TW200422250A - Electrochemically fabricated hermetically sealed microstructures and methods of and apparatus for producing such structures - Google Patents

Abstract

In some embodiments, multilayer structures are electrochemically fabricated from at least one structural material (e.g. nickel), at least one sacrificial material (e.g. copper), and at least one sealing material (e.g. solder). In some embodiments, the layered structure is made to have a desired configuration which is at least partially and immediately surrounded by sacrificial material which is in turn surrounded almost entirely by structural material. The surrounding structural material includes openings in the surface through which etchant can attack and remove trapped sacrificial material found within. Sealing material is located near the openings. After removal of the sacrificial material, the box is evacuated or filled with a desired gas or liquid. Thereafter, the sealing material is made to flow, seal the openings, and resolidify. In other embodiments, a post-layer formation lid or other enclosure completing structure is added.

Description

玫、發明說明： 【發明所屬之技術領域】 發明領域 在腔穴内 本發明概括有關經由沉積材料的逐層積造來電化學製 造及相關聯地形成三維結構之領域。特定言之，有_成 微結構及同時形朗於料結構之封裝體，譬如藉以從封 裝體的内部腔穴移除可犧牲材料並將結構的關鍵部分密封 發明背景 考漢（Adam L· Cohen)發明一種用於自數個黏附薄層形 成三維結構(譬如零件、組件、&件及類似物)之技術且其稱 為電化學製造。其可為購自加州勃班克的麥費卡公司 (Microfabrica Inc·)之品名efabtm。此技術描述於2〇〇〇年2 月22日發證的美國專利案6,〇27號。此電化學沉積技術 可以使用一獨特的遮罩技術來選擇性沉積一材料，其中包 含在一與其上發生鍍覆的基材呈獨立之支撐結構上使用一 包括經圖案化_性材料的料。要使用遮罩進行電 沉積時，在存在一鍍覆溶液的同時使遮罩的貼附性部分接 觸-基材’所以遮罩的貼附性部分對於基材之接觸係抑制 住選定位置的沉積。為了方便起見，這些遮罩一般可能稱 為貼附性接觸遮罩，此遮罩技術一般可稱為貼附性接觸遮 罩鍍覆方法。更具體言之，在加州勃班克的麥費卡公司 (MiCr0fabrica Inc·)之術語中，此等遮罩已經稱為instan丁 200422250 MASKS™而此方法稱為INSTANT MASKING™或 INSTANT MASK™鍍覆。採用貼附性接觸遮罩鍍覆的選擇 性沉積係可用來形成單層的材料或者可用來形成多層結 構。’630號專利案的原理以引用方式整體併入本文中。自 5 從導致上述專利案之專利申請案提交時起算，已經公開了 關於貼附性接觸遮罩鍍覆（亦即INSTANT MASKING)及電 化學製造之各種文件： l.A.Cohen，G.Zhang，F.Tseng，F.Mansfeld，U.Fridis及 P.Will，“EFAB :具有微尺度特性的功能性完全密集基材零 馨 10 件之批次製造”，第9屆固體自由製造之會議記錄，德州大 學奥斯汀分校，pl61，1998年8月。 2_A.Cohen，G.Zhang，F.Tseng，F.Mansfeld，U.Fridis及 Ρ·Will，“EFAB :高尺寸比真3-D MEMS的快速低成本桌上型 微機械加工”，第12屆IEEE微機電系統研討會之會議記錄， 15 IEEE，p244，1999年1 月。 3. A.Cohen，“利用電化學製造的3-D微機械加工”，微機 元件，1999年3月。 鲁 4. G.Zhang，A.Cohen，U.Fridis，F.Tseng，F.Mansfeld及 P.Will，“EFAB :真3-D微結構之快速桌上型製造，，，第2屆國 ‘ 2〇 際太空應用的積體微奈米技術之會議記錄，The Aerospace ·Description of the invention: [Technical field to which the invention belongs] Field of the invention In the cavity The present invention summarizes the fields related to electrochemical fabrication and the related formation of three-dimensional structures through the layer-by-layer construction of deposited materials. In particular, there are packages that are microstructured and simultaneously shaped in a material structure, such as by removing sacrificial materials from the interior cavity of the package and sealing key parts of the structure. BACKGROUND OF THE INVENTION Adam L. Cohen ) Invented a technique for forming three-dimensional structures (such as parts, assemblies, & parts, and the like) from several adhesive thin layers and is called electrochemical manufacturing. It can be purchased under the trade name efabtm from Microfabrica Inc. of Burbank, California. This technique is described in US Patent No. 6,027, issued February 22, 2000. This electrochemical deposition technique can use a unique masking technique to selectively deposit a material, which includes a material including a patterned material on a support structure that is separate from the substrate on which plating occurs. When using a mask for electrodeposition, the adhesive part of the mask is brought into contact with the substrate while a plating solution is present-so the contact between the adhesive part of the mask and the substrate suppresses the deposition at the selected position. . For convenience, these masks may generally be referred to as adhesive contact masks, and this masking technique may generally be referred to as an adhesive contact mask plating method. More specifically, in the terms of MiCr0fabrica Inc., Bobank, California, these masks have been called instan 200422250 MASKS ™ and this method is called INSTANT MASKING ™ or INSTANT MASK ™ plating . Selective deposition systems using adherent contact mask plating can be used to form a single layer of material or can be used to form a multilayer structure. The principles of the ' 630 patent are incorporated herein by reference in their entirety. Since the filing of the patent application that led to the above patent case, various documents regarding the adhesion of contact mask plating (also known as INSTANT MASKING) and electrochemical manufacturing have been disclosed: l ACohen, G. Zhang, F. Tseng, F. Mansfeld, U. Fridis, and P. Will, “EFAB: Batch Manufacturing of 10 Pieces of Functionally Completely Dense Substrate with Microscale Characteristics”, Minutes of the 9th Solid Free Manufacturing Conference, University of Texas University of Austin, pl61, August 1998. 2_A. Cohen, G. Zhang, F. Tseng, F. Mansfeld, U. Fridis, and P. Will, "EFAB: Fast and Low-cost Desktop Micromachining of True 3-D MEMS with High Size Ratio", 12th Session Proceedings of the IEEE MEMS Symposium, 15 IEEE, p244, January 1999. 3. A. Cohen, "3-D Micromachining by Electrochemical Manufacturing", Microcomputer Components, March 1999. Lu 4. G. Zhang, A. Cohen, U. Fridis, F. Tseng, F. Mansfeld, and P. Will, "EFAB: Fast 3-D Manufacturing of True 3-D Microstructures ,, 2nd Country ' Minutes of Integrated Micronano Technology Conference on Space Applications, The Aerospace ·

Co.，1999年4月。 5. F.Tseng，U.Fridis，G.Zhang，A.Cohen，F.Mansfeld及 P.Will，“EFAB :使用低成本自動化批次方法之高尺寸比任 意3-D金屬微結構”，第3屆國際高尺寸比微結構技術之研討 6 200422250 會(HARMST’99)，1999年6 月。 6. A.Cohen，U.Fridis，F.Tseng，G.Zhang，F.Mansfeld及 P.Will，“EFAB:任意3-D金屬微結構之自動化電化學批次製 造”，微機械加工及微製造處理技術，SPIE 1999微機械加 5 工及微製造會議，1999年9月。 7. F.Tseng，G.Zhang，U.Fridis，A.Cohen，F.Mansfeld及 P.Will，“EFAB :使用低成本自動化批次方法之高尺寸比任 意3-D金屬微結構”，MEMS會議，ASME 1999國際機械工 程會議及博覽會，1999年11月。 10 8·Α.Cohen，“電化學製造(EFABTM)”，MEMS手冊第 19 章，由 Mohamed Gad-El-Hak編輯，CRC Press，2002。 9·“微製造-快速原型的殺手級應用，，，快速原型報告的 第1至5頁，CAD/CAM出版公司，1999年6月。 這九項文件的揭示以整體引用方式併入本文中。 15 冑化學沉積製程可以如上列專利案及文件所述的數種 不同方式進行。在一形式令，此製程包含在待形成之結構 的各薄層形成期間執行三種分開的操作： 、1.糟由電沉積將至少_材料選擇性沉積在—基材的一 或多個所需要區上。 〜2.然後’藉由電沉積來毯覆沉積至少一額外材料，使 件料>儿積物覆蓋住先前被選擇性沉積之區以及未接收任 何先前施加的選擇性沉積物之基材區。 3.最後’將第_及第二操作期間沉積的材料加以平面 化，以產生具有所需要厚度之第一薄層的平滑狀表面，其 7 具有包含至少一材料之至少一區及包含至少另一材料之至 少一區。 第一薄層形成之後，可與緊接在前的薄層相鄰地形成 額外的一或多層且將其黏附至該前層的平滑狀表面。藉由 一次或多次重覆第一至第三操作來形成這些額外的薄層， 其中各後續薄層的形成係將先前形成的薄層及初始基材處 理成為一新且增厚的基材。 一所有薄層的形成皆已完成之後，一般藉由一餘刻 製程來移除至少一所沉積材料的至少一部分，以暴露或釋 放出預定形成之三維結構。 用於進行第一操作所包含的選擇性電沉積之較佳方法 係利用貼附性接觸遮罩鍍覆。在此型鍍覆中，首先形成一 或多個貼附性接觸(cc)遮I。cc遮罩包括一支撐結構且在 其上黏附或形成-經圖案化貼附性介電材料。根據所鑛覆 材料的特定橫剖面來定出各鱗的貼附性材料形狀。對於 所鍍覆之各獨特橫剖面圖案，需要至少一cc遮罩。 CC遮罩的支撐件通常係為由—選擇性電鍵且可自其 溶解所鍍覆材料之金屬形成之_板狀結構。此典型途徑 中，支撐件將在㈣製程巾料陽極。另—途徑中，支撐 件可另為夕孔或其他穿孔狀材料，在電鍍操作期間沉積 材料從纟端陽極到一沉積表面之過程中將穿過此多孔或 穿孔材料。任-途#中，cc遮罩可能共用一共同支撐件， 亦即可將狀鍍❹層材料之貼附性介電材料關案定位 在單-支撐結構的不同區域中。當單—支撐結構包含多種 200422250 鑛覆圖案時，整濟姓 “次遮罩”。本申〜籌稱為0^遮罩而個別鍍覆遮罩則稱為 區分。 5 10 準傷用於進行第—操作的選擇性沉積時，將CC遮罩的 =性置成為對⑽抵住可在其上發生沉積之基 材：〜擇部分(或-先前形成的薄層上或-薄，的一 ===上）心料及基將㈣抵合併W使 $罩的軸性部分中之開***有«溶液。與基材接觸 之CC遮罩_附性材料係作為對於電沉積之障壁，而 有電鑛溶液之CC遮罩中的開口則在供應一適當電位及/或 電流時作為將材料從—陽極（譬如cc遮罩支撐件)轉移至基 材的未接觸部分(在鑛覆操作期間作為陰極）之路徑。土 15 凊案中，只有作出特定觀點時才進行此種 第1(a)至1(c)圖顯示一CC遮罩及cc遮罩鍍覆的一範 例。第1(a)圖顯示在-陽極12上圖案化的—貼附性或可變形 (譬如彈性體)絕緣體10所組成之一cc遮罩8的側視圖。陽極 具有兩種功能。第1(a)圖亦描繪一與遮罩8分離之基材6。因 為圖案可具有拓樸複雜性（譬如包含絕緣體材料之隔離的 “島”），其一功能係作為圖案化絕緣體丨〇之支撐材料以維持 其整體性及對準。另一功能係作為電鍍操作之—陽極。cc 遮罩鍍覆係簡單地將絕緣體壓抵住基材然後經由絕緣體中 的開孔26a及26b將材料電沉積藉以使沉積材料22選擇性、、冗 積在一基材6上，如第1(b)圖所示。沉積之後，如第i(c)圖 所示，CC遮罩較佳以非破壞性方式自基材6分離。cc遮罩 鍍覆製程與“貫穿遮罩（through-mask)，，鍍覆製程之區別在 20 200422250 於：-貫穿遮罩錢覆製程中，遮罩材料與基材將以破壞性 方式發生分離。如同貫穿遮罩錄覆，cc鮮鍍覆將材料選 擇性且同時地沉積在整體薄層的上方。經鍍覆的區可由」 或多個隔離的錢覆區所組成，其中這些經隔離的錢覆區可 5能屬於被形成之單-結構或可能屬於同時被形成之多個結 構。cc遮罩鍵覆中，由於個別遮罩在移除程序中未被刻意 破壞，其在多重錢覆操作中仍可使用。 第1(d)至1(f)圖顯示一cc遮罩及cc遮罩鍍覆之另一範 例。第1(d)圖顯不一陽極12’，且此陽極12，與一含有一經圖 讀| 10案化貼附性材料10,及一支撐結構2〇之遮罩8，分離。第咐） 圖亦描緣與遮罩8’分離之基材6。第1(e)圖顯示遮罩8,接觸 到基材6。第1(f)圖顯不從陽極12，將一電流傳導至基材$所 產生之沉積物22’。第1(g)圖顯示自遮罩8,分離後之基材石上 的沉積物22’。在此範财，一適當電解質定位在基材螭 15陽極12,之間，且來自溶液與陽極其中一或兩者之一離子電 ^系傳導經過遮罩中的開口前往可供材料沉積之基材。此 型遮罩可稱為無陽極INSTANT masktm(aim)或無陽極貝占 · 附性接觸（CC)遮罩。 +同於貝穿料錢覆，CC遮罩鑛覆可使cc遮罩形成為 上可仏务生錢覆之基材製造呈現完全分離（譬如與一 ， 被形成之二維⑽結構分離XC遮罩可以多種不同方式形 t .如可使用一光微影製程。可在結構製造之前而非製 造期間，同時地產生所有遮罩。此分離可能產生一種簡單、 &成本、自動化、自我包含且内部乾淨而可裝設在幾乎任 10 200422250 何地點用來製造犯結構之“桌上型工廠，，，故留下了可由服 務當局或_單元進行之諸如光微影等任何理想的 製程。 '、 乐主：5(C)圖 10 15 20 包儿甲装适糸統: 的各種組件。系統32由數個次系統34、％、38及4〇所组成 基材固持次系統34描繪於第3⑷至3_的上部且包化 個組件··⑴-載體48，⑺—金屬基材6，其上可供薄〜 積’及⑺-線性滑件42 ’其能夠回應來自致動諸細 力使基材6相對於賴48往上及往下移動。次系統柯^ -用於量測基材的垂直位置差異之指示器扑，且” 來設定或決定薄層厚度及/或_厚度。次純咐b 括可精密地安裝在次綠36上之用於载體#的足部I =下部所示之CC遮罩次系統%包括數個組件: J :實際由制—共同支撐件/陽極12之《 ^ )框⑽，其上可安裝次系統抑 ㈣’其用於容納電解fl6。次系統34及 ^) 電連接部（未圖*)!!以純m 匕括適以 當電源。 错連接至肖於驅動cc遮罩製程之d件：=系統38顯示:第3(b)圖下部且包括_ "(2)一電解質槽64，其用於容納電铲溶、名 66’及(3)框架74 谷'、内電鍍“ 統38亦包括心㈣ 的足部6化接。次秀 用於驅動連接部（未圖示）藉以將陽極連接至-動％覆〉儿積製程之適當的電源供應器。Co., April 1999. 5. F.Tseng, U.Fridis, G.Zhang, A.Cohen, F.Mansfeld, and P.Will, "EFAB: High-Dimension Ratio Arbitrary 3-D Metal Microstructures Using Low-Cost Automated Batch Methods", No. The 3rd International Symposium on Microstructure Technology with High Size Ratio 6 200422250 (HARMST'99), June 1999. 6. A. Cohen, U. Fridis, F. Tseng, G. Zhang, F. Mansfeld and P. Will, "EFAB: Automated Electrochemical Batch Manufacturing of Any 3-D Metal Microstructure", Micromachining and Micro Manufacturing Processing Technology, SPIE 1999 Micromechanical Processing and Microfabrication Conference, September 1999. 7. F.Tseng, G.Zhang, U.Fridis, A.Cohen, F.Mansfeld, and P.Will, "EFAB: High-Dimension Ratio Arbitrary 3-D Metal Microstructures Using Low-Cost Automated Batch Methods", MEMS Conference, ASME 1999 International Mechanical Engineering Conference and Expo, November 1999. 108. Cohen, "Electrochemical Manufacturing (EFABTM)," Chapter 19 of the MEMS Handbook, edited by Mohamed Gad-El-Hak, CRC Press, 2002. 9. "Micromanufacturing-The Killer Application of Rapid Prototyping,", pages 1 to 5 of the Rapid Prototyping Report, CAD / CAM Publishing Company, June 1999. The disclosures of these nine documents are incorporated herein by reference in their entirety. 15 胄 The chemical deposition process can be performed in several different ways as described in the patents and documents listed above. In one form, this process involves performing three separate operations during the formation of each thin layer of the structure to be formed: 1. In addition, at least _ material is selectively deposited on one or more required areas of the substrate by electrodeposition. ~ 2. Then, at least one additional material is blanket-deposited by electrodeposition to make the material > Covers previously selectively deposited areas and substrate areas that did not receive any previously applied selective deposits. 3. Finally 'planarizes' the material deposited during the second and third operations to produce the desired thickness The smooth surface of the first thin layer 7 has at least one region containing at least one material and at least one region containing at least another material. After the first thin layer is formed, it may be adjacent to the immediately preceding thin layer. Land formation The one or more outer layers are adhered to the smooth surface of the front layer. These additional thin layers are formed by repeating the first to third operations one or more times, wherein the formation of each subsequent thin layer is previously The formed thin layer and the initial substrate are processed into a new and thickened substrate.-After the formation of all thin layers has been completed, at least a portion of at least one of the deposited materials is generally removed by a etch process to A predetermined three-dimensional structure is exposed or released. A preferred method for performing the selective electrodeposition included in the first operation is plating using an adhesive contact mask. In this type of plating, one or more are first formed An adhesive contact (cc) mask I. The cc mask includes a support structure and is adhered or formed thereon-a patterned adhesive dielectric material. The scales are determined according to the specific cross section of the cladding material. The shape of the adhesive material. For each unique cross-section pattern that is plated, at least one cc mask is required. The support of the CC mask is usually a metal with selective electrical bonding and from which the plated material can be dissolved. Formation of _ plate-like structure. This In the type approach, the support will be in the anode of the process. In another approach, the support may be another hole or other perforated material. During the plating operation, the material will be deposited from the anode to a deposition surface. Through this porous or perforated material. In any-way #, the cc mask may share a common support, that is, the attachable dielectric material of the stell-like plated layer material can be positioned differently in the single-support structure. In the area. When the single-support structure contains a variety of 200422250 ore cover patterns, rectify the surname "second mask". This application is referred to as a 0 ^ mask and individual plated masks are called divisions. 5 10 quasi-injury For selective deposition of the first operation, set the mask of the CC mask to oppose the substrate on which deposition can occur: ~ Selection (or-on a previously formed thin layer or-thin (1 === top) The expectation and basis will be combined so that the opening in the axial portion of the cover contains a solution. The CC mask in contact with the substrate_adherent material is used as a barrier to electrodeposition, and the opening in the CC mask with electro-mineral solution is used as For example, the path of a cc mask support) to a non-contact portion of the substrate (as a cathode during a mining operation). In the case of the 15th case, such a case is carried out only when a specific point is made. Figures 1 (a) to 1 (c) show an example of a CC mask and a cc mask plating. Figure 1 (a) shows a side view of one of the cc masks 8 patterned on the anode 12-an adhesive or deformable (e.g. elastomer) insulator 10. The anode has two functions. Figure 1 (a) also depicts a substrate 6 separated from the mask 8. Because patterns can have topological complexity (such as isolated "islands" that include insulator materials), one function is to serve as a support material for patterned insulators to maintain their integrity and alignment. Another function is as the anode of the plating operation. The cc mask plating simply presses the insulator against the substrate and then electrodeposits the material through the openings 26a and 26b in the insulator so that the deposition material 22 is selectively and redundantly deposited on a substrate 6, as described in Section 1 (b). After deposition, as shown in FIG. I (c), the CC mask is preferably separated from the substrate 6 in a non-destructive manner. cc mask plating process and "through-mask", the difference between the plating process is 20 200422250 in:-Through-mask process, the masking material and the substrate will be destructively separated As with the mask recording, the cc fresh plating selectively and simultaneously deposits the material over the entire thin layer. The plated area can be made up of "or multiple isolated areas, where these isolated areas The money cover area can belong to a single-structure that is formed or may belong to multiple structures that are formed at the same time. In the cc mask key cover, since individual masks are not deliberately destroyed during the removal process, they can still be used in multiple money cover operations. Figures 1 (d) to 1 (f) show another example of a cc mask and cc mask plating. Fig. 1 (d) shows an anode 12 ', and the anode 12 is separated from a mask 8 containing an attached adhesive material 10 and a supporting structure 20. (Command) The figure also depicts the substrate 6 separated from the mask 8 '. Fig. 1 (e) shows the mask 8 in contact with the substrate 6. Fig. 1 (f) shows that the anode 22 does not conduct a current to the deposit 22 'generated by the substrate $. Figure 1 (g) shows the sediment 22 'on the substrate stone separated from the mask 8. In this example, an appropriate electrolyte is positioned between the substrate 15 and the anode 12, and ionic electricity from one or both of the solution and the anode is conducted through the opening in the mask to the substrate for material deposition. material. This type of mask can be called an anodized INSTANT masktm (aim) or an anodized shell (CC) mask. + Same as the shell material cover, the CC mask cover can make the cc mask be completely separated from the manufacturing of the base material (for example, separated from the XC cover by the two-dimensional ⑽ structure formed by one). Masks can be shaped in a number of different ways. For example, a photolithography process can be used. All masks can be generated simultaneously before the structure is manufactured, rather than during manufacturing. This separation may result in a simple, & cost, automated, self-contained The interior is clean and can be installed at almost any 10 200422250 “desktop factory” wherever structures are made, so it leaves any ideal processes such as photolithography that can be performed by service authorities or units. Musician: 5 (C) Figure 10 15 20 Various components of Baoerjia armor system. System 32 is composed of several sub-systems 34,%, 38, and 40. The substrate holding sub-system 34 is depicted in the first section. 3⑷ to 3_'s upper part and packaged components ... ⑴-carrier 48, ⑺-metal substrate 6, which can be used for thin and thin products 'and ⑺-linear slider 42' which can respond to fine forces from actuation Move the substrate 6 up and down relative to Lai 48. Sub-system Ke ^-for the amount The indicator flutter of the difference in the vertical position of the substrate is measured, and "" is used to set or determine the thickness of the thin layer and / or the thickness. The sub-commands include the foot for the carrier # which can be precisely mounted on the sub-green 36. I = CC mask secondary system shown in the lower part% includes several components: J: Actually made—common support / Anode 12 "^" frame, on which the secondary system can be installed, which is used to accommodate electrolysis fl6. Sub-system 34 and ^) electrical connection (not shown in the figure) !! Appropriate power supply with pure m brackets. Wrongly connected to the d-piece of Xiao Yu's driving cc masking process: = System 38 shows: the lower part of Figure 3 (b) and includes _ " (2) an electrolyte tank 64, which is used to hold the electric shovel solution, named 66 ' And (3) the frame 74, the valley, and the internal plating system 38 also include the palpitation of the foot. The second show is used to drive the connection part (not shown) to connect the anode to the dynamic production process. The appropriate power supply.

11 200422250 平面化次系統40顯示於第3(c)圖下部且包括一用於將 沉積物平面化之研磨板52及相關聯的動作及控制系統（未 圖示）。 另一用於從經電鍍金屬（亦即使用電化學製造技術）形 5 成微結構之方法揭露於葛郭(Henry Guckel)名稱為“利用具 有可犧牲金屬薄層的多位準深X光微影術之微結構形成方 法”之美國專利案5，190,637號。此專利案揭露使用遮罩暴露 來形成金屬結構。第一薄層主要金屬係電鍍在一暴露的鍍 覆基底上以充填一光阻中的一空隙，然後移除光阻且將一 10 次級金屬電鍍在第一薄層上方及鍍覆基底上方。次級金屬 的暴露表面隨後機械加工降至一可暴露第一金屬之高度， 以產生一延伸橫越主要與次級金屬之平坦的均勻表面。然 後可藉由將一光阻層施加至第一薄層上方然後重覆用來產 生第一薄層之製程來形成一第二薄層。隨後重覆此製程， 15 直到整體結構形成且藉由蝕刻來移除次級金屬為止。光阻 藉由鑄造形成於鍍覆基底或先前的薄層上方，且利用X光或 UV輻射經過一經圖案化遮罩之光阻暴光來形成光阻中的 空隙。 可使用電化學製造利用可電沉積性材料來形成具有複 20 雜形狀的結構，但仍需要一種可靠、合乎成本效益且可改 善地封裝此等物件之方式。 【發明内容】 發明概要 本發明各種型態之一目的係提供改良的用於關鍵結構 12 之封裝方法。 本發明各種型態之另一目的係提供用於同時製造結構 及其封裝體之方法。 本發明各種型態之另一目的係提供氣密性密封之微結 構。 1011 200422250 The planarization sub-system 40 is shown in the lower part of Fig. 3 (c) and includes a grinding plate 52 for planarizing the deposit and an associated action and control system (not shown). Another method for forming microstructures from electroplated metal (that is, using electrochemical manufacturing techniques) was disclosed in Henry Guckel under the name "Using multiple quasi-deep X-ray microstructures with a thin layer of sacrificial metal US Pat. No. 5,190,637. " This patent discloses the use of mask exposures to form metal structures. The first thin layer of primary metal is electroplated on an exposed plated substrate to fill a void in a photoresist, and then the photoresist is removed and a 10 secondary metal is plated over the first thin layer and over the plated substrate. . The exposed surface of the secondary metal is then machined to a level where the first metal can be exposed to produce a flat, uniform surface that extends across the primary and secondary metals. A second thin layer can then be formed by applying a photoresist layer over the first thin layer and then repeating the process used to produce the first thin layer. This process is then repeated until the overall structure is formed and the secondary metal is removed by etching. Photoresist The cavity in the photoresist is formed by casting on a plated substrate or a previous thin layer, and using X-ray or UV radiation through a patterned photoresist exposure. Electrochemically-manufacturable materials can be used to form structures with heterogeneous shapes using electrochemical manufacturing, but a reliable, cost-effective, and improved way to package such objects is still needed. SUMMARY OF THE INVENTION One of the various aspects of the present invention is to provide an improved packaging method for key structures 12. Another object of various aspects of the present invention is to provide a method for manufacturing a structure and a package thereof simultaneously. Another object of the various forms of the present invention is to provide a hermetically sealed microstructure. 10

熟習該技術者可藉由本文原理來得知本發明各種型態 之其他目的及優點。本文所明示或由本文原理獲知之本發 月的各種型態可能解決上述目的之單獨任—者或多者，或 =可成並未解決上述任意目的而是解決了從本文獲知之部 刀其他目的。即使對於部分型態可成立，並無意藉由本發 明的任何單-型態來解決所有這些目的。 ' 令货听的弟一型態中 —心τ，一用於曰要^固系占w的溥膺^ 15 :、准結構之電化學製造方法係包括：（A)將-薄層的至: k儿積在基材上，其巾基材可包含先前沉積的材料 ()^成數個層，以使得各連續薄層形成為鄰近於且肩Those skilled in the art can understand the other purposes and advantages of various forms of the present invention through the principles of this document. The various types of this month that are explicitly stated or learned from the principles of this article may solve the above-mentioned purposes alone or in one or more, or = can not solve any of the above purposes but solve the Ministry of Knowledge learned from this purpose. Even if some forms can be established, it is not intended to solve all these purposes by any single-form of the present invention. 'Let's listen to the younger one in the form-heart τ, one used to say ^ solid system accounts for 溥 膺 ^ 15 :, quasi-structured electrochemical manufacturing method includes: (A) will-thin layer of : K is accumulated on the substrate, and the towel substrate may include the previously deposited material () ^ into several layers so that each continuous thin layer is formed adjacent to and shoulders

薄層;其中薄層包含至少三種不同㈣ 曰:、冑包含下列材料之圖案：⑴-所需要的㈣ 、、且件其X到保護且由至少_結構性材料形成Thin layer; where the thin layer contains at least three different ㈣ :, 胄 contains a pattern of the following materials: ⑴-the required ㈣, and its X to protection and formed of at least _ structural materials

2圍件’其至少部份地由—結構性材料形成^ 件的至少一邱八及r， N r ^ 。刀糸至〉、部份地圍繞所需要的結構性組4 且其中包圍件受到复由P , 1 料，其定叫衫師開口賴制；（3)—密* 其定位成為至;Γ二：少—開口;及(4)-可犧幽 件與包圍相ίΓ於受雜護之㈣要的結撕 夕—部分之間；其中在薄層形成之後 13 200422250 除了定位在所需要的結構性組件與包圍件的至少一部分之 間之至少部分的可犧牲材料；及其中在可犧牲材料移除之 後，使密封材料暫時地流動並密封住至少一開口以阻絕或 顯著地限制一從包圍件外側經由至少一經密封的開口至包 5 圍件内側之材料通道。 本發明的第二型態中，一用於從數個黏附薄層產生三 維結構之電化學製造方法係包括：（A)將一薄層的至少一部 分沉積在一基材上，其中基材可包含先前沉積的材料；及 (B)形成數個薄層，使得各連續薄層形成為鄰近且黏附至一 10 先前沉積的薄層；其中薄層包含至少兩種不同材料且其中 薄層具有包含下列材料之圖案：（1)一所需要的結構性組 件，其受到保護且由至少一結構性材料形成；（2) —保護性 包圍件，其至少部份地由一結構性材料形成，其中包圍件 的至少一部分係至少部份地圍繞所需要的結構性組件，且 15 其中包圍件受到其中至少一開口所限制；（3)—可犧牲材 料，其定位成為至少部份地位於受到保護之所需要的結構 性組件與包圍件的至少一部分之間；其中在薄層形成之 後，移除了定位在所需要的結構性組件與包圍件的至少一 部分之間之至少部分的可犧牲材料；及其中在可犧牲材料 20 移除之後，將一密封件形成於保護性包圍件與一密封結構 之間，其中至少一保護性包圍件或密封結構包含一可用以 建立至少一開口的密封之密封材料以阻絕或顯著地限制一 從包圍件外側經由至少一經密封的開口至包圍件内側之材 料通道。 14 200422250 本發明的第三型態中，一用於從數個黏附的薄層產生 三維結構之電化學製造方法係包括：（A)將一薄層的至少一 部分沉積在一基材上，其中基材可包含先前沉積的材料； 及(B)形成數個薄層，使得各連續薄層形成為鄰近於且黏附 5 至一先前沉積的薄層；其中薄層包含至少兩種不同材料且 其中薄層具有包含下列材料之圖案：（1)一所需要的結構性 組件，其受到保護且由至少一結構性材料形成；（2)—保護 性包圍件，其至少部份地由一結構性材料形成，其中包圍 件的至少一部分係至少部份地圍繞所需要的結構性組件， 10 且其中包圍件受到其中至少一開口所限制；（3)至少一阻絕 結構，其沿著一視線定位並包括至少一開口但與保護性包 圍件分隔；及(4)一可犧牲材料，其定位成為至少部份地位 於受到保護之所需要的結構性組件與包圍件的至少一部分 之間；（5)其中在薄層形成之後，移除了定位在所需要的結 15 構性組件與包圍件的至少一部分之間之至少部分的可犧牲 材料；及(6)其中在可犧牲材料移除之後，沉積一密封材料 使其打擊該阻絕材料藉以抑制密封材料大量地進入包圍 件，其中藉由持續積造密封材料來密封住至少一開口以阻 絕或顯著地限制從包圍件外側經由至少一經密封的開口至 20 包圍件内側之一材料通道。 本發明的第四型態中，一用於從數個黏附的薄層產生 三維結構之電化學製造方法係包括：（A)將一薄層的至少一 部分沉積在一基材上，其中基材可包含先前沉積的材料； 及(B)形成數個薄層，使得各連續薄層形成為鄰近於且黏附 15 200422250 至一先Sil沉積的薄層；其中薄層包含至少兩種不同材料且 其中薄層具有包含下列材料之圖案：（1)一所需要的結構性 組件，其受到保護且由至少一結構性材料形成；（2)一保護 性包圍件，其至少部份地由一結構性材料形成，其中包圍 5件的至少一部分係至少部份地圍繞所需要的結構性組件， 且其中包圍件受到其中至少一開口所限制；（3)一可犧牲材 料，其定位成為至少部份地位於受到保護之所需要的結構 性組件與包圍件的至少一部分之間。 熟習該技術者可由本文原理得知本發明的第四型態。 10本發明的其他型態可包含合併本發明的上述型態及/或添 加一或多項實施例的各種特性。本發明的其他型態可包含 可用以實行本發明的一或多種上述方法型態之裝置。本發 明的這些其他型態可提供上文提供的型態之各種不同組合 並&供上文未具體描述之其他組態、結構、功能性關係及 15 製程。 圖式簡單說明 第1(a)至l(c)圖示意性描繪一cc遮罩鍍覆製程之各種 階段的側視圖，而第丨㈠彡至丨匕)圖示意性描繪一使用一不同 型CC遮罩之CC遮罩鍍覆製程的各種階段之側視圖； 20 第2(a)至2(0圖示意性描繪一施加以形成一特定結構之 電化學製造方法的各種階段之側視圖，其中選擇性沉積一 可犧牲材料並且毯覆沉積一結構性材料； 第3(a)至3(c)圖示意性描繪可用以人工式實行第2(a)至 2(f)圖所描繪的電化學製造方法之各種範例次總成的側視 16 圖； 第4(a)至4⑴圖示意性描繪利用經黏附的遮罩鍍覆來形 成〆結構的第-薄層，其中第二材料的毯覆沉積係鋪覆於 第一材料的沉積位置與第一材料本身之間的開口上· 弟5(a)圖描緣第一群組實施例之基本步驟的方塊圖； 第5(b)圖以方塊圖形成提出第二群組實施例之基本步 驟； 第6(a)至6(c)圖描繪根據本發明一較佳實施例來製造 結構時之各種階段的側視圖； 第6(d)圖描繪分離然後鋪設之第6(b)圖的結構之上兩 層的俯視圖； 第7(a)及7(b)圖描繪第6(b)圖的密封層之替代性組態； 第8 (a)圖描繪第6 (b)圖的最後兩層之一種替代性組態 的側視圖，而第8(b)圖描繪首先彼此分離然後鋪設之替代性 結構之上兩層的俯視圖； 第9(a)至9(d)圖描繪顯示用於一包圍壁之一替代性開 口及密封組態的特性之側視圖及俯視圖； 第10(a)至10(i)圖描繪各種替代性開口及密封組態； 第11(a)至11(c)圖描繪各種替代性開口及密封組態； 第12(a)至12(c)圖描繪各種替代性開口及密封組態； 第13(a)及13(b)圖描繪一替代性開口及密封技術； 第14(a)及14(b)圖描繪一用於密封開口之替代性技術； 第15(a)至15(f)圖描繪用於封裝一結構之一替代性實施 例的各種階段之側視圖； 200422250 弟16(a)至16(e)圖描繪用於封農一結構之另一實施例 的各種階段之側視圖； 第17(a)及17(b)圖描繪用於移除可犧牲材料及用於密 封包裝體之一替代性組態相關聯之側視圖； 5 第i8(a)至18(b)圖描繪用於移除可犧牲材料及用於密 封包裝體之一替代性組態之側視圖； 第18(c)圖描繪對應於第18(a)圖的包圍件及蓋之側俯 視圖； 第18(d)圖描繪用於移除可犧牲材料及用於密封包裝體 參 10 之一替代性組態之側視圖。 I[實施方式3 較佳實施例之詳細說明 第1(a)至1(g)、2(a)至2(f)、及3(a)至3(c)圖顯示已知的 一種形式電化學製造之各種特性。其他電化學製造技術請 15 見上文引用的’630號專利案及以引用方式併入本文之各種 其他專利案及專利申請案中，其他電化學製造技術可從這 些公開案、專利案及申請案所述之各種途徑的組合所產 生、或者熟習該技術者可經由本文原理以其他方式得知或 確認。所有這些技術皆可與本發明各型態的各實施例合併 20以生成增進的實施例。仍可從本文明示的各實施例之組合 來獲得其他實施例。 第4(a)至4(i)圖顯示一多層製造方法中形成單層時之各 種階段，其中一第二金屬沉積在一第一金屬上及第一金屬 中的開口内，且其沉積物形成了該薄層的一部分。第4(a) 18 200422250 圖顯示一基材82的側視圖，其上可鑄造如第4(b)圖所示可圖 案化的光阻84。第4(c)圖中顯示經由光阻的固化、暴光及顯 影所產生之一光阻圖案。光阻84的圖案化係導致從光阻的 一表面86延伸經過光阻厚度前往基材82的表面88之開口或 5開孔92(a)至92(c)。第4(d)圖中，將一金屬94(譬如鎳）顯示為 已經電鍍至開口 92(a)至92(c)内。第4(e)圖中，已經自基材 移除（亦即化學性蝕刻）光阻以暴露出未覆有第一金屬94之 基材82區。第4(f)圖中，將一第二金屬96(譬如銀)顯示為已 經毯覆電鍍在基材82的整體暴露部分（其為導電性）上方及 1〇第一金屬94(其亦為導電性)上方。第4(g)圖描繪藉由將第一 及第二金屬平面化降至可暴露第一金屬且設定第一薄層厚 度的高度所產生之完成的第一薄層結構。第（h)圖顯示數次 重覆第4(b)至4(g)圖所示的處理步驟以形成一多層結構之 結果，其中各薄層由兩種材料所組成。對於大部份應用而 15言，如第4(i)圖所示移除這些材料的一者以產生一所需要的 3-D結構98(譬如組件或元件）。 本文所揭露之各種實施例、替代方式及技術可合併使 用採用不同圖案化遮罩及遮罩技術之電化學製造技術。譬 如’可使用貼附性接觸遮罩及遮罩操作，可使用鄰接遮罩 20及遮罩操作（亦即，即使未產生接觸仍使用藉由其緊鄰於基 材來至4部&地選擇性遮蔽_基材之遮罩之操作），可使用 非貼附性遮罩及遮罩技術(亦即，基於具有不顯著貼附性接 觸表面的遮罩之遮罩及操作），且可使用經黏附的遮罩及遮 罩操作(使用黏附至-基材之遮罩之遮罩及操作，在基材上 200422250 發生選擇性沉積或蝕刻而非只與其接觸）。 第5 (a)圖以方塊圖形式提出本發明的第一群組實施例 之基本步驟。方塊102係形成一群組包括下列各物之電化學 製造薄層：（1)受到保護之結構性組件；（2)—保護性包圍 5 件，其由一結構性材料形成但其中具有至少一開口；（3) — 密封材料，其定位成為靠近至少一開口；及(4)一可犧牲材 料，其定位成為至少部份地位於受保護結構與保護性包圍 件之間。所使用的電化學製造可能類似於第l(a)至1(c)圖及 第2(a)至2(f)圖所顯示者，或者其可能為，63〇號專利案所揭 10露之另一製程、根據其他先前引用的公開文件中之一製 程、下文引用的專利案及申請案所列出者中包括之專利案 或申請案所描述之一製程、或者此製程可能為這些公開文 件、專利案、申請案中所述的各種途徑之一組合或者可由 熟習該技術者所瞭解或確認。 15 I薄層形成之後’此製程前進至用來移除可犧牲材料 之方塊104。 接者’在方塊106,此製程係用來選擇性排空包圍 受保護結構之間的區。此製裎亦可包括以—所需要的充填 氣體來回填這些區。充填氣體譬如可“惰丨準如N2、Ar 20 件組合之部分特殊處理 最後，在方塊108， 開口02 Envelopes' which are at least partly made of a structural material ^ at least one Qi Ba and r, N r ^. Knife to>, partly surrounding the required structural group 4 and the surrounding parts are covered by P, 1 material, which will be called the shirt master to control; (3)-dense * its positioning becomes to; Γ 二: Less-opening; and (4)-between the sacrificial piece and the enveloping phase, the part of the knot that is protected by the miscellaneous protection; among them, after the thin layer is formed, 13 200422250 except for the required structurality At least a portion of the sacrificial material between the component and at least a portion of the enclosure; and wherein after the sacrificial material is removed, the sealing material temporarily flows and seals at least one opening to block or significantly restrict an exit from the enclosure Pass through at least one sealed opening to the material channel on the inside of the enclosure. In a second aspect of the present invention, an electrochemical manufacturing method for generating a three-dimensional structure from a plurality of adhesive thin layers includes: (A) depositing at least a portion of a thin layer on a substrate, wherein the substrate may be Including previously deposited materials; and (B) forming several thin layers such that each successive thin layer is formed adjacent to and adheres to a 10 previously deposited thin layer; wherein the thin layer comprises at least two different materials and wherein the thin layer has Patterns of the following materials: (1) a required structural component that is protected and formed from at least one structural material; (2) a protective enclosure that is formed at least partially from a structural material, where At least a portion of the enclosure is at least partially surrounding the required structural components, and 15 of which the enclosure is restricted by at least one of the openings; (3)-sacrificable material positioned to be located at least partially within the protected Between the required structural component and at least a portion of the enclosure; wherein after the thin layer is formed, the positioning between the required structural component and at least a portion of the enclosure is removed At least part of the sacrificial material; and after the sacrificial material 20 is removed, a seal is formed between the protective enclosure and a sealing structure, wherein at least one of the protective enclosure or seal structure includes a Establishing a sealed sealing material for at least one opening to block or significantly restrict a material passage from the outside of the enclosure through the at least one sealed opening to the inside of the enclosure. 14 200422250 In a third aspect of the present invention, an electrochemical manufacturing method for generating a three-dimensional structure from a plurality of adhered thin layers includes: (A) depositing at least a portion of a thin layer on a substrate, wherein The substrate may include previously deposited materials; and (B) forming a plurality of thin layers such that each successive thin layer is formed adjacent to and adheres to 5 to a previously deposited thin layer; wherein the thin layer comprises at least two different materials and wherein The sheet has a pattern comprising: (1) a required structural component that is protected and formed from at least one structural material; (2) a protective enclosure that is at least partially constructed from a structural Material, where at least a portion of the enclosure is at least partially surrounding the required structural component, 10 and where the enclosure is restricted by at least one of the openings; (3) at least one barrier structure, which is positioned along a line of sight and Includes at least one opening but is separated from the protective enclosure; and (4) a sacrificial material positioned to be located at least partially in at least the structural components and enclosures required for protection Between parts; (5) where after the thin layer is formed, at least a portion of the sacrificial material positioned between the desired structural component and at least a part of the enclosure is removed; and (6) where the After the sacrificial material is removed, a sealing material is deposited to strike the barrier material to prevent the sealing material from entering the enclosure in large quantities, wherein at least one opening is sealed by continuously building the sealing material to block or significantly restrict the outside of the enclosure Via at least one sealed opening to a material channel on the inside of the 20 enclosure. In a fourth aspect of the present invention, an electrochemical manufacturing method for generating a three-dimensional structure from a plurality of adhered thin layers includes: (A) depositing at least a portion of a thin layer on a substrate, wherein the substrate May include previously deposited materials; and (B) forming a plurality of thin layers such that each continuous thin layer is formed adjacent to and adheres to 15 200422250 to a thin layer deposited by first Sil; wherein the thin layer comprises at least two different materials and wherein The thin layer has a pattern comprising: (1) a required structural component that is protected and formed from at least one structural material; (2) a protective enclosure that is at least partially constructed from a structural Material formation, where at least a portion of the surrounding 5 pieces at least partially surrounds the required structural component, and wherein the surrounding piece is limited by at least one of the openings; (3) a sacrificial material, which is positioned at least partially Located between the structural components required for protection and at least a portion of the enclosure. Those skilled in the art can know the fourth form of the present invention from the principles of this article. 10 Other forms of the invention may include various features incorporating the above-mentioned forms of the invention and / or adding one or more embodiments. Other forms of the invention may include devices that can be used to carry out one or more of the above method forms of the invention. These other forms of the present invention can provide various combinations of the forms provided above and & other configurations, structures, functional relationships, and processes that are not specifically described above. The drawings briefly explain that Figs. 1 (a) to 1 (c) schematically depict side views of various stages of a cc mask plating process, and Figs. 丨 ㈠ 彡 to 丨) schematically depict one using one Side view of various stages of the CC mask plating process of different types of CC masks; Figures 2 (a) to 2 (0) schematically depict the various stages of an electrochemical manufacturing method applied to form a specific structure. A side view in which a sacrificial material is selectively deposited and a structural material is deposited over the blanket; Figures 3 (a) to 3 (c) schematically depict that 2 (a) to 2 (f) can be performed manually The side view 16 of various exemplary sub-assemblies of the electrochemical manufacturing method depicted in the figure; Figures 4 (a) to 4 schematically illustrate the formation of a first thin layer of a pseudostructure using an adhered mask plating, The blanket deposition of the second material is laid on the opening between the deposition position of the first material and the first material itself. Figure 5 (a) is a block diagram depicting the basic steps of the first group of embodiments; Figure 5 (b) is a block diagram showing the basic steps for proposing a second group of embodiments; Figures 6 (a) to 6 (c) depict a preferred embodiment according to the present invention. Side view of the various stages in the construction of the structure; Figure 6 (d) depicts the top view of the two layers above the structure of Figure 6 (b) separated and then laid; Figures 7 (a) and 7 (b) depict the sixth (b) Alternate configuration of the sealing layer of Fig. 8 (a) depicts a side view of an alternative configuration of the last two layers of Fig. 6 (b), and Fig. 8 (b) depicts each other first Top view of the two layers above the alternative structure separated and laid; Figures 9 (a) to 9 (d) depict side and top views showing the characteristics of an alternative opening and seal configuration for a surrounding wall; Figures 10 (a) to 10 (i) depict various alternative opening and sealing configurations; Figures 11 (a) to 11 (c) depict various alternative opening and sealing configurations; Figures 12 (a) to 12 (c) ) Figure depicts various alternative opening and sealing configurations; Figures 13 (a) and 13 (b) depict an alternative opening and sealing technique; Figures 14 (a) and 14 (b) depict an Alternative technologies; Figures 15 (a) to 15 (f) depict side views of various stages used to encapsulate an alternative embodiment of a structure; 200422250 Brother 16 (a) to 16 (e) depicts used to seal Another embodiment of an agricultural structure Figures 17 (a) and 17 (b) depict side views associated with an alternative configuration for removing sacrificial material and sealing the package; 5 Section i8 (a) Figures 18 through 18 (b) depict side views of an alternative configuration for removing sacrificial material and sealing the package; Figure 18 (c) depicts the enclosure and cover corresponding to Figure 18 (a) Side plan view; Figure 18 (d) depicts a side view of an alternative configuration for removing sacrificial material and for sealing the package body 10. I [Detailed description of the preferred embodiment of Embodiment 3 Figures 1 (a) to 1 (g), 2 (a) to 2 (f), and 3 (a) to 3 (c) show a known form Various characteristics of electrochemical manufacturing. For other electrochemical manufacturing technologies, please refer to the '630 patent case cited above and various other patent cases and patent applications incorporated herein by reference. Other electrochemical manufacturing techniques can be obtained from these publications, patent cases and applications. The combination of the various approaches described in the case, or those skilled in the art, can be known or confirmed in other ways via the principles herein. All of these techniques can be combined with various embodiments of the present invention 20 to produce enhanced embodiments. Other embodiments can still be obtained from the combination of the embodiments shown in this civilization. Figures 4 (a) to 4 (i) show various stages in forming a single layer in a multilayer manufacturing method, in which a second metal is deposited on a first metal and in an opening in the first metal, and its deposition Objects form part of the thin layer. Figure 4 (a) 18 200422250 shows a side view of a substrate 82 on which a photoresist 84 which can be patterned as shown in Figure 4 (b) can be cast. Figure 4 (c) shows a photoresist pattern produced by curing, exposure, and development of the photoresist. The patterning of the photoresist 84 results in openings or openings 92 (a) to 92 (c) extending from one surface 86 of the photoresist through the thickness of the photoresist to the surface 88 of the substrate 82. In Fig. 4 (d), a metal 94 (e.g., nickel) is shown as being plated into the openings 92 (a) to 92 (c). In Fig. 4 (e), the photoresist has been removed (i.e., chemically etched) from the substrate to expose the region 82 of the substrate that is not covered with the first metal 94. In FIG. 4 (f), a second metal 96 (for example, silver) is shown as being blanket-plated over the entire exposed portion of the substrate 82 (which is conductive) and the first metal 94 (which is also Conductivity). Figure 4 (g) depicts the completed first thin layer structure produced by planarizing the first and second metals to a height where the first metal can be exposed and the first thin layer thickness is set. Figure (h) shows the result of repeating the processing steps shown in Figures 4 (b) to 4 (g) several times to form a multilayer structure, where each thin layer is composed of two materials. For most applications, 15 words, remove one of these materials as shown in Figure 4 (i) to produce a desired 3-D structure 98 (such as a component or component). Various embodiments, alternatives, and techniques disclosed herein can be combined with electrochemical manufacturing techniques using different patterned masks and mask technologies. For example, 'Adhesive contact masks and mask operations can be used, abutment masks 20 and mask operations can be used (that is, even if no contact is made, use it to close to the substrate to 4 parts & select Masking_operation of masking of the substrate), non-adhesive masking and masking techniques (that is, masking and manipulation based on masks with non-significantly adhesive contact surfaces), and can be used Adhesive masks and mask operations (masks and operations using masks attached to a substrate, selective deposition or etching on the substrate 200422250 rather than just contacting it). Figure 5 (a) presents the basic steps of the first group of embodiments of the present invention in the form of a block diagram. Block 102 forms a group of electrochemically-manufactured thin layers comprising: (1) protected structural components; (2)-protective enclosure of 5 pieces formed of a structural material but having at least one of them Openings; (3) — sealing material positioned near at least one opening; and (4) sacrificial material positioned to be at least partially between the protected structure and the protective enclosure. The electrochemical fabrication used may be similar to that shown in Figures 1 (a) to 1 (c) and 2 (a) to 2 (f), or it may be disclosed in Patent No. 6330 Another process, a process based on one of the other previously cited public documents, a process described in a patent or application included in the patents and applications listed below, or this process may be public A combination of the various approaches described in documents, patents, and applications may be known or confirmed by those skilled in the art. After the 15 I thin layer is formed, the process proceeds to block 104 for removing sacrificial material. Accessor 'is at block 106. This process is used to selectively empty the area surrounding the protected structure. This process may also include filling these areas back and forth with the required filling gas. The filling gas, for example, can be specially treated as part of a combination of N2 and Ar20 pieces. Finally, at block 108, open 0

或類似物）或可能具化學活性諸如提供-還原環境（壁如 盼此製程亦可包括有效用來對於下項操作製備結構/㈣ 使密封材料暫時流動 並閉合至少_ 20 2o〇42225〇 第6⑷至賴提出施加至一特定結構之第5⑷圖的處 里〜程的各種階段之側視圖。第6⑷圖騎電化學製造且附 基材114之薄層112群組。薄層的群組包括⑴-結構 組件122,其受到賴且由—結構性材料形成；⑺一保護 性包圍件124 ’其由-結構性材料形成但其中具有多個開口 126’（3)一密封材料128，其定位成為靠近開口；及⑷一可 犧牲材料132，其充填於包圍件124内部134(亦即腔穴卜 第6(b)圖減可犧牲材料移除之後及密封材料流動、密 ίο 15 封與再固體化之前之基材1M、包圍件m、結構性組件m 及密封材料128。此實_巾，結齡組件變成在包圍件及 基材所界定的封裝體内受到保護。本實施例中，密封材料 較佳為-低融化溫度可電鍍金屬或銲料狀材料諸如姻㈣ 或錫師錯㈣。可犧牲材料可能為銅且結構性材料可能 為鎳，當然亦可接受採用其他適當材料。其要件在於可犧 牲材料的蝕刻不應損傷結構性組件122或顯著地損傷密封 材料128。 第6(d)圖描繪第6(b)圖的最上層之俯視圖。最左組件 H2是身為包圍件m的蓋之第二至最後層，且其由結構性 材料製成並包括開口 126。組件144係為結構的最後層並由 20 一密封材料128製成。其亦包括開口 126。組件144受到一虛 線的邊界線148圍繞且其顯示當兩組件對準時組件142的外 邊界。組件146顯示鋪覆有對準的開口 124之兩組件142及 144之俯視圖。 第7(a)及7(b)圖描繪第6(b)圖的密封層之替代性組態。 21 200422250 第7(a)圖中，密封材料包括用於橋接開口之單一掃桿152， 咸信此橋接部可能在密封材料流動（譬如藉由充分加熱）時 幫助開口的閉合。第7(b)圖類似於第7(a)圖，差異在於^繪 兩交叉的橋接部件154及156。 5 第8(a)圖描繪第6(b)圖的最後兩層之一替代性、组·能的 側視圖’而第8 (b)圖描繪包括替代性密封層之最後兩層的俯 視圖。第三至最後層I42尚未相對於第6(d)圖所示者改變其 組態，但最後層144,已經修改。如果不將最後層構成為一 如同第6⑷至6⑷圖案例般地設有孔之長方形板，在第8⑷ H)及8(b)圖中，各開口周圍的密封材料係為如第吵)圖清楚所 示之-環的形式，更狀言之，這些環具有比薄層142中的 孔126更小之内徑。咸信密封材料與薄層142中的孔以之部 份重疊將有助於當密封材料流動時使材料充填進入並_ 住開口。 山 15 20Or similar) or may be chemically active, such as providing-reducing the environment (this process can also include effective preparation of structures for the next operation / ㈣ make the sealing material temporarily flow and close at least _ 20 2o42225〇 6⑷ Zhi Lai proposed to apply a side view to the various stages of the process of Figure 5 to a specific structure. Figure 6 shows the group of thin layers 112 of electrochemical manufacturing and substrate 114. The group of thin layers includes ⑴ -A structural component 122, which is dependent and formed of-a structural material;-a protective enclosure 124 'which is formed of-a structural material but has a plurality of openings 126' (3) in it, a sealing material 128, which is positioned as Close to the opening; and a sacrificial material 132, which fills the interior 134 of the enclosing member 124 (ie, cavity 6 (b), minus the sacrificial material after removal and the sealing material flows, seals and resolidifies) 15 Before the substrate 1M, the enclosure m, the structural component m and the sealing material 128. In this case, the knotted component becomes protected within the package defined by the enclosure and the substrate. In this embodiment, the seal The material is preferably-low melting It can be electroplated metal or solder-like materials such as marriage or tinsmith. The sacrificable material may be copper and the structural material may be nickel. Of course, other suitable materials are acceptable. The key is that the etching of the sacrificial material should not Damage to the structural component 122 or significant damage to the sealing material 128. Figure 6 (d) depicts a top view of the uppermost layer of Figure 6 (b). The leftmost component H2 is the second to last layer of the cover that is the enclosure m. And it is made of a structural material and includes an opening 126. The component 144 is the last layer of the structure and is made of a sealing material 128. It also includes the opening 126. The component 144 is surrounded by a dashed border line 148 and its Shows the outer boundary of module 142 when the two modules are aligned. Module 146 shows a top view of two modules 142 and 144 covered with aligned openings 124. Figures 7 (a) and 7 (b) depict Figure 6 (b) Alternate configuration of the sealing layer. 21 200422250 In Figure 7 (a), the sealing material includes a single swivel 152 for bridging the opening. It is believed that this bridging part may be under the flow of the sealing material (such as by sufficient heating) Helps to close the opening. Figure 7 (b) Similar to Fig. 7 (a), the difference is that ^ draws two crossing bridge parts 154 and 156. 5 Fig. 8 (a) depicts one of the last two layers of Fig. 6 (b), an alternative, functional side View 'and Figure 8 (b) depicts a top view of the last two layers including an alternative sealing layer. The third to last layer I42 has not changed its configuration relative to that shown in Figure 6 (d), but the last layer 144, Has been modified. If the last layer is not configured as a rectangular plate with holes as in the example of patterns 6⑷ to 6⑷, the sealing material around each opening in Figures 8⑷ H) and 8 (b) is as The figure is clearly shown in the form of rings, more specifically, these rings have a smaller inner diameter than the holes 126 in the thin layer 142. The partial overlap of the Xianxin sealing material with the holes in the thin layer 142 will help fill the material and hold the opening as the sealing material flows. Mountains 15 20

弟⑻圖描、、會除了從身為一密封材料層162_上1 之第三至最後層皆由-結構性材料形成之—包圍件的: 圖。密封材料層在第9(b)圖以俯視圖顯示，其中可看出„ 料層之數個開口126，。密封材料流動時，咸信材料并 政及朋潰以將開π予以橋接及輯。密封層的崩潰可< 9⑷圖的側視圖看出。密封材料的分散及開口的閉合 2圖的純圖看出，其中虛線狀結構代表密封材料層 Γ广组態，而分散開來的材軸代表流動後的新⑷ ^性貫關巾’可將—壓力或力量施加至結構的上奇 幫助密封層的崩潰及密封材料的分散。 22 200422250 *丨:：)圖描繪—由—結構性材料製成 密封材料^口174之包圍件172的厚度(譬如1或更多薄層）。-〃 θ 178在目巾位於結構性材料層上方 5 :二具:_’但在部分實施例中其可更真正具有—種: 助可成㈣坡(或小梯階)可能在使密封材料流動時幫 口-動的密封材料來濕潤開口 174的表面，因此有 :?〇(\r(b)圖顯示使密封材料流動及讓其再固體: 第0(a)圖的開口產生的閉合。The younger brother, except for the third to the last layer, which is a sealing material layer 162_, is made of -structural material-the surroundings: The sealing material layer is shown in a top view in FIG. 9 (b), where several openings 126 of the material layer can be seen. When the sealing material flows, the letter material is rectified and broken to bridge and edit the opening π. The collapse of the sealing layer can be seen in the side view of Fig. 9. The dispersion of the sealing material and the closing of the opening can be seen in the pure image of Fig. 2. The dotted structure represents the wide configuration of the sealing material layer, and the dispersed material. The axis represents the new flow after the flow. ”Simultaneous clearance” can apply—pressure or force to the upper structure of the structure to help the collapse of the sealing layer and the dispersion of the sealing material. 22 200422250 * 丨: :) The thickness of the enclosing member 172 of the sealing material ^ mouth 174 (such as 1 or more thin layers). -178 θ 178 is located above the structured material layer of the mesh 5: Two: _ 'but in some embodiments It can more truly have the following: a kind of slope (or small step) may help the sealing material to move the sealing material to wet the surface of the opening 174 when the sealing material flows, so there is:? 〇 (\ r (b Figure) shows the sealing material flowing and resolidifying: the closure caused by the opening in Figure 0 (a).

^圓形本㈣梯階為具有漸進式改變魄 圖的，之另-替代方式，其中開口大:: 別但具有㈣的開^割，藉以增加開口尺相改善敍^ The circular step is a step-changing map, which is another alternative method, in which the opening is large :: do n’t have a cut in order to increase the opening size and improve the description.

:二：=Γ的移除但仍未形成大到難以使密 2橋臟之開σ。⑽)_於㈣攸10⑷ 二:有長方形孔而非圓形孔。雖然第，)圖將開口顯示 ^乎呈正方形’實際上，其可能為在長形開〇的各側上 量有斜坡之長形。如果為長形，經過梯階的槽可能增加數 帛1〇_顯示密封材料_對於包圍件結構172中 〇 一開nm之-種替代性組態。密封材料對稱性延伸超過包 圍件172中開口上部的各側邊緣。咸信此植態在一旦入材料 流動時將有助於使孔閉合。第10⑻圖描緣對於第^圖之 -替代性組態，其中令懸設的密封材料之1分顯著祕 伸超過開口的中點且較佳顯著地延伸於結構的下立 23 200422250 接壤開口的相對側所以當可流動材料被加熱時將可流動且 崩潰在開口遠側上藉此予以密封。第10(h)圖為對於第1〇⑴ 圖的組態之另-替代方式，其中結構性材料的形成方式可 使通過結構性材料之開口為非對稱性且如同第1〇_未定 5心於密封材料178中的開口上。第1〇⑴圖描繪另一替代方 式，其中懸設部分係包括附接的密封材料之-***部180。 咸信此材料***部將在一旦使密封材料流動時有效地用來 幫助開口之閉合。其他替代方式令，材料***部可延伸而 大體覆蓋住斜坡狀表面的整體右側。 第η⑷圖描緣五層的結構性材料18M85，1 :部分且設有—開口 186。將結構性 192。之蝴88。突部上_权數量的密刪 密封材料—二韻材料可流動’咸信突部188將有助於如 15 20: Two: = Γ removed but still not formed so large that it is difficult to make the dense 2 bridge dirty σ. ⑽) _Yu Yuyou 10⑷ 2: There are rectangular holes instead of circular holes. Although the figure (1) shows the opening to be almost square, in fact, it may be a long shape with a slope on each side of the long opening. If it is elongated, the number of grooves passing through the step may increase by 帛 1〇_showing sealing material_for the enclosure structure 172-an alternative configuration of nm. The sealing material extends symmetrically beyond the side edges of the upper portion of the opening in the enclosure 172. It is believed that this plant state will help to close the pores once the material flows. The drawing in Fig. 10 is an alternative configuration to Fig. ^, In which one point of the overhanging sealing material extends significantly beyond the midpoint of the opening and preferably significantly extends below the structure. 23 200422250 Bordering the opening The opposite side is therefore flowable and collapses on the distal side of the opening thereby sealing when the flowable material is heated. Figure 10 (h) is an alternative to the configuration of Figure 10⑴, in which the structural material is formed in such a way that the opening through the structural material is asymmetry and as in Figure 10_undetermined 5 On the opening in the sealing material 178. Fig. 10A depicts another alternative, in which the overhanging portion includes a raised portion 180 of an attached sealing material. It is believed that this material bulge will effectively help to close the opening once the sealing material has flowed. Other alternatives allow the material bulge to extend to substantially cover the entire right side of the sloped surface. Figure η⑷ depicts five layers of structural material 18M85, 1: partly and provided with-openings 186. Will be structural 192. Butterfly 88. The number of weights on the protrusion is closed. Sealing material—the two rhyme material can be flowed ’. The letter 188 will help such as 15 20

接觸 窄化區中的_並有助於—旦側之π產4Contact _ in the narrowed area and contribute to the production of π

觸則將密封材料固持在位置t B 中，在可犧飪知此貫轭例及其他實施命Touching will hold the sealing material in the position t B, and you can know this example and other implementations.

原性氣體二移:之後及使密封材料流動之前，則 其他活化製程來處理 表面的活切能有靜使㈣㈣件〜料別有用。 面。特定言之，， 。封材料弄濕結触材料的表 a發活化，由於性材料受到活化且從開口的-側 此流動的材饵在：月取罪近•處的侧將更高度地活化因 :移動，可能需要使得密封材料朝向表面_向於在該方 二果密封材料朝向包圍件内二公的相對側。因此， 則較高的活化程度可能朝向開斜則發活化， 、卜。卩範圍，且將鼓勵材 24 200422250 料流動以往右方向移動來密封住開口 離可==密封材料之—替代性組態。此替_ 力在内部***。此型實施例中 匕，猎由表面張 έ士接I 士 月匕不需要或不希望活化 ίο :紐材料的表面。第n⑷圖描%另_替代方式其中將 =材料的-***部設置於一與開口相鄰之囊部⑼内。咸 :與密封材料的較薄區196相鄰之此材料囊部可能在表面 張力驅動密封材料盡量降低其表面積時傾向於自該等較薄 £抽拉材料，故增加囊部的***^助密封住開口。 第12⑷至i 2(e)圖描繪對於不同可能開口組態的前後 版本之經沉積及魏的密珊料。這些組態中，結構性材 料具有編號202，沉積的密封材料具有編號綱，而流動的 密封材料具有編號204’。 15 第5(b)圖以方塊圖提出本發明的第二群組實施例之基 本步驟。此圖中，與第5(a)圖類似的部件具有類似的編號。 方塊102’形成一群組包括下列各物之經電化學製造薄層 受到保護之結構性組件；（2) —保護性包圍件，其由一結構 性材料形成但其中具有至少一開口 ；（3)—可犧牲材料，其 20定位成為至少部份地位於受保護結構與保護性包圍件之 間。方塊102,亦顯示出所形成的薄層亦可包括一定位為靠 近至少一開口之密封材料。 在薄層形成之後，此製程前進至用來移除可犧牲材料 之方塊104。可以任何方式進行此作用，其中可以選擇性移 25 200422250 除可犧牲材料而不損傷結構性材 蝕刻或融化）。 3错由選擇性化學 5 10 15 20 接著’在方塊106，此製程係用來 文保護結構之間的區。此製程亦可包括γ拆空包圍件與 氣體來回填這些區。充填氣體譬如二所需要的充填 或類似物）或可能具化學活性諸如提此共、、惰性（譬如％、Ar 私)。此製程亦可包括有效用來對於7 。還原環境（譬如 件組合之部分特殊處理。 、㊉操作製傷結構/包圍 接著，此製程往前移至方塊110， 其餘部分將—密封結構移動 -相對於包圍件的 密封村料。-般而言，社構k 密封結構可包括— 枯一 舞或所形成薄層的至少— —费封材料。密封結構或包圍件 者將包 ，括—黏劑。密封結構可能藉由平替代 ::仃運動。譬如可能藉由 '结構的推動、藉由空氣::組 =移除可犧牲材料時的崩潰、藉由逐層形成期間力、 ^力引發之運動、藉由造成—㈣或類㈣ 成''相對動作或類似作用’藉以發生運動。 〜 圍件ί後，在方塊108,上，使密封材料暫時流動同時將包 圍件及密封結構固持在一起。 •第13⑷及13(b)圖描繪根據第5(b)圖所示群組的一實施 4之範例。第13(a)圖描繪一位於壁214上方之蓋212。壁在 頂上覆有密封材料216。任何可犧牲材料（未圖示）移除之 ，將蓋往下帶入位置内且使密封材料216流動（譬如藉由 加熱此蓋）。密封材料受到壓縮並在蓋與壁之間形成密封。 26 200422250 盍212可纟t化學製造方法構成或可由部分其他方式構 成。蓋可能是與包圍件其餘部分不同之一材料。蓋可能是 -介電質或甚至-透明材料。 心貝^例中’就像第13(a)及13(b)圖所示者，包圍件 的土與、、、口構共同製造但蓋則否。壁中可能具有或不具有蝕 麻。所形成結構的最後層可施加有-可能受到平面化或 =平面化之被封劑（譬如部分類型的銲料)。在钱刻以釋放 I相中的^構之後’將分離製造的蓋（譬如特定種類的一金 屬片）放置在體形上方。可以晶圓尺度或在個別元件上達成 馨 1〇此作用。使銲料(或其他材料)流動並密封住元件。此途徑提 [數員U · (1)S件或結構可在密封前易於以視覺檢查； ()可在後封别進行額外加工（譬如金屬化、純化、測試等）； (3)釋放姓刻將較少發生問題；⑷可盡量減少施加或平面化 可流動式材料之問題；（5)因為可利用一大致未圖案化的片 15來消除一或多細FAB製造薄《，故可能更為便宜；⑹蓋可 由一不易電沉積的材料製成；及(7)由於能夠將蓋與壁表面 壓抵在一起，所以利用銲料來濕潤壁表面及蓋表面將變得 · 較不重要。 邛刀替代性貫^例中，銲料（或其他可流動的密封材料） · 20可沉積在蓋上而非壁上。 . 對於上述實施例可能具有許多替代方式，熟習該技術 者可瞭解許多額外實施例。可使用多種結構性材料。可使 用多種類型的可流動材料。結構性組件及包圍件可由不同 材料甚至多種材料形成。可能對於密封使用一或多種可流 27 2〇〇42225〇 η材料且可使用其他材料造成結構相對於彼此位移因而 I能在任何可齡材料錄之㈣助結制自動密封。可 :互連件供給㈣包圍件或基材，故可對於包圍件内部建 立電性連接。蓋結構或基材可能具有被透明窗口所覆蓋之 5開口，所以光學組件可嵌入包圍件内且光學訊號可傳輸出 入包圍件。基材可包括—經傳導性塗覆的透明結構(譬如玻 璃）其中可連同可犧牲材料的移除將塗層移除或可在可犧 牲材料移除之後加以移除。或者，可將一充分傳導性及光Primary gas second shift: after and before the sealing material is allowed to flow, other activation processes can be used to treat the surface. The cutting of the surface can make the piece ~ useful. surface. In particular,. The sealing material wets the surface of the contact material and is activated. Because the sexual material is activated and the material bait flowing from the side of the opening is: The side near the moon will be more highly activated. Cause: Movement may require The sealing material is oriented toward the surface—to the opposite side of the two male sealing materials facing the two males in the enclosure. Therefore, a higher degree of activation may be activated towards Kaixie.卩 range, and will encourage material flow in the past to move the right direction to seal the opening Li Ke == sealing material-alternative configuration. This replacement _ force bulges internally. In this type of embodiment, the dagger is hunted by the surface, and the dagger is not required or desired to be activated. The surface of the button material. The nth figure depicts another alternative, in which the-bulging portion of the material is disposed in a capsule portion adjacent to the opening. Salt: The bladder of this material adjacent to the thinner area 196 of the sealing material may tend to pull from the thinner when the surface tension drives the sealing material to minimize its surface area, so increasing the bulge of the bladder ^ helps seal Hold your mouth. Figures 12 (a) to 2 (e) depict the deposited and Wei Mishan materials for the previous and subsequent versions of the different possible opening configurations. In these configurations, the structural material is numbered 202, the deposited sealant is numbered, and the flowing sealant is numbered 204 '. 15 Figure 5 (b) presents the basic steps of a second group of embodiments of the present invention as a block diagram. In this figure, parts similar to those in Figure 5 (a) have similar numbers. Block 102 'forms a group of electrochemically-manufactured thin-layer protected structural components including: (2) a protective enclosure formed of a structural material but having at least one opening therein; (3) )-Sacrificeable material 20 positioned at least partially between the protected structure and the protective enclosure. Block 102 also shows that the formed thin layer may also include a sealing material positioned near at least one opening. After the thin layer is formed, the process proceeds to block 104, which is used to remove the sacrificial material. This effect can be performed in any way, where it can be selectively shifted (except for materials that can be sacrificed without damaging the structural material (etching or melting)). 3 faults are caused by selective chemistry 5 10 15 20 and then at block 106, this process is used to protect the regions between structures. This process can also include emptying the enclosure and filling the areas back and forth with gas. The filling gas (such as the two required fillings or the like) or may be chemically active such as the co-, inert (for example,%, Ar). This process can also include effective use for 7. Reduction of the environment (eg, special treatment of parts of the assembly. ㊉, operation to damage the structure / surrounding.) Next, the process moves forward to block 110, and the rest will-move the sealing structure-relative to the sealing material of the surrounding parts.-General In other words, the sealing structure of the social structure k may include-at least one or a thin layer formed-sealing materials. Sealing structures or enclosures will include-adhesives. Sealing structures may be replaced by flat ::: 仃For example, it may be driven by the structure, by the air :: group = collapse when the sacrificial material is removed, by the force during the layer-by-layer formation, the force-induced movement, by the -㈣ or the like '' Relative action or similar action 'to move. ~ After the enclosing element, on block 108, make the sealing material flow temporarily while holding the enclosing element and sealing structure together. • Figures 13 and 13 (b) depict An example of an implementation 4 according to the group shown in Figure 5 (b). Figure 13 (a) depicts a cover 212 above the wall 214. The wall is topped with a sealing material 216. Any sacrificial material (not shown) (Shown) remove it and bring the cover down The sealing material 216 flows inside (for example, by heating the cover). The sealing material is compressed and forms a seal between the cover and the wall. 26 200422250 盍 212 may be constructed by chemical manufacturing methods or may be constructed by some other means. The cover may be It is a material different from the rest of the enclosure. The cover may be a -dielectric or even a transparent material. In the case of the shell, 'as shown in Figures 13 (a) and 13 (b), the enclosure's The soil is co-manufactured with, but the mouth structure is not. The wall may or may not have etched hemp. The final layer of the structure formed may be applied with a sealant that may be planarized or = planarized (such as some types) Solder). After the money is engraved to release the structure in Phase I, a separately manufactured cover (such as a specific type of metal sheet) is placed above the shape. This can be achieved at wafer scale or on individual components. Role. Make solder (or other materials) flow and seal the component. This approach provides [numerical U · (1) S pieces or structures can be easily visually inspected before sealing; () additional processing can be performed after sealing ( (Such as metallization, purification, testing, etc.) (3) Release of nicknames will cause fewer problems; (1) Minimize the problem of applying or planarizing flowable materials; (5) Because a substantially unpatterned sheet (15) can be used to eliminate one or more fine FAB manufacturing thin <<, so it may be cheaper; the lid can be made of a material that is not easily electrodeposited; and (7) Since the lid can be pressed against the wall surface, using the solder to wet the wall surface and the lid surface will become · Less important. In the alternative implementation of the trowel, solder (or other flowable sealing material) 20 can be deposited on the cover instead of the wall.. There may be many alternatives to the above-mentioned embodiments, and those skilled in the art Many additional embodiments can be understood. A variety of structural materials can be used. A variety of types of flowable materials can be used. Structural components and enclosures can be formed from different materials or even multiple materials. It may be possible to use one or more flowable materials for sealing and other materials may be used to cause the structure to move relative to each other so that automatic sealing can be achieved in any ageable material. Available: The interconnect provides the enclosure or substrate, so electrical connections can be established inside the enclosure. The cover structure or substrate may have 5 openings covered by a transparent window, so that the optical components can be embedded in the enclosure and the optical signals can be transmitted in and out of the enclosure. The substrate may include—a conductively coated transparent structure (such as glass) in which the coating may be removed with the removal of the sacrificial material or may be removed after the sacrificial material is removed. Alternatively, a fully conductive and light

學透射性塗層施加至-透明基材，諸如玻璃、石英及類似 10 物。 可能使用各種技術來改善及補充上述的製程。 可使用IR迴流使得加熱更均勻並盡量減少受保護結構 (譬如元件)及基材的發^在此製程中，將—比基材妓的 IR供源放置成為平行於銲料層且呈現_段固定距離。基材 !5可垂直於薄層平面而相對平移（亦即沿著2轴線)使其緊^irChemically transmissive coatings are applied to transparent substrates such as glass, quartz, and the like. Various techniques may be used to improve and complement the processes described above. IR reflow can be used to make the heating more uniform and minimize the development of protected structures (such as components) and substrates. In this process, the IR source of the substrate is placed parallel to the solder layer and appears to be fixed. distance. The substrate! 5 can be relatively translated perpendicular to the plane of the thin layer (that is, along the 2 axis) to make it tight ^ ir

供源或可在一傳送器上移動超過供源或可在加熱之前固定 在位置中。 一替代性加熱途徑係包含使用一熱板。此途徑中，令 與銲料接觸之結構性材料的蓋或銲料層實際接觸到1 20板。板可鉍過處理以改善銲料的濕潤。板可藉由沿著2軸線 的平移而產生接觸，且可藉由側向平移予以移除。在一更 極端案例中，板可攜帶銲料且封裝層不必鍍有銲料。一對 於使用熱板之替代性方式中，可能使具有開口的薄層與、像 融密封材料（譬如已經融化的銲料)產生接觸，此熔融密封材 28 200422250 5 料當移動離開時將濕潤且黏至表面並將密封住開口。 可使用各種表面處理來Μ密封㈣（或銲料清㈣ 構性材料的漏。可使用化學處理，諸如贿劑、樹脂、 表面活化劑。亦可能使用電化學及電漿處理。亦可能將表 面處理化學物添加至用來移除可犧牲材料钱刻劑。、 10 可利用還原製程來還原會阻礙密封材料流之氧化物 層，藉此改善測仙一實行_巾，在密封材料流動 之前，提供-還原大氣(譬如氫）。密封材料保持在其融點以 下直到氧化物層完全還原為止。還原大氣隨後可由—惰性 氣體（譬如Ν2)取代。惰性氣體隨後可排空以生成一排空空間 或其可被留置。當包圍件保持排空或充填—所需要S體 時’溫度可能增加至迴流溫度或高於m度之所需要溫The source may be moved over a source on a conveyor or may be fixed in position before heating. An alternative heating route involves the use of a hot plate. In this approach, the cover or solder layer of the structural material in contact with the solder actually contacts the 120 board. The board can be treated with bismuth to improve solder wetting. The plate can be brought into contact by translation along the 2 axis and can be removed by lateral translation. In a more extreme case, the board can carry solder and the encapsulation layer need not be solder-plated. As an alternative to using a hot plate, a thin layer with an opening may be brought into contact with, for example, a molten sealing material (such as melted solder). This molten sealing material 28 200422250 5 will be wet and sticky when moved away To the surface and seal the opening. Various surface treatments can be used to seal the leaks of the structural materials (or solders). Chemical treatments such as bribes, resins, surfactants can be used. Electrochemical and plasma treatments can also be used. Surface treatments can also be used Chemicals are added to remove the sacrificial material. 10, The reduction process can be used to reduce the oxide layer that will hinder the flow of the sealing material, thereby improving the implementation of the tester. Before the sealing material flows, provide- Reducing atmosphere (such as hydrogen). The sealing material remains below its melting point until the oxide layer is completely reduced. The reducing atmosphere can then be replaced by an inert gas (such as N2). The inert gas can then be evacuated to create an empty space or Can be left in. When the enclosure remains empty or filled-when the S body is needed, the temperature may increase to the reflow temperature or higher than the required temperature of m degrees

度使得密封材料的流動導致密封，其後溫度可降低以使熔 融密封材料產生固體化。 15 部分實施例中，可利用芯吸結構來幫助密封材料流。 理想上，開口應設定尺寸及位置來對於蝕刻劑流提供最大 面積，但對於密封材料的濕潤提供最小的挑戰。圓形開口 可能並非最佳且長窄開口（槽）或星形可能更好，但可能仍存 在其他替代方式。可藉由添加濕潤結構而使圓形開口更可 20能阻塞（亦即密封）。一簡單的濕潤結構係為一條如第7(a)圖 所示將開口分成兩份之線。此線可能是結構性材料或密封 材料之一者或是兩者（譬如彼此相鄰）。此線可能拱起至薄層 平面外或另為一非線性形狀（譬如彎曲狀或變動尺寸）。一更 複雜的濕潤結構可能具有由一或多組線（譬如兩組用於分The temperature is such that the flow of the sealing material results in a seal, after which the temperature can be reduced to solidify the molten sealing material. In some embodiments, a wicking structure may be used to help seal the material flow. Ideally, the openings should be sized and positioned to provide the largest area for the etchant flow, but provide the least challenge to the wetting of the sealing material. Circular openings may not be optimal and long narrow openings (slots) or star shapes may be better, but other alternatives may still exist. The circular opening can be blocked (ie, sealed) by adding a wet structure. A simple wet structure is a line that divides the opening into two as shown in Figure 7 (a). This line may be one or both of structural material or sealing material (for example, next to each other). This line may bulge out of the plane of the thin layer or have another non-linear shape (such as a curved shape or variable dimensions). A more complex wet structure may have one or more sets of lines (such as two

29 200422250 成兩份之線)連接之一或更多個同心環。 其他實施例中，特定言之，如果此沉積主要為一直線 ’儿積I程且如果孔底下設有一可作為沉積阻止部及可自其 積造沉積物以密封住開口的積造點之結構性部件，則可能 5進行一沉積來充填孔。以第14(a)及14(b)圖作為辅助來顯示 此作用。第14(a)圖描繪一封裝結構302的一壁或蓋，且其下 存在一被密封的組件（未圖示）。壁或蓋包含開口 3〇4，且其 下存在阻絕部件306。位於壁或蓋302下之任何可犧牲材料 皆經由開口 304至少部份地移除。移除之後，封裝體可能充 10填有-所需要的氣體或其他材料或者可能保持排空。可使 用-顯著地或至少大體地直線的線沉積製程(學如經由 PVD)來將充分材料沉積至孔内，以使孔變成㈣。此密封 經由材料扇的沉積顯示於第14_。第14_中將材 料3〇8的沉積顯示為選擇性施加。其他替代方式中材料可 15能以毯覆方式沉積。 其他實施例中’為了增強—銲料型密封器的氣密型密 封’可能在密封開口上方進彳卜PVD或其他沉積操作以沉 積一種傾向於具有更氣紐質&lt;㈣(譬如金屬或玻璃）。其 他實施例中，可能在經銲料密封的開口上方進行一電沉積 操作，以增強密封。其他實施例中，經密封的封裝體可包 括一去疲(getter)材料。 以第15⑻至咖圖作為輔助來說明另―實施例。第 ⑷圖中’已經以頂層居先的方式將—元件424(馨如此處 顯示的電容器）製造在-施加至—暫時基材術之金屬釋放 30 200422250 、/. 中，附接最後基材之 則 部份輸刻可難㈣㈣。因為辑整體及 件可能隨後從其預定位置產生移位，此時可 成餘 5 10 刻但較佳尚未完全釋放封裝體内的元件。為了具有延^ 餘刻’如果部件原本(譬如由於其較短的高度)將變成未錯 固，几件的各獨立部件可能設有一往上延伸之趣固段(此範 Ο中並未® 或需要)使其在此初始_㈣嵌入可犧牲 材料内。在其中結構原本接合至側壁之實施例中完全的 蝕刻可能是可接受的。29 200422250 A bipartite line) connects one or more concentric rings. In other embodiments, specifically, if the deposition is mainly a straight line, and if the bottom is provided with a structure that can be used as a deposition prevention part and a deposition point that can be used to build up sediment to seal the opening, For parts, it is possible to perform a deposition to fill the holes. This effect is shown with the aid of Figures 14 (a) and 14 (b). Figure 14 (a) depicts a wall or cover of a packaging structure 302 with a sealed component (not shown) underneath. The wall or cover contains an opening 304, and there is a blocking member 306 below it. Any sacrificial material under the wall or cover 302 is at least partially removed through the opening 304. After removal, the package may be filled with the required gas or other material or may remain empty. A significant or at least substantially straight line deposition process (e.g., via PVD) can be used to deposit sufficient material into the hole to make the hole into a radon. The deposition of this seal via a material fan is shown at 14_. The deposition of material 308 is shown as selective application in Section 14_. In other alternatives, the material can be deposited as a blanket. In other embodiments, 'for reinforcement—hermetic seal of the solder-type sealer', a PVD or other deposition operation may be performed over the seal opening to deposit a type that tends to have a more gas-tightness &lt; ㈣ (such as metal or glass) . In other embodiments, an electrodeposition operation may be performed over the solder-sealed opening to enhance the seal. In other embodiments, the sealed package may include a getter material. The other embodiment will be described with the assistance of the 15th to the coffee chart. In the second figure, 'the component 424 (capacitor as shown here) has been manufactured in a top-first manner in-applied to-the temporary release of the metal substrate 30 200422250, /. Attach the final substrate Part of the loss can be difficult. Because the assembly and the component may subsequently be displaced from its predetermined position, it may be 5-10 minutes at this time, but preferably the component in the package has not yet been completely released. In order to have a delay ^ if the original part (for example due to its short height) will become unsecured, each individual part of several pieces may be provided with an interesting solid section extending upwards (these are not ® or Needed) to be embedded in the sacrificial material at this initial stage. A complete etch may be acceptable in embodiments where the structure was originally bonded to the sidewall.

第15⑷圖巾，結構已姉附至—塗覆有—黏附層物 之最後基材432(除非基材由—本身_至結構性材料之熱 塑性或其他材料製成）。黏劑較佳屬於—種可達成氣密性或 接近氣密性韻之麵，且較佳對於結構性材料具有良好 的黏附。 15 第15⑷圖中，將釋放層顯示為已經移除（譬如如果為一Figure 15: The structure has been attached to—coated with—the final substrate 432 of the adhesive layer (unless the substrate is made of thermoplastic or other materials—to the structural material itself). The adhesive preferably belongs to a surface that can achieve airtightness or close to the airtightness rhyme, and preferably has good adhesion to structural materials. 15 Figure 15 shows the release layer as removed (for example, if a

鲜料則藉由融化)且暫時基材已經移除(視需要，釋放層的任 何殘留物可由蝕刻、研磨、拋光等加以移除）。第15(^0圖中， 已經經由封裝體中的孔來蝕刻剩餘的可犧牲材料。第 圖中，銲料(通常比釋放層所用的銲料具有更高融點）融化以 2〇密封住元件（此步驟通常在-充填有所需要的氣體之加熱 的室内或一真空室内進行）。 另，實施例顯示於第16⑷至16⑷圖。此實施例中，結 構的個別隔離部件（組件、元件等）係錨固至其他部件及封裝 體的内側表面，以完全地蝕刻可犧牲材料同時使隔離的部 31 200422250 件保持其位置。只需要由銲料45〇來密封單一小孔446(部分 替代性方式中，可供應多個孔），且如果封裝體内部可為處 於大氣壓力的空氣(VS.譬如一惰性氣體或真空）或如果可在 一具有所需要氣體或真空的環境中達成將結構424及包圍 5件462附接至最後基材480的操作，則不需要此孔及相鄰的 鮮料。孔及銲料剩餘的唯一目的係為在“基材交換，，完成之 後生成封裝體的内部大氣。第16(a)圖中，已經以頂層居先 的方式將一兀件424製造在一施加至一暫時基材444之金屬 釋放層474(譬如低融點銲料）上。高融點銲料的高尺寸比 · 10 “柱”456(事實上’亦可使用一低融點銲料，此例中在導往第 16(d)圖所示狀態之步驟期間以·在一如帛16⑷圖完成之分 離的操作期間，柱將會脫離）。第16叫圖中，最後基材伽 附接之前，已經完全地蝕刻可犧牲材料468。第16(c)圖中， 結構已經黏附至-塗覆有一黏附層486之最後基材。第16(句 I5圖中，將釋放層474顯示為被移除或另使其釋放其在暫時基 材444上的抓握作用，且將暫時基材顯示為被移除。第i6(e) 圖中，較高融點的銲料456融化以密封住元件且因為融化時 φ 變得不穩定使柱由於高尺寸比（長度/直徑）而“鼓起_ up)” 。 · 20 另一群組的實施例對於包圍件提供了可移式附接的冑 . 封結構(譬如蓋）。這些實施例中，密封結構起初定位為可進 行姓刻且隨後移動或掉落至密封位置内。藉由將密封結構 附接至包圍件，可在敍刻期間使蓋保持附接至包圍件且可 能隨後以增強的對準加以定位。部分實施例中，附接部件 32 200422250 ίο 15 20 可月b由或多個對準部件加中，可使用一或夕加 邛刀的硯些實施例中㈣ 〇個附接部件及/或對準部件。部分實施例 社可將⑽轉部件及/或對準料定位在㈣件及/或穷 、、”。構的周邊上1分替代性實施例中，可將其 \ 圍件或密封結構的料畴。 、立至匕 ^實施例巾，密封結構㈣於㈣件之運動可能造 件血、以 件進—步進展到包圍件内料，因此在部 件與被封制結構(元件)之__在充分_。部分替代 性方式中，可將附接及/或對準部件安裝在⑽件本身上且 口此不會在岔封發生時造成包圍件内部空間的收縮。 第17⑷及17(b)圖描緣根據此群組實施例所構成及封 裝，-結構的範例，其中示意描緣處於預密封狀態及密封狀態之一封裝體及結構的側視圖。第17(勾圖描繪一具有一 附接部件510之密封結構或蓋部件5〇8。蓋部件5〇8與一安裝 至一基材502之包圍件506分隔，且其一起界定一設有一= 構504之内部區514。附接部件51〇係突起穿過一用於構成包 圍件506 —部分之扣持結構中的一開口。蓋5〇8及/或包圍件 5〇6(兩者皆如描繪）包括一密封材料512(譬如銲料或一可密 封黏劑）。第17(b)圖描繪已經對接之後的包圍件及蓋。密^ 材料隨後可融化或以其他方式密封住包圍件。Fresh material is melted) and the substrate has been removed temporarily (any residue of the release layer can be removed by etching, grinding, polishing, etc. if necessary). Figure 15 (^ 0, the remaining sacrificial material has been etched through the holes in the package. In the figure, the solder (usually has a higher melting point than the solder used for the release layer) is melted to seal the component 20 ( This step is usually performed in a heated room or a vacuum chamber filled with the required gas. In addition, the embodiment is shown in Figures 16 to 16. In this embodiment, the individual isolation components (components, components, etc.) of the structure Anchor to other components and the inside surface of the package to completely etch the sacrificial material while keeping the isolated portion 31 200422250 in place. Only a single small hole 446 needs to be sealed by solder 45 (in some alternative ways, Multiple holes can be supplied), and if the inside of the package can be air at atmospheric pressure (VS. such as an inert gas or vacuum) or if the structure 424 and the surrounding can be achieved in an environment with the required gas or vacuum 5 The operation of attaching the piece 462 to the final substrate 480 does not require this hole and the adjacent fresh material. The sole purpose of the hole and solder remaining is to create a seal after the "substrate exchange," The internal atmosphere of the body. In Figure 16 (a), a member 424 has been fabricated on a metal release layer 474 (such as a low melting point solder) applied to a temporary substrate 444 in a top-first manner. High High dimensional ratio of the melting point solder · 10 "pillar" 456 (in fact, a low melting point solder can also be used, in this example, during the steps leading to the state shown in Figure 16 (d), During the separation operation completed in Figure 16 (Figure 16), the column will be detached.) In Figure 16 (Figure 16), the sacrificial material 468 has been completely etched before the final substrate is attached. -The last substrate coated with an adhesive layer 486. Figure 16 (Figure I5 shows the release layer 474 as being removed or otherwise released its gripping effect on the temporary substrate 444, and the temporary substrate The material is shown to be removed. In Figure i6 (e), the higher melting point solder 456 melts to seal the component and because φ becomes unstable during melting, the column "drums" due to the high size ratio (length / diameter). Since _ up) ". · 20 Another group of embodiments provides a removable attachment to the enclosure. Cover). In these embodiments, the sealing structure is initially positioned to be engraved and then moved or dropped into the sealed position. By attaching the sealing structure to the enclosure, the cover can be kept attached to during the engraving The enclosure and may then be positioned with enhanced alignment. In some embodiments, the attachment component 32 200422250 ίο 15 20 may be added by one or more alignment components, and one or more trowels may be used In the embodiment, there are 0 attachment parts and / or alignment parts. In some embodiments, the turning parts and / or alignment materials can be positioned on the parts and / or the alignment parts. The points around the structure are replaced by 1 point. In an exemplary embodiment, the material of the enclosure or the sealing structure may be used. In the embodiment of the towel, the movement of the sealing structure on the part may create blood and progress to the surrounding material. Therefore, the __ of the component and the sealed structure (element) is sufficient. _. In some alternatives, the attachment and / or alignment components may be mounted on the rafter itself and this will not cause the interior space of the enclosure to shrink when a bifurcation occurs. Figures 17 (a) and 17 (b) depict the edge formed and packaged according to this group of embodiments, an example of a structure, in which a side view of the package and structure in which the edge is in a pre-sealed state and a sealed state is schematically shown. Section 17 (the sketch depicts a sealing structure or cover member 508 with an attachment member 510. The cover member 508 is separated from a surrounding member 506 mounted to a substrate 502, and together defines a set of = The inner region 514 of the structure 504. The attachment member 51 is a protrusion that passes through an opening in a retaining structure for forming a part 506 of the enclosure. The cover 5 08 and / or the enclosure 5 06 (both As depicted) includes a sealing material 512 (such as solder or a sealable adhesive). Figure 17 (b) depicts the enclosure and lid after it has been mated. The sealant can then melt or otherwise seal the enclosure.

在描繪的範例中，將用於蝕刻結構之流動通道定位成 為沿著包圍件周邊。在部分貫施例中可接受此方式，但如 果包圍件較寬，只來自結構邊緣或周邊之過多的蚀刻劑將 會造成問題(譬如緩慢的蝕刻時間、暴露於蝕刻劑造成結構 33 200422250 周邊的損傷及類似問題）。其他實施例中，可能具有其他通 道及密封組態（譬如’其中在蓋的整個内部中供應此等通 道）。 結構及包圍件較佳在可犧牲材料（譬如鋼)姓刻期間呈 5上下顛倒或其他方式呈現不同定向。當所有可犧牲材料被 餘刻時’蓋可自由移動且結構及包圍件受到乾燥且可配置 成為以右側朝上，使得蓋“掉落，，至如第i7(b)圖所示之一薄 鍵銲料層頂上的-坐接位置内。接著，將封裝體加熱以在 盍與包圍件之間形成-銲料炫接以完成封裝。如上文所描 # 繪’蓋及包圍件可具有銲料鍍覆的周邊，故不需要濕潤結 構性材料。 第1如)至I8⑷圖騎可在密封包圍件方面具有功用 ^其他替代性組態。如上述’钱刻位於—蓋或包圍件内部 b中的絲可有效降低触刻的時間且在部分組態中，不需要 广此等孔束缚成為可被充填銲料密封之尺寸。第π⑷圖描 繪-具有密封材料524之包圍件從，其中將密封材料似定 位成為靠近延伸穿過孔526之開口。蓋部件528可移式附接 # 至包圍件，蓋部件528形成於較低位置中且一旦已經完成蝕 刻之後且需要密封住結構則可移動至更高處。蓋部件包括 . 2〇 I伸牙過且與開口 526略微偏移之開口 536。第18(b)圖描繪 處於相對定位以產生可發生密封的閉合狀態時之包圍件及 蓋。第18(c)圖顯示第i8(a)圖的結構之俯視圖，其中可經由 延伸穿過包圍件522之孔506來看見蓋部件528。蓋528的孔 516以虛線顯示。 34 200422250 第18(d)圖顯示一替代性組態，其中將附接結構定位在 包圍件538周邊上且其中包圍件部分54〇(形成一具有一唇 之溝槽以卡制住蓋546)可包括協助提供蝕刻劑之進入處的 開口 544。 5 某些替代性實施例中，不需將結構氣密型密封在包圍 件内即可實行本文所揭露的封裝技術。 某些替代性實施例中，銲料的沉積或形成方式可盡量 降低或甚至消除將其平面化的需求（譬如可能藉由選擇性 沉積至低於下個平面化位準之高度或沉積在空隙中等方 10 式）〇 其他替代性實施例中，蓋不需呈平面或僅呈低度外形 (亦即，包圍件的另-半可能包含已經電化學製造或已經以 部分其他方式製造之結構性組件）。 15 20 其他替代性實施例中，可能在餘除可犧牲材料之後， 將-蓋放置在-包圍件上方，且此蓋係覆有(特別是在從蓋 到包圍件之橋接區中卜環氧樹脂或其他材料^成穷封 操作。其他實施例中，蓋可經由一推拔狀表面對接至㈣ 件。其他實施例中，可使用銲料、其他可融材料、黏劑及 類似物來在包圍件與蓋之間建立一預備結合或密封，同時 利用-具有環氧樹脂或其他材料(譬如經電_、賴或 其他方式施加的金屬）之覆塗層來增強封裝的整體性/ 下列的專利申請案及專利案以整體引用 專利申請案或專利案的主旨包括在表令以幫助讀者 找到特定類型的原理。無意將主體物的涵蓋範圍傷限於確 35 200422250 切指出之主題，而是，涵蓋範圍包括了這些申請案中找到 之所有主體物。這些涵蓋的申請案之原理可以許多方式與 本申明案的原理合併：譬如，可能自原理組合產生用於製 造結構之經增強的方法、可獲得經增強的結構、可產生經 5增強的裝置、及類似作用。 2002年1〇月1日提交名稱為“包括用於接受組件的對準 及/或扣持治具之單調性結構，，的美國專利申請案 60/415,374號一般係有關提供一種用於接收多個組件之永 久性或暫時性對準及/或扣持結構。較佳經由數個項沉積操 10作（譬如電沉積操作）單調性形成此等結構。此等結構通常包 括用以控制或有助於將組件相對於彼此定位之兩或更多個 定位治具，此等特性可能包括（1)定位導件或阻止部，其固 疋住或至少部份地限制組件在一或多種定向或方向之定 位，（2)扣持部件，其將經定位的組件固持在所需要的定向 15或位置中，及(3)定位及/或扣持部件，其接收及固持住調整 模組，組件可固定在調整模組内且可利用調整模組來微調 組件的位置及/或定向。 20 20〇3年4月21日提交名稱為“用於降低經電化學製造的 結構的薄層之間的不連續性之方法，，之美國專利/二案 60/442，166號一般係有關提供電化學製造方法及用於從數 個黏附層材料來製造三維結構之裝置之各種實施例，其中 包括用於降低相鄰薄層之間轉折部的不連續性之找作戈会士 在與具有 —維結構In the depicted example, the flow channel for the etched structure is positioned along the periphery of the enclosure. This method is acceptable in some embodiments, but if the enclosure is wide, too much etchant from only the edges or the periphery of the structure will cause problems (such as slow etching time, exposure to etchant caused by the structure 33 200422250 peripheral Damage and similar issues). In other embodiments, there may be other channels and seal configurations (e.g., where these channels are supplied throughout the interior of the cover). The structure and the surrounding parts are preferably turned upside down or otherwise oriented differently during the engraving of the sacrificial material (such as steel). When all the sacrificable material is left for a while, the cover is free to move and the structure and enclosure are dried and can be configured to face right, so that the cover "drops" to a thickness as shown in Figure i7 (b). On the top of the solder layer of the key, in the seated position. Next, the package body is heated to form a solder joint between the ridge and the enclosure to complete the package. As described above, the cover and the enclosure may have solder plating Surrounding, so no need to wet structural materials. 1st example) to I8 can be used to seal the enclosure ^ other alternative configurations. As described above, "money is located in the cover-the wire inside the cover or b It can effectively reduce the time of engraving and in some configurations, it is not necessary to widen these holes to a size that can be sealed by filling solder. Figure π⑷ drawing-a surrounding piece with sealing material 524 from which the sealing material is positioned like Become close to the opening extending through the hole 526. The cover member 528 is removably attached to the enclosure, the cover member 528 is formed in a lower position and can be moved to a higher position once the etching has been completed and the structure needs to be sealed Cover The pieces include an opening 536 that extends over the teeth and is slightly offset from the opening 526. Figure 18 (b) depicts the enclosure and cover when positioned relatively to create a closed condition where a seal can occur. Section 18 (c) The figure shows a top view of the structure in figure i8 (a), where the cover member 528 can be seen through the hole 506 extending through the enclosing member 522. The hole 516 in the cover 528 is shown in dashed lines. 34 200422250 Figure 18 (d) shows a An alternative configuration in which the attachment structure is positioned on the periphery of the enclosing member 538 and wherein the enclosing member portion 54 (forms a groove with a lip to hold the cover 546) may include assisting in providing access to the etchant. Opening 544. 5 In some alternative embodiments, it is not necessary to hermetically seal the structure within the enclosure to implement the packaging technology disclosed herein. In some alternative embodiments, the solder can be deposited or formed in a way that is as far as possible Reduce or even eliminate the need to planarize it (such as by selectively depositing to a height below the next planarization level or depositing in a void, etc.). In other alternative embodiments, the cover need not be rendered Flat or low profile (That is, the other half of the enclosure may contain structural components that have been electrochemically manufactured or have been manufactured in some other way.) 15 20 In other alternative embodiments, the- Placed over the enclosure, and the cover is covered (especially epoxy resin or other materials in the bridging area from the cover to the enclosure to form a poor seal operation. In other embodiments, the cover can be pushed through The surface is butted to the cymbal. In other embodiments, solder, other meltable materials, adhesives, and the like may be used to establish a preliminary bond or seal between the enclosure and the cover, while utilizing-with epoxy or other Coatings of materials (such as metals applied by electricity, metal, or other methods) to enhance the integrity of the package / The following patent applications and patents are incorporated by reference in their entirety Help readers find specific types of principles. It is not the intention to limit the scope of the subject matter to the exact subject matter identified. Instead, the scope of coverage includes all subject matter found in these applications. The principles of these covered applications can be combined with the principles of this declaration in many ways: for example, it is possible to create an enhanced method for manufacturing a structure from a combination of principles, to obtain an enhanced structure, to produce an enhanced device, And similar effects. U.S. Patent Application No. 60 / 415,374, filed on October 1, 2002 and entitled "Includes a monotonic structure for aligning and / or holding fixtures for receiving components, is generally related to providing a means for receiving multiple Permanent or temporary alignment and / or retaining structure of each component. These structures are preferably formed monotonically through several deposition operations (such as electrodeposition operations). These structures usually include Two or more positioning jigs that help position components relative to each other. These characteristics may include (1) positioning guides or stoppers that hold or at least partially restrict the component in one or more orientations or Orientation in direction, (2) a holding component that holds the positioned component in the required orientation 15 or position, and (3) a positioning and / or holding component that receives and holds the adjustment module, component It can be fixed in the adjustment module and the adjustment module can be used to fine-tune the position and / or orientation of the component. 20 Submitted on April 21, 2003 entitled "Between thin layers for reducing electrochemically manufactured structures" Discontinuity method, / Second Case No. 60/442, 166 generally relates to various embodiments for providing an electrochemical manufacturing method and a device for manufacturing a three-dimensional structure from a plurality of adhesive layer materials, including a method for reducing a turning portion between adjacent thin layers. The Discontinuity of Finding Ge Huishi in and Having-Dimension Structure

構。部分實施例改善了所產生結構的尺寸(特別是 偏移邊緣之薄層相關聯的轉折區中）與得自代I 36 200422250 的原始資料之結構的預定尺寸之間的符合性。部分實施例 利用選擇性及/或毯覆化學及/或電化學沉積製程、選擇性及 或毯覆化學及/或電化學#刻製程、或其組合。部分實施例 在形成單層期間利用多步驟沉積或蝕刻操作。 5 麗年12月2G日提交名稱為“包括噴m金屬或粉末塗 覆製程之EFAB方法及裝置，，的美國專利申請案續外似 號-般有關提出經由-組合的電化學製造方法及一熱喷灑 製程來形成結構的技術之本發明的各種實施例。第一組實 施例中，選擇性沉積係經由貼附性接觸遮罩製程發生，在 修 10毯覆沉積製程中使用熱噴麗來充填選擇性沉積製程所留下 的空隙。第一組實施例中，利用經由一貼附性接觸遮罩的 選擇性沉積來擺設具有與一喷灑金屬佔用的一網圖案相似 的圖案之第一材料。這些其他實施例中，將第二金屬毯覆 沉積以充填至第一圖案中所留下之空隙中，將兩沉積物平 15面化成為一可能略為高於理想薄層厚度之共同位準，（譬如 利用蝕刻）移除第一材料，且將第三材料喷灑至蝕刻操作所 留下之空隙内。將第一及第二組實施例中所產生的沉積物 馨 平面化至一理想薄層厚度，以準備添加額外的薄層來從數 個黏附層形成二維結構。其他實施例中，可使用額外材料 ‘ 20 且可使用不同製程。 . 2002年11月26日提交名稱為“用於形成三維結構之非 貼附性遮罩及方法及裝置，，之美國專利申請案6〇/429,484號 一般有關用於從數個鋪覆且黏附的薄層來形成多層結構 (言如元件)之電化學製造。一般利用與可供其運作的基材呈 37 200422250 5 10 獨立無關之遮罩來達成選擇性圖案化。這些遮罩可讓材料 選擇性沉積在基材上或其可選擇性蝕刻一基材，其中在所 生成的空隙充填一選用材料之後可受到平面化以實質產生 選用材料的選擇性沉積。遮罩可以接觸模式或緊鄰模式使 用。在接觸模式中，遮罩及基材實體上對接以形成大致獨 立的處理囊部。在緊鄰模式中，遮罩及基材定位為充分接 近故得以形成合理獨立的處理囊部。部分實施例中，遮罩 可具有貼附性接觸表面（亦即，具有可顯著地貼附至基材表 面以與其形成密封之足夠變形性之表面）或者其可具有半 剛性或甚至剛性表面。可進行後沉積蝕刻操作以移除溢料 沉積物（薄的不良沉積物）。 15 2〇〇3年5月7日提交名稱為“經增強的後沉積處理之電 製^方去的美國專利申請案1〇/434,294號一般有關提 供一種用於從數個黏附薄層來產生三維結構之電化學製造 方法，其中各薄層包含至少一結構性材料（譬如鎳）及已經完 成斤有薄層的形成之後將從結構性材料ϋ除之至少一可犧 牲材料（譬如鋼）° —含有亞氯酸鹽的鋪刻劑（譬如Ethone &quot; '蝕抑制劑（譬如硝酸鈉）合併以防止結構性材料 20 038)與 口 Ά材料移除期間產生凹用於乾燥經姓刻結構 而不使乾▲製程造成表面黏在―起之簡單製程係包括在姓 ==結構浸人水中，然後浸人醇中且隨後將結構放在 一烤爐中乾燥。 2〇〇3年5月7 經電化學製造的 日提交名稱為“具有介電性或活性基底之 、、、°構以及此專結構的製造方法及裝置，，的 38 200422250 美國專利案10/434,493號一般有關經電化學製造在一暫時 (譬如傳導性)基材上且隨後結合至一永久性（譬如介電性、 經圖案化、多材料或其他功能)基材且從暫時基材移除之多 層結構。部分實施例中，此等結構從頂層至底層形成，所 5以結構的底層變成黏附至永久性基材，但在其他實施例 中，結構從底層至頂層形成且然後發生一雙重基材交換。 永久性基材可能是一種（譬如藉由一黏劑）結合至層狀結構 之固體，或其可能開始是一種可流動材料並由於固體化期 間發生結合而與結構一部分相鄰地固體化或在周圍固體 10化。多層結構可能在附接永久性基材之前從一可犧牲材料 釋放，或其可在附接之後釋放。 15 20 03年5月7日提交名稱為“用於經電化學製造結構之 多步驟釋放方法，，的美國專利申請案1〇/434,497號-般有關 從構成為可界定一所需要的結構且可附接至一基材之至少 -結構性材料（#如錄）並_繞朗需要結構的至少一可 =牲㈣(譬如銅)來電化學製造之多層結構。在結構形成之 j，糟由-多階段㈣操作來移除可犧牲材料。部分 列中’《除的可犧牲㈣可能定位在 道 ::物内或-添力•件内。多階段峨作可由= 後處理活動加以分離，其可由清潔 的 操作或類似操作加以分離。障壁^由血=壁材料移除 由、基材的接觸定在位置中，或者其可 曰 牲材料SI定在位置巾且因此可在 ，w犧 餘刻之後加以自由地移除。 口、、可犧牲材料被 39 200422250 ίο 15 20 扇3年5月7日提交名稱為、 蝕刻及充填空隙之用於電化學製&amp;姓織層或經由選擇性 美國專利案_，519號_般;關==法及裝置，，之 性姓刻第-材娜如經由—叫、^料―_、選擇 姓刻所生成的空隙中、然後將沉積、弟-材料以充填在 的薄層且隨後將額外薄屛e / 、’面化以接壤所生成 化學製造之多層結構。;：!=先前形成的薄層來進行電 擇性類型。用於形成連續薄層之;^ 於毯覆或選 具有變異或沒有變異的方式 私的重覆可能係以 案;沉積的數量或存在或相關:::下：面的變異:圖 操作；所沉積的材料、或操作的順序卜_ ^或平面化 與部分薄層相關聯沉積的材料及㈣他·貫〜例利用將 材料加以互織之操作來形❹層結構。，θ目關聯沉積的 本發明存在各種其他實施例。部分這些實施例可能基 於本文原理與則丨时式併人本文的各歸理之一組合。 部分實施例可能未使躲何毯覆沉積製程及/或其可能未 使用平面化製程。部分實施例可能包含將數種不同材料選 擇性沉積在單層或不同薄層上。部分實施例可能使用並非 電沉積製程之毯覆沉積製程。部分實施例可能使用並非接 觸遮罩製程且甚至並非電沉積製程之選擇性沉積製程。部结构。 Structure. Some embodiments improve the consistency between the size of the resulting structure (especially in the transition zone associated with the thin layer of offset edges) and the predetermined size of the structure of the original data obtained from Generation I 36 200422250. Some embodiments utilize selective and / or blanket chemical and / or electrochemical deposition processes, selective and / or blanket chemical and / or electrochemical #etching processes, or a combination thereof. Some embodiments utilize multiple steps of deposition or etching operations during formation of a single layer. 5 The U.S. patent application filed on December 2G, entitled "EFAB method and device including spraying metal or powder coating process, is continued, and generally related to proposing via-combined electrochemical manufacturing methods and a Various embodiments of the present invention for the technique of forming structures using a thermal spraying process. In the first set of embodiments, selective deposition occurs via an adhesive contact masking process, and thermal spraying is used in a 10 blanket deposition process. To fill the gap left by the selective deposition process. In the first group of embodiments, the selective deposition through an adhesive contact mask is used to arrange the first element having a pattern similar to a mesh pattern occupied by a spray metal. A material. In these other embodiments, a second metal blanket is deposited to fill the void left in the first pattern, and the two deposits are flattened to a common surface that may be slightly higher than the ideal thin layer thickness. Level, (for example, using etching) to remove the first material, and spray a third material into the gap left by the etching operation. The deposits generated in the first and second embodiments are planarized to The ideal thin layer thickness, in order to add additional thin layers to form a two-dimensional structure from several adhesive layers. In other embodiments, additional materials can be used and 20 different processes can be used.. Submitted November 26, 2002 "A non-adhesive mask and method and device for forming a three-dimensional structure. US Patent Application No. 60 / 429,484 generally relates to a method for forming a multilayer structure from several overlying and adhering thin layers (say, such as Element). Selective patterning is generally achieved using masks that are independent of the substrates on which they operate. These masks allow materials to be selectively deposited on a substrate or they can selectively etch a substrate, wherein the generated voids can be planarized after filling with a selected material to substantially produce selective deposition of a selected material. Masks can be used in contact mode or next to mode. In the contact mode, the mask and the substrate are physically docked to form a substantially independent processing capsule. In the immediate mode, the mask and substrate are positioned sufficiently close to form a reasonably independent processing capsule. In some embodiments, the mask may have an adherent contact surface (i.e., a surface that is sufficiently deformable to attach significantly to the surface of the substrate to form a seal therewith) or it may have a semi-rigid or even rigid surface. Post-deposition etch operations can be performed to remove flash deposits (thin, poor deposits). 15 U.S. Patent Application No. 10 / 434,294, filed on May 7, 2003, entitled "Enhanced Post-Deposition Process Electrical System" generally relates to the provision of a method for generating from several thin adhesive layers. A three-dimensional structure electrochemical manufacturing method, in which each thin layer includes at least one structural material (such as nickel) and at least one sacrificial material (such as steel) will be removed from the structural material after the formation of the thin layer has been completed. — Chlorite-containing etchants (such as Ethone &quot; 'corrosion inhibitors (such as sodium nitrate) combined to prevent structural materials 20 038) and dent materials during the removal of dents to dry the carved structure and The process of not making dry ▲ The process causes the surface to stick. The simple process is to immerse the structure in the surname == structure, then immerse it in alcohol and then dry the structure in an oven. May 7, 2003 The date of submission by electrochemical manufacturing is "manufactured method and device for dielectric structures with or without a dielectric or active substrate, as well as this specialized structure," 38 200422250 US Patent No. 10 / 434,493 generally relates to electrochemical manufacturing For a while A multilayer structure that is (e.g., conductive) a substrate and subsequently bonded to a permanent (e.g., dielectric, patterned, multi-material, or other function) substrate and removed from the temporary substrate. In some embodiments, these structures are formed from the top layer to the bottom layer, so the bottom layer of the structure becomes adhered to the permanent substrate, but in other embodiments, the structure is formed from the bottom layer to the top layer and then a double substrate exchange occurs. The permanent substrate may be a solid (such as by an adhesive) bonded to the layered structure, or it may begin as a flowable material and solidify adjacent to a part of the structure due to bonding during solidification or during solidification The surrounding solids were 10%. The multilayer structure may be released from a sacrificial material before attachment to the permanent substrate, or it may be released after attachment. 15 20 U.S. Patent Application No. 10 / 434,497, filed on May 7, 03, entitled "A Multi-Step Release Method for Electrochemically Fabricated Structures"-generally relates from a composition to a structure that can be defined and At least-structural materials (# 如 录) that can be attached to a substrate and _Lang Lang needs at least one structure of the structure = animal (such as copper) to make a multilayer structure electrochemically. In the formation of the structure, it is caused by -Multi-stage sacrifice operation to remove sacrificable materials. Some of the columns' "Removable Sacrifice Sacrifice may be located in Tao :: inside or -Tianli • piece. Multi-stage masterpiece can be separated by post-processing activities, It can be separated by a cleaning operation or the like. The barrier ^ is removed by blood = wall material is removed, the contact of the substrate is set in position, or its material SI is set in position and therefore can be left at w Freely removed after engraving. Oral, sacrificable material was 39 200422250 ίο 15 20 fan submitted on May 7, 3 years, named, etched and filled with voids for electrochemical system &amp; surfacing or via selective U.S. Patent Case _, No. 519, General; Off == Law and Device, ， 之 性 的 姓 刻 第-材 娜 如 以 — 叫 、 ^ 料 ―_, choose the gap generated by the last name, and then deposit the thin layer of the material and fill the thin layer and then add extra thin 屛 e / 、 'Facing a multi-layered structure made of chemicals produced by the border.;:! = Previously formed thin layer for elective type. Used to form a continuous thin layer; ^ For blankets or choose a method with or without variation Private repetition may be based on the case; the number or existence of deposits or related ::: below: surface variation: map operations; the deposited materials, or the sequence of operations, or planarization and deposition associated with some thin layers The materials and the sun-like materials are used to interweave the materials to form the layer structure. There are various other embodiments of the present invention deposited by theta mesh. Some of these embodiments may be based on the principles and rules of this article. It is combined with one of the attributions in this article. Some embodiments may not use a blanket deposition process and / or may not use a planarization process. Some embodiments may include selective deposition of several different materials in a single layer Or on different layers. Part Embodiments may use a blanket deposition process that is not an electrodeposition process. Some embodiments may use a selective deposition process that is not a contact mask process and not even an electrodeposition process.

分實施例可能使用鎳作為一結構性材料，而其他實施例可 能使用不同材料諸如金、銀或可從銅及/或部分其他可犧牲 材料分離之任何其他可電沉積材料等。部分實施例可能使 用銅作為具有或不具有一可犧牲材料之結構性材料。部分 40 200422250 實施例可能移除一可犧牲材料，而其他實施例則否。部分 實施例中，陽極可能不同於一接觸遮罩支撐件，且支撐件 可能為-多孔結構或其他穿孔狀結構。部分實施例可能使 用多個具有不同圖案之貼附性接觸遮罩，以將材料的不同 5選擇性圖案沉積在不同薄層及/或單層的不同部分上。部分 貫施例中，由於以可使CC遮罩的貼附性部分與基材之間的 密封從貼附性材料面移位至貼附性材料内側邊緣之方式發 生沉積，將藉由貼附性接觸遮罩拉離基材來增強沉積深度。 鑒於本文的原理，熟習該技術者可得知本發明之許多 10進一步實施例、設計及使用的替代性方式。因此，本發明 無意限制在上述的特定示範性實施例、替代性方式及使用 方式而只受限於下文提出的申請專利範圍。 【圖式簡單說明】 第1(a)至1(C)圖示意性描繪一CC遮罩鍍覆製程之各種 15階段的側視圖，而第1(句至1(g)圖示意性描繪一使用一不同 型CC遮罩之CC遮罩鍍覆製程的各種階段之側視圖； 第2(a)至2(f)圖示意性描繪一施加以形成一特定結構之 電化學製造方法的各種階段之側視圖，其中選擇性沉積一 可犧牲材料並且毯覆沉積一結構性材料； 20 第3(a)至3(c)圖示意性描繪可用以人工式實行第2(a)至 2(f)圖所描繪的電化學製造方法之各種範例次總成的側視 圖， 第4(a)至4(i)圖示意性描繪利用經黏附的遮罩鍍覆來形 成一結構的第一薄層，其中第二材料的毯覆沉積係鋪覆於 41 200422250 第一材料的沉積位置與第一材料本身之間的開口上； 苐5(a)圖描緣第一群組實施例之基本步驟的方塊圖； 第5(b)圖以方塊圖形成提出第二群組實施例之基本步 驟； 5 第6(a)至6(c)圖描繪根據本發明一較佳實施例來製造 結構時之各種階段的側視圖； 第6(d)圖描纟會分離然後鋪設之第6(b)圖的結構之上兩 層的俯視圖； 弟7(a)及7(b)圖描繪第6(b)圖的密封層之替代性組態； 10 第8(a)圖描繪第6(b)圖的最後兩層之一種替代性組態 的側視圖，而第8(b)圖描繪首先彼此分離然後鋪設之替代性 結構之上兩層的俯視圖； 第9(a)至9(d)圖描繪顯示用於一包圍壁之一替代性開 口及密封組態的特性之側視圖及俯視圖； 15 第l〇(a)至10(i)圖描繪各種替代性開口及密封組態； 第11(a)至11(c)圖描繪各種替代性開口及密封組態； 第12(a)至12(c)圖描繪各種替代性開口及密封組態； 第13(a)及13(b)圖描繪一替代性開口及密封技術； 第14(a)及14(b)圖描繪一用於密封開口之替代性技術； 20 第15(a)至15(f)圖描繪用於封裝一結構之〜替代性實施 例的各種階段之侧視圖； 第16(a)至16(e)圖描繪用於封裝一結構之另一實施例 的各種階段之側視圖； 第17(a)及17(b)圖描繪用於移除可犧牲材料及用於密 42 200422250 封包裝體之一替代性組態相關聯之側視圖； 第18(a)至18(b)圖描繪用於移除可犧牲材料及用於密 封包裝體之一替代性組態之側視圖； 第18(c)圖描繪對應於第18(a)圖的包圍件及蓋之側俯 5 視圖； 第18(d)圖描繪用於移除可犧牲材料及用於密封包裝體 之一替代性組態之側視圖。 【圖式之主要元件代表符號表】 44…致動器 46,522,538…包圍件 48…載體 52…研磨板 54…精密X階段 56…精密Y階段 58…槽 64…電解質槽 66…電鍍溶液 68…足部 72…框架 82，114,502 …基材 84…可圖案化的光阻 92⑻-92(c)···開口或開孔 88…表面 94…第一金屬 96…第二金屬Sub-embodiments may use nickel as a structural material, while other embodiments may use different materials such as gold, silver, or any other electrodepositable material that can be separated from copper and / or some other sacrificial materials. Some embodiments may use copper as a structural material with or without a sacrificial material. Some 40 200422250 embodiments may remove a sacrificial material, while other embodiments do not. In some embodiments, the anode may be different from a contact shield support, and the support may be a porous structure or other perforated structure. Some embodiments may use multiple adhesive contact masks with different patterns to deposit different selective patterns of materials on different thin layers and / or different portions of a single layer. In some embodiments, the deposition occurs in such a manner that the seal between the adhesive portion of the CC mask and the substrate is shifted from the surface of the adhesive material to the inner edge of the adhesive material. The sexual contact mask is pulled away from the substrate to enhance the depth of deposition. In view of the principles herein, those skilled in the art will know many alternative embodiments of further embodiments, designs, and uses of the present invention. Therefore, the present invention is not intended to be limited to the specific exemplary embodiments, alternatives, and usages described above, but is limited only by the scope of patent applications set forth below. [Schematic description] Figures 1 (a) to 1 (C) schematically depict side views of various 15 stages of a CC mask plating process, and Figures 1 (sentence to 1 (g) are schematic A side view depicting various stages of a CC mask plating process using a different type of CC mask; Figures 2 (a) to 2 (f) schematically depict an electrochemical fabrication method applied to form a specific structure Side view of the various stages in which a sacrificial material is selectively deposited and a structural material is deposited over the blanket; 20 Figures 3 (a) to 3 (c) schematically depict that 2 (a) can be performed manually Side views of various exemplary sub-assemblies of the electrochemical manufacturing method depicted in Figures 2 to (f), and Figures 4 (a) to 4 (i) schematically depict the formation of a structure using adhered mask plating The first thin layer of which the blanket deposition system of the second material is overlaid on the opening between the location where the first material is deposited and the first material itself; Block diagram of the basic steps of the example; Figure 5 (b) is a block diagram showing the basic steps of the second group of embodiments; 5 Figures 6 (a) to 6 (c) depict a Side view of the various stages of the preferred embodiment for manufacturing the structure; Figure 6 (d) depicts a top view of the two layers above the structure of Figure 6 (b) that would separate and then lay; brothers 7 (a) and 7 ( b) Figure depicts an alternative configuration of the seal layer in Figure 6 (b); 10 Figure 8 (a) depicts a side view of an alternative configuration of the last two layers in Figure 6 (b), and Figure 8 (b) Figure depicts a top view of two layers above an alternative structure that is first separated from each other and then laid; Figures 9 (a) to 9 (d) depict characteristics showing an alternative opening and seal configuration for an enclosing wall Side and top views; 15 Figures 10 (a) to 10 (i) depict various alternative opening and sealing configurations; Figures 11 (a) to 11 (c) depict various alternative opening and sealing configurations; Figures 12 (a) to 12 (c) depict various alternative opening and sealing configurations; Figures 13 (a) and 13 (b) depict an alternative opening and sealing technique; Figures 14 (a) and 14 (b) ) Figure depicts an alternative technique for sealing an opening; 20 Figures 15 (a) to 15 (f) depict side views of various stages of a ~ alternative embodiment for packaging a structure; Figures 16 (a) to Figure 16 (e) depicts a structure used to encapsulate a structure Side views of various stages of another embodiment; Figures 17 (a) and 17 (b) depict the sides associated with an alternative configuration for removing sacrificial material and for sealing an enclosure Views; Figures 18 (a) to 18 (b) depict a side view of an alternative configuration for removing sacrificial material and for sealing a package; Figure 18 (c) depicts a view corresponding to 18 (a) 5) A side elevation view of the enclosure and cover of Figure 5; Figure 18 (d) depicts a side view of an alternative configuration for removing sacrificial material and for sealing the package. [Representative symbol table of main components of the drawing] 44 ... Actuators 46, 522, 538 ... Envelopes 48 ... Carrier 52 ... Grinding plate 54 ... Precision X stage 56 ... Precision Y stage 58 ... Tank 64 ... Electrolyte tank 66 ... Electroplating solution 68 ... Foot Portion 72 ... Frame 82, 114,502 ... Substrate 84 ... Patternable photoresist 92⑻-92 (c) ... Opening or opening 88 ... Surface 94 ... First metal 96 ... Second metal

6…金屬基材 8…CC遮罩 8’…遮罩 10…貼附性或可變形絕緣體 10’···經圖案化貼附性材料 12，12’，62…陽極 16…電解質 20…支撐結構 22’…沉積物 22…沉積材料 26a，26b···開孔 32…示範性人工電化學製造系統 34…基材固持次系統 36…CC遮罩次系統 38…毯覆沉積次系統 40…平面化次系統 42…線性滑件 43 200422250 102…步驟 181-185,202…結構性材料 102’…步驟 188…突部 104…步驟 194…囊部 106…步驟 196…密封材料的較薄區 108…步驟 204…沉積的密封材料 108’…步驟 204’…流動的密封材料 110…步驟 212,546 …蓋 112…薄層 214…壁 122···結構性組件 302…封裝結構 124···保護性包圍件 306…阻絕部件 126，126’，174，186,304,536,544 308…材料 …開口 4〇2,444…暫時基材 128，192,216,512,52+&quot;密封材料 408,474…金屬釋放層 132,468···可犧牲材料 424,504…結構 134…内部 432,480…最後基材 142···第二至最後層(最左組件） 438,486…黏附層 144···組件 144’…最後層 148···邊界線 152…橫桿 154,156···橋接部件 162，178…密封材料層 172···包圍件結構 176…斜面 180···***部 446···小孑L 450···銲料 456···高尺寸比柱 506,516,526.&quot;孔 508,528…蓋部件 510···附接部件 514···内部區 540···包圍件部分 446 ... metal substrate 8 ... CC mask 8 '... mask 10 ... adhesive or deformable insulator 10' ... patterned adhesive material 12,12 ', 62 ... anode 16 ... electrolyte 20 ... support Structure 22 '... sediment 22 ... deposited material 26a, 26b ... opening 32 ... exemplary artificial electrochemical manufacturing system 34 ... substrate holding sub-system 36 ... CC mask sub-system 38 ... blanket deposition sub-system 40 ... Flattening secondary system 42 ... linear slider 43 200422250 102 ... steps 181-285, 202 ... structural material 102 '... step 188 ... protrusion 104 ... step 194 ... capsule 106 ... step 196 ... thinner region 108 of sealing material ... step 204 ... deposited sealing material 108 '... step 204' ... flowing sealing material 110 ... steps 212,546 ... cover 112 ... thin layer 214 ... wall 122 ... structural component 302 ... encapsulation structure 124 ... protective enclosure 306 ... blocking parts 126,126 ', 174,186,304,536,544 308 ... material ... opening 402,444 ... temporary substrate 128,192,216,512,52 + &quot; sealing material 408,474 ... metal release layer 132,468 ... sacrificial material 424,504 ... structure 134 ... Parts 432,480 ... Final substrate 142 ... The second to last layer (leftmost component) 438,486 ... Adhesive layer 144 ... Component 144 '... Final layer 148 ... Boundary line 152 ... Cross bar 154,156 ... Bridge components 162, 178 ... Sealing material layer 172 ... Enclosure structure 176 ... Bevel 180 ... Bulge 446 ... Small 孑 L 450 ... Solder 456 ... High size ratio post 506,516,526. &Quot; Hole 508,528 ... Cover member 510 ... Attachment member 514 ... Inner area 540 ... Enclosure portion 44

Claims (1)

200422250 拾、申請專利範圍： 1. 一種電化學製造方法，其用於從數個經黏附之薄層產生 一個三維結構，該製造方法包含： (A) 將一薄層的至少一部分沉積在一基材上，其中 5 該基材可包含先前沉積的材料；及 (B) 形成數個薄層，以使得各連續薄層形成為鄰近 於且黏附至一先前沉積的薄層； 其中該等薄層包含至少三種不同材料，且其中該等 層具有包含下列材料之圖案： 10 (1)一所需要的結構性組件，其受到保護且由至少 一結構性材料形成； (2) —保護性包圍件，其至少部份地由一結構性材 料形成，其中該包圍件的至少一部分係至少部份地圍 繞該所需要的結構性組件，且其中該包圍件受到其中 15 至少一開口所限制； (3) —密封材料，其定位成為靠近該至少一開口；及 (4) 一可犧牲材料，其定位成為至少部份地位於該 受到保護之所需要的結構性組件與該包圍件的至少 一部分之間； 20 其中該等薄層的至少一部分之形成係包含使用一 黏附的遮罩； 其中在該等薄層形成之後，移除了定位在該所需要 的結構性組件與該包圍件的至少一部分之間之至少部 分的該可犧牲材料；及 45 其中在該可犧牲材料移除之後，使該密封材料暫時 地流動並密封住至少一開口以阻絕或顯著地限制一從 。亥包圍件外側經由該至少一經密封的開σ至該包圍件 内側之材料通道。 申π專利範圍第i項之製造方法，其中該可犧牲材料 的移除係包含蝕刻。 3. ^申請專賴圍第1奴製造方法，其巾在移除之後及 么封之前，在至少一開口内或附近的至少一位置上提供 一還原劑以還原出現在該至少—位置上之任何氧化物。 4·如申請專利範圍第丨項之製造方法，其中在移除之後及 山封之别，使一所需要的充填氣體充填至内部至少部份 地設有該所需要的結構性組件之該包圍件的一内部腔 穴。 5·如申請專利範圍第丨項之製造方法，其中在移除之後及 密封之前，内部至少部份地設有所需要的結構性組件之 該包圍件的一内部腔穴係至少部份地排空。 6·如申請專利範圍帛丄項之製造方法，其中將至少一開口 及该始、封材料定位成為使該密封材料不需在密封該開 口時流動於任何結構性材料上方。 7·如申請專利範圍第1項之製造方法，其中該至少一開口 係至少部份地由該可流動的密封材料之表面張力所密 封而k成5亥役封材料***且橋接該開口。 8.如申請專利範圍第1項之製造方法，其中至少一開口具 有斜坡狀壁以經過該包圍件、該密封材料或絲封材料 200422250 與該包圍件的一組合對於該開口提供一非固定的橫剖 面尺寸。 9. 如申請專利範圍第1項之製造方法，其中至少一開口具 有一當密封住該開口時將使該密封材料在周圍流動之 5 拘束部。 10. —種電化學製造方法，其用於從數個經黏附之薄層產生 一個三維結構，該製造方法包含： (A)將一薄層的至少一部分沉積在一基材上，其中 該基材可包含先前沉積的材料；及 10 (B)形成數個薄層，以使得各連續薄層形成為鄰近 於且黏附至一先前沉積的薄層； 其中該等薄層包含至少兩種不同材料且其中該等 薄層具有包含下列材料之圖案： (1) 一所需要的結構性組件，其受到保護且由至少 15 一結構性材料形成； (2) —保護性包圍件，其至少部份地由一結構性材 料形成，其中該包圍件的至少一部分係至少部份地圍 繞該所需要的結構性組件，且其中該包圍件受到其中 至少一開口所限制； 20 (3)—可犧牲材料，其定位成為至少部份地位於該 受到保護之所需要的結構性組件與該包圍件的至少 一部分之間； 其中在該等薄層形成之後，移除了定位在該所需要 的結構性組件與該包圍件的至少一部分之間之至少部 47 200422250 分的該可犧牲材料；及 其中該等薄層的至少一部分之形成係包含使用一 黏附的遮罩； 其中在該可犧牲材料移除之後，將一密封件形成於 5 該保護性包圍件與一密封結構之間，其中該保護性包圍 件或該密封結構的至少一者包含一可用以建立該至少 一開口的密封之密封材料以阻絕或顯著地限制一從該 包圍件外側經由該至少一經密封的開口至該包圍件内 側之材料通道。 10 11. 一種電化學製造方法，其用於從數個經黏附之薄層產生 一個三維結構，該製造方法包含： (A) 將一薄層的至少一部分沉積在一基材上，其中 該基材可包含先前沉積的材料；及 (B) 形成數個薄層，以使得各連續薄層形成為鄰近 15 於且黏附至一先前沉積的薄層； 其中該等薄層包含至少兩種不同材料，且其中該等 薄層具有包含下列材料之圖案： (1)一所需要的結構性組件，其受到保護且由至少 一結構性材料形成； 20 (2)—保護性包圍件，其至少部份地由一結構性材 料形成，其中該包圍件的至少一部分係至少部份地圍 繞該所需要的結構性組件，且其中該包圍件受到其中 至少一開口所限制； (3)至少一阻絕結構，其沿著一視線定位並包括該 48 200422250 繞該所需要的結構性組件，且其中該包圍件受到其中 至少一開口所限制；及 (3)—可犧牲材料，其定位成為至少部份地位於該 受到保護之所需要的結構性組件與該包圍件的至少 5 一部分之間。 50 200422250 至少一開口但與該保護性包圍件分隔；及 心⑷:可犧牲材料，狀位成為至少部份地位於該 又到保5隻之所需要的結構性組件與該包圍件的至少 一部分之間； 其令在該等薄層形成之後，移除了定位在該所需要 的結構性組件與該包圍件的至少一部分之間之至少部 分的該可犧牲材料；及 其中在該可犧牲材鄉除之後，沉積_密封材料使 其打擊該阻絕材料藉以抑制該密封材料大量地進入該 包圍件’其中错由持續積造該密封材料來密封住該至少 開口以阻絕或顯著地限制一從該包圍件外側經由該 至少-經密封的開口至該包圍件内側之材料通道。 種电化子衣方法’其用於從數個經黏附之薄層產生 一個三維結構，該製造方法包含： ㈧將-薄層的至少—部分沉積在—基材上，其中 該基材可包含先前沉積的材料；及 ⑼形成數個薄層’讀得各連續薄層形成為鄰近 於且黏附至一先前沉積的薄層； 其中該等薄層包含至少兩種不同材料，且其中該等 薄層具有包含下列材料之圖案·· ⑴-所需要的結構性組件，其受到保護且由至少 一結構性材料形成； (2)-保護性包圍件，其至少部份地由— 料形成，其中該包圍件的至少一部分係至少部份地圍 49200422250 Patent application scope: 1. An electrochemical manufacturing method for generating a three-dimensional structure from several adhered thin layers, the manufacturing method includes: (A) depositing at least a portion of a thin layer on a substrate 5) the substrate may include previously deposited material; and (B) forming a plurality of thin layers such that each continuous thin layer is formed adjacent to and adhered to a previously deposited thin layer; wherein the thin layers Contains at least three different materials, and where the layers have a pattern comprising: 10 (1) a required structural component that is protected and formed from at least one structural material; (2) — a protective enclosure , At least partially formed of a structural material, wherein at least a portion of the enclosure is at least partially surrounding the required structural component, and wherein the enclosure is restricted by 15 of at least one opening; (3 ) — Sealing material positioned close to the at least one opening; and (4) a sacrificial material positioned to be located at least partially in the required structural properties for protection Between the component and at least a portion of the enclosure; 20 wherein the formation of at least a portion of the thin layers includes the use of an adhesive mask; wherein after the thin layers are formed, the desired structure is removed At least a portion of the sacrificial material between the flexible component and at least a portion of the enclosure; and 45 wherein after the sacrificial material is removed, the sealing material is caused to temporarily flow and seal at least one opening to block or significantly Limit one from. The outside of the enclosure passes through the at least one sealed opening σ to the material channel inside the enclosure. The manufacturing method according to item i of the patent, wherein the removal of the sacrificial material includes etching. 3. ^ Apply for the manufacturing method of No. 1 slave. After the towel is removed and before it is sealed, a reducing agent is provided in at least one position in or near at least one opening to reduce the appearance of the at least one position. Any oxide. 4. The manufacturing method according to item 丨 of the scope of patent application, wherein after the removal and the seal difference, a required filling gas is filled into the enclosure at least partially provided with the required structural component inside An internal cavity of the piece. 5. The manufacturing method according to the scope of the patent application, wherein after the removal and before the sealing, an internal cavity of the enclosure at least partially provided with the required structural components is at least partially arranged. air. 6. The manufacturing method according to the scope of patent application, wherein at least one opening and the starting and sealing material are positioned so that the sealing material does not need to flow over any structural material when the opening is sealed. 7. The manufacturing method according to item 1 of the patent application range, wherein the at least one opening is sealed at least in part by the surface tension of the flowable sealing material and k is a 50-sealing sealing material that protrudes and bridges the opening. 8. The manufacturing method according to item 1 of the scope of patent application, wherein at least one opening has a ramp-shaped wall to pass through the enclosure, the sealing material or the silk sealing material 200422250 and the enclosure provide a non-fixed for the opening Cross-section dimensions. 9. The manufacturing method according to item 1 of the patent application scope, wherein at least one of the openings has a restraining portion that will allow the sealing material to flow around when the opening is sealed. 10. An electrochemical manufacturing method for generating a three-dimensional structure from a plurality of adhered thin layers, the manufacturing method comprising: (A) depositing at least a portion of a thin layer on a substrate, wherein the substrate The material may include previously deposited materials; and 10 (B) forming a plurality of thin layers such that each successive thin layer is formed adjacent to and adhered to a previously deposited thin layer; wherein the thin layers include at least two different materials And where the thin layers have a pattern comprising the following materials: (1) a required structural component which is protected and formed of at least 15 structural materials; (2) a protective enclosure, at least part of which The ground is formed of a structural material, wherein at least a portion of the enclosure is at least partially surrounding the required structural component, and wherein the enclosure is limited by at least one of the openings; 20 (3) —sacrificial material Which is positioned at least partially between the structural component required for protection and at least a portion of the enclosure; wherein after the thin layers are formed, the positioning is removed at the At least a portion of the sacrificial material between the required structural component and at least a portion of the enclosure; 47 200422250 points; and the formation of at least a portion of the thin layers includes the use of an adhesive mask; After the sacrificial material is removed, a seal is formed between the protective enclosure and a sealing structure, wherein at least one of the protective enclosure or the sealing structure includes a seal that can be used to establish the at least one opening The sealing material prevents or significantly restricts a material passage from the outside of the enclosure through the at least one sealed opening to the inside of the enclosure. 10 11. An electrochemical manufacturing method for generating a three-dimensional structure from a plurality of adhered thin layers, the manufacturing method comprising: (A) depositing at least a portion of a thin layer on a substrate, wherein the substrate The material may include previously deposited materials; and (B) forming a plurality of thin layers such that each continuous thin layer is formed adjacent to and adheres to a previously deposited thin layer; wherein the thin layers include at least two different materials And where the thin layers have a pattern comprising the following materials: (1) a required structural component that is protected and formed from at least one structural material; 20 (2) —a protective enclosure, at least part of which The part is formed of a structural material, wherein at least a part of the enclosure is at least partially surrounding the required structural component, and wherein the enclosure is restricted by at least one of the openings; (3) at least one blocking structure , Which is positioned along a line of sight and includes the required structural components around the 48 200422250, and wherein the enclosure is limited by at least one of the openings; and (3) —the sacrificial material, It is positioned at least partially between the structural component required for protection and at least 5 parts of the enclosure. 50 200422250 At least one opening but separated from the protective enclosure; and palpitations: the material can be sacrificed to become at least part of the structural components and at least a portion of the enclosure required to be located at least 5 Between; the order to remove at least a portion of the sacrificial material positioned between the required structural component and at least a portion of the enclosure after the thin layers are formed; and among the sacrificial material After the removal, the sealing material is deposited to strike the barrier material to inhibit the sealing material from entering the enclosure in large quantities. The fault is to continuously build the sealing material to seal the at least openings to prevent or significantly restrict one from the The outside of the enclosure passes through the at least-sealed opening to the material channel inside the enclosure. An electrochemical coating method 'for producing a three-dimensional structure from several adhered thin layers, the manufacturing method comprises: ： depositing-at least-part of the thin layer-on a substrate, wherein the substrate may include the previous Deposited materials; and ⑼ forming several thin layers' read that each continuous thin layer is formed adjacent to and adhered to a previously deposited thin layer; wherein the thin layers include at least two different materials, and wherein the thin layers With a pattern containing the following materials: ⑴-the required structural component, which is protected and formed from at least one structural material; (2)-a protective enclosure, which is at least partially formed of-material, where the At least a portion of the enclosure is at least partially enclosed by 49