TW200607023A - A method to fabricate a thin film on a substrate - Google Patents

Abstract

The invention provides a method, which can separate a thin film from a primary substrate and transfer it onto a target substrate. The method is practiced first by a process of epitaxial growth, which grows a thin film over a primary substrate with different doping concentration or species from the primary substrate, performing ion implantation process, which implants ions into the primary substrate and the depth of implantation is greater than the thickness of thin film to form an ion-filled catalysis reaction layer between the thin epitaxial film and the implantation peak, and then followed by a wafer-bonding method, which joins the primary substrate with a target substrate. The resulting bonded structure is treated by a thermal treatment or a high-energy ion activation activity, in which the implanted ions between the thin film and the implantation peak incorporate into aerial particles by catalysis reaction with the dopant and then the aerial particles breaks the silicon solid structure below the epitaxial film, resulting in the thin film to be transferred onto the target substrate.