TW200511610A - Light-emitting component, and production method for light-emitting component - Google Patents

Light-emitting component, and production method for light-emitting component

Info

Publication number
TW200511610A
TW200511610A TW093117110A TW93117110A TW200511610A TW 200511610 A TW200511610 A TW 200511610A TW 093117110 A TW093117110 A TW 093117110A TW 93117110 A TW93117110 A TW 93117110A TW 200511610 A TW200511610 A TW 200511610A
Authority
TW
Taiwan
Prior art keywords
light
layer
emitting component
metal layer
reflection
Prior art date
Application number
TW093117110A
Other languages
Chinese (zh)
Other versions
TWI342074B (en
Inventor
Kazunori Hagimoto
Original Assignee
Shin Etsu Handotai K K
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Handotai K K filed Critical Shin Etsu Handotai K K
Publication of TW200511610A publication Critical patent/TW200511610A/en
Application granted granted Critical
Publication of TWI342074B publication Critical patent/TWI342074B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/405—Reflective materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

This invention relates to a light-emitting component, and production method for light-emitting component. In a light-emitting component 100, the first main surface of a compound semiconductor layer with a light-emitting layer unit 24 is used as a light pick-up surface. The reflection metal layer 10c with a reflection surface for reflecting the light from the light-emitting layer unit 24 to the light pick-up surface side is formed on the second main surface side of the compound semiconductor layer. Via the bonding metal layers 10a, 10b, the reflection metal layer 10c is bonded to a component substrate 7. The reflection metal layer-side diffusion-preventing layer 10f that prevents the metal components of the bonding metal layers 10a, 10b from diffusing to the reflection metal layer 10c side is inserted between the reflection metal layer 10c and the bonding metal layers 10a, 10b. By means of this way, the light-emitting component comprises a light-emitting layer covered with the reflection metal layer. Via another bonding metal layer, the reflection metal layer is pasted onto the component substrate. The light-emitting component can effectively prevent the component diffusion from the bonding metal layers to the reflection metal layer. Eventually, it prevents the defects such as reducing reflectivity caused by diffusion.
TW093117110A 2003-07-23 2004-06-15 Light-emitting component, and production method for light-emitting component TW200511610A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003200443A JP3951300B2 (en) 2003-07-23 2003-07-23 Light emitting device and method for manufacturing light emitting device

Publications (2)

Publication Number Publication Date
TW200511610A true TW200511610A (en) 2005-03-16
TWI342074B TWI342074B (en) 2011-05-11

Family

ID=34074474

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093117110A TW200511610A (en) 2003-07-23 2004-06-15 Light-emitting component, and production method for light-emitting component

Country Status (3)

Country Link
JP (1) JP3951300B2 (en)
TW (1) TW200511610A (en)
WO (1) WO2005008793A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395349B (en) * 2009-10-20 2013-05-01 Just Innovation Corp Light emitting diode chip and fabricating method thereof
TWI405358B (en) * 2010-03-16 2013-08-11 Just Innovation Corp Light emitting diode chip and fabricating method thereof

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20060131327A (en) * 2005-06-16 2006-12-20 엘지전자 주식회사 Method of manufacturing light emitting diode
JP2007103689A (en) * 2005-10-05 2007-04-19 Matsushita Electric Ind Co Ltd Semiconductor light emitting device
US8283683B2 (en) 2006-11-07 2012-10-09 Opto Tech Corporation Chip-bonding light emitting diode chip
TWI324403B (en) * 2006-11-07 2010-05-01 Opto Tech Corp Light emitting diode and method manufacturing the same
TWI370555B (en) * 2006-12-29 2012-08-11 Epistar Corp Light-emitting diode and method for manufacturing the same
JP5416363B2 (en) * 2008-05-01 2014-02-12 日立金属株式会社 Semiconductor light emitting device and manufacturing method thereof
KR101710359B1 (en) * 2010-08-20 2017-02-27 엘지이노텍 주식회사 Light emitting device
JP6376430B2 (en) * 2013-09-04 2018-08-22 大日本印刷株式会社 Display device with touch panel sensor and touch position detection function

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS49107475A (en) * 1973-02-15 1974-10-12
JPH084095B2 (en) * 1985-03-26 1996-01-17 日本電気株式会社 Method for manufacturing semiconductor device
JP2000294837A (en) * 1999-04-05 2000-10-20 Stanley Electric Co Ltd Gallium nitride compound semiconductor light emitting element
JP4050444B2 (en) * 2000-05-30 2008-02-20 信越半導体株式会社 Light emitting device and manufacturing method thereof
JP4024994B2 (en) * 2000-06-30 2007-12-19 株式会社東芝 Semiconductor light emitting device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI395349B (en) * 2009-10-20 2013-05-01 Just Innovation Corp Light emitting diode chip and fabricating method thereof
TWI405358B (en) * 2010-03-16 2013-08-11 Just Innovation Corp Light emitting diode chip and fabricating method thereof

Also Published As

Publication number Publication date
WO2005008793A1 (en) 2005-01-27
JP3951300B2 (en) 2007-08-01
TWI342074B (en) 2011-05-11
JP2005044849A (en) 2005-02-17

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees