TW200512542A - Positive photoresist composition - Google Patents

Positive photoresist composition

Info

Publication number
TW200512542A
TW200512542A TW093118851A TW93118851A TW200512542A TW 200512542 A TW200512542 A TW 200512542A TW 093118851 A TW093118851 A TW 093118851A TW 93118851 A TW93118851 A TW 93118851A TW 200512542 A TW200512542 A TW 200512542A
Authority
TW
Taiwan
Prior art keywords
photoresist composition
suppressing
coating method
film thickness
occurring
Prior art date
Application number
TW093118851A
Other languages
Chinese (zh)
Other versions
TWI299818B (en
Inventor
Kimitaka Morio
Tetsuya Kato
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200512542A publication Critical patent/TW200512542A/en
Application granted granted Critical
Publication of TWI299818B publication Critical patent/TWI299818B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Silicon Polymers (AREA)

Abstract

A positive photoresist composition is provided which can solve at least one of the following problems, preferably solve all of the problems of suppressing uneven hazes occurring when a photoresist is coated on a highly reflective metal film; suppressing drip mark formation in the coating method of spinning after center-dropping the resist composition and increasing uniformity of the resist film thickness; and suppressing linear marks occurring in the discharge nozzle-coating method and increasing uniformity of the resist film thickness. The photoresist composition contains (A) an alkali soluble resin, (B) a naphthoquinonediazido group-containing compound, (D) an organic solvent, and (E) a polyester modified polydialkylsiloxane type surfactant containing special repeating units.
TW093118851A 2003-09-30 2004-06-28 Positive photoresist composition TWI299818B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003340033A JP4121925B2 (en) 2003-09-30 2003-09-30 Positive photoresist composition

Publications (2)

Publication Number Publication Date
TW200512542A true TW200512542A (en) 2005-04-01
TWI299818B TWI299818B (en) 2008-08-11

Family

ID=34535051

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093118851A TWI299818B (en) 2003-09-30 2004-06-28 Positive photoresist composition

Country Status (4)

Country Link
JP (1) JP4121925B2 (en)
KR (1) KR100642026B1 (en)
CN (1) CN1291277C (en)
TW (1) TWI299818B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409586B (en) * 2007-07-24 2013-09-21 Tokyo Ohka Kogyo Co Ltd Positive resist composition for producing a liquid crystal element and resist pattern formation method

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6443435A (en) * 1987-08-11 1989-02-15 Minolta Camera Kk Paper skew detecting device
JP2009151266A (en) * 2007-11-29 2009-07-09 Jsr Corp Positive radiation-sensitive resin composition
JP5507938B2 (en) 2008-10-01 2014-05-28 東京応化工業株式会社 Photosensitive resin composition for color filter, color filter, and liquid crystal display
KR101632965B1 (en) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 Photoresist composition and method of fabricating thin film transistor substrate
TWI465851B (en) * 2013-02-22 2014-12-21 Chi Mei Corp Positive photosensitive resin composition and method for forming patterns by using the same
TWI490653B (en) * 2013-09-10 2015-07-01 Chi Mei Corp Positive photosensitive resin composition and method for forming patterns by using the same
JP6302643B2 (en) * 2013-11-08 2018-03-28 東京応化工業株式会社 Positive resist composition, resist pattern forming method, pattern forming method comprising metal layer, and through electrode manufacturing method
JP6983059B2 (en) * 2017-12-26 2021-12-17 信越化学工業株式会社 Method for Producing Dihydroxynaphthalene Condensate and Dihydroxynaphthalene Condensate

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62209126A (en) 1986-03-11 1987-09-14 Toshiba Corp Epoxy resin composition for sealing semiconductor device
JPS6334540A (en) 1986-07-30 1988-02-15 Mitsubishi Chem Ind Ltd Positive type photoresist composition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI409586B (en) * 2007-07-24 2013-09-21 Tokyo Ohka Kogyo Co Ltd Positive resist composition for producing a liquid crystal element and resist pattern formation method

Also Published As

Publication number Publication date
JP2005107131A (en) 2005-04-21
KR20050031865A (en) 2005-04-06
TWI299818B (en) 2008-08-11
CN1603955A (en) 2005-04-06
CN1291277C (en) 2006-12-20
KR100642026B1 (en) 2006-11-02
JP4121925B2 (en) 2008-07-23

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees