TW200515492A - Method of fabricating source/drain region - Google Patents
Method of fabricating source/drain regionInfo
- Publication number
- TW200515492A TW200515492A TW092128659A TW92128659A TW200515492A TW 200515492 A TW200515492 A TW 200515492A TW 092128659 A TW092128659 A TW 092128659A TW 92128659 A TW92128659 A TW 92128659A TW 200515492 A TW200515492 A TW 200515492A
- Authority
- TW
- Taiwan
- Prior art keywords
- material layer
- drain region
- source
- substrate
- region
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 abstract 6
- 239000000758 substrate Substances 0.000 abstract 4
- 238000000034 method Methods 0.000 abstract 3
- 238000002513 implantation Methods 0.000 abstract 2
- 238000005468 ion implantation Methods 0.000 abstract 2
- 238000005229 chemical vapour deposition Methods 0.000 abstract 1
Landscapes
- Insulated Gate Type Field-Effect Transistor (AREA)
- Semiconductor Memories (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A method of fabricating a source/drain region is described. A first patterned material layer is formed on a substrate to expose a portion of the substrate. A chemical vapor deposition process is performed to form a conformal second material layer on the surfaces of the substrate and the first material layer. A first ion implantation process is performed to form a deeply doped region in the substrate by using the second material layer as an implantation mask. After removing the second material layer, a second ion implantation process is performed to form a shallow doped region at two sides of the deeply doped region by using the first material layer as an implantation mask. Since the source/drain region is composed of the deeply doped region and the shallow doped region, the resistance of the source/drain region can be reduced, and punch-through between adjacent the source region and the drain region can also be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92128659A TWI220273B (en) | 2003-10-16 | 2003-10-16 | Method of fabricating source/drain region |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW92128659A TWI220273B (en) | 2003-10-16 | 2003-10-16 | Method of fabricating source/drain region |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TWI220273B TWI220273B (en) | 2004-08-11 |
| TW200515492A true TW200515492A (en) | 2005-05-01 |
Family
ID=34076666
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW92128659A TWI220273B (en) | 2003-10-16 | 2003-10-16 | Method of fabricating source/drain region |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TWI220273B (en) |
-
2003
- 2003-10-16 TW TW92128659A patent/TWI220273B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| TWI220273B (en) | 2004-08-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MK4A | Expiration of patent term of an invention patent |