TW200611085A - A fine pattern forming material, method for forming micro-resist pattern, and electronic device - Google Patents

A fine pattern forming material, method for forming micro-resist pattern, and electronic device

Info

Publication number
TW200611085A
TW200611085A TW094128027A TW94128027A TW200611085A TW 200611085 A TW200611085 A TW 200611085A TW 094128027 A TW094128027 A TW 094128027A TW 94128027 A TW94128027 A TW 94128027A TW 200611085 A TW200611085 A TW 200611085A
Authority
TW
Taiwan
Prior art keywords
amine compound
forming material
water
pattern forming
coating layer
Prior art date
Application number
TW094128027A
Other languages
English (en)
Inventor
Takeo Ishibashi
Kiyohisa Takahashi
Yusuke Takano
Original Assignee
Renesas Tech Corp
Az Electronic Materials Japan
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Renesas Tech Corp, Az Electronic Materials Japan filed Critical Renesas Tech Corp
Publication of TW200611085A publication Critical patent/TW200611085A/zh

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/40Treatment after imagewise removal, e.g. baking
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/0271Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
    • H01L21/0273Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
    • H01L21/0274Photolithographic processes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3086Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H01L21/3083Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/3088Process specially adapted to improve the resolution of the mask
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment
    • H01L21/67109Apparatus for thermal treatment mainly by convection

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Materials For Photolithography (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW094128027A 2004-08-25 2005-08-17 A fine pattern forming material, method for forming micro-resist pattern, and electronic device TW200611085A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004245333A JP2006064851A (ja) 2004-08-25 2004-08-25 微細パターン形成材料、微細レジストパターン形成方法及び電子デバイス装置

Publications (1)

Publication Number Publication Date
TW200611085A true TW200611085A (en) 2006-04-01

Family

ID=35967458

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094128027A TW200611085A (en) 2004-08-25 2005-08-17 A fine pattern forming material, method for forming micro-resist pattern, and electronic device

Country Status (7)

Country Link
US (1) US20080044759A1 (zh)
EP (1) EP1791028A4 (zh)
JP (1) JP2006064851A (zh)
KR (1) KR20070054185A (zh)
CN (1) CN101006394A (zh)
TW (1) TW200611085A (zh)
WO (1) WO2006022246A1 (zh)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4583860B2 (ja) * 2004-10-04 2010-11-17 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、並びに、半導体装置及びその製造方法
JP4531726B2 (ja) * 2006-06-22 2010-08-25 Azエレクトロニックマテリアルズ株式会社 微細化されたレジストパターンの形成方法
WO2008114644A1 (ja) * 2007-03-16 2008-09-25 Jsr Corporation レジストパターン形成方法及びそれに用いるレジストパターン不溶化樹脂組成物
US7923200B2 (en) * 2007-04-09 2011-04-12 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern comprising a lactam
JP5069494B2 (ja) * 2007-05-01 2012-11-07 AzエレクトロニックマテリアルズIp株式会社 微細化パターン形成用水溶性樹脂組成物およびこれを用いた微細パターン形成方法
US8298744B2 (en) 2007-05-18 2012-10-30 Samsung Electronics Co., Ltd. Coating material for photoresist pattern and method of forming fine pattern using the same
EP2159641A1 (en) * 2007-06-15 2010-03-03 Fujifilm Corporation Surface treatment agent for forming pattern and pattern forming method using the treatment agent
JP2009042582A (ja) * 2007-08-10 2009-02-26 Tokyo Ohka Kogyo Co Ltd 微細パターン形成方法及び被覆膜形成用材料
JP2009105248A (ja) * 2007-10-24 2009-05-14 Toshiba Corp パターン形成方法
KR101004550B1 (ko) * 2007-10-31 2011-01-03 주식회사 하이닉스반도체 반도체 소자의 형성 방법
JP2009295745A (ja) * 2008-06-04 2009-12-17 Toshiba Corp 半導体装置の製造方法
US7745077B2 (en) 2008-06-18 2010-06-29 Az Electronic Materials Usa Corp. Composition for coating over a photoresist pattern
JP5522028B2 (ja) * 2010-03-09 2014-06-18 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
JP5515962B2 (ja) * 2010-03-30 2014-06-11 ソニー株式会社 化学増幅型レジストパターンの改質方法
JP5840446B2 (ja) * 2011-10-11 2016-01-06 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH レジストパターンの表面処理方法およびそれを用いたレジストパターン形成方法
KR101902402B1 (ko) 2012-04-05 2018-09-28 삼성전자 주식회사 반도체 장치의 미세 패턴 형성 방법 및 이를 이용한 반도체 장치의 제조 방법
CN102866574B (zh) * 2012-10-12 2014-08-13 上海华力微电子有限公司 相移光掩模制作方法
JP7241486B2 (ja) * 2018-08-21 2023-03-17 東京エレクトロン株式会社 マスクの形成方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6042988A (en) * 1996-12-26 2000-03-28 Tokyo Ohka Kogyo Co., Ltd. Chemical-amplification-type negative resist composition
JP3950584B2 (ja) * 1999-06-29 2007-08-01 Azエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物
JP4348499B2 (ja) * 2000-08-16 2009-10-21 信越化学工業株式会社 微細めっきパターン形成組成物
JP3825294B2 (ja) * 2001-09-28 2006-09-27 東京応化工業株式会社 レジストパターンの微細化方法及びその方法に用いるレジストパターン微細化用被覆形成液
US20030008968A1 (en) * 2001-07-05 2003-01-09 Yoshiki Sugeta Method for reducing pattern dimension in photoresist layer
JP3476080B2 (ja) * 2001-11-05 2003-12-10 東京応化工業株式会社 微細パターンの形成方法
US7189783B2 (en) * 2001-11-27 2007-03-13 Fujitsu Limited Resist pattern thickening material, resist pattern and forming process thereof, and semiconductor device and manufacturing process thereof
JP3850767B2 (ja) * 2002-07-25 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターン及びその製造方法、並びに、半導体装置及びその製造方法
JP3850772B2 (ja) * 2002-08-21 2006-11-29 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの製造方法、及び半導体装置の製造方法
CN1823304B (zh) * 2003-07-17 2010-12-22 Az电子材料(日本)株式会社 用于形成精细图形的材料和使用该材料形成精细图形的方法
JP4417191B2 (ja) * 2003-08-04 2010-02-17 富士通株式会社 レジストパターン厚肉化材料、レジストパターンの形成方法、及び半導体装置の製造方法
JP4485241B2 (ja) * 2004-04-09 2010-06-16 Azエレクトロニックマテリアルズ株式会社 水溶性樹脂組成物およびそれを用いたパターン形成方法

Also Published As

Publication number Publication date
WO2006022246A1 (ja) 2006-03-02
CN101006394A (zh) 2007-07-25
JP2006064851A (ja) 2006-03-09
EP1791028A1 (en) 2007-05-30
KR20070054185A (ko) 2007-05-28
US20080044759A1 (en) 2008-02-21
EP1791028A4 (en) 2009-12-30

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