TW200525219A - Active array liquid crystal display - Google Patents
Active array liquid crystal display Download PDFInfo
- Publication number
- TW200525219A TW200525219A TW93101994A TW93101994A TW200525219A TW 200525219 A TW200525219 A TW 200525219A TW 93101994 A TW93101994 A TW 93101994A TW 93101994 A TW93101994 A TW 93101994A TW 200525219 A TW200525219 A TW 200525219A
- Authority
- TW
- Taiwan
- Prior art keywords
- electrode
- layer
- liquid crystal
- crystal display
- metal layer
- Prior art date
Links
- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 37
- 229910052751 metal Inorganic materials 0.000 claims abstract description 54
- 239000002184 metal Substances 0.000 claims abstract description 54
- 239000003990 capacitor Substances 0.000 claims abstract description 26
- 239000010409 thin film Substances 0.000 claims abstract description 13
- 239000011521 glass Substances 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 62
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 12
- 239000004065 semiconductor Substances 0.000 claims description 10
- 239000011241 protective layer Substances 0.000 claims description 8
- 239000011159 matrix material Substances 0.000 claims description 5
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims 1
- 238000000034 method Methods 0.000 claims 1
- 230000002093 peripheral effect Effects 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 11
- 230000000694 effects Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000005272 metallurgy Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- -1 pin Chemical compound 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Landscapes
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
200525219 五、發明說明（l) - 【發明所屬之技術領域】 本發明係有關於一種主動式陣列液晶顯示器，特別是 指一種主動式陣列液晶顯示器之結構改良及其製程方法。 【先前技術】 J參閱圖一所示’其係為傳統之主動式陣列液晶顯示 态之4效電路圖。從等效電路圖中可知，液晶顯示器^系 由複數行閘極線N i與複數列數據線M i互相交錯，並形成'一 具有複數個像素區丨〇之矩陣，其中每一個像素區丨〇係形成 在二相鄰之閘極線以及二相鄰之數據線之間，其内部具有 像素電極11、一薄膜電晶體1 2以及一輔助電容Cs。其中 薄膜電晶體1 2係做為控制像素電極π的開關元件，藉=# 制像素電極11的電壓以改變液晶分子（圖中未示）的^列^ 向，進而決定該像素區丨0的明暗，而輔助電容Cs則是在 =膜電晶Μ 12開啟時儲存電荷，並在㈣電晶體閉時 釋放電荷至像素電極丨丨，以避免液晶顯示器1 閃爍。 旦W知王 明，閱圖一所示，其係為傳統之主動式陣列液晶顯示 器1之像素區10平面圖，圖中像素區丨〇係位於二平行之閘 極線Ν以及二平行之數據線Μ所圍成之區域中， 的角落係設有一薄膜電晶體！ 2，其包括一間極=、素上 極122以及一汲極123,其中閘極121係與閘極線_連接， 汲極1 2 3則是與數據線μ相連接，在源極1 2 2與汲極i 2 3之間 則是設有通道（channel)可供電流流通。像素電極n係由200525219 V. Description of the invention (l)-[Technical field to which the invention belongs] The present invention relates to an active-array liquid crystal display, and more particularly, to an improvement in the structure of an active-array liquid crystal display and a manufacturing method thereof. [Prior art] J Refer to FIG. 1 ', which is a 4-effect circuit diagram of a conventional active-array liquid crystal display state. As can be seen from the equivalent circuit diagram, the liquid crystal display ^ is composed of a plurality of row gate lines N i and a plurality of column data lines M i interlaced with each other, and forms a matrix having a plurality of pixel regions, each of which is a pixel region. It is formed between two adjacent gate lines and two adjacent data lines, and has a pixel electrode 11, a thin film transistor 12 and an auxiliary capacitor Cs inside. The thin film transistor 12 is used as a switching element for controlling the pixel electrode π, and the voltage of the pixel electrode 11 is used to change the ^ column ^ direction of the liquid crystal molecules (not shown), thereby determining the pixel area. Brightness and darkness, while the auxiliary capacitor Cs stores the charge when the film transistor M 12 is turned on, and releases the charge to the pixel electrode when the transistor is turned off to avoid flickering of the liquid crystal display 1. Once Wang Ming is known, as shown in Figure 1, it is a plan view of the pixel area 10 of the traditional active-array liquid crystal display 1. The pixel area in the figure is located on two parallel gate lines N and two parallel data lines. In the area surrounded by M, there is a thin film transistor in the corner! 2, which includes a pole =, a top pole 122, and a drain 123, where the gate 121 is connected to the gate line _, and the drain 1 2 3 is connected to the data line μ, and the source 1 2 A channel is provided between 2 and the drain i 2 3 for current to flow. The pixel electrode n is formed by
200525219200525219
銦錫氧化物所構成之透 Conductive Thin F" 像素區1 0，其中像素電 相連接。輔助電容C颂 電極1 3係由不透光之金 並與閘極線N互相連接 明導電膜（IndiumTin Oxide m)，其設置在薄膜電晶體1 2以外之 極11係與薄膜電晶體1 2之源極1 2 2 是具有一第一電極13，其中該第一 屬所構成，例如铭、鉻、銷、钽， 要特別說明的是，在每 一遮光層（圖中未示），該遮 間設有開口之框型結構，其 11的周邊與遮光層的外框相 素電極1 1的中間與遮光層中 區，發光區的大小與像素電 ratio)有密切的關係，並且 質。 一個像素區1 〇的正上方均設有 光層（Black Matrix)係為一中 外框為遮蔽區，因此像素電極 對應處係為無效發光區，而像 間之開口相對應處係為發光 極11的開口率（Aperture g衫響到液晶顯示器的晝面品 點：’、、、而自知技術之主動式陣列液晶顯示器具有許多缺 於“ :::Ϊ::ί ”線發生斷裂時無法修補。由 境的影響(例二=過著':發 與該間極線相連接之 體=發=修補 影響到液晶顯示器之品質。 ，去毛揮作用’而 白★技術之結構設計的儲存電容值很古 :容：與面積成正比，s此，儲存電容的：電=於儲存 大’電荷儲存的效果也就越佳，⑮由於第— 積越 丁、馬不透Conductive Thin F < Pixel Area 10 made of indium tin oxide, where pixels are electrically connected. The auxiliary capacitor C is an electrode 13 made of opaque gold and interconnected with the gate line N. IndiumTin Oxide m is provided on the electrode 11 other than the thin film transistor 12 and the thin film transistor 1 2 The source electrode 1 2 2 has a first electrode 13 in which the first component is composed of, for example, chrome, pin, tantalum. It should be particularly noted that in each light-shielding layer (not shown in the figure), the An open frame structure is provided in the shelter, and the periphery of 11 is in the middle of the outer-frame pixel electrode 11 of the light-shielding layer and the middle region of the light-shielding layer. The size of the light-emitting region is closely related to the pixel electrical ratio. There is a light layer (Black Matrix) directly above a pixel area 10, which is a middle and outer frame as a shielding area. Therefore, the corresponding area of the pixel electrode is an invalid light emitting area, and the corresponding opening between the images is an light emitting electrode 11. (Aperture g-shirt rang to the day-to-day quality of LCD monitors: ',,, and self-knowledge technology's active array LCD monitors have many missing "::: Ϊ :: ί" lines that cannot be repaired when broken 。Affected by the environment (example two = overlying :: the body connected to the polar line = hair = repair affects the quality of the liquid crystal display., Dehairing effect ”and white ★ storage structure of the technical design of the storage capacitor The value is very ancient: capacity: proportional to the area, s, this, the storage capacitor's: electricity = large storage, the better the effect of charge storage, due to the first-Jaeger Ding, impervious
200525219 五、發明說明（3) 光之金屬層，若是增加第一 到像素電極的開口率。 c.習知技術之結構設計無法 耦合電容。由於像素電極與 在像素電極與數據線之間會 提高像素電極之開口率，像 常會越做越近，相對地，所 (因為電容值與距離成反比： 壓不均勻，進而影響到液晶 因此，對於從事主動式 發人員而言，莫不致力於解 提高產品的品質。 電極的面積，相對地也會影響 消除像素電極與數據線之間的 數據線之間具有電位差，因此 有耦合電容的產生，又，為了 素電極與數據線之間的距離通 產生之耦合電容也就越來越高 >，其結果將造成像素電極的電 顯示器之晝面品質。 陣列液晶顯示器相關領域之研 決習知技術之缺點，以期能夠 【發明内容】 本發明之目的在於提供一種主動式陣列液晶顯示器， 其可以在閘極線發生斷線時進行修補，以提高液晶顯示器 之良率。 本發明之另一目的在於提供一種主動式陣列液晶顯示 器，其可以在不影響像素電極之開口率的情形下提高儲存 電容，使液晶顯示器之晝面品質更佳。 曰曰 本發明之又一目的在於提供一種主動式陣列液晶顯示 器，其可以在像素電極與數據線之間提供遮蔽效應 (shielding effect)以避免產生搞合電容，進而提高液 顯示器之晝面品質。200525219 V. Description of the invention (3) If the metal layer of light increases the aperture ratio of the first to the pixel electrode. c. The structural design of the conventional technology cannot couple capacitors. Because the pixel electrode and the pixel electrode and the data line will increase the aperture ratio of the pixel electrode, it will get closer and closer as usual, because the capacitance value is inversely proportional to the distance: the pressure is not uniform, and then affect the liquid crystal, For those who are engaged in active hair development, they are committed to improving the quality of the product. The area of the electrode will also affect the elimination of the potential difference between the data line between the pixel electrode and the data line, so there is a coupling capacitor. In addition, the coupling capacitance generated for the distance between the plain electrode and the data line is getting higher and higher, and as a result, the daytime quality of the pixel electrode's electric display will be caused. Disadvantages of technology, in order to be able to [Summary of the invention] An object of the present invention is to provide an active array liquid crystal display, which can be repaired when the gate line is disconnected to improve the yield of the liquid crystal display. Another object of the present invention It is to provide an active-array liquid crystal display, which can be used without affecting the aperture ratio of the pixel electrode. The storage capacitor is improved to improve the daytime quality of the liquid crystal display. Another object of the present invention is to provide an active-array liquid crystal display, which can provide a shielding effect between the pixel electrode and the data line. Avoid creating capacitors, and then improve the quality of the daytime display of the liquid crystal display.
第7頁 200525219 I五、發明說明（4) 本發明所揭 基板，在玻璃基 之數據線，在上 出一個包含複數 相鄰之閘極線以 部均設有一薄膜 金屬圖 薄 極係設 設於第 是與像 電極， 接，其 一電極 又 金 之第一 本 時，只 金屬圖 第一電 與輔助 此 素電極 無效發 案。 膜電 於第 二金 素電 該第 設置 在適屬圖 電極 發明 要找 案之 極導 電容 外， 之周 光區 露之主動式陣列液晶顯示器包括：_ 板表面係設有複數行之閘極線以及複數 述互相交錯之閘極線與數據線中，係 個像素區之矩陣，其中像素區係形成在2 及二相鄰之數據線之間，每一個像素區： 電晶體、一像素電極、一輔助電容以及一 晶體 一金 屬層 極互 一電 之位 當的 案係 之缺 在主 出閘 二端 通， 之第 由於 圍， ，因 包括 屬層 ，其 相連 極係 置係 位置 設於 口互 動式 極線 進行 使原 一電 本發 該位 此不 一閘極、 並與閘極 中沒極係 接。此外 設於第一 與像素電 處設有一 第二金屬 相對應。 陣列液晶 斷裂所在 雷射焊接 本斷裂之 極的連接 明之輔助 置係為遮 會影響像 源極以及一汲極，其中閘 線互相連接，源極與汲極則 與數據線互相連接而源極則 ’輔助電容則是具有一第一 金屬層並且與閘極線互相連 極的周邊互相對應，其中第 缺口並开> 成一開放迴路。 層’其位置係與該輔助電容 顯不器之閘極線發生斷裂 之像素區，並對該像素區之 ’將金屬圖案與輔助電容之 閘極線二端，經由金屬圖案 ’再度形成導通。 電谷之第一電極係設置於像 光層所遮蔽之區域，係屬於 素電極之開口率，並可以增Page 7 200525219 I. Description of the invention (4) The substrate disclosed in the present invention is provided with a thin-film metal pattern on the glass-based data line, including a plurality of adjacent gate lines. When the first electrode is connected to the image electrode, and the first electrode is gold, only the first electricity of the metal figure and the auxiliary electrode are invalid. Membrane and second metallurgy should be installed outside of the conductive capacitor that is suitable for the picture electrode invention, and the active array liquid crystal display with the surrounding light area exposed includes: _ The surface of the board is provided with a plurality of rows of gate electrodes Lines and plural intersecting gate lines and data lines are a matrix of pixel regions, where the pixel regions are formed between 2 and two adjacent data lines, each pixel region: a transistor, a pixel electrode The lack of an auxiliary capacitor, a crystal, a metal layer, and an electric pole are connected at the two ends of the main gate. The reason is that the surrounding layer includes the subordinate layer, and the position of the connected pole system is set at The mouth-interactive polar line is carried out so that the original electric generator sends out the different gates and is connected to the non-gates in the gates. In addition, a second metal corresponding to the first pixel is provided at the first pixel. The auxiliary connection system of the laser welding electrode where the array liquid crystal is broken is shielded, which will affect the image source and a drain. The gate line is connected to each other, the source and drain are connected to the data line, and the source is 'The auxiliary capacitor has a first metal layer and the perimeters connected to each other of the gate lines, which correspond to each other, wherein the first gap is opened and formed into an open loop. The position of the layer ′ is a pixel region where the gate line of the auxiliary capacitor display is broken, and the metal pattern and the two ends of the gate line of the auxiliary capacitor are formed in the pixel region again through the metal pattern ′. The first electrode of the electric valley is set in the area shielded by the light layer, which belongs to the aperture ratio of the plain electrode, and can increase the
200525219200525219
加儲存電容。 又 於本务明之輔助電交 電極之周圍，且第_電極盥，广之第一電極係設置於像素 極的電位將維持固定，祐^二虽線互相連接，因此第一電 蔽效應，以避免像+ Φ朽^ f素電極與數據線之間形成遮 而提咼液晶顯示器之書面品 』座生耦口電今進 【實施方式】Add storage capacitor. It is also around the auxiliary electric cross electrode of this matter, and the potential of the first electrode is set at the pixel electrode, and the potential of the first electrode system that is set at the pixel electrode will remain fixed. Although the wires are connected to each other, the first electrical shielding effect is Avoiding the formation of the + + Φ ^ f element electrode and the data line to improve the written product of the LCD monitor "Zhengsheng couplet electricity Jinjin [Implementation]
示5| :像：^ 7η: τ ’其係為本發明之主動式陣列液晶顯 ♦、面-ΐ : 圖’液晶顯示器包括-玻璃基板，其 =置，數行之閘極線Ν以及複數列之數據線μ，其中在 势個禮2 乂錯之閘極線Ν與數據線肿，係形成一個包含複 ，素區30(plxei region)之矩陣，像素區3〇係設置在 一相郇之閘極線N以及二相鄰之數據線μ之間，每一個像素 區30内部均設有一薄膜電晶體3卜一像素電極32、一輔助 電容Cs以及一金屬圖案34。Figure 5 |: Image: ^ 7η: τ 'It is the active array liquid crystal display of the present invention, and the surface -ΐ: Figure' The liquid crystal display includes a glass substrate, which is set to a number of gate lines N and a plurality of The data lines μ in the column, in which the gate lines N and the data lines are swollen, form a matrix including complex and prime regions 30 (plxei region), and the pixel region 30 is arranged in a phase. Between the gate line N and two adjacent data lines μ, a thin film transistor 3b, a pixel electrode 32, an auxiliary capacitor Cs, and a metal pattern 34 are provided inside each pixel area 30.
/專膜電晶體3 1包括一閘極3 1 1、一源極3 1 2以及一汲極 3 1 3 ’其中閘極3 1 1係設於第一金屬層並與閘極線N互相連 接’源極3 1 2與汲極3 1 3則設於第二金屬層，其中沒極3 1 3 係與數據線Μ互相連接而源極3 1 2則是與像素電極互相連 接。輔助電容C s則是具有一第一電極3 3，該第一電極3 3係 設於第一金屬層並且與閘極線Ν互相連接，其位置係與像 素電極3 2的周邊互相對應，其中第一電極3 3係為一具有缺 口 3 3 1之開放迴路。金屬圖案3 4係設於第二金屬層，其位/ Special film transistor 3 1 includes a gate electrode 3 1 1, a source electrode 3 1 2 and a drain electrode 3 1 3 ′, wherein the gate electrode 3 1 1 is provided on the first metal layer and is connected to the gate line N. The source 3 1 2 and the drain 3 1 3 are disposed on the second metal layer, wherein the electrode 3 1 3 is connected to the data line M and the source 3 1 2 is connected to the pixel electrode. The auxiliary capacitor C s has a first electrode 3 3, which is disposed on the first metal layer and interconnected with the gate line N, and its position corresponds to the periphery of the pixel electrode 32, where The first electrode 3 3 is an open circuit with a gap 3 3 1. The metal pattern 3 4 is disposed on the second metal layer.
第9頁 200525219Page 9 200525219
五、發明說明（6) 置係與第一電極33之缺口 331互相對應，其中金屬圖案34 的形狀大於第一電極3 3之缺口 331。 請參閱圖四所示，其係為栓上本發明之主動式陣列液 晶顯示器對斷裂之閘極線進行修補之示意圖，在製造過程 中閘極線N可此因為發生斷裂而形成斷路，使得閘極線^ 之電流無法流到下一個像素區3〇a。此時，只要偵測出閘 極線N發生斷裂所在之像素區3〇，並對該像素區3〇之金屬 圖案34的二端（P卜P2)進行雷射焊接，使金屬圖案34與輔 助電容Cs之第一電極33形成導通，將可以使原本斷裂之 閘極線N的二端，因為金屬圖案34與第一電極33的連接再 度形成電流（I )導通。 此外’由於本發明之輔助電容c s之第一電極3 3係設置 於像素電極3 2之周圍，其位置恰為遮光層所遮蔽之區域， 屬於無效發光區，因此，第一電極3 3設置在該處並不會影 響像素電極3 2的開口率，因此，本發明不僅可以增加第一 電極33的面積，更可以提高儲存電容Cs的值。 又，由於本發明之輔助電容Cs之第一電極33係設置於 像素電極3 2之周圍，且第一電極3 3係與閘極線n互相連 接’因此第一電極3 3的電位值係為固定，其可以在像素電 極3 2與數據線μ之間形成遮敗效應（shieiding effect)， 以避免像素電極3 2受到數據線Μ的影響而產生_合電容， 進而提高液晶顯示器之晝面品質。 請參閱圖五所示，其係為本發明在圖三之A — A，剖面 圖’圖中係以玻璃基板5 0做為底材，在玻璃基板5 〇表面之5. Description of the invention (6) The arrangement corresponds to the notch 331 of the first electrode 33, wherein the shape of the metal pattern 34 is larger than the notch 331 of the first electrode 33. Please refer to FIG. 4, which is a schematic diagram of repairing a broken gate line by plugging the active array liquid crystal display of the present invention. During the manufacturing process, the gate line N may be broken due to the breakage, which causes the gate to open. The current of the epipolar line ^ cannot flow to the next pixel area 30a. At this time, as long as the pixel region 30 where the gate line N is broken is detected, and the two ends (P2) of the metal pattern 34 in the pixel region 30 are laser welded, the metal pattern 34 and the auxiliary When the first electrode 33 of the capacitor Cs is turned on, the two ends of the originally broken gate line N can be turned on because the connection between the metal pattern 34 and the first electrode 33 forms a current (I) again. In addition, since the first electrode 3 3 of the auxiliary capacitor cs of the present invention is disposed around the pixel electrode 32, its position is just the area shielded by the light-shielding layer, which belongs to the invalid light-emitting area. Therefore, the first electrode 33 is disposed at This does not affect the aperture ratio of the pixel electrode 32. Therefore, the present invention can not only increase the area of the first electrode 33, but also increase the value of the storage capacitor Cs. In addition, since the first electrode 33 of the auxiliary capacitor Cs of the present invention is disposed around the pixel electrode 32, and the first electrode 33 is connected to the gate line n, the potential value of the first electrode 33 is Fixed, it can form a shieding effect between the pixel electrode 32 and the data line μ, so as to avoid the pixel electrode 32 from being affected by the data line M to generate a combined capacitance, thereby improving the daytime quality of the liquid crystal display . Please refer to FIG. 5, which is a cross-sectional view of the present invention in FIG.
第10頁 200525219 五、發明說明（7) 第一金屬層的二側係分別設有一第一電極33,在第一電極 3 3的表面則是覆蓋有一第一絕緣層5丨，此外，在第一絕緣 層51的上方則是形成有一第二金屬層，其中 包括二數據線Μ分別設於第一絕緣層51之上方二^則\又9/、 在第二金屬層的上方係形成一保護層52，該保1 蔓層52的上 方中間區域則是形成有一像素電極32，其中像素電極32的 周圍係對應於第一電極33的上方。由圖中可知，洛第一電 極33的電位值固定時，其所產生之遮蔽效應確實;以避免 像素電極32與數據線Μ之間產生耦合電容，進而使液晶顯 示器的晝面維持穩定。 請參閱圖六所示’其係為本發明在圖三之Β-Β，剖面 圖’圖中在玻璃基板5 0表面之第一金屬層係分別形成有一 閘極3 11以及一第一電極3 3，其中第一電極3 3係分成二 段，其中間係形成一缺口 3 3 1，在閘極3 1 1以及第一電極3 3 的表面則覆蓋有一第一絕緣層5 1，在閘極3 1 1之第一絕緣 層51上方則是形成一非晶石夕通道53(amorphous silicon channel)，而在該非晶矽通道5 3的二側則分別形成一摻雜 半導體層 54(doped semiconductor layer)。 在摻雜半導體層5 4以及第一絕緣層5 1的上方係形成有 一第二金屬層，該第二金屬層係包括一汲極3 1 3、一源極 3 1 2、一金屬圖案3 4以及二數據線Μ，其中汲極3 1 3與源極 3 1 2係分別形成於非晶矽通道53之二側以及摻雜半導體層、 5 4之上方，金屬圖案3 4則是形成於第一絕緣層5 1之上方^ 對應至第一電極3 3之缺口 3 3 1，而數據線Μ則是設於第一 &Page 10 200525219 V. Description of the invention (7) Two sides of the first metal layer are respectively provided with a first electrode 33, and the surface of the first electrode 33 is covered with a first insulating layer 5 丨. A second metal layer is formed above an insulating layer 51, which includes two data lines M respectively disposed above the first insulating layer 51. Then a protection is formed above the second metal layer. A layer 52 is formed in the upper middle region of the protection layer 52 with a pixel electrode 32, and the periphery of the pixel electrode 32 corresponds to above the first electrode 33. It can be seen from the figure that when the potential value of the first electrode 33 is fixed, the shielding effect produced by the first electrode 33 is fixed; the coupling capacitance between the pixel electrode 32 and the data line M is avoided, and the daytime surface of the liquid crystal display is maintained stable. Please refer to FIG. 6, which is a gate electrode 3 11 and a first electrode 3 of the first metal layer on the surface of the glass substrate 50 in the diagram of the present invention in FIG. 3, wherein the first electrode 3 3 is divided into two sections, and a gap 3 3 1 is formed in the middle thereof. The surface of the gate 3 1 1 and the first electrode 3 3 is covered with a first insulating layer 5 1. Above the first insulating layer 51 of 3 1 1 is formed an amorphous silicon channel 53 (amorphous silicon channel), and a doped semiconductor layer 54 (doped semiconductor layer 54) is formed on both sides of the amorphous silicon channel 53. ). A second metal layer is formed over the doped semiconductor layer 54 and the first insulating layer 51. The second metal layer includes a drain 3 1 3, a source 3 1 2, and a metal pattern 3 4 And two data lines M, wherein the drain 3 1 3 and the source 3 1 2 are respectively formed on the two sides of the amorphous silicon channel 53 and above the doped semiconductor layer 5 4, and the metal pattern 3 4 is formed on the first An insulating layer 5 1 is provided above the notch 3 3 1 corresponding to the first electrode 3 3, and the data line M is provided at the first &
第11頁 200525219 五、發明說明（8) 緣層5 1之上方二側，第二金屬層的表面覆蓋有一保護層 5 2，其中該保護層5 2在源極3 1 2上方係設有一導電栓5 5， 像素電極3 2係形成於該保護層5 2的表面並透過導電栓5 5與 源極3 1 2互相連接。 當然，以上所述僅為本發明之主動式陣列液晶顯示器 之較佳實施例，其並非用以限制本發明之實施範圍，任何 熟習該項技藝者在不違背本發明之精神所做之修改均應屬 於本發明之範圍，因此本發明之保護範圍當以下列所述之 申請專利範圍做為依據。Page 11 200525219 V. Description of the invention (8) Two sides above the edge layer 51, the surface of the second metal layer is covered with a protective layer 52, wherein the protective layer 52 is provided with a conductive layer above the source electrode 3 12 The plug 5 5 is formed on the surface of the protective layer 5 2 and is connected to the source 3 1 2 through the conductive plug 5 5. Of course, the above description is only a preferred embodiment of the active array liquid crystal display of the present invention, and is not intended to limit the scope of implementation of the present invention. Any modifications made by those skilled in the art without departing from the spirit of the present invention are It should belong to the scope of the present invention, so the protection scope of the present invention should be based on the scope of patent application described below.
第12頁 200525219 圖式簡單說明 圖式之簡要說明： 圖一係為習知技術之主 圖， 圖二係為習知技術之主 圖； 圖三係為本發明之主動 圖， 圖四係為利用本發明之 極線進行修補之示意圖 圖五係為本發明在圖三 圖六係為本發明在圖三 圖式之圖號說明： 卜液晶顯示器 11〜像素電極 121〜閘極 1 2 3〜沒極 3 0〜像素區 311〜閘極 3 1 3〜汲極 3 3〜第一電極 3 4〜金屬圖案 5卜第一絕緣層 5 3〜非晶矽通道 5 5〜導電栓 動式陣列液晶顯示器之等效電路 動式陣列液晶顯示器之像素區平面 式陣列液晶顯示器之像素區平面 主動式陣列液晶顯示器對斷裂之閘 之A _ A ’剖面圖； 之B - B ’剖面圖； 1 0〜像素區 12〜薄膜電晶體 1 2 2〜源極 13〜第一電極 3卜薄膜電晶體 3 1 2〜源極 3 2〜像素電極 3 3 1〜缺口 5 0〜玻璃基板 5 2〜保護層 54〜摻雜半導體層 Μ〜數據線Page 12 200525219 Brief description of the diagram Brief description of the diagram: Figure 1 is the main diagram of conventional technology, Figure 2 is the main diagram of conventional technology; Figure 3 is the active diagram of the present invention, and Figure 4 is Schematic diagram of repairing by using the epipolar line of the present invention. Figure 5 is the invention in Figure 3 and Figure 6 is the drawing number of the invention in Figure 3. Figure: LCD display 11 ~ pixel electrode 121 ~ gate electrode 1 2 3 ~ Pole 3 0 ~ Pixel area 311 ~ Gate 3 1 3 ~ Drain 3 3 ~ First electrode 3 4 ~ Metal pattern 5 1 First insulating layer 5 3 ~ Amorphous silicon channel 5 5 ~ Conductive pin-action array liquid crystal The equivalent circuit of the display. Pixel area of the moving-array liquid crystal display. Flat pixel array of the liquid crystal display. A_A 'sectional view of the broken gate of the active area liquid crystal display; B-B' sectional view; 1 0 ~ Pixel area 12 ~ thin film transistor 1 2 2 ~ source 13 ~ first electrode 3 thin film transistor 3 1 2 ~ source 3 2 ~ pixel electrode 3 3 1 ~ notch 5 0 ~ glass substrate 5 2 ~ protective layer 54 ~ Doped semiconductor layer M ~ Data line
第13頁 200525219 I〜電流 圖式簡單說明 N〜閘極線 Cs〜輔助電容 11111 第14頁Page 13 200525219 I ~ Current diagram brief description N ~ Gate line Cs ~ Auxiliary capacitor 11111 Page 14
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93101994A TW200525219A (en) | 2004-01-29 | 2004-01-29 | Active array liquid crystal display |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW93101994A TW200525219A (en) | 2004-01-29 | 2004-01-29 | Active array liquid crystal display |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200525219A true TW200525219A (en) | 2005-08-01 |
| TWI299416B TWI299416B (en) | 2008-08-01 |
Family
ID=45069678
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW93101994A TW200525219A (en) | 2004-01-29 | 2004-01-29 | Active array liquid crystal display |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW200525219A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9459502B2 (en) | 2013-05-27 | 2016-10-04 | Japan Display Inc. | Liquid crystal display device |
-
2004
- 2004-01-29 TW TW93101994A patent/TW200525219A/en not_active IP Right Cessation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9459502B2 (en) | 2013-05-27 | 2016-10-04 | Japan Display Inc. | Liquid crystal display device |
| TWI563333B (en) * | 2013-05-27 | 2016-12-21 | Japan Display Inc | Liquid crystal display device and display device |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI299416B (en) | 2008-08-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104880871B (en) | Display panel and display device | |
| US5517342A (en) | Liquid crystal display having additional capacitors formed from pixel electrodes and a method for manufacturing the same | |
| JP4085170B2 (en) | Liquid crystal display | |
| CN100438048C (en) | Electrode structure in flat panel display, and fabricating method | |
| CN104133312B (en) | For the array base palte of liquid crystal display device | |
| TW200817757A (en) | Pixel structure and repair method thereof | |
| TWI226712B (en) | Pixel structure and fabricating method thereof | |
| TW200937089A (en) | Flat display device and method for manufacturing the same | |
| JP3307144B2 (en) | Display device | |
| WO2015074332A1 (en) | Liquid crystal display panel | |
| JP2001083540A (en) | Production of electrode structure of wide view angle liquid crystal display | |
| TW200302384A (en) | Liquid crystal display device | |
| TW200807722A (en) | LTPS-LCD structure and method for manufacturing the same | |
| WO2013104300A1 (en) | Array substrate and display device comprising same | |
| JP2014056237A (en) | Array substrate, manufacturing method for the same, and display device | |
| TWI474092B (en) | Pixel structure and manufacturing method thereof | |
| WO2018054098A1 (en) | Array panel and manufacturing method thereof, display panel, and display apparatus | |
| TWI239651B (en) | Manufacturing method of a thin film transistor-liquid crystal display | |
| TW200410182A (en) | Pixel having transparent structure and reflective structure | |
| US20080251797A1 (en) | Array substrate and method for manufacturing the same | |
| TW201042341A (en) | Active array substrate, liquid crystal display panel and method for manufacturing the same | |
| TW200403859A (en) | Thin film transistor array panel | |
| CN101872770A (en) | Pixel unit, coplane conversion type liquid crystal display device and manufacturing method | |
| TWI335483B (en) | Pixel structure and liquid crystal display panel | |
| JP2002116712A (en) | Display device and its manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |