TW200419628A

TW200419628A - Dynamic flow pattern controller for uniformity control and the method thereof

Info

Publication number: TW200419628A
Application number: TW92105832A
Authority: TW
Inventors: Li-Te S Lin; Yu-I Wang; Ming-Ching Chang; Li-Shung Chen; Huan-Just Lin; Yuan Hung Chiu; Hun Jan Tao
Original assignee: Taiwan Semiconductor Mfg
Priority date: 2003-03-17
Filing date: 2003-03-17
Publication date: 2004-10-01
Also published as: TW586139B

Abstract

A dynamic flow pattern controller for uniformity control and the method thereof is described. A gas distribution apparatus with gas injection holes is connected to a flow divider. The flow of each gas injection holes is adjusted by the flow divider to control the gas flow pattern. A gas exhausting control apparatus and a flow control valve are correspondingly used to adjust the contribution and speed when the gas arrive the surface of wafer, so that high uniformity can be obtained to be free of side-to-side problem.

Description

200419628200419628

發明所屬之技術領域本發明是有關於一種半導體設備及其控制方法，且特別是有關於一種用於均勻度控制之動態流體圖案控制器及其控制方法’可大幅地增進蝕刻機台之蝕刻均勻度。先前技術半導體產業快速與蓬勃的發展，當製程技術演進到深次微f技術時，尤其是到了 90奈米以下時，需要使用極精細的微影與蝕刻技術，方能製造出所需的積體電路。當積體電路的電路密度增加，臨界尺寸（Critical Dimensi〇n、； CD)也必須愈來愈小，故製程的控制也更行困難。線寬尺寸的控制由許多的參數所控制，如晶圓廠的設備，製程的方法及原料等等均會影響對臨界尺寸的控制。其中，在微影技術中，控制臨界尺寸的幾個重要部分包括掃瞄機、光= ，理系統、底材與量測技術等。而光阻處理系統對CD變化量’主要影響因素為光阻厚度之均勻性和平均厚度之控制，曝光後烘烤溫度之均勻性，塗佈與顯影後的時間延遲以及顯影製程等，會對臨界尺寸的控制有很大的影響。影ΐ影製程參數的控制對於臨界尺寸的控制有^ 傳統在進行微影與蝕刻製程時，首先在晶圓上塗佈一戶幸接ί =曝光及顯影，在光阻層中形成所需：線路圖案。以％瞄式電子顯微鏡（Scanning Electr〇nFIELD OF THE INVENTION The present invention relates to a semiconductor device and a control method thereof, and more particularly, to a dynamic fluid pattern controller and control method for uniformity control, which can greatly improve the etching uniformity of an etching machine. degree. In the past, the semiconductor industry developed rapidly and vigorously. When the process technology evolved to deep sub-f technology, especially below 90 nanometers, the use of extremely fine lithography and etching technology was required to produce the required product. Body circuit. As the circuit density of an integrated circuit increases, the critical dimension (Critical Dimension, CD) must also become smaller and smaller, so the control of the process becomes more difficult. The control of the line width size is controlled by many parameters, such as the fab equipment, process method and raw materials, etc. will affect the control of the critical size. Among them, in the lithography technology, several important parts for controlling the critical size include the scanner, the light, the physical system, the substrate and the measurement technology. The main influence factors of the photoresist processing system on the CD change are the uniformity of the photoresist thickness and the average thickness, the uniformity of the baking temperature after exposure, the time delay after coating and development, and the development process. The control of the critical dimension has a great influence. The control of the process parameters of the shadow film has the control of the critical size. Traditionally, when performing the lithography and etching process, firstly coating a wafer on the wafer for exposure and development to form the photoresist layer: Line pattern. Scanning Electron Microscope

Microscope ;SEM)進行臨界尺寸的量測，再以光學顯微鏡Microscope; SEM)

第7頁 200419628 五、發明說明⑵ " 一 (Optical Microscope ;0M)進行顯影後的檢查（After Develop Inspection ; ADI)，藉以確認光罩上的圖案是否完全地轉移至光阻上。然後進行蝕刻製程，以圖案化光阻層為罩幕’钮刻底下的材料層，進行圖案轉移，接下來再以SEM進行蝕刻後臨界尺寸的量測，以及用光學顯微鏡進行蝕刻後的檢查（After Etch Inspection ;AEI)。其中，ADI的CD值會直接影響到AEI的⑶值變化。由於微影製程中，晶圓載入定位時，無可避免地會發生邊緣盥另一邊緣（side-to-side)之不對稱性的問題，導致曝光過程中發生失焦（defocus)的現象，因而影響⑶值，使得線 CD值的限制無法再繼續地縮小。在蚀刻製程中，同樣地會發生邊緣與另一邊緣之不影響AEI後的CD值。除此之外，在AEI後的檢測往心與邊緣的蝕刻程度不同，造成蝕刻圖案在曰曰囫中心與邊緣的CD值形成差異，造成中心至 (ce^er-t〇-edge)之差異性，這對於⑶值的縮小以及度分佈造成很大的限制。 ^ 發明内容口此本發月之目的就是在提供一種動態流體 ^的蝕刻結果㈣，提升CD值分佈的均勻度，避免中二調整氣體分佈的流體圖荦，補償、里/、丨、、Ό果， _系補彳貝被衫步驟時因為邊緣與另Page 7 200419628 V. Description of the invention 一 (Optical Microscope; 0M) Performs after development inspection (ADI) to confirm whether the pattern on the photomask is completely transferred to the photoresist. Then, an etching process is performed, and the patterned photoresist layer is used as the material layer underneath the mask to perform pattern transfer. Then, the critical dimension measurement after etching is performed by SEM, and the inspection after etching is performed with an optical microscope ( After Etch Inspection; AEI). Among them, the CD value of ADI will directly affect the change of the EI value of AEI. During the lithography process, when the wafer is loaded and positioned, the problem of asymmetry between the edge and the other edge (side-to-side) will inevitably occur, resulting in defocus during the exposure process. Therefore, the value of CD is affected, so that the limit of the line CD value cannot be further reduced. In the etching process, the same happens that the edge and the other edge do not affect the CD value after AEI. In addition, the degree of etching of the centripetal and the edges after the detection of the AEI is different, resulting in a difference in the CD value of the etching pattern between the center and the edge, and the difference between the center and (ce ^ er-t〇-edge). This reduces the reduction of the CU value and the degree distribution. ^ SUMMARY OF THE INVENTION The purpose of this month is to provide an etching result of a dynamic fluid ^, improve the uniformity of the CD value distribution, and avoid the second two to adjust the fluid map of the gas distribution. Fruits, _ is the step of repairing the quilt because the edges and other

200419628 五、發明說明（3) " " ' —----- 之不對稱性所造成的偏差，使CD值分佈達到高度的本發明之另—目的在提供一種動態流體中心與外圍氣體之喷出*，達到氣體均以控：免晶圓外圍部分因為#刻氣體濃度不均晶圓的中心。夺蚁其CD值異於體圖案控制器，控制髀八佑…藉可以達到某-水平方向的氣 « 對稱性問題所造成嶋值分佈^均。、另邊緣之不 ^發明之又-目的在提供—種㈣圖案均句度之法，fADI檢視之後，藉由前述之動態流體工配内建之流體圖案資料庫’控制蝕刻時徑向盘水制益搭氣體分佈，來達到均句的钱刻效果㈣千^向之蝕刻後的效果回饋至資料庫中，進仃A£I檢視，將可以達到最佳化。4庫+藉从侧值均句度的控制從一觀點，本發明提供一種動離户制-蝕刻機台中之氣體分佈。：於控 =，一氣體分佈裝置以及一氣體排放控。置：=分 k體分離器用於將一氣體細分成複數道。二，置係連接於流體分離器，氣體分佛验、/氣孔體刀佈骏體喷孔以及複數個周圍氣體噴孔，> 一具有複數個中心氣流，而且中心氣體噴孔對準於晶圓：噴孔對應有-道氣200419628 V. Description of the invention (3) The deviation caused by the asymmetry of "-------" makes the CD value distribution to a high level. Another object of the present invention is to provide a dynamic fluid center and peripheral gas. Ejection *, to achieve the control of the gas: To avoid the unevenness of the gas concentration in the periphery of the wafer, the center of the wafer. The ant colony's CD value is different from that of the body pattern controller, which can control 髀八佑 ... by achieving a certain horizontal-level gas The other edge of the invention is not the same-the purpose is to provide-a method of pattern uniformity, after fADI inspection, the aforementioned dynamic fluid tool with the built-in fluid pattern database 'to control the radial water during etching The gas distribution system can be used to achieve the uniform effect of money engraving. The effect of the etching after a thousand directions is fed back to the database, and the A £ I view can be optimized. 4 library + control by borrowing the mean value of the side value From one aspect, the present invention provides a gas distribution in a mobile-to-house-etching machine. : Yu control =, a gas distribution device and a gas emission control. Set: = divided k-body separator is used to subdivide a gas into a plurality of channels. Second, the system is connected to the fluid separator, the gas separation test, the stomata body nozzle and the plurality of surrounding gas nozzles, > one has a plurality of central airflow, and the central gas nozzle is aligned with the crystal Circle: Nozzle corresponds to-channel air

第9頁Page 9

從另一於一 I虫之臨界平角度料庫，動態流本發明控制方微影製值分佈提高CD 本發明，此方案，接以晶圓刻晶圓控制器述之動以精準邊緣與如此不的均勻對應於前述通道’控制提供—種蝕法至少包括著根據臨界之水平角度之氣體分佈 ’來進行蝕癌流體控制地控制晶圓另一邊緣之僅可以將CD 度。五、發明說明（4) 區塊，每一分隔區塊分隔區塊具有一氣體觀點，刻機台尺寸圖。然後決定蝕體圖案利用上法，可程中的不均，值分佈之周圍氣體噴孔，且每一通過分隔區塊之氣流。刻晶圓之控制方法，應用下列步驟。首先量測晶圓尺寸圖案，決定晶圓之水對應於一氣體分佈圖案資比例，最後以此參數控制刻步驟。器’並且搭配蝕刻晶圓的上的蝕刻效果，補償因為不對稱性問題，所導致CD 值縮至最小，而且更可以實施方式供-種提高晶圓蝕刻圖案均勾度的操作方法，利广體圖案控制器’達到徑向以及水平方向之氣體流里控制，解決晶圓中心與邊緣蝕刻不均勻或是單一水平方向傾斜所造成的蝕刻不均，藉此可以補償微影製程中不可避免的邊緣與另一邊緣之不對稱性問題。本發明為達到晶圓徑向以及使用動態流體圖案控制器，離器以及氣體排放控制裝置佈資料庫，控制餘刻時氣體水平方向之氣體分佈控制，特利用氣體分佈裝置連接流體分 ’並且搭配内建的氣體圖案分分佈圖案，來達到提升CD值分From another critical flat-angle material storehouse of a worm, the dynamic flow of the controller's lithographic production value distribution of the present invention improves the CD. This solution is based on the actions of the wafer engraving wafer controller to achieve precise edges and so on. The non-uniformity corresponds to the aforementioned channel 'control supply—the seed etching method includes at least the gas distribution according to the critical horizontal angle' to etch the fluid to control the other edge of the wafer to control the CD degree. V. Description of the invention (4) Blocks, each partition block has a gas perspective, and the size chart of the machine is carved. Then use the above method to determine the pattern of the etched body. The unevenness in the process, the value distribution of the surrounding gas nozzles, and each of the airflow passing through the partition block. For the control method of the engraved wafer, the following steps are applied. First, measure the size pattern of the wafer to determine the proportion of water in the wafer corresponding to a gas distribution pattern. Finally, use this parameter to control the engraving step. Device and the etching effect on the etched wafer to compensate for the CD value minimized due to the asymmetry problem, and it can also be implemented as a method for improving the uniformity of the wafer etching pattern. The volume pattern controller 'achieves radial and horizontal gas flow control to solve the uneven etching of the wafer center and edge or a single horizontal tilt, thereby compensating for the inevitable lithography process. The asymmetry between the edge and the other edge. In order to reach the radial direction of the wafer and use a dynamic fluid pattern controller, a separator, and a gas emission control device to distribute a database to control the gas distribution control in the horizontal direction of the gas at the rest of the time, the gas distribution device is used to connect the fluid distribution and match Built-in gas pattern distribution pattern to improve CD score

200419628 五、發明說明（5) 佈均勻度之目的。請參照第1圖，其繪示本發明之蝕刻機台之結構剖面示意圖。蝕刻機台1 0 0係為圓桶狀，其主要包括上電極板1 1 0以，及晶圓靜電基座（Electro - Static Chuck ;ESC)31〇，在兩者之間形成電漿，對基座310上的半導體晶圓2 0 0，進行乾 ' 式蝕刻，而半導體晶圓200比如是矽晶圓等。在電極板11〇上設置有轉移耦合電漿（Transform Coupled Plasma ;TCP) 線圈120，並且在電極板110中央設置有本發明之氣體分佈裝置130，連接外在的氣體供應裝置，提供反應室内電漿形成所需的反應氣體。參照的蝕刻機台1 〇〇例如有Lam公司的 _ TCP 2300型機台，AMAT公司的DPS2型機台，以及Hitachi公司的ECR型機台等。在ESC 310周圍以及反應室外壁1〇2之間，設置有本發明之氣體排放控制裝置3 2 0，以及用以過濾氣體雜質之篩網 - 33 0。在ESC 310底下設置有氣體流量控制閥340以及閘閥 350，用來控制反應室内整體氣體排出之速率。反應室内的氣體由氣體分佈裝置130向下向外喷出，形成電漿並且與晶圓表面形成反應，來進行蝕刻製程，反應後的氣體通過氣體排放控制裝置3 2 0以及篩網3 3 0，由流量控制閥3 4 0與閘閥_ 350處抽出反應室外。此外，在ESC 31 0下設置溫度控制器 3 6 0，藉以調整晶圓2 〇〇反應所需的溫度。第2 A圖係繪示本發明之氣體分佈裝置之一較佳實施例。在此實施例中，本發明之氣體分佈裝置1 3 0係為可調式氣體喷嘴130a，所喷出的氣體係來自流體分離器4〇〇所提供的氣200419628 V. Description of the invention (5) Purpose of uniformity of cloth. Please refer to FIG. 1, which is a schematic cross-sectional view showing the structure of an etching machine according to the present invention. The etching machine 100 is in the shape of a barrel. It mainly includes an upper electrode plate 110 and an wafer electrostatic base (ESC) 31. A plasma is formed between the two. The semiconductor wafer 2000 on the base 310 is dry-etched, and the semiconductor wafer 200 is, for example, a silicon wafer. The electrode plate 110 is provided with a Transform Coupled Plasma (TCP) coil 120, and the center of the electrode plate 110 is provided with the gas distribution device 130 of the present invention, which is connected to an external gas supply device and provides electricity in the reaction chamber. The required reaction gas is formed by the slurry. The referenced etching machine 100 is, for example, a TCP 2300 machine from Lam, a DPS2 machine from AMAT, and an ECR machine from Hitachi. Around the ESC 310 and between the reaction chamber walls 102, there are provided the gas emission control device 3 2 0 of the present invention, and a screen-33 0 for filtering gas impurities. A gas flow control valve 340 and a gate valve 350 are provided under the ESC 310 to control the overall gas exhaust rate in the reaction chamber. The gas in the reaction chamber is ejected downward from the gas distribution device 130 to form a plasma and react with the wafer surface to perform the etching process. The reacted gas passes through the gas emission control device 3 2 0 and the screen 3 3 0 The reaction chamber is withdrawn from the flow control valve 3 4 0 and the gate valve _ 350. In addition, a temperature controller 360 is set under ESC 3100 to adjust the temperature required for the wafer 2000 reaction. FIG. 2A illustrates a preferred embodiment of the gas distribution device of the present invention. In this embodiment, the gas distribution device 130 of the present invention is an adjustable gas nozzle 130a, and the gas system ejected is from the gas provided by the fluid separator 400.

第11頁 200419628 五、發明說明（6) 一體。在氣體喷嘴130a的底面142a，設置有複數個氣體喷孔 1 4 4a，比如是4個，係以環狀方式排列，主要用以提供晶圓 20 0中反應所需的氣體。在氣體喷嘴130a接近底部之側=設置有複數個侧壁喷孔1 32a，比如是8個孔洞，係以環狀方式均等地分設在側壁上。侧壁喷孔13 2a設計之數量係以晶圓" 均分之區塊數量來決定，因此也可以是12、16或是32等更多之數量。所供應的氣體在流體分離器400中被細分成數道小氣流 410，每一道氣流410經由氣體喷嘴i3〇a内的通道，分別對應至氣體喷孔144a以及侧壁喷孔132a，因此達到每一個氣體喷孔132a與144a之氣體喷出流量均為獨立控制。所以，藉由本發明之氣體噴嘴130a可獨立控制每個方向角上的氣體流量，使晶圓2 0 0邊緣各方向角上的氣體噴流均為各自獨立。以8個侧壁喷孔132a為例，可將晶圓200區分為8個區塊，且每個區塊相對應有一個侧壁喷孔丨32a，並且由此側壁喷孔1 32a控制對應區塊的氣體流量。第2 B圖係繪示本發明之氣體分佈裝置之一較佳實施例。在此實施例中，本發明之氣體分佈裝置丨3〇係為氣體分佈平板 130b ’安裝在電極板11〇(如第1圖所示）的下方，所喷出的氣體係來自流體分離器400所提供的氣體。在氣體分佈平板 130b的底面142b，其中心設置有複數個氣體喷孔1441)，比如是8個，係以對稱的方式排列，主要用以提供晶圓2 〇〇中反應所需的氣體。在氣體分佈平板130b底面142b之周圍設置有複數個氣體喷孔1 32b，比如是8個孔洞，係以環狀方式Page 11 200419628 V. Description of Invention (6) On the bottom surface 142a of the gas nozzle 130a, a plurality of gas injection holes 1 4 4a, such as four, are arranged in a ring manner, and are mainly used to provide the gas required for the reaction in the wafer 200. On the side of the gas nozzle 130a near the bottom = there are a plurality of side wall nozzle holes 1 32a, for example, 8 holes, which are equally distributed on the side wall in a circular manner. The number of the side wall nozzle holes 13 2a is determined by the number of wafers " equally divided, so it can also be a larger number such as 12, 16, or 32. The supplied gas is subdivided into several small airflows 410 in the fluid separator 400. Each airflow 410 corresponds to the gas injection holes 144a and the side wall injection holes 132a through the channels in the gas nozzle i30a. The gas ejection flows of the gas injection holes 132a and 144a are independently controlled. Therefore, the gas nozzle 130a of the present invention can independently control the gas flow rate in each direction angle, so that the gas jets in each direction angle of the wafer 200 edge are independent. Taking 8 side wall spray holes 132a as an example, the wafer 200 can be divided into 8 blocks, and each block has a side wall spray hole 32a, and the corresponding area is controlled by the side wall spray holes 1 32a. Block gas flow. FIG. 2B illustrates a preferred embodiment of the gas distribution device of the present invention. In this embodiment, the gas distribution device of the present invention 30 is a gas distribution plate 130b 'installed below the electrode plate 110 (as shown in FIG. 1), and the gas system ejected comes from the fluid separator 400. The gas provided. On the bottom surface 142b of the gas distribution plate 130b, a plurality of gas injection holes 1441) are provided in the center, for example, eight are arranged in a symmetrical manner, and are mainly used to provide the gas required for the reaction in the wafer 2000. A plurality of gas injection holes 1 32b are arranged around the bottom surface 142b of the gas distribution plate 130b, for example, 8 holes, which are in a ring manner.

200419628 五、發明說明（7) 均等地分設在底面142b之周圍。氣體喷孔132b設計之數量係以晶圓均分之區塊數量來決定，因此也可以是丨2、1 6或是32等更多之數量。200419628 V. Description of the invention (7) It is equally distributed around the bottom surface 142b. The number of design of the gas injection holes 132b is determined by the number of blocks equally divided by the wafer, so it can also be a number such as 2, 16, or 32.

所供應的氣體在流體分離器4 0 0中被細分成數道小氣流 410，每一道氣流410經由氣體分佈平板i3〇b内的通道，分別對應至中心的氣體喷孔144b以及周圍的氣體喷孔132b，因此達到每一個氣體喷孔1 32b與1 44b之氣體喷出流量均為獨立控制。所以，藉由本發明之氣體分佈平板丨3 〇b可獨立控制每個方向角上的氣體流量，使晶圓2 〇〇邊緣各方向角上的氣體喷流均為各自獨立。以8個周圍的氣體喷孔丨32b為例’可將晶圓2 0 0區分為8個區塊，且每個區塊相對應有一個氣體喷孔1 32b，並且由此氣體噴孔1 32b控制對應區塊的氣體流量。除了氣體分佈裝置1 3 0之外，本發明亦對應地提供一氣體排放控制裝置320，來控制每一區塊的的氣體流量。第3圖係繪示本發明之氣體排放控制裝置之一較佳實施例的俯視結構示意圖。請同時參照第1圖與第3圖，在此實施例中，本發明之氣體排放控制裝置為一格狀扇板32〇a，格狀扇板32〇設置在ESC 310之外緣，且位於ESC 31〇與外壁1〇2之間，係為環狀之結構，一般由抗蝕性金屬或者是其他的抗蝕材料、格狀扇板320a對應於氣體分佈裝置丨3〇上的側壁噴孔 132a(如㈣圖所示）或氣體喷孔U2b(如第2B圖所分成數個通氣區塊322，例如是8個區塊。每一個通氣區塊The supplied gas is subdivided into several small airflows 410 in the fluid separator 400, and each airflow 410 passes through the channel in the gas distribution plate i30b, corresponding to the central gas injection hole 144b and the surrounding gas injection holes, respectively. 132b, so the gas ejection flow to each of the gas injection holes 1 32b and 1 44b is independently controlled. Therefore, with the gas distribution plate of the present invention, the gas flow in each direction angle can be controlled independently, so that the gas jets in each direction angle of the wafer 2000 edge are independent. Taking 8 surrounding gas nozzles 32b as an example, the wafer 200 can be divided into 8 blocks, and each block corresponds to a gas nozzle 1 32b, and thus the gas nozzle 1 32b Control the gas flow of the corresponding block. In addition to the gas distribution device 130, the present invention also provides a gas emission control device 320 correspondingly to control the gas flow rate of each block. Fig. 3 is a schematic plan view showing the structure of a preferred embodiment of the gas emission control device of the present invention. Please refer to FIG. 1 and FIG. 3 at the same time. In this embodiment, the gas emission control device of the present invention is a grid-shaped fan plate 32〇a, which is arranged on the outer edge of the ESC 310 and is located at The ESC 31 ° and the outer wall 102 are in a ring-shaped structure, generally made of anti-corrosive metal or other anti-corrosive materials. The grid-shaped fan plate 320a corresponds to the side wall spray holes on the gas distribution device. 30 132a (as shown in the figure) or gas nozzle U2b (as shown in Figure 2B, divided into several ventilation blocks 322, for example, 8 blocks. Each ventilation block

第13頁 200419628 五、發明說明（8) 322均為一通氣孔道，係用來控制該區塊的排氣流量，而每一個通氣區塊322具有下檔板324與上檔板326，兩者^ 交錯排列，利用檔板324與326之間的間隙大小控制此區，塊的排虱速率❶每一個區塊322均設置有一控制系統（未顯不），比如是步進馬達，控制檔板3 24與326之相對位此控制排氣通道的大小。轉依，，、、本發明之氣體排放控制裝置的另一較佳實施例，排放控制裝置亦可為一閥門（Valve)控制裝控制 =置在ESC3H)之外緣，且位於ESC31Q與外壁⑽之^裝狀之結•’一•由抗蝕性金屬或者是其他的抗蝕材 : 成。閥門控制裝置對應於氣體分佈裝置1 3 0上的側壁，孔132a(如第2Α圖所示）或氣體噴孔132b(如第2Β圖所不），細为成數個通氣區塊，例如是8個區塊。每一個通氣為-通氣孔道’係用來控制該區塊的排氣流量，而 =-個通氣區塊係利用獨立操作的閥門來控制，利用閥、開關大小控制此區塊的排氣速率。每一個區塊均設置有-控制系統控制閥門，藉此控制排氣通道的大小。 f J明利用氣體分佈裝置13〇搭配氣體排放裝置32〇，可將曰曰2 0 0刀成多個區塊，並且獨立控制每一個區塊的氣體流置，解決微影製程中因為晶圓邊緣與另一邊緣之不對稱性 =成的CD值分佈不均。而且，藉由獨立控制氣體分佈裝 ΐ 中心（如第以圖中的氣體噴孔144a與第2B圖中的氣士喷，144b)與周圍（如第2A圖中的側壁喷孔132&與第2B圖的氣體喷孔1 32b)的嘴氣流量，並且調整兩者之間的比Page 13 200419628 V. Description of the invention (8) 322 are all vent holes, which are used to control the exhaust flow of the block, and each vent block 322 has a lower baffle 324 and an upper baffle 326, both ^ Staggered arrangement, use the gap between the baffle plates 324 and 326 to control this area, the block lice rate ❶ Each block 322 is equipped with a control system (not shown), such as a stepper motor to control the baffle plate 3 The relative position of 24 and 326 controls the size of the exhaust passage. In accordance with another preferred embodiment of the gas emission control device of the present invention, the emission control device can also be a valve (valve control device control = placed outside the ESC3H), and is located on the ESC31Q and the outer wall. ^ 装状结 • '一 • Made of anti-corrosive metal or other anti-corrosive materials: The valve control device corresponds to the side wall of the gas distribution device 130, the hole 132a (as shown in FIG. 2A) or the gas injection hole 132b (as shown in FIG. 2B), which is finely divided into several ventilation blocks, for example, 8 Blocks. Each ventilating channel is used to control the exhaust flow of the block, and =-venting blocks are controlled by independently operated valves. The valve and switch size are used to control the exhaust rate of this block. . Each block is equipped with a control valve to control the size of the exhaust passage. f J Ming uses a gas distribution device 13 and a gas discharge device 32, which can be divided into multiple blocks of 200, and the gas flow of each block is independently controlled to solve the problem of wafers in the lithography process. The asymmetry of the edge and the other edge = the uneven distribution of CD values. Moreover, by independently controlling the center of the gas distribution device (such as the gas injection holes 144a in the figure and the gas nozzle in the figure 2B, 144b) and the surroundings (such as the side wall nozzles 132 & and 2B in the figure 2A) The nozzle gas flow rate of the gas injection holes 1 32b) in the figure, and adjust the ratio between the two.

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例，可以避免晶圓中心與邊緣蝕刻不均勻為了更清楚瞭解本發明之操作方法及1 i 、之氣體分佈裝置與第3圖之氣體排放及㈣以相互配合’以舉例說明其操作概要步驟置之兩個，施例微影步驟之後，進行ADI檢視，並且以耳先ϋ里過侧測裝置或者是SEM量測此時晶圓的以的光驟510)。根據臨界尺寸圖案，仔細比尺寸圖案（步勢，判斷装曰H1絲处 +人、又圖案不均勻之趨 $巧其aa圓傾斜之方向與角度（步驟5 案之内建資料庫53。’以及量測出之 ==For example, it is possible to avoid uneven etching of the wafer center and edge. In order to understand the operation method of the present invention and the gas distribution device of FIG. 1 and the gas discharge of FIG. For the two, after the lithography step of the example, ADI inspection is performed, and the side measurement device or the SEM is used to measure the light step 510 of the wafer at this time). According to the critical size pattern, carefully compare the size pattern (step, judge the tendency of the H1 wire + person, and the unevenness of the pattern, and the direction and angle of the aa circle tilt (the built-in database 53 in step 5). And measured ==

氣體喷嘴i3〇a中各個喷孔_132a的氣體V量以及：狀扇板320a中每個區塊對庫的開 ^ fcb >f„! i；/ ^ ^ ^匕尾對應的開口大小，來控制氣體的分 5:Γ =:!案(步驟54°)。然後進行㈣步驟(步驟視的任昊π二二之後，進仃ΑΕΙ檢視（步驟56〇)，並且將檢 : = 到資料庫53〇，作比較分析， 3〇The gas V amount of each nozzle hole _132a in the gas nozzle i3〇a and: the opening of each block to the library in the fan plate 320a ^ fcb > f „! I; / ^ ^ ^ The opening size corresponding to the dagger To control the gas's point 5: Γ = :! case (step 54 °). Then proceed to the step (after Ren Hao π 22 of the step, enter the 仃 ΑΕΙ view (step 56)), and check: = to the data Library 53 °, for comparative analysis, 3 °

内的各個參數值。 SThe value of each parameter within. S

^批⑹二，本發明提供一種用於均勻度控制之動態流體圖二命态及其控制方法，可以解決微影製程中不可避免的生丨Ik二另邊緣之不對稱性之問題。藉由在餘刻製程中控 :::刻氣體的流體圖案’精準補償邊緣與另—邊緣之不對 1所造成的均勻度降低’使蝕刻後的晶圓，可以獲得微小的CD值以及高度的CD值均勻度。 =2 t發明已以-較佳實施例揭露如Ji，然其並非用以限 ^ ^明各任何熟習此技藝者，在不脫離本發明之精神和乾圍内’當可作各種之更動與潤飾，因此本發明之保護範^ Batch two, the present invention provides a dynamic fluid map dual life state and control method for uniformity control, which can solve the problem of asymmetry of the other edges inevitably generated in the lithography process. By controlling the fluid pattern of the ::: engraved gas in the remaining process, 'accurately compensate for the decrease in uniformity caused by the edge-to-edge mismatch 1', the wafer after etching can obtain a small CD value and a high degree of CD value uniformity. = 2 tThe invention has been disclosed in a preferred embodiment, such as Ji, but it is not intended to limit ^ ^ Anyone skilled in this art can make various changes and modifications without departing from the spirit and scope of the present invention. Retouching, so the protection scope of the present invention

200419628 五、發明說明（ίο) 圍當視後附之申請專利範圍所界定者為準第16頁 200419628 圖式簡單說明200419628 V. Description of Invention (ίο) The definition of the scope of the patent application attached to the application shall prevail. Page 16 200419628 Schematic illustration

圖式簡單說明為讓本發明之上懂，下文特舉一明如下：述和其他目的、特徵、和優點能更明顯易較佳實施例，並配合所附圖式，作詳細說示本發明之姓刻機台之結構剖面示意圖。示本發明之氣體分佈裝置之-較佳實施例的結構刮面不意圖。只發明之氣艘分佈裝置之另-較值實施例的發明之氣㈣放㈣^之-較佳實施例的第4圖是繪示本發明之流體圖案控制器之操作流程圖。圖式之標記說明 1〇〇餘刻機台反應室外壁 no 電極板 120 線圈 130 氣體分佈裝置 130a 氣體喷嘴 13 0b 氣體分佈平板 13 2a 側壁喷孔 132b 氣體噴孔 142a 底部BRIEF DESCRIPTION OF THE DRAWINGS In order to make the present invention understandable, the following is given as follows: The description and other objects, features, and advantages can be more clearly and easily implemented in the preferred embodiment, and the present invention will be described in detail with the accompanying drawings. The structural cross-section of the machine carved by the surname. The structure scraping surface showing the preferred embodiment of the gas distribution device of the present invention is not intended. Only another embodiment of the invention of the invention of the gas ship distribution device-the invention of the invention of the invention-the fourth embodiment of the invention-Figure 4 is a flow chart showing the operation of the fluid pattern controller of the present invention. Explanation of the marks in the drawing 100 Hours of time Machine reaction outside wall no Electrode plate 120 Coil 130 Gas distribution device 130a Gas nozzle 13 0b Gas distribution plate 13 2a Side wall injection hole 132b Gas injection hole 142a Bottom

第17頁 200419628 圖式簡單說明 142b 底面 144a 氣體喷孔 144b 氣體喷孔 200 晶圓 310 靜電基座 320 氣體排放控制裝置 320a 格狀扇板 322 區塊 324 下檔板 326 上樓板 330 網狀篩網 340 流體控制閥 350 閘閥 360 溫度控制裝置 400 流體分離器 410 氣流 510〜 560 步驟Page 17 200419628 Brief description of the drawing 142b Bottom surface 144a Gas nozzle 144b Gas nozzle 200 Wafer 310 Static base 320 Gas emission control device 320a Grid fan 322 Block 324 Lower baffle 326 Upper floor 330 Mesh screen 340 fluid control valve 350 gate valve 360 temperature control device 400 fluid separator 410 air flow 510 ~ 560 steps

第18頁Page 18

Claims

200419628 六、申凊專利範圍 1 · 一種動態流體圖案控制器，用於控制一蝕刻機台中之氣體分佈，至少包含：一 f體分離器，用於將一氣體細分成複數道氣流；一氣體分佈裝置，連接於該流體分離器，該氣體分佈裝置具有複數個第一氣體噴孔與複數個第二氣體噴孔，該些道氣流係對應於該些第一氣體喷孔與第二氣體噴孔，該第一氣體喷孔係對準於一晶圓之中心；以及200419628 VI. Application scope of patent 1. A dynamic fluid pattern controller for controlling the gas distribution in an etching machine, including at least: an f-body separator for subdividing a gas into a plurality of gas streams; a gas distribution The device is connected to the fluid separator. The gas distribution device has a plurality of first gas injection holes and a plurality of second gas injection holes. The air streams correspond to the first gas injection holes and the second gas injection holes. The first gas nozzle is aligned at the center of a wafer; and

一氣體排放控制裝置，環繞於該晶圓，該氣體排放控制裝置具有複數個分隔區塊，對應於該些第二氣體喷孔，該每一分隔區塊具有一氣體通道，控制通過該分隔區塊之該氣流0 2 ·如申請專利範圍第1項所述之控制器，其中在該晶圓之底部更包括設置有一流量控制閥’用以控制該蝕刻機台内之排氣速率。 3 ·如申請專利範圍第1項所述之控制器’其中該氣體分佈裝置為一氣體噴嘴，該些第二氣體喷孔係位於該氣體噴嘴之侧壁且呈等距的環狀排列。 4·如申請專利範圍第1項所述之控制器，其中該氣體分佈裝置為一氣體分佈平板，該些第二氣體喷孔係位於該氣分佈平板底面之周圍且呈等距的環狀排列。一A gas emission control device surrounds the wafer. The gas emission control device has a plurality of partition blocks corresponding to the second gas injection holes. Each partition block has a gas passage to control passage through the partition area. The airflow of the block 0 2 · The controller as described in the first item of the patent application scope, wherein a flow control valve is further provided at the bottom of the wafer to control the exhaust rate in the etching machine. 3. The controller according to item 1 of the scope of the patent application, wherein the gas distribution device is a gas nozzle, and the second gas injection holes are arranged on a side wall of the gas nozzle and are arranged in an equidistant ring shape. 4. The controller according to item 1 in the scope of the patent application, wherein the gas distribution device is a gas distribution plate, and the second gas injection holes are arranged in a circle at an equal distance around the bottom surface of the gas distribution plate. . One

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5.如申請專利範圍第丨項所述之控制器，其中該晶圓係放置於一靜電基座上，且該氣體排放控制裝置係環繞於該靜 ^如申請專利範圍第！項所述之控制器，其中該氣體排玫控制裝置為一扇狀格板，該每一分隔區塊具有一下檔板與一上檔板，利用該上、下檔板控制該氣體通道之大小。/、 ’其中該氣體排放隔區塊具有一閥5. The controller according to item 丨 in the scope of patent application, wherein the wafer is placed on an electrostatic base, and the gas emission control device surrounds the static ^ as in the scope of patent application! The controller according to the above item, wherein the gas exhaust control device is a fan-shaped grid plate, each partition block has a lower baffle plate and an upper baffle plate, and the upper and lower baffle plates are used to control the size of the gas channel . /, ’Wherein the gas discharge block has a valve

7.如申請專利範圍第1項所述之控制器控制裝置為一閥門控制裝置，該每一分門’利用該閥門控制該氣體通道之大小一蝕刻機台中之氣道氣流；體噴嘴具有複數該些道氣流係對該第一氣體噴孔孔係位於該氣體氣體排放控制裝氣體噴孔，該每分隔區塊之該氣 8 · 一種動態流體圖案控制器，用於控制-體分佈，至少包含：一流體分離器，用於將一氣體細分成複數一氣體噴嘴，連接於該流體分離器，該氣個第一氣體喷孔與複數個第二氣體喷孔，應於該些第一氣體噴孔與第二氣體噴孔，係對準於一晶圓之中心，該些第二氣體噴噴嘴之側壁且呈等距的環狀排列；以及一氣體排放控制裝置，環繞於該晶圓，該置具有複數個分隔區塊，對應於該些第二一分隔區塊具有一氣體通道，控制通過該流。7. The controller control device described in item 1 of the scope of the patent application is a valve control device, and each of the sub-doors' uses the valve to control the size of the gas channel-airway airflow in the etching machine; the body nozzle has a plurality of the The airflow holes of the first gas injection holes are located in the gas emission control device gas injection holes, and the gas in each divided block is a dynamic fluid pattern controller for controlling the volume distribution, including at least : A fluid separator for subdividing a gas into a plurality of gas nozzles connected to the fluid separator, the first gas nozzles and the second gas nozzles of the gas should be applied to the first gas The spray holes and the second gas spray holes are aligned at the center of a wafer, and the sidewalls of the second gas spray nozzles are arranged in an equidistant ring shape; and a gas emission control device surrounds the wafer, The device has a plurality of partitioned blocks, corresponding to the second one of the partitioned blocks, which has a gas channel to control the flow.

第20頁 200419628 六、申請專利範圍 9 ·如申請專利範圍第8項所述之控制器，其中在該晶圓之底部更包括設置有一流量控制閥，用以控制該蝕刻機台内之排氣速率。 10·如申請專利範圍第8項所述之控制器，其中該晶圓係放置於靜電基座上，且該氣體排放控制裝置係環繞於該靜電基座周圍。 11 · 一種動態流氟體分佈，至少一流體分離器，一氣體分佈平板有複數個第一氣、流係對應於該些體，孔係對準於該氣體分佈平板 —氣體排放控制置具有複數個分一分隔區塊具有流〇體圖案控制器’用於控制一蝕刻機台中之包含：用於將一，連接於體噴孔與第一氣體 %一晶圓之底面之周裝置，環隔區塊，一氣體通氣體細該流體複數個喷孔與中心，圍且呈繞於該對應於道，控分成複數分離器，第二氣體第二氣體該些第二等距的環晶圓，該該些第二制通過該道氣流；氣體分佈平板具喷孔，該些道氣喷孔，該第一氣氣體喷孔係位於狀排列；以及氣體排放控制裝氣體喷孔，該每分隔區塊之該氣 ΐ ·麻！0申請專利範圍第11項所述之控制器，其中在該晶圓 -邛更包括設置有一流量控制閥，用以控制該蝕刻機台Page 20, 200419628 VI. Patent application scope 9 · The controller as described in item 8 of the patent application scope, further comprising a flow control valve at the bottom of the wafer to control the exhaust in the etching machine rate. 10. The controller according to item 8 of the scope of the patent application, wherein the wafer is placed on an electrostatic base, and the gas emission control device surrounds the electrostatic base. 11 · A dynamic flow fluorine gas distribution, at least one fluid separator, a gas distribution plate having a plurality of first gas, a flow system corresponding to the bodies, and a hole system aligned with the gas distribution plate-the gas emission control device has a plurality of Each divided block has a flow pattern controller, which is used to control an etching machine including: a peripheral device for connecting one to the bottom of the wafer and the first gas to the first gas% of the wafer. In the block, a plurality of nozzles and a center of the fluid pass through the gas, surround the corresponding channel, and are divided into a plurality of separators, the second gas, the second gas, and the second equidistant ring wafers. The second systems pass through the airflow; the gas distribution plate is provided with spray holes, the gas spray holes, and the first gas gas spray holes are arranged in a shape; and the gas emission control gas injection holes are arranged in each partition Block the discouragement · hemp! 0 The controller described in item 11 of the scope of patent application, wherein a wafer flow control valve is provided on the wafer to control the etching machine

第21頁 200419628 六、申請專利範圍内之排氣速率。 13.如申請專利範圍第1丨項所述之控制器，其中該晶圓係放置於一靜電基座上，且該氣體排放控制裝置係環繞於該靜電基座周圍。 14· 一種動態流體圖案控制器，用於控制一姓刻機台中之氣體分佈，至少包含：一流體分離器，用於將一氣體細分成複數道氣流；一氣體分佈裝置，連接於該流體分離器，該氣體分佈裝置具有複數個第一氣體喷孔與複數個第二氣體喷孔，該些道氣流係對應於該些第一氣體喷孔與第二氣體喷孔，該第一氣體喷孔係對準於一晶圓之中心；以及一扇狀格板’環繞於該晶圓，該扇狀格板具有複數個分隔區塊’對應於該些第二氣體喷孔’該每一分隔區塊具有一氣體通道以及一下檔板與一上檔板，利用該上、下檔板調整該氣體通道之大小以控制通過該分隔區塊之該氣流。 15·如申請專利範圍第1 4項所述之控制器，其中在該晶圓之底部更包括設置有一流量控制閥，用以控制該姓刻機台内之排氣速率。 16.如申請專利範圍第14項所述之控制器，其中該晶圓係放置於一靜電基座上，且扇狀格板係環繞於該靜電基座周 200419628 六、申請專利範圍圍0Page 21 200419628 6. Exhaust rate within the scope of patent application. 13. The controller according to item 1 of the patent application scope, wherein the wafer is placed on an electrostatic base, and the gas emission control device surrounds the electrostatic base. 14. A dynamic fluid pattern controller for controlling the gas distribution in a carving machine, including at least: a fluid separator for subdividing a gas into a plurality of gas streams; a gas distribution device connected to the fluid separation Device, the gas distribution device has a plurality of first gas injection holes and a plurality of second gas injection holes, and the air streams correspond to the first gas injection holes and the second gas injection holes, and the first gas injection holes Is aligned at the center of a wafer; and a fan-shaped grid plate surrounds the wafer, the fan-shaped grid plate has a plurality of partition blocks 'corresponding to the second gas injection holes' and each partition region The block has a gas channel, a lower baffle plate, and an upper baffle plate. The size of the gas channel is adjusted by using the upper and lower baffle plates to control the air flow passing through the partition block. 15. The controller according to item 14 of the scope of patent application, wherein a flow control valve is further provided at the bottom of the wafer to control the exhaust rate in the engraving machine. 16. The controller according to item 14 of the scope of patent application, wherein the wafer is placed on an electrostatic base, and the fan-shaped grid is around the electrostatic base. 200419628

17· —種氣體分佈一流體分一氣體分具有複數氣流係對氣體噴孔一閥門控數個分隔塊具有一之大小以動態流體圖，至少包含離器，用於佈裝置，連個第一氣體應於該些第係對準於一制裝置，環區塊，對應氣體通道與控制通過該將一軋體細分成複數道氣漭· 接於該流體分離器，兮’ 喷孔與複數個第二氣2:體分佈裝置 -氣體喷孔與第二孔’該些道晶圓之中心；以及札體喷孔’該第- 繞於該晶圓，該閥門控制裝置且有複於該些第二氣體噴孔，二有複只礼，該母一分隔區一閥門，制該閥Π調整該氣體通道分隔區塊之該氣流。 1 8·如申請專利範圍第1 7項所述之控制器，其中在該晶圓之底部更包括設置有一流量控制閥，用以控制該蚀刻機台内之排氣速率。17 · —a kind of gas distribution—a fluid, a gas, a plurality of gas flow systems, a gas nozzle, a valve, a number of partitions, a size of one, and a dynamic fluid map, including at least a separator for a cloth device, and a first The gas should be aligned with a system, ring block, and corresponding gas channel and control. The rolling body is subdivided into a plurality of air channels. Connected to the fluid separator, the nozzles and a plurality of The second gas 2: the volume distribution device-the gas spray hole and the second hole 'the center of the wafers; and the volume spray hole' the first-is wound around the wafer, the valve control device and there are more The second gas injection hole is provided with a plurality of gifts. The mother-divided area has a valve, and the valve is used to adjust the air flow in the gas-passage divided area. 18. The controller according to item 17 of the scope of patent application, wherein a flow control valve is further provided at the bottom of the wafer to control the exhaust rate in the etching machine.

19·如申請專利範圍第1 7項所述之控制器，其中該晶圓係放置於一靜電基座上，且閥門控制裝置係壞繞於該靜電基座周圍。 2 0. —種蝕刻晶圓之控制方法，係用於一蝕刻機台，5亥方法至少包括下列步驟··19. The controller according to item 17 of the scope of patent application, wherein the wafer is placed on an electrostatic base, and the valve control device is wound around the electrostatic base. 2 0. — A control method for etching a wafer, which is used in an etching machine. The method of 5 Hai includes at least the following steps.

第23頁 200419628 六、申請專利範圍一 _ 量測該晶圓之一臨界尺寸圖案；根據該臨界尺寸圖案，決定該晶圓之一水平角度；以該晶圓之該水平角度對應於一氣體分佈圖案資料庫，決定钱刻該晶圓之一氣體分佈比例；以及進行一#刻步驟。 21·如申請專利範圍第2 0項所述之控制方法，其中量測該臨界尺寸圖案包括使用一掃瞄式電子顯微鏡。 2 2.如申請專利範圍第2 〇項所述之控制方法，其中該水平角度包括該一水平傾斜方向與一水平傾斜角度。 2 3·如申請專利範圍第2 〇項戶斤述之控制方法，其中該氣體控制比例係由一動態流體控制器來控制。 2 4.如申請專利範圍第2 〇項所述之控制方法，其中在進行該蝕刻步驟之後，更包括進行〆#刻後檢視，並且將資料回饋到該氣體分佈圖案資料庫中。Page 23 200419628 VI. Scope of patent application 1 _ Measure a critical dimension pattern of the wafer; determine a horizontal angle of the wafer according to the critical dimension pattern; the horizontal angle of the wafer corresponds to a gas distribution The pattern database determines the gas distribution ratio of one of the wafers engraved with money; and performs a #engraving step. 21. The control method as described in item 20 of the scope of patent application, wherein measuring the critical dimension pattern includes using a scanning electron microscope. 2 2. The control method as described in item 20 of the scope of patent application, wherein the horizontal angle includes the horizontal tilt direction and a horizontal tilt angle. 2 3. The control method described in item 20 of the scope of patent application, wherein the gas control ratio is controlled by a dynamic fluid controller. 2 4. The control method as described in item 20 of the scope of patent application, wherein after performing the etching step, it further includes performing a post-etching review, and feeding back data to the gas distribution pattern database.