TW200530380A

TW200530380A - Polishing composition and polishing method

Info

Publication number: TW200530380A
Application number: TW093136141A
Authority: TW
Inventors: Keigo Ohashi; Toshiki Owaki
Original assignee: Fujimi Inc
Priority date: 2003-11-26
Filing date: 2004-11-24
Publication date: 2005-09-16
Also published as: US20050148291A1; JP4974447B2; MY154434A; JP2005154208A; CN1637101A; US20070004322A1

Abstract

A polishing composition contains silicon dioxide, an alkaline compound, and water. Silicon dioxide is, for example, colloidal silica, fumed silica, or precipitated silica. The alkaline compound is, for example, ammonium carbonate, potassium carbonate, sodium carbonate, ammonium hydrogen carbonate, potassium hydrogen carbonate, sodium hydrogen carbonate, ammonium phosphate, potassium phosphate, sodium phosphate, ammonium hydrogen phosphate, potassium hydrogen phosphate, or sodium hydrogen phosphate. The polishing composition can be suitably used in applications for polishing a glass substrate.

Description

200530380 九、發明説明：【發明所屬之技術領域】本發明是有關於一種用於研磨如硬碟或相似物之資料錄製媒體（information-recording medium)用玻璃基板之研磨組成物。本發明亦關於一種應用此研磨組成物之研磨方法。【先前技術】傳統上，用於研磨資料錄製媒體用玻璃基板研磨組成物以爲習知。於曰本早期公開之第200丨_89748號專利申請案中揭露了包括主要由如氧化鈽之稀土氧化物組成之研磨料與水之一種研磨組成物（於下文中稱之爲第一習知研磨組成物）。於曰本早期公開之第之⑽^丨4“^號專利申請案則揭露了包括擇自由包括含鐵氧化物（iron_c〇ntaining 〇xide)與含鐵基化合物（iron-containing basic c〇mp〇und)所組成族群之至少-研磨料與水之一種研磨組成物(於下文中稱之爲第：：知研磨組成物）。上述第一盘麓-; 研磨组成物可藉由何磨斗0作用而機械地研磨一玻璃基板。應用於研磨玻璃基底之研磨組成物所需條件，包括： (1) 研磨後之玻璃基板之表面粗糖度爲小· (2) 研磨組成物需易於清除，亦 ^ ^ ^ , 研磨、、且成物需可_山 m冼而自玻璃基板上輕易移除；和由 (3) 研磨粒於研磨組成物中需有良好之分散性；以及200530380 IX. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a grinding composition for a glass substrate used for grinding information-recording medium such as a hard disk or the like. The invention also relates to a grinding method using the grinding composition. [Prior Art] Conventionally, it has been conventionally known that a glass substrate polishing composition for polishing a data recording medium is used. In an earlier-published patent application No. 200 丨 _89748, an abrasive composition including an abrasive and water mainly composed of a rare earth oxide such as thorium oxide (hereinafter referred to as the first conventional Grinding composition). No. ^^ 4 "^ patent application published in the early period of this year disclosed that the iron oxide includes iron-containing oxide (iron_c〇ntaining 〇xide) and iron-containing basic compound (iron-containing basic commp). und) at least-an abrasive composition of abrasive material and water (hereinafter referred to as :: known abrasive composition). The above first plate foot-; It can mechanically grind a glass substrate. The conditions required for a polishing composition used to grind a glass substrate include: (1) the coarseness of the surface of the glass substrate after grinding is small; (2) the polishing composition needs to be easy to remove, and ^ ^ ^, Grinding, and the product must be easily removed from the glass substrate; and (3) the abrasive particles must have good dispersibility in the polishing composition; and

2188-6693-P 5 200530380 適用於快速 (4)研磨組成物需具有高物料移除率，例如地研磨玻璃基板。然而’上述第一與第二習求，因而便需針對其加以改善知研磨組成物並不滿足上述需【發明内容】 —種研磨組成的爲提供《—種有鑑於此，本發明的主要目的就是提供物，其適用於研磨玻璃基板。本發明之另一目應用此研磨組成物之研磨方法。爲達上述目的，本發明提供了一種研廢 Μ试組成物。此研磨組成物適用於研磨一玻璃基板，其包括二氧乳化矽、鹼性化合物與水。本發明一提供了一種研磨玻璃基底之方法，其包括下列步驟：提供上述研磨組成物，以及利用此研磨組成物研磨玻璃基板表面。爲了讓本發明之上述和其他目的、特徵、和優點能更明顯易懂，下文特舉一較佳實施例，並配合所附圖示，作詳細説明如下：【實施方式】本發明之實施例將配合下文作一詳細插述。 2188-6693- 6 200530380 應用於如磁碟之資料錄製媒體之玻璃基板，係由如鋁矽酸鹽玻璃（aluminosilicate glass)、鈉鈣玻璃（soda lime glass)、故版鈉銘石夕鹽玻璃（s〇da aluminosilicate glass)、爛矽酸鋁玻璃（alumino b〇rosilicate glass)、硼矽酸鋁玻璃 (borosilicate glass)、石英玻璃（quartz giass)或結晶玻璃 (crystallized glass)等材質所組成。結晶玻璃之主要結晶相可能爲鋰輝石（spodumene)、模來石（muiHte)、铭硼酸鹽結晶 (aluminum borate crystal)、β_石英固態溶液、α_石英、堇青石（cordierite)、頑火石（enstatite)、鋇長石（celsian)、矽灰石 (wollastonite)、#5 長石（anorthite)、鎂橄欖石（f〇rsterite)、矽酸鐘（lithium metasilicate)或二矽酸鋰（lithium disilicate)。玻璃基板通¥藉由化學機械研磨程序之應用，藉以將其表面鏡面化處理。一般而，爲了改善材料移除率與研磨後玻璃基版之研磨品質等目的，研磨玻璃基板程序之施行可細分爲以下數個研磨步驟。舉例來説，此些研磨步驟包括：粗磨玻璃基板表面之步驟以及細磨玻璃基板表面之步驟。換言之，此些研磨步驟已括·預磨（prellminarily p〇lishing)玻璃基板表面之步驟以及抛光研磨（flnished_p〇lishing)之步驟。舉例來説，依據本實犯例（研磨組成物，可用於此些研磨步驟中之最終研磨步驟（拋光研磨步驟）。接著置入研磨後玻璃基板於化學強化私序彳J用低/jnL離子父換方法或類似方法，以改善其對於震2188-6693-P 5 200530380 Suitable for rapid (4) Grinding composition needs to have high material removal rate, such as ground glass substrate. However, the above first and second requirements need to be improved. The grinding composition does not meet the above needs. [Summary of the Invention]-A kind of grinding composition is provided to provide "-In view of this, the main purpose of the present invention It is a provision that is suitable for grinding glass substrates. Another object of the present invention is a polishing method using the polishing composition. To achieve the above object, the present invention provides a waste M test composition. The polishing composition is suitable for polishing a glass substrate, which includes dioxy-emulsified silicon, an alkaline compound, and water. The first aspect of the present invention provides a method for polishing a glass substrate, which includes the following steps: providing the above-mentioned polishing composition, and polishing the surface of a glass substrate by using the polishing composition. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below in conjunction with the accompanying drawings, and described in detail as follows: [Embodiments] Embodiments of the present invention This will be explained in more detail below. 2188-6693- 6 200530380 Glass substrates used in data recording media such as magnetic disks are made of materials such as aluminosilicate glass, soda lime glass, and old soda lime salt glass ( Soda aluminosilicate glass), alumino borosilicate glass, borosilicate glass, quartz giass, or crystallized glass. The main crystal phases of crystallized glass may be spodumene, muiHte, aluminum borate crystal, β-quartz solid solution, α-quartz, cordierite, and refractory ( enstatite), barium feldspar (celsian), wollastonite (wollastonite), # 5 feldspar (anorthite), forsterite (lithorite), lithium silicate (lithium metasilicate) or lithium disilicate (lithium disilicate). The glass substrate is mirror-finished by the application of a chemical mechanical polishing process. Generally, in order to improve the material removal rate and the grinding quality of the ground glass substrate, the implementation of the grinding glass substrate procedure can be divided into the following several grinding steps. For example, these grinding steps include a step of rough grinding the surface of the glass substrate and a step of fine grinding the surface of the glass substrate. In other words, these polishing steps include the steps of prellminarily plishing the surface of the glass substrate and the steps of polishing and polishing. For example, according to this actual case (the polishing composition can be used in the final polishing step (polishing polishing step) of these polishing steps). Then the glass substrate after polishing is placed in a chemically strengthened private sequence, and low / jnL ions are used. Parent swap method or similar method to improve its resistance to earthquakes

2188-6693-P 7 200530380 動與搖晃之耐性。人依據本發明實施例之研磨組成物包括二氧化石夕、驗性化合物以^水。二氧化石夕可作爲機械研磨玻璃基板用之研磨料。一氧化發可能A PL錄r/r / '、、多心石夕（colloidal silica)、燻矽（fumed silica)或沉澱型矽（ P ated silica)。其中，較佳地使用膠態矽或燻矽，以得到鲂供主』&低表面粗糙度之研磨後玻璃基板，而膠態石夕爲最佳之選擇。认擇万；研磨組成物可包括一或多種二氧化石夕。 & 一乳化石夕爲膠態石夕時，藉由比表面積法（BET法）所判足出之此膠態發之特余志；〜特疋表面區域之平均粒徑Dsa，較佳地介 7、5 300奈米’更佳地介於5_2⑼奈米，而最佳地介於$七〇奈米。而藉由雷射繞射散射法所判定出此膠㈣之平均粒後2188-6693-P 7 200530380 Resistance to movement and shaking. The abrasive composition according to the embodiment of the present invention includes stone dioxide, a test compound and water. Stone dioxide can be used as an abrasive for mechanically grinding glass substrates. Nitric oxide may be APL, r / r / ', colloidal silica, fumed silica, or precipitated silica. Among them, colloidal silicon or fumed silicon is preferably used to obtain a ground glass substrate with low surface roughness, and colloidal stone is the best choice. It is optional; the abrasive composition may include one or more types of dioxide. & When an emulsified stone is a colloidal stone, the special hair of this colloidal hair judged by the specific surface area method (BET method); ~ the average particle diameter Dsa of the surface area of the special rock, preferably introduced 7,5 300 nanometers' is more preferably between 5 and 2 nanometers, and most preferably between $ 700 nanometers. The average particle size of this capsule was determined by laser diffraction scattering method.

Dn4 ’較佳地介於5 300太I ^ ,, , A 、3υϋ不未，更佳地介於5-200奈米，而最佳地’丨於5-1 50奈米。當二氧化矽爲燻矽時，藉由珐所判疋出之此膠悲石夕（特足表面區域之燒石夕之平均粒徑〜，幸乂佳地於10-3 00奈米’更佳地介於1〇_2〇〇奈米，且最佳地介於10-120奈米。而藉由雷射繞射散射法所判定出此壤石夕 (平均粒徑dN4，較佳地介於3G.谓奈米，更佳地介於你_ 奈米，而最佳地介於50-300奈米。當膠態石夕之平均粒徑、或DN4或當燒石夕之平均粒徑Dsa或〇Ν4過小時，將可能得到不夠高之材料移除率。而當膠態珍之平均粒徑〜或 S燻矽之平均粒徑Dsa或DN4過大時，則將可能使得研Dn4 'is preferably between 5 300 tera, ^, A, 3, and 3, and more preferably between 5 and 200 nm, and most preferably between 5-1 and 50 nm. When the silicon dioxide is fumigated silicon, the colloidal stone stone (the average particle size of the stone stone in the surface area of the foot) is judged by the enamel. Fortunately, it is better at 10-3 00 nm. Preferably between 10-20 nanometers, and most preferably between 10-120 nanometers. And this loam stone (average particle size dN4, preferably Between 3G. Said nano, more preferably between you _ nano, and most preferably between 50-300 nano. The average particle size of colloidal stone eve, or DN4 or the average particle of burned stone eve If the diameter Dsa or Ν4 is too small, the material removal rate may not be sufficiently high. When the average particle diameter of colloidal diamond ~ or the average particle diameter of S fumed silica Dsa or DN4 is too large, it may make research

2188 — 6693-P 8 200530380 皮璃基底之表面粗糖度過大，或於研磨後玻璃基底表面產生刮傷。於研磨組成物中之二氧化矽含量較佳地介於 /Hmass/。）’更佳地介於i_4〇%(mass%)，而最佳地介於 />(mass/0)〇 & 一氧化石夕的含量低於0.1 % (mass%)時，將要法得到足夠高之材料移除率，或者於研磨玻璃基板將遭遇車义同足研磨抵抗。當二氧化矽含量高於50%(mass%)時，研磨組成物（黏度將大幅地增加，使得研磨組成物傾向於凝結，因而降低了研磨組成物中之掌控度。另外’驗性化合物可作爲研磨加速劑之用，並藉由二氧化石夕的應用而可加速機械研磨。鹼性化合物可加速機械研磨之推論理由之一爲，鹼性化合物可活化二氧化矽表面，進而增加了二氧化梦之機械研磨力。此外，鹼性化合物亦侵蝕或触刻了玻璃基板表面，以作爲化學研磨玻璃基板表面之其他作用。相較於二氧化矽之機械研磨，鹼性化合物之化學機械研磨反應相對較弱。驗性化合物可爲驗金族鹽類（alkaHmetai salt)、驗土族鹽類（alkaline earth metal sait)或擇自碳酸、磷酸、焦磷酸、檸樣酉艾（citric acid)、葡萄糖酸（giuc〇nic acid)、琥 j白酸（succinic acid)醋叙、草阪（oxalic acid)、酒石酸（tartaric acid)、山梨酉父（sorbic acid)與硝酸等酸之一之銨鹽（anim〇nium salt)。或者’驗性化合物可爲草酸鐵（ferricyanide)、氟化物2188 — 6693-P 8 200530380 Excessive coarse sugar on the surface of the glass substrate, or scratches on the surface of the glass substrate after grinding. The content of silicon dioxide in the abrasive composition is preferably between / Hmass /. ) 'Is more preferably between i_40% (mass%), and most preferably between / > (mass / 0) 〇 & the content of oxidized stone is less than 0.1% (mass%). To obtain a sufficiently high material removal rate, or to grind the glass substrate will encounter the same car resistance as grinding resistance. When the silicon dioxide content is higher than 50% (mass%), the abrasive composition (viscosity will increase greatly, making the abrasive composition tend to condense, thereby reducing the control of the abrasive composition. In addition, Used as a grinding accelerator, and can accelerate mechanical grinding through the application of stone dioxide. One of the inferred reasons that basic compounds can accelerate mechanical grinding is that basic compounds can activate the surface of silicon dioxide, which increases the The mechanical grinding force of the oxidized dream. In addition, the basic compound also erodes or etches the surface of the glass substrate for other functions of chemically polishing the surface of the glass substrate. Compared to the mechanical polishing of silicon dioxide, the chemical mechanical polishing of the basic compound The reaction is relatively weak. The test compounds can be alkaHmetai salt, alkaline earth metal sait, or selected from carbonic acid, phosphoric acid, pyrophosphate, citric acid, glucose Acid (giuconic acid), succinic acid, vinegar acid, oxalic acid, tartaric acid, sorbic aci d) an ammonium salt with one of the acids such as nitric acid, or the test compound may be ferricyanide, fluoride

2188-6693-P 9 200530380 (fluoride)、或擇自於鹼金族金属氧化物之一氫氧化物。或者，、鹼土族金屬、以及銨之氫化物。鹼性化合物中士 ^性化合物可爲四級銨之氫氧合物中之驗土族金屬可㈣二屬可騎、鐘或鋼。驗性化族金屬鹽類、驗金族金屬、、上述材料中，較佳地爲驗土焦磷酸之—之録鹽，藉以二广：擇自於碳酸、磷酸、以及于丨〗較高之物料移除率。其中，驗性化合物可包括碳酸錄 ^ 酸氫銨、碳酸缺m f、錢鈉、碳馱虱鈉、磷酸銨、磷酸鉀、磷酸鈉、如磷酸氫二銨之磷酸氫銨女如磷酸氫二鉀之磷酸氫鉀、如磷乳化鉀、氫氧化錄、以及四甲基氫氧化銨（tmah)。於上述材料中’較佳材料爲碳酸銨、碳酸鉀、碳酸鈉、碳酸氫銨、磷酸銨、磷酸鈉、磷酸氫銨、磷酸氫鉀以及磷酸氫鈉，藉以知到較爲改善之物料移除率。於研磨組成物中可包括一或多種驗性化合物。酸氯二鋼之嶙酸氫納、㈣酸鉀、㈣酸_、擰檬酸鉀、如 :檬酸二氫卸之擰檬酸氫绅、葡萄酸却、琥峨、酷酸録、草酸鉀、草酸氫鍵、酒石酸鍵、酒石酸卸、酒石酸氫銨、山梨酸卸、硝_、鐵氫化卸、氰化鍵、氨㈣、氰㈣、氫於研磨組成物中之鹼性化合物含量介於〇*〇5-l〇%(mass%)，較佳地介於 0.1-8%(mass°/〇)，而最佳地介於0.3-5%(mass%)。當鹼性化合物含量低於〇.〇5%(mass%) 時，由於鹼性化合物不足以加速二氧化矽之機械研磨效果，2188-6693-P 9 200530380 (fluoride), or a hydroxide selected from alkali metal oxides. Alternatively, alkaline earth metals, and ammonium hydrides. The basic compounds in the basic compounds can be the quaternary ammonium compounds in the quaternary ammonium hydroxide, which can be two kinds of riding, bell or steel. Among the test chemical metal salts, metal test metals, and the above materials, the test salt of the pyrophosphate is preferably used, so that it can be selected from carbonic acid, phosphoric acid, and Material removal rate. Among them, the test compounds may include ammonium bicarbonate, mf carbonate, sodium bicarbonate, sodium carbohydrate, ammonium phosphate, potassium phosphate, sodium phosphate, ammonium hydrogen phosphate such as diammonium phosphate, and dipotassium hydrogen phosphate. Potassium hydrogen phosphate, such as phosphate emulsified potassium, hydroxide, and tetramethylammonium hydroxide (tmah). Among the above materials, the preferred materials are ammonium carbonate, potassium carbonate, sodium carbonate, ammonium bicarbonate, ammonium phosphate, sodium phosphate, ammonium hydrogen phosphate, potassium hydrogen phosphate, and sodium hydrogen phosphate, so that more improved material removal is known. rate. One or more test compounds may be included in the abrasive composition. Sodium hydrogen citrate, potassium citrate, potassium citrate, potassium citrate, such as: citric acid, hydrogen citrate, grape acid, succinyl, citric acid, potassium oxalate , Hydrogen oxalate bond, tartaric acid bond, tartaric acid bond, ammonium hydrogen tartrate, sorbic acid bond, nitrate, iron hydrogen bond, cyanide bond, ammonia, cyanide, and hydrogen. * 〇5-10% (mass%), preferably between 0.1-8% (mass ° / 〇), and most preferably between 0.3-5% (mass%). When the content of basic compounds is less than 0.05% (mass%), since the basic compounds are not enough to accelerate the mechanical grinding effect of silicon dioxide,

2188-6693-P 200530380 故有可能無法得到足於 l〇%(mass%)時，得研磨組成物傾向凝粗糙度的增加。夠之物料移除率。當鹼性化合物含量高研磨組成物之黏度大幅地增加，因而使〜，進而使得後續研磨後破璃基板上之於研磨組成物中，水作爲溶解與分散原料其他之用。水較佳地包含儘量少之雜質以避免抑制其他原料之作用。特别地’較佳地使用藉由移除雜f離子㈣離子交換樹脂與接著經由過濾器過滹污染私、Μ、Μ , < “ /了本物過 < 純水或超純水，或蒸餾水。於研磨組成物中初〒了更包括乳化劑。氧化劑作爲藉由氧化玻璃基板表面方或品+、土 ^ 万式而加速二虱化矽機械研磨之研磨加速劑。氧化劑可爲過氣仆士：六$ Μ，乳化風义水,合履（31 mass %)，或爲如鉀鹽與鋼鹽之驗金族令gg # 4' ά' ^ ^ 择至屬鹽類，或爲擇自過硫酸（persulfruic acid)、過破酸乳酸（Chl〇ric acid)、過氯酸（perchloric acid) (penodic acid)與溴酸（br〇mic acid)等酸之一之銨鹽。例如，乳化劑可能包括過氧化氫、過硫酸銨、氯酸鉀、過氯酸鉀、過氯酸鈉、過碘酸鉀、過碘酸鈉、溴酸鉀以及溴酸鈉。於此些材料中，較佳地爲過氧化&，以大幅改善二氧化矽之機械研磨。於研磨組成物中可包括一或多種氧化劑。於研磨組成物中之氧化劑含量介於〇〇〇5_1〇%(mass%)，較佳地介於0.01-8%(masS%)，而最佳地介於〇,〇3-5%(mass%)。當氧化劑含量低於〇〇〇5%(inass〇/0)時，由於氧化劑不足以加速二氧化矽之機械研磨效果，故有可能無 2188-6693-P 11 200530380 法得到足夠之物料移除率。當氧化劑含量高^ iq%(簡s%) 時二研磨組成物之黏度大幅地增加，因而使得研磨組成物傾向规結’進而使得後續研磨後玻璃基板上之粗糙度的增加。依據實際需要，研磨组成物可更包括蜇合劑叫 ageiU)、表面活性劑、防腐劑或類似物。研磨組成㈣藉由將水之外原料與水混合而成。於混合過程中’可以使用刀片型之挽拌器或超音波分散器。水以外原料與水混合之順序則並不限定。广據本發明實施例之研磨組成物加水稀釋或沒有經過加 ^釋。當研磨组成物經加水稀釋時，稀釋比（體積比後佳 :不大於50倍，更佳地不大…，而最佳地不大於10 ° °當稀釋倍率超過5G倍，於稀釋後研磨組成物中之二氧化石夕與酸之含量可能職’因而造成不足之材料移除率。精由包含粗磨步驟與細磨步驟之兩步驟研 ::板之情形如下所述。首先，於粗磨步驟中，玻璃基底表步：权略:藉由包含氧化飾之研磨衆研磨。接著，於□磨、“，猎由依據本發明之研磨組成物研磨玻璃基底表面。 =步驟中，玻璃基底係依附於一研磨頭，此研磨頭持續 ^位於一固定壓力下之轉盤上_研麼執、盤旋轉時，讲、士研磨墊’备研磨頭與轉、，研磨組成物則持續供應至研磨墊表面。於，得注意的，玻璃基板採用依據本發：之研磨組成物， H·㈣磨程序下研磨’進而取代-多重階段研磨程 2l88-6693-p 12 200530380 序。本發明具有以下優點。依據本實施例之研磨組成物包含二氧化矽之研磨料。相較於含氧化鈽之研磨物之研磨組成物，如此可降低研磨後玻璃基板之表面粗糙度。據推論，如此之表現係由於氧化鈽之主要粒子具有不規則形狀，而二氧切之爲—球狀粒子。由於主要形狀爲球狀，二氧化梦更較氧化鈽適用於精細地研磨玻璃基板表面，以降低研磨後玻璃基板之表面粗糙度。此外，對於玻璃基板材料，二氧切具有相較於氧化飾爲低之反應性。基於此原因，黏附於破璃基板上之二氧化石夕可輊易地猎由清洗玻璃基板而移除’而不會與破璃基板之材料反應而黏附於玻璃基板表面。因此依據本實施例之研磨組成物具有可輕易由研磨表面清除之特性。、此外，彳目較於氧㈣，於研磨組成物中二氧切具有對万；車乂大dn聚力與高分散性（請參照稍後之範例與比較例4與5)。因此，依據本實施例之研：良好分散性之黏著劑。，、有 :研磨組成物中驗性化合物之化學研磨作用，可加速使用二氧化矽對於# _並^ + π 之機械研磨。藉由如此鹼性化口用’可改善研磨組成物研磨玻璃基板表面之能力， γ。材料#除率。値得注意的，當驗性化合物藉由活化二乳化石夕表面與ϋ刻破璃基板表面等方式改善於材料移除 2188-6693-p 13 200530380 率，其並非視作爲氧化破璃基板表面並使之脆化。接著，於下文中將詳細敘述本發明之範例與比較例。於範例1_29中，藉由水混合研磨料與鹼性化合物，且稍後視貫際需求而更加入氧化劑，進而製備出研磨組成物之儲存液。於比㈣W t，則藉由水混合研磨料且稍後視實際需求而更加入氧化劑，進而製備出研磨組成物之儲存液。所使用〈研磨料、驗性化合物與氧化劑之種類如表1所示。、接著利用超純水稀釋依據範例1-29與比較例“5之各儲存液’以使得其最終體積較初始體積增大1〇倍，進而製備出研磨組成物。採用依據範例…與比較例“5之各研磨組成物於如下所述研磨條件下研磨不同之破璃基板表面。在 ^於研磨前後量測各玻璃基板之質量，接著藉由下述公式计舁材料移除率。基於所得 m 心収材料移料，各研磨組成物 Μ疋爲四個等級：⑴極佳；⑺良好；（3)稍差；⑷不良。特别地，當研磨組成物^爲㈣時，騎科。，。5微米/每分鐘；當材料移除率低於〇〇5 “ 低於0.03微米/每分鐘時，刀里不則，平疋爲良好；當衬料移除於〇·〇3微米/每分鐘而不低於〇 _ W不/母分鐘時，並爲稍差；當材料移除率低於0· 極差。上料定結果請參03表中卜將評定爲中所示。表—中標題爲”物料移除率，，之攔 2188-6693-Ρ 200530380 研磨條件：研黡裝置：單面研磨機15，，9(三片/每盤），由Engis公司 (曰本）所製造。研磨材料爲··採用含氧化卸之研磨漿所粗磨強化玻璃表面所彳于到之2·5吋（外徑之破璃基板，其具有 Ra = 0.8奈米之表面粗糙度。研厝墊：絨面研磨墊，，BelatixN〇〇58，，，由佳麗寶（kaneb〇) 公司製造。研磨壓力：100克/平方公分（=98KPa)。轉檯旋轉速度：102rpm; 研磨組成物供應速率：50毫升/每分鐘；研磨時間：20分鐘。計算公式：材料移除率（奈米/每分鐘）=於研磨前後之玻璃基板質量差（公克）/[30·02625平方公分*2 52(公克/每平方公分）]* 1 00 00(μπι/公分）/研磨時間（分鐘）。研磨後之玻璃基板接著刷洗3〇秒以及超音波清洗45 秒，並接著旋轉乾㉟18〇秒。此後，接著利用由 Instruments Inc·製造之原子力顯微鏡”Nan〇Sc〇pe nia Dimension 3000”（掃描區域：1〇μηι*1〇μπι，掃描速率：ι.〇Ηζ，取樣行數：256條）觀察坡璃基板之表面狀況。基於觀察到之2188-6693-P 200530380 Therefore, when the content is less than 10% (mass%), the obtained abrasive composition tends to increase in roughness. Sufficient material removal rate. When the content of the basic compound is high, the viscosity of the polishing composition is greatly increased, so that ~, and then the subsequent polishing of the glass substrate on the glass substrate in the polishing composition, water is used as a raw material for dissolution and dispersion. Water preferably contains as few impurities as possible to avoid inhibiting the effects of other raw materials. In particular, it is preferably used to remove contaminated ions, ion exchange resins, and then contaminate the private, M, and M through a filter, < < this product through < pure or ultrapure water, or distilled water An emulsifier is included in the polishing composition. The oxidant is used as a polishing accelerator that accelerates the mechanical polishing of the silicon dioxide by oxidizing the surface of the glass substrate. Taxi: Six $ Μ, emulsified Fengyishui, Helu (31 mass%), or gold test clan such as potassium salt and steel salt gg # 4 'ά' ^ ^ Choose from salt, or choose from An ammonium salt of one of the acids, such as persulfruic acid, perchloric acid, perchloric acid (penodic acid), and bromic acid. For example, emulsifiers May include hydrogen peroxide, ammonium persulfate, potassium chlorate, potassium perchlorate, sodium perchlorate, potassium periodate, sodium periodate, potassium bromate, and sodium bromide. Among these materials, peroxide & To greatly improve the mechanical grinding of silicon dioxide. One or more kinds of oxygen may be included in the grinding composition The content of the oxidant in the grinding composition is between 0.0005 and 10% (mass%), preferably between 0.01-8% (masS%), and most preferably between 0.005% and 5%. (mass%). When the oxidant content is less than 0.005% (inass0 / 0), because the oxidant is not enough to accelerate the mechanical grinding effect of silicon dioxide, it may not be sufficient without the 2188-6693-P 11 200530380 method. The material removal rate. When the oxidant content is high ^ iq% (simplified s%), the viscosity of the second grinding composition is greatly increased, so that the grinding composition tends to be compacted, and thus the roughness of the glass substrate after subsequent grinding is increased. Increase. According to actual needs, the grinding composition may further include a coupler called agei), a surfactant, a preservative, or the like. The grinding composition is made by mixing raw materials other than water with water. During the mixing process, it may be A blade-type stirrer or an ultrasonic disperser is used. The order of mixing raw materials other than water with water is not limited. The grinding composition according to the embodiment of the present invention is diluted with water or not added. When the grinding composition is When diluted with water, the dilution ratio (better volume ratio: More than 50 times, more preferably not much, and most preferably not more than 10 ° ° When the dilution rate exceeds 5G times, the content of the dioxide and the acid in the grinding composition after dilution may be insufficient, thus causing insufficient Material removal rate. The two-step process including the rough grinding step and the fine grinding step is studied as follows: First, in the rough grinding step, the glass substrate surface step: the strategy: by including the oxide decoration Grinding. Grinding. Next, grinding the glass substrate surface with the grinding composition according to the present invention. = In the step, the glass substrate is attached to a polishing head. This polishing head is continuously located on a turntable under a fixed pressure. The material is continuously supplied to the surface of the polishing pad. Therefore, it should be noted that the glass substrate adopts the polishing composition according to the present invention: grinding under H · honing procedure 'and then replaces-multi-stage polishing process 2l88-6693-p 12 200530380 sequence. The present invention has the following advantages. The polishing composition according to this embodiment includes an abrasive of silicon dioxide. Compared with the abrasive composition of abrasives containing hafnium oxide, this can reduce the surface roughness of the glass substrate after grinding. It is inferred that such a performance is due to the irregular shape of the main particles of hafnium oxide, and the dioxin is a spherical particle. Because the main shape is spherical, the dream dioxide is more suitable for polishing the surface of glass substrates than osmium oxide to reduce the surface roughness of the glass substrate after polishing. In addition, for glass substrate materials, dioxane has a lower reactivity compared to oxidized trim. For this reason, the stone dioxide adhered to the broken glass substrate can be easily removed by cleaning the glass substrate 'without sticking to the surface of the glass substrate by reacting with the material of the broken glass substrate. Therefore, the abrasive composition according to this embodiment has a characteristic that it can be easily removed from the abrasive surface. In addition, compared with oxygen, the dioxane has an anti-cutting effect in the grinding composition; the car has large dn cohesion and high dispersibility (please refer to the later examples and comparisons 4 and 5). Therefore, according to the research of this embodiment: a good dispersive adhesive. The chemical grinding effect of the test compounds in the grinding composition can accelerate the mechanical grinding of # _ and ^ + π using silicon dioxide. By such an alkalinization, the ability of the polishing composition to polish the surface of a glass substrate, γ, can be improved. Material # divide rate. It should be noted that when the test compound improves the material removal rate by activating the surface of the di-emulsified stone and engraving the surface of the glass-breaking substrate, it is not considered as the surface of the glass-breaking substrate. Make it brittle. Next, examples and comparative examples of the present invention will be described in detail below. In Example 1-29, the abrasive was mixed with basic compounds with water, and an oxidizing agent was further added later according to the general needs, thereby preparing a storage solution of the abrasive composition. In the ratio ㈣W t, a storage solution of the grinding composition is prepared by mixing the abrasive with water and adding an oxidant later according to actual needs. The types of abrasives, test compounds and oxidants used are shown in Table 1. Then, the ultra-pure water is used to dilute each storage solution according to Examples 1-29 and Comparative Example "5" so that its final volume is increased by 10 times compared to the initial volume, thereby preparing a grinding composition. According to the examples ... and comparative examples Each of the polishing compositions of "5" polished different glass substrate surfaces under the polishing conditions described below. The mass of each glass substrate was measured before and after grinding, and then the material removal rate was calculated by the following formula. Based on the obtained m core-receiving material transfer, each grinding composition M 疋 has four grades: ⑴ is very good; ⑺ is good; (3) is slightly worse; ⑷ is not good. In particular, when the grinding composition ^ is 骑, Riding Branch. . 5 micrometers per minute; when the material removal rate is lower than 0.05 "below 0.03 micrometers per minute, there are irregularities in the knife, and the flatness is good; when the lining is removed at 0.03 micrometers per minute When it is not less than 0 W / m / min, and it is slightly worse; when the material removal rate is less than 0, extremely poor. For the results of the feed setting, please refer to Table 03 and the rating will be shown in the table. The material removal rate is 2188-6693-P 200530380. Grinding conditions: Grinding device: Single-side grinder 15, 9, 9 (three pieces per disc), manufactured by Engis (Japan). Abrasive material is: ······················································· The surface of the reinforced glass substrate roughened by the abrasive slurry containing oxidized unloading shall be 2.5 inches (outer diameter glass substrate with Ra = 0.8 nm surface roughness. : Suede polishing pad, Belatix No. 58, manufactured by Kanebo. Grinding pressure: 100 g / cm2 (= 98KPa). Rotary speed of rotation: 102 rpm; Supply rate of polishing composition: 50 Milliliter / minute; Grinding time: 20 minutes. Calculation formula: Material removal rate (nano / per minute) = Quality difference of glass substrate before and after grinding (g) / [30 · 02625 cm2 * 2 52 (g / Per square centimeter]] * 1 00 00 (μπι / cm) / grinding time (minutes). The polished glass substrate is then brushed for 30 seconds and ultrasonically cleaned for 45 seconds, and then spin-dried for 180 seconds. After that, it is used Atomic force microscope "NanoScopenia Dimension 3000" manufactured by Instruments Inc. (scanning area: 10μηι * 10μm, scanning rate: ι.〇Ηζ, number of sampling lines: 256) Surface condition. Based on observation It

2188-6693-P 15 200530380 於玻璃基底 % 口 1曆砠成物評定爲㈡個等級，⑴極佳、（2)良好；（3)稍差；與⑷極差。特别地，當所觀察到之黏附物數量爲零時，研磨組成物將評定爲極佳爲磨時爲 ;當所觀察到之黏附物數量少良好，當所觀祭到之黏附物數組成物則評定爲稍差；當所觀，研磨組成物將評定爲極差。 ”清洗容易度”之攔位中所顯示於3時，研磨組成物則評定里少於5但不少於3時，研察到之黏附物數量不少於5 此些坪定結果如表一内標題玻璃基板之表面粗糙度Ra於旋轉乾燥後係藉由原子力顯微鏡”NanoScope ma Dimensi〇n 3〇〇〇，，（掃描區域：10陣*10叫’掃描速率：1烏，取樣行數：256條；離線滤鏡·· fla_ aut0 〇rder_2)所量侧。基於所量測到之玻璃基板之表面粗糙度Ra，各研磨組成物將評定爲以下四個等級 ⑴極佳、（2)艮好；（3)稍差；與（4)極差。特别地，當表面粗心度Ra少;^ 〇.2奈米時，研磨組成物將評定爲極佳；當表面 t趟度Ra )於0.25奈米而不少於〇 2奈米時，研磨組成物卞平夂爲良好’畜表面粗糙度少於奈米而不少於0.25奈米時，研磨組成物將評定爲稍差；當表面粗糙度不少於〇·3 奈米時，研磨組成物將評定爲極差。此些評定結果如表一内標題爲，，表面粗糙度，，之攔位中所顯示。將範例 1 -29 Α μ* ‘ Μ , ，、比較乾例1 -5之研磨組成物放置於内徑爲 2.5公分之比色試其说吕（c〇l〇rimetric tube)中，且將之靜置 1小2188-6693-P 15 200530380 On glass substrate% Mouth 1 calendar is rated as 等级 grade, excellent ⑴, (2) good; (3) slightly worse; very poor. In particular, when the number of adherents observed is zero, the abrasive composition will be evaluated as excellent when it is milled; when the number of adherents observed is small and good, when the number of observed adherents is composition It is rated as slightly worse; when viewed, the abrasive composition is rated as very poor. The "easy to clean" block is displayed at 3 o'clock, and the abrasive composition is rated at less than 5 but not less than 3, and the number of stickies observed is not less than 5. These results are shown in Table 1. The surface roughness Ra of the inner title glass substrate was spin-dried by an atomic force microscope "NanoScope ma Dimensión 300", (scanning area: 10 arrays * 10 called 'scanning rate: 1 U, sampling lines: 256; off-line filters ·· fla_ aut0 〇rder_2) measured side. Based on the measured surface roughness Ra of the glass substrate, each abrasive composition will be evaluated as the following four grades: Excellent, (2) Gen Good; (3) Slightly worse; and (4) Very poor. In particular, when the surface roughness Ra is small; ^ 0.2 nanometers, the polishing composition will be evaluated as excellent; when the surface t-degree Ra) is less than When 0.25 nm but not less than 0 2 nm, the polishing composition is good. When the surface roughness of the animal is less than nanometer and not less than 0.25 nm, the polishing composition will be evaluated as slightly worse. When it is not less than 0.3 nanometers, the grinding composition will be evaluated as extremely poor. The results of these evaluations are shown in Table 1. Title, Surface roughness, as shown in the stop. Place the abrasive composition of Examples 1 -29 Α μ * 'M,, and Comparative Dry Example 1-5 in a colorimetric test with an inner diameter of 2.5 cm. It is said to be in (luminous tube) and left to stand for 1 hour

2188-6693-P 16 200530380 時。然後，量测各比色試管中之研磨組成物之沉澱物高度。基於所量测之沉澱物尚度，各研磨組成物將評定爲四個等級 ⑴極佳、⑺良好·’（3)稍差；與⑷極差。特别地，當沉澱物之高度低於1公分時，研磨組成物將評定爲極佳；當沉澱物之高度低於2 m不低於！公分時，研磨組成物將評定爲良好；當沉澱物之高度低於3公分而不低於2公分時，研磨組成物將評定爲稍差；以及當沉澱物之高度不低於3公分時，研磨組成物將評定爲極差。此些評定結果將如表一内標題爲”分散性”之攔位中所顯示。基於前述評定四㈣目：材料移”、清洗容易度、表面粗糙度、以及分散性久各研厝組成物分别地評定爲（1)極佳、（2)良好；（3)稍差；以及 .^ v , 杠差，並將分别地與以評分爲5分、3分、1分與〇分刀，且计异各研曆組成物所得總分。 ®總分爲20分時，研廢έ 士研磨組成物將評定爲極佳；當總分介於 1 6-1 9分時，研磨組成物、浙呼疋爲良好；當總分介於10_15 分時，研磨組成物將評、十疋爲稍差，·而當總分爲低於9分時，研磨組成物將評定爲炻# 、、十疋爲極差。此些評定結果將如表—中之，τ 合评足之攔位所顯示。 …2188-6693-P 16 200530380 hours. Then, the height of the precipitate of the abrasive composition in each colorimetric test tube was measured. Based on the measured precipitation level, each grinding composition will be rated as four grades: ⑴Excellent, ⑺Good · '(3); slightly worse than ⑷. In particular, when the height of the precipitate is less than 1 cm, the grinding composition will be evaluated as excellent; when the height of the precipitate is less than 2 m, it will not be lower! When the height of the sediment is less than 3 cm and not less than 2 cm, the grinding composition will be evaluated as good; when the height of the sediment is less than 3 cm, and when the height of the sediment is not less than 3 cm, The abrasive composition was rated as extremely poor. The results of these assessments will be shown in the block entitled “Scattered” in Table 1. Based on the foregoing evaluation of four items: material transfer, ease of cleaning, surface roughness, and dispersibility, each of the research compositions was evaluated as (1) excellent, (2) good; (3) slightly worse; and . ^ v, the difference, and the score will be divided into 5 points, 3 points, 1 point, and 0 points, and the total score obtained from each academic composition will be calculated. ® When the total score is 20 points, the test will be scrapped. The grind composition will be evaluated as excellent; when the total score is between 16 and 9 points, the grind composition and Zhehuo are good; when the total score is between 10 and 15 points, the grind composition will be evaluated as ten疋 is slightly worse, and when the total score is less than 9 points, the grinding composition will be evaluated as 炻 #, 、, and 10 疋 as extremely poor. The results of these evaluations will be as shown in the table—in the case of τ, which is sufficient for evaluation. Displayed ...

2188-6693-P 17 200530380 表一研磨料 (mass%) 研磨加速劑 (mass %) 氧化劑 (mass %) 物料移除率清除容易度表面粗糙度分散性综合評定範例1 膠態矽 *] 25% 碳酸鉀2% 過氧化氯 2% 1 1 1 1 1 範例2 膠態矽 25% 碳酸鉀5% 過氧化氫 2% 1 1 1 1 1 範例3 膠態矽 25% 碳酸鉀 0.2% 過氧化氫 2% 3 1 1 1 2 範例4 膠態矽 *丨 25% 碳酸鉀 0.01% 過氧化氫 2% 2 1 1 1 2 範例5 膠態矽 5% 碳酸鉀2% 過氧化氫 2% 3 1 1 1 2 範例6 膠態矽 10% 碳酸鉀2% 過氧化氫 2% 2 1 1 1 2 範例7 膠態矽 40% 碳酸鉀2% 過氧化氫 2% 1 1 1 1 1 範例8 膠態矽 25% 碳酸鉀2% - 2 1 1 1 2 範例9 膠態矽 25% 碳酸鉀2% 過氧化氫 0.01% 2 1 1 1 2 範例10 膠態矽 25% 碳酸鉀2% 過氧化氫 2% 1 1 1 1 1 範例11 膠態矽 25% 碳酸鉀2% 過氧化氫 2% 1 1 3 1 2 範例12 膠態矽 25% 磷酸氫二銅 2% 過氧化氫 2% 1 1 1 1 1 範例13 膠態矽 25% 嶙酸三鋼 2% 過氧化氫 2% 1 1 1 1 1 範例14 膠態矽 25% 碳酸氫鉀 2% 過氧化氫 2% 1 1 1 1 1 範例15 膠態矽 25% 氫氧化鉀 1% 過氧化氫 2% 2 1 1 1 2 範例16 膠態矽 25% 酒石酸鉀鈉 2% 過氧化氫 2% 2 1 1 1 2 範例17 膠態矽 +1 25% 璘酸三鋼 2% 過氧化氫 2% 2 1 1 1 2 範例18 膠態矽 25% 重磷酸鉀 2% 過氧化氫 2% 2 1 1 1 2 範例19 膠態矽 +1 25% 摔樣酸三钾 2% 過氧化氫 2% 2 1 1 1 2 範例20 膠態矽 1 25% 氫氧化鋰 2% 過氧化氫 2% 2 1 1 1 2 2188-6693-P 18 200530380 研磨料 (mass%) 研磨加速劑 (mass %) 氧化劑 (mass %) 物料移除率清除容易度表面粗糙度分散性综合評定範例21 膠態矽 ~ 25% 氫氧化鈉 2% 過氧化氫 2% 2 1 1 1 2 範例22 膠態矽 *丨 25% 氫氧化銨 2% 過氧化氯 2% 3 1 1 1 2 範例23 膠態矽 *丨 25% TMAH 2% 過氧化氫 2% 3 1 1 1 2 範例24 膠態矽 25% 硝酸鈣2% 過氧化氫 2% 3 1 1 1 2 範例25 膠態矽 25% 碳酸鉀2% 過氧化氫 2% 2 1 1 1 2 範例26 膠態矽 25% 碳酸鉀2% 過氧化氯 2% 2 1 1 1 2 範例27 膠態矽 25% 碳酸鉀2% 過氧化氫 2% 2 1 1 1 2 範例28 膠態矽 *225°/〇碳酸鉀2% 過氧化氫 2% 2 1 1 1 2 範例29 燻矽= 25% 碳酸鉀2% 過氧化氫 2% 1 1 3 1 2 比較例 1 膠態矽 25% - - 4 1 1 1 3 比較例 2 膠態矽 25% - 過氧化氫 2% 4 1 1 1 3 比較例 3 燻矽 25% - - 2 1 3 1 3 比較例 4 氧化鈽 25% - - 1 4 4 4 4 比較例 5 氧化鐵 25% - - 2 3 3 4 42188-6693-P 17 200530380 Table 1 Abrasives (mass%) Grinding Accelerator (mass%) Oxidant (mass%) Material Removal Ease of Removal Ease of Comprehensive Evaluation of Surface Roughness Dispersibility Example 1 Colloidal Silicon *] 25% Potassium carbonate 2% Chlorine peroxide 2% 1 1 1 1 1 Example 2 Colloidal silicon 25% Potassium carbonate 5% Hydrogen peroxide 2% 1 1 1 1 1 Example 3 Colloidal silicon 25% Potassium carbonate 0.2% Hydrogen peroxide 2 % 3 1 1 1 2 Example 4 Colloidal silicon * 25% potassium carbonate 0.01% hydrogen peroxide 2% 2 1 1 1 2 Example 5 Colloidal silicon 5% potassium carbonate 2% hydrogen peroxide 2% 3 1 1 1 2 Example 6 Colloidal silicon 10% potassium carbonate 2% hydrogen peroxide 2% 2 1 1 1 2 Example 7 Colloidal silicon 40% potassium carbonate 2% hydrogen peroxide 2% 1 1 1 1 1 Example 8 Colloidal silicon 25% carbonic acid Potassium 2%-2 1 1 1 2 Example 9 Colloidal silicon 25% Potassium carbonate 2% Hydrogen peroxide 0.01% 2 1 1 1 2 Example 10 Colloidal silicon 25% Potassium carbonate 2% Hydrogen peroxide 2% 1 1 1 1 1 Example 11 Colloidal silicon 25% potassium carbonate 2% hydrogen peroxide 2% 1 1 3 1 2 Example 12 Colloidal silicon 25% copper dihydrogen phosphate 2% hydrogen peroxide 2% 1 1 1 1 1 Example 13 Colloidal silicon 25% triacetate 2% hydrogen peroxide 2% 1 1 1 1 1 Example 14 Colloidal silicon 25% potassium bicarbonate 2% hydrogen peroxide 2% 1 1 1 1 1 Example 15 Colloidal silicon 25% potassium hydroxide 1% Hydrogen peroxide 2% 2 1 1 1 2 Example 16 Colloidal silicon 25% sodium potassium tartrate 2 % Hydrogen Peroxide 2% 2 1 1 1 2 Example 17 Colloidal Silicon +1 25% Peroxo Steel 2% Hydrogen Peroxide 2% 2 1 1 1 2 Example 18 Colloidal Silicon 25% Potassium Phosphate 2% Peroxide Hydrogen 2% 2 1 1 1 2 Example 19 Colloidal silicon +1 25% Tripotassium tripotassium 2% hydrogen peroxide 2% 2 1 1 1 2 Example 20 Colloidal silicon 1 25% lithium hydroxide 2% hydrogen peroxide 2% 2 1 1 1 2 2188-6693-P 18 200530380 Abrasive (mass%) Grinding accelerator (mass%) Oxidant (mass%) Material removal rate Ease of removal Clearness of surface roughness Dispersibility Comprehensive evaluation example 21 Colloidal state Silicon ~ 25% Sodium hydroxide 2% Hydrogen peroxide 2% 2 1 1 1 2 Example 22 Colloidal silicon * 丨 25% Ammonium hydroxide 2% Chlorine peroxide 2% 3 1 1 1 2 Example 23 Colloidal silicon * 丨25% TMAH 2% hydrogen peroxide 2% 3 1 1 1 2 Example 24 Colloidal silicon 25% Calcium nitrate 2% Hydrogen peroxide 2% 3 1 1 1 2 Example 25 Colloidal silicon 25% Potassium carbonate 2% Hydrogen peroxide 2% 2 1 1 1 2 Example 26 Colloidal silicon 25% potassium carbonate 2% chlorine peroxide 2% 2 1 1 1 2 Example 27 Colloidal Silicon 25% Potassium Carbonate 2% Hydrogen Peroxide 2% 2 1 1 1 2 Example 28 Colloidal Silicon * 225 ° / 〇 Potassium Carbonate 2% Hydrogen Peroxide 2% 2 1 1 1 2 Example 29 Silicon fume = 25% potassium carbonate 2% hydrogen peroxide 2% 1 1 3 1 2 Comparative Example 1 Colloidal Silicon 25%--4 1 1 1 3 Comparative Example 2 Colloidal Silicon 25%-Hydrogen Peroxide 2% 4 1 1 1 3 Comparative example 3 Fumed silica 25%--2 1 3 1 3 Comparative example 4 Hafnium oxide 25%--1 4 4 4 4 Comparative example 5 Iron oxide 25%--2 3 3 4 4

表一攔位中之縮寫代表： “膠態矽~”爲具有平均粒徑DSA爲80奈米與平均粒徑 Dn4爲80奈米之膠態梦； “膠態矽％’爲具有平均粒徑DSA爲20奈米與平均粒徑 Dn4爲40奈米之膠態發； “燻矽+1”爲具有平均粒徑Dsa爲30奈米與平均粒徑DN4 2188-6693-P 19 200530380 爲170奈米之燻石夕；The abbreviations in the table 1 represent: "colloidal silicon ~" is a colloidal dream with an average particle size DSA of 80 nm and an average particle size Dn4 of 80 nm; "colloidal silicon% 'is an average particle size DSA is colloidal hair with 20 nm and average particle diameter Dn4 is 40 nm; "Smoked Silicon +1" is 30 nm with average particle diameter Dsa and average diameter DN4 2188-6693-P 19 200530380 is 170 nm Smoke of stone

奈米與平均粒徑D ，N4 壎石夕爲具有平均粒徑Dsa爲2〇爲140奈米之燻石夕； (Ce203);以及Nanometer and average particle diameter D, N4 vermiculite is a smoked stone having an average particle diameter Dsa of 20 and 140 nanometers; (Ce203); and

氧化鈽”爲具有平均粒徑D 50爲450奈米之氧化鈽 450奈米之氧化鐵 “氧化鐵”爲具有平均粒徑d5g爲 (a-Fe203) 〇氧化鈽與氧化鐵之平均粒徑D5〇係經藉由Beckman C。心 Inc.所製造之Coulter c〇unter “LS_23〇”所量測得到。於表一中”氧化劑’，攔位中，，，過氧化氫，，爲含過氧化氫之水溶液（31mass%)。如表一所示，依據範例K29之各研磨組成物於任何項目中並不至於評定爲極差，且於”综合評定，，中皆評定爲極佳與良好。如此之結果建議了依據範例丨—29之研磨组成物適用於研磨玻璃基板之應用。依據範例丨、5與7之研磨組成物之評定結果，可發現到物料移除率之改善’特别於當二氧化矽含量（研磨料）不少於25%(mass%)時，且較佳地介於 25-40%(mass%)時。依據範例卜4之研磨組成物之結果，可發現到材料移除率之改善’當鹼性化合物含量不少於 2%(mass%)時，且較佳地介於2_5%(mass%)時。依據範例工、 9與1 0之研磨組成物之可發現評定結果中，當設定酸含量不低於2°/〇(mass%),且較佳地介於2_ 1 〇%(mass%)時，可改善物 2188-6693-P 20 200530380 料移除率。雖然本發明已以較佳實施例揭露如上，然並並本發明，任何熟習此技藝者，在不脱離本發明之精夂出 Τ不口範圍内，^可作各種之更動與潤飾，因此本發明之保護範圍當视後附之申請專利範園所界定者爲準。田【圖式簡單説明】無Hafnium oxide is an iron oxide with an average particle diameter D 50 of 450 nanometers. Hafnium oxide with a nanometer diameter of 450 nanometers. "Iron oxide" has an average particle diameter d5g of (a-Fe203). The average particle diameter of hafnium oxide and iron oxide D5. 〇 Measured by Coulter counter "LS_23〇" manufactured by Beckman C. Xin Inc. In Table 1, "oxidant", in the trap, and hydrogen peroxide, contains peroxide. Aqueous solution of hydrogen (31mass%). As shown in Table 1, the grinding compositions according to Example K29 are not rated as extremely poor in any item, and they are rated as excellent and good in the "comprehensive evaluation." Such results suggest a basis for the example 丨The polishing composition of —29 is suitable for the application of polishing glass substrates. According to the evaluation results of the polishing composition of Examples 丨, 5 and 7, the improvement of the material removal rate can be found, especially when the silicon dioxide content (abrasive) When it is not less than 25% (mass%), and preferably between 25-40% (mass%). According to the results of the abrasive composition of Example 4, the improvement of the material removal rate can be found. When the content of the sexual compound is not less than 2% (mass%), and preferably between 2% and 5% (mass%). According to the example, 9 and 10 grinding composition found discoverable evaluation results, when setting the acid When the content is not less than 2 ° / 〇 (mass%), and preferably between 2-10% (mass%), the material removal rate of 2188-6693-P 20 200530380 can be improved. Although the present invention has been compared with The best embodiment is disclosed as above, but it is also the present invention. Anyone skilled in this art will not be stumped without departing from the essence of the present invention. Inner circle, the ^ can make various modifications and variations, and the scope of the invention as defined by the following claims and their equivalents attached to the Park range. Drawings briefly described fields {None

【主要元件符號説明】無[Description of main component symbols] None

2188-6693 212188-6693 21

Claims

200530380 十、申請專利範園： 1. 一種研磨組成物，適用於研磨一破璃基板，包括：二氧化矽；一驗性化合物；以及水0 2·如申請專利範圍第1項所述之研磨組成物，其中該二氧化石夕爲膠態石夕（colloidal silica)、壎石夕（fumed si lie a)或沉殿型矽（precipitated silica)。 3·如申請專利範圍第2項所述之研磨組成物，其中該二氧化矽爲膠態矽。 4·如申請專利範圍第3項所述之研磨組成物，其中該膠態矽具有介於5-300奈米之一平均粒徑DSA，該平均粒徑係藉由比表面積法（BET法）量測該膠態矽之表面區域所得到。 5 ·如申請專利範圍第3項所述之研磨組成物，其中該膠態矽具有介於5-300奈米之一平均粒徑DN4，該平均粒徑係藉由雷射繞射散射法所量測得到。 6 ·如申請專利範圍第2項所述之研磨組成物，其中該壎石夕具有介於10-300奈米之一平均粒徑DsA，，該平均粒徑係藉由比表面積法（BET法）量測該膠態矽之表面區域所得到。 7·如申請專利範圍第2項所述之研磨組成物，其中該燻石夕具有介於30-5 00奈米之一平均粒徑DN4,該平均粒徑係藉由雷射繞射散射法所量測得到。 8 ·如申請專利範圍第1項所述之研磨組成物，其中於該研磨組成物中之該二氧化發之舍量介於〇. 1_5〇%(mass%)。 2188-6693-P 22 200530380 9 ·如申請專利範園第8項所述之研磨組成物，其中於該研磨組成物中之該二氧化發之含量介於3-30 % (mass%)。 I 0 ·如申請專利範圍第1項所述之研磨組成物，其中該驗^生化合物包括碳酸銨、碳酸、碳酸鋼、fet鼠知*、酸氫鉀、碳酸氫鋼、鱗酸銨、磷酸鉀、嶙酸鋼、嶙酸氫銨、鱗酉艾戴卸、鱗酸氯鋼、焦嶙酸钾、然麟版納、棒樣酸卸、棒樣酸氫鉀、葡萄酸鉀、琥轴酸鉀、醋酸銨、草酸鉀、草酸氫銨、酒石酸鍵、酒石酸_、酒石酸氫錄、山梨酸鉀、硝酸#5、鐵氫化鉀、氰化銨、氰化鉀、氰化#5、氫氧化钾、氫氧化銨或四甲基氫氧化銨（TMAH>。 II ·如申請專利範圍第1項所述之研磨組成物，其中於該研磨組成物中之該驗性化合物之含量介於 0.05-10 % (mass%)。 1 2 ·如申請專利範圍第11項所述之研磨組成物，其中於該研磨組成物中之該驗性化合物之含量介於 0_3-5%(mass%) 〇 1 3 ·如申請專利範圍第1項所述之研磨組成物，更包栝一氧化劑。 14·如申請專利範園第1 3項所述之研磨組成物，其中該氧化劑包括過氧化氫、過硫酸銨、氯酸鉀、過氣酸鉀、過氯酸鈉、過破酸鉀、過蛾酸鈉、溴酸鉀以及溴酸鈉。 1 5 ·如申請專利範圍第1 3項所述之研磨組成物，其中該研磨組成物中該氧化劑含量介於〇 0〇5-l〇%(mass%)。 2188-6693-P 23 200530380 1 6.如申請專利範圍第1 5項所述之研磨組成物，其中該研磨組成物中該氧化劑含量介於〇〇3-5%(mass%)。 1 7 ·如申請專利範圍第1項所述之研磨組成物，更包括一蜇合劑、一表面活性劑或_防腐刻。 18. —種玻璃基板之研磨方法，包括下列步驟：提供擇自申請專利範圍第丨7項之一研磨組成物；以及利用該研磨組成物，研磨一玻璃基板。 1 9 ·如申請專利範圍第1 8項所述之破璃基板之研磨方法，其中研磨該玻璃基板更包括： φ 預磨該玻璃基板之表面；以及使用該研磨組成物，抛光研磨預磨後之該玻璃基板之表面0 20.如申請專利範圍第18項所述之破璃基板之研磨方法，提供該研磨組成物之步驟包括用水稀釋該研磨組成物。 2188-6693- 24 200530380 七、指定代表圖： (一) 本案指定代表圖爲：第（）圖。 (二) 本代表圖之元件符號簡單説明：無八、本案若有化學式時，請揭示最能類示發明特徵的化學式：200530380 X. Patent application park: 1. A polishing composition suitable for grinding a glass-breaking substrate, including: silicon dioxide; a test compound; and water 0 2 · Grinding as described in item 1 of the scope of patent application The composition, wherein the stone dioxide is colloidal silica, fumed si lie a or precipitated silica. 3. The abrasive composition according to item 2 of the scope of patent application, wherein the silicon dioxide is colloidal silicon. 4. The abrasive composition according to item 3 of the scope of patent application, wherein the colloidal silicon has an average particle size DSA between 5 and 300 nanometers, and the average particle size is measured by a specific surface area method (BET method). Obtained by measuring the surface area of the colloidal silicon. 5. The abrasive composition according to item 3 of the scope of the patent application, wherein the colloidal silicon has an average particle diameter DN4 between 5 and 300 nanometers, and the average particle diameter is determined by laser diffraction scattering method. Measured. 6. The abrasive composition according to item 2 of the scope of patent application, wherein the vermiculite has an average particle diameter DsA between 10 and 300 nanometers, and the average particle diameter is determined by a specific surface area method (BET method) Obtained by measuring the surface area of the colloidal silicon. 7. The abrasive composition according to item 2 of the scope of the patent application, wherein the smoked stone has an average particle diameter of DN4 between 30 and 500 nanometers, and the average particle diameter is determined by laser diffraction scattering method. Measured. 8. The polishing composition according to item 1 of the scope of the patent application, wherein the roundness of the dioxide in the polishing composition is between 0.1 and 50% (mass%). 2188-6693-P 22 200530380 9 · The polishing composition according to item 8 of the patent application park, wherein the content of the hair dioxide in the polishing composition is between 3-30% (mass%). I 0 · The abrasive composition as described in item 1 of the scope of the patent application, wherein the test compound includes ammonium carbonate, carbonic acid, carbonic acid steel, sodium hydroxide, potassium hydrogen acid, steel hydrogen carbonate, ammonium phosphonate, phosphoric acid Potassium, gallate steel, ammonium hydrogen gallate, lindenyl acetate, chloride steel, potassium pyrogallate, Ranbanna, rod-like acid, potassium rodate, potassium gluconate, potassium succinate , Ammonium acetate, potassium oxalate, ammonium hydrogen oxalate, tartrate bond, tartaric acid, hydrogen tartrate, potassium sorbate, nitric acid # 5, potassium iron hydride, ammonium cyanide, potassium cyanide, cyanide # 5, potassium hydroxide, Ammonium hydroxide or tetramethylammonium hydroxide (TMAH >. II) The abrasive composition as described in item 1 of the patent application scope, wherein the content of the test compound in the abrasive composition is between 0.05-10% 1 2 · The polishing composition as described in item 11 of the scope of patent application, wherein the content of the test compound in the polishing composition is between 0-3-5% (mass%) 〇1 3 · The abrasive composition described in item 1 of the scope of patent application, further contains an oxidizing agent. 14. As the item 13 of the patent application park, The abrasive composition as described above, wherein the oxidant includes hydrogen peroxide, ammonium persulfate, potassium chlorate, potassium peroxyacid, sodium perchlorate, potassium peroxyacid, sodium permothate, potassium bromate, and sodium bromate. 1 5 · 如The polishing composition according to item 13 of the scope of the patent application, wherein the content of the oxidizing agent in the polishing composition is between 0.005 and 10% (mass%). 2188-6693-P 23 200530380 1 6. As applied The abrasive composition according to item 15 of the patent scope, wherein the oxidant content in the abrasive composition is between 0.003-5% (mass%). 1 7 · The abrasive composition according to item 1 of the patent scope Materials, including a mixture, a surfactant, or anti-corrosive engraving. 18. A method of grinding a glass substrate, including the following steps: providing a polishing composition selected from one of item 7 of the scope of the patent application; and using the The polishing composition grinds a glass substrate. The polishing method for a glass-breaking substrate as described in item 18 of the patent application scope, wherein grinding the glass substrate further comprises: φ pre-grinding the surface of the glass substrate; and using the Abrasive composition The subsequent surface of the glass substrate 0 20. The method for polishing a glass-breaking substrate as described in item 18 of the scope of the patent application, the step of providing the polishing composition includes diluting the polishing composition with water. 2188-6693- 24 200530380 VII. Designated representative map: (1) The designated representative map in this case is: (). (2) The component symbols of this representative map are simply explained: None 8. If there is a chemical formula in this case, please disclose the chemical formula that best illustrates the characteristics of the invention: