TW200532044A - Method of manufacturing an optical fiber preform with a vertical, large-number, synchronizing deposition in inside vapor-phase oxidation process - Google Patents
Method of manufacturing an optical fiber preform with a vertical, large-number, synchronizing deposition in inside vapor-phase oxidation process Download PDFInfo
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200532044200532044
【發明所屬之技術領域】 本發明係有關於—種使用於通信之光纖預型體製造方法 的管内化學氣相沈積法之直立式大量同步上下垂直方向沈積 製造多支光纖預型體的方法。 ' 【先前技術】 通信用玻璃(石英)光纖的製造過程,一般包括先製成預 形體Preform rad(棒)及再抽兩技術。以目前己 成熟穩定的光纖製造技術而言,光纖在抽絲成細小直徑如常 用1 25微米或其它規格之前,都以放大比例作成一種直徑約2 公分至4或5公分稱為光纖預型體Pref〇rm的方式先行放大 製造。然後再放入高溫爐内抽成細絲。這是光纖製造的兩大 步驟。所以所有不同種類的光纖内部折射率分佈和傳播特性 所需的各項設計如材料選用、幾何結構安排、光學特 性、· ··等考慮都在預型體製成時大致己定。因此預型體製 造技術是光纖製造技術的核心及關鍵技術。也因此預型体體 製造技術的優劣、製成率、產出率、成本及規模化能力都關 係到此產業競爭力高低及產業前景甚至關係到此產業存在對 民生價值貢獻度及影響社會進步快慢的大小。亦是當前頻寬 是否能快速打開的關鍵。 近二十年來,己為大家所熟知的光纖預形体製造技術主 要分成兩大類的四種方法。兩大類分別為内沈積方法1 v p 0 Inside Vapor-Phase Oxidation process 和外沈積方法 0VP0 Outside Vapor-Phase Oxidation process0[Technical field to which the invention belongs] The present invention relates to a method for manufacturing a plurality of optical fiber preforms by vertical and simultaneous simultaneous vertical and large-scale deposition of an in-tube chemical vapor deposition method for manufacturing optical fiber preforms for communication. '' [Previous technology] The manufacturing process of communication glass (quartz) optical fiber generally includes two techniques: firstly forming a preform rad (rod) and then pumping. In terms of the mature and stable optical fiber manufacturing technology, before the optical fiber is drawn into a small diameter, such as commonly used 125 micrometers or other specifications, it is made into an optical fiber preform with an enlargement ratio of about 2 cm to 4 or 5 cm in diameter. The method of Pref〇rm is first enlarged and manufactured. Then put it into a high temperature furnace and draw it into filaments. These are the two major steps in fiber manufacturing. Therefore, considerations such as material selection, geometrical arrangement, optical characteristics, and other considerations required for the refractive index distribution and propagation characteristics of all different types of optical fibers are generally determined when the preform is made. Therefore, prefabricated manufacturing technology is the core and key technology of optical fiber manufacturing technology. Therefore, the pros and cons of prefabricated body manufacturing technology, the production rate, the output rate, the cost and the ability to scale are all related to the competitiveness of the industry and the prospects of the industry. Fast and slow size. It is also the key to whether the current bandwidth can be turned on quickly. In the past two decades, the well-known optical fiber preform manufacturing technology is mainly divided into four categories and four methods. The two major types are the internal deposition method 1 v p 0 Inside Vapor-Phase Oxidation process and the external deposition method 0VP0 Outside Vapor-Phase Oxidation process0
200532044 五、發明說明(2) 内沈積方法又有 MCVD(Modified Chemical Vapor Deposition即改良式化學氣相沈積法如圖一所示)及 PCVD(P1asma-activated Chemica1 Vapor Deposition 即電 聚激勵化學氣相沈積法如圖二所示)。 外沈積方法又有0VD(0utside Vapor Deposition即外沈積 法如圖三所示)及 VAD(Vapor-phased Axial Deposition 即 軸向化學氣相沈積法如圖四所示)等共四種預型體製造方 法。 此四種製造方法所使用的沈積法都是傳統半導體製造技 術 CVD 法(Chemical Vapor Deposition 化學氣相沈積法) 的應用,這四種製造方法除了以沈積在管内或管(棒)外的差 別外;尚有化學反應加熱能源裝置為直接加熱(0VD及VAD)、 間接加熱(MCVD及PCVD的物理化學能的電漿產生裝置);還 有依沈積水平來回方向的MCVD、PCVD及0VD或VAD的軸向(非 垂直來回方向)等的差別。 光纖預型體製造常用的化學反應式如下:200532044 V. Description of the invention (2) Internal deposition methods include MCVD (Modified Chemical Vapor Deposition, as shown in Figure 1) and PCVD (P1asma-activated Chemica1 Vapor Deposition, which is electropolymerized chemical vapor deposition) Method shown in Figure 2). There are four types of preforms: 0VD (0utside Vapor Deposition, as shown in Figure 3) and VAD (Vapor-phased Axial Deposition, as shown in Figure 4). method. The deposition methods used in these four manufacturing methods are all the application of the traditional semiconductor manufacturing technology CVD method (Chemical Vapor Deposition). The four manufacturing methods differ from the deposition in the tube or outside the tube (rod). ; There are still chemical reaction heating energy devices for direct heating (0VD and VAD), indirect heating (physical and chemical energy of MCVD and PCVD plasma generating device); and MCVD, PCVD and 0VD or VAD based on the deposition level back and forth Axial (non-vertical back and forth) and other differences. The chemical reaction formula commonly used in the manufacture of optical fiber preforms is as follows:
SiCl4 + 〇2 - SiO2 + 2 Cl2SiCl4 + 〇2-SiO2 + 2 Cl2
GeCl4 + 〇2 — Ge02 + 2 Cl2 4 P0C 1 3 + 3 02 — 2 P2〇5 + 6 Cl2 4 BC 1 3 + 3 02 — 2 B2〇3 + 6 ci2 儘管各種製法之差異,其目的都在完成光纖結構如圖五 所示的結果。光纖結構分為核心c〇re3〇及纖殼Cladding31兩 部分。石夕光纖預型體管内沈積法製造主要是在純石英管s i 〇2GeCl4 + 〇2 — Ge02 + 2 Cl2 4 P0C 1 3 + 3 02 — 2 P2〇5 + 6 Cl2 4 BC 1 3 + 3 02 — 2 B2〇3 + 6 ci2 Despite the differences in various manufacturing methods, its purpose is being completed The fiber structure is shown in Figure 5. The optical fiber structure is divided into two parts: core30 and fibershell Cladding31. Shixi fiber preform body tube deposition method is mainly manufactured in pure quartz tube s i 〇2
200532044 五、發明說明(3) 内部以通進來的氣相化學材料如以上所列者及其化學反應, 大量產生以S i 〇2 為主要光透明材料的沈積,來使光纖預 型體核心Core及纖殼Cladding等部分逐漸增厚。並同時以一 疋的比例調整其折射率,如為了增加折射率需要的摻雜材料 如Ge〇2 鍺、及POCI3 磷。(加磷主要為降低MCVD管内沈積 透明化溫度的材料。)另外加B2〇3硼及F氟主要為降低折射率 的摻雜材料(硼巳不再使用,多數製造法皆改用氟)。這些材 料依不同的光纖結構如單模態或多模態結構的設計來製造。 如管内沈積法則由管内的外層往内層一層層逐步沈積。直到 核心最内層亦即最高折射率的中心層為止·,如管外沈積法則 由内層核心往外製造。熟知的光纖預型體製造方法如附件參 考資料,本發明僅針對本發明使用有關連的内沈積法先前技 術作說明。並從I VP0内沈積法兩種方法擇一,以折射率分佛 控制較精確的傳統PCVD法沈積過程介紹如下: PCVD法於七 0年代由 Phi lips Forschungslab。rat。rium200532044 V. Description of the invention (3) The gas phase chemical materials introduced in the inside and the chemical reactions listed above generate a large number of depositions with Si 〇2 as the main optically transparent material to make the optical fiber preform core Core And fiber casing Cladding and other parts gradually thickened. At the same time, its refractive index is adjusted by a ratio of ytterbium, such as doping materials such as GeO2 germanium, and POCI3 phosphorus needed to increase the refractive index. (Phosphorus is mainly used to reduce the deposition transparency in MCVD tubes.) In addition, B2O3 boron and F fluorine are mainly doped materials that reduce the refractive index (boron and hafnium are no longer used, and most manufacturing methods use fluorine). These materials are manufactured according to the design of different fiber structures such as single-mode or multi-mode structures. For example, the deposition rule in the tube is gradually deposited from the outer layer to the inner layer. Until the innermost layer of the core, that is, the center layer with the highest refractive index, such as the outer tube deposition method, it is manufactured from the inner core to the outside. The well-known manufacturing methods of optical fiber preforms are as described in the appendix, and the present invention is only described for the present invention using the prior art of the related internal deposition method. And choose one of the two methods of I VP0 internal deposition method. The traditional PCVD method with more accurate refractive index control is introduced as follows: The PCVD method was developed by Phi lips Forschungslab in the 1970s. rat. rium
Aachen發明。此法亦為廣為熟知半導体cvD製程發明後許 久’光纖製造才拿來改變使用之另一種應用。其同樣是^氣 相的SiCU,GeCU及〇2反應成為^化及Ge〇2方式並沈積在石英 管内壁的方法。 、 PC VD法的製程如圖二所示。製程很重要的是氣体供應系 統25、石英管内壁的電漿反應區23及後真空幫泵系統21。、 首先取一支石英管1架設在玻璃車床上。架設方法如圖 六之一台***方式,石英管從車床尾端進入,穿過可同步轉Aachen invented. This method is also widely known as another application of optical fiber manufacturing long after the invention of the semiconductor cvD process was invented. It is also a method of SiCU in the gas phase, and GeCU and O2 are reacted to form the Al2O3 and Ge02 methods and deposited on the inner wall of the quartz tube. The process of PC VD method is shown in Figure 2. The process is very important is the gas supply system 25, the plasma reaction zone 23 on the inner wall of the quartz tube, and the rear vacuum pump system 21. First, take a quartz tube and set it up on a glass lathe. The erection method is shown in Figure 6. One of the inserting methods, the quartz tube enters from the end of the lathe, and can be rotated synchronously through it.
200532044 五、發明說明(4)200532044 V. Description of Invention (4)
動的夾頭,再穿過諧振腔,最後再以兩端的旋轉接頭及兩端 的紅轉夹頭固定架好。氣體供應系統25是以極精確的流量控 制器控制SiCl4、GeCl4、CJ6及氧氣送出至管路,其攜帶的混 合氣体通過旋轉接頭進入石英管。石英管架在玻璃車床夾頭 兩端並周期性轉角或轉動。反應區23(即電漿產生區)在譜振 腔12内被包園住的石英管中發生。石英管由純Si〇2製成,不 但當製造光纖核心Core及纖殼Cladding過程的支撐,也兼具 光導纖殼Cladding的作用。石英管由外部的保溫爐24包住並 保持一定的高溫,以利沈積穩定進行及防止預形体未完成前 的應力破壞。The moving chuck passes through the cavity, and then the two ends of the rotary joint and the red turn chuck are used to fix the frame. The gas supply system 25 controls the delivery of SiCl4, GeCl4, CJ6, and oxygen to the pipeline with an extremely accurate flow controller. The mixed gas carried by the gas supply system 25 enters the quartz tube through a rotary joint. Quartz tube holders are on both ends of the glass lathe chuck and periodically corner or turn. The reaction zone 23 (i.e., the plasma generating zone) occurs in a quartz tube enclosed in the spectrum vibration chamber 12. The quartz tube is made of pure SiO2, which not only supports the core of the optical fiber and the cladding process of the fiber shell, but also has the function of cladding the optical fiber shell. The quartz tube is enveloped by an external holding furnace 24 and maintained at a certain high temperature to facilitate stable deposition and prevent stress damage before the preform is completed.
混合氣流被送入諧振腔形成的電漿(等離子体)反應區 並在此形成反應物分子粒子而沈積於石英管内壁。反應區的 壓力維持在1到2kPa( 1 0到20mbar ),真空壓力由出氣端的真 空常泵21產生及控制。圓柱狀的諧振腔沿著石英管左右來回 移動,發生在内的電聚區也隨諧振腔快速左右來回移動。因 此許許多多沿著長長石英管壁内的薄層沈積就均勻地形成。 每層的厚度及成分比例,都可以變化諧振腔移動的速度及氣 体流量來調整變化。光導所需不同折射率組成的摻雜比及折 射率分佈Reflection index profile於焉完成◊這是光纖預 形体沈積製造技術最重要的核心技術。亦即折射率分佈對半 徑變化的精確度控制、摻雜比對折射率高低的控制及石英管 内沈積速率的控制技術。 促成IV P 0管内沈積法化學反應的熱源有兩種。p c v ])法是 以微波產生的電磁場穿過石英管,直接作用在管内通過的氣The mixed gas flow is sent to the plasma (plasma) reaction zone formed by the resonant cavity, where reactant molecular particles are formed and deposited on the inner wall of the quartz tube. The pressure in the reaction zone is maintained at 1 to 2 kPa (10 to 20 mbar), and the vacuum pressure is generated and controlled by a vacuum pump 21 at the gas outlet. The cylindrical resonant cavity moves back and forth along the quartz tube, and the electro-polymerization area that occurs inside also moves rapidly with the resonant cavity. As a result, many thin layers are deposited uniformly along the walls of the long quartz tube. The thickness and composition ratio of each layer can be adjusted by changing the speed and gas flow of the cavity. The doping ratio and refractive index profile of the different refractive index components required for the light guide are completed in 焉. This is the most important core technology for optical fiber preform deposition manufacturing technology. That is, the precision control of the refractive index profile on the radius change, the doping ratio control of the refractive index level, and the control technology of the deposition rate in the quartz tube. There are two types of heat sources that contribute to the chemical reaction of the IV P 0 deposition method. The method p c v]) is to use a microwave-generated electromagnetic field to pass through a quartz tube and directly act on the gas passing through the tube.
第8頁 200532044 五、發明說明(5) 相反應物上。在管内接近絕對真空的低壓條件下,反應物被 電離成攜帶巨大能量的等離子電衆。這些等離子体具有極高 活性,能快速產生物理化學反應而形成S i 〇2或摻雜的Ge02等 高溫氧化物。這些高溫氧化物就近在較低溫的石英管内壁直 接以透明的玻璃態沈積下來。PC VD法使用的是物理化學能; 常用的MCVD法是以氫氧焰燃燒或以RF射頻產生的高溫爐加溫 石英管並用透過石英管傳導的高溫去促使管内氣体反應成 Si02&Ge02粒子,然後Si02及Ge02粒子沈積在附近較相對低溫 的石英管内壁上。 當石英管完成沈積後,稱為管形預型體,為本發明之需 要,管形預型體稱為預型管Preform-tube。PC VD法此時將預 型管取出並拿至另一部機器以高溫熔縮Col Ipse成實心的預 形体,稱為棒形預型體,又稱為預型棒Preform rod。預型 棒即各種光纖預型體製造完成後通稱的預型體Preform。熔 縮Col Ipse成實心的預形體的過程是利用約攝氏2000到220 0 度高溫加熱,使沈積完成後尚未實心的預形体因表面張力作 用縮至實心。將預型管取出並拿至另一部機器以高溫熔縮 Col Ipse成實心的預形体的製程’這是PCVD和MCVD不同製程 之一。MCVD法是當石英管完成沈積後直接在同一部玻璃車床 上利用其本身加熱的氫氧焰升溫至攝氏2000度以上完成熔縮 的製程。PC VD法因預型管沈積製程是以氣相反應物受電場作 用使自身氣體崩潰’產生高能離子化低溫電聚的非平衡態物 理化學反應完成其管内數千層内層的低溫沈積。所以不必如 MCVD法加裝對石英管加熱至攝氏I?00度以上如氫氧焰或射頻Page 8 200532044 V. Description of the invention (5) On the contrary. Under the low pressure conditions near the absolute vacuum inside the tube, the reactants are ionized into a plasma electric mass carrying huge energy. These plasmas have extremely high activity and can rapidly produce physicochemical reactions to form high temperature oxides such as Si02 or doped Ge02. These high-temperature oxides are deposited in the transparent glass state directly on the inner wall of the lower temperature quartz tube. The PC VD method uses physical and chemical energy; the commonly used MCVD method uses a hydrogen-oxygen flame or a high-temperature furnace generated by RF radio frequency to heat the quartz tube and uses the high temperature transmitted through the quartz tube to promote the reaction of the gas in the tube to Si02 & Ge02 particles. Then Si02 and Ge02 particles are deposited on the inner wall of the quartz tube at a relatively low temperature nearby. After the quartz tube is deposited, it is called a tubular preform, which is a requirement of the present invention. The tubular preform is called a preform tube. In the PC VD method, the preform tube is taken out and taken to another machine to melt Col Ipse into a solid preform at high temperature, which is called a rod preform and also called a preform rod. Preform rod is the preform commonly called after the manufacture of various optical fiber preforms. The process of melting Col Ipse into a solid preform is by heating at a high temperature of about 2000 to 2200 degrees Celsius, so that the preform that is not solid after the deposition is completed is reduced to solid due to surface tension. The process of taking the preform tube and taking it to another machine to melt Col Ipse into a solid preform at high temperature 'is one of the different processes of PCVD and MCVD. The MCVD method is a process in which the quartz tube is directly heated on the same glass lathe by using its own heated oxygen and hydrogen flame to raise the temperature to above 2000 degrees Celsius to complete the melting process. The PC VD method uses the non-equilibrium physicochemical reaction of high-energy ionization and low-temperature electropolymerization to complete the low-temperature deposition of the preformed tube deposition process by the gas phase reactant being subjected to an electric field to cause its own gas to collapse. Therefore, it is not necessary to add a quartz tube to the temperature of I? 00 degrees Celsius or higher, such as an oxygen flame or radio frequency, as in the MCVD method.
200532044 五、發明說明(6) ' —·一一 加熱等裝置’以間接獲取高溫來促成管内化學反應的外加能 源。故PCVD法預形管沈積製程和熔縮製程是分開在不同的設 備上進行的。也因此PCVD法基本上製造一支預形体須利用: 部不同功能的破璃車床來完成。 為區別本發明使用的内沈積法和外沈積法的優劣點,現 以此兩大類分類來比較。内沈積方法的MCVD> pcvD法具有折 射率分佈控制較精確容易、反應區較純淨不必再脫水過程及 的優點;但在沈積速率較低為其缺點(其沈積量截至目前為 止也很難超過5iBg/min,比VAD法的10至50mg/min大差一 截)。外沈積方法的0VD法及VAD法具有較内沈積法十倍高的 沈積速率;但其折射率分佈控制較難精確變化及製程還須再 脫水的缺點。折射率分佈控制精確度決定頻寬的高低,所以 MCVD及PCVD法在其製成品佔先天頻寬優勢下,如果内沈積法 只要能提高沈積速率即能提高產能,此將勝過外沈積法高產 能卻先天上折射率分佈控制較差的劣勢。 不幸的是沈積速率是與反應物能附著的有效面積成正 比◊内沈積法先天上即受管内有限沈積面積限制,而且沈積 面又愈來愈小。因此當沈積層數愈多,管内可沈積面愈變愈 小時,愈無法增加沈積速率。因此相較於外沈積法,0VD及 VAD法一開始即可以較粗較大接觸附著的沈積面提高預型體 的沈積速率。而且在0VD沈積層數愈變愈多時,其沈積面愈 來愈大,沈積速率即愈來愈高。VAD法則以大接觸附著的沈 積面開始,始終保持高沈積速率。200532044 V. Description of the invention (6) '— · 11 Devices such as heating ’are used to indirectly obtain high temperature to promote the external energy source of the chemical reaction in the tube. Therefore, the PCVD preform tube deposition process and the melting process are performed separately on different equipment. Therefore, the PCVD method basically uses a glass-breaking lathe with different functions to make a preform. In order to distinguish the advantages and disadvantages of the internal deposition method and the external deposition method used in the present invention, the two categories are compared for comparison. The MCVD of the internal deposition method> pcvD method has the advantages of more accurate and easier control of the refractive index profile, and a cleaner reaction zone, so there is no need to dewater the process. However, the lower deposition rate is its disadvantage (its deposition amount is difficult to exceed 5iBg so far / min, a big difference from 10 to 50 mg / min of the VAD method). The 0VD method and the VAD method of the external deposition method have a deposition rate ten times higher than that of the internal deposition method; however, the refractive index distribution control is difficult to accurately change and the process must be dehydrated. The accuracy of the refractive index distribution control determines the level of bandwidth. Therefore, MCVD and PCVD methods have the advantage of innate bandwidth of their finished products. If the internal deposition method can increase the production rate as long as it can increase the deposition rate, it will outperform the external deposition method. Production capacity has the disadvantage of poorly controlled refractive index distribution. Unfortunately, the deposition rate is proportional to the effective area to which the reactants can attach. The internal deposition method is inherently limited by the limited deposition area in the tube, and the deposition surface is getting smaller and smaller. Therefore, as the number of deposited layers increases, the smaller the deposition surface in the tube becomes, the more the deposition rate cannot be increased. Therefore, compared with the external deposition method, the 0VD and VAD methods can increase the deposition rate of the preform from the thicker and larger contacting deposition surface at the beginning. And as the number of 0VD deposition layers becomes more and more, the deposition surface becomes larger and larger, and the deposition rate becomes higher and higher. The VAD law starts with deposition surfaces with large contact attachments and consistently maintains a high deposition rate.
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I 200532044 五、發明說明(7) 因此石英管内沈積法在傳統玻璃車床上的單管水平方命 沈積技術’想要提高沈積速率是緣木求魚。内沈積法如又想 以開始時即以大管的大管内大接觸面附著來提高沈積速率: 在PCVD法將產生因管徑加大使電漿穩定度降低的缺點。在 MCVD法其石英管導熱容量的加大使支撐石英管因溫度提高及 外加氫氧焰流量增加壓力沖擊變形的缺點。因此内沈積法先 天缺點無法改變情況下,如何在保有其折射率分佈控制的優 勢中’又要能擁有產量提馬並降低生產成本的方法,是當今 光纖製造技術首要突破的瓶頸。 目前針對本發明關係的内沈積法先前技術的缺點說明如 下: 1、 圓管水平架$又水平沈積的缺點 如果在無重力的太空, 這並不疋缺點,但水平架設在地面上時,將使設備為支撐石 英管本身及兩端同步轉動的夾頭重量,付出昂貴的費用。再 者其設備體積和複雜度無法降低。水平架設就必得水平方向 沈積。但水平沈積造成圓對稱管在微重力作用下之上下沈積 均勻度的問題及反應區遠端未沈積漂移粒子上下非均句散佈 等所造成的許多問題等對製造出的光纖品質產生不利的影 響。為克服此問題,傳統内沈積法必須轉動石英管來獲=均 勻度的提高。轉動中進行沈積又產生第2項缺點。 二 2、 石英管轉動沈積的缺點除了第1項為支撐石英管本身及 兩端同步轉動的夾頭缺點外;轉動沈積的石英管兩端為連 兩端固定不轉的進氣管及出氣管,必須各接一個旋轉接頭 Rotary Jointer,以保持管内外的氣密c這不但常為轉動中I 200532044 V. Description of the invention (7) Therefore, the single-tube horizontal square-deposition deposition technique of the quartz tube deposition method on a traditional glass lathe is used to increase the deposition rate. The internal deposition method also wants to increase the deposition rate by attaching the large contact surface in the large tube at the beginning: The PCVD method will have the disadvantage of reducing the plasma stability due to the increase in tube diameter. In the MCVD method, the increase of the thermal conductivity of the quartz tube makes the supporting quartz tube deformed by the pressure shock due to the increase in temperature and the increase in the flow of hydrogen and oxygen flames. Therefore, under the circumstance that the inherent disadvantages of the internal deposition method cannot be changed, how to maintain the advantages of its refractive index distribution control 'and have the ability to increase the output and reduce the production cost is the bottleneck of the first breakthrough of the current optical fiber manufacturing technology. The shortcomings of the prior art of the current internal deposition method for the relationship of the present invention are described as follows: 1. The shortcomings of the round tube horizontal frame and horizontal deposition are not a disadvantage if the space is gravity-free, but when it is placed on the ground, it will cause The equipment pays expensive expenses to support the weight of the quartz tube itself and the chucks that rotate at both ends simultaneously. Moreover, the size and complexity of its equipment cannot be reduced. Horizontal erection will require horizontal deposition. However, the horizontal deposition caused the uniformity of the up and down deposition of the circular symmetrical tube under the action of microgravity, and many problems caused by the non-uniform sentence dispersion of the drift particles that were not deposited at the far end of the reaction zone, which adversely affected the quality of the manufactured optical fiber . To overcome this problem, the traditional internal deposition method must rotate the quartz tube to obtain an improvement in uniformity. The second disadvantage is caused by the deposition during rotation. 2. In addition to the disadvantages of the quartz tube rotating deposition, the first item is the disadvantages of the chuck that supports the quartz tube itself and the two ends to rotate synchronously; the ends of the rotating deposited quartz tube are the inlet pipe and the outlet pipe that are not fixed at both ends. , Must be connected to a rotary joint Rotary Jointer, in order to keep the airtight inside and outside the tube c This is not only often in the rotation
200532044 五、發明說明(8) ---- 的磨擦耗損,造成耗材支出;更嚴重的是往往一支石英管的 ,=間沈積,提高了水氣進入反應區產生139〇nm波長區的嚴 f傳輸損失。MCVD法的高速轉動,常在沈積長度增加、石英 官潛存應力未消除、石英管兩端同時夾住時兩夾頭的準直度 和長久作業中溫度控制的起落穩定度等問題下產生彎曲。而 PCVD法的石英管連續轉動或以小角度週期規律式旋轉,也為 了保持近絕對真空(1〇到2〇mbar)付出昂貴的旋轉接頭費用。 3、在沈積速率較低為其缺點内沈積法其沈積量截至目前為 止也很難超過5mg/inin,比VAD法的10至50iBg/min小許多倍。 外沈積方法的〇VD法及VAD法具有較内沈積法十倍高的沈積速 率’但其折射率分佈控制較難精確變化及製程還須再脫水的 缺點。MCVD及PCVD法也因沈積速率較低,所以在石英管内每 層形成較低厚度。造成折射率分佈每層階寬變化較少,因此 所形成的折射率分佈較平滑。這是内沈積法在折射率分佈控 制的優勢。折射率分佈控制精確度決定頻寬的高低,所以 MCVI;及PCVD法在其製成品佔先天頻寬優勢下,如果内沈積法 只要能提高沈積速率即能提高產能,此將勝過外沈積法高產 能卻先天上折射率分佈控制較差的唯一方法不幸的是沈積 速率是與反應物能附著的有效面積成正比。内沈積法先天上 即受管内有限沈積面積限制,而且沈積面又愈來愈小。因此 當沈積層數愈多,管内可沈積面愈變愈小時,愈無法增加沈 積速率。因此相較於外沈積法,OVD及VAD法一開始即可以較 粗較大接觸附著的沈積面提高預型體的沈積速率。而且在 〇 V D沈積層數愈變愈多時,其沈積面愈來愈大,沈積速率即200532044 V. Description of the invention (8) ---- friction and wear caused by consumables; more serious is often a quartz tube, = indirect deposition, which improves the strictness of the 1330nm wavelength region when water gas enters the reaction zone. f Transmission loss. The high-speed rotation of the MCVD method often causes bending under the problems of increased sedimentation length, unresolved latent quartz stress, the collimation of the two chucks when the two ends of the quartz tube are simultaneously clamped, and the temperature-controlled landing stability during long-term operation . The continuous rotation of the quartz tube of the PCVD method or the regular rotation at a small angle period also pays expensive rotary joints to maintain a near absolute vacuum (10 to 20 mbar). 3. The low sedimentation rate is a disadvantage of the internal deposition method. As of now, it is difficult to exceed 5 mg / inin, which is many times smaller than the 10 to 50 iBg / min of the VAD method. The OVD method and VAD method of the external deposition method have a deposition rate ten times higher than that of the internal deposition method, but the refractive index distribution control is difficult to accurately change and the process needs to be dehydrated. MCVD and PCVD methods also have lower deposition rates, so each layer in the quartz tube has a lower thickness. As a result, the step width of each layer of the refractive index distribution changes less, so the resulting refractive index distribution is smoother. This is the advantage of the internal deposition method in the control of the refractive index profile. The accuracy of the refractive index distribution control determines the level of the bandwidth, so MCVI; and PCVD methods have the advantage of innate bandwidth of their finished products. If the internal deposition method can increase the productivity as long as it can increase the deposition rate, it will outperform the external deposition method. The only way to achieve high productivity with poorly controlled refractive index distribution is unfortunately the deposition rate is directly proportional to the effective area to which the reactants can attach. The internal deposition method is inherently limited by the limited deposition area in the tube, and the deposition surface is getting smaller and smaller. Therefore, as the number of deposited layers increases, the smaller the depositable surface in the tube becomes, the more the deposition rate cannot be increased. Therefore, compared with the external deposition method, the OVD and VAD methods can increase the deposition rate of the preform from the thicker and larger contact deposition surface at the beginning. And as the number of 0 V D deposition layers increases, the deposition area becomes larger and larger, and the deposition rate is
第12頁 200532044 五、發明說明(9) 愈來愈高◊因此石英管内沈積法在傳統玻璃車床上的單管水 平方向沈積技術’想要提高沈積速率是緣木求魚。内沈積法 如又想以開始時即以大管的大管内大接觸面附著來提高沈積 速率··在PCVD法將產生因管徑加大使電漿穩定度降低的缺 點。在MCVD法其石英管導熱容量的加大使支撐石英管因溫度 提高及外加氫氧焰流量增加壓力沖擊變形的缺點。因此内沈 積法先天缺點無法改變情況下’如何在保有其折射率分佈控 制的優勢中,又要能擁有產量提高並降低生產成本的方法, 是當今光纖製造技術首要突破的瓶頸。 從七Ο年代至今, 其為了提高製成預型體的數量去和高沈積速率的外沈積法競 爭,如上所述,唯一方法是將一機一管式的倍增沈積設備數 量如圖六。但傳統内沈積法採用稍加改善成MCVD及PCVD法用 的昂貴玻璃車床做預型體沈積及熔縮Col lapse的設備,這提 南了每早位產品(每支預形管)對設備成本的付出。這不但無 助於提高沈積速率先天低帶來的競爭優勢;反而帶來設備大 量投入的浪費,甚至減緩了光纖早應做到的高頻寬時代來臨 的機會^ 以目前最需要的1 300到1 600nm波長DFSM Dispersion-Flattened Single-Mode 或DCM+NZDSF即窄頻色 散補償Dispersion-Compensated Modules和非零色散偏移 的寬頻 DCF(C-BAND and L - Band 1 520nm 到 1 620ηιπ)各種做 為高密集波長通信DWDM用單模光纖的普及化需求下,或高頻 寬斜射率Graded - Index多模光纖的大量被採用的可能性增加 下。處處都顯示用折射率分佈精確控制及其結構變化多樣化Page 12 200532044 V. Description of the invention (9) It is getting higher and higher. Therefore, the single-tube horizontal-direction deposition technique of the traditional quartz tube deposition method on a traditional glass lathe is used to increase the deposition rate. Internal deposition method If you want to increase the deposition rate by attaching the large contact surface in the large tube of the large tube at the beginning ... The PCVD method will have the disadvantage of reducing the plasma stability due to the increase in tube diameter. In the MCVD method, the increase in the thermal conductivity of the quartz tube causes the disadvantages of the support quartz tube due to the increase in temperature and the increase in the flow rate of the added oxygen and oxygen flame. Therefore, under the circumstances that the inherent disadvantages of the internal deposition method cannot be changed, how to maintain the advantages of its refractive index distribution control and have the ability to increase production and reduce production costs is the bottleneck of the first breakthrough in today's optical fiber manufacturing technology. From the 1970s to the present, in order to increase the number of preforms to compete with the high deposition rate of the external deposition method, as mentioned above, the only method is to multiply the number of deposition equipment by one machine and one tube as shown in Figure 6. However, the traditional internal deposition method uses expensive glass lathes that are slightly improved to MCVD and PCVD methods for preform deposition and melting Col lapse equipment, which raises the cost of equipment for each early product (each preform tube). Pay. This not only does not help to improve the competitive advantage brought by the inherently low deposition rate; it also leads to a waste of large investment in equipment, and even slows down the opportunity of the high-frequency broadband era that optical fiber should have achieved ^ With the current most needed 1 300 to 1 600 nm Wavelength DFSM Dispersion-Flattened Single-Mode or DCM + NZDSF, narrow-band dispersion-compensated Dispersion-Compensated Modules and non-zero dispersion shifted broadband DCF (C-BAND and L-Band 1 520nm to 1 620ηιπ) With the popularization of single-mode optical fibers for DWDM, the possibility of large-scale adoption of high-frequency wide-band sloped-index multimode optical fibers increases. Everywhere shows the precise control of the refractive index profile and the diversity of its structural changes
第13頁 200532044 五、發明說明(ίο) 是 能力最高的PCVD法及MCVD法,所大規模製造出來的光 唯一實現物美價廉的光纖到家之途徑。 【發明内容】 自CVD沈積法應用到光纖預型體沈積製造方法以來,主 要發明出四種沈積法。即MCVD、PCVD、0VD及VAD法。這些七 Ο年代的發明雖己專利過期;但如今在一部預型體沈積設備 上,使用以上任何一種方法,卻尚未有折射率分佈最佳控制 及高沈積速率雙雙擁有的技術出現。 本發明就是一種在一部預型體沈積設備上,實現折射率 分佈最佳控制及最高產能的方法。此種結合折射率分佈最佳 控制及最高產能的方法,稱為『直立大量同步沈積法』 VLSD。 VLSD( Vertical Large-number SynchronizePage 13 200532044 V. Description of Invention (ίο) is the highest-capacity PCVD method and MCVD method. The light produced on a large scale is the only way to achieve high-quality and low-cost fiber to the home. [Summary] Since the CVD deposition method is applied to the optical fiber preform deposition manufacturing method, four deposition methods have been mainly invented. That is, MCVD, PCVD, 0VD and VAD methods. Although these 1970s inventions have expired patents, but nowadays, in a preform deposition equipment, using any of the above methods, there are no technologies that have the best control of refractive index distribution and high deposition rate. The invention is a method for realizing the best control of the refractive index distribution and the highest productivity on a preform deposition equipment. This method that combines the best control of the refractive index profile and the highest productivity is called the "Vertical Mass Synchronous Deposition Method" VLSD. VLSD (Vertical Large-number Synchronize
Deposition)。VLSD將如同半導体VLSI在同一晶圓片上同步 製程的方法一樣’ VLSD法亦具有在同一部設備同步完成大數 量光纖預形管的能力。VLSD法能以最經濟而高產能方法達到 高品質光纖製造的目的。 VLSD法主要是組合以下三種方法同時達到本發明的目 的: 一、 垂直取代水平創新石英管垂直的直立架設及反應熱源 垂直方向沿石英管移動沈積的方法,取代石英管水平架設及 化學反應熱源水平方向沈積移動的製造方法。 二、 固定取代旋轉 創新石英管固定不動的方法,取代石英 官隨沈積次數連續轉動或角度轉動的方法。Deposition). VLSD will be the same as the method for semiconductor VLSI to synchronize processes on the same wafer. The VLSD method also has the ability to simultaneously complete a large number of optical fiber preforms in the same equipment. The VLSD method can achieve the purpose of high-quality fiber manufacturing with the most economical and high-throughput method. The VLSD method mainly combines the following three methods to achieve the purpose of the present invention at the same time: 1. Vertical replacement of the horizontal innovative quartz tube vertical upright erection and reaction heat source vertical deposition along the quartz tube method, instead of the quartz tube horizontal erection and chemical reaction heat source level Manufacturing method of directional deposition movement. Second, fixed instead of rotating Innovative method of quartz tube fixed, instead of continuous rotation or angular rotation of the quartz official with the number of depositions.
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200532044200532044
200532044 五、發明說明(12) 法二之改變促使在一部設備上多管同時沈積成為可能^創新 法三多管並列於一台設備上,同時製造多支預型管的方式及 裝置,可將於其各管獨立製造時之許多相同機構予以共用及 簡化可節省更多投入資金、簡化設備複雜度及減少設備體 積。因此減少成本並增高產能。例如以共用同步驅動裝置、 集中共用供料系統、共用同步諧振腔控制系統…等共用取代 多管多台設備分開製造的裝置。 回顧電子化時代的發展,莫不以積艘化的電路進入大晶 圓上的同步多晶片同時量化製造’成本倍數降低和產品一致 性所帶來的低廉,使更多人有能力購買才促成電子產品如3C 之電腦、電信及電子消費性產品廣受使用,成為人人受益的 科技貢獻而倍受讚美!因此臺灣有機會成為PC電腦王國和各 種量產王國等美譽。今日本發明具有使最優秀最精確折射率 分佈控制技術、最優秀折射率分佈結構多樣化及最潔淨的内 沈積製造技術的保有下,同時又能簡化設備裝置及體積、降 低設備成本及空間下,提高產量並達成經濟量產規模的功 能。那臺灣成為光纖製造王國,必將指日可待! 【實施例内容】 以下結合圖七進一步說明本發明VLSD法用在一台機器沈 積十支光纖預型管的實施例子。本實施例以VLSD —pl〇機器來 做說明。VLSD-P1 0包括有氣體供應系統25,在此以舉其中第200532044 V. Description of the invention (12) The change of method two makes it possible to deposit multiple tubes on the same device at the same time. ^ Innovative method of three multiple tubes juxtaposed on one device and the method and device for manufacturing multiple pre-shaped tubes at the same time. Sharing and simplifying many of the same institutions when each tube was manufactured independently can save more investment capital, simplify equipment complexity, and reduce equipment volume. This reduces costs and increases productivity. For example, a shared synchronous driving device, a centralized shared feeding system, a shared synchronous resonant cavity control system, etc. are used instead of multiple tubes and multiple devices to be manufactured separately. Looking back at the development of the electronic age, it is necessary to use the integrated circuit to enter the synchronous multi-chips on the large wafers and quantify the manufacturing at the same time. The reduction in cost multiples and the low cost brought by product consistency have enabled more people to purchase electronics. Products such as 3C's computer, telecommunications and consumer electronics products are widely used, and are highly praised as a scientific and technological contribution for everyone. Therefore, Taiwan has the opportunity to become a PC kingdom and various production kingdoms. Today, the present invention has the possession of the best and most accurate refractive index distribution control technology, the most excellent refractive index distribution structure diversification, and the cleanest in-situ deposition manufacturing technology. At the same time, it can simplify equipment and volume, reduce equipment cost and space. The function of increasing production and achieving economic mass production scale. Taiwan will soon become a kingdom of optical fiber manufacturing! [Contents of the Example] The following is a further description of an example of using the VLSD method of the present invention to deposit ten optical fiber preform tubes in one machine with reference to FIG. In this embodiment, a VLSD_pl0 machine is used for description. VLSD-P1 0 includes a gas supply system 25.
第16頁 200532044 五、發明說明(13) 一支石英管1的氣體供應管路為例,其他各支石英管的氣體 供應方法相同。電腦控制系統2 6指揮氣体體供應系統2 5内的 SiCh、GeCl4及Η/β各共用定溫供料槽。在此以2〇之定 溫供料槽為例’ S i C 1 4定溫氣化分別流到流量控制器1 g。流 量控制器1 6接受電腦控制系統定量控制輸出後,與來自 GeCh、〇2、CJe或必要摻雜定量控制輸出的氣體在混合器19 内混合並各自從接頭進入十支石英管内。為簡化實例說明, 設備的框架和保溫箱沒有列出。當所有石英管平放進入可打 開再鎖緊的兩端夾頭13及諧振腔12後,蓋上各管的保溫爐 蓋。十個並列連動的諧振腔即由電腦設定點同步地上下等長 度和同速度開始進行沉積。各石英管内部壓力由固定接頭14 下方的壓力感測及控制器1 5迴授控制◊其廢氣及未沈積粒子 經過過濾器至尾端的廢氣處理器22共同處理。負壓條件由共 同真空幫泵21提供。 PC VD的製程由各放入石英管的諧振腔同時導入微波在其 各管内激發電漿(plasma)以對其内部通過化學氣相材料產生 管内反應物沈積。各諧振腔丨2並沿著與地面垂直向並列架設 的各石英管,同步同速上下移動,各石英管内由諧振腔產生 電聚區走過所造成的沈積物,同時得以一層層累積至完成所 需厚度的光纖預型管為止。此時的十支光纖預形管沈積的製 程即告完成。完成的十支光纖預形管,可再以其上高溫的裝 置進行炫縮成為實心的預形體再取出。或者直接取出移至外 部的水平式玻璃車床熔縮成為實心的預形體。 以上是一部VLSD-Pl〇設備以十支石英管製造十支預形體Page 16 200532044 V. Description of the invention (13) The gas supply line of one quartz tube 1 is taken as an example. The gas supply method of other quartz tubes is the same. The computer control system 26 directs SiCh, GeCl4, and Η / β in the gas supply system 25 to each share a constant-temperature feed tank. Here, taking a constant-temperature feed tank of 20 as an example, 'S i C 1 4 constant-temperature gasification flows to the flow controller 1 g, respectively. After the flow controller 16 receives the quantitative control output from the computer control system, it is mixed with the gas from GeCh, 02, CJe or the necessary dosing quantitative control output in the mixer 19 and each enters the ten quartz tubes from the joint. To simplify the illustration, the frame and incubator of the equipment are not listed. After all the quartz tubes are laid flat into the chucks 13 and the resonant cavity 12 that can be opened and locked again, cover the insulation furnace lids of the tubes. Ten parallel resonant cavities begin to deposit from the computer set point simultaneously with the same length up and down and at the same speed. The internal pressure of each quartz tube is controlled by the pressure sensing under the fixed joint 14 and the controller 15 feedback. Its exhaust gas and undeposited particles pass through the filter to the exhaust gas processor 22 at the tail end for joint processing. The negative pressure condition is provided by a common vacuum pump 21. In the process of PC VD, microwaves are introduced into the resonant cavity of the quartz tube at the same time, and the plasma is excited in each of the tubes to generate the deposition of reactants in the tube through the chemical vapor phase material inside. Each resonant cavity 2 and the quartz tubes erected side by side perpendicular to the ground move synchronously up and down at the same speed, and the sediments caused by the passage of the electro-polymerization region in the resonant cavity in each quartz tube are accumulated one by one to completion Fiber preforms of desired thickness. At this time, the process of depositing ten optical fiber preform tubes is completed. The completed ten optical fiber preformed tubes can be shrunk with a high-temperature device to form a solid preform and then taken out. Or take out the horizontal glass lathe that is moved to the outside and melt it into a solid preform. The above is a VLSD-Pl0 device, which uses ten quartz tubes to make ten preforms.
200532044 五、發明說明(14) 的倍數量產方法。此外可選取更高數量的同步沈積設備(如 十五至二十支型)來達到小設備高產能的目的。由於光纖預 形体製造,在沈積一支預形管的時間是熔縮製造成實心預形 體時間的三倍以上。所以熔縮設備的玻璃車床數量只要少數 幾部即足夠熔縮大數量產製出來的預形管。200532044 V. Description of the invention (14) Double production method. In addition, a higher number of simultaneous deposition equipment (such as fifteen to twenty) can be selected to achieve the purpose of high productivity of small equipment. Due to the manufacture of optical fiber preforms, the time required to deposit a preform tube is more than three times the time required to melt and produce a solid preform. Therefore, as long as the number of glass lathes of the melting equipment is small, it is enough to melt the preforms produced in large quantities.
第18頁 200532044 圖式簡單說明 【圖示部份】: 圖一、MCVD(Modified Chemical Vapor Deposition )改 良式化學氣相沈積法 圖二、PCVD(P1asma-activated Chemical Vapor Deposition)電漿激勵化學氣相沈積法 圖三、0VD(0utside Vapor Deposition)外化學氣相沈積法 圖四、VAD(Vapor-phased Axial Deposition)軸向化學氣相 沈積法 圖五、光纖結構 圖六、PC VD法石英管水平沈積傳統玻璃車床多臺機器架設方 式 圖七、PCVD法直立十管同步沈積製造光纖預型管實例 (11)微波產生器 (1 3 )可對稱打開夾頭 (1 5 )壓力感測及控制器 (1 7 )同步驅動馬達 (1 9 )混合器 (21)真空幫泵 (23)電漿產生區 (2 5 )氣體供應系統 (27)旋轉接頭 【主要部分代表符號說明】: (1)到(10)石英管^ (1 2 )諧振腔 (14)石英管兩端進出氣接頭 (1 6 )流量控制器 (18)可定位滾珠螺桿 (20)SiC14定溫供料槽 (22)廢氣處理n (2 4 )保溫爐 (2 6 )電腦控制系、统Page 18 200532044 Brief description of the diagram [Illustrated part]: Figure 1. MCVD (Modified Chemical Vapor Deposition) Modified Chemical Vapor Deposition Method Figure 2. PCVD (P1asma-activated Chemical Vapor Deposition) Plasma Excited Chemical Vapor Phase Deposition method Figure 3. 0VD (0utside Vapor Deposition) outside chemical vapor deposition method Figure 4. VAD (Vapor-phased Axial Deposition) axial chemical vapor deposition method Figure 5. Optical fiber structure Figure 6. PC VD method quartz tube horizontal deposition Traditional glass lathe with multiple machines erected Figure 7: PCVD method of simultaneous ten-tube simultaneous deposition to manufacture optical fiber preform tube (11) Microwave generator (1 3) Symmetrically open the chuck (1 5) Pressure sensor and controller ( 1 7) Synchronous drive motor (1 9) Mixer (21) Vacuum pump (23) Plasma generation area (2 5) Gas supply system (27) Rotary joint [Description of representative symbols of main parts]: (1) to ( 10) Quartz tube ^ (1 2) Resonant cavity (14) Inlet and outlet gas connectors at both ends of the quartz tube (1 6) Flow controller (18) Positionable ball screw (20) SiC14 Constant temperature feed tank (22) Exhaust gas treatment n (2 4) holding furnace (2 6) computer control system, system
200532044 圖式簡單說明. (28)氫氧焰 (3 0 )纖核 (29)測溫器 (3 1 )纖殼200532044 Schematic description. (28) Hydrogen flame (3 0) Fiber core (29) Thermometer (3 1) Fiber case
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