective coating composition and method for use thereof
KR102058760B1 (en) 2011-10-10 2019-12-23 브레우어 사이언스 인코포레이션 Spin-on carbon compositions for lithographic processing
JP7073845B2 (en) * 2018-03-28 2022-05-24 日産化学株式会社 Polymer and resin composition containing it
US11022885B2 (en) * 2018-08-31 2021-06-01 Taiwan Semiconductor Manufacturing Co., Ltd. Photosensitive middle layer
TW202302689A (en) * 2021-03-04 2023-01-16 日商日產化學股份有限公司 Protection film formation composition

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0572736A (en) * 1991-09-18 1993-03-26 Hitachi Chem Co Ltd Production of fluorine-contained polyimide resin film pattern
US5397684A (en) * 1993-04-27 1995-03-14 International Business Machines Corporation Antireflective polyimide dielectric for photolithography
JP3031214B2 (en) * 1995-09-11 2000-04-10 信越化学工業株式会社 Anti-reflective coating material
JP2000007783A (en) * 1998-06-23 2000-01-11 Hitachi Chemical Dupont Microsystems Ltd Polyimide precursor resin composition and preparation thereof
US6455416B1 (en) * 2000-10-24 2002-09-24 Advanced Micro Devices, Inc. Developer soluble dyed BARC for dual damascene process
US6927012B2 (en) * 2001-07-26 2005-08-09 Nissan Chemical Industries, Ltd. Polyamic acid resin composition
US7261997B2 (en) * 2002-01-17 2007-08-28 Brewer Science Inc. Spin bowl compatible polyamic acids/imides as wet developable polymer binders for anti-reflective coatings
KR101195468B1 (en) * 2004-10-14 2012-10-30 닛산 가가쿠 고교 가부시키 가이샤 Composition for forming bottom anti-reflective coating containing aromatic sulfonic acid ester compound and light photoacid-generating agent

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426093B (en) * 2009-03-10 2014-02-11 Lg Chemical Ltd Polyimide-based polymers, copolymers thereof and positive type photoresist compositions comprising the same
US8669038B2 (en) 2009-03-10 2014-03-11 Lg Chem, Ltd. Polyimide-based polymers, copolymers thereof and positive type photoresist compositions comprising the same
TWI575023B (en) * 2013-10-18 2017-03-21 Toray Industries A polyamide resin composition, a production method, and a molded product

Also Published As

Publication number Publication date
WO2006027950A1 (en) 2006-03-16
JPWO2006027950A1 (en) 2008-05-08
KR101118697B1 (en) 2012-03-12
CN101010634A (en) 2007-08-01
KR20070048237A (en) 2007-05-08
CN103163736A (en) 2013-06-19
TWI389935B (en) 2013-03-21
JP4466877B2 (en) 2010-05-26

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