TW200507338A - Antenna for producing uniform process rates - Google Patents

Antenna for producing uniform process rates

Info

Publication number
TW200507338A
TW200507338A TW093104100A TW93104100A TW200507338A TW 200507338 A TW200507338 A TW 200507338A TW 093104100 A TW093104100 A TW 093104100A TW 93104100 A TW93104100 A TW 93104100A TW 200507338 A TW200507338 A TW 200507338A
Authority
TW
Taiwan
Prior art keywords
antenna
loop
outer loop
inner loop
antenna axis
Prior art date
Application number
TW093104100A
Other languages
Chinese (zh)
Other versions
TWI326940B (en
Inventor
Mark H Wilcoxson
Bailey, Iii
Original Assignee
Lam Res Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Res Corp filed Critical Lam Res Corp
Publication of TW200507338A publication Critical patent/TW200507338A/en
Application granted granted Critical
Publication of TWI326940B publication Critical patent/TWI326940B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/36Structural form of radiating elements, e.g. cone, spiral, umbrella; Particular materials used therewith
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32009Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082Radio frequency generated discharge
    • H01J37/321Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32458Vessel
    • H01J37/32467Material
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q1/00Details of, or arrangements associated with, antennas
    • H01Q1/12Supports; Mounting means
    • H01Q1/22Supports; Mounting means by structural association with other equipment or articles
    • H01Q1/26Supports; Mounting means by structural association with other equipment or articles with electric discharge tube
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01QANTENNAS, i.e. RADIO AERIALS
    • H01Q7/00Loop antennas with a substantially uniform current distribution around the loop and having a directional radiation pattern in a plane perpendicular to the plane of the loop

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Details Of Aerials (AREA)
  • Chemical Vapour Deposition (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Waveguide Aerials (AREA)
  • Aerials With Secondary Devices (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)

Abstract

An antenna arrangement for generating an electric field inside a process chamber through a window. Generally, the antenna arrangement comprises an outer loop, comprising a first outer loop turn disposed around an antenna axis, an inner loop, comprising a first inner loop turn disposed around the antenna axis, wherein the inner loop is closer to the antenna axis than the outer loop is to the antenna axis in each azimuthal direction, and a radial connector radially electrically connecting the outer loop to the inner loop, wherein the radial connector is placed a large distance from the window.
TW093104100A 2003-02-24 2004-02-19 Antenna for producing uniform process rates TWI326940B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/374,868 US6744213B2 (en) 1999-11-15 2003-02-24 Antenna for producing uniform process rates

Publications (2)

Publication Number Publication Date
TW200507338A true TW200507338A (en) 2005-02-16
TWI326940B TWI326940B (en) 2010-07-01

Family

ID=32926260

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093104100A TWI326940B (en) 2003-02-24 2004-02-19 Antenna for producing uniform process rates

Country Status (10)

Country Link
US (2) US6744213B2 (en)
EP (1) EP1632006B1 (en)
JP (1) JP4869059B2 (en)
KR (1) KR101094124B1 (en)
CN (1) CN1833296B (en)
AT (1) ATE506687T1 (en)
DE (1) DE602004032334D1 (en)
IL (1) IL170926A (en)
TW (1) TWI326940B (en)
WO (1) WO2004077608A2 (en)

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KR200253559Y1 (en) * 2001-07-30 2001-11-22 주식회사 플라즈마트 Antenna Structure of Inductively Coupled Plasma Generating Device
US6855225B1 (en) * 2002-06-25 2005-02-15 Novellus Systems, Inc. Single-tube interlaced inductively coupling plasma source
GB0326500D0 (en) * 2003-11-13 2003-12-17 Oxford Instr Plasma Technology Gas port assembly
US20050205211A1 (en) * 2004-03-22 2005-09-22 Vikram Singh Plasma immersion ion implantion apparatus and method
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
US7527713B2 (en) * 2004-05-26 2009-05-05 Applied Materials, Inc. Variable quadruple electromagnet array in plasma processing
US8187416B2 (en) * 2005-05-20 2012-05-29 Applied Materials, Inc. Interior antenna for substrate processing chamber
CN101543141B (en) * 2006-11-28 2013-07-17 莎姆克株式会社 Plasma processing apparatus
JP5098882B2 (en) * 2007-08-31 2012-12-12 東京エレクトロン株式会社 Plasma processing equipment
JP5301812B2 (en) * 2007-11-14 2013-09-25 東京エレクトロン株式会社 Plasma processing equipment
US20120160806A1 (en) * 2009-08-21 2012-06-28 Godyak Valery A Inductive plasma source
US20110094683A1 (en) 2009-10-26 2011-04-28 Applied Materials, Inc. Rf feed structure for plasma processing
US20110094994A1 (en) * 2009-10-26 2011-04-28 Applied Materials, Inc. Inductively coupled plasma apparatus
JP5554047B2 (en) * 2009-10-27 2014-07-23 東京エレクトロン株式会社 Plasma processing equipment
JP5592098B2 (en) * 2009-10-27 2014-09-17 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
KR101757922B1 (en) 2009-10-27 2017-07-14 도쿄엘렉트론가부시키가이샤 Plamsa processing apparatus
CN102054649B (en) * 2009-10-27 2014-03-19 东京毅力科创株式会社 Plasma processing apparatus and plasma processing method
CN102056395B (en) 2009-10-27 2014-05-07 东京毅力科创株式会社 Plasma processing apparatus and plasma processing method
JP5554099B2 (en) * 2010-03-18 2014-07-23 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
SG10201502985TA (en) * 2010-04-20 2015-05-28 Lam Res Corp Methods and apparatus for an induction coil arrangement in a plasma processing system
JP5851682B2 (en) * 2010-09-28 2016-02-03 東京エレクトロン株式会社 Plasma processing equipment
JP5916044B2 (en) * 2010-09-28 2016-05-11 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
US8884178B2 (en) * 2010-10-20 2014-11-11 Lam Research Corporation Methods and apparatus for igniting and sustaining plasma
JP5018994B1 (en) * 2011-11-09 2012-09-05 日新電機株式会社 Plasma processing equipment
FR2998722B1 (en) * 2012-11-23 2016-04-15 Thales Sa ANTENNAIRE SYSTEM WITH IMBRIQUE BUCKLES AND VEHICLE COMPRISING SUCH ANTENNA SYSTEM
WO2014204598A1 (en) * 2013-06-17 2014-12-24 Applied Materials, Inc. Enhanced plasma source for a plasma reactor
KR20150088453A (en) * 2014-01-24 2015-08-03 한국전자통신연구원 Multiband plasma loop antenna
US9825597B2 (en) 2015-12-30 2017-11-21 Skyworks Solutions, Inc. Impedance transformation circuit for amplifier
US10062670B2 (en) 2016-04-18 2018-08-28 Skyworks Solutions, Inc. Radio frequency system-in-package with stacked clocking crystal
WO2017184654A1 (en) * 2016-04-19 2017-10-26 Skyworks Solutions, Inc. Selective shielding of radio frequency modules
TWI692935B (en) 2016-12-29 2020-05-01 美商天工方案公司 Front end systems and related devices, integrated circuits, modules, and methods
US10515924B2 (en) 2017-03-10 2019-12-24 Skyworks Solutions, Inc. Radio frequency modules
US10460914B2 (en) 2017-11-30 2019-10-29 Lam Research Corporation Ferrite cage RF isolator for power circuitry
US20200209928A1 (en) * 2018-12-27 2020-07-02 Innolux Corporation Electronic device
CN111785605A (en) 2020-06-23 2020-10-16 北京北方华创微电子装备有限公司 Coil structure and semiconductor processing equipment
US20220130704A1 (en) * 2020-10-23 2022-04-28 Applied Materials, Inc. Bipolar electrostatic chuck to limit dc discharge
KR20240064104A (en) * 2022-11-04 2024-05-13 주성엔지니어링(주) The Substrate Processing Apparatus
CN116390320A (en) * 2023-05-30 2023-07-04 安徽农业大学 Electron cyclotron resonance discharge device and application

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US5698036A (en) * 1995-05-26 1997-12-16 Tokyo Electron Limited Plasma processing apparatus
JP3153743B2 (en) 1995-08-31 2001-04-09 東京エレクトロン株式会社 Plasma processing equipment
US6089182A (en) * 1995-08-17 2000-07-18 Tokyo Electron Limited Plasma processing apparatus
CA2207154A1 (en) 1996-06-10 1997-12-10 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US6028395A (en) 1997-09-16 2000-02-22 Lam Research Corporation Vacuum plasma processor having coil with added conducting segments to its peripheral part
US6028285A (en) * 1997-11-19 2000-02-22 Board Of Regents, The University Of Texas System High density plasma source for semiconductor processing
US6229264B1 (en) * 1999-03-31 2001-05-08 Lam Research Corporation Plasma processor with coil having variable rf coupling
KR100338057B1 (en) * 1999-08-26 2002-05-24 황 철 주 Antenna device for generating inductively coupled plasma
US6341574B1 (en) 1999-11-15 2002-01-29 Lam Research Corporation Plasma processing systems
US6320320B1 (en) * 1999-11-15 2001-11-20 Lam Research Corporation Method and apparatus for producing uniform process rates
US6322661B1 (en) 1999-11-15 2001-11-27 Lam Research Corporation Method and apparatus for controlling the volume of a plasma
US6302966B1 (en) 1999-11-15 2001-10-16 Lam Research Corporation Temperature control system for plasma processing apparatus
US6518705B2 (en) * 1999-11-15 2003-02-11 Lam Research Corporation Method and apparatus for producing uniform process rates
KR100396214B1 (en) * 2001-06-19 2003-09-02 주성엔지니어링(주) Plasma processing apparatus having parallel resonance antenna for very high frequency
KR100476902B1 (en) * 2001-07-20 2005-03-17 주식회사 셈테크놀러지 The Large-Area Plasma Antenna(LAPA) and The Plasma Source For Making Uniform Plasma

Also Published As

Publication number Publication date
EP1632006A4 (en) 2008-11-26
IL170926A0 (en) 2011-08-01
JP2006518915A (en) 2006-08-17
EP1632006A2 (en) 2006-03-08
WO2004077608A3 (en) 2006-01-12
CN1833296B (en) 2010-10-20
JP4869059B2 (en) 2012-02-01
IL170926A (en) 2012-01-31
US20040216676A1 (en) 2004-11-04
ATE506687T1 (en) 2011-05-15
CN1833296A (en) 2006-09-13
US20030189524A1 (en) 2003-10-09
KR20050103504A (en) 2005-10-31
DE602004032334D1 (en) 2011-06-01
KR101094124B1 (en) 2011-12-15
TWI326940B (en) 2010-07-01
US6744213B2 (en) 2004-06-01
EP1632006B1 (en) 2011-04-20
WO2004077608A2 (en) 2004-09-10
US6873112B2 (en) 2005-03-29

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees