TW200608478A - System and method of cleaning and etching a substrate - Google Patents

System and method of cleaning and etching a substrate

Info

Publication number
TW200608478A
TW200608478A TW094121622A TW94121622A TW200608478A TW 200608478 A TW200608478 A TW 200608478A TW 094121622 A TW094121622 A TW 094121622A TW 94121622 A TW94121622 A TW 94121622A TW 200608478 A TW200608478 A TW 200608478A
Authority
TW
Taiwan
Prior art keywords
substrate
etching
cleaning
solution
reacted
Prior art date
Application number
TW094121622A
Other languages
Chinese (zh)
Other versions
TWI271793B (en
Inventor
Mikhail Korolik
John M Boyd
Katrina Mikhaylich
Michael Ravkin
Fred C Redeker
Larios John M De
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200608478A publication Critical patent/TW200608478A/en
Application granted granted Critical
Publication of TWI271793B publication Critical patent/TWI271793B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31127—Etching organic layers
    • H01L21/31133—Etching organic layers by chemical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles

Abstract

One embodiment provides a method of processing a substrate. The method includes applying a solution to a surface of a substrate. At least one reacting species has been produced by dissociation of the solution by applying energy such as a light to the solution. A first material on the substrate is reacted and removing the reacted first material. A system for processing a substrate is also described.
TW094121622A 2004-06-28 2005-06-28 System and method of cleaning and etching a substrate TWI271793B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88000704A 2004-06-28 2004-06-28

Publications (2)

Publication Number Publication Date
TW200608478A true TW200608478A (en) 2006-03-01
TWI271793B TWI271793B (en) 2007-01-21

Family

ID=35786645

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094121622A TWI271793B (en) 2004-06-28 2005-06-28 System and method of cleaning and etching a substrate

Country Status (6)

Country Link
EP (1) EP1782461A4 (en)
JP (1) JP2008504714A (en)
KR (1) KR20070026687A (en)
CN (1) CN101006571A (en)
TW (1) TWI271793B (en)
WO (1) WO2006012174A2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426962B (en) * 2009-03-09 2014-02-21 Hitachi High Tech Corp A cleaning device for a mask member and a cleaning method, and an organic electroluminescent display

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130068264A1 (en) * 2011-09-21 2013-03-21 Nanya Technology Corporation Wafer scrubber apparatus
KR101992422B1 (en) * 2012-08-14 2019-06-24 주식회사 동진쎄미켐 Apparatus and method for polishing metal layer using photolysis advanced oxidation process
TWI667708B (en) * 2013-11-11 2019-08-01 東京威力科創股份有限公司 Method and hardware for enhanced removal of post etch polymer and hardmask removal
TWI570806B (en) * 2013-11-11 2017-02-11 東京威力科創股份有限公司 System and method for enhanced removal of metal hardmask using ultra violet treatment
US10867815B2 (en) 2018-09-04 2020-12-15 Tokyo Electron Limited Photonically tuned etchant reactivity for wet etching

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512123A (en) * 1992-05-19 1996-04-30 Maxwell Laboratories Method for using pulsed optical energy to increase the bondability of a surface
US5782986A (en) * 1996-01-11 1998-07-21 Fsi International Process for metals removal using beta-diketone or beta-ketoimine ligand forming compounds
US6631726B1 (en) * 1999-08-05 2003-10-14 Hitachi Electronics Engineering Co., Ltd. Apparatus and method for processing a substrate
JP2001118818A (en) * 1999-08-12 2001-04-27 Uct Kk Ultraviolet ray-treating device and method
JP3961240B2 (en) * 2001-06-28 2007-08-22 株式会社半導体エネルギー研究所 Method for manufacturing semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI426962B (en) * 2009-03-09 2014-02-21 Hitachi High Tech Corp A cleaning device for a mask member and a cleaning method, and an organic electroluminescent display

Also Published As

Publication number Publication date
KR20070026687A (en) 2007-03-08
EP1782461A4 (en) 2008-05-28
WO2006012174A3 (en) 2006-09-14
WO2006012174A2 (en) 2006-02-02
JP2008504714A (en) 2008-02-14
EP1782461A2 (en) 2007-05-09
TWI271793B (en) 2007-01-21
CN101006571A (en) 2007-07-25

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees