TW200516651A - Manufacturing method of nano-dot floating gate, nano-dot flash memory and manufacturing method thereof - Google Patents

Manufacturing method of nano-dot floating gate, nano-dot flash memory and manufacturing method thereof

Info

Publication number
TW200516651A
TW200516651A TW092130674A TW92130674A TW200516651A TW 200516651 A TW200516651 A TW 200516651A TW 092130674 A TW092130674 A TW 092130674A TW 92130674 A TW92130674 A TW 92130674A TW 200516651 A TW200516651 A TW 200516651A
Authority
TW
Taiwan
Prior art keywords
nano
manufacturing
dot
floating gate
flash memory
Prior art date
Application number
TW092130674A
Other languages
Chinese (zh)
Other versions
TWI231531B (en
Inventor
Ting-Chang Chang
Shuo-Ting Yan
Po-Tsun Liu
Chi-Wen Chen
Tsung-Ming Tsai
Ya Hsiang Tai
Simon M Sze
Original Assignee
Univ Nat Sun Yat Sen
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Nat Sun Yat Sen filed Critical Univ Nat Sun Yat Sen
Priority to TW92130674A priority Critical patent/TWI231531B/en
Priority to US10/904,294 priority patent/US20050095786A1/en
Application granted granted Critical
Publication of TWI231531B publication Critical patent/TWI231531B/en
Publication of TW200516651A publication Critical patent/TW200516651A/en
Priority to US11/162,646 priority patent/US20060003531A1/en
Priority to US11/461,780 priority patent/US7235443B2/en

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  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

A manufacturing method of nano-dot floating gate is provided. The method includes the steps of forming a tunneling dielectric layer on a substrate, forming a semiconductor silicide layer on the tunneling dielectric layer, oxidizing the semiconductor silicide layer to separating out semiconductor component in the semiconductor silicide layer and forming semiconductor nano-dot on the tunneling dielectric layer.
TW92130674A 2003-11-03 2003-11-03 Manufacturing method of nano-dot floating gate, nano-dot flash memory and manufacturing method thereof TWI231531B (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
TW92130674A TWI231531B (en) 2003-11-03 2003-11-03 Manufacturing method of nano-dot floating gate, nano-dot flash memory and manufacturing method thereof
US10/904,294 US20050095786A1 (en) 2003-11-03 2004-11-03 Non-volatile memory and method of manufacturing floating gate
US11/162,646 US20060003531A1 (en) 2003-11-03 2005-09-18 Non-volatile memory and method of manufacturing floating gate
US11/461,780 US7235443B2 (en) 2003-11-03 2006-08-02 Non-volatile memory and method of manufacturing floating gate

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW92130674A TWI231531B (en) 2003-11-03 2003-11-03 Manufacturing method of nano-dot floating gate, nano-dot flash memory and manufacturing method thereof

Publications (2)

Publication Number Publication Date
TWI231531B TWI231531B (en) 2005-04-21
TW200516651A true TW200516651A (en) 2005-05-16

Family

ID=36121973

Family Applications (1)

Application Number Title Priority Date Filing Date
TW92130674A TWI231531B (en) 2003-11-03 2003-11-03 Manufacturing method of nano-dot floating gate, nano-dot flash memory and manufacturing method thereof

Country Status (1)

Country Link
TW (1) TWI231531B (en)

Also Published As

Publication number Publication date
TWI231531B (en) 2005-04-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees