200530119 五、發明說明（1) 【發明所屬之 本發明係 體型微加工製 層微懸臂探針 【先前技術】 目前半導 樹脂固定探針 板表面以達到 於測試過程中 處理高頻訊號 用。另一方面 無法針對微小 面積以減少生 述傳統探針卡 利用微機 針卡缺點。而 ’式的探針排 主，其原因在 壽命。但是利 型的方式更為 接觸阻抗，因 屬薄膜材料製 度的限制，在 求。 技術領域】 G 2探針結構’特別是指-種利用標準 製程’製作具有出平面結構之單 的衣以万法以及該探針結構。 體晶片 的方式 訊號量 容易產 的無線 ，上述 間距的 產成本 的設計 電技術 上述藉 列，至 於單層 用單晶 複雜； 此較適 程的方 實際測 的電路訊 為主，甘 測的目的 生雜訊而 通訊晶片 的探針卡 電極板進 而朝小間 也顯然不 製作的微 微機電技 於探針材 材料與厚 矽製作探 另一方面 合製作微 式製作微 試過程上 號測試 係分別 。其缺 影響測 而言， 因受限 行測試 距電極 適用。 探針陣 術製作 料則以 結構製 針的方 ，電鑄 探針卡 探針卡 無法滿 方式， 利用探 點在於 試結果 該探針 於探針 ，因此 板設計 列能改 的微型 早晶秒 程可提 式，其 鎳與鋁 。雖然 ，但其 足探針 仍以傳統式環氧 針獨立接觸電極 探針尺寸較大， 因此對於必須 卡的設計並不適 的排列方式，而 對於藉縮小晶片 之趨勢而言，上 善舊有傳 探針卡具 或電每鎖 高探針的 製程比電 電極板有 也有少許 剛性受到 測試機台 統式探 有微懸 成型為 強度及 鑄鎳成 較佳的 利用金 薄膜厚 的需200530119 V. Description of the invention (1) [The invention belongs to the present invention is a body-type micro-machined micro-cantilever probe. [Previous technology] At present, semi-conductive resin fixes the surface of the probe board to process high-frequency signals during the test. On the other hand, it is impossible to reduce the shortcomings of using traditional microcomputer needle cards to address the tiny area. The reason for the 'type' probe is its lifetime. However, the favorable method is more contact resistance, which is required due to the limitation of the film material system. [Technical Field] The G 2 probe structure, in particular, refers to a method for fabricating a unit having a planar structure using a standard process, and the probe structure. The method of bulk chip is easy to produce the wireless signal, the above-mentioned pitch production cost design electrical technology is borrowed from the above, as for the single layer using a single crystal is more complex; this is more suitable for the actual circuit test, mainly for testing purposes The probe card electrode plate of the communication chip is noisy, and the pico-electromechanical technology that is obviously not made by the small room is based on the probe material and thick silicon. On the other hand, the micro-manufacturing micro-testing process is different from the first test system. For its lack of impact testing, the distance electrode is applicable due to limited line testing. The material of the probe array is made of structural needles. The electroformed probe card cannot be full. The probe is based on the test results. The probe is on the probe. Therefore, the board design can be changed to a micro-early crystal second. Cheng Keti, its nickel and aluminum. Although, the foot probe still uses a traditional epoxy needle to independently contact the electrode probe. The size is large, so it is not an appropriate arrangement for the design of the necessary card. For the trend of shrinking the chip, there is a good old tradition. The manufacturing process of probe clamps or electric height-locked probes is slightly more rigid than that of electric electrode plates. It is generally tested by the testing machine. Micro-suspension molding for strength and cast nickel for better use of gold film thickness are required.
200530119 五、發明說明（2) 另在相關 的電鑄鎳製程 中產生的殘餘 懸樑在彎曲後 彎曲形變。其 觸特性，相較 提高測試的可 過程中會有產 由上可知 雜，但是具有 鎳製程可提供 電鑄鎳後製程 计不同規格的 程中的要求， 【發明内容】 本發明的 方法，其直接 面的微機械薄 鬲剛性及可大 又本發明 具有單層出平 以及能提供較 生脫層問題。 為達前述 目的’本發明所揭露之出平面電鑄鎳微探 文獻中，e有揭露微探針結構是利肖 人 :己合犧牲層的方式所製成。其利用電鑄鎳：： 應力：使得具有較大殘留應力的第一電鑄鎳‘ ，一併造成較小殘留應力的第二電鑄鎳微縣: 優：便是錄探針結構與電極板有良好的表= =他材料’錄有較低的接觸阻抗，因= ^又。但疋上述兩層結構的電鑄鎳探 生脫離問題。 τ在使用 Λ 晶:Λ程製作的探針卡雖然製程較為複 佳：接觸阻抗，因此本發明：匕;;膜 以製作具有出平面形變的微探、= 強度…撓度，以滿足探針卡丄：f;設 以提咼測試的可靠度及使用壽命。τ 忒過 目的之一係在提供一種微機械 利用薄膜製程產生的殘餘應力效應：=造 膜結構，然後配合電鑌鎳後製程方式，^平 變形位移的探針結構。 衣作出 =鑄在提供一種微機械探針結構，立 大變形可適用於晶片高頻訊號測試:、 且早層電鑄錄結構不因受力而產200530119 V. Description of the invention (2) In addition, the residual cantilever beam generated in the related electroforming nickel process is deformed after bending. Its contact characteristics are relatively different from those in the process of improving the test, but it has the requirements of the nickel process that can provide different specifications of the electroformed nickel process meter. [Abstract] The method of the present invention, which The micromechanical thin concrete surface of the direct surface is rigid and can be made large. The present invention has the problems of single-layer flattening and can provide relatively easy delamination. In order to achieve the aforementioned object, the present invention discloses a planar electroformed nickel micro-probe. In the literature, it is disclosed that the micro-probe structure is made by a method of Li Shao people: a sacrificial layer. Its use of electroformed nickel :: Stress: the first electroformed nickel that causes a large residual stress, and the second electroformed nickel that causes a small residual stress. Micro county: Excellent: the structure of the probe and the electrode plate There are good tables = = other materials' recorded have lower contact resistance, because = ^ again. However, the above-mentioned two-layer structure of electroformed nickel has caused separation problems. τ The probe card made using Λ crystal: Λ process although the process is relatively good: contact resistance, so the present invention: dagger; film to make micro-probe with plane deformation, = strength ... deflection to meet the probe card丄: f; set to improve the reliability and service life of the test. One of the objectives is to provide a micromechanical using the residual stress effect produced by the thin film process: = film-forming structure, and then combined with electro-nickel post-processing method, ^ flat deformation displacement probe structure. Yizhu = Casting provides a micro-mechanical probe structure, which can be used for high-frequency signal testing of wafers: and the early-stage electroformed recording structure is not produced by stress.
第6頁 200530119 五、發明說明（3) 要包含二個部 極板。其設計 成長或沉積薄 然後利用金屬 於微懸臂結構 最後使電鑄在 由於上述 膜材料疊加的 的面積下，結 的鎳材料可以 故可進而提高 平面特性，可 根據本發 構，以下更舉 【貫施方式】 份’其一為出 概念是利用標 膜，接著藉由 沉積的方式製 時所產生的殘 該種子層上的 的電鑄鎳可以 方式來提高厚 構設計的調變 避免雙層結構 元件的可靠度 以增加微探針 明所揭露之目 一較佳實施例 平面微機械結構，另 準體型微加工製程， 蝕刻方式製出微懸臂 作種子層，並利用該 餘應力使其產生出平 金屬鎳形成彎曲結構 衣作成厚結構而不必 度以增加結構剛性， 彈性更大。另一方面 因受外力作用而產生 及使用哥命。又透過 結構在受力過程中的 的、功效，以及製程 ，並配合圖式詳細說 一為I /0電 於砍晶片上 薄膜結構 種子層沉積 面預變形 〇 藉由多層薄 所以在有限 ’單層結構 脫層問題， 微結構的出 位移行程。 方式及結 明0 第一圖之Δ所不係本發明要製作探針的步驟—， 係揭露準備一基材12。該基材12係指單晶矽晶片，驟 洗及去水份之前置處理。 亚已作 >月Page 6 200530119 V. Description of the invention (3) It should include two partial plates. Its design grows or deposits thin, and then uses metal in a micro-cantilever structure to finally make the electroformed under the area of the above-mentioned film material superimposed, the junction nickel material can further improve the planar characteristics. According to the present structure, the following is more detailed [ Implementation method] One of the concepts is to use the standard film, and then the electroformed nickel on the seed layer produced by the deposition method can improve the modulation of the thick structure design to avoid double layers. The reliability of the structural elements is to increase the micro-probe structure disclosed by the microprobe. A preferred embodiment is a planar micro-mechanical structure. In addition, a micro-machining process is prepared. The micro-cantilever is used as a seed layer by etching, and the residual stress is used to generate it. The flat metal nickel is formed into a curved structure to make a thick structure without having to increase the rigidity of the structure, and the elasticity is greater. On the other hand, brother's life is generated and used due to external force. Through the structure in the process of stress, efficacy, and manufacturing process, and with the detailed description of the structure I / 0 on the chip wafer film structure seed layer deposition surface pre-deformation 0 through the multilayer thin, so in a limited 'single Layer structure delamination problem, out-of-displacement stroke of microstructure. The way and the description 0 The Δ in the first figure is not the step of making a probe according to the present invention—it is to expose and prepare a substrate 12. The substrate 12 refers to a single crystal silicon wafer, which is subjected to a flash washing and a water treatment before being removed. Ya made > month
第一圖之B所示係本發明要製作探針的步驟二，談牛 係揭露以熱成長方式，於該基材丨2表面形成一層二X 薄膜微結構1 4。實際操作時，可將作為基材丨2的矽晶片放在 攝氏溫度1050度的爐管中，並控制基材12在爐管 成長1 厚的熱氧化層。 π T間使 第一圖之C所示係本發明要製作探針的步驟三，該步驟The first figure B shows the second step of the probe to be made in the present invention. It is revealed that a two-X thin film microstructure 14 is formed on the surface of the substrate 2 by thermal growth. In actual operation, the silicon wafer as the substrate 2 can be placed in a furnace tube with a temperature of 1050 degrees Celsius, and the substrate 12 can be controlled to grow a thick thermal oxide layer in the furnace tube. The π T interval is shown in step C of the first figure, which is the third step of the probe to be made in the present invention.
mm
I m 第7頁 五、發明說明（4) 係揭露在該薄膜微結構丨4上定 對該薄膜微結構14進行敍刻，使二氧;樑的平面形狀，並 的方式成型’並且使該二氧化石夕；：：懸臂樑經由微影 第-圖之D所示係本發明要製作探二成一缺口 1 6。 係揭露對該矽晶片美材〗2、隹 > 此公木針的步驟四，該步驟 ，液進行選擇性”基材㈣， 凹入且使該定義之二氧化矽薄：莓基材12頂面向下 空，如此該二氧化矽薄層便成、科：：、-狀14的下方形成凹 第-圖之E所示係本3發便:要 蔽式光罩18的製作係只需要將：J ::亚結合。上述遮 ^ J- t , , ^ ;ΙΐΓ:加ΐ::。S前的雷射加工針對韻穿5Q。心厚的 在1 〇 〇 “ m左右的微探針陣列。 衣作間距 .第一圖之F所示係本發明要製作探針的步驟 >，今丰峨 係在該薄臈微懸臂結構丨4上沉積一金屬層2 2驟，、该步驟 ST屬If屬層22殘餘應力的作用“成出平面= f鈦⑴）’並且藉由蒸鍍方式沉積在該。係 大的出平面形變。又若要防止鈦金屬層在製程中產生氧= 200530119I m page 7 V. Description of the invention (4) It is disclosed that the film microstructure 14 is engraved on the film microstructure 14 to make the oxygen; the plane shape of the beam, and the method of forming the shape and to make the Stone dioxide eve; :: Cantilever beam shown by D in photolithography-Figure D shows that the present invention is to be made into a gap 16. It is to expose the beautiful material of the silicon wafer. Step 2 of this male needle. In this step, the liquid is selectively "substrate ㈣", recessed and made the definition of silicon dioxide thin: berry substrate 12 The top surface is downward, so that the thin layer of silicon dioxide is formed. Section: The bottom of the -shaped 14 is formed as shown in Figure E. Figure 3 shows the 3 rounds of the book: The production system of the mask 18 only needs to be masked. Will be: J :: sub-combination. The above cover ^ J- t,, ^; ΙΓΓ: plus ΐ ::. S laser processing before rhyme through 5Q. Heart-thick microprobes around 100 m Array. The distance between clothes is shown in Figure F of the first figure. It is a step of making a probe according to the present invention. Now, the Feng'e system deposits a metal layer 22 on the thin cantilever structure. This step ST belongs to The effect of the residual stress of the If layer 22 is "formation plane = ftitanium)" and deposited on it by evaporation. It is a large out plane deformation. To prevent the titanium metal layer from generating oxygen during the process = 200530119
用，可以在鈦金層上再蒸鍍一層 以不影響微結構殘餘應力大小為^二屬層並當作種子層，但 的大:】、可以藉由鈦金屬層的製程條:件與】：殘餘應力 第一圖之G所示係本發明要製又，、疋 係移除遮蔽式光罩18並在該微薄衣膜作上針：步驟七’該步驟 電鑄鎳結構層24。上述的電鑄鋅制=#、，·。構14之金屬層22上 電鑄槽内進行電鑄，透S3:程可以直接將該晶片置於 接將鎳材料沉積於遮蔽式光罩所定：：j ;上匕：二應’可直 配，可以製造出低殘餘應力的鎳結構層。千/ 的' 鎳結構層24會形成出平面結構，主要是 I 路忒電鑄 緣故。 王要疋因為該鈦金屬層22的 第 係指利 到單層 酸（HF) 姓刻方 請 32及一 電鑄鎳 性。而 結構藉 請 移的機 矽，並據以得 可以利用氫氟 去除，再以濕 黏者層。 包含一微懸臂 程中所揭露的 出平面彎曲特 如此複數探針 探針卡結構。 一可以往復位 待測晶片4 2。 一圖之Η所示係本發明要製作探針的步焉 用蝕刻方式除去部份金屬層2 2及二氧化 結構之電鑄鎳結構層2 4及電極板2 6。其 將微懸臂結構暴露在外的二氧化石夕先行 式去除附著在該微懸臂結構之種子層跟 參閱第二圖所示，本發明所製得的探針 電極板34。其中該微懸臂32係指上述製 層。該電鑄鎳結構層具有單層結構以及 該電極板34係設在該微懸臂32的一端。 電極板34組設在一基座36上，即構成一 參閱第三圖所示，探針卡係用以組設在 座3 8，且各微懸臂3 2的自由端彎曲朝向It can be used to deposit another layer on the titanium gold layer so as not to affect the microstructure residual stress. It is used as a seed layer, but its size is large:]. It can be processed by the titanium metal layer: pieces and] : Residual stress shown in G in the first figure is that the present invention is to be prepared. First, the masking mask 18 is removed and the micro-thin film is used as a needle: Step 7 ′ This step is electroforming a nickel structure layer 24. The above-mentioned electroformed zinc is made of ## ,, ·. Electroforming is performed in the electroforming groove on the metal layer 22 of the structure 14. Through S3: Cheng, the wafer can be directly placed in the nickel material deposited on the masking mask. Determined by: j; upper dagger: two should be directly matched , Can produce low residual stress nickel structure layer. Thousands / 'of the nickel structure layer 24 will form a planar structure, which is mainly due to the I-Road electroforming. Wang Yaozheng, because the titanium metal layer 22 refers to a single layer of acid (HF), the last name is 32 and an electroformed nickel. The structure can be removed by silicon, and can be removed by hydrofluoride, and then wet the layer. Including a micro-cantilever process revealed the plane bending characteristics of such a plurality of probes probe card structure. One can reciprocate the wafer to be tested 4 2. The figure (1) shows the steps for preparing a probe according to the present invention. Part of the metal layer 22 and the electroformed nickel structure layer 24 and the electrode plate 26 of the dioxide structure are removed by etching. It exposes the micro-cantilever structure to the dioxide dioxide in advance to remove the seed layer attached to the micro-cantilever structure. Referring to the second figure, the probe electrode plate 34 prepared by the present invention. The micro-cantilever 32 refers to the aforementioned layer. The electroformed nickel structure layer has a single-layer structure and the electrode plate 34 is disposed on one end of the microcantilever 32. The electrode plates 34 are arranged on a base 36, that is, as shown in the third figure. The probe card is used to be arranged on the base 38, and the free ends of the micro cantilevers 32 are bent toward
第9頁 五、發明說明（6) 當該機座38朝待測晶片42位移，則該微懸臂3 晶片42上的電極板44接觸而達到檢測的目的。 "Μ待⑷ 在上述檢測說明中，該待測晶片42上的電極 :度差，而本發明所設計之探針在面對此種狀況時，可 …亥機座38的^程，配合各微懸臂32自由端的彈性位移作 用，可以確保每一電極板44皆能與微懸臂32接觸。 請參閱”示的實驗結果’以二氧化矽微懸臂樑厚 又亚鍍上厚度〇.2//111之鈦金屬 ^ ^^100,mT ^ 過curve fitting曲線方程式可以預測，要透 格50 _的形變量要求，其長度約140_即可 之、Μ規 發明的微懸臂32透過出平面特性，可以_ 、5之，本 力過程中的位移行程，並且輕易達到=受 又該微懸臂32為單層金屬結構，所以在受 要求。 =層的問題，並可據此使得元件的可靠度壽= 又目前在晶片測試上，要確保探針盥 接觸阻抗以及不破壞電極表面，必須 ^ — 间百良好的 性要符合測試機台規範的要求。例如士 ,個彳木針的機械特 厚分別設定為250…50…例广〇:電鑄鎳懸臂樑的長寬 中利用熱應力使微懸臂樑結構產生預：變二先立在白模士擬過程 出平面變形量大約為57 //in，以模擬和^ 便八自由端點的 的變形狀態。然後用非線性行為的製^成之後 懸臂樑自由端施加垂直集中力2 *會，、吴式’於％曲變形的 ，以模擬探針與電極之 200530119 五、發明說明（7) 表小接觸力， 力造成的位移 到微探針的機 可以符合探針 請參閱第 可將微懸臂3 2 式製作厚結構 所示，該微懸 懸樑結構在抵 可靠度。此外 製作成雙臂平 是以由本 明可以改善一 結構及出平面 幾何形狀增加 實驗，設計出 的系統測試。 則出平面的變形量剩下約12 ，即探針為 量為45 // m。因此根據上述的模擬方式=π 械特性，再透過幾何參數的調配，冑 付 卡相關的應用規範。 F m 五A圖所示，為了製作間距較小的探針陣 結構製作成單臂懸樑結構，並且利用電鑄鎳方 ，以提高探針的接觸剛性。又請參閱第W圖 臂32可以製作成V型臂懸樑結構，由於該¥型臂 抗側向扭矩的能力較佳，因此更能提高使用的 請參閱第五C圖所示，該微懸臂32結構也可以 行懸臂樑結構。 發明所揭露的探針製法及探針結構可知，本發 =微探針的缺點，包括利用不同厚度之電鑄鎳 結構，提高探針剛性及變形撓度；又利用不同 微機械結構的可靠度，以及透過相關的分析與 不同規格的微探針陣列，使其適用於不同規範 以上乃本發明之較佳實施 例以及設計圖式僅是舉例說明 權利範圍，凡以均等之技藝手 圍」内容所涵蓋之權利範圍而 ’而為申請人之權利範圍。 例以及設計圖式，惟較佳實施 ’並非用於限制本發明技藝之 段、或為下述「申請專利範 貫施者，均不脫離本發明之範Page 9 V. Description of the invention (6) When the base 38 is displaced toward the wafer 42 to be measured, the electrode plate 44 on the wafer 42 of the micro cantilever 3 contacts to achieve the purpose of detection. " Μ 待 ⑷ In the above test description, the electrode on the wafer 42 to be tested: the degree difference, and when the probe designed by the present invention faces such a situation, it can ... The elastic displacement of the free end of each micro cantilever 32 can ensure that each electrode plate 44 can contact the micro cantilever 32. Please refer to the "experimental results" shown below. The thickness of the silicon dioxide micro-cantilever beam is sub-plated with titanium metal with a thickness of 0.2 // 111 ^^^ 100, mT ^. It can be predicted by the curve fitting curve equation. The amount of deformation required is about 140_. The micro cantilever 32 invented by the M gauge can pass through the plane characteristics. It can be 5 or 5. The displacement stroke in the process of the force, and easily reach = accept the micro cantilever 32. It is a single-layer metal structure, so it is required. = Layer problem, and the reliability of the component can be made accordingly. At present, in wafer testing, to ensure the contact resistance of the probe and not to damage the electrode surface, it must be ^ — The good performance of Jianbai should meet the requirements of the test machine specification. For example, the mechanical thickness of a cypress needle is set to 250 ... 50 ... Example: 0: The length and width of the electroformed nickel cantilever are used to make micro The cantilever beam structure is generated in advance: the second deformation is first established in the white mold simulation process to produce a plane deformation of about 57 // in, to simulate the deformation state of the eight free endpoints. Then use the nonlinear behavior to make Afterwards, the free end of the cantilever beam exerts a vertical concentrated force 2 * "Wu Shi" deformed in% curvature to simulate the probe and electrode 200530119 V. Description of the invention (7) The table shows a small contact force. The displacement caused by the force to the microprobe can meet the probe. The micro-cantilever can be used to make thick structures, as shown in Figure 3, and the micro-cantilever structure is reliable. In addition, the double-arm cantilever is designed to test a system designed to improve a structure and increase plane geometry. The amount of deformation out of the plane is about 12, that is, the amount of the probe is 45 // m. Therefore, according to the above-mentioned simulation mode = π mechanical characteristics, and then through the configuration of geometric parameters, the relevant specifications of the card are paid. F m 5 As shown in Figure A, in order to make the probe array structure with a small pitch, a single-arm cantilever structure is used, and the electroformed nickel square is used to improve the contact rigidity of the probe. See also Figure W. The arm 32 can be made into a V shape. The cantilever beam structure, because the ¥ -type arm has better ability to resist lateral torque, so it can be used more. Please refer to Figure 5C. The micro-cantilever 32 structure can also be a cantilever beam structure. Needle It can be known from the probe structure that the shortcomings of the present invention = microprobes include the use of electroformed nickel structures of different thicknesses to improve the rigidity and deflection of the probes; the reliability of different micromechanical structures; Specifications of microprobe arrays, which are suitable for different specifications. The above are the preferred embodiments of the present invention and the design drawings are only examples of the scope of rights. It is the scope of the applicant's rights. Examples and design drawings, but the preferred implementation is not for the purpose of limiting the technical skills of the present invention, or for the following "patent applicants who do not depart from the scope of the present invention
第11頁 200530119 圖式簡單說明 m:系本發明要製作微探針的步驟 ::;之B係本發明要製作微探針的步驟二。 μ—ϊ之〇係本發明要製作微探針的步驟三。 一 ®之0係本發明要製作微探針的步驟四。 筮一=之E係本發明要製作微探針的步驟五。 坌一二係本發明要製作微探針的步驟六。 一二之G係本發明要製作微探針的步驟七。 第：ϊ ίΐ係本發明要製作微探針的步驟八。 糸本發明製作成探針卡之立體示意圖。 ί二=係本發明之探針卡測試狀態示意圖。 第：Α":係本太發：之微。懸臂長度與出平面形變量關係圖 β ’、本I明之單臂懸樑結構外觀圖。 =五Β圖係本發明之v型臂懸樑結構外觀圖。 五C圖係本發明之平行雙臂懸樑結構外觀圖。 12基材 1 6缺口 2 2金屬層 2 6電極板 3 4電極板 38機座 44電極板 1 4薄膜微結構 18遮蔽式光罩 24電鑄鎳結構層 32微懸臂 3 6基座 42待測晶片Page 11 200530119 Brief description of the diagram m: is the step of making the microprobe of the present invention ::; B is step two of the present invention to make the microprobe. μ-ϊZ is the third step of the invention to make a microprobe. One of 0 is Step 4 of the present invention to make a microprobe.筮 一 = E is step five of the present invention to make a microprobe. Step 12 is step 6 of the invention to make a microprobe. The first and second steps G are step 7 of the present invention to make a microprobe. No .: The eighth step is the eighth step of making a microprobe according to the present invention.立体 A three-dimensional schematic diagram of a probe card made by the present invention. Two: is a schematic diagram of the test state of the probe card of the present invention. Article: Α ": Department of Too Fat: Micro. Relation diagram between cantilever length and out-of-plane deformation β ', the external view of the single-arm cantilever structure of the present invention. = Five B is an external view of a v-arm cantilever structure of the present invention. Figure 5C is an external view of the parallel-arm cantilever structure of the present invention. 12 Substrate 1 6 Notch 2 2 Metal layer 2 6 Electrode plate 3 4 Electrode plate 38 Frame 44 Electrode plate 1 4 Thin film microstructure 18 Masking photomask 24 Electroformed nickel structure layer 32 Micro cantilever 3 6 Base 42 to be tested Chip
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