TW200428682A

TW200428682A - Light emitting systems

Info

Publication number: TW200428682A
Application number: TW93109473A
Authority: TW
Inventors: Alexei A Erchak
Original assignee: Luminus Devices Inc
Priority date: 2003-04-15
Filing date: 2004-04-06
Publication date: 2004-12-16
Also published as: TWI340477B

Abstract

Light-emitting systems, and related components, systems and methods are disclosed.

Description

200428682 五、發明說明（2) 【發明所屬之技術領域】本發明有關於一種發光系統及其相關元件、系統及方法。 7 【先前技術】相較於白熾燈或電燈（incandesCent light soune) 及/或螢光燈（fluorescent light source)而言，發光二極體（light emitting diode，LED)所提供之光線係可具有較高的效能。此外，由於L E D s之相關設備係可提供相當咼的電力效率（power efficiency)，藉此已於各式各樣的照明設施之中取代了傳統的光源（丨i gh t sources)。例如·· L E D s係用以做為交通用燈（t r a f f i c 1 i g h t s )之使用、用以對於電話鍵盤（cell phone keypads)與顯示器 (displays)等進行照明。一般而言，LED係由複數層結構（muitip；[e layers)m 形成，其中，於複數層結構中之至少部分的層結構係由不同的材料所製成，並且藉由這些層結構之材質、厚度決定了 L E D所發出光線之波長（w a v e 1 e n g t h )。另一方面，經由對於這些層結構之化學成份（chemical composition)的選擇作用下’如此係可以對於其光動力（optical power)進行相當有效能的收縮，並且對於所射出之電載子 (electrical charge carriers)進行隔離，如此以避免其進入某些特疋區域（regions)( —般稱之為量子井（qUantum wells))。通常，於量子井所生成位置之接面（junction)200428682 V. Description of the invention (2) [Technical field to which the invention belongs] The present invention relates to a lighting system and its related components, systems and methods. 7 [Prior art] Compared to incandescent lamps or incandesCent light sounes and / or fluorescent light sources, the light provided by light emitting diodes (LEDs) can be High efficiency. In addition, as the related equipment of LEDs can provide considerable power efficiency, traditional light sources have been replaced in various lighting facilities. For example, · L E D s is used as a traffic light (t r a f f c 1 i g h t s), used to illuminate cell phone keypads and displays. In general, LEDs are formed by multiple layer structures (muitip; [e layers) m, where at least part of the layer structure in the multiple layer structure is made of different materials, and the material of these layer structures The thickness determines the wavelength (wave 1 ength) of the light emitted by the LED. On the other hand, through the selection of the chemical composition of these layer structures, 'this system can perform quite effective energy contraction for its optical power, and for the emitted electrical charge carriers), so as to prevent them from entering certain regions (commonly known as qUantum wells). Usually, the junction at the location where the quantum well is generated

1057-6267-PF(N2).ptd 第6頁 200428682 五、發明說明（3) 之一側邊的層結構上係摻雜了給予體原子（d 〇 n 〇 r atoms) ’藉此以導致南電子濃度（eiec^r〇n concentration^通常稱這些層結構為η型層結構（11-41)6 layers))的產生；另外，於其相對侧邊之層結構上係摻雜了受體原子（acceptor atoms)，藉此以導致相當高的電洞濃度（hole concent rati on)(通常稱這些層結構為p型層結構（p-type layers)) 〇以下將針對LED之製作方式提出說明。於晶圓（wafer) 之製作過程中係形成了複數材料層。一般而言，這些層結構係箱由蟲日日》l積技術（epitaxial deposition technique)所形成，例如：金屬有機化學氣相沉積 (metal-organic chemical vapor deposition (MOCVD) ^ 於其成長基底（growth substrate)之上係已預先形成了沉積層結構。隨後，藉由各種蝕刻及金屬化技術（etching and metallization techniques)對於這些夕卜露的層結構進行電流注入用之接觸墊（contact)之製作，隨後便可對於晶圓進行切割以製作出個別L E D晶片（L E D c h i p s )。通常，經切割後之個別LED晶片係利用封裝技術加以包覆。當進行L E D之操作時，一般係將電能（e 1 e c t r i c a 1 energy)注入於LED之中，此電能隨後便可轉換為電磁輻射 (electromagnetic radiation)(光線），部分的電磁輻射或光線便可經由LED而被引出。【發明内容】1057-6267-PF (N2) .ptd Page 6 200428682 V. Description of the invention (3) One of the layer structures on the side is doped with donor atoms (d 〇n 〇r atoms). The electron concentration (eiec ^ r0n concentration ^ is usually called the η-type layer structure (11-41) 6 layers)); in addition, the layer structure on the opposite side is doped with acceptor atoms (Acceptor atoms), so as to cause a relatively high hole concentration (commonly referred to as these p-type layers). The following description of the LED manufacturing method will be provided. A plurality of material layers are formed during the fabrication of the wafer. Generally speaking, these layer structure boxes are formed by the epitaxial deposition technique, such as metal-organic chemical vapor deposition (MOCVD) ^ on the growth substrate The substrate layer has been previously formed with a deposited layer structure. Subsequently, the etching and metallization techniques are used to make contact pads for current injection of these layer structures. Subsequently, the wafer can be diced to make individual LED chips. Usually, the individual LED chips after dicing are covered with packaging technology. When the LED is operated, the electrical energy (e 1 ectrica 1 energy) is injected into the LED, and this electrical energy can then be converted into electromagnetic radiation (light), and some of the electromagnetic radiation or light can be led out through the LED. [Summary of the Invention]

1057-6267-PF(N2).ptd 第7頁 200428682 五、發明說明（4) 有鑑於此其相關元件、，本發明糸統及方例中，本於一實施發光裝置。發光裝置包產生區域及一中，經由第一第一層，層之一表產生之光線便可經由第一層之表面具有一介電行空間上的改數，調變參數當光產生區域光裝置發出時變；圖樣係大於零所產生之，光線可施例中，於另一實一發光裝置，發光裝置光產生區域及其中，經由第所產生之光線表面係具有一 (nonperiodic 光裝置之設計由第一層之表而發出。於又一實一發光裝置，一第一層 —層之一便可經由介電函數 pattern 作用下，面而自發施例中，發光裝置之目的就在於提供一種發光系統及法。發明發光系統之特徵在於其包括一括：一多重推疊材料層，包括一光第一層係由光產生區域所支承，盆面之設計作用下，由光產生區域所一層之表面而自發光裝置發出；第函數，介電函數係根據一圖樣而進係具有一理想晶格常數及一調變表 ;以及在發光裝置之設計作用下: 光線便可經由第一層之表面而自發自發光系統而發出。 X 本毛明發光糸統之特徵在於其包括包括：一多重推疊材料層，包括一，第一層係由光產生區域所支承，表面之設計作用下，由光產生區域第一層之表面而自發光裝置發出· ，介電函數係根據一非周期性圖樣 )而進行空間上的改變；以及在發7 當光產生區域所產生之光線便可妙光裝置發出時，光線可自發光系^ 本發明發光系統之特徵在於其包括包括：一多重推疊材料層，包括一1057-6267-PF (N2) .ptd Page 7 200428682 V. Description of the Invention (4) In view of this, its related elements, systems and examples of the present invention are implemented in a light-emitting device. The light emitting device package generates a region and one, through the first layer, the light generated by one of the layers can have a dielectric line space modification on the surface of the first layer. The device emits a time-varying pattern; the pattern is generated by more than zero. In the embodiment, the light can be in another real light-emitting device, the light-emitting device light-generating area and the surface of the light generated through the first light-emitting device has a (nonperiodic light device The design is issued by the table of the first layer. In another real light-emitting device, a first layer-one of the layers can be subjected to a dielectric function pattern, and in a spontaneous embodiment, the purpose of the light-emitting device is to provide A light-emitting system and method. The light-emitting system of the invention is characterized in that it includes a layer of multiple layers of material, including a layer of light. The surface of one layer is emitted from the light-emitting device; the first function, the dielectric function is based on a pattern, and has an ideal lattice constant and a modulation table; and Under the function of the device design: light can be emitted spontaneously through the surface of the first layer. The X-ray Maoming luminescence system is characterized in that it includes: a multiple layer of stacked material, including one, the first The layer is supported by the light-generating area, and the surface of the first layer of the light-generating area is emitted from the light-emitting device under the design of the surface. The dielectric function is spatially changed according to a non-periodic pattern; and 7 When the light generated by the light-generating area can be emitted by the magic light device, the light can be self-luminous. The light-emitting system of the present invention is characterized in that it includes: a multiple layer of stacked material, including a

1057-6267-PF(N2).ptd 第8頁 200428682 五、發明說明（5) 光產生區域及一第一層，第一層係由光產生區域所支承，其中，經由第一層之一表面之設計作用下，由光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出· 表面係具有一介電函數，介電函數係根據一複雜周期性圖樣（complex periodic pattern)而進行空間上的改變.以及在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時，光線可自發光糸統而發出。於又一實施例一發光裝置，發光 η摻雜材料層、一 p 射材料層，可將經射材料層上之至少材料所反射，其中由光產生區域所產而自發光裝置發出數，介電函數係根材料層與反射材料射材料層之間的距光產生區域所產生自發光裝置發出時於又一實施例一發光裝置，發光光產生區域及一第 τ 裝置包括摻雜材料層奉發明發光糸統之特徵在於其包括多重推®材料層，包括光產生區域；以及一反由光產生區域所產生、且撞擊在具有反約5 0 %之光線係會被反射材料層之反射，經η接雜材料層之一表面的設計下: 生之光線便可經由η摻雜材料層之表面 ;η摻雜材料層之表面係具有一介電函據一圖樣而進行空間上的改變；ρ摻雜層之間的距離係小於η摻雜材料層與反離；以及在發光裝置之設計作用下，當之光線便可經由η摻雜材料層之表面而，光線可自發光系統而發出。 ^本發明發光系統之特徵在於其包括士置包，：一多重推疊材料層，包括一層第一層係由光產生區域所支承，1057-6267-PF (N2) .ptd Page 8 200428682 V. Description of the invention (5) Light-generating area and a first layer, the first layer is supported by the light-generating area, and it passes through a surface of the first layer Under the design, the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer. The surface has a dielectric function, and the dielectric function is based on a complex periodic pattern. And make spatial changes. Under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. In yet another embodiment of the light-emitting device, the light-emitting n-doped material layer and a p-emission material layer can reflect at least the material on the transmitted material layer, and the number of light emitted from the light-emitting device produced by the light-generating region is described by In another embodiment of the light-emitting device, the light-emitting device is generated from the light-generating region between the electric function system root material layer and the reflective material emitting material layer. The light-emitting light-generating region and a τ device include a doped material layer. The invention of the luminescence system is characterized in that it includes multiple layers of material, including a light-generating area; and a light system that is generated by the light-generating area and hits about 50% of the reflection is reflected by the reflective material layer, Under the design of one surface of the η-doped material layer: the generated light can pass through the surface of the η-doped material layer; the surface of the η-doped material layer has a dielectric function and a pattern to make spatial changes; The distance between the ρ-doped layers is smaller than the η-doped material layer and back-separation; and under the design of the light-emitting device, when the light can pass through the surface of the η-doped material layer, the light can Light emitting system. ^ The light-emitting system of the present invention is characterized in that it includes a shizhi bag: a multiple layer of stacked material, including a first layer supported by a light-generating area,

1057-6267-PF(N2).ptd 第9頁 200428682 五、發明說明（6) 經由第一層之一表面之設計作用下之光線便可經由第一居 ’由光產生區域所產生面係具有一介電函數:介雷==自發光裝置發出，並且表上的改變；以及一反射★粗=糸根據一圖樣而進行空間生、且撞擊在具有反射材料^上:經由光產生區域所產於反射材料層與第-層之間。*發;晋ϊίί域係位當光產生區域所產生之光埯#可γ衣置之°又计作用下，伞狀要欲山士 ϊ ^先線便可經由第一層之表面而自發先衣置發出％，光線可自發光系統而發出。毛實施例中，本發明發光m特 -發繼，發光裝置包括：一多重推疊材料層，包= 光產生區域及一第一層，第一層係由光產生區域所支經由第一層之一表面之設計作用下’由光產生區域所產之光線便可經由第一層之表面而自發光裝置發出；以及一材料（mater ial)，接觸於第一層之表面，材&之折射率^ 小於1 · 5，其中，發光裝置係經由封裝方式而加以包覆/ 並且在發光裝置之設計作用下，當光產生區域所產n’光線便可經由第一層之表面而自發光裝置發出時，光線可自發光糸統而發出。 ' 於又一實施例中，本發明發光系統之特徵在於其包括一發光裝置，發光裝置包括：一多重推疊材料層，'/包=一光產生區域及一第一層’第一層係由光產生區域所支承經由第一層之一表面之設計作用下，由光產生土 ^域所產生之光線便可經由第一層之表面而自發光裝置菸φ 、， ^ 私m ，亚且表1057-6267-PF (N2) .ptd Page 9 200428682 V. Description of the invention (6) The light generated by the design of one surface of the first layer can pass through the first home's surface generated by the light generating area. A dielectric function: dielectric lightning == emitted from the light-emitting device, and changes on the table; and a reflection ★ rough = 空间 spatially generated according to a pattern, and impacted on a reflective material ^: produced by the light-generating area Between the reflective material layer and the first layer. * 发; 晋 ϊί Department of the light generated when the light-generating area ## can be placed under the influence of the umbrella, the umbrella-like shape to be a mountain ϊ ^ first line can be spontaneous first through the surface of the first layer The clothing set emits%, and the light can be emitted from the lighting system. In the embodiment of the present invention, the light-emitting device of the present invention is characterized in that the light-emitting device includes: a multiple layer of stacked material, including a light-generating area and a first layer. The first layer is supported by the light-generating area through the first layer. Under the design of one surface of the layer, the light produced by the light-generating area can be emitted from the light-emitting device through the surface of the first layer; and a material (material) that contacts the surface of the first layer. The refractive index ^ is less than 1.5, in which the light-emitting device is covered by a packaging method / and under the design of the light-emitting device, when n ′ light generated in the light-generating area can pass through the surface of the first layer, When the light emitting device emits light, light can be emitted from the light emitting system. In another embodiment, the light-emitting system of the present invention is characterized in that it includes a light-emitting device. The light-emitting device includes: a multiple layer of stacked material, '/ package = a light generating area and a first layer' It is supported by the light-generating area through the design of one surface of the first layer, and the light generated by the light-generating soil can pass through the surface of the first layer to emit light from the light-emitting device φ,, ^ Pri m, Asia And table

1057-6267-PF(N2).p^ ^ 第 1〇頁 "----- 200428682 五、發明說明（7) 面係具有一介電函| . 上的改變；以及一辟从丨電函數係根據一圖樣而進行空間層之表面所支承，^料（Ph〇SPh〇r material),由第一質上係完全不具有矽分财發光裝置之側壁（sid⑼al 1)於實 +材料’並且在發来梦晉之却·古4*你下，§光產生區域所產生之光線便 ^ 自發光裝時’光線可自發光系：而；出表而 -發光f置，發二t罢本發明發光系統之特徵在於其包括光包；二==…包括- 經由第-層之-表面之設計作用了 ’由光產生區之光線便可經由第-層之表面而自發光裝置發A 面係具有一介電函數，介電函數係根據一圖樣而進行空間上的改變’以及一磷材料彳仙⑵仙^^以^“”^經設計下係使得由光產生區域所產生之光線係經由第一層之表面而發出，並且與磷材料之間產生交互作用，使得經由磷層所發出之光線於實質上係為白光，其中，發光裝置之=^ 與其面積之間的比值係小到足以允許白光可以任何方^進行延伸，其中，發光裝置之高度（height)與其面積（area) 之間的比值（r a t i 〇 )係小到足以允許白光可以任何方向進行延伸，並且在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時，光線可自發光系統而發出。於又一實施例中，本發明發光系統之特徵在於其包括一發光裝置，發光裝置包括：一多重推疊材料層，包括_1057-6267-PF (N2) .p ^ ^ Page 10 " ----- 200428682 V. Description of the invention (7) The surface has a dielectric function |. The function is supported by the surface of the space layer according to a pattern. The material (Phospohr material) is formed by the first side of the side wall (sid⑼al 1) without solid silicon light emitting device. And when you send Mengjinzhi · Gu 4 *, the light generated in the § light-generating area will be ^ self-luminous, when the light can be self-luminous: and; out of the table-the light is f, and the light is t The light-emitting system of the present invention is characterized in that it includes a light packet; two == ... includes-through the design of the surface of the first layer-the light from the light generating area can be emitted from the light-emitting device through the surface of the first layer The surface system has a dielectric function, and the dielectric function is spatially changed according to a pattern 'and a phosphorous material 彳仙 ⑵ 仙 ^^^^ "^ Designed to make the light generated by the light-generating area It is emitted through the surface of the first layer and interacts with the phosphorous material, so that it is emitted through the phosphorous layer. The light is essentially white light, where the ratio between the light-emitting device = ^ and its area is small enough to allow white light to extend in any direction ^, where the height of the light-emitting device is between its area and its area The ratio (rati 〇) is small enough to allow white light to extend in any direction, and under the design of the light emitting device, when the light generated from the light generating area can be emitted from the light emitting device through the surface of the first layer, Light can be emitted from the lighting system. In yet another embodiment, the light-emitting system of the present invention is characterized in that it includes a light-emitting device. The light-emitting device includes: a multiple layer of stacked material, including

200428682 五、發明說明（8) 光產生區域及一第一層，第一層係由光產生區域所支承，經由第一層之一表面之設計作用下，由光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出；一第一薄片，包括一材質，第一薄片之材質於實質上係為透明且可讓光線自發光裝置而發出；以及一第二薄片，包括一磷材料，第二薄片係鄰接於第一薄片，發光裝置係經由封裝方式而加以包覆，第一薄片、第二薄片係共同構成了用以對於發光裝置進行包覆之封裝（package)的一部分，並且在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時，光線可自發光系統而發出。 t狩徵在於其包括多重推疊材料層，包括一係由光產生區域所支承，計作用下，由光產生區域表面而自發光裝置發出； ’介電函數係根據一圖樣經圖樣之設計下，由光之表面而自發光裝置所發普拉斯分佈較為平行。在生區域所產生之光線便可發出時，光線可自發光系於又一實施例中，本發明發一發光裝置，發光裝置包括：一光產生區域及一第一層，第一層其中，經由第一層之一表面之設所產生之光線便可經由第一層之第一層之表面係具有一介電函數 (pattern)而進行空間上的改變：產生區域所產生、且經由第一層出光線之光線分佈係較光線之拉發光裝置之設計作用下，當光產經由第一層之表面而自發光裝置統而發出。於又-實施例中’本發明發光系統之特徵在於其包括200428682 V. Description of the invention (8) The light-generating area and a first layer. The first layer is supported by the light-generating area, and the light generated by the light-generating area can be passed through the design of one surface of the first layer. Emitted from the light-emitting device through the surface of the first layer; a first sheet including a material, the material of the first sheet is substantially transparent and allows light to be emitted from the light-emitting device; and a second sheet including a Phosphorous material, the second sheet is adjacent to the first sheet, and the light-emitting device is covered by a packaging method. The first sheet and the second sheet together form a part of a package for covering the light-emitting device. And, under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. The sign is that it includes multiple layers of stacked material, including a series supported by the light generating area, and under the action of the light generating area, it is emitted from the light-emitting device; the dielectric function is based on the design of a pattern through the design The Plasma distribution emitted from the light emitting device by the surface of light is relatively parallel. When the light generated in the green area can be emitted, the light can be self-emissive. In another embodiment, the present invention emits a light-emitting device. The light-emitting device includes a light-generating area and a first layer. The light generated through the design of a surface of the first layer can be spatially changed through the surface of the first layer of the first layer having a dielectric function (pattern): generated by the production area and passed through the first The light distribution of the layered light is compared with the design of the light-emitting device, when the light is emitted from the light-emitting device through the surface of the first layer. In another embodiment, the lighting system of the present invention is characterized in that it includes

in^7_^9^7-PF(N2).Dtd 第12頁 200428682in ^ 7_ ^ 9 ^ 7-PF (N2) .Dtd Page 12 200428682

五、發明說明（9) 一發光裝置’發光t置包括： '一多重4隹丨丨 y里推豎材料層，光產生區域及一第一層，第一層係由朵匕括一因而在發光裝置之使用過程中，由光產4 又承，線便可經由第一層之表面而自發光裳置於出发玍之光層之表面具有一介電函數，介電函數係根^ 一 ^ :，第一空間上的改變’亚且於光產生區域所產生之總：二二仃至少約為4 5 %係會經由發光裝置之表面而矣度的置之設計作用下，當光產生區域所產 X °在發光裝 ^ . 土'^无綠便可缚t±7楚一層之表面而自發光裝置發出時，光線 &由弟出。曰士尤糸統而發於又一貫施例中，本發明發光系統之特徵在於盆一發光裝置，發光裝置包括一多重推疊材料層，苴/中^ 重推疊材料層包括一光產生區域與一第一層，第二層二光產生區域所支承。第一層包括一表面，由光產生^域所產^之光線便可經由第一層之表面而自發光裝置發出。發光裝置係具有一邊緣（edge)，此一邊緣的長度係可至少^ 為1公釐（111111)(111丨111111641>)(例如：至少約為15_、至少約為2 mm、至少約為2 · 5 mm);此外，在適當之設計下，舍光衣置之弓|出效率（extracti〇I1 efficiency)於實質上係與邊緣的長度無關。在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時’光線可自發光系統而發出。於又一實施例中，本發明發光系統之特徵在於其包括毛光衣置’發光裝置包括一多重推疊材料層，其中，多V. Description of the invention (9) A light-emitting device The light-emitting device includes: 'a multi-layered material layer, a light-generating area, and a first layer. During the use of the light-emitting device, the light can be carried by the light source, and the wire can pass through the surface of the first layer, and the surface of the light layer on which the light-emitting skirt is placed has a dielectric function. The dielectric function is rooted. ^: The change in the first space 'Asia and the total amount generated in the light generation area: at least about 45% is due to the design of the light through the surface of the light emitting device, when light is generated The X ° produced in the area is emitted from the light emitting device when the light emitting device ^. Soil '^ can be bound to the surface of the first layer of t ± 7 without green. In one embodiment, the light emitting system of the present invention is characterized by a pot-shaped light-emitting device. The light-emitting device includes a plurality of layers of stacked materials. The area is supported by a first layer and a second layer of two light generating areas. The first layer includes a surface, and the light produced by the light generating region can be emitted from the light emitting device through the surface of the first layer. The light-emitting device has an edge, and the length of this edge can be at least 1 mm (111111) (111 丨 111111641 >) (for example: at least about 15 mm, at least about 2 mm, at least about 2 mm) · 5 mm); In addition, under the proper design, the efficiency of extracting the bow | extraction efficiency (extractioI1 efficiency) is essentially independent of the length of the edge. Under the design of the light-emitting device, when the light generated from the light-generating area can be emitted from the light-emitting device through the surface of the first layer, the light can be emitted from the light-emitting system. In another embodiment, the light-emitting system of the present invention is characterized in that it includes a hair-coating device, and the light-emitting device includes a multiple layer of stacked material, wherein

1057-6267-PF(N2).ptd 第13頁 200428682 五、發明說明（ίο) 重推疊材料層包括一光產生區域與一第一層，第一層係由光產生區域所支承。第一層包括一表面，由光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出。發光裝置係具有一邊緣，此一邊緣的長度係可至少約為1 m m (例如··至少約為1. 5 m m、至少約為2 m m、至少約為2 . 5 mm);此外，在適當的設計下，發光裝置之電光轉換效率 (wall plug efficiency)於實質上係與邊緣的長度無關。於又一實施例中，本發明發光系統之特徵在於其包括一發光裝置，發光裝置包括了一多重推疊材料層，其中，多重推疊材料層包括一光產生區域與一第一層，第一層係由光產生區域所支承。第一層包括一表面，由光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出。發光裝置係具有一邊緣，此一邊緣的長度係可至少約為1 mm(例如：至少約為1. 5 mm、至少約為2 mm、至少約為2. 5 mm);另外，在適當地對於發光裝置進行設計下，其量子效率（quantum efficiency)於實質上係與邊緣的長度無關。在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時，光線可自發光系統而發出。於又一實施例中，本發明發光系統之特徵在於其包括一發光裝置，發光裝置包括了一多重推疊材料層，其中，多重推疊材料層包括一光產生區域與一第一層，第一層係由光產生區域所支承。第一層包括一表面，由光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出。1057-6267-PF (N2) .ptd Page 13 200428682 V. Description of the invention (ί) The layer of re-pushing material includes a light generating area and a first layer, and the first layer is supported by the light generating area. The first layer includes a surface, and the light generated by the light generating region can be emitted from the light emitting device through the surface of the first layer. The light emitting device has an edge, and the length of this edge may be at least about 1 mm (for example, at least about 1.5 mm, at least about 2 mm, at least about 2.5 mm); Under the design, the wall plug efficiency of the light-emitting device is substantially independent of the length of the edge. In yet another embodiment, the light-emitting system of the present invention is characterized in that it includes a light-emitting device. The light-emitting device includes a multiple layer of push-up material, wherein the multiple layer of push-up material includes a light generating region and a first layer. The first layer is supported by the light generating area. The first layer includes a surface, and the light generated by the light generating region can be emitted from the light emitting device through the surface of the first layer. The light emitting device has an edge, and the length of this edge may be at least about 1 mm (for example: at least about 1.5 mm, at least about 2 mm, at least about 2.5 mm); in addition, where appropriate When a light emitting device is designed, its quantum efficiency is substantially independent of the length of the edges. Under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. In yet another embodiment, the light-emitting system of the present invention is characterized in that it includes a light-emitting device. The light-emitting device includes a multiple layer of push-up material, wherein the multiple layer of push-up material includes a light generating region and a first layer. The first layer is supported by the light generating area. The first layer includes a surface, and the light generated by the light generating region can be emitted from the light emitting device through the surface of the first layer.

1057-6267-PF(N2).ptd 第14頁 200428682 五、發明說明（11) 發光裝置係具有一邊緣，此一邊緣的長度係可至少約為1 mm (例如··至少約為1. 5 mm、至少約為2 min、至少約為2. 5 mm);另外，在適當地對於發光裝置進行設計下，其量子效率（quantum efficiency)於實質上係與邊緣的長度無關。在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時，光線可自發光系統而發出。以下係藉由各實施例以呈現出一或多種特徵。以發光系統是由投影機（p r 〇 j e c t 〇 r s )、可攜式電子裝置（portable electronic dev i ces)、電腦蝥幕（computer monitor)、大面積標誌、系統（large area signage s y s t e m)、車輛照明系統（v e h i c 1 e 1 i g h t i n g s y s t e m s )、一般照明系統（general lighting sysytems)、高亮度照明系統（high brightness lighting systems)、相機閃光燈（camera flashes)、醫療裝置（medical devices)、通訊系統（t e 1 ecommun i ca t i ons systems)、保全感測系統 (security sensing systems)、積體光電系統 (integrated optoelectronic systems)、軍事地域通信系統（military field communication systems)、生物感涓丨J系統（b i〇sens i ng systems )、光動力法療系統 (photodynamic therapy systems)、夜視鏡 (night-vision goggles)、太陽能式運輸照明系統（s〇1 ar powered transit lighting systems)、緊急照明系統 (emergency lighting systmes)、機場跑道照明系統1057-6267-PF (N2) .ptd Page 14 200428682 V. Description of the invention (11) The light emitting device has an edge, and the length of this edge can be at least about 1 mm (for example, at least about 1.5 mm, at least about 2 min, at least about 2.5 mm); In addition, under proper design of the light-emitting device, its quantum efficiency is substantially independent of the length of the edge. Under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. The following is to show one or more features through the embodiments. The lighting system is composed of a projector (pr jects 〇rs), a portable electronic device (portable electronic dev devices), a computer monitor, a large area signage system, a vehicle lighting Systems (vehic 1 e 1 ightingsystems), general lighting systems (general lighting sysytems), high brightness lighting systems (high brightness lighting systems), camera flashes (camera flashes), medical devices (medical devices), communication systems (te 1 ecommun i ca ti ons systems), security sensing systems, integrated optoelectronic systems, military field communication systems, bio-sensing 丨 J systems ), Photodynamic therapy systems, night-vision goggles, solar powered transit lighting systems, emergency lighting systmes, airport runways Lighting system

1057-6267-PF(N2).ptd 第15頁 200428682 五、發明說明（12) (airport runway 1 ighting systems)、航線照明系統 (airline lighting systems)、外科面罩（surgicai goggles)、牙戴式光源（wearable light sources)及其複數組合件所構成之群組中選出。於特定實施例中，發光系統為一投影機 (p r 〇 j e c t 〇 r),(例如· $投影式投影機（r e a r p r 〇 ]· e c七i〇n projector)、前投影式投影機（化〇1^ pr〇jecti〇n projector))。於部分實施例中’發光系統為—車輛照明系統。於特疋貫施例中’發光系統為一般照明系統。於部分實施例中，本發明發光系統之特徵在於其包括一，光i置，發光裝置包括了一多重推疊材料層，此多重推疊材料層包括一光產生區域及一第一層，第一層係由光產生區域所支承’因而在發光裝置之使用過程中，由光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出，其中，發光裝置具有一邊緣，邊緣之長度係至少約為1么屋，亚且在發光裝置之設計下，發光裝置之一引出效率於實質上係與邊緣之長度無關。在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時，光線可自發光系統而發出。定實施例巾，發光系統包括複數發光裝置，這些 i ΐ ΐί係以陣列(array) #式排列1光系、統包括了由 ;光衣置所組成之複數陣列。於特定實施例中’發光系統包括了具有一表面之一殼1057-6267-PF (N2) .ptd Page 15 200428682 V. Description of the Invention (12) (airport runway 1 ighting systems), airline lighting systems (surgicai goggles), tooth-mounted light sources ( wearable light sources) and their plural assemblies. In a specific embodiment, the light-emitting system is a projector (pr 〇ject 〇r), (for example, $ ar projection projector (rearpr 〇) ec VII projector), a front projection type projector (chemical 〇1 ^ prOjection projector)). In some embodiments, the 'lighting system' is a vehicle lighting system. In the specific embodiment, the lighting system is a general lighting system. In some embodiments, the light-emitting system of the present invention is characterized in that it includes a light device and a light-emitting device including a multiple layer of push-on material, the multiple layer of push-on material including a light generating area and a first layer, The first layer is supported by the light-generating area. Therefore, during the use of the light-emitting device, the light generated by the light-generating area can be emitted from the light-emitting device through the surface of the first layer. The light-emitting device has an edge. The length of the edge is at least about 1 unit. Under the design of the light-emitting device, the extraction efficiency of one of the light-emitting devices is substantially independent of the length of the edge. Under the design of the light emitting device, when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. In the embodiment, the light-emitting system includes a plurality of light-emitting devices, and these i ΐ ΐί are arranged in an array (array) type 1 light system, and the system includes a plurality of arrays composed of; In a specific embodiment, the lighting system includes a shell having a surface

第16頁 200428682 五、發明說明（13) 體（housing);發光裝置係設置於殼體之中；以及在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時，光線可自發光系統而發出。於特定實施例中’當光產生區域所產生之光線便可經由第一層之表面而自發光裝置發出時、光線自發光系統發出之前，光線係通過了至少一光學元件（op t i c a 1 component) o 於部分實施例中’發光系統包括複數發光裝置，於發光裝置中之至少一部分發光裝置係具有不同的尖峰發射波長（peak emission wave length) 〇於特定實施例中’發光系統包括複數發光裝置，發光裝置係於實質上均具有相同的尖峰發射波長。多重推疊材料層，包括一光產生區域及一第一層，第一層係由光產生區域所支承，其中，經由第一層之一表面之設計作用下，由光產生區域所產生之光線便可經由第_ 層之表面而自發光裝置發出；表面係具有一介電函數，介電函數係根據一非周期性圖樣（n 〇 n p e r i 0 d i c p a 11 e r η )而進行空間上的改變；以及在發光裝置之設計作用下，當光產生區域所產生之光線便可經由第一層之表面而自發光裳置發出時’光線可自發光系統而發出。一多重材料推疊層係可由一多重半導體材料推疊層 (multi-layer stack of semiconductor material)所製成。苐一層係可為一;n摻雜半導體材料層（a iaye]: 〇fPage 16 200428682 V. Description of the invention (13) housing; the light-emitting device is arranged in the housing; and under the design of the light-emitting device, when the light generated in the light-generating area can pass through the first layer When the surface emits light from the light emitting device, light can be emitted from the light emitting system. In a specific embodiment, 'when the light generated by the light generating area can be emitted from the light emitting device through the surface of the first layer, before the light is emitted from the light emitting system, the light passes through at least one optical element (op tica 1 component) o In some embodiments, the 'light-emitting system includes a plurality of light-emitting devices, and at least a portion of the light-emitting devices in the light-emitting device have different peak emission wave lengths. The light emitting devices have substantially the same peak emission wavelength. Multiple push-over material layers include a light-generating area and a first layer. The first layer is supported by the light-generating area, and the light generated by the light-generating area is designed by a surface of the first layer. It can be emitted from the light-emitting device through the surface of the first layer; the surface system has a dielectric function, and the dielectric function is spatially changed according to a non-periodic pattern (nonperi 0 dicpa 11 er η); Under the design of the light-emitting device, when the light generated by the light-generating area can be emitted from the light-emitting garment through the surface of the first layer, the light can be emitted from the light-emitting system. A multi-material stack is made from a multi-layer stack of semiconductor material. The first layer can be one; n-doped semiconductor material layer (a iaye): 〇f

1057-6267-PF(N2).ptd 第17頁 200428682 五、發明說明（14) n-doped semi conductor material)，並且多重推疊材料層係更可包括了一 P推雜半導體材料層（a 1 a y e r 〇 f p-doped semiconductor material)。光產生區域係可位於η摻雜半導體材料層、p摻雜半導體材料層之間。發光t置更可包括了一支承構件（SUpp〇rt)，藉此以支承多重推疊材料層。發光裝置另外包括了一反射材料層，光產生區域所產生、且撞擊在具有反射材料層上之光線的至少約5 〇 %係會被反射材料層之反射材料所反射。反射材料層係可位於胃支承構件、多重推疊材料層之間。於p摻雜材料層與反射材料層之間的距離係小摻雜材料層與反射材料層之間的距離。發光裝置更可包括了一 p-型歐姆式接觸（p — type ohmic contact)，其中，p-型歐姆式接觸係位於p摻雜材料層與反射材料層之間。發光裝置更可包括了一電流散佈層 (furrent-spreading layer)，其中，電流散佈層係位於第一層、光產生區域之間。、多重材料推疊層係可由半導體材料所製成，例如·· ΙΠ—ν 族半導體材料（III-V semiconductor materials)、有機半導體材料（organic semiconductor materials)、石夕（s i 1 i c 〇 n )。於。卩分貫施例中，圖樣係可不必延伸至光產生區域之於部分實施例中1057-6267-PF (N2) .ptd Page 17 200428682 V. Description of the invention (14) n-doped semi conductor material), and the multiple push-over material layer system may further include a P-doped semiconductor material layer (a 1 ayer 〇f p-doped semiconductor material). The light generating region may be located between the n-doped semiconductor material layer and the p-doped semiconductor material layer. The light emitting device may further include a support member (SUPPORT), thereby supporting multiple layers of stacked materials. The light-emitting device further includes a reflective material layer, and at least about 50% of the light generated in the light-generating area and impinging on the reflective material layer is reflected by the reflective material of the reflective material layer. The reflective material layer can be located between the gastric support member and the multiple push-up material layers. The distance between the p-doped material layer and the reflective material layer is the distance between the small doped material layer and the reflective material layer. The light-emitting device may further include a p-type ohmic contact, wherein the p-type ohmic contact is located between the p-doped material layer and the reflective material layer. The light-emitting device may further include a current-spreading layer, wherein the current-spreading layer is located between the first layer and the light generating region. The multi-material push-stacking system can be made of semiconductor materials, such as III-V semiconductor materials (III-V semiconductor materials), organic semiconductor materials (materials), and si (i i i c). to.卩 In discrete embodiments, the pattern does not need to be extended to the light generating area. In some embodiments

圖樣係可不必延伸至第一層之上The pattern system does not need to extend above the first layer

第18頁 1057-6267-PF(N2).ptd 200428682 五、發明說明（15) 發光裝置更可包括了複數電接觸塾（electrical c ο n t a c t p a d)，經由這些電接觸墊的設計作用下係可將電流注入於發光裝置。電接觸墊係可設計成可將電流以垂直注入於發光裝置。圖樣係可局部地選自於以下各種構成方式 (c 〇 m ρ ο n e n t)或其相互間的組合，例如：於第一層之表面上形成了孔洞（h ο 1 e s )、於第一層之中形成有柱體結構 (pillars)、於第一層之中形成有連續脈紋（veins)。於部分實施例中，圖樣之樣式係選自於三角圖樣 (triangular pattern)、方型圖樣（square pattern)及格柵狀圖樣（grating pattern)。於部分實施例中，圖樣之樣式係選自於非周期性圖樣 (aperiodic patterns)、準晶圖樣（quasicrystalline patterns)、羅賓遜圖樣（Robinson pattern)及安曼圖樣 (Amman pat terns)。於部分實施例中，圖樣係為一彭羅斯圖木篆（Penrose pat tern) 〇於部分實施例中，圖樣之樣式係選自於蜂巢狀圖樣 (honeycomb patterns)、阿基米得圖樣（Archimidean patterns)。在特定實施例中，不同直徑之孔洞係可形成於圖樣（例如：蜂巢狀圖樣）之上。於部分實施例中，圖樣係可由局部形成於第一層之表面上的孔洞所構成。舉例而言，調變參數係可至少約為晶格常數之1 %及/ 或2 5%。於部分實施例中，圖樣係可對應於經實質上任意Page 18 1057-6267-PF (N2) .ptd 200428682 V. Description of the invention (15) The light-emitting device may further include a plurality of electrical contact 塾 (electrical c ntactpad). The design of these electrical contact pads can be used to A current is injected into the light emitting device. The electrical contact pad system can be designed to inject current vertically into the light emitting device. The pattern system can be partially selected from the following various constitutions (c 0 m ρ ο nent) or a combination thereof, for example: a hole (h ο 1 es) is formed on the surface of the first layer, and the first layer Pillars are formed therein, and continuous veins are formed in the first layer. In some embodiments, the pattern is selected from the group consisting of a triangular pattern, a square pattern, and a grazing pattern. In some embodiments, the pattern pattern is selected from the group consisting of aperiodic patterns, quasicrystalline patterns, Robinson patterns, and Amman pat terns. In some embodiments, the pattern is a Penrose pat tern. In some embodiments, the pattern is selected from the group consisting of honeycomb patterns and Archimedean patterns. ). In certain embodiments, holes of different diameters may be formed on a pattern (for example, a honeycomb pattern). In some embodiments, the pattern may be formed by holes formed partially on the surface of the first layer. For example, the modulation parameter may be at least about 1% and / or 25% of the lattice constant. In some embodiments, the pattern may correspond to

1057-6267-PF(N2).ptd 第19頁 200428682 五、發明說明（16) 調變之一理想圖樣（ldeal pattern)。在對於圖樣進行適當的設計下，由第一層之表面所發出之光、、泉係具有輪射模態（i i〇n瓜〇心s )之光譜 (spectrum) ’並且此輻射模態之光譜於實質上係相同於光產生區域之一特徵發射（character istlc emiss i〇n spectrum) 〇舉例而言，發光裝置係可為一發光二極體（light ennttmg dl0de)、雷射（User)或一光放大器（〇pticai ampllflers)。發光裝置係由複數有機發光二極體 (organic Ught-emitting devices，〇leds)、複數面射型發光二極體（flat surface_emittlng led 度發光二極體（HBLEDs)。於部分實施例中’第一層之表面係可具有尺寸約小於 λ/5之特徵’其中’入係為可被第一層所發射之光線的波長。於特定實施例中，發光裝置係經由封裳方式而加覆（例如：以封裝晶粒（packaged die)之型態呈現）。 :實施例經封裝之發光裝置係可以不必採用封膠材；層（encapsu 1 ant material) 〇了於部分實施例中，與第-層之表面相接一氣體（gas)(例如：空氣（air)) ’並且此氣體所具有力係略小於1 0 0托（T 〇 r r )。 1 於特定實施例中’與第-層之表面相接觸之有之折射率至少約為1。 ^1057-6267-PF (N2) .ptd Page 19 200428682 V. Description of the Invention (16) An ideal pattern for modulation. With proper design of the pattern, the spectrum of light emitted from the surface of the first layer, the spring system has a radiance mode (ii〇n 瓜〇心 s), and the spectrum of this radiation mode It is essentially the same as a characteristic emission of a light generating region (character istlc emiss i〇n spectrum). For example, the light emitting device may be a light emitting diode (light ennttmg dl0de), a laser (User) or a Opticai ampllflers. The light emitting device is composed of a plurality of organic Ught-emitting devices (OLEDs) and a plurality of surface emitting light emitting diodes (flat surface_emittlng LED light emitting diodes (HBLEDs). In some embodiments, the first The surface of the layer may have a characteristic 'wherein' is less than about λ / 5, where the wavelength is the wavelength of light that can be emitted by the first layer. In a specific embodiment, the light-emitting device is coated by means of sealing (for example, : Presented in the form of packaged die .: The packaged light-emitting device may not require the use of an encapsulation material; the layer (encapsu 1 ant material) is used in some embodiments, and the-layer A surface of the gas is connected to a gas (eg, air), and the force of the gas is slightly less than 100 Torr. 1 in a specific embodiment, the surface of the first layer The contact has a refractive index of at least about 1. ^

1057-6267-PF(N2).ptd 第20頁 200428682 五、發明說明G7) 於部分實施例中，封裝LED係包括了一蓋板（cover)，於蓋板中包括了磷材料。在適當設計蓋板之下，光產生區域所產生之光線便可經由第一層之表面發出且可與磷材料之間產生交互作用，並且經由第一層之表面發出且可與磷材料之間產生交互作用下，其經由蓋板所發出之光線於實質上係為白光。於特定實施例中’發光袋置更可包括一第一薄片與一第二薄片。第一薄片之材質於實質上係為透明，藉此係可讓光線自發光裝置而發出。於第二薄片中係包括了填材料’第二薄片係鄰接於第一薄片，並且於第一薄片、第一層之表面之間係可設置了具有折射率至少約為丨· 5之一材質（material)。在第一薄片與第二薄片之設計作用下，光產生區域所產生之光線便可經由第一層之表面發出且可與墙材料之間產生交互作用，並且經由第一層之表面發出且可與磷材料之間產生交互作用下，其經由第二薄片所發出之光線於實質上係為白光。磷材料係可設置於第一層之表面上。於部分實施例中，當光產生區域所產生之光線經由第一層之表面而自發光裝置發出時，則由第一層之表面所發出至少40%的光線係以正父於第一層之表面、且角度至多約3 0 °的方式傳送。於特定實施例中，發光裝置之填充因子（f i 1 1 i ng f a c t o r )係至少約為1 0 %及/或至多約為7 5 %。以下係藉由各實施例以呈現出一或多種特徵。1057-6267-PF (N2) .ptd Page 20 200428682 V. Description of the Invention G7) In some embodiments, the packaged LED system includes a cover, and the cover includes a phosphor material. Under the proper design of the cover plate, the light generated by the light-generating area can be emitted through the surface of the first layer and can interact with the phosphorous material, and can be emitted through the surface of the first layer and with the phosphorous material Under the interaction, the light emitted by the cover is essentially white light. In a specific embodiment, the 'light-emitting bag set may further include a first sheet and a second sheet. The material of the first sheet is substantially transparent, thereby allowing light to be emitted from the light emitting device. A filler is included in the second sheet. The second sheet is adjacent to the first sheet, and a material having a refractive index of at least about 5 can be provided between the first sheet and the surface of the first layer. (Material). Under the design of the first sheet and the second sheet, the light generated by the light generating area can be emitted through the surface of the first layer and can interact with the wall material, and can be emitted through the surface of the first layer and can be Under the interaction with the phosphor material, the light emitted by the second sheet is essentially white light. The phosphor material may be disposed on the surface of the first layer. In some embodiments, when the light generated by the light-generating area is emitted from the light-emitting device through the surface of the first layer, at least 40% of the light emitted by the surface of the first layer is the parent of the first layer. Surface, and the angle is up to about 30 °. In a specific embodiment, the fill factor (f i 1 1 i ng f a c t or r) of the light emitting device is at least about 10% and / or at most about 75%. The following is to show one or more features through the embodiments.

1057-6267-PF(N2).ptd 第21頁 200428682 五、發明說明（18) 於特定實施例中，一LED及/或一相對大型LED晶片係可相對地發出高光引出量（light extraction)。於部分實施例中，一LED及/或一相對大型LED晶片係可相對地發出高表面亮度（surface brightness)、平均表 surface brightness)、低散熱（heat dissipation)之需求或具有高散熱率、低音域（ekndue) 及/或南電力效率（power efficiency)。於特定實施例中，一LED及/或一相對大型LED晶片係可在適當的設計作用下，由LED/LEI)晶片所發出之相對少量光線係可被封裝所吸收。於部分實施例中，一封裝LED (例如：相對大型封裝 LED)係可不必藉由封膠材料以進行封裝製作，如此係可避免採用特定封膠材料時所可能產生的特定問題，例如··降低的性能（reduced performance)及/或隨著時間之函數 (function of time)上的不相容性能（inconsistent performance)。在相對長時期的操作下，藉此所提供之一封裝LED係可達到相對理想及/或可靠的性能。於特定實施例中，一LED(例如：一封裝LED，此封裝 LED係可為相對大型封裝LED)係可包括了均勻的磷材料冷層。土於部分貫施例中，經設計後之一 LED (例如：一封裝 LED ’此封裝LED係可在一特定角度範圍（par1：icular angular range)内提供所需之光線輸出（desirecj Hh十1057-6267-PF (N2) .ptd Page 21 200428682 V. Description of the Invention (18) In a specific embodiment, an LED and / or a relatively large LED chip system can relatively emit light extraction. In some embodiments, an LED and / or a relatively large LED chip can relatively emit high surface brightness, average surface brightness, and low heat dissipation requirements or have high heat dissipation and low Ekndue and / or power efficiency. In a specific embodiment, an LED and / or a relatively large LED chip can be absorbed by the package with a relatively small amount of light emitted by the LED / LEI) chip under proper design. In some embodiments, a packaged LED (for example, a relatively large packaged LED) does not need to be packaged with a sealing material, so that the specific problems that may occur when using a specific sealing material can be avoided, such as ... Reduced performance and / or inconsistent performance on function of time. In a relatively long period of operation, one of the packaged LED systems provided thereby can achieve relatively ideal and / or reliable performance. In a specific embodiment, an LED (eg, a packaged LED, which may be a relatively large packaged LED) may include a uniform cold layer of phosphorous material. In some embodiments, one of the designed LEDs (for example: a packaged LED ’This packaged LED can provide the required light output within a specific angular range (par1: icular angular range) (desirecj Hh10

200428682 五、發明說明（19) 一特定角度範圍）。於部分實施例中，一LED及/或一相對大型LED晶片係可以一相對便宜之製程以進行製作。於特定實施例中，一LED及/或一相對大型LED晶片係可在不增加成本之下、經由一工業規模（commercial s c a 1 e )之方式而進行相關的製作，並且不會造成經濟上之不可實行。為了讓本發明之上述和其他目的、特徵、和優點能更明顯易懂’下文特舉一較佳實施例，並配合所附圖示，作洋細說明如下·· 【實施方式】第1圖係表示一發光系統（light emitting system)50 之示意圖。發光系統5〇包括了複數LEDs 100所構成之一陣列（array ) 60 ’並且在陣列β〇之設計作用下，於操作過程中之陣列60係可使得複數LEDs 100(參閱以下論述）所發出之光線經由表面5 5而自發光系統5 〇發出。舉例而s ’發光系統包括了投影機（p r 0 j e c七0 r s )(例如·背投影式投影機（rear projection projector)、前投影式投影機（front projection projector))、可攜式電子裝置（portable electronic devices)(例如：行動電活（cell phone)、個人數位助理（personai digital assistants)、膝上型電腦（laptop computers)、電腦螢幕（computer monitor)、大面積標誌（iarge area200428682 V. Description of the invention (19) A specific angle range). In some embodiments, an LED and / or a relatively large LED chip can be manufactured in a relatively inexpensive process. In a specific embodiment, an LED and / or a relatively large LED chip can be produced in a commercial scale (commercial sca 1 e) without increasing cost, and will not cause economical problems. Not feasible. In order to make the above and other objects, features, and advantages of the present invention more comprehensible, a preferred embodiment is given below, and the accompanying drawings are described in detail below. [Embodiment Mode] Figure 1 It is a schematic diagram showing a light emitting system 50. The light-emitting system 50 includes an array 60 ′ composed of a plurality of LEDs 100, and under the design of the array β 0, the array 60 during operation can make the LEDs 100 (see the following discussion) emit Light is emitted from the light emitting system 50 via the surface 55. For example, the lighting system includes a projector (pr 0 jec 70 0 rs) (for example, a rear projection projector, a front projection projector), a portable electronic device ( portable electronic devices) (eg: cell phone, personal digital assistants, laptop computers, computer monitor, iarge area

1057-6267-PF(N2).ptd 第 23 頁 200428682 五、發明說明（20) signage)(例如：高速公路標諸（highway signage))、車輛内部照明（v eh i c 1 e i n t e r i 〇r 1 i gh t i ng)(例如··前座遮陽板照明（dashboard 1 i ght i ng))、車輛外部照明 (vehicle exterior lighting)(例如：車輛頭燈（vehicle headlights)、包括顏色變換頭燈（color changeable headlights)、一般照明（general lighting)(例如：辦公室高架照明（o f f i c e o v e r h e a d 1 i g h t i n g))、高亮度照明 (high brightness lighting)(例如：街燈 (streetlights))、相機閃光燈（camera flashes)、醫療裝置（medical devices)(例如：内視鏡（endoscopes))、通訊（telecommunications)(例如··用於短距離（short range)之資料傳送的塑膠纖維（plastic fibers))、保全感測（s e c u r i t y s e n s i n g)(例如：生物辨視系統 (biometrics))、積體光電（integrated optoelectronic) (例如晶片内與晶片間光學連結（i n t r a c h i p a n d interchip optical interconnects)、光學時脈（optical clocking))、軍事地域通信（military field communications)(例如：點對點通信（point to point communications))、生物感湏》j (bi osensing) ( Y列 ά 口：有機或無機物質（organic or inorganic substance)之光偵測 (photo 一 detection))、光動力 # (phot odynam i c therapy)(例如：皮膚治療（skin treatment))、夜視鏡 (night-vision goggles)、太陽能式運輸照明（s〇lar powered transit lighting)、緊急照明（emergency1057-6267-PF (N2) .ptd Page 23 200428682 V. Description of the invention (20) signage (for example: highway signage), vehicle interior lighting (v eh ic 1 einteri 〇r 1 i gh ti ng) (e.g., dashboard 1 i ght i ng), vehicle exterior lighting (e.g. vehicle headlights), including color changeable headlights , General lighting (for example: office overhead 1 ighting), high brightness lighting (for example: streetlights), camera flashes, medical devices (Eg: endoscopes), telecommunications (eg, plastic fibers for short range data transmission), securitysensing (eg, biometrics) Optics (biometrics), integrated optoelectronics (e.g., optical link between wafer and wafer) intrachipand interchip optical interconnects), optical clocking), military field communications (e.g., point to point communications), biosensory (j άά 口) : Photo-detection of organic or inorganic substance), photodynamic # (phot odynam ic therapy) (eg, skin treatment), night-vision goggles ), Solar powered transit lighting, emergency lighting

1057-6267-PF(N2).ptd 第24頁 200428682 五、發明說呢〔21) '1057-6267-PF (N2) .ptd Page 24 200428682 V. What does the invention say (21) ''

UghUng systmes)、機場跑道照明（airp〇rt rUnway ilghun£)、航線照明（airUne Ughting)、外科面罩 (surgical goggles)、穿戴式光源（wearable Hght sourcesX例如：救生背心（llfeiests))。舉例而言，背投影式I影機係為一背投影式電視（reaf pr〇]ecti〇n television);前投影式投影機係為用以顯示於一平面 (surface)(例如：螢幕（screen)或牆壁（waU))之一投影機。於部分實施例中，膝上型電腦係可包括一前投影式投影機。一能而言，表面55係由可傳送來自於LEDs 1〇〇、且撞擊在表ίϋ 5 5上之至少約5 0 % (例如：至少約3 〇 %、至少約 4 0 %、至少約5 0 %、至少約6 0 %、至少約7 〇 %、至少約8 〇 %、至少約9 0 %、至少約9 5 %)之光線的材料所製成，例如：表面 55 係 Τ 由玻璃（glass)、矽（silica)、石英（quartz )、塑膠（plastic)及聚合物（pl〇ymers)等材料所製成。於部分實施例中，於實質上是希望經由各LED 1 〇〇所產生（例如：總光線密度（total light intensity)、波長為函數之光線德度、及/或关峰發射波長（peak emissi ο η wavel emgth)之光線是相同的，例如：於顯示設施 (displaying app 1 i ca t i on s ) ( {列如：用以達成了魚羊明全彩鼻頁示器（vibrant full-color displays ))之實質單色光源 (monoclir omat i c sources)(例士口 ·· LEDs)白勺日寺序 (tiine-*sequencing)。就通訊中之光學系統而言，經由光源運行至光導件（1 i gh t gu i de )、經由光導件運行至偵測UghUng systmes), airport runway lighting (airport rUnway ilghun £), airway lighting (airUne Ughting), surgical masks (surgical goggles), wearable Hght sourcesX (eg life vests (llfeiests)). For example, the rear projection type I projector is a rear projection television (reaf pr0) ection television; the front projection type projector is used to display on a surface (for example, screen ) Or a wall (waU)) projector. In some embodiments, the laptop computer may include a front-projection projector. As a matter of fact, the surface 55 is made of at least about 50% (e.g., at least about 30%, at least about 40%, at least about 5%) capable of transmitting from the LEDs 100 and striking the watch 5 5 0%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, at least about 95%) of light, for example: surface 55 series T is made of glass ( glass), silicon (silica), quartz (quartz), plastic (plastic) and polymers (plommers) and other materials. In some embodiments, it is essentially desired to be generated by each LED 100 (for example: total light intensity, total light intensity as a function of wavelength, and / or peak emissi wavelength) The light of η wavel emgth is the same, for example: in a display app 1 i ca ti on s ({List as: used to achieve a vibrant full-color display) ) Is a monoclir omat ic sources (such as · LEDs) tiine- * sequencing. As for the optical system in communication, it runs to the light guide (1 i gh t gu i de), run to detection via light guide

1057-6267-PF(N2l) .jptd 第25頁 200428682 五、發明說明（22) ^(detector)之光線所具之一特定波長（particu；[ar w a v e 1 e n g ΐ h )係為其優點。就車輛照明中之光學系統而言，其係藉由顏色以表示信號。另一例子係為在醫療設施 (m e d i c a 1 a p p 1 i c a t i〇n s )(例如··光感測葯物活性 (photosensitive drug activation)或生物感測設施 (biosensing applications)，其所具有之波長、顏色上的反應係為優點）上之應用。於部分實施例中，其所希望的是在於經由至少一部分之L E D 1 0 0所發出的光線（例如：總光線密度（七〇 t a 1 1 i g h ΐ intensity)、波長為函數之光線密度、及/或尖峰發射波長（peak emission wavelength))係不同於其它 LED 100 所發出的光線（例如：總光線密度（total 1 ight intensity)、波長為函數之光線密度、及/或尖峰發射波長（peak emission wavelength)) 〇以一般照射（general 1 i gh t i ng)(例如：其多波長係可增加演色性指數 (CRI )(co1 or rendering index, CRI))為你J 子，CRI4系表示：相同的物件、且於對等相關溫度（c o m p a r a b 1 e correlated temperature)之參考照明系統（reference lighting systems)(例如：日光（daylight))的觀察下，這些物件在發光系統所發出光線照射下所通過時之色偏 (co 1 or sh i f t )的計量方式。其它的例子分別為：相機閃光燈（例如：於其實質上係為南C R I、且於實質上係接近中午曰光（sunlight)之CRI，其希望所拍攝之物件或主題係可具有真實色彩展現（realistic rendering))、醫療裝置1057-6267-PF (N2l) .jptd Page 25 200428682 V. Description of the invention (22) ^ (detector) has a specific wavelength (particu; [ar w a v e 1 e n g ΐ h) is its advantage. In the case of optical systems in vehicle lighting, signals are represented by colors. Another example is in medical facilities (medica 1 app 1 icati〇ns) (for example, light sensing drug activation (biosensitive drug activation) or biosensing applications), its wavelength, color The reaction system is an advantage). In some embodiments, it is desirable that the light emitted by at least a part of the LED 100 (eg, total light density (70ta 1 1 igh ΐ intensity), light density with a wavelength as a function, and / Or peak emission wavelength) is different from the light emitted by other LEDs 100 (for example: total light intensity, total light intensity as a function of wavelength, and / or peak emission wavelength )) 〇 Take general illumination (general 1 i gh ti ng) (for example, its multi-wavelength system can increase the color rendering index (CRI) (co1 or rendering index, CRI)) as your child, CRI4 series means: the same object And under the observation of reference lighting systems (e.g., daylight) of comparab 1 e correlated temperature, the color of these objects when they pass under the light emitted by the lighting system Partial (co 1 or sh ift) measurement. Other examples are: camera flash (for example: it is essentially a South CRI, and is essentially a CRI close to noon daylight (sunlight), and it is hoped that the object or subject it is photographing can have a true color display ( realistic rendering)), medical devices

1057-6267-PF(N2).ptd 第26頁 200428682 五、發明說明（23) (例如··於其實質上係具有固定CR I、且有利於組織 (tissue)、器官（organ)、體液（nuid)等之變異 (differentiation)及/ 或確定類別（identification))、背光顯示器（back 1 i ght i ng d i sp 1 ay s)(例如：其所具有之特定CR I的白光（wh i t e 1 i gh t)係相當適合於人類的眼精）。雖然在第1圖中之LEDs 1 00係以陣列方式所形成， LEDs 1 0 0亦可採用其它不同的形式。於部分實施例中，發光系統5 0包括了單一 L E D 1 0 〇。於其它特定的實施例中，藉由曲型狀陣列係可將各種光源之光線以成角度的方式導引至相同的點位置（例如：如鏡片（lens)之透鏡（〇ptic)) 之上。此外’於部分實施例中，陣列狀之發光裝置係以六角狀狀排列，如此係可達到緊密的封裝、高效能之表面亮度。又’於部分實施例中，發光裝置係沿著一鏡子 (mirror)(例如：雙色向面鏡（dichr〇ic mirr〇r))之周圍進行分佈，藉由鏡子係可對於陣列中iLEDs所發出之光線進行結合或反射。如第1圖所示，由LEDs 1〇〇所發出之光線係直接傳播至表面55之上。然而，部分實施例iLEDs 1 〇〇所發出之光線係可採取非直接方式而傳播至表面5 5之上。於部分實施例中，發光糸統5 0包括了單一 l E D 1 0 0。另外，於特定實施例中，LEDs 1 00所發出之光線係聚焦於一微型顯示 (mircodisplay)(例如：聚焦在一光閥門之上，例如··數位光處理器（digital light processor, DLP))之上。1057-6267-PF (N2) .ptd Page 26 200428682 V. Description of the invention (23) (for example, in essence it has a fixed CR I and is beneficial to tissues, organs, body fluids ( nuid) and / or differentiation and / or identification), back-lit display (back 1 i ght i ng di sp 1 ay s) (eg, white light of specific CR I (wh ite 1 i gh t) is suitable for human eye). Although the LEDs 100 in the first figure are formed in an array manner, the LEDs 100 can also take other different forms. In some embodiments, the light emitting system 50 includes a single L E D 100. In other specific embodiments, the curved array system can be used to guide the light rays of various light sources to the same point position (for example, lenses such as lenses). . In addition, in some embodiments, the array-shaped light-emitting devices are arranged in a hexagonal shape, so that a compact package and high-performance surface brightness can be achieved. In some embodiments, the light emitting device is distributed along a mirror (eg, a dichromatic mirror), and the mirror system can emit light to the iLEDs in the array. The light is combined or reflected. As shown in Figure 1, the light emitted by the LEDs 100 travels directly onto the surface 55. However, in some embodiments, the light emitted by iLEDs 1000 can be transmitted to the surface 55 in an indirect manner. In some embodiments, the light emitting system 50 includes a single l E D 100. In addition, in a specific embodiment, the light emitted by the LEDs 100 is focused on a mirco display (eg, focused on a light valve, such as a digital light processor (DLP)) Above.

l〇57-6267-PF(N2).ptd 第27頁 200428682 五、發明說明（24) 又’於部分實施例中，光線係被導引通過各種透鏡、鏡子或偏光(p 1 〇 a r i z e r s )(例如：供L C D所使用）。於特定實施例中，光線係被投射通過主、次透鏡，例如：透鏡或透鏡組。第2圖係表示以封裝晶粒（p a c k a g e d d i e )型態呈現之一發光二極體（LED) 100的側視圖。LED 100包括一多重推豐層（multi-layer stack)122，其中，多重推疊層係 δ又置在一載具（submount)120之上。多重推疊層122中係包括了·厚度為3 2 0 n m之一石夕晶摻雜（η -摻雜）氮化鎵層 (silicon doped，（n-doped) GaN layer)134，於石夕晶摻亦隹（n —摻雜）氮化鎵層134之上表面（upper surface)ll〇形成了複數開孔（openingS)150之圖樣；一結合層（b〇nding layer)124 ;厚度為 1〇〇 nm 之一銀層（siivei« iayer)i26 ; 厚度為40 nm之一鎂摻雜（p-摻雜）氮化鎵層（magnesium doped，（p-doped) GaN layer)128 ;厚度為 120 nm 之一光產生區域（light-generating region)130，於光產生區域 130上係形成有多重氮化銦鎵/氮化鎵量子井（multiple InGaN/GaN quantum wells);以及一氮化鋁鎵層（A1GaN layer)132。一n 邊接觸墊（n —side contact pad)136 係設置於石夕晶摻雜（η -摻雜）氮化鎵層丨3 4之上，並且一 p邊接觸墊（P-side contact pad)138係設置於銀層126之上。封膠材料層（encapsulant material)(具有折射率（index 〇f r e f r a c ΐ i ο η )為1 · 5之環氧樹脂（e ρ 〇 χ y ) ) 1 4 4係位於石夕晶摻雜（η-摻雜）氮化鎵層134、一蓋玻片（c〇ver slip)14〇與複〇57-6267-PF (N2) .ptd Page 27 200428682 V. Description of the invention (24) In some embodiments, the light is guided through various lenses, mirrors or polarized light (p 1 〇arizers) ( For example: for LCD). In a particular embodiment, the light is projected through the primary and secondary lenses, such as a lens or lens group. FIG. 2 is a side view of a light emitting diode (LED) 100 in the form of a package die (p a c k a g e d d i e). The LED 100 includes a multi-layer stack 122. The multi-layer stack δ is placed on a submount 120 again. The multiple push stack 122 includes a silicon doped (n-doped) gallium nitride (n-doped) GaN layer 134, which has a thickness of 320 nm. An upper surface 110 of the n-doped gallium nitride layer 134 forms a pattern of a plurality of openings 150; a bonding layer 124; and a thickness of 10 〇nm one silver layer (siivei «iayer) i26; one thickness of 40 nm one magnesium-doped (p-doped) gallium nitride layer (p-doped) GaN layer 128; thickness 120 nm A light-generating region 130 is formed on the light-generating region 130 with multiple InGaN / GaN quantum wells; and an aluminum gallium nitride layer ( A1GaN layer) 132. An n-side contact pad (136) is disposed on the Shi Xijing doped (n-doped) gallium nitride layer (34), and a p-side contact pad (P-side contact pad) 138 is disposed on the silver layer 126. Encapsulant material layer (epoxy resin (e ρ 〇χ y) with a refractive index (index 〇frefrac ΐ i ο η) of 1 · 5) 1 4 4 is located in Shi Xijing doped (η- Doped) gallium nitride layer 134, a cover slip 14o and complex

200428682 五、發明說明（25) 數支承構件（supp〇fts)142之間。封膠材料層144並沒有延伸至各開孔1 5 0之中。以下將針對LED 100所產生之光線（Hght)提出說明。相對於η邊接觸墊1 3 6，p邊接觸墊1 3 8係處於正電位 (positive potential)，如此將導至電 current)輸入至LED 100之中。當電流通過了光產生區域 1 3 0時，由矽晶摻雜（η -摻雜）氮化鎵層丨3 4所發出的電子 (electrons)與來自鎂摻雜（ρ-摻雜）氮化鎵層128之孔洞 (holes)便共同在光產生區域130之上結合，如此便可在光產生區域130產生了光線。此外，於光產生區域13〇中包含了大量的點偶極輻射源（point dipole i^diation sources)，在點偶極輻射源之作用下，由光產生區域1 3〇所產生之光線（例如：等向性（i s 〇 t r 〇 p i c a 1 1 y ))便可具備有光產生區域1 3 0之製成材料之光線波長之光譜 (spectrum)的特性。在InGaN/GaN量子井的作用下，如此便可經由光產生區域130而產生出具有約445奈米 (namomewters (nm))之尖峰波長（peak waveiength)、約 30 nm 之半高全寬（full width at half maximum)(FWHM) 之光線波長的光譜。值得注意的是，在相較於矽晶摻雜（n —摻雜）氮化鎵層 134中之載子（charge carriers)之下，鎂摻雜（ρ -摻雜）氮化鎵層1 2 8係相對地具有較低的載子移動率（m 0 b i 1 i t y )。如此一來，藉由將銀層126(為導電的）以沿著鎂摻雜（p-摻雜）氮化鎵層1 2 8之表面進行設置的作用下，由ρ邊接觸墊200428682 V. Description of the invention (25) Between the number of supporting members (supp0fts) 142. The sealant material layer 144 does not extend into each of the openings 150. The following will describe the light (Hght) generated by the LED 100. Relative to the n-side contact pads 1 3 6 and the p-side contact pads 1 3 8 are at a positive potential, so that the electric current is input into the LED 100. When a current passes through the light generating region 130, the electrons emitted from the silicon-doped (η-doped) gallium nitride layer 314 and the nitride from the magnesium-doped (ρ-doped) nitride The holes of the gallium layer 128 are combined together on the light generating region 130, so that light can be generated in the light generating region 130. In addition, a large number of point dipole radiation sources (point dipole i ^ diation sources) are included in the light generating region 13. Under the action of the point dipole radiation sources, the light generated by the light generating region 130 (such as : Isotropic (is 〇tr 〇pica 1 1 y)) can have the characteristics of the spectrum of the light wavelength of the material made in the light generating area 130. Under the action of the InGaN / GaN quantum well, a peak waveiength of about 445 nanometers (namomewters (nm)) and a full width at half maximum of about 30 nm can be produced through the light generating region 130 half maximum) (FWHM). It is worth noting that compared to the charge carriers in the silicon-doped (n-doped) gallium nitride layer 134, the magnesium-doped (ρ-doped) gallium nitride layer 1 2 The 8 series has relatively low carrier mobility (m 0 bi 1 ity). In this way, by placing the silver layer 126 (which is conductive) along the surface of the magnesium-doped (p-doped) gallium nitride layer 1 2 8, the ρ edge contact pad

1057-6267-PF(N2).ptd 第29頁 2004286821057-6267-PF (N2) .ptd Page 29 200428682

138至鎂摻雜（P-摻雜）氮化鎵層128、光產生區域130之電荷注入（charge injection)的均勻度（unif〇rmity)是可以有效地被提高的，同時亦可減少LE D 1 0 0之電阻 (electrical resistance)及 / 或提高 LED 1〇〇之注入效率 (injection efficiency)。此外，由於矽晶摻雜（n—摻雜）氛化叙層134具有車父南之載子移動率（courier ' mobi 1 i ty)，則電子便可自n邊接觸墊136而快速通過氮化鋁鎵層132、矽晶摻雜（n-摻雜）氮化鎵層134，於實質上便可使得在產生區域130之中、且通過產生區域丨3〇之任何位置上的電流密度（current density)處於均勻狀態。再者，由於銀層126具有相對較高的導熱性（thermal conductivity)，如此便可藉由銀層126做為LED 1〇〇之散熱器（heat sink)(將熱量經由多重推疊層122、以垂直的方式而傳遞至載具120)。由光產生區域130所產生之至少一部分的光線係可被導引至銀層1 26之上。隨後，經由銀層丨26所反射的光線係可經由石夕晶摻雜（η -摻雜）氮化鎵層丨3 4之上表面1 1 〇、朝向 LED 100之外部發出，或是銀層126所反射之光線係可經由 LED 100中之半導體材料（semic〇nduct〇r materiai)吸收而升v成了孔’同對（electron-hole pair)，並且在孔洞對於光產生區域130之中進行結合的作用下，則於光產生區域130中便可產生光線。同樣地，由光產生區域13〇所產生之部分的光線係可被導引至n邊接觸墊136，並且藉由n邊接觸墊136之底側（underside)的製成材料（例如：鈦（Ti)/The uniformity of the charge injection of the 138 to Mg-doped (P-doped) gallium nitride layer 128 and the light-generating region 130 can be effectively improved while reducing the LE D Electrical resistance of 100 and / or improvement of injection efficiency of LED 100. In addition, since the silicon doped (n-doped) atmosphere layer 134 has a carrier mobility (courier 'mobi 1 i ty) of the south, the electrons can pass the nitrogen from the n-side contact pad 136 quickly through nitrogen. The aluminum gallium layer 132 and the silicon-doped (n-doped) gallium nitride layer 134 can substantially make the current density at any position in the generation region 130 and through the generation region 30 ( current density) is in a uniform state. Furthermore, because the silver layer 126 has a relatively high thermal conductivity, the silver layer 126 can be used as a heat sink for the LED 100 (the heat is passed through multiple push-stacks 122, Passed to the carrier 120 in a vertical manner). At least a part of the light generated by the light generating region 130 may be directed onto the silver layer 126. Subsequently, the light reflected through the silver layer 26 can be emitted through the upper surface of the crystalline silicon doped (η-doped) gallium nitride layer 3 1 1 10 toward the outside of the LED 100, or the silver layer. The light reflected by 126 can be absorbed by the semiconductor material (semiconductor materiai) in LED 100 to become an electron-hole pair, and it is carried out in the hole-to-light-generating area 130. Under the combined effect, light can be generated in the light generating region 130. Similarly, the part of the light generated by the light generating region 13 can be guided to the n-side contact pad 136, and made of a material (eg, titanium ( Ti) /

第30頁 200428682 五、發明說明（27) 鋁（A1)/鎳（Nl)/金（Au))係對於光產生區域13〇所產生之至少一部分的光線進行反射。因此，被導引至_接觸塾136 的光線係可經由η邊接觸墊136進行反射，並且經反射後的光線係可經由矽晶摻雜（η_摻雜）氮化鎵層134之上表面 110(例如：來自於銀層126所反射）、朝向LED 1〇〇之外部發出’或是被導引至η邊接觸墊136、且由η邊接觸墊工36所反射之光線係可經由LED 1 0 〇中之半導體材料吸收而形成了一孔洞對，並且在孔洞對於光產生區域丨3 〇之中進行結合的作用下’則於光產生區域1 3 0中便可產生光線（例如：藉由或不必藉由銀層1 2 6所反射）。如第2、3圖所示，LED 100之表面110並非平坦狀，於此表面11 0上包括了由複數開孔1 5 〇所構成之修正三角形圖樣（modified triangular pattern) 〇 —般而言，開孑匕150 之深度（depth)可為任意值，並且開孔1 50之直徑、相鄰開孑L150之最近間隔（nearest spacing)是可以任意改變的。除非可由其它方式加以註解，否則以下便採用數值計算 (numerical calculations)之結果而對於各圖式進行清楚說明：開孔150的深度146約為280 nm ;非零直徑 (non-zero diameter)約為160 nm ;相鄰開孔150之最近間隔約為220 nm ;以及折射率為1. 0。由於三角形圖樣係經過了調變處理，於相鄰圖樣1 5 0之最近中心間距 center-to-center distance)的大小係”於（a- △&)與 a，係表示三角形圖樣之晶格常數 π △ aπ係表示異有長度之尺度 (a+Aa)之間，其中 (lattice constant) A \ . t » M t| -μ 一 --么 Jij· 1^1 令日古Page 30 200428682 V. Description of the invention (27) Aluminum (A1) / nickel (Nl) / gold (Au)) reflects at least a part of the light generated by the light generating region 130. Therefore, the light system guided to the _contact 塾 136 can be reflected by the η-side contact pad 136, and the reflected light system can be passed through the upper surface of the silicon-doped (η-doped) gallium nitride layer 134. 110 (for example: reflected from the silver layer 126), emitted towards the outside of the LED 100, or guided to the n-side contact pad 136, and the light reflected by the n-side contact pad worker 36 can pass through the LED The semiconductor material in 1 0 0 absorbs to form a hole pair, and under the combined effect of the holes in the light generating area 3 0 ', light can be generated in the light generating area 1 3 0 (for example: borrow (With or without reflection by the silver layer 1 2 6). As shown in Figures 2 and 3, the surface 110 of the LED 100 is not flat, and a modified triangular pattern composed of a plurality of openings 150 is formed on the surface 110. Generally speaking, The depth of the slit 150 can be any value, and the diameter of the opening 150 and the nearest spacing of adjacent slits L150 can be arbitrarily changed. Unless it can be annotated in other ways, the following figures are clearly explained using the results of numerical calculations: the depth 146 of the opening 150 is about 280 nm; the non-zero diameter is about 160 nm; the closest interval between adjacent openings 150 is about 220 nm; and the refractive index is 1.0. Since the triangle pattern has undergone modulation processing, the size of the nearest center-to-center distance between the adjacent patterns of 150 is "(a- △ &) and a, which represent the lattice of the triangle pattern. The constant π △ aπ means between the scales (a + Aa) of different lengths, where (lattice constant) A \. T »M t | -μ 一-么 Jij · 1 ^ 1 令日古

1057-6267-PF(N2).ptd 第31頁 200428682 五、發明說明（28) (dimensions of iength)的調變參數（detuning parameter)，於此之調變係可根據任意方向（rand〇m directions)而得。為有效提高led 1〇〇所發出之光引出量 (1 1 ght extract i on)(請參閱以下說明），調變參數△ a係約為理想晶格常數a之至少l%(〇ne percent)(例如：至少約為2%、至少約為3%、至少約為4%、至少約為5%)，並且/ 或最多約為理想晶格常數之25%(例如：最多為20%、最多為1 5 %、最多為1 〇 % )。於部分實施例中，相鄰圖樣丨5 〇之最近中心間距係可採用介於（a — △ a )與（a + △ a)之間的任意值，於實質上便可對於圖樣1 5 〇進行任意的調變。基於複數開孔1 5 0所構成之修正三角形圖樣可知，藉由非零調變參數係可提高LED 100之引出效率。請參閱第4 圖，基於上述之關於LED 1 0 0的說明可知，當調變參數△ a 由零（zero)增加至〇.l5a左右時，於LED 100中之電磁場 (electromagnetic fields)之數學模型（numerical mode ling)(將於下文中提出說明）中所示之發光裝置的引出效率係由0 . 6 0增加至〇 . 7 0。於第4圖中，引出效率係經由三維有限差分時域 (FDTD)法（three-d i mens i ona1 finite-difference time-domain (FDTD) method)以估算出在馬克士威方程 (Maxwell’s equations)下之LED 100之内部光線、外側光線之大小。舉例而言：K.S. Kunz and R.J. Luebbers， The Finite-Difference Time-Domain Methods (CRC, Boca Raton， FL， 1993) 、 A· Taflove， Computational1057-6267-PF (N2) .ptd Page 31 200428682 V. Explanation of the invention (28) (dimensions of iength) The modulation parameter (detuning parameter), where the modulation system can be based on any direction (random direction) ). In order to effectively increase the light extraction amount (1 1 ght extract i on) emitted by led 100 (see the following description), the modulation parameter △ a is at least 1% (〇ne percent) of the ideal lattice constant a. (For example: at least about 2%, at least about 3%, at least about 4%, at least about 5%), and / or at most about 25% of the ideal lattice constant (for example: at most 20%, at most 15%, up to 10%). In some embodiments, the nearest center distance between adjacent patterns 丨 5 〇 can be any value between (a-△ a) and (a + △ a). Perform arbitrary modulation. Based on the modified triangle pattern formed by the complex openings 150, it can be known that the non-zero modulation parameter system can improve the extraction efficiency of the LED 100. Please refer to Fig. 4. Based on the above description of the LED 100, it can be known that when the modulation parameter △ a increases from zero to about 0.15a, the mathematical model of the electromagnetic fields in the LED 100 The extraction efficiency of the light-emitting device shown in (numerical mode ling) (to be described later) is increased from 0.6 to 0.7. In Figure 4, the derived efficiency is estimated using the three-dimensional finite difference time domain (FDTD) method (three-d i mens i ona1 finite-difference time-domain (FDTD) method) to estimate the Maxwell's equations. The size of the internal light and external light of the LED 100 below. For example: K.S. Kunz and R.J. Luebbers, The Finite-Difference Time-Domain Methods (CRC, Boca Raton, FL, 1993), A. Taflove, Computational

1057-6267-PF(N2).ptd 第32頁 200428682 五、發明說明（29)1057-6267-PF (N2) .ptd Page 32 200428682 V. Description of Invention (29)

Electrodynamics: The Finite一Difference Time—Domain Method (Artech House， London， 1995)等已在本發明中參考併入。為了呈現出具有特定圖樣150之LED 1 00的光學行為（optical behaviour)，於FDTD計算中之輸入參數 (input parameters)包括了中心頻率（center f r e q u e n c y )、於光產生區域1 3 0中之點偶極輻射源所發射之光線的頻寬（bandwidth)、於多重推疊層122中之各層結構之尺寸與介電特性（dimension and dielectric p r ◦ p e r t i e s )，以及位於圖樣1 5 0中之各開孔之間的直徑、深度、最近相鄰距離（NND)(nearest neighbor distances (_))。於特定的實施例中，LED 1 0 0所使用之引出效率資料 (extraction efficiency data)係、採用了如下所示之FDTD 法而加以計算。FDTD法係用以解決全向量時間依賴馬克士威方程（full-vector time-dependent Maxwell’s equations) ·· V xE = -μ' dR dty ^ π δΈ dP dt dt 其中’經由可極化性（p〇larizabiiity)戶=戶i +戶2+...+4 係可捕捉光產生區域130之量子井區域（qUantum wells region)、p-接觸層（p-contact layer)126、於LED 100 中之其匕層結構的依頻響應（frequency-dependent r e s ρ ο n s e)。4項目係為根據材料之各種可極化性之不同Electrodynamics: The Finite-Difference Time-Domain Method (Artech House, London, 1995) and the like have been incorporated by reference in the present invention. In order to show the optical behavior of the LED 100 with a specific pattern 150, the input parameters in the FDTD calculation include the center frequency and the point evenness in the light generating area 130. The bandwidth of the light emitted by the polar radiation source, the dimensions and dielectric properties of each layer structure in the multiple push stack 122, and the openings in the pattern 150 Diameter, depth, nearest neighbor distance (NND) (nearest neighbor distances (_)). In a specific embodiment, the extraction efficiency data used in the LED 100 is calculated using the FDTD method shown below. The FDTD method is used to solve the full-vector time-dependent Maxwell's equations. · V xE = -μ 'dR dty ^ π δΈ dP dt dt where' via polarizability (p. larizabiiity) household = household i + household 2 + ... + 4 is a quantum well region (qUantum wells region) that can capture light generation region 130, p-contact layer (126), others in LED 100 Frequency-dependent res ρ ο nse. 4 items are based on the different polarizability of materials

1057-6267-PF(N2).ptd 第33頁 200428682 五、發明說明（30) 提供（different contributions)所進行實證推導 (emp i r i ca 1 1 y)而得之數值（例如：用於束缚電子振i (bound electron oscillations)之極 γ匕響靡 (polarization response)、用於自由電子振盈（free electron oscillations)之極化響應）。特別的是， dt2 dt 其中，極化（polar izat ion)係相當於一介電常數 (dielectric constant) Σ 為了方便數值上的計算，於此僅考量了封膠材料層 144、銀層126、以及位於封膠材料層144與銀層126之&的各層結構。由於此一估算係假設封膠材料層丨44、銀層^ Μ 具有足夠的厚度，如此LED 100之光學性能（〇ptical performance)將不會受到環境層（surrounding iayers)之影響。於LED 100中，銀層126、光產生區域13〇等相關結構（re levant structure)係假設具有一依頻介電常數 (frequency dependent dielectric constant)，而其它的結構則不假設具有依頻介電常數。值得注意的是，於部分實施例中之LED 1 00之封膠材料層1 44、銀層1 26之間係包括了複數附加金屬層（additional metal layers)，其中，各附加金屬層係分別具有其所對應之依頻介電常數。另一值得注意的是，銀層1 2 6 (以及LED 1 〇〇中之任何其它1057-6267-PF (N2) .ptd Page 33 200428682 V. Explanation of the invention (30) Values obtained by empirical derivation (emp iri ca 1 1 y) of different contributions (for example: used to restrain electronic vibration The polarization response of i (bound electron oscillations) is used for polarization response of free electron oscillations. In particular, dt2 dt, where the polar izat ion is equivalent to a dielectric constant Σ In order to facilitate numerical calculations, only the sealant material layer 144, the silver layer 126, and The layers of the sealant material layer 144 and the silver layer 126 are each structured. Since this estimation assumes that the sealant material layer 44 and the silver layer ^ M have sufficient thickness, the optical performance of the LED 100 will not be affected by surrounding iayers. In LED 100, the silver layer 126, the light generating region 13 and other related structures are assumed to have a frequency dependent dielectric constant, and other structures are not assumed to have a frequency dependent dielectric constant. constant. It is worth noting that, in some embodiments, the sealing material layer 1 44 and the silver layer 1 26 of the LED 100 include a plurality of additional metal layers, wherein each additional metal layer has Its corresponding dielectric constant according to frequency. It's also worth noting that the silver layer 1 2 6 (and any other of the LED 1 100)

1057-6267-PF(N2).ptd 第34頁 200428682 五、發明說明（31) 金屬層）係同時對於束缚電子（b〇und electr〇n)、自由電子（free electron)而具有一依頻項（frequency dependent term)，但是光產生區域13()卻僅對於束缚電子而具有依頻項、但卻對於自由電子卻不具有依頻項。於其它的貫施例中’當進行介電常數之依頻的模型計算時，其它例如電聲子相互作用（electr〇n —phQnQn ” mteractwns)、原子極化（at〇mic p〇larizati〇ns)、離子極化（1〇rnc polar lzatlons)及/ 或分子極化（m〇lecular polarizations)等項亦可同時列入考量。藉由將若干個處於任意位置、固定電流 (randomly-placed，constant-current)之雙極聲源 (dipole sources)合併於光產生區域13〇，如此便可完成了對於光產生區域1 3 0之量子井區域所發出之光線的模型化處理’於光譜幅寬（spectrai width)之各射出短高斯脈衝（emitting short Gaussian pulses)係相等於真實量子井（actual quantum well)之射出短高斯脈衝，並且各射出短咼斯脈衝係具有任意初始相位（r a n d 〇 m i n i t丨a 1 phase)、開始時間（start-time)。為了處理LED 100之上表面110中之各開孔150所構成之圖樣’於侧向（lateral direction)上係採用了一較大超級單體（s u p e r c e 1 1)，並且於超級單體中係同時搭配了周期性邊界條件（periodic boundary conditions)之使用。在上述方式作用下，除了可以協助大型（例如：邊緣 (edge)大於OQi隨）裝置之尺寸上的模擬之外，當所有偶1057-6267-PF (N2) .ptd Page 34 200428682 V. Description of the Invention (31) The metal layer) has a frequency-dependent term for both bound electrons and free electrons. (Frequency dependent term), but the light generating region 13 () has a frequency dependent term only for the bound electrons, but does not have a frequency dependent term for the free electrons. In other examples, when the frequency-dependent model calculation of the dielectric constant is performed, other such as electric phonon interactions (electrón-phQnQn) mteractwns, atomic polarization (at〇mic PolarizatiOns) ), Ionic polarization (10rnc polar lzatlons) and / or molecular polarizations (molecular polarizations) and other items can also be considered at the same time. By placing several in any position, fixed-current (constantly-placed, constant) -current) dipole sources are merged into the light-generating region 13, so that the model processing of the light emitted from the quantum well region of the light-generating region 130 can be completed. Each emitting short Gaussian pulses of spectrai width is equivalent to the emitting short Gaussian pulses of an actual quantum well, and each emitting short Gaussian pulse system has an arbitrary initial phase (rand 〇minit 丨 a 1 phase), start-time. In order to process the pattern formed by the openings 150 in the upper surface 110 of the LED 100 'in the lateral direction, A larger supercell (superce 1 1), and it uses periodic boundary conditions in the supercell at the same time. In the above way, in addition to assisting large (such as: edge (edge ) Is larger than OQi with)

1057-6267-PF(N2).ptd 第35頁 200428682 五、發明說明（32) 極源（dipole sources)之能量完全發出、且直到系統内完全不具任何能量之時，全演算方程（ful 1 ev〇lutic)n e q u a t i ο n s )仍可及時完成相關的運算。在模擬過程中，總能量（total energy)之發出、經由上表面11〇所引出之能量流（energy flux)、由量子井與η摻雜層所吸收之能量均被監控。在藉由傅立葉之時間（time)與空間（space)的轉換之後，除了可以得到引出能量流之頻率、角度解析資料 (frequency and angel resolved data)之夕卜，同日寺可對於角度、頻率解析引出效率（angle- and frequency-resolved extraction efficiency)進行計算。藉由光產生區域1 3 0所發出之總能量（t o t a 1 e n e r g y emitted)、光產生區域130之實驗所得發光 (experimentally known luminescence)白勺相互 g己合下，如此便可得到了用於給定電性輸入（g i v e n e 1 e c t r i c a 1 input)之單位亮度（lumen/per)、單位晶片面積之立體角度（solid angle/per chip area)之絕對角度解析引出 (absolute angle-resolved extraction) ° 可以確信的是，經由調變後之圖樣（d e t u n e d pattern)150的作用下，光產生區域130所產生、且經由 LED 1 00之上表面1 1 0所發出之光線的引出效率是可以被提高，同時由於各開孔1 5 0可以根據圖樣型態而建立一介電函數（dielectric function)，藉此介電函數係可以在石夕晶摻雜（η-摻雜）氮化鎵層134之中進行空間上的改變。基於上述可知，實際結果並不等同於根據理論（theory )下之1057-6267-PF (N2) .ptd Page 35 200428682 V. Description of the Invention (32) When the energy of the dipole sources is completely emitted and there is no energy in the system at all, the full calculus equation (ful 1 ev 〇lutic) nequati ο ns) can still complete related operations in time. During the simulation process, the emission of total energy, the energy flux drawn through the upper surface 110, and the energy absorbed by the quantum well and the η-doped layer are monitored. After the conversion of Fourier time and space, in addition to the frequency and angle resolved data that can be used to derive the energy flow, Tongri Temple can also derive the angle and frequency analysis. Efficiency (angle- and frequency-resolved extraction efficiency) is calculated. The total energy (tota 1 energy emitted) from the light-generating region 130 and the experimentally known luminescence of the light-generating region 130 are combined with each other, so that it can be obtained for a given Electrical input (givene 1 ectrica 1 input) unit brightness (lumen / per), solid angle / per chip area (absolute angle-resolved extraction) ° It can be sure that Under the effect of the detuned pattern 150, the extraction efficiency of the light generated by the light generating area 130 and emitted from the upper surface 1 1 0 of the LED 100 can be improved. The hole 1 50 can establish a dielectric function according to the pattern type, so that the dielectric function can be spatially performed in the Shi Xijing doped (η-doped) gallium nitride layer 134. change. Based on the above, the actual results are not the same as those based on the theory.

1057-6267-PF(N2).ptd 第36頁 200428682 五、發明說明（33) 計异結果。再者，根據上述之結果亦會改變了輻射模態 (rad laU on modes)(亦即，由上表面11〇所發出的發光模式（light modes))、導引模態（guided modes)(亦即，限制於多重推疊層122之中的發光模式）之密度。另外，在不具有圖樣1 5 0之作用、且經由上述之輻射模態與導引模態的改變下，於LED 100中之部分光線係以散射方式（例如：布拉格散射（Bragg scattered))射入於導引模態之中，同時這些散射模式亦可能滲漏至輻射模態之中。於特定的實施例中，圖樣1 5 0係可消除所有位於LED 1 0 0之中的導引模態。可以確信的是，晶格（1 a 11 i c e )的調變效應（e f f e c t of detuning)係可藉由具有點散射部位（p〇int scattering sites)之水晶（crystal)的布拉格散射（Bragg scattering off)方式而加以了解。以距離d相互間隔之複數晶格平面（lattice planes)中之完美晶格（perfect lattice)而言，波長 λ 之單色光（m〇n〇chr〇matic 係根據布拉格條件（Bragg condition)n；l=2dsin0、而採用角度（a n S 1 e Θ進亍散射’其中’ η係表示散射之階數 (order) ’於此之一整數（integer)。然而，就具有光譜幅寬△又/又、且以一立體角度射入ΔΘ之光源而言，在藉由調變參數（detuning parameter) Aa對於晶格部位 (lattice sites)之間隔（spacing)進行調變作用下，布拉格條件係可以變得較為寬鬆。因此，在藉由光譜幅寬、空1057-6267-PF (N2) .ptd Page 36 200428682 V. Description of the invention (33) Distinguishing results. In addition, according to the results described above, the radiation mode (rad laU on modes) (that is, the light modes emitted by the upper surface 110), the guided modes (guided modes) (also That is, the density is limited to the light emission pattern in the multiple push stack 122. In addition, without the effect of the pattern 150, and through the above-mentioned change of the radiation mode and the guide mode, part of the light in the LED 100 is scattered (eg, Bragg scattered). Into the guidance mode, these scattering modes may also leak into the radiation mode. In a specific embodiment, the pattern 150 can eliminate all the guiding modes located in the LED 100. It is believed that the effect of detuning of the lattice (1 a 11 ice) can be achieved by Bragg scattering off of crystals having point scattering sites. Way to understand. In terms of perfect lattices in lattice planes spaced apart from each other by a distance d, monochromatic light with a wavelength of λ (monochromatic) is based on the Bragg condition n; l = 2dsin0, and the angle (an S 1 e Θ enters the scattering 'where' η represents the order of scattering 'is an integer). However, it has a spectral width △ and / For a light source that projects into ΔΘ at a three-dimensional angle, the Bragg condition can be changed by adjusting the spacing parameter of the lattice sites by a detuning parameter Aa. More loose. Therefore, the

l〇57-6267-PF(N2).ptd 第37頁 200428682 五、發明說明（34) 間發射源輪廓（s p a t i a 1 e m i s s i ο n p r 〇 f i 1 e )的作用下，晶格的調變係可提高圖樣之散射有效性（scatter i ng effectiveness)、接受角度（angular acceptance)。基於上述說明可知，除了可藉由具有非零調變參數l〇57-6267-PF (N2) .ptd Page 37 200428682 V. Description of the invention (34) Under the action of the emission source profile (spatia 1 emissi ο npr 〇fi 1 e), the modulation system of the lattice can be improved Pattern scatter effectiveness (angular acceptance). Based on the above description, in addition to having non-zero modulation parameters,

(non-zero detuning parameter) Z\a 之修正三角形圖樣 1 5 0以提高LED 1 0 0所發出的光引出量之外，其它的圖樣亦可提高LED 100所發出的光引出量。當決定是否藉由所給定圖樣（given pattern)以提高LED 100所發出之光引出量及/或採用那何種開孔圖樣是可以提高LED 1 0 0所發出之光引出量時，於進行相關的數值計算之前係必須先以物理圖像（physical insight)的方式估算出一基本圖樣（basic pattern)，藉由基本圖樣以提高LED 1 00所發出之光引出量 ° 此外，由於介電函數係可根據圖樣1 5 〇而進行空間上的改變，如此便可藉由介電函數之傅立葉轉換（F〇ur ier transformation)之考量方式以對於LED 1 00的引出效率進行了解。第5圖係表示針對一理想三角形晶格（丨d e a丄 triangular lattice)之傅立葉轉換提出說明。沿著平面(non-zero detuning parameter) Z \ a's modified triangle pattern 150 is used to increase the amount of light emitted by LED 100, other patterns can also increase the amount of light emitted by LED 100. When deciding whether to use a given pattern to increase the amount of light emitted by the LED 100 and / or which aperture pattern can be used to increase the amount of light emitted by the LED 100, proceed Before the relevant numerical calculations, a basic pattern must be estimated in the form of physical insight. The basic pattern can be used to increase the amount of light emitted by the LED 100. In addition, because of the dielectric The system can be changed spatially according to the pattern 150. In this way, the extraction efficiency of the LED 100 can be understood by considering the Fourier transformation of the dielectric function. Fig. 5 shows a description of the Fourier transformation of an ideal triangular lattice. Along the plane

内波向量（in-plane wavevector)k之特定方向 (part icular direct ion)進入之光線的引出係與沿著平面内波向量k’（亦即，平行於圖樣150)進入所有輻射模態 (radiation modes)之發射源（source emissi〇n)s 有相互的關連性’其中’平面内波向量k係可經由平面内波向量 k’加上（addition)或扣除（sub tract ion) 了倒晶格向量The extraction of light rays entering in a particular direction (part icular direct ion) of the in-plane wavevector k and entering all radiation modes along the in-plane wave vector k '(that is, parallel to the pattern 150) modes) of the source (emissioon) s have a mutual correlation 'wherein the in-plane wave vector k can be added or subtracted via the in-plane wave vector k' by adding an inverted lattice vector

200428682 五、發明說明（35)200428682 V. Description of Invention (35)

(reciprocal lattice vector)G 而得，亦即，k=k， + Q 引出效率係正比於其所相對之介電函數£ G之傅立葉''分^ (Fourier component) Fk，其關係式為此外，材料層之中的光線傳播係可以滿足方程式 k2(平面内（in-piane)) + k2(法向（n〇rmai))二 ε ( 〇/c)2 中，經實際所考量下所得到之倒晶格向量G的最大1 ’其 (maximum)係固定受限於光產生區域丨3〇所發出之光線 (ω )、光產生區域1 3 〇之介電常數。如第5圖所示，逆=: 空間群（reciprocal space)之環型（ring)係通常稱之^光能階（1 ight line)。由於光產生區域13〇所具有的是有限頻見（finite bandwidth)，其所形成之光能階則將是環狀結構（annul us)，並且為了便於說明，於此係以單色光源 (monochromatic source)之光能階提出介紹。同樣地，光、、泉於封膠材料層中的傳播係受限於光能階（於第5圖中之内 ft:61' Clrcle))。因此，在增加了介電函數Q之傅立莱分，Fk的同時，於封膠材料層内之光能階上、各平面内波向$k之方向上的引出效率便可以提高，其中，於封膠 3料層中的光能階係等於封膠材料層中之倒晶格向量G點格愛 ^日里、對於封膠材料層内之光能階上之倒晶口 °、㉙:占之放射強度（scattering strength)(介電函數） eG的增$之總和。當所選擇的圖樣可以提高引出效率時，則便可採用物理圖像來進行估算。 200428682(reciprocal lattice vector) G, that is, k = k, + Q The extraction efficiency is proportional to its relative dielectric function £ G Fourier component ^ (Fourier component) Fk, and its relationship is in addition, The light propagation system in the material layer can satisfy the equation k2 (in-piane) + k2 (normal (n〇rmai)) two ε (〇 / c) 2, which can be obtained under actual consideration. The maximum 1 ′ of the inverted lattice vector G is fixedly limited by the dielectric constant of the light (ω) emitted from the light-generating region 3 and the light-generating region 13. As shown in Figure 5, the ring type of the inverse =: reciprocal space is commonly referred to as the 1 ight line. Since the light generating region 13 has a finite bandwidth, the light energy level formed by it will be an annul us structure, and for the sake of explanation, a monochromatic light source (monochromatic light source) is used here. The light level of the source) is introduced. Similarly, the propagation of light in the sealant material layer is limited by the light energy level (within ft: 61 'Clrcle in Figure 5). Therefore, while increasing the Fourier fraction and Fk of the dielectric function Q, the extraction efficiency at the optical energy level in the sealant material layer and the direction of waves in each plane in the direction of $ k can be improved. Among them, The light energy level in the sealant 3 material layer is equal to the inverted lattice vector G point in the sealant material layer. For the inverted crystal port on the light energy level in the sealant material layer, °, ㉙: The scattering strength (dielectric function) is the sum of the increase in eG. When the selected pattern can improve the extraction efficiency, the physical image can be used for estimation. 200428682

200428682 五、發明說明（37) 定實施例中，LED 1 0 0所具有之填充因子係至少約為 10%(例如··至少約為15%、至少約為20%)及/或至多約為 9 0%(例如：至多約為80%、至多約為70%、至多約為60%)。由上述所提出之修正三角形圖樣可知’於理想三角晶格（triangular lattice)的各位置之上、圖樣中之開孔的定位係與調變參數之間有關連性；此外，在將圖樣中心保持在理想三角圖樣（ideal triangular pattern)的各位置上時，則藉由對於理想三角圖樣中之開孔進行修改的作用下係仍可以得到此一修正（調變（detuned))三角形圖樣，於第8圖中之實施例所示即為此一修正（調變）三角形圖樣。於此實施例中，就光引出量中之增量 (enhancement)、用以進行相對數值計算（corresponding numerical calculations) ^ ^ /'i：(methodology)、以及對於具有第8圖之圖樣之發光二極體中所提高之引出效率的物理解釋（physical explanation)而言，均與上述方式相同。於特定的實施例中，修正（調變）圖樣中之開孔係可經由理想位置而進行倒置（d i s p 1 a c e d )，並且位於理想位置之開孔係具有直徑上的變化。於其它實施例中，藉由不同型式的圖樣係有助於發光二極體之光引出量的提昇，這些型式的圖樣包括了複雜周期性圖樣與非周期性圖樣（complex periodic patterns and nonperiodic patterns)。於複雜周期十生圖樣之中，其每一單體（u n i t c e 1 1)係具有超過了一個以上的特徵 (feature)，並且此單體係以周期性樣態（peri〇(iic200428682 V. Description of the invention (37) In certain embodiments, the filling factor of LED 100 is at least about 10% (for example, at least about 15%, at least about 20%) and / or at most about 90% (for example: at most about 80%, at most about 70%, at most about 60%). From the above-mentioned modified triangle pattern, we can know the correlation between the positioning system of the openings in the pattern and the modulation parameters above the positions of the ideal triangular lattice. In addition, the center of the pattern is maintained. At various positions of the ideal triangular pattern, this modified (detuned) triangular pattern can still be obtained by modifying the openings in the ideal triangular pattern. The example in Fig. 8 shows a modified (modulated) triangular pattern for this purpose. In this embodiment, the enhancement in the light extraction amount is used to perform relative numerical calculations ^ ^ / 'i: (methodology), and for the light emitting two with the pattern of FIG. 8 The physical explanation of the improved extraction efficiency in the polar body is the same as that described above. In a specific embodiment, the openings in the modified (adjusted) pattern can be inverted from a desired position (d i s p 1 a c e d), and the openings at the ideal position have a change in diameter. In other embodiments, different types of patterns are used to improve the light extraction of light-emitting diodes. These patterns include complex periodic patterns and nonperiodic patterns. . In the complex cycle ten patterns, each unit (u n i t c e 1 1) has more than one feature, and the single system has a periodic pattern (peri〇 (iic

1057-6267-PF(N2).ptd 第41頁 200428682 五、發明說明（38) f a s h i ο η )進行重覆。舉例而言，複雜周期性圖樣包括了蜂巢狀圖樣（honeycomb patterns)、蜂巢基底圖樣 (honeycomb base patterns) 、 2x2 基底圖樣（2x2)(base patterns)、環狀圖樣（ring patterns)及阿基米得圖樣 (Archimidean patterns)。以下之實施例中，於複雜周期性圖樣中之部分開孔係可具有單一直徑，而其它的開孔則可具有較小直徑。另外，非周期性圖樣係為單體之上不具有平移對稱性（translational symmetry)之圖樣，其中，此單體之長度係至少為光產生區域1 3 0所產生之尖峰波長的5 0倍。舉例而言，非周期性圖樣包括了非周期性圖樣 (aperiodic patterns)、準晶圖樣（quasicrystalline patterns)、羅賓遜圖樣（Robinson pattern)及安曼圖樣 (Amman patterns) 〇第9圖係表示針對LED 1 0 〇、兩種不同的非周期性圖樣之數值計算資料，其中，於非周期性圖樣中之部分開孔係具有特定直徑（particular diameter)，而於非周期性圖樣中之其它的開孔則可具有較小直徑。於第9圖中之數值計算資料係表示了具有較小直徑之開孔（)、其直徑由〇 nm變化至95 nm時之引出效率（直徑為8〇 nm之較大開孔）的表現（behavior)。第2圖中之LED 1〇〇之所使用參數的計算下以得到了第7圖所示之資料，但這些參數並不包括了根據圖形中之X轴上之填充因子之數值而變化的開孔直徑。為了不受到理論上的限制，在多孔尺寸（mul tip le ho 1 e s i z es)的作用下係可允許由圖樣中之多重周期性1057-6267-PF (N2) .ptd page 41 200428682 V. Description of the invention (38) f a s h i ο η) is repeated. For example, complex periodic patterns include honeycomb patterns, honeycomb base patterns, 2x2 base patterns, ring patterns, and Archimedes. Archimedean patterns. In the following embodiments, part of the openings in the complex periodic pattern may have a single diameter, while other openings may have a smaller diameter. In addition, the aperiodic pattern is a pattern with no translational symmetry on the monomer, wherein the length of the monomer is at least 50 times the peak wavelength of the light generating region 130. For example, aperiodic patterns include aperiodic patterns, quasicrystalline patterns, Robinson patterns, and Amman patterns. Figure 9 shows that for LED 1 0 〇. Numerical calculation data of two different aperiodic patterns. Among them, part of the openings in the aperiodic pattern have a specific diameter, while other openings in the aperiodic pattern can be used. Has a smaller diameter. The numerical calculation data in Figure 9 shows the behavior of the openings with smaller diameters () and the extraction efficiency (larger openings with a diameter of 80 nm) when the diameter is changed from 0 nm to 95 nm. ). The calculation of the parameters used for LED 100 in Figure 2 has been obtained to obtain the data shown in Figure 7, but these parameters do not include the opening that changes according to the value of the fill factor on the X axis in the graph. Hole diameter. In order not to be limited by theory, the multi-periodality in the pattern can be allowed under the effect of the porous size (mul tip le ho 1 e s i z es).

1057-6267-PF(N2).ptd 第42頁 200428682 五、發明說明（39) (multiple periodicities)而產生散射，藉此以增加圖樣之接受角度、光譜有效性（spectral effectiveness)。於此實施例中，就光引出量中之增量、用以進行相對數值計鼻的方法、以及對於具有第9圖之圖樣之發光二極體中所提高之引出效率的物理解釋等等而言，均與上述方式相同。第10圖係表示對於LED 100之數值計算資料，其包括了不同的環型圖樣（ring pattern)(複雜周期性圖樣）。圍繞於中心開孔（central hole)之第一環型（first ring)的開孔數目係不同於（6、8或1 0個）其它不同環型圖樣的開孔數目。藉由第2圖中之LED 1 0 0之所使用參數的計算下以得到了第1 0圖所示之資料，但於這些參數中並不包括了具有 4 5 0 nm之尖峰波長的射出光線。於第1 〇圖中，其數值計算係表示了每單位單體之環型圖樣數量由2至4時之LED 1〇〇的引出效率’其中，環型圖樣數量係以重覆方式通過了單體。於此實施例中，就光引出量中之增量、用以進行相對數值計异的方法、以及對於具有第丨〇圖之圖樣之發光二極體中所提高之引出效率的物理解釋等等而言，均與上述方式相同。斤第11圖係表示具有阿基米得圖樣A7iLED 1〇〇的數值什异資料。阿基米得圖樣A7係由具有相同間隔之7個開孔 (equally-spaced holes)之六角單體（hexag〇nal uint cel ls) 23 0所構成，其相互之間隔為最近相鄰距離 (NND)a。於六角單體23〇之中，其6個開孔係以正六角形1057-6267-PF (N2) .ptd Page 42 200428682 V. Description of the invention (39) (multiple periodicities) and scattering to increase the acceptance angle and spectral effectiveness of the pattern. In this embodiment, the increase in the light extraction amount, the method for calculating the relative value of the nose, and the physical explanation of the improved extraction efficiency in the light-emitting diode with the pattern of Figure 9 and so on In other words, they are the same as those described above. Figure 10 shows the numerical calculation data for the LED 100, which includes different ring patterns (complex periodic patterns). The number of openings of the first ring around the central hole is different from the number of openings of (6, 8 or 10) other different ring patterns. The data shown in Figure 10 were obtained by calculating the parameters used in LED 1 0 0 in Figure 2, but these parameters do not include the emitted light with a peak wavelength of 4 50 nm. . In Figure 10, the numerical calculation shows the extraction efficiency of LED 100 when the number of ring patterns per unit is from 2 to 4. Among them, the number of ring patterns passed the order in a repeated manner. body. In this embodiment, the physical explanation of the increase in the amount of light extraction, the method used to calculate the difference in relative values, and the extraction efficiency improved in the light-emitting diode with the pattern of Fig. 10, etc. In all respects, it is the same as above. The eleventh graph is a very different data with Archimedes pattern A7iLED 100. Archimedes pattern A7 is composed of hexagonal uint cel ls 23 with 7 equally-spaced holes at the same interval, and the distance between them is the nearest adjacent distance (NND ) a. In the hexagonal monomer 23, its 6 openings are hexagonal

第43頁 1057-6267-PF(N2).ptd 200428682 五、發明說明（40) (regular hexagon)之形狀進行排列，並且第7個開孔係位於六角型之中心位置上。隨後，將這些六角單體2 3 0以中心至中心間距（center-t〇一center spacing)為 a’ =a*(l+忑）、且沿著其邊緣相互配合的方式而共同構成了 LED的所有圖樣表面。此一方式即為所熟悉之A7貼圖（A7 t i 1 i n g )，其利用了 7開孔以構成了單體。同樣地，阿基米得貼圖（A r c h i m i d e a n t i 1 i n g) A1 9係由具有最近相鄰距離 (N N D) a、相同間隔之1 9個開孔所構成，其中，6個開孔係以内六角（i nner hexagon)的方式進行排列，1 2個開孔係以夕卜六角（outer hexagon)的方式進行排歹ij ，並且將一中心開孔設置於内六角之中。隨後，將這些六角單體2 3 0以中心至中心間距為a = a * ( 3 + )、且沿著其邊緣相互配合的方式而共同構成了 LED的所有圖樣表面。於此實施例中，就光引出量中之增量、用以進行相對數值計算的方法、以及對於具有第11圖之圖樣之發光二極體中所提高之引出效率的物理解釋等等而言，均與上述方式相同。於第 11圖中，A7、A19貼圖之引出效率約為77%，並且藉由第2 圖中之LED 1 〇〇之所使用參數的計算下以得到了第丨丨圖所示之資料’除了於這些參數中不包括了具有450 nm之尖峰波長的射出光線之外，同時這些參數亦不包括了以最近相鄰距離（NND)所定義之開孔的個別單體。第12圖係表示具有準晶圖樣之LED 1〇〇的數值計算資料。舉例而 s ，於M· Senechal，Quasicrystals andPage 43 1057-6267-PF (N2) .ptd 200428682 V. Description of the invention (40) (regular hexagon) The shape is arranged, and the seventh opening is located at the center of the hexagon. Subsequently, these hexagonal monomers 2 3 0 together form a LED with a center-to-center spacing of a ′ = a * (l + 忑) and mating with each other along their edges. All pattern surfaces. This method is the familiar A7 map (A7 t i 1 i n g), which uses 7 openings to form a single body. Similarly, the Archimide anti-ing A1 9 is composed of 19 openings with the nearest adjacent distance (NND) a and the same interval, among which 6 openings are hexagonal (i nner hexagon). One or two openings are arranged in the form of an outer hexagon 歹 ij, and a central opening is set in the inner hexagon. Subsequently, these hexagonal monomers 2 3 0 together form all the pattern surfaces of the LED in a manner that the center-to-center spacing is a = a * (3 +) and cooperate with each other along their edges. In this embodiment, in terms of the increase in light extraction amount, a method for performing relative numerical calculations, and a physical explanation of the improved extraction efficiency in a light-emitting diode having the pattern of FIG. 11, etc. Are the same as above. In Figure 11, the extraction efficiency of the A7 and A19 textures is about 77%, and the data shown in Figure 2 are obtained by calculating the parameters used for LED 1 00 in Figure 2. These parameters do not include the emitted light with a peak wavelength of 450 nm, and these parameters do not include the individual cells that have holes defined by the nearest neighbor distance (NND). Fig. 12 shows numerical calculation data of the LED 100 having a quasicrystal pattern. For example, s, in M. Senechal, Quasicrystals and

1057-6267-PF(N2).ptd 第44頁 200428682 五、發明說明（41)1057-6267-PF (N2) .ptd Page 44 200428682 V. Description of Invention (41)

Geometry (Cambridge University Press, Cambridge, E n g 1 a n d 1 9 9 6 )係揭露了相關準晶圖樣之技術，於此亦將其併入說明。於此係以數值計算說明了當8重級基準周期結構（class of 8-fold based qusi-periodic structure)之變化時之引出效率的表現。可以確信的是，由於準晶圖樣結構係可允許高度之平面内迴轉對稱性（due to high degree of in-plane rotational symmetries al lowed by such structure)，如此便可藉由準晶圖樣以呈現出相當高的引出效率。於此實施例中，就光引出量中之增置、用以進行相對數值計算的方法、以及對於具有第 1 2圖之圖樣之發光二極體中所提高之引出效率的物理解釋等等而言，均與上述方式相同。由第12圖所示之三維有限圭分時域（FDTD)法之計算資料可知，其準晶圖樣結構所達到之引出效率約為82%。藉由第2圖中之LED 1〇〇之所使用簽數的计异下以得到了第丨2圖所示之資料，除了於這些參 =1不包括了具有450 nm之尖峰波長的射出光線之外，同時這些參數亦不包括了以最近相鄰距離（NND)所定義之孔的個別單體。基於上述所提出之各種圖樣可知，凡是滿足上述所提出之基本原則（basic principles)下的圖樣均可以提高於 100之引出效率。可以確信的是，藉由增加了準晶圖、樣結構或複雜周期性圖樣之調變（detuning)下，疋可以有效地被提高。 /' 在部分實施例中，由LED 1〇〇所發出、且於光產生區Geometry (Cambridge University Press, Cambridge, E n g 1 a n d 1 9 9 6) is a technology that discloses related quasicrystal patterns, which are also incorporated herein. Here is a numerical calculation to illustrate the performance of the extraction efficiency when the class of 8-fold based qusi-periodic structure is changed. It is certain that due to the quasicrystal pattern structure, due to high degree of in-plane rotational symmetries al lowed by such structure, the quasicrystal pattern can be rendered quite High extraction efficiency. In this embodiment, the increase in the amount of light extraction, the method for performing relative numerical calculations, and the physical explanation of the improved extraction efficiency in the light-emitting diode with the pattern of Figure 12 and so on In other words, they are the same as those described above. From the calculation data of the three-dimensional finite-density time-domain (FDTD) method shown in Figure 12, it can be seen that the extraction efficiency achieved by the quasicrystal pattern structure is about 82%. Based on the calculation of the number of LEDs used in the second figure, the data shown in the second figure is obtained, except that these parameters = 1 do not include the emitted light with a peak wavelength of 450 nm. In addition, these parameters do not include individual cells of holes defined by the nearest neighbor distance (NND). Based on the various patterns proposed above, it can be known that all patterns that meet the basic principles mentioned above can improve the extraction efficiency of 100. It is certain that by adding quasicrystal, pattern structure or complex periodic pattern detuning, 疋 can be effectively improved. / 'In some embodiments, emitted by the LED 100 and in the light generating area

200428682 五、發明說明（42) 域1 30所產生之總光線強度（total amount 〇i light)的至少約為4 5 % (例如：至少約為5 0 %、至少約為5 5 %、至少約為 60%、至少約為70%、至少約為80%、至少約為90%、至少約為9 5 %)係會經由上表面1 1 〇而發出。於部分的實施例中，LED 1 0 0係可相對地具有較大的剖面積，藉此仍可經由LED 1 0 0以呈現出有效能之光引出量（light extraction)。舉例而言，於LED 1〇〇中之至少或更多的邊緣係可至少約為1公釐（m m) (m i 1 1 i m e t e r)(例如：至少約為1. 5 mm、至少約為2 mm、至少約為2 · 5 mm、至少約為3 mm)，並且由LED 100所發出、且於光產生區域 130所產生之光總量的至少約為45%(例如··至少約為50%、至少約為55%、至少約為60%、至少約為70%、至少約為 80%、至少約為90%、至少約為95%)係會經由上表面110而發出。如此一來，L E D便可相對地具有較大的剖面積（例如··至少約為1. 5 mm X 至少約為1 · 5 mm)，藉此以呈現出理想功率轉換效率（power conversion efficiency)。於部分的實施例中，具有LED 100設計之LED的引出效率於實質上係與LED的邊緣的長度無關連性。舉例而言，相較於具有LED 100之設計且其至少一或更多邊緣約為 0. 2 5 mm之LED的引出效率、具有LED 1 00之設計且其至少一或更多邊緣約為1 m m之L E D的引出效率而言，兩者之間的差別變化係約小於1 0%(例如：約小於8%、約小於5%、約小於3%)。LED之引出效率係為LED所發出的光線、發光裝置所產生之光線強度之間的比率（於此係可採用"能量200428682 V. Description of the invention (42) The total light intensity (total amount 〇i light) generated by domain 1 30 is at least about 45% (for example: at least about 50%, at least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, at least about 95%) will be emitted through the upper surface 1 10. In some embodiments, the LED 100 can have a relatively large cross-sectional area, so that the LED 100 can still pass through the LED 100 to exhibit effective light extraction. For example, at least or more of the edges in the LED 100 may be at least about 1 millimeter (mm) (mi 1 1 meter) (for example: at least about 1.5 mm, at least about 2 mm , At least about 2.5 mm, at least about 3 mm), and at least about 45% of the total amount of light emitted by the LED 100 and generated in the light generating area 130 (for example, at least about 50% (, At least about 55%, at least about 60%, at least about 70%, at least about 80%, at least about 90%, at least about 95%) will be sent through the upper surface 110. In this way, the LED can have a relatively large cross-sectional area (for example, at least about 1.5 mm X at least about 1.5 mm), thereby exhibiting ideal power conversion efficiency . In some embodiments, the extraction efficiency of an LED with the LED 100 design is substantially independent of the length of the edge of the LED. For example, compared to a design with LED 100 and at least one or more edges of which has an extraction efficiency of about 0.25 mm, a design with LED 100 and at least one or more of which has an edge of about 1 In terms of the extraction efficiency of the LED of mm, the difference between the two is less than about 10% (for example: less than about 8%, less than about 5%, and less than about 3%). The extraction efficiency of an LED is the ratio between the light emitted by the LED and the intensity of light produced by the light-emitting device.

1057-6267-PF(N2).ptd 第46頁 200428682 五、發明說明（43) (energy)”或”光子（photons)"來量測）。如此一來，LED 便可相對地具有較大的剖面積（例如：至少約為1 mm X 至少約為1 mm)，藉此以呈現出理想功率轉換效率。於部分的實施例中，具有LED 100設計之LED的量子效率（quantum efficiency)於實質上係與LED的邊緣的長度無關連性。舉例而言，相較於具有LED 1 00之設計且其至少一或更多邊緣約為0· 25 mm之LED的量子效率、具有LED 100之設計且其至少一或更多邊緣約為1 mm之LED的量子效率而言，兩者之間的差別變化係約小於1 〇%(例如：約小於 8%、約小於5%、約小於3%)。於此所提出之LED的量子效率係為：LED所產生的光子數量、於LED中所發生之孔洞再結合(electron —hole recombinations)白勺婁丈量t間白勺t匕率° 如此一來，LED便可相對地具有較大的剖面積（例如：至少約為1 mm X 至少約為1 mm)，藉此以呈現出良好的性能。於部分的實施例中，具有LED 100設計之LED的電光轉換效率（wall plug efficiency)於實質上係與LED之邊緣的長度無關。舉例而言，相較於具有L E D 1 0 0之設計且其至少一或更多邊緣約為0 · 2 5 mm之LED的電光轉換效率、具有LED 1 0 0之設計且其至少一或更多邊緣約為1 mm之LED的電光轉換效率而言，兩者之間的差別變化係約小於1 〇 % (例如··約小於8%、約小於5%、約小於3%)。於此所提出之LED 的電光轉換效率係為：LED之注入效率（注入於發光裝置中之載子數目、發光裝置之光產生區域中所再結合之載子數1057-6267-PF (N2) .ptd Page 46 200428682 V. Description of the Invention (43) (energy) or "photons". In this way, the LED can have a relatively large cross-sectional area (for example: at least about 1 mm X at least about 1 mm), thereby exhibiting ideal power conversion efficiency. In some embodiments, the quantum efficiency of an LED with the LED 100 design is substantially independent of the length of the edge of the LED. For example, compared to the quantum efficiency of an LED with a design of LED 100 and at least one or more edges of about 0.25 mm, a design with LED 100 and at least one or more edges of about 1 mm In terms of the quantum efficiency of LEDs, the difference between the two is less than about 10% (for example: less than 8%, less than 5%, and less than 3%). The quantum efficiency of the LED proposed here is: the number of photons generated by the LED, and the hole-recombinations that occur in the LED. The LED can have a relatively large cross-sectional area (for example: at least about 1 mm X at least about 1 mm), thereby exhibiting good performance. In some embodiments, the wall plug efficiency of an LED with the LED 100 design is substantially independent of the length of the edge of the LED. For example, compared to an LED with a design of LED 100 and at least one or more edges having an edge of about 0.25 mm in electro-optical conversion efficiency, a design with LED 100 and its at least one or more In terms of the electro-optical conversion efficiency of an LED with an edge of about 1 mm, the difference between the two is less than about 10% (for example, about less than 8%, less than about 5%, and less than about 3%). The electro-optical conversion efficiency of the LED proposed here is: the injection efficiency of the LED (the number of carriers injected into the light-emitting device, and the number of recombined carriers in the light-emitting area of the light-emitting device)

1057-6267-PF(N2).ptd 第47頁 200428682 五、發明說明（44) 目之兩者之間的比率）、LED之輻射效率（radiative e f f i c i e n c y )(孔洞再結合所導致之一輻射結果（r a d i a t i v e e v e n t)、孔洞再結合之總數目之兩者之間的比率）、以及 LED之引出效率（由LED所引出之光子的數目、所形成之光子的總數目之兩者之間的比率）之乘積（product) °如此~ 來，LED便玎相對地具有較大的剖面積（例如：至少約為1 mm X至少約為1 mm)’藉此以呈現出良好的性能。於部分的實施例中’由LED 1 〇 0所發出之光的角度分佈（angular distribution)係可經由上表面11 0而受到巧妙的控制。為了提高進入於一給定立體角度（given solid a n g 1 e )(例如：進入了圍繞在上表面11 0之法線方向的一立體角度）之引出效率，於此係對於可根據圖樣1 50(如上所述）進行空間上的變化之介電函數的傅立葉轉換進行檢查。第1 3圖係表示具有不同晶格常數之兩理想三角形晶格之傅立葉轉換結構（Fourier transformation construct ion)。為了提高引出效率，於此係增加了封膠光能階（encapsulant 1 ight 1 ine)中之倒晶格向量G點的數目、材料光能階（material light line)中之倒晶格向里G點的散射強度（ε g )，此一方式係暗示了藉由最近相鄰距離（NND)之增加係可達到如第6圖中所提出之效果。然而’於此係特別留意進入了立體角度之引出效率的增加 I ’此立體角度係以置中對準於上表面丨丨〇之法線方向。因此’在希望同時藉由減少封膠光能階之半徑以達到了限制倒晶格向量G.點的引入（i introduction)之下，倒晶格向1057-6267-PF (N2) .ptd Page 47 200428682 V. The ratio between the two aspects of the description of the invention (44)), the radiation efficiency of the LED (a radiation result caused by the recombination of holes) ( radiativeevent), the ratio between the total number of holes recombined), and the extraction efficiency of the LED (the ratio between the number of photons emitted by the LED and the total number of photons formed) (Product) ° In this way, the LED will have a relatively large cross-sectional area (for example: at least about 1 mm X at least about 1 mm) ', thereby exhibiting good performance. In some embodiments, the angular distribution of the light emitted by the LED 1000 can be controlled ingeniously via the upper surface 110. In order to improve the extraction efficiency of entering at a given solid angle (given solid ang 1 e) (for example: entering a solid angle around the normal direction of the upper surface 110), here is a solution for As described above, a Fourier transform of the dielectric function that varies spatially is checked. Figure 13 shows the Fourier transformation construct ion of two ideal triangular lattices with different lattice constants. In order to improve the extraction efficiency, the number of inverted lattice vector G points in the encapsulant 1 ight 1 ine and the inward lattice G in the material light line are increased. The point's scattering intensity (ε g), this method implies that the effect as proposed in Figure 6 can be achieved by increasing the nearest neighbor distance (NND). However, ′ here pays special attention to the increase in the extraction efficiency of entering the three-dimensional angle I ′ This three-dimensional angle is centered on the normal direction of the upper surface 丨丨〇. Therefore, ‘under the hope of reducing the radius of the light level of the sealant to achieve the limitation of the inverted lattice vector G. point i introduction, the inverted lattice direction

l〇57-6267-PF(N2).ptd 第48頁 200428682 五、發明說明（45) " "'-—- 量G之大小係會大於（M(ne))/c，亦即，G>( M(ne))/c。由此可去藉由減少封膠（隶低需求（b a r e m i n i m u m )係為將所有封膠均一起移除）之折射率的作用下係可得到較大的取近相鄰距離（NND)，因而增加了在材料光能階中之倒晶格向量G點的數目，並且藉由材料光能階係可造成了於$ 線方向（Fk = 0)上的引出，同時可避免於封膠之中繞射彳 (diffraction)成了較高階數（傾斜角度（〇bHque angles))。於第14圖中係表示了上述說明之趨勢、以及進入立體角度（由圖形中之集合半角（c〇Uec1：i〇n half-angle)所給定）之引出效率。藉由第2圖中之LED 100之所使用參數的計算下以得到了第 14圖所示之資料，但於這些參數中並不包括：具有53〇龍之尖峰波長的射出光線及3 4 n m的頻寬、封膠之折射率為 1 · 0、p摻雜材料層之厚度為1 6 〇 nm、光產生區域 ’ (light-generatmg layer)之厚度為3〇⑽、如第14圖所示之對於三曲線之最近相鄰距離（NND)(a)，以及以，，a!，為比例下之1 · 2 7a、0 · 7 2 a、1 · 2 7a + 4 0 nm時之深度、開孔直徑及η摻雜材料層之厚度。當晶格常數增加時，則在狹角 (narrow angles)之引出效率、進入所有角度之總引出效率便均可增加。然而，就較大晶格常數而言，即使進入所有角度之總引出效率是增加的，但在封膠之中所繞射形成之較咼階數模式係會對於狹角之引出效率造成了限制。就晶格常數為4 6 0 nm之計算結果可知，其所進入於集合半角之引出效率係大於25%。換言之，僅在大約13·4%之二體角l〇57-6267-PF (N2) .ptd Page 48 200428682 V. Description of the invention (45) " " '---- The quantity G will be greater than (M (ne)) / c, that is, G > (M (ne)) / c. Therefore, by reducing the refractive index of the sealant (the bareminimum is to remove all sealants together), the system can obtain a larger proximity to the adjacent distance (NND), thereby increasing The number of points of the inverted lattice vector G in the light energy level of the material can be obtained, and the extraction in the direction of the $ line (Fk = 0) can be caused by the material light energy level system. The diffraction becomes a higher order (oblque angles). Figure 14 shows the trends described above, as well as the efficiencies of entering the solid angle (given by the collective half angle (c0Uec1: inon half-angle) in the figure). The data shown in Figure 14 are obtained by calculating the parameters used for LED 100 in Figure 2, but these parameters do not include the emitted light with a peak wavelength of 53 ° and 3 4 nm. , The refractive index of the sealant is 1.0, the thickness of the p-doped material layer is 160 nm, and the thickness of the light-generatmg layer is 30%, as shown in FIG. 14 The closest neighbor distance (NND) (a) for the three curves, and the depth of 1 · 2 7a, 0 · 7 2 a, 1 · 2 7a + 4 0 nm in proportion to, a !, The opening diameter and the thickness of the n-doped material layer. As the lattice constant increases, the extraction efficiency at narrow angles and the total extraction efficiency at all angles can increase. However, as far as the larger lattice constant is concerned, even if the total extraction efficiency at all angles is increased, the higher order mode formed by diffraction in the sealant will limit the extraction efficiency of narrow angles. . According to the calculation result of the lattice constant of 460 nm, it can be seen that the extraction efficiency of the half-angle in the set is greater than 25%. In other words, only at the dibody angle of about 13.4%

200428682 五、發明說明（46) " -一"- 度之上半球（upper hemisphere)中之近半數的弓丨出光線是被收集的’藉此以呈現出此圖樣之準直性效鹿 (C〇llimat1〇n effect)。可以確信的是，就任何可以捭加材料光能階内之倒晶格向量G點之數目、但限制了於平3面内波向量k = 0時之封膠光能階内之倒晶格向量G點之數目的圖樣而言，藉由這些圖樣係可提高了進入於立體角度之引出效率，其中，此立體角度係以置中對準於上表面之法線方向。值的注意的是，上述方式係特別可以有效降低源音域 (source etendue)，此一源音域係通常正比於n2，其中，〇係表示周圍材料（surrounding material)(例如：封膠）之折射率。因此，藉由降低了 LED 1 〇〇中之封膠材料層之折射率的作用下，如此將會造成了更多的相互平行之9發射 (col 1 imated emission)、較少的源音域及較高的表面亮度（surf ace bright ness)(於此係將其定義為引入了來源音域之總亮度）。於部分實施例中，由空氣所形成之封膠係可減少源音域，但因而卻增加了進入於一給定集角 (collection angle)、以置中對準於上表面11〇之法線方向。於部分實施例中，當光產生區域1 3 0所產生之光線經由上表面11 0而自LED 1 0 0發出時，其光線分佈之相互平行性係比拉普拉斯分佈（lambertian distribution)為佳。舉例而言’當光產生區域1 3 0所產生之光線經由上表面1 1 〇而自LED 100發出時，由介電層（dielectric layer)表面200428682 V. Description of the invention (46) "-一 "-Nearly half of the bows in the upper hemisphere (the upper hemisphere) 丨 the light is collected ', so as to present the alignment effect of this pattern (Collimat100n effect). It is certain that for any number of points of the inverted lattice vector G within the light energy level of the material, the number of inverted lattices within the sealant light energy level when the wave vector k = 0 in the flat 3 plane is limited. For the pattern of the number of G points of the vector, the extraction efficiency of entering the solid angle can be improved by these patterns. The solid angle is centered and aligned with the normal direction of the upper surface. It is worth noting that the above method is particularly effective in reducing the source etendue. This source tone is usually proportional to n2, where 〇 is the refractive index of surrounding material (eg, sealant). . Therefore, by reducing the refractive index of the encapsulant material layer in LED 1000, this will result in more parallel col 1 imated emissions, fewer source sound ranges, and lower High surface brightness (surf ace bright ness) (here it is defined as the total brightness introduced into the source range). In some embodiments, the sealant system formed by air can reduce the source sound range, but thus increases the normal direction of entering a given collection angle and centering on the upper surface 11 . In some embodiments, when the light generated by the light generating region 130 is emitted from the LED 100 through the upper surface 110, the mutual parallelism of the light distribution is Lambian distribution. good. For example, when the light generated in the light generating region 130 is emitted from the LED 100 through the upper surface 1 10, the surface of the dielectric layer

1057-6267-PF(N2).ptd 第50頁 200428682 五、發明說明（47) 所發出之光線中，其至少約為40%(例如：至少約為50%、至少約為7 0 %、至少約為9 〇 % )係以至多約3 〇。（例如：至多約2 5 ° 、至多約2 0 ° 、至多約1 5。）的範圍内發出，而此一角度係正交於上表面U0。由此可知’就可在一指定角度（desired angle)下、相對引出高比例光線之能力，或是同時具有了相對高光線引出量之能力而言，藉此能力係可製作出具有相對高密度的L E D ’如此以提供作為一給定晶圓（g丨v e n w a f e r )之使用。舉例而a ’於每平方公分（per square centimeter) 之晶圓中係至少具有5個LEDs。此外’在相對於光產生區域丨3 〇所產生之光線的波長而吕’於部分實施例中係可針對封裝1£：]) 1 〇〇所發出之光線的波長進行修正。於第丨5圖所示之例子中，一LED 3 〇〇係具有 έ 石蘇材料層（layer containing a phosphor material)180，此含磷材料層18〇係設置於上表面11{)，藉由石外材料係可與光產生區域1 3 〇所產生之具有既定波長之光線達到父互作用，如此以產生出所需之指定波長。，4 7刀貫施例中’由封裝LED 1 〇〇所發出的光線於實質上是可以為白光（white light)的。此外，於特定之實施例中’合碟材料層180中之磷材料係可由（γ，Gd)(A1，Ga)G: (^+或釔鋁石榴石磷光體^^”㈠讨^㈣’^測^⑽，所製成。當經由光產生區域130發出之藍光（blue g )所激發時，則便可對於含磷材料層180中之磷材料進订活化1時藉由麟材料係可發出了具有寬光譜、置中1057-6267-PF (N2) .ptd Page 50 200428682 V. Description of the light emitted by (47), at least about 40% (for example: at least about 50%, at least about 70%, at least (About 90%) is up to about 30. (For example: at most about 25 °, at most about 20 °, at most about 15.), and this angle is orthogonal to the upper surface U0. It can be seen that 'the ability to relatively draw a high proportion of light at a desired angle, or the ability to draw a relatively high amount of light at the same time, by this ability can be produced with a relatively high density The LED 'is thus provided for use as a given wafer. For example, a 'has at least 5 LEDs in a wafer per square centimeter. In addition, in some embodiments, the wavelength of the light emitted from the package 1 £:]) 1 〇 can be modified relative to the wavelength of the light generated by the light generating region 丨 3 〇. In the example shown in FIG. 5, an LED 300 has a layer containing a phosphor material 180, and the phosphorus-containing material layer 18 is provided on the upper surface 11 {). The extra-stone material can interact with the light of a predetermined wavelength generated by the light generating region 130 to achieve a parent interaction, so as to generate the required specified wavelength. In the 47-blade embodiment, the light emitted by the packaged LED 100 can be substantially white light. In addition, in a specific embodiment, the 'phosphorus material in the plate material layer 180 may be selected from (γ, Gd) (A1, Ga) G: (^ + or yttrium aluminum garnet phosphor ^^ "㈠ ^^' ^ 测 ^ ⑽, produced. When excited by the blue light (blue g) emitted from the light generating region 130, the phosphorus material in the phosphorus-containing material layer 180 can be customized and activated by the Lin material system. Emits a broad spectrum, centered

1057-6267-PF(N2).ptd 第51頁 200428682 五、發明說明（48) 對準於黃光波長（y e 1 1 〇 w w a v e 1 e n g t h s )之光線（例如：等向性）。經由封裝LED 100所發出之總光譜（total light spectrum)之觀察器（viewer)係可看出黃光石鼻材料寬發射光言晋(yellow phosphor broad emission spectrum)、藍光氮化銦鎵窄發射光譜（blue InGaN narrow emission spectrum) ’此通常係為兩光错（Spectra)與感受白光 (perceive white)之混合 ° 於部分實施例中，含磷材料層1 8 0於實質上係可以均勻方式設置於上表面Π0之上。舉例而言，於圖樣15〇之頂部（top ) 1 5 1、含磷材料層1 8 0之頂部1 8 1之間的距離係可以通過上表面110且略少於20%(例如：略少於1〇%、略少於 5%、略少於2%)的方式進行變更。相較於LED 1 〇〇之表面11 〇之剖面尺寸，含填材料層 1 8 0係通常具有較小的厚度，其大小約為i麗χ工題。此外，含磷材料層180於實質上係以均勻方式沉積於表面11〇之上，於含磷材料層丨80中之磷材料於實質上係可均勻地經由表面11〇所發出之光線所泵送。在相較於LED 1〇〇之表 =110之剖面尺寸可知，由於含磷材料層丨8 〇之厚度相當的 j，由光產生區域130所發出之光線便可在LED 1〇〇之整個二=U 〇、上、，幾近均勻地的方式而在含石舞材料層1 8 ◦之中来/成了車乂低波長光線。因此，藉由相對薄且均勻之含石海材料層1 8 〇之作闲丁 4 & 之作用下如此便可經由LED 1 00發射出具有二二π之光，藉此以做為表面1 1 〇上之位置的函數。一般而言，LED 1 00係可根據不同需求而進行製作。1057-6267-PF (N2) .ptd Page 51 200428682 V. Description of the Invention (48) Lights (eg, isotropic) aligned with yellow light wavelength (y e 1 1 0 w w a v e 1 e n g t h s). The viewer of the total light spectrum emitted by the packaged LED 100 can see the yellow phosphor broad emission spectrum and the blue light indium gallium nitride narrow emission spectrum ( blue InGaN narrow emission spectrum) 'This is usually a mixture of two Spectra and perceive white light. In some embodiments, the phosphorus-containing material layer 1 80 can be arranged substantially uniformly. Above Π0. For example, the distance between the top 15 1 of the pattern 15 and the top 1 8 1 of the phosphorus-containing material layer 1 80 can pass through the upper surface 110 and be slightly less than 20% (for example: slightly less 10%, slightly less than 5%, slightly less than 2%). Compared with the cross-sectional dimension of the surface of the LED 1 100, the filler material layer 1 80 usually has a smaller thickness, and its size is about 1 mm. In addition, the phosphorus-containing material layer 180 is substantially deposited on the surface 110 in a uniform manner, and the phosphorus material in the phosphorus-containing material layer 80 is substantially pumped uniformly through the light emitted from the surface 110. give away. Compared to the cross-sectional size of the table of LED 100 = 110, it can be known that due to the thickness of the phosphorus-containing material layer 丨 800, the light emitted by the light generating area 130 can be distributed over the entire area of LED 100. = U 〇, upper, and almost uniform way to come / become a low-wavelength light in the stone-containing material layer 1 8 ◦. Therefore, with a relatively thin and uniform layer of stone-sea-containing material 1 800, it can be used as a surface 1 to emit light with 22π through LED 1 00, thereby making it a surface 1 Function of position on 10. Generally speaking, LED 100 series can be manufactured according to different needs.

200428682 五、發明說明（49) LED 100之製作通常包括了各種的沉積（deposition)、雷射製程（1 a s e r p r 〇 c e s s i n g)、微影微微影技術 (lithography)、I虫刻（etching)等步驟。請參閱第16圖，於一發光二極體晶圓（LED wafer)500 之中，LED 材料推疊層（LED layer stack of material)係沉積於一藍寶石基底（sapphire substrate)502之上，此 L E D晶圓5 0 0係可由經鎖商（c 〇 m m e r c i a 1 v e n d 〇 r )購買後直接使用。於藍寶石基底5 0 2之上係依序設置了缓衝層 (buffer layer) 5 04、一 η-摻雜矽：氮化鎵層（n-doped Si :GaN layer)506、氮化鋁鎵/氮化鎵異質接面 (AlGaN/GaN heterojunction)或超晶格（superlattcie)，其中，氮化鋁鎵/氮化鎵異質接面或超晶格係包括了一電流散佈層（current-spreading layer) 5 08、氮化銦鎵 / 氮化鎵多量子井光產生區域（InGaN/G aN multi-quantum well light-generating region)510、一 p-掺雜鎂：氮化鎵層（p-doped Mg :GaN layer)512。就一般商業上所使用之LED晶圓之直徑係約為2-3吋，並且當晶圓完成製程處理之後，藉由切割晶圓係可形成了複數個led晶粒（led dice)，這些LED晶粒係可用以製作個別的裝置。在進行晶圓之晶粒切割作業之前，藉由數個晶圓尺度製程步驟 (wafer scale processing steps)將鎂摻雜（p—摻雜）氮化錁層1 2 8定位在與光產生區域1 3 〇所在位置之同一侧，夢此以做為鏡面層（mirror layer)126。曰請參閱第17圖，一相對薄鎳層（relative；[y thin200428682 V. Description of the invention (49) The production of LED 100 usually includes various steps of deposition, laser process (1 a s er p r oc s s i n g), lithography, etching and other steps. Please refer to FIG. 16. In an LED wafer 500, an LED layer stack of material is deposited on a sapphire substrate 502. This LED The wafer 500 can be used directly after being purchased by a locker (commercia 1 vend 〇r). A buffer layer 504 is sequentially arranged on the sapphire substrate 502, an n-doped Si: GaN layer (506), aluminum gallium nitride / AlGaN / GaN heterojunction or superlattcie, wherein the AlGaN / GaN heterojunction or superlattice system includes a current-spreading layer 5 08, InGaN / GaN multi-quantum well light-generating region 510, a p-doped Mg: gallium nitride layer (p-doped Mg: GaN layer) 512. In general, the diameter of LED wafers used in business is about 2-3 inches. After the wafers are processed, a plurality of LED dice can be formed by cutting the wafers. These LEDs The die system can be used to make individual devices. Before the wafer dicing operation is performed, the magnesium-doped (p-doped) hafnium nitride layer 1 2 8 is positioned in the light-generating region 1 through several wafer scale processing steps. On the same side as the position of 30, the dream is used as a mirror layer 126. Refer to Figure 17, a relatively thin nickel layer (relative; [y thin

200428682 五、發明說明（50) n i c k e 1 1 a y e r) 5 2 0係於沉積（例如··利用電子束蒸鍍 (electron —beam evaporation))於p —換雜鎮··氮 4匕錄層 512之上，如此便可對於p-摻雜鎂：氮化鎵層51 2進行p-型歐姆式接觸（p-type ohmic contact) ° 一銀層5 22係沉積 (例如：利用電子束蒸鍍）於鎳層5 2 0之上。一相對厚鎳層 (relatively thick nickel layer) 524 係於沉積（例如·· 利用電子束蒸鍍）於銀層5 2 2之上。鎳層5 2 4係可用以做為擴散阻層（d i f i u s i ο n b a r r i e r )，如此以減少污染物 (contaminants)擴散進入銀層522之中。一金層（g〇id layer) 52 6係於沉積（例如··利用電子束蒸鍍）於鎳層524之上。I1迹後’於氮氣、虱氣、空氣或成型氣體（f〇rming gas)之中對於LED晶圓5 0 0進行了介於溫度4 〇〇- 6 0 0 °c (Celsius)之間、30與30 0秒之間的退火處理，如此以達到了歐姆式接觸。睛參閱第18圖’一載具晶圓（submount wafer)6〇〇係藉由將一銘接觸層（aluminum contact layer)604依序地沉積（例如：利用電子束蒸鍍）於p—摻雜矽晶圓（p —d〇ped silicon wafer) 6 0 2之上。一金層6 0 8係沉積於鋁接觸層 6 04之上，並且一金鍚結合層（Ausn b〇nding iayer)6i〇係沉積（例如：利用電子束蒸鍍）於金層6〇8之上。隨後，載具晶圓600係於氮氣、氫氣、空氣或成型氣體之中、以介於溫度3 5 0 -5 0 (TC之間、30與30 0秒之間進行退火處理，如此以達到了歐姆式接觸。於壓力介於〇至〇·5 MPa、溫度2 0 0-4 0 0 °C之間的作用200428682 V. Description of the invention (50) nicke 1 1 ayer) 5 2 0 is based on deposition (for example, electron beam evaporation) is used to p-change the town. In this way, a p-type ohmic contact can be performed on the p-doped magnesium: gallium nitride layer 51 2 ° A silver layer 5 22 system is deposited (eg, using electron beam evaporation) on Nickel layer 5 2 0. A relatively thick nickel layer 524 is deposited (eg, by electron beam evaporation) on the silver layer 5 2 2. The nickel layer 5 2 4 can be used as a diffusion resistance layer (d i f i u s i ο n b a r i e r), so as to reduce the diffusion of contaminants into the silver layer 522. A gold layer 52 6 is deposited (for example, by electron beam evaporation) on the nickel layer 524. After the I1 trace, the LED wafer was subjected to a temperature between 4,000-600 ° C (Celsius), 30 ° C in nitrogen, lice gas, air, or forming gas. And 300 seconds of annealing, so as to achieve ohmic contact. Please refer to FIG. 18 'A submount wafer 600 is formed by sequentially depositing an aluminum contact layer 604 (eg, electron beam evaporation) on p-doping Silicon wafer (p — doped silicon wafer) 602. A gold layer 608 is deposited on the aluminum contact layer 604, and an Au-bonding iayer 6i〇 system is deposited (for example, using electron beam evaporation) on the gold layer 608. on. Subsequently, the carrier wafer 600 is annealed in nitrogen, hydrogen, air, or molding gas at a temperature between 350-50 (TC, 30 and 300 seconds), so as to achieve Ohmic contact: for pressure between 0 and 0.5 MPa, temperature between 2 0-4 0 0 ° C

200428682 五、發明說明（51) 下’藉由將LED晶圓5 0 0之金層5 2 6接觸於載具晶圓6 0 0之金錫結合層6 1 0時，如此便可達到LED晶圓5 0 0、載具晶圓6 0 0 之間的結合（例如：利用熱壓機械（t h e r m a 1 - m e c h a n i c a 1 press))。氮化銦鎵/氮化鎵多量子井光產生區域51〇、金起結合層6 1 0係形成了共晶結合（e u t e c t i c b ο n d )。隨後，對方；相互結合之晶圓夾層（wafer sandwich)進行冷卻，並且將熱壓機（press)之上的相互結合之夾層（sandwich)進行移除。在完成了結合作業之後，藍寶石基底502便可藉由雷射掀去製程（laser liftoff process)而自相互結合之晶圓結構進行移除。舉例而言，美國專利第6，4 2 0，2 4 2、 6, 0 71，795案中係揭露了相關雷射掀去製程之技術，於此係將此兩案參照併入於本案之中。於部分實施例中，一 2 48 nm之雷射光束係以照射通過了藍寶石基底5〇2、且接近於η-摻雜矽：氮化鎵層5〇6與藍寶石基底5〇2之介面的方式而對於η-摻雜矽：氮化鎵層5 〇 6進行局部加熱，藉此以對於η摻雜石夕：氮化鎵層506之子層（sublayer) 進行解離（decomposing)處理。隨後，將晶圓夾層加熱至起過了！豕（gallium)之炼點（melting point)之上的溫度，此便可藉由一橫向力（lateral f〇rce)將藍寶石基底自晶圓夾層之中進行移除（例如：採用棉花棒（c〇tt〇n swab))。隨後，對於外露的GaN表面進行清潔處理（例如：採用氫氯酸浴（hydrochloric acid bath))，藉此方式以移除表面之液態鎵（liqui(i galHum)。通常，當氮化鎵磊200428682 V. Description of the invention (51) When the gold layer 5 2 6 of the LED wafer 500 is brought into contact with the gold-tin bonding layer 6 10 of the carrier wafer 600, the LED crystal can be achieved in this way. The combination between circle 5 0 and carrier wafer 6 0 0 (for example: using thermo 1 machinery (therma 1-mechanica 1 press)). An eutectic bond (e u t e c t i c b ο n d) is formed in the indium gallium nitride / gallium nitride multi-quantum well light generation region 51 and the gold bonding layer 610. Subsequently, the opposite party; the wafer sandwich sandwiched with each other was cooled, and the sandwich sandwich sandwiched on the press was removed. After the bonding operation is completed, the sapphire substrate 502 can be removed from the bonded wafer structure by a laser liftoff process. For example, U.S. Patent Nos. 6, 4 2 0, 2 4 2, 6, 0 71, 795 disclosed the technology of the related laser lift-off process, and hereby refer to these two cases and incorporate them into this case. in. In some embodiments, a laser beam of 2 48 nm passes through the sapphire substrate 502 and is close to the interface between the η-doped silicon: gallium nitride layer 506 and the sapphire substrate 502. In this way, the η-doped silicon: gallium nitride layer 506 is locally heated to decompose the η-doped silicon: gallium nitride layer 506 sublayer. After that, the wafer sandwich is heated until it has passed! The temperature above the melting point of gallium, so that the sapphire substrate can be removed from the wafer sandwich by a lateral force (for example: using a cotton swab (c 〇tt〇n swab)). Subsequently, the exposed GaN surface is cleaned (for example, using a hydrochloric acid bath) to remove the liquid gallium (liqui (i galHum)) on the surface. Generally, when gallium nitride is used,

1057-6267-PF(N2).ptd 第55頁 200428682 五、發明說明（52) 晶推疊層（GaN epitaxial layer stack)之上的藍寶石基底5 0 2被移除之後’存在於氮化蘇蠢晶推疊層之中的應力 (s t ra i η )(例如：由於藍寶石基底5 〇 2與氮化鎵磊晶推疊層之間的晶格差異（1 at t i ce m i sma t ch))係可同時被移除。此外，由於結合至藍寶石基底5 0 2之氮化鎵磊晶推疊層係可能持續形成了翹*曲或彎曲，在上述方式作用下係可使得氮化鎵磊晶推疊層自翹曲或彎曲而達到鬆馳的效果，並且可假設在η -摻雜矽：氮化鎵層5 0 6之外露表面上具有相對平坦形狀（relatively flat shape)。當藉由載具 (submount) 120以防止在雷射掀去製程中產生裂痕時，則熱膨脹係數（coefficient of thermal expansion)係必須加以考量。此外，在步驟中進行電磁場之實質重疊、重覆製程的作用下，於雷射掀去製程中之裂痕的數量係可被減少〇請參閱第1 9圖，藉由對於η -摻雜矽：氮化鎵層5 〇 6之外露表面進行蝕刻作用下，其所形成之具有既定厚度 (desired thickness)之層結構係可用提供做為最終裝置 (f inal deviceK第20圖）之使用。在蝕刻作業之後，於n — 摻雜石夕：氮化鎵層5 0 6之表面上便可在姓刻作用下形成了粗糙的表面結構（roughened surface texture) 70 0。粗糙的表面結構70 0係可經由平坦化、薄型化處理（pianarized and thinned)(例如：採用化學機械製程 (chemical-mechanical process))，如此便可使得η -摻雜矽：氮化鎵層5 0 6達到了一最終厚度（finai thickness)，1057-6267-PF (N2) .ptd Page 55 200428682 V. Description of the invention (52) The sapphire substrate 5 0 2 on the GaN epitaxial layer stack was removed, 'is present in the nitride nitride The stress (st ra i η) in the crystal push stack (for example: due to the lattice difference between the sapphire substrate 5 0 2 and the gallium nitride epitaxial stack) (1 at ti ce mi sma t ch) system Can be removed at the same time. In addition, since the gallium nitride epitaxial stacking system bonded to the sapphire substrate 502 may continue to form warpage or warping, the system can make the gallium nitride epitaxial stacking self-warping or bending Bending to achieve a relaxing effect, and it can be assumed that the exposed surface of the n-doped silicon: gallium nitride layer 506 has a relatively flat shape. When the submount 120 is used to prevent cracks during the laser lift-off process, the coefficient of thermal expansion must be considered. In addition, the number of cracks in the laser lift-off process can be reduced by the substantial overlapping and repeated processes of the electromagnetic fields in the step. Please refer to Figure 19, for η-doped silicon: After the exposed surface of the gallium nitride layer 50 is etched, the layer structure formed with a desired thickness can be provided as a final device (final deviceK FIG. 20). After the etching operation, a roughened surface texture 70 0 can be formed on the surface of n-doped Shi Xi: GaN layer 506 under the action of the last name. The rough surface structure 70 0 can be subjected to pianarized and thinned (eg, chemical-mechanical process), so that η-doped silicon: gallium nitride layer 5 0 6 has reached a final thickness,

1057-6267-PF(N2).ptd1057-6267-PF (N2) .ptd

第56頁 200428682 五、發明說明（53) 並且可以使得粗糖的表面結構7 〇〇之表面粗糙度（s u r f a c e smoothness)之均方根（ro〇t mean square，rms)小於5 nm °另外’一非平坦化介面（non —pianair interface)係可以局部方式引入於LED 1 00之中，藉此方式作用下便可經由粗糙的表面結構7〇〇以提高LED 1 00之引出效率。相較於顯微化之光滑表面之下，當光射線（1 ight ray )以數次 (multiple times)方式撞擊於表面結構7〇〇之時，其最終會以小於Snell s定律之臨界角（critical angle)的角度撞擊在表面結構7 〇〇之上，而粗糙的表面結構7 〇〇係可大幅度地增加了此種情況發生的可能性。在70成了钱刻程序之後，便可在n —摻雜石夕：氮化鎵層 506之中進行一介電函數圖樣（dielectric functi〇n p a 11 e r η )之製作。首先，將一材料（例如：聚合物 (polymer))之平坦化層（pianarizati〇n iayer) 了〇2 設置於 (例如.採用旋轉塗佈（spin —coating))n—摻雜矽：氮化鎵層506之上’並且將一阻層（resist iayer)7〇4設置於（例如·鉍轉塗佈）平坦化層7 〇 2之上。隨後，藉由一奈米刻印蝕刻（nano imprint lith〇graphy)及蝕刻製程的方式便可將用以形成LED之中的光晶格（ph〇t〇nic iatuce)之一圖樣建立於η-摻雜矽：氮化鎵層5〇6之中。首先，用以定義出所需圖樣之部分係被壓印在阻層7 〇 4之中，並且以階段 f生方式璲步地（port i〇n —by-p〇rti〇n)形成在晶圓的所有表面之上士除了可以印出圖樣1 5 0之各種特徵之外，同時提 i、了後；衣作過程中之n接觸墊（n_c〇ntact)之沈積用之區 200428682Page 56 200428682 V. Description of the invention (53) It can make the surface smoothness (root mean square, rms) of the surface structure of the crude sugar 7 〇 less than 5 nm ° A flat interface (non-pianair interface) can be introduced into the LED 100 in a localized manner. In this way, the rough surface structure 700 can be used to improve the extraction efficiency of the LED 100. Compared with the microscopic smooth surface, when the light ray (1 ight ray) hits the surface structure 700 in multiple times, it will eventually be smaller than the critical angle of Snell s law ( Critical angle) impinges on the surface structure 700, and the rough surface structure 700 can greatly increase the possibility of this situation. After 70 has become the money-engraving process, a dielectric function pattern (dielectric functión p a 11 e r η) can be produced in the n-doped lithography: gallium nitride layer 506. First, a material (eg, a polymer) planarization layer (pianarization iayer) is placed on (eg, spin-coating) n-doped silicon: nitride On top of the gallium layer 506 'and a resist iayer 704 is provided (eg, bismuth transfer coating) on the planarization layer 702. Subsequently, by means of nano imprint lithography and etching processes, one of the patterns used to form the photonic lattice in the LED can be established on the η-doped substrate. Miscellaneous silicon: GaN layer 506. First, the part used to define the required pattern is imprinted in the resist layer 700, and is formed in a step-by-step manner (port i〇n—by-p〇rti〇n) on the crystal On all surfaces of the circle, in addition to the various features of the pattern 150 can be printed at the same time, i, after; at the same time, the area for the deposition of n contact pads (n_c〇ntact) during the dressing process 200428682

域。於上述製作過程中 a .Λ ^ _ η — #雜石夕：氮化鎵層5 0 6之表面於貫質上係呈現平扭妝盔技伽 ,.—狀為佳。舉例而言，X光微影（X-ray U^graPhy)或深紫外光微影（deep ultraviolet i^h〇graphy)亦可用以在阻層7〇4之中建立出相關的圖 '。當阻層形成於晶圓之上、且於晶圓的阻層之上建立了關圖樣^後，一預沉積蝕刻光罩（predeposited etch mask便可5又置於n-摻雜矽：氮化嫁層的表面之上。一在藉由阻層7 0 4做為一光罩之作用下，另一圖樣係可猎由阻層704而傳送至平坦化層7〇2之中（例如：活性離子蝕刻製程（reactlve-10n etching pr〇cess))。隨後，藉由平坦化層7 0 2做為一光罩，利用平坦化層7 〇 2將圖樣傳送至η—摻雜矽：氮化鎵層5〇6之中，並且在完成了^摻雜石夕·氮化鎵層5 0 6的蝕刻製作之後，便可進行平坦化層7 〇 2 之私除作業（例如.氧基活性離子姓刻（〇 χ y g e n _ b a s e己 reactive-ion etching)) 〇當圖樣被轉移至n-摻雜矽：氮化鎵層5〇6之後，含磷材料層便以可選擇方式設置於（例如：採用旋轉塗佈）n一摻雜石夕：氮化鎵層5 0 6之圖樣表面之上。於部分實施例中，读係可以相當一致性的方式塗覆於圖樣表面（沿著圖樣表面中之開孔的底部、侧壁上的塗覆層係實質上並不存在有空孔（v 〇 i d s ))之上。另一方面，封膠材料層係可被設置於 η -摻雜矽：氮化鎵層5 〇 6之表面上（例如：藉由化學氣相沉積（CVD)、濺鍍（sputtering)、以隨後之蒸鍍方式所形成之液態黏結劑（1 i q u i d b i n d e r)進行懸浮（s u s p e n s i ο η))。area. In the above manufacturing process, a .Λ ^ _ — — # 杂石夕: The surface of the gallium nitride layer 506 shows a flat twist makeup helmet technique on the substrate. The shape is better. For example, X-ray lithography (X-ray U ^ graPhy) or deep ultraviolet lithography (deep ultraviolet i ^ hography) can also be used to create a relevant image in the resist layer 704 '. When a resist layer is formed on the wafer and a pattern is established on the resist layer of the wafer ^, a predeposited etch mask can be placed on the n-doped silicon: nitride Above the surface of the grafting layer. One can use the resist layer 704 as a photomask, and the other pattern can be transferred from the resist layer 704 to the planarization layer 702 (for example: active Ion-etching process (reactlve-10n etching pr〇cess)). Subsequently, the planarization layer 70 2 is used as a photomask, and the pattern is transferred to the η-doped silicon: gallium nitride using the planarization layer 70 Layer 506, and after the etch of the doped shixi · gallium nitride layer 506 is completed, the removal operation of the planarization layer 702 can be performed (for example, the active oxygen ion surname (〇χ ygen _ base has been reactive-ion etching)) 〇 After the pattern is transferred to the n-doped silicon: gallium nitride layer 506, the phosphorus-containing material layer is optionally set in (for example: using Spin coating) n-doped stone: on the pattern surface of the GaN layer 506. In some embodiments, the reading system can be quite consistent Coating on the pattern surface (the coating layer along the bottom of the opening in the pattern surface and the side wall does not substantially have voids (v oids)). On the other hand, the sealing material The layer system may be provided on the surface of the η-doped silicon: gallium nitride layer 506 (for example, formed by chemical vapor deposition (CVD), sputtering, and subsequent evaporation) Liquid binder (1 iquidbinder) was suspended (suspensi ο η)).

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於部分實施例中，封膠材料係料。於部分實施例中，經壓縮後二:〇 ^種璘材，=thlckness uniformity)之值係約小於填材料之二厚度（average thlcknessn〇2〇%、15%、ι〇%、㈣或以。= 部分實施例中，含碟之封膠材料層係可均勾地塗覆 ^ 表面之上。 U ¥ 當介電函數圖樣已經被建立在卜摻雜矽··氮化鎵層 5 0 6之中時，則便可自晶圓開始進行個別之LED晶粒的切割。當完成了晶圓製程（wafer processing)與晶圓測試 Uafer testing)之後，個別的LED晶粒便可進行分離; 業’隨後並進行個別LED晶粒之封裝與測試。此外，於晶圓之切割作業之中’對於圖樣化L E D之電及/或光性質之可能潛在之損壞係可藉由側壁鈍化步驟（s i de wa 1 1 passivation step)及/或預分離深斜角蝕刻步驟 (pre-separated deep mesa etching step)以有效降低。個別LED晶粒之大小係可根據晶圓之尺寸而決定，位一 LED晶粒之形狀係採用了正方形或矩形，同時其邊長係介於0· 5 mm-5 mm。標準光微影（standard photol i thography)係用以定義出晶圓上之晶粒位置，藉由所製作之晶粒以對於製作發光裝置進行激發，並且藉3由蒸鍍（例如：利用電子束蒸鍍）方式於指定位置上形成^歐姆式接觸。若LED晶粒係已完成了封裝作業、且對於LED晶粒進行機械、壞境之相關防護措施之後，措此封裝方式係可加速In some embodiments, the sealant material is a material. In some embodiments, after compression, the value of the two: 璘 ^ 璘璘, = thlckness uniformity) is about less than the average thickness of the filling material (average thlcknessn = 20%, 15%, ι0%, ㈣ or less). = In some embodiments, the sealant material layer containing the dish can be evenly coated on the surface. U ¥ When the dielectric function pattern has been established on the doped silicon · gallium nitride layer 5 0 6 In the middle time, individual LED dies can be cut from the wafer. When the wafer processing and wafer testing are completed, the individual LED dies can be separated; Subsequently, packaging and testing of individual LED dies are performed. In addition, during wafer slicing operations, 'possible potential damage to the electrical and / or optical properties of the patterned LEDs may be through a side passivation step (si de wa 1 1 passivation step) and / or pre-separation deep oblique The corner etching step (pre-separated deep mesa etching step) is effectively reduced. The size of individual LED dies can be determined according to the size of the wafer. The shape of a bit of LED dies is square or rectangular, and the side length is between 0.5 mm and 5 mm. Standard photolithography is used to define the position of the crystal grains on the wafer. The produced crystal grains are used to excite the light-emitting device, and the evaporation is performed by 3 (for example, using an electron beam) (Evaporation) method to form a ^ ohmic contact at a specified position. If the LED die has been packaged, and the LED die is mechanically and environmentally protected, the packaging method can be accelerated.

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，接收的能力。舉例而言，當不採用封膠時，藉由一透明蓋板（transparent cover)覆蓋於LED晶粒之上，如此便可以對於η-摻雜矽：氮化鎵層5〇6之表面圖樣進行保護。蓋玻片140係藉由全熔或半熔之玻璃粉料（gUssy fri 而貼附於支承構件142之上，此玻璃粉料係於熔爐（furnace)2 中進行熔化作業。舉例而言，於複數支承構件丨42之相對的端部之間係藉由邊蓋焊接（cap weld)或環氧樹脂而達到相互的連接。一般而言，支承構件丨4 2係具有鍍鎳 (Ni-plated)層，藉此以加速其焊接至封裝之鍍金表面 plated surf ace)之上。可以確信的是，在LED 1〇〇之封裝層的作用下’其係可以在單位面積下容許較高電力負載 (tolerable power loads)。此外，對於標準leds 而言，通常係將封裝層之劣化（degradat i on)視為破壞機制 (failure mechanism)，如此便可避免封裝層之使用。由於LEDs係經由大面積之平坦化晶圓所進行切割而得’其每單位之光輸出（light 〇utput)並不會隨著面積而降低。此外，由於晶圓所切割之個別LEDs的斷面係僅略大於 LED 之發光表面積（light-emitting surface area)，這些個別且分離之可定址LEDs係可採用陣列（array)方式進行緊密的封裝。再者，若在複數LEDs中之一者失效（例如··由於大型缺陷（large defect))，但由於個別發光裝置之間係以相當緊密的陣列方式進行排列，其效能將不會受到明顯的影響。 ^ " 由此可知，於上述實施例中所提出之特徵係同樣可以, The ability to receive. For example, when no sealant is used, a transparent cover is used to cover the LED die, so that the surface pattern of the η-doped silicon: gallium nitride layer 506 can be performed. protection. The cover glass 140 is attached to the supporting member 142 by a fully-melted or semi-melted glass frit (gUssy fri), and the glass frit is melted in a furnace 2. For example, in The opposite ends of the plurality of support members 42 are connected to each other by cap welding or epoxy resin. Generally, the support members 4 and 2 are nickel-plated. Layer to accelerate its soldering onto the package's gold-plated surface (plated surf ace). It is believed that under the effect of the packaging layer of LED 100, it can tolerate higher power loads per unit area. In addition, for standard LEDs, the degradation of the encapsulation layer is usually regarded as a failure mechanism, so the use of the encapsulation layer can be avoided. Since LEDs are cut through a large-area planarized wafer, the light output per unit (light output) does not decrease with area. In addition, since the cross-sections of individual LEDs cut by the wafer are only slightly larger than the light-emitting surface area of the LEDs, these individual and separated addressable LEDs can be tightly packed using an array method. Furthermore, if one of the plurality of LEDs fails (for example, due to a large defect), but the individual light-emitting devices are arranged in a relatively tight array, their efficiency will not be significantly affected. influences. ^ " From this, it can be seen that the features proposed in the above embodiments are equally applicable.

200428682 五、發明說明（57) 在其它實施例中呈現。舉例而言，雖然於上述發揭露了特定的厚度，然A t及”相關層結構之中其相關層結構亦可採用其限制，發光裝置及言，發光裝置係可採用度值來進行成型。-般而之中的個別層結構亦可採用任且所指定選用之多重推疊層122中= ’在 I 4(tptuat ! i4lr ^ ^ ^(〇PtlCal m〇^es) ^ ^ ^ 特定層結構Λ度部了分實施日例中，發光裝置中之 Miu ^ ^ r又已括了 .矽晶摻雜（Π-摻雜）氮化鎵層1 尽度係可至少約為100 ηιη(例如··至少約A2〇〇 -、至少約為3〇〇nm、至少約為4〇〇nm、至少二〇 nm)及至多約為10微米（mi crons)(例如··至多約為5微米、至夕約為3微米、至多約為丨微米）。於部分實施例中，鎂摻雜（p—摻雜）氮化鎵層1 2 8之厚度係可至少約為1 〇 n m (例士，至少約為2 5 n m '至少約為4 0 n m)及/或至多約為1微^米（例如：至多約為5 0 0 nm、至多約為1〇〇 nm)。於部分貫施例中，銀層1 26之厚度係可至少約為1 〇 nm(例如·至少約為5 〇 nm、至少約為1 〇〇 nm )及/或至多約為1微来（例如：至多約為5 〇〇 ηπ]、至多約為2 5 0 nm)。於部分實施例中’光產生區域丨3〇之厚度係可至少約為1〇 nm(例如：至少約為25 nm、至少約為50 nm、至少約為100 nm) 及/或至多約為5 0 0 n m (例如··至多約為2 5 0 n m、至多約為200428682 V. Description of the Invention (57) Presented in other embodiments. For example, although the specific thickness is disclosed in the above-mentioned publications, among the related layer structures of At and related layers, their limitations can also be adopted. Light-emitting devices, in other words, light-emitting devices can be molded using degrees. -In general, the individual layer structure can also be used in any and specified multiple push stacks 122 = 'In I 4 (tptuat! I4lr ^ ^ ^ (〇PtlCal m〇 ^ es) ^ ^ ^ specific layer structure In the implementation example, Miu ^ ^ r in the light-emitting device has been included. The silicon doped (Π-doped) gallium nitride layer 1 may be at least about 100 ηιη (for example, · At least about 2,000-, at least about 300 nm, at least about 400 nm, at least 20 nm) and at most about 10 micrometers (for example, at most about 5 microns, to (Approximately 3 microns, at most about 丨 microns). In some embodiments, the thickness of the magnesium-doped (p-doped) gallium nitride layer 1 28 may be at least about 10 nm (for example, at least About 25 nm (at least about 40 nm) and / or at most about 1 micrometer (for example: at most about 500 nm, at most about 100 nm). In some embodiments The thickness of the silver layer 126 may be at least about 10 nm (for example, at least about 50 nm, at least about 100 nm) and / or at most about 1 micron (for example, at most about 5 〇〇ηπ], at most about 250 nm). In some embodiments, the thickness of the 'light-generating region 3' may be at least about 10 nm (for example: at least about 25 nm, at least about 50 nm , At least about 100 nm) and / or at most about 500 nm (e.g., at most about 250 nm, at most about

1057-6267-PF(N2).ptd 第61頁 200428682 五、發明說明（58) "一"' '一~— 1 〇〇 ηπι)。 “一由其它例子可知，雖然於上述說明中揭露了相關於發光一極體（Hght-emitting diodes)之各項特徵，然其並非用以做為限制，其它的發光二極體亦可具有相同的特徵’類似的裝置包括了雷射及光學放大器（laser and 〇ρΐ i ca 丨 amp 1 i f i ers )。、由其它例子可知，上述所提出之氮化鋁鎵層丨3 2係可做為矽晶摻雜（η-摻雜）氮化鎵層134之一分離層（separate 1 ayer);於部分實施例中，電流散佈層係可一體成型於矽晶摻雜（η-摻雜）氮化鎵層134之上。於部分實施例中，電流散佈層係可為相對於相鄰層之間、相對高之矽晶摻雜 (η-摻雜）氮化鎵層134或異質接面，藉此以形成二維電子氣體（2D electron gas)。如另一例子可知，雖然於上述說明中揭露了相關於半導體材料之使用，然其並非用以做為限制，其它的半導體材料亦可應用在各實施例之中。一般而言，任何半導體材料（例如·苐III—V族半導體材料（ill—v semiconductor materials)、有機半導體材料（organic semiconductor materials)、矽（siiic〇n))係可應用在發光裝置之中，其匕的光產生材料（light -generating material)包括了：麵鎵坤磷（InGaAsP)、鋁銦氮化鎵（A1InGaN)、銘鎵砷 (AlGaAs)、銦鎵氮化鋁（InGaAlp)。有機發光材料 (organic light-emitting materials)包括了三—8—羥基奎琳化紹（電子轉移材料（Alq3))(aluminum1057-6267-PF (N2) .ptd Page 61 200428682 V. Description of the Invention (58) " 一 " '' 一 ~ — 1 〇〇 ηπι). "As can be seen from other examples, although the features related to Hght-emitting diodes are disclosed in the above description, it is not intended to be a limitation, and other light-emitting diodes may also have the same Features' Similar devices include laser and optical amplifiers (laser and 〇ρΐ i ca 丨 amp 1 ifi ers). From other examples, it can be known that the above-mentioned aluminum gallium nitride layer 丨 3 2 series can be used as silicon A doped (a-doped) gallium nitride layer 134 is a separate layer; in some embodiments, the current spreading layer may be integrally formed on the silicon doped (n-doped) nitride. The gallium layer 134. In some embodiments, the current spreading layer may be a relatively high silicon-doped (η-doped) gallium nitride layer 134 or a heterojunction with respect to adjacent layers. This forms a two-dimensional electron gas. As another example shows, although the use of semiconductor materials is disclosed in the above description, it is not intended as a limitation, and other semiconductor materials can also be used in Among the embodiments, in general, any Conductive materials (for example, 苐 III-V semiconductor materials, organic semiconductor materials, silicon) can be used in light-emitting devices, and the light produced by the daggers The light-generating materials include: InGaAsP, A1InGaN, AlGaAs, InGaAlp. Organic light-emitting materials emitting materials) including tris-8-hydroxyquineline (Alq3)) (aluminum

1057-6267-PF(N2).ptd 第62頁 200428682 五、發明說明（59) tris-8-hydr〇xyquin〇line(Alq3))之小分子、聚[2-甲氧基-5-(2-乙基己氧基）-1， 4 -對位苯乙二烯] 【P〇iy[2-methoxy-5-（2-ethylhexyl〇xy)-l， 4-vinylenephenylene]】或對苯乙快（MEH-PPV)之共輛聚合物(conjugated polymers) ° 又如另一例子可知，雖然於上述說明中揭露了具有大面積之LEDs，然其並非用以做為限制，小面積LEDs亦同樣可達到相同的特徵（例如：LEDs之邊緣係以3 0 0微米小於標準值（standard))。又如另一例子可知，雖然於上述說明中揭露了介電函數係可根據具有孔洞之圖樣而進行空間改變，然其並非用以做為限制，圖樣亦可採用其它樣式來達成，例如：於適當的層結構中，圖樣係可採用連續脈紋（veins)及/或不連續脈紋的方式來形成。另外，在不採用孔洞或脈紋之情況下亦可對於介電函數進行改變。例如：具有不同介電函數之材料係可被圖樣化於一適當層結構之中。此外，藉由將此類型圖樣進行組合（c 〇 m b i n a t i ο n s )下亦可達到介電函數的改變。又如另一例子可知，雖然於上述說明中揭露了利用銀來形成層結構1 2 6，然其並非用以做為限制，層結構丨2 6亦同樣可採用其它材料來形成。於部分實施例中，層結構 126係由可反射光線之材料所製成，藉由此一層結構係對於光產生區域所產生之5〇%的光線進行反射，隨後被反射之光線係衝擊在一反射材料層（a 1 a y e r 〇 f a1057-6267-PF (N2) .ptd Page 62 200428682 V. Description of the invention (59) tris-8-hydrOxyquinOline (Alq3)) small molecule, poly [2-methoxy-5- (2 -Ethylhexyloxy) -1, 4 -p-phenylene diene] [Poii [2-methoxy-5- (2-ethylhexyloxy) -1, 4-vinylenephenylene]] or p-phenylene (MEH-PPV) conjugated polymers ° According to another example, although LEDs with large areas are disclosed in the above description, they are not used as a limitation, and small-area LEDs are equally applicable. To achieve the same characteristics (for example: the edge of the LEDs is less than the standard value of 300 microns). As another example, although it is disclosed in the above description that the dielectric function system can be changed spatially according to the pattern with holes, it is not used as a limitation, and the pattern can also be achieved by other patterns, such as: In an appropriate layer structure, the pattern system can be formed by continuous veins and / or discontinuous veins. In addition, the dielectric function can be changed without using holes or veins. For example, materials with different dielectric functions can be patterned into an appropriate layer structure. In addition, by combining this type of pattern (c 0 m b i n a t i ο n s), the change of the dielectric function can also be achieved. As another example, although it is disclosed in the above description that the layer structure 1 2 6 is formed by using silver, it is not used as a limitation, and the layer structure 丨 2 6 can also be formed by using other materials. In some embodiments, the layer structure 126 is made of a material capable of reflecting light, so that one layer structure reflects 50% of the light generated in the light generating area, and then the reflected light impinges on a Reflective material layer (a 1 ayer 〇fa

1057-6267-PF(N2).Ptd 第63頁 200428682 五、發明說明（60) reflective material)之上，其中，反射材料層係位於支承構件與一多重材料推疊層（multl —layer stack mater lal)之間。此類型之材料包括：布拉格反射鏡疊層 (distributed Bragg reflector stacks)、各種金屬與合金，例如：銘、含铭合金。又如另一例子可知，載具1 2 〇係可由各種材料所製成’這些材料包括了銅（C0pper)、銅鎢 (copper-tungsten)、氮化銘（aiuminuin nitride)、碳化石夕（silicon carbide)、氧化鈹（beryllium-oxide)、鑽石 (diamonds) 、 TEC 、鋁。又如另一例子可知，雖然於上述說明中之層結構1 2 6 係以散熱材料所製成，但於其它實施例中之發光裝置係可由包括了分離層（例如：設置於層結構126、載具12〇之間）之材料所製成，藉此以做為一散熱器。值得注意的疋’此貝施例中之層結構1 2 6係可或不必經由散熱器用之材料所製成。又如另一例子可知，除了上述說明中所提出之利用整们光產生區域的方式以改變介電函數中的圖樣之外，僅藉由延伸至矽晶摻雜（n—摻雜）氮化鎵層丨3 4之中的方式以改 k介電函數中的圖樣（於實質上係具有降低表面再結合載子損失（surface recombination carrier losses)之可月匕）:於部分貫施例中，藉由延伸超過了矽晶摻雜（n-摻雜）乳化鎵層1 34的方式亦可改變介電函數中的圖樣（例如··延伸進入氮化鋁鎵層132、光產生區域13〇及/或鎂摻1057-6267-PF (N2) .Ptd Page 63 200428682 V. Description of the invention (60) reflective material), wherein the reflective material layer is located on the support member and a multi-material push stack (multl —layer stack mater) lal). This type of material includes: distributed Bragg reflector stacks, various metals and alloys, such as: inscriptions, alloys with inscriptions. As another example, it can be seen that the carrier 120 series can be made of various materials. These materials include copper, copper-tungsten, aiuminuin nitride, and silicon carbide. carbide), beryllium-oxide, diamonds, TEC, aluminum. As another example, it can be seen that although the layer structure 1 2 6 in the above description is made of a heat dissipating material, the light emitting device in other embodiments may include a separation layer (for example, provided in the layer structure 126, Carriers (between 120 and 20) are used as a heat sink. It is worth noting that the layer structure 1 2 6 in this example is made of a material that may or may not have to be passed through the heat sink. As another example, it can be seen that, in addition to the way in which the entire light-generating region is proposed to change the pattern in the dielectric function, only by extending the silicon doped (n-doped) nitride The method in the gallium layer 丨 3 4 is to change the pattern in the k dielectric function (in essence, it can reduce the surface recombination carrier losses): In some embodiments, The pattern in the dielectric function can also be changed by extending beyond the silicon doped (n-doped) emulsified gallium layer 1 34 (for example, · extending into the aluminum gallium nitride layer 132, the light generating region 13 and / Or magnesium

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五、發明說明（61) 雜（P-摻雜）氮化鎵層128) 又如另一例子可知，雖然於上述實施例中提出了可將空氣設置於上表面11 〇、蓋玻片1 4 0之間，於其它實施例中係可將其它材料及/或空氣設置於上表面110、蓋玻片之間。一般而言，此類型之材料之折射率係必須至少約為 1、至少約小於1 · 5(例如：至少約小於1 · 4、至少約小於/、 3、至少約小於1. 2、至少約小於1 · 1 )，其材質係包括了; (nitrogen)、空氣，或是其它具高導熱性（therma；i 氣 conductivity)之氣體。於此實施例中，上表面11()係可不必被圖樣化處理，例如：上表面1丨〇係可為粗糙化處^ 之非圖樣（non-patterned)表面（例如··可為具有任意分佈、各式尺寸及形狀之外貌，其波長係小於λ / 5 )。於部分實施例中’發光裝置係可包括了磷材料層 (layer 〇f a phosphor material layer)，此磷材 ^層係塗覆於上表面110、蓋玻片140及支承構件142之上。於部分實施例中，發光裝置中之蓋玻片14〇之中係可設置有磷材料，其上表面110係可或不必被圖樣化處理。於另一種實施方式中，由光產生區域130所發出之光線係可為肝（或紫（vl〇iet)或藍（blue))，並且於含填材料層18〇之中係包括了紅色碟材料（red ph〇sph〇r materiai) (例如.L2 02 S .Eu3+)、綠色碟材料（green ph〇sph〇r material)(例如：ZnS :Cu，Al，Mn)、藍色磷材料（biue Phosphor matenal)(例如：（Sr，Ca，Ba，Mg、（p〇Aci :V. Description of the invention (61) Doped (P-doped) gallium nitride layer 128) As another example, it can be seen that although air is provided on the upper surface 11 〇, cover glass 1 4 in the above embodiment. Between 0, in other embodiments, other materials and / or air may be disposed between the upper surface 110 and the cover glass. Generally speaking, the refractive index of this type of material must be at least about 1, at least about less than 1 · 5 (for example: at least about less than 1 · 4, at least about less than /, 3, at least about less than 1.2, at least about Less than 1 · 1), its material system includes (nitrogen), air, or other gases with high thermal conductivity (therma; i-gas conductivity). In this embodiment, the upper surface 11 () may not be patterned, for example: the upper surface 1 丨〇 may be a non-patterned surface with a roughened surface ^ (for example, it may have any Distribution, various sizes and shapes, its wavelength is less than λ / 5). In some embodiments, the light emitting device may include a layer of phosphor material (layer phosphor), and the layer of phosphor material is coated on the upper surface 110, the cover glass 140, and the supporting member 142. In some embodiments, the cover glass 14 in the light emitting device may be provided with a phosphor material, and the upper surface 110 may or may not be patterned. In another embodiment, the light emitted by the light generating region 130 may be liver (or violet (blue) or blue (blue)), and a red dish is included in the filling material layer 18o. Material (red ph〇sph〇r materiai) (e.g. L2 02 S. Eu3 +), green disc material (e.g. ZnS: Cu, Al, Mn), blue phosphor material (biue Phosphor matenal) (for example: (Sr, Ca, Ba, Mg, (p〇Aci:

Eu2+)。Eu2 +).

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200428682 圖式簡單說明第1圖係表示一發光系統（light emitting system)之示意圖。第2圖係表示具有圖樣表面（patterned surface)之一發光二極體（LED )的側視圖。第3圖係表示根據第2圖之發光二極體（LED )之圖樣表面的上視圖。第4圖係表示相關於具有圖樣表面之一發光二極體 (LED)之引出效率（extraction efficiency)的圖形，其中，圖樣表面係用以作為一調變參數（detuning parameter) ° 第5圖係表示一發光二極體（LED)之圖樣表面之的示意圖（schematic representation) 〇第6圖係表示具有圖樣表面之一發光二極體（LED)之引出效率的圖形，其中，圖樣表面係用以作為一最近相鄰距離（nearest neighbor distance) ° 第7圖係表示具有圖樣表面之一發光二極體（led)之引出效率的圖形，其中，圖樣表面係用以作為一填充因子 (filling factor) 〇第8圖係表示一發光二極體（LED)之圖樣表面的上視圖。第9圖係表示具有不同圖樣表面之複數發光二極體 (LEDs)之引出效率的圖形。第1 0圖係表示具有不同圖樣表面之複數發光二極體 (LEDs)之引出效率的圖形。200428682 Brief Description of Drawings Figure 1 is a schematic diagram showing a light emitting system. Fig. 2 is a side view showing a light emitting diode (LED) having one of the patterned surfaces. Fig. 3 is a top view showing a pattern surface of a light emitting diode (LED) according to Fig. 2. Figure 4 shows a graph related to the extraction efficiency of a light-emitting diode (LED) with a pattern surface, where the pattern surface is used as a detuning parameter ° Figure 5 A schematic representation of a patterned surface of a light-emitting diode (LED). Figure 6 is a graph showing the extraction efficiency of a light-emitting diode (LED) with a patterned surface, where the pattern surface is used for As a nearest neighbor distance ° Figure 7 is a graph showing the extraction efficiency of a light emitting diode (LED) with a pattern surface, where the pattern surface is used as a filling factor 〇 FIG. 8 is a top view showing a pattern surface of a light emitting diode (LED). Fig. 9 is a graph showing extraction efficiency of a plurality of light emitting diodes (LEDs) having different patterned surfaces. Fig. 10 is a graph showing extraction efficiency of a plurality of light emitting diodes (LEDs) having different pattern surfaces.

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圖式簡單說明第11圖係表示具有不同圖樣表面之複數發光二極體 (LEDs)之引出效率的圖形。第1 2圖係表示具有不同圖樣表面之複數發光二極體 (LEDs)之引出效率的圖形。 — 第13圖係表示具有不同圖樣表面之兩發光二極體 (L E D s )之傅立葉轉換的示意圖，其中，此不同的圖樣表面係相比較於兩發光二極體（LEDs)之輻射發射光错 (radiation emission spectrum)而得。第1 4圖係表示具有不同圖樣表面之複數發光二極體 (LEDs)之引出效率的圖形，其中，此不同的圖樣表面係用以作為一角度（angle)。第15圖係表示具有圖樣表面之一發光二極體（Lgj))、且在圖樣表面上形成有一填層（phosphor layer)的側視圖。第16圖係表示經由磊晶層前驅物（epitaxial iayer precursor)之製作下所形成之具有圖樣表體（LED)的侧視圖。九-極第1 7圖係表示經由磊晶層前驅物之製作下所形成之具有圖樣表面之一發光二極體（LED)的側視圖。八第1 8圖係表示經由磊晶層前驅物之製作下所形成之具有圖樣表面之一發光二極體（LED)的側視圖。 /、第1 9圖係表示經由磊晶層前驅物之製作下所形成之具有圖樣表面之一發光二極體（LED)的侧視圖。 ’、第2 0圖係表不經由磊晶層前驅物之製作下所形成之具Brief Description of Drawings Figure 11 is a graph showing the extraction efficiency of a plurality of light emitting diodes (LEDs) with different pattern surfaces. Figure 12 is a graph showing the extraction efficiency of a plurality of light emitting diodes (LEDs) with different pattern surfaces. — Figure 13 is a schematic diagram showing the Fourier transform of two light emitting diodes (LEDs) with different pattern surfaces, where the different pattern surfaces are compared with the radiation emission light errors of two light emitting diodes (LEDs). (radiation emission spectrum). Figure 14 is a graph showing the extraction efficiency of a plurality of light emitting diodes (LEDs) with different pattern surfaces, wherein the different pattern surfaces are used as an angle. Fig. 15 is a side view showing a light emitting diode (Lgj)) on one of the pattern surfaces and a phosphor layer formed on the pattern surface. Fig. 16 is a side view showing a patterned body (LED) formed by forming an epitaxial iayer precursor. Nine-pole Figure 17 shows a side view of a light-emitting diode (LED) having a patterned surface formed by the fabrication of an epitaxial layer precursor. Figure 18 shows a side view of a light emitting diode (LED) with a patterned surface formed by the fabrication of an epitaxial layer precursor. Figure 19 shows a side view of a light emitting diode (LED) with a patterned surface formed by the fabrication of an epitaxial layer precursor. ′, FIG. 20 is a diagram showing a tool formed without the production of an epitaxial layer precursor.

200428682 圖式簡單說明有圖樣表面之一發光二極體（L E D )的側視圖符號說明 1 00〜發光二極體（LED) 120〜載具 1 2 4〜結合層 1 2 6〜銀層（層結構、鏡面層或p -接觸層） 1 2 8〜鎮摻雜（p -摻雜）氮化蘇層 1 3 0〜光產生區域 1 3 2〜氮化鋁鎵層 1 3 4〜石夕晶摻雜（η -摻雜）氮化鎵層 1 1 0〜上表面 1 2 2〜多重推疊層 1 3 6〜接觸墊 140〜蓋玻片 1 4 4〜封膠材料層 1 5 0〜開孔 1 8 0〜含填材料層 2 3 0〜六角單體 5 0〜發光系統 5 0 2〜藍寶石基底 1 3 8〜ρ邊接觸墊 142〜支承構件 1 4 6〜深度 1 5 1〜頂部 1 8 1〜頂部 300〜LED 500〜發光二極體晶圓 5 0 4〜缓衝層 5 0 6〜η -摻雜矽：氮化鎵層 5 0 8〜電流散佈層 5 1 0〜氮化銦鎵/氮化鎵多量子井光產生區域 512〜ρ-摻雜鎂：氮化鎵層 5 2 0〜鎳層 5 24〜鎳層 6 0〜陣列 5 2 2〜銀層 5 2 6〜金層 6 0 0〜載具晶圓200428682 Schematic illustration of a side view of a light emitting diode (LED) with one of the patterned surfaces. Symbol description 1 00 ~ Light emitting diode (LED) 120 ~ Carrier 1 2 4 ~ Bonding layer 1 2 6 ~ Silver layer (layer Structure, mirror layer or p-contact layer) 1 2 8 ~ ball doped (p-doped) nitride nitride layer 1 3 0 ~ light generation region 1 3 2 ~ aluminum gallium nitride layer 1 3 4 ~ Shi Xijing Doped (η-doped) gallium nitride layer 1 1 0 ~ upper surface 1 2 2 ~ multiply push stack 1 3 6 ~ contact pad 140 ~ cover glass 1 4 4 ~ sealing material layer 1 5 0 ~ open Hole 1 8 0 ~ filling material layer 2 3 0 ~ hexagonal monomer 5 0 ~ lighting system 5 0 2 ~ sapphire substrate 1 3 8 ~ ρ edge contact pad 142 ~ support member 1 4 6 ~ depth 1 5 1 ~ top 1 8 1 to top 300 to LED 500 to light emitting diode wafer 5 0 4 to buffer layer 5 0 6 to η-doped silicon: gallium nitride layer 5 0 8 to current spreading layer 5 1 0 to indium nitride GaN / GaN multi-quantum well light generation region 512 ~ ρ-doped magnesium: gallium nitride layer 5 2 0 ~ nickel layer 5 24 ~ nickel layer 6 0 ~ array 5 2 2 ~ silver layer 5 2 6 ~ gold layer 6 0 0 ~ carrier wafer

1057-6267-PF(N2).ptd 第68頁 200428682 圖式簡單說明 6 0 2〜p-摻雜矽晶圓 6 0 8〜金層 7 0 0〜表面結構 7 0 4〜阻層 a〜晶格常數（最近相鄰 a’〜中心至中心間距 G〜倒晶格向量 η〜階數 △ a〜調變參數 ω〜光線頻率 6 0 4〜鋁接觸層 6 1 0〜金鍚結合層 7 0 2〜平坦化層 A 7、A 1 9〜貼圖離（NND))1057-6267-PF (N2) .ptd Page 68 200428682 Brief description of the diagram 6 0 2 ~ p-doped silicon wafer 6 0 8 ~ Gold layer 7 0 0 ~ Surface structure 7 0 4 ~ Resistive layer a ~ Crystal Lattice constant (nearest neighbor a '~ center-to-center distance G ~ inverted lattice vector η ~ order △ a ~ modulation parameter ω ~ light frequency 6 0 4 ~ aluminum contact layer 6 1 0 ~ golden bond layer 7 0 2 ~ planarization layer A 7, A 1 9 ~ texture (NND))

Fk〜傅立葉分量 k、k’〜平面内波向量 Sk〜發射源 £ e〜介電函數（散射強度）Fk ~ Fourier component k, k '~ in-plane wave vector Sk ~ emission source £ e ~ dielectric function (scattering intensity)

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Claims

200428682 六、申請專利範圍 1 · 一種發光系統，包括一發光裝置，該發光裝置包括：一多重推疊材料層，包括一光產生區域及一第一層，該第一層係由該光產生區域所支承，其中，經由該第一層之一表面之設計作用下，由該光產生區域所產生之光線便可經由該第一層之該表面而自該發光裝置發出；該第一層之該表面具有一介電函數，該介電函數係根據一圖樣而進行空間上的改變；該圖樣係具有一理想晶格常數及一調變參數，該調變參數係大於零；以及在該發光裝置之設計作用下，當該光產生區域所產生之光線便可經由該第一層出時’該光線可自該發光系統 2 ·如申請專利範圍第1項發光系統是由投影機、可攜式積標誌、糸統、車輛照明系統、系統、相機閃光燈、醫療裝置統、積體光電系統、軍事地域光動力法療系統、夜視鏡、太照明系統、機場跑道照明系統罩、穿戴式光源及其複數組合 3·如申請專利範圍第}項發光系統係為一投影機。之該表面而自該發光裝置發而發出。所述之發光系統，其中，該電子裝置、電腦螢幕、大面一般照明系統、高亮度照明、通訊系統、保全感測系通信系統、生物感測系統、陽能式運輸照明系統、緊急、航線照明系統、外科面件所構成之群組中選出。所述之發光系統，其中，該200428682 6. Scope of patent application1. A light-emitting system including a light-emitting device, the light-emitting device includes: a multiple layer of stacked material, including a light generating area and a first layer, the first layer is generated by the light Supported by a region, wherein the light generated by the light generating region can be emitted from the light-emitting device through the surface of the first layer under the design of a surface of the first layer; The surface has a dielectric function that is spatially changed according to a pattern; the pattern has an ideal lattice constant and a modulation parameter, the modulation parameter is greater than zero; and Under the design of the device, when the light generated by the light generating area can be emitted through the first layer, the light can be emitted from the light-emitting system. 2 If the patent application scope of the first light-emitting system is a projector, portable Integrated product sign, system, vehicle lighting system, system, camera flash, medical device system, integrated photovoltaic system, military area photodynamic legal treatment system, night vision goggles, too Ming systems, airport runway lighting system enclosure, a light source and a plurality of wearable 3. The composition range of the patent application system} The light-emitting system is a projector. The surface is emitted from the light emitting device. The lighting system, wherein the electronic device, computer screen, large-area general lighting system, high-brightness lighting, communication system, security sensing system communication system, bio-sensing system, solar transportation lighting system, emergency, airline Selected from the group consisting of lighting system and surgical surface. The lighting system, wherein the

1057-6267-PF(N2).ptd 第70頁 200428682 六、申請專利範圍 4·如申請專利範圍第3項所述之發光系統，其中，投影機係為一背投影式投影機。 / 5·如申請專利範圍第4項所述之發光系統，，、中，背投影式投影機係為一電視用之/背投影式投影機。） 6·如申請專利範圍第3項所述之發光系統，其中，該投影機係為—前投影式投影機。 / 7；如申請專利範圍第1項所述之發光系統發光系統係為一車輛照明系統。 8 ·如申請專利範圍第1項所述之發光系統杳光系統係為一般照明系統。 9·如申請專利範圍第1項所述之發光系統發光糸統包括複數發光裝置，各該等發光裝置包括· 一多重推疊材料層，包括一光產生區域及一第一層’ 該第一層係由該光產生區域所支承，其中，各該等發光裝置包括：該該其中，該其中，該其中，該在該第一層之一表面之設計作用下，由該光產生區域所產生之光線便可經由該第一層之該表面而自該發光裝置發出；邊第一層之該表面係具有一介電函數，該介電函數係根據一圖樣而進行空間上的改變；該圖樣係具有一理想晶格常數及一調變參數，調變參數係大於零；以及 / ^1057-6267-PF (N2) .ptd Page 70 200428682 6. Scope of Patent Application 4. The light-emitting system described in item 3 of the scope of patent application, wherein the projector is a rear projection type projector. / 5 · According to the lighting system described in item 4 of the scope of patent application, the rear projection type projector is a television / back projection type projector. ) 6. The lighting system as described in item 3 of the scope of patent application, wherein the projector is a front-projection projector. / 7; The lighting system described in item 1 of the scope of patent application The lighting system is a vehicle lighting system. 8 · The lighting system described in item 1 of the scope of patent application The lighting system is a general lighting system. 9. The light-emitting system of the light-emitting system as described in item 1 of the scope of the patent application includes a plurality of light-emitting devices, each of which includes a multiple layer of stacked material, including a light-generating area and a first layer. One layer is supported by the light-generating area, wherein each of the light-emitting devices includes: the one, the one, the one, and the one under the design of a surface of the first layer, the light-generating area. The generated light can be emitted from the light emitting device through the surface of the first layer; the surface of the side first layer has a dielectric function, and the dielectric function is spatially changed according to a pattern; the The pattern system has an ideal lattice constant and a modulation parameter, and the modulation parameter system is greater than zero; and / ^

在該發光裝置之設計作用下，當該光產生之光線經由該第一層之該表面而自該發光裝置韻成出所Under the design of the light-emitting device, when the light generated by the light passes through the surface of the first layer, the light-emitting device rhymes into a place.

1057-6267-PF(N2).ptd 第71頁 200428682 六、申請專利範圍 13寸，該光線 10·如該等發光裝 11. 如該發光系統 12· 如該發光該發光在該發之光線便可時，該光線 13. 如當遠光產生而自該發光該光線係通 14·如該發光系統一部分發光 15.如該發光系統均具有相同 16. 一可自該申請專置係以申請專包括該申請專裝置係裝置係光裝置經由該可自該申請專區域所裝置發過了至申請專包括複裝置係申請專包括複的尖峰種發光發光系利範圍陣列方利範圍等發光利範圍包括了設置於之設計第一層發光系利範圍產生之出時、少一光利範圍數發光具有不利範圍數發光發射波系統，括：統而發出。第9項所述之發光系統，式排列。第1 0項所述之發光系統裝置之複數陣列。第1項所述之發光系統· 具有一表面之一殼體；該殼體之中；以及作用下’當邊光產生區之該表面而自該發光裝統而發出。第1項所述之發光系統，光線便可經由該第一層該光線自該發光系統發學元件。第1項所述之發光系統，裝置，於該等發光裝置同的尖峰發射波長。第1項所述之發光系統，裝置，該等發光裝置係長。包括一發光裝置，該發光裝置包其中， ’其中，其中：域所產生置發出其中，之該表面出之前，其中，中之至少其中，於實質上 -多重推疊材料層，包括一光產生區域及一第一層1057-6267-PF (N2) .ptd Page 71 200428682 6. The scope of the patent application is 13 inches, the light 10 · such as the light-emitting device 11. If the light-emitting system 12 · If the light-emitting light is emitted in the light If necessary, the light 13. If the high beam is generated and the light is emitted, the light is connected 14. If the light system is part of the light 15. If the light systems are the same 16. One can apply for special Including the application-specific device, the device, the light device, and the device, the device can be issued from the device in the application area to the application, including the complex device. Included in the design of the first layer of the luminous range of the design is generated, the luminous range of one less luminous range has a disadvantageous luminous emission wave system, including: The lighting system described in item 9 is arranged in a pattern. A plurality of arrays of the lighting system devices described in item 10. The light-emitting system according to item 1 has a casing with a surface; inside the casing; and, under the action, the surface of the edge light generating area is emitted from the light-emitting system. In the light-emitting system described in item 1, light can pass through the first layer, and the light is emitted from the light-emitting system's element. The light emitting system and device described in item 1 emit at the same peak emission wavelength as those light emitting devices. The light-emitting system, device described in item 1, and the light-emitting device are directors. The light-emitting device includes a light-emitting device in which, 'wherein: where the field-generating device is emitted, and before the surface emerges, at least one of which is substantially-multiply pushing the material layer, including a light-generating device. Area and a first floor

第72頁 200428682 六、申請專利範圍該第一層係由該光產生區域故I Λ所支承，i中，經由該第一層之一表面 ^ ” T 生區域所產生之光線便可經由之^又"十作用下’由該光產光裝置發出； Λ第一層之該表面而自該發該表面係具有一介電a ^ 非周期性圖樣而進行空間上文’該介電函數係根據一發光裝置，該發光裝置包在該發光裝置之設計作用下，告/及之光線便可經由該第一層之註’當該光產生區域所產生時，該光線可自該發光系統=發=而自該發光裝置發出 17· —種發光系統，包括括：一多重推疊材料層，包括〜該第一層係由該光產生區域所區域及一第一層， λ-， 1叉承，J:中，經由該第一層之一表面，、生區域所產生之光線便可經由診5又j十作用下，由該光產光裝置發出； ^弟一層之該表面而自該發该表面係具有一介電函壑複雜周期性圖樣而進行空間上數该"電函數係根據一在該發光裝置之設計作^改=以及之光線便可經由該第一層之該 *该光產生區域所產生時’該光線可自該發光系統而發：而自該發光裝置發出 18 ·夕—種發光系統’包括： Ρ摻雜材夕重推疊材料層，包括— 料層、—朵 η換雜材料層九產生區域；以及曰Page 72 200428682 6. The scope of the patent application The first layer is supported by the light generating region I Λ, and in i, the light generated by passing through a surface of the first layer ^ "T generating region can pass through ^ "In ten actions," issued by the light-emitting device; Λ the surface of the first layer, and from the surface, the surface has a dielectric a ^ aperiodic pattern and space above "the dielectric function system According to a light-emitting device, the light-emitting device is packaged under the design of the light-emitting device, and the light can pass through the note of the first layer. 'When the light-generating area is generated, the light can pass from the light-emitting system =发 = and 17 · light emitting systems emitted from the light emitting device, including: a multiple layer of push-up material, including ~ the first layer is an area formed by the light generating area and a first layer, λ-, 1 Fork bearing, J: Middle, through one surface of the first layer, the light generated in the biological area can be emitted by the light-generating device through the action of the light and the light; The surface is complicated by a dielectric function The periodic pattern is spatially counted. The "electrical function is based on a design change in the design of the light-emitting device, and the light can pass through the first layer when the * the light generating area is generated. Emitted from the light-emitting system: and 18 from the light-emitting device-a kind of light-emitting system 'includes: a P-doped material and a stacked material layer, including-a material layer, and a n-doped material layer; As well

1057-6267-PF(N2).ptd 200428682 六、申請專利範圍 ^ I反射材料層，可將經由該光產生區域所產生、且撞 #在具有該反射材料層上之至少約5〇%之光合里射材料層之該反射材料所反射，其中， ’曰被该反區域所Λ該η摻雜材料層之一表面的設計下，由該光產生 ;發光盒線便可經由該η摻雜材料層之該表… /亥η摻雜材料層之該表面係具有一介電函數，兮入電幽數係根據—圖樣而進行空間上的改變； ;丨 β A Μ該1"摻雜材料層與該反射材料層之間的距離係+ π 该Π摻雜材料層與該反射材料層之間的距離；卩及離幻於 f該發光裝置之設計作用下’當該光產生區域所發出ί便：Lt該η摻雜材料層之該表面而自該發光裝置出日守该先線可自該發光系統而發出。括：1 9·種發光系統’包括-發光裝置’該發光装置包該第=:==括—光產生區域及-第-層， = 光產生區域所產生之光線便可經由有表ST發光農置發出，並且該表面係具 Ϊ變數’该介電函數係根據-圖樣而進行空間上的擊在：=才Γ層’可將經由該光產生區域所產生、且撞材料層上之至少約50%之光線係會被該反射材枓層之垓反射材料所反射，其中，久1057-6267-PF (N2) .ptd 200428682 Sixth, the scope of patent application ^ I reflective material layer, can be generated through the light generation area, and hit # at least about 50% of the photosynthetic material on the reflective material layer The reflective material of the injecting material layer is reflected by the reflective material, wherein, "the surface of the n-doped material layer Λ is designed by the anti-region, is generated by the light; the light-emitting box wire can pass through the n-doped material The surface of the layer ... / The surface of the doped material layer has a dielectric function, and the electrical conductivity is spatially changed according to the pattern; β A The the doped material layer and The distance between the reflective material layers is + π the distance between the Π doped material layer and the reflective material layer; and the distance from the light emitting device under the design effect of the light emitting device is : Lt the surface of the n-doped material layer and the front line from the light emitting device can be emitted from the light emitting system. Including: 19 types of light-emitting system 'including-light-emitting device', the light-emitting device includes the first =: == brackets-light-generating area and --th-layer, = light generated by the light-generating area can emit light through the table ST Issued by the farm, and the surface system has a Ϊvariable 'the dielectric function is based on the -pattern and spatially strikes at: = only the Γ layer' can generate at least through the light generation area and hit at least the material layer About 50% of the light will be reflected by the reflective material of the reflective layer.

200428682 六、申請專利範圍該光產生區域係位於該反射材料層盥該第一間；在該發光裝置之設計作用下，當該光產生區域戶產生之光線便可經由該第一層之該表面而自該發光裝斤出時，該光線可自該發光系統而發出。、發 2 0· 一種發光系統，包括一發光裝置，該發光妒括：、意包一多重推疊材料層，包括一光產生區域及一第一屑該第一層係由5亥光產生區域所支承，經由該第一層之〜面之設計作用下，由該光產生區域所產生之光線便可麵表該第一層之該表面而自該發光裝置發出；以及、、丈由一材料，接觸於該第一層之該表面，該材料之折約小於1 · 5，其中，該發光裝置係經由封裝方式而加率覆，並且在該發光裝置之設計作用下，當該光產生區^ 產生之光線便可經由該第一層之該表面而自該發光妒署所出時，該光線可自該發光系統而發出。、夏發 21 · 一種發光系統，包括一發光裝置，該發光梦括：、夏包一多重推疊材料層，包括一光產生區域及一第一該第一層係由該光產生區域所支承，經由該第一層二，面之設計作用下’由該光產生區域所產生之光線便可細f 該第-層之該表面而自該發光裝置發出，並且該表面=由有-介電函數’該介電函數係根據一圖樣而進行卜、具改變；以及 j上的200428682 6. Scope of patent application The light generating area is located in the first room of the reflective material layer; under the design of the light emitting device, when the light generated by the light generating area can pass through the surface of the first layer When emitted from the light emitting device, the light can be emitted from the light emitting system. A light-emitting system includes a light-emitting device, the light-emitting device includes: a multi-ply material layer including a light-generating area and a first chip; the first layer is generated by 5H Supported by the area, the light generated by the light-generating area can be emitted from the light-emitting device to face the surface of the first layer under the design effect of the first surface of the first layer; and Material, which is in contact with the surface of the first layer, and the material is reduced to less than about 1.5, wherein the light emitting device is covered by a packaging method, and under the design of the light emitting device, when the light is generated When the light generated by the area ^ can pass through the surface of the first layer and come out of the light emitting jealousy department, the light can be emitted from the light emitting system. Xiafa 21 · A light-emitting system including a light-emitting device, the light-emitting dream includes:, a summer bag with multiple layers of push-pull material, including a light-generating area and a first first layer formed by the light-generating area The support, through the design of the first layer and the second surface, 'the light generated by the light generating area can be thin f the surface of the first layer and emitted from the light emitting device, and the surface = by 有-介Electrical function 'The dielectric function is changed according to a pattern, with changes; and

1057-6267-PF(N2).ptd 第75頁光線係經由该第一層之該表面而發出，並且與該磷材料間產生父互作用，使得經由該磷層所發出光線於實質係為白光’其中，該發光裝置之高度與其面積之間二:匕 200428682 六、申請專利範圍一鱗材料，由該第一層之該表面所支承，其中，該光裝置之側壁於實質上係完全不具有該磷材料，並且在發光裝置之設計作用下，當該光產生區域所產生之光線可經由該第一層之該表面而自該發光裝置發出時，該光可自該發光系統而發出。 22. 一種發光系統，包括一發光裝置，該發光裝置括·· 一多重推疊材料層，包括一光產生區域及一第一層該第一層係由该光產生區域所支承’經由該第一層之一面之設計作用下’由该光產生區域所產生之光線便可經該第一層之該表面而自該發光裝置發出，並且該表面係有一介電函數，該介電函數係根據一圖樣而進行空間上改變；以及一磷材料，經設計下係使得由該光產生區域所產生係小到足以允許白光可以任何方向進行延伸，豆中，光裝置之高度與其面積之間的比值係小到足以允許白以任何方向進行延彳φ，並且太w 當該光產生區域所】生之光發光裝置之設計作用 & Α #I上*气線便可經由該第一層之該 21i置發出時’該光線可自該發光系統而發括：·發光系統，包括—發光裝置，該發光裝發該便線包表由具的之之上值發可 5 面 Ο 包1057-6267-PF (N2) .ptd Page 75 The light is emitted through the surface of the first layer, and a parent interaction occurs with the phosphorous material, so that the light emitted through the phosphorous layer is white in nature. 'Among them, the height of the light-emitting device and its area are two: D 200428682 6. The scope of the patent application is a scale material supported by the surface of the first layer, wherein the side wall of the light device is essentially completely free of The phosphor material, and under the design of the light emitting device, when the light generated in the light generating region can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system. 22. A light-emitting system comprising a light-emitting device, the light-emitting device comprising a multiple layer of push-over material, including a light-generating area and a first layer, the first layer being supported by the light-generating area 'through the Under the design of one surface of the first layer, the light generated by the light generating area can be emitted from the light-emitting device through the surface of the first layer, and the surface has a dielectric function, and the dielectric function is Make a spatial change according to a pattern; and a phosphorous material designed to make the light generated by the light-generating area small enough to allow white light to extend in any direction. In the bean, the height of the light device and its area The ratio is small enough to allow white to extend in any direction, φ, and too w. When the light-emitting area is designed, the design of the light-emitting device & A # I * gas line can pass through the first layer When the 21i device emits, the light may be emitted from the light-emitting system: The light-emitting system includes a light-emitting device, and the light-emitting device may emit light from the above-mentioned value. 5 sides Ο bag

1057-6267-PF(N2).ptd1057-6267-PF (N2) .ptd

第76頁申請專利範圍該第-層係由2巴J括-光產生區域及-第-層♦ 面之設計作用下，由該叮叉承，經由邊弟層一丄 it % — μ n参；二產生區域所產生之光線便可經由弟一 f之絲面而自該發光裳置發出；質上俜：：:】1 ’包括—材質，1玄第-薄片之該材質於實可讓光線自發光裳置而發出；以及第一箄兮丄包括—磷材料，該第二薄片係鄰接於該 %片，Γΐ裝置係經由封裝方式而加以包覆，該第溥片、该第二簿Η伤1 ρ α 包覆之封裝的一部八，、構成了用以對於發光裝置進行且在該發光裝置之設計作用τ，而自該發光裝置發出時=可經由該第-層之該ΐ面 24 - ^ , . J 6亥光線可自該發光系統而發出。括： %糸、，先’包括一發光裝置，該發光裝置包 1菌一 ίΓΠ材料層，包括-光產生區域及-第-層， §亥弟一層係由該光產生區域所支承，其中’ ，厂該第一層之-表面之設計作用下，由該光產 &域所產生之先線便可經由該自該發光裝置發出； 3第層之忒表面係具有一介電函數，該介電函數係根據一圖樣而進行空間上的改變；經該圖樣之設計下’由該光產生區域所產生、且經由該第一層之該表面而自該發光裝置所發出光線之光線分佈係較光線之拉普拉斯分佈較為平行；以及Scope of patent application on page 76 The first layer is composed of 2 bar, including the light-generating area and the first layer. Under the design of the surface, it will be carried by the fork, and it will pass through the edge layer. ; The light generated in the second generation area can be emitted from the luminous dress through the silk surface of the first one; In essence, the ::: 1] includes-material, 1 Xuandi-the material of the sheet can actually let The light emanates from the luminous clothes; and the first device includes a phosphorus material, the second sheet is adjacent to the% sheet, and the device is covered by a packaging method, the first sheet, the second book A wound of 1 ρ α encapsulates a part of the package, which constitutes the light-emitting device and is used in the design of the light-emitting device τ, and when emitted from the light-emitting device = can pass through the first layer of the ΐ Face 24-^,. J 6 Hai light can be emitted from the lighting system. Including:% 糸, first 'including a light-emitting device, the light-emitting device includes a bacterium and a layer of material, including-a light-generating region and-a-layer, § The first layer is supported by the light-generating region, where' Under the design of the surface of the first layer of the factory, the front line generated by the photonic & domain can be emitted through the self-emitting device; The dielectric function is spatially changed according to a pattern; under the design of the pattern, the light distribution of 'light generated from the light-generating region and emitted from the light-emitting device through the surface of the first layer is Laplace distribution more parallel than light; and

l〇57-6267-PF(N2).ptdl〇57-6267-PF (N2) .ptd

第77頁 200428682 申請專利範圍在該發光裝置之設計作用下，當該光產生區域所產生之光線便可經由該第一層之該表面而自該發光裝置發出時，該光線可自該發光系統而發出。括2 5. 一種發光系統，包括一發光裝置，該發光裝置包 —一多重推豐材料層，包括一光產生區域及一第一層，该第一層係由該光產生區域所支承，因而在該發光枣使用過程中，由該光產生區域所產生之光線便可經由誃一層之該表面而自該發光裝置發出，其中，夕該第一層之該表面具有一介電函數，該介電函盤係根據一圖樣而進行空間上的改變，並且於該光產生所產生之總光線強度的至少約為45%係會經由該發光f域之該表面而發出；以及、罝在:亥’务光i置之設計作用下，當該光產生區域所產生之光線便可經由該第一層之該表面而自該發 '斤出時，該光線可自該發光系統而發出。、置發括：26·—種發光系統’包括—發光裝置，該發^置包 μ 一： f ί疊材料層’包括一光產生區域及-第-展使用過程中，由該光彦峰f:支ί @而在該發光裳置之 -層之該表面而自該發光裴'置：出生J:線便可經由讀第為1公爱該緣，該邊緣之長度係至少約且在汶舍先爰置之設計下，該發光裝置之2 200428682 申請專利範圍引出效率於實質上係與該邊緣之該長度無關；以及產味之發光裝置之設計作用下，當該光產生區域所 =^可經由該第一層之該表面而自該發光裝出守4先線可自該發光系統而發出。、 • 2 7 · 種發光系統，包括一發光裝置，該發光裝置括· 夏包二斤一多重推疊材料層，包括一光產生區域及一第一屑該第一層係由該光產生區域所支承，因而在該發光裝^ ’ 使用過程中’由該光產生區域所產生之光線便可經由誃= 一層之該表面而自該發光裝置發出，其中， ^弟該發光裝置具有一邊緣，該邊緣之長度係至少為1公釐，並且在該發光裝置之設計下，該、、引出效率於實質上係與該邊緣之該長度無關；以1 〜在該發光裝置之設計作用下，當該光產生區域產生之光線便可經由該第一層之該表面而自該發光襄置厅出時’該光線可自該發光系統而發出D X 種發光系統’包括一發光裝置’該發光裝置包一多重推疊材料層，包括一光產生區域及一第一屑該第一層係由該光產生區域所支承，因而在該發光裝^二使用過程中，由該光產生區域所產生之光線便可經由該^ 一層之該表面而自該發光I置發出，其中，該發光裝置具有一邊緣，該邊緣之長度係至少為1公釐，並且在該發光裝置之設計下，該發光裝置之〜Page 77 200428682 Patent application scope Under the design of the light emitting device, when the light generated in the light generating area can be emitted from the light emitting device through the surface of the first layer, the light can be emitted from the light emitting system And issued. Enclose 2 5. A light-emitting system, including a light-emitting device, the light-emitting device package-a layer of multiple push material, including a light-generating area and a first layer, the first layer is supported by the light-generating area, Therefore, during the use of the light-emitting jujube, the light generated by the light-generating area can be emitted from the light-emitting device through the surface of the first layer, wherein the surface of the first layer has a dielectric function. The dielectric letter disc is spatially changed according to a pattern, and at least about 45% of the total light intensity generated by the light generation is emitted through the surface of the light emitting f-domain; and, Under the design of the Haiguang Project, when the light generated by the light generating area can pass through the surface of the first layer and exit from the light source, the light can be emitted from the lighting system. The installation includes: 26 · —a kind of light-emitting system including: a light-emitting device, the light-emitting device includes a: f ί a layer of material 'including a light-generating area and-during the use of the exhibition, by the light Yanfeng f : 支 ί @And on the surface of the luminous clothes-layer and from the luminous Pei's place: Born J: The line can be read by the first public love the edge, the length of the edge is at least about and in Wen Under the design of the first device, the extraction efficiency of the patent application scope of the 2004 20042682 is essentially independent of the length of the edge; and the design of the light-emitting device that produces odor, when the light generation area is = ^ The front line can be emitted from the light emitting device through the surface of the first layer and can be emitted from the light emitting system. A light-emitting system including a light-emitting device including: a summer bag, two pounds, and a multiple layer of stacked materials, including a light generating area and a first chip; the first layer is generated by the light It is supported by the area, so the light generated by the light-generating area during the use of the light-emitting device can be emitted from the light-emitting device through the surface of 誃 = one layer, wherein the light-emitting device has an edge The length of the edge is at least 1 mm, and under the design of the light-emitting device, the extraction efficiency is substantially independent of the length of the edge; with 1 ~ under the design of the light-emitting device, When the light generated by the light generating area can pass through the surface of the first layer and exit the light emitting hall, the light can be emitted from the light emitting system and the DX light emitting system includes a light emitting device and the light emitting device. A multi-ply material layer is included, including a light generating area and a first chip. The first layer is supported by the light generating area. Therefore, the light generating area is used by the light generating area during the use of the light emitting device. The generated light can be emitted from the light emitting device through the surface of the first layer, wherein the light emitting device has an edge, and the length of the edge is at least 1 mm, and under the design of the light emitting device, The lighting device ~

1057-6267-PF(N2).ptd 第79頁 200428682 六、申請專利範圍引出效率於實質上係與該邊緣之該長度無關’以及在該發光裝置之設計作用下’當該光產生區域所產生之光線便可經由該第一層之該表面而自該發光裝置發出時，該光線可自該發光系統而發出。 2 9.如申請專利範圍第1項所述之發光系統，其中，該第一層之該表面係具有尺寸約小於λ / 5之特徵，其中， λ係為經由該光產生區域所產生、立可經由該第一層之該表面而自該發光裝置發出之光線的波長。 3 0.如申請專利範圍第1 6項所述之發光系統，其中，該第一層之該表面係具有尺寸約小於λ / 5之特徵，其中， λ係為經由該光產生區域所產生、且可經由該第一層之該表面而自該發光裝置發出之光線的波長。 31. 如申請專利範圍第1 7項所述之發光系統，其中，該第一層之該表面係具有尺寸約小於λ / 5之特徵，其中， λ係為經由該光產生區域所產生、且可經由該第一層之兮表面而自該發光裝置發出之光線的波長。 32. 如申請專利範圍第18項所述之發光系統，其中，該η摻雜材料層之該表面係具有尺寸約小於λ /5之特徵，’ 其中，又係為經由該光產生區域所產生、且可經由节^ 層之該表面而自該發光裝置發出之光線的波長。Λ弟 μ 33·如申請專利範圍第1 9項所述之發光系統，| 該第一層之該表面係具有尺寸約小於λ / 5之特徵，^ ， λ係為經由該光產生區域所產生、且可經由該第一中，表面而自該發光裝置發出之光線的波長。^ 一層之該1057-6267-PF (N2) .ptd Page 79 200428682 6. The extraction efficiency of the patent application scope is essentially independent of the length of the edge 'and under the design of the light-emitting device' When light can be emitted from the light-emitting device through the surface of the first layer, the light can be emitted from the light-emitting system. 2 9. The light-emitting system according to item 1 of the scope of patent application, wherein the surface of the first layer has a feature of a size less than about λ / 5, wherein λ is generated by the light-generating area, The wavelength of light that can be emitted from the light emitting device through the surface of the first layer. 30. The light-emitting system according to item 16 of the scope of the patent application, wherein the surface of the first layer has a feature of a size less than about λ / 5, wherein λ is generated by the light generating area, And the wavelength of the light emitted from the light emitting device through the surface of the first layer. 31. The light-emitting system according to item 17 in the scope of the patent application, wherein the surface of the first layer has a feature of a size less than about λ / 5, wherein λ is generated through the light generating area, and The wavelength of light that can be emitted from the light emitting device through the surface of the first layer. 32. The light-emitting system according to item 18 of the scope of the patent application, wherein the surface of the n-doped material layer has a feature of a size less than about λ / 5, and wherein the surface is generated by the light generating region. And a wavelength of light emitted from the light emitting device through the surface of the node layer. Λ brother μ 33 · As described in the patent application scope item 19, the light emitting system, | the surface of the first layer has a characteristic of less than about λ / 5, ^, λ is generated by the light generation area And a wavelength of light emitted from the light emitting device through the first surface. ^ One should

1057-6267-PF(N2).ptd 第80頁 200428682 六、申請專利範圍 34. 如申請專 5亥弟一層之邊表面 λ係為經由該光產表面而自該發光裝 35. 如申請專該第一層之該表面 λ係為經由該光產表面而自該發光裝 3 6· 如申請專該第一層之該表面 λ係為經由邊光產表面而自該發光裝 3 7. 如申請專該第一層之該表面 λ係為經由該光產表面而自該發光裝 38. 如申請專該第一層之該表面 λ係為經由該光產表面而自該發光裝 39. 如申請專該第一層之該表面 Α係為經由該光產表面而自該發光裝利範圍第2 0項所係具有尺寸約小生區域所產生、置發出之光線的利範圍第2 1項所係具有尺寸約小生區域所產生、置發出之光線的利範圍第2 2項所係具有尺寸約小生區域所產生、置發出之光線的利範圍第2 3項所係具有尺寸約小生區域所產生、置發出之光線的利範圍第2 4項所係具有尺寸約小生區域所產生、置發出之光線的利範圍第25項所係具有尺寸約小生區域所產生、置發出之光線的光系統之特徵由該第光系統之特徵由該第光系統之特徵由該第光系統之特徵由該第光糸統，其中，之特徵，其中，由該第一層之該光系統，其中，之特徵，其中，由該第一層之該1057-6267-PF (N2) .ptd Page 80 200428682 VI. Application for patent scope 34. If applying for the edge surface λ of the first layer, the light emitting device shall pass from the light-emitting surface 35. If applying for The surface λ of the first layer is from the light emitting device through the light-emitting surface 3 6 · If applying for the surface of the first layer λ is from the light emitting device through the light-emitting surface 3 7. If applied The surface λ of the first layer is made from the light emitting device through the light-emitting surface. 38. The surface λ of the first layer is made from the light emitting device 39 through the light-emitting surface. The surface A of the first layer is the area of interest of the light emitting area generated by the light emitting area from the light-emitting area No. 20 through the light-emitting surface area No. 21 The benefit range of the light with the size of the niche area and the emission of the item No. 22 is the range of benefit with the size of the niche area and the emission of the light. Set the scope of the rays of light emitted by item 2 4 The benefit range of the light system with the size of the niche area and the emission of light. Item 25 refers to the characteristics of the light system with the size of the niche area and the emission of light. The characteristics of the light system are determined by the characteristics of the light system. The feature is the feature of the first light system, the feature of the first light system, among which, the feature of the light system of the first layer, the feature of, wherein, the feature of the first layer

1057-6267-PF(N2).ptd 第81頁 200428682 六、申請專利範圍 4 0. 如申請專利範圍第2 6項所述之發光系統，其中，該第一層之該表面係具有尺寸約小於λ / 5之特徵，其中， λ係為經由該光產生區域所產生、且可經由該第一層之該表面而自該發光裝置發出之光線的波長。 41.如申請專利範圍第2 7項所述之發光系統，其中，該第一層之該表面係具有尺寸約小於λ / 5之特徵，其中， λ係為經由該光產生區域所產生、且可經由該第一層之該表面而自該發光裝置發出之光線的波長。1057-6267-PF (N2) .ptd Page 81 200428682 VI. Patent application scope 40. The light-emitting system described in item 26 of the patent application scope, wherein the surface of the first layer has a size less than about A feature of λ / 5, wherein λ is a wavelength of light generated from the light-emitting device through the surface of the first layer and passing through the surface of the first layer. 41. The light-emitting system according to item 27 of the scope of the patent application, wherein the surface of the first layer has a feature of a size less than about λ / 5, wherein λ is generated through the light generating area, and The wavelength of light that can be emitted from the light emitting device through the surface of the first layer.

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