TW200606584A - Chemically amplified positive photoresist composition - Google Patents

Chemically amplified positive photoresist composition

Info

Publication number
TW200606584A
TW200606584A TW094111895A TW94111895A TW200606584A TW 200606584 A TW200606584 A TW 200606584A TW 094111895 A TW094111895 A TW 094111895A TW 94111895 A TW94111895 A TW 94111895A TW 200606584 A TW200606584 A TW 200606584A
Authority
TW
Taiwan
Prior art keywords
acid
positive photoresist
resin
photoresist composition
composition
Prior art date
Application number
TW094111895A
Other languages
Chinese (zh)
Other versions
TWI318332B (en
Inventor
Ken Miyagi
Toshiaki Tachi
Satoshi Niikura
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200606584A publication Critical patent/TW200606584A/en
Application granted granted Critical
Publication of TWI318332B publication Critical patent/TWI318332B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0395—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having a backbone with alicyclic moieties
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Phenolic Resins Or Amino Resins (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A positive photoresist composition with excellent heat resistance, which at the time of high temperature heat treatment does not suffer from distortion of resist pattern shape and exhibits a low amount of sublimation, is provided. The composition is a chemically amplified positive photoresist composition and includes a resin component (A), an acid generating component (C) which generates acid in response to exposure to radiation, and an organic solvent, the composition's alkali-dissolvability increasing due to the acid generated by the acid generating component, wherein the resin component (A) includes a resin component (a1) which has low alkali solubility or is insoluble in alkali and is obtained by protecting part of the total phenolic hydroxyl groups of a resin with acid dissociable dissolution inhibiting groups and by subjecting the resulting resin to fractional removal of low molecular weight components.
TW094111895A 2004-04-20 2005-04-14 Chemically amplified positive photoresist composition TWI318332B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004124223A JP4476680B2 (en) 2004-04-20 2004-04-20 Chemically amplified positive photoresist composition for implantation process

Publications (2)

Publication Number Publication Date
TW200606584A true TW200606584A (en) 2006-02-16
TWI318332B TWI318332B (en) 2009-12-11

Family

ID=35346370

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094111895A TWI318332B (en) 2004-04-20 2005-04-14 Chemically amplified positive photoresist composition

Country Status (4)

Country Link
JP (1) JP4476680B2 (en)
KR (1) KR100706010B1 (en)
CN (1) CN1690856A (en)
TW (1) TWI318332B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4893270B2 (en) * 2006-11-29 2012-03-07 住友化学株式会社 Chemically amplified positive resist composition
TWI431426B (en) * 2007-03-27 2014-03-21 Fujifilm Corp Positive photosensitive resin composition and cured film forming method using the same
EP2599814B1 (en) 2010-07-30 2018-02-14 Mitsubishi Gas Chemical Company, Inc. Compound, radiation-sensitive composition, and method for forming resist pattern
KR20120107653A (en) 2011-03-22 2012-10-04 삼성디스플레이 주식회사 Photoresist resin composition and method of forming patterns by using the same
JP5825884B2 (en) * 2011-07-01 2015-12-02 旭化成イーマテリアルズ株式会社 Phenol resin composition and method for producing cured relief pattern
JP6425078B2 (en) * 2014-12-17 2018-11-21 Dic株式会社 Denatured novolac type phenolic resin, method of producing modified novolac type phenolic resin, photosensitive composition, resist material, and resist coating film
JP6951833B2 (en) * 2015-08-24 2021-10-20 学校法人 関西大学 Polymer compounds, radiation-sensitive compositions and pattern-forming methods
US20170058079A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method
US20170059989A1 (en) 2015-08-24 2017-03-02 A School Corporation Kansai University Polymer compound, radiation sensitive composition and pattern forming method
JP7369146B2 (en) 2018-05-24 2023-10-25 メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツング Novolac/DNQ-based chemically amplified photoresist
US20200209749A1 (en) * 2018-12-27 2020-07-02 Sumitomo Chemical Company, Limited Resist composition and method for producing resist pattern
CN114456336B (en) * 2022-03-22 2023-12-01 重庆大学 Preparation method and application of ultraviolet degradable polymer material

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3755571B2 (en) 1999-11-12 2006-03-15 信越化学工業株式会社 Chemically amplified positive resist material and pattern forming method
JP4070393B2 (en) * 2000-01-17 2008-04-02 富士フイルム株式会社 Negative resist composition
KR100359220B1 (en) 2000-12-28 2002-11-04 제일모직주식회사 Photoresist composition
TWI262359B (en) * 2002-03-28 2006-09-21 Sumitomo Chemical Co Positive type chemical amplification resist composition
JP4053402B2 (en) * 2002-10-23 2008-02-27 東京応化工業株式会社 Positive photoresist composition for LCD production and method for forming resist pattern

Also Published As

Publication number Publication date
JP4476680B2 (en) 2010-06-09
KR100706010B1 (en) 2007-04-11
TWI318332B (en) 2009-12-11
CN1690856A (en) 2005-11-02
JP2005308977A (en) 2005-11-04
KR20060045809A (en) 2006-05-17

Similar Documents

Publication Publication Date Title
TW200606584A (en) Chemically amplified positive photoresist composition
TW200619850A (en) Resist composition and resist pattern forming method
TW200712777A (en) Positive photosensitive resin composition, uses thereof, and method for forming positive pattern
TW200641522A (en) Positive resist composition, method for forming resist pattern and compound
EP1729176A4 (en) Positively radiation-sensitive resin composition
TW200600529A (en) Polymer compound, photoresist composition including polymer compound, and method for forming resist pattern
EP3537217A3 (en) Positive resist composition, resin used for the positive resist composition, compound used for synthesis of the resin and pattern forming method using the positive resist composition
TW200741347A (en) Resist composition for use in immersion lithography and process for forming resist pattern
TW200506520A (en) Novel photosensitive resin compositions
EP1369456A4 (en) Thermosetting resin composition, and prepreg, laminate for circuit board, and printed circuit board each made therewith
TW200715058A (en) Positive resist composition and pattern-forming method using the same
TW200731016A (en) Composition for forming upper film and method for forming photoresist pattern
WO2009063808A1 (en) Positive-type photosensitive resin composition, method for production of resist pattern, semiconductor device, and electronic device
WO2009057638A1 (en) Positive photosensitive resin composition, method for forming pattern, electronic component
EP2329320A4 (en) Positive resist composition for immersion exposure and pattern forming method
EP1767991A3 (en) Positive resist composition and pattern forming method using the same
EP1628159A3 (en) Chemical amplification resist composition and pattern-forming method using the same
TW200727077A (en) Photoresist composition
JP5940827B2 (en) Curable composition for inkjet and method for producing electronic component
TW200742940A (en) Photoresist composition
TW200707108A (en) Positive resist composition and method for forming resist pattern
TW200742939A (en) Photoresist composition
EP1229390A4 (en) Positive type radiation-sensitive composition and process for producing pattern with the same
TW200617599A (en) Positive resist composition and method for forming resist pattern
TW200742941A (en) Photoresist composition