TW200602770A - Semi-transparent and semi-reflective electrode substrate, and production method thereof, and liquid crystal display apparatus using them - Google Patents

Semi-transparent and semi-reflective electrode substrate, and production method thereof, and liquid crystal display apparatus using them

Info

Publication number
TW200602770A
TW200602770A TW094105913A TW94105913A TW200602770A TW 200602770 A TW200602770 A TW 200602770A TW 094105913 A TW094105913 A TW 094105913A TW 94105913 A TW94105913 A TW 94105913A TW 200602770 A TW200602770 A TW 200602770A
Authority
TW
Taiwan
Prior art keywords
semi
reflective electrode
electrode substrate
transparent
substrate
Prior art date
Application number
TW094105913A
Other languages
English (en)
Inventor
Kazuyoshi Inoue
Masato Matsubara
Shigekazu Tomai
Original Assignee
Idemitsu Kosan Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2004061656A external-priority patent/JP2005250191A/ja
Priority claimed from JP2004062480A external-priority patent/JP2005250256A/ja
Application filed by Idemitsu Kosan Co filed Critical Idemitsu Kosan Co
Publication of TW200602770A publication Critical patent/TW200602770A/zh

Links

Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133553—Reflecting elements
    • G02F1/133555—Transflectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B5/00—Non-insulated conductors or conductive bodies characterised by their form
    • H01B5/14—Non-insulated conductors or conductive bodies characterised by their form comprising conductive layers or films on insulating-supports

Landscapes

  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Liquid Crystal (AREA)
TW094105913A 2004-03-05 2005-02-25 Semi-transparent and semi-reflective electrode substrate, and production method thereof, and liquid crystal display apparatus using them TW200602770A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004061656A JP2005250191A (ja) 2004-03-05 2004-03-05 半透過・半反射電極基板、及びその製造方法、及びその半透過・半反射電極基板を用いた液晶表示装置
JP2004062480A JP2005250256A (ja) 2004-03-05 2004-03-05 半透過・半反射電極基板、及びその製造方法、及びその半透過・半反射電極基板を用いた液晶表示装置

Publications (1)

Publication Number Publication Date
TW200602770A true TW200602770A (en) 2006-01-16

Family

ID=34921693

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094105913A TW200602770A (en) 2004-03-05 2005-02-25 Semi-transparent and semi-reflective electrode substrate, and production method thereof, and liquid crystal display apparatus using them

Country Status (5)

Country Link
US (1) US7612850B2 (zh)
EP (1) EP1722377A4 (zh)
KR (1) KR20070001169A (zh)
TW (1) TW200602770A (zh)
WO (1) WO2005086179A1 (zh)

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KR101197223B1 (ko) * 2005-09-09 2012-11-02 엘지디스플레이 주식회사 반사투과형 액정표시장치용 어레이 기판 및 그 제조방법
US7889298B2 (en) 2005-11-21 2011-02-15 Idemitsu Kosan Co. Ltd. Transparent conductive film, and substrate, electronic device and liquid crystal display using the same
WO2008018403A1 (fr) * 2006-08-10 2008-02-14 Idemitsu Kosan Co., Ltd. Cible d'oxyde contenant du lanthanide
JP5063968B2 (ja) * 2006-09-21 2012-10-31 出光興産株式会社 酸化エルビウム含有酸化物ターゲット
JP5306179B2 (ja) 2007-03-20 2013-10-02 出光興産株式会社 スパッタリングターゲット、酸化物半導体膜及び半導体デバイス
KR20090063946A (ko) * 2007-12-14 2009-06-18 삼성코닝정밀유리 주식회사 산화인듐주석 타겟 및 이를 이용한 투명 도전막의 제조방법
CN101911303B (zh) * 2007-12-25 2013-03-27 出光兴产株式会社 氧化物半导体场效应晶体管及其制造方法
EP2495224B1 (en) 2009-10-26 2014-12-24 JX Nippon Mining & Metals Corporation Indium oxide sintered body and indium oxide transparent conductive film
KR101311874B1 (ko) 2009-12-14 2013-09-26 엘지디스플레이 주식회사 반사투과형 액정표시장치용 어레이 기판의 제조 방법
TWI427784B (zh) * 2010-07-16 2014-02-21 Au Optronics Corp 畫素結構的製造方法及有機發光元件的製造方法
CN102629609A (zh) * 2011-07-22 2012-08-08 京东方科技集团股份有限公司 阵列基板及其制作方法、液晶面板、显示装置
TWI518917B (zh) * 2013-04-12 2016-01-21 元太科技工業股份有限公司 畫素結構
KR20170050729A (ko) * 2015-10-30 2017-05-11 엘지디스플레이 주식회사 유기 발광 표시 장치
CN109300981A (zh) * 2018-10-29 2019-02-01 佛山科学技术学院 一种薄膜晶体管
CN110400810B (zh) * 2019-08-01 2022-01-11 京东方科技集团股份有限公司 显示基板及其制作方法、和显示装置
WO2023175794A1 (ja) * 2022-03-16 2023-09-21 シャープディスプレイテクノロジー株式会社 表示装置及びその製造方法

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JP3724263B2 (ja) * 1998-09-11 2005-12-07 セイコーエプソン株式会社 液晶パネルの駆動装置及び液晶装置
US6727965B1 (en) * 1999-07-07 2004-04-27 Matsushita Electric Industrial Co., Ltd. Semitransparent liquid crystal display device
JP3665263B2 (ja) * 2000-01-18 2005-06-29 シャープ株式会社 液晶表示装置
JP2001305529A (ja) 2000-04-19 2001-10-31 Sharp Corp 液晶表示装置および半透過反射膜
JP2002049034A (ja) 2000-05-25 2002-02-15 Seiko Epson Corp 液晶装置、その製造方法および電子機器
JP3384398B2 (ja) * 2000-05-25 2003-03-10 セイコーエプソン株式会社 液晶装置、その製造方法および電子機器
JP2003029298A (ja) 2001-07-18 2003-01-29 Seiko Epson Corp 薄膜半導体装置、電気光学装置、電子機器、薄膜半導体装置並びに電気光学装置の製造方法
JP2003029257A (ja) 2001-07-19 2003-01-29 Sony Corp 反射型表示装置
KR100776756B1 (ko) * 2001-08-01 2007-11-19 삼성전자주식회사 반사-투과형 액정표시장치 및 이의 제조 방법
JP2003084300A (ja) 2001-09-12 2003-03-19 Matsushita Electric Ind Co Ltd 液晶表示装置とその製造方法
JP4154880B2 (ja) 2001-09-26 2008-09-24 セイコーエプソン株式会社 電気光学装置及びその製造方法
TWI226965B (en) * 2001-10-30 2005-01-21 Nec Lcd Technologies Ltd Semi-transmission type liquid crystal display and fabrication method thereof
JP3674579B2 (ja) * 2001-12-05 2005-07-20 セイコーエプソン株式会社 液晶表示装置及び電子機器
JPWO2003054621A1 (ja) 2001-12-11 2005-04-28 ソニー株式会社 液晶表示装置
JP3977099B2 (ja) * 2002-02-25 2007-09-19 株式会社アドバンスト・ディスプレイ 液晶表示装置及びその製造方法
US7115913B2 (en) 2002-03-27 2006-10-03 Tfpd Corporation Array substrate used for a display device and a method of making the same
JP3797317B2 (ja) 2002-05-30 2006-07-19 住友金属鉱山株式会社 透明導電性薄膜用ターゲット、透明導電性薄膜およびその製造方法、ディスプレイ用電極材料、有機エレクトロルミネッセンス素子
DE60329638D1 (de) * 2002-08-02 2009-11-19 Idemitsu Kosan Co Sputtertarget, Sinterkörper, unter deren Verwendung gebildeter leitfähiger Film, organische EL-Vorrichtung und für diesen verwendetes Substrat
KR100995020B1 (ko) * 2003-12-27 2010-11-19 엘지디스플레이 주식회사 액정표시장치 및 그 제조방법
US7304780B2 (en) * 2004-12-17 2007-12-04 Sipix Imaging, Inc. Backplane design for display panels and processes for their manufacture

Also Published As

Publication number Publication date
EP1722377A1 (en) 2006-11-15
KR20070001169A (ko) 2007-01-03
US20080239217A1 (en) 2008-10-02
WO2005086179A1 (ja) 2005-09-15
EP1722377A4 (en) 2008-10-01
US7612850B2 (en) 2009-11-03

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