TW200514285A - Nitride semiconductro; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof - Google Patents
Nitride semiconductro; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereofInfo
- Publication number
- TW200514285A TW200514285A TW093129991A TW93129991A TW200514285A TW 200514285 A TW200514285 A TW 200514285A TW 093129991 A TW093129991 A TW 093129991A TW 93129991 A TW93129991 A TW 93129991A TW 200514285 A TW200514285 A TW 200514285A
- Authority
- TW
- Taiwan
- Prior art keywords
- light
- layer
- barrier
- barrier sublayer
- emitting
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title 1
- 230000004888 barrier function Effects 0.000 abstract 7
- 239000000758 substrate Substances 0.000 abstract 2
- 230000006866 deterioration Effects 0.000 abstract 1
- 230000036962 time dependent Effects 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02455—Group 13/15 materials
- H01L21/02458—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02488—Insulating materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02505—Layer structure consisting of more than two layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
- H01L21/0254—Nitrides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02579—P-type
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
- H01L33/325—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen characterised by the doping materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/04—MOCVD or MOVPE
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/3407—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers characterised by special barrier layers
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Electromagnetism (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003344599 | 2003-10-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200514285A true TW200514285A (en) | 2005-04-16 |
TWI252595B TWI252595B (en) | 2006-04-01 |
Family
ID=36284180
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW093129991A TWI252595B (en) | 2003-10-02 | 2004-10-01 | Nitride semiconductor; light-emitting device, light-emitting diode, laser device and lamp using the semiconductor; and production methods thereof |
Country Status (7)
Country | Link |
---|---|
US (1) | US7488971B2 (zh) |
EP (1) | EP1668709B1 (zh) |
JP (1) | JP2011238971A (zh) |
KR (1) | KR100884288B1 (zh) |
CN (1) | CN100446281C (zh) |
TW (1) | TWI252595B (zh) |
WO (1) | WO2005034253A1 (zh) |
Families Citing this family (20)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100482511B1 (ko) * | 2004-02-05 | 2005-04-14 | 에피밸리 주식회사 | Ⅲ-질화물계 반도체 발광소자 |
KR100456063B1 (ko) | 2004-02-13 | 2004-11-10 | 에피밸리 주식회사 | Ⅲ-질화물 반도체 발광소자 |
KR100486177B1 (ko) | 2004-03-25 | 2005-05-06 | 에피밸리 주식회사 | Ⅲ-질화물 반도체 발광소자 |
EP1904839A1 (en) * | 2005-07-20 | 2008-04-02 | Smiths Group plc | Detection systems |
EP1930485A4 (en) * | 2005-08-25 | 2010-06-09 | Sumitomo Electric Industries | METHOD FOR PRODUCING GAXIN 1 -XN (0 X 1) CRYSTAL, GAXIN 1 -XN (0 X 1) CRYSTAL SUBSTRATE, METHOD FOR PRODUCING GAN CRYSTAL, GAN CRYSTAL SUBSTRATE AND PRODUCT |
US9157169B2 (en) * | 2005-09-14 | 2015-10-13 | International Rectifier Corporation | Process for manufacture of super lattice using alternating high and low temperature layers to block parasitic current path |
WO2007040295A1 (en) * | 2005-10-04 | 2007-04-12 | Seoul Opto Device Co., Ltd. | (al, ga, in)n-based compound semiconductor and method of fabricating the same |
US9406505B2 (en) * | 2006-02-23 | 2016-08-02 | Allos Semiconductors Gmbh | Nitride semiconductor component and process for its production |
JP2008218740A (ja) * | 2007-03-05 | 2008-09-18 | Showa Denko Kk | 窒化ガリウム系化合物半導体発光素子の製造方法 |
US7994066B1 (en) * | 2007-10-13 | 2011-08-09 | Luxtera, Inc. | Si surface cleaning for semiconductor circuits |
JP2010021290A (ja) * | 2008-07-09 | 2010-01-28 | Sumitomo Electric Ind Ltd | 量子井戸構造の製造方法 |
JP2010123920A (ja) * | 2008-10-20 | 2010-06-03 | Sumitomo Electric Ind Ltd | 窒化物系半導体発光素子を作製する方法、及びエピタキシャルウエハを作製する方法 |
JP5394717B2 (ja) * | 2008-12-15 | 2014-01-22 | 日本オクラロ株式会社 | 窒化物半導体光素子の製造方法 |
TWI362772B (en) * | 2009-05-07 | 2012-04-21 | Lextar Electronics Corp | Fabrication method of light emitting diode |
JP2011054935A (ja) * | 2009-06-19 | 2011-03-17 | Rohm & Haas Electronic Materials Llc | ドーピング方法 |
CN103915535A (zh) * | 2012-12-31 | 2014-07-09 | 比亚迪股份有限公司 | 一种量子阱发光层及其形成方法 |
KR102223037B1 (ko) * | 2014-10-01 | 2021-03-05 | 삼성전자주식회사 | 반도체 발광소자 제조방법 |
CN106299038B (zh) * | 2015-06-04 | 2018-08-17 | 东莞市中镓半导体科技有限公司 | 一种制备具有掺杂浓度及Al组分阶梯式变化的p型AlGaN/AlInGaN电子阻挡层近紫外LED的方法 |
CN106328771B (zh) * | 2015-07-04 | 2018-08-17 | 东莞市中镓半导体科技有限公司 | 一种在金属氮化镓复合衬底上外延无裂纹高晶体质量led外延层的方法 |
CN109065678B (zh) * | 2018-06-20 | 2020-04-10 | 华灿光电股份有限公司 | 一种发光二极管外延片及其制备方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3740744B2 (ja) * | 1996-07-12 | 2006-02-01 | ソニー株式会社 | 半導体の成長方法 |
JP3304787B2 (ja) * | 1996-09-08 | 2002-07-22 | 豊田合成株式会社 | 半導体発光素子及びその製造方法 |
US5831277A (en) * | 1997-03-19 | 1998-11-03 | Northwestern University | III-nitride superlattice structures |
US5926726A (en) * | 1997-09-12 | 1999-07-20 | Sdl, Inc. | In-situ acceptor activation in group III-v nitride compound semiconductors |
JP2000156544A (ja) * | 1998-09-17 | 2000-06-06 | Matsushita Electric Ind Co Ltd | 窒化物半導体素子の製造方法 |
JP3705047B2 (ja) * | 1998-12-15 | 2005-10-12 | 日亜化学工業株式会社 | 窒化物半導体発光素子 |
JP3460641B2 (ja) * | 1999-09-28 | 2003-10-27 | 日亜化学工業株式会社 | 窒化物半導体素子 |
US6577073B2 (en) * | 2000-05-31 | 2003-06-10 | Matsushita Electric Industrial Co., Ltd. | Led lamp |
US6586762B2 (en) * | 2000-07-07 | 2003-07-01 | Nichia Corporation | Nitride semiconductor device with improved lifetime and high output power |
JP4724901B2 (ja) * | 2000-07-21 | 2011-07-13 | パナソニック株式会社 | 窒化物半導体の製造方法 |
JP2002133925A (ja) * | 2000-10-25 | 2002-05-10 | Sanken Electric Co Ltd | 蛍光カバー及び半導体発光装置 |
JP2003229645A (ja) | 2002-01-31 | 2003-08-15 | Nec Corp | 量子井戸構造およびそれを用いた半導体素子ならびに半導体素子の製造方法 |
-
2004
- 2004-10-01 WO PCT/JP2004/014873 patent/WO2005034253A1/en active Application Filing
- 2004-10-01 TW TW093129991A patent/TWI252595B/zh active
- 2004-10-01 US US10/574,202 patent/US7488971B2/en active Active
- 2004-10-01 EP EP04773679.8A patent/EP1668709B1/en active Active
- 2004-10-01 KR KR1020067006481A patent/KR100884288B1/ko active IP Right Grant
- 2004-10-01 CN CNB2004800288333A patent/CN100446281C/zh active Active
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2011
- 2011-08-24 JP JP2011182842A patent/JP2011238971A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
EP1668709B1 (en) | 2019-05-01 |
KR20060076312A (ko) | 2006-07-04 |
CN1864277A (zh) | 2006-11-15 |
JP2011238971A (ja) | 2011-11-24 |
TWI252595B (en) | 2006-04-01 |
US20070012932A1 (en) | 2007-01-18 |
CN100446281C (zh) | 2008-12-24 |
US7488971B2 (en) | 2009-02-10 |
EP1668709A1 (en) | 2006-06-14 |
KR100884288B1 (ko) | 2009-02-18 |
WO2005034253A1 (en) | 2005-04-14 |
EP1668709A4 (en) | 2010-07-28 |
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