TW200531124A - Sensor integrating with temperature, humidity and pressure, and manufacturing method thereof - Google Patents
Sensor integrating with temperature, humidity and pressure, and manufacturing method thereof Download PDFInfo
- Publication number
- TW200531124A TW200531124A TW93105556A TW93105556A TW200531124A TW 200531124 A TW200531124 A TW 200531124A TW 93105556 A TW93105556 A TW 93105556A TW 93105556 A TW93105556 A TW 93105556A TW 200531124 A TW200531124 A TW 200531124A
- Authority
- TW
- Taiwan
- Prior art keywords
- humidity
- temperature
- scope
- patent application
- pressure sensor
- Prior art date
Links
Landscapes
- Pressure Sensors (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
Description
200531124 五、發明說明（1) 【發明所屬之技術領域】 本發明係涉及一種微感測器結構與製造方法改良，尤 其 良 是一種整合溫度、濕度與壓力之感測器及其製作方法改 〇 先前技術】 切 個 隨著科技的發展，半導體技術的研發與突破，使得一 物品皆可以微小化，如最初的電腦，其處理器 Processor)必須大到佔滿一大間房間，因由許多的單 大型電晶體一 一組成，而現今的電腦微處理器只要約一 個茶包大小的面積，且運算速度為最初的幾百幾千倍以 上；而且量測的最小單位從微米（μ in)演變為奈米（nm )或次奈米（0. 1 nm)，同樣的，在很多產業中，亦逐漸 微小化，如奈米塗料、奈米科技研發的生化產品等；同樣 的，因拜半導體製程之賜，因此有了微機電（MEMS， Micro-ElectroMechanical System)技術之產生，顧名思 義，表示機電元件可以微小化，如微型馬達、微型泵浦或 是微型感測器等，現有許多的學者、專家及產業等，投入 大量的資金在研發相關產品，因此常可在一些期刊中看到 相關訊息，如微機電期刊（J 〇 u r n a 1 〇 f200531124 V. Description of the invention (1) [Technical field to which the invention belongs] The present invention relates to an improvement in the structure and manufacturing method of a micro-sensor, particularly a sensor that integrates temperature, humidity, and pressure, and a method for manufacturing the same. Previous technology] With the development of science and technology, the research and development and breakthroughs of semiconductor technology have enabled an item to be miniaturized. For example, the original computer must have a processor that is large enough to occupy a large room. The transistors are composed one by one, and today's computer microprocessors only need an area of the size of a tea bag, and the operation speed is hundreds of thousands of times. The smallest unit of measurement has evolved from micrometers (μin) to nanometers. (Nm) or sub-nanometer (0.1 nm). Similarly, in many industries, it is gradually miniaturized, such as nano-coatings, bio-chemical products developed by nano-technology, etc .; similarly, the semiconductor manufacturing process Thanks to the emergence of Micro-ElectroMechanical System (MEMS) technology, as the name implies, it means that electromechanical components can be miniaturized, such as micromotors, micro Pumps or micro-sensors, etc., many scholars, experts and industries have invested a lot of money in research and development of related products, so you can often see relevant information in some journals, such as MEMS Journal (J urna 1 〇 f
MicroElectromechanical Systems)或是電子電機工程師 協會（I EEE)所出版之期刊等，以現有之訊息而言，大部 分之微感測器多為只具單一功能之微感測器，如只可單一 量測溫度或是濕度，如2 0 0 1年M e h m e n t D 〇 k m e e i與K h a 1 i 1 N a j a f i在微機電期刊所發表之論文中，利用微機電製程製MicroElectromechanical Systems) or journals published by the Institute of Electronic and Electrical Engineers (I EEE). In terms of existing information, most microsensors are mostly microsensors with a single function. Measure temperature or humidity, such as Mehment D 〇kmeei and K ha 1 i 1 N ajafi in the paper published in MEMS Journal in 2001, using MEMS manufacturing system
第5頁 性 一 貫 在一 器在 測可 感未 個尚。 多且體 合並一 整，於 能題器 少問測 鮮之感 術路個 >技電多 題今理出 問現處作 術決號製 技解訊可 1之欲含即 容決明包中 内解發且程 明欲本並製 發所 ，合 [( 體整 200531124 五、發明說明（2) 作一濕度計，另外在2 0 0 2年，Celine Lavill e與C 1 a u d e P e 1 1 e t亦利用微機電製程製作一醫療用之濕度度感測器， 鮮少能發現整合多個感測器在一體，並且包含訊號處理電 路，本申請人特為此精心研究可整合多種物理量感測器。 《解決問題之技術手段》 本發明利用一矽材質基體再連接一底板，且於該基體 利用微機電製程製作三個感測元件，即溫度、濕度與壓力 感測器。 該溫度感測器係利用一熱敏電阻因溫度變化而產生電 阻變化來感測溫度，並且在該溫度感測器與底板設有一間 隔空間，該間隔空間主要是為防止溫度感測器感測溫度 時，該溫度容易從溫度感測器中，因熱傳導而降低，導致 所量測之溫度並不準確。 該濕度感測器係利用高分子材料吸收水份後，造成所 述高分子材料之介電值改變，進而利用電容值改變來量測 濕度，本發明為電容式濕度感測器，在兩電極之間再間隔 一高分子材料，該高分子材料之特性為吸收水份時，會改Page 5 Sex has always been tested in one device. Multiple and physical integration into one whole, less questions about the freshness of the sense of the way to the tester > technical and electrical multiple questions now to ask the current location of the operation decision system technical solution can be included as soon as possible Nakanetaka released and Cheng Ming wanted to combine the hair and make the hairpin, together [(Integral 200531124 V. Description of the invention (2) as a hygrometer, and in 2002, Celine Lavill e and C 1 aude P e 1 1 et also uses a micro-electro-mechanical process to make a medical humidity sensor. Rarely can it be found that integrating multiple sensors in one and contains a signal processing circuit. The applicant has carefully studied this to integrate multiple physical quantity sensors. "Technical means to solve the problem" The present invention uses a silicon-based substrate to connect a bottom plate, and uses the micro-electro-mechanical process to make three sensing elements, that is, temperature, humidity, and pressure sensors. The temperature sensing The device senses temperature by using a thermistor to generate resistance changes due to temperature changes, and a space is provided between the temperature sensor and the bottom plate. The space is mainly to prevent the temperature sensor from sensing the temperature. Temperature easily from temperature In the tester, the measured temperature is not accurate due to the decrease in heat conduction. The humidity sensor uses a polymer material to absorb water, which causes the dielectric value of the polymer material to change, and then uses the capacitance value. The humidity is changed to measure the humidity. The present invention is a capacitive humidity sensor. A polymer material is further spaced between the two electrodes. When the property of the polymer material is to absorb moisture, it will change.
第6頁 200531124 五、發明說明（3) 變介電值，而且在該高分子材料之上下各設一電極，且在 上電極設有兩個像柵欄狀的電極，再配合下方之電極便形 成兩個電容互相串接，而上電極設計成栅攔狀，主要使高 分子材料能有較多面積接觸外界之環境，以增加該溼度感 測器之反應速度。Page 6 200531124 V. Description of the invention (3) Change the dielectric value, and set one electrode above and below the polymer material, and two electrodes like fences on the upper electrode, and then cooperate with the lower electrode to form The two capacitors are connected in series, and the upper electrode is designed in a grid shape, which mainly allows the polymer material to have more area to contact the outside environment, so as to increase the response speed of the humidity sensor.
該壓力感測器係利用一壓阻變化來感測壓力，首先該 壓力感測器在一矽材質基體上，利用離子摻雜而使該摻雜 之部分成為一半導體，該半導體可視為一壓阻，亦是利用 該半導體之電阻變化來感測壓力變化，而且在該壓力感測 器之底面設有一間隔空間而後再利用底板密封該間隔空 間，使該壓力感測器有一參考壓力，並且此時壓阻已成一 薄膜狀，該薄膜狀壓阻之一邊為參考壓力，另一邊為外界 之壓力，故，當外界之壓力小於參考壓力時，該薄膜狀之 壓阻便會向外凸出，所述薄膜因壓力差而造成電阻改變， 以藉此來量測壓力。 所述之溫度、濕度與壓力感測器可於一貫性整合製程 中完成，且該製程可與CMOS製程相配合，即訊號處理電路 先利用CMOS製程先製作，而後再直接於該訊號處理電路製 作感測器。The pressure sensor uses a piezoresistive change to sense the pressure. First, the pressure sensor is on a silicon substrate, and the doped portion is made into a semiconductor by ion doping. The semiconductor can be regarded as a pressure. Resistance, also uses the resistance change of the semiconductor to sense the pressure change, and a space is provided on the bottom surface of the pressure sensor, and then the space is sealed by the bottom plate, so that the pressure sensor has a reference pressure, and At this time, the piezoresistance has become a thin film. One side of the thin film piezoresistance is the reference pressure, and the other side is the external pressure. Therefore, when the external pressure is less than the reference pressure, the thin film piezoresistance will bulge outward. The film changes its resistance due to the pressure difference, so as to measure the pressure. The temperature, humidity, and pressure sensors can be completed in a consistent integrated process, and the process can be matched with the CMOS process, that is, the signal processing circuit is first produced by the CMOS process, and then directly produced by the signal processing circuit. Sensor.
《對於先前技術的效果》 經由本創作之改良，其優點可歸納如下： 1.本發明可利用一貫性整合製程即可製作出三種感測 器，節省許多製程時間、成本與提高良率。"Effects on the previous technology" After the improvement of this creation, its advantages can be summarized as follows: 1. The present invention can use the consistent integration process to make three types of sensors, saving a lot of process time, cost and improving yield.
第7頁 200531124 五、發明說明（4) 2. 本發明之製程可與CMOS製程相容，故可在訊號處理 電路製作完成後，再直接製作感測器，以減少製程與成 本。 3. 因本發明係利用微機電技術，來製作感測器，所以 其體積相當小，使用時所佔空間非常小、所消耗之能源同 樣相當小，可使用一般家庭、公司與醫院等之空調系統， 以控制室内之壓力、溫度與濕度，以配合空調系統之自動 控制，使環境可調整成一溫度梯度小、壓力與濕度適當之 環境。 4. 本發明亦可應用於醫療，因其體積相當小，可直製 作成一裝置，直接用於人體中來量測血壓、脈博與體溫， 馬上可直接監控人體中之一些變化，以適時提醒使用者注 意身體狀況，故發明之用途可謂相當廣泛。 【實施方式】 以下配合圖式對本創作的實施方式做進一步的說明後 當能明瞭。 一種整合溫度、濕度與壓力之感測器，包含： 一矽材質基體4再連接一底板5 (如玻璃），且於該基 體利用微機電製程製作三個感測元件，即溫度、濕度與壓 力感測器，且本發明可利用一貫性整合製程即可製作出三 種感測器，節省許多製程時間、成本與提高良率。 請參閱第一圖與第二圖，所示為本發明結構圖及感測器與 訊號處理電路結合圖。Page 7 200531124 V. Description of the invention (4) 2. The process of the present invention is compatible with the CMOS process, so the sensor can be directly manufactured after the signal processing circuit is completed to reduce the process and cost. 3. Because the present invention uses micro-electromechanical technology to make the sensor, its volume is quite small, the space occupied by it is very small, and the energy consumed is also relatively small. It can be used in general homes, companies and hospitals. The system can control the pressure, temperature and humidity in the room, and cooperate with the automatic control of the air-conditioning system, so that the environment can be adjusted to an environment with a small temperature gradient and appropriate pressure and humidity. 4. The invention can also be applied to medical treatment, because its volume is quite small, it can be directly made into a device, which can be directly used in the human body to measure blood pressure, pulse and temperature, and it can immediately directly monitor some changes in the human body to promptly remind The user pays attention to the physical condition, so the application of the invention is quite extensive. [Embodiment] The following description of the embodiment of the present invention will be made clear with reference to the drawings. A sensor integrating temperature, humidity and pressure, comprising: a silicon substrate 4 connected to a base plate 5 (such as glass), and using the micro-electro-mechanical process to produce three sensing elements on the substrate, namely temperature, humidity and pressure Sensors, and the present invention can use the consistent integration process to make three types of sensors, saving many process times, costs, and improving yield. Please refer to the first diagram and the second diagram, which are a structural diagram of the present invention and a combined diagram of a sensor and a signal processing circuit.
200531124 五、發明說明（5)200531124 V. Description of Invention (5)
該溫度感測器1係利用一熱敏電阻11因溫度變化而產 生電阻變化來感測溫度，我們所知，一般金屬皆有熱脹冷 縮之特性，因此，只要了解該金屬之物理特性，再搭配一 訊號處理電路a，即可作為一感測器，如我們利用金屬之 熱脹冷縮而影響該金屬電阻值之特點，來量測溫度，只是 不同的金屬其熱膨脹係數不同，有大有小，一般皆選用熱 膨脹係數較大之金屬，因當金屬之熱膨脹係數大時，金屬 對溫度之體積變化亦較明顯，當金屬之體積發生變化時， 其電阻亦隨之變化，故本實施例中選用鎳作為溫度感測器 1之熱敏電阻1 1，錄阻值較一般金屬高，且其對熱敏感度 較大，溫度變化其阻值變化較一般金屬多且其價格便宜， 而且該溫度感測器1在感測溫度時，該溫度感測器1應只消 耗少數熱量，且須防止溫度感測器1本身之熱傳導因素， 而影響所量測之數據，故本發明在該溫度感測器1與底板5 設有一間隔空間1 2，該間隔空間1 2主要是為防止溫度感測 器1感測溫度時，該溫度容易從溫度測器中因熱傳導而降 低，導致所量測之溫度並不準確。The temperature sensor 1 senses temperature by using a thermistor 11 to generate resistance changes due to temperature changes. As we know, general metals have the characteristics of thermal expansion and contraction. Therefore, as long as you understand the physical characteristics of the metal, Combined with a signal processing circuit a, it can be used as a sensor. For example, we use the characteristics of the metal's thermal expansion and contraction to affect the resistance of the metal to measure the temperature. However, different metals have different thermal expansion coefficients. Generally, metals with larger thermal expansion coefficients are used. When the metal's thermal expansion coefficient is large, the volume change of metal to temperature is more obvious. When the volume of metal changes, its resistance changes accordingly. In the example, nickel is used as the thermistor 11 of the temperature sensor 1. The recording resistance value is higher than that of general metals, and its sensitivity to heat is greater. The change in temperature changes its resistance value more than ordinary metals, and its price is cheap, and When the temperature sensor 1 senses temperature, the temperature sensor 1 should only consume a small amount of heat, and it must prevent the thermal conductivity of the temperature sensor 1 from affecting the measured data. Therefore, in the present invention, a space 12 is provided between the temperature sensor 1 and the bottom plate 5. The space 12 is mainly used to prevent the temperature from being easily transmitted from the temperature sensor due to heat conduction when the temperature sensor 1 senses the temperature. Lowered, resulting in inaccurate measured temperature.
本發明中溫度感測器1之熱敏電阻11，為使電阻能對 溫度變化敏感，所選用之材質為高熱阻係數（TCR)，另 外一點為若增加該材質之長度時，其阻值亦隨之增加，當 溫度變化時，增加熱敏電阻1 1之長度可累增電阻之變化 量，故，本發明之熱敏電阻1 1係利用多重折疊方式以增加 該熱敏電阻1 1之長度，且又可縮小體積。 該濕度感測器2係利用高分子材料2 1吸收水份後，造In the present invention, in order to make the resistance sensitive to temperature changes, the thermistor 11 of the temperature sensor 1 uses a high thermal resistance coefficient (TCR). Another point is that if the length of the material is increased, the resistance value is also With the increase, when the temperature changes, increasing the length of the thermistor 11 can accumulate the amount of change in resistance. Therefore, the thermistor 11 of the present invention uses multiple folding methods to increase the length of the thermistor 11 , And can reduce the size. The humidity sensor 2 is made of polymer material 21 after absorbing water,
第9頁 200531124 五、發明說明（6)Page 9 200531124 V. Description of the invention (6)
成所述高分子材料2 1之介電值改變，進而利用電容值改變 來量測濕度，本發明為電容式濕度感測器2，在兩電極之 間再間隔一高分子材料2 1，該高分子材料2 1之特性為吸收 水份時，會改變介電值，以本實施例而言，所用高分子材 料2 1為聚醯亞胺（Ρ ο 1 y I m i d e)，此外，亦可用苯環丁稀 (BCB，Benzocyclobutene)，且在該高分子材料21之上 下各設一電極，且在上電極2 2設有兩個像栅欄狀的電極， 再配合下方之電極便形成兩個電容互相串接，而上電極2 2 設計成柵攔狀，主要使高分子材料2 1能有較多面積接觸外 界之環境，以增加該溼度感測器2之反應速度。The dielectric value of the polymer material 21 is changed, and then the capacitance value is used to measure humidity. The present invention is a capacitive humidity sensor 2, and a polymer material 21 is further spaced between the two electrodes. The characteristic of the polymer material 21 is that it will change the dielectric value when it absorbs moisture. In this embodiment, the polymer material 21 used is polyimide (P ο 1 y I mide). In addition, it can also be used Benzenecyclobutene (BCB, Benzocyclobutene), and an electrode is arranged above and below the polymer material 21, and two electrodes like a fence are provided on the upper electrode 22, and two electrodes are formed together with the lower electrode to form two The capacitors are connected in series, and the upper electrode 2 2 is designed in a grid shape, which mainly allows the polymer material 21 to have a larger area to contact the outside environment to increase the response speed of the humidity sensor 2.
該壓力感測器3係利用一壓阻3 1變化來感測壓力；首 先該壓力感測器3在一矽材質基體4上，利用離子摻雜而使 該摻雜之部分成為一半導體，該半導體可視為一壓阻，亦 是利用該半導體之電阻變化來感測壓力變化，但是如何有 一參考壓力以用來比較外界之壓力呢？於是本發明在該壓 力感測器3之底面設有一間隔空間3 2而後再利用底板5密封 該間隔空間3 2，使該壓力感測器3有一參考壓力，此時， 該薄膜之一邊為參考壓力，另一邊為外界之壓力，故，當 外界之壓力小於參考壓力時，該薄膜狀便會向外凸出，而 帶動位於薄膜上之壓阻3 1產生形變而造成其阻值改變，以 藉此來量測壓力，且本發明設計壓阻3 1位於薄膜邊緣，係 因為當外界壓力改變，使得薄膜產生形變，此時最大應力 發生於薄膜邊緣，位於薄膜邊緣的壓阻3 1將產生最大的阻 值變化。The pressure sensor 3 senses pressure by using a change in piezoresistance 31. First, the pressure sensor 3 uses an ion doping on a silicon substrate 4 to make the doped portion a semiconductor. A semiconductor can be regarded as a piezoresistance. It also uses the resistance change of the semiconductor to sense the pressure change, but how can there be a reference pressure to compare the external pressure? Therefore, in the present invention, a space 32 is provided on the bottom surface of the pressure sensor 3, and then the space 5 is sealed by the bottom plate 5, so that the pressure sensor 3 has a reference pressure. At this time, one side of the film is used as a reference. Pressure, the other side is the external pressure, so when the external pressure is less than the reference pressure, the film shape will bulge outward, and the piezoresistance 31 on the film will be deformed to cause its resistance value to change. This is used to measure the pressure, and the piezoresistance 31 is designed to be located at the edge of the film, because when the external pressure changes, the film is deformed. At this time, the maximum stress occurs at the edge of the film, and the piezoresistance 3 1 at the edge of the film will produce Maximum resistance change.
第10頁 200531124 五、發明說明（7) 上述之壓阻3 1係利用矽材質基體4再摻雜離子而形 成，現今使用之矽材質基體4一般分為N型（N-type)與P 型（P-type)，不同的材質基體所摻雜之離子不同，如矽 材質基體4為N型，則所摻雜之金屬離子為電洞型離子，如 硼（B)等，若矽材質基體4為P型，則所摻雜之金屬離子 為電子型金屬離子，如磷（P)、坤（As)或銻（Sb) 等。Page 10 200531124 V. Description of the invention (7) The above-mentioned piezoresistance 3 1 is formed by re-doping silicon substrate 4 with ions. The silicon substrate 4 currently used is generally divided into N-type and P-type. (P-type), different materials doped with different ions, such as silicon material substrate 4 is N-type, the doped metal ions are hole-type ions, such as boron (B), etc., if the silicon material substrate 4 is P type, the metal ions doped are electronic type metal ions, such as phosphorus (P), Kun (As) or antimony (Sb).
所述之溫度、濕度與壓力感測器3可於一貫性整合製 程中完成，且該製程可與CMOS製程相配合，即訊號處理電 路a先利用CMOS製程先製作，而後再直接於該訊號處理電 路a製作感測器。 請參閱第三圖（a)〜（Q)所示為本發明之製程步驟 圖。以下說明製作該感測器之製程，包含： 步驟一：將矽材質基體4利用標準清潔程序去除該基 體之表面污染源，一般空氣中有許多污染源，如人體之毛 髮、皮屑、空氣中之灰塵皆會沾染在矽材質基體4之表 面，這些污染源在製程中若不去除，將會嚴重影響產品良 率，所以再製程最初步驟，一定須利用標準清潔程序清潔 該表面，且經清潔之表面可增加附著性。The temperature, humidity and pressure sensor 3 can be completed in a consistent integrated process, and the process can be matched with the CMOS process, that is, the signal processing circuit a is first manufactured by the CMOS process, and then processed directly on the signal The circuit a makes a sensor. Please refer to the third diagrams (a) to (Q) for the process steps of the present invention. The following describes the manufacturing process of the sensor, including: Step 1: Use silicon substrate 4 to remove the surface pollution sources of the substrate using standard cleaning procedures. Generally, there are many sources of pollution in the air, such as human hair, dander, and dust in the air. All will be contaminated on the surface of the silicon substrate 4. If these pollution sources are not removed during the manufacturing process, the product yield will be seriously affected. Therefore, the surface must be cleaned by standard cleaning procedures during the initial steps of the process. Increase adhesion.
步驟二：在石夕材質基體4上沉積（Deposition)二氧 化矽4 1當作絕緣層，及摻雜擋罩，該二氧化矽4 1主要用來 避免矽材質基體4在摻雜（Doping)過程中，在不必要摻 雜之位置處被所摻雜之離子污染。 步驟三：在已沉積之二氧化矽4 1上開孔，該孔之位置Step 2: Deposit (Deposition) silicon dioxide 4 1 on the shixi material substrate 4 as an insulating layer and a doping shield. The silicon dioxide 41 is mainly used to prevent the silicon substrate 4 from being doped. During the process, contamination with doped ions occurs at unnecessary doping positions. Step 3: open a hole in the deposited silicon dioxide 41, the position of the hole
第11頁 200531124 五、發明說明（8) 即為欲摻雜之位置，一般開孔係利用蝕刻製程以達成，現 今之蝕刻製程一般分為濕式蝕刻與乾式蝕刻，所謂濕式蝕 刻係利用化學溶液與材料產生反應以達成蝕刻之目的，另 一乾式蝕刻係利用離子束與氣態化學蝕刻劑在材料上產生 化學反應，以消耗欲蝕刻之材料。Page 11 200531124 V. Description of the invention (8) This is the position to be doped. Generally, the opening is achieved by an etching process. Today's etching process is generally divided into wet etching and dry etching. The so-called wet etching uses chemical The solution reacts with the material to achieve the purpose of etching. Another dry etching method uses an ion beam and a gaseous chemical etchant to generate a chemical reaction on the material to consume the material to be etched.
步驟四：在開孔位置摻雜離子以形成壓力感測器3之 壓阻3 1，該壓阻3 1係利用矽材質基體4再摻雜離子而形 成，現今使用之矽材質基體4一般分為N型（N-type)與P 型（P-type)，不同的材質基體所摻雜之離子不同，如矽 材質基體4為N型，則所摻雜之金屬離子為電洞型金屬離 子，如硼（B)等，若矽材質基體4為P型，則所摻雜之金 屬離子為電子型金屬離子，如磷（P)、砷（As)或銻 (Sb)等。 步驟五：沉積氮化矽4 2，作為後續矽蝕刻製程步驟七 之保護層。 步驟六：在矽材質基體4背面開蝕刻孔，亦同樣如步 驟三之製程。 步驟七：蝕刻矽材質基體4，以製作出壓力感測器3與 溫度感測器1之隔離空間1 2，3 2，該隔離空間1 2，3 2為壓 力感測器3之參考壓力及溫度感測器1之熱傳導隔離空間。Step 4: Doping ions at the openings to form the piezoresistance 31 of the pressure sensor 3. The piezoresistance 31 is formed by doping the silicon substrate 4 with ions. The silicon substrate 4 used today is generally divided into It is N-type and P-type. The ions doped with different materials are different. If the silicon substrate 4 is N-type, the doped metal ions are hole-type metal ions. For example, if boron (B) is used, if the silicon substrate 4 is P-type, the doped metal ions are electronic metal ions, such as phosphorus (P), arsenic (As), or antimony (Sb). Step 5: Deposit silicon nitride 42 as a protective layer in step 7 of the subsequent silicon etching process. Step 6: Make an etching hole on the back of the silicon substrate 4 as in the process of Step 3. Step 7: The silicon substrate 4 is etched to produce an isolation space 1 2 and 3 2 of the pressure sensor 3 and the temperature sensor 1. The isolation spaces 1 2 and 3 2 are reference pressures of the pressure sensor 3 and Thermally conductive isolated space of the temperature sensor 1.
步驟八：移除背面氮化矽4 2及二氧化矽4 1，以準備矽 材質基體4背面與底板5之陽極接合。 步驟九：將矽材質基體4陽極接合於底板5，該陽極接 合 （Anodic bonding)在傳統上用來接合金屬與玻璃介Step 8: Remove the silicon nitride 4 2 and silicon dioxide 41 1 on the back surface to prepare an anode joint between the back surface of the silicon substrate 4 and the bottom plate 5. Step 9: Anodically bond the silicon substrate 4 to the bottom plate 5. The anodic bonding is traditionally used to join metal and glass substrates.
第12頁 200531124 五、發明說明（9) 面的高溫程序（高於1 0 0 o°c )，以在介面上形成金屬氧化物 與玻璃的混合物，可提供高強度的接合效果；另一種方式 為利用大電場可以取代高溫而將接合溫度降低至4 0 0°C左 右來進行，其原理為玻璃中的正離子被負電極驅動，而在 介面上形成很大的電場，將兩面更加推進形成連接，其一 般步驟為：（1)將玻璃置於氧化矽上 (2) 加熱至約攝氏4 0 0度（t：) (3) 加正壓約1 2 0 0伏特（V)於矽晶圓上。 步驟十：沉積金屬一以做為溫度感測器1之電阻材料 及濕度感測器2之下電極2 3，於本實施例中，沉積金屬鎳 或是亦可，且沉積金屬可用電子搶蒸鍍或濺鍍方式。 步驟十一：塗佈光阻43( Photoresist)。 步驟十二：在壓阻3 1位置上方之光阻4 3顯影出蝕刻 孔。 步驟十三：將壓阻3 1上方之氮化矽4 2蝕刻移除，且在 蝕刻移除後，利用溶劑去除所塗佈之光阻4 3。 步驟十四：再塗佈高分子材料2 1，於本實施例中，該 高分子材料21為聚醯亞胺（Poly i mid e)，亦可用其他高 分子材料 21如苯環丁烯（BCB，Benzocyclobutene)。 步驟十五：顯影高分子材料2 1作為濕度感測器2之感 濕膜及溫度感測器1之熱敏電阻1 1保護膜。 步驟十六：沉積金屬二4 4，於本實施例中，沉積金屬 銅或是金亦可。 步驟十七：再經塗光阻4 3與顯影出蝕刻孔後，再蝕刻Page 12 200531124 V. Description of the invention (9) High temperature program (higher than 100 ° C) to form a mixture of metal oxide and glass on the interface, which can provide high-strength bonding effect; another way In order to use a large electric field instead of high temperature, the junction temperature can be reduced to about 400 ° C. The principle is that the positive ions in the glass are driven by the negative electrode, and a large electric field is formed on the interface, which promotes the formation of both sides. To connect, the general steps are: (1) placing the glass on silicon oxide (2) heating to about 400 degrees Celsius (t :) (3) adding a positive pressure of about 120 volts (V) to the silicon crystal On the circle. Step 10: Deposit metal 1 as the resistance material of the temperature sensor 1 and the lower electrode 2 3 of the humidity sensor 2. In this embodiment, nickel metal may be deposited, and the deposited metal may be electron-steamed. Plating or sputtering method. Step 11: Coating Photoresist 43. Step 12: The photoresist 4 3 above the piezoresistance 31 position develops an etching hole. Step 13: The silicon nitride 4 2 above the piezoresistance 31 is etched and removed, and after the etching is removed, the coated photoresist 43 is removed with a solvent. Step 14: Re-coat the polymer material 21. In this embodiment, the polymer material 21 is polyimide, and other polymer materials 21 such as phenylcyclobutene (BCB , Benzocyclobutene). Step 15: Develop the polymer material 21 as the sensor for the humidity sensor 2. The wet film and the thermistor 1 1 protective film for the temperature sensor 1. Step sixteen: deposit metal 244. In this embodiment, copper or gold may be deposited. Step 17: Etching the photoresist 4 3 and developing the etching hole, and then etching
200531124 五、發明說明（10) 金屬二4 4，以成形出濕度感測器上電極2 2，溫度感測器1 之量測點及壓力感測器3之導線，因材質為銅或金，可減 少訊號損失降低干擾。 上述之金屬沉積係利用電子搶蒸鍍方式或是濺鍍方式 達成。 故本發明可利用一貫性整合製程即可製作出三種感測 器，節省許多製程時間、成本，並且經由本發明之製程可 與CMOS製程相容，故可在訊號處理電路a製作完成後，再 直接製作感測器，以減少成本。 因本發明係利用微機電技術，來製作感測器，所以其 體積相當小，使用時所佔空間非常小、所消耗之能源同樣 相當小，可使用一般家庭、公司與醫院等之空調系統，以 控制室内之壓力、溫度與濕度，以配合空調系統之自動控 制，使環境可調整成一溫度梯度小、壓力與濕度適當之環 境。 若將本發明應用於醫療時，因其體積相當小，可直製 作成一裝置，直接用於人體中來量測血壓、脈博與體溫， 馬上可直接監控人體中之一些變化，以適時提醒使用者注 意身體狀況，故發明之用途可謂相當廣泛。 以上所述者僅為用以解釋本創作之較佳實施，並非企 圖據以對本創作作任何形式上之限制，是以，凡有在相同 之創作精神下所作有關本創作之任何修飾或變更，皆仍應 包括在本創作意圖保護之範疇。200531124 V. Description of the invention (10) Metal 2 4 4 to form the upper electrode 2 2 of the humidity sensor, the measurement points of the temperature sensor 1 and the wires of the pressure sensor 3, because the material is copper or gold, Can reduce signal loss and reduce interference. The above-mentioned metal deposition is achieved by an electronic grab deposition method or a sputtering method. Therefore, the present invention can use the consistent integration process to produce three types of sensors, which saves a lot of process time and cost. The process of the present invention is compatible with the CMOS process. Therefore, after the signal processing circuit a is completed, Make sensors directly to reduce costs. Because the present invention uses micro-electromechanical technology to make the sensor, its volume is quite small, the space it takes up is very small, and the energy consumed is also relatively small. It can use air conditioning systems for general homes, companies, and hospitals. In order to control the pressure, temperature and humidity in the room, and to cooperate with the automatic control of the air-conditioning system, the environment can be adjusted to an environment with a small temperature gradient and appropriate pressure and humidity. If the present invention is applied to medical treatment, because its volume is quite small, it can be directly made into a device, which can be directly used in the human body to measure blood pressure, pulse and temperature. It can immediately directly monitor some changes in the human body to promptly use it People pay attention to their physical condition, so the application of the invention can be described as quite wide. The above are only used to explain the better implementation of this creation, and are not intended to restrict the creation in any form. Therefore, any modification or change related to this creation under the same spirit of creation, They should still be included in the scope of protection of this creative intention.
200531124 圖式簡單說明 第一圖係顯示本發明之結構圖。 第二圖係顯示本發明之感測器與訊號處理電路結合圖。 第三圖（a)〜（q)係顯示本發明之製程步驟圖。 【元件符號說明】 (1) 溫度感測器 (1 1)熱敏電阻 (1 2)間隔空間 (2) 濕度感測器200531124 Brief description of the drawings The first diagram is a structural diagram showing the present invention. The second figure is a combination diagram of a sensor and a signal processing circuit of the present invention. The third figures (a) to (q) are diagrams showing the process steps of the present invention. [Description of component symbols] (1) Temperature sensor (1 1) Thermistor (1 2) Space (2) Humidity sensor
(21) 高分子材料 (22) 上電極 (23) 下電極 (3) 壓力感測器 (31)壓阻 (3 2)間隔空間 (4) 矽材質基體 (4 1)二氧化矽 (4 2)氮化矽 (43) 光阻 (44) 金屬二(21) Polymer material (22) Upper electrode (23) Lower electrode (3) Pressure sensor (31) Piezoresistance (3 2) Space (4) Silicon substrate (4 1) Silicon dioxide (4 2 ) Silicon Nitride (43) Photoresist (44) Metal II
(5) 底板 (a)訊號處理電路(5) Backplane (a) Signal processing circuit
第15頁Page 15
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93105556A TW200531124A (en) | 2004-03-03 | 2004-03-03 | Sensor integrating with temperature, humidity and pressure, and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93105556A TW200531124A (en) | 2004-03-03 | 2004-03-03 | Sensor integrating with temperature, humidity and pressure, and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW200531124A true TW200531124A (en) | 2005-09-16 |
Family
ID=52348459
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93105556A TW200531124A (en) | 2004-03-03 | 2004-03-03 | Sensor integrating with temperature, humidity and pressure, and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200531124A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102692294A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Composite pressure transducer and formation method thereof |
| TWI400472B (en) * | 2009-05-11 | 2013-07-01 | Univ Nat Cheng Kung | Mems-based weather station and the fabrication method of the same |
| US20140291677A1 (en) * | 2013-03-29 | 2014-10-02 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
| US20150082920A1 (en) * | 2012-03-26 | 2015-03-26 | Technion Research & Development Foundation Limited | Platform unit for combined sensing of pressure, temperature and humidity |
| CN105158305A (en) * | 2015-10-23 | 2015-12-16 | 上海集成电路研发中心有限公司 | Method for manufacturing humidity sensor compatible with CMOS process |
| CN107087357A (en) * | 2017-06-27 | 2017-08-22 | 深圳市刷新智能电子有限公司 | A kind of manufacture method of Temperature Humidity Sensor and Temperature Humidity Sensor |
-
2004
- 2004-03-03 TW TW93105556A patent/TW200531124A/en unknown
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI400472B (en) * | 2009-05-11 | 2013-07-01 | Univ Nat Cheng Kung | Mems-based weather station and the fabrication method of the same |
| US20150082920A1 (en) * | 2012-03-26 | 2015-03-26 | Technion Research & Development Foundation Limited | Platform unit for combined sensing of pressure, temperature and humidity |
| US9625341B2 (en) * | 2012-03-26 | 2017-04-18 | Technion Research & Development Foundation Limited | Platform unit for combined sensing of pressure, temperature and humidity |
| CN102692294B (en) * | 2012-05-29 | 2014-04-16 | 上海丽恒光微电子科技有限公司 | Composite pressure transducer and formation method thereof |
| CN102692294A (en) * | 2012-05-29 | 2012-09-26 | 上海丽恒光微电子科技有限公司 | Composite pressure transducer and formation method thereof |
| US10317357B2 (en) * | 2013-03-29 | 2019-06-11 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
| US20140291677A1 (en) * | 2013-03-29 | 2014-10-02 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
| US9176089B2 (en) * | 2013-03-29 | 2015-11-03 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
| US9689824B2 (en) | 2013-03-29 | 2017-06-27 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
| US11009477B2 (en) | 2013-03-29 | 2021-05-18 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
| US20170261458A1 (en) * | 2013-03-29 | 2017-09-14 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
| US10094797B2 (en) * | 2013-03-29 | 2018-10-09 | Stmicroelectronics Pte Ltd. | Integrated multi-sensor module |
| CN105158305A (en) * | 2015-10-23 | 2015-12-16 | 上海集成电路研发中心有限公司 | Method for manufacturing humidity sensor compatible with CMOS process |
| CN107087357A (en) * | 2017-06-27 | 2017-08-22 | 深圳市刷新智能电子有限公司 | A kind of manufacture method of Temperature Humidity Sensor and Temperature Humidity Sensor |
| CN107087357B (en) * | 2017-06-27 | 2023-10-13 | 深圳刷新生物传感科技有限公司 | Temperature and humidity sensor and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| EP3402393B1 (en) | Paper based electronics platform | |
| Lee et al. | Fabrication of micro sensors on a flexible substrate | |
| CN106908176B (en) | Multi-phase dielectric layer capacitive pressure sensor with micro-structure and manufacturing method thereof | |
| Zhao et al. | A fully packaged CMOS interdigital capacitive humidity sensor with polysilicon heaters | |
| Lee et al. | Micromachine-based humidity sensors with integrated temperature sensors for signal drift compensation | |
| CN102285632B (en) | Sensor and manufacture method thereof | |
| Yang et al. | Compliant and low-cost humidity nanosensors using nanoporous polymer membranes | |
| CN107089640B (en) | MEMS chip and preparation method thereof | |
| JP5425214B2 (en) | Capacitive humidity sensor and manufacturing method thereof | |
| CN100420021C (en) | Single slice integration temperature, humidity, pressure sensor chip based on polymer material | |
| Zampetti et al. | Design and optimization of an ultra thin flexible capacitive humidity sensor | |
| CN102313621B (en) | Sensor and manufacture method thereof | |
| KR100811861B1 (en) | Method for manufacturing of tactile sensor | |
| CN201653604U (en) | Pressure sensor | |
| Rao et al. | Molybdenum microheaters for MEMS-based gas sensor applications: Fabrication, electro-thermo-mechanical and response characterization | |
| KR20100070220A (en) | Humidity sensor and manufacturing method thereof | |
| KR20090064693A (en) | Micro gas sensor and manufacturing method thereof | |
| He et al. | A silicon directly bonded capacitive absolute pressure sensor | |
| IE20110548A1 (en) | A method for fabricating a sensor | |
| CN101532975A (en) | Constant temperature measurement-type micro humidity sensor and producing method thereof | |
| Sheeparamatti et al. | Fabrication and characterization of polysilicon-on-insulator (PolySOI) and a-SOI based micro piezoresistive pressure sensor for harsh environment applications | |
| US8181531B2 (en) | Accessible stress-based electrostatic monitoring of chemical reactions and binding | |
| TW200426354A (en) | Capacitive semiconductor pressure sensor | |
| TW200531124A (en) | Sensor integrating with temperature, humidity and pressure, and manufacturing method thereof | |
| JP6184006B2 (en) | Pressure sensor |