TW200409195A - Method for eliminating the affection of existing defect by multiple exposure process for semiconductor manufacture - Google Patents
Method for eliminating the affection of existing defect by multiple exposure process for semiconductor manufacture Download PDFInfo
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200409195 五、發明說明（1) -一 發明所屈之技術領 本發明係有關於一種在半導體製程中利用多次曝光降低已 存缺陷之影響的方法，特別是有關於一種在半導體製程 中，利用具相同佈局圖案之同一光罩或不同光罩，以低強 度之曝光劑量對同一晶圓上之同一光阻區娀進行多次曝 光’來降低光罩上已存缺陷之影響的方法。 先前技術： 在半導體之製程中，光罩係一種廣泛使用之元件。一般光 ，係由透明基材、以及其上之具有圖案之吸收性或不透明 ^膜所構成，其中透明基材之材料可例如為石英、玻璃 等’而不透明薄膜之材料則可例如為鉻、鎳、或鋁等且其 厚度約為1000A。 ，罩之製造通常係在透光基材上披覆沉積不透明薄膜，接 著形成一光阻覆蓋此不透明薄膜，再例如以電子束等高解 析度的曝光技術進行曝光，並經顯影而在光阻上形成所需 之圖案’然後以银刻方式將此圖案轉移到不透明薄膜，而 在f罩上形成透光區域與不透光區域。 隨著半導體元件之關鍵尺寸（Critical Dimensi〇n; CD)的 持續微縮化，光罩製作的困難度也因而大幅增加。因此， 愈來愈難製作出完美無缺之光罩圖案。另外，在製程期 間’也常因為使用上的不小心，導致光罩圖案受損。因 此’目前在進行圖案複製之微影製程時，需先進行光罩之 檢及]與L補。光罩上之缺陷可分為透光缺陷（TranSparent Defect)'不透光缺陷（〇paque Defect)、以及相位缺陷200409195 V. Description of the invention (1)-The technical advantages of an invention The present invention relates to a method for reducing the effect of existing defects by using multiple exposures in a semiconductor process, and in particular, to a method for utilizing A method of reducing the effect of existing defects on a photomask by performing multiple exposures of the same photomask or different photomasks with the same layout pattern on the same photoresist region on the same wafer with a low intensity exposure dose. Prior art: In the semiconductor manufacturing process, a photomask is a widely used component. Generally, light is composed of a transparent substrate and a patterned absorbent or opaque film. The material of the transparent substrate may be, for example, quartz, glass, or the like. The material of the opaque film may be, for example, chromium, Nickel, or aluminum, etc., and its thickness is about 1000A. The manufacturing of the cover usually involves coating and depositing an opaque film on a light-transmitting substrate, and then forming a photoresist to cover the opaque film, and then exposing with a high-resolution exposure technology such as electron beam, and developing the photoresist on the photoresist. A desired pattern is formed thereon, and then this pattern is transferred to an opaque film in a silver engraving manner, and a light-transmitting region and an opaque region are formed on the f-cover. As critical dimensions (Critical Dimensions; CDs) of semiconductor devices continue to shrink, the difficulty of making photomasks has increased significantly. Therefore, it becomes more and more difficult to produce perfect mask patterns. In addition, during the process, the mask pattern is often damaged due to careless use. Therefore, at present, in the photolithography process of pattern reproduction, inspection of the photomask and] and L compensation are required. The defects on the reticle can be divided into TranSparent Defect, opaque Defect, and phase defect.
第7頁 200409195 五、發明說明（2) (Phase Defect)。其中，透光缺陷可能係因材料本 陷所致’或因修補時，使原本庫為 、 本萨而谇Λ ^ ^ 便原本應為不透先區的部分形成透 光&而以成而不透光缺陷可能係因材料本身 致，或因製造過程中之污染物附著，而造成 = 補時沉積之不透光物質過量或位置偏移，而使 原本應為透光區的部分形成不透光區所導致。 對於一般的二階強度光罩（Binary Intensity Masks; ΒΙΜ) 而言，目前最常見之修補方式係採用聚焦離子束技術來進 行光罩圖案修補。聚焦離子束技術係利用離子導入 (Bea^-indujd)之方式在透光缺陷上沈積不透光的碳膜，例 如聚苯乙烯高分子，以填補透光缺陷使其無法透光。另 外’聚焦離子束技術利用濺擊（Sputtering Away )方式將多 餘的鉻膜去除，以去除不透光缺陷而使光可通過。 然而’對相移式光罩（Phase Shifting Mask)、極紫外線 (Extreme Ultraviolet; EUV)之多層反射光罩、電子投射 微影製程（Electron Projection Lithography; EPL)之圖 規光罩（Stencil Mask)、離子束光罩（i〇n Beam Mask)、等 倍式X光光罩（IX X-ray Mask)、以及限角度散射投影式電 子束光罩（Scattering with Angular Limitation Projection Electron Beam Lithography Mask； SCALPEL Mask)等高階光罩而言，其修補會面臨一些問題，而導致難 以修補，甚至無法進行修補。 舉例而言，在相移式光罩上除了強度之缺陷外，尚有相位 缺陷待修補，其中強度之缺陷包括位於不透光區域之透光Page 7 200409195 V. Description of the Invention (2) (Phase Defect). Among them, the light transmission defect may be caused by the material's depression, or when repairing, the original library is Bensa and 谇 Λ ^ ^ It should have been formed as a light transmission & The opaque defect may be caused by the material itself or due to the adhesion of pollutants during the manufacturing process. The excess opaque material deposited in the supplementary time or the position is shifted, so that the part that should be the transparent area is not formed. Caused by the light transmission area. For general second-order intensity masks (BIM), the most common repair method at present is to use focused ion beam technology to repair the mask pattern. Focused ion beam technology uses iontophoresis (Bea ^ -indujd) to deposit an opaque carbon film, such as a polystyrene polymer, on a light-transmitting defect to fill the light-transmitting defect and make it unable to transmit light. In addition, the 'focused ion beam technology uses a sputtering method to remove excess chromium film to remove opaque defects and allow light to pass through. However, 'Phase Shifting Mask, Extreme Ultraviolet (EUV) multilayer reflection mask, Electron Projection Lithography (EPL) plan mask (Stencil Mask), Ion Beam Mask, IX X-ray Mask, and Scattering with Angular Limitation Projection Electron Beam Lithography Mask; SCALPEL Mask ) And other high-order photomasks, the repair will face some problems, which makes it difficult to repair, or even impossible to repair. For example, in addition to the defect of intensity, there are phase defects to be repaired on the phase-shifting photomask. The defect of intensity includes the light transmission in the opaque area.
200409195 五、發明說明（3) ， ^ 缺陷以及位於透光區域上之不透光缺陷。因此，很難在深 度或反射率上準確地增加或移除相移材料，而恢復相移式 光罩所需之相位關係。 另外，在極紫外線之多層反射光罩上進行其缺陷修補更形 困難。此乃係由於極紫外線光罩本身是為反射性光罩，因 此在光罩之透光區域上需覆蓋好幾層具有干涉性質的薄膜 材料以加強極紫外線光罩產生之反射作用。而且，'在此多 層的干涉薄膜上覆蓋有一層吸收層，其中此吸收層可根據 所需圖案而選擇性地移除。由於，此光罩之最終特性為多 層反射膜之綜合表現結果，因此多層反射區域上之缺陷很 難進行修補。 Λ 而對=鎮空之離子束光罩而言，透光缺陷為鏤空狀態，要 在透光缺陷上進行填補，相當困難，不僅過程相當複雜繁 瑣，且不易成功。 發明内容： 黎於上述之先前技術中，對於一些高階光罩，例如電子投 射微影製程之圖規光罩、極紫外線之多層反射光罩、離子 束光罩/、等倍式X光光罩、以及限角度散射投影式電子束光 罩等’彳艮難進行檢測與修補，甚至根本就無法檢測與修 因此’本發明的主要目的之一就是在提供一種在半導體製 程t利用多次曝光降低光罩上已存缺陷之影響的方法，其 係分別利用同一光罩或不同光罩上之相同佈局圖案，以低 劑量之曝光強度，對同一晶圓上之相同能敏200409195 V. Description of the Invention (3), ^ Defects and opaque defects located on transparent areas. Therefore, it is difficult to accurately add or remove phase-shifting materials in depth or reflectance, and restore the phase relationship required for a phase-shifting mask. In addition, it is more difficult to perform defect repair on a multilayer reflective mask of extreme ultraviolet rays. This is because the EUV mask is a reflective mask, so the light-transmitting area of the mask needs to be covered with several layers of interfering film materials to enhance the reflection effect of the EUV mask. Moreover, 'the multilayer interference film is covered with an absorption layer, wherein the absorption layer can be selectively removed according to a desired pattern. Since the final characteristics of this photomask are the result of the comprehensive performance of multiple layers of reflective film, it is difficult to repair defects in the multilayer reflective area. Λ For the ion beam mask of = blank, the transmission defects are hollowed out. It is very difficult to fill in the transmission defects. Not only is the process complicated and cumbersome, but it is not easy to succeed. Summary of the Invention: In the above-mentioned prior art, for some high-order photomasks, such as plan photomasks for electronic projection lithography, multilayer reflective photomasks for extreme ultraviolet light, ion beam photomasks, and equal magnification X-ray photomasks , And limited angle scattering projection type electron beam masks, etc., are difficult to detect and repair, and even cannot be detected and repaired at all. Therefore, one of the main objectives of the present invention is to provide a method of using multiple exposures to reduce The method of the influence of the existing defects on the photomask, which uses the same layout pattern on the same photomask or different photomasks, respectively, with a low dose of exposure intensity, sensitive to the same energy on the same wafer
第9頁 200409195 五、發明說明（4) (Energy - sensitive)區域進 已存缺陷之影像。由於已存 而所需之佈局圖案可經多次 缺陷的影像。因此，可大幅 有效減輕光罩上之已存缺陷 本發明之另一目的就是因為 罩上之已存缺陷之曝光影像 提升元件之關鍵尺寸的均勻 本發明之再一目的就是在提 上已存缺陷之影響的方法， 此可有效降低檢測與修補之 〇 根據以上所述之目的，本發 利用多次曝光降低已存缺陷 步驟：提供一光罩，其中此 圖案區’且這些圖案區中至 陷圖案區至少包括一缺陷， 透光缺陷，或為相位缺陷； 少包括一能敏層，例如光阻 影門植，以及分別透過上述 之能敏層上之一預設區域進 缺陷圖案區曝光上述之能敏 度小於此能敏層之顯影門檻 之圖案之間的平均效果，降 行多次曝光，藉以淡化光罩上 缺陷只經一次低強度之曝光， 曝光，如此一來可淡化此已存 地降低此已存缺陷顯影能力， 的影響。 利用多次曝光的方式可淡化光 ’因此可改善圖案品質，進而 度。 供一種利用多次曝光降低光罩 並不直接對光罩進行修補，因 負擔，進而提升光罩產出之良 明更提供了一種半導體製程中 之影響的方法，至少包括下列 光罩上至少包括相同之複數個 少包括一缺陷圖案區，而此缺 此缺陷可為透光缺陷或可為不 提供一基材，其中此基材上至 層，且上述之能敏層具有一顯 之光罩上的圖案區對上述基材 行多次的曝光步驟，其中透過 層的預設區域所使用之曝光強 。藉由無缺陷之圖案與有缺陷 低了缺陷對最後曝光結果之影Page 9 200409195 V. Description of the Invention (4) The (Energy-sensitive) area contains the image of the existing defect. The layout pattern required due to the existing image can pass through multiple defective images. Therefore, the existing defects on the photomask can be effectively and effectively reduced. Another object of the present invention is because the critical size of the exposed image lifting element of the existing defects on the mask is uniform. Another object of the present invention is to raise the existing defects. According to the purpose described above, the present invention uses multiple exposures to reduce the existing defects. Step: Provide a photomask, in which the pattern areas' and the pattern areas are trapped. The pattern area includes at least a defect, a light transmission defect, or a phase defect; it also includes a sensitive layer, such as a photoresist shadow gate, and the defect pattern area is exposed through a preset area on the sensitive layer, respectively. The energy sensitivity is less than the average effect between the patterns of the development threshold of the energy sensitive layer, and multiple exposures are reduced to reduce the defects on the photomask only after a low-intensity exposure and exposure. In this way, the existing The effect of reducing the developing capability of this existing defect is reduced. The multiple exposures can be used to lighten the light, so the pattern quality can be improved, and further. Provides a method to reduce the photomask by using multiple exposures, and does not directly repair the photomask. Due to the burden, the output of the photomask is improved. It also provides a method for influencing the semiconductor process. At least the following photomasks include at least the same The plurality includes a defect pattern area, and the defect may be a light transmission defect or may not be provided with a substrate, wherein the substrate is on a layer, and the above-mentioned energy-sensitive layer has a visible mask. The pattern area of the substrate is exposed to the substrate multiple times, and the exposure used in the predetermined area of the transmission layer is strong. With defect-free patterns and defects, the effect of defects on the final exposure result is reduced
第10頁 200409195 五、發明說明（5) 響。 強度？亦：f步驟中-次曝光步驟可使用相同之曝光 控制使缺陷度涵本發明…強度僅需 即可。 有效成像在能敏層上，且無法被顯影出來 ^ q1偟迓過另 已受到低強度曝光之缺陷圖 達到淡化已存缺陷之影像的 根據以上所述之目的，本發 程中利用多次曝光降低已存 下列步驟：提供複數個光罩 佈局圖案，且這些光罩中至 光罩至少包括一缺陷圖案， 案’亦可為不透光缺陷圖案 至少包括一能敏層，且此能 別利用這些光罩對上述基材 行多次曝光步驟，其中利用 之預設區域所使用的曝光強 以避免將缺陷圖案顯影出來 度大於此能敏層之顯影門檻 相同地，在上述之曝光步驟 同之曝光強度，亦可使用不 由於’具相同佈局圖案之不 缺陷分佈相當雜亂不均，因 一無缺陷之圖案區，對能敏上 案影像區進行多次曝光，即可 目的。 明另外更提供了一種半導體製 缺陷之影響的方法，至少包括 ’其中這些光罩上具有相同之 少包括一缺陷光罩，而此缺陷 此缺陷圖案可為透光缺陷圖 ;提供一基材，其中此基材上 敏層具有一顯影門檻；以及分 之能敏層上的一個預設區域進 上述之缺陷光罩曝光此能敏層 度小於此能敏層之顯影門檻， ’且這些曝光步驟之總曝光強 〇 中，每一次曝光步驟可使用相 同之曝光強度。 同圖案區或不同光罩，其上之 此在這些圖案區或光罩的同一Page 10 200409195 V. Description of Invention (5). strength? Also: The same exposure control can be used in the f-th exposure step to make the defect degree of the present invention ... the intensity only needs to be. Effective imaging on the sensitive layer, and cannot be developed ^ q1 偟 迓 Defective image that has been exposed to low intensity is used to reduce the image of existing defects. According to the purpose described above, multiple exposures are used in this process. The following steps are reduced: provide a plurality of photomask layout patterns, and at least one photomask pattern is included in the photomasks. The opaque defect pattern may also include at least one energy-sensitive layer, and this can not be used. These photomasks perform multiple exposure steps on the above-mentioned substrate. The exposure used in the preset area is strong to avoid developing the defect pattern to a degree greater than the development threshold of the sensitive layer. Similarly, the above-mentioned exposure steps are the same. For the exposure intensity, it is also possible to use the non-defective distribution with the same layout pattern, which is not very messy and uneven. Because of a defect-free pattern area, multiple exposures can be made to the sensitive image area. Ming also provides a method for the effect of semiconductor defects, including at least 'where these masks have the same as small as a defect mask, and the defect pattern of this defect can be a transparent defect map; provide a substrate, The sensitive layer on the substrate has a developing threshold; and a predetermined area on the sensitive layer is exposed to the above-mentioned defect mask to expose the sensitive layer to a level smaller than the developing threshold of the sensitive layer, and these exposure steps In the total exposure intensity, each exposure step can use the same exposure intensity. Same pattern area or different reticle, which is the same in these pattern area or reticle
第11頁 五、發明說明（6) 位置上同時有 可透過具相同 低劑量之曝光 淡化光罩上之 的，而獲得極 實施方式 本發明揭露一 之影響的方法 同佈局圖案， 能敏區域進行 影像的目的， 更加詳盡與完 圖示。 、存在的可能性非常低。藉由此種現象， 局圖案之不同圖案區或不同光罩，並利用 強度，對同一能敏區進行多次曝光步驟，來 t存缺陷之影像，達到改善圖像品質的目 佳之關鍵尺寸均勻度。 種半導體製程中利用多次曝光降低已存缺陷 、，其係分別利用同一光罩或不同光罩上之相 劑篁之曝光強度，對同一晶圓上之相同 -人曝光’藉以達到淡化光罩上已存缺陷之 改善轉移圖像之品質。為了使本發明之敘述 傷’可參照下列描述並配合第1圖至第7圖之 請參照第1圖，第1 ^ j Μ 圖係緣不本發明之第一較佳實施例之光 ;W 圖。此光罩100上包括有圖案區102、圖案區 圖案區106、以及圖案區1〇8等四個區域，其中這四個 ，，區102、圖案區104、圖案區106、以及圖案區108的尺 寸均相等。此外，圖案區1〇2至少包括圖案11〇, 0案區1〇4 至夕包括圖案116，圖案區1〇6至少包括圖案118，圖案區 108至少包括圖案120,其中圖案11〇、圖案116、圖案118、 以及圖案120之形狀與尺寸均相同，且圖案11〇在圖案區1〇2 之位置、圖案11 6在圖案區104之位置、圖案118在圖案區 1 0 6之位置、圖案1 2 0在圖案區丨〇 8之位置均互相對應。也就 疋說，光罩10 0上具有四個大小相等且内部之圖案佈局也相Page 11 V. Description of the invention (6) At the same time, the position can be lightened by exposure with the same low dose on the photomask to obtain the polar embodiment. The method disclosed in the present invention has the same effect as the layout pattern, and the sensitive area can be performed. The purpose of the video is more detailed and complete. 2. The possibility of existence is very low. With this phenomenon, different pattern areas or different photomasks of the local pattern, and the intensity is used to perform multiple exposure steps on the same energy-sensitive area to save defective images and achieve uniform key dimensions for improving image quality. degree. This type of semiconductor process uses multiple exposures to reduce existing defects. It uses the exposure intensity of the same photomask or a photomask on different photomasks to expose the same-person exposure on the same wafer to reduce the photomask. The improvement of the existing defects improves the quality of the transferred image. In order to make the description of the present invention 'refer to the following description and cooperate with Figures 1 to 7, please refer to Figure 1. Figure 1 ^ jM is the light of the first preferred embodiment of the present invention; W Illustration. The reticle 100 includes four regions including a pattern region 102, a pattern region 106, and a pattern region 108. Among these four regions, the region 102, the pattern region 104, the pattern region 106, and the pattern region 108 All dimensions are equal. In addition, the pattern area 102 includes at least a pattern 11.0, and the case area 104 includes a pattern 116. The pattern area 106 includes at least a pattern 118. The pattern area 108 includes at least a pattern 120. Among them, the pattern 110 and the pattern 116 , Pattern 118, and pattern 120 are the same in shape and size, and pattern 110 is in pattern region 102, pattern 116 is in pattern region 104, pattern 118 is in pattern region 106, pattern 1 The positions of 20 in the pattern area 〇 08 correspond to each other. That is to say, the photomask 100 has four equal-sized and internal pattern layouts.
第12頁 200409195 五、發明說明（7) 同之圖案區。所不同的是，在圖案區102中，圖案110上具 有不透光缺陷11 2以及透光缺陷114。 接著，請參照第2圖，第2圖係繪示本發明之第一較佳實施 例之晶圓的上視圖。晶圓2 0 0上塗佈有一層能敏層，例如光 阻層2 0 2，其中此光阻層2 0 2具有顯影門檻，當光阻層2 0 2經 曝光後所產生之隱像（Latent Image)的強度超過顯影門檻 時，光阻層2 0 2就能被顯影劑顯開。此外，光阻層2 0 2上更 規劃有一預設區域204，其中此預設區域20 4之形狀尺寸與 第1圖之光罩10 0上的圖案區102、圖案區1〇4、圖案區106、 以及圖案區1 〇 8之形狀尺寸相同，且係用以供後續之曝光步 驟進行。應該注意的一點是，在本發明中，並不限於利用 光學型式進行曝光，亦可利用電荷投射等非光學型式技術 來進行曝光。 在本發明之第一較佳實施例中，多次曝光步驟的進行，請 同時參照第1圖與第2圖，首先分別透過第1圖之光罩1 〇〇上 的圖案區102、圖案區1〇4、圖案區1〇6、以及圖案區1〇8， 以低於第2圖光阻層202之顯影門檻的曝光強度，對準光阻 層2 0 2上之預設區域2 〇 4進行四次曝光。舉例而言，若光阻 層2 0 2之顯影門檻設定為全曝光劑量的j / 2強度，則上述之 曝光步驟可採用例如全曝光劑量的1 / 4強度來進行。 由於、’> 适四次曝光步驟係使用不超過光阻層2 0 2之顯影門檻 $曝光強度，且係分別透過光罩1〇〇上的圖案區1〇2、圖案 區1〇4、圖案區1〇6、以及圖案區ι〇8來曝光光阻層2〇2之相 同的預认區域204。再加上，光罩1〇〇上的圖案區1〇2、圖案Page 12 200409195 V. Description of the invention (7) Same pattern area. The difference is that in the pattern region 102, the pattern 110 has opaque defects 112 and opaque defects 114. Next, please refer to FIG. 2, which is a top view of a wafer according to the first preferred embodiment of the present invention. A wafer 200 is coated with a sensitive layer, such as a photoresist layer 202. The photoresist layer 202 has a development threshold. The hidden image generated after the photoresist layer 202 is exposed ( When the intensity of the Latent Image) exceeds the development threshold, the photoresist layer 202 can be developed by the developer. In addition, a preset area 204 is planned on the photoresist layer 202, and the shape and size of the preset area 204 are the same as the pattern area 102, the pattern area 104, and the pattern area on the photomask 100 of FIG. The shapes and sizes of 106, and the pattern area 108 are the same, and are used for subsequent exposure steps. It should be noted that, in the present invention, the exposure is not limited to using an optical type, and a non-optical type technique such as charge projection can also be used for exposure. In the first preferred embodiment of the present invention, the multiple exposure steps are performed. Please refer to FIG. 1 and FIG. 2 at the same time, and first pass through the pattern area 102 and the pattern area on the photomask 1 in FIG. 1 respectively. 104, the pattern area 106, and the pattern area 108 are aligned with a predetermined area 2 on the photoresist layer 202 with an exposure intensity lower than the development threshold of the photoresist layer 202 in FIG. 2 Make four exposures. For example, if the development threshold of the photoresist layer 202 is set to the full exposure dose j / 2 intensity, the above-mentioned exposure step may be performed using, for example, the full exposure dose 1/4 intensity. Because "> four suitable exposure steps use the development threshold $ exposure intensity of the photoresist layer 202, and pass through the pattern area 102, pattern area 104 on the photomask 100, The pattern area 106 and the pattern area 08 are used to expose the same predetermined area 204 of the photoresist layer 202. Plus, the pattern area 102 on the mask 100
第13頁 200409195 五、發明說明（8) 〜 區104、圖案區1〇6、以及圖案區1〇 8之尺寸形狀以及内部之 圖案佈局皆相同。於是，除了圖案區1〇 2上之不透光缺陷 11 2及透光缺陷11 4僅對光阻層2 0 2之預設區域2 0 4進行一次 低劑量的曝光外，相同之圖案i丨〇、圖案i丨6、圖案u 8、以 及圖案12 0共對光阻層20 2之預設區域20 4内之同一位置進行 四次低劑量的曝光。如此一來，不透光缺陷n 2及透光缺陷 11 4在光阻層2 0 2上所形成之隱像的強度不會超過光阻層2〇2 之顯影門檻，而圖案110、圖案116、圖案118、以及圖案 1 2 0在光阻層2 0 2上所共同形成之隱像強度則已超過光阻層 2 0 2之顯影門檻。 9Page 13 200409195 V. Description of the invention (8) to the area 104, the pattern area 106, and the pattern area 108 are the same in size and shape as well as the internal pattern layout. Therefore, except for the light-transmissive defects 11 2 and the light-transmissive defects 11 4 on the pattern area 102, only a low-dose exposure is performed on the preset area 2 0 4 of the photoresist layer 2 02, and the same pattern i 丨〇, the pattern i 丨 6, the pattern u8, and the pattern 12 0 make four low-dose exposures to the same position in the preset area 20 4 of the photoresist layer 20 2. In this way, the intensity of the hidden image formed by the opaque defect n 2 and the transparent defect 11 4 on the photoresist layer 202 will not exceed the development threshold of the photoresist layer 202, and the pattern 110 and the pattern 116 The intensity of the hidden image formed by the photoresist layer 202 and the pattern 118 on the photoresist layer 202 has exceeded the development threshold of the photoresist layer 202. 9
請參照第3圖’第3圖係繪示本發明第一較佳實施例之晶圓 上光阻的預設區域經多次曝光以及顯影後之放大上視圖。 由於，圖案110、圖案116、圖案118、以及圖案12 〇共同形 成之隱像強度已超過光阻層2 0 2之顯影門檻，^不透光缺陷 11 2及透光缺陷114所形成之隱像強度卻未達光阻層2〇2之顯 影門檻。因此，經過上述之四次曝光步驟，再經^影後 不透光缺陷112及透光缺陷114所形成之隱像難以被顯影出 來，甚至無法顯影出來。此外，圖案11〇、圖案U6、圖案 118、以及圖案120共同形成之隱像則可有效地顯影出來， 而將部分之光阻層202去除，進而將相同之圖案u〇、圖案 116、圖案118、以及圖案120順利地轉移至晶圓 ^ 阻層2〇2中，於是在光阻層202中形成轉移之圖\2^广先 值得注意的一點是’在上述之四次曝光步驟中，每一次曝 光步驟的曝光強度可相同’亦可不同。以上所使用之曝光Please refer to FIG. 3 ′. FIG. 3 is an enlarged top view showing a preset area of the photoresist on the wafer according to the first preferred embodiment of the present invention after multiple exposures and development. Since the intensity of the hidden image formed by the pattern 110, the pattern 116, the pattern 118, and the pattern 120 has exceeded the development threshold of the photoresist layer 202, the hidden image formed by the opaque defect 11 2 and the transparent defect 114 The strength did not reach the development threshold of the photoresist layer 202. Therefore, the hidden image formed by the opaque defects 112 and the transparent defects 114 after the four exposure steps described above is difficult to be developed, and even cannot be developed. In addition, the hidden image formed by the pattern 110, the pattern U6, the pattern 118, and the pattern 120 can be effectively developed, and a part of the photoresist layer 202 is removed, and the same pattern u0, pattern 116, and pattern 118 are removed. , And the pattern 120 is smoothly transferred to the wafer ^ resistive layer 202, so a transfer pattern is formed in the photoresistive layer 202. 2 ^ Guangxian's noteworthy point is that in the above four exposure steps, each The exposure intensities in one exposure step may be the same or different. Exposure used above
第14頁 200409195Page 14 200409195
五、發明說明（9) 強度僅限於舉例說明，本發 驟的曝光強度僅需使不透光 之隱像無法顯影出來，且相 11 8、以及圖案1 2 0所共同形 可。 明並不限此。本發明之曝光夕 缺陷11 2與透光缺陷丨i 4所形成 同之圖案11〇、圖案H6、圖案 成之隱像可有效地顯影出來即 限四個 多次曝 相同圖 舉例而 個’其 用此光 圖案之 圖案區 強度。 使用之 強度一 度亦可 之顯影 此外， 多次曝 發明之 係繪示 圖。第 本相同佈局圖案之圖案區的數量汗 光曝t數也：限於四★，且可對同一圖案區進利 案區的述僅用以舉例說明。本發明之光罩上之 ” &的數量至少須兩個， 4 言，若先置μ夕m且曝先_人數至少須兩次0V. Description of the invention (9) The intensity is limited to an example. The exposure intensity of this step only needs to prevent the opaque hidden image from being developed, and it is compatible with the phase 11 8 and the pattern 1 2 0. Ming is not limited to this. The exposure image 11 2 and the light transmission defect 丨 i 4 of the present invention form the same pattern 1110, pattern H6, and the hidden image formed by the pattern can be effectively developed. The intensity of the pattern area using this light pattern. The intensity used can be developed at one time. In addition, the invention of multiple exposures is a drawing. The number of pattern areas of the same layout pattern is also limited to four times. The description of the same pattern area that can be entered into the patent area is for illustration only. The number of "& s" on the photomask of the present invention must be at least two, 4 words.
中-個ίϊΐΐ::局圖案之圖案區僅有兩 罩對而另一個無缺陷圖，。當利 行低強度曝光一次，而可對無缺陷圖案之 其中，曝光步•’以淡化缺陷圖案之隱像 曝朵松ί仃…、缺陷圖案之圖案區的曝光步驟時，所 樣，又不需與曝光具有缺陷圖案之圖案區的曝光 ，，而可採用較大之曝光強度，甚至較小来 需所有曝光步驟之曝光強度總合可超過光阻層 J锻即可。Middle-a ϊΐΐ :: The pattern area of the bureau pattern has only two mask pairs and the other is a defect-free image. When the low-intensity exposure is performed once, and among the non-defective patterns, the exposure step can be performed by exposing the hidden image of the defect pattern to the loose pattern, the exposure step of the pattern area of the defect pattern. Compared with the exposure of pattern areas with defective patterns, a larger exposure intensity can be used, or even a smaller exposure intensity that requires all exposure steps can exceed the photoresist layer J forging.
=發明亦可使用具相同佈扃圖案之不同光罩來進行 第:請同時參照第4圖與第5圖，其中第4圖係繪示； 一較佳實施例之一光罩的上視示意圖，而第5圖, 發明之第二較佳實施例之另一光罩的上視示意 4圖之光罩3 0 0之形狀尺寸皆與第5圖之光罩4 〇 〇二形= Invention can also use different photomasks with the same fabric pattern for the first: Please refer to Figure 4 and Figure 5 at the same time, where Figure 4 is a schematic diagram; a schematic top view of a photomask of a preferred embodiment Figure 5, the top view of another photomask of the second preferred embodiment of the invention, the shape and size of the photomask 300 of Fig. 4 are the same as the photomask 400 of Fig. 5
第15頁 200409195 五、發明說明（ίο) 狀尺寸相同’且光罩300上之圖案3〇 2的形狀尺寸及所處之 位置與光罩4 0 0上之圖案4 〇 2的形狀尺寸及所處之位置均相 同’所不同的是光罩3〇〇上之圖案3〇 2具有不透光缺陷30 4以 及透光缺陷30 6。Page 15 200209195 V. Description of the Invention (ί) The shape and size of the pattern 300 and the position on the reticle 300 are the same as those of the pattern 4 〇2 on the reticle 300. The positions are the same everywhere. The difference is that the pattern 300 on the mask 300 has opaque defects 30 4 and opaque defects 30 6.
I 睛參照第6圖’第6圖係繪示本發明之第二較佳實施例之晶 圓的上視圖。在此晶圓5 0 0上，已塗佈有一層能敏層，例如 光阻層5 0 2。而此光阻層5 〇 2具有顯影門檻，其中當光阻層 5 0 2經曝光後所產生之隱像的強度超過顯影門檻時，顯影劑 就可將光阻層5 0 2顯開，若光阻層5 〇 2經曝光後所產生之隱 像的強度未超過顯影門檻時，顯影劑便無法將光阻層5 〇 2顯 開在此光阻層5 0 2上更規劃有一預設區域5 〇 4，其中此預 設區域，5 04之形狀尺寸與第4圖之光罩3〇〇以及第5圖之光罩 5 : : 5尺寸相同。後續之曝光步驟皆係對準此預設區域 b U 4來進打。 ;m照，！圖、第5圖、與第6圖，在本發明之第二較佳 A ^ 3 0 曝光步驟的進行，首先係分別透過第4圖之 先罩30 0以及第5圖之光罩400,以低於第 影門檻的曝光強声，縣淮止a见π乐0圃元阻層13UZ之顯 彘由 又對準先阻層5 0 2上之預設區域504進行 ^ 禮可分別利用光罩30 0與光罩40 0各進行一次曝 ^ _ 1 利用光罩3 0 0在光阻層5 0 2之預設區域5 0 4上進 I人广、、，，而利用光罩4 0 0在此預設區域5 0 4上進行多次 偾。化光罩300上之不透光缺陷30 4與透光缺陷30 6之 二。在曝光步驟進行期間，可使晶圓5〇〇固定不動，而僅 更換所使用之光罩3 0 0與光罩4 0 0即可。I. Referring to FIG. 6 ', FIG. 6 is a top view showing a crystal circle of a second preferred embodiment of the present invention. On this wafer 500, an energy-sensitive layer, such as a photoresist layer 502, has been coated. The photoresist layer 502 has a development threshold. When the intensity of the hidden image generated by the photoresist layer 502 after exposure exceeds the development threshold, the developer can open the photoresist layer 502. When the intensity of the hidden image generated by the photoresist layer 502 after exposure does not exceed the development threshold, the developer cannot display the photoresist layer 502 on the photoresist layer 502, and a preset area is planned. 5 04, in which the preset area, the shape and size of 5 04 are the same as the size of the mask 300 in FIG. 4 and the size of the mask 5: 5 in FIG. 5. Subsequent exposure steps are aimed at this preset area b U 4 to enter. ; m photo ,! Figure 5, Figure 5, and Figure 6. In the second preferred exposure step A ^ 30 of the present invention, the first step is to pass through the mask 300 of Figure 4 and the mask 400 of Figure 5, respectively. Strong exposure below the threshold of the first shadow, the county Huaizhi a see the π Le0 Puyuan resistance layer 13UZ display is directed at the pre-resistance layer 5 0 2 on the preset area 504 ^ ceremony can be used separately mask 30 0 and reticle 40 0 for one exposure each ^ _ 1 Use a reticle 3 0 0 to advance the photoresist layer 5 0 2 in the preset area 5 0 4 and use the reticle 4 0 0 Perform multiple taps on this preset area 5 0 4. The opaque defect 30 4 and the transmissive defect 30 6 on the chemical mask 300 are two. During the exposure step, the wafer 500 can be fixed, and only the photomask 300 and photomask 400 can be replaced.
第16頁 200409195 五、發明說明（11) 本發明之曝光次數不限，較佳是僅利用具有缺陷之光罩300 進行一次曝光，而利用無缺陷之光罩40 0進行一次以上的曝 光，以有效降低光罩30 0上之不透光缺陷30 4與透光缺陷3 0 6 的影響。其中，利用無缺陷之光罩4 0 0進行曝光時，曝光次 數取決於所使用之曝光強度以及光阻層50 2之顯影門檻，重 要的是需使相同之圖案302與圖案402所共同在光阻層5〇2上 形成之隱像能被顯影劑顯開。舉例而言，若光阻層5 0 2之顯 影門植設定為全曝光劑量的1 / 2強度，而上述之曝光步驟採 用全曝光劑量的1/4強度來進行時，利用無缺陷之光罩400 進行曝光的次數至少兩次以上為較佺。 ， 由於，上述之曝光步驟係使用不超過光阻層50 2之顯影門檻 的曝光強度’且係分別透過光罩3 0 0與光罩4 0 0對光阻層5 0 2 之相同的預設區域504進行曝光。再加上，光罩3〇〇上之圖 案3 0 2與光罩400上之圖案40 2之形狀尺寸及所處位置皆相 同。因此，除了僅透過光罩3 0 0上之不透光缺陷3〇4及透光 缺陷3 0 6對光阻層5 0 2之預設區域5 0 4進行一次低劑量的曝光 外，相同之圖案30 2以及圖案40 2共對光阻層502之預設區域 5 0 4内之同一位置進行至少兩次以上的低強度曝光。如此一 來，光罩30 0上之不透光缺陷30 4及透光缺陷30 6在光阻層 5 0 2上所形成之隱像強度不會超過光阻層5 〇 2之顯影門檻， 而相同之圖案30 2以及圖案402在光阻層5 0 2上所共同形成之 隱像強度則已超過光阻層5 0 2之顯影門檻。 請參照第7圖，第7圖係缘示本發明第二較佳實施例之晶圓 上光阻的預設區域經多次曝光以及顯影後之放大上視圖。Page 16 200409195 V. Description of the invention (11) The number of exposures of the present invention is not limited. It is preferred to use only a defect mask 300 for one exposure, and use a defect-free mask 400 for more than one exposure. Effectively reduce the influence of the opaque defect 30 4 and the transmissive defect 3 0 6 on the reticle 300. Among them, when using a defect-free mask 400 for exposure, the number of exposures depends on the exposure intensity used and the development threshold of the photoresist layer 50 2. It is important that the same pattern 302 and pattern 402 be exposed to light together. The hidden image formed on the resist layer 502 can be developed by the developer. For example, if the development gate of the photoresist layer 5 2 is set to 1/2 the intensity of the full exposure dose, and the above-mentioned exposure step is performed using the 1/4 intensity of the full exposure dose, a defect-free mask is used. 400 The number of exposures performed at least twice is more severe. Because the above-mentioned exposure step uses an exposure intensity that does not exceed the development threshold of the photoresist layer 50 2 ', and is the same preset for the photoresist layer 5 0 2 through the photomask 3 0 and the photomask 4 0 0, respectively. The area 504 is exposed. In addition, the shapes and positions of the pattern 3202 on the mask 300 and the pattern 402 on the mask 400 are the same. Therefore, except that only a low-dose exposure is performed on the predetermined area 5 0 4 of the photoresist layer 5 0 4 through the opaque defect 3 0 4 and the light transmitting defect 3 0 6 on the photomask 300 The pattern 30 2 and the pattern 40 2 collectively perform at least two low-intensity exposures on the same position in the predetermined area 5 04 of the photoresist layer 502. In this way, the opaque defects 30 4 and 30 6 formed on the photoresist layer 300 on the photoresist layer 502 will not exceed the development threshold of the photoresist layer 502, and The intensity of the hidden image formed by the same pattern 30 2 and pattern 402 on the photoresist layer 5 02 has exceeded the development threshold of the photoresist layer 50 2. Please refer to FIG. 7. FIG. 7 is an enlarged top view of a preset area of a photoresist on a wafer according to a second preferred embodiment of the present invention after multiple exposures and developments.
200409195 五、發明說明（12) ^ - 由於，圖案30 2以及圖案402所共同形成之隱像強度已超過 光阻層5 0 2之顯影門檻，而不透光缺陷3〇4及透光缺陷3〇6所 形成之隱像強度卻未達光阻層5 02之顯影門檻。因此，經過 上述之多次曝光步驟，再經顯影後，光罩3〇〇上之不透光缺 陷304及透光缺陷30 6所形成之隱像難以被顯影出來，甚至、 無法顯影出來。而圖案3 0 2以及圖案4 0 2共同形成之隱像則 可有效地顯影出來，以將部分之光阻層5 〇 2去除，進而將 同之圖案30 2以及圖案40 2順利地轉移至晶圓5 〇 〇上之光阻居 5〇2中。於是，在光阻層5〇2中形成轉移之圖案5〇6。 曰 值得注意的一點是’在本發明之第二較佳實施例中，每一 次曝光步驟所使用之曝光強度可相同，亦可不同。以上所 使用之曝光強度僅限於舉例說明，本發明並不限此。本發 明之曝光步驟的曝光強度僅需使光罩3〇〇上之不透光缺陷 3 〇 4與透光缺陷3 0 6所形成之隱像無法顯影出來，且相同之 圖案30 2以及圖案402所共同形成之隱像可有效地顯影出來 即可。 η 此外，本發明所使用之光罩數量不限兩個，但至少必須兩 個二上，可使用多個具相同佈局圖案之光罩，且曝光次數 至須兩次以上。舉例而言，若使用四個具相同佈局圖案 光罩僅其中個具有缺陷圖案，而另外三個無缺陷圖 〔、°當利用廷些光罩對光阻層之特定區域進行曝光時，僅 J過具有缺陷圖案之光罩進行低強度曝光一次，而可分別 儿過無缺陷圖案之光罩各進行一次以上的曝光步驟，以淡 缺陷圖案之隱像強度。當然，亦可僅使用具有缺陷圖案200409195 V. Description of the invention (12) ^-Because the intensity of the hidden image formed by the pattern 30 2 and the pattern 402 has exceeded the development threshold of the photoresist layer 5 0 2, the non-transmissive defect 3 04 and the transmissive defect 3 The intensity of the hidden image formed by 〇6 did not reach the development threshold of the photoresist layer 502. Therefore, after the multiple exposure steps described above, and after development, the hidden image formed by the opaque defects 304 and opaque defects 306 on the photomask 300 is difficult to be developed, and even cannot be developed. The hidden image formed by the pattern 3 0 2 and the pattern 4 2 2 can be effectively developed to remove part of the photoresist layer 5 2, and then the same pattern 30 2 and the pattern 40 2 can be smoothly transferred to the crystal. The photoresist on circle 5000 is in 502. Thus, a transferred pattern 506 is formed in the photoresist layer 502. It is worth noting that, in the second preferred embodiment of the present invention, the exposure intensity used in each exposure step may be the same or different. The exposure intensity used above is only for illustration, and the present invention is not limited thereto. The exposure intensity of the exposure step of the present invention only needs to make the hidden image formed by the opaque defect 3 04 and the transparent defect 3 06 on the mask 300 unable to develop, and the same pattern 302 and pattern 402 The co-formed hidden images can be effectively developed. η In addition, the number of photomasks used in the present invention is not limited to two, but at least two must be used. Multiple photomasks with the same layout pattern can be used, and the number of exposures must be more than two. For example, if four masks with the same layout pattern are used and only one of them has a defect pattern, and the other three are non-defective maps [, when only a certain area of the photoresist layer is exposed using these masks, only J A low-intensity exposure is performed once through a mask with a defective pattern, and an exposure step may be performed each time through a mask without a defective pattern to lighten the hidden image intensity of the defective pattern. Of course, it is also possible to use only defective patterns
200409195 五、發明說明（13) 之光罩 之光罩 然而， 不同圖 陷，由 是位於 當低。 光阻之 曝光， 阻層上 其中， 曝光強樣，而可，僅 影門檻 以及一個 進行一次 在具有相 案區中， 於這些圖 同一光罩 因此，可 顯影門檻 藉以降低 之隱像強 透過無缺 度不需與 可採用較 需所有曝 即可。 無缺陷 以上的 同佈局 可能每 案缺陷 之不同 分別透 之曝光 每片光 度，藉 陷圖案 曝光具 大之曝 光步驟 圖案之光罩 曝光步驟即 圖案之眾多 片光罩或每 位於不同光 圖案區之同 過這些光罩 強度對光阻 罩或每個圖 以改善轉移 之光罩進行 有缺陷圖案 光強度，甚 之曝光強度 ，只要透過 可達到相同 光罩或者同 個圖案區都 罩之同一相 一相對位置 或這些圖案 層之同一區 案區上之缺 圖案之品質 曝光步驟時 之光罩的曝 至較小之曝 總合可超過 無缺陷圖案 之效果。 一光罩上之 具有圖案缺 對位置或者 的可能性相 區，以低於 域進行多次 陷形成於光 〇 ，所使用之 光強度一 光強度亦 光阻層之顯 ί Γΐ i:ΐ:本發明之一優點就是因為本發明之半導體 氣程中利用多次曝光降低光罩上已存缺陷之影響的方法， 可透過無缺陷圖案來修正已存缺陷圖案之影像。因此，可 減輕此已存缺陷顯影能力，達到有效降低光罩上已 之影響的目的。 本發明之又一優點就是因為利用多次曝光的方式可淡化光 罩上之已存缺陷之曝光影像，因此可達到改善轉移圖案之 品質的目的，進而提升元件之關鍵尺寸的均勻度。 本發明之再一優點就是因為本發明之利用多次曝光降低光200409195 V. The mask of the invention (13) The mask of different designs, however, is located at the low level. Exposure of the photoresist, the exposure layer on the resist layer is strong, but only the shadow threshold and one is performed once in the area with the same case. In the same photomask in these pictures, the hidden image can be reduced by the development threshold and there is no defect. It is not necessary to use all the exposures that can be used. The same layout with no defects or above may have different exposures for each piece of light. Each pattern is exposed with a large exposure step. The patterned photomask exposure step is a pattern of multiple photomasks or each of the photomasks located in different light pattern areas. Defective pattern light intensity of the photoresist mask or each photomask to improve the transfer of these mask intensities, and even the exposure intensity, as long as the same phase or the same mask can be achieved through the same mask The relative exposure or the exposure of the mask to the smaller exposure during the quality exposure step of the missing pattern on the same area of the pattern layer can exceed the effect of the defect-free pattern. A photomask has a pattern missing position or the possibility of a phase area, which is formed in the light by multiple depressions below the domain. The light intensity used is a light intensity and the photoresist layer is displayed. Γΐ i: ΐ: One advantage of the present invention is that the method of using multiple exposures to reduce the effect of existing defects on the photomask in the semiconductor air path of the present invention can correct the image of the existing defect patterns through a defect-free pattern. Therefore, the developing capability of the existing defects can be reduced, and the purpose of effectively reducing the effects on the photomask can be achieved. Another advantage of the present invention is that the exposure image of the existing defects on the mask can be diluted by using multiple exposures, so that the quality of the transfer pattern can be improved, and the uniformity of the key dimensions of the device can be improved. Another advantage of the present invention is that the present invention uses multiple exposures to reduce light.
第19頁 200409195 五、發明說明（14) 罩上已存缺陷之影響的方法，並不直接對光罩進行修補， 因此可有效修補難以在光罩上直接作檢測與修補之高階光 罩，例如相移式光罩、極紫外線之多層反射光罩、電子投 射微影製程之圖規光罩、離子束光罩、等倍式X光光罩、以 及限角度散射投影式電子束光罩等。 如熟悉此技術之人員所暸解的，以上所述僅為本發明之較 佳實施例而已，並非用以限定本發明之申請專利範圍；凡 其它未脫離本發明所揭示之精神下所完成之等效改變或修 飾，均應包含在下述之申請專利範圍内。Page 19, 200409195 V. Description of the invention (14) The method of affecting the existing defects on the mask does not directly repair the photomask, so it can effectively repair high-level photomasks that are difficult to directly detect and repair on the photomask, such as Phase-shifting photomasks, multilayer reflective photomasks for extreme ultraviolet light, plan photomasks for electron projection lithography, ion beam photomasks, equal magnification X-ray photomasks, and limited-angle scattering projection electron beam photomasks. As will be understood by those familiar with this technology, the above descriptions are merely preferred embodiments of the present invention, and are not intended to limit the scope of patent application for the present invention; all others completed without departing from the spirit disclosed by the present invention, etc. Effective changes or modifications should be included in the scope of patent application described below.
200409195 圖式簡單說明 本發明的較佳實施例已於前述之說明文字中輔以下列圖形 做更詳細的闡述，其中： 第1圖係繪示本發明之第一較佳實施例之光罩上視示意圖； 第2圖係繪示本發明之第一較佳實施例之晶圓的上視圖； 第3圖係繪示本發明第一較佳實施例之晶圓上光阻的預設區 域經多次曝光以及顯影後之放大上視圖； 第4圖係繪示本發明之第二較佳實施例之一光罩的上視示意 圖； 第5圖係繪示本發明之第二較佳實施例之另一光罩的上視示 意圖；200409195 Schematic illustration of the preferred embodiment of the present invention has been described in more detail in the preceding explanatory text with the following figures, where: Figure 1 is a photomask showing the first preferred embodiment of the present invention A schematic view; FIG. 2 is a top view of a wafer according to the first preferred embodiment of the present invention; FIG. 3 is a view showing a predetermined region of a photoresist on the wafer according to the first preferred embodiment of the present invention. An enlarged top view after multiple exposures and development; FIG. 4 is a schematic top view of a photomask according to a second preferred embodiment of the present invention; FIG. 5 is a second preferred embodiment of the present invention. Top view of another photomask;
第6圖係繪示本發明之第二較佳實施例之晶圓的上視圖；以 及 第7圖係繪示本發明第二較佳實施例之晶圓上光阻的預設區 域經多次曝光以及顯影後之上視圖。 圖號對照說明：FIG. 6 is a top view showing a wafer of the second preferred embodiment of the present invention; and FIG. 7 is a view showing a preset region of the photoresist on the wafer of the second preferred embodiment of the present invention after multiple passes Top view after exposure and development. Drawing number comparison description:
100 光罩 102 圖案區 104 圖案區 106 圖案區 108 圖案區 110 圖案 112 不透光缺陷 114 透光缺陷 116 圖案 118 圖案 120 圖案 200 晶圓 202 光阻層 204 預設區域 206 圖案 300 光罩100 mask 102 pattern area 104 pattern area 106 pattern area 108 pattern area 110 pattern 112 opacity defect 114 light defect 116 pattern 118 pattern 120 pattern 200 wafer 202 photoresist layer 204 preset area 206 pattern 300 mask
第21頁 200409195 圖式簡單說明 3 0 2 圖案 304 不透光缺陷 306 透光缺陷 400 光罩 402 圖案 500 晶圓 502 光阻層 504 預設區域 506 圖案 第22頁Page 21 200409195 Simple illustration of the pattern 3 0 2 pattern 304 opacity defect 306 light transmission defect 400 mask 402 pattern 500 wafer 502 photoresist layer 504 preset area 506 pattern page 22
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