TW200500807A - Positive photoresist composition for manufacturing substrate and method for forming resist pattern - Google Patents

Positive photoresist composition for manufacturing substrate and method for forming resist pattern

Info

Publication number
TW200500807A
TW200500807A TW093114985A TW93114985A TW200500807A TW 200500807 A TW200500807 A TW 200500807A TW 093114985 A TW093114985 A TW 093114985A TW 93114985 A TW93114985 A TW 93114985A TW 200500807 A TW200500807 A TW 200500807A
Authority
TW
Taiwan
Prior art keywords
positive photoresist
photoresist composition
resin component
resist pattern
alkali
Prior art date
Application number
TW093114985A
Other languages
Chinese (zh)
Other versions
TWI287173B (en
Inventor
Masaki Kurihara
Shinichi Hidesaka
Satoshi Niikura
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200500807A publication Critical patent/TW200500807A/en
Application granted granted Critical
Publication of TWI287173B publication Critical patent/TWI287173B/en

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

A positive photoresist composition for a system LCD of low cost, which has a high linearity, a high image dissector, a high DOS property, a high inhibition of degassing and a high heating resistance, and more desirably can endure through volume consumption, and a method for forming the resist pattern using the positive photoresist composition are provided. The positive photoresist composition is for a system LCD and contains (A) an alkali soluble resin component or (A') an alkali insoluble resin component or a resin component which is not readily soluble in alkali, wherein the (A') resin component is altered to become alkali soluble due to acid action. The resin components are obtained by purification action of an ion exchange resin before use in the control of the resist composition.
TW093114985A 2003-06-16 2004-05-26 Positive photoresist composition for manufacturing substrate and method for forming resist pattern TWI287173B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003171029A JP2005010215A (en) 2003-06-16 2003-06-16 Positive photoresist composition for manufacture of circuit board having integrated circuit and liquid crystal display section fabricated on one board, and method for forming resist pattern

Publications (2)

Publication Number Publication Date
TW200500807A true TW200500807A (en) 2005-01-01
TWI287173B TWI287173B (en) 2007-09-21

Family

ID=34095657

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093114985A TWI287173B (en) 2003-06-16 2004-05-26 Positive photoresist composition for manufacturing substrate and method for forming resist pattern

Country Status (3)

Country Link
JP (1) JP2005010215A (en)
KR (1) KR100656136B1 (en)
TW (1) TWI287173B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107544209A (en) * 2016-06-27 2018-01-05 奇美实业股份有限公司 Positive photosensitive resin composition and use thereof

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006120896A1 (en) * 2005-05-02 2006-11-16 Tokyo Ohka Kogyo Co., Ltd. Positive resist composition and method for forming resist pattern
JP5772181B2 (en) * 2011-04-20 2015-09-02 Jsr株式会社 Radiation sensitive resin composition, interlayer insulating film for display element and method for forming the same
CN111812236A (en) * 2020-07-06 2020-10-23 广州广电计量检测股份有限公司 Detection method of alpha, alpha' -tri (4-hydroxyphenyl) -1-ethyl-4-isopropylbenzene

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0465415A (en) * 1990-07-04 1992-03-02 Hitachi Chem Co Ltd Production of novolak resin having decreased inpurity metal content
US5378802A (en) * 1991-09-03 1995-01-03 Ocg Microelectronic Materials, Inc. Method for removing impurities from resist components and novolak resins
US6136504A (en) * 1998-03-30 2000-10-24 Fuji Photo Film Co., Ltd. Positive-working photoresist composition
US5955570A (en) * 1998-07-01 1999-09-21 Clariant International Ltd. Trace metal ion reduction by Ion Exchange Pack

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107544209A (en) * 2016-06-27 2018-01-05 奇美实业股份有限公司 Positive photosensitive resin composition and use thereof

Also Published As

Publication number Publication date
TWI287173B (en) 2007-09-21
JP2005010215A (en) 2005-01-13
KR100656136B1 (en) 2006-12-13
KR20040111039A (en) 2004-12-31

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees