TW200419628A - Dynamic flow pattern controller for uniformity control and the method thereof - Google Patents
Dynamic flow pattern controller for uniformity control and the method thereof Download PDFInfo
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200419628200419628
發明所屬之技術領域 本發明是有關於一種半導體設備及其控制方法,且特別是 有關於一種用於均勻度控制之動態流體圖案控制器及其控 制方法’可大幅地增進蝕刻機台之蝕刻均勻度。 先前技術 半導體產業快速與蓬勃的發展,當製程技術演進到深 次微f技術時,尤其是到了 90奈米以下時,需要使用極精 細的微影與蝕刻技術,方能製造出所需的積體電路。當積 體電路的電路密度增加,臨界尺寸(Critical Dimensi〇n、; CD)也必須愈來愈小,故製程的控制也更行困難。線寬尺寸 的控制由許多的參數所控制,如晶圓廠的設備,製程的方 法及原料等等均會影響對臨界尺寸的控制。其中,在微影 技術中,控制臨界尺寸的幾個重要部分包括掃瞄機、光= ,理系統、底材與量測技術等。而光阻處理系統對CD變化 量’主要影響因素為光阻厚度之均勻性和平均厚度之控 制,曝光後烘烤溫度之均勻性,塗佈與顯影後的時間延遲 以及顯影製程等,會對臨界尺寸的控制有很大的影響。 影ΐ影製程參數的控制對於臨界尺寸的控制有^ 傳統在進行微影與蝕刻製程時,首先在晶圓上塗佈一戶 幸接ί =曝光及顯影,在光阻層中形成所需:線 路圖案。以%瞄式電子顯微鏡(Scanning Electr〇nFIELD OF THE INVENTION The present invention relates to a semiconductor device and a control method thereof, and more particularly, to a dynamic fluid pattern controller and control method for uniformity control, which can greatly improve the etching uniformity of an etching machine. degree. In the past, the semiconductor industry developed rapidly and vigorously. When the process technology evolved to deep sub-f technology, especially below 90 nanometers, the use of extremely fine lithography and etching technology was required to produce the required product. Body circuit. As the circuit density of an integrated circuit increases, the critical dimension (Critical Dimension, CD) must also become smaller and smaller, so the control of the process becomes more difficult. The control of the line width size is controlled by many parameters, such as the fab equipment, process method and raw materials, etc. will affect the control of the critical size. Among them, in the lithography technology, several important parts for controlling the critical size include the scanner, the light, the physical system, the substrate and the measurement technology. The main influence factors of the photoresist processing system on the CD change are the uniformity of the photoresist thickness and the average thickness, the uniformity of the baking temperature after exposure, the time delay after coating and development, and the development process. The control of the critical dimension has a great influence. The control of the process parameters of the shadow film has the control of the critical size. Traditionally, when performing the lithography and etching process, firstly coating a wafer on the wafer for exposure and development to form the photoresist layer: Line pattern. Scanning Electron Microscope
Microscope ;SEM)進行臨界尺寸的量測,再以光學顯微鏡Microscope; SEM)
第7頁 200419628 五、發明說明⑵ " 一 (Optical Microscope ;0M)進行顯影後的檢查(After Develop Inspection ; ADI),藉以確認光罩上的圖案是否 完全地轉移至光阻上。然後進行蝕刻製程,以圖案化光阻 層為罩幕’钮刻底下的材料層,進行圖案轉移,接下來再 以SEM進行蝕刻後臨界尺寸的量測,以及用光學顯微鏡進行 蝕刻後的檢查(After Etch Inspection ;AEI)。 其中,ADI的CD值會直接影響到AEI的⑶值變化。由於微影 製程中,晶圓載入定位時,無可避免地會發生邊緣盥另一 邊緣(side-to-side)之不對稱性的問題,導致曝光過程中 發生失焦(defocus)的現象,因而影響⑶值,使得線 CD值的限制無法再繼續地縮小。 在蚀刻製程中,同樣地會發生邊緣與另一邊緣之不 影響AEI後的CD值。除此之外,在AEI後的檢測往 心與邊緣的蝕刻程度不同,造成蝕刻圖 案在曰曰囫中心與邊緣的CD值形成差異,造成中心至 (ce^er-t〇-edge)之差異性,這對於⑶值的縮小以及 度分佈造成很大的限制。 ^ 發明内容 口此本發月之目的就是在提供一種動態流體 ^的蝕刻結果㈣,提升CD值分佈的均勻度,避免中二 調整氣體分佈的流體圖荦,補償 、里/、丨、、Ό果, _系補彳貝被衫步驟時因為邊緣與另Page 7 200419628 V. Description of the invention 一 (Optical Microscope; 0M) Performs after development inspection (ADI) to confirm whether the pattern on the photomask is completely transferred to the photoresist. Then, an etching process is performed, and the patterned photoresist layer is used as the material layer underneath the mask to perform pattern transfer. Then, the critical dimension measurement after etching is performed by SEM, and the inspection after etching is performed with an optical microscope ( After Etch Inspection; AEI). Among them, the CD value of ADI will directly affect the change of the EI value of AEI. During the lithography process, when the wafer is loaded and positioned, the problem of asymmetry between the edge and the other edge (side-to-side) will inevitably occur, resulting in defocus during the exposure process. Therefore, the value of CD is affected, so that the limit of the line CD value cannot be further reduced. In the etching process, the same happens that the edge and the other edge do not affect the CD value after AEI. In addition, the degree of etching of the centripetal and the edges after the detection of the AEI is different, resulting in a difference in the CD value of the etching pattern between the center and the edge, and the difference between the center and (ce ^ er-t〇-edge). This reduces the reduction of the CU value and the degree distribution. ^ SUMMARY OF THE INVENTION The purpose of this month is to provide an etching result of a dynamic fluid ^, improve the uniformity of the CD value distribution, and avoid the second two to adjust the fluid map of the gas distribution. Fruits, _ is the step of repairing the quilt because the edges and other
200419628 五、發明說明(3) " " ' —----- 之不對稱性所造成的偏差,使CD值分佈達到高度的 本發明之另—目的在提供一種動態流體 中心與外圍氣體之喷出*,達到氣體均以控: 免晶圓外圍部分因為#刻氣體濃度不均 晶圓的中心。 夺蚁其CD值異於 體圖案控制器,控制 髀八佑…藉可以達到某-水平方向的氣 « 對稱性問題所造成嶋值分佈^均。、另邊緣之不 ^發明之又-目的在提供—種㈣圖案均句度之 法,fADI檢視之後,藉由前述之動態流體 工 配内建之流體圖案資料庫’控制蝕刻時徑向盘水制益搭 氣體分佈,來達到均句的钱刻效果 ㈣千^向之 蝕刻後的效果回饋至資料庫中,進仃A£I檢視,將 可以達到最佳化。4庫+藉从侧值均句度的控制 從一觀點,本發明提供一種動離户 制-蝕刻機台中之氣體分佈。:於控 =,一氣體分佈裝置以及一氣體排放控。置:=分 k體分離器用於將一氣體細分成複數道 。二, 置係連接於流體分離器,氣體分佛验、/氣孔體刀佈骏 體喷孔以及複數個周圍氣體噴孔,> 一具有複數個中心氣 流,而且中心氣體噴孔對準於晶圓:噴孔對應有-道氣200419628 V. Description of the invention (3) The deviation caused by the asymmetry of "-------" makes the CD value distribution to a high level. Another object of the present invention is to provide a dynamic fluid center and peripheral gas. Ejection *, to achieve the control of the gas: To avoid the unevenness of the gas concentration in the periphery of the wafer, the center of the wafer. The ant colony's CD value is different from that of the body pattern controller, which can control 髀 八 佑 ... by achieving a certain horizontal-level gas The other edge of the invention is not the same-the purpose is to provide-a method of pattern uniformity, after fADI inspection, the aforementioned dynamic fluid tool with the built-in fluid pattern database 'to control the radial water during etching The gas distribution system can be used to achieve the uniform effect of money engraving. The effect of the etching after a thousand directions is fed back to the database, and the A £ I view can be optimized. 4 library + control by borrowing the mean value of the side value From one aspect, the present invention provides a gas distribution in a mobile-to-house-etching machine. : Yu control =, a gas distribution device and a gas emission control. Set: = divided k-body separator is used to subdivide a gas into a plurality of channels. Second, the system is connected to the fluid separator, the gas separation test, the stomata body nozzle and the plurality of surrounding gas nozzles, > one has a plurality of central airflow, and the central gas nozzle is aligned with the crystal Circle: Nozzle corresponds to-channel air
第9頁Page 9
從另一 於一 I虫 之臨界 平角度 料庫, 動態流 本發明 控制方 微影製 值分佈 提高CD 本發明 ,此方 案,接 以晶圓 刻晶圓 控制器 述之動 以精準 邊緣與 如此不 的均勻 對應於前述 通道’控制 提供—種蝕 法至少包括 著根據臨界 之水平角度 之氣體分佈 ’來進行蝕 癌流體控制 地控制晶圓 另一邊緣之 僅可以將CD 度。 五、發明說明(4) 區塊,每一分隔區塊 分隔區塊具有一氣體 觀點, 刻機台 尺寸圖 。然後 決定蝕 體圖案 利用上 法,可 程中的 不均, 值分佈 之周圍氣體噴孔,且每一 通過分隔區塊之氣流。 刻晶圓之控制方法,應用 下列步驟。首先量測晶圓 尺寸圖案,決定晶圓之水 對應於一氣體分佈圖案資 比例,最後以此參數控制 刻步驟。 器’並且搭配蝕刻晶圓的 上的蝕刻效果,補償因為 不對稱性問題,所導致CD 值縮至最小,而且更可以 實施方式 供-種提高晶圓蝕刻圖案均勾度的操作方法,利 广體圖案控制器’達到徑向以及水平方向之氣體流 里控制,解決晶圓中心與邊緣蝕刻不均勻或是單一水平方 向傾斜所造成的蝕刻不均,藉此可以補償微影製程中不可 避免的邊緣與另一邊緣之不對稱性問題。 本發明為達到晶圓徑向以及 使用動態流體圖案控制器, 離器以及氣體排放控制裝置 佈資料庫,控制餘刻時氣體 水平方向之氣體分佈控制,特 利用氣體分佈裝置連接流體分 ’並且搭配内建的氣體圖案分 分佈圖案,來達到提升CD值分From another critical flat-angle material storehouse of a worm, the dynamic flow of the controller's lithographic production value distribution of the present invention improves the CD. This solution is based on the actions of the wafer engraving wafer controller to achieve precise edges and so on. The non-uniformity corresponds to the aforementioned channel 'control supply—the seed etching method includes at least the gas distribution according to the critical horizontal angle' to etch the fluid to control the other edge of the wafer to control the CD degree. V. Description of the invention (4) Blocks, each partition block has a gas perspective, and the size chart of the machine is carved. Then use the above method to determine the pattern of the etched body. The unevenness in the process, the value distribution of the surrounding gas nozzles, and each of the airflow passing through the partition block. For the control method of the engraved wafer, the following steps are applied. First, measure the size pattern of the wafer to determine the proportion of water in the wafer corresponding to a gas distribution pattern. Finally, use this parameter to control the engraving step. Device and the etching effect on the etched wafer to compensate for the CD value minimized due to the asymmetry problem, and it can also be implemented as a method for improving the uniformity of the wafer etching pattern. The volume pattern controller 'achieves radial and horizontal gas flow control to solve the uneven etching of the wafer center and edge or a single horizontal tilt, thereby compensating for the inevitable lithography process. The asymmetry between the edge and the other edge. In order to reach the radial direction of the wafer and use a dynamic fluid pattern controller, a separator, and a gas emission control device to distribute a database to control the gas distribution control in the horizontal direction of the gas at the rest of the time, the gas distribution device is used to connect the fluid distribution and match Built-in gas pattern distribution pattern to improve CD score
200419628 五、發明說明(5) 佈均勻度之目的。 請參照第1圖,其繪示本發明之蝕刻機台之結構剖面示意 圖。蝕刻機台1 0 0係為圓桶狀,其主要包括上電極板1 1 0以 , 及晶圓靜電基座(Electro - Static Chuck ;ESC)31〇,在兩 者之間形成電漿,對基座310上的半導體晶圓2 0 0,進行乾 ' 式蝕刻,而半導體晶圓200比如是矽晶圓等。在電極板11〇 上設置有轉移耦合電漿(Transform Coupled Plasma ;TCP) 線圈120,並且在電極板110中央設置有本發明之氣體分佈 裝置130,連接外在的氣體供應裝置,提供反應室内電漿形 成所需的反應氣體。參照的蝕刻機台1 〇 〇例如有Lam公司的 _ TCP 2300型機台,AMAT公司的DPS2型機台,以及Hitachi公 司的ECR型機台等。 在ESC 310周圍以及反應室外壁1〇2之間,設置有本發明之 氣體排放控制裝置3 2 0,以及用以過濾氣體雜質之篩網 - 33 0。在ESC 310底下設置有氣體流量控制閥340以及閘閥 350,用來控制反應室内整體氣體排出之速率。反應室内的 氣體由氣體分佈裝置130向下向外喷出,形成電漿並且與晶 圓表面形成反應,來進行蝕刻製程,反應後的氣體通過氣 體排放控制裝置3 2 0以及篩網3 3 0,由流量控制閥3 4 0與閘閥_ 350處抽出反應室外。此外,在ESC 31 0下設置溫度控制器 3 6 0,藉以調整晶圓2 〇 〇反應所需的溫度。 第2 A圖係繪示本發明之氣體分佈裝置之一較佳實施例。在 此實施例中,本發明之氣體分佈裝置1 3 0係為可調式氣體喷 嘴130a,所喷出的氣體係來自流體分離器4〇〇所提供的氣200419628 V. Description of the invention (5) Purpose of uniformity of cloth. Please refer to FIG. 1, which is a schematic cross-sectional view showing the structure of an etching machine according to the present invention. The etching machine 100 is in the shape of a barrel. It mainly includes an upper electrode plate 110 and an wafer electrostatic base (ESC) 31. A plasma is formed between the two. The semiconductor wafer 2000 on the base 310 is dry-etched, and the semiconductor wafer 200 is, for example, a silicon wafer. The electrode plate 110 is provided with a Transform Coupled Plasma (TCP) coil 120, and the center of the electrode plate 110 is provided with the gas distribution device 130 of the present invention, which is connected to an external gas supply device and provides electricity in the reaction chamber. The required reaction gas is formed by the slurry. The referenced etching machine 100 is, for example, a TCP 2300 machine from Lam, a DPS2 machine from AMAT, and an ECR machine from Hitachi. Around the ESC 310 and between the reaction chamber walls 102, there are provided the gas emission control device 3 2 0 of the present invention, and a screen-33 0 for filtering gas impurities. A gas flow control valve 340 and a gate valve 350 are provided under the ESC 310 to control the overall gas exhaust rate in the reaction chamber. The gas in the reaction chamber is ejected downward from the gas distribution device 130 to form a plasma and react with the wafer surface to perform the etching process. The reacted gas passes through the gas emission control device 3 2 0 and the screen 3 3 0 The reaction chamber is withdrawn from the flow control valve 3 4 0 and the gate valve _ 350. In addition, a temperature controller 360 is set under ESC 3100 to adjust the temperature required for the wafer 2000 reaction. FIG. 2A illustrates a preferred embodiment of the gas distribution device of the present invention. In this embodiment, the gas distribution device 130 of the present invention is an adjustable gas nozzle 130a, and the gas system ejected is from the gas provided by the fluid separator 400.
第11頁 200419628 五、發明說明(6) 一 體。在氣體喷嘴130a的底面142a,設置有複數個氣體喷孔 1 4 4a,比如是4個,係以環狀方式排列,主要用以提供晶圓 20 0中反應所需的氣體。在氣體喷嘴130a接近底部之側=設 置有複數個侧壁喷孔1 32a,比如是8個孔洞,係以環狀方式 均等地分設在側壁上。侧壁喷孔13 2a設計之數量係以晶圓" 均分之區塊數量來決定,因此也可以是12、16或是32等更 多之數量。 所供應的氣體在流體分離器400中被細分成數道小氣流 410,每一道氣流410經由氣體喷嘴i3〇a内的通道,分別對 應至氣體喷孔144a以及侧壁喷孔132a,因此達到每一個氣 體喷孔132a與144a之氣體喷出流量均為獨立控制。所以, 藉由本發明之氣體噴嘴130a可獨立控制每個方向角上的氣 體流量,使晶圓2 0 0邊緣各方向角上的氣體噴流均為各自獨 立。以8個侧壁喷孔132a為例,可將晶圓200區分為8個區 塊,且每個區塊相對應有一個侧壁喷孔丨32a,並且由此側 壁喷孔1 32a控制對應區塊的氣體流量。 第2 B圖係繪示本發明之氣體分佈裝置之一較佳實施例。在 此實施例中,本發明之氣體分佈裝置丨3〇係為氣體分佈平板 130b ’安裝在電極板11〇(如第1圖所示)的下方,所喷出的 氣體係來自流體分離器400所提供的氣體。在氣體分佈平板 130b的底面142b,其中心設置有複數個氣體喷孔1441),比 如是8個,係以對稱的方式排列,主要用以提供晶圓2 〇 〇中 反應所需的氣體。在氣體分佈平板130b底面142b之周圍設 置有複數個氣體喷孔1 32b,比如是8個孔洞,係以環狀方式Page 11 200419628 V. Description of Invention (6) On the bottom surface 142a of the gas nozzle 130a, a plurality of gas injection holes 1 4 4a, such as four, are arranged in a ring manner, and are mainly used to provide the gas required for the reaction in the wafer 200. On the side of the gas nozzle 130a near the bottom = there are a plurality of side wall nozzle holes 1 32a, for example, 8 holes, which are equally distributed on the side wall in a circular manner. The number of the side wall nozzle holes 13 2a is determined by the number of wafers " equally divided, so it can also be a larger number such as 12, 16, or 32. The supplied gas is subdivided into several small airflows 410 in the fluid separator 400. Each airflow 410 corresponds to the gas injection holes 144a and the side wall injection holes 132a through the channels in the gas nozzle i30a. The gas ejection flows of the gas injection holes 132a and 144a are independently controlled. Therefore, the gas nozzle 130a of the present invention can independently control the gas flow rate in each direction angle, so that the gas jets in each direction angle of the wafer 200 edge are independent. Taking 8 side wall spray holes 132a as an example, the wafer 200 can be divided into 8 blocks, and each block has a side wall spray hole 32a, and the corresponding area is controlled by the side wall spray holes 1 32a. Block gas flow. FIG. 2B illustrates a preferred embodiment of the gas distribution device of the present invention. In this embodiment, the gas distribution device of the present invention 30 is a gas distribution plate 130b 'installed below the electrode plate 110 (as shown in FIG. 1), and the gas system ejected comes from the fluid separator 400. The gas provided. On the bottom surface 142b of the gas distribution plate 130b, a plurality of gas injection holes 1441) are provided in the center, for example, eight are arranged in a symmetrical manner, and are mainly used to provide the gas required for the reaction in the wafer 2000. A plurality of gas injection holes 1 32b are arranged around the bottom surface 142b of the gas distribution plate 130b, for example, 8 holes, which are in a ring manner.
200419628 五、發明說明(7) 均等地分設在底面142b之周圍。氣體喷孔132b設計之數量 係以晶圓均分之區塊數量來決定,因此也可以是丨2、1 6或 是32等更多之數量。200419628 V. Description of the invention (7) It is equally distributed around the bottom surface 142b. The number of design of the gas injection holes 132b is determined by the number of blocks equally divided by the wafer, so it can also be a number such as 2, 16, or 32.
所供應的氣體在流體分離器4 0 0中被細分成數道小氣流 410,每一道氣流410經由氣體分佈平板i3〇b内的通道,分 別對應至中心的氣體喷孔144b以及周圍的氣體喷孔132b, 因此達到每一個氣體喷孔1 32b與1 44b之氣體喷出流量均為 獨立控制。所以,藉由本發明之氣體分佈平板丨3 〇b可獨立 控制每個方向角上的氣體流量,使晶圓2 〇 〇邊緣各方向角上 的氣體喷流均為各自獨立。以8個周圍的氣體喷孔丨32b為 例’可將晶圓2 0 0區分為8個區塊,且每個區塊相對應有一 個氣體喷孔1 32b,並且由此氣體噴孔1 32b控制對應區塊的 氣體流量。 除了氣體分佈裝置1 3 0之外,本發明亦對應地提供一氣體排 放控制裝置320,來控制每一區塊的的氣體流量。第3圖係 繪示本發明之氣體排放控制裝置之一較佳實施例的俯視結 構示意圖。請同時參照第1圖與第3圖,在此實施例中,本 發明之氣體排放控制裝置為一格狀扇板32〇a,格狀扇板32〇 設置在ESC 310之外緣,且位於ESC 31〇與外壁1〇2之間,係 為環狀之結構,一般由抗蝕性金屬或者是其他的抗蝕材料、 格狀扇板320a對應於氣體分佈裝置丨3〇上的側壁噴孔 132a(如㈣圖所示)或氣體喷孔U2b(如第2B圖所 分成數個通氣區塊322,例如是8個區塊。每一個通氣區塊The supplied gas is subdivided into several small airflows 410 in the fluid separator 400, and each airflow 410 passes through the channel in the gas distribution plate i30b, corresponding to the central gas injection hole 144b and the surrounding gas injection holes, respectively. 132b, so the gas ejection flow to each of the gas injection holes 1 32b and 1 44b is independently controlled. Therefore, with the gas distribution plate of the present invention, the gas flow in each direction angle can be controlled independently, so that the gas jets in each direction angle of the wafer 2000 edge are independent. Taking 8 surrounding gas nozzles 32b as an example, the wafer 200 can be divided into 8 blocks, and each block corresponds to a gas nozzle 1 32b, and thus the gas nozzle 1 32b Control the gas flow of the corresponding block. In addition to the gas distribution device 130, the present invention also provides a gas emission control device 320 correspondingly to control the gas flow rate of each block. Fig. 3 is a schematic plan view showing the structure of a preferred embodiment of the gas emission control device of the present invention. Please refer to FIG. 1 and FIG. 3 at the same time. In this embodiment, the gas emission control device of the present invention is a grid-shaped fan plate 32〇a, which is arranged on the outer edge of the ESC 310 and is located at The ESC 31 ° and the outer wall 102 are in a ring-shaped structure, generally made of anti-corrosive metal or other anti-corrosive materials. The grid-shaped fan plate 320a corresponds to the side wall spray holes on the gas distribution device. 30 132a (as shown in the figure) or gas nozzle U2b (as shown in Figure 2B, divided into several ventilation blocks 322, for example, 8 blocks. Each ventilation block
第13頁 200419628 五、發明說明(8) 322均為一通氣孔道,係用來控制該區塊的排氣流量,而 每一個通氣區塊322具有下檔板324與上檔板326,兩者^ 交錯排列,利用檔板324與326之間的間隙大小控制此區,塊 的排虱速率❶每一個區塊322均設置有一控制系統(未顯 不),比如是步進馬達,控制檔板3 24與326之相對位 此控制排氣通道的大小。 轉 依,,、、本發明之氣體排放控制裝置的另一較佳實施例, 排放控制裝置亦可為一閥門(Valve)控制裝 控制 =置在ESC3H)之外緣,且位於ESC31Q與外壁⑽之^裝 狀之結•’一•由抗蝕性金屬或者是其他的抗蝕材 : 成。閥門控制裝置對應於氣體分佈裝置1 3 0上的側壁 ,孔132a(如第2Α圖所示)或氣體噴孔132b(如第2Β圖所 不),細为成數個通氣區塊,例如是8個區塊。每一個通氣 為-通氣孔道’係用來控制該區塊的排氣流量,而 =-個通氣區塊係利用獨立操作的閥門來控制,利用閥 、開關大小控制此區塊的排氣速率。每一個區塊均設置 有-控制系統控制閥門,藉此控制排氣通道的大小。 f J明利用氣體分佈裝置13〇搭配氣體排放裝置32〇,可將 曰曰2 0 0刀成多個區塊,並且獨立控制每一個區塊的氣體流 置,解決微影製程中因為晶圓邊緣與另一邊緣之不對稱性 =成的CD值分佈不均。而且,藉由獨立控制氣體分佈裝 ΐ 中心(如第以圖中的氣體噴孔144a與第2B圖中的氣 士喷,144b)與周圍(如第2A圖中的側壁喷孔132&與第2B圖 的氣體喷孔1 32b)的嘴氣流量,並且調整兩者之間的比Page 13 200419628 V. Description of the invention (8) 322 are all vent holes, which are used to control the exhaust flow of the block, and each vent block 322 has a lower baffle 324 and an upper baffle 326, both ^ Staggered arrangement, use the gap between the baffle plates 324 and 326 to control this area, the block lice rate ❶ Each block 322 is equipped with a control system (not shown), such as a stepper motor to control the baffle plate 3 The relative position of 24 and 326 controls the size of the exhaust passage. In accordance with another preferred embodiment of the gas emission control device of the present invention, the emission control device can also be a valve (valve control device control = placed outside the ESC3H), and is located on the ESC31Q and the outer wall. ^ 装 状 结 • '一 • Made of anti-corrosive metal or other anti-corrosive materials: The valve control device corresponds to the side wall of the gas distribution device 130, the hole 132a (as shown in FIG. 2A) or the gas injection hole 132b (as shown in FIG. 2B), which is finely divided into several ventilation blocks, for example, 8 Blocks. Each ventilating channel is used to control the exhaust flow of the block, and =-venting blocks are controlled by independently operated valves. The valve and switch size are used to control the exhaust rate of this block. . Each block is equipped with a control valve to control the size of the exhaust passage. f J Ming uses a gas distribution device 13 and a gas discharge device 32, which can be divided into multiple blocks of 200, and the gas flow of each block is independently controlled to solve the problem of wafers in the lithography process. The asymmetry of the edge and the other edge = the uneven distribution of CD values. Moreover, by independently controlling the center of the gas distribution device (such as the gas injection holes 144a in the figure and the gas nozzle in the figure 2B, 144b) and the surroundings (such as the side wall nozzles 132 & and 2B in the figure 2A) The nozzle gas flow rate of the gas injection holes 1 32b) in the figure, and adjust the ratio between the two.
200419628200419628
例,可以避免晶圓中心與邊緣蝕刻不均勻 為了更清楚瞭解本發明之操作方法及1 i 、 之氣體分佈裝置與第3圖之氣體排放及㈣以 相互配合’以舉例說明其操作概要步驟置之兩個,施例 微影步驟之後,進行ADI檢視,並且以耳先ϋ里過 侧測裝置或者是SEM量測此時晶圓的以的光 驟510)。根據臨界尺寸圖案,仔細比尺寸圖案(步 勢,判斷装曰H1絲处 +人 、 又圖案不均勻之趨 $巧其aa圓傾斜之方向與角度(步驟5 案之内建資料庫53。’以及量測出之 ==For example, it is possible to avoid uneven etching of the wafer center and edge. In order to understand the operation method of the present invention and the gas distribution device of FIG. 1 and the gas discharge of FIG. For the two, after the lithography step of the example, ADI inspection is performed, and the side measurement device or the SEM is used to measure the light step 510 of the wafer at this time). According to the critical size pattern, carefully compare the size pattern (step, judge the tendency of the H1 wire + person, and the unevenness of the pattern, and the direction and angle of the aa circle tilt (the built-in database 53 in step 5). And measured ==
氣體喷嘴i3〇a中各個喷孔_132a的氣體V量以及: 狀扇板320a中每個區塊對庫的開 ^ fcb >f„! i;/ ^ ^ ^匕尾對應的開口大小,來控制氣體的分 5:Γ =:!案(步驟54°)。然後進行㈣步驟(步驟 視的任昊π二二之後,進仃ΑΕΙ檢視(步驟56〇),並且將檢 : = 到資料庫53〇,作比較分析, 3〇The gas V amount of each nozzle hole _132a in the gas nozzle i3〇a and: the opening of each block to the library in the fan plate 320a ^ fcb > f „! I; / ^ ^ ^ The opening size corresponding to the dagger To control the gas's point 5: Γ = :! case (step 54 °). Then proceed to the step (after Ren Hao π 22 of the step, enter the 仃 ΑΕΙ view (step 56)), and check: = to the data Library 53 °, for comparative analysis, 3 °
内的各個參數值。 SThe value of each parameter within. S
^批⑹二,本發明提供一種用於均勻度控制之動態流體圖 二命态及其控制方法,可以解決微影製程中不可避免的 生丨Ik二另邊緣之不對稱性之問題。藉由在餘刻製程中控 :::刻氣體的流體圖案’精準補償邊緣與另—邊緣之不對 1所造成的均勻度降低’使蝕刻後的晶圓,可以獲得微 小的CD值以及高度的CD值均勻度。 =2 t發明已以-較佳實施例揭露如Ji,然其並非用以限 ^ ^明各任何熟習此技藝者,在不脫離本發明之精神和 乾圍内’當可作各種之更動與潤飾,因此本發明之保護範^ Batch two, the present invention provides a dynamic fluid map dual life state and control method for uniformity control, which can solve the problem of asymmetry of the other edges inevitably generated in the lithography process. By controlling the fluid pattern of the ::: engraved gas in the remaining process, 'accurately compensate for the decrease in uniformity caused by the edge-to-edge mismatch 1', the wafer after etching can obtain a small CD value and a high degree of CD value uniformity. = 2 tThe invention has been disclosed in a preferred embodiment, such as Ji, but it is not intended to limit ^ ^ Anyone skilled in this art can make various changes and modifications without departing from the spirit and scope of the present invention. Retouching, so the protection scope of the present invention
200419628 五、發明說明(ίο) 圍當視後附之申請專利範圍所界定者為準 第16頁 200419628 圖式簡單說明200419628 V. Description of Invention (ίο) The definition of the scope of the patent application attached to the application shall prevail. Page 16 200419628 Schematic illustration
圖式簡單說明 為讓本發明之上 懂,下文特舉一 明如下: 述和其他目的、特徵、和優點能更明顯易 較佳實施例,並配合所附圖式,作詳細說 示本發明之姓刻機台之結構剖面示意圖。 示本發明之氣體分佈裝置之-較佳實施例的結 構刮面不意圖。 只 發明之氣艘分佈裝置之另-較值實施例的 發明之氣㈣放㈣^之-較佳實施例的 第4圖是繪示本發明之流體圖案控制器之操作流程圖。 圖式之標記說明 1〇〇 餘刻機台 反應室外壁 no 電極板 120 線圈 130 氣體分佈裝置 130a 氣體喷嘴 13 0b 氣體分佈平板 13 2a 側壁喷孔 132b 氣體噴孔 142a 底部BRIEF DESCRIPTION OF THE DRAWINGS In order to make the present invention understandable, the following is given as follows: The description and other objects, features, and advantages can be more clearly and easily implemented in the preferred embodiment, and the present invention will be described in detail with the accompanying drawings. The structural cross-section of the machine carved by the surname. The structure scraping surface showing the preferred embodiment of the gas distribution device of the present invention is not intended. Only another embodiment of the invention of the invention of the gas ship distribution device-the invention of the invention of the invention-the fourth embodiment of the invention-Figure 4 is a flow chart showing the operation of the fluid pattern controller of the present invention. Explanation of the marks in the drawing 100 Hours of time Machine reaction outside wall no Electrode plate 120 Coil 130 Gas distribution device 130a Gas nozzle 13 0b Gas distribution plate 13 2a Side wall injection hole 132b Gas injection hole 142a Bottom
第17頁 200419628 圖式簡單說明 142b 底面 144a 氣體喷孔 144b 氣體喷孔 200 晶圓 310 靜電基座 320 氣體排放控制裝置 320a 格狀扇板 322 區塊 324 下檔板 326 上樓板 330 網狀篩網 340 流體控制閥 350 閘閥 360 溫度控制裝置 400 流體分離器 410 氣流 510〜 560 步驟Page 17 200419628 Brief description of the drawing 142b Bottom surface 144a Gas nozzle 144b Gas nozzle 200 Wafer 310 Static base 320 Gas emission control device 320a Grid fan 322 Block 324 Lower baffle 326 Upper floor 330 Mesh screen 340 fluid control valve 350 gate valve 360 temperature control device 400 fluid separator 410 air flow 510 ~ 560 steps
第18頁Page 18
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US9316917B2 (en) | 2007-07-18 | 2016-04-19 | Nikon Corporation | Measuring method, stage apparatus, and exposure apparatus |
US9372410B2 (en) | 2007-07-18 | 2016-06-21 | Nikon Corporation | Measuring method, stage apparatus, and exposure apparatus |
US9804506B2 (en) | 2007-07-18 | 2017-10-31 | Nikon Corporation | Measuring method, stage apparatus, and exposure apparatus |
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