200528571 玖、發明說明： 【發明所屬之技術領域】 本發明係關於沈積膜於基板上。I特別是，本發明關 於製造均勻、等向性應力於一濺鍍膜中之方法與設備。 【先前技術】 薄膜通常係藉輝光放電電t中減鍵而沈積於基 板上，其中加速離開電漿之離子撞擊原子使其離開靶材（來 源）材料，因此電子被傳送至基板。通常是使用-磁性控制 電聚產生器（磁電管’ magnetron)’以增加难鍍效率且減低 最小操作壓力。滅鍍因為可用於任何材料而係一較佳沈積 技藝’由於沈積原子之能量有助於膜的附著，且因為基板 不會變得非常熱。 檢跨大型基板之膜厚度的均勻性通常係很重要，且習 知係採用二種方式中之一以達到此均勻性。 其中一方式係將該基板定位於相對基板與靶材之直徑 係離靶材較遠的一半徑處。為增加產能且有效地使用靶 材，許多基板係位於此半徑形成之半球上的大多數部位， 且保持一行星（二軸）式運動，使得在沈積時基板佔有該半 球形上相當廣的位置。 第二方式使用一矩形乾材，該把材的較長尺寸係大於 基板。該基板係緊靠靶材配置，且以線性傳送方式向後與 前橫跨把材運動’使得該基板被漆上一内有持續數層之均 勻條狀膜，很類似以一滾筒上漆。通常每一次通過係沈積 3 200528571 100奈米厚之膜。 濺鍍係用於各種微電子結構之形成。此等結構中有/ 圖案化彈簀結構’係用於此應用中作為裝置測試。例如D · Smith與 S. Alimondada所著之微影圖銮化彈薯 (Photolithosraphically Patterned Spring Contact^、美國專 利第5,613,861號（1997年3月25曰）、美國專利第 5,848,685號（1998年12月15日）及國際專利申請案 PCT/US 96/08018(1996年5月30曰申請）等中，揭系，種 微影圖案化彈簧接觸，該接觸係「形成在一基板上真電性 連接二裝置上之接觸墊。該彈簧接觸也補償熱與機械變化 及其他％ i兄因子。在該彈簧接觸内固有的應力梯度造成該 彈簧的一自由部份向上彎且離開該基板。一錫定部份仍固 疋在該基板且係電性連接至基板上的一第一接觸塾。該彈 簧接觸係由一彈性材料製造且該自由部份柔性地接觸一第 二接觸墊，因而接觸二接觸墊」。 此圖案化技術係依賴能控制在基板上極高程度之膜機 械應力均勻性。應力一般會存在薄膜中且通常係不需要。 確實’許多製程控制技藝已使用在行星式與線性傳送濺鍍 令（以及在其他膜沈積製程中）以使應力最小。因此，雖然 已瞭解許多影響應力之因子，目前發展之技藝係關於實質 上消除此應力。 離子森擊係習知用以在任何真空製程中增加壓縮應 力。在磁電管減鑛中，低電聚壓力增加壓維，較高麗力蓋 生拉伸應力’而更高壓力導致在膜平&上不具機械強度之 4 200528571 多孔膜。藉由在沈積中增加電漿壓力以賦予應力梯度之磁 電管濺鍍沈積薄膜，係目前用於施行圖案化彈簧技術之較 佳技藝。 雖然如何使應力最小且如何製造高壓縮或拉伸應力係 此項技術中為人熟知，在橫跨大型基板上使應力最大且控 制均勻高應力則尚未為人已知。使應力位準最大且使其均 勻係有關製造圖案化彈簧結構所需求。能提供製造均勻、 等向性應力於一濺鍍膜中之方法與設備將是具有優勢的。 【發明内容】 本發明提供製造均勻、等向性應力於一濺鍍膜中之方 法與設備。在較佳具體實施例中，本發明提出一新穎濺錢 幾何形狀及一傳送速度的新範圍，此二者協同下能允許達 到該膜可支持之最大應力，同時避免x-γ應力異向性，且 防止橫跨該基板的應力不均勻性，其中X-Y指在基板平面 上的二正交尺寸。 本發明之較佳具體實施例至少包含用於在一基板上沈 積一膜之方法與設備，至少包含下列步驟：在該基板及/ 或該沈積來源對該基板的一垂直軸之旋轉的任何連續不同 離散沈積角，沈積連續層之膜於該基板上；從各個不同之 沈積角提供與各個其他沈積角實質上相同量之沈積；其中 該整體沈積膜於平行該基板與繞該垂直軸旋轉之不同角度 處，在性質上均表現實質等向性。 本文中揭示之方法與設備更包含下列步驟：將該連續 5 200528571 層之膜的厚度減至與一沈積材料内的一性質投射（property projection)距離相同；其中該性質投射距離至少包含一距 離，在該距離整個該膜厚度中從點到點的一相關膜性質變 動，經由該膜厚度平均下對該膜的整體性質影響會變得很 小；且其中該變動是由層次造成。 在一較佳具體實施例中，該性質投射距離係介於該沈 積材料的一原子直徑之最小值到用於應力與應變的十個原 子直徑之最大值内，及到用於磁性性質的一磁域直徑之最 大值内。 本文中揭示之方法與設備更包含以一行星式方式移動 各基板通過一或多數個相同之沈積材料來源；其中當每一 次該基板隨著該基板執行一行星式繞軌道運行而通過該沈 材料來源中之一時，該基板係相對於其所通過之該沈積材 料來源繞該基板之垂直軸旋轉。 在一較佳具體實施例中，該基板每一次通過η個沈積 材料來源中之一時，其會旋轉360/η度（其中η係一大於2 之整數），或如果η等於2時為90度。 本文中揭示之方法與設備更包含提供繞一圓配置之四 沈積材料來源；且將各該沈積材料來源的一相關異向性性 質定位於與前一沈積材料來源相差90度之位置；其中當該 基板繞執道時，各基板從一固定點測量係對其垂直軸維持 一固定之旋轉方位；其中該膜係以連續層之異向性旋轉90 度的積層方式沈積。 在較佳具體實施例中’該沈積材料之來源在該沈積 6 200528571 材料來源的一相關異向性質中呈現雙重對稱性。 在一較佳具體實施例中，當該來源呈現雙重對稱性 時，對於在該膜層之該相關性質中的該異向性而言’該基 板旋轉270度係等於該基板旋轉90度。 本文中揭示之方法與設備更包含提供二沈積材料來 源；其中各沈積材料來源具有雙重對稱性；其中該等沈積 材料來源係彼此相關地配置，使得該沈積材料來游的一相 關異向性性質相對於前一沈積材料係旋轉90度；其中當該 基板繞轨道時從一固定點測量，各基板對其垂直軸係維持 一固定之旋轉方位；且其中該膜係以連續層之異向性係旋 轉90度的積層方式沈積。 在一較佳具體實施例中，該沈積材料來源至少包含線 性磁電管濺鍍靶材，該沈積材料係依一具有圓角之近似矩 形圖案從該處發散。 在一較佳具體實施例中，沿一基板垂直軸且介於一基 板表面與一沈積材料發散之靶材表面間的距離，與介於從 該矩形發散圖案的一端發散時之材料及該基板一最靠近邊 緣間之距離相比係十分小，使得該膜的一相關性質在從該 基板的中心沿該基板到該基板之邊緣係十分地均勻。 本文中揭示之方法與設備更包含藉由造成一沿一基板 垂直軸且介於一基板表面與一沈積材料發散之靶材表面間 的距離，與介於從該矩形發散圓案的一端發散時之材料及 該基板的最靠近邊緣間之距離相比係十分地小，而使橫跨 該基板沿平行該基板方向的膜應力係十分地均勻。 7 200528571 在一較佳具體實施例中，沿一基板垂直軸且介 板表面與一沈積材料發散之靶材表面間的距離，與 該矩形發散圖案的一端發散時之材料及該基板的一 邊緣間之距離的比率，係1/4或更少。 本文中揭示之方法與設備的較佳具體實施例更 稱地配置至少一沈積來源在該基板之旋轉與該沈積 該基板的一垂直轴之任何連續不同沈積角；且沈積 之膜於該基板上，用以在該膜中達到高位準之應力 該應力在一膜平面上係等向的，且在一基板表面之 上係均勻的。 在此揭示之方法與設備更包含每次通過一使用 佈磁電管濺鍵的輕材時，從長且實質上矩形靶材提 原子層量之沈積厚度；其中由在沈積入射角、離子 基板方位角中任何之週期性變動造成在.膜應力上的 最小。 在此揭7F之方法與設備更包含該基板在連續通 源以積層該膜之間’實質上相對該來源旋轉該基板 其中在一膜平面内之X-Y異向性得以消除。 在此揭示之方法與設備更包含使用比用於均勻 所需更長之磁電管靶材（當與一基板直徑比較時）； 達到沿該靶材一長軸上之均勻膜應力。 在此揭示之方法與設備更包含提供一驅動機構 少包含一繞一環基板配置之圓周狀鏈條，及一從一 伸至一固定式中央扣鏈齒之鏈條，以將高速度、行 於一基 介於從 最靠近 包含對 來源對 連續層 ，其中 大面積 緊密分 供一單 轟擊與 影響係 過該來 9〇度； 膜厚度 其中可 ’係至 基板延 星式運 8 200528571 動賦予該基板^ 【實施方式】 本文中提出一新穎濺鍍幾何形狀及一傳送速度 圍’二者共同允許達到該膜可支持之最大應力，同 χ·γ應力異向性，且防止整個基板之應力不均句， 該膜厚度之應力振盪。 本發明係部份根據對原子沈積於基板上之入射 應力之重要決定因素的認知，愈大的掠（離開垂直） 愈多張力，或如果過量時會導致多孔性。在行星式 動中，在基板上離行星轴一半徑内的不同點上及在 點處的不同方位角，必然會經歷到不同時間序列之 且因此有不同膜應力。 為了本文中說明需要，該方位角係指在膜平面 旋轉，從+Χ至+Υ至-X至-γ ;而膜應力永遠是雙軸 沿二轴X與γ存在。膜應力可為異向性，即在一特 與Υ不同，且在橫跨基板之X或Υ方向内或通過膜 可能是不均勻。 在線性傳送中，平行基板傳送之方位角在一次 會經歷一與垂直方向不同之沈積角順序。此外，在 送中，單次通過時通常會沈積100奈米或約300單 (單層）之膜。在通過時，入射角會從基板接近數材 掠，變化到當該基板係直接在靶材前實質上垂直， 基板離開時再低掠。因此，有層次的一交替應力位 的新範 時避免 及通過 角係膜 角導致 基板運 一特定 沈積角 ΧΥ内 向，即 定點}c 之厚度 通過中 線性傳 原子層 時之低 到當該 準導致 200528571 阻止達 在 一環狀 轉，而 速度但 於一固 且通過 其長軸 以致因 低*不 係大於 置上的 過靶材 向相對 送固有 基板以 也導致 盤之中 且*因此 第 轉的該 材的可 之數目 到最大應力。 本文揭示之幾何形狀（參見第1圖）中，基板1 4係以 配置在一旋轉盤13上，繞其等本身的軸相對該盤旋 該環基板與該盤同時繞著該盤之軸以實質上相同角 相對於一固定點係相反方向旋轉，因此該基板相對 疋點並未旋轉。該基板靠著間距19 (參見第2圖） 各個一或多數矩形乾材的中央。各把材之位置係以 〜一盤之半徑’且其具有之長度比基板14大許多， 為與乾材末端之接近10所造成的低掠入射沈積降 會導致沿該方向之應力不均勻。該靶材之長度通常 達到膜厚度均勻性所需。 特別有效之具體實施例使用二個在相互垂直角度位 乾材，使得基板1 4在每一次盤丨3旋轉時會執行通 15二次，其中每一次通過時使基板14之χ與γ方 於通過方向反轉。此種膜之積層方式將習知線性傳 之Χ-Υ異向性平均掉。當該盤繞一固定點旋轉時， 實質上相同角速度但 夺號相反（相對於該盤）旋轉， 膜厚度之均勻性’因為在基板1 4内緣之點（朝向該 心），會以與外緣點相同之線性速度橫過乾材丨5， 每一次通過會聚集相同時間長度之沈積。 1圖顯示旋轉盤13具有同時繞其等本身之轴16旋 環基板。第1圖也顯示在相互垂直角度之二矩形把 能位置，盤1 3每一次旋轉會使各晶圓1 4通過乾材 加倍。當一晶圓14通過矩形靶材15下時其需求之 10 200528571 方位18也顯示於第1圖中。對於此實例，晶圓旋轉90度 以獲得在各靶材下的相同方位1 8 (相對於一固定點）。熟習 此項技術人士應暸解可提供其他有關本發明之配置。例 如，可在該盤上的一圓内設置四靶材，每一靶材與次一者 相隔90度方位。 一離子源1 7可座落於繞該盤1 3的一點上，以當其每 一次通過時轟擊該膜一次，且因此在需要時賦予壓縮應 力。第1與第2圖顯示該離子源17的一位置。另一選擇是， 該基板14可被以直流電源（如導電）或射頻（如絕緣）電性偏 壓’以加速轟擊離子離開由該濺鍍來源產生之電聚，不而 需要使用離子搶。然而，當基板係在運動時係難以傳遞與 含有射頻偏壓。 在盤13單次旋轉的整個過程中，各基板I*會經歷影 響應力之數個製程參數的週期性變化，如入射沈積角、對 靶材長軸之方位角及離子轟擊通量。因為本發明的一目的 在於使這些變化不會導致膜應力的一週期性層次，此變化 的週期換成厚度而言係在數原子間距之等級，因此所發展 出之極微結構不會呈現一變化。同時，實際上需求以儘可 能高的速率沈積膜，同時可增加製造產能且使在真空室中 來自背景氣體之共同沈積雜質的有害影響最小。因此，需 求以遠高於所需之高速旋轉該盤。例如，在一通常需求之 1奈米/秒（3 ·6毫米/小時或約3單層/秒）的時間平均沈積 率，該盤較佳是以每秒1至3轉或每分鐘60至180轉之速 度旋轉。此係比習知行星式沈積所需約快1 〇倍，且比在線 200528571 性傳送中通過時間約快1 00倍。 在替代性具體實施例中，習知線性傳送幾何形狀 達到單層量之積層。其也可在各通過之末端增加一基 轉連結件而達到X-Y積層。 已發展構成行星式運動連結件的各種方式且係在 中 通㊉疋有關齒輪、鍵條或磨擦滾輪中之一，以搞 板（行星）旋轉與該盤（軌道）旋轉，及因此連接到真空 的一旋轉饋通（經由一外部馬達驅動）。分開的行星與 驅動器也可使用一同軸旋轉之饋通加以納入。 在此揭示一以鏈條耦合該執道與行星驅動器的新 簡單方法用於本發明。第3圖係以一概要圖顯示如果 —鏈條輕合依據本發明之行星式系統（配置於第1圖， 的平面圖。在此方式中，首先一單一旋轉饋通會驅動 1 3 ’使得所有在該等平台22上之基板一起旋轉。最後 板轴23中之一具有的一第二扣鏈齒輪25，會經由一 鍵條26連結至在盤i 3中央一相同直徑的固定扣鏈 27。此導致基板相對於盤丨3係以相同角速度但與該環 相反之方向旋轉，本發明具有最少之活動零件與硬體 此具有在高速時之最大強健性。在第二鏈條上之扣鏈 比可加以改變，以提供行星與軌道角速度的不一致性 而’以第3圖之配置，當基材通過該來源時其相對於 材料來源並未旋轉，因此避免可能於沈積情況中在基 之半徑不均勻性。·也可使用一等效之齒輪連結件。 也可 板旋 使用 合基 壁上 軌道 穎與 使用 Μ時 該盤 ，基 第二 齒輪 旋轉 且因 齒輪 。然 沈積 板上 12 200528571 實例 實現本發明之夾具係安裝在一習知10·7托耳（τ〇γγ)不 鏽鋼或鋁高真空室中，該室具有彈性體密封件及低溫泵系 統，諸如由Leybold與其他販賣者所製造。 該系統包括至少二矩形磁電管濺鍍來源（諸如由 Leibold所製造）及具有6吋直徑離子束的一離子搶（諸如由 Commonweath所製造之Kaufman型搶），配置如上述。陰200528571 2. Description of the invention: [Technical field to which the invention belongs] The present invention relates to depositing a film on a substrate. In particular, the present invention relates to a method and apparatus for manufacturing uniform, isotropic stress in a sputtered film. [Previous Technology] Thin films are usually deposited on substrates by subtracting bonds from glow discharge electricity t, where ions that accelerate away from the plasma impinge on atoms and leave the target (source) material, so electrons are transferred to the substrate. Usually, a magnetically controlled electro-polymerization generator (magnetron) is used to increase the efficiency of difficult plating and reduce the minimum operating pressure. Etching is a preferred deposition technique because it can be used for any material 'because the energy of the deposited atoms facilitates film adhesion and because the substrate does not become very hot. It is often important to check the uniformity of film thickness across large substrates, and it is common practice to use one of two methods to achieve this uniformity. One way is to position the substrate at a radius that is relatively far from the diameter of the substrate and the target. In order to increase productivity and effectively use targets, many substrates are located in most parts of the hemisphere formed by this radius, and maintain a planetary (two-axis) type movement, so that the substrate occupies a relatively wide position on the hemisphere during deposition . The second method uses a rectangular dry material whose longer dimension is larger than the substrate. The substrate is arranged next to the target material and moves backward and forward across the handle in a linear transfer mode, so that the substrate is painted with a uniform strip-shaped film that lasts for several layers, much like painting with a roller. A film of 100 nanometers thick is usually deposited each time through the system. Sputtering is used to form various microelectronic structures. These structures have / patterned impeachment structures' are used for device testing in this application. For example, D. Smith and S. Alimondada's Photolithosraphically Patterned Spring Contact ^, U.S. Patent No. 5,613,861 (March 25, 1997), U.S. Patent No. 5,848,685 (Dec. 15, 1998 Japan) and international patent application PCT / US 96/08018 (applied on May 30, 1996), etc., are exposed, a lithographic patterned spring contact, the contact is "formed on a substrate for true electrical connection 2 Contact pads on the device. The spring contact also compensates for thermal and mechanical changes and other factors. The inherent stress gradient within the spring contact causes a free portion of the spring to bend upward and leave the substrate. A tin fixed portion The part is still fixed on the substrate and is a first contact electrically connected to the substrate. The spring contact is made of an elastic material and the free part flexibly contacts a second contact pad, so the two contact pads are contacted This patterning technology relies on the ability to control the mechanical stress uniformity of the film on the substrate to a very high degree. Stress is usually present in the film and is usually not needed. Indeed, many process control techniques have been used Planetary and linear transfer sputtering (and in other film deposition processes) minimize stress. Therefore, although many factors that affect stress are known, currently developed techniques are about virtually eliminating this stress. It is known to increase compressive stress in any vacuum process. In magnetron tube ore reduction, the low galvanic pressure increases the dimensional dimension, and the higher Lili produces tensile stress, and the higher pressure results in no mechanical strength on the membrane level & No. 4 200528571 Porous membrane. Magnetron sputtering deposition film by increasing plasma pressure to give stress gradient in sedimentation is a better technique currently used to implement patterned spring technology. Although how to minimize stress and how to make high Compressive or tensile stress is well known in the art. It is not known to maximize the stress and control the uniform high stress across large substrates. Maximizing the stress level and making it uniform are related to the manufacture of patterned springs. Structural requirements. It would be advantageous to be able to provide methods and equipment for manufacturing uniform, isotropic stress in a sputter coating. [Summary of the Invention] The present invention provides a method and equipment for manufacturing uniform and isotropic stress in a sputter coating. In a preferred embodiment, the present invention proposes a novel money sputter geometry and a new range of transfer speeds. It can allow to reach the maximum stress that the film can support, while avoiding the x-γ stress anisotropy, and prevent the stress unevenness across the substrate, where XY refers to the two orthogonal dimensions on the substrate plane. Preferred embodiments at least include a method and apparatus for depositing a film on a substrate, including at least the following steps: any continuous different discrete deposition angles of rotation of a vertical axis of the substrate on the substrate and / or the deposition source Depositing a continuous layer of film on the substrate; providing substantially the same amount of deposition from each of the other deposition angles as each other; wherein the overall deposited film is at different angles parallel to the substrate and rotating around the vertical axis, They are essentially isotropic in nature. The method and equipment disclosed herein further include the following steps: reducing the thickness of the continuous 5 200528571 layer film to the same distance as a property projection in a deposited material; wherein the property projection distance includes at least a distance, A related film property change from point to point throughout the film thickness over the distance, and the average property of the film will have little effect on the film thickness, and the change is caused by layers. In a preferred embodiment, the property projection distance is between a minimum of an atomic diameter of the deposited material to a maximum of ten atomic diameters for stress and strain, and a distance of one for magnetic properties. Within the maximum diameter of the magnetic domain. The method and apparatus disclosed herein further include moving each substrate in a planetary manner through one or more of the same source of deposition material; wherein each time the substrate passes through the sinking material as the substrate performs a planetary orbital motion In one of the sources, the substrate is rotated about the vertical axis of the substrate relative to the source of the deposited material through which it passes. In a preferred embodiment, each time the substrate passes through one of the n sources of deposition material, it rotates 360 / η degrees (where η is an integer greater than 2), or 90 degrees if η is equal to 2. . The method and equipment disclosed herein further include providing four sources of deposition material in a circle configuration; and positioning an associated anisotropic property of each source of the deposition material at a position that is 90 degrees away from the source of the previous deposition material; wherein when the When the substrate is detoured, each substrate maintains a fixed rotational orientation from a fixed point measurement system to its vertical axis; wherein the film is deposited in a laminated manner in which the anisotropy of continuous layers rotates 90 degrees. In a preferred embodiment, the source of the deposited material exhibits double symmetry in a related anisotropic property of the source of the deposited material. In a preferred embodiment, when the source exhibits double symmetry, for the anisotropy in the related properties of the film layer, the substrate rotation of 270 degrees is equal to the substrate rotation of 90 degrees. The method and equipment disclosed herein further include providing two sources of deposition material; wherein each source of deposition material has double symmetry; wherein the sources of deposition material are configured in relation to each other, so that the related material has a related anisotropic property. Rotate 90 degrees relative to the previous deposition material; where the substrate is measured from a fixed point as it orbits, each substrate maintains a fixed rotational orientation of its vertical axis; and where the film is anisotropic with a continuous layer Laminated by a 90 degree rotation. In a preferred embodiment, the source of the deposition material includes at least a linear magnetron sputtering target, and the deposition material diverges therefrom according to an approximately rectangular pattern with rounded corners. In a preferred embodiment, the distance along the vertical axis of a substrate between the surface of a substrate and the surface of a target diverging from the deposition material, and the material and the substrate when diverging from one end of the rectangular divergent pattern The distance between the closest edges is relatively small, so that a related property of the film is very uniform from the center of the substrate along the substrate to the edge of the substrate. The method and equipment disclosed herein further include creating a distance between a substrate surface and a target surface divergent from a deposition material along a vertical axis of the substrate, and a divergence from an end of the rectangular divergent circular case. The distance between the material and the closest edge of the substrate is relatively small, so that the film stress across the substrate in a direction parallel to the substrate is very uniform. 7 200528571 In a preferred embodiment, along the vertical axis of a substrate, the distance between the surface of the interposer and the surface of a target from which the deposition material diverges, the material when the divergence from one end of the rectangular divergent pattern, and an edge of the substrate The distance ratio is 1/4 or less. Preferred embodiments of the method and apparatus disclosed herein are more appropriately configured with at least one deposition source at any successively different deposition angle between the rotation of the substrate and a vertical axis on which the substrate is deposited; and a deposited film on the substrate To achieve a high level of stress in the film, the stress is isotropic on a film plane, and uniform on a substrate surface. The methods and equipment disclosed herein further include increasing the deposition thickness of the atomic layer from a long and substantially rectangular target each time a light material is sputtered using a cloth magnetron; Any periodic variation in the angle results in a minimal stress on the film. The method and equipment disclosed here 7F further includes that the substrate is continuously passed through a source to laminate the film 'substantially to rotate the substrate relative to the source, wherein the X-Y anisotropy in a film plane is eliminated. The methods and equipment disclosed herein further include using magnetron targets longer than those required for uniformity (when compared to a substrate diameter); achieving uniform film stress along a major axis of the target. The method and equipment disclosed herein further include providing a driving mechanism including a peripheral chain arranged around a ring substrate, and a chain extending from one to a fixed central sprocket, in order to travel at a high speed in a basic medium. The closest layer consists of a pair of sources and a continuous layer, in which a large area is tightly distributed to a single bombardment and impact. The thickness is 90 degrees; the thickness of the film can be tied to the substrate, which can be given to the substrate. Embodiment] This article proposes a novel sputtering geometry and a conveying speed, which together allow the maximum stress that the film can support, which is the same as the χ · γ stress anisotropy, and prevents the stress unevenness of the entire substrate. The film thickness stress oscillates. The present invention is based in part on the recognition of the important determinants of the incident stress of atoms deposited on the substrate. The larger the sweep (away from the vertical), the more tension, or if it is excessive, it will cause porosity. In planetary motion, at different points on the substrate within a radius from the planetary axis and at different azimuths at the points, it is bound to experience different time series and therefore different film stresses. For the purposes of this article, the azimuth angle refers to the rotation in the plane of the film, from + X to + Υ to -X to -γ; and the film stress is always biaxial along the two axes X and γ. Membrane stress can be anisotropic, i.e., different from Υ in one particular, and may be non-uniform in the X or Υ direction across the substrate or through the film. In the linear transfer, the azimuth of the parallel substrate transfer will undergo a deposition angle sequence different from the vertical direction at a time. In addition, during delivery, a single pass usually deposits 100 nanometers or about 300 single (single layer) films. When passing through, the incident angle will be swept from the substrate close to the material, changing to that when the substrate is directly perpendicular to the target, and then swept low when the substrate leaves. Therefore, a new layer of a layer of alternating stress levels avoids and causes the substrate to transport a specific deposition angle XYZ inward through the keratomic angle, that is, the thickness of a fixed point} c when passing through the atomic layer in a linear manner is so low that 200528571 Prevents up to a circular rotation, but the speed but in a solid and through its long axis so that the low * is not greater than the over-target material sent to the relative substrate to the opposite side also causes the disk and * therefore the first turn The material can be as large as the maximum stress. In the geometry disclosed in this article (see Figure 1), the substrates 14 and 4 are arranged on a rotating disk 13 and the ring substrate and the disk are rotated around the axis of the disk at the same time around the axis of the disk. The same angle is rotated in the opposite direction relative to a fixed point, so the substrate is not rotated relative to the pip. The substrate rests on the center of each of the one or more rectangular dry materials at a distance of 19 (see Figure 2). The position of each handle is ~ 1 disk radius' and it has a length much larger than that of the substrate 14. The low grazing incidence deposition drop caused by the close to 10 of the end of the dry material will cause uneven stress along this direction. The length of the target is usually required to achieve uniform film thickness. A particularly effective embodiment uses two dry materials positioned at mutually perpendicular angles, so that the substrate 14 will perform 15 passes each time the disc 3 rotates, wherein each time the χ and γ of the substrate 14 pass through The direction is reversed. This film lamination method averages out the conventional linear X-Υ anisotropy. When the disk rotates around a fixed point, it has substantially the same angular velocity but the opposite direction (relative to the disk). The uniformity of the film thickness is because the point at the inner edge of the substrate 14 (toward the center) will be the same as the outside. The linear velocity of the same edge point traverses the dry material, and each pass will accumulate the same length of deposition. Fig. 1 shows that the rotary disk 13 has a ring base plate 16 around its own axis 16 at the same time. Figure 1 also shows the rectangular position where the two angles are perpendicular to each other. Each rotation of the disk 13 will double each wafer 14 through the dry material. When a wafer 14 passes under a rectangular target 15, its demand 10 200528571 orientation 18 is also shown in the first figure. For this example, the wafer is rotated 90 degrees to obtain the same orientation 18 (relative to a fixed point) under each target. Those skilled in the art will appreciate that other configurations related to the invention may be provided. For example, four targets can be placed in a circle on the disc, each target being spaced 90 degrees from the next. An ion source 17 can be seated at a point around the disk 13 to bombard the membrane once each time it passes, and thus impart a compressive stress when needed. 1 and 2 show a position of the ion source 17. Alternatively, the substrate 14 may be electrically biased with a DC power source (such as conductive) or a radio frequency (such as insulation) to accelerate the bombardment of ions away from the ionization generated by the sputtering source, without the need for ion grabbing. However, it is difficult to transmit and contain RF bias when the substrate is in motion. During the single rotation of the disc 13, each substrate I * will undergo periodic changes in several process parameters of the shadow response, such as the incident deposition angle, the azimuth angle to the long axis of the target, and the ion bombardment flux. Because an object of the present invention is to prevent these changes from causing a periodic level of film stress, the period of this change is changed to the number of atomic intervals in terms of thickness, so the developed microstructure does not show a change . At the same time, there is a practical need to deposit films at as high a rate as possible while increasing manufacturing capacity and minimizing the harmful effects of co-deposited impurities from background gases in the vacuum chamber. Therefore, it is necessary to rotate the disk at a higher speed than necessary. For example, at a time-averaged deposition rate of typically 1 nanometer / second (3.6 mm / hour or about 3 monolayers / second), the disk is preferably 1 to 3 revolutions per second or 60 to 60 minutes per minute. Rotates at 180 rpm. This system is about 10 times faster than conventional planetary deposition, and about 100 times faster than the transit time in online 200528571 sexual transmission. In an alternative embodiment, it is known that the linear transfer geometry reaches a buildup of a single layer quantity. It can also add a base to the end of each pass to achieve X-Y laminate. Various ways of forming planetary motion couplings have been developed and tied to one of the relevant gears, key bars or friction rollers of Zhongtong to rotate the plate (planet) and the disk (orbit), and thus connect to a vacuum A rotary feedthrough (driven by an external motor). Separate planets and drives can also be incorporated using a coaxial rotating feedthrough. A new and simple method for coupling the channel to the planetary drive in a chain is disclosed herein for use in the present invention. Figure 3 shows a schematic diagram of a planetary system according to the present invention (arranged in Figure 1) in a schematic diagram. In this way, first a single rotary feedthrough will drive 1 3 'so that all The base plates on the platforms 22 rotate together. Finally, a second chain gear 25 provided in one of the plate shafts 23 is connected to a fixed chain 27 of the same diameter in the center of the plate i 3 via a key bar 26. This As a result, the substrate rotates at the same angular velocity with respect to the disk, but in the opposite direction to the ring. The present invention has the fewest moving parts and hardware, which has the maximum robustness at high speed. The chain-to-chain ratio on the second chain can be Changed to provide inconsistencies in planetary and orbital angular velocities and in the configuration of Figure 3, the substrate did not rotate relative to the source of the material as it passed through the source, thus avoiding possible non-uniform radii in the base during deposition ·. An equivalent gear coupling can also be used. It can also be used to screw the track on the base wall and the disk when using M, and the second gear rotates due to the gear. Then the deposition plate 12 2 00528571 Examples The fixture implementing the present invention is installed in a conventional 10 · 7 Torr (τ〇γγ) stainless steel or aluminum high vacuum chamber, which has an elastomer seal and a cryopump system, such as by Leybold and other vendors. The system includes at least two rectangular magnetron sputtering sources (such as those manufactured by Leibold) and an ion trap (such as the Kaufman model manufactured by Commonweath) with a 6-inch diameter ion beam, configured as described above.
極係彼此成90度定位。從磁電管靶材表面至晶圓間之距離 係1吋。 晶圓運動之行星式連結件的連接使得當該等基板繞該 至之中央轴成執道式旋轉時，該晶圓相對一固定點保持在 對其荨本身之垂直轴係在相同的旋轉方位。 繞該中央軸旋轉之該盤承載6吋晶圓於一距該盤中心 10吋之軌道半徑上，且該14吋長磁電管與離子搶係位於 該等晶圓中央。夾具之配置使得可見到該等晶圓整個表面 上均勻的角度分佈及均勻的沈積材料通量。The poles are positioned at 90 degrees to each other. The distance from the surface of the magnetron target to the wafer is 1 inch. The connection of the wafer-type planetary links makes the wafers rotate in a fixed manner around the central axis of the wafer, and the wafer is kept at the same rotation orientation with respect to a fixed point to the vertical axis of the wafer itself. . The disk rotating around the central axis carries a 6-inch wafer on a track radius of 10 inches from the center of the disk, and the 14-inch long magnetron and ion grabber are located in the center of the wafers. The configuration of the jig makes it possible to see uniform angular distribution and uniform deposition material flux on the entire surface of the wafers.
校準過程 校準步驄1 ： 膜應力相對於氬氣體壓力之測量，係藉由在各種固定 壓力下於薄晶圓上濺鍍沈積。該應力接著以習知方式由晶 圓受沈積造成之曲率改變而計算出。在通常最低壓力1毫 托耳下之沈積，可實施將200電子伏氬離子改變至1000 電子伏之通量，以增加壓縮應力。 13 200528571 校準步驟2 ： 實施一多層結構之沈積係使用沿該應力-壓力曲線上 正斜率部份，從壓縮至拉伸應力的一級數。彈簧被圖案化 且提升，而彈簧曲率半徑可從提升之高度計算出。 典型參數 用於沈積之典型參數如下（範圍係顯示在括號中）： 鉬鉻合金靶材，通常係用百分之0至20的鉻；功率為 2400瓦（500至10,000瓦）；氣體流量：氬氣80sccm(50至 500)；壓力：0.6至15毫托耳（0.2至50);轉速：每分鐘 120 轉（10 至 300) ° 離子搶：束電流從50至500毫安培，離子能量從200 至1000電子伏。 對於第一壓縮層，該離子搶與該磁電管在一些具體實 施例中係同時操作。 雖然本發明在此係參考較佳具體實施例加以說明，熟 習此項技藝人士應易於暸解其他應用可替代在此提出者而 不脫離本發明之精神與範疇。因此，本發明只受下文中包 括之申請專利範圍所限制。 【圖式簡單說明】 '第1圖以一概要圖顯示依據本發明的一行星式系統與 靶材之配置與一離子搶的平面圖； 14 200528571 第2圖以一概要圖顯示第1圖中所示之行星式系統的 側視圖，且該圖示範該基板依據本發明靠近該靶材與離子 搶以及基板之相對大小；及 第3圖以一概要圖顯示如果依據本發明第1圖耦合地 配置該行星式系統的一鏈條時之平面圖。 【元件代表符號簡單說明】Calibration process Calibration step 1: Measurement of film stress relative to argon gas pressure is performed by sputtering deposition on thin wafers under various fixed pressures. This stress is then calculated in a conventional manner from the curvature change of the wafer caused by the deposition. Deposition at a typical minimum pressure of 1 mTorr can be performed to change the flux of 200 eV argon ions to 1000 eV to increase compressive stress. 13 200528571 Calibration Step 2: The deposition of a multi-layer structure is performed using a positive slope portion along the stress-pressure curve, from the first order of compression to tensile stress. The spring is patterned and lifted, and the radius of curvature of the spring can be calculated from the height of the lift. Typical parameters The typical parameters used for deposition are as follows (ranges are shown in parentheses): Mo-Cr alloy targets, usually 0 to 20 percent chromium; power 2400 watts (500 to 10,000 watts); gas flow: Argon 80sccm (50 to 500); pressure: 0.6 to 15 millitorr (0.2 to 50); speed: 120 revolutions per minute (10 to 300) ° ion grab: beam current from 50 to 500 milliamps, ion energy from 200 to 1000 electron volts. For the first compression layer, the ion grabbing and the magnetron operate simultaneously in some specific embodiments. Although the present invention is described herein with reference to preferred embodiments, those skilled in the art should readily understand that other applications may be substituted for the presenter without departing from the spirit and scope of the present invention. Therefore, the present invention is limited only by the scope of patent applications covered below. [Brief description of the drawings] 'Figure 1 shows a schematic diagram of the configuration of a planetary system and target and an ion grab according to the present invention; 14 200528571 Figure 2 shows a schematic diagram of what is shown in Figure 1 Side view of the planetary system shown, and the figure demonstrates the relative size of the substrate close to the target and the ion grabber and the substrate according to the present invention; and FIG. 3 shows a schematic diagram if the configuration is coupled according to FIG. 1 of the present invention A plan view of a chain of the planetary system. [Simple description of component representative symbols]
10 接近距離 13 旋轉盤 14 基板 15 靶材 16 軸 17 離子源 18 方位 19 間距 22 平台 23 基板軸 24 鏈條 25 扣鏈齒輪 26 第二鏈條 27 扣鏈齒輪10 Proximity distance 13 Rotating disk 14 Substrate 15 Target 16 Shaft 17 Ion source 18 Orientation 19 Pitch 22 Platform 23 Substrate shaft 24 Chain 25 Sprocket 26 Second chain 27 Sprocket
1515