TW200512539A - Positive photoresist composition for discharge nozzle-coating method and formation method of resist pattern - Google Patents

Positive photoresist composition for discharge nozzle-coating method and formation method of resist pattern

Info

Publication number
TW200512539A
TW200512539A TW093122993A TW93122993A TW200512539A TW 200512539 A TW200512539 A TW 200512539A TW 093122993 A TW093122993 A TW 093122993A TW 93122993 A TW93122993 A TW 93122993A TW 200512539 A TW200512539 A TW 200512539A
Authority
TW
Taiwan
Prior art keywords
photoresist composition
positive photoresist
resist pattern
discharge nozzle
coating method
Prior art date
Application number
TW093122993A
Other languages
Chinese (zh)
Other versions
TWI326798B (en
Inventor
Kimitaka Morio
Tetsuya Kato
Tetsuya Nakajima
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200512539A publication Critical patent/TW200512539A/en
Application granted granted Critical
Publication of TWI326798B publication Critical patent/TWI326798B/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L61/00—Compositions of condensation polymers of aldehydes or ketones; Compositions of derivatives of such polymers
    • C08L61/04—Condensation polymers of aldehydes or ketones with phenols only
    • C08L61/06—Condensation polymers of aldehydes or ketones with phenols only of aldehydes with phenols
    • C08L61/14—Modified phenol-aldehyde condensates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/0226—Quinonediazides characterised by the non-macromolecular additives
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G03F7/0236—Condensation products of carbonyl compounds and phenolic compounds, e.g. novolak resins
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • G03F7/0397—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition the macromolecular compound having an alicyclic moiety in a side chain
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0752—Silicon-containing compounds in non photosensitive layers or as additives, e.g. for dry lithography

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

A positive photoresist composition is provided which is suitable for use in resist coating by discharge-nozzle. The photoresist composition is one which is used for coating a positive photoresist composition on the total surface to be coated of a substrate by relatively moving discharge nozzles and the substrate; which composition contains (A) an alkali soluble resin, (B) a naphthoquinonediazido group-containing compound, (D) an organic solvent, and (E) a surfactant containing 10 to 25% by weight of fluorine, and 3 to 10% by weight of silicon.
TW093122993A 2003-09-30 2004-07-30 Positive photoresist composition for discharge nozzle-coating method and formation method of resist pattern TWI326798B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003340032A JP4152852B2 (en) 2003-09-30 2003-09-30 POSITIVE PHOTORESIST COMPOSITION FOR DISCHARGE NOZZLE TYPE COATING METHOD AND METHOD FOR FORMING RESIST PATTERN

Publications (2)

Publication Number Publication Date
TW200512539A true TW200512539A (en) 2005-04-01
TWI326798B TWI326798B (en) 2010-07-01

Family

ID=34535050

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093122993A TWI326798B (en) 2003-09-30 2004-07-30 Positive photoresist composition for discharge nozzle-coating method and formation method of resist pattern

Country Status (4)

Country Link
JP (1) JP4152852B2 (en)
KR (1) KR100636583B1 (en)
CN (1) CN100351701C (en)
TW (1) TWI326798B (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4553140B2 (en) 2005-12-13 2010-09-29 信越化学工業株式会社 Positive photoresist composition
US8124172B2 (en) * 2006-03-02 2012-02-28 E.I. Du Pont De Nemours And Company Process for making contained layers and devices made with same
CN101501570B (en) * 2006-08-04 2012-07-25 东友精化股份有限公司 Photoresist composition and patterning method thereof
JP2009151266A (en) * 2007-11-29 2009-07-09 Jsr Corp Positive radiation-sensitive resin composition
KR101632965B1 (en) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 Photoresist composition and method of fabricating thin film transistor substrate
JP5574087B2 (en) * 2009-01-28 2014-08-20 Ｊｓｒ株式会社 Radiation-sensitive resin composition, interlayer insulating film and method for producing the same
JP5674506B2 (en) * 2011-02-25 2015-02-25 東京応化工業株式会社 Positive resist composition and resist pattern forming method
JP5924760B2 (en) * 2011-12-06 2016-05-25 東京応化工業株式会社 Method for producing resist for spinless coating
CN103376650B (en) * 2012-04-25 2016-03-02 东京应化工业株式会社 Light shield layer forms the manufacture method with photonasty substrate composition
JP6983059B2 (en) * 2017-12-26 2021-12-17 信越化学工業株式会社 Method for Producing Dihydroxynaphthalene Condensate and Dihydroxynaphthalene Condensate
CN113736466B (en) * 2020-05-29 2023-05-12 新应材股份有限公司 Etchant composition, adhesion promoter, method for removing polyimide and etching process
TWI751568B (en) 2020-05-29 2022-01-01 新應材股份有限公司 Etchant composition, tackifier, alkaline solution, method of removing polyimide and etching process

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0654384B2 (en) * 1985-08-09 1994-07-20 東京応化工業株式会社 Positive photoresist composition
JPS6334540A (en) 1986-07-30 1988-02-15 Mitsubishi Chem Ind Ltd Positive type photoresist composition
US5700620A (en) * 1993-12-24 1997-12-23 Fuji Photo Film Co., Ltd. Radiation ray sensitive resin compostion containing at least two different naphthoquinonediazide sulfonic acid esters and an alkali-soluble low-molecular compound
WO2000034829A1 (en) * 1998-12-10 2000-06-15 Clariant International Ltd. Positively photosensitive resin composition
JP3977674B2 (en) * 2001-03-22 2007-09-19 東京エレクトロン株式会社 Substrate coating apparatus and substrate coating method

Also Published As

Publication number Publication date
TWI326798B (en) 2010-07-01
JP2005107130A (en) 2005-04-21
JP4152852B2 (en) 2008-09-17
CN100351701C (en) 2007-11-28
KR20050031874A (en) 2005-04-06
CN1603954A (en) 2005-04-06
KR100636583B1 (en) 2006-10-19

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