200532029 五、發明說明a) ' —、—————_________________________________________________________________ ' S … . 【發明所屬之技術領域J 本發明係有關一種古 之處理方法及其組成，=二；ζ塗佈式半導體阻抗發熱材料 導金屬類介質表面塗係ί2二種以，於經清洗處理之高傳 絕緣表層上再塗佈—声古4 ^溫及咼電壓之絕緣層，於該 成-半導體發熱層並；料而形 金屬類介質之表面;；藉由電流產生對該高傳導 抗發熱材料之方法。 "接加熱之塗佈式半導體阻 【先前技術】 按t知之電熱膜技術如 「碳素電熱膜製芒方沬 ^bll〇9285號 雨粉末和巧，其係主要將石墨粉之半導_導 “刀末和减鉛、氧化矽、氣：¥體¥ 氧化物之無機成膜劑及水溶性有機溶：：：：”多種 電塗料，將調製妥當的半導體導電塗“，以：、;、:成-導 ，，直接將導電塗料予以噴塗到經清洗烘乾产m刷f 質表面’再經高溫的烘烤烘乾，1經、：文最的介 熱膜原料於介質的丰面槿&拔蛀 ，皿、兀…處理，使電 發熱者。貝的表面構成私接之微觀通電網路，供均句 缺點習知之電熱膜技術雖具有發熱之效果，但其具如下之 1、 ： i°之電熱膜技術，其係為—厚度甚薄之電埶膜，κι 此’，、熱源產生僅成面狀傳導，&其加熱效率不：。、口 2、 習知之電熱膜技術僅可使用於非導電m (非金屬性傳200532029 V. Description of the invention a) '—, —————__________________________________________________________________' S…. [Technical field to which the invention belongs J The present invention relates to an ancient processing method and its composition, = two; ζ coating semiconductor resistance heating The material is coated with two kinds of metal-based dielectrics, which are then coated on the cleaned high-transmittance insulation surface layer—the acoustic insulation layer with a temperature of 4 温 and a high voltage, and the semiconductor heating layer is combined; The surface of a metal-like dielectric; a method of generating the high-conductivity anti-heating material by a current. " Coated semiconductor resistors with heating [previous technology] According to the known electric film technology such as "carbon electric heating film made of mang fang ^ bll〇9285 rain powder He Qiao, which is mainly the semiconducting graphite powder _ Guide "Knife and lead reduction, silicon oxide, gas: ¥ body ¥ oxides of inorganic film-forming agents and water-soluble organic solvents ::::" a variety of electrical coatings, will be properly prepared semiconductor conductive coating ", with:,; ：: cheng-conductor, directly spray the conductive paint on the surface of the m brush f after cleaning and drying, and then bake and dry at high temperature. 1 ：: the most thermal film material on the rich side of the medium Hibiscus & pull out, dish, slab, etc., make the electricity heat. The surface of the shell constitutes a private micro-connection network. Although the conventional heating film technology has the effect of generating heat, it has the following features: 1. The heating film technology of i °, which is a very thin one. The electric film, κι ', the heat source generates only planar conduction, & its heating efficiency is not :. , Mouth 2, the conventional electrothermal film technology can only be used for non-conductive m (non-metallic
第5頁 200532029 I五、發明說明（2) 導）且耐高 佳（非金屬 3 、習知之 質如陶瓷及 於熱傳導效 【内容】 <所欲解決 本發明 有待改善之 效果，乃潛 設計產銷之 果，終研究 料之處理方 <解決問題 為了達到 瓷粉依所需 傳導金屬表 絕緣層，於 金屬粉、粉 成分相互調 加溫風乾後 溫風乾作為 貝之表面產 料之方法。 溫之介質如陶莞及玻j离 性傳導）、溫度提升緩 電熱膜技術僅可使用於 玻璃，因此，其使用範 率高之高傳導金屬類介 之技術問題> 人有鐘於上述習知之電 缺失，盼能提供一突破 心研思、設計組製，综 專業技術知識與實務經 出本發明一種高效率塗 法及其組成，以提供使 之技術手段> 前述之目的，本發明係 比例調合均勻，再將其 面，經加溫風乾後而形 該絕緣表層上再塗佈一 狀水玻璃、奈米瓷粉、 合而成之半導體阻抗發 形成一半導體發熱層， 保護，進而藉由電流產 生高效率直接加熱之塗 ，因此，使加熱效率不 慢且耗電。 非導電類且耐高溫之介 圍受到限制且無法使$ 質之表面。 熱膜技術之實用困難及 性之設計，以增進實用 集其多年從事相關產品 驗及研思設計所得之成 佈式半導體阻抗發熱材 用者。 以耐高溫樹脂與奈米陶 塗佈於經清洗處理之高 成一耐高溫及高電壓之 層以耐高溫樹脂、半導 向&金屬粉及金屬碳粉 熱材料並印製金屬線， 表面再加覆一絕緣層加 生對該高傳導金屬類介 佈式半導體阻抗發熱材 200532029 五、發明說明（3) 〈對先前技術之功效> 本發明方法具有如下之優點： 1 ·其半導體發熱層係具有一厚度， 一立體型態產生熱源，進而具電熱轉 而使熱源之產生係為 化效率高且加熱速度 2 4 6 加 加 可 可 因 傳導金 流傳至 7 ·不 【實施 本 法及其 比例調 介質表 層，於 粉、粉 相互調 風乾後 乾作為 表面產 熱時不燃 熱表面溫 任意隨物 散發達紅 經過塗怖 屬類介質 高傳導金 需南溫燒 方式】 發明之高 組成，其 合均勻， 面，經加 该絕緣表 狀水破璃 合而成之 形成一半 保護，進 生高效率 度均勻。 體表面加工。 外線之能量。 ,、巴緣層，而可使用於低熔點之 ^ 12熱效率佳及有效阻絕加埶 屬類介質’進而達到節省能源之 ’故不使加熱介質產生物理變化。 效率塗 主要係 再將其 溫風乾 層上再 、奈米 半導體 導體發 而藉由 直接加 佈式半導體阻 以耐高溫樹脂 塗佈於經清洗 後而形成一耐 塗佈一層以耐 瓷粉、高導金 阻抗發熱材料 熱層，表面再 電流產生對該 熱之塗佈式半 抗發熱材料 與奈米陶瓷 處理之高傳 高溫及高電 高溫樹脂、 屬粉及金屬 並印製金屬 加覆一絕緣 高傳導金屬 導體阻抗發 之處理方 粉依所需 導金屬類 壓之絕綠 半導金屬 碳粉成分 線，加溫 層加溫風 類介質之 熱材料之Page 5 200532029 I. Introduction to the Invention (2) Introduction) and high resistance (non-metallic 3, known quality such as ceramics and heat conduction effect [Content] < The effect to be improved by the present invention to be improved is a potential design The fruit of production and marketing, the processing method of the final research material < Solve the problem In order to achieve the ceramic powder according to the required conductive metal surface insulation layer, the metal powder and powder components are heated and air-dried after warming and air-drying as the surface material of shellfish. Temperature medium such as Tao Wan and glass (isotropic conduction), temperature-increasing slow-heating film technology can only be used for glass, therefore, its use of high-conductivity high-conductivity metal-based media technology problems> Knowing the lack of electricity, I hope to provide a breakthrough thinking, design system, comprehensive professional technical knowledge and practice through the invention of a high-efficiency coating method and its composition, to provide technical means to make it > The proportions are uniformly blended, and then the surface is heated and air-dried to form a layer of water glass, nano-ceramic powder, and a semiconducting resistor formed on the insulating surface layer. Heat generating layer, is protected, in turn generates a current by direct heating of the coated high efficiency, and therefore, the heating power is slow and inefficient. The non-conductive and high temperature resistant range is limited and cannot make a quality surface. The practical and difficult design of thermal film technology is designed to enhance the practicality. It is a user of cloth-type semiconductor impedance heating materials that has been engaged in the design and research of related products for many years. Coated with high temperature resistant resin and nano-ceramics on a high-temperature-resistant and high-voltage layer after cleaning treatment. High-temperature resistant resin, semi-directional & metal powder and metal toner thermal material and printed metal wires. Covering with an insulating layer and adding the high-conductivity metal-type interstitial semiconductor resistance heating material 200532029 V. Description of the invention (3) <Effect on the prior art> The method of the present invention has the following advantages: 1. Its semiconductor heating layer system It has a thickness and a three-dimensional shape, which generates a heat source, which in turn has electric heating. The heat source is converted to a high efficiency and a heating rate of 2 4 6 plus cacao due to the flow of conductive gold to 7. · Do not implement this method and its proportional adjustment. The surface of the medium, powder and powder are air-dried and dried after each other. The surface does not burn when the heat is generated. The surface temperature arbitrarily spreads with the material. The red color passes through the coating medium. The high-conductivity gold requires the south temperature firing method. The surface is protected by half of the surface formed by adding the insulating surface water to the glass, and the uniformity is high and the efficiency is high. Body surface processing. Outside energy. , And the marginal layer, which can be used for low melting point ^ 12 good thermal efficiency and effective resistance to the addition of the medium of the class ‘and to achieve energy saving’ so no physical change in the heating medium. The efficiency coating is mainly applied to the warm air-drying layer and the nano-semiconductor conductor. The high-temperature-resistant resin is applied by direct application of a cloth-type semiconductor resistor after washing to form a coating-resistant layer that is resistant to porcelain powder. Gold conductive resistance heating material thermal layer, the surface re-current generates the heat-coated semi-heat-resistant material and nano-ceramic high-temperature and high-electricity high-temperature and high-electricity high-temperature resin, powder and metal and printed metal with insulation High-conductivity metal conductors are used to process the square powder, which is a green and semi-conductive metal carbon powder composition line that is required to conduct metal pressure. The heating layer is used to heat the thermal material of the wind-like medium.
第7頁 200532029 五、發明說明（4) 方法。 請參閱第一圖及第三圖所示，本發明係以熱傳導效率 較快之高傳導金屬類介質（A )進行塗裝，但前述之半導 體阻抗發熱材料（1 0 )於塗佈於具導電性及低熔點之高 傳導金屬類介質（A)如銘或銘合金類介質之表面前，為 避免電源之傳導及過溫使其融熔之問題，本發明之方法於 塗佈或印刷該半導體阻抗發熱材料（1 0 )前，則需針對 該高傳導金屬類介質（A )表面進行絕緣層（9 )處理， 該絕緣層（9 )亦採塗佈或印刷之方式附著於高傳導金屬 類介質（A )之表面，但於塗佈或印刷前，其第一步驟則 應先進行清洗高傳導金屬類介質（A )之表面，使高傳導 金屬類介質（A )表面不得殘留油污及懸浮微粒（1 )之 表面處理，第二步驟係在高傳導金屬類介質（A )表面使 用上膠機或印刷處理，將含瓷粉之耐高溫漆均勻附著於高 傳導金屬類介質（A )之表面（2 )，第三步驟使用約攝 氏四百度之高溫連續烘烤三十分鐘，冷卻後成為一個絕緣 層（9 )表面（3 )，第四步驟利用上膠機或印刷處理， 將半導體阻抗發熱材料（1 0 )印製於絕緣層（9 )表面 上（4 )，第五步驟使用約攝氏三百五十度之高溫連續烘 烤三十分鐘，冷卻後使半導體阻抗發熱材料（1 0 )均勻 附著於前述絕緣層（9 )表面上（5 )，第六步驟在該半 導體阻抗發熱材料（1 0 )層上印製金屬線（1 0 1 )使 用約攝氏三百五十度之高溫連續烘烤三十分鐘，冷卻後使 金屬線（1 0 1 )附著於半導體阻抗發熱材料（1 0 )表 200532029 五、發明說明（5) 面上（6 )，第七少驟利用上膠機或印刷處理，將含瓷粉 之耐高溫漆均勻附著於半泽阻抗發熱材料（1 〇 )之表 面，只餘下金屬線（1 0玉己之導通點（7)，第八步驟 使用約攝氏三百五十度之尚，連續烘烤三十分鐘，冷卻後 使含瓷粉之耐高溫漆均勻附^於半導體阻抗發熱材料（1 0)之表面（8)，進而於隶外層形成一絕緣層（9)， 前述第一步驟進行清洗高傳導金屬類介質（A )之表面， 使高傳導金屬類介質（A )表面不得殘留油污及懸浮微粒 (1 )之表面處理，其製作氧化膜絕緣層程序係包括：先 進行脫脂處理（1 1 )、再進行化學表面研磨處理（1 2 )、水洗（]_ 3 )、中和處理（1 4 )、低溫電解陽極氧 化處理（1 5 )、第二次水洗（1 6 )、封口處理（1 7 )、熱水浸泡（1 8 )及火、氣（1 9 )程序（如第二圖戶 示），如使用上膠機或印刷處理，將含耐高溫樹脂舆奈才 陶瓷粉之絕緣層（9 )附著於咼傳導金屬類介質（a )之 表面時，需先用喷沙處理或其他能除去表面殘留油污及懸 浮微粒的方式處理，且，前述之低溫電解陽極氧化處理〜 f i將於高傳導金屬類介質（A )表面形成一氧化 朽h /、亦具有絕緣及耐高溫之功效，因此，該低、、W帝鲧陪 極氧化處理Γ 5 y _ 々低/皿私解％ 棄該程序，若高傳導八=序係可依貫際需要選擇處理或捨 化處理（丄5 )而2類介質（A)經低溫電解陽極氧 時，則可形成一氧化膜之絕緣層（9) 高溫及高電ai:二專T;屬類介質（A)表面塗佈該耐 巴、，彖層（9 )，而可直接塗佈半導體阻抗Page 7 200532029 V. Description of the Invention (4) Method. Please refer to the first diagram and the third diagram. The present invention is coated with a high-conductivity metal-based medium (A) having a fast thermal conductivity, but the aforementioned semiconductor resistance heating material (1 0) is coated on a conductive substrate. And low melting point high-conducting metal-based medium (A) before the surface of the medium such as Ming or Ming alloy, in order to avoid the problem of conduction and over-temperature melting of the power supply, the method of the present invention is used to coat or print the semiconductor Before the resistance heating material (10), the surface of the highly conductive metal medium (A) needs to be treated with an insulating layer (9), and the insulating layer (9) is also attached to the highly conductive metal by coating or printing. The surface of the medium (A), but before coating or printing, the first step should be cleaning the surface of the highly conductive metal medium (A), so that the surface of the highly conductive metal medium (A) must not remain oily and suspended. The surface treatment of the particles (1), the second step is to use a gluing machine or printing treatment on the surface of the highly conductive metal medium (A) to uniformly adhere the high temperature resistant paint containing porcelain powder to the highly conductive metal medium (A). Surface (2), the third step Baking for 30 minutes at a high temperature of about four hundred degrees Celsius, after cooling, it becomes an insulating layer (9) surface (3). The fourth step is to use a gluing machine or printing process to print the semiconductor resistance heating material (1 0). On the surface (4) of the insulating layer (9), the fifth step uses a high temperature of about 350 degrees Celsius for 30 minutes of continuous baking, and after cooling, the semiconductor impedance heating material (1 0) is uniformly adhered to the aforementioned insulating layer ( 9) On the surface (5), the sixth step is to print a metal wire (1 0 1) on the semiconductor resistance heating material (1 0) layer, and use a high temperature of about 350 degrees Celsius for 30 minutes for continuous baking and cooling After that, the metal wire (1 0 1) is attached to the semiconductor resistance heating material (1 0). Table 200532029 V. Description of the invention (5) On the surface (6), the seventh step is to use a gluing machine or a printing process to include porcelain powder The high-temperature-resistant paint is evenly attached to the surface of the Hanazawa resistance heating material (10), and only the metal wire (10 Yuji's conduction point (7) is left. The eighth step uses about 350 degrees Celsius, continuous Bake for 30 minutes, after cooling, make the ceramic powder containing high temperature resistant The varnish is uniformly attached to the surface (8) of the semiconductor resistance heating material (10), and an insulating layer (9) is formed on the outer layer. The aforementioned first step is to clean the surface of the highly conductive metal-based medium (A), so that The surface of the conductive metal medium (A) must be free of oil stains and surface particles of suspended particles (1). The process of making the oxide film insulation layer includes: degreasing (1 1), and then chemical surface grinding (1 2). , Water washing (] _ 3), neutralization treatment (1 4), low temperature electrolytic anodizing treatment (1 5), second water washing (16), sealing treatment (1 7), hot water immersion (1 8), and Fire and gas (1 9) procedures (as shown in the second picture), such as using a gluing machine or printing process, attach the insulating layer (9) containing high-temperature resin ceramic ceramic powder to the 咼 conductive metal medium ( a) The surface should be treated with sandblasting or other methods that can remove residual oil and suspended particles on the surface, and the aforementioned low-temperature electrolytic anodizing treatment ~ fi will form a surface on the surface of the highly conductive metal medium (A). Oxidation decay h /, also has the function of insulation and high temperature resistance Effect, therefore, the low, and W dipole companion oxidation treatments Γ 5 y _ 々 low / lower solution% Abandon the procedure, if the high conductivity eight = sequence system can choose to deal with or rounding treatment (际5) When Type 2 dielectric (A) is subjected to low-temperature electrolytic anodic oxygen, an insulating layer of an oxide film can be formed (9) High temperature and high electricity ai: two special T; the surface of the generic medium (A) is coated with Naiba , 彖 layer (9), and can directly coat the semiconductor impedance
第9頁 200532029 五、發明說明（6) 發熱材料（1 〇 因此，就前 為兩個簡略之處 1 、將高傳導 處理（1 5 )， 之氧化膜，再依 )，印金屬線（ 竟粉之耐高溫漆 金屬線（1 〇 1 2、將高傳導 或其他能除去表 屬類介質（A ) 耐向溫漆均勻附 依序於其上塗佈 (1〇1)及利 均勻附著於前述 )之導通點（7 釗述本發明係 〇)之組成，其 半導金屬粉丄5 义、咼導金屬粉 需之阻抗調配的 ~電熱阻抗層， 0 )塗佈於高傳Page 9 200532029 V. Description of the invention (6) Heating material (10) Therefore, there are two simple points in the first place: 1. High-conductivity treatment (1 5), the oxide film, and then according to), printed metal wire (actually Powdered high-temperature resistant paint metal wire (101) 2. Apply high-conductivity or other media that can remove the surface category (A). Apply heat-resistant paint uniformly on it (1〇1) and adhere to it evenly. The composition of the conduction point (7) of the present invention (7), the semiconducting metal powder 丄 5, and the resistance adjustment required by the conductive metal powder ~ thermistor resistance layer, 0) is coated on the high pass
)者（如第四圖一 述之處理程序之〜不）。 理程序（如窜兄明，本發明可大致歸類 4^如弟四_ : 金屬類介質（A ^ ’、 使其夺面古 ）進行低溫電解陽極氧化 序於1 μ ▲ β 成一具絕緣及耐高溫效果 、八t佈搶 1 〇 f ¥體阻抗發熱材料（1 0 均勻附菩於二、、上膠機或印刷處理，將含 )之導通點7熱材料之表面，只餘下 金屬類介質（A )。 面殘留油污及縣、—之表面，先以喷沙處理 表面使用上=處理後’在高傳導金 半導體阻介質之表面（2)，再 用上膠機或印^料（1 〇)，印金屬線 發熱材dr理’將含竟粉之高溫漆 )。 表面，只餘下金屬線（：L 〇工 :高效率塗佈式半導體阻抗發熱 主要係以重量百分比之高溫樹脂3 〇火、 %、粉狀水玻璃1 5 %、奈米瓷粉丄0、 、半導體金屬氧化物及金屬碳粉，（t 比例），共佔總比3 7%，加溫風乾 以塗佈之方式將半導體阻抗發熱材 ^為 導金屬類介質（A )之表面，谁 1 ( 1 進而猎由電 200532029 五、發明說明（7) ^ 、〜 - 流產生對該高傳導金屬類介質（A )之表面產生古i 接加熱之塗佈式半導體阻抗發熱材料（i 〇 ) 回效率直 溫樹脂係具加強表面黏著之特性、半導體金=:= 有導電阻抗之作用，再利用水玻璃使前述半導體 =均勻化’同時於其中加入奈米瓷粉以作為半^雜二 1 0)之保溫並可散發達紅外線之能量；且“ k美升溫度之作用，且其中之高導金屬粉係作為、 之作用，而金屬碳粉係作為阻礙導通係數，平栴^ L弘 作用，且，前述各材料之重量百分比可依實干ς且几之 減者。 j依Λ際需要予以增 综上所述，本發明之半導體阻抗發熱材料可 2之高傳導金屬類介質，具有加熱效率佳及有；；：： 電流傳玉局傳導金屬類介質，進而達到節省能源之 效果者，為一甚具新穎性、進步性及可供產業上 =，實已符合發明專利之給與要件，爰依法提出^利申χ 祈t審查委員能詳予審查’並早日賜准本案專 利’貫為德便。 200532029 圖式簡單說明 (一） 圖式部份 第一圖係本發明以熱傳導效率較快之高傳導金屬類介質進 行塗裝之立體分解圖。 第二圖係本發明於高傳導金屬類介質表面塗裝絕緣層前之 表面處理流程圖。 第三圖係本發明之塗裝流程圖。 弟四圖係本發明之兩種不同方式處理之流程圖。 (二） 圖號部份 (1 )清洗高傳導金屬類介質之表面，使高傳導金屬 類介質表面不得殘留油污及懸浮微粒。 (1 0 )半導體阻抗發熱材料 (101)金屬線 (1 1 )脫脂處理 (1 2 )化學表面研磨處理 (1 3 )水洗 (1 4 )中和處理 (1 5 )低溫電解陽極氧化處理 (1 6 )第二次水洗 (1 7 )封口處理 (1 8 )熱水浸泡 (1 9 )烘乾 (2 )在高傳導金屬類介質表面使用上膠機或印刷處 理，將含瓷粉之耐高溫漆均勻附著於高傳導金屬類介質之 200532029 圖式簡單說明 ％ 一〜 …..一——-———— ______________ 表面。 (3 )使用約攝氏四百度之 冷卻後成為一個絕緣層表面。 教續烘烤三十分鐘， (4 )利用上膠機或印刷處理， 料印製於絕緣層表面上。 將半導體阻抗發熱材 溫連續烘烤三十分 附著於前述絕緣層 V 」八川π僻八二θ五十度之 鐘，冷卻後使半導體阻抗發熱材料均 表面上0) (Such as the processing procedure described in Figure 4 ~ No). Procedures (such as channeling brother Ming, the present invention can be roughly categorized 4 ^ 如 弟 四 _: metal-based medium (A ^ ', making it ancient)) low temperature electrolytic anodizing sequence at 1 μ ▲ β into an insulation and High temperature resistance effect, 8 t cloth grabbing 1 〇f ¥ body resistance heating material (1 0 uniformly attached to the second, glue machine or printing treatment, will be included) 7 on the surface of the hot material, only metal-based medium left (A). For residual oil stains on the surface and county, the surface should be treated with sandblasting first = after treatment 'on the surface of the high-conductivity gold semiconductor resistive medium (2), then use a gluing machine or printing material (1 〇), the printed metal wire heating material dr will contain high-temperature paint. On the surface, only the remaining metal wires (: L 〇 work: high-efficiency coated semiconductor resistance heating is mainly based on weight percentage of high-temperature resin 30 ％, 5%, powdered water glass 5%, nano-ceramic powder 丄 0, 、 Semiconductor metal oxides and metal carbon powders (proportion t), a total of 3 7%, heated and air-dried to coat the semiconductor resistance heating material ^ as the surface of the conductive metal medium (A), who 1 ( 1 Further research by electricity 200532029 V. Description of the invention (7) ^, ~-The current generation efficiency of the coated semiconductor resistance heating material (i 〇) which generates ancient heating on the surface of the highly conductive metal medium (A) Direct temperature resin has the characteristics of enhancing surface adhesion, semiconductor gold =: = has the effect of conductive resistance, and then uses water glass to make the aforementioned semiconductor = homogenize '. At the same time, nano-ceramic powder is added to it as a semi-hetero 2 10) It can insulate heat and dissipate the energy of developed infrared rays; and "k is the effect of increasing the temperature, and the high conductivity metal powder is used as, and the metal carbon powder is used as the hindering conduction coefficient, and the effect is flat, and , The weight percentage of the foregoing materials The ratio can be reduced by a few points. J According to the needs of the above, the semiconductor impedance heating material of the present invention can be a high-conductivity metal-based medium with a high heating efficiency and:; :: The current-passing jade bureau conducts metal-based media to achieve the effect of saving energy. It is very novel, progressive, and available to the industry. It has already met the requirements for the invention patent. It is hoped that the reviewing committee can examine in detail and “approve the patent in this case as soon as possible.” 200532029 Brief description of the diagram (1) The first diagram of the diagram part is a high-conductivity metal-based medium of the present invention with a fast heat conduction efficiency. A three-dimensional exploded view of painting. The second picture is the surface treatment flowchart of the present invention before the insulating layer is coated on the surface of the highly conductive metal medium. The third picture is the painting flowchart of the present invention. The fourth picture is the invention Flow chart of two different ways of processing. (II) Figure No. (1) Cleaning the surface of the highly conductive metal medium so that the surface of the highly conductive metal medium is free from oil and suspended particles. (1 0) Semiconductor impedance Hot material (101) Metal wire (1 1) Degreasing treatment (1 2) Chemical surface grinding treatment (1 3) Water washing (1 4) Neutralization treatment (1 5) Low temperature electrolytic anodizing treatment (1 6) Second water washing (1 7) Sealing treatment (1 8) Hot water immersion (1 9) Drying (2) Use a gluing machine or printing treatment on the surface of high-conductivity metal media to evenly attach the high-temperature resistant paint containing porcelain powder to the high-conductivity The 200532029 diagram of metal-based media is a simple explanation% Ⅰ ~ …… ..—————————— ______________ Surface. (3) It will become an insulating layer surface after cooling with about four degrees Celsius. Teach baking for 30 minutes. (4) Use a gluing machine or printing process to print the material on the surface of the insulation layer. The semiconductor resistance heating material is continuously baked for thirty minutes and adhered to the aforementioned insulating layer V. "Yagawa π, 82, θ, and 50 degrees. After cooling, the semiconductor resistance heating materials are all 0 on the surface.
么(6 )在該半導體阻抗發熱材料層上印製金屬線使用 約攝氏三百五十度之高溫連續烘烤三十分鐘，冷卻後使金 屬線附著於半導體阻抗發熱材料表面上。 (7 )利用上膠機或印刷處理，將含瓷粉之耐高溫漆 均句附著於半導體阻抗發熱材料之表面，只餘下金屬線之 導通點。 (8 )使用約攝氏三百五十度之高溫連續烘烤三十分 鐘’冷卻後使含瓷粉之耐高溫漆均勻附著於半導體阻抗發 熱材料之表面。 (9 )絕緣層 (A )高傳導金屬類介質(6) A metal wire is printed on the semiconductor resistance heating material layer and baked at a high temperature of about 350 degrees Celsius for 30 minutes. After cooling, the metal wire is adhered to the surface of the semiconductor resistance heating material. (7) Use a gluing machine or a printing process to attach the high temperature resistant paint containing porcelain powder to the surface of the semiconductor resistance heating material, leaving only the conduction points of the metal wires. (8) Using a high-temperature continuous baking at about 350 degrees Celsius for 30 minutes for continuous baking, after cooling, the ceramic powder-containing high-temperature-resistant paint is uniformly adhered to the surface of the semiconductor resistance heating material. (9) Insulating layer (A) Highly conductive metal dielectric
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