TW200614345A - Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent - Google Patents

Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent

Info

Publication number
TW200614345A
TW200614345A TW094128435A TW94128435A TW200614345A TW 200614345 A TW200614345 A TW 200614345A TW 094128435 A TW094128435 A TW 094128435A TW 94128435 A TW94128435 A TW 94128435A TW 200614345 A TW200614345 A TW 200614345A
Authority
TW
Taiwan
Prior art keywords
agent
fine patterns
forming fine
over
coating
Prior art date
Application number
TW094128435A
Other languages
Chinese (zh)
Other versions
TWI263263B (en
Inventor
Yoshiki Sugeta
Naohisa Ueno
Toshikazu Tachikawa
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200614345A publication Critical patent/TW200614345A/en
Application granted granted Critical
Publication of TWI263263B publication Critical patent/TWI263263B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

This coating forming agent is used to be applied on a substrate having a photoresist pattern so as to reduce a gap between photoresist patterns by utilizing the thermal shrinkage effect of the formed coating and to form a fine pattern by substantially completely removing the formed coating. The agent contains (a) a water-soluble polymer and (b) a monomer of a heterocyclic compound having two or more nitrogen atoms in the same ring. The method for forming the fine pattern is carried out by using the agent.
TW94128435A 2004-08-20 2005-08-19 Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent TWI263263B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004240399A JP4535374B2 (en) 2004-08-20 2004-08-20 COATING FORMING AGENT FOR PATTERN REFINEMENT AND METHOD FOR FORMING FINE PATTERN USING THE

Publications (2)

Publication Number Publication Date
TW200614345A true TW200614345A (en) 2006-05-01
TWI263263B TWI263263B (en) 2006-10-01

Family

ID=35907518

Family Applications (1)

Application Number Title Priority Date Filing Date
TW94128435A TWI263263B (en) 2004-08-20 2005-08-19 Over-coating agent for forming fine patterns and a method of forming fine patterns using such agent

Country Status (3)

Country Link
JP (1) JP4535374B2 (en)
TW (1) TWI263263B (en)
WO (1) WO2006019135A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417682B (en) * 2006-10-19 2013-12-01 Az Electronic Mat Ip Japan Kk Method for producing a miniaturised pattern and treatment liquid for resist substrate using therewith

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007073684A (en) * 2005-09-06 2007-03-22 Toshiba Corp Pattern forming method
JP2007311508A (en) * 2006-05-17 2007-11-29 Nikon Corp Fine pattern forming method and device manufacturing method
US7923200B2 (en) 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (en) * 2007-05-01 2012-11-07 ＡｚエレクトロニックマテリアルズＩｐ株式会社 Water-soluble resin composition for forming fine pattern and fine pattern forming method using the same
JP5323698B2 (en) * 2007-07-11 2013-10-23 ＡｚエレクトロニックマテリアルズＩｐ株式会社 Composition for forming fine pattern and method for forming fine pattern using the same
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
KR101036753B1 (en) 2008-11-07 2011-05-24 주식회사 동부하이텍 Additive for chemically amplified photoresist composition and chemically amplified photoresist composition containing thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3825294B2 (en) * 2001-09-28 2006-09-27 東京応化工業株式会社 Resist pattern refinement method and resist pattern refinement coating forming liquid used in the method
JP3476081B2 (en) * 2001-12-27 2003-12-10 東京応化工業株式会社 Coating forming agent for pattern refinement and method for forming fine pattern using the same
JP3485182B1 (en) * 2002-06-28 2004-01-13 東京応化工業株式会社 Coating forming agent for pattern refinement and method for forming fine pattern using the same
JP3850781B2 (en) * 2002-09-30 2006-11-29 富士通株式会社 Resist pattern thickening material, resist pattern forming method, and semiconductor device manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI417682B (en) * 2006-10-19 2013-12-01 Az Electronic Mat Ip Japan Kk Method for producing a miniaturised pattern and treatment liquid for resist substrate using therewith

Also Published As

Publication number Publication date
WO2006019135A1 (en) 2006-02-23
JP2006058600A (en) 2006-03-02
TWI263263B (en) 2006-10-01
JP4535374B2 (en) 2010-09-01

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees