TW200423201A - Plating apparatus and plating method - Google Patents

Plating apparatus and plating method Download PDF

Info

Publication number
TW200423201A
TW200423201A TW093101713A TW93101713A TW200423201A TW 200423201 A TW200423201 A TW 200423201A TW 093101713 A TW093101713 A TW 093101713A TW 93101713 A TW93101713 A TW 93101713A TW 200423201 A TW200423201 A TW 200423201A
Authority
TW
Taiwan
Prior art keywords
substrate
anode
plating
porous
seed layer
Prior art date
Application number
TW093101713A
Other languages
Chinese (zh)
Other versions
TWI322452B (en
Inventor
Keiichi Kurashina
Keisuke Namiki
Tsutomu Nakada
Koji Mishima
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2003015236A external-priority patent/JP4312465B2/en
Priority claimed from JP2003149827A external-priority patent/JP4423354B2/en
Priority claimed from JP2003161237A external-priority patent/JP4423355B2/en
Priority claimed from JP2003161236A external-priority patent/JP4361760B2/en
Application filed by Ebara Corp filed Critical Ebara Corp
Publication of TW200423201A publication Critical patent/TW200423201A/en
Application granted granted Critical
Publication of TWI322452B publication Critical patent/TWI322452B/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/04—Electroplating with moving electrodes
    • C25D5/06—Brush or pad plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/001—Apparatus specially adapted for electrolytic coating of wafers, e.g. semiconductors or solar cells
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D17/00—Constructional parts, or assemblies thereof, of cells for electrolytic coating
    • C25D17/10—Electrodes, e.g. composition, counter electrode
    • C25D17/14—Electrodes, e.g. composition, counter electrode for pad-plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D21/00—Processes for servicing or operating cells for electrolytic coating
    • C25D21/12—Process control or regulation
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/20—Electroplating using ultrasonics, vibrations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76879—Filling of holes, grooves or trenches, e.g. vias, with conductive material by selective deposition of conductive material in the vias, e.g. selective C.V.D. on semiconductor material, plating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

This invention provides a plating apparatus capable of allowing a metal plating film such as a copper film to selectively grow in a fine cavities of the circuit wiring containing a pattern of trenches and via holes. The plating apparatus is provided with an anode, a plating solution impregnated member for keeping a plating solution, an electrode head having a porous contact member to contact the surface of a substrate, a cathode electrode contacting the substrate for supplying electric current to the substrate, a pushing mechanism for adjustably pushing the porous contact member of the electrode head against the surface of the substrate, and a power source for supplying a plating voltage between the anode and the cathode electrode. The apparatus is further provided with a control unit for controlling the pushing state of the porous contact member of the electrode head against the surface of the substrate in relation with the status of the plating voltage supplied between the anode and the cathode electrode.

Description

200423201 玖、發明說明 【發明所屬之技術領域】 本發明係關於一種電鍍裝置及電鍍方法，尤其是關於 在形成於半導體基板等基板上的微細配線圖案埋入銅等的 金屬（配線材料）以形成配線時所使用之電鍍裝置及電錢方 法。 【先前技術】 ^最近，有一種在半導體基板上，形成電路狀的溝渠和 穿孔（via hole)等配線用之微細凹部，再透過電鍍銅以銅（配 線材料）來填埋該等微細凹部，並利用化學機械研磨（CMP :Chemical Mechanical p〇lishing)等裝置去除剩餘部分的 鋼層（電鍍膜），以形成電路的技術正被運用中。在該項技術 中，以於電路狀的溝渠或穿孔中選擇性地析出銅電鍍膜， 而在其他部分析出較少的銅電鍍膜，對減少之後的CMP工 曰來兒較為理想。以往，為達成上述目的，對電鑛液的 鍍浴組成、所使用的光澤劑等電鍍液下了 一番工夫。 “另方面，在用以選擇性地於電路狀溝渠等中析出銅 :鍍膜的技術中’習知有令多孔質體與半導體晶圓等基板 妾觸，再使接觸方向一邊相對移動一邊進行電鍍的方法（例 ^ Ϊ =日本專利特開2〇00-232078號）。使用在該技術的多 ^ 有將PVA(p〇iyvinyl dlc〇h〇1 ••聚乙烯醇）、多孔質 ，弗4 &冊商標）’及聚丙稀等編成纖維狀，或加工》鹿成 紙狀者，H ^， 般上使用凝膠化氧化矽或瓊脂（agar)質等 非定形物體等。 、 315432 5 200423201 ^疋’為了要在溝渠等®案部的内部完全填埋銅等配 ….形成銅配線，必須在圖案部之外也要形成相當厚 展5層’且要利用CMP法去除成膜在圖案部以外的多餘銅 '。因此’在應去除的銅量較多的情況時，CMP的時間變 長’不僅關係到成本的上異 目；^ 在CMP後的基板研磨 面出現面内不均一性日羊 ^ 7研磨後殘留的配線深度在基板面 不同其、纟。果’研磨時間愈長，配線性[Μ 仰賴性變得愈高。 I白勺 為了解決上述之問題，對電錢液的鐘浴組成、與所使 用的光澤劑等電錢液;^鲁了 ^ W 化費了 -番工夫，藉此等方式雖然多 y ~目的，但也有一定的極限。 另一方面’於令多孔質體與基板接觸，且一邊令接觸 方向相對性移動一邊進行電鍍的方法中，肖多孔質體的表 :粗糙度，-般上為數微米到數百微米，具有該種表面粗 k度的多孔質體，要將表面粗棱度為次微米到數微米的半 導體基板上的凹凸面加以平坦化有其問題存在。200423201 发明 Description of the invention [Technical field to which the invention belongs] The present invention relates to a plating device and a plating method, and more particularly, to embed a fine wiring pattern formed on a substrate such as a semiconductor substrate by burying a metal such as copper (wiring material) to form a wiring pattern. Electroplating device and electricity method used for wiring. [Previous technology] ^ Recently, there are micro recesses for wiring such as circuit trenches and via holes on semiconductor substrates, and these micro recesses are filled with copper (wiring material) through electroplated copper. And the use of chemical mechanical polishing (CMP: Chemical Mechanical Polishing) and other equipment to remove the remaining part of the steel layer (plating film) to form a circuit technology is being used. In this technology, copper plating film is selectively deposited in the trenches or perforations of the circuit, and less copper plating film is analyzed in other parts, which is ideal for the reduction of the CMP process. In the past, in order to achieve the above-mentioned object, a great deal of effort has been made on the composition of the plating bath of the electro-mineral liquid and the plating solution such as the glossing agent used. "On the other hand, in the technique for selectively depositing copper: plating on circuit-like trenches, etc.," it is known to make a porous body contact a substrate such as a semiconductor wafer, and then electroplating while moving the contact direction relatively. Method (example ^ Ϊ = Japanese Patent Laid-Open No. 2000-232078). Many of the techniques used in this technology include PVA (p〇iyvinyl dlc〇h〇1 • • polyvinyl alcohol), porous, Eph 4 & Bookmarks) 'and polypropylene, etc. are made into a fibrous form, or processed "deer into a paper form, H ^, in general use of gelled silica or agar (agar) and other amorphous objects, etc., 315432 5 200423201 ^ 疋 'In order to completely fill copper and other components in the trenches and other parts of the case ... To form copper wiring, it is necessary to form a considerable thickness of 5 layers in addition to the pattern part' and to remove the formed film on the pattern by the CMP method Excess copper outside the substrate. 'Therefore,' When the amount of copper to be removed is large, the CMP time becomes longer '. It is not only related to the cost difference; ^ In-plane nonuniformity appears on the polished surface of the substrate after CMP. The depth of the wiring remaining after Nikko ^ 7 grinding differs on the substrate surface.纟. The longer the grinding time, the higher the wiring property [Μ depends on. I in order to solve the above-mentioned problems, the composition of the bell bath of electric money liquid, and the use of brighteners and other electric money liquid; ^ It ’s a lot of work, but it ’s a lot of work, but it has some limits. On the other hand, it ’s performed while the porous body is in contact with the substrate and the contact direction is relatively moved. In the electroplating method, the surface of the porous body is: roughness, generally several micrometers to hundreds of micrometers. For a porous body with a surface roughness of k degrees, the surface roughness must be from sub-microns to several micrometers. There is a problem in flattening the uneven surface on the semiconductor substrate.

V 又在該技術中，嘗試著藉由一邊接觸多孔質體一邊對 接觸面進行水平方向的相對性移動（磨擦），以凹凸部來改 變電鐘液的供給量’而提昇平坦性。但是由於上述的表面 粗糙度’而有難以獲得想要效果之問題存在。再者，由於 多孔質體表面的表面粗糙度或將多孔質體朝基板的被電鑛 面按麗時產生在該多孔質體的波狀或反㈣，很難將整個 多孔質體均句地密接按壓在基板的被電鍍面，0此，如第 50圖所示’在多孔質體A與基板w的被電鍍面p之間， 315432 6 200423201 產生局部性的間隙S，而在該間隙s存在電鍍液q，存在 於該間隙S的電鍍液Q所含有的Cu2+等之離子有助於電 鐘，而造成電錄的面内成不均勻的問題。 再者，藉由加大用以接觸多孔質體的載重來壓垮多孔 質體的空間部，雖能提昇平坦性’但是在那種情形下，需 要對基板施加非常大的載重，因此，在以1〇w_kM等柔軟 的絕緣膜作為對象時，而有絕緣膜會受到破壞，且在電鍍 膜表面也容易產生傷痕等難以實現化的問題。 使用在形成該種微細的高縱橫比之配線之電鍍的電 鍍裝置方面，習知有將表面（被電鍍面）朝上（face up)並保 持基板，令陰極電極接觸該基板的周邊部，把基板表面當 作陰極之同時，將陽極配置在基板的上方，一邊將電鍍液 ^滿基板與陽極之間，一邊施加電鍍電壓於基板（陰極）與 陽極之間，來進行電鍍基板表面（被電鍍面）的技術（例如參 照曰本專利特表2002-506489號）。 於將°亥種表面朝上保持基板的以送片方式進行電鍍 、"、4置中，因為將電鍍電流更均勻地分布到整個基板 上更加提昇電鍍膜的面内均勻性之同時，基板一般上是 表面朝上的被搬送並施予各種處理，所以無須在電鍍時翻 轉基板。 但疋，在表面朝上（face up)保持基板以進行電鍍的習 知電Ι 士 、 、 ^ ’為了在基板（陰極）與陽極之間經常供給新 鮮=電鍍液以進行電鍍，在基板與陽極之間需要供給大量 的电鍍液以進行電鍍，而有浪費電鍍液的問題存在。 315432 7 200423201 、因此，除了浸潰在陽極而實際上未使用於電鍛的電鐘 液之外，另行將使用在電鑛的新鮮電鍍液，從較接近基板 的位置供給到基板，來供給少量的新鮮電鍍液，而且哼被 供給的新鮮電鍍液被使用在電鍍。但是，即使如上述㈣ 技術，從較接近基板的位置將新鮮電鍍液供給到基板，實 際上，浸潰陽極老化的已使用之舊電鑛液會回過頭來混二 ^新鮮的電鍍液，其結果，形成無法維持管理電鐘特性 _題。 【發明内容】 本發明為有鑑於前述之事實而加以研發者，其第工目 的j提供一種電鍍裳置及電鍵方法，於由電路狀溝渠或穿 孔等所構成的配線用微細凹部内部可選擇性析出銅層等金 屬電鍍膜。 本發明的第2目的，係在提供—種電錢裝置及電鑛方 法’不需加大載重’即可在將整個多孔質體均句地密接在 基板的被電鍍面之狀態下進行電鍍。 v I^明之第3目的，係在提供—種電鍍裝置，即便是 採用面朝上方式的電鐘裝置’也可利用較少量之電鐘液的 供給，而能經常使用新鮮的電鍍液進行電鍍。 本發明之電錄裝置係具有：包含陽極^保持電鍍液的 電鑛液含浸材料及接觸基板表面的多孔f接觸體之電極 頭，接觸基板並加以通電的陰極電極；輕重自如地將前述 電極頭的多孔質接觸體按塵在基板表面的按壓機構；施加 電鐘電壓於前述陽極與前述陰極電極之間的電源；將按壓 315432 200423201 泊id电極頭的夕孔質接觸體於基板表面之狀態，與施加在 河述陽極和前述陰極電極之間的電鍵電麼的狀態互相建立 關連並加以控制之控制部。 祕 、本發明##6就對基板上的冑渠和f孔，優先供給電 鍍液’且優先析出金屬的方法進行精心的研究。其結果， 2現糟由將具有能流通電鍍液的微細貫通孔之多孔質接觸 f與形成晶種層的基板接觸，且令多孔質接觸體與基板的 日日種層之間的接觸狀態變化與電錢用的電壓之施加產生關 連斷、=，而能在溝渠和穿孔内優先地產生金屬析出。 本务明基本上，係在令電極頭的多孔質接觸體與設在 基板表面的晶種層凸部接觸的狀態下進行錢。如上所 述，藉由令多孔質接觸體與晶種層之凸部接觸來進行電 鍍：包含在,鍍液中的具有抑制電鍍效果的添加劑成份(界 面活性物等），會特異性地吸附在與多孔質接觸體接觸的晶 種層凸邛’以抑制電鍍的析出，而在與多孔質接觸體未接 觸的晶種層凹部進行電鍍的析出。 該種現象係於多孔質接觸體與基板的晶種層接觸時 ▼ 该寺的界個在靜止的十主、、兄 的丨月况下％疋地產生，而且多孔質接觸 : 4兩安定性也愈高。又多孔質接觸體本身也在 2疏水性（hydrophobic)材料的情況時，添加劑成份對晶 種層的吸附變多。 之狀：：化精？t施加在陽極與陰極電極之間的電鍍電壓 、文14私壓在多孔質接觸體基板表面的狀離變化 互相產生關連’並反覆地進行短時間的電鍍及供給新的電 315432 9 200423201 鐘液之作法，可維持上述之在晶種層凸部的電鍍析出的抑 制，以及在晶種層凹部的電鍍析出現象，因此可獲得晶種 層凹部優先受到電鍍的理想電鍍舉動。 前述多孔質接觸體，例如係由聚乙烯、聚丙烯、聚醯 胺、聚碳酸酯、聚醯亞胺、碳化矽或礬土所形成。 鈾述電鍍液含浸材料，例如係由陶瓷或多孔質塑膠所 w 形成。 • 前述多孔質接觸體之至少接觸基板表面的面，最好以 絕緣物或絕緣性高的物質所形成。 前述控制部，係最好將前述多孔質接觸體及基板之至 少一方控制成自轉或公轉之方式。 本發明的其他電鍍裝置，係具有：包含保持基板的基 板台、抵接在以前述基板台所保持的基板被電鍍面周邊部 並將該周邊部予以水密性封裝的封裝材料、接觸該基板並 通電的陰極電極之陰極部；上下活動自如地配置在前述陰 •極部上方，並在上下具備陽極與具保水性之多孔質體的電 r極頭；在前述陽極與以前述基板台所保持的基板被電鑛面 之間注入電鍍液的電鍍液注入部；將前述多孔質體以任意 的壓力按壓在由前述基板台所保持的基板被電鍛面，並使 其從該被電鐘面分離的按壓分離機構；施加電鑛電壓於前 述陰極電極與前述陽極之間的電源。 依照本發明，利用任意的壓力按壓多孔質體在由基板 台所保持的基板之被電鐘面，使多孔質體與基板之被電鐘 面的溝渠等之配線用之微細凹部以外的部分（圖案部以外 315432 10 200423201 ^分）之間的間隙儘量變小，而以此狀態進行電鐘的同 ^利用在衣私中將多孔質體從由基板台所保持的基板分 ^ JL更新（替換）多孔質體與基板間之電鐘液，來進行再 =鍍，可在設在基板的配線用之微細凹部之内部有效率地 、擇11析出電鍍膜。而I，藉由任意調整將多孔質體按壓 在基板的被電鍍面之壓力，可以防止基板的被電鍍面或成 膑中的電鍍膜受到來自多孔質體的傷害。 一最好具有使由前述基板台所保持的基板與前述電極 頭成相對移動的相對移動機構。 例如，在電鍍之前’藉由以任意的壓力一邊將多孔質 奴杈壓在由基板台所保持的基板之被電鍍面，一邊使兩者 相對移動’可提高多孔質體與基板的密接性。 前述相對移動機構，例如係由令前述基板台或前述電 極頭之至少一方旋轉的旋轉機構所構成。 〜最好具有轉矩感測器’用以檢測在旋轉前述基板台或 W述電極頭之至少一方時所賦予的旋轉轉矩。 藉由…備上述的轉矩感測器，並透過轉矩感測器檢測 將多孔質體按壓在基板被電鍍面時之壓力，可防止該壓力 受得太大或不夠。 前述按壓分離機構，畏^ 取好具有利用氣壓伸縮地將前述 多孔質體朝前述基板按壓之氣囊。 藉此透過氣囊將多：f丨暂_人 教竹夕孔貝體全面性地更均勻地朝基板 按壓（加壓），可用更均—沾廠+ ^ 1的堡力令其密接在整個基板。 前述氣囊最好為與前述陽極或前述多孔質體接觸，^ 315432 1] 200423201 以水平狀態使該陽極或多孔質靜 匕貝骽上下移動的方式來構成。 前述多孔質體係最好為呈有籍Μ , λ # ~’槓層至少2種以上之多孔 質材料的多層構造。 該多孔質體從材料與構造等觀之，例如主要是由具有 保持電鍍液的仙之電鍍液含浸材料，及設在該電㈣含 浸材料下面的多孔質墊所構成，哕客 |僻取 4夕孔質墊，例如由直接 ν 接觸基板的下層墊，及裝設在該下馬勒也+ ^ 社°袭下層墊與電鍍液含浸材料 馨之間的上層墊所構成。如此，藉由將多孔質體作成多層構 造，例如可使用具有足夠平坦性之能夠使半導體基板上的 凹凸面平坦化之多孔質塾，作為舆基板接觸的多孔質塾(下 層墊）。 ^前述電極頭最好具有用以將前述陽極及前述氣囊收 藏在内部，且區隔形成以前述多孔質體堵塞下端開口部之 陽極室的殼體（housing)。 藉此，透過收藏在陽極室的氣囊，可將多孔質體獨立 • 地往下方按壓。 ^ 前述陽極室例如為具有圓筒形的形狀。 前述殼體係裝設有通連前述氣囊的氣體導入管、將電 鍍液導入於前述陽極室的内部之電鍍液導入管以及供電至 前述陽極之供電口。 月ij述按壓分離機構最好具有使前述殼體上下移動的 氣囊。 藉此，以令電極頭不能朝上下方向移動的固定狀態， 透過氣囊可使區隔形成陽極室的殼體只相對地上下移動。 315432 200423201 △本t月的心佳恶樣，係更具有令前述殼體或前述基板 台朝上下、左右或圓方向振動的加振機構。 藉此’於多孔質體不接觸基板的 透過令殼體或基板台朝上下、左右或 鍍液溶合在設於基板表面（被電鍍面） 層表面。 被電鍍面之狀態下， 圓方向振動，可使電 的晶種層等導電體 以控制前述陽極室内的電 台所保持的基板被電鍍面 最好更具有溫度控制機構， 鍍液、及兩述陽極與由前述基板 之間的電鐘液液溫。 藉此，經常保持電錢中的電鑛液液溫於一定，可防止 因電鑛液的液溫變化，而改變全屬胺μ 又又孟屬膜（電鍍膜）的膜厚與 膜質。 別述基板台之構成，最好係在吸附載置在該基板台上 面的基板周邊部背面並保持基板於水平之同時，能以流體 加壓基板的背面側。 藉此，透過從該基板的背面側以流體加壓由基板台所 保持的基板，而於更水平的狀態維持基板，可使其密接在 多孔質體下面。 本^月的較仏恶樣為具有用以加振由前述基板台所 保持的基板或前述多孔質體之加振機構。 併藉此’例如在電鐘之前，透過以任意的壓力按壓多ί 貝紅於由基板台所保持的基板之被電鍍面，而以超音波〗 加振器等加振基板或多孔質體的至少一方，可更加提昇; 孔質體與基板的密接性。 / 315432 13 200423201 但电毅衷置 ♦货明的另 基板台、抵接在、+、# j 令·包含保持基板的 邊部並將二=通基板台所保持的基板之被電锻面周 板並通封震的封裝材料、接觸該基 述陰極部上方，l 下活動自如.地配置在前 的電極頭·在^十 備陽極與具保水性之多孔質體 電鍍面之門=陽極與以前述基板台所保持的基板之被 以任=二的電鍍液注入部；將前述多孔質體 之按廢機構；施加電鎪電壓於前反被：鍍面 間的電源“以及以任意的"按；！極與1^述陽極之 A,c ^ 〜的&力祕壓别述多孔質體於由前述 :被;ΓΓ的基板被電鑛面時，將存在於前述多孔質體 構。 的間隙之電鍍液予以排除之電鍍液排除機V. In this technique, an attempt is made to increase the flatness by changing the supply amount of the clock liquid by the uneven portion while moving the contact surface horizontally (friction) while touching the porous body while touching the porous body. However, there is a problem that it is difficult to obtain a desired effect due to the aforementioned surface roughness'. Furthermore, due to the surface roughness of the surface of the porous body or the wave-like or anti-reflection that occurs in the porous body when the porous body is pressed against the substrate to be electroplated, it is difficult to smooth the entire porous body. Closely pressed against the plated surface of the substrate, as shown in FIG. 50, 'a porous gap A is generated between the porous body A and the plated surface p of the substrate w, 315432 6 200423201, and the gap s There is a plating solution q, and ions such as Cu2 + contained in the plating solution Q existing in the gap S contribute to the electric clock, causing a problem of non-uniformity in the plane of the recording. Furthermore, by increasing the load for contacting the porous body to crush the space portion of the porous body, the flatness can be improved. However, in that case, a very large load needs to be applied to the substrate. When a soft insulating film such as 10w_kM is used as an object, there is a problem that the insulating film may be damaged, and the surface of the plated film may be easily damaged, such as scratches. It is known to use a plating device for forming such fine high-aspect-ratio wiring plating. The surface (plated surface) is face up and the substrate is held so that the cathode electrode contacts the peripheral portion of the substrate. While the substrate surface is used as the cathode, the anode is disposed above the substrate, and the plating solution is filled between the substrate and the anode, and a plating voltage is applied between the substrate (cathode) and the anode to perform plating on the surface of the substrate (being plated) Technology) (for example, refer to Japanese Patent Publication No. 2002-506489). While the substrate is plated in a sheet feeding manner with the substrate facing upwards, the platen current is centered because the plating current is distributed more evenly over the entire substrate and the in-plane uniformity of the plated film is improved. Generally, the surface is transported upwards and subjected to various treatments, so there is no need to invert the substrate during plating. However, a conventional electrode holding a substrate face up for electroplating is used to supply fresh fresh = electroplating solution for electroplating between the substrate (cathode) and the anode. In between, a large amount of plating solution needs to be supplied for plating, and there is a problem that the plating solution is wasted. 315432 7 200423201 Therefore, in addition to the electric bell liquid that is immersed in the anode and is not actually used for electroforging, a fresh plating solution used in electricity ore is also supplied from a position closer to the substrate to the substrate to supply a small amount Fresh plating solution, and the fresh plating solution supplied is used in electroplating. However, even if the fresh electroplating solution is supplied to the substrate from a position closer to the substrate as described above, in fact, the used electric ore solution that has been immersed in anodic aging will go back and mix the fresh electroplating solution. As a result, a problem that the characteristics of the management clock cannot be maintained is formed. [Summary of the Invention] The present invention has been developed in view of the foregoing facts, and its first purpose is to provide a plating method and an electric key method, which are selectively selectable inside the fine recesses for wiring formed by circuit trenches or perforations. A metal plating film such as a copper layer is deposited. A second object of the present invention is to provide an electric money device and an electric mining method that can perform electroplating in a state where the entire porous body is closely adhered to the plated surface of the substrate without increasing the load. v The third purpose of Ming is to provide an electroplating device. Even a clock device using a face-up method can use a smaller amount of clock liquid supply, and can often use fresh plating solution. plating. The electric recording device of the present invention comprises: an electrode head comprising an anode ore holding electroplating solution impregnating material and a porous f-contact body contacting the surface of the substrate, a cathode electrode contacting the substrate and being energized; Pressing mechanism of the porous contact body according to the dust on the surface of the substrate; applying a clock voltage to the power source between the foregoing anode and the aforementioned cathode electrode; pressing the 315432 200423201 poise id electrode tip on the surface of the substrate A control unit that is related to and controls the state of the electric key between the anode and the cathode electrode. 、、 本 发明 ## 6 The method of preferentially supplying the plating solution 'and precipitating the metal to the trenches and f-holes on the substrate is carefully studied. As a result, two problems are caused by contacting the porous contact f having fine through holes through which the plating solution can flow with the substrate forming the seed layer, and changing the contact state between the porous contact body and the daily seed layer of the substrate. It is connected with the application of voltage for electric money, and can cause metal precipitation in trenches and perforations preferentially. Basically, the operation is performed in a state where the porous contact body of the electrode tip is brought into contact with the convex portion of the seed layer provided on the substrate surface. As mentioned above, electroplating is performed by bringing the porous contact body into contact with the convex portion of the seed layer: the additive components (interfacial active materials, etc.) contained in the plating solution, which inhibit the plating effect, are specifically adsorbed on The seed layer which is in contact with the porous contact body is convex to prevent precipitation of the plating, and the plating layer is deposited in the recessed portion of the seed layer which is not in contact with the porous contact body. This phenomenon is caused when the porous contact body is in contact with the seed layer of the substrate. ▼ The temple boundary is produced in a steady state under the condition of the stationary ten masters and brothers, and the porous contact: 4 two stability Also higher. When the porous contact body itself is also a hydrophobic material, the additive component adsorbs more on the seed layer. State :: Sperm? tThe plating voltage applied between the anode and cathode electrodes and the pressure change on the surface of the porous contact substrate are related to each other, and the plating is repeated for a short period of time and new electricity is supplied 315432 9 200423201 clock liquid In this way, the above-mentioned suppression of plating precipitation on the convex portion of the seed layer and the appearance of plating precipitation on the concave portion of the seed layer can be maintained, so that the ideal plating behavior of the concave portion of the seed layer can be preferentially plated. The porous contact body is formed of, for example, polyethylene, polypropylene, polyamide, polycarbonate, polyimide, silicon carbide, or alumina. Uranium plating bath impregnating materials are formed, for example, from ceramics or porous plastics. • The surface of the porous contact body that contacts at least the substrate surface is preferably formed of an insulator or a highly insulating substance. The control unit is preferably a system that controls at least one of the porous contact body and the substrate to rotate or revolve. Another electroplating device according to the present invention includes a substrate stage including a holding substrate, a sealing material abutting on a peripheral portion of a plated surface of the substrate held by the substrate stage, and encapsulating the peripheral portion in a watertight manner, contacting the substrate and energizing the substrate. The cathode part of the cathode electrode; the upper and lower sides are freely arranged above the cathode and electrode part, and the anode and the water-retaining porous body are provided on the upper and lower sides; the anode and the substrate held by the substrate stage are An electroplating solution injection section for injecting a plating solution between the electric ore surfaces; pressing the porous body against the substrate to be forged on the substrate held by the substrate table at an arbitrary pressure, and separating it from the pressing surface separated from the surface to be clocked Mechanism; a power source that applies a power ore voltage between the aforementioned cathode electrode and the aforementioned anode. According to the present invention, the porous body is pressed against the electric clock face of the substrate held by the substrate stage with an arbitrary pressure, and the portion other than the fine recesses (patterns) for wiring the porous body and the trenches of the electric clock face of the substrate (pattern) 315432 10 200423201 ^ min) as small as possible, and the electric clock is used in this state ^ use of clothing to separate the porous body from the substrate held by the substrate table ^ JL update (replace) porous The electric clock liquid between the substrate and the substrate is used for re-plating, and the plating film can be efficiently deposited in the inside of the fine recessed portion for wiring of the substrate. On the other hand, by arbitrarily adjusting the pressure of pressing the porous body against the plated surface of the substrate, the plated surface of the substrate or the plated film in the formation can be prevented from being damaged by the porous body. It is preferable to have a relative movement mechanism for relatively moving the substrate held by the substrate stage and the electrode tip. For example, prior to plating, 'the porous body and the substrate are moved relative to each other while pressing the porous slave branch against the plated surface of the substrate held by the substrate stage at an arbitrary pressure', thereby improving the adhesion between the porous body and the substrate. The relative movement mechanism is constituted by, for example, a rotation mechanism that rotates at least one of the substrate stage or the electrode head. ~ It is preferable to have a torque sensor 'for detecting a rotation torque imparted when at least one of the substrate stage or the electrode tip is rotated. By preparing the above-mentioned torque sensor and detecting the pressure when the porous body is pressed against the plated surface of the substrate through the torque sensor, it is possible to prevent the pressure from being excessively large or insufficient. The pressing / separating mechanism may be provided with an airbag which presses the porous body toward the substrate by telescopically using air pressure. Through this, the airbag will be used to hold more: f 丨 Temporary_People's Education Bamboo Xi Kongbei body pressed more uniformly (pressurized) towards the substrate, you can use more even-dip factory + ^ 1 fortification to make it close to the entire substrate . The airbag is preferably configured to be in contact with the anode or the porous body. ^ 315432 1] 200423201 The anode or the porous static dipper 移动 is moved up and down in a horizontal state. The porous system is preferably a multilayer structure having a porous material of at least two kinds of λ, λ # ~ 'bars. From the perspective of materials and structures, the porous body is mainly composed of an electroplating solution impregnating material having an electroplating solution to hold the electroplating solution, and a porous pad provided under the electric impregnation material. The porous pad is composed of, for example, a lower pad that directly contacts the substrate, and an upper pad that is installed between the lower Mahler and the lower pad and the plating solution impregnating material Xin. In this way, by forming the porous body into a multi-layer structure, for example, a porous gadolinium having sufficient flatness and capable of flattening the uneven surface on a semiconductor substrate can be used as the porous gallium (substrate pad) in contact with the substrate. ^ The electrode tip preferably has a housing for storing the anode and the bladder inside and forming an anode chamber that blocks a lower end opening with the porous body. This allows the porous body to be pushed down independently • by the airbag stored in the anode chamber. ^ The aforementioned anode chamber has a cylindrical shape, for example. The casing is provided with a gas introduction tube that communicates with the bladder, a plating solution introduction tube that introduces an electroplating solution into the anode chamber, and a power supply port for supplying power to the anode. The press release mechanism described above preferably has an airbag for moving the housing up and down. Thereby, in a fixed state in which the electrode tip cannot be moved in the up-down direction, the case that forms the anode chamber can be relatively moved only up and down through the airbag. 315432 200423201 △ The good and bad feelings of this month are more equipped with a vibration-enhancing mechanism that vibrates the casing or the substrate table in the vertical, horizontal, or circular direction. In this way, when the porous body does not contact the substrate, the casing or substrate table faces up and down, left and right, or the plating solution is fused on the surface of the layer provided on the surface of the substrate (the surface to be plated). In the state of the plated surface, the vibration in the circular direction enables the electric seed layer and other conductors to control the substrate held by the radio in the anode chamber. The plated surface preferably has a temperature control mechanism, a plating solution, and two anodes. And the liquid temperature of the electric clock between the substrate. In this way, the temperature of the electric ore liquid in the electric money is always kept constant, which can prevent the change in the liquid temperature of the electric ore liquid to change the film thickness and film quality of all amine μ and mongolian films (plating films). Regarding the configuration of the substrate stage, it is preferable that the rear surface side of the substrate can be pressurized with a fluid while the substrate is adsorbed and placed on the substrate stage, and the substrate is held horizontally. Thereby, the substrate held by the substrate stage is pressurized with fluid from the rear surface side of the substrate, and the substrate is maintained in a more horizontal state, so that the substrate can be brought into close contact with the porous body. A more serious example this month is a vibration-enhancing mechanism provided to vibrate the substrate held by the substrate stage or the porous body. And by this, for example, before pressing an electric clock, press at least one red bead on the plated surface of the substrate held by the substrate stage, and at least the substrate or the porous body is vibrated with an ultrasonic wave vibrator or the like. On one side, it can be further improved; the tightness between the porous body and the substrate. / 315432 13 200423201 However, DJI insists on the purchase of another substrate table, abutting on, +, # j, and order. It includes an electrically forged surface perimeter plate that includes the edge portion of the substrate and will hold the substrate held by the substrate table The sealing material that passes through the shock, contacts the cathode part above the base, and can move freely. The electrode head that is arranged in front of the ground. At the gate of the anode and the porous body with water retention, the gate = anode and the aforementioned The substrate holder held by the substrate table is provided with a plating solution injection unit of two; the pressing mechanism of the porous body is applied; the electric voltage is applied in front of the substrate: the power supply between the plating surfaces, and the " ！ The pole and the anode A, c ^ ~ of the & force secreted porous body will exist in the porous body structure when the substrate: Electroplating solution removing machine

艮據本發明，於以任意的壓力將多孔質體按壓於由基 反口所保持的基板之被電鍍面時，藉由排除存在於多孔質 體與被電㈣之間㈣隙之錢液，無須加大載重，即能 夠以將整個多孔質體均句地密接在基板被電鍍面的狀態下 進行電鑛。 ,本1明的較佳悲樣之前述電鍍液排除機構，係由使以 則述基板台所保持的基板、前述多孔質體，以及注入到前 、，、陽極14以别述基板台所保持的基板之被電錢面之間的電 鍍液中的至少2個產生相對運動之機構所構成。 例如，在以任意的壓力按壓多孔質體於以基板台所保 持的基板之被電鍍面之前後，藉由相對地旋轉由基板台所 315432 14 200423201 2持的基板與多孔質體，可將存在於多孔質體與基板之被 電鍍面之間的間隙之電鍍液，以伴隨該旋轉的離心力排除 到外面。 本發明的較佳態樣之前 w述基板台所保持的基板、 述陽極與以前述基板台所保 錢液中的至少丨個產生振動 述電鍍液排除機構，係由使以 前述多孔質體，以及注入到前 持的基板之被電鑛面之間的電 之機構所構成。 U 士 藉由使用振動裔使以基板台所保持的基板與多 孔質體振動’可順利地排除存在於多孔質體與基板之被電 鍍面之間的間隙之電鍍液。 1、本發明的較佳態樣之前述電鍍液排除機構，係由將以 刖，基板台所保持的基板、前述多孔質體，以及注入到前 迟陽極_以别述基板台所保持的基板被電鍍面之間的電鍍 夜中的至v “固’朝垂直於由基板台所保持的基板之被電 鍍面方向產生振動之機構所構成。 如此’猎由對基板被雷妙 电錄面朝垂直方向振動，來使多 孔質體與基板之被電鑛面 观囬立相不會滑接的方式，可防止傷 及電錢表面。 ’例如有使用超音波者，或使用 如此，透過利用超音波可帶來高 前述產生振動的機構 利用激磁線圈的加振機。 頻振動。 前述產生振動的機槿，也丨^ , p 械稱例如由壓電振動器構成。如According to the present invention, when the porous body is pressed against the plated surface of the substrate held by the base port with an arbitrary pressure, by removing the liquid that exists in the gap between the porous body and the substrate, It is not necessary to increase the load, that is, the electric ore can be carried out in a state where the entire porous body is closely adhered to the plated surface of the substrate. The above-mentioned preferred solution for removing the plating solution of the present invention is the substrate held by the substrate stage, the porous body, and the substrate held by the anode 14 and the anode 14 by a substrate stage other than the substrate stage. It is constituted by at least two of the electroplating solution between the electric money surfaces to generate relative movement. For example, before pressing a porous body against an electroplated surface of a substrate held by a substrate stage under an arbitrary pressure, the substrate and the porous body held by the substrate stage 315432 14 200423201 2 can be relatively rotated to exist in the porous body. The plating solution in the gap between the mass and the plated surface of the substrate is removed to the outside by the centrifugal force accompanying the rotation. According to a preferred aspect of the present invention, at least one of the substrate held by the substrate stage, the anode, and the liquid retained by the substrate stage generates vibration, and the plating solution removing mechanism is caused by the porous body and injection. The electricity mechanism between the electric substrate and the front substrate is constructed. U By using a vibrating system to vibrate the substrate held by the substrate stage and the porous body, the plating solution existing in the gap between the porous body and the plated surface of the substrate can be smoothly eliminated. 1. In the preferred aspect of the present invention, the aforementioned plating solution removing mechanism is a method in which the substrate held by the substrate, the porous body, and the porous body are injected into the front anode. The substrate held by the substrate stage is electroplated. In the electroplating between the surfaces, the "solid" vibration is formed by a mechanism perpendicular to the direction of the plated surface of the substrate held by the substrate table. In this way, the hunting is caused by the vertical vibration of the substrate by the Lei Miao recording surface, In this way, the porous body and the substrate will not slip against each other, preventing damage to the surface of the money. 'For example, those who use ultrasound, or use it, can bring The aforementioned mechanism for generating vibration uses an exciter of an exciting coil. Frequency vibration. The aforementioned mechanism for generating vibration is also called a piezoelectric vibrator, such as a piezoelectric vibrator.

藉由使用壓電振動器，可 、 」運成機構的小型化。 前述產生振動的機構，沐 才可為利用塵力振動者。如此 315432 15 200423201 利用壓力振動，主要可振動電錢液。 别述電鍍液排除機構，最好具有於内部收納前述陽極 並以前述多孔質體堵塞開口端部的陽極室，及控制該陽極 室内壓力的壓力控制部。 藉此，透過使陽極室内的壓力形成比大氣壓更低的壓 力（負M) ’吸引存在於多孔質體與基板之被電錄面之間的 j隙之電鍍,夜可促進電鍍液流過多孔質體之内部並流入 •陽極室内，而從間隙排除電鍍液。 本發明之再另一電鍍裝置’係具有：包含保持基板的 f板台、抵接在以前述基板台所保持的基板之被電鍍面周 邊部並將該周邊部予以水純封裝的封裝材料、接觸該基 板並通電的陰極電極之陰極部；上下活動自如地配置在前 述陰極部上方，並在上下具備陽極與具保水性多孔質 電極頭；在前述陽極盥 、旦、 鐘面之間注入電鍍液二= 持的基板之被電 •述陰極電極鱼前= 施加電鑛電壓於前 「 〜％極之間的電源；而前述多孔質體係具 , 夕貝_ 2種以上多孔質材料的多層構造。 内部： = =’藉由預先在具有多層構造的多孔質體之 2:保==鍍液，並在電鍍前透過多孔質體供給至 " α視陽極的電鍍液混入供給至该美板的 電錢液，藉由供給較少量的電鍍液，可進行”使用料 電鍍液的電鍍。 丁、，、工吊使用新,，、羊 部 前述電極頭， 並區隔形成以 最^好為具有殼體而將 前述多孔質體堵塞下 河述陽極收納在内 端開口部之陽極 315432 室。 藉此’將陽極室 下端開口部而形成保持有電鍍液的多孔質體堵塞 部，透過解除陽極室 2以將電鍍液保持於陽極室内 在多孔質體内部的新，或加壓陽極室内’可將保持 潰過陽極的電錢液、、θ 1保持在陽極室内，以防止浸 义+ ± 叱入，同時供給至基板。 丽述设體，最好兔^ 之電鑛液吸引管、暮有吸引前述陽極室内部的電鍍液 流體導入管，及佴恭入：壓流體於前述陽極室内部的加壓 ^ ”书給前述陽極的供電口。 奸 ;將夕孔質體浸潰在新鮮電鍍液的狀皞ητ泰 過吸引陽極室内的電舻、、广 予-鍍液的狀恶下，透 的陽極之舊電铲、、夜又/文，一也吸引去除浸潰於陽極室内 質體内部，It —邊導人並保持新鮮的電㈣於多孔 孔質脚内邱 以加壓流體加壓陽極室内，可將保持在多 貝2部的新鮮電鍍液，透過多孔質體供給至基板。 在構成前述多；播、生4夕 成！個空間。 的多孔質材料之間’最好至少形 彤成：t例如透過在構成多層構造的多孔質材料之間所 二：Γ事先保持新鮮的電艘液，將保持在該空間内 ::::及保持在位於該空間下方之多孔質材料内部 、·又 保持在陽極室内以防止混入浸潰於陽;M f ^ 液，同眛板从 匕八/又/貝万、險極的電鍍 、/、、心至基板並可使用在電鍍。 本發明的較佳態樣’係具有朝形成在前述多材 (〇] gq (Λ? Bb . ^ u ·<^ 並供給電鍍液的電鑛液供給部，以及吸引並 排出前述空間内的電鍍液之電鍍液排出部。 、’ 315432 17 稭此 ， —By using a piezoelectric vibrator, the size of the mechanism can be reduced. The aforementioned mechanism that generates vibrations can be a person who uses dust to vibrate. In this way, 315432 15 200423201 uses pressure vibration, which can mainly vibrate electric money fluid. The electroplating solution removing mechanism preferably includes an anode chamber that houses the anode therein and blocks the open end with the porous body, and a pressure control unit that controls the pressure in the anode chamber. Thereby, by forming the pressure in the anode chamber to be lower than the atmospheric pressure (negative M), the electroplating of the j-gap existing between the porous body and the recorded surface of the substrate is attracted, and the plating solution can be promoted to flow through the porous body. The inside of the mass flows into the anode chamber, and the plating solution is excluded from the gap. Still another electroplating apparatus according to the present invention includes an f-plate stage holding a substrate, a packaging material contacting a peripheral portion of a plated surface of the substrate held by the substrate stage, and encapsulating the peripheral portion in a pure water, and contacting the substrate. The cathode part of the cathode electrode on which the substrate is energized; the upper and lower parts are freely arranged above the cathode part, and the anode and the water-retaining porous electrode head are provided on the upper and lower parts; and a plating solution is injected between the anode toilet, the denim, and the clock face. = The substrate is held by the electrode • The cathode electrode is in front of the fish = The power source is applied with the power voltage between the front and the ~% electrode; and the aforementioned porous system has a multilayer structure of 2 or more porous materials. Internal : == 'By the porous body having a multi-layer structure in advance 2: guarantee == plating solution, and the plating solution supplied to the anode through the porous body before plating is mixed with the electricity supplied to the board By using a small amount of plating solution, the "liquid solution" can be used to perform "plating" using a plating solution. Ding, Ding, and Ding use the new electrode heads of the Yang and Yang sections, and separate and form the anode 315432 room, which has the housing with the porous body plugged under the porous body. . Thereby, the opening of the lower end of the anode chamber is formed into a porous body plugging portion holding the plating solution, and the anode solution 2 is released to hold the plating solution in the anode chamber inside the porous body, or the anode chamber is pressurized. The electrolyte solution, θ1, which has been kept past the anode, is held in the anode chamber to prevent immersion + ± intrusion, and is supplied to the substrate at the same time. For the description of the body, it is best to use the electric mineral fluid suction tube of the rabbit ^, the electroplating liquid fluid introduction tube that attracts the inside of the anode chamber, and 佴 respectfully: pressurize the fluid inside the anode chamber ^ "book to the aforementioned The anode's power supply port. The pores are immersed in a fresh electroplating solution. Ητ Thai attracts the electricity in the anode chamber, and the wide-spreading solution is like the old electric shovel. , Ye You / Wen, one also attracts and removes the immersion inside the anode body plastid body, It — It guides and keeps fresh electricity in the porous pores, and pressurizes the anode room with pressurized fluid to keep it in the anode room. The fresh electroplating solution of the two parts of Dobe is supplied to the substrate through the porous body. It is preferable that at least the formation of the space between the porous material and the above-mentioned structure; The second between the porous materials constituting the multilayer structure: Γ keeps fresh electric boat fluid in advance and will keep it in the space :::: and inside the porous material below the space, and in the anode chamber In order to prevent immersion in the sun; M f ^ solution, the same as the plate from Dagger / / / Bewan, dangerous electrodeposition, / ,, heart to the substrate and can be used in electroplating. A preferred aspect of the present invention is a system formed in the aforementioned multi-material (0) gq (Λ? Bb. ^ u < ^ An electro-mineral liquid supply unit that supplies a plating solution, and a plating solution discharge unit that attracts and discharges the plating solution in the aforementioned space. "315432 17 This,-

邊從形成在多孔質材之M A # " 、 4的二間内的電鍍液 /、、、、a。卩供給新鮮的電鑛液，一邊透 处^冤鍍液供給部從該空 間抽取電鍍液，因而可替換空間内的新鮮電鍍液。 本發明的電鍍方法，係準備呈右ώ曰 „ ^ 有由晶種層所覆蓋的配 、、杲用倣細凹部之基板，且在前述晶 ... 裡層的表面與和該晶種 ^者職的間隔所配置的陽極之間透過多孔質接觸體供 、、、口电鍍液，於在前述晶種層與前述陽^ ^ ^ ^ ^ <間施加電鏟電壓 =電鍍時，使施加在前述晶種層與前述陽極之間的電鍵 壓之狀態變化’與前述多孔質接觸體與前述晶種層之間 的按壓狀態變化形成相互關連。 该電鍍方法之特徵，係於基板上的晶種層與陽極之 Z ’透過多孔質接觸體—邊供給電鏟液，—邊將施加在晶 層與陽極之間的電鍍電|狀態，與多孔質接觸體和晶種 層之間的按壓狀態產生關連'及變化而進行電鍍。 該多孔質接觸體需要具有可通過電鍍液：微細貫通 孔’而且為了不使該多孔質接觸體本身析出電Μ，與多孔 貝接觸體之至少晶種声&垃 ^ ^ ^ 0曰禋層的接觸面，需要由絕緣物或絕緣性 鬲的物質來形成。 再者，為了要以多孔質接觸體緊壓基板的平坦面（形成 配線形狀的溝渠及/或穿孔的部分），且使電鍍儘可能不要 析出到該基板的平坦面’多孔f接觸體最好為具有某種程 ，硬度的物質。而且與多孔質接觸體之晶種層之接觸面， 最好是平坦性佳者以能取得較大的與晶種層表面接觸的面 積’為了充分發揮後述之添加劑的效果，多孔質接觸體材 315432 18 料最好是疏水性。 施加於本發明$带#女4 α。 月 < 私艘方法的晶種層與陽極之間的電 鑛電壓之狀態變化，可|與ψ 了列舉出有轭加在多孔質接觸體與晶 :層之間的電鍍電壓之斷續(施加矩形電壓)、施加在多孔 ^ θ 2間的電鍍電壓之增減（反覆高電壓與 低電壓）等。而且施加在多孔質接觸體與晶種層之間的電鑛 。[之方纟/亦可施加單純的直流，也可施加由複數脈衝 構成的脈衝群，更可施加正弦波。 再者夕孔貝接觸體對晶種層的按壓狀態之變化，可 列舉有從晶種層與多孔質接觸體的接觸到非接觸的變化， ：種層/、夕孔貝接觸體的接觸時之壓力從相對性高壓 往相對性低壓變化等。 施加在該等晶種層與陽極之間的電鐘電壓的狀態變 化，與多孔質接觸體和晶種層之間的按壓狀態的變化，互 相建立關連以進行電料方法態樣中，刊舉出以下的態 ^ _〜樣為夕孔質接觸體和晶種層之間的按壓狀 態的變化，係多孔皙描^緬 、接觸體的與日日種層之接觸、非接觸， 方也加在日日種層與陽極之間的 心间的電鍍电壓的狀態變化，係屬於 斷續地施加電鍍電麼。 在此恐樣中’例如於多孔質接觸體與晶種層接觸時 施加電鏟電Μ於晶種層與陽極之間以進行電鍍，而於多 諸觸體與晶種層非接觸時，不施加電錄電壓於晶種層 陽極之間’可停止電鍍並供給新鮮的電鍍液至晶種層與 315432 19 200423201 孔質接觸體之間。 ::多孔質接觸體與晶種層之接觸、非接觸，及晶種層 ^之間的斷續施加電㈣壓，係可同步進行，但亦可 晶種層與陽極之間的電鍍電壓之時序，比多孔質 =契晶種層接觸時略延遲。在此態樣下 馨 f f電壓於晶種層與陽極之間的狀態下，例如也可使多孔質 妾觸體與基板（晶種層）作旋轉或移動運動 =壓的施加時序之情況時，多孔質接觸體與晶在種二: 地 起但於不施加電鐘電壓於晶種層與陽極之間的狀 怨下’由於透過令基板或多孔質接觸體旋轉、朝上下或左 a向運動可使電鍍液溶入晶種層表面，因此較為理想。 又令電鍍液混人該種晶種層表面之運動例中，可列舉出反 覆接觸與非接觸的運動、反覆增強減弱按壓壓力的運動， 及在輕按壓的狀態旋轉基板的運動等。 %第2種^、樣為多孔質接觸體與晶種層之間的按壓狀態 之變化，係多孔質接觸體對晶種層之壓力的強弱變化，施 力:在晶種層與陽極之間的電鍍電壓之狀態變化，可列舉斷 續施加電鍍電壓的情況。 、“樣中例如於多孔質接觸體與晶種層之間的壓 力相對較高時，施加電鍍電壓於晶種層與陽極之間進行電 鍍’而於降低多孔質接觸體與晶種層之間的壓力，為相對 性低壓時，不施加電鍍電壓於晶種層與陽極之間，可停止 電鑛並供給新鮮的電鍍液於曰曰曰種層與多⑶質接觸體之間。 在該態樣中，於停止施加電鍍電壓時也可進行多孔質 315432 20 200423201 接觸體與基板之旋轉、移動或振動運動，並使電鍍液溶入 晶種層表面。 第3種態樣為，多孔質接觸體與晶種層之間的按壓狀 態的變化係屬多孔質接觸體對晶種層的壓力強弱變化，施 加在晶種層與陽極之間的電鍵電壓之狀態變化，可列舉施 加的電鍍電壓之強弱變化的情況。 在此態樣中，例如於多孔質接觸體與晶種層之間的壓 力較高時，施加相對性高電鐘電壓以進行钱，而於降低 多孔質接觸體與晶種層之間的壓力而成為低壓日夺，施加相 對性較低魏電壓於晶種層與陽極之間，可於施加低電錄 電壓時供給在施加高㈣電壓時所消的電鐘液。 ‘又於使施加在晶種層肖陽極之間％電鑛電壓之狀態 化’與多孔質接觸體對晶種層之按遂狀態的變化互相建 立關連而進行電鑛時，例如可將電鑛電壓的施加時間 =間的間隔設為也可加以變化。再者，電鏟時的 電壓與電流可將其中任一方Μ 為一疋，也可令兩者緩慢地 、义。又於電鍍的最初之時間點，可以定電壓進行 鍍，也可在之後以定電壓進行電鍍。 在本1月的讀方法巾，於施加在晶種層與陽極 的笔_狀態，肖多孔質接猶 態相互建立關連以進行帝护夕义女叮 運仃电鍍之則，亦可用一般性的方法於 基板的晶種層進行薄全屬命 、 -夫接縮曰㈣ 亦可於多孔質接觸 月豆禾接觸晶種層的妝能 幻狀恶下進行短時間的電鍍之後， 質接觸體接觸晶種； 屬而使知加電鍍電壓在晶種層與陽極 315432 21 200423201 之間的狀態，與多孔質接 互建立關連以進行電鐘。l 層之間的按隸態相 不太：:力ΐ:!所用的電鍍液並沒有特別限制，雖可為 双3添加劑的電鍍液，但 加劑的電鍍液。尤1是 木用了高疏水性添 鍍液作為電鍍液時：：：：用硫酸銅電鍍液等的酸性銅電 i平劑成份的添加劑，尤農 載版成伤及 之添加劑。 4& 4勿成份及载體成份為必須 本’X明的其他電鍍方法，係準備具 的配線用微細凹部之λ招，B ” 田曰曰種層所覆羞 AA 卩之基板，且在前述晶種層的表面蛊p基 =疋的間隔所配置的陽極之間配置具有保水性的多ϋ者 二=前；晶種層與前述陽極之間一邊充滿電鍍液1 丁電鍍時，以任意的壓力一邊將前述多孔質體二 日曰種層’一邊於前述晶種層與前述陽 文 通電以從事電鍍。 间進行 本♦明的較佳態樣，為於通電前述晶種層與前 之間以進行電鑛之前，-邊以任意的壓力按壓前述= 體與珂述晶種層，一邊令其等相對移動。 貝 、η本發明的較佳態樣，為於製程中解除前述晶種層與^ 述陽極之間的通電，使前述多孔質體離開前述晶種層。、別 藉此，於製程中可更新（替換）多孔質體與晶種層 的電鍍液。 3 —本發明之另一其他電鍍方法，係準備具有由晶種層 覆盍的配線用微細凹部之基板，且在前述晶種層的表面與 315432 22 丄 隔著預定的間隔所配置的陽極 曾，1 4配置具有保水性的多孔 貝體，而於前述晶種層與前述 二的夕孔 邊通電以進行電鍍時，以任音的父“充滿電鍍液-於前述晶種芦之A1价收:土力將耵述多孔質體按壓 之間的電心： 於前述多孔質體與晶種層 ]的電銀液排除之後，通雷 以進行電鍍。 述日日種層與前述陽極之間 本發明的較佳態樣，係僅在 層接觸時進行通電。 貝一月j述日日種 本發明的基板處理裝置，係且 ±η ^ Π ,, 糸/、有·搬進搬出基板的裝 yi〇adunl〇adstation);申請專利範圍第1項乃至第33 :一項的電鑛褒置；洗淨並乾燥基板的洗淨乾燥裝 置，以及運送基板於前述妒知A 、， ， 卸D、珂述電鍍裝置及前述洗 淨乾餘波置之間的運送裝置。 最好更具有研磨裝置，以研磨去除以前述電鍍裝置成 胰在基板表面的不要之金屬膜並使之平坦化。 最好更具有熱處理裝置，以對利用前述電鑛裝置成膜 有金屬膜的基板進行熱處理。 藉此，於利用研磨裝置研磨去除不要的金屬膜之前， 透過對基板進行熱處理(退火處理），可在之後的以研磨裝 置進打不要之金屬膜的研磨去除處理，以及對於配線的電 氣特性具有良好之效果。 最好更具有斜面钮刻裝置，以姓刻去除附著且成膜加 工在基板周邊部的金屬膜。 藉此，例如於基板表面成膜填埋用之金屬膜，並以洗 315432 23 200423201 淨裝置洗淨之後，立即可用斜面姓刻裝置餘刻成膜在基板 斜面部的金屬膜。 ^最子更八有監視部，以監視施加電鍍電壓於前述電鍍 裝置的前述陽極與前述陰極電極之間時的電壓值或電流值 的至少一方。 # •藉此禾J用&視部檢測電鍍裝置的電鑛終點㈣d point)，可進行回授並結束電鑛。 最好更具有膜厚測試器’以測試成膜在基板表面的金 屬膜之膜厚。 糟此，透過測試基板表面的金屬膜之膜厚，回授測試 結果並依所需增減電鍍時間， / 之金屬膜。 重現性佳地形成預定膜厚 【實施方式】 ’參照圖式說明本發明之實施形態。該實施形態 係例不在設於半導體晶圓等基板表面的配線用之微細凹 部’利用電鑛填埋作為配線材 配後。㈣之銅以形成由銅層構成的 線田然亦可使用其他的配線材料。 參照第1A圖至第彳d同 >、n , …， 弟1D目，况明半導體裝置的銅配線 形成例。如第1A圖所示’在形成有半導體元件的 ίΠΓ電層ia"，堆積例如由⑽2組成的氧化膜 :二。二IS之絕緣膜㈣絕緣膜)2,在該絕緣膜2内 口P例如利用微影、蝕刻技術， 取牙孔3與溝渠4以作為 配線用之微細凹部，在其上利 J用歲鐵寺形成由TaN等構成 的阻障層5,另在其上利用濺 年構成 欠观寻Φ成作為電解電鍍的供 315432 24 200423201 電層之晶種層6。 然後如第1B圖所示，利用在基板W之表面實施銅電 鑛’將銅充填在基板W的穿孔3及溝渠4内之同時，堆積 銅層7在絕緣膜2上。之後，透過化學機械研磨（CMp)等 去除絕緣膜2上的阻障層5、晶種層6及銅層7，使充填在 穿孔3及溝渠4内的銅層7之表面與絕緣膜2的表面大致 成為同一平面。藉此，如第1C圖所示，在絕緣膜2的内 邛形成由晶種層6及銅層7所構成的配線（銅配線）8。 其次，如第1D圖所示，在基板冒表面實施無電解電 鍍，於配線8的表面選擇性地形成由c〇合金或恥合金等 構成的保護膜9，藉此，以保護膜9覆蓋保護配線8的表 面。 弟2圖係顯示具備本發明實施形態之電鑛裝置的基板 處理裝置之俯視圖。如第2圖所示，該基板處理裳置，例 如具備有矩形狀的裝置框12，其可自由裝卸於史密夫箱等 内。p收納有多數個半導體晶圓等基板的搬運箱μ。在該裝 置框12的内部具備有··梦. "The edges are formed from the electroplating solution / ,,,, a in the two rooms of the M A # ", 4 of the porous material. (2) Supply fresh electric ore solution, and the plating solution supply part draws plating solution from the space while passing through. Therefore, the fresh plating solution in the space can be replaced. The electroplating method of the present invention is to prepare a substrate with imitation fine recesses covered by a seed layer, and a thin concave portion, and the surface of the inner layer and the seed seed ^ The anodes arranged at the interval between the anodes and the anodes are provided with a porous plating solution through a porous contact body, and a shovel voltage is applied between the seed layer and the anode ^ ^ ^ ^ ^ < The change in the state of the electrical bonding pressure between the seed layer and the anode is related to the change in the pressing state between the porous contact body and the seed layer. A feature of the plating method is that the crystal is on a substrate. The Z 'of the seed layer and the anode passes through the porous contact body—while supplying the electric shovel fluid—while applying the electroplating electrical state between the crystal layer and the anode, and the pressed state between the porous contact body and the seed layer The porous contact body needs to have electroplating solution and change. The porous contact body needs to have a plating solution: fine through-holes, and in order to prevent the porous contact body from precipitating electricity, at least the seed sound of the porous shell contact body & ^ ^ ^ 0 The contact surface needs to be formed of an insulator or an insulating material. In addition, in order to press the flat surface of the substrate (the grooves and / or perforations forming a wiring shape) with a porous contact body, and make the plating Possibly not to be deposited on the flat surface of the substrate. The porous f-contact is preferably a substance having a certain range and hardness. The contact surface with the seed layer of the porous contact is preferably flat to obtain A larger area of contact with the surface of the seed layer 'In order to give full play to the effects of the additives described later, the porous contact body 315432 18 is preferably hydrophobic. Applied to the present invention $ 带 # 女 4 α. Month < Private The state change of the electrical voltage between the seed layer and the anode of the ship method can be used to illustrate the discontinuity of the plating voltage (a rectangular voltage is applied) between the porous contact body and the crystal: layer with a yoke. , Increase and decrease of the plating voltage applied between the porous ^ θ 2 (repeated high voltage and low voltage), etc., and the electric ore applied between the porous contact body and the seed layer. [之 方 纟 / You can also apply simple DC can also be applied by complex numbers A pulse group composed of pulses can further apply a sine wave. In addition, the change of the pressing state of the seed layer by the Xikongbei contact body can be exemplified by the change from the contact of the seed layer and the porous contact body to the non-contact,: The pressure of the seed layer /, Xikongbei contact body changes from relative high pressure to relative low pressure, etc. The state of the clock voltage applied between the seed layer and the anode changes, and the contact with the porous contact body and Changes in the pressing state between the seed layers, which are related to each other to perform the electrical material method. The following states are listed ^ _ ~ The following is the change in the pressing state between the porous contact body and the seed layer. This is a description of the state of the electroplating voltage on the contact between the contacting body and the Japanese-Japanese seed layer, and the non-contact, and also the intermittent change of the plating voltage between the Japanese-Japanese seed layer and the anode. Electricity. In this case, for example, when a porous contact body is in contact with the seed layer, an electric shovel is applied between the seed layer and the anode for electroplating, and when many contacts are not in contact with the seed layer, Applying a recording voltage between the anode of the seed layer 'can stop the plating and supply fresh plating solution between the seed layer and the 315432 19 200423201 porous contact body. :: The contact and non-contact between the porous contact body and the seed layer, and the intermittent application of electrical pressure between the seed layer ^ can be performed simultaneously, but the plating voltage between the seed layer and the anode can also be The timing is slightly delayed compared to the contact time when the porous = seed crystal layer is in contact. In this state, when the voltage between the seed layer and the anode is in the state, for example, when the porous contact body and the substrate (seed layer) can be rotated or moved, the pressure is applied, The porous contact body and the crystal are in the second kind: from the ground but without applying a clock voltage between the seed layer and the anode. 'Because the substrate or the porous contact body rotates, moves up, down, or to the left a through transmission It is preferable to dissolve the plating solution on the surface of the seed layer. Examples of movements in which the plating solution is mixed on the surface of the seed layer include repeated contact and non-contact movements, repeated enhancements to weaken the pressing pressure, and rotation of the substrate in a lightly pressed state. % The second kind is the change of the pressing state between the porous contact body and the seed layer, which is the change in the pressure of the porous contact body on the seed layer. The force is applied between the seed layer and the anode. Changes in the state of the plating voltage include the case where the plating voltage is intermittently applied. "In the sample, for example, when the pressure between the porous contact body and the seed layer is relatively high, a plating voltage is applied between the seed layer and the anode to perform electroplating 'to reduce the pressure between the porous contact body and the seed layer. When the pressure is relatively low, no electroplating voltage is applied between the seed layer and the anode, and the power ore can be stopped and a fresh plating solution can be supplied between the seed layer and the polychromic contact body. In the sample, when the application of the plating voltage is stopped, the porous 315432 20 200423201 contact body and the substrate can be rotated, moved or vibrated, and the plating solution can be dissolved on the surface of the seed layer. The third aspect is porous contact The change in the pressing state between the body and the seed layer is a change in the pressure of the seed layer by the porous contact body. The state of the bond voltage applied between the seed layer and the anode can be exemplified. In this case, for example, when the pressure between the porous contact body and the seed layer is high, a relatively high clock voltage is applied to make money, and the porous contact body and the seed are reduced. Floor The pressure between them becomes a low voltage, and a relatively low Wei voltage is applied between the seed layer and the anode, which can supply the electric clock liquid that is consumed when a high voltage is applied when a low recording voltage is applied. When the state of the electric power voltage applied between the seed layer and the anode of the seed layer is changed, and the change of the state of the porous contact body to the seed layer according to the change in the state of the seed layer is related to each other, for example, the electric power voltage can be applied. The interval between time = is set to be changeable. Furthermore, the voltage and current of the shovel can make either one of them 疋, or they can be made slowly and meaningfully. Also at the initial time of electroplating, It can be plated at a constant voltage, or it can be plated at a constant voltage later. In the reading method in January, in the state of the pen applied to the seed layer and the anode, the porous materials of Xiao are connected to each other to carry out the emperor. As for the protection of the righteous daughter Dingyun, the general method can also be used to thin the seed layer on the substrate, the husband and wife can also contact the seed layer on the porous layer. It can be electroplated for a short time under phantom The mass contact body is in contact with the seed crystal; it is known that the state of the plating voltage between the seed layer and the anode 315432 21 200423201 is related to the porous connection to perform the electric clock. The slave phase between the layers Not very :: Li ΐ :! The plating solution used is not particularly limited. Although it can be a double 3 additive plating solution, it is a plating solution with additives. Especially when wood uses a highly hydrophobic plating solution as the plating solution. ：：：： Additives with acid copper electroplating ingredients such as copper sulfate electroplating bath, etc., and additives for injury caused by Younongzai Edition. 4 & 4 No ingredients and carrier ingredients are required for other plating methods Is the lambda method of the micro-recessed wiring for the preparation, B "Tian said that the seed layer covers the substrate AA 卩, and is arranged between the anodes arranged on the surface of the seed layer 层 pbase = 蛊. The water-retaining multi-layer two = front; while the seed layer and the anode are filled with a plating solution 1 while plating, the porous body is placed on the seed layer with an arbitrary pressure while the seed layer is placed on the seed layer. Connected with the aforementioned Yangwen to engage in electroplating. The preferred aspect of the present invention is that before the aforementioned seed layer and the front are energized to perform power mining,-while pressing the foregoing = body and Keshu seed layer with an arbitrary pressure, let them face each other. mobile. In a preferred aspect of the present invention, in order to release the current between the seed layer and the anode during the manufacturing process, the porous body is separated from the seed layer. Please don't take this into account, you can update (replace) the plating solution of the porous body and the seed layer in the process. 3 —Another electroplating method according to the present invention is to prepare a substrate having a fine recess for wiring covered with a seed layer, and an anode electrode disposed on the surface of the seed layer and 315432 22 丄 at a predetermined interval. 1, 4 is provided with a porous shell with water retention, and when the seed layer and the two pores are energized for electroplating, the plating solution is filled with Ren Yin ’s parent "at the price of A1 of the seed : The electric core between the pressing of the porous body by the soil force: After the foregoing silver liquid is removed from the porous body and the seed layer], thunder is applied to perform electroplating. A preferred aspect of the invention is that the power is applied only when the layers are in contact with each other. The substrate processing apparatus of the present invention is described in January, and it is ± η ^ Π ,, 糸 /, and yi〇adunl〇adstation); the scope of application for patents No. 1 to No. 33: electric power mine installation; washing and drying device for washing and drying the substrate, and transporting the substrate to the aforementioned jealousy A ,, D, Keshu electroplating device and the conveying device between the washing and drying residual waves. It is preferable to further have a polishing device to grind and remove the unnecessary metal film formed on the surface of the substrate by the aforementioned electroplating device and to flatten it. It is further preferable to have a heat treatment device to form a metal film formed by the aforementioned electric mining device. The substrate is heat-treated. By this, before the unnecessary metal film is removed by the polishing device, the substrate can be subjected to a heat treatment (annealing treatment), and then the unnecessary metal film can be polished and removed by the polishing device, and the wiring can be removed. It has good electrical characteristics. It is better to have a slanted engraving device to remove the metal film attached to the substrate and process it on the periphery of the substrate with the last name. By this, for example, forming a metal film for landfill on the substrate surface, After washing with the 315432 23 200423201 cleaning device, the metal film formed on the slanted surface of the substrate can be engraved immediately with the slanted surface engraving device. ^ There is a monitoring section to monitor the application of the plating voltage to the aforementioned plating device. At least one of a voltage value and a current value between the anode and the cathode electrode. The end point of the electric ore of the plating device can be fed back and the electric ore can be terminated. It is better to have a film thickness tester to test the film thickness of the metal film formed on the surface of the substrate. The film thickness of the metal film, feedback the test results, and increase or decrease the plating time according to need. / The metal film is formed with a predetermined film thickness with good reproducibility. [Embodiment] 'The embodiment of the present invention will be described with reference to the drawings. This implementation The morphology example does not use micro-recesses for wiring provided on the surface of substrates such as semiconductor wafers. It is prepared by using electric ore landfill as a wiring material. Copper can be formed to form a wire layer composed of a copper layer. Other wiring materials can also be used. With reference to Figs. 1A to 彳 d, >, n, ..., 1D, a copper wiring formation example of a semiconductor device will be described. As shown in FIG. 1A, an oxide film made of, for example, ⑽2 is deposited on the electric layer ia where the semiconductor element is formed: two. Insulation film of two IS (Insulation film) 2. In the inner port P of the insulation film 2, for example, using lithography and etching technology, the tooth holes 3 and the trenches 4 are taken as fine recesses for wiring, and the old iron is used on it. The temple forms a barrier layer 5 composed of TaN and the like, and on the other hand, a sputtering layer is used to form a seed layer 6 which is used as an electroplating layer for 315432 24 200423201. Then, as shown in FIG. 1B, copper is filled in the through-holes 3 and the trenches 4 of the substrate W by applying copper ore on the surface of the substrate W, and a copper layer 7 is deposited on the insulating film 2. After that, the barrier layer 5, the seed layer 6, and the copper layer 7 on the insulating film 2 are removed by chemical mechanical polishing (CMp), so that the surface of the copper layer 7 filled in the through holes 3 and the trenches 4 and the insulating film 2 The surfaces become approximately the same plane. Thereby, as shown in FIG. 1C, a wiring (copper wiring) 8 composed of a seed layer 6 and a copper layer 7 is formed inside the insulating film 2. Next, as shown in FIG. 1D, electroless plating is performed on the surface of the substrate, and a protective film 9 made of a C0 alloy or a shame alloy is selectively formed on the surface of the wiring 8, thereby covering the protective film 9 with protection. The surface of the wiring 8. Figure 2 is a plan view showing a substrate processing apparatus provided with an electric mining apparatus according to an embodiment of the present invention. As shown in Fig. 2, the substrate processing apparatus is provided with, for example, a rectangular device frame 12, which can be freely mounted in a Smith box or the like. p A transport box μ that stores a plurality of substrates such as semiconductor wafers. Dreams are provided inside the device frame 12. "

有有衣卸台14，以及在與該裝卸台U 之間收达基板的行走自如的搬 人16°而在夾住搬運 栈…6的该搬運機器人16之兩側，配置一對 置 U，再於夾住搬運機器人 、、 置20 4而心 側’串聯配置洗淨乾燥裝 置20、斜面蝕刻背面洗淨 ψ _ ,.., 、 及膜厚測試器24，而在 另一側串聯配置熱處理褒置 電解電鑛裝置30及研磨裝置ΤΙ處理裝 在此’於裝置框12執行遮光處理，藉此，使該裝置 315432 25 200423201 忙12内的以下各製程於遮光狀態，亦即照明光等光不會照 射等於配線的情況下進行。如此 1 丁如此猎由防止光線照射到配 線，例如可防止光線照射到由銅構成的配線而產生光電位 差，並防止因該光電位差所引起的腐蝕配線。 第3圖係顯示本發明實施形態的電鑛裝置之概要。如 第3圖所示，電鑛裝置係具備水平方向搖動自如的搖動臂 .500’在該搖動臂的前端支撐有旋轉自如的電極頭 參502。3 —方面，在電極頭5〇2的下方上下移動自如地配置 基板台504以保持基板w表面（被電鍍面）朝上，在該基板 〇 504上方以圍繞该基板台504周邊部的方式配置陰極 部506。又在本例中，電極頭5〇2係使用其直徑僅比基板 台504的直徑稍小者，不需改變電極頭5〇2與基板台 的相對位置，即可對由基板台5〇4所保持的基板w表面（被 電鍍面）進行大致全面的電鍍。 在基板台504上面的周邊部，設置有通連設於内部的 •真空通道504a之環狀的真空吸附溝5〇4b，在夾住該真空 • 吸附溝504b的内外兩側裝設有密封環508、5 1 0。另於位 在基板台504上面的内方之密封環5〇8内側，設置加壓用 凹部504c，該加壓用凹部504c係通連至延伸在基板台5〇4 内部的加壓流體通道504d。 藉此’將基板W載置在基板台504上面，藉由透過真 空通道504a真空吸引真空吸附溝504b内，吸附基板W保 持其周邊部，再透過加壓流體通道5〇4d供給加壓空氣等的 加壓流體於加壓用凹部504c内，利用以壓力ps從其背面 26 315432 200423201 側加壓基板w，以將基板w維持在更水平之狀態，可如下 述般地密接在多孔質體528的下面。 又雖未圖示，但在基板台5〇4内藏有控制基板台5〇4 的溫度於一定的加熱裝置（加熱器）。再者，基板台5〇4利 用未圖不的空氣汽缸（未圖示）上下移動，透過未圖示的旋 轉馬達及皮帶（belt)，以任意的加速度及速度形成與陰極部 506 —起旋轉的構造。此時的旋轉轉矩，係由未圖示的轉 矩感測器來檢測。而當基板台5〇4上昇時，下述陰極部5〇6 的密封材514與陰極電極512係抵接在由基板台5〇4所保 持的基板W周邊部。 搖動臂500係透過由未圖示的伺服馬達所構成的上下 移動馬達和滾珠螺桿上下移動，透過未圖示的旋轉馬達形 成旋轉（搖動）狀態，但亦可使用氣壓致動器。 前述陰極部506,在本例係具有分割為6的陰極電極 512，及覆盍該陰極電極512上方而裝設的環狀之密封材 514。密封材514之其内周緣部係朝内方向下方傾=，且， 度逐漸變薄’而構成内周緣部向下方垂下。 糟此，於基板台504上昇時 I丢極電極5 12被壓靠^ 〆土反口 5 04所保持的基板W周邊部進行通電，同時： 封材514的内周端部壓接基板w周邊部上面，水密性心 ί:處，以防止供給在基板上面(被電鍍面)的電鍍 板W的端部渗出，並同時防止電鑛液污染陰極電極川土 美二t例中’陰極部506係以無法上下移動之方式! 土 口 起旋轉，但亦可構成上下移動自如地於下汽 315432 27 200423201 時使密封材514壓接基板w的被電鍍面。 前述電極頭5〇2係同為在下方開口的有底圓筒狀，且 有配置成同心狀的旋轉殼體別與上下移動殼體切。而、 旋轉殼體520係為固農在裝在搖動臂细自由端的旋㈣ 524的下面並與該旋轉體524 一起旋轉的構成。另—方面， 上下移動殼體522係於其上部位於旋轉殼體52〇的内部與 .該旋轉殼體520 -起旋轉，並相對地上下移動的構成二 .下移動殼體522係以多孔質體528堵塞下端開口部的方 式’在内部配置圓板狀陽極526，而區隔形成陽極室$儿 以導入浸潰該陽極526的電鍍液q。 忒多孔質體528在本例中，係積層3層多孔質材的多 層構。亦即，多孔質體528係由主要為發揮保持電鑛液 的作用之電鍍液含浸材532，及裝設在該電鍍液含浸材 下面的多孔質墊534所構成；該多孔質墊534係由直接接 觸基板w的下層墊534a，及介裝在該下層墊53物與電鍍 •液含浸材532之間的上層墊534b構成。而電鍍液含浸材又 • 532與上層墊534b，係位於上下移動殼體522的内部，並 形成以下層墊534a堵塞上下移動殼體522的下端開口部。 如此’利用將多孔質體528設成多層構造，即可使用 具有足夠平坦性的例如與基板接觸的多孔質墊534(下層墊 534a)’而使基板的被電鍍面上之凹凸面平坦化。 該下層墊534a必須是與基板w表面（被電鍍面）接觸 的面（表面）要有相當高程度的平坦性，並具有可通過電鍍 液的微細貫通孔，且至少接觸面是要由絕緣物或絕緣性高 28 315432 200423201 的物質所形成。該下層墊534a所被要求的平坦性，例如最 大粗糙度（RMS)為在數十Am以下程度。 再者，下層墊534a所被要求的微細貫通孔，為保持接 觸面的平坦性最好是圓孔的貫通孔，&外，微細貫通孔的 孔徑與平均每單位面積的個數等雖因電鍍的膜質和配線圖 案而有不同最佳質，但兩者在提昇凹部内之電鍍成長選擇 :士以較小者為佳。具體而纟，微細貫通孔的孔徑與平均 每單位面積的個數，例如孔徑在3〇 # m以下，最好是$至 20 // m的微小貫通孔，以氣孔率在5()%以下的狀態存 可。 又，下層墊534a最好具某種程度的硬度，例如其抗拉 強度為5至100kg/cm2、彎曲彈性強度在2〇〇至1〇〇〇〇^/咖2 左右即可。 忒下層墊534a最好更是親水性的材料，例如使用對於 下述材料做過親水化處理或經聚合親水基者。該種材料例 可列舉出··多孔聚乙烯(PE)、多孔聚丙烯(pp)、多孔聚醯 胺、多孔聚碳駿酯或多孔聚醯亞胺等。其中，多孔聚乙烯、 多孔聚丙烯、多孔聚醯胺等，係以超高分子pE、pp、聚酸 胺等細為原料，再將其壓緊，藉由燒結成形調製而： 者，以富露達斯（音譯）S(三菱樹脂（股）製）、桑法因（音 譯）UF、桑法因Aq(皆為旭化成（股）製）、㈣广 chemical公司製）等商品名銷售中。又多孔聚碳酸酯，例如 係為以加速器加速的高能量重金屬（銅等）貫穿聚碳酸酯 膜再將藉此所產生的直線上的軌跡（track)透過選擇性|虫 315432 29 200423201 刻調製而成者。 下層塾534a亦可為利錢縮加工、機械加工等平坦化 加工接觸基板W之矣去，莊 優先析出。纟面者猎此可』在微小溝作出更高的 # 另一方面’電鍍液含浸材532,係由釁土、sic、舍紹 紅，石、氧化錯、二氧化鈦、堇青石（⑽diedte)等多:質 陶瓷或聚丙烯、聚乙烯的燒結體等的硬質多孔質體，或者 該等的複合體，還是織布或不織布構成。例如土系陶 变時使用微孔徑30至2()()/zm、Sic時使用微孔徑3〇心 以下’氣孔率20至95%，厚度！至2〇_，最好在$至 2〇職’更好在8至15mm左右者。在本例中，例如係由氣 孔率30%、平均微孔徑1GG#m㈣土製多孔質陶究板所 構成。而藉由在其内部含有電鍍液，即多孔質陶瓷板本身 隹為 '、’邑緣體，但藉由在其内部複雜地混入電錄液，在厚度 方向形成相當長的通路，而構成具有比電錄液的導電率小 的導電率。 如上所述藉由將電鍍液含浸材532配置在陽極室53〇 内，透過電鍍液含浸材532產生大電阻，可使晶種層6(參 昭势 1 A 乂 …、弟ΙΑ圖）的電阻影響變成足以忽視的程度，並使基板w 表面電阻所引起的電流密度面内差變小，即可提昇電鑛膜 的面内均勻性。 於本例中，在電極頭5〇2設有具3個氣囊的按壓分離 機構，以任意的壓力將下層墊534a按壓在由基板台5〇4 保持基板W的表面（被電鐘面）’並從該表面分離。亦即 30 315432 200423201 在本例中’於旋轉殼體520的頂壁下面與上下移動殼體522 的頂壁上面之間，配置環狀的第1氣囊540，於上下移動 殼體522内部的該上下移動殼體522的頂壁下面與陽極 526的上面之間，配置環狀的第2氣囊542。再於上下移動 殼體522的中央部，連接向上方突出而達旋轉殼體52〇的 上方之有底圓筒體544，在該有底圓筒體544的頂壁下面 與旋轉殼體520的頂壁上面之間，配置圓狀的第3氣囊 546。又該等的氣囊54〇、542、546係透過加壓流體導入管 5 5 0、5 5 2、5 5 4連接在加壓流體供給源（未圖示）。藉由該等 的氣囊540、542、546構成按壓分離機構。 亦即，以將搖動臂500固定在不能在預定的位置（製程 位置）上下移動的狀態，如第3圖所示，分別藉由以壓力 Pi、Pa、加壓第i氣囊54〇之内部、第2氣囊sc之内 部、第3氣囊546之内部，以任意的壓力將下層墊534a 按壓於由基板台504所保持的基板w表面（被電鍍面）。而 藉由將上述壓力P〗、p2、P3恢復到大氣壓力，使下層墊534a 從基板W表面離開。藉此，透過第！氣囊540及第3氣囊 5 4 6將上下移動殼體5 2 2於其整個水平方向更均勻地按 [’或透過弟2氣囊542將陽極室530内的陽極526於其 整體更均勻地按壓，可將下層墊534a其整體更均勻地密接 在由基板台5 0 4所保持的基板w全面。 '‘ 在上下移動殼體522裝設有將電鍍液導入其内部的電 鍍液導入管5 5 6，及導入加壓流體的加壓流體導入管5 5 8 ; 在陽極526内部設有多數的細孔526a。藉此，電鍍液Q從 31 315432 200423201 電鍍液‘入官556被導入陽極室53〇内，利用以壓力匕 加壓陽極室630内部，而通過陽極526的細孔52以内達電 鍍液含次材532上面，並從其内部通過多孔質墊534(上層 塾534b及下層塾534a)的内部，到達由基板纟5〇4所保持 的基板W上面。 再者’陽極室530的内部，也包含由化學反應所產生 •的氣體，因此，壓力會有所變化。故陽極室53〇内的壓力 籲P3係藉由製程中的回授控制而控制在某設定值。 在此，陽極526在例如進行銅電鑛時，為了抑制殿潰 (shme)的產生，係以磷的含有量為〇 〇3至〇 的銅（含磷 銅）所構成。陽極526可為白金、鈦等不溶解性金屬或在金 屬上鑛白金等不溶解性電極，從不需更換等來看，最好是 不溶解性金屬或不溶解性電極。再者，從電鍵液的易流通 性等來看，亦可是網狀。 陰極電極5 12與陽極526係分別電性連接在電鍍電源 參560的陰極與陽極。在上下移動殼體⑵設有連接於電鑛 ，電源560且用以供電給陽極526的供電埠562。 其次，針對以該電鍍裝置18進行電鍍時的操作另參 照第4圖加以說明。 首先，在基板台504上面以吸附保持基板|的狀態， 令基板台504上昇’並使基板w的周邊部接觸陰極電極 512而形成可通電的狀態，再使其上昇，而令密封材… 壓接基板w的周邊部上面，以密封材514水密性地密封基 板W的周邊部。 土 315432 32 200423201 於電極頭502從進行空轉而執行電鍍液的 =及去泡等的位置（空轉位置），以將電鑛液Q保持在内 :的狀態，使其位於預定的位置(製程位置亦即，藉由 :旦上昇搖動臂5〇〇再令其旋轉，使電極頭5〇2位於^板 口 504的正上方位置，之後，令其下降而在到達預定位置 (製程位置）時令其停止。然後，加壓陽極室53〇内到壓力 P3，使以電極頭502保持的電鍍液Q從多孔質墊534的下 面吐出。 其次，導入加壓空氣於氣囊54〇、、546内，同時 也‘入加壓空氣於基板台5〇4的加壓用凹部5〇耗内，藉 此，使上下移動殼體522下降，再將下層墊53钧往下方推 壓，同時以基板台504保持的基板也從其背面側加壓，以 預定的壓力將下層墊53乜按壓於基板表面（被電鍍面）。藉 此，可將基板W維持在更水平之狀態，且以更均勻的壓力 將下層墊534a按壓於整個基板w。 以此狀態使電極頭502及基板台504旋轉（自轉）， 藉此，於電鍍前，透過以任意的壓力一邊將下層墊534a 按壓於由基板台504保持的基板w之被電鍍面，一邊令兩 者相對移動，可提高下層墊534a與基板W的密接性。 然後，於停止電極頭502及基板台504的旋轉之後， 为別將陰極電極512、陽極526連接在電鍍電源560，的陰 極與陽極，藉此在基板W之被電鍍面進行電鍍。如此，透 過以任意的壓力將下層墊53乜按壓於由基板台504保持的 基板W之被電鐘面’而且在提高兩者的密接性之狀態下進 33 315432 200423201 行電鍍，可儘可能縮小下層墊534a與基板w之被電鍍面 的溝渠等配線用微細凹部以外部分（圖案部以外的部分）之 間的間隙，而在設於基板的配線用微細凹部之内部選擇性 地析出電鍍膜。 接^，在繼續預定時間的電鍵之後，於解除陰極電極 5 12及陽極526的與電鍍電源56〇之連接之同時，將陽極 ’室530内恢復到大氣壓力，再將氣囊540、542、546内恢 籲復到大氣壓力，使下層墊534a從基板w離開。藉此，更 新（替換）下層墊534a與基板W之間的電鍍液。 其次，與前述同樣地，在氣囊54〇、542 ' 546内導入 加壓流體以預定的壓力將下層墊534a按壓於基板，再於陽 極室530内也導入加壓流體，以此狀態使電極頭及基 板台504旋轉，並於停止該旋轉之後，將陰極電極512及 陽極526連接到電鍍電源56〇以進行電鍍。如此，透過在 製程中使下層墊534a從由基板台504保持的基板貿分 #離，更新（替換）下層墊534a與基板w之間的電鍍液，之 κ後，再度進行電鍍，可在設於基板的配線用微細凹部之内 部選擇性地高效率析出電鍍膜。而且，透過任意調整將下 層墊53 4a按壓於基板W之被電鍍面的壓力，可以防止因 下層墊534a而使基板w之被電鍍面和成膜中的電鍍膜受 到傷害。 視需要反覆上述操作複數次（第4圖顯示反覆2次的狀 態）’之後，將氣囊540、542、546、基板台504加壓用凹 部5 04c，以及陽極室530恢復到大氣壓力，使搖動臂5〇〇 315432 200423201 上昇再旋轉回歸到原來位置（空轉位置）。 第5圖係顯示管理電鍍液的組成與 鍍裝置的電鍍液管理供給夺统。 仏、，口到电 電鑛裝置W電極頭5(^、t 圖所示’具有浸潰 U柽碩502並進行空轉的電鍍液托盤6〇〇， 該電鍍液托盤60〇#读@@^^ 0ϋϋ 係透過電鍍液排出管6〇2 604，流過電鍍液排屮其 安碎存口口 出& 所排出的電鍍液進入儲存器 C)U4 〇 而=入該儲存器604的電鑛液，係隨著幫浦 動進入電鍍液調整槽608。在該電鍍液調整槽6〇8附設有 皿度控制益610及取出並分析樣品液的電鍍液分析單元 且連接成份補給管614,以補給因電鑛液分析單元612 不足的成份。電鍍液調整槽6〇8内的電鑛液係隨 者以616的驅動，沿著電鐘液供給管618流動，通過過 渡裔620回到電鍍液托盤600。 如此，透過在電鍍液調整槽6〇8將電鑛液的成份及溫 又調整於一定’並將該調整過的電鍍液供給到電鍍裝置18 的電極頭502 ’以該電極頭5()2來保持，可將經常且有一 定成=及溫度㈣鑛液供給至電鍍裝置18的電極頭⑽。 第圖及f 7圖係顯示用於洗淨⑺㈣）、乾燥基板w 的洗甲、乾無裝置20之-例。亦即，該洗淨、乾燥裝置 2〇係首先進行化學洗淨及純水洗淨後，利用主軸旋轉來完. 全乾燥洗淨後的基板w的裝置，具備有：包含把持基板w 邊緣部的央持機構420之基板台422，及執行該夾持機構 420的開關之基板裝卸用昇降板424。 315432 35 200423201 基板台422係隨著主軸旋轉用馬達（未圖示）的驅動， 連結在高速旋轉的主轴426上端。又在由夹持機構42〇把 持的基板w周圍，配置有防止處理液飛散的洗淨杯d 該洗淨杯428係隨未圖示的汽缸之作動而上下移動。 再者，洗淨、乾燥裝置20係具有：將處理液供給至 、由夾持機構420把持的基板w表面之藥液用噴嘴43〇 ;供 給純水至基板w背面的複數個純水用噴嘴432 :以及配置 ♦在由夾持機構420把持的基板w上方而可旋轉的筆型洗淨 海，434。該洗淨海綿434係裳設在可水平方向搖動的旋 轉臂436之自由端。又在洗淨、乾燥裝置2〇上部設置有用 以S入α淨空氣於裝置内的清淨空氣導入口 8。 在上述構成的洗淨、乾燥裝置2〇中，透過以夾持機 構420把持並旋轉基板w，令旋轉臂436邊旋轉，一邊從 藥液用噴嘴430向洗淨海綿434供給處理液，一邊以洗淨 海綿434擦拭基板w表面，來進行基板w表面的洗淨。 層然後，從純水用噴嘴432向基板w背面供給純水，以從該 ‘ j水用噴嘴432所噴射的純水也同時洗淨（rinse)基板W之 月面。以上述方式所洗淨的基板W，藉由高速旋轉主軸426 來進行旋轉乾燥。 第8圖係顯示斜面蝕刻、背面洗淨裝置22之一例。 1斜面蝕刻、背面洗淨裝置2 2係同時進行蝕刻附著在基板 邊緣（斜面）部的㈣7(參照第1B 及背面洗淨，而且是 要抑制設在基板表面的電路形成部之銅的自然氧化膜之成 長者具有.位於有底圓筒狀防水蓋920的内部，將基板 36 315432 200423201 w朝上並於沿其周邊部的圓周方向的複數處藉由旋轉央頭 ;921加以水平保持以進行高速旋轉的基板台922;配置在由 «亥基板σ 922所保持的基板w表面側之大致中央部上方的 中央喷紫924，以及配置在基板w周邊部上方的周邊部喷 嘴926。中央喷嘴924及周邊部嘴嘴9%係分別朝下配置。 又月部噴嘴928係朝上配置，並位於基板w背面侧之大致 中央部:方。前述周邊部喷嘴926係構成在基板w的直徑 方向及高度方向移動自如。 立5亥周邊部噴嘴926係形成可從基板的外周端面沿中心 邛方向定位於任意的位置，其移動寬度L係配合基板W的 大U使用目的等而任意設定。通常在21麵到5匪的範 圍設定切邊（edgeeut)寬度C，只要從f面繞到表面的液量 為不成問題的旋轉速度以i，可去除其所設定的切邊寬度 c内的鋼層等。 其次，針對運用該斜面蝕刻背面洗淨裝置22的洗淨 方法加以說明。首先，藉由旋轉夹頭921於以基板台922 水平保持基板W的狀態，水平旋轉和基板台922成為一體 的基板W。在此狀態下，從中央喷嘴924向基板w表面側 t中央部供給酸溶液。該酸溶液只要是非氧化性的酸即 可，例如可用氟酸、鹽酸、硫酸、檸檬酸、草酸等。另一 面彳文周迻部噴鳴926向基板w周邊部連續性或間歇性 地L給氧化劑溶液。該氧化劑溶液可用臭氧水、過氧化氫 水、硝酸水、次氯酸鈉水等之任一種或該等的組合。 藉此，在基板W周邊部的切邊寬度c區域所成膜在上 315432 37 200423201 面及端面的銅層等因氧化劑溶液而快速氧化，同時藉由從 中央喷嘴924所供給而擴散至整個基板表面的酸溶液而被 钮刻溶解去除。如上所述，透過在基板周邊部混合酸溶液 與氧化劑溶液，與事先將該等的混合水從嘴嘴供給之情形 2比較，可獲得陡Λ肖的㈣輪廓。此時藉由該等的濃度決 、疋銅的韻刻速率。再者，於基板表面的電路形成部形成有 銅的自然氧化膜時，該自然氧化膜伴隨基板的旋轉立刻被 鲁遍佈整個基板表面的酸溶液所去除而無法成長。又於停止 來自中央噴嘴924的酸溶液供給之後，利用停止來自周邊 部噴嘴926的氧化劑溶液之供給，使露出表面的石夕氧化， 可抑制銅的附著。 另一方面 交互供給氧化 的石夕以氧化劑 專氧化，並以 至表面的氧化 類上較為理想 基板表面側的 藉此，先停止 敍刻劑溶液則 製程所要求的There is a clothes unloading table 14 and a freely moving person 16 ° for receiving a substrate between the loading and unloading table U and a pair of placing U on both sides of the conveying robot 16 that sandwiches a conveying stack ... 6, Then, the conveying robot is clamped, and 20 4 is placed, and the heart side is arranged in series with the washing and drying device 20, the oblique etching back surface is washed ψ _, ..,, and the film thickness tester 24, and the heat treatment is arranged in series on the other side. The electrolytic power mining device 30 and the grinding device Ti processing are installed here to perform light-shielding processing on the device frame 12, thereby making the device 315432 25 200423201 the following processes in the busy 12 in a light-shielding state, that is, light such as illumination light Do not irradiate the wiring. In this way, by preventing the light from being radiated to the wiring, for example, it is possible to prevent the light from generating a potential difference by irradiating the wiring made of copper, and to prevent the wiring from being corroded due to the difference. Fig. 3 is a schematic diagram showing an electric mining device according to an embodiment of the present invention. As shown in FIG. 3, the power mining device is provided with a swinging arm that can swing freely in the horizontal direction. 500 'supports a freely rotatable electrode tip 502 at the front end of the swinging arm. The substrate stage 504 is movably arranged up and down so that the surface of the substrate w (the surface to be plated) faces upward, and the cathode portion 506 is arranged above the substrate 504 so as to surround the periphery of the substrate stage 504. Also in this example, the electrode tip 502 uses a diameter which is only slightly smaller than the diameter of the substrate stage 504. Without changing the relative position of the electrode tip 502 and the substrate stage, the substrate stage 504 can be used. The surface (plated surface) of the held substrate w is subjected to substantially full plating. A peripheral vacuum suction groove 504b communicating with the internal vacuum channel 504a is provided on the peripheral portion of the upper surface of the substrate table 504. Sealing rings are provided on both the inner and outer sides of the vacuum suction groove 504b. 508, 5 1 0. A pressure recess 504c is provided on the inner side of the inner seal ring 508 above the substrate table 504, and the pressure recess 504c is connected to a pressurized fluid channel 504d extending inside the substrate table 504. . In this way, the substrate W is placed on the substrate stage 504, and the vacuum suction groove 504b is sucked by the vacuum passage 504a. The substrate W is held at its peripheral portion, and then pressurized air is supplied through the pressurized fluid passage 504d. The pressurized fluid in the pressurizing recess 504c is used to press the substrate w from the back side 26 315432 200423201 side with a pressure ps to maintain the substrate w at a more horizontal state, and it can be tightly adhered to the porous body 528 as described below. Below. Although not shown in the figure, a heating device (heater) for controlling the temperature of the substrate stage 504 to be constant is contained in the substrate stage 504. In addition, the substrate stage 504 is moved up and down by an air cylinder (not shown) (not shown), and rotates with the cathode portion 506 at an arbitrary acceleration and speed through a rotation motor and a belt (not shown). The construction. The rotational torque at this time is detected by a torque sensor (not shown). On the other hand, when the substrate stage 504 is raised, the sealing material 514 of the cathode portion 506 and the cathode electrode 512 are in contact with the peripheral portion of the substrate W held by the substrate stage 504. The swing arm 500 is moved up and down by a vertical movement motor and a ball screw composed of a servo motor (not shown), and a swing (swing) state is formed by a rotation motor (not shown), but a pneumatic actuator may be used. The above-mentioned cathode portion 506 has a cathode electrode 512 divided into six in this example, and a ring-shaped sealing material 514 installed over the cathode electrode 512. The inner peripheral edge portion of the sealing material 514 is inclined downward inward, and the degree of the inner peripheral edge portion is gradually reduced to form a downward direction. As a result, when the substrate stage 504 rises, the I-dead electrode 5 12 is pressed against the peripheral portion of the substrate W held by the substrate 504. At the same time, the inner peripheral end portion of the sealing material 514 is crimped to the periphery of the substrate w. In the upper part, the watertightness center is provided to prevent the end of the plating plate W supplied on the substrate (the surface to be plated) from oozing out, and at the same time to prevent the cathode electrode from being contaminated by the electric and mineral liquid. 506 is in a way that cannot be moved up and down! The soil mouth rotates, but it can also constitute a plated surface where the sealing material 514 is crimped to the substrate w when the steam 315432 27 200423201 is moved up and down freely. The electrode tip 502 has a bottomed cylindrical shape that is open at the bottom, and a rotating case arranged in a concentric shape is cut with a vertical moving case. In addition, the rotating housing 520 is a structure in which the solid farmer is installed under the rotary shaft 524 mounted on the thin free end of the swing arm and rotates together with the rotary body 524. On the other hand, the upper and lower moving casings 522 are connected to the upper part of the rotating casing 52. The rotating casing 520 is configured to rotate and relatively move up and down. The lower moving casing 522 is made of porous material. The way in which the body 528 blocks the opening at the lower end is that a circular plate-shaped anode 526 is arranged inside, and an anode chamber is formed by partitioning to introduce a plating solution q that impregnates the anode 526. In this example, the osmotic porous body 528 has a multilayer structure of three layers of porous materials. That is, the porous body 528 is composed of an electroplating solution impregnating material 532 which mainly plays a role of retaining the electric mineral liquid, and a porous pad 534 installed under the electroplating solution impregnating material; the porous pad 534 is composed of A lower layer pad 534a that directly contacts the substrate w and an upper layer pad 534b interposed between the lower layer pad 53 and the plating / liquid impregnating material 532. The plating solution impregnating material 532 and the upper pad 534b are located inside the up-and-down moving case 522, and form a lower pad 534a that blocks the lower end opening of the up-and-down moving case 522. As described above, 'the porous body 528 has a multi-layered structure, so that, for example, a porous pad 534 (lower pad 534a) having sufficient flatness, which is in contact with the substrate, can be used to flatten the uneven surface of the substrate to be plated. The underlayer pad 534a must be a surface (surface) that is in contact with the surface (plated surface) of the substrate w with a relatively high degree of flatness, and has a fine through hole that can pass through the plating solution, and at least the contact surface is made of an insulator. Or high insulation 28 315432 200423201. The required flatness of the lower-layer pad 534a is, for example, about tens of Am or less. Furthermore, the fine through-holes required for the lower pad 534a are preferably circular through-holes in order to maintain the flatness of the contact surface. In addition, the pore diameter of the fine through-holes and the average number per unit area may vary. The quality of the plated film and the wiring pattern have different best qualities, but the growth choice of the two in the improvement of the plating: the smaller is better. Specifically, the pore diameter of the fine through holes and the average number per unit area, for example, small through holes with a pore diameter of less than 30 # m, preferably $ to 20 // m, and a porosity of 5 ()% or less The status is OK. The lower mat 534a preferably has a certain degree of hardness. For example, the lower mat 534a may have a tensile strength of 5 to 100 kg / cm2 and a bending elastic strength of about 2000 to 100000 ^ / ca 2. The lower pad 534a is more preferably a hydrophilic material, for example, one which has been hydrophilized or polymerized with a hydrophilic group as described below. Examples of such materials include porous polyethylene (PE), porous polypropylene (pp), porous polyamide, porous polycarbamate, and porous polyimide. Among them, porous polyethylene, porous polypropylene, porous polyamide, etc. are based on ultra-high molecular weight pE, pp, polyurethane, etc. as raw materials, and then they are compacted and prepared by sintering to form: Ludas S (Mitsubishi Resin Co., Ltd.), Sanfain (Transliteration) UF, Sanfain Aq (both manufactured by Asahi Kasei Co., Ltd.), and Hiroshi Chemical Co., Ltd. are being sold. Porous polycarbonate, for example, is a high-energy heavy metal (copper, etc.) accelerated by an accelerator, penetrates the polycarbonate membrane, and then transmits the track on the straight line generated by the selective | worm 315432 29 200423201 modulation and Successor. The lower layer 534a can also be used for flattening processing such as profit reduction processing, machining, etc. to contact the substrate W, and Zhuang preferentially precipitates.纟 面 者 猎取 可 "makes a higher ## in the small groove. On the other hand, the plating solution impregnating material 532 is made of adobe, sic, shosha red, stone, oxide, titanium dioxide, and cordierite (⑽diedte). : Porous ceramics, rigid porous bodies such as polypropylene, polyethylene, or sintered bodies of polyethylene, or composites of these, are made of woven or non-woven fabrics. For example, in the case of soil-type ceramics, a micropore size of 30 to 2 () () / zm is used, and a micropore size of 30 or less is used in Sic. The porosity is 20 to 95%, and the thickness is! It is preferably from 20 to 20, preferably from $ to 20, and more preferably from 8 to 15 mm. In this example, for example, it consists of a porous ceramic board made of earth with a porosity of 30% and an average micropore diameter of 1GG # m. It contains a plating solution in its inside, that is, the porous ceramic plate itself is called “、”, but it has a long passage in the thickness direction by complicatedly mixing the recording solution in the inside. The conductivity is smaller than that of the recording fluid. As described above, by arranging the plating solution impregnating material 532 in the anode chamber 53 °, a large resistance is generated through the plating solution impregnating material 532, and the resistance of the seed layer 6 (see Figure 1A 乂 ..., Figure IA) can be made. The influence becomes sufficiently negligible, and the in-plane difference in current density caused by the surface resistance of the substrate w is reduced, so that the in-plane uniformity of the electric ore film can be improved. In this example, the electrode tip 502 is provided with a pressing and separating mechanism with three airbags, and the lower pad 534a is pressed against the surface (the electric clock surface) holding the substrate W by the substrate stage 504 at an arbitrary pressure. And separated from the surface. That is, 30 315432 200423201 In this example, a ring-shaped first airbag 540 is arranged between the bottom of the top wall of the rotating housing 520 and the top of the top wall of the moving housing 522. Between the lower surface of the top wall of the moving case 522 and the upper surface of the anode 526, a ring-shaped second airbag 542 is disposed. A bottomed cylindrical body 544 protruding upward to the upper part of the rotary housing 52 is connected to the central part of the up and down moving housing 522, and the bottom of the bottomed cylindrical body 544 is connected to the bottom of the rotary housing 520 under the top wall of the bottomed cylindrical body 544. Between the upper surface of the top wall, a circular third airbag 546 is arranged. The balloons 54, 542, and 546 are connected to a pressurized fluid supply source (not shown) through a pressurized fluid introduction tube 5 50, 5 5 2, 5 5 4. These airbags 540, 542, and 546 constitute a pressure release mechanism. That is, in a state in which the swing arm 500 is fixed in a state where it cannot move up and down at a predetermined position (process position), as shown in FIG. 3, the inside of the i-th airbag 54o is pressurized with pressure Pi, Pa, Inside the second airbag sc and inside the third airbag 546, the lower pad 534a is pressed against the surface (plated surface) of the substrate w held by the substrate stage 504 with an arbitrary pressure. By returning the pressures P1, p2, and P3 to atmospheric pressure, the lower pad 534a is separated from the surface of the substrate W. Take this through the first! The airbag 540 and the third airbag 5 4 6 will move the housing 5 2 2 up and down more evenly throughout its horizontal direction. Pressing the anode 526 in the anode chamber 530 more evenly throughout the entire horizontal direction. The entire lower layer pad 534a can be more uniformly adhered to the entire surface of the substrate w held by the substrate stage 504. '' A plating solution introduction pipe 5 5 6 for introducing the plating solution into the inside and a pressurized fluid introduction pipe 5 5 8 for introducing a pressurized fluid are installed in the up and down moving casing 522; Hole 526a. Thereby, the plating solution Q is introduced into the anode chamber 53 from 31 315432 200423201 and the plating solution 556 is introduced into the anode chamber 530. The anode chamber 630 is pressurized with a pressure knife, and the plating solution contains secondary materials within the pores 52 of the anode 526. 532 and passes through the porous pad 534 (the upper layer 534b and the lower layer 534a) from the inside to reach the upper surface of the substrate W held by the substrate 504. Furthermore, the inside of the 'anode chamber 530 also contains a gas generated by a chemical reaction, so the pressure may vary. Therefore, the pressure in the anode chamber 53 is called for P3 to be controlled at a set value by the feedback control in the process. Here, the anode 526 is composed of copper (phosphorus-containing copper) having a phosphorus content of 303 to 0 in order to suppress the occurrence of shme when performing copper power ore, for example. The anode 526 may be an insoluble metal such as platinum or titanium, or an insoluble electrode such as platinum on a metal. From the standpoint of no replacement, it is preferably an insoluble metal or an insoluble electrode. In addition, in view of the ease of flow of the key liquid, etc., it may be a mesh. The cathode electrode 512 and the anode 526 are electrically connected to the cathode and anode of the plating power source 560, respectively. A power supply port 562 connected to the power mine, a power source 560 and used to supply power to the anode 526 is provided on the upper and lower moving casings. Next, the operation at the time of plating with the plating apparatus 18 will be described with reference to FIG. 4. First, the substrate substrate 504 is sucked and held on the substrate table 504, and the substrate table 504 is raised, and the peripheral portion of the substrate w is brought into contact with the cathode electrode 512 so as to be able to be energized. Then, it is raised, and the sealing material is pressed. The peripheral portion of the substrate w is connected to the upper surface of the substrate w, and the peripheral portion of the substrate W is hermetically sealed with a sealing material 514. Soil 315432 32 200423201 At the position where the electrode tip 502 is idling and the plating solution is performed = and defoaming etc. (idle position) to maintain the electric mineral liquid Q in the state: so that it is located at a predetermined position (process position That is, by raising the rocking arm 500 once and then rotating it, the electrode tip 502 is positioned directly above the plate opening 504, and thereafter, it is lowered to reach a predetermined position (process position). It stops. Then, the anode chamber 53 is pressurized to a pressure P3, and the plating solution Q held by the electrode tip 502 is discharged from under the porous pad 534. Next, the pressurized air is introduced into the airbags 54 and 546. At the same time, the pressurized air is also consumed within the pressurizing recessed portion 50 of the substrate stage 504, thereby lowering the up-and-down moving housing 522, and then pushing the lower pad 53 downward, while using the substrate stage 504 The held substrate is also pressed from its back side, and the lower pad 53 乜 is pressed against the surface of the substrate (the surface to be plated) with a predetermined pressure. As a result, the substrate W can be maintained at a more horizontal state with a more uniform pressure. The lower layer pad 534a is pressed against the entire substrate w. The electrode head 502 and the substrate table 504 are rotated (rotated) by the state, and thereby, before plating, the lower pad 534a is pressed against the plated surface of the substrate w held by the substrate table 504 with an arbitrary pressure, and both The relative movement can improve the adhesion between the lower pad 534a and the substrate W. Then, after stopping the rotation of the electrode head 502 and the substrate table 504, in order not to connect the cathode electrode 512 and the anode 526 to the plating power source 560, the cathode and anode, Thereby, plating is performed on the plated surface of the substrate W. In this way, the lower pad 53 乜 is pressed against the surface of the substrate W held by the substrate stage 504 by an arbitrary pressure, and the adhesion between the two is improved. Pushing down 33 315432 200423201 line plating can reduce the gap between the lower pad 534a and the micro-recessed parts (except the pattern part) for wiring such as trenches on the plated surface of the substrate w as much as possible. The plating film is selectively deposited using the inside of the fine recessed portion. Then, after continuing the key for a predetermined time, the cathode electrode 5 12 and the anode 526 are disconnected from the plating power source 56. At the same time, the inside of the anode chamber 530 is returned to atmospheric pressure, and the inside of the airbags 540, 542, and 546 is restored to atmospheric pressure, so that the lower pad 534a is separated from the substrate w. By this, the lower pad 534a and the lower pad 534a are updated (replaced). The plating solution between the substrates W. Next, as described above, a pressurized fluid is introduced into the airbags 54 and 542 ′ 546, and the lower pad 534a is pressed against the substrate with a predetermined pressure, and pressure is also introduced into the anode chamber 530. The fluid rotates the electrode head and the substrate stage 504 in this state, and after stopping the rotation, the cathode electrode 512 and the anode electrode 526 are connected to a plating power source 56 to perform plating. In this way, the lower layer pad 534a is separated from the substrate board held by the substrate stage 504 during the manufacturing process, and the plating solution between the lower layer pad 534a and the substrate w is updated (replaced). A plating film is selectively and efficiently deposited inside the fine recessed portion for wiring of the substrate. Furthermore, by arbitrarily adjusting the pressure of pressing the lower pad 53 4a against the plated surface of the substrate W, it is possible to prevent the plated surface of the substrate w and the plated film during film formation from being damaged by the lower pad 534a. Repeat the above operation as many times as necessary (Figure 4 shows the state repeated twice). After that, the airbags 540, 542, and 546, the substrate recess 504 for pressurizing the substrate 504, and the anode chamber 530 are returned to atmospheric pressure to shake. The arm 50031532 200423201 rises and rotates to return to the original position (idling position). Figure 5 shows the composition of the plating solution and the plating solution management supply of the plating equipment.仏 、， 口到 电 电 电 装置 Welectrode head 5 (^, t shown in the figure 'has a plating bath tray 600 which has impregnated U 柽 502 and idling, this plating bath tray 60〇 # 读 @@ ^ ^ 0ϋϋ is through the electroplating solution discharge pipe 602 604, flows through the electroplating solution discharge, and exits its safety deposit port & the discharged electroplating solution enters the storage C) U4 〇 and = electricity ore into the storage 604 The liquid enters the plating solution adjusting tank 608 with the pump. The electroplating solution adjusting tank 608 is provided with a plate control 610 and a plating solution analysis unit that takes out and analyzes the sample solution, and is connected to a component supply pipe 614 to replenish the components that are insufficient due to the electric mineral solution analysis unit 612. The electro-mineral liquid in the electroplating bath adjustment tank 608 is driven by the 616 liquid along the electric bell liquid supply pipe 618, and then returns to the electroplating bath tray 600 through the transition tube 620. In this way, the composition and temperature of the electric ore liquid are adjusted to be constant through the electroplating solution adjustment tank 608, and the adjusted electroplating solution is supplied to the electrode tip 502 of the electroplating device 18. The electrode tip 5 () 2 In order to keep it, the constant and constant temperature ㈣ solution can be supplied to the electrode tip ⑽ of the plating device 18. Fig. 7 and Fig. 7 show an example of a nail-cleaning and dry-free device 20 for cleaning the substrate ⑺㈣), drying the substrate w. In other words, the cleaning and drying device 20 is firstly subjected to chemical cleaning and pure water cleaning, and then completed by rotating the main shaft. The device for completely drying and cleaning the substrate w includes: an edge portion holding the substrate w The substrate stage 422 of the central holding mechanism 420, and the substrate mounting / unloading lifting plate 424 which executes the switch of the clamping mechanism 420. 315432 35 200423201 The substrate stage 422 is connected to the upper end of the spindle 426 which rotates at high speed in accordance with the driving of a spindle rotation motor (not shown). Further, around the substrate w held by the holding mechanism 42, a cleaning cup d for preventing scattering of the processing liquid is arranged. The cleaning cup 428 moves up and down in response to the operation of a cylinder (not shown). Further, the washing and drying device 20 includes a chemical liquid nozzle 43 for supplying the processing liquid to the surface of the substrate w held by the holding mechanism 420, and a plurality of pure water nozzles for supplying pure water to the back of the substrate w. 432: and a pen-shaped washing sea, which is arranged above the substrate w held by the holding mechanism 420 and is rotatable, 434. The cleaning sponge 434 is provided at the free end of a swing arm 436 that can be swung horizontally. A clean air introduction port 8 is also provided on the upper part of the washing and drying device 20 so that α clean air is introduced into the device. In the cleaning and drying device 20 configured as described above, the substrate w is held and rotated by the holding mechanism 420, and the rotary arm 436 is rotated while supplying the treatment liquid from the chemical liquid nozzle 430 to the cleaning sponge 434, while The cleaning sponge 434 wipes the surface of the substrate w to clean the surface of the substrate w. Then, pure water is supplied from the pure water nozzle 432 to the back surface of the substrate w, so that the pure water sprayed from the 'water nozzle 432' also cleans the moon surface of the substrate W at the same time. The substrate W thus cleaned is spin-dried by rotating the spindle 426 at a high speed. FIG. 8 shows an example of the bevel etching and back surface cleaning device 22. 1Slope etching and backside cleaning device 2 2Simultaneously etching ㈣7 (see 1B and backside cleaning) attached to the edge (bevel) portion of the substrate at the same time, and to suppress the natural oxidation of copper on the circuit forming portion on the substrate surface The grower of the film has. It is located inside the bottomed cylindrical waterproof cover 920, with the base plate 36 315432 200423201 w facing upward and at a plurality of points along the circumferential direction of the periphery by rotating the central head; 921 is held horizontally to perform Substrate stage 922 rotating at high speed; a central spray purple 924 disposed above a substantially central portion of the substrate w surface side held by the substrate substrate 922; and a peripheral nozzle 926 disposed above the peripheral portion of the substrate w. The central nozzle 924 9% of the nozzles of the peripheral portion are arranged downward, and the nozzles 928 of the moon portion are arranged upward, and are located approximately at the center of the back side of the substrate w: square. The peripheral nozzles 926 are formed in the diameter direction of the substrate w and It can move freely in the height direction. The perimeter nozzle 926 is formed so that it can be positioned at an arbitrary position from the outer peripheral end surface of the substrate in the center 邛 direction, and its moving width L is matched with the large U use target of the substrate W. It can be arbitrarily set. Generally, the edge width C is set in the range of 21 to 5 bands. As long as the amount of fluid from the f surface to the surface is a non-problematic rotation speed with i, the set cutting edge can be removed. The steel layer and the like within the width c. Next, a cleaning method using the inclined surface etching backside cleaning device 22 will be described. First, the substrate W is held horizontally on the substrate table 922 by rotating the chuck 921, and horizontally rotated. The substrate stage 922 is an integrated substrate W. In this state, an acid solution is supplied from the central nozzle 924 to the center portion of the surface t of the substrate w. The acid solution may be a non-oxidizing acid, and for example, fluoric acid, hydrochloric acid, and sulfuric acid may be used. , Citric acid, oxalic acid, etc. On the other hand, the obituary shift part sprays 926 continuously or intermittently to the substrate w to give an oxidant solution. The oxidant solution can be ozone water, hydrogen peroxide water, nitric acid water, sodium hypochlorite water, etc. By this means, the copper layer formed on the upper and lower sides of the 315432 37 200423201 surface and the end surface of the cutting edge width c area on the periphery of the substrate W is rapidly oxidized by the oxidant solution. At this time, the acid solution diffused to the entire substrate surface supplied from the central nozzle 924 is dissolved and removed by the button. As described above, the acid solution and the oxidant solution are mixed at the periphery of the substrate, and the mixed water is removed from the substrate in advance. In comparison with case 2 where the mouth is supplied, a steep Λshaw's profile can be obtained. At this time, the concentration of copper and the engraving rate of copper are determined. In addition, the natural oxidation of copper is formed on the circuit forming portion on the substrate surface. During the film formation, the natural oxide film was immediately removed by the acid solution spreading over the entire surface of the substrate with the rotation of the substrate and could not grow. After stopping the supply of the acid solution from the central nozzle 924, the oxidant solution from the peripheral nozzle 926 was stopped. The supply can oxidize the exposed stone and suppress the adhesion of copper. On the other hand, the oxidized Shi Xi, which is alternately supplied, is specifically oxidized with an oxidant, and the surface oxidation is more ideal. On the substrate surface side, the stoppage of the etchant solution is required for the manufacturing process.

，從背部喷嘴928向基板背面中央部同時或 劑溶液和氧化矽膜蝕刻劑。藉此可連同基板 溶液使以金屬狀附著在基板w背面側的銅 氧化矽膜蝕刻劑予以蝕刻去除。又採用供給 劑溶液作為該氧北劑溶液，在減少藥品的種 再者可使用氟酸作為氧化矽膜蝕刻劑，若 酸溶液也使用氟酸的話可減少藥品的種類。 氧化劑的供給則可獲得疏水面，而若先停止 可獲得飽水面（親水面），也可調整對應之後 背面。 e如此，將酸溶液亦即蝕刻液供給到基板w，並去除殘 留在基板W 4面的金屬料之後，再供給純水，進行更換 純水去除御m ’之後進行旋轉乾燥。以上述方式同時進 315432 38 200423201 行基板表面周邊部的切邊寬度C内之銅層去除和去除背面 的銅污染’該種處理例如可在8G秒以内完成。又雖然:任 意（2至5mm)設定邊緣的切邊寬度 又 Ί一 f s刻的所需時間盘 切除寬度不相干。 w與加熱板1004之間的氣體導入管1〇1〇,以及將從該氣 體導入管1G1G導人並流通於基板w與加熱板丨⑻4之間的 氣體予以排氣的氣體排氣管1012，係配置在包夾加熱板 1004且互相對峙的位置。 第9圖及第1〇圖係顯示熱處理（退火）裝置％。該熱 處理裝置2 6係位於具有使基板w進出之間丨(^的爐… (chamber)丨002内部，上下配置有例如將基板％加熱到4〇〇 °c的加熱板1004,以及例如流入冷卻水冷卻基板w的冷 卻板1006。又配置有複數個昇降自如的昇降銷1〇〇8,以7貫 穿冷卻板1〇〇6内部往上下方向延伸，且上端用以載置保持 基板W。再者，將防止氧化用之氣體導入於退火時的基板 氣體導入管1〇1〇係以混合器〗020將流通在内部具有 過濾、器1014a的氮（N2)氣導入路1016内的氮氣，和流通在 内部具有過濾器1()14b的氫（A)氣導入路1〇16内的氫氣加 以混合，並連接到流通有由該混合器1〇2〇所混合之氣體的 混合氣體導入路1 022。 藉此，利用昇降銷1008保持通過門1〇〇()搬進到爐 1002内部的基板w，使昇降銷1〇〇8上昇到以該昇降銷1〇〇8 保持的基板W與加熱板1004的距離例如為〇丨至i 〇mm 左右為止。在此狀態下，藉由加熱板丨〇〇4將基板w加熱 315432 39 200423201 到例如變成4 0 0 C，同時從氣體導入管1 〇丨〇導入防止氧化 用之氣體流通在基板W與加熱板1 〇〇4之間並從氣體排氣 官1 〇 1 2排氣。藉此，一邊防止氧化一邊對基板w進行退 火處理，例如持續數十秒至6 〇秒左右該退火處理而完成退 火作業。基板的加熱溫度可選擇100至6〇〇t。 退火元成後’使昇降銷1008下降到以該昇降銷1〇〇8 保持的基板W與冷卻板1〇〇6的距離例如為〇至〇 5mm左 右為止。在此狀態下，藉由將冷卻水導入於冷卻板1〇〇6 内，使基板w的溫度變成100。(：以下，例如以1〇至6〇秒 程度冷卻基板，並將該冷卻完成後的基板搬運到下一製 程。 又在此例中，係流通將混合氮氣與數％氫氣的混合氣 體以作為防止氧化用的氣體，但亦可只流通氮氣。 第11圖至第1 7圖係顯不進行基板的無電解電鍍的前 處理之前處理裝置28。該前處理裝置28係具有裝設在框 架50上部的固定框52，及對該固定框52可相對性上下移 動的移動框54，在該移動框54係懸掛支撐有處理頭6〇， 該處理頭60具有下方開口的有底圓筒狀之殼體部％與基 板托架（holder)58。亦即，在移動框54裝設有頭旋轉用伺 服馬達62,在該伺服馬達62下方延伸的輸出軸（中空軸）64 之下端連結有處理頭60的殼體部56。 在該輸出軸64的内部，如第14圖所示，透過鍵槽 (spline) 66插裝有與該輸出軸64 —體旋轉的垂直轴68， 在該垂直軸68下端，透過球接頭70連結有處理頭6〇的基 315432 40 200423201 板托架5 8。每 I 4c > 軸68上於/ 8係位於殼體部56内部。又垂直 上、係透過軸承72及托架 動框54的固宏产曰政、 運結固疋在移 衣幵牛用A缸74。藉此，伴隨今昇 缸74的作翻，千* 土 卞喊口系汁降用汽 動。 垂直軸“形成與輸出軸“為獨立之上下移 再者，在固定框52奘#古知u π + η, ^ ^ 哀°又有朝上下方向延伸而形成導 :4昇降的線型導執(linear guide)76 =圖示)的作動’移動框54以線型導執76為導引 二處理頭60之殼體部56的周壁設有用以將基板W插 的\ 4的ί板***窗仏。又在處理頭60之殼體部56 、下P如第15圖及帛16圖所示，在例如PEEK製的主 框（maln-frame)80，與例如聚乙烯製的導框a之間配置有 周邊部被夾住的㈣環84。㈣料則抵接在基板w 下面的周邊部，用以密封此處。 另一方面，在基板托架58的下面周邊部固裝有基板 固定環86 ’透過配置在該基板托架則基板固定環86内 部之彈菁88的彈性’圓柱狀的推桿（pUSher)90從基板固定 環86的下面向下方突出。此外，在基板托架58的上面與 设體部56上壁部之間，配置有將内部密封成氣密性的例如 由鐵弗龍(註冊商標)製的彎曲自如之圓筒狀風箱 (bellows)92 〇 藉此，於使基板托架58上昇的狀態下，從基板*** 窗56a將基板W***殼體部56的内部。如此一來，該基 315432 41 200423201 板W將被導引並定位在設於導框82内周面之傾斜（taper) 面82a ’而被載置在密性環84上面的預定位置。於此狀態 下’降下基板托架5 8，使該基板固定環86的推桿90接觸 基板w的上面。然後，再透過降下基板托架，以彈簧 88的彈性往下方按壓基板w，藉此以密性環84壓接基板 W表面（下面）的周邊部，一邊密封此處，一邊將基板w夾 持保持在殼體部56與基板托架58之間。 再者，如上所述以基板托架58保持基板W的狀態下， 若驅動旋轉頭用之伺服馬達62，則該輸出軸64與插裝在 該輸出軸64的垂直軸68將透過鍵槽66 一體旋轉，藉此， 殼體部5 6與基板托架5 8也一體旋轉。 位於處理頭60下方設置有上方具開口之外槽⑺⑹與 内才曰100b的處理槽1 〇〇，而其内徑比該處理頭的外徑 稍大。在處理槽1〇〇的外周部，旋轉自如地支撐有裝設在 蓋體1〇2的一對㈣104。X於㈣104 -體連結有曲軸 係旋轉自如地連結在移動蓋體From the back nozzle 928 to the center of the back surface of the substrate, the solution and the silicon oxide etchant are simultaneously applied. Thereby, the copper silicon oxide film etchant adhered to the back surface of the substrate w in a metal shape can be removed by etching together with the substrate solution. The use of a dopant solution as the oxygen agent solution also reduces the number of chemicals. In addition, fluoric acid can be used as a silicon oxide film etchant. If the acid solution also uses fluoric acid, the types of chemicals can be reduced. The supply of the oxidant can obtain a hydrophobic surface, and if it is stopped first, a saturated surface (hydrophilic surface) can be obtained, and the back surface can be adjusted. In this way, after the acid solution, that is, the etching solution is supplied to the substrate w, the metal material remaining on the surface of the substrate W 4 is removed, and then pure water is supplied, the pure water is replaced, and the spin-drying is performed. Simultaneously proceeding in the above manner 315432 38 200423201 Lines of the copper layer within the cutting edge width C of the peripheral surface portion of the substrate and the copper contamination on the backside are removed. This type of processing can be completed within 8G seconds, for example. Although: arbitrary (2 to 5mm) set the trimming width of the edge, and the time required to cut the fs slab is irrelevant. A gas introduction pipe 1010 between the w and the heating plate 1004, and a gas exhaust pipe 1012 that guides the gas introduced from the gas introduction pipe 1G1G and circulates between the substrate w and the heating plate 板 4, They are arranged at positions where the heating plates 1004 are sandwiched and face each other. 9 and 10 show the heat treatment (annealing) device%. The heat treatment device 26 is located inside a furnace having a substrate w and a substrate ch (chamber) 002, and a heating plate 1004 for heating the substrate to 400 ° C is arranged above and below, for example, inflow cooling The cooling plate 1006 of the substrate w is water-cooled. A plurality of lifting pins 1008 that can be raised and lowered are arranged and extend through the inside of the cooling plate 1007 in a vertical direction, and the upper end is used for holding and holding the substrate W. The gas for preventing oxidation is introduced into the substrate gas introduction pipe 10 during annealing, and the nitrogen gas flowing through the nitrogen (N2) gas introduction path 1016 having the filter and the device 1014a is mixed with the mixer 020, and Hydrogen flowing through the hydrogen (A) gas introduction path 1016 having the filter 1 () 14b inside is mixed and connected to the mixed gas introduction path 1 where the gas mixed by the mixer 1020 flows. 022. With this, the lifting pin 1008 is used to hold the substrate w carried into the furnace 1002 through the door 100 (), and the lifting pin 1008 is raised to the substrate W held by the lifting pin 1008 and heated. The distance of the plate 1004 is, for example, about 〇 丨 to i 〇mm. In this state The substrate w is heated 315432 39 200423201 to a temperature of, for example, 400 C by a heating plate 丨 〇4, and at the same time, a gas for preventing oxidation is introduced from the gas introduction pipe 1 〇 丨 〇 to circulate the substrate W and the heating plate 1 〇 04 The gas is exhausted from the gas exhausting unit 102. Thereby, the substrate w is annealed while being prevented from being oxidized. For example, the annealing process is completed for several tens of seconds to 60 seconds to complete the annealing operation. The substrate is heated The temperature can be selected from 100 to 600 t. After the annealing element is formed, the lift pin 1008 is lowered to a distance between the substrate W held by the lift pin 1008 and the cooling plate 1006, for example, about 0 to 0.05 mm. In this state, the temperature of the substrate w is set to 100 by introducing cooling water into the cooling plate 1006. (hereinafter, the substrate is cooled, for example, in the range of 10 to 60 seconds, and the cooling is completed. The subsequent substrate is transferred to the next process. In this example, a mixed gas in which nitrogen is mixed with several% hydrogen is used as a gas for preventing oxidation, but only nitrogen may be passed. Figs. 11 to 17 The system does not perform electroless plating of the substrate Pre-processing device 28. The pre-processing device 28 has a fixed frame 52 mounted on the upper portion of the frame 50, and a moving frame 54 which can be relatively moved up and down with respect to the fixed frame 52. The moving frame 54 is supported by the suspension. The processing head 60 includes a bottomed cylindrical housing portion and a substrate holder 58 which are opened below. That is, a head rotation servo motor 62 is mounted on the moving frame 54. The lower end of the output shaft (hollow shaft) 64 extending below the servo motor 62 is connected to the housing portion 56 of the processing head 60. The output shaft 64 is inserted through a spline 66 as shown in FIG. 14 A vertical axis 68 that rotates integrally with the output shaft 64 is connected to a base 315432 40 200423201 plate holder 58 of the processing head 60 through a ball joint 70 at a lower end of the vertical axis 68. Each I 4c > shaft 68 is located inside the housing portion 56. In addition, Guhong Industry Co., Ltd., which passes through the bearing 72 and the bracket moving frame 54 vertically, is fixed in the A-cylinder 74 for moving yak. With this, with the turning of the Jinsheng cylinder 74, the Qian * soil clamour calls for steam-down steam. The vertical axis "formation and output axis" is independent and move up and down, and in the fixed frame 52 奘 # 古 知 u π + η, ^ ^ wai ° It also extends up and down to form a guide: 4 lift linear guide ( Linear guide (76 = illustration). The moving frame 54 uses the linear guide 76 as a guide, and the peripheral wall of the housing part 56 of the second processing head 60 is provided with a window plate for inserting the substrate W. Further, as shown in FIG. 15 and FIG. 16, the housing part 56 and the lower part P of the processing head 60 are disposed between, for example, a main frame 80 made of PEEK and a guide frame a made of polyethylene, for example. The cymbal ring 84 is pinched around the periphery. The abutment is abutted to the peripheral portion below the substrate w to seal it. On the other hand, a substrate fixing ring 86 'is fixed to a peripheral portion of the lower surface of the substrate holder 58, and an elastic' cylinder-shaped 'push rod 90 is passed through the elastic ring 88 disposed inside the substrate fixing ring 86. It protrudes downward from the lower surface of the board | substrate fixing ring 86. Further, between the upper surface of the substrate bracket 58 and the upper wall portion of the body portion 56, a freely curved cylindrical bellows (for example, made of Teflon (registered trademark)) that hermetically seals the inside is disposed ( Bellows) 92. With this, the substrate W is inserted into the housing portion 56 from the substrate insertion window 56a while the substrate holder 58 is raised. In this way, the base 315432 41 200423201 plate W will be guided and positioned on a tapered surface 82a ′ provided on the inner peripheral surface of the guide frame 82 and placed on a predetermined position above the dense ring 84. In this state, the substrate holder 58 is lowered, and the pusher 90 of the substrate fixing ring 86 contacts the upper surface of the substrate w. Then, by lowering the substrate holder and pressing the substrate w downward with the elasticity of the spring 88, the peripheral part of the surface (lower surface) of the substrate W is crimped with the tight ring 84, and the substrate w is clamped while sealing here It is held between the case portion 56 and the substrate holder 58. Further, as described above, when the substrate W is held by the substrate holder 58 and the servo motor 62 for the rotary head is driven, the output shaft 64 and the vertical shaft 68 inserted in the output shaft 64 are integrated through the keyway 66. As a result of the rotation, the housing portion 56 and the substrate holder 58 also rotate integrally. Below the processing head 60, there is provided a processing tank 100 with an open outer groove and an internal opening 100b, and the inner diameter is slightly larger than the outer diameter of the processing head. A pair of cymbals 104 mounted on the cover body 102 are rotatably supported on the outer periphery of the processing tank 100. X 于 ㈣104 -Crankshaft is connected to the body

的喷嘴板11 2。 106，該曲軸ι〇6的自由端， 用汽缸108的拉桿（r〇d) 11〇。 1 〇8的作動，蓋體1 〇2係槿yThe nozzle plate 11 2. 106. The free end of the crankshaft ι06 is a lever 108 of the cylinder 108. Actuation of 1 〇8, the cover 1 〇2 is hibiscus

噴嘴板124具有伴隨藥液幫浦 方、處理槽1⑼的内槽1 00b之内部， 液幫浦1 22的驅動將所供給的來自 315432 42 200423201 某/夜槽1 20的藥液朝上方喷射的複數個喷射喷嘴124a，而 /嘴射噴嘴1 24a則以較均等分佈的狀態配置在遍佈整個 内槽100b的橫切面。在該内槽i00b底面連接有將藥液（排 液）排出到外部的排水管j 26，在該排水管丨26的中途，介 裝有三通閥128，透過連接在該三通閥128之一個出口埠 的回歸官1 3 〇 ’視需要將該藥液（排液）送回藥液槽丨2 〇而予 以再利用。又在本例中，設在蓋體j 〇2表面（上面）的噴嘴 板112，例如係連接至供給純水等清洗液的清洗液供給源 132;又在外槽10(^之底面也連接有排水管m。 藉此，降下保持基板的處理頭6〇，以處理頭6〇堵塞 之方式覆蓋處理槽100之上端開口部，於此狀態下，透過 從配置在處理槽100内槽10扑的内部之喷嘴板124的噴射 噴嘴124a朝基板射藥液’可均句地噴射藥液於整個 基板W白勺下面（處理面），並且能防止#液往外部飛散而從 排水管126將藥液排出到外部。然後，在使處理頭6〇上昇 且以蓋體102堵塞處理槽1〇〇之上端開口部的狀態下，朝 以處理頭6M呆持的基板w，藉由從配置在蓋體⑽上面 的喷嘴板U2之㈣噴嘴U2a喷射清洗液，進行殘留在基 板表面的藥液清洗處理（洗淨處理），而且該清洗液流料 槽1〇〇a與内槽100b間，並經排水管m排出，所以可防 止流入内槽100b的内部，使清洗液不會混入藥液。 依照該前處理裝置28，如第u圖所示，於上昇處理 頭60的狀態了，將基板％插人其内部並予以保持，之後 如第12圖所示，使處理頭6〇降下使位於覆蓋處理請 315432 43 200423201 開口部的位置。然後，透過旋轉處理頭6。，一邊旋 所保持的基板邊朝基板W噴射來自 液，將：：：Γ内部的喷嘴板124之嘴射噴嘴i24a的藥 二：二液均勾地嘴射在整個基板w。又，使處理頭6。 的蓋體：=定1 置，如第13圖所示，將位於退避位置 售，/ /到後盍處理槽100上端開口部的位置。然 後，在此狀態下，朝卢 、 …、 板W，從紀署/ - 处頭加以保持並令其旋轉的基 噴M1G2上面的噴嘴板112之噴射噴嘴112a 用二:错此，可將利用藥液的基板W處理，以及利 2洗液的清洗處理，在不混雜2種液體的情況下進行處 再者’透過調整處理頭60的下降位 理頭60所保持的基板Wik ^亥處 μ 員角板1 24的距離，可杯音纲 正從噴嘴板1 24之噴射噴嘴丨^ ^ " 的區域與噴射壓力^ 所贺射的樂液碰到基板貿 g. μ、· 在此，當循環使用藥液等的前處理液 ^ 有效成伤之同時，因為有附著在基板 前處理液組成_：：=出，因此最好一併設置分析 _ 外加不足部分之前處理液管理裝置（未 圖不）。具體而言，使用、太々 # m 在h淨化的藥液，因以酸或鹼為主， ;=PH/補給與預定值之差距的減少部分之同 ..^ h的液面計補給減少量。又關於觸 炼/夜万面’例如於酸性^ 酸的量，或用滴定法==情況下，可以。H測試 給減少量。 i濁度法亀量，以同樣方式補 315432 44 200423201 第18圖乃至第24圖係顯示無電解電鍍裝置3〇。該無 電解電鍍裝置30係用以形成第1D圖所示之保護膜9者， 具有電錢槽200(參照第22圖及第24圖），以及配置在該電 鍵槽200上方裝卸自如地保持基板w的基板頭2〇4。 基板頭204係如第18圖詳示，具有殼體部23〇與頭 部232，該頭部232主要是由吸附頭234與圍繞該吸附頭 234周圍的基板座236所構成。而在殼體部23〇内部收納 有旋轉基板用馬達238與驅動基板座用汽缸24〇，該旋轉 基板用馬達238的輸出軸（中空軸）242的上端與下端，係分 別連接在旋轉接頭（rotary j0int) 244與頭部232的吸附頭 234,驅動基板座用汽缸24〇的連桿係連結在頭部232的基 板座236。又於殼體部230内部，設置有機械性限制基板 座236上昇的制動器（st〇pper)246。 在此，於吸附頭234與基板座236之間，係採用與前 述一樣的鍵槽構造，伴隨驅動基板座用汽缸24〇的作動， 基板座236與吸附頭234相對地上下移動，但當因旋轉基 板用馬達23 8之驅動而使輸出軸242旋轉時，伴隨該輸出 軸242的旋轉，形成吸附頭234與基板座236 一體旋轉的 構成。 在吸附頭234的下面周邊部，如第19圖乃至第2ι圖 所示，透過壓環251裝設有以下面作為密封面吸附保持基 板W的吸附環250,在該吸附環25〇之下面，於圓周方= 連續所設的凹狀部250a與延伸在吸附頭234内的真空線° 252，係透過設在吸附環250的連通孔25〇b互相連通。藉 315432 45 200423201 此透過真空吸引凹狀部250a内，來吸附保持基板w， 如此，透過以小寬度（直徑方向）圓周狀的真空吸引保持基 板W，可將真空對基板w的影響（彎曲）抑制到最小限度， 而且透過將吸附環250浸潰在電鍍液（處理液）中，不僅X對 板表面（下面）’而且對邊緣也全部能浸潰在電錢液。 基板W的排出係藉由對真空線252供給氮（N2)來進行。 另方面，基板座236係形成下方有開口的有底圓筒 _狀，在其周壁設有***基板w於内部的基板***窗 在下端設有向内方突出的圓板狀爪部254。又在該爪部 的上部設有在内周面具有導引基板w的傾斜面25以之凸 起片256 。 藉此，如第19圖所示，於降下基板座236的狀態下， 攸基板***窗236a將基板w***基板座236的内部。如 此來，该基板w由凸起片256的傾斜面256a所導引定 位’而載置保持在爪部254的上面預定位置。在該狀態下， •使基板座236上昇’如第2G圖所示’將載置保持在該基板 座236之爪部254上的基板W上面抵接在吸附頭234的吸 附環250。接著，透過真空線252真空吸引吸附環25〇的 凹狀部250a，而將基板W上面的周邊部一邊密封在該吸 附環250的下面，一邊吸附保持基板w。然後於進行電鍍 處理時，如第21圖所示，將基板座236降下數历瓜，並從 2部254分離基板W，形成僅以吸附環25〇吸附保持的狀 態。藉此，基板w表面（下面）的周邊部，因爪部254之存 在而得以防止不被電鍍。 315432 46 200423201 “第22圖洋不電鍍槽2〇〇，該電鍍槽係連接在底部 之電鑛液供給管308(參照第24圖），在周壁部設有電鍵液 回收溝在電鍍槽的内部配置有2片整流板加、 2 6 4 ’用以穩定於此聋月匕方、户 朝上方机動的電鍍液流向，更於底部設 置溫度測試器266,以測試導入電鑛槽2〇〇内部的電鐵液 液溫。又於比電鑛槽200的周壁外周面之由電鐘槽200所 保持的電鍍液液面略為上方處，設置有朝直徑方向的略斜 上方往電鍵槽2〇0内部噴射由阳為6至7.5的中性液所組 成的停止液(例如純水)的喷射噴嘴268。藉此，於電鍍完成 後，將以頭部232所保持的基板W提昇到比電鍍液的液面 稍上方並暫時停止，於此狀態下，朝基板评喷射來自喷射 赁嘴268的純水（停止液）立即冷卻基板％，藉此可以防止 由殘留在基板W上的電鍍液進行電錢。 再者，於電鍍槽200的上端開口部，設置開關自如的 電鍍槽蓋270,以在空轉時等的不進行電鑛處理的情況， 關閉電鑛槽·的上端開口部而防止電鐘液之從 2〇〇的蒸發。 該電錢槽㈣係如第24圖所示，於底部連接有從電 鍍液儲槽延伸，中途介裝有電鐘液供給幫浦304盘三通閥 的電鑛液供給管·。藉此電鑛處理中，於電鑛槽 的内部，透過從其底部供給電鑛液，並從將溢出的電 鍵液從電鍍液回收溝260回收到電鐘液儲槽3〇2，可使電 鍍液形成循環。又於三通閥3〇6的一個出口埠，連接有回 到電鍍液儲槽302的電鐘液回流管312。藉此，即使在等 315432 47 200423201 待電鍍時，也可使電鍍液形 體系。如此透過電鍍液循環 槽3 02内的電鍍液，與只單 可減少電鍍液濃度的下降率 量。 成循環，因而構成電鍍液循環 體系，藉由經常循環電鍍液儲 純儲存電鍍液的情況相比較， ，而能增加基板W的可處理數 尤其在本例中，透過控制電鍍液供給幫浦304,可個 別地=定等待電鑛時及電鍵處理時循環的電鍍液流量。亦 即，等待電鍍時的電鍍液循環流量，例如可設定為2至 2〇L/min，電鍍處理時電鍍液的循環流量，例如可設定為〇 iOL/min。藉此’可確保等待電鍍時電錢液的大:環流 量，而將電解池（cell)内的電鍍浴之液溫維持於一定；在電 鍍處理時，可將電鍍液的循環流量變小，而能使更均勻膜 厚的保護膜（電鍍膜）成膜。 、 設置在電鍍槽200之底部附近的溫度測試器266，為 測試導入電鍍槽200内部的電鍍液液溫，以該測試結果為 基礎’控制下述加熱器3 1 6及流量計3 1 8。 亦即在本例中設置有：加熱裝置322，使用另設的加 熱器3 1 6使之昇溫而將流過流量計3丨8的水使用作為熱媒 體’以將熱交換器320設置在電鍍液儲槽302内的電鍵液 中間接性地加熱該電鍍液；以及攪拌幫浦324，用以循環 稅掉電鐘液儲槽3 0 2内的電錢液。此乃是於無電解電鍵 日守’在南溫（約8 0 °C左右）下使用的電鍵液，而對應其而設 者，依照本方法，與線内加熱方式相比較，可防止不必要 的物質等混入非常精密的電錢液。 48 315432 200423201 第23圖係詳示附設在電鍍槽2〇〇側方的洗淨槽逝， 她淨槽202之底部，朝上方喷射純水等清洗液的複數 嘴280係裝設配置於噴嘴板282上，該噴嘴板282 係連、。在噴嘴上下軸284的上端。又該噴嘴上下軸284係 透過改變噴嘴位置調整用螺絲287與和該螺絲287螺 Γ 288間之螺合位置而上下移動，藉此，可調整喷时 纽置在射㈣嘴28GJ1㈣基板w之距離於最 ^在洗淨槽繼周壁外周面的位於比嘴射喷嘴咖更 上方處設置有頭洗淨喷嘴286，以朝直徑方向的略下方， ㈣喷射純水等洗淨液，並將洗淨液喷射於 基板頭204之頭部232的至少接觸到電鍍液的部分。 該洗淨槽202係將以基板頭2Q4之頭部232所 基板W配置在洗淨槽2G2内的預定位置，並 扇喷射純水等洗淨液（清洗液）以洗淨（清洗）基板 此寺從頭洗淨喷嘴286同時噴射純水等洗淨液，並以 Γ夜ϊ淨基板頭綱之頭部232之至少接觸到電鍍液的^ 刀’猎此可防止浸潰於電鍍液之部分蓄積析出物。The nozzle plate 124 has an inner tank 100b accompanying the liquid pump side and the processing tank 1⑼. The drive of the liquid pump 12 22 sprays the supplied chemical liquid from 315432 42 200423201 / night tank 1 20 upward. The plurality of injection nozzles 124a and the / nozzle injection nozzles 1 24a are arranged in a more evenly distributed state across the entire cross section of the inner groove 100b. On the bottom surface of the inner tank i00b, a drain pipe j 26 for discharging a chemical solution (drain) to the outside is connected. In the middle of the drain pipe 26, a three-way valve 128 is interposed, and one of the three-way valves 128 is connected through The returning officer at the exit port 130 ′ will return the medicinal solution (drain) to the medicinal solution tank 20 as needed and reuse it. Also in this example, the nozzle plate 112 provided on the surface (upper surface) of the cover body 〇2 is, for example, connected to a cleaning liquid supply source 132 that supplies a cleaning liquid such as pure water, and is also connected to the bottom surface of the outer tank 10 (^ Drain pipe m. As a result, the processing head 60 holding the substrate is lowered, and the opening at the upper end of the processing tank 100 is covered so that the processing head 60 is blocked. The spray nozzle 124a of the inner nozzle plate 124 shoots the chemical liquid toward the substrate. The chemical liquid can be uniformly sprayed below the entire substrate (the processing surface), and can prevent the liquid from scattering to the outside and the chemical liquid can be discharged from the drain pipe 126. It is discharged to the outside. Then, while the processing head 60 is raised and the upper opening of the processing tank 100 is blocked by the cover body 102, the substrate w held by the processing head 6M is placed on the cover body. The upper nozzle plate U2 and the upper nozzle U2a spray the cleaning liquid to perform the chemical liquid cleaning treatment (cleaning treatment) remaining on the substrate surface, and the cleaning liquid flows between the 100a and the inner tank 100b and is drained. The pipe m is discharged, so that it can be prevented from flowing into the inner tank 100b According to the pre-processing device 28, as shown in Fig. U, the processing head 60 is raised, and the substrate% is inserted into the inside and held, and then shown in Fig. 12 The processing head 60 is lowered so as to cover the opening position of the processing head 315432 43 200423201. Then, the processing head 6 is rotated, and the substrate is sprayed from the liquid toward the substrate W while rotating the held substrate 6. The nozzle 2 of the nozzle plate 124 shoots the medicine of the nozzle i24a: the two liquids are shot on the entire substrate w. The cover of the processing head 6. is set to = 1, as shown in Figure 13, it will be located in the retreat. Position for sale, // to the position of the opening at the upper end of the rear cymbal treatment tank 100. Then, in this state, hold the Rotor, ..., and the plate W from the discipline inspection office--and keep it on the base spray M1G2 The nozzle plate 112a of the nozzle plate 112 is used for two: wrongly, the substrate W using the chemical solution can be processed, and the cleaning process of the cleaning liquid 2 can be processed without mixing the two liquids. The lower position of the head 60 is the substrate Wik held by the head 60. The distance from the corner plate 1 to 24, but the cup sound Gang is being ejected from the area of the nozzle plate of the nozzle plate 1 24 ^ ^ " and the injection pressure ^ The concealed music liquid hits the substrate trade g. Μ, · Here, When the pre-treatment liquid such as chemical solution is circulated and used effectively, at the same time, it will be damaged, because there is a composition of pre-treatment liquid attached to the substrate _ :: = out, so it is best to set up analysis _ plus the pre-treatment liquid management device (not enough) (Figure not). Specifically, the use of Taiji # m in the purification of the medicinal solution, because the acid or alkali is the main,; = PH / supply and the reduction of the difference between the predetermined value is the same .. ^ h solution Decrease in surface supply. It is also possible to use the "trivalent / yenwan noodles", for example, in the amount of acid or acid, or in the case of titration ==. H test gives a reduction. The turbidity method is used to fill in the same way. 315432 44 200423201 Figures 18 to 24 show the electroless plating equipment 30. The electroless plating device 30 is used to form the protective film 9 shown in FIG. 1D, and has an electric money slot 200 (see FIGS. 22 and 24), and a substrate that is detachably disposed above the electric key slot 200 and is detachably held thereon. w 的 板 头 204。 W substrate substrate 204. The substrate head 204 has a housing portion 23 and a head portion 232, as shown in detail in FIG. 18. The head portion 232 is mainly composed of a suction head 234 and a substrate holder 236 surrounding the suction head 234. In the housing portion 23, a rotary substrate motor 238 and a drive substrate holder cylinder 24 are housed. The upper and lower ends of the output shaft (hollow shaft) 242 of the rotary substrate motor 238 are connected to the rotary joint ( The rotary j0int) 244 and the suction head 234 of the head 232 are connected to the base plate 236 of the head 232 by a connecting rod of a cylinder 24o for driving the base plate. A stopper 246 that mechanically restricts the substrate holder 236 from rising is provided inside the housing portion 230. Here, the same key groove structure as described above is used between the suction head 234 and the substrate holder 236. With the actuation of the substrate holder cylinder 24o, the substrate holder 236 and the suction head 234 move up and down relatively. When the output shaft 242 is driven by the substrate motor 23 8, the suction head 234 and the substrate holder 236 are configured to rotate together with the rotation of the output shaft 242. As shown in FIG. 19 to FIG. 2i, the peripheral portion of the lower surface of the adsorption head 234 is provided with an adsorption ring 250 that adsorbs and holds the substrate W with the lower surface as a sealing surface through the pressure ring 251. Below the adsorption ring 25o, On the circumferential side = the recessed portions 250 a provided continuously and the vacuum line ° 252 extending inside the suction head 234 communicate with each other through the communication hole 25 0b provided in the suction ring 250. By using 315432 45 200423201 to suck and hold the substrate w through the vacuum suction concave portion 250a, in this way, by sucking and holding the substrate W with a circular vacuum with a small width (diameter direction), the influence of the vacuum on the substrate w can be curved. It is suppressed to the minimum, and by immersing the adsorption ring 250 in the plating solution (treatment liquid), not only the X surface of the plate (underside) but also the edges can be immersed in the liquid electrolyte. The substrate W is discharged by supplying nitrogen (N2) to the vacuum line 252. On the other hand, the substrate holder 236 is formed in a bottomed cylindrical shape with an opening below, and a substrate insertion window for inserting the substrate w inside is provided on the peripheral wall, and a disc-shaped claw portion 254 protruding inward is provided at the lower end. Further, on the upper portion of the claw portion, a protruding piece 256 having an inclined surface 25 having a guide substrate w on the inner peripheral surface is provided. Thereby, as shown in FIG. 19, in the state where the substrate holder 236 is lowered, the substrate insertion window 236a inserts the substrate w into the substrate holder 236. In this way, the substrate w is guided and positioned by the inclined surface 256a of the protruding piece 256, and is held at a predetermined position above the claw portion 254. In this state, as shown in FIG. 2G, the substrate holder 236 is raised. The substrate W placed on the claw portion 254 of the substrate holder 236 is brought into contact with the suction ring 250 of the suction head 234. Next, the concave portion 250a of the suction ring 250 is vacuum-sucked through the vacuum line 252, and the peripheral portion on the upper surface of the substrate W is sealed to the lower surface of the suction ring 250 while the substrate w is sucked and held. Then, during the plating process, as shown in FIG. 21, the substrate holder 236 is lowered for a few seconds, and the substrate W is separated from the two sections 254 to form a state in which only the adsorption ring 250 is adsorbed and held. Thereby, the peripheral portion of the surface (lower surface) of the substrate w can be prevented from being plated due to the existence of the claw portion 254. 315432 46 200423201 "Figure 22 is a non-plating tank 200. This plating tank is connected to the bottom of the electric liquid supply pipe 308 (refer to Figure 24). A key liquid recovery groove is provided in the peripheral wall of the plating tank. It is equipped with 2 pieces of rectifier plates, which are used to stabilize the flow of the electroplating solution. The temperature tester 266 is set at the bottom to test the inside of the electric pit 200. The temperature of the electrolyte liquid. It is slightly higher than the electroplating liquid level held by the electric clock groove 200 on the outer peripheral surface of the peripheral wall of the electric ore tank 200. A slightly obliquely upward direction toward the key groove 200 is provided in the diameter direction. A spray nozzle 268 that sprays a stop liquid (e.g., pure water) composed of a neutral liquid of 6 to 7.5 internally. Thereby, after the completion of the plating, the substrate W held by the head portion 232 is raised to be higher than the plating liquid. The liquid surface is slightly above and temporarily stopped. In this state, pure water (stop liquid) from the spray nozzle 268 is sprayed toward the substrate, and the substrate is immediately cooled by%, thereby preventing the electroplating solution remaining on the substrate W from conducting electricity. In addition, at the upper opening of the plating tank 200, The electroplating tank cover 270 can be set freely to close the upper opening of the electric ore tank when the electric ore treatment is not performed during idling, etc., to prevent the evaporation of the electric clock liquid from 200. The electric money tank ㈣ As shown in Fig. 24, an electric mineral liquid supply pipe extending from the electroplating solution storage tank is connected to the bottom, and an electric clock liquid supply pump 304 three-way valve is installed in the middle. Inside the electric ore tank, by supplying electric ore liquid from its bottom, and recovering the spilled key liquid from the electroplating liquid recovery groove 260 to the electric clock liquid storage tank 302, the electroplating liquid can be circulated. An outlet port of the valve 306 is connected with a clock liquid return pipe 312 which returns to the plating liquid storage tank 302. Thus, even when waiting 315432 47 200423201 to be plated, the plating liquid system can be made. This allows the plating to pass through The electroplating solution in the liquid circulation tank 302 can reduce the amount of the decrease in the concentration of the electroplating solution. It forms a circulation, and thus forms the electroplating solution circulation system. Compared with the case where the electroplating solution is stored and stored in a pure circulation, It can increase the number of substrates that can be processed, especially in this case. In the example, by controlling the plating solution supply pump 304, the flow rate of the plating solution circulating while waiting for the electric ore and key processing can be individually set. That is, the circulating flow rate of the plating solution while waiting for the plating can be set to, for example, 2 to 2. 〇L / min, the circulating flow rate of the plating solution during the plating process, for example, can be set to 0 OL / min. This can ensure that the large amount of the electrolyte liquid while waiting for plating: the ring flow rate, and the plating in the electrolytic cell (cell) The temperature of the bath liquid is maintained constant; during the plating process, the circulating flow rate of the plating solution can be reduced, and a protective film (plating film) with a more uniform film thickness can be formed. 、 It is set near the bottom of the plating tank 200 The temperature tester 266 controls the heater 3 1 6 and the flow meter 3 1 8 to test the temperature of the plating liquid introduced into the plating tank 200 based on the test results. That is, in this example, a heating device 322 is provided, which is heated by using an additional heater 3 1 6 and the water flowing through the flow meter 3 丨 8 is used as a heat medium to set the heat exchanger 320 in the electroplating. The electroplating solution is indirectly heated in the key liquid in the liquid storage tank 302; and the stirring pump 324 is used to circulate and drain the electricity liquid in the electric clock liquid storage tank 302. This is the key liquid used in the non-electrolytic keypad Nishou 'at Nan temperature (about 80 ° C), and the corresponding one, according to this method, compared with the in-line heating method, can prevent unnecessary Materials, etc., are mixed into a very precise battery. 48 315432 200423201 Figure 23 shows the cleaning tank attached to the side of the plating tank 2000. The bottom of the cleaning tank 202 sprays cleaning liquid such as pure water upwards. 280 are installed on the nozzle plate. On the 282, the nozzle plate 282 is connected in series. At the upper end of the nozzle upper and lower shaft 284. The nozzle upper and lower shafts 284 move up and down by changing the screwing position between the nozzle position adjustment screw 287 and the screw 287 to the screw 287, thereby adjusting the distance of the nozzle 28GJ1 and the substrate w when spraying. A head washing nozzle 286 is provided on the outer peripheral surface of the washing tank subsequent to the peripheral wall of the washing tank, and is located above the nozzle jet nozzle. The washing nozzle 286 sprays washing liquid such as pure water slightly downward in the diameter direction, and cleans The liquid is sprayed on at least a portion of the head portion 232 of the substrate head 204 that is in contact with the plating solution. The cleaning tank 202 is configured by arranging the substrate W of the head 232 of the substrate head 2Q4 at a predetermined position in the cleaning tank 2G2, and spraying a cleaning liquid (cleaning liquid) such as pure water to wash (clean) the substrate. Temple cleaning nozzle 286 sprays cleaning liquids such as pure water at the same time, and uses a ^ blade to contact at least the head 232 of the substrate head outline of the substrate to contact the plating solution. This can prevent the accumulation of immersion in the plating solution. Precipitates.

置 W 於該種無電解電鑛裝置30，在使基板頭204 以上述的方式使基板頭204之頭部232吸 同時使電鐘槽200的電鍍液循環。 子基板 然後方；進仃電鑛處理時，打開電鑛槽200的電 27〇’一邊旋轉基板頭2。4-邊使其下降，而將由頭:23: 所保持的基板W浸潰在電鍍槽2〇〇内的電鍍液。 3】5432 49 200423201 然後在將基板W浸潰於電鍍液中預定時間後，使基板 頭204上昇，從電鍍槽200内的電鍍液拉起基板w，並視 需要如上所述，朝基板W從噴射噴嘴268噴射純水（停止 液）立即冷卻基板w，再使基板頭204上昇，拉起基板w 到電鍍槽200的上方位置，並停止基板頭2〇4之旋轉。 其次，在以基板頭204的頭部232吸附保持基板w的 '情況下，移動基板頭204到洗淨槽202的正上方位置。然 參後一邊旋轉基板頭204 —邊令其下降至洗淨槽2〇2内之預 定位置’從喷射喷嘴280噴射純水等洗淨液（清洗液）洗淨 (清洗）基板w，同時從頭洗淨噴嘴286噴射純水等洗淨 液，以該洗淨液洗淨基板頭204的頭部232之至少接觸到 電鍍液的部分。The electroless mining device 30 of this type is placed, and the substrate head 204 is caused to suck the head 232 of the substrate head 204 in the manner described above, and the electroplating solution of the electric clock slot 200 is circulated. The sub-substrate is then squared. When the electric ore processing is performed, the electricity of the electric ore tank 200 is turned on 27 ° while the substrate head 2 is rotated 2. 4- while it is lowered, and the substrate W held by the head: 23: is immersed in electroplating Plating solution in the bath 200. 3] 5432 49 200423201 Then, after immersing the substrate W in the plating solution for a predetermined time, the substrate head 204 is raised, the substrate w is lifted from the plating solution in the plating bath 200, and as described above, the substrate W is removed from the substrate W The spray nozzle 268 sprays pure water (stop liquid) to immediately cool the substrate w, then raises the substrate head 204, pulls the substrate w to the upper position of the plating tank 200, and stops the rotation of the substrate head 204. Next, when the substrate w is sucked and held by the head 232 of the substrate head 204, the substrate head 204 is moved to a position directly above the cleaning tank 202. Then, while rotating the substrate head 204, it is lowered to a predetermined position in the cleaning tank 200 '. The cleaning liquid (cleaning liquid) such as pure water is sprayed from the spray nozzle 280, and the substrate w is cleaned (cleaned). The cleaning nozzle 286 sprays a cleaning liquid such as pure water, and at least a portion of the head portion 232 of the substrate head 204 that contacts the plating solution is cleaned with the cleaning liquid.

於完成該基板w之洗淨後，停止旋轉基板頭2〇4，上 昇基板頭204並拉起基板W至洗淨槽2〇2的上方位置，再 將基板頭204移動到與搬運機器人16的收付位置，而將基 板W交付給該搬運機器人1 6搬運到下一製程。 在該無電解電鍍裝置30,如第24圖所示，於計測無 電解電鍍裝置30所保有的電鍍液液量之同時，並具備有， 例如以吸收比色（abScn.pti_tricm、滴冑法、冑^學性測 試等分析電鍍液的組成’並補給電鍍液的不足成份之電鍍 液管理裝置330。然後，將該等的分析結果進行信號處理， 將電鍵液中的不足成份從未圖示的補給槽利用定量幫浦補 給到電鍍液儲槽302,以管理電鍍液的液量與組藉i 可重現性佳地實現薄膜電鍍。 曰 315432 50 200423201 ^•鍍液g理I置330係具有將該無電解電鐘裝置 所保有的電鍍液之溶解氧’例如以電化學性方法等加以測 試的溶解氧濃度計332,根據該溶解氧濃度計出的指示， :如賴氣、吹人氮氣等其他方法可將電㈣中的溶解氧 :度管理為一定。如此透過一定的管理電鍍液中的溶解氧 派度’可重現性佳地實現電鍍反應。 再者，當反覆利用電鍍液時，會蓄積從外部帶進的或 由其本身分解的某特定成份，將造成電鍍重現性與膜性的 劣化。透過追加選擇性去除該種特定成份之裝置，可達成 延長液體壽命與提高重現性。 第25圖係顯示研磨裝置（CMp裝置）32之一例。該研 磨裝置32係具有：上面黏貼有研磨布（研磨墊）82〇而構成 研磨面的研磨台822 ;以及將基板w其被研磨面朝研磨台 822加以保持的頂環824。然後，令研磨台822與頂環824 分別自轉，並一邊從設置在研磨台822上方的研磨液噴嘴 826供給研磨液，一邊由頂環824以一定的壓力將基板w 按壓在研磨台822的研磨布820，藉此來研磨基板w的表 面又亦可使用事先已採取放入研磨粒的固定研磨粒方 式，來當作研磨墊。 當使用上述的CMP裝置繼續研磨作業時，則研磨布 820研磨面研磨力將會下降，因此為了恢復該研磨力，設 置了打磨機（dreSser)828，利用該打磨機828於進行更換研 磨的基板W時等來從事研磨布820的打磨（dressing)。在 4打磨處理中’將打磨機8 2 8的打磨面（打磨構件）一邊按 51 315432 200423201 壓在研磨台822的研磨布820，一邊令該等自轉，藉此在 去除附著在研磨面的研磨液與切削屑之同睥，- j τ 退打研磨面 的平坦化及打磨，以再生研磨面。又亦可裝設監視基板在 研磨台822的表面狀態之監視器，於當場.μ叫檢測研 磨的終點（end point)，或亦可裝設監視器檢查當場Au) 的基板之完成狀態。 第26圖及第27圖係顯示具反轉機的膜厚測試器μ。 參如第26及第27圖所示，該膜厚測試器以係且有^轉機 339,該反轉機339係具有.反轉臂353、353。該反轉臂3兄、 353係將基板W的外周從其左右兩側來包夾保持具有將 基板W旋轉180度的反轉功能。而在該反轉臂Μ〕、”](反 轉平台）的正下方設置圓形的裝設台355，在裳設台355上 設置複數個膜厚感測器s。裝設台355係藉由驅動D裝置357 構成上下移動自如。 而於反轉基板W時，裝設台355係在基板w下方的 實線位置待命，反轉之前或之後上昇到虛線所示之位置， 以令膜厚感測器S接近把持在反轉臂3 53、3 53的基板w， 來測試其膜厚。 1 依照本例，因無搬運機器人的手臂等之限制，故可將 膜厚感測器S設置在裝設台355上的任意位置。又由於裝 設台355為上下移動自如的構成，故也可調整測試時基板 W與感測器間的距離。再者也可因應檢測目的裝設複數種 類的感測器，於每一個感測器的測試變更基板貨與感測器 故需要一些測試 間的距離。但因裝設台355為上下移動 315432 52 200423201 時間。 、、在例如可使用渦流感測器作為膜厚感測器s。渦 流感測器為產生渦流’並透過檢測導通基板w而回來的電 流頻率與損失來賴膜厚者，其使用在非接觸狀態下。又 光學感測器也很適於作為膜厚感測器s。光學感測器為將 光照射在試料m射光的f訊可直接地職膜厚者， 不僅是金屬膜也可測試氧化膜等絕緣膜的膜厚。膜厚感測 器s的設置位置並不限定於圖示者，可在欲測試的地方裝 設任意的個數。 其人，再簽照第28圖說明利用上述構成的基板處理 裝置進行第1A圖所示之在形成有晶種層6的基板w上形 成銅配線的一連串處理。 首先，將表面形成有晶種層6的基板w從搬運箱ι〇 一片一片的取出，再搬進裝卸台14。然後，將搬進該裝卸 台14的基板w用搬運機器人16搬運到膜厚感測器24， 以該膜厚感測器24測試初始膜厚（晶種層6的膜厚）。之後 視需要將基板w反轉並搬運到電鍍裝置18，在該電鍍裝 置18 ’如第1B圖所示，在基板冒表面堆積銅層7，以進 行銅的填埋。 然後’將形成有該銅層7的基板利用搬運機器人1 6 搬運到洗淨乾燥裝置20，進行利用純水的對基板w之·洗 淨並進行旋轉乾燥，或者在電鍍裝置〗8具有旋轉乾燥功能 時，在該電鍍裝置1 8進行基板w之旋轉乾燥（去除液體）， 再將該乾燥後的基板搬運到斜面蝕刻背面洗淨裝置22。 53 315432 200423201After cleaning the substrate w, stop rotating the substrate head 204, raise the substrate head 204 and pull up the substrate W to the upper position of the cleaning tank 202, and then move the substrate head 204 to the position of the transfer robot 16 At the payment location, the substrate W is delivered to the transfer robot 16 and transferred to the next process. As shown in FIG. 24, the electroless plating device 30 measures the amount of the plating solution liquid held in the electroless plating device 30, and includes, for example, an absorption colorimetric method (abScn.pti_tricm, dripping method, The electroplating solution management device 330, which analyzes the composition of the plating solution, such as chemical tests, and supplies the insufficient components of the plating solution, and then performs signal processing on the results of these analyses to remove the insufficient components in the keying solution from the unillustrated components. The replenishment tank is replenished to the plating solution storage tank 302 with a quantitative pump to manage the amount of the plating solution and to achieve thin film electroplating with good reproducibility. 315432 50 200423201 ^ • The plating solution is equipped with the 330 series. The dissolved oxygen concentration of the electroplating solution held in the electroless clock device is, for example, a dissolved oxygen concentration meter 332 which is tested by an electrochemical method and the like, and according to the instructions of the dissolved oxygen concentration meter, such as respiration and blowing nitrogen Other methods can be used to control the dissolved oxygen: degree in the electrolyte. In this way, through a certain management of the dissolved oxygen in the plating solution, the plating reaction can be achieved with good reproducibility. Furthermore, when the plating solution is used repeatedly ,meeting A specific component that is brought in from the outside or decomposed by itself will cause the degradation of plating reproducibility and film properties. By adding a device that selectively removes this specific component, it is possible to extend the life of the liquid and improve the reproducibility. FIG. 25 shows an example of a polishing device (CMp device) 32. The polishing device 32 includes a polishing table 822 on which a polishing cloth (polishing pad) 820 is adhered to form a polishing surface, and a substrate w is polished. The top ring 824 that is held facing the polishing table 822. Then, the polishing table 822 and the top ring 824 are rotated independently, and while the polishing liquid is supplied from the polishing liquid nozzle 826 provided above the polishing table 822, the top ring 824 is fixed at a certain level. The substrate w is pressed against the polishing cloth 820 on the polishing table 822 by the pressure of the substrate, so that the surface of the substrate w can be polished, or a fixed abrasive grain method in which abrasive grains have been placed in advance can be used as a polishing pad. When the CMP device continues the polishing operation, the polishing force of the polishing surface of the polishing cloth 820 will decrease. Therefore, in order to restore the polishing force, a dreSser 828 is installed. The replacement of the polished substrate W waits for the dressing of the polishing cloth 820. In the 4 polishing process, 'the polishing surface (the polishing member) of the polishing machine 8 2 8 is pressed on the polishing table 822 while pressing 51 315432 200423201 Cloth 820, while making these rotations, in order to remove the adhesion between the grinding fluid and the cutting chips adhering to the grinding surface,-j τ flatten and polish the grinding surface to regenerate the grinding surface. It can also be installed The monitor that monitors the surface state of the substrate on the polishing table 822 is called on the spot to detect the end point of the polishing, or a monitor can be installed to check the completion status of the substrate on the spot. 26 and 27 show a film thickness tester μ having a reversing machine. As shown in Figures 26 and 27, the film thickness tester is equipped with a turning machine 339, and the turning machine 339 has a turning arm 353, 353. The reversing arms 3 and 353 sandwich and hold the outer periphery of the substrate W from its left and right sides and have a reversing function of rotating the substrate W by 180 degrees. A circular mounting table 355 is provided directly under the reversing arm M], ”] (reversing platform), and a plurality of film thickness sensors s are provided on the mounting table 355. The mounting table 355 is borrowed The driving D device 357 is configured to move up and down freely. When the substrate W is reversed, the mounting table 355 is placed at the solid line position below the substrate w and rises to the position shown by the dotted line before or after reversing to make the film thickness. The sensor S is close to the substrate w held by the reversing arms 3 53 and 3 53 to test its film thickness. 1 According to this example, the film thickness sensor S can be set because there is no restriction on the arm of a transfer robot or the like. Arbitrary position on the mounting table 355. Since the mounting table 355 can move up and down, the distance between the substrate W and the sensor can be adjusted during the test. Furthermore, multiple types can be installed according to the purpose of the test. For each sensor, the distance between the substrate and the sensor is changed during the test of each sensor, so some test distance is required. However, because the installation table 355 is moved up and down 315432 52 200423201 time. For example, vortex flu can be used. The sensor is used as a film thickness sensor. The eddy current sensor is used to generate eddy currents. And by detecting the frequency and loss of the current returned from the conducting substrate w, it depends on the film thickness, which is used in a non-contact state. The optical sensor is also very suitable as a film thickness sensor s. The optical sensor is The light signal irradiated by the sample m can directly detect the thickness of the film, not only the metal film, but also the thickness of the insulating film such as an oxide film. The position of the film thickness sensor s is not limited to the one shown in the figure. An arbitrary number can be installed at the place to be tested. The person who signs it will then use FIG. 28 to explain the use of the substrate processing apparatus having the above structure to perform the formation of copper on the substrate w on which the seed layer 6 is formed as shown in FIG. 1A. A series of processes for wiring. First, the substrate w having the seed layer 6 formed on the surface is taken out one by one from the carrying case, and then carried into the loading and unloading station 14. Then, the substrate w carried into the loading and unloading station 14 is transferred. The robot 16 is transferred to the film thickness sensor 24, and the initial film thickness (film thickness of the seed layer 6) is tested by the film thickness sensor 24. After that, the substrate w is reversed and transferred to the plating device 18 as needed. Plating apparatus 18 'as shown in FIG. 1B, copper is deposited on the surface of the substrate The substrate 7 is filled with copper. Then, the substrate on which the copper layer 7 is formed is transferred to a washing and drying device 20 by a transfer robot 16 to clean and rotate the substrate w using pure water and spin-dry. Or, when the electroplating device 8 has a spin drying function, the electroplating device 18 performs spin drying (removal of liquid) on the substrate w, and then transports the dried substrate to the oblique etching back cleaning device 22. 53 315432 200423201

在該斜面I虫刻背面洗淨I W之傾斜（邊緣）部的不必 _去除附著在基板 6, ,b ^ ^ ^ , 叫¥ ’以純水等洗淨基板 的为面，之後，和前述—樣， 取 ^ ^ ^ 連機益人1 6搬運到洗淨 乾燥衣置20，利用純水對基板w r I > 進仃洗淨並予以旋轉乾 燦，或者在斜面蝕刻背面洗淨 . 衣置22具有旋轉乾燥功能 日可，以該斜面蝕刻背面洗淨步 r 、，μ 衣置22進行基板W之旋轉乾 _，亚將該乾燥後的基板以搬 置26。 連機态人1 6搬運到熱處理裝 在該熱處理裝置26進行基板1之熱 秋 後利用搬運機器人16將該埶處 … …、理後的基板W搬運到膜厚 ;:在此進行銅膜厚的測試，從此測試結果與前述 ，始膜厚的測試結果之差，求出鋼層7(參照第則）的膜 ^門透過此職後的膜厚，例如調整其次之對基板的電鑛 二’而於Μ厚仍然不；^時’再度進行利用電鐘的銅追加 之成膜。然後，利用搬運機哭人 鳥W搬運到研磨裝置32。°。將该膜厚測試後的基板 。如第1C ®所不’利用該研磨裝置32研磨去除堆積在 基板w表面的不用之銅層7及晶種層6，以平坦化基板W =表面。此時’例如於用監視器檢查膜厚與基板的完成狀 恶，並於該監視器檢測到終點（endp〇int)時，結束研磨。 然後’利用搬運機器人16將該研磨後的基板㈣運到洗 淨乾燥裝置20’在該洗淨乾燥裝4 2“乂藥液洗淨基板表 面’再於以純水洗淨（清洗）後，^速旋轉進行㈣乾燥。 然後’利用搬運機器人16將該旋轉乾燥後的基板％搬運 315432 54 200423201 到前處理裝置28。 利用該前處理裳置28，例如進It is not necessary to clean the inclined (edge) part of the IW on the back of the beveled engraved IW. It is not necessary to remove the adhered to the substrate 6, b ^ ^ ^, which is called "washing the substrate with pure water or the like as the surface, and after that,- Take ^ ^ ^ Lianji Yiren 1 6 and carry it to the washing and drying clothes 20, use pure water to clean the substrate wr I > and wash and spin dry, or wash the back of the bevel etched. 22 may have a spin-drying function, and the oblique etching back surface washing step r, may be performed, and the μ-clothing 22 performs spin-drying of the substrate W, and the dried substrate may be placed 26. The connected person 16 is transferred to the heat treatment device, and is installed in the heat treatment device 26 to carry out the heat treatment of the substrate 1 and then the transfer robot 16 is used to transfer the substrate to the film thickness. The copper film thickness is processed here. From the difference between the test results and the previous film thickness test results, find the film thickness of the steel layer 7 (refer to the rule) through the post-service film thickness, for example, adjust the second one on the substrate. 'While the thickness of M is still not; ^', the film formation using copper of the electric clock is performed again. Then, the crying bird W is transferred to the polishing device 32 by a transfer machine. °. The substrate after the film thickness test. As described in 1C®, the polishing device 32 is used to polish and remove the unnecessary copper layer 7 and the seed layer 6 deposited on the surface of the substrate w to planarize the substrate W = surface. At this time, for example, the thickness of the film and the completion of the substrate are checked with a monitor, and the polishing is terminated when the monitor detects an end point. Then, 'the polished substrate is transported to the washing and drying device 20 by the transport robot 16', and the substrate 4 is washed and dried in the "washing and drying equipment 4 2", and then washed (cleaned) with pure water. ^ Speed rotation for ㈣ drying. Then, 'the rotation-dried substrate is conveyed 315432 54 200423201 to the pre-processing device 28 by the transfer robot 16. Using the pre-processing clothes 28, for example,

表面的Pd觸媒，或去除附著在基板承附者在基板W 至少—方的電鍍前處理 土路表面的氧化膜等Pd catalyst on the surface, or remove the oxide film on the surface of the soil road, etc., which is attached to the substrate holder before the plating on the substrate W

包教引處理。然後，將該 T 如前述利用搬運機哭人又別處理後的基板， 純水進行對運到洗淨乾燥裝置利用 壯遲仃對基板W之洗淨並予以旋轉 才J用 衣置28具有旋轉乾燥 ，、或者在珂處理 和乾/木功此時，以該前處 板W之旋轉乾燥（去除液體），並以搬、置8進行基 燥後的純搬運到無電解電艘裝置30。 6將該乾 如第1D圖所不’利用該無電 配绫8本；y , r 敬衣置3 0在露出的 8 ^ 、列施以無電解C〇WP電鍍，並於 8外部的表面 上々、路出配線 n 、擇性地形成由C〇WP合金膜所構成的伴 遍 ）以保護配線8。該保護膜9的膜厚為〇 1至 5〇〇nm，最好為1 $ •主 取子為1至200⑽，更好在10至i〇〇nm左右。此 視保護膜9的膜厚’於該膜厚達到預定值時， 亦即檢測到終點（endpGint)時，結束無電解電錢。 、;、後利用搬運機器'人1 6將結束無電解電錢的基板 ^運到洗淨乾燥裝置2〇，在該洗淨乾燥裝置2〇以藥液洗 淨基板表面，再用純水洗淨（清洗）後，以高速旋轉進行旋 轉乾燥。然後，利用搬運機器人1 6將該旋囀乾燥後的基板 W經由裝卸台1 4搬運回搬運箱1 〇内。 第29圖係顯示本發明其他實施形態之電鍍裝置。該 第29圖所示之實施形態的電鍍裝置之與第3圖所示的電鍍 ^置之不同處，係使用在基板台504表面設置平坦化的基 55 參 # 315432 200423201 板載置面504e來作為基板台504者，以使基板w直接抵 接在該基板載置面504e之表面來加以載置保持之點。而其 他的構成則與第3圖所示者一樣。 '、 第30圖係顯示本發明另一其他實施形態之電鍍裴 置。該實施形態的電鍍裝置之與第3圖所示的電鍍裝置之 不同處，係使用在基板台504表面形成有凹部2〇4f，並在 該凹部204f内黏貼有襯墊臈564來作為基板台5〇4者，以 使基板W抵接在該襯墊膜564之表面來加以載置保持之 點。而其他的構成則與第3圖所示者一樣。Package teaches lead processing. Then, as described above, the substrate is processed by a conveyor, and the treated substrate is not processed. Pure water is transported to a washing and drying device. The substrate W is cleaned and rotated by the time delay. The clothes 28 have rotation. After drying, or at the time of K treatment and dry / wood work, the front plate W is spin-dried (removed of liquid), and then transported to the electroless electric boat device 30 by carrying and drying. 6 As shown in Figure 1D, use this non-electric power supply to make 8 books; y, r, and 30 are applied with electroless COWP plating on the exposed 8 ^, and on the outer surface of 8 , Outgoing wiring n, and optionally forming a companion made of COWP alloy film) to protect wiring 8. The film thickness of the protective film 9 is 0.01 to 500 nm, preferably 1 $. The main factor is 1 to 200 ⑽, more preferably about 10 to 100 nm. When the film thickness of the protective film 9 reaches a predetermined value, that is, when an end point is detected, the electroless electricity is terminated. After that, the substrate ^, which has been electrolyzed without electricity, is transported to a washing and drying device 20 by a transporting machine 'person 16'. In this washing and drying device 20, the surface of the substrate is washed with a chemical solution, and then washed with pure water. After cleaning (washing), spin-dry at high speed. Then, the substrate W after the spin-drying is transferred by the transfer robot 16 to the transfer case 10 via the loading / unloading stage 14. Fig. 29 shows a plating apparatus according to another embodiment of the present invention. The plating device according to the embodiment shown in FIG. 29 is different from the plating device shown in FIG. 3 in that a flat substrate 55 is provided on the surface of the substrate table 504. # 315432 200423201 Board mounting surface 504e The substrate stage 504 is a point where the substrate w is directly brought into contact with the surface of the substrate mounting surface 504e to be placed and held. The other components are the same as those shown in Figure 3. ', FIG. 30 is a view showing an electroplating device according to another embodiment of the present invention. The difference between the electroplating apparatus of this embodiment and the electroplating apparatus shown in FIG. 3 is that a recess 204f is formed on the surface of the substrate table 504, and a pad 臈 564 is stuck in the recess 204f as the substrate table. In the case of 504, the substrate W is brought into contact with the surface of the pad film 564 to be placed and held. The other structures are the same as those shown in FIG. 3.

第3 1圖係顯不本發明另一其他實施形態之電鍍裝 置。該帛31 ®所示之實施形態的電錢褒置之與帛3〇圖所 示的電鑛裝置之不同處，係使用電極頭5〇2的直徑比基板 台504的直徑小者來作為電極頭5〇2之點。於本例中，電 極頭5〇2的直徑因為比基板台5〇4的直徑小，故當以固定 電極頭5〇2與基板台504的狀態進行電鑛時，無法在以基 板台504所保持的整個基板貿進行電鍍。因此在本例中， 於將陰極電極512及陽極526連接在電鑛電源則進行電 鍍之際’係透過搖動臂500搖動電極頭5〇2，同時令電極 頭502或基板台504的至少一方旋轉來進行電鑛。而其他 的構成則與第30圖所示者一樣。 第32圖係顯示本發明另一其他實施形態之電鍍裝 置。該實施形態的電鍍裝置之與第29圖所示的電鍍裝置之 不同處，係在搖動臂500的自由端裝設有，旋轉自如且與 搖動I 5GG獨立上下移動之具有達成按壓分離裝置功能的 315432 56 200423201 驅動體580。而將該驅動體580以及上下移動殼體522(為 將陽極收納在内部’並以多孔質體⑶堵塞下端開口而區 ^ ^/成陽極至53G者）’透過配置在該上下移動殼體内 的支撐體582,以滾珠轴承⑽加以連結，伴隨驅動體58〇 的上下移動’透過該滾珠軸承584，冑負載集中在一點以 按壓上下移動殼體522之點。 在本例中，分則於驅動體58〇設置凸緣58〇a，於支撐 體582設置具有擋止器功能的㈣582卜而在驅動體58〇 的凸緣58〇a裝設有以壓縮螺簧別賦予彈力的狀態向下方 大出的拮止銷588 ’透過將該擋止銷588的下端彈性抵接 在支撐體582的凸緣（擋止器）582&，使支撐體582及上下 移動殼體522維持於水平。而其他的構成則與第29圖所示 者一樣。 再者在上述之例’係例示使用銅作為配線材料，但在 該銅之外亦可使用銅合金、銀及銀合金等，此點在以下之 例也是一樣。 依照本發明，透過在溝渠及穿孔的内部優先進行電鑛 以填埋配線材料(金屬膜），可提昇電鍍後表面的平坦性。 藉此’肖m或省略CMP般的對凸部選擇性蝕刻製程的負 載，不僅能削減成本，而且也可解決凹陷（dishing)與氧化 腐蝕等CMP特有的問題。 第33圖及第34圖係顯示本發明另一其他實施形態的 %鍍I置之重要部分的概要。該電鍍裝置係具有將多孔質 接觸體702、電錢液含浸材7()3及陽極綱收容在殼體川7 315432 57 200423201 内的陽極室706之電極頭7〇ι，該電極頭7〇1係透過支撐 構件711及氣囊7〇9裝設在主軸71〇。在殼體的下端 裝設有密封環708及陰極電極7 12。在本圖中，係記載有 於表面設有晶種層6的基板W。 電極頭701的構成係以陽極7〇4、電鍍液含浸材7〇3 及多孔質接觸體702的順序設置在殼體7〇7内。 設在該電極頭701的最下部之多孔質接觸體7〇2，係 具有大致與前述各例之多孔質墊534的下層墊534a 一樣的 構成，在此省略其說明。Fig. 31 shows a plating apparatus according to another embodiment of the present invention. The difference between the arrangement of the electric money of the embodiment shown in Fig. 31 and the electric mining device shown in Fig. 30 is that the electrode tip 502 having a diameter smaller than that of the substrate table 504 is used as an electrode. The first 502 points. In this example, the diameter of the electrode tip 502 is smaller than the diameter of the substrate stage 504. Therefore, when the power is mined in a state where the electrode tip 502 and the substrate stage 504 are fixed, the substrate stage 504 cannot be used. The entire substrate is kept plated. Therefore, in this example, when the cathode electrode 512 and the anode electrode 526 are connected to a power source and the plating is performed, the electrode head 502 is shaken through the swing arm 500, and at least one of the electrode head 502 and the substrate table 504 is rotated. Come for power mining. The other components are the same as those shown in FIG. 30. Fig. 32 shows a plating apparatus according to another embodiment of the present invention. The difference between the electroplating device of this embodiment and the electroplating device shown in FIG. 29 is that it is installed on the free end of the swing arm 500, and can rotate freely and move up and down independently of the swing I 5GG. 315432 56 200423201 Drive body 580. The driving body 580 and the up-and-down moving case 522 (for accommodating the anode inside and blocking the lower opening with a porous body ⑶ and forming the anode to 53G) are disposed through the up-and-down moving case. The supporting body 582 is connected by a ball bearing ⑽, and through the ball bearing 584 accompanying the up and down movement of the driving body 58, the load is concentrated at a point to press the point of the up and down movement housing 522. In this example, a flange 58〇a is provided on the driving body 58o, a ㈣582 having a stopper function is provided on the supporting body 582, and a compression screw is provided on the flange 58〇a of the driving body 58. The stopper pin 588 that is large downwards in a state where an elastic force is imparted by the spring is caused by elastically abutting the lower end of the stopper pin 588 against the flange (stopper) 582 of the support body 582 to move the support body 582 and up and down. The case 522 is maintained at a level. The other structures are the same as those shown in FIG. In the above-mentioned example, copper is used as the wiring material. However, copper alloys, silver, silver alloys, and the like may be used in addition to the copper. The same applies to the following examples. According to the present invention, by performing electric mining on the inside of trenches and perforations to fill the wiring material (metal film), the flatness of the surface after plating can be improved. By doing so, or by omitting the CMP-like selective etching process for the convex portion, not only can the cost be reduced, but also problems specific to CMP such as dishing and oxidative etching can be solved. Figures 33 and 34 show the outline of the important parts of the% plating method according to another embodiment of the present invention. This electroplating device is provided with an electrode tip 70 of an anode chamber 706 in which a porous contact body 702, an electrolytic solution impregnating material 7 () 3, and an anode gang are housed in a case 7 315432 57 200423201. The electrode tip 70. The 1-series transmission support member 711 and the airbag 709 are mounted on the main shaft 71. A seal ring 708 and a cathode electrode 712 are attached to the lower end of the case. In this figure, a substrate W having a seed layer 6 provided on its surface is described. The structure of the electrode tip 701 is arranged in the case 704 in the order of the anode 704, the plating solution impregnating material 703, and the porous contact body 702. The porous contact body 702 provided at the lowermost part of the electrode tip 701 has a structure substantially the same as that of the lower pad 534a of the porous pad 534 of each of the examples described above, and the description thereof is omitted here.

又夕孔貝接觸體7〇2的厚度，例如亦可為從中心朝外 :慢慢變厚的形態’多孔質接觸體702的微細貫通孔的孔 二、’例如亦可作成從中心朝外侧慢慢變小的形態。該等例 者透過將％體原料的粒徑作成從中心、朝外侧慢慢變小即可 =又多孔質接觸體7G2的微細貫通孔的孔徑本身，亦 :i成從陽極704側朝基板W侧慢慢地孔徑變小。此乃例 :猎由將粉體原料的粒徑朝接觸基板的面慢慢變 孔者’亦可重疊相對較硬之多孔質體和相對較軟之多 =以作成多孔質接觸體如，並可將多孔質接觸體7〇2 作成中心向下凸的形狀。 另;方面，電鍍液含浸材7〇3係具有保持電， 的=多孔質接觸體7〇2之表面與基板w的晶種“之間 的構成Μ有與料各例之電鍍液含浸材703大致相同 #成，故在此省略其說明。 315432 58 200423201 μ再者陽極704可為能電錢的金屬，亦可為白金、鈦 專非溶解性金屬或在金屬 至屬上電鍍白金等的非溶解性電極， 這與前述一樣。 陽極704係最好到其上部都能浸潰在電鍍液Q，又在 其上部敢好能設置空間部。办 “ Θ工間^在儲存使用非溶解性 電極時所產生的氧氣等氣體 孔版之同柃，透過從外部藉由閥（未 圖不）導入空氣等，可提高電極頭7〇1的整體壓力，或可用 電鑛液本身的重量控岳丨| γχ夕 ^董里&制攸多孔質接觸體702的微細貫通孔 流出的電鑛液量。 電極頭701係藉由呈右茸插4口危m k丄 /、有某種权度弹性的支撐構件711 囊709主轴-71〇°又在電極頭7〇1與主轴710之間設有氣 ㈣㈣減該氣囊中的空氣’上下移動整個 电極頭m’可增減對基板w晶種層6的壓力。 設在殼體707底部圓周的密封環，係以具有彈性 與漏液性的材料，例如以橡 豕胗或塑膠形成者，以防止電鍍 之夕孔質接觸體7〇2側 所 属出電鍍液。又即使在將多孔 貝接觸體702與基板W之晶種> 日日禋層6作成非接觸的狀態，該 山封壞708亦可作成不會離 A 土攸W之日日種層ό，而形成 月b防止電鍍液漏出的構造。 M . 4c Λι 又在在、封壤708外側，設有接 土板w之晶種層6而供電的陰極電極712。 再者，於第33圖中，在多孔皙 人、* 隹夕孔貝接觸體702與電鍍液 各反材703之間設有間隙吏 在4間隙存在有電鍍液Q， 仁在该間隙亦可設置軟質 你夕“ 毎綿寺。又亦可不設間隙，而 夕孔貝接觸體702與電鍍液含浸松 5 /又材703直接接觸。於後 315432 59 200423201 兄下，因電鍍液含浸材703的 電場時，亦可飛#入 /狀而品要均勻化的 了形成適合電鍍液含浸材7〇 觸體702之#扯 心狀的多孔質接 在主軸71。 又電極頭701雖藉由支撐構件川安裝 ，亚在電極頭701與主軸71〇之間 709，但亦可作成 ^ ^ 、只囊 成將電極頭7G1直接安裝在主軸710,而由 致動器等來移動整個主軸710。 而由 ^ 34圖係顯示電鍛裝置之整體構成。在該電鍛裝置 〜、統合控制部721、施加電壓控制部722、電鍍電源 723、運動控制部724、加壓幫浦⑵、致動器以及基 台 730 〇 該電鍍裝置係採用所謂面朝上方式的電解電鍍裝 置，基板W係表面朝上載置在基板台730上。於進行電鍍 時，對於該表面朝上的基板w，降下電極頭7〇1，使多孔 質接觸體702之表面與基板w之晶種層6接觸。然後，陰 極電極712與基板W表面的晶種層6接觸而形成可通電。 0又在本例中，雖是採取將表面朝上（face up)保持基板的方 式’但亦可採取面朝下（facedown)保持基板或保持基板於 垂直方向的方式。 另一方面，電極頭701中的電鍍液Q，係充滿設在陽 極704内部的細孔中、電鍍液含浸材703及多孔質接觸體 702之内部，並供給至基板w晶種層6的上面（表面）。供 給電鍍液的時機，在多孔質接觸體702與晶種層6接觸之 前或接觸之後皆可，但考慮到排除空氣以從剛接觸之前供 給為佳。 60 315432 200423201 在此狀態下，當在陽極704與基板W上的晶種層6之 間施加電壓流通電流時’在晶種層6之表面會進行電鑛（例 如鋼電鍍）。如此一來，在陽極704與基板W的晶種層6 之間有電鐘液含浸材703及多孔質接觸體702，而且多孔 質接觸體702會接觸到基板W的凸部，所以在容易供給電 鑛液的基板W之微細凹部之内部會優先析出金屬，形成優 先填埋該溝渠等。 又作為電鑛液，於使用添加劑，尤其 在電流密度變高的凸部並抑制該部分的電鍍析出之成份的 添加劑時，添加劑在形成凸部的基板微細凹部以外之部分 產生作用，能更加提昇在微細凹部内部的優先電鍍析出。 而於進行某種程度的電鍍時，透過來自統合控制部 721/資訊，由施加電壓控制部？22改變電鍍電壓的施加 ^二之同呤，透過運動控制部724使運動致動器726與加 j幫浦725改變基板w與電極頭7〇1的按壓狀態，而與改 '义电鍍電壓的施加狀態建立關連性。 722 ::Γ電：液中的成分減少0夺，透過施加電壓控制部 移動1/"*加Μ電壓，並與其同時，透過運動控制部724 7。2的位反置〜上的0曰種層6與電極頭701之多孔質接觸體 置:於供給新電鑛液的同時叫^ 之處也能進行㈣，而能獲得均質的電鍍臈。 如上所述，透過統合控制部721、施 及運動控制部724，令恭舉也处 奄土尨制部722 體他按屢在曰種居//加狀悲的變化與多孔質接觸 在S曰種層6的狀態變化相互形成關 3】5432 61 200423201 行預定時間的電鑛之後，使電極頭7〇1上昇，並使多孔柄 接觸體702與基板w的電鍍面分離。 貝 此時，*多孔質接觸體702的空洞雖會殘留金屬析出 物，但透過將多孔質接觸體7〇2之表面浸潰在另行準備的 姓刻槽（未圖示）可很容易地去除。 、 依照本發明，因為可在溝渠等之微細凹部内優先進行 、電鍍，所以可減少電鍍液的消耗量，而且即使在由基板： 籲多孔質接觸體所圍成的容積而構成的電鐘槽也可大幅地減 少電鑛液的使用4。再者，藉由例如停止電鍍時的移動運 動或加壓運動，能促進對微細凹部内的補充電鍍液，故也 具有抑制發生空洞的效果。 如上所述本發明，尤其在基板上使用銅等金屬進行填 埋電鍍的金屬鑲嵌（damascene)製程也可有效地利用。 以下舉實施例更詳細說明本發明，但本發明並不受該 等實施例的任何限制。 實施例 對於如第35圖所示之具有寬度較狹溝渠（深度1 # m ; 覓度0·18 // m)4a及寬度較此為大的寬度較寬溝渠（寬度 100 // m)4b的基板w，依照習知方法進行阻障金屬（barrier metal)處理。接著，以濺鍍法形成厚8〇nrn的晶種層6，以 作為試驗用樣本。 將該試驗用樣本利用具有第34圖所示構成之電極頭 (陽極704具有孔之含磷銅）7〇1的電鍍裝置，使用第1表所 示組成的酸性銅電鍍液進行電鍍。電鍍條件係如第3 6圖所 62 315432 200423201 不’而通電形態係採晶種層6與多孔質接觸體7〇2於最初 非接觸的狀態’開始1V的fit電壓錢，1G秒鐘後停止 通電。之後，令晶種層6與多孔質接觸體7〇2接觸，進行 1秒鐘的調試運動（細微的上下運動），之後施加5秒鐘的電 鍍電壓。接著’停止施加電鍍電壓的同時將晶種層6與多 孔質接觸體7G2作成非接觸的狀態。再者，於該非接觸的 狀態下進行基板W的旋轉運動後，令晶種層6與多孔質接 觸體702接觸，並施加5秒鐘電壓。將上述的施加電鍍電 壓，以及子層6與多孔質接觸體7〇2的接觸、#接觸狀態 進行8为釦後，終止電鍍。又其間的陽極室7〇6内壓力& 與氣囊709内壓力I，調整為如第％圖所示。 6 透過上述電鍍，可獲取第37圖所示模式圖的銅層7。 第1表（酸性銅電鍍浴組成） 硫酸銅（以五水和物的形式） 225g/L 硫酸 55g/L 氯 60ppm 聚乙二醇（MW Ca. 10000) 500mg/L 雙（3-績基丙基）二硫化物（SPS) 20MG/L (Janus green) 1 mg/L 由第37圖可知，依照本發明在寬度較狹溝渠乜與寬 度較寬溝渠4b等的微細凹部内部會優先產生電鍍析出，並 且抑制在凸部電鍍析出的結果， 1在不加厚整體銅層7的膜 厚狀態下，可將銅完全填埋在寬 溝渠4b等的微細凹部内部。 度較狹溝渠4a與寬度較寬 315432 63 200423201 凹部可作成第38圖所示之結果，亦即在最初階段， 产1丟/表面高度為a,，對此凸部金屬表面從凹部的高 二看h的高度。而藉由本發明在凹部優先產生電鍍析 亚巾制在凸部電鐘析出的結果，在凹部的電錢速度以 表，相對於此在凸部的電鍍速度則為H。而該速度 、、、果凸部與凹部的高度於變成相同的（h!)時，在電 又速度上並無差距，而以相同速度進行電鍍。 • # 39圖係顯示本發明之另-其他實施形態的電鍍裝 置之概要。此第39圖所示之電鍍裝置的與前述第Μ圖所 不的電鍍裝置不同之處係如下述。 亦即，在電極頭502,於以基板台504所保持的基板 w表面（被電鍍面），係以任意的壓力按壓下層墊534a，而 在本例中係具有由氣囊548所構成的按壓機構。亦即在本 例中方、鉍轉殼體520的頂壁下面與上下移動殼體522的 頂壁上面之間，配設有環狀之氣囊（按壓機構）548,該氣囊 • 548係透過加壓流體導入f 549連接到力口壓流體供給源（未 圖示）。 藉此，將搖動臂500固定在預定位置（製程位置）之無 法上下移動的狀態，透過以壓力加壓氣囊548内部，於 由基板台504所保持的基板W之表面（被電鍍面）以任意的 壓力更均勻的按壓下層墊534a，並透過將上述壓力匕恢 復到大氣壓力可解除對下層墊534a的按壓。 陰極電極5 12與陽極526係分別電性連接在電鑛電源 5 60的陰極與陽極。 64 315432 200423201 其次，針對以該電鍍裝置進行電鏟時的操作加以說 明。百先，於將基板w吸附保持在基板台5〇4上面的狀態， 使基板台504上昇，令基板w周邊部屢接在陰極電極川 而形成可通電狀態，再使之上昇而使封裝材514屋接在基 板W之周邊部上面，以水密性方式封裝基板w周邊部。 另方面，電極碩502係從進行空轉以進行更換電鐘 液及脫氣泡等的位雄轉位置），於將電㈣卩保持在内 部的狀態下，令其位於預定位置（製程位置）。亦即透過一 旦上昇搖動臂500,再使其旋轉，而令電極頭5〇2位於基 板台504的正上方位置，之後，將其下降於到達預定位置 (製程位置）時加以停止。然後，加壓陽極室53〇内，而從 多孔質塾534下面吐出由電極頭如所保持的電鍍液q。 接著，將加壓空氣導入於氣囊548内，將下層墊53乜往下 方推壓。 於此狀態下，分別旋轉（自轉）電極頭5〇2及基板台 504。藉此，透過將多孔質體528(下層墊534勾的表面表面 之粗糙度與多孔質體528(下層墊534a)朝基板貿的被電鍍 面按壓時產生在該多孔質體528(下層墊534a)的波形或反 翹等，如第40圖所示，在多孔質體528(下層墊534a)與基 板W的被電鍍面p之間局部性地產生間隙s，即使在該間 隙S存在有電鍍液Q，亦可利用伴隨該旋轉所產生的離心 力將存在於該間隙s的電鍍液Q予以排出。如此，透過排 除電鍍液Q，可將整個孔質體528(下層墊534a)往基板w 的被電鍍面均勻地按壓使其密接。 315432 65 200423201 再者於本例中’在將下層墊534a往下方推壓後，雖例 示了令電極頭502及基板台504分別旋轉，但將加壓空氣 入於氣囊548内’並將下層墊534a往下方推壓之際，亦 可々黾極頭502及基板台504先行旋轉，而在按壓後也使 该旋轉持續預定的時間。 而於將存在於多孔質體528(下層墊534a)與基板W的 、被電鍍面P之間所產生局部性間隙S的電鍍液Q加以排 _除，並給予充分時間將整個孔賀體528(下層墊534a)往基 板W的被電鍍面均勻地按壓使其密接，而在旋轉電極頭 5 02及基板台504後，停止該旋轉。 接著’將陰極電極512與陽極526分別連接在電鍍電 源5 6 0的陰極與陽極，藉此在基板w的被電鐘面進行電 鍍。如此，透過以任意的壓力將下層墊534a按壓在由基板 台5 04所保持的基板W之被電鍍面，且在提高兩者密接性 的狀態下進行電鍍，可消除下層墊534a與基板w之被電 、參鍍面的溝渠等配線用微細凹部以外部分（圖案部以外的部 .分）之間的間隙，而能在設於基板的配線用微細凹部之内部 選擇性地析出電鍍膜。 然後，於繼續進行預定時間的電鍍後，解除陰極電極 512及陽極526之與電鍍電源56〇的連接，將陽極室53〇 内恢復到大氣壓力，再將氣囊5 4 8内恢復到大氣壓力，以 解除下層墊534a的對基板貿之按壓，然後使電極頭5〇2 上昇。 視需要反覆進行預定次數的上述操作，在基板w表面 315432 66 200423201 (被電鍍面）成膜足夠膜厚的銅層7(參照第18圖）來填埋配 線用之微細凹部後，旋轉電極頭5〇2而回到原來的位置（空 轉位置）。 第41圖係顯示本發明之另一其他實施形態的電鍍裝 置之要邛本例之與第3 9圖所示例的相異之處，係在基板 台504上面的基板载置部裝設有壓電振動器59〇,在由基 板。504所載置的基板w，透過該壓電振動器59〇，對基 板W的被電鍍面施以垂直的上下方向之振動。 本例係與前述’朝由基板台504所保持的基板W 推壓下層塾534a後’透過壓電振動器59〇令基板％朝上 下方向振動預定時間’或於推壓時，先透過壓電振動器59〇 7基板W朝上下方向振動，而於將下層墊乜推壓後也 繼續進行狀時間的該振動，藉此如第4q圖所示，在多孔 貝把528(下層墊534a)與基板w的被電鍍面p之間局部性 地產生間隙:S，即使在該間隙s存在有電鑛液q，也可將 子在於j間隙S的電鑛液Q伴隨該振動將其排除到外邊。 尤其如本例般’透過使基板w朝與被電鍍面垂直之方向振 動’使多孔f體與基板的被電鍍面相互不會形成滑接，可 防止電鑛表面受到傷宝。 _ 又作為振動器藉由使用壓電振動 态59〇，可達成機構的小型化。 第42圖如顯不本發明之另一其他實施形態的電鍍裝 f之要部。本例之與第39圖所示例的相異之處，係在基板 广上面形成有例如保持純水等液體的儲請名，同時 儲槽，内部設置有超音波振盪器592,其係將超音 315432 67 200423201 波傳送給该儲槽5〇4g内的液體而以高頻振動該液體。 本例係將純水等液體先充滿在基板台504的儲槽504g 内，再和前述一樣，將基板w吸附保持在基板台5〇4的上 面。此時，使由基板台504所保持的基板冒與基板台5〇4 儲枱504g内的液體接觸。然後，朝由基板台5〇4所保持的 基板w，推壓下層墊53乜後，透過超音波振盪器592對 基板台504之儲槽504g内的液體施以超音波振動。如此一 來，液體的超音波振動會傳導到基板w而使基板振動，再 $電鍍液Q傳導到多孔質體528而使多孔質體528振動。 藉此14岫述一樣，可將存在於多孔質體528(下層墊 與基板W之被電鍍面P之間局部性所產生間隙s中的電鍍 液Q，伴隨該振動而排除到外邊。 再者與前述一樣，於推壓下層墊534a之際，亦可預先 透過超音波振盪器592 ’將超音波振動施加在基板台5〇4 之儲槽5 0 4 g内的液體。 第43圖係顯示本發明之另一其他實施形態的電鑛裝 置之要部。本例之與第39圖所示例的相異之處，係在區隔 形成陽極室530的上下移動殼體⑵之頂壁裝設壓力痒 594’在該壓力埠594,透過開關閥別連接作職力控制 部的真空幫浦598。 依照本例，透過驅動直空暂 切”工帛浦598真空排氣陽極室53〇 内’使陽極室5 3 0内的壓力成盔 γ J成為比大氣壓力低的壓力（負 壓）’如弟44圖所示’吸引存在於夕 于牡於多孔質體528(下層墊534a) 與基板W之被電鍍面p之間的 J的間隙S内之電鍍液q，促進 315432 68 200423201 電鍍液Q通過多# μ μ。， ^ ^ 貝月豆8(下層塾534a)内部流入陽極室 530内，可從間隙S排除電鏟液Q。 再者，該電鐘液的吸引排除作業係與前述各例一樣， 朝由基板台504戶;f # # Μ # 4 汀保持的基板w推壓下層墊534a之後， 或於推壓之際預务冷广 y ^ 、進仃，但亦可在電鍍中繼續進行。 又在第43圖所示之例中 — 1例甲係例不透過開關閥596將 真空f浦=連接到厂堅力蜂別，但亦可連接加壓幫浦以 取代》亥”工4浦598 ’另在上下移動殼體設置排氣淳，利 用反覆以加壓幫浦加壓陽極室53〇内及以來自排氣淳的排 耽予以減壓之壓力振動，使陽極室530内的電鍍液q以及 多孔質體528振動。 如以上的詳細說明，依照本發明，以任意的廢力將多 孔質體按壓於由基板台所保持的基板被電鍍面時，透過排 除存在於多孔質體與被電鑛面之間的間隙内之電鍍液，可 在不需加大載重而使整個多孔質體均勻地密接在基板被電 錢面的狀態下進行電鍍。藉&，在溝渠或穿孔内部優先進 行電錄填埋配線材料（金屬膜），可提昇㈣後表面的平坦 ί生。因此’可削減或省略CMP般的凸部選擇性蝕刻製程的 負載，不僅能肖m成本，而且也可解決㈣（dishing)與氧 化腐蝕等CMP特有的問題。 第46圖至第49圖係顯示本發明之另一其他實施形態 的電鍍裝置。該電鍍裝置之與前述第29圖所示之電鍍裝置 的差異處係如以下所述。 亦即如第46圖所示’在該電錢裝置具有進行電鍍處 315432 69 200423201 理及其附帶處理的電鍍處理部63 〇，鄰接該電鍍處理部63 〇 配置有空轉台632。並且設有具電極頭5〇2的電極臂部 636,該電極頭5〇2被保持在以旋轉軸634為中心而搖動的 搖動臂500前端，並在電鍍處理部63〇與空轉台632之間 移動。另在位於電鍍處理部63〇的側方配置預塗（prec〇at) 回收臂638，以及將純水或離子水等藥液及氣體等朝基板 ^噴射的固定喷嘴640。在本實施形態中，係設有3個固定 參噴嘴MO，其中1個用於供給純水用。 再如第46圖所示，配置在陽極室530内的多孔質體 528係積層3層多孔質材，形成在各層間設有空間的多層 構造。亦即，多孔質體528係由電鍍液含浸材532以及由 下層墊534a及上層墊534b所構成的多孔質墊534組成， 刀別在下層墊534a與上層墊534b之間設有第i空間 642a ·’在上層墊534b與電鍍液含浸材532之間設有第2 空間642b 。 •在下層墊534a與上層墊534b之間設置第i空間 .642a’在第1空間642a内部以及位於其下方的下層墊53乜 内部，主要是供給新鮮的電鍍液並予以預先保持，藉由透 過下層墊534a在剛要進行電鍍之前將該新鮮電鍍液供給 到基板W，可藉由較少量的電鍍液供給，進行經常使用新 t電錢液的電鑛。亦即在本例巾，如下所述，透過在陽極 至530内部（上部）導入加壓流體，以壓力P1G加壓陽極室 使陽極至5 3 0内的電鍍液供給到基板，此時，透過主 要在第1空間642a内部，以及位於其下方的下層墊53物 315432 70 200423201 内部預先保持新鮮電鍵液，可防止位於陽極室53g内浸潰 陽極526的電鍍液混入到供給至該基板的新鮮電鍵液。 再者，透過在上層墊534b與電鍍液含浸材之間 δ又置弟2空間642b，可將該第2空間.6杨主要作為保持 料電鐘液的空間使用，而且可令其發揮如同阻絕位於陽 極室530内浸潰陽極526的電鍍液混入該第2空間沘 内的電錢液亦即新鮮電鍍液中之效果。In addition, the thickness of the Kongbei contact body 702 may be, for example, from the center to the outside: a gradually thickened hole "porous contact hole 702 of the porous contact body 702", for example, it may be made from the center to the outside The shape gradually becomes smaller. In these examples, the particle diameter of the% body material can be gradually reduced from the center to the outside. The hole diameter of the fine through-holes of the porous contact body 7G2 is also: i. The aperture gradually becomes smaller on the side. This is an example: Those who gradually change the particle size of the powder raw material toward the surface of the contact substrate can also overlap the relatively hard porous body and the relatively soft one = to make a porous contact body such as, and The porous contact body 702 can be formed in a shape where the center is convex downward. On the other hand, the electroplating solution impregnating material 703 has a structure between the surface of the porous contact body 702 and the seed of the substrate w. The electroplating solution impregnation material 703 has various examples. Roughly the same # 成, so its description is omitted here. 315432 58 200423201 μ Furthermore, the anode 704 may be a metal capable of electricity, platinum, titanium, a non-soluble metal, or a non-plated metal such as platinum. The soluble electrode is the same as the above. The anode 704 is best to be immersed in the plating solution Q to the upper part, and the space part can be installed on the upper part. By introducing air, etc., from the outside through the valve (not shown) from the outside, the overall pressure of the electrode tip 701 can be increased, or the weight of the electric mineral liquid itself can be used to control the pressure. γ × 夕 ^ Dongli & Manufacturing Co., Ltd. porous contact body 702 amount of electric ore liquid flowing out through the fine through holes. The electrode head 701 is a support member 711 which has a certain degree of elasticity by inserting 4 mk 丄 /, and has a certain degree of elasticity. An air core is provided between the electrode head 701 and the main shaft 710. Reducing the air 'moving the entire electrode head m' in the airbag can increase or decrease the pressure on the substrate w seed layer 6. The seal ring provided on the bottom circumference of the case 707 is made of a material having elasticity and liquid leakage, such as rubber or plastic, to prevent the electroplating solution from being present on the pore side of the porous contact body at the time of electroplating. Even when the porous shell contact body 702 and the seed of the substrate W are in a non-contact state, the mountain seal 708 can also be a day seed layer that does not leave A soil Y. A structure that prevents the plating solution from leaking out is formed. M. 4c Λι is further provided with a cathode electrode 712 on the outer side of the enclosure 708, which is connected to the seed layer 6 of the earth plate w to supply electricity. Furthermore, in FIG. 33, a gap is provided between the porous person, * 隹 xi Kongbei contact body 702, and each of the plating solution counter-materials 703. There is a plating solution Q in 4 gaps. Set the soft you Xi "Mianmian Temple. There may be no gap, and the Xikongbei contact body 702 is in direct contact with the plating solution impregnated loose 5 / wood 703. Brother 315432 59 200423201 brother, due to the plating solution impregnated material 703 At the time of electric field, it is also possible to fly into the shape and form a uniform porous material suitable for electroplating solution impregnating material 70, the body 702 is connected to the main shaft 71. Although the electrode head 701 is supported by a supporting member In the Sichuan installation, Asia is 709 between the electrode head 701 and the main shaft 71. However, it can also be made ^ ^, only the electrode head 7G1 is directly installed on the main shaft 710, and the entire main shaft 710 is moved by an actuator or the like. ^ Figure 34 shows the overall configuration of the electric forging device. In this electric forging device ~, the integrated control section 721, the applied voltage control section 722, the plating power source 723, the motion control section 724, the pressurized pump, the actuator, and the base 730 〇 This electroplating device uses a so-called face-up method In the device, the substrate W is placed on the substrate table 730 with its surface facing upward. During the electroplating, the electrode tip 701 is lowered for the substrate w with the surface facing upward, and the surface of the porous contact body 702 and the seed of the substrate w are seeded. The layer 6 is in contact. Then, the cathode electrode 712 is in contact with the seed layer 6 on the surface of the substrate W to form an electric current. 0 In this example, the method of holding the substrate face up is used, but it may be used. The method is to hold the substrate facedown or to hold the substrate in a vertical direction. On the other hand, the plating solution Q in the electrode tip 701 is filled with pores provided inside the anode 704, the plating solution impregnating material 703, and porous The inside of the mass contact body 702 is supplied to the upper surface (surface) of the substrate w seed layer 6. The timing of supplying the plating solution may be before or after the porous contact body 702 contacts the seed layer 6. However, it is considered that It is better to supply air before contacting. 60 315432 200423201 In this state, when a voltage is applied to the current flowing between the anode 704 and the seed layer 6 on the substrate W, electricity is applied to the surface of the seed layer 6. Ore (such as steel In this way, between the anode 704 and the seed layer 6 of the substrate W, there is an electric clock liquid impregnating material 703 and a porous contact body 702, and the porous contact body 702 contacts the convex portion of the substrate W, so Metal is preferentially deposited inside the fine recesses of the substrate W, which is easy to supply the electric mineral liquid, and the trenches are preferentially buried, etc. As an electric mineral liquid, additives are used, especially in the convex portion where the current density becomes high, and the portion of the portion is suppressed. When plating the additive of the precipitated component, the additive acts on the portion other than the fine concave portion of the substrate forming the convex portion, which can further enhance the preferential plating precipitation inside the fine concave portion. And when a certain degree of plating is performed, is the voltage applied control unit through the integration control unit 721 / information? 22 The application of the plating voltage is changed. The motion control unit 724 causes the motion actuator 726 and the pump 725 to change the pressing state of the substrate w and the electrode head 701, and changes the plating voltage. Applying states establishes relevance. 722 :: Γ Electricity: The components in the liquid are reduced by 0, and the voltage control unit moves 1 / " * plus M voltage, and at the same time, it passes the motion control unit 724 7.2 bit inversion to 0 on the above The porous contact body of the seed layer 6 and the electrode head 701 is disposed at the place where the new electric ore liquid is supplied, and the ㈣ can also be carried out, and a homogeneous electroplated 臈 can be obtained. As mentioned above, through the integration control unit 721 and Shihe motion control unit 724, he respectfully also belongs to the soil control system 722. He follows the changes in the hometown and / or the state of contact with the porous body in the following days: The change in the state of the seed layer 6 is mutually related. 5432 61 200423201 After a predetermined period of time, the electrode head 701 is raised, and the porous handle contact body 702 is separated from the plating surface of the substrate w. At this time, although the voids of the porous contact body 702 remain metal deposits, they can be easily removed by immersing the surface of the porous contact body 702 in a separately prepared groove (not shown). . According to the present invention, since plating can be performed preferentially in fine recesses such as trenches, the consumption of the plating solution can be reduced, and even in an electric clock groove constituted by a substrate: a volume surrounded by a porous contact body It can also significantly reduce the use of electricity and mineral fluids4. Furthermore, by stopping the moving movement or pressurizing movement during plating, for example, it is possible to promote the replenishment of the plating solution in the fine recessed portions, and therefore it is also effective to suppress the occurrence of voids. As described above, in the present invention, a damascene process using a metal such as copper for land plating on a substrate can be effectively used. The following examples illustrate the present invention in more detail, but the present invention is not limited in any way by these examples. The embodiment is shown in FIG. 35 for a trench having a narrower width (depth 1 # m; depth 0 · 18 // m) 4a and a wider trench having a larger width (width 100 // m) 4b The substrate w is subjected to barrier metal processing according to a conventional method. Next, a seed layer 6 having a thickness of 80 nm was formed by a sputtering method as a test sample. This test sample was plated with an acid copper plating solution having the composition shown in Table 1 using a plating apparatus having a structure shown in Fig. 34 (anode 704 having phosphorus-containing copper with holes) and an acid copper plating solution having the composition shown in Table 1. The plating conditions are as shown in Figure 36, 62, 315, 432, 2004, 23, 201, and the energized morphology. The seed layer 6 and the porous contact body 702 are in a non-contact state at the beginning. The 1V fit voltage is started, and it stops after 1G seconds. power ups. After that, the seed layer 6 is brought into contact with the porous contact body 702, a debugging movement (a fine up-and-down movement) is performed for 1 second, and then a plating voltage of 5 seconds is applied. Next, 'the application of the plating voltage is stopped and the seed layer 6 and the porous contact body 7G2 are brought into a non-contact state. After the substrate W is rotated in the non-contact state, the seed layer 6 is brought into contact with the porous contact body 702, and a voltage is applied for 5 seconds. After applying the above-mentioned plating voltage, the contact of the sub-layer 6 with the porous contact body 702, and the #contact state, 8 is performed, and the plating is terminated. In the meantime, the internal pressure of the anode chamber 706 and the internal pressure I of the airbag 709 were adjusted as shown in FIG. 6 Through the above electroplating, the copper layer 7 of the pattern shown in Fig. 37 can be obtained. Table 1 (Composition of acid copper plating bath) Copper sulfate (in the form of pentahydrate) 225g / L sulfuric acid 55g / L chlorine 60ppm polyethylene glycol (MW Ca. 10000) 500mg / L double Base) disulfide (SPS) 20MG / L (Janus green) 1 mg / L As shown in FIG. 37, according to the present invention, electroplated precipitation is preferentially generated in fine recesses such as narrow trenches and wide trenches 4b according to the present invention. In addition, as a result of suppressing the precipitation of the plating on the convex portion, 1 without completely thickening the film thickness of the entire copper layer 7, copper can be completely buried in the fine recesses such as the wide trench 4b. The narrower trench 4a and wider width 315432 63 200423201 The concave part can be made as shown in Figure 38, that is, in the initial stage, the yield is 1 / the surface height is a. For this, the metal surface of the convex part is viewed from the second highest part of the concave part. h's height. However, according to the present invention, the plating precipitation is preferentially generated in the concave portion. As a result of the precipitation of the electric clock made in the convex portion by the electric towel, the speed of the electric money in the concave portion is shown, while the plating speed in the convex portion is H. When the speeds, heights, heights of the convex portions and the concave portions become the same (h!), There is no difference in electrical speed, and plating is performed at the same speed. • # 39 shows the outline of a plating apparatus according to another embodiment of the present invention. The electroplating apparatus shown in FIG. 39 is different from the electroplating apparatus not shown in the aforementioned FIG. M in the following points. That is, on the electrode tip 502, the lower surface pad 534a is pressed on the surface (plated surface) of the substrate w held by the substrate stage 504 with an arbitrary pressure, and in this example, there is a pressing mechanism composed of a balloon 548. . That is, in this example, a ring-shaped airbag (pressing mechanism) 548 is arranged between the lower surface of the top wall of the bismuth rotating housing 520 and the upper surface of the upper and lower moving housing 522, and the airbag • 548 is pressurized The fluid introduction f 549 is connected to a port pressure fluid supply source (not shown). Thereby, the rocking arm 500 is fixed in a predetermined position (process position) in a state where it cannot move up and down, and the surface of the substrate W held by the substrate stage 504 (the plated surface) is arbitrarily passed through the airbag 548 under pressure by pressure. The pressure of the lower layer pad 534a is more evenly pressed, and the pressure on the lower layer pad 534a can be released by restoring the pressure dagger to atmospheric pressure. The cathode electrode 512 and the anode 526 are electrically connected to the cathode and anode of the power supply 5 60 respectively. 64 315432 200423201 Next, the operation when a shovel is performed with the plating apparatus will be described. Baixian, in a state where the substrate w is adsorbed and held on the substrate stage 504, the substrate stage 504 is raised, and the periphery of the substrate w is repeatedly connected to the cathode electrode channel to form a current-enable state, and then raised to make the packaging material 514 is connected on the peripheral portion of the substrate W, and encapsulates the peripheral portion of the substrate w in a water-tight manner. On the other hand, the electrode master 502 is turned from idle position to replace the electric clock liquid and degassing, etc.), and keep the battery in a predetermined position (process position) while keeping the battery inside. That is, once the swing arm 500 is raised and rotated, the electrode tip 502 is positioned directly above the substrate table 504, and thereafter, it is lowered to a predetermined position (process position) and stopped. Then, the inside of the anode chamber 53 is pressed, and the plating solution q held by the electrode tip is discharged from below the porous 塾 534. Next, pressurized air is introduced into the airbag 548, and the lower pad 53 垫 is pushed downward. In this state, the electrode head 502 and the substrate stage 504 are rotated (rotated), respectively. As a result, when the porous body 528 (the lower surface pad 534 hook surface roughness) and the porous body 528 (the lower surface pad 534a) are pressed against the plated surface of the substrate, the porous body 528 (the lower surface pad 534a) is generated. ) Waveform or reverse warping, etc., as shown in FIG. 40, a gap s is locally generated between the porous body 528 (lower pad 534a) and the plated surface p of the substrate W, even if plating exists in the gap S The liquid Q can also be discharged from the plating solution Q existing in the gap s by using the centrifugal force generated by the rotation. In this way, by removing the plating solution Q, the entire pore body 528 (the lower pad 534a) can be directed to the substrate w. 315432 65 200423201 In this example, after pressing the lower pad 534a downward, the electrode head 502 and the substrate table 504 are respectively rotated, but pressurized air is exemplified. When it is inserted into the airbag 548 and the lower pad 534a is pushed downward, the pole head 502 and the substrate table 504 may be rotated in advance, and the rotation may be continued for a predetermined time after being pressed. The porous body 528 (lower pad 534a) and the substrate W The plating solution Q generated by the local gap S between the plating surfaces P is eliminated, and sufficient time is given to uniformly press the entire hole body 528 (the lower pad 534a) against the plated surface of the substrate W to make it tightly contact, and After rotating the electrode tip 502 and the substrate stage 504, the rotation is stopped. Next, 'the cathode electrode 512 and the anode electrode 526 are connected to the cathode and the anode of the plating power source 5 60 respectively, thereby performing plating on the to-be-clocked surface of the substrate w. In this way, the lower pad 534a and the substrate w can be eliminated by pressing the lower pad 534a against the plated surface of the substrate W held by the substrate stage 504 with an arbitrary pressure, and performing the plating with the adhesion improved. The gap between parts other than the wiring micro-recesses (parts other than the pattern part) such as the trenches to be plated and reference plated surfaces can selectively deposit a plating film inside the wiring micro-recesses provided on the substrate. Then, after the plating is continued for a predetermined time, the cathode electrode 512 and the anode 526 are disconnected from the plating power source 56, and the anode chamber 53 is restored to atmospheric pressure, and the airbag 5 48 is restored to atmospheric pressure. Release the substrate pad 534a from pressing the substrate, and then raise the electrode tip 502. Repeat the above-mentioned operations as many times as necessary to form a copper layer of sufficient thickness on the surface of the substrate 315432 66 200423201 (the surface to be plated). 7 (Refer to FIG. 18) After filling the fine recesses for wiring, the electrode tip is rotated 502 to return to the original position (idling position). FIG. 41 shows a plating apparatus according to another embodiment of the present invention. The main difference between this example and the example shown in FIG. 39 is that a piezoelectric vibrator 59 is mounted on the substrate mounting portion on the substrate stage 504, and the substrate is mounted on the substrate. The substrate w placed at 504 passes through the piezoelectric vibrator 59 and applies vertical vertical vibration to the plated surface of the substrate W. This example is related to the aforementioned 'after pressing the lower layer 塾 534a toward the substrate W held by the substrate stage 504' and 'transmitting the substrate% upwards and downwards for a predetermined time through the piezoelectric vibrator 59; or when pressing, the piezoelectric element is first transmitted through the piezoelectric The vibrator 5907 vibrates the substrate W in the up and down direction, and continues to vibrate for the same time after pressing the lower pad 乜. As shown in FIG. 4q, the porous shell 528 (the lower pad 534a) and A gap: S is locally generated between the plated surfaces p of the substrate w. Even if the electric ore liquid q exists in the gap s, the electric ore liquid Q located in the gap j can be excluded to the outside with this vibration. . In particular, as in this example, 'the substrate f is vibrated in a direction perpendicular to the surface to be plated', so that the porous f-body and the surface to be plated of the substrate do not form a sliding contact with each other, which can prevent damage to the surface of the power ore. _ As a vibrator, it is possible to reduce the size of the mechanism by using piezoelectric vibration state 59. Fig. 42 shows a main part of the electroplating assembly f according to another embodiment of the present invention. The difference between this example and the example shown in Figure 39 is that a storage name for holding liquid such as pure water is formed on the substrate. At the same time, the storage tank is provided with an ultrasonic oscillator 592. Sound 315432 67 200423201 The wave is transmitted to the liquid in 504g of the storage tank, and the liquid is vibrated at a high frequency. In this example, a liquid such as pure water is first filled in the storage tank 504g of the substrate stage 504, and then the substrate w is adsorbed and held on the substrate stage 504 as described above. At this time, the substrate held by the substrate stage 504 was brought into contact with the liquid in the substrate stage 504 g of the 504 storage stage. Then, the lower pad 53 保持 is pushed toward the substrate w held by the substrate stage 504, and then the liquid in the storage tank 504g of the substrate stage 504 is subjected to ultrasonic vibration through the ultrasonic oscillator 592. In this way, the ultrasonic vibration of the liquid is transmitted to the substrate w to vibrate the substrate, and the plating solution Q is transmitted to the porous body 528 to vibrate the porous body 528. With this description, the plating solution Q existing in the porous body 528 (the gap s locally generated between the underlying pad and the plated surface P of the substrate W can be excluded from the vibration.) As before, when the lower pad 534a is pushed, the ultrasonic vibration may be applied in advance to the liquid in the storage tank 504 g of the substrate table 504 through the ultrasonic oscillator 592 '. Fig. 43 shows The main part of the electric mining device according to another embodiment of the present invention. The difference between this example and the example shown in FIG. 39 is that it is installed on the top wall of the up-and-down moving casing 形成 that forms the anode chamber 530. Pressure itch 594 'At this pressure port 594, a vacuum pump 598 serving as a duty control unit is connected through an on-off valve. According to this example, the vacuum pump is temporarily cut off by "driving the vacuum pump 598 in the anode chamber 53 of the industrial pump 598". The pressure in the anode chamber 5 3 0 is set to a lower pressure (negative pressure) than the atmospheric pressure (negative pressure) 'as shown in Figure 44' to attract the porous body 528 (lower pad 534a) and the substrate existing The plating solution q in the gap S of J between the plated surfaces p of W promotes 315432 68 200423201 The plating solution Q passes through # μ μ., ^ ^ Beiyuedou 8 (lower layer 塾 534a) flows into the anode chamber 530, and the electric shovel liquid Q can be removed from the gap S. Furthermore, the electric clock liquid suction and removal operation system As in the previous examples, after pushing the lower pad 534a toward the substrate w held by the substrate stage 504; f # # Μ # 4 tent, or on the occasion of the pressing, it is expected to be cold and cold. Continue the plating. Also in the example shown in Figure 43—a case of the first case did not connect the vacuum pump to the factory firm beetle through the on-off valve 596, but it can also be connected to a pressurized pump to replace it. "Hai" Gong 4 Pu 598 'In addition, the exhaust gas is installed in the upper and lower moving shells, and the pressure vibration in the anode chamber 53 is repeatedly pressurized with the pressure pump and the pressure vibration is reduced by the exhaust pressure from the exhaust gas. The plating solution q and the porous body 528 in the anode chamber 530 are vibrated. As described in detail above, according to the present invention, when the porous body is pressed against the plated surface of the substrate held by the substrate stage with an arbitrary waste force, the existence of the porous body is eliminated by transmission. The electroplating solution in the gap between the porous body and the surface to be mined can be adjusted without increasing the load. The porous body is evenly adhered and electroplated in a state where the substrate is electrically charged. By using &, priority is given to recording landfill wiring material (metal film) inside the trench or perforation, which can improve the flatness of the rear surface. Therefore, the load of the CMP-like selective selective etching process can be reduced or omitted, which not only reduces the cost, but also solves the problems unique to CMP such as fishing and oxidative corrosion. Figures 46 to 49 A plating apparatus according to another embodiment of the present invention is shown. The differences between the plating apparatus and the plating apparatus shown in FIG. 29 are as follows. That is, as shown in FIG. 46 ', the electric money device has a plating section 315432 69 200423201 and a plating processing section 63o attached thereto, and an idling table 632 is disposed adjacent to the plating processing section 63o. In addition, an electrode arm portion 636 having an electrode tip 502 is provided. The electrode tip 502 is held at the front end of a swing arm 500 that swings about a rotating shaft 634 as a center. Between moves. A precoat recovery arm 638 and a fixed nozzle 640 that sprays a chemical liquid such as pure water or ion water and a gas toward the substrate ^ are disposed on the side of the plating processing section 63. In this embodiment, three fixed reference nozzles MO are provided, one of which is used for supplying pure water. Further, as shown in Fig. 46, a porous body 528 arranged in the anode chamber 530 is composed of three layers of porous materials, and has a multi-layered structure having spaces between the layers. That is, the porous body 528 is composed of a plating solution impregnating material 532 and a porous pad 534 composed of a lower pad 534a and an upper pad 534b. A knife is provided with an i-th space 642a between the lower pad 534a and the upper pad 534b. -A second space 642b is provided between the upper pad 534b and the plating solution impregnating material 532. • An i-th space is provided between the lower layer pad 534a and the upper layer pad 534b. 642a 'is provided inside the first space 642a and the lower layer pad 53 乜 located below it, and is mainly supplied with fresh plating solution and maintained in advance. The lower layer pad 534a supplies the fresh plating solution to the substrate W immediately before plating, and can use a small amount of plating solution supply to carry out power ore that often uses a new t-electrolyte solution. That is, in this example, as described below, by introducing a pressurized fluid inside the anode to 530 (upper part), and pressurizing the anode chamber with a pressure P1G, the plating solution in the anode to 530 is supplied to the substrate. Mainly in the first space 642a and the lower pad 53 below it 315432 70 200423201 The fresh key fluid is kept in advance, which prevents the plating solution in the anode chamber 53g from impregnating the anode 526 from mixing into the fresh key supplied to the substrate. liquid. Furthermore, by placing a second space 642b between the upper pad 534b and the plating solution impregnating material, the second space can be used. 6 Yang is mainly used as a space to hold the electric clock liquid, and it can be made to act as a barrier. The effect that the plating solution in which the anode 526 is immersed in the anode chamber 530 is mixed with the electroplating solution in the second space 亦 is a fresh plating solution.

由於在第1空間642a内導入新鮮電鍍液，或將第J 空間642a内的舊電鍍液與新鮮電鍍液更替，因此在上下移 動八又版522 δ又置朝第！空間642a吐出並供給電鍍液的電鍍 液供給部652,以及將第！空間642a内的電鍍液吸引並排 出的電鍵液排出部654，此兩者係設在位於上下移動殼體 522互相相對的直徑方向。電鍍液供給部652之構成係如 第47圖所示，具有設在面向上下移動殼體522的第}空間 642a之位置的複數個吐出口 656與通連該吐出口 656並貫 穿上下移動殼體522的連接口 658，且裝設電鍍液供給埠 660以通連該連接口 658。又電鍍液排出部654之構成係具 有設在面向上下移動殼體522的第i空間642a之位置的複 數個吸引孔662與通連該吸引孔662並貫穿上下移動殼體 522的連揍口 664,且裝設電鍍液排出埠666以通連該連接 口 664。 藉此，從電鍍液供給部652 —邊供給新鮮電鍍液到第 1空間642a内，一邊透過電鍍液排出部654從該第i空間 642a抽取私艘液，而能將第i空間642&内更換成新鮮電 315432 71 200423201 鍍液。 在電極頭502具有氣囊570，並具備按壓機構，以任 意的壓力將下層墊534a按壓在由基板台504所保持的基板 W表面（被電鍍面）。亦即在本例中，於旋轉殼體520的頂 壁下面與上下移動殼體522的頂壁上面之間配置環狀的氣 囊570，該氣囊570係透過加壓流體導入管572連接到加 ^ 壓流體供給源（未圖示）。藉此，於將搖動臂500固定在不 鲁能在電鍵處理部63〇上的預定位置（製程位置）上下移動的 狀態下’透過以壓力P9加壓氣囊570之内部，而形成以任 意的壓力將下層墊534a均勻地按壓在由基板台504所保持 的基板W表面（被電鑛面），並透過將上述壓力p9恢復到大 氣壓力，而解除對下層墊5 3 4a的按壓。 在上下移動叙體522裝設有’吸引陽極室530内電鑛 液的電鍵液吸引管574，及導入加壓流體的加壓流體導入 管5 76，在陽極526之内部設有多數個細孔526a。藉此， 電鍍液在將多孔質體528浸潰在電鍍液並將陽極室53〇加 . 以氣密性密封的狀態下，透過經電鍍液吸引管574吸引陽 極室530内的電鍍液，從多孔質體528朝陽極室53〇抽取， 並透過以壓力P10加壓陽極室530内部，供給到基板冒上 面。 第48圖係顯示將電極頭502移動到空轉台632之正 上方，再將其降下而將新鮮電鍍液供給到電極頭5〇2陽極 室530的狀態。空轉台632例如具有儲存新鮮電鍍液的電 鍍液槽600。而於儲存在該電鍍液槽6〇〇内的電鍍液中浸 315432 72 200423201 /貝夕孔貝體5 2 8，並將陽極室5 3 0内予以氣密性密封，在 此狀態下，透過經電鍍液吸引管574吸引陽極室53〇内的 電鍍液，將電鍍液槽600内的新鮮電鍍液從多孔質體528 朝陽極室530吸取。而以上述方式所吸引的新鮮電鍍液液 面，在到達第1空間642a上，最好在位至第2空間642匕 上方時，停止吸引電鍍液。藉此，在第」空間642&内部， 及位於其下方的下層墊53 4a内部，最好是在第2空間㈠孔 内部，及位於其下方的上層墊534b内部，主要保持新鮮電Since the fresh plating solution is introduced into the first space 642a, or the old plating solution and the fresh plating solution are replaced in the J space 642a, the Yayou 522 δ is moved up and down again! The space 642a discharges and supplies a plating solution supply portion 652, and supplies the first! The key liquid discharge portion 654 that is attracted and discharged by the plating solution in the space 642a is provided in a diameter direction opposite to each other in the up-and-down moving casing 522. As shown in FIG. 47, the plating solution supply part 652 has a plurality of discharge ports 656 provided at a position} space 642a facing the up-and-down movement case 522, and the discharge ports 656 are connected to the up-and-down movement case and pass through the up-and-down movement case. The connection port 658 of 522 is provided with a plating solution supply port 660 to communicate with the connection port 658. The plating solution discharge portion 654 has a plurality of suction holes 662 provided in a position facing the i-th space 642a of the up-and-down moving casing 522, and a flail opening 664 communicating with the suction holes 662 and penetrating the up-and-down moving casing 522. And a plating solution discharge port 666 is installed to communicate with the connection port 664. Thereby, while supplying fresh plating solution into the first space 642a from the plating solution supply unit 652, private liquid is extracted from the i-th space 642a through the plating solution discharge portion 654, and the i-th space 642 & can be replaced. Into fresh electricity 315432 71 200423201 plating solution. The electrode tip 502 includes a bladder 570 and a pressing mechanism, and presses the lower pad 534a against the surface (plated surface) of the substrate W held by the substrate stage 504 with an arbitrary pressure. That is, in this example, an annular airbag 570 is disposed between the lower surface of the top wall of the rotating housing 520 and the upper surface of the top wall of the up-and-down moving housing 522, and the airbag 570 is connected to the fuel tank through a pressurized fluid introduction pipe 572. Pressurized fluid supply source (not shown). Thereby, when the rocker arm 500 is fixed in a state where it cannot move up and down at a predetermined position (process position) on the key processing unit 63 °, the interior of the airbag 570 is pressurized with the pressure P9 to form a pressure to The lower-layer pad 534a is evenly pressed against the surface of the substrate W held by the substrate stage 504 (the surface to be galvanized), and the pressure of the lower-layer pad 5 3 4a is released by returning the pressure p9 to the atmospheric pressure. A key fluid suction pipe 574 that sucks the electric mineral fluid in the anode chamber 530 and a pressurized fluid introduction pipe 5 76 that introduces a pressurized fluid are installed in the up-and-down movement 522. A plurality of fine holes are provided inside the anode 526. 526a. With this, the plating solution is impregnated with the porous body 528 in the plating solution, and the anode chamber 53 is added. In a state of being hermetically sealed, the plating solution in the anode chamber 530 is sucked through the plating solution suction pipe 574, and The porous body 528 is drawn toward the anode chamber 53 and passed through the inside of the anode chamber 530 under a pressure P10 to be supplied onto the substrate. Fig. 48 shows a state where the electrode tip 502 is moved directly above the idler table 632, and then it is lowered to supply a fresh plating solution to the electrode tip 502 anode chamber 530. The idling stage 632 has, for example, an electroplating bath 600 that stores fresh plating bath. And immersed in the plating solution stored in the plating solution tank 600 315 432 72 200423201 / Bei Xi Kong Bei body 5 2 8 and hermetically sealed the anode chamber 5 30, in this state, permeate The plating solution in the anode chamber 53 is sucked through the plating solution suction pipe 574, and the fresh plating solution in the plating solution tank 600 is sucked from the porous body 528 toward the anode chamber 530. On the other hand, when the fresh plating solution level attracted by the above method reaches the first space 642a and is preferably positioned above the second space 642, the suction of the plating solution is stopped. In this way, in the "space 642 &" and the lower pad 53 4a located below it, preferably in the countersink of the second space and the upper pad 534b located below it, mainly fresh electricity is kept.

鍍液。此時的電鍍液吸引最好是在生產量不會下降的程度 範圍以緩慢的速度進行。 X 第49圖係顯示供給新鮮電鍍液於電極頭5〇2之暢極 室530的另-狀態。在此例的情況下，例如係冑新鮮電鑛 液充滿電鍍液槽600内部，或將電鍍液加以循環。然後， 將多孔質體528浸潰在該電鍍液槽6〇〇内的電鍍液中，並 將陽極室530内予以氣密性密封，在此狀態下，打開電鍍 液供給埠660供給新鮮電鍍液到第i空間M2a内之同時， 打開電鍍液排出埠666從第1空間642a抽取電鍍液，藉此 主要將第1空間642a内更換成新鮮電鍍液。然後在結束該 更換後，於停止來自電鍍液供給埠66〇的電鍍液供给之同 時，於關閉電鑛液排出4 666, „閉電鏟液排出痒— 後，在繼續短暫地供給來自電鍍液供給槔66〇的電鍍液之 後，停止該供給。此時電鍍液的更換最好在生產量不合下 降的程度範圍以緩慢的速度進行。又透過在電鑛液槽：〇〇 内部儲存新鮮電鑛液’在位於第1空@ 6仏下方的下層墊 315432 73 200423201 534a内部的一部分也可以更換新鮮的電鍍液。 依照本例，藉由前述的2個方法可在第1空間642a 之内部，最好是在位於其下方的下層墊534a之内部，更好 疋在第2空間642b之内部，及位於其下方的上層墊”仆 之内部，主要保持新鮮的電鍍液。 其-人，針對以該電鍍裝置進行電鍍時的操作加以 明。 。 首先，於將基板W吸附保持在基板台5〇4上面的狀態 下，使基板台504上昇，並令基板w周邊部與陰極電極 川接觸而形成可通電狀態，再使其上昇’並使密封材512 壓接在基板w之周邊部上面，以水密性密封基板w周邊 部。另，方面，電極頭502在空轉台63”，以前述的方 式在第1空严Θ1 642a之内部，最好是在位於其下方的下層塾 534a之内部，更好是在第2空間_之内部，及位於曰盆 下方的上職534b之内部，主要保持新鮮的電鑛液，缺後 將该電極頭502定位在預定之位置。亦即，透過一旦使搖 動臂5〇〇上昇再加以旋轉，使電極頭如位於基板台5〇4 t正上方位置’之後將其下降’於到達預定位置（製程位置） 日寸加以停止。然後，將陽極室53〇内加壓至壓力％，將由 電極頭502所保持的電鍛液從多孔質塾534的下面吐出。 —藉此，可-邊將保持在第⑷“仏等内部及位於該 :i空間642a下方的下層塾如内部等之電鑛液供給至 土板w’ 一邊防止與保持在陽極室53〇内浸漬於陽極… 的電鍍液之混入。 315432 74 200423201 接著，將加壓空氣導入於氣囊570内並將下層墊534a 往下方推壓，以預定的壓力按壓下層墊534a於基板W之 表面（被電鍍面）。在此狀態下，使電極頭502及基板台504 旋轉（自轉）。藉此，在電鍍前，透過一邊以任意的壓力將 下層墊534a按壓於由基板台504所保持的基板W之被電 鍍面，一邊使兩者相對移動，可提高下層墊534a與基板w 的密接性。 然後’在停止電極頭502及基板台504的旋轉後，分 別將陰極電極512連接到電鍍電源56〇的陰極，將陽極526 連接到電鍍電源560的陽極，藉此，對基板w之被電鍍面 施予電鍍。而在繼續進行預定時間的電鍍後，解除陰極電 極5 12及陽極526的與電鍍電源56〇之連接，同時將陽極 室530内恢復到大氣壓力，再令氣囊57〇内恢復到大氣壓 力。之後，使搖動臂500上昇，再將其旋轉使電極頭5〇2 回到原來的位置（空轉位置）。視需要反覆進行預定次數的 上述操作，在基板W之表面（被電鍍面）成膜足夠膜厚的銅 層7(參照第1B圖），以填埋配線用之微細凹部，而結束電 依照本發明，透過在具有多層構造的多孔質體之内部 預先保持新鮮電鍍液，於剛要電鍍之前藉由多孔質體供給 至基板，可防止浸潰於陽極的電鍍液混入供給至該美板2 新鮮電鍵液，能藉由較少量的供給電鐘液進行經常二用新 鮮電鍍液的電鍍，藉此可抑制電鍍液的消耗量。而且， 可很容易地對應使用多種電錢液的製程。 315432 75 200423201 (產業上的利用可能性） ϋ B月係關於一種電鍍裝置及電鍍方法，尤其是關於 形 ' ’體基板等基板上的微細配線圖案埋入銅等的 金屬（配線材料）以形成配線時所使用者。 【圖式簡單說明】 第1A圖至第1D圖，係顯示半導體裝置之配線形成例 的流程圖。 第2圖’係具備本發明實施形態之電鍍裝置的基板處 理裝置之俯視圖。 第3圖’係顯示第2圖所示之電鍍裝置的主要部分之 概要圖。 第4圖，係用以說明第3圖所示之電鍍裝置的電極頭 動作之時序圖。 第5圖，係顯示電鍍液管理供給系統之一例的系統Plating solution. The suction of the plating solution at this time is preferably performed at a slow rate within a range where the throughput is not reduced. X FIG. 49 shows another state of supplying fresh electroplating solution to the electrode compartment 502 of the electrode tip chamber 530. In this case, for example, the inside of the plating bath 600 is filled with fresh electric mineral bath, or the plating bath is circulated. Then, the porous body 528 is immersed in the plating solution in the plating solution tank 600, and the anode chamber 530 is hermetically sealed. In this state, the plating solution supply port 660 is opened to supply fresh plating solution. At the same time as in the i-th space M2a, the plating solution discharge port 666 is opened to extract the plating solution from the first space 642a, thereby mainly replacing the first space 642a with a fresh plating solution. After finishing the replacement, while stopping the supply of the plating solution from the plating solution supply port 66, the electric ore liquid discharge was shut down 4 666, “The electric shovel solution was discharged and itchy — and then the supply of plating liquid from the plating solution continued briefly. After supplying the plating solution of 〇66, stop the supply. At this time, the replacement of the plating solution is preferably performed at a slow speed within the range of the reduction in the production volume. It is also stored in the electric ore bath: 〇〇 fresh electric ore is stored inside The liquid can be replaced with a fresh plating solution in a part of the lower pad 315432 73 200423201 534a located below the first space @ 6 仏. According to this example, the two methods described above can be used inside the first space 642a. Fortunately, fresh plating solution is mainly kept inside the lower layer pad 534a located below it, more preferably inside the second space 642b, and inside the upper layer pad '' located below it. This person will explain the operation at the time of plating with this plating apparatus. . First, in a state where the substrate W is adsorbed and held on the substrate stage 504, the substrate stage 504 is raised, and the peripheral portion of the substrate w is brought into contact with the cathode electrode to form a current-carrying state. Then, the substrate W is raised and sealed. The material 512 is crimped onto the peripheral portion of the substrate w, and the peripheral portion of the substrate w is hermetically sealed. On the other hand, the electrode tip 502 is located in the idler stage 63 "in the aforementioned manner within the first air tightness Θ1 642a, preferably within the lower layer 塾 534a located below it, and more preferably in the second space. The interior, and the interior of the upper post 534b located below the basin, mainly maintains fresh electric mineral fluid, and the electrode head 502 is positioned at a predetermined position after the absence. That is, once the rocker arm is raised by 500 and then rotated If the electrode tip is positioned at a position directly above the substrate stage 504 t, and then it is lowered to a predetermined position (process position), it will be stopped. Then, the anode chamber 53 will be pressurized to a pressure%, and the electrode will be charged by the electrode. The electric forging fluid held by the head 502 is spit out from under the porous 多孔 534.-By this, the side can be kept inside the ⑷ "仏 and the like and the lower layer 塾 such as the inside of the i-space 642a. The liquid is supplied to the earth plate w 'to prevent mixing with the plating solution immersed in the anode ... kept in the anode chamber 53. 315432 74 200423201 Next, pressurized air is introduced into the airbag 570 and the lower pad 534a is pushed downward, and the lower pad 534a is pressed against the surface (plated surface) of the substrate W with a predetermined pressure. In this state, the electrode tip 502 and the substrate stage 504 are rotated (rotated). Thus, before plating, the lower pad 534a is pressed against the plated surface of the substrate W held by the substrate stage 504 with an arbitrary pressure, and the two are moved relative to each other, thereby improving the close contact between the lower pad 534a and the substrate w. Sex. Then, after the rotation of the electrode head 502 and the substrate stage 504 is stopped, the cathode electrode 512 is connected to the cathode of the plating power source 56 and the anode 526 is connected to the anode of the plating power source 560, respectively. Apply plating. After the plating is continued for a predetermined time, the cathode electrodes 512 and the anodes 526 are disconnected from the plating power source 56 and the anode chamber 530 is restored to atmospheric pressure, and the airbag 57 is restored to atmospheric pressure. After that, the swing arm 500 is raised, and it is rotated to return the electrode tip 502 to the original position (idling position). Repeat the above operations for a predetermined number of times as needed, forming a copper layer 7 (refer to FIG. 1B) with a sufficient thickness on the surface of the substrate W (the surface to be plated) to fill the fine recesses for wiring. According to the invention, by preserving a fresh plating solution inside a porous body having a multilayer structure, and supplying the porous body to the substrate immediately before plating, the plating solution immersed in the anode can be prevented from being mixed and supplied to the US plate 2 fresh The key solution can be used to perform electroplating with fresh electroplating solution often by supplying a small amount of electric clock liquid, thereby suppressing the consumption of the electroplating solution. Moreover, it can easily cope with a process using a plurality of types of liquid electrolyte. 315432 75 200423201 (Industrial application possibilities) ϋ The month B refers to a plating device and a plating method, and particularly to the formation of a fine wiring pattern on a substrate such as a body substrate by embedding a metal such as copper (wiring material) to form a fine wiring pattern. When wiring. [Brief description of the drawings] Figures 1A to 1D are flowcharts showing examples of wiring formation of a semiconductor device. Fig. 2 'is a plan view of a substrate processing apparatus including a plating apparatus according to an embodiment of the present invention. Fig. 3 'is a schematic view showing a main part of the plating apparatus shown in Fig. 2. Fig. 4 is a timing chart for explaining the operation of the electrode tip of the plating apparatus shown in Fig. 3. Fig. 5 is a system showing an example of a plating solution management and supply system

之一例 第6圖’係顯不第2圖所示之洗淨、乾燥裝置 的縱斷前視圖。 第7圖，係同上之俯視圖。 面洗淨裝 弟8圖’係顯示第2同挪— 弟2圖所不之斜面蝕刻、背 置之一例的概略圖。 第9圖，係顯示第2 斷前視圖。 圖所示之熱處理裝置 之 的縱 :10圖，係同上之平剖視圖。 第11圖，係第2圖所+夕a老 ^所不之刖處理裝置收送基板時之前 3J5432 76 200423201 視圖 $ 12ffi n之藥液處理時之前視 第13圖’係同上之清洗時之前視圖。 第14圖，係顯示同上之收送基板時 圖 圖 的處理頭之剖視 第15圖，係同篦 U弟14圖之A部放大圖。 第16圖’係同相當於笛 一 5圖之基板固定時的圖。 弟1 7圖’係同上之系統圖。 第18圖，係顯示第2圖所示之無電解電錄裝置之基 板收送時的基板頭之剖視圖。 土 第19圖，係同第18圖之B部放大圖。 19圖的 第20圖，係同顯示基板固定時的基板頭之第 相當圖 ISA η 第21圖，係同顯示電鍍處理時的基板頭之帛w 相當圖。 。、 第22圖，係同顯示關閉電鍍槽蓋時的電錢槽之部分 切斷的前視圖。 第2 3圖’ 同^示洗淨槽之剖視圖。 第24圖，係同上之系統圖。 第25圖’ ϋ纟頃示弟2圖所示之研磨梦晉 W Μ衣置之一例的概 要圖。 第26圖，係顯示第2圖所示之膜厚測試器之反轉機 附近的前視圖。 ’ 第27圖，係同上之反轉臂部分之俯視圖。 315432 77 200423201 第28圖’係第2圖所示之基板處理裝置之處理流程 圖。 弟29圖’係顯示本發明之其他實施形態的電鍍裝置 要部之概要圖。 第3 0圖’係顯示本發明之另一其他實施形態的電鍍 裝置要部之概要圖。 第3 1圖’係顯示本發明之另一其他實施形態的電鍍 _裝置要部之概要圖。 第32圖，係顯示本發明之另一其他實施形態的電鍍 裝置要部之概要圖。 第3 3圖，係顯示本發明之另一其他實施形態的電鍍 裝置之電極頭部的概要圖。 第3 4圖，係顯不具有第3 3圖所示之電極頭的電鍍裝 置之概要圖。 第35圖，係模式性顯示使用在實施例的試驗樣品圖。 - 第36圖，係顯示實施例的施加電壓、基板與多孔質 、 接觸體的接觸與非接觸及壓力施加狀況的圖。 第37圖，係模式性顯示由實施例所獲得之銅層之圖。 第38圖，係顯示本發明之電鍍析出狀況之圖。An example Fig. 6 'is a vertical front view of the washing and drying device shown in Fig. 2. Figure 7 is the top view of the same. Face cleaning equipment Figure 8 'is a schematic diagram showing an example of the second etching-backing of the bevel, which is not shown in Figure 2. Fig. 9 shows the second front view. The longitudinal view of the heat treatment apparatus shown in the figure: 10, which is the same plan sectional view as above. Figure 11 is shown in Figure 2 + before the old processing device before receiving the substrate 3J5432 76 200423201 view $ 12ffi n before the treatment of the liquid solution Figure 13 'before the same view during cleaning . FIG. 14 is a cross-sectional view of a processing head when the same substrate is sent and received as above. FIG. 15 is an enlarged view of part A of FIG. 14 of the same brother. Fig. 16 'is a diagram corresponding to Fig. 5 when the substrate is fixed. Brother 17 'is the same system diagram as above. Fig. 18 is a cross-sectional view showing the substrate head when the substrate of the electroless recording device shown in Fig. 2 is received and delivered. Soil Figure 19 is an enlarged view of Part B of Figure 18. Fig. 19 is a diagram corresponding to the substrate head when the display substrate is fixed. ISA η Fig. 21 is a diagram corresponding to the substrate head 帛 w during the plating process. . Fig. 22 is a front view showing a part of the electric money slot when the plating slot cover is closed. Fig. 23 is a sectional view of the washing tank. Figure 24 is the same system diagram as above. Fig. 25 'is a schematic diagram showing an example of the grinding Mengjin W Μ clothes shown in Fig. 2. Fig. 26 is a front view showing the vicinity of the reversing machine of the film thickness tester shown in Fig. 2; Figure 27 is a top view of the reversing arm portion as described above. 315432 77 200423201 Figure 28 'is a processing flow chart of the substrate processing apparatus shown in Figure 2. Figure 29 'is a schematic diagram showing the main parts of a plating apparatus according to another embodiment of the present invention. Fig. 30 'is a schematic diagram showing the main parts of a plating apparatus according to another embodiment of the present invention. Fig. 31 'is a schematic diagram showing a main part of a plating apparatus according to another embodiment of the present invention. Fig. 32 is a schematic view showing a main part of a plating apparatus according to another embodiment of the present invention. Fig. 33 is a schematic view showing an electrode head of a plating apparatus according to another embodiment of the present invention. Fig. 34 is a schematic view showing a plating apparatus without the electrode tip shown in Fig. 33. Fig. 35 is a diagram schematically showing a test sample used in the example. -Fig. 36 is a diagram showing the applied voltage, the substrate and the porous body, the contact and non-contact of the contact body, and the state of pressure application in the example. Fig. 37 is a view schematically showing a copper layer obtained in the embodiment. Fig. 38 is a view showing the plating precipitation conditions of the present invention.

第39圖，係顯示本發明之另一其他實施形態的電鍍 裝置之要部的概要圖。 X 第40圖，係排除存在於第39圖所示之錢裝置的多 孔質體與基板之被電鍍面之間所產生間隙内的電鍍液時之 315432 78 200423201 弟41圖’係顯示本發明 I月之另一其他實施形悲的電鍍 裝置之要部的概要圖。 第42圖，係顯示本發明之 ^ ^ ^ ^ ' 十私ΛΙ <另一其他實施形態的電鍍 裝置之要部的概要圖。 弟43圖’係顯示本發明夕里 ^ t +知明之另一其他實施形態的電鍍 裝置之要部的概要圖。 第44圖，係排除存在於第43圖所示之電鍍裝置的多 孔質體與基板之被電鑛面之間所產生間隙内的電鍍液時之 說明圖。 第45圖，係本發明之另一其他實施形態的電鍍裝置 之俯視圖。 第46圖，係顯示以第45圖所示之電鍍裝置進行電鍍 時的狀態之概略剖視圖。 第47圖，係顯示第45圖所示之電鍍裝置之電鍍液供 給部與電鑛液排出部的上下移動殼體之剖視圖。 第48圖，係顯示以第45圖所示之電鍍裝置供給新鮮 電鍵液於電極頭陽極室的狀態之概略剖視圖。 第49圖，係顯示以第45圖所示之電鍍裝置供給新鮮 電鍍液於電極頭陽極室的狀態之另一例的概略剖視圖。 第50圖，係存在於習知例的多孔質體與基板被電鍍 面之間所產生間隙内的電鍍液狀態之說明圖。 (元件符號說明） 1 半導體基材 la 導電層 2 絕緣膜 3 穿孔 315432 79 200423201Fig. 39 is a schematic diagram showing a main part of a plating apparatus according to another embodiment of the present invention. X FIG. 40 is a diagram 315432 78 200423201 when the plating solution existing in the gap between the porous body and the plated surface of the substrate shown in FIG. 39 is excluded. FIG. 41 shows the invention I This is a schematic diagram of the main part of another form of electroplating apparatus that implements sadness. Fig. 42 is a schematic diagram showing a main part of a plating apparatus according to another embodiment of the present invention. Figure 43 'is a schematic diagram showing a main part of a plating apparatus according to another embodiment of the present invention. Fig. 44 is an explanatory diagram when the plating solution existing in the gap generated between the porous body of the plating apparatus shown in Fig. 43 and the substrate surface of the substrate is excluded. Fig. 45 is a plan view of a plating apparatus according to another embodiment of the present invention. Fig. 46 is a schematic cross-sectional view showing a state when plating is performed using the plating apparatus shown in Fig. 45. Fig. 47 is a cross-sectional view showing an up-and-down moving casing of a plating solution supply section and a power liquid discharge section of the plating apparatus shown in Fig. 45; Fig. 48 is a schematic cross-sectional view showing a state in which a fresh key liquid is supplied to the anode chamber of the electrode head by the plating apparatus shown in Fig. 45. Fig. 49 is a schematic cross-sectional view showing another example of a state in which a fresh plating solution is supplied to the electrode tip anode chamber by the plating apparatus shown in Fig. 45. Fig. 50 is an explanatory diagram of a state of a plating solution existing in a gap generated between a porous body of a conventional example and a surface to be plated of a substrate. (Description of element symbols) 1 semiconductor substrate la conductive layer 2 insulating film 3 perforation 315432 79 200423201

4 溝渠 5 阻障層 6 晶種層 7 銅層 8 配線 9 保護膜 10 搬運箱 12 裝置框 14 裝卸台 16 搬運機器人 18 電鍍裝置 20 洗淨乾燥裝置 22 斜面蝕刻背面洗淨裝置 24 膜厚測試器 26 熱處理裝置 28 前處理裝置 30 無電解電鍍裝置 32 研磨裝置 50 框架 52 固定框 54 移動框 56、 230 殼體部 58 基板托架 60 處理頭 62 伺服馬達 64 輸出轴 70 球接頭 72 軸承 74 昇降用汽缸 76 線型導執 80 主框 82 導框 84 密封環 86 基板固定壞 88 彈簧 90 推桿 92 風箱 100 處理槽 102 蓋體 104 腳部 106 曲軸 108 移動蓋體用汽缸 110 拉桿 112 、124 喷嘴板 122 藥液幫浦 126 、127 排水管 128、 306 三通閥 80 315432 200423201 130 回歸管 132 清洗液供給源 200 電鍍槽 204 基板頭 232 頭部 234 吸附頭 236 基板座 238 旋轉基板用馬達 240 驅動用基板座汽缸 242 輸出轴 244 旋轉接頭 246 ^ 726 制動器 250 吸附環 252 真空線 254 爪部 256 凸起片 256a 傾斜面 302 電鑛液儲槽 304 電鍍液供給幫浦 308 電鍍液供給管 3 12 電鍍液回流管 3 16 加熱器 318 流量計 320 熱交換器 322 加熱裝置 324 攪拌幫浦 330 電鍍液管理裝置 332 溶解氧濃度計 339 反轉機 353 反轉臂 355 裝設台 420 失持機構 422 > 504、922 基板台 424 昇降板 426、 710 主軸 428 洗淨杯 430 藥液用喷嘴 432 純水用喷嘴 434 洗淨海綿 436 旋轉臂 438 空氣導入口 500 搖動臂 502、 701 電極頭 504a 真空通道 504b 真空吸附溝 504c 加壓用凹部 504d 加壓流體通道 506 陰極部 81 315432 200423201 508、 510、 •708 密封 環 512、 712 陰極電 514 密 封 材 520 旋轉 殼 體 522 上 下 移 動 殼體 524 旋轉 體 526 ^ 704 陽 極 526a 細孔 528 多 孔 質 體 530 陽極 室 532、 703 電 鍍 液含 浸材534 多孔 質 墊 534a 下 層 墊 534b 上層 墊 540 第 1 氣 囊 542 第2 氣 囊 544 有 底 圓 筒 體 546 第3 氣 囊 550、552、554、558 加壓流體導入管 556 電鍍液導入管 560 電鍍電源 562 供電埠 590 壓電振動器 592 超音波振動器 594 壓力琿 596 開關閥 598 真空幫浦 600 電鍍液托盤 602 電鍍液排出管 604 儲存器 606 λ 616 幫浦 608 電鍍液調整槽 610 溫度控制器 612 電鐘液分析早元 614 成份補給管 618 電鍍液供給管 620 過濾器 630 電鍍處理部. 63 2 空轉台 634 旋轉轴 636 電極臂部 638 回收臂 640 固定喷嘴 642a 第1空間 642b 第2空間 652 電鍍液供給部 654 電鍍液排出部 82 315432 200423201 656 吐出口 658 ^ 664 連接口 660 電鍍液供給埠 662 吸引孔 702 多孔質接觸體 709 氣囊 721 統合控制部 722 施加電壓控制部 723 電鍍電源 724 運動控制部 725 加壓幫浦 820 研磨布 822 研磨台 824 頂環 826 研磨液喷嘴 828 打磨機 920 有底圓筒狀防水蓋 921 旋轉夾頭 924 中央喷嘴 926 周邊部喷嘴 928 背部喷嘴 1000 閘門 1002 爐 1004 加熱板 1006 冷卻板 1008 昇降銷 1010 氣體導入管 1012 氣體排氣管 1014 過濾器 1016 氮氣導入路 1018 氫氣導入路 1020 混合器 1022 混合氣體導入路 A 多孔質體 P 被電鐘面 PI、P2 、P3 、 P4 、 P5 、 P6 、P7、 P8 壓力 S 間隙 Q 電鍍液 W 基板4 Ditch 5 Barrier layer 6 Seed layer 7 Copper layer 8 Wiring 9 Protective film 10 Carrying case 12 Device frame 14 Loading and unloading station 16 Carrying robot 18 Electroplating device 20 Washing and drying device 22 Bevel etching back cleaning device 24 Film thickness tester 26 Heat treatment device 28 Pre-treatment device 30 Electroless plating device 32 Grinding device 50 Frame 52 Fixed frame 54 Moving frame 56, 230 Housing portion 58 Substrate bracket 60 Processing head 62 Servo motor 64 Output shaft 70 Ball joint 72 Bearing 74 Lifting Cylinder 76 Linear guide 80 Main frame 82 Guide frame 84 Seal ring 86 Substrate fixation 88 Spring 90 Push rod 92 Bellows 100 Processing tank 102 Cover 104 Foot 106 Crankshaft 108 Cylinder for moving cover 110 Tie rod 112, 124 Nozzle plate 122 Chemical liquid pumps 126, 127 Drain pipes 128, 306 Three-way valve 80 315432 200423 201 130 Return pipe 132 Cleaning liquid supply source 200 Plating tank 204 Substrate head 232 Head 234 Suction head 236 Substrate holder 238 Motor for rotating substrate 240 Driving Base plate cylinder 242 Output shaft 244 Rotary joint 246 ^ 726 Brake 250 Suction ring 252 Vacuum line 25 4 Claws 256 Raised pieces 256a Inclined surface 302 Electro-mineral liquid storage tank 304 Electroplating liquid supply pump 308 Electroplating liquid supply tube 3 12 Electroplating liquid return tube 3 16 Heater 318 Flow meter 320 Heat exchanger 322 Heating device 324 Stirrer Pu 330 Plating liquid management device 332 Dissolved oxygen concentration meter 339 Reversing machine 353 Reversing arm 355 Mounting table 420 Loss mechanism 422 > 504, 922 Substrate table 424 Lifting plate 426, 710 Spindle 428 Washing cup 430 Chemical solution Nozzle 432 Nozzle for pure water 434 Washing sponge 436 Rotary arm 438 Air inlet 500 Swing arm 502, 701 Electrode head 504a Vacuum channel 504b Vacuum suction groove 504c Pressurized recess 504d Pressurized fluid channel 506 Cathode section 81 315432 200423201 508, 510, • 708 Sealing ring 512, 712 Cathode electricity 514 Sealing material 520 Rotating case 522 Up and down case 524 Rotating body 526 ^ 704 Anode 526a Fine pores 528 Porous body 530 Anode chamber 532, 703 Plating solution impregnating material 534 Porous Pad 534a Lower pad 534b Upper pad 540 First airbag 542 Second airbag 544 Bottom cylindrical body 546 Third air bag 550, 552, 554, 558 Pressurized fluid introduction tube 556 Plating liquid introduction tube 560 Plating power supply 562 Power supply port 590 Piezo vibrator 592 Ultrasonic vibrator 594 Pressure 珲 596 On-off valve 598 Vacuum Pump 600 plating bath tray 602 plating bath discharge pipe 604 reservoir 606 λ 616 pump 608 plating bath adjustment tank 610 temperature controller 612 clock liquid analysis early element 614 component supply pipe 618 plating bath supply pipe 620 filter 630 plating treatment 63 2 Idler 634 Rotary shaft 636 Electrode arm section 638 Recovery arm 640 Fixed nozzle 642a First space 642b Second space 652 Plating solution supply section 654 Plating solution discharge section 82 315432 200423201 656 Discharge outlet 658 ^ 664 Connection port 660 Plating Liquid supply port 662 Suction hole 702 Porous contact body 709 Air bag 721 Integration control unit 722 Applied voltage control unit 723 Plating power supply 724 Motion control unit 725 Pressurized pump 820 Polishing cloth 822 Polishing table 824 Top ring 826 Polishing liquid nozzle 828 Polisher 920 Bottom cylindrical waterproof cover 921 Swivel chuck 924 Central nozzle perimeter Nozzle 928 Back nozzle 1000 Gate 1002 Furnace 1004 Heating plate 1006 Cooling plate 1008 Lifting pin 1010 Gas introduction pipe 1012 Gas exhaust pipe 1014 Filter 1016 Nitrogen introduction route 1018 Hydrogen introduction route 1020 Mixer 1022 Mixed gas introduction route A Porous body P Clock face PI, P2, P3, P4, P5, P6, P7, P8 Pressure S Clearance Q Plating solution W Substrate

83 31543283 315432

Claims (1)

200423201 拾、申請專利範圍： 、保持電鍍液的電鍍 孔質接觸體之電極 1 · 一種電鍍裝置，係具有：包含陽極 液含浸材料及接觸基板表面的多 頭； 電極； 多孔質接觸體按壓在200423201 Scope of patent application: Electrode of porous contact body that maintains the plating solution 1 · An electroplating device having: multiple heads containing an anode liquid impregnating material and contacting the surface of a substrate; electrodes; a porous contact body pressed on 接觸基板並加以通電的陰極 輕重自如地將前述電極頭的 基板表面的按壓機構； 施加電鍍電壓於前述陽極與前 電源；以及 述陰極電極之間 的 2·如申請專利範圍第1項的電鑛裝 接觸體’係由聚乙烯、聚丙稀、 醯亞胺、碳化矽或礬土所形成。 將按壓前述電極頭的多孔質接觸體於基板表面之 狀態’與施加在前述陽極和前述陰極電極之間的電錢電 壓的狀態互相建立關連並加以控制之控制部。 置，其中，前述多孔質 I酸胺、聚碳酸醋、聚The cathode that contacts the substrate and is energized can press the pressing mechanism of the substrate surface of the electrode tip lightly; apply a plating voltage between the anode and the front power source; The contact body is formed of polyethylene, polypropylene, ammonium, silicon carbide or alumina. A control unit that controls and controls the state of the porous contact body pressing the electrode tip on the substrate surface and the state of the electric voltage applied between the anode and the cathode electrode. Where the porous I acid amine, polycarbonate, poly j ·如甲請寻 一 〜八 丫 含浸材料，係由陶瓷或多孔質塑膠所形成 4 ·如申請專利範圍第1項的 接觸體之至少接觸基板表 高的物質所形成1。 電鍍裝置，其中，前述多孔質 面之面，係由絕緣物或絕緣性 如申清專利範圍第1項的電鍍裝置，其中，前述控制部 係將前述多孔質接觸體及基板的至少_方控制成自轉 或公轉之方式。 6· —種電鍍裝置，係具有 包含保持基板的基板台、抵接 84 315432 423201 周噏j圮基板台所保持的基板被電鍍面周邊部並將該 :部予以水密性封裝的封裝材料、接觸 的陰極電極之陰極部； 上下活動自如地配置在前述陰極部 具備陽極與具保水性之多孔質體的電極頭；並在上下 =前㈣極與以前述基板台所料的基板被電鑛 曰1注入電鍍液的電鍍液注入部； 台所：Γ迷多孔質體以任意的虔力按慶在由前述基板 :厂乂的基板被電鍍面’並使其從該被電鍍面分離的 换壓分離機構；以及 電源施加電鑛電塵於前述陰極電極與前述陽極之間的 7· ^申請專利範圍第6項的電鍍裝置，其中，係具有令以 别述基板台所保持的基板與 之相對移動機構。、引“極頭產生相對移動 .如申凊專利範圍第7項的電 動播m 也戮展置’其中，雨述相對移 ，由令前述基板台或前述電極頭的至〜少 生疑轉的旋轉機構所組成。 9·如申請專利範圍第8項的電鍍裝置，其中，具 測旋轉前述基板台或前述電極 ^ 的旋轉轉矩之轉矩感測器。的…方時所賦予 1(^°申請專利範圍第6項的電鍍農置，其中，前述 離機構係具有以氣壓伸缩將么 i刀 柘 > 厂頁甲^將則迷多孔質體朝向前述美 板按壓之氣囊。 4基 315432 85 200423201 11.如申請專利範圍第10項的 & 係以接觸前述陽極或前述夕"，/、中，則述氣囊 質體以水平狀態上下二孔二㈣ 12·如申請專利範圍第6項 成 體係具有至少積層2種以：？=，其中，前述多孔質 13 4由冰糞利r fi μ 夕孔貝材料的多層構造。 13·如申凊專利乾圍第10項的電鍍裝置…一 頭係具有用以將前述陽極盥 ，、則述電極 區隔形成以前述多孔質體堵=氧囊收納在内部’並且 殼體。 …者基下端開口部之陽極室的 14.如申請專利範圍第13項的電鑛裝置，^， 室係具有圓筒形的形狀。 則述陽極 •如申請專利範圍第13項的電鍍裝置， a 中係裝設有通連前述氣囊的氣體導入管:將；：述殼體 於前述陽極室内部的電鐘液導入管及供電二=入 的供電口。 則述％極 16·如申請專利範圍第13項的電鍍裝置， — 分離機構係具有使前述殼體上下移動的氣囊、述㈣ 1 7·如申咕專利範圍第1 3項的電鍍裝置，其中、 前述殼體或前述基板台朝上下、左右或圓二更具有使 振機構。 , 、向振動的加 18·如申請專利範圍第13項的電鍍裝置，其中， 度控制機構，以控制前述陽極室内的電鍍液、更:有服 極與由前述基板台所保持的基板被電録 及則述陽 液之液溫。 之間的電鍍 315432 86 200423201 1 9 ·如申請專利笳A , 圍昂6項的電鍍裝置，其中，前述基 係以吸附載置在兮I y σ 在忒基板台上面的基板周邊部背面並將 基板保持成水平之同日n心❹ 式構成。 】 < 万 20.如申：專利範圍第6項的電鍍裝置，其中，具有用以加 =:則述基板台所保持的基板或前述多孔質體之加 機構。 ί :鍍衣置’係、具有：包含保持基板的基板台、抵接 述基板台所保持的基板之被電鑛面周邊部並將 +二=邛予以水密性封裝的封裝材料、接觸該基板並通 电的陰極電極之陰極部； 上下活動自如地配置在前述陰極部之上方，並在上 下具備陽極與具保水性之多孔質體的電極頭； 錄面==陽極與以前述基板台所保持的基板之被電 間庄入電鍍液的電鍍液注入部； 台所Γ則迷多孔質體以任意的壓力按麼在由前述基板 °呆持的基板之被電鍍面之按壓機構…卜 知加電鍍電壓於前述陰極電極與前述陽極之間的 电/原；以及 所二任意的壓力按壓前述多孔質體於由前述純台 被^的基板之被電鍍面時，將存在於前述多孔質體與 機^面之間的間隙之電鑛液予以排除之電鍵液排除 22.如申請專·圍第21項的電鍍裝置，其中，前述電鑛 315432 87 200423201 液排除機構係由使以前述基板台所保持的基板、前述多 孔貝體以及注入到前述陽極與以前述基板台所保持的 基板之被電鍍面之間的電鍍液中的至少2個產生相對 運動之機構所構成。 认如申請專利範圍第21項的電鍵裝置，其中，前述電鑛 液排除機構係由使以前述基板台所保持的基板、前述多 孔貝虹以及主入到爾述陽極與以前述基板台所保持的 基板之被電鍍面之間的電鐘液中的至少、1個產生振動 之機構所構成。 k如申請專利範圍第21項的電鍍裝置，其中，前述· 液排除機構係由將以前述基板台所保持的基板、前述多 Hi二及注入到前述陽極與以前述基板台所保持的 基板被電鍍面之間的雷供 △所伴持… 的至少1個，朝與由基板 構所構成。 由严直之方向產生振動之機 申請專利範圍第23項或第24項的電鍍裝置，其中， 5 f Γ動的機構係利用超音波者，或使用利用激磁 線圈的加振機者。 概 26.=::利範圍第23項或第2"的電鑛裝置，其中， 别=振動的機構係由㈣振動器所構成。 .二=利範圍第23項或第24項的電鍍農置，其中， ^ 辰動的機構係利用壓力振動者。 .如申請專利範圍第21項的電鍍裝置，其 液排除機構係呈右 述電鍍 八有於内部收納前述陽極並以前述多孔 315432 88 質體堵塞開口古山立 壓力控制邻。而部的陽極室’及控制該陽極室内壓力的 29.—種電鍍裝置 在以前述基“〜、有.包含保持基板的基板台、抵接 該周邊“以持的基板之被電錢面周邊部並將 雄性封裝的封裝材料、接觸該基板並通 电的陰極電極之陰極部； 丁目i下活冑自如地配置在前述陰極部之上方，並在上 八備：極與具保水性之多孔質體的電極頭； 在則連陽極與以前述基板台所保持的基板之被電 鍍面,間注入電鍍液的電鍍液注入部；以及 施加電鍍電壓於前述陰極電極與前述陽極之間的 電源； 月J述夕孔吳體係具有至少積層2種以上多孔質材 料的多層構造。 3〇·如申明專利乾圍第29項的電鍍裝置，纟中，前述電極 頭係具有用以將前述陽極收納在内部，並區隔形成以前 述多孔質體堵塞下端開口部之陽極、室的殼體。 31·如申請專利範圍第3〇項的電鍍裝置，#中，在前述殼 體係設有吸引前述陽極室内部的電鍍液之電鍍液吸引 管、將加壓流體導入於前述陽極室吶部的加壓流體.導入 管以及供電給前述陽極的供電口。 32·如申請專利範圍第29項的電鍍裝置，其中，在構成前 述多層構造的多孔質材料之間，至少形成有1個空間。 33.如申請專利範圍第32項的電鍍裝置，其中，係具有朝 315432 89 形成在前述多孔質材之間的空間吐出並供給電鍍液的 電錢液供給部，以及吸引並排出前述空間内的電鍍液之 電鍵液排出部。 ο 4 ·〜種電鐘的方法，係準備具有由晶種層所覆蓋的配線用 微細凹部之基板， 在前述晶種層的表面與該晶種層隔著預定的間隔 所配置的陽極之間透過多孔質接觸體供給電鍍液， 於在前述晶種層與前述陽極之間施加電鍍電壓以 進行電鐘時， 使施加在前述晶種層與前述陽極之間的電鍍電壓 之狀態變化’與前述多孔質接觸體與前述晶種層之間的 按壓狀態變化形成相互關連。 5 ·如申印專利範圍第3 4項的電鍍方法，其中，前述多孔 貝接觸體與前述晶種層之間的按壓狀態變化，係前述多 孔質接觸體與前述晶種層之間的壓力變化。 •士申吻專利範圍第3 4項的電鍍方法，其中，施加在前 返曰θ種層與七述陽極之間的電鍍電壓之狀態變化，係施 在&述3曰種層與前述陽極之間的電鍍電壓之斷續。 37·如I請專利範圍第34項的電鍍方法，其中，係透過在 冬$ ^夕孔貝接觸體與前述晶種層表面之間的壓力相 2 ϋ提同日寸施加電鍍電壓，而在將前述多孔質接觸體與 月:述晶種層之間的壓力降低至比前一狀態相對性為低 時不施加電無命两 A戮包昼的方式，使施加在前述晶種層與前述 才S之間的雷$ 尾錢笔塵之狀態變化，與前述多孔質接觸體 90 315432 200423201 與前述晶種層之間的按壓狀態變化形成相互關連β 3=申凊專利範圍第34項的電鍍方法，&中，前述多孔 2觸體與前述晶種層之間的按壓狀態變化，係前述多 子貝接觸體與前述晶種層表面之接觸與非接觸的變 39.如申請專利範圍第 +义、+、 4貝的電鍍方法，其中，係使施加 乂日曰，種層與前述陽極t間的電鍍電壓之狀態變 :與別述多孔質接觸體與前述晶種層之間的按壓狀態 受：:和前述多孔質接觸體與前述晶種層表面之接觸、 舁則达晶種層與前述陽極之間的電鍍電壓之施加形成 相互同步的關連。 後^請專利範圍第34項的電鍍方法，其中，係以於前 L質鋒觸體與前述晶種層表面非接觸時不施加電 鍍電壓在前述晶種層與前述陽極之間，而於前述多孔質 接觸體與前述晶種層表面接觸後的經過—定時間後施 加％ $壓在則述晶種層與前述陽極之間的方式，使施 加在前述晶種層與前述陽極之間的電鑛電壓之狀態變 化努刚述夕孔貝接觸體與前述晶種層之間的按壓狀能 變化產生關連。 〜 1 ·種電鑛方法，係準備具有由晶種層所覆蓋的配線用微 細凹部之基板， 在前述晶種層的表面與隔著預定的間隔所配置的 陽極之間配置具有保水性的多孔質體， 而方、月J述曰曰種層與前述陽極之間一邊充滿電鑛液 315432 91 200423201 邊通電以進行電艘時’ 以任意的壓力一邊將前述多孔質體按壓於前述晶 種層，一邊於前述晶種層與前述陽極之間進行通電以從 事電鑛。 42.如申請專利範圍第41項的電錢方法，其中，係於通電 前述晶種層與前述陽極之間以進行電鐵之前，一邊以任 意的壓力將前述多孔質體按壓於前述晶種層，一邊令兩 者相對移動。 43 ·如申請專利範圍第4 1項的電鍍方法，其中，係於製程 中解除别述晶種層與前述陽極之間的通電，使前述多孔 質體離開前述晶種層。 種電鍵方法，係準備具有由晶種層所覆蓋的配線用微 細凹部之基板 在别述晶種層的表面與隔著預定的間隔所配置的 陽極之間配置具有保水性的多孔質體， 而於前述晶種層與前述陽極之間一邊充滿電鍍液 一邊通電以進行電鍍時，j · Please find one to eight as in the above. Impregnating materials are made of ceramics or porous plastics. 4 · For example, the contact body of the patent application No. 1 is at least in contact with the surface of the substrate. In the electroplating device, the surface of the porous surface is an insulator or an electroplating device having an insulation property as described in item 1 of the patent application scope, wherein the control unit controls at least one of the porous contact body and the substrate. Into rotation or revolution. 6 · A plating device having a substrate stage including a holding substrate, abutting 84 315432 423201 Zhou 噏 j 圮 the substrate is held on the periphery of the plated surface, and the: part is sealed with a watertight packaging material, The cathode part of the cathode electrode; an electrode head provided with an anode and a porous body with water-retaining property at the cathode part which can be moved up and down freely; Plating solution injection section of the liquid; Taiwan Institute: the porous body is arbitrarily pressed on the plated surface of the substrate: the substrate to be plated and separated from the plated surface; and The electroplating device applying electric power, electricity, and dust between the aforementioned cathode electrode and the aforementioned anode, No. 6 in the scope of patent application No. 6, wherein the electroplating device has a mechanism for relatively moving the substrate held by the substrate substrate and the relative substrate. "Induction of relative movement of the poles. For example, the electric range m of the seventh item in the patent scope of the patent application is also displayed. Among them, the relative movement of the rain is determined by making the aforementioned substrate stage or the aforementioned electrode head at least suspicious. Rotating mechanism. 9. The electroplating device according to item 8 of the scope of patent application, wherein a torque sensor is provided to measure the rotational torque of the aforementioned substrate table or the aforementioned electrode ^. 1 (^ ° The electroplating farm for item 6 of the scope of patent application, wherein the above-mentioned separation mechanism is provided with an air-stretched blade > factory sheet ^ The airbag which presses the porous body toward the aforementioned US board. 4 base 315432 85 200423201 11. If the & item 10 of the scope of the patent application is to contact the anode or the aforementioned evening " ,,,,, the airbag plastid is horizontally two holes up and down. Xiangcheng system has at least two kinds of laminated layers:? =, Wherein the aforementioned porous material 13 4 is made of a multilayer structure of ice dung material r fi μ xi Kongbei material. 13. The electroplating device of the tenth item of the dry wall of Rushen patent ... One end has The electrode compartment is formed with the aforementioned porous body plug = the oxygen capsule is accommodated in the interior 'and the case.… 14. The anode compartment of the anode opening at the lower end of the base. ^ The chamber has a cylindrical shape. The anode is described. • For the electroplating device in the thirteenth of the scope of the patent application, a gas introduction tube connected to the aforementioned air bag is installed in the a: The casing is on the anode. The electric clock liquid introduction pipe and the power supply port of the interior of the room. The poles are described as follows. 16. For the electroplating device in the thirteenth of the scope of patent application, the separation mechanism has an air bag that moves the housing up and down. 17. The electroplating device according to item 13 of the scope of the patent application of Shengu, wherein the housing or the substrate table has a vibrating mechanism facing up, down, left or right. The electroplating device according to item 13, wherein the degree control mechanism controls the electroplating solution in the anode chamber, and further: the electrode and the substrate held by the substrate stage are recorded and the temperature of the anolyte is recorded. Plating 315432 86 200423201 1 9 · If you apply for the patent 笳 A, the plating equipment of 6 items, in which the aforementioned system is placed on the back of the substrate peripheral part on the substrate base of 忒 I y σ by adsorption and keeps the substrate horizontal On the same day, the structure is n-hearted.] ≪ 10,000. If applied: The electroplating device of item 6 of the patent scope, which has a mechanism for adding the substrate held by the substrate table or the aforementioned porous body. Ί : Plating coat system, which includes: a substrate table including a holding substrate, a sealing material that abuts on the periphery of the substrate surface of the substrate held by the substrate table, and seals + 2 = 邛 in a water-tight package, contacts the substrate, and energizes The cathode part of the cathode electrode; The electrode head which is movably arranged above the aforementioned cathode part and provided with an anode and a porous body with water retention on the upper and lower sides; Recording surface == anode and the substrate held by the aforementioned substrate table The electroplating solution injection part of the electroplating solution is inserted in the battery room; the platform Γ is used to press the porous body at any pressure on the plated surface of the substrate held by the substrate °. Pressing mechanism ... When the electroplating voltage is between the cathode electrode and the anode; and when the porous body is pressed on the electroplated surface of the substrate covered by the pure stage with any arbitrary pressure, it will exist between the porous body and the porous body. Electric key liquid to be removed in the gap between the machine and the surface. For example, if you apply for the electroplating device of item 21, the aforementioned electric ore 315432 87 200423201 liquid removal mechanism is held by the aforementioned substrate table. At least two of the substrate, the porous shell, and the electroplating solution injected between the anode and the plated surface of the substrate held by the substrate stage are configured to generate relative movement. It is considered that the electric key device of the scope of application for the patent No. 21, wherein the electric ore liquid removing mechanism is composed of a substrate held by the substrate stage, the porous beijing, and a substrate mainly held in the anode and the substrate held by the substrate stage. At least one of the clock liquids between the plating surfaces is a mechanism that generates vibration. k The electroplating device according to item 21 of the scope of patent application, wherein the liquid removal mechanism is a surface to be plated by injecting the substrate held by the substrate stage, the multiple Hi 2 and the anode and the substrate held by the substrate stage. At least one of the ... provided by the thunderbolt △ is composed of a substrate structure. A machine that generates vibration from a straight direction. The electroplating device with the scope of patent application No. 23 or No. 24, in which the 5 f Γ moving mechanism is a person using an ultrasonic wave, or a person using a vibration exciter. 26. = :: The power mining device of item 23 or 2 ", wherein the mechanism of vibration is composed of a vibrator. .2 = Electric plating farms in the 23rd or 24th of the profit range, where ^ Chen Dong's mechanism uses pressure vibration. For example, the electroplating device in the scope of patent application No. 21, the liquid removal mechanism is the electroplating as described on the right. The anode is housed inside and the opening is closed by the aforementioned porous 315432 88 mass. The anode chamber of the inner part and the 29.-type electroplating device that controls the pressure in the anode chamber are based on the aforementioned base "~, there is. A substrate table including a holding substrate, and the periphery of the charged surface of the substrate abutting the periphery" And the male part of the encapsulating material, the cathode part of the cathode electrode that contacts the substrate and is energized; the upper part of the chombo is freely arranged above the aforementioned cathode part, and is prepared on the top eight: extremely porous body with water retention A plating solution injection section that injects a plating solution between the anode and the plated surface of the substrate held by the substrate stage; and a power source for applying a plating voltage between the cathode electrode and the anode; The Xikongwu system has a multilayer structure in which at least two kinds of porous materials are laminated. 30. If the electroplating device of item 29 of the patent is declared, the electrode head is provided with an anode and a chamber for accommodating the anode therein and partitioning the anode and the chamber which block the lower opening with the porous body. case. 31. For the electroplating device of the 30th in the scope of patent application, in #, the casing is provided with a plating solution suction pipe that attracts the plating solution inside the anode chamber, and a pressurized fluid is introduced into the anode chamber na Pressurized fluid. An inlet pipe and a power supply port for supplying power to the anode. 32. The electroplating apparatus according to claim 29, wherein at least one space is formed between the porous materials constituting the aforementioned multilayer structure. 33. The electroplating device according to item 32 of the scope of patent application, wherein the electroplating liquid supply unit discharges and supplies the electroplating solution to the space formed between the porous materials 315432 89, and attracts and discharges the liquid in the space. The key liquid discharge part of the plating solution. ο 4 · A method of an electric clock, which comprises preparing a substrate having a fine recess for wiring covered by a seed layer, and between the surface of the seed layer and an anode arranged at a predetermined interval from the seed layer. The plating solution is supplied through the porous contact body, and when a plating voltage is applied between the seed layer and the anode to perform an electric clock, the state of the plating voltage applied between the seed layer and the anode is changed. The change in the pressing state between the porous contact body and the seed layer is related to each other. 5. The electroplating method according to item 34 of the scope of application for a patent, wherein the change in the pressing state between the porous shell contact body and the seed layer is a change in pressure between the porous contact body and the seed layer. . • The plating method of item 34 of the Shishen kiss patent, wherein the state change of the plating voltage applied between the θ seed layer and the seventh anode is applied to the & third seed layer and the aforementioned anode. Intermittent plating voltage. 37. For example, the plating method according to item 34 of the patent scope, wherein the plating voltage is applied through the pressure phase between the contact surface of the porous shell contact body and the surface of the seed layer in the winter. In the manner in which the pressure between the porous contact body and the seed layer is lower than that in the previous state when the relative state is low, no electrical life is applied and the two A-batteries are used to make the day, so that the pressure applied to the seed layer and the foregoing The change in the state of the thunder coin between S and the pen and dust is related to the change in the pressing state between the aforementioned porous contact body 90 315432 200423201 and the aforementioned seed layer β 3 = The electroplating method of the 34th patent application In &, the change in the pressing state between the porous 2 contact body and the seed layer is a change in contact and non-contact between the multi-shell contact body and the surface of the seed layer. 39. The method of plating of +, +, and 4 shells, wherein the state of the plating voltage between the seed layer and the anode t is changed on the following day: the pressed state between the porous contact body and the seed layer Accepted :: and the porous contact body Contacting the surface of the seed layer is formed of the cock interrelated synchronization of plating voltage is applied between the seed layer and the anode. The method of electroplating according to item 34 of the patent scope is based on the fact that the front L mass contact body is not in contact with the surface of the seed layer without applying a plating voltage between the seed layer and the anode, and Elapsed time after the porous contact body contacts the surface of the seed layer-after a certain period of time, a% pressure is applied between the seed layer and the anode, so that the electricity applied between the seed layer and the anode is applied. Changes in the state of the mine voltage are related to the change in the pressing energy between the contact hole and the seed layer. ~ 1 · An electric ore method, in which a substrate having fine recesses for wiring covered by a seed layer is prepared, and a water-retaining porous is arranged between the surface of the seed layer and an anode arranged at a predetermined interval. The mass body, and between the seed layer and the anode is filled with electric mineral liquid 315432 91 200423201 while energizing to carry out the electric boat 'while pressing the porous body against the seed layer with an arbitrary pressure On one side, electricity is applied between the seed layer and the anode to engage in power mining. 42. The electric money method according to item 41 of the scope of patent application, wherein the porous body is pressed against the seed layer with an arbitrary pressure before applying electricity between the seed layer and the anode for electric iron. , While moving the two relative. 43. The electroplating method according to item 41 of the patent application scope, wherein the energization between the other seed layer and the anode is released during the manufacturing process, so that the porous body leaves the seed layer. A method of bonding is to prepare a substrate having a fine recess for wiring covered by a seed layer, and arrange a porous body having water retention between the surface of another seed layer and an anode arranged at a predetermined interval, and When the electroplating is performed while the electroplating solution is filled between the seed layer and the anode, 1述多孔質體按壓於前述晶種層 述多孔質體與晶種層之間的電锻 晶種層與前述陽極之間以進行.電The porous body is pressed between the porous body and the seed layer by electroforging between the porous body and the seed layer to perform between the seed layer and the anode. 46·—種基板處理裝置，係具有 項的電鍍方法，其中，係僅在前 L層接觸時進行通電。 315432 92 ‘喝23201 搬進搬出基板的裝卸台( — load station); 置； 申明專利範圍帛1項至第33工員中任一項的電鍍裝 洗 >尹並乾燥基板的洗淨乾燥裝置，以及 運运基板於刚述裝卸台、前述電鍍裝置及前述洗淨 乾燥裝置之間的運送裝置。 2明專利靶圍第46項的基板處理裝置，其中更具有 2磨衣i ’以研磨去除利用前述電鑛裝置成膜在基板表 4 的不要之金屬膜並使之平坦化。 熱^專利範圍第46項的基板處理裝置，其中更具有 ^ =里|置，以對利用前述電鍍I置成膜有金的 板進行熱處理。 專T範圍第46項的基板處理裝置，其中更具有 邛的=衣置，以蝕刻去除附著且成膜加工在基板周邊 1的金屬膜。 ::::專利範圍第46項的基板處理裝置，其中更具有 :盘：’：監視施加電鍍電廢於前述電鍍裝置的前述陽 方:―極電極之間時的電壓值或電流值的至少一 膜I:::乾圍第46項的基板處理裝置，其中更具有 、、DI益，以測試成膜在基板表面的金屬膜之膜厚。 315432 9346. A substrate processing apparatus having the method of plating, wherein the current is applied only when the front L layer is in contact. 315432 92 'drink 23201 loading and unloading board (— load station); placement; declared patent scope 帛 1 to 33rd worker plating plating washing &drying; Yin and dry substrate washing and drying device, And a transportation device for transporting the substrate between the loading and unloading station just described, the aforementioned electroplating device, and the aforementioned washing and drying device. The substrate processing device of item 46 of the Ming patent has a grinding mill i 'to grind, remove and flatten the unnecessary metal film formed on the substrate Table 4 by the aforementioned electric mining device. The substrate processing apparatus according to item 46 of the patent, which further includes a substrate, is used to heat-treat a plate formed with gold using the aforementioned plating I. The substrate processing apparatus for item 46 of the special T range further includes 邛 = clothing, which removes the metal film adhered and formed on the substrate periphery 1 by etching. :::: The substrate processing device according to item 46 of the patent, which further includes: a disk: ': monitors the aforementioned anode side of the electroplating device to which electroplating is applied:-at least the voltage value or current value between the electrodes A film I ::: Dry around the substrate processing device of item 46, which also has a DI and a DI to test the film thickness of the metal film formed on the substrate surface. 315432 93
TW093101713A 2003-01-23 2004-01-27 Plating apparatus and plating method TWI322452B (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2003015236A JP4312465B2 (en) 2003-01-23 2003-01-23 Plating method and plating apparatus
JP2003149827A JP4423354B2 (en) 2003-05-27 2003-05-27 Plating method
JP2003161237A JP4423355B2 (en) 2003-06-05 2003-06-05 Plating equipment
JP2003161236A JP4361760B2 (en) 2003-06-05 2003-06-05 Plating method

Publications (2)

Publication Number Publication Date
TW200423201A true TW200423201A (en) 2004-11-01
TWI322452B TWI322452B (en) 2010-03-21

Family

ID=32777148

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093101713A TWI322452B (en) 2003-01-23 2004-01-27 Plating apparatus and plating method

Country Status (4)

Country Link
US (1) US20060113192A1 (en)
KR (2) KR20050092130A (en)
TW (1) TWI322452B (en)
WO (1) WO2004065664A1 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110777421A (en) * 2018-07-24 2020-02-11 富士施乐株式会社 Plating apparatus and method for manufacturing plated member
CN112805415A (en) * 2018-10-03 2021-05-14 朗姆研究公司 Apparatus for inert anode plating tank
US20220016739A1 (en) * 2020-07-14 2022-01-20 Applied Materials, Inc. Methods of detecting non-conforming substrate processing events during chemical mechanical polishing

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050051437A1 (en) * 2003-09-04 2005-03-10 Keiichi Kurashina Plating apparatus and plating method
JP4872199B2 (en) * 2004-09-06 2012-02-08 ルネサスエレクトロニクス株式会社 Semiconductor manufacturing equipment
JP4808453B2 (en) 2005-08-26 2011-11-02 株式会社荏原製作所 Polishing method and polishing apparatus
JP4519037B2 (en) * 2005-08-31 2010-08-04 東京エレクトロン株式会社 Heating device and coating / developing device
US20070238261A1 (en) * 2006-04-05 2007-10-11 Asml Netherlands B.V. Device, lithographic apparatus and device manufacturing method
US8246808B2 (en) * 2008-08-08 2012-08-21 GM Global Technology Operations LLC Selective electrochemical deposition of conductive coatings on fuel cell bipolar plates
JP5321574B2 (en) * 2010-12-17 2013-10-23 ルネサスエレクトロニクス株式会社 Method of operating semiconductor manufacturing apparatus and method of manufacturing semiconductor device
US9221081B1 (en) 2011-08-01 2015-12-29 Novellus Systems, Inc. Automated cleaning of wafer plating assembly
SG11201406133WA (en) 2012-03-28 2014-10-30 Novellus Systems Inc Methods and apparatuses for cleaning electroplating substrate holders
TWI609100B (en) 2012-03-30 2017-12-21 諾發系統有限公司 Cleaning electroplating substrate holders using reverse current deplating
US9746427B2 (en) * 2013-02-15 2017-08-29 Novellus Systems, Inc. Detection of plating on wafer holding apparatus
US10416092B2 (en) 2013-02-15 2019-09-17 Lam Research Corporation Remote detection of plating on wafer holding apparatus
GB2512056B (en) * 2013-03-18 2018-04-18 Spts Technologies Ltd Electrochemical deposition chamber
US10385471B2 (en) 2013-03-18 2019-08-20 Spts Technologies Limited Electrochemical deposition chamber
CN103147103A (en) * 2013-03-25 2013-06-12 任晓方 Electro-brush plating power source controlled by touch screen
GB201403558D0 (en) 2014-02-28 2014-04-16 P2I Ltd Coating
CN103966637B (en) * 2014-05-08 2016-06-01 广西大学 Brush plating experiment porch
JP6176235B2 (en) 2014-12-26 2017-08-09 トヨタ自動車株式会社 Metal film forming apparatus and film forming method
CN104808370B (en) * 2015-05-22 2017-10-31 合肥京东方光电科技有限公司 It is a kind of to cartridge device, alignment method
US10053793B2 (en) 2015-07-09 2018-08-21 Lam Research Corporation Integrated elastomeric lipseal and cup bottom for reducing wafer sticking
US11339488B2 (en) * 2019-02-19 2022-05-24 Achínibahjeechin Intellectual Property, LLC System and method for controlling a multi-state electrochemical cell
CN112609221A (en) * 2020-11-27 2021-04-06 徐家文 Iron metal plating device for adjusting buffer liquid amount by using volume change height
KR102518086B1 (en) * 2021-06-04 2023-04-06 가부시키가이샤 에바라 세이사꾸쇼 plating device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2002A (en) * 1841-03-12 Tor and planter for plowing
US3616286A (en) * 1969-09-15 1971-10-26 United Aircraft Corp Automatic process and apparatus for uniform electroplating within porous structures
BE789028A (en) * 1971-12-10 1973-01-15 Buckbee Mears Co PROCESS FOR THE DEPOSIT OF METALS ON LOW-DIMENSIONAL CONDUCTORS FIXED ON FLEXIBLE SUPPORTS
JP3167317B2 (en) * 1990-10-18 2001-05-21 株式会社東芝 Substrate processing apparatus and method
US6878259B2 (en) * 1998-10-14 2005-04-12 Faraday Technology Marketing Group, Llc Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates
JP2000232078A (en) * 1999-02-10 2000-08-22 Toshiba Corp Plating method and apparatus
US6632335B2 (en) * 1999-12-24 2003-10-14 Ebara Corporation Plating apparatus
US6736952B2 (en) * 2001-02-12 2004-05-18 Speedfam-Ipec Corporation Method and apparatus for electrochemical planarization of a workpiece
US6773570B2 (en) * 2002-11-14 2004-08-10 International Business Machines Corporation Integrated plating and planarization process and apparatus therefor
US7025860B2 (en) * 2003-04-22 2006-04-11 Novellus Systems, Inc. Method and apparatus for the electrochemical deposition and removal of a material on a workpiece surface

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110777421A (en) * 2018-07-24 2020-02-11 富士施乐株式会社 Plating apparatus and method for manufacturing plated member
CN112805415A (en) * 2018-10-03 2021-05-14 朗姆研究公司 Apparatus for inert anode plating tank
US20220016739A1 (en) * 2020-07-14 2022-01-20 Applied Materials, Inc. Methods of detecting non-conforming substrate processing events during chemical mechanical polishing

Also Published As

Publication number Publication date
KR20110042245A (en) 2011-04-25
WO2004065664A1 (en) 2004-08-05
US20060113192A1 (en) 2006-06-01
TWI322452B (en) 2010-03-21
KR20050092130A (en) 2005-09-20

Similar Documents

Publication Publication Date Title
TW200423201A (en) Plating apparatus and plating method
KR100773164B1 (en) Apparatus for plating substrate, method for plating substrate, electrolytic processing method, and apparatus thereof
TWI291732B (en) Substrate treating device and substrate treating method
JP4540981B2 (en) Plating method
TW564478B (en) Apparatus and method for treating a substrate
JP2005146398A (en) Plating method and plating apparatus
TW573068B (en) Plating apparatus and method
TW200302295A (en) Electroless deposition apparatus
WO2002090623A1 (en) Copper plating bath and method for plating substrate by using the same
JP2014201835A (en) Electric plating method
JP2003197591A (en) Substrate processing apparatus and method
TW200300179A (en) Substrate processing apparatus and method
TW201247946A (en) Electroplating method
US20050023149A1 (en) Plating apparatus, plating method and substrate processing apparatus
JP2008098449A (en) Substrate processing apparatus and substrate processing method
CN1742119B (en) Plating method
TW200402785A (en) Substrate processing apparatus and substrate processing method
JP2005133187A (en) Plating apparatus and plating method
US20070181441A1 (en) Method and apparatus for electropolishing
KR20040012814A (en) Electroless plating method and device, and substrate processing method and apparatus
JP4423354B2 (en) Plating method
JP3907432B2 (en) Electrolytic solution for electropolishing and electropolishing method
JP2003306793A (en) Plating apparatus and plating method
JP4423358B2 (en) Plating apparatus and plating method
JP4361760B2 (en) Plating method

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees