TW200414670A - Photoreceptive amplifier circuit and optical pickup element including the same - Google Patents
Photoreceptive amplifier circuit and optical pickup element including the same Download PDFInfo
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- TW200414670A TW200414670A TW093100442A TW93100442A TW200414670A TW 200414670 A TW200414670 A TW 200414670A TW 093100442 A TW093100442 A TW 093100442A TW 93100442 A TW93100442 A TW 93100442A TW 200414670 A TW200414670 A TW 200414670A
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/125—Optical beam sources therefor, e.g. laser control circuitry specially adapted for optical storage devices; Modulators, e.g. means for controlling the size or intensity of optical spots or optical traces
- G11B7/127—Lasers; Multiple laser arrays
- G11B7/1275—Two or more lasers having different wavelengths
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B7/12—Heads, e.g. forming of the optical beam spot or modulation of the optical beam
- G11B7/13—Optical detectors therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
- G11B2007/0003—Recording, reproducing or erasing systems characterised by the structure or type of the carrier
- G11B2007/0006—Recording, reproducing or erasing systems characterised by the structure or type of the carrier adapted for scanning different types of carrier, e.g. CD & DVD
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Abstract
Description
200414670 玖、發明說明： 【發明所屬之技術領域】 本發明係有關於使用於能重現及/或記錄所謂cd_r/rw 和DVD±R/RWi光波長相異的2種類之光碟的光讀取元件 用之受光放大電路及光讀取元件，更詳細而言，係有關於 使用於為了將雷射光強度控制於特定功率，而具有監控該 雷射光強度的功能之受光元件之受光放大電路之相關技 術。 【先前技術】 例如前述CD-R/RW光碟係780 nm，前述DVD±R/RW光碟 係650 nm，其係因記錄媒體或光源的進步，而依次制定光 波長相異之光碟的規格。能重現及/或記錄如此之複數種類 的光碟之裝置，係被廣泛地使用於個人電腦之週邊裝置 等。繼而如此之裝置其為了安定地進行重現或記錄，一般 係檢測照射至光碟之雷射光束的一部份，並監控該檢測信 號’而將雷射光強度控制在最佳狀態。 另一方面，即使對前述相異之波長而分別設置光源，而 為了光讀取元件之小型化或低成本化等，光二極體等之受 光7L件亦共用。該受光元件的靈敏度之溫度特性，係在波 長變化時而產生變化。 、補Wj述/皿度特性之一般性的方法，係使用溫度特性互 為=異的電阻於雷射功率監控用之受光放大器電路，而控 =受光放大器電路的靈敏度之溫度特性，並以該受光放大 屯路之酿度特性而消除受光元件之溫度特性。繼之，在光200414670 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to an optical reading device used to reproduce and / or record two types of optical discs with different wavelengths of cd_r / rw and DVD ± R / RWi The light-receiving amplifier circuit and the light-reading element used are more specifically related to a light-receiving amplifier circuit for a light-receiving element that has a function of controlling the laser light intensity in order to control the laser light intensity to a specific power. . [Prior art] For example, the aforementioned CD-R / RW optical disc is 780 nm, and the aforementioned DVD ± R / RW optical disc is 650 nm. The specifications of optical discs having different optical wavelengths are successively formulated due to advances in recording media or light sources. Devices capable of reproducing and / or recording such plural types of optical discs are widely used in peripheral devices of personal computers and the like. Then, such a device generally detects a part of the laser beam irradiated to the optical disc for stable reproduction or recording, and monitors the detection signal 'to control the laser light intensity at an optimal state. On the other hand, even if a light source is provided for each of the aforementioned different wavelengths, the light-receiving 7L element such as a photodiode is also shared for miniaturization or cost reduction of the optical reading element. The temperature characteristic of the sensitivity of the light receiving element changes when the wavelength changes. A general method for supplementing the characteristics of the capacitors is to use the light-receiving amplifier circuit with different temperature characteristics = different resistances for laser power monitoring, and control the temperature-response temperature characteristic of the light-receiving amplifier circuit. The light-receiving characteristics of the light-receiving element are eliminated while the temperature characteristics of the light-receiving element are eliminated. Followed by the light
O:\90\90427.DOC 200414670 碟之記錄/重現時’係以雷射功率監控用之受光元件而常時 檢測雷射光強度的變化，並藉由將因應於該變化的受光元 件之輪出^以反饋至作為發光元件H極體之措施， 即能將雷射光強度維持於最佳強度。 然而’如此之方法係如前述，由於相對於波長的變化而 導致之受光元件之溫度特性的變化，而無法檢測出正確之 雷射光強纟，故特別是在記錄日寺，形成引發錯誤之i個主要 此處，例如特開2001-23218號公報（公開日：平成13年1 月26曰)」係揭示由於因光波長之發光元件的溫度而產生變 化，故藉由監控雷射光強度而將其控制於最佳狀態，而補 償發光元件的温度特性之㈣。此外， 公錄開日：平卿月23日)，係揭示因寫入和讀出: 使雷射光強度產生變化時’ _端監控器而監控雷射光 強度，而正確地監控前述雷射光強度。 使上述之習知技術’亦無法補償相對於波長的 變化之受光元件之溫度特性。 【發明内容】 本發明之目的係提供一受光放 一 又尤敌大包路及具備其之光讀取 係即使因波長的變化而導致受光元件的靈敏度之 溫度特性產生變化，亦能補償此情形。 a本發明之受光放大電路係為了達成上述之㈣，其係將 來自稷數軸的波長之光信號所射人之受光元件的信號予 以放大而輪出之受光放大電路，含有：初級放大器，O: \ 90 \ 90427.DOC 200414670 At the time of recording / reproducing a disc, it is a light-receiving element used for laser power monitoring to constantly detect the change in laser light intensity, and by rotating the light-receiving element in response to the change, ^ The feedback to the H pole body of the light emitting element can maintain the laser light intensity at the optimal intensity. However, as described above, due to the change in the temperature characteristics of the light-receiving element due to the change in wavelength, the correct laser light intensity cannot be detected. Therefore, especially in the recording of the temple, the error i Mainly, for example, Japanese Patent Application Laid-Open No. 2001-23218 (publication date: January 26, 2013) "is revealed that the temperature of the light emitting element changes due to the wavelength of light. It is controlled in an optimal state and compensates for the temperature characteristics of the light-emitting element. In addition, the official record date: Pingqing month 23), it is revealed that the laser light intensity is monitored due to writing and reading: when the laser light intensity is changed, and the laser light intensity is correctly monitored. Even the above-mentioned conventional technique cannot compensate the temperature characteristics of the light receiving element with respect to the change in wavelength. [Summary of the Invention] The object of the present invention is to provide a light-receiving amplifier that is particularly enemies and a light-reading system with the same. Even if the temperature characteristic of the sensitivity of the light-receiving element changes due to a change in wavelength, it can compensate for this . a In order to achieve the above, the light receiving amplifier circuit of the present invention is a light receiving amplifier circuit that amplifies the signal of a light receiving element radiated from a light signal of a wavelength of the unitary axis and amplifies the signal, including: a primary amplifier,
O:\90\90427.DOC 200414670 輸入來自前述受光元件的信號；以及後級放大器，其係將 前述初級放大器的輸出予以放大；決定前述初級放大器之 反饋電阻和前述後級放大器之靈敏度的電阻之至少一部 份，係由具有互為相異的溫度特性之電阻體所形成，而前 述電阻體係因應於前述光信號的波長種類而相異。 根據上述之構成，則例如在前述CD-R/RW光碟的780 nm 和前述DVD±R/RW光碟的650 nm之一種將來自複數種類的 波長的光信號所射入的受光元件的信號予以放大而輸出的 受光放大電路當中，僅設置前述波長的種類之反饋電阻（增 贫電阻）於輸入來自受光元件的信號之初級放大器，次級以 後，係僅設置前述波長的種類之放大器，其係具備決定輸 入電阻或反饋電阻等的靈敏度之電阻，並以具有互為相異 的溫度特性之方式而形成決定前述初級放大器之反饋電阻 或次級以後之放大器的靈敏度的電阻之至少一部份之電阻 體，且因應於前述光信號之波長的_而切換所使用之反 饋黾阻或放大器等，而切換前述電阻體。 因此，即使因波長的變化而導致受光元件的靈敏度的溫 度特性產生變化’亦能藉由使用具有適應於各個波長的溫 度特性之溫度特性之電阻體於決定反饋電阻或靈敏度的電 阻’而能以該受光放大電路之溫度特性而消除前述受光元 件之溫度特性。 此外’本發明之光讀取 忭你便用上述之受光放大電 路。因此’即使因波長的變 -择枯m 又化而¥致叉先兀件的靈敏度的 敏度彳寸性產生變化，亦能 又尤双大弘路的靈敏度之溫度O: \ 90 \ 90427.DOC 200414670 inputs the signal from the aforementioned light-receiving element; and the post-amplifier, which amplifies the output of the aforementioned primary amplifier; the resistance which determines the feedback resistance of the aforementioned primary amplifier and the sensitivity of the aforementioned post-amplifier At least a part is formed by resistors having mutually different temperature characteristics, and the aforementioned resistance system is different according to the wavelength type of the aforementioned optical signal. According to the above configuration, for example, a signal of a light receiving element into which a light signal of a plurality of wavelengths is incident is amplified at one of 780 nm of the CD-R / RW disc and 650 nm of the DVD ± R / RW disc. In the output light-receiving amplifier circuit, only the feedback resistor (increasing resistance) of the aforementioned wavelength type is set to the primary amplifier that inputs the signal from the light-receiving element. After the secondary level, only the amplifier of the aforementioned wavelength type is provided. The resistance that determines the sensitivity of the input resistance or feedback resistance, and forms a resistance that determines at least part of the resistance of the feedback resistance of the primary amplifier or the sensitivity of the amplifier after the secondary in such a way that they have mutually different temperature characteristics. Body, and the feedback resistor or amplifier used is switched according to the wavelength of the aforementioned optical signal, and the aforementioned resistor body is switched. Therefore, even if the temperature characteristic of the sensitivity of the light-receiving element changes due to a change in wavelength, it is possible to determine the resistance of the feedback resistance or sensitivity by using a resistor having a temperature characteristic that is adapted to the temperature characteristic of each wavelength. The temperature characteristic of the light receiving amplifier circuit eliminates the temperature characteristic of the light receiving element. In addition, in the optical reading of the present invention, you use the above-mentioned light receiving amplifier circuit. Therefore, ’even if the sensitivity of the sensitivity of the leading component changes due to the change of the wavelength, the selectivity m may be changed, and the temperature of the sensitivity of Shuangda Honglu can be improved.
O:\90\90427.DOC 特性而將其消除，；舍 、-而此果現不党靈敏度的溫度特性之影鲢 的光讀取元件。 9 本發明之更另外之目的、特徵、以及優點，係可由如下 斤丁之。己載而充分理解。此外，本發明之優點係可由參閱 添加之圖式的如下之說明而獲得理解。 【實施方式】 據圖1乃至圖3而說明有關於本發明之實施之一形能如 下。 〜、 币圖1係用以說明載裝本發明之實施之一形態的受光放大 电路之β己錄/重現裝置i之光學系統之圖示。該記錄/重現裝 置1係此圯錄/重現所謂CD-R/RW和dvd土R/RW之光波長相 /、、的2種頦的光碟2之裝置。發光元件之雷射二極體3係在前 述CD R/RW光碟進行78〇 nm，而前述£^〇±尺/1?^光碟進行 650 nm雷射光之發光。該雷射光係在準直儀透鏡斗中變換成 平行光，且在光束分離器5中使光程彎曲9〇。之後，介由準 直儀透鏡6和對物透鏡7而照射於前述光碟2。 來自光碟2之反射光，係自對物透鏡7和準直儀透鏡6而通 過光束分離器5，並以光點透鏡予以集光而射入於受光元件 9。文光tl件9係自所射入之光信號而使資訊信號重現，並 且作成追跡或對焦伺服器用的信號，而輸出至未圖示之信 號處理電路或控制電路等。在記錄時，來自雷射二極體3 的射出光係對應於應寫入的資料而施以調變。 在如此所構成之光學系統當中，具備··光讀取元件1〇, 其係设置於雷射二極體3的近傍的位置；及/或光讀取元件O: \ 90 \ 90427.DOC characteristics and eliminate them; this is not an optical reading element that affects the temperature characteristics of sensitivity. 9 Further objects, features, and advantages of the present invention are as follows. It is contained and fully understood. In addition, the advantages of the present invention can be understood by referring to the following description of the attached drawings. [Embodiment] According to FIG. 1 to FIG. 3, one embodiment of the present invention can be described as follows. Fig. 1 is a diagram for explaining an optical system of a β-recording / reproducing device i on which a light-receiving amplifier circuit according to an embodiment of the present invention is mounted. The recording / reproducing device 1 is a device for recording / reproducing two types of optical discs 2 which are so-called CD-R / RW and dvd / R / RW optical wavelength phases. The laser diode 3 of the light-emitting element performs 78 ° nm on the aforementioned CD R / RW disc, and emits laser light of 650 nm on the aforementioned £ ^ ±± / 1 ° ^ disc. This laser light is converted into parallel light in a collimator lens bucket, and the optical path is bent by 90 in the beam splitter 5. Thereafter, the optical disc 2 is irradiated through the collimator lens 6 and the objective lens 7. The reflected light from the optical disc 2 passes through the beam splitter 5 from the objective lens 7 and the collimator lens 6, and is collected by a spot lens to be incident on the light receiving element 9. The text light tl9 is to reproduce the information signal from the incident light signal, and to generate a signal for tracking or focusing server and output it to a signal processing circuit or control circuit (not shown). At the time of recording, the emitted light from the laser diode 3 is modulated in accordance with the data to be written. In the optical system thus constituted, the optical reading element 10 is provided, which is provided near the laser diode 3; and / or the optical reading element
O:\90\90427.DOC -10- 200414670 11，其係设置於中介光束分離器5之相反側位置等。藉由該 光讀取元件10、11而監控來自雷射二極體3之射出光的一部 份，並藉由將該監控輸出予以反饋於雷射二極體3之措施， 使雷射光強度調整為最佳強度。 圖2係表示作為光讀取元件10、丨丨而使用之本發明之實施 之一形恶的光讀取元件21之受光放大電路的電氣性構成之 區塊圖。該光讀取元件21係大略地具備：光二極體1>1)、放 大器Al、A2、以及差動放大器A3、A4而構成。光二極體 PD係共用於780 nm和650 nm的雷射光之受光元件。初級放 大器之放大器A1係第1級之放大器，其係將來自該光二極體 PD的電流信號變換成電壓信號。初級放大器之放大器八2係 參考用所設置之另1個之第1級之放大器。差動放大器A3、 A4係第2級之放大器，其係輸入來自放大器a卜八2的輸出， 並求得此等之差份。 放大态A1係具備放大器部op 1、以及亦進行來自光二極 體PD的電流信號之電流-電壓變換之反饋電阻（增益電 阻）Rfl而構成。參考放大器之放大器A2係不連接光二極體 PD，而且和放大器A1相同地，具備放大器部〇1>2和反饋電 阻Rf2而構成。 另一方面，650 nm之DVD系用之後級放大器之差動放大 杰A3 ’係具備放大器部OP3、輸入電阻Rs31、Rs32、輪入 分壓電阻Rf31、以及反饋電阻Rf32而構成。來自放大器ai 之輸出’係藉由輸入電阻Rs31和輸入分壓電阻1^31而在和 基準電壓Vs之間進行分壓，並輸入至放大器部〇p3的正輸O: \ 90 \ 90427.DOC -10- 200414670 11, which is located on the opposite side of the intermediate beam splitter 5 and so on. A part of the emitted light from the laser diode 3 is monitored by the optical reading elements 10 and 11, and the intensity of the laser light is made by measuring the feedback of the monitoring output to the laser diode 3. Adjust for optimal intensity. Fig. 2 is a block diagram showing the electrical configuration of a light-receiving amplifying circuit of an ill-formed optical reading element 21, which is an embodiment of the present invention, which is used as the optical reading element 10 ,. The optical reading element 21 is roughly constituted by a photodiode 1> 1), amplifiers A1, A2, and differential amplifiers A3, A4. Photodiode PD is a light-receiving element for laser light of 780 nm and 650 nm. The amplifier A1 of the primary amplifier is a first-stage amplifier, which converts a current signal from the photodiode PD into a voltage signal. The primary amplifier amplifier 8-2 is another reference amplifier set for the first stage. The differential amplifiers A3 and A4 are the second-stage amplifiers, which are input from the output of the amplifier a2 and 2 and obtain these differences. The amplified state A1 includes an amplifier section op 1 and a feedback resistance (gain resistance) Rfl that also performs current-voltage conversion of a current signal from the photodiode PD. The amplifier A2 of the reference amplifier is not connected to the photodiode PD, and is configured like the amplifier A1, and includes an amplifier unit 01> 2 and a feedback resistor Rf2. On the other hand, the DVD of 650 nm uses a differential amplifier of the subsequent amplifier. A3 'is composed of an amplifier section OP3, input resistors Rs31, Rs32, a wheel-in divider resistor Rf31, and a feedback resistor Rf32. The output from the amplifier ai is divided by a reference voltage Vs by an input resistor Rs31 and an input voltage-dividing resistor 1 ^ 31, and is input to a positive output of the amplifier section oop3.
O:\90\90427.DOC -11 - 200414670 入端。此外，來自放大器A2之參考電壓，係中介輸入電阻 Rs32而輸入至放大器部OP3的負輸入端。並且，在該負輸 入端係中介反饋電阻Rf32而反饋放大器部OP3的輸出。因 此，對應於來自放大器A1的光輸入之輸出電壓、以及對應 於和無來自放大器A2的光輸入之參考電壓的差份之輸出， 係自該差動放大器A3而導出，並使因光二極體PD之光輸入 而導致之電壓變化份予以放大而輸出。O: \ 90 \ 90427.DOC -11-200414670 incoming. In addition, the reference voltage from the amplifier A2 is input to the negative input terminal of the amplifier section OP3 through the intermediate input resistor Rs32. In addition, a feedback resistor Rf32 is interposed between the negative input terminal and the output of the amplifier unit OP3 is fed back. Therefore, the output corresponding to the output voltage of the optical input from the amplifier A1 and the difference corresponding to the reference voltage with and without the optical input from the amplifier A2 are derived from the differential amplifier A3, and are caused by the photodiode. The voltage variation caused by the light input of PD is amplified and output.
同樣地，780 nm之CD系用之後級放大器之差動放大器 A4，係具備放大器部OP4、輸入電阻Rs41、Rs42、輸入分 壓電阻Rf41、以及反饋電阻Rf42而構成。來自放大器A1之 輸出，係藉由輸入電阻Rs41和輸入分壓電阻Rf41而在和基 準電壓Vs之間進行分壓，並輸入至放大器部OP4的正輸入 端。此外，來自放大器A2之參考電壓，係中介輸入電阻Rs42 而輸入至放大器部OP4的負輸入端。並且，在該負輸入端係 中介反饋電阻Rf42而反饋放大器部OP4的輸出。Similarly, the CD of 780 nm is a differential amplifier A4, which is a subsequent amplifier, and includes an amplifier section OP4, input resistors Rs41, Rs42, input voltage-dividing resistor Rf41, and feedback resistor Rf42. The output from the amplifier A1 is divided from the reference voltage Vs by the input resistor Rs41 and the input voltage-dividing resistor Rf41, and is input to the positive input terminal of the amplifier section OP4. In addition, the reference voltage from the amplifier A2 is input to the negative input terminal of the amplifier section OP4 through the intermediate input resistor Rs42. An output of the amplifier unit OP4 is fed back to the negative input terminal via a feedback resistor Rf42.
在如上述所構成之光讀取元件21當中，初級放大器之放 大器A1之反饋電阻Rfl、以及參考放大器之放大器A2之反 饋電阻Rf2，係例如藉由擴散電阻（電阻體）等而以互為相同 之溫度特性（薄膜電阻值）且形成於相同之電阻值。後級放大 器之差動放大器A3、A4係分別具有電阻Rf3卜Rf32 ; Rf41、 Rf42。In the optical reading element 21 configured as described above, the feedback resistance Rfl of the amplifier A1 of the primary amplifier and the feedback resistance Rf2 of the amplifier A2 of the reference amplifier are mutually the same, for example, by a diffusion resistor (resistor) or the like. Temperature characteristics (thin film resistance value) and formed at the same resistance value. The differential amplifiers A3 and A4 of the post amplifier have resistors Rf3 and Rf32; Rf41 and Rf42, respectively.
此處，當作成Rf31=Rf32=Rf3、Rf41=Rf42=Rf4、Rs31 = Rs3 2=Rs3、Rs41=Rs42=Rs4，且該受光放大電路的靈敏度S 〔V/W〕係將光二極體PD之變換效率作成η〔 A/W〕時，係 O:\90\90427.DOC -12- 200414670 可由下式表示。 吖 3(4) 沿 3(4) S = ηχ Rfl x 其中，文字之3(4)係分別來自差動放大器A3、A4之輸出。 相對於前述靈敏度S〔 V/W〕的溫度T〔 °C〕之偏微分， 係可由下式表示Here, it is assumed that Rf31 = Rf32 = Rf3, Rf41 = Rf42 = Rf4, Rs31 = Rs3 2 = Rs3, Rs41 = Rs42 = Rs4, and the sensitivity S [V / W] of the light-receiving amplifier circuit is the photodiode PD. When the conversion efficiency is η [A / W], the system O: \ 90 \ 90427.DOC -12- 200414670 can be expressed by the following formula. A3 (4) along 3 (4) S = ηχ Rfl x Among them, 3 (4) of the characters are from the outputs of the differential amplifiers A3 and A4, respectively. The partial differential of temperature T [° C] with respect to the aforementioned sensitivity S [V / W] can be expressed by the following formula
+ 77 X Rfl X 欣/3(4) R/3(4) dRs3(4)+ 77 X Rfl X Xin / 3 (4) R / 3 (4) dRs3 (4)
dT 沿3⑷沿3⑷2 dT 此外，靈敏度的微分溫度係數（dS/dT)/S，係可由下式表示 m 戦4) 沿 3(4) 因此，靈敏度S之溫度係數即為 (S之溫度係數）〔ppm/°c〕=(77之溫度係數）+(Rfl之溫度係 數）+ (Rf3(4)之溫度係數）-(Rs3(4)之溫度係數） 亦即，電阻Rfl、Rf2 ; Rf31、Rf32 ; Rf41、Rf42係形成 作用於和光二極體PD相同極性之溫度特性，而輸入電阻 Rs31、Rs32 ; Rs41、Rs42係形成作用於和光二極體PD相反 極性之温度特性。光二極體PD之變換效率h之溫度係數，雖 亦根據製程而定，但，例如對具有650 nm之波長的射入光 而為200〔 ppm/°C〕，對具有780 nm之波長的射入光而為2000 〔ppm广C〕。 因此，例如由溫度係數為500〔 ppm/°C〕之擴散電阻而形 成反饋電阻Rfl，並由溫度係數分別為500〔 ppm/°C〕、1200 〔ppm/°C〕之擴散電阻而形成電阻Rf3、Rs3。據此，來自 波長為650nm之DVD系用輸出的差動放大器A3之輸出，係 O:\90\90427.DOC -13- 200414670 如下式所示，能使靈敏度之溫度特性成為零。 (S之溫度係數）〔ppm/〇C〕=200 + 500 + 500-1200-0 此外，例如將電阻Rf4、Rs4之溫度係數分別設定為500 〔ppm/°C〕和 3000〔 ppm/°C〕。據此，來自波長為 780 nm 之CD系用輸出的差動放大器A4之輸出，亦如下式所示，能 使靈敏度之溫度特性成為零。 (S之溫度係數）〔ppm/°C〕=2000 + 500 + 500-3000=0 如此處理，並不依存於射入光的波長，而能使受光放大 電路之輸出的溫度特性成為零。 另一方面，多晶石夕電阻係其本身為具有負的溫度特性， 且即使組合多晶矽電阻和擴散電阻，亦不依存於波長而能 實現靈敏度的溫度係數為零之受光放大電路。 例如，對65 0 nm的波長係由溫度係數為500〔 ppm/°C〕之 擴散電阻而形成反饋電阻Rfl，且由溫度係數為-350〔 ppm/ °C〕之多晶矽電阻而形成電阻Rf3，並由溫度係數為350 〔ppm/°C〕之擴散電阻而形成輸入電阻Rs3。據此，能如下 式之使靈敏度的溫度特性成為零。 (S之溫度係數）〔ppm/°C〕=200 + 500 + (-350)-350=0 此外，對780 nm的波長係例如由溫度係數為-2000之多晶 矽電阻而形成電阻Rf4，且由溫度係數為500〔 ppm/°C〕之 擴散電阻而形成輸入電阻Rs4。據此，能如下式之使靈敏度 的溫度特性成為零。 (S之溫度係數）〔ppm/°C〕=2000 + 500 + (-2000)-500=0 此外，即使未使用擴散電阻，而僅由溫度係數相異之多 O:\90\90427.DOC -14- 200414670 亦月b貫現溫度特性成為零之受光放 晶矽電阻而構成電路 大電路。 例如，對650麵的波長係*溫度係數為_5〇〇〔沖 之多晶矽電阻而形成電阻Rfl、Rf3，且由溫度係數為__ 〔ppm/°c〕之多晶矽電阻而形成輸入電阻以”據此，能如 下式之使靈敏度的溫度特性成為零。 (s之溫度係數）〔ppmrc〕=2〇〇+(-5〇〇)+(_5〇〇h__=〇 此外’對780 nm的波長係例如由溫度係數為_2〇〇〇之多晶 石夕電阻而形成電阻Rf4，且由溫度係數為侧〔ppm/t〕之 多晶石夕電阻而形成輪入電阻Rs4。才康此，能如下式之使靈敏 度的溫度特性成為零。 (s之溫度係數）〔ppm/t:〕=2〇〇〇+( 5〇〇)+(_2〇〇〇)_(_5〇〇)=〇 如以上所敘述，即使射入光的波長產生變化，亦能使靈 敏度之溫度係數成為零。因此，能常時檢測出正確之雷射 光強度，且能安定地進行複數的雷射波長之光碟2的記錄/ 重現。 此外，藉由使用不依存於波長而能常時使如此之雷射功 率監控用《光元件之輸出的溫度特性成為零之受光放大電 路於前述光讀取元件1〇、U之措施，即能以丨個晶片而正確 地實現相對於2個波長之雷射功率的監控器。 此外，设置光二極體PD之參考用的另丨個放大器八2於第工 級’而在第2級之各差動放大器A3、A4，係輸入來自光二 極體PD的#號所輸入之來自初級的放大器ai的輸出和來 自放大裔A2的輸出，並求得此等之差份。據此，能僅將因dT along 3⑷ along 3⑷2 dT In addition, the differential temperature coefficient of sensitivity (dS / dT) / S can be expressed by the following formula m m4) along 3 (4) Therefore, the temperature coefficient of sensitivity S is (temperature coefficient of S) [Ppm / ° c] = (temperature coefficient of 77) + (temperature coefficient of Rfl) + (temperature coefficient of Rf3 (4))-(temperature coefficient of Rs3 (4)) That is, the resistances Rfl, Rf2; Rf31, Rf32; Rf41, Rf42 form the temperature characteristics acting on the same polarity as the photodiode PD, and the input resistances Rs31, Rs32; Rs41, Rs42 form the temperature characteristics acting on the opposite polarity of the photodiode PD. Although the temperature coefficient of the conversion efficiency h of the photodiode PD depends on the process, for example, it is 200 [ppm / ° C] for incident light having a wavelength of 650 nm, and for radiation having a wavelength of 780 nm. The incident light is 2000 [ppm wide C]. Therefore, for example, the feedback resistance Rfl is formed by a diffusion resistance having a temperature coefficient of 500 [ppm / ° C], and the resistance is formed by a diffusion resistance having a temperature coefficient of 500 [ppm / ° C] and 1200 [ppm / ° C], respectively. Rf3, Rs3. Accordingly, the output of the differential amplifier A3 from the DVD-based output with a wavelength of 650 nm is O: \ 90 \ 90427.DOC -13- 200414670, which can make the temperature characteristic of sensitivity zero. (Temperature coefficient of S) [ppm / 〇C] = 200 + 500 + 500-1200-0 In addition, for example, the temperature coefficients of the resistors Rf4 and Rs4 are set to 500 [ppm / ° C] and 3000 [ppm / ° C, respectively 〕. Accordingly, the output from the differential amplifier A4 of the CD-based output with a wavelength of 780 nm is also shown in the following equation, which can make the temperature characteristic of sensitivity zero. (Temperature coefficient of S) [ppm / ° C] = 2000 + 500 + 500-3000 = 0 This treatment does not depend on the wavelength of the incident light, but can make the temperature characteristic of the output of the light receiving amplifier circuit zero. On the other hand, polycrystalline silicon resistors are light-receiving amplifying circuits that have a temperature coefficient of zero that does not depend on the wavelength, even if the polycrystalline silicon resistor and the diffusion resistor are combined, even if the polycrystalline silicon resistor and the diffusion resistor are combined. For example, for a wavelength of 65 nm, the feedback resistance Rfl is formed by a diffusion resistance with a temperature coefficient of 500 [ppm / ° C], and the resistance Rf3 is formed by a polycrystalline silicon resistance with a temperature coefficient of -350 [ppm / ° C]. The input resistance Rs3 is formed by a diffusion resistance having a temperature coefficient of 350 [ppm / ° C]. This makes it possible to make the temperature characteristic of the sensitivity zero. (Temperature coefficient of S) [ppm / ° C] = 200 + 500 + (-350) -350 = 0 In addition, for a wavelength of 780 nm, for example, a resistance Rf4 is formed by a polycrystalline silicon resistor having a temperature coefficient of -2000, and The input resistance Rs4 is formed by a diffusion resistance having a temperature coefficient of 500 [ppm / ° C]. Accordingly, the temperature characteristic of the sensitivity can be made zero by the following formula. (Temperature coefficient of S) [ppm / ° C] = 2000 + 500 + (-2000) -500 = 0 In addition, even if the diffusion resistance is not used, it is different only by the temperature coefficient O: \ 90 \ 90427.DOC -14- 200414670 Yiyue b realized that the temperature characteristics of the light-receiving crystal silicon resistance became zero and formed a large circuit. For example, for a wavelength of 650 planes, the temperature coefficient is _500 (the impact of polycrystalline silicon resistance to form resistances Rfl, Rf3, and the temperature coefficient is __ [ppm / ° c] to form the input resistance to " According to this, the temperature characteristic of sensitivity can be made to be zero by the following formula: (temperature coefficient of s) [ppmrc] = 2000 + (-5〇〇) + (_ 5〇〇h __ = 〇 In addition, the wavelength of 780 nm For example, the resistance Rf4 is formed by a polycrystalline silicon resistor with a temperature coefficient of 2,000, and the in-wheel resistance Rs4 is formed by a polycrystalline silicon resistor with a temperature coefficient of [ppm / t]. The temperature characteristic of the sensitivity can be made zero by the following formula: (temperature coefficient of s) [ppm / t:] = 20000 + (500) + (_2〇〇〇) _ (_ 500) = 〇 As described above, even if the wavelength of the incident light changes, the temperature coefficient of sensitivity can be made zero. Therefore, the correct laser light intensity can be detected at all times, and the complex laser wavelength of the optical disc 2 can be stably performed. Recording / reproducing. In addition, by using wavelength independent of wavelength, such laser power monitoring The measure of the light-receiving amplifying circuit whose temperature characteristic becomes zero in the aforementioned optical reading element 10 and U can accurately realize a monitor of laser power with respect to two wavelengths by using one wafer. In addition, a light two For the reference of the polar PD, another amplifier eight 2 is in the working stage, and the differential amplifiers A3 and A4 in the second stage are input from the photodiode PD. The input is from the primary amplifier ai. And the output from the amplifier A2, and find the difference. Based on this, the factor
O:\90\90427.DOC -15- 200414670 光一極體PD之光輸入而導致之電壓變化份予以放大而取 出。 圖3係表不差動放大器A3、A4之具體構成的前述光讀取 凡件21之文光放大電路的電氣電路圖。在該圖3當中，對應 於上述之圖2的部份係賦予相同的參考符號，並省略其說 明。所應留意者係該光讀取元件21能將2個差動放大器A3、 A4的輸出匯整成㈣。具體而言，差動放大器紹系具備差 動對，其係由NPN型之電晶體Q31、Q32所構成。此等之射 極係共通地連接，並中介定電流源F3而接地。 電晶體Q31之基極係形成圖2所示之差動放大器A3的正 輸入端子，且中介輸入電阻Rs31而和初級之放大器ai之輸 出端子相連接，並且中介輸入分壓電阻Rf3丨而施加基準電 壓Vs。此外，電晶體(^32之基極係形成圖2所示之差動放大 器A3的負輸入端子，且中介輸入電阻以”而和參考之放大 裔A2之輸出端子相連接，並且中介反饋電阻尺门2而使輸出 Vout反饋。 同樣地，差動放大器A4係具備差動對，其係*NpN型之 電晶體Q41、Q42所構成。此等之射極係共通地連接，並中 介定電流源F4而接地。電晶體Q41之基極係形成圖】所示之 差動放大器A4的正輸入端子，且中介輸入電阻而和初 級之差動放大器A1之輸出端子相連接，並且中介輸入分壓 電阻Rf41而施加基準電壓¥8。此外，電晶體Q42之基極係 形成圖2所示之差動放大器A4的負輸入端子，且中介輸入電 阻Rs42而和參考之差動放大器八2之輸出端子相連接，並且 O:\90\90427.DOC -16· 200414670 中介反饋電阻Rf42而使輸出Vout反饋。O: \ 90 \ 90427.DOC -15- 200414670 The voltage change caused by the light input of the photodiode PD is amplified and taken out. Fig. 3 shows the electrical circuit diagram of the above-mentioned optical reading circuit of the optical reading device 21 with the specific configuration of the differential amplifiers A3 and A4. In this FIG. 3, parts corresponding to the above-mentioned FIG. 2 are given the same reference numerals, and descriptions thereof are omitted. It should be noted that the optical reading element 21 can integrate the outputs of the two differential amplifiers A3 and A4 into a single unit. Specifically, the differential amplifier has a differential pair, which is composed of NPN type transistors Q31 and Q32. These emitters are connected in common, and are grounded through a fixed current source F3. The base of the transistor Q31 forms the positive input terminal of the differential amplifier A3 shown in FIG. 2, and the intermediate input resistance Rs31 is connected to the output terminal of the primary amplifier ai, and the intermediate input voltage-dividing resistor Rf3 is applied as a reference. Voltage Vs. In addition, the base of the transistor (^ 32) forms the negative input terminal of the differential amplifier A3 shown in Figure 2, and the intermediate input resistance is connected to the output terminal of the reference amplifier A2, and the intermediate feedback resistance scale The output Vout is fed back by the gate 2. Similarly, the differential amplifier A4 is provided with a differential pair, which is composed of * NpN type transistors Q41 and Q42. These emitters are connected in common, and a constant current source is interposed. F4 is grounded. The base of transistor Q41 forms the positive input terminal of the differential amplifier A4 shown in the figure, and the intermediate input resistance is connected to the output terminal of the primary differential amplifier A1, and the intermediate input voltage-dividing resistor Rf41 applies a reference voltage of ¥ 8. In addition, the base of transistor Q42 forms the negative input terminal of differential amplifier A4 shown in FIG. 2, and the intermediate input resistor Rs42 is in phase with the output terminal of reference differential amplifier 8 2 It is connected, and O: \ 90 \ 90427.DOC -16 · 200414670 mediates the feedback resistor Rf42 to make the output Vout feedback.
另一方面，在電晶體Q3 1之集極係中介形成能動負載之 PNP型的電晶體Q33而施加電源電壓Vcc。同樣地，在電晶 體Q42之集極係中介形成能動負載之PNP型的電晶體Q43而 施加電源電壓Vcc。此等之電晶體Q33、Q43係構成電流反 射鏡電路，且電晶體Q33之基極係連接於電晶體Q31的集極 而形成二極體構造。此外，電晶體Q33之集極係連接於對應 於正輸入的前述電晶體Q31和Q41之集極。電晶體Q43之集 極係連接於負輸入側的前述電晶體Q32和Q42之集極。 此外，電晶體Q32、Q42、Q43之各集極係連接於NPN型 之電晶體Q 5之基極’而在電晶體Q 5之集極係施加電源電壓 Vcc，且射極係中介定電流源F5而接地。此等之電晶體Q5 和定電流源F 5係構成射極隨_電路，而形成輸出端之電晶On the other hand, a PNP-type transistor Q33 of an active load is formed in the collector of the transistor Q31, and a power supply voltage Vcc is applied. Similarly, a PNP transistor Q43 of an active load is formed in the collector of the transistor Q42 via an intermediary, and a power supply voltage Vcc is applied. These transistors Q33 and Q43 constitute a current mirror circuit, and the base of transistor Q33 is connected to the collector of transistor Q31 to form a diode structure. In addition, the collector of the transistor Q33 is connected to the collectors of the aforementioned transistors Q31 and Q41 corresponding to the positive input. The collector of transistor Q43 is the collector of the aforementioned transistors Q32 and Q42 connected to the negative input side. In addition, the collectors of the transistors Q32, Q42, and Q43 are connected to the base of the transistor Q5 of the NPN type, and a power supply voltage Vcc is applied to the collector of the transistor Q5, and the emitter is a constant current source. F5 and ground. These transistors Q5 and constant current source F 5 form an emitter follower circuit to form an output transistor.
體Q5之射極係和輸出端子相連接，並且如前述，分別中介 反饋電阻Rf32、Rf42而連接於負輸入侧的電晶體Q32和Q42 之基極。 繼之，藉由對應於波長的切換並以電氣性開關而擇一地 電力激磁定電流電路F3、F4，則即使共用輸出端子，亦能 切換所使用之差動放大器A3和A4，且能適當地補償如前述 之光二極體PD之溫度特性。如此處理，藉由將後級之差動 放大器A3、A4的輸出端子匯整成1個之措施，即能縮小光 讀取元件10、11之晶片尺寸，並且能降低成本。此外，不 僅於此，來自雷射功率監控用受光元件的輸出信號，係能 對複數的雷射波長而自1個之輸出端子而取得。據此，易於 O:\9O\90427.DOC -17- 200414670 進行使田射一極體3驅動之後級的積體電路之信號處理，而 且亦能降低成本。 又’上述之說明係作成Rf31=Rf32=Rf3、Rf41=Rf42= Rf4、Rs31=Rs32=Rs3、Rs4卜Rs42=Rs4，且雖使此等之電 阻的電阻值和溫度特性一致，但亦可使用個別之值。然而， 如岫述藉由使電阻值和溫度特性一致之措施，而使靈敏度 之式能如前述之數丨而簡單地形成。進而以第2級之差動放 大裔A3、A4之輸入電流（進入差動對Q31、Q32 ; Q41、Q42 之基面電流’參閱圖3)，使產生於各電阻化^、Rf4、Rs3、 Rs4的電壓能不依存於溫度而一致，且能補償偏位電壓。 根據圖4和圖5而說明本發明之實施之另外的形態如下。 圖4係表示作為光讀取元件1〇、丨丨而使用之本發明之實施 之另外的形悲之光讀取元件3丨之受光放大電路之電氣性構 成之區塊圖。該光讀取元件31係類似於前述之光讀取元件 2 1，而相對應的部份係賦予相同的參考符號，並省略其說 明。 該光項取元件3 1係其第1級為由具備放大部〇p丨&、輸入電 阻RflO、以及反饋電阻（增益電阻）Rfu而構成之差動放大器 Ala所組成。在放大器部〇pia的正輸入端子係中介輸入電 阻Rfl〇而輸人參考電壓Vref，而在負輸人端子係輸入來自 丽述光二極體PD的電流信號，並且中介亦進行電流_電壓變 換之反饋電阻Rfll而使放大器部〇pu的輸出反饋。偏位電 壓修正用之輸入電阻Rfl0係和反饋電阻Rfu相等而形成。^ 另一方面，650 nm之DVD系用之後級放大器之差動放大The emitter of the body Q5 is connected to the output terminal, and as described above, the feedback resistors Rf32 and Rf42 are respectively connected to the bases of the transistors Q32 and Q42 on the negative input side. Next, by switching the wavelength correspondingly and electrifying the constant current circuits F3 and F4 with electrical switches, even if the output terminals are shared, the differential amplifiers A3 and A4 used can be switched and can be appropriately performed. The ground compensates the temperature characteristics of the photodiode PD as described above. In this way, by integrating the output terminals of the differential amplifiers A3 and A4 at the subsequent stage into one, the wafer size of the optical reading elements 10 and 11 can be reduced, and the cost can be reduced. In addition, not only this, the output signal from the light receiving element for laser power monitoring can be obtained from one output terminal for a plurality of laser wavelengths. According to this, it is easy for O: \ 9O \ 90427.DOC -17- 200414670 to perform the signal processing of the integrated circuit that drives the field emitter 3 to the next stage, and it can also reduce the cost. Also, the above description is made as Rf31 = Rf32 = Rf3, Rf41 = Rf42 = Rf4, Rs31 = Rs32 = Rs3, Rs4, and Rs42 = Rs4, and although the resistance value and temperature characteristics of these resistors are consistent, it can also be used Individual values. However, as described above, by making the resistance value and temperature characteristics consistent, the formula for sensitivity can be easily formed as described above. Furthermore, the input currents of the differential amplifiers A3 and A4 in the second stage (the base currents entering the differential pairs Q31 and Q32; Q41 and Q42 '(see FIG. 3)) are generated in each resistor ^, Rf4, Rs3, The voltage of Rs4 can be consistent without depending on the temperature, and can offset the offset voltage. 4 and 5 illustrate another embodiment of the implementation of the present invention as follows. Fig. 4 is a block diagram showing the electrical configuration of a light-receiving amplifying circuit of a light-sensing light-reading element 3 according to another embodiment of the present invention which is used as the light-reading element 10; The optical reading element 31 is similar to the aforementioned optical reading element 21, and the corresponding parts are given the same reference numerals, and descriptions thereof are omitted. This optical term taking element 31 is a first stage composed of a differential amplifier Ala including an amplifier section opt & input resistance RflO, and a feedback resistance (gain resistance) Rfu. The positive input terminal of the amplifier section opia is interposed with the input resistance Rfl0 to input the reference voltage Vref, and the negative input terminal is input with the current signal from the photodiode PD, and the intermediary also performs the current-voltage conversion. The feedback resistor Rfll feeds back the output of the amplifier unit oop. The input resistance Rfl0 for offset voltage correction is formed equal to the feedback resistance Rfu. ^ On the other hand, the DVD of 650 nm uses differential amplification of the subsequent amplifier
O:\90\90427.DOC -18- 200414670 器A3a，係具備放大器部OP3、偏化電壓修正用之輸入電阻 R311、R321、以及輸出分壓電阻R312、R322而構成。來自 初級放大器之差動放大器A1 a的輸出，係中介相互並列連接 之輸入電阻R311、R321而輸入至放大器部OP3的正輸入端 子。在該放大器部OP3的負輸入端子係中介輸出分壓電阻 R322、R312，而在與基準電壓Vs之間使放大器部OP3的輸 出進行分壓而輸入。 同樣地，780 nm之CD系用之後級放大器之差動放大器 A4a，係具備放大器部OP4、偏位電壓修正用之輸入電阻 R411、R421、以及輸出分壓電阻R412、R422而構成。來自 初級放大器之差動放大器A1 a的輸出，係中介相互並列連接 之輸入電阻R411、R421而輸入至放大器部OP4的正輸入端 子。在該放大器部OP4的負輸入端子係中介輸出分壓電阻 R422、R412，而在與高準位的基準電壓Vs之間使放大器部 OP4的輸出進行分壓而輸入。 在如上述所構成之受光放大電路當中，當作成 R311=R312=R31 、R321 =R322=R32 、R411 =R412=R41 、 R421=R422=R42,且將光二極體PD的變換效率作成；7〔 A/W〕 時，該電路之靈敏度S〔 V/W〕係可由下式表示。文字之31、 32(41、42)係分別來自差動放大器A3、A4之輸出。 ^ = 77xi?/llxO: \ 90 \ 90427.DOC -18- 200414670 A3a is composed of amplifier unit OP3, input resistors R311 and R321 for bias voltage correction, and output voltage divider resistors R312 and R322. The output of the differential amplifier A1 a from the primary amplifier is input resistors R311 and R321 connected in parallel with each other via an intermediary, and is input to the positive input terminal of the amplifier section OP3. The negative input terminal of the amplifier unit OP3 is provided with output voltage-dividing resistors R322 and R312, and the output of the amplifier unit OP3 is divided and inputted with the reference voltage Vs. Similarly, the 780 nm CD is a differential amplifier A4a with a subsequent amplifier, which is composed of an amplifier section OP4, input resistors R411 and R421 for offset voltage correction, and output voltage dividing resistors R412 and R422. The output of the differential amplifier A1 a from the primary amplifier is input resistors R411 and R421 which are connected in parallel with each other via an intermediary, and is input to the positive input terminal of the amplifier section OP4. The negative input terminal of the amplifier unit OP4 is provided with output voltage-dividing resistors R422 and R412, and the output of the amplifier unit OP4 is divided and inputted to a high-level reference voltage Vs. In the light-receiving amplifier circuit constructed as described above, it is regarded as R311 = R312 = R31, R321 = R322 = R32, R411 = R412 = R41, R421 = R422 = R42, and the conversion efficiency of the photodiode PD is made; 7 [ A / W], the sensitivity S [V / W] of the circuit can be expressed by the following formula. The characters 31 and 32 (41, 42) are the outputs from the differential amplifiers A3 and A4, respectively. ^ = 77xi? / Llx
\ , i?32(42)N I i?31(41)J 因此，靈敏度之微分溫度係數（3S/3T)/S係形成下式。\, i? 32 (42) N I i? 31 (41) J Therefore, the differential temperature coefficient (3S / 3T) / S of the sensitivity forms the following formula.
R32(42) + i?31(41) + i?32(42)X f dR32(42)/ dR31(41)/R32 (42) + i? 31 (41) + i? 32 (42) X f dR32 (42) / dR31 (41) /
/dT__/dT R32(42) i?31(41) v O:\90\90427.DOC -19- 200414670 因此，靈敏度s之溫度係數係形成 (S之溫度係數）〔ppm/°c〕=(；；之溫度係數）+(Rfu之溫度 係數）+{(R32(42)之溫度係數）-(R31(41)之溫度係數）} X R32(42)/{R31(41)+R32(42)} 因此，藉由適應於光二極體PD之變換效率7的溫度係數 之情況而分別設定電阻R31、R32 ; R41、R42的溫度係數之 措施’在650疆和780疆之2個波長當中，均能使靈敏度3 的溫度係數成為零。 例如’和受光放大電路相同地，光二極體PD的變換效率 ^7之溫度係數，係具有650 nm的波長為2〇〇〔 ppmrc〕、78〇nm 為2000〔 PPm/°C〕之值時，由溫度係數為500〔 ρρπι/ι〕之 擴散電阻而形成反饋電阻Rfl 1和電阻R32，並由溫度係數為 1900〔 ppm/ C〕之擴散電阻而形成電阻R3 1，而且相互相等 地設定電阻R31、R32的電阻值。據此，由於來自該波長為 650nm之DVD系用輸出的差動放大器A3a之輸出係如下式 所表示，故能使靈敏度之溫度特性成為零。 (S之溫度係數）〔ppm/°C〕 = 200 + 500+R32/(R31+R32)x(500-1900)=0 此外，對780 nm的波長係例如由溫度係數為50〇〔 ppm/ °C〕之擴散電阻而形成反饋電阻Rfll和電阻R42,並由溫度 係數為3500〔 ppm/°C〕之擴散電阻而形成電阻R41，且分別 將電阻R41、R42之電阻值設定為1〔 kfi〕、5〔 kQ〕。據此， 由於來自該波長為780 nm之CD系用輸出的差動放大器A4a 之輸出係如下式所表示，故能使靈敏度之溫度特性成為零。 O:\90\90427.DOC -20- 200414670 (S之溫度係數）〔ppm/°c〕 =2000 + 500 + 5/( l + 5)x(500-3 500)=0 此外，即使組合多晶矽電阻和擴散電阻，亦能實現不依 存於波長之靈敏度的溫度係數為零之受光放大電路。例 如，對650 nm的波長係由溫度係數為-1000〔 ppm/°C〕之多 晶矽電阻而形成反饋電阻Rfll，且由溫度係數為-800〔 ppm/ t：〕之多晶矽電阻而形成電阻R3 1，並由溫度係數為800 〔ppm/°C〕之擴散電阻而形成電阻R32，而且相互相等地設 定電阻R31、R32。據此，由於來自該波長為650 nm之DVD 使、 系用輸出的差動放大器A3 a之輸出係如下式所表示，故能使 靈敏度之溫度特性成為零。 (S之溫度係數）〔ppm/°C〕 =200 + (-1000)+R32/(R31+R3 2) x{ (800-(-800) ) =0 此外，對780 nm的波長亦例如設定反饋電阻Rfll為-1000 〔ppm/°C〕之多晶矽電阻，且設定電阻R41為溫度係數為500 〔ppm/°C〕之擴散電阻，並設定電阻R42為溫度係數為-1500 " 〔ppm/°C〕之多晶石夕電阻，而且相互相等地設定電阻R41、 ’ R42之電阻值。據此，由於來自該波長為780 nm之CD系用 輸出之差動放大器A4a的輸出係如下式所表示，故能使靈敏 度之溫度特性成為零。 (S之溫度係數）〔ppm/°C〕 = 2000 + (-1000)+R42/(R41+R42) x{(-1500)-500 }=0 O:\9O\90427.DOC -21 - 200414670 此外，即使未使用前述擴散電阻，而僅由溫度係數相異 之多晶矽電阻而構成電路，亦能實現溫度特性成為零之受 光放大電路。 例如，對650 nm的波長，設定溫度係數為-1〇〇〇〔卯心 C〕之多晶矽電阻為反饋電阻Rfll，並分別設定溫度係數 為-2100〔 ppm/C〕和巧⑽〔ppm/Qc〕之多晶矽電阻為電阻 R31、R32，而且相互相等地設定電阻R31、R32之電阻值。 據此，由於來自該波長為65〇 nmiDVD系用輸出之差動放 大器A3a的輸出係如下式所表示，故能使靈敏度之溫度特性 成為零。 (S之溫度係數）〔ppm/°c〕 =200 + (. l〇〇〇)+R32/(R31+R32) x{_500_(_2100) }=〇 此外，對780 nm的波長，亦例如設定溫度係數為_1〇〇〇 〔ppm/ C〕之多晶矽電阻為反饋電阻Rf丨丨，並分別設定溫 度係數為-500〔 ppm/°C〕和—2〇〇〇〔 ppm/Qc〕之多晶矽電阻 為電阻R41、R42，而且分別設定電阻尺41、R42之電阻值為 1〔 kQ〕、2〔 kQ〕。據此，由於來自該波長為78〇咖之⑶ 系用輸出之差動放大器A4a的輸出係如下式所表示，故能使 靈敏度之溫度特性成為零。 (S之溫度係數）〔ppm/°c〕 =2000 + (-1 〇〇0)+2/(1+2)x {-2000-(-500)卜 〇 圖5係表示差動放大器A3a、人牦之具體構成的光讀取元 件31之受光放大電路之電氣電路圖。在該圖5當中，對應於/ dT __ / dT R32 (42) i? 31 (41) v O: \ 90 \ 90427.DOC -19- 200414670 Therefore, the temperature coefficient of sensitivity s is formed (temperature coefficient of S) [ppm / ° c] = ( ;; temperature coefficient) + (temperature coefficient of Rfu) + {(temperature coefficient of R32 (42))-(temperature coefficient of R31 (41))} X R32 (42) / {R31 (41) + R32 (42 )} Therefore, by adapting to the temperature coefficient of the conversion efficiency 7 of the photodiode PD, the measures of setting the temperature coefficients of the resistors R31 and R32; the temperature coefficients of R41 and R42 are in the two wavelengths of 650 and 780, Both can make the temperature coefficient of sensitivity 3 zero. For example, 'The temperature coefficient of the conversion efficiency of the photodiode PD ^ 7 is the same as that of the light-receiving amplifier circuit, when the wavelength of 650 nm is 200 [ppmrc], and the value of 78 nm is 2000 [PPm / ° C]. , The feedback resistance Rfl 1 and the resistance R32 are formed by a diffusion resistance with a temperature coefficient of 500 [ρρπι / ι], and the resistance R3 1 is formed by the diffusion resistance with a temperature coefficient of 1900 [ppm / C], and the resistances are set equal to each other Resistance values of R31 and R32. Accordingly, since the output of the differential amplifier A3a from the DVD-based output with a wavelength of 650 nm is expressed by the following formula, the temperature characteristic of the sensitivity can be made zero. (Temperature coefficient of S) [ppm / ° C] = 200 + 500 + R32 / (R31 + R32) x (500-1900) = 0 In addition, for a wavelength system of 780 nm, for example, the temperature coefficient is 50 ° [ppm / ° C] diffusion resistance to form the feedback resistance Rfll and resistance R42, and a diffusion resistance with a temperature coefficient of 3500 [ppm / ° C] to form resistance R41, and the resistance values of resistors R41 and R42 are set to 1 [kfi ], 5 [kQ]. Accordingly, since the output of the differential amplifier A4a from the CD-based output with a wavelength of 780 nm is expressed by the following formula, the temperature characteristic of the sensitivity can be made zero. O: \ 90 \ 90427.DOC -20- 200414670 (temperature coefficient of S) [ppm / ° c] = 2000 + 500 + 5 / (l + 5) x (500-3 500) = 0 In addition, even when combined with polycrystalline silicon The resistance and the diffusion resistance can also realize a light-receiving amplifier circuit with a temperature coefficient of zero that does not depend on wavelength sensitivity. For example, for a wavelength of 650 nm, the feedback resistance Rfll is formed by a polycrystalline silicon resistor having a temperature coefficient of -1000 [ppm / ° C], and the resistance R3 is formed by a polycrystalline silicon resistor having a temperature coefficient of -800 [ppm / t:] The resistance R32 is formed by a diffusion resistance having a temperature coefficient of 800 [ppm / ° C], and the resistances R31 and R32 are set equal to each other. Accordingly, since the output of the differential amplifier A3a from the DVD amplifier with a wavelength of 650 nm is expressed by the following formula, the temperature characteristic of the sensitivity can be made zero. (Temperature coefficient of S) [ppm / ° C] = 200 + (-1000) + R32 / (R31 + R3 2) x {(800-(-800)) = 0 In addition, for a wavelength of 780 nm, for example, set The feedback resistance Rfll is a polycrystalline silicon resistance of -1000 [ppm / ° C], and the setting resistance R41 is a diffusion resistance with a temperature coefficient of 500 [ppm / ° C], and the resistance R42 is set to a temperature coefficient of -1500 " [ppm / ° C], and the resistance values of resistors R41 and R42 are set equal to each other. Accordingly, since the output of the differential amplifier A4a from the CD-system output having a wavelength of 780 nm is expressed by the following equation, the temperature characteristic of the sensitivity can be made zero. (Temperature coefficient of S) [ppm / ° C] = 2000 + (-1000) + R42 / (R41 + R42) x {(-1500) -500} = 0 O: \ 9O \ 90427.DOC -21-200414670 In addition, even if the circuit is constructed using only polycrystalline silicon resistors having different temperature coefficients without using the aforementioned diffusion resistor, a light-receiving amplifier circuit with zero temperature characteristics can be realized. For example, for a wavelength of 650 nm, set the polycrystalline silicon resistor with a temperature coefficient of -1 00 [卯 心 C] as the feedback resistor Rfll, and set the temperature coefficients to -2100 [ppm / C] and Qiao⑽ [ppm / Qc The polysilicon resistors are resistors R31 and R32, and the resistance values of the resistors R31 and R32 are set equal to each other. Accordingly, since the output from the differential amplifier A3a having a wavelength of 65 nm for the iDVD system is expressed by the following formula, the temperature characteristic of the sensitivity can be made zero. (Temperature coefficient of S) [ppm / ° c] = 200 + (. L00〇〇) + R32 / (R31 + R32) x {_500 _ (_ 2100)} = 〇 In addition, for a wavelength of 780 nm, for example, set The polycrystalline silicon resistor with a temperature coefficient of 10000 [ppm / C] is the feedback resistance Rf 丨 丨, and the polycrystalline silicon with temperature coefficients of -500 [ppm / ° C] and -200 [ppm / Qc] are set, respectively. The resistors are resistors R41 and R42, and the resistance values of the resistance scales 41 and R42 are set to 1 [kQ] and 2 [kQ], respectively. Accordingly, the output from the differential amplifier A4a of the CD system output with a wavelength of 78 nm is expressed by the following equation, so that the temperature characteristic of the sensitivity can be made zero. (Temperature coefficient of S) [ppm / ° c] = 2000 + (-1 〇00) + 2 / (1 + 2) x {-2000-(-500). Figure 5 shows the differential amplifier A3a, The electric circuit diagram of the light receiving amplifier circuit of the optical reading element 31 specifically constituted by a human being. In FIG. 5, it corresponds to
O:\90\90427.DOC -22- 200414670 别述圖3的部份係賦予相同之炎老 邳U您筝考付唬，並省略其說明。該 光讀取元㈣係在㈣差動放大^从當^放大器 部OP3、OP4係和前述的差動放大器八3、A4同樣地構成， 且輸出係匯整成1個。 在差動放大器A3a當中，電晶體Q31之基極係形成圖4所 不之差動放大HA3a之正輸人端子’且中介偏位電麼修正用 ^輸入電阻R311、R321而和初級之差動放大器Α1&的輸出 端子相連接。另—方面，電晶體⑽之基極係形成圖4所示 之差動放大器A3a之負輸人端子，且中介輸出分壓電阻 則而供應基準電MVs，並且中介輪出分壓電阻R322而使 輸出Vout反饋。 同樣地，在差動放大器A4a當中，電晶體Q41之基極係形 成圖4所示之差動放大器A4a的正輸入端子，且中介偏位電 壓修正用之輸入電阻R4U、以21而和初級之差動放大器 Ala之輸出端子相連接。另一方面，電晶體Q42之基極係形 成圖4所示之差動放大器A4a之負輸入端子，且中介輸出分 壓電阻R412而供應基準電壓^，並且中介輸出分壓電I R422而使輸出Vout反饋。 繼之，藉由對應於波長的切換並以電氣性開關而擇一地 電力激磁定電流電路F3、F4。據此，即使共用輸出端子， 亦能切換所使用之差動放大器A3a和A4a，且能適當地補償 如前述之光二極體PD之溫度特性。如此處理，即能將後級 之差動放大器A3 a、A4a之輸出端子匯整成1個。 又，決定差動放大器A3a、A4a的溫度特性者係分壓電阻 O:\90\90427.DOC -23- 200414670 R312、R322 ; R412、R422，輸入電阻R311、R321 ; R4U、 R421係和前述溫度特性無關，而其溫度特性係任意之值均 可。然而，如前述，作成R31卜R312=R3卜R321==R3m32、 R411=R412=R41、R421=R422=R42，而使電阻值和溫度特 性一致。據此，和差動放大器A3、A4相同地，以差動放大 器A3 a、A4a之輸入電流而使產生於各電阻R3丨、R32 ; R4丨、 R42的電壓能不依存於溫度而一致，而能補償偏位電壓。 根據圖6而說明有關於本發明之實施之更另外的形態如 下。 圖6係表示作為光讀取元件1〇、丨丨而使用之本發明之實施 的更另外之形態的光讀取元件41之受光放大電路之電氣性 構成之區塊圖。該光讀取元件41係類似於前述之光讀取元 件21，其相對應之部份係賦予相同的參考符號，並省略其 說明。所應注意者係該光讀取元件41中，其第1級係由將來 自光二極體PD的電流信號變換成電壓信號之放大器a ib、 以及參考用之另1個之第1級的放大器A2b所構成，而第2級 係輸入來自此等之放大器Alb、A2b的輸出，且由求得此等 之差份的1個之差動放大器A5所構成。 放大A1 b係具備放大器部〇p 1、2個反饋電阻（增益電 阻）Rf 11、Rf 12、以及用以擇一地將此等之反饋電阻Rf 11、 Rfl2使用於反饋用的開關元件SW1而構成。同樣地，放大 器A2b亦具備放大器部〇P2、2個反鑛電阻Rf21、Rf22、以 及用以擇一地將此等之反饋電阻Rf21、Rf22使用於反饋用 的開關元件SW2而構成。 O:\90\90427.DOC -24- 200414670 差動放大器A5係具備放大器部OP5、2個之輸入電阻 Rs51、Rs52、輸入分壓電阻Rf51、以及反饋電阻Rf52而構 成。在放大器部OP5的正輸入端子係中介輸入電阻Rs5 1和 輸入分壓電阻Rf51，而在與基準電壓Vs之間使來自放大器 A lb的輸出進行分壓而輸入。在放大器部OP5之負輸入端子 係中介輸入電阻Rs52而輸入來自放大器A2b的輸出，並且中 介反饋電阻Rf52而使該放大器部OP5的輸出反饋。O: \ 90 \ 90427.DOC -22- 200414670 In addition, the part shown in Figure 3 is given to the same old man. You will pay for the test and omit its explanation. The optical readout unit is configured in a differential amplifier, and the amplifier units OP3 and OP4 are the same as the aforementioned differential amplifiers 8 and A4, and the output system is integrated into one. In the differential amplifier A3a, the base of the transistor Q31 forms the positive input terminal of the differential amplifier HA3a as shown in FIG. 4 and the intermediate bias voltage is used to correct the input differential resistors R311 and R321 and the primary differential. The output terminals of the amplifier A1 & are connected. On the other hand, the base of the transistor 形成 forms the negative input terminal of the differential amplifier A3a shown in Figure 4, and the intermediate output voltage dividing resistor supplies the reference electric MVs, and the intermediate wheel outputs the voltage dividing resistor R322 to make Output Vout feedback. Similarly, in the differential amplifier A4a, the base of the transistor Q41 forms the positive input terminal of the differential amplifier A4a shown in FIG. 4, and the input resistor R4U for the intermediate offset voltage correction is 21 and the primary The output terminals of the differential amplifier Ala are connected. On the other hand, the base of the transistor Q42 forms the negative input terminal of the differential amplifier A4a shown in FIG. 4, and the intermediate output voltage divider resistor R412 supplies the reference voltage ^, and the intermediate output divides the piezoelectric voltage I R422 to make the output Vout feedback. Next, the constant current circuits F3 and F4 are selectively excited by electric switching in accordance with the switching of the wavelength. Accordingly, even if the output terminals are shared, the differential amplifiers A3a and A4a used can be switched, and the temperature characteristics of the photodiode PD as described above can be appropriately compensated. In this way, the output terminals of the differential amplifiers A3 a and A4a in the subsequent stage can be integrated into one. In addition, those who determine the temperature characteristics of the differential amplifiers A3a and A4a are voltage dividing resistors O: \ 90 \ 90427.DOC -23- 200414670 R312, R322; R412, R422, input resistors R311, R321; R4U, R421 series and the aforementioned temperature The characteristics are irrelevant, and the temperature characteristics are arbitrary. However, as described above, R31, R312 = R3, R321 == R3m32, R411 = R412 = R41, R421 = R422 = R42, and the resistance value and temperature characteristics are consistent. Accordingly, as with the differential amplifiers A3 and A4, the input currents of the differential amplifiers A3a and A4a are used to make the voltages generated in the respective resistors R3 丨, R32; R4 丨, R42 can be consistent without depending on the temperature, but Can compensate offset voltage. A further embodiment related to the implementation of the present invention will be described with reference to Fig. 6 as follows. Fig. 6 is a block diagram showing the electrical configuration of a light-receiving amplifier circuit of a light-reading element 41 according to still another embodiment of the present invention, which is used as the light-reading elements 10 and 丨. The optical reading element 41 is similar to the aforementioned optical reading element 21, and the corresponding parts are given the same reference symbols, and descriptions thereof are omitted. It should be noted that the first stage of the optical reading element 41 is an amplifier a ib that converts a current signal from the photodiode PD into a voltage signal, and another one of the first stage amplifiers for reference. A2b is constituted, and the second stage is constituted by a differential amplifier A5 which receives the output from these amplifiers Alb and A2b and obtains one of these differences. Amplifier A1 b is provided with an amplifier unit oop 1, two feedback resistors (gain resistors) Rf 11, Rf 12, and feedback resistors Rf 11, Rfl2 for selectively using these feedback elements SW1, and Make up. Similarly, the amplifier A2b also includes an amplifier section OP2, two anti-mineral resistances Rf21 and Rf22, and a feedback switching element SW2 for selectively using these feedback resistors Rf21 and Rf22. O: \ 90 \ 90427.DOC -24- 200414670 The differential amplifier A5 is composed of an amplifier section OP5, two input resistors Rs51, Rs52, an input voltage dividing resistor Rf51, and a feedback resistor Rf52. The positive input terminal of the amplifier section OP5 is interposed between the input resistor Rs51 and the input voltage-dividing resistor Rf51, and the output from the amplifier A lb is divided and inputted from the reference voltage Vs. The negative input terminal of the amplifier unit OP5 is an input from the amplifier A2b via an input resistor Rs52, and an output of the amplifier unit OP5 is fed back via an intermediate resistor Rf52.
在如上述所構成之光讀取元件41當中，反饋電阻Rfll、 Rfl2、以及反饋電阻Rf21、Rf22，係例如藉由擴散電阻等 而以互為相同之溫度特性（薄膜電阻值）且形成於相同之電 阻值。該受光放大電路41之靈敏度S〔 V/W〕係作成 Rf51=Rf52=Rf5、Rs51=Rs52=Rs5，並將光二極體PD之變換 效率作成/7〔 A/W〕時，係可由下式表示。 *S = 77x(i?/ll^/12)x^In the optical reading element 41 configured as described above, the feedback resistors Rf11, Rfl2, and feedback resistors Rf21, Rf22 have, for example, the same temperature characteristics (thin film resistance values) and are formed at the same temperature with each other through a diffusion resistance or the like. The resistance value. When the sensitivity S [V / W] of the light receiving amplifier circuit 41 is made as Rf51 = Rf52 = Rf5, Rs51 = Rs52 = Rs5, and the conversion efficiency of the photodiode PD is made as / 7 [A / W], it can be obtained by the following formula Means. * S = 77x (i? / Ll ^ / 12) x ^
Rs5 其中，Rfll或Rfl2係表示根據開關元件SW1、SW2而使用Rs5 Among them, Rfll or Rfl2 is used according to the switching elements SW1 and SW2
其一方。 因此，靈敏度之溫度係數（3S/dT)/S係如下式所表示。Its party. Therefore, the temperature coefficient of sensitivity (3S / dT) / S is expressed by the following formula.
因此，靈敏度S之溫度係數係如下所表示。 (S之溫度係數）〔ppm/°c〕 =(7；之溫度係數）+(Rf 11或Rf 12之溫度係數） + (Rf5之溫度係數）-(Rs5之溫度係數） 亦即，反饋電阻Rf 11、Rf 12、以及反饋電阻Rf5係形成作 O:\90\90427.DOC -25- 200414670 用於和光二極體PD相同極性之溫度特性，而輸入電阻Rs5 係形成作用於和光二極體PD相反極性之溫度特性。Therefore, the temperature coefficient of the sensitivity S is expressed as follows. (Temperature coefficient of S) [ppm / ° c] = (temperature coefficient of 7) + (temperature coefficient of Rf 11 or Rf 12) + (temperature coefficient of Rf5)-(temperature coefficient of Rs5) That is, the feedback resistance Rf 11, Rf 12, and feedback resistor Rf5 are formed as O: \ 90 \ 90427.DOC -25- 200414670 for the temperature characteristics of the same polarity as the photodiode PD, and the input resistance Rs5 is formed to act on the photodiode. Temperature characteristics of PD with opposite polarity.
因此，例如將光二極體PD之變換效率？7之溫度係數，如 上述而作成射入光的波長650 nm為200〔 ppm/°C〕、780 nm 為 2000〔 ppm/°C〕時，例如分別由 500〔 ppm/°C〕、3000〔 ppm/ °C〕之擴散電阻而形成電阻Rf5、Rs5,並由溫度係數為2300 〔ppm/°C〕之擴散電阻而形成反饋電阻Rf 11，且由溫度係 數為500〔 ppm/°C〕之擴散電阻而形成反饋電阻Rfl2。繼之， 若選擇反饋電阻Rf 11於波長為650 nm之DVD系用輸出時， 即能如下式使靈敏度之溫度特性成為零。 (S之溫度係數）〔ppm/〇C〕=200+2300 + 500-3000 = 0 此外，若選擇反饋電阻Rf 12於780 nm之CD系用輸出時， 即能如下式使靈敏度之溫度特性成為零。 (S之溫度係數）〔ppm/°C〕 =2000+500+500-3000=0So, for example, the conversion efficiency of photodiode PD? When the temperature coefficient of 7 is as described above, when the wavelength of incident light is 200 [ppm / ° C] at 650 nm and 2000 [ppm / ° C] at 780 nm, for example, 500 [ppm / ° C], 3000 [ ppm / ° C] diffusion resistance to form resistances Rf5, Rs5, and a diffusion resistance with a temperature coefficient of 2300 [ppm / ° C] to form feedback resistance Rf 11, and a temperature coefficient of 500 [ppm / ° C] The resistance is diffused to form the feedback resistance Rfl2. Next, if the feedback resistor Rf 11 is selected for a DVD-based output with a wavelength of 650 nm, the temperature characteristic of the sensitivity can be made zero as follows. (Temperature coefficient of S) [ppm / 〇C] = 200 + 2300 + 500-3000 = 0 In addition, if the output of CD system with feedback resistance Rf 12 at 780 nm is selected, the temperature characteristic of sensitivity can be made as follows zero. (Temperature coefficient of S) [ppm / ° C] = 2000 + 500 + 500-3000 = 0
如此處理，藉由因應於射入光的波長而切換反饋電阻 Rfll和Rfl2之措施，則能不依存於前述波長而使受光放大 電路41的輸出之溫度特性成為零。 此外，如前述，即使組合具有負的溫度係數之多晶矽電 阻和擴散電阻，亦能使光讀取元件整體之溫度特性成為 零。例如，對650 nm的波長係分別由溫度係數為500〔 ppm/ °C〕、1000〔 ppm/°C〕之擴散電阻而形成電阻Rf51、Rs51， 且由溫度係數為300〔 ppm/°C〕之擴散電阻而形成反饋電阻 Rfl 1。據此，能如下式而使靈敏度之溫度特性成為零。 O:\90\90427.DOC -26- 200414670 (S 之溫度係數）〔ppm/aC〕=2〇〇 + 3〇〇 + 5〇〇1〇〇〇 = 〇 此外，對780 nm的波長係由溫度係數為_l5〇〇〔沖〕 之多晶矽電阻而形成反饋電阻Rfl2。據此，如下式而使靈 敏度之溫度特性成為零。 (S之溫度係數）〔ppm/t:〕 =2000+(-1500) + 500-1 〇〇〇=〇 此外，即使未使用前述擴散電阻，而僅由溫度係數相異 之多晶矽電阻而構成電路，亦能實現溫度特性成為零之受 光放大電路。例如對650 nm的波長，係分別由_5〇〇〔卯― C〕、-1000〔ppm/°c〕之多晶矽電阻而形成電阻Rf5卜Rs5i， 且由溫度係數為-700〔ppm/t〕之多晶矽電阻而形成反饋 電阻Rfll。據此，如下式而使靈敏度之溫度特性成為零。 (S之溫度係數）〔ppm/°C〕 =200 + (-700)+(-500)-(-1000)=0 此外，對780 nm的波長，係由溫度係數為-25〇〇〔卯— C〕之多晶矽電阻而形成反饋電阻Rfl2。據此，如下式而 使靈敏度之溫度特性成為零。 (s之溫度係數）〔ppm/°C〕 =2000 + (-2500) + (-500)-(.1〇〇〇)=〇 上述之說明係第1級之放大器A1、A2 ; Au、Aib、以及 第2級之差動放大器A3、A4; A3a、仏；八5之2級的構成。 然而，為了獲得期望的靈敏度、或為了獲得期望之極性的 輸出（為了選擇較多往光二極體PD的射入光量、輸出電壓較 南之正輸出以及較低之負輸出），亦可使用3級以上之放In this way, by changing the feedback resistors Rf11 and Rfl2 according to the wavelength of the incident light, the temperature characteristics of the output of the light receiving amplifier circuit 41 can be made zero without depending on the aforementioned wavelength. In addition, as described above, even if a polycrystalline silicon resistor and a diffusion resistor having a negative temperature coefficient are combined, the temperature characteristic of the entire optical reading element can be made zero. For example, for a wavelength of 650 nm, the resistances Rf51 and Rs51 are formed by diffusion resistances with temperature coefficients of 500 [ppm / ° C] and 1000 [ppm / ° C], respectively, and the temperature coefficient is 300 [ppm / ° C] The diffusion resistance forms the feedback resistance Rfl1. According to this, the temperature characteristic of sensitivity can be made zero by the following formula. O: \ 90 \ 90427.DOC -26- 200414670 (temperature coefficient of S) [ppm / aC] = 2 00+ 3〇〇 + 5〇〇〇〇〇〇〇 = 〇 In addition, the wavelength of 780 nm is determined by A polysilicon resistor with a temperature coefficient of -1550 [impulse] forms a feedback resistor Rfl2. Accordingly, the temperature characteristic of the sensitivity is made zero by the following formula. (Temperature coefficient of S) [ppm / t:] = 2000 + (-1500) + 500-1 〇〇〇 ＝ 〇 In addition, even if the aforementioned diffusion resistance is not used, the circuit is constituted only by polycrystalline silicon resistances with different temperature coefficients. , Can also achieve the temperature characteristics of the light receiving amplifier circuit becomes zero. For example, for a wavelength of 650 nm, the resistances Rf5 and Rs5i are formed by polycrystalline silicon resistors of -500 [〇-C] and -1000 [ppm / ° c], respectively, and the temperature coefficient is -700 [ppm / t] The polysilicon resistor forms a feedback resistor Rfll. Accordingly, the temperature characteristic of the sensitivity is made zero by the following expression. (Temperature coefficient of S) [ppm / ° C] = 200 + (-700) + (-500)-(-1000) = 0 In addition, for a wavelength of 780 nm, the temperature coefficient is -25〇〇 [卯— C] polycrystalline silicon resistor to form the feedback resistor Rfl2. Accordingly, the temperature characteristic of the sensitivity is made zero by the following expression. (temperature coefficient of s) [ppm / ° C] = 2000 + (-2500) + (-500)-(. 10000) = 〇 The above description is the first-stage amplifiers A1, A2; Au, Aib And the second-stage differential amplifiers A3, A4; A3a, 仏; eight-five-two-stage configuration. However, in order to obtain the desired sensitivity, or to obtain the output of the desired polarity (in order to choose more amount of incident light to the photodiode PD, a positive output with a lower south output voltage and a lower negative output), 3 Above the level
O:\90\90427.DOC - 27- 200414670 大器。 如上述，本實施形態之受光放大電路，係在將來自複數 種類的波長之光信號所射入之受光元件的信號予放大而輸 出之受光放大電路當中，由下列所形成：初級放大器之反 饋電阻，其係輸入來自前述受光元件的信號；以及電阻體， 其係具有使決定次級以後的放大器之靈敏度的電阻之至少 一部份互為相異之溫度特性；並因應於前述光信號的波長 種類而切換前述電阻體。 具體而言，例如780 nm和650 nm，在將來自複數種類的 波長之光信號所射入之受光元件的信號予以放大而輸出之 文光放大電路當中，僅設置前述波長的種類之反饋電阻（增 益電阻）於初級放大器，其係輸入來自受光元件的信號，而 在次級以後，係僅設置前述波長的種類之放大器，其係具 備決定輸入電阻或反饋電阻等的靈敏度之電阻。進而以具 有互為相異之溫度特性的方式，而形成電阻之至少的一部 伤之私阻體，其係決定前述初級放大器的反饋電阻或次級 以後之放大器中的靈敏度，且因應於前述光信號之波長的 種類而切換所使用的反饋電阻或放大器等，而切換前述電 阻體。 匕之故，即使因波長的變化而導致受光元件的靈敏度 之/皿度特產生變化，亦能藉由使用電阻體，其係具有適 :於各個波長的溫度特性之溫度特性，而能以該受：放大 電路之溫度特性而消除前述受光元件的溫度特性。 此外，本實施形態之受光放大電路’其在第2級係對應於O: \ 90 \ 90427.DOC-27- 200414670. As described above, the light-receiving amplifying circuit of this embodiment is formed in the light-receiving amplifying circuit that amplifies and outputs the signal from the light-receiving element into which optical signals of a plurality of types of wavelengths are input, and is formed by the feedback resistance of the primary amplifier , Which inputs signals from the aforementioned light-receiving element; and resistors, which have temperature characteristics that make at least part of the resistors that determine the sensitivity of the amplifier after the secondary different from each other; and according to the wavelength of the aforementioned optical signal The type of the resistor is switched. Specifically, for example, 780 nm and 650 nm, in a text optical amplifier circuit that amplifies and outputs a signal from a light-receiving element into which a light signal of a plurality of types of wavelengths is amplified, only a feedback resistor of the aforementioned wavelength type is provided ( Gain resistor) is a primary amplifier that inputs a signal from a light-receiving element. After the secondary amplifier, it is an amplifier with only the types of the aforementioned wavelengths. It has a resistor that determines the sensitivity of the input resistance or feedback resistance. Furthermore, in a manner having mutually different temperature characteristics, forming at least a part of the private resistance body of the resistance, it determines the feedback resistance of the aforementioned primary amplifier or the sensitivity in the amplifier after the secondary, and is based on the foregoing The type of the wavelength of the optical signal is switched by a feedback resistor, an amplifier, or the like used, and the resistor is switched. Therefore, even if the sensitivity of the light-receiving element is changed due to a change in wavelength, a resistor can be used, which has a temperature characteristic suitable for the temperature characteristics of each wavelength. Accepted: The temperature characteristics of the amplifying circuit eliminate the temperature characteristics of the aforementioned light receiving element. The light-receiving amplifier circuit of this embodiment corresponds to the second stage.
O:\90\90427.DOC -28 - 200414670 月ί，複數種一的各波長而設置差動放大器，且在各差動放 大。°之間作成決定前述靈敏度之電阻，並設定成輸入電 ^和反績電阻的溫度特性互為相異，且來自前述初級放大 益的輸出係共通地輸入於該複數的第2級之差動放大器，而 能藉由切換❹輪出的第2級之差動放大器，而實現前述電 阻體之切換。 奴根據上述之構成，藉由切換使用輸出的第2級之差動放大 口口而施具體地實現如前述之溫度特性相異之電阻體的切 換。 此外’本實施形態之受光放大電路中，理想上係在前述 减並未連接著前述受光元件，而且具備參考用之Ρ個放 大益’其係和前述初級放大器相同地構成，而在第2級之各 差動放大器係輸人來自前述初級放大器的輸出和來自前述 另1個放大器的輸出，並求得此等之差份。 根據上述之構成，能僅取出往受光元件的光輸入而產生 之信號成份。 此外，本實施形態之受光放大電路中，理想上係在第2 級為對應於前述複數種類的各波長而設置差動放大器，且 在各差動放大ϋ之間，作成決定前述錄度之電阻，並設 =成在和狀輸出的基準電屢之間進行分壓而反饋之分^ 電阻的温度特性互為相異，且來自前述初級放大器的心 係共通地輸入於該複數的第2級之差動放大器，並藉由切換 使用輸出的第2級之差動放大器，而實現前述電阻' 換0O: \ 90 \ 90427.DOC -28-200414670. Differential amplifiers are provided for each of a plurality of wavelengths and amplified at each differential. The resistance that determines the sensitivity is made between °, and the temperature characteristics of the input resistor and the reverse resistance are set to be different from each other, and the output from the primary amplification gain is commonly input to the second-stage differential of the complex number. The amplifier can switch the resistor of the second stage by switching the second stage differential amplifier. According to the above-mentioned configuration, the second-stage differential amplification port of the use output is switched to specifically realize the switching of the resistors having different temperature characteristics as described above. In addition, "the light-receiving amplifier circuit of this embodiment is ideally connected to the aforesaid minus without connecting the light-receiving element and having P amplification benefits for reference", which is the same as the primary amplifier and is in the second stage Each of the differential amplifiers receives the output from the primary amplifier and the output from the other amplifier, and obtains the difference. According to the above configuration, it is possible to extract only the signal components generated by the optical input to the light receiving element. In addition, in the light-receiving amplifying circuit of this embodiment, it is desirable that a differential amplifier is provided at the second stage to correspond to each of the plurality of types of wavelengths described above, and between each of the differential amplifiers, a resistor for determining the recording degree is made. And set = to divide the feedback between the reference output of the sum output and divide the feedback ^ The temperature characteristics of the resistors are different from each other, and the core system from the aforementioned primary amplifier is commonly input to the second level of the complex The differential amplifier of the second stage is switched by using the output differential amplifier of the second stage, so that the above-mentioned resistance is changed to 0.
O:\90\90427.DOC -29- 200414670 抑根據上述之構成’藉由切換使用輸出的第2級之差動放大 器’而能具體地實現如前述之溫度特性相異之電阻體之切 換。 此外，本實施形態之受光放大電路中，理想上係前述信 號的波長為2種類，而前述第2級之差動放大器係設置2組， 且具備分別供應電流於構成差動對之一對的電晶體以及該 差動對的定電流源而構成，而輸出側之電晶體係共通地連 接於輸出級，並對應於前、、由E . χ. 應於則述波長的切換而使相對應側之差 動放大㈣定電流源產生能動化，且使另—方之差動放大O: \ 90 \ 90427.DOC -29- 200414670 In accordance with the above-mentioned configuration, ‘the second-stage differential amplifier using the output is switched’, and the switching of the resistors with different temperature characteristics as described above can be realized concretely. In addition, in the light-receiving amplifier circuit of this embodiment, ideally, the wavelength of the aforementioned signal is two types, and the aforementioned second-stage differential amplifier is provided with two sets, and each has a pair of current supplies for each pair constituting a differential pair. The transistor and the constant current source of the differential pair are formed, and the transistor system on the output side is connected to the output stage in common, and corresponds to the front and rear E. χ. Differential amplification on one side can be activated by a constant current source, and the other side can be differentially amplified.
Is的定電流源產生不能動化。 根據上述之構成，第2級之差動放大器係連接於i個之輸 出端，且對應於波長的切換而切換僅使定電流源作成 ΟΝ/OFF所使用之絲放大器，並能適#地補償如前述之受 光元件之溫度特性。繼而共同具有輸出端，並能⑴個晶片 而正確地實現相對於2個波長之光信號強度之監控器。 此外’本實施形態之受光放大電路巾，理想上係在前述 减並未連接著前述受光元件，而且具備參考用之P個放 大器’其係和前述初級放大器相同地構成，而在前述初級 之2個放大器係分別設置對應於前述複數種類的各波長之 溫度特性互為相異之反饋電阻，且在第2級之各差動放大器 係輸入來自前述初級放大器的輸出和來自前述另i個放I 器的輸出’並求得此等之差份，且藉由切換前述第i級的各 放大器之反饋電阻而實現前述電阻體的切換。 根據上述之構成，藉由切換第1級之各放大器的反饋電Is constant current source is immobilized. According to the above structure, the second-stage differential amplifier is connected to the i output terminals, and is switched in response to the switching of the wavelength. Only the constant current source is made into a silk amplifier used for ON / OFF, and can be appropriately compensated. The temperature characteristics of the light receiving element as described above. It then has an output terminal in common, and can properly implement a monitor with two wafers of optical signal intensity relative to two wavelengths. In addition, 'the light-receiving amplifier circuit of this embodiment is ideally connected to the aforesaid minus without the aforesaid light-receiving element and provided with P amplifiers for reference', which is the same structure as the aforesaid primary amplifier, and in the aforesaid primary two Each amplifier is provided with feedback resistors whose temperature characteristics are different from each other corresponding to the aforementioned plural kinds of wavelengths, and each differential amplifier in the second stage receives the input from the primary amplifier and the output from the other i amplifiers. The output of the amplifier is obtained, and these differences are obtained, and the aforementioned resistor body is switched by switching the feedback resistance of each amplifier of the i-th stage. According to the above configuration, the feedback current of each amplifier of the first stage is switched.
O:\90\90427.DOC -30- 2U0414670 阻’即能具體地實現如前 冰 之度特性相異之電阻體的切 換。此外，藉由設置參考用放 趸用之裒大态，而能僅取出往受光 元件的光輸入而產生之信號成份。 此外，本實施形g之受光放大電㈣衫前述反饋電阻 和靈敏度的電阻為由溫度特性互為相異之2種類的擴散電 阻而製作較為理想。 此外，本實施形態之受光放大電路係決定前述反饋電阻 和靈敏度的電阻為由溫度特性互為相異之擴散電阻和多晶 矽電阻而製作較為理想。 此外，本實施形態之受光放大電路係決定前述反饋電阻 和靈敏度的電阻為由溫度特性互為相異之多晶矽電 作較為理想。 t 此外，本實施形態之光讀取元件係使用上述之受光放大 電路。 根據上述之構成，即使因波長的變化而導致受光元件的 靈敏度之溫度特性產生變化，亦能以受光放大電路的靈敏 度之溫度特性而將其消除，並能實現無靈敏度的溫度特性 之光頃取7L件。 在發明之詳細說明之項目中所實施之具體的實施形態或 實施例，至多也不過是闡明本發明之技術内容，但，並非 僅限定於如此之具體例而作狹義之解釋，而能在本發明之 精神和如下所記載之專利項目的範圍内，作各種變^而實 施。 κ 【圖式簡單說明】O: \ 90 \ 90427.DOC -30- 2U0414670 Resistance ’can specifically realize the switching of resistors with different characteristics as before. In addition, by setting the large state of the reference amplifier, it is possible to extract only the signal components generated by the light input to the light receiving element. In addition, the aforementioned feedback resistance and sensitivity resistance of the light-receiving amplification electric shirt according to the embodiment g are preferably made of two types of diffusion resistances whose temperature characteristics are different from each other. In addition, the light-receiving amplifier circuit of this embodiment is preferably manufactured by using a diffusion resistor and a polycrystalline silicon resistor whose temperature characteristics are different from each other. In addition, the light-receiving amplifying circuit of this embodiment is preferably a polycrystalline silicon circuit in which the resistances of the feedback resistor and the sensitivity are different from each other due to temperature characteristics. t The optical reading device of this embodiment uses the above-mentioned light receiving amplifier circuit. According to the above structure, even if the temperature characteristic of the sensitivity of the light receiving element is changed due to the change of the wavelength, it can be eliminated by the temperature characteristic of the sensitivity of the light receiving amplifier circuit, and the light of the temperature characteristic without sensitivity can be obtained. 7L pieces. The specific implementation forms or examples implemented in the items of the detailed description of the invention are at most merely to clarify the technical content of the present invention, but they are not limited to such specific examples and are explained narrowly. The spirit of the invention and the scope of the patent items described below can be modified in various ways. κ [Schematic description]
O:\90\90427.DOC -31 - 圖1係表示載裝本發明之 L 只苑之一形態的拾訊器元件之 己錄/重現梟置之光學系統之圖示。 圖2係表示作為圖丨之記 itm ^ ^ ^ ，、重現衣置的光拾訊器元件而 便用之本發明之實施之一 電路t m /心、的光拾訊器元件之受光放大 电路之％虱性構成之區塊圖。 圖3係表示圖2之光拾％ — #丄 °凡〇〇 70件（受光放大電路）之#動 放大器的具體性構成兩 } 是動 僻取义私虱電路圖。 圖4係表示本發明之實 Γ兵朵访士予 、另外的形態的光拾訊器元件 放大％路)之電氣性構成之區塊圖。 圖5係表示圖4之光私％突— #丄 讯益70件（受光放大電路）之差動 放大器的具體性構成之電氣電路圖。 動 圖6係表示本發明之實施之更另外的形態的光拾訊器元 件（受光放大電路）之電氣性構成之區塊圖。 【圖式代表符號說明】 1 2 3 4、6 5 7 8 9 10、11 ; 2卜 31 Al、Ala、Alb 記錄/重現裝置 光碟 雷射二極體（發光元件） 準直儀透鏡 束分離器 對物透鏡 光點透鏡 受光元件 41 光讀取元件 大器（第1級之放大器、初級 放大器）O: \ 90 \ 90427.DOC -31-Fig. 1 is a diagram showing a recorded / reproduced optical system on which a pickup element of one form of the present invention is mounted. FIG. 2 shows a light receiving amplifying circuit of a circuit tm / core, an optical pickup element, which is an implementation of the present invention, which is used as the optical pickup element of the figure as the mark itm ^ ^ ^ in FIG. Block diagram of% lice sexuality. Fig. 3 shows the optical pickup of Fig. 2 — # 丄 ° 凡 〇〇 70 pieces (light-receiving amplifier circuit) of the specific configuration of the amplifier} is a circuit diagram of the private lice. FIG. 4 is a block diagram showing the electrical configuration of the optical pickup device (magnification method) in another embodiment of the present invention. FIG. 5 is an electrical circuit diagram showing the specific structure of the differential amplifier of the light-intensity-supplied 70-piece (light-receiving amplifier circuit) of FIG. 4. FIG. 6 is a block diagram showing the electrical configuration of an optical pickup device (light receiving amplifier circuit) according to yet another embodiment of the present invention. [Schematic representation of symbols] 1 2 3 4, 6 5 7 8 9 10, 11; 2 Bu 31 Al, Ala, Alb Recording / reproducing device Laser diode (light emitting element) Collimator lens beam separation Object-to-object lens, spot lens, light-receiving element, 41 optical reading element amplifier (first stage amplifier, primary amplifier)
O:\90\90427.DOC -32- 200414670 A2、A2b 大器（另1個之初級放大器、 爹考放大器） A3、A4 ; A3a、A4a ; 差動放大器（第2級之放大 A5 器） F3、F4、F5 電流源 OP 卜 OP2、OP3、OP4; OP5 ； OPla 放大器部 PD 二極體 Q5 NPN型之電晶體 Q3 卜 Q32 ; Q4卜 Q42 NPN型之電晶體（差動對） Q33 、 Q43 NP型之電晶體 R311 、 R321 ; R411 、 R421 輸入電阻 R312、R322 ; R412、 R422 分壓電阻（增益電阻） Rfl、Rf2 反饋電阻（增益電阻） RflO 入電阻 Rfll、Rfl2 ; Rf21、 Rf22 反饋電阻（增益電阻） Rf31、Rf41 ; Rf51 壓電阻 Rf32、Rf42 ; Rf52 反饋電阻（增益電阻） Rs31、Rs32 ; Rs41、 Rs42 ; Rs51、Rs52 輸入電阻 SW1、SW2 關元件 O:\90\90427.DOC -33-O: \ 90 \ 90427.DOC -32- 200414670 A2, A2b amplifier (the other one is the primary amplifier, the daddy test amplifier) A3, A4; A3a, A4a; the differential amplifier (the second stage amplifier A5) F3 , F4, F5 current sources OP, OP2, OP3, OP4; OP5; OPla amplifier PD PD diode Q5 NPN transistor Q3, Q32; Q4, Q42 NPN transistor (differential pair) Q33, Q43 NP Transistors R311, R321; R411, R421 Input resistances R312, R322; R412, R422 Voltage-dividing resistors (gain resistors) Rfl, Rf2 Feedback resistors (gain resistors) RflO Input resistors Rfll, Rfl2; Rf21, Rf22 feedback resistors (gain Resistors) Rf31, Rf41; Rf51 piezoresistors Rf32, Rf42; Rf52 feedback resistors (gain resistors) Rs31, Rs32; Rs41, Rs42; Rs51, Rs52 Input resistors SW1, SW2 Closed components O: \ 90 \ 90427.DOC -33-
Claims (1)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003019417A JP2004235764A (en) | 2003-01-28 | 2003-01-28 | Light receiving amplifier circuit and optical pickup element equipped with same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200414670A true TW200414670A (en) | 2004-08-01 |
| TWI243535B TWI243535B (en) | 2005-11-11 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093100442A TWI243535B (en) | 2003-01-28 | 2004-01-08 | Photoreceptive amplifier circuit and optical pickup element including the same |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20040184387A1 (en) |
| JP (1) | JP2004235764A (en) |
| CN (1) | CN1266832C (en) |
| TW (1) | TWI243535B (en) |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006025377A (en) * | 2004-07-09 | 2006-01-26 | Sharp Corp | Light receiving amplifier circuit and optical pickup |
| JP2007026486A (en) * | 2005-07-12 | 2007-02-01 | Toshiba Corp | Light receiving element circuit and optical disk drive |
| JP2007149260A (en) * | 2005-11-29 | 2007-06-14 | Toshiba Corp | Light receiving element circuit, optical head device, and optical disk device |
| EP1744308A3 (en) | 2005-07-12 | 2009-03-18 | Kabushiki Kaisha Toshiba | Light receiving element circuit and optical disk drive |
| JP4550712B2 (en) | 2005-10-17 | 2010-09-22 | ルネサスエレクトロニクス株式会社 | Light receiving circuit |
| JP4228020B2 (en) * | 2006-09-27 | 2009-02-25 | シャープ株式会社 | Photoreceiver / amplifier circuit, optical pickup device and optical disk device |
| JP6217258B2 (en) * | 2013-09-06 | 2017-10-25 | ソニー株式会社 | Current-voltage conversion circuit, optical receiver, and optical transmission system |
| CN211236238U (en) | 2017-03-29 | 2020-08-11 | 深圳市大疆创新科技有限公司 | Light detection and ranging (LIDAR) system and unmanned vehicle |
| WO2018176289A1 (en) * | 2017-03-29 | 2018-10-04 | 深圳市大疆创新科技有限公司 | Amplification circuit, laser measurement device, and mobile platform |
| JP6884050B2 (en) * | 2017-06-29 | 2021-06-09 | アズビル株式会社 | Photoelectric switch |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3315851B2 (en) * | 1995-12-19 | 2002-08-19 | シャープ株式会社 | High-speed communication device using broadband amplifier circuit |
-
2003
- 2003-01-28 JP JP2003019417A patent/JP2004235764A/en active Pending
-
2004
- 2004-01-08 TW TW093100442A patent/TWI243535B/en not_active IP Right Cessation
- 2004-01-20 CN CNB2004100028944A patent/CN1266832C/en not_active Expired - Fee Related
- 2004-01-27 US US10/764,532 patent/US20040184387A1/en not_active Abandoned
Also Published As
| Publication number | Publication date |
|---|---|
| TWI243535B (en) | 2005-11-11 |
| CN1266832C (en) | 2006-07-26 |
| JP2004235764A (en) | 2004-08-19 |
| CN1518210A (en) | 2004-08-04 |
| US20040184387A1 (en) | 2004-09-23 |
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