TW200417444A - Pad conditioner and manufacturing method thereof - Google Patents
Pad conditioner and manufacturing method thereof Download PDFInfo
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- TW200417444A TW200417444A TW92104763A TW92104763A TW200417444A TW 200417444 A TW200417444 A TW 200417444A TW 92104763 A TW92104763 A TW 92104763A TW 92104763 A TW92104763 A TW 92104763A TW 200417444 A TW200417444 A TW 200417444A
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200417444200417444
發明所屬之技術領域 4匕學機械研磨(Chemical CMP)展置及其製造方法,且特別 器(Pad Conditioner)及其製造 本發明是有關於一種 Mechanical Polishing 是有關於一種研磨墊整理 方法。 先前技術 ϋ Ϊ Ϊ f肢衣中,隨著元件尺寸持續縮減,微影曝光 解析度J相對增加,且伴隨著曝光景深的縮減,對於晶圓 表面之问低起伏私度的要求更為嚴苛。因此,目前晶圓的 平坦化(PlanariMtlon)都是依賴化學機械研磨製程來完 成,它獨特的非等向性磨除性質除了用於晶圓表面輪廓之 平坦化之外,亦可應用於垂直及水平金屬内連線 (Interconnects)之鑲嵌結構的製作、前段製程中元件淺 溝渠隔離製作及先進元件之製作、微機電系統平坦化和平 面顯示器製作等。 習知進行化學機械研磨製程時,通常分為旋轉式平台 (Rotational Platen)研磨機或是線性移動式(Linear)研 磨機。旋轉式平台研磨裝置大多使用研磨頭(C a r r丨e r )抓 住晶圓,然後把晶圓的正面壓在舖有一層供有研滎The technical field to which the invention belongs 4 Chemical CMP exhibition and its manufacturing method, and special conditioner (Pad Conditioner) and its manufacturing The present invention relates to a mechanical polishing and a polishing pad finishing method. In the prior art, as the component size continues to shrink, the lithographic exposure resolution J is relatively increased, and with the reduction of the exposure depth of field, the requirements for low fluctuations on the wafer surface are more stringent. . Therefore, the current planarization of the wafer (PlanariMtlon) is completed by the chemical mechanical polishing process. Its unique anisotropic abrasiveness is used for the planarization of the wafer surface contour, and can also be applied to vertical and Production of mosaic structures for horizontal metal interconnects, production of shallow trench isolation of components in the previous process, production of advanced components, planarization of micro-electro-mechanical systems, and production of flat displays. In the conventional chemical mechanical polishing process, it is usually divided into a rotary platen grinding machine or a linear grinding machine. Most rotary table grinding devices use a grinding head (Ca r r 丨 e r) to hold the wafer, and then press the front side of the wafer on a layer for research.
(Slurry)之研磨墊(Pad)的研磨台(Polishing Table)上進修 行研磨(Ρ 〇 Π s h i n g);另外,線性移動式研磨機裝置也是 使用研磨頭抓住晶圓,然後把晶圓的正面壓在藉由兩滑輪 傳動之迴圈式研磨墊上進行研磨。 然而在經過一段時間的研磨製程之後,上述兩種化學(Polishing) on the polishing table (Slurry) of the polishing pad (Pading table); In addition, the linear mobile polishing machine device also uses a polishing head to hold the wafer, and then the front of the wafer Grinding is carried out by pressing on a ring-type polishing pad driven by two pulleys. However, after a period of grinding process, the above two chemistry
10864twf.ptd 第5頁 2UU417444 五、發明說明(2) 積1機口的研磨墊上都會有殘留顆粒(Particle)堆 來自^ ^粒有的來自研聚中的研磨微粒,有的則可能是 $二=研磨;除的薄膜。因此,為保持研磨墊的清 粒,以;f用一研磨墊整理器來去除研磨墊上的殘留顆 粒 j增加研磨墊的使用壽命及效能。 第1圖至第2圖所繪示糸羽Α ^ 方法的示意圖。首先,靖二種研磨墊整理器的製造 104 Λ :底層1〇2 ’接著在底層102上散佈鑽石顆粒 Γ著Λ 頁粒104可以經由筛選而具有接近的大小。 ;:丄2照第2圖’利用硬焊的方式,在底層102上形成< Λ他合金所構成的固定層1(36,以將鑽石顆粒 104固疋於底層102上而形成研磨塾整理哭。 問題然而’依上述方法所製造之研磨塾整理器具有下述的 位大小不鑽::粒經過師選’然而並無法完全避免鑽石顆 ==::"因^所,成的研磨塾調整器[較 且,鑽石顆粒在配^=(/上弟^圈示位置Α所示),而 (如第2圖圈^立置B祕底層上%可能會產生堆疊的情形 鑽石高度較高,而卜、+不,此種情形同樣會使得堆疊處的 在研磨時相當容易引^鑽石顆粒高度不均的問題將會使得< 而且,二=易到傷研磨塾的表面。 的鑽石顆粒都::2石顆粒固定的方式’並不能保證所有 以上,較大顆的鑽:嵌在固定層中達鑽石顆粒的一半高度 纘石顆粒鑲嵌在固定層中的高度就越小,10864twf.ptd Page 5 2UU417444 V. Description of the invention (2) There will be residual particles (Particles) on the polishing pad of the product port of the machine. Some particles come from the abrasive particles in the research and polymerization, and some may be $ 2. = Grinding; thin film removed. Therefore, in order to keep the particles of the polishing pad clean, use a polishing pad organizer to remove the remaining particles on the polishing pad. J Increase the life and efficiency of the polishing pad. Schematic diagrams of the method of 糸 羽 A ^ are shown in FIGS. 1 to 2. First, the manufacture of two types of polishing pad finishers 104 Λ: bottom layer 10 2 ′, and then diamond particles are spread on the bottom layer 102. Γ Λ page particles 104 can have a size close to each other through screening. ;: 丄 2 According to FIG. 2 'Using a brazing method, a fixed layer 1 (36 made of Λ other alloy is formed on the bottom layer 102 to fix the diamond particles 104 on the bottom layer 102 to form a polishing process. Cry. The problem is, however, that the "grinding and finishing device manufactured according to the above method has the following bit sizes: not drilled: the grains are selected by the teacher", but the diamonds cannot be completely avoided == :: "塾 Adjuster [Compared with, diamond particles are in the position of ^ = (/ 上 弟 ^ circled position A), and (as shown in the circle in Figure 2 ^ standing on the bottom layer of B.% may cause a stack High, but no, + this situation will also make the stacking place quite easy to cause the problem of uneven height of diamond particles will make < moreover, two = easy to hurt the surface of the grinding diamond. Particles :: 2 ways of fixing stone particles' does not guarantee all of the above. Larger diamonds: embedded in the fixed layer up to half the height of the diamond particles. The smaller the height of the vermiculite particles embedded in the fixed layer,
第6頁 200417444 五、發明說明(3) 尤其是對鑽石顆粒堆疊處(如第2圖圈示位置b _ 堆豐的鑽石顆粒鑲嵌在固定層的高度很小,因下而吕, =磨時,很容易因為應力而發生鑽石剝落的情’ f進行 得研磨墊表面被刮傷,縮短研磨墊整理器的使用备=而使 此外,例如是在研磨金屬層時,研漿的㈣ =°p。 7,由於強酸性的研漿可能會腐蚀研磨墊整理养’、於 ^因而造成鑽石顆粒容易脫落,因此必須接 、口疋 (EhUu)刷除的方式,也就是在每一批研'么用上場 磨製程後使用研磨墊整理器作刷除處理。钬衣王則或研 刷除無法隨時清除研磨過程中的殘留顆粒’、,、、 ,由於外場 效較臨場刷除差’而且會增加製程的複雜度。以其清除功< 再者’上述配置鑽石的方式並不能控制鑽 粒大小、#列形狀與排列密度,而可能會產:顆粒的顆 «等狀況,因此並不容易使研磨墊整理哭 '贊石顆粒堆 速度。 的^持均一的研磨 發明内容 因此,本發明的目的是提供—種研磨塾 ^法。議吏研磨,…的鑽石顆粒具有心露: 本發明的再一目的是提供一種肼麻轨Μ , 方法,沪豹避务研磨墊整理哭沾研磨塾2理器及其製造 々在,此夠避免研Μ受正理^的鑽石顆粒脫 本發明的又一目的是提供一滁m/ ° 方法,能夠使研磨塾整理器同時適理器及其製造 磨環境。 週用於酸性以及鹼性的研Page 6 200417444 V. Description of the invention (3) Especially for the diamond particle stacking position (as shown in the circled position in Figure 2) _ The height of the diamond particles embedded in the fixed layer is very small, due to the following, = It is very easy for the diamond to peel off due to stress. The surface of the polishing pad is scratched, and the use of the polishing pad finisher is shortened. In addition, for example, when grinding a metal layer, the grind ㈣ = ° p 7. Because the strong acid slurry may corrode the abrasive pads, which will cause the diamond particles to fall off easily, it must be connected and brushed by EhUu, that is, in each batch. After using the on-site grinding process, use a polishing pad finisher for the brushing treatment. The king of clothing or grinding brush can not remove the residual particles in the grinding process at any time ',,,, because the external field effect is worse than on-site brushing' and will Increasing the complexity of the process. With its cleaning function < furthermore, the above method of arranging diamonds cannot control the size of the drill particles, the shape of the #column and the arrangement density, and may produce conditions such as: the size of the particles, etc., so it is not easy Finishing the polishing pad 'Zanshi particles pile speed. ^ Consistent uniform grinding Summary of the invention Therefore, the object of the present invention is to provide a method of grinding 议. Grinding, diamond particles with heart-shaped: Another object of the present invention is to provide A hydrazine track track method. A method for slicing and polishing grinding pads and preparations made by the Shanghai Leopard avoidance polishing pad. This method can avoid the removal of diamond particles that are subject to proper treatment. Another object of the present invention is to provide m / ° method, which can make the grinding and finishing machine suitable for the conditioner and its manufacturing environment at the same time.
1〇864twf r $ 7頁 200417444 五、發明說明(4) 本發明的另一目的是提供一種研磨塾整理器及其製造 方法,能夠控制鑽石顆粒的顆粒大小、排列形狀與密度, 以提供均一的研磨速率。 本發明提出一種研磨塾整理器,此研磨塾整理具有一 底層與複數個鑽石顆粒。其中此些鑽石顆粒係鑲嵌於底層 之一表面上,並且鑽石顆粒露出底層表面的部分係具有相 同的高度。 本發明提出一種研磨墊整理器的製造方法,此方法係 形成包覆有複數個鑽石顆粒的一底層,其中此些鑽石顆粒 係對齊於底層之一表面,接著,由鑽石顆粒所對齊之表面 側,去除部分的底層以露出鑽石顆粒。 在上述研磨墊整理器的製造方法中,其中形成包覆有 鑽石顆粒的底層的方法,係可以將鑽石顆粒配置在一基準 面上,再於基準面上散佈一待燒結粉末以覆蓋鑽石顆粒, 然後將待燒結粉末燒結形成包覆有鑽石顆粒的底層。 而且,上述研磨墊整理器的製造方法中,還可以在基 準面上配置一篩網,並於篩網之複數個網眼之間的基準面 上個別配置複數個鑽石顆粒,以控制鑽石顆粒的排列大小 以及排列密度。 尚且,在上述之研磨墊整理器及其製造方法中,在鑽 石顆粒之中具有一最小高度Η,並且此些鑽石顆粒露出底 層表面的高度係小於Η / 2。 再者,在上述之研磨墊整理器及其製造方法中,底層 的材質包括金屬或是陶瓷。 ,1〇864twf r $ 7 pages 200417444 V. Description of the invention (4) Another object of the present invention is to provide a grinding and finishing device and a method for manufacturing the same, which can control the particle size, arrangement shape and density of diamond particles to provide uniformity. Milling rate. The present invention provides a grinding and finishing device. The grinding and finishing device has a bottom layer and a plurality of diamond particles. The diamond particles are embedded on one surface of the bottom layer, and the part of the diamond particles exposed on the bottom surface has the same height. The present invention provides a method for manufacturing a polishing pad finisher. This method forms a bottom layer coated with a plurality of diamond particles, wherein the diamond particles are aligned on a surface of the bottom layer, and then, the surface side aligned by the diamond particles is Remove the bottom of the part to expose diamond particles. In the manufacturing method of the polishing pad finisher described above, wherein the method of forming a bottom layer coated with diamond particles is to arrange the diamond particles on a reference surface, and then spread a powder to be sintered on the reference surface to cover the diamond particles, The powder to be sintered is then sintered to form a bottom layer coated with diamond particles. Moreover, in the manufacturing method of the polishing pad finisher described above, a sieve may be arranged on the reference plane, and a plurality of diamond particles may be individually arranged on the reference plane between the plurality of meshes of the screen to control the diamond particles. Permutation size and permutation density. Moreover, in the above-mentioned polishing pad finisher and its manufacturing method, there is a minimum height Η among the diamond particles, and the height of these diamond particles exposed to the surface of the bottom layer is less than Η / 2. Furthermore, in the polishing pad organizer and the manufacturing method thereof, the material of the bottom layer includes metal or ceramic. ,
10864twf.ptd 第8頁 200417444 五、發明說明(5) 由上述可知,由於本發明 嵌於底層上的鑽石顆粒係具有 磨墊的整理時並不會刮傷研磨 而且,由於本發明之研磨 鑲嵌於底層内的高度進行良好 能夠牢固的固定於底層中而不 墊整理器的使用壽命。 尚且,由於本發明之研磨 陶瓷粉末熱壓燒結,因此具有 能夠同時適用於鹼性與酸性的 墊調整器的使用壽命。 此外,由於本發明之研磨 鑽石顆粒的顆粒大小、排列形 控制,因此係能夠使研磨墊調 率。 為讓本發明之上述和其他 顯易懂,下文特舉較佳實施例 說明如下: 實施方式 本發明提供一種研磨墊整 其製造方法,依此製造方法所 應用於各種化學機械研磨(Che Pol ishing,簡稱CMP)裝置上 (Rotational Platen)研磨機 i 之研磨墊調整器係能夠使鑲 均一的高度,因此在進行研 墊的表面。 ' 墊調整器係能夠對鑽石顆粒 的控制,因而使得鑽石顆粒 易脫落,進而能夠延長研磨 塾调整器的底層係能夠採用 良好的耐酸、耐鹼特性,而 研磨製程,並能夠延長研磨_ 墊调整器係能夠藉由篩網對 狀以及排列密度進行良好的 整器保持在均一的研磨速 目的、特徵、和優點能更明 ’並配合所附圖式,作詳細 理器(Pad Conditioner)及鲁 製造的研磨墊整理器係可以 mical Mechanical ,例如旋轉式平台 氣是線性移動式(L i n e a r )研10864twf.ptd Page 8 200417444 V. Description of the invention (5) From the above, it can be known that the diamond particles embedded in the bottom layer of the present invention do not scratch and grind when finishing with an abrasive pad, and because the abrasive of the present invention is embedded in The height in the bottom layer is well and can be firmly fixed in the bottom layer without padding the service life of the finisher. Furthermore, since the ground ceramic powder of the present invention is hot-pressed and sintered, it has a service life capable of being applied to both alkaline and acidic pad conditioners. In addition, since the size and arrangement of the abrasive diamond particles of the present invention are controlled, the polishing pad can be adjusted. In order to make the above and other aspects of the present invention comprehensible, preferred embodiments are described below as follows: Embodiments The present invention provides a polishing pad and a method for manufacturing the same, and the manufacturing method is applied to various chemical mechanical polishing (Che Pol ishing) (Abbreviated as CMP) The polishing pad adjuster of the polishing machine i on the (Rotational Platen) device can make the setting uniform, so it is on the surface of the polishing pad. '' The pad adjuster can control the diamond particles, so that the diamond particles are easy to fall off, which can extend the grinding. The bottom layer of the adjuster can adopt good acid and alkali resistance characteristics, and the grinding process can extend the grinding _ pad adjustment The device is able to keep the shape and arrangement density of the screen through the screen to maintain a uniform grinding speed. The purpose, characteristics, and advantages can be more clear. And in conjunction with the attached drawings, it is used as a detailed conditioner (Pad Conditioner) and Lu. The manufactured polishing pad organizer can be mechanical mechanical, for example, the rotary platform is a linear moving (L inear) research
10864twf.ptd 第9頁 20041744410864twf.ptd Page 9 200417444
五、發明說明(6) 磨機’然本發明可有相關不同之變型,凡符合本發明之精 神,皆適用於本發明之範疇。 第一實施例 第3圖至第5圖所繪示為本發明之第一實施例之研磨墊 整理器的製造流程示意圖。首先,請參照第3圖,提供一 個基準面2 〇 2 ’其中此基準面2 〇 2例如是具黏性表面的紙, 接著,將鑽石顆粒204配置在基準面2〇2之一側表面上,其 例如是將鑽石顆粒204配置在紙的具黏性表面上,以使鑽 石顆粒2 0 4黏附在紙的表面上。其中此鑽石2 〇 4例如是事先f 經過篩選而具有接近的大小,並且於此些鑽石顆粒2 〇 4中 之袁小鑽石顆粒2 0 4的南度例如是η。 接著’請參照第4圖,以預定形成研磨墊調整器之底 層的待燒結粉末,將鑽石顆粒完全覆蓋(未圖示),然後, 將包含有鑽石顆粒204的待燒結粉末,以熱壓(Heat press)的方式燒結形成包覆有鑽石顆粒204的底層206,且 在燒結過程中,作為基準面2 〇 2的紙會被燒掉而移除。其 中待燒結粉末的材質例如是金屬粉末或是陶瓷粉末,而 且’在所形成的底層2 0 6中,鑽石顆粒2 0 4係對齊底層2 〇 6 的一側表面。 . 接著’請參照第5圖,由鑽石顆粒204所對齊之底層 2 0 6表面側,去除部分的底層2〇6並露出鑽石顆粒2〇4的部 分南度’以形成由底層2〇6a與鑽石顆粒204所組成的研磨 塾調整器。其中所去除底層2〇6的厚度,較佳為小於最小V. Explanation of the invention (6) The mill ′ Of course, the present invention may have different related variations, and any spirit conforming to the present invention is applicable to the scope of the present invention. First Embodiment FIGS. 3 to 5 are schematic diagrams showing a manufacturing process of a polishing pad finisher according to a first embodiment of the present invention. First, please refer to FIG. 3, and provide a reference surface 2 0 2 ', where the reference surface 2 0 2 is, for example, a paper with an adhesive surface, and then, the diamond particles 204 are arranged on one of the side surfaces of the reference surface 20 2. For example, the diamond particles 204 are arranged on the sticky surface of the paper, so that the diamond particles 204 adhere to the surface of the paper. Wherein, the diamond 204 is, for example, filtered in advance to have a close size, and the south degree of the Yuan Xiao diamond particles 204 in these diamond particles 204 is, for example, η. Next, please refer to FIG. 4. The diamond particles to be sintered are scheduled to form the bottom layer of the polishing pad adjuster to completely cover the diamond particles (not shown). Then, the powder to be sintered containing the diamond particles 204 is hot-pressed ( Heat press) to sinter to form the bottom layer 206 coated with diamond particles 204, and during the sintering process, the paper serving as the reference surface 202 will be burned and removed. The material of the powder to be sintered is, for example, a metal powder or a ceramic powder, and 'in the formed bottom layer 2006, the diamond particles 204 are aligned with one side surface of the bottom layer 206. Next, please refer to FIG. 5, the surface side of the bottom layer 2 06 aligned by the diamond particles 204, remove a part of the bottom layer 20 and expose a part of the south of the diamond particles 204, to form a bottom layer 2 06a and Grinding chirp adjuster composed of diamond particles 204. The thickness of the removed bottom layer 20 is preferably less than the minimum
200417444200417444
五、發明說明(7) 鑽石顆粒204的一半高度(亦即是H/2),而且去除部八产 丨 77 底層 z U D的方法,例如是採用研磨或是喷砂的方式,並且,卷 底層2 0 6的材質為金屬時,還可以使用酸洗的方式以去二 部分底層2 0 6。 * 請繼續參照第5圖以說明本發明之第一實施例的研磨 塾整理器。本發明之研磨墊整理器係由底層2 〇 6a與 粒204所組成。 '貧石顆 其中底層2 0 6 a例如是金屬材質或是陶瓷材質所構成, 其例如是由金屬粉末或是陶瓷粉末經熱壓燒結所形成。 鑽石顆粒2 04係鑲嵌於底層2 0 6 a之一側的表面上,其C 中此些鑽石顆粒204露出於底層206a表面的部分具有相同 的高度’並且,鑽石顆粒2〇4露出底層206a表面的高度’ 係小於最小鑽石顆粒2 〇 4之一半高度。 由上述第一實施例可知,在第4圖的步驟中,由於鑽 石顆粒2 0 4係被包覆在底層2 〇 6中,並對齊底層2 〇 6的〆側 表面(亦即是原先的基準面2 〇 2 ),因此,即使在配置鑽石 顆粒時產生鑽石顆粒較大(第5圖圈示位置A)或是鑽石顆粒 堆疊(第5圖圈示位置B)的情形,由於在第5圖中,係由鑽 石顆粒204所對齊那一側的底層2〇6表面去除部分的底層 206,因此能夠確保露出的鑽石顆粒2〇4具有相同的高度。 而且’在上述第一實施例中,藉由對底層的去除 厚度進打良好的控制,而能夠使得最小的鑽石顆粒2〇4鑲 嵌於底層206a内的高度能夠超過其一半的高度η,進而使 得鑽石顆粒204能夠牢固的固定於底層““中夂而不易脫V. Description of the invention (7) Half the height of the diamond particles 204 (ie, H / 2), and the method of removing the bottom layer 丨 77 bottom layer z UD, such as grinding or sandblasting, and rolling the bottom layer When the material of 2 06 is metal, acid pickling can also be used to remove the second part of the bottom 2 06. * Please continue to refer to FIG. 5 to explain the polishing / finishing device of the first embodiment of the present invention. The polishing pad finisher of the present invention is composed of a bottom layer 206a and particles 204. 'Poor stone particles, wherein the bottom layer 2 0 6 a is made of, for example, a metal material or a ceramic material, and is formed, for example, from a metal powder or a ceramic powder by hot pressing and sintering. The diamond particles 2 04 are set on the surface of one side of the bottom layer 2 0 6 a. The part of the diamond particles 204 exposed on the surface of the bottom layer 206 a has the same height ′, and the diamond particles 204 are exposed on the surface of the bottom layer 206 a. 'Height' is less than one and a half height of the smallest diamond particle 204. It can be known from the first embodiment that in the step of FIG. 4, since the diamond particles 204 are coated in the bottom layer 206 and aligned with the lateral surface of the bottom layer 206 (that is, the original reference) Surface 2 〇 2), therefore, even when the diamond particles are arranged, the diamond particles are larger (circumscribed position A in Fig. 5) or the diamond particles are stacked (circumscribed position B in Fig. 5). In the middle, the bottom layer 206 on the side of the bottom layer 206 that is aligned by the diamond particles 204 is removed, so it can be ensured that the exposed diamond particles 204 have the same height. Moreover, in the above-mentioned first embodiment, the thickness of the minimum diamond particles 204 embedded in the bottom layer 206a can be made more than half of the height η by controlling the thickness of the bottom layer to be removed. Diamond particles 204 can be firmly fixed to the bottom layer ""
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尚且,如果底層2 0 6 a的材質是採用陶瓷的話,由於陶 瓷具有耐酸鹼的性質’則此研磨墊整理器係能夠同時適= 於驗性與酸性的研磨環境。 第二實施例 第6圖至第9圖所繪示為本發明之第二實施例之研磨塾 整理器的製造流程示意圖。首先,請同時參照第6圖與第7 圖,提供一個基準面3 0 2,其中此基準面3 〇 2例如是具黏性 表面的紙,接著,如第7圖所示,在基準面3 0 2上放置篩網^ 3 1 〇,接著,藉由篩網3 1 0的篩選,將適當大小的鑽石顆粒 3 0 4配置在篩網3 1 〇之網眼中的基準面3 〇 2上,其例如是將 ,石顆粒304散佈在篩網310上,此時只有顆粒小於網^眼者 得以進入網眼中並黏附於基準面3 0 2上。並且於此些鑽石 顆粒3 04中之最小鑽石顆粒3 〇4的高度例如是η。 接著’請參照第8圖,將篩網3 1 〇移除,再以預定形成 7磨塾调整器之底層的待燒結粉末,將鑽石顆粒3 0 4完全 覆盍(未圖示),然後,將包含有鑽石顆粒304的待燒結粉 末’以熱壓的方式燒結形成包含有鑽石顆粒3 〇4的底層 3 〇 6 ’且在燒結過程中,作為基準面3 0 2的紙會被燒掉而移 除。其中待燒結粉末的材質例如是金屬粉末或是陶瓷粉 末’而且’在所形成的底層3 0 6中,鑽石顆粒3 0 4係對齋麻 層3 0 6的一側表面。 一 接著’請參照第9圖,由鑽石顆粒3 04所對齊之底層Moreover, if the material of the bottom layer 2 06 a is ceramic, since the ceramic has acid and alkali resistance properties, then the polishing pad finishing system can be suitable for both abrasive and acidic polishing environments. Second Embodiment FIG. 6 to FIG. 9 are schematic diagrams showing a manufacturing process of a grinding / finishing device according to a second embodiment of the present invention. First, please refer to Fig. 6 and Fig. 7 at the same time, and provide a reference surface 3 02, where the reference surface 3 02 is, for example, a paper with an adhesive surface, and then, as shown in Fig. 7, on the reference surface 3 A sieve ^ 3 1 〇 is placed on 0 2, and then, by screening of the sieve 3 1 0, diamond particles 3 4 of an appropriate size are arranged on a reference surface 3 002 in the mesh of the sieve 3 1 〇. For example, the stone particles 304 are scattered on the screen 310. At this time, only those particles smaller than the mesh can enter the mesh and adhere to the reference surface 3 02. And the height of the smallest diamond particle 304 among these diamond particles 304 is η, for example. Next, please refer to FIG. 8, remove the sieve 3 1 〇, and then completely cover the diamond particles 3 0 4 (not shown) with the powder to be sintered that is intended to form the bottom layer of the 7 grinding regulator, and then, The powder to be sintered containing diamond particles 304 is sintered by hot pressing to form a bottom layer 3 〇6 ′ containing diamond particles 304. During the sintering process, the paper serving as the reference surface 302 will be burned away and Removed. The material of the powder to be sintered is, for example, a metal powder or a ceramic powder. In addition, in the formed bottom layer 3, the diamond particles 3 04 are on one side surface of the Ramie layer 3 06. 1 Next ’Please refer to Figure 9, the bottom layer aligned by the diamond particles 3 04
第12頁 200417444Page 12 200417444
五、發明說明(9) 3 0 6表面側,去除部分的底層3 0 6並露出鑽石顆粒3 〇 4的部 分咼度’以形成由底層3 0 6 a與鑽石顆粒3 0 4所組成的研j 墊調整器。其中所去除之底層3 0 6的厚度,較佳為小於^ 小鑽石顆粒3 04的一半高度(亦即是H/2),而且去除部分取 層3 0 6的方法’例如是採用研磨或是喷砂的方式,並且 一 當底層3 0 6的材質為金屬時,還可以使用酸洗的方式去匕 部分的底層3 0 6。 承 請繼續參照第9圖以說明本發明之第二實施例的研磨 墊整理器。本發明之研磨墊整理器係由底層3 〇 6 a與鑽石顆 粒304所組成。 、 其中底層3 0 6 a例如是由金屬材質或是陶究材質所構 成’其例如是由金屬粉末或是陶瓷粉末經熱壓燒結所形 成。 鑽石顆粒3 0 4係鑲嵌於底層3 〇 6 a之一側的表面上,其 中此些鑽石顆粒304露出於底層306a表面的部分具有相同 的高度,並且,鑽石顆粒304露出底層3〇6a表面的高度, 係不大於最小鑽石顆粒3 〇4之高度的一半。尚且鑽石顆粒 3 04在底層3 0 6a的鑽石顆粒的配置區域内係呈二維矩陣的 整齊排列。 本發明第二實施例之研磨墊調整器,除了具有如同第· 一實施例的優點之外,在第6、7圖所示之配置鑽石顆粒的 步驟中’由於在基準面3 〇 2上事先配置篩網3丨〇,使得只有 鑽石顆粒3 0 4小於網眼者才能黏附於基準面3 〇 2之上,因 此’藉由篩網3 1 0的規範,鑽石顆粒3 〇 4係能夠整齊/均勻V. Description of the invention (9) On the surface side of 3 0 6, a part of the bottom layer 3 6 is removed and a part of the diamond particles 3 0 4 are exposed to form a research composed of the bottom layer 3 0 6 a and the diamond particles 3 0 4 j Pad adjuster. The thickness of the removed bottom layer 3 0 6 is preferably less than half the height of the small diamond particles 3 04 (that is, H / 2), and the method of removing a part of the layer 3 0 6 is, for example, grinding or Sandblasting method, and when the material of the bottom layer 3 06 is metal, the bottom layer 3 6 of the dagger part can also be removed by pickling. Please continue to refer to FIG. 9 to describe a polishing pad organizer according to a second embodiment of the present invention. The polishing pad organizer of the present invention is composed of a bottom layer 306a and diamond particles 304. Wherein, the bottom layer 3 0 6 a is formed of a metal material or a ceramic material, for example, and it is formed of a metal powder or a ceramic powder by hot pressing and sintering. The diamond particles 3 0 4 are embedded on the surface of one side of the bottom layer 306 a. The part of the diamond particles 304 exposed on the surface of the bottom layer 306 a has the same height, and the diamond particles 304 are exposed on the surface of the bottom layer 3 06 a. The height is not more than half the height of the smallest diamond particle 304. Moreover, the diamond particles 3 04 are arranged neatly in a two-dimensional matrix in the arrangement area of the diamond particles of the bottom layer 3 0 6a. In addition to the advantages of the first embodiment, the polishing pad adjuster according to the second embodiment of the present invention includes the steps of arranging diamond particles as shown in FIGS. Configure the screen 3 丨 〇, so that only those diamond particles 3 04 smaller than the mesh can adhere to the reference surface 3 02, so 'by the specifications of the screen 3 10, the diamond particles 3 04 can be neat / Uniform
10864twf.ptd 第13頁 200417444 五、發明說明(ίο) 的配置於基 網眼大小與 與密度進行 的需求。 在本發 的分佈在底 之分布形式 採用其他的 而且, 面202 、 302 夠位於同一 202 、 302 , 之後,其中 發明的技術 綜上所 1 ·經由 鑲谈於其上 磨墊的整理 研磨物不會 2 ·經由 能夠對鑽石 而使得鑽石 而能夠延長 3 ·經由 準面3 0 2上‘ 排列密度, 良好控制, 明上述第一 層的一側表 ’例如是可 分佈方式等 在本發明上 的目的,係 平面上,然 只要在燒結 的鑽石顆粒 特徵之内。 述,本發明 本發明之製 的鑽石顆粒 時並不會刮 因為研磨墊 本發明之製 顆粒鑲嵌於 顆粒能夠牢 研磨塾的壽 本發明之製 〕 \ /·~~ί cj , ’藉由改變所使用篩網3 1 0的 係能夠對鑽石顆粒3 0 4的排列形狀 以因應實際製程對於不同研磨速率 、第二實施例中,鑽石顆粒係均勻 面上’然而本發明並不侷限於上述 以在一侧表面上呈環狀分布,或是 〇 述第一、第二實施例中,使用基準 為了使鑽石顆粒204、304之一側能( 而本發明並不限定於使用基準面 成本^明之包覆鑽石顆粒的底層 對齊底層的一側表面,就包含於本 =少具有下述的優點: 造方法所得的研磨墊調整器,由於 係具有岣一的高度,因此在進行研 傷研磨塾 心 乂的表面進而能夠確保被 叉損而連帶被刮傷。 ^方去所得的研磨塾調整器,由於ί - 内的南度進行良好的控制,因 i的固定於底層巾而不易脫落,進 仏方去所得的研磨墊調整器,由於10864twf.ptd Page 13 200417444 V. The description of the invention (ίο) is based on the requirements of the size and density of the base mesh. In the distribution of the distribution of the hair at the bottom, other distribution forms are used, and the faces 202, 302 are located at the same 202, 302. After that, the technology of the invention is summarized 1. Through the finishing of the abrasive pad on the polishing pad, Meeting 2 • The diamond can be extended by being able to make the diamond 3 • The arrangement density on the quasi plane 3 0 2 is well controlled, indicating that the above-mentioned side table of the first layer is, for example, a distributable manner in the present invention. The purpose, on the plane, is within the characteristics of the sintered diamond particles. It is said that the diamond particles produced by the present invention will not be scratched because the abrasive pads of the present invention are embedded in the particles and can be ground sharply. The production of the present invention] \ / · ~~ ί cj, 'By changing The system of the screen 3 1 0 can be used to shape the arrangement of the diamond particles 3 0 4 according to the actual process. For different grinding rates, in the second embodiment, the diamond particles are uniform on the surface. However, the present invention is not limited to the above. The surface is distributed in a ring shape on one surface, or in the first and second embodiments described above, the reference is used to enable one of the diamond particles 204 and 304 to be lateral (the present invention is not limited to the use of a reference surface). The bottom layer coated with diamond particles is aligned with the side surface of the bottom layer and is included in the bottom. It has the following advantages: The polishing pad adjuster obtained by the manufacturing method has a single height, so it is grinding and grinding. The surface of the cymbal can further ensure that it is damaged by the fork and is also scratched. ^ The grinding cymbal adjuster obtained by the square is well controlled due to the inner south degree, and i is not easy to fall off because it is fixed to the bottom towel. Fo to the side of the polishing pad obtained adjuster, since
l〇864twf.ptd 200417444 五、發明說明(11) 底層係能夠採用陶瓷粉末熱壓燒結,因此所形成之陶瓷研 磨墊調整器係具有良好的耐酸、耐鹼特性,而能夠同s寺適 用於鹼性與酸性的研磨製程,並能夠延長研磨墊調整器的 使用壽命。 4.經由本發明之製造方法所得的研磨墊調整器,由於 能夠藉由篩網對鑽石顆粒的排列形狀以及排列密度進行良 好的控制,因此能夠使研磨墊調整器保持在均一的研磨速 率。 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神( 和範圍内,當可作各種之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。l〇864twf.ptd 200417444 V. Description of the invention (11) The bottom layer can be sintered by hot pressing of ceramic powder, so the ceramic polishing pad adjuster formed has good acid and alkali resistance, and can be used in the same way as alkali And acidic polishing process, and can prolong the service life of the polishing pad adjuster. 4. Since the polishing pad adjuster obtained by the manufacturing method of the present invention can well control the arrangement shape and arrangement density of diamond particles through a screen, the polishing pad adjuster can be maintained at a uniform polishing rate. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make various changes and decorations without departing from the spirit (and scope) of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application.
10864twf.ptd 第15頁 200417444 圖式簡單說明 第1圖至第2圖所繪示為習知一種研磨墊整理器的製造 方法的示意圖。 第3圖至第5圖所繪示為本發明之第一實施例之研磨墊 整理器的製造流程示意圖。 第6圖至第9圖所繪示為本發明之第二實施例之研磨塾· 整理器的製造流程示意圖。 圖式標示說明 1 02、2 0 6、2 0 6a、3 0 6、3 0 6a :底層 104 、 204 、 304 :鑽石顆粒 1 0 6 :固定層 ( 2 0 2、3 0 2 :基準面 A、B :圈示位置10864twf.ptd Page 15 200417444 Brief Description of Drawings Figures 1 to 2 are schematic diagrams showing a conventional method for manufacturing a polishing pad finisher. 3 to 5 are schematic diagrams showing the manufacturing process of the polishing pad finisher according to the first embodiment of the present invention. 6 to 9 are schematic diagrams showing a manufacturing process of a grinding mill and finisher according to a second embodiment of the present invention. Description of the diagrams: 1 02, 2 0 6, 2 0 6a, 3 0 6, 3 0 6a: bottom layer 104, 204, 304: diamond particles 10 6: fixed layer (2 0 2, 3 0 2: reference plane A , B: circle position
10864twf,ptd 第16頁10864twf, ptd Page 16
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TWI469207B (en) * | 2011-04-20 | 2015-01-11 | 中國砂輪企業股份有限公司 | Chemical mechanical grinding dresser |
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TWI469207B (en) * | 2011-04-20 | 2015-01-11 | 中國砂輪企業股份有限公司 | Chemical mechanical grinding dresser |
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