TW200408506A

TW200408506A - Device for scrubbing polishing pad and method for scrubbing polishing pad by using the device

Info

Publication number: TW200408506A
Application number: TW91133957A
Authority: TW
Inventors: Yung-Tai Hung
Original assignee: Macronix Int Co Ltd
Priority date: 2002-11-21
Filing date: 2002-11-21
Publication date: 2004-06-01

Abstract

The present invention relates to a device for scrubbing a polishing pad used in a chemical mechanical polishing device for polishing a semiconductor wafer and a method for scrubbing a polishing pad by using the invented device. The device for scrubbing a polishing pad includes: a polishing pad having an opposite electrode mounted in the polishing pad; a polishing pad scrubbing tool having a polishing disk and a polishing support frame, in which the polishing pad scrubbing tool is installed with an electrode; and a bias voltage generator for generating a bias voltage between the electrodes in order to generate an electric field between the polishing disk and the polishing pad to adsorb or attract charged particles.

Description

200408506 五、發明說明（l) —----- 發明所屬之技術領域：本發明係關於-種研磨半導體晶圓之化學機械研磨設備，且特別有關於-種研磨半導體晶圓之化學機械研磨設備中用於整理研磨墊之研磨墊整理裝置及其整理研磨墊之方法。先前技術：【發明背景】化學機械研磨法可提供一半導體半導體晶圓表面全面性平坦化的解決方法，隨著超大型積體電路（ULSI)積集度的提升、製程的複雜化，經常需要在半導體晶圓表面形成絕緣層如二氧化矽等材料以及金屬層如鎢或銅等材料，進而形成一多重内導線之結構，以提升積體電路元件的電性表現。然而關於平坦化的技術，目前只有藉助化學機械研磨法才能使上述絕緣層與金屬層間達到全面性平坦化之效而化學機械研磨法係利用一模組化的化學機械研磨機設備，一般而言包含四個組成模組；分別是半導體晶圓搬運（wafer handling)、研磨拋光（polishing)、研漿傳遞 (slurry delivery)以及控制系統（control system)。半導體晶圓搬運模組係一自動化的機械工具，熟練的操作搬運至研磨抛光模組的半導體晶圓盒（wafer cassette)。研磨拋光模組包括複數個研磨頭（ρ〇 Π sh i ng head )，分別設置於稱為旋轉木馬（carousel)的機械***上。一研磨頭拾起一半導體晶圓並傳遞至一拋光研磨墊（p〇l i shi ng200408506 V. Description of the invention (l) —----- The technical field to which the invention belongs: The present invention relates to a chemical mechanical polishing device for polishing semiconductor wafers, and particularly relates to a chemical mechanical polishing for polishing semiconductor wafers A polishing pad finishing device and a method for finishing a polishing pad in the device. Prior technology: [Background of the invention] The chemical mechanical polishing method can provide a solution for comprehensive planarization of the surface of semiconductor semiconductor wafers. With the increase of the ultra-large integrated circuit (ULSI) accumulation degree and the complexity of the process, it is often necessary An insulating layer such as silicon dioxide and a metal layer such as tungsten or copper are formed on the surface of the semiconductor wafer to form a multiple inner conductor structure to improve the electrical performance of the integrated circuit element. However, with regard to the planarization technology, only the chemical mechanical polishing method can be used to achieve a comprehensive planarization effect between the insulating layer and the metal layer. The chemical mechanical polishing method uses a modular chemical mechanical polishing machine equipment. Generally speaking, Contains four component modules; namely, semiconductor wafer handling (wafer handling), polishing (polishing), slurry delivery (slurry delivery) and control system (control system). The semiconductor wafer handling module is an automated machine tool, which is skillfully handled and transported to the wafer cassette of the polishing module. The grinding and polishing module includes a plurality of grinding heads (ρ〇 Π sh i ng head), which are respectively arranged on a mechanical positioner called a carousel. A polishing head picks up a semiconductor wafer and transfers it to a polishing pad (p〇l i shi ng

^ - 7524TWF(n 1); p910096; s hawnchang. p t d 第 5 頁 200408506 五、發明說明（2) pad)被拋光研磨。當半導體晶圓被拋光研磨完成時，研磨聚傳遞模組驅散整齊流動的研磨漿溶液。研磨漿溶液係研磨料’機械式地磨損半導體晶圓表面用以移除不需要的材料。隨著機台處理完畢之半導體晶圓數目增加，研磨拋光椒組内之研磨墊因為重複拋光研磨半導體晶圓而變得平滑時’藉由研磨墊整理裝置可再次使研磨墊粗糙化。此外，因為研磨圖案及研磨拋光頭壓力可造成崎嶇不平地磨損，研磨墊整理裝置亦具有維持研磨墊水平的功能。藉由使用研磨塾整理裝置研磨突出研磨墊高度的面積，使研磨墊保持水平。第1圖係概要地顯示一習知技術之研磨墊整理裝置，適用於一研磨半導體晶圓材料之化學機械研磨設備11〇内’其中包括用於整理位於研磨平台15〇上之研磨墊14之研磨墊整理器1 6 0，此外更進一步包括用以注流研磨漿溶液於研磨墊14上研磨漿輸送管路18〇。研磨墊整理器16〇中包括了研磨器支撐架170以及研磨盤171以整理研磨墊14以及去除研磨墊物質，如研磨掉的半導體晶圓材料及殘留在研磨墊1 4的研磨漿溶液之研磨低粒，其中研磨盤1 7 }例如為含有鑽石粒子之不鱗鋼盤。於先前技術中，用於整理研磨墊之研磨墊整理器 1 6 0，僅採用研磨盤1 71以整理研磨墊丨4及去除研磨墊物質，如研磨掉的半導體晶圓材料及殘留在研磨墊14上的研磨漿溶液之研磨砥粒。研磨墊整理器丨6 〇無法有效移去在^-7524TWF (n 1); p910096; s hawnchang. When the polishing of the semiconductor wafer is completed, the polishing-polymer transfer module disperses the uniformly flowing slurry solution. The slurry solution is a grinding abrasive 'which mechanically wears the surface of the semiconductor wafer to remove unwanted materials. As the number of semiconductor wafers processed by the machine increases, the polishing pads in the polishing pad group become smooth because of repeated polishing and polishing of semiconductor wafers. The polishing pad can be roughened again by the polishing pad finishing device. In addition, because the polishing pattern and the pressure of the polishing head can cause uneven wear, the polishing pad finishing device also has the function of maintaining the level of the polishing pad. An area protruded from the height of the polishing pad is polished by using a polishing pad finishing device to keep the polishing pad level. FIG. 1 schematically shows a polishing pad finishing device of a conventional technology, which is suitable for a chemical mechanical polishing device 110 for polishing semiconductor wafer materials, and includes a polishing pad 14 for finishing polishing pads 15 on a polishing table 15 The polishing pad finisher 160 includes a polishing slurry conveying pipe 18 for injecting a polishing slurry solution onto the polishing pad 14. The polishing pad organizer 160 includes a polishing pad support 170 and a polishing disc 171 to arrange the polishing pad 14 and remove the polishing pad material, such as the polished semiconductor wafer material and the polishing slurry solution remaining on the polishing pad 14 Low-grain, where the grinding disc 1 7} is, for example, a non-scale steel disc containing diamond particles. In the prior art, the polishing pad finisher 160 for arranging polishing pads uses only a polishing disk 1 71 to sort the polishing pads 丨 4 and remove polishing pad materials, such as polished semiconductor wafer materials and residues on the polishing pads. Grinding granules of the slurry solution on 14. Polishing pad organizer 丨 6 〇 Cannot be effectively removed in

200408506 五、發明說明（3) :磨=1 4上帶電荷之微小粒子例如為氧化物、金屬及殘留在研磨墊1 4内的研磨漿之研磨砥粒。【發明概要】有鑑於此，本發明的主要目的就是提供一種本發明之研磨塾整理裝置與制其整理研磨塾之方法，±述研磨塾整理裝置中包括-研磨墊整理器，其具有一研磨盤及一研磨支撐架並具有一電極附加在研磨#夕卜或以研磨盤為電 =及一相反電極設置於研磨墊内，並藉由一偏壓產生器以加加偏壓於上述兩電極之間，以於研磨墊及研磨盤間產生一電場。藉由此電場使研磨盤吸引及吸附帶電荷粒子，而帶電荷粒子係來自於研磨掉的半導體晶圓材料及殘留在研磨墊上之研磨漿溶液内之研磨砥粒。而利用本發明之研磨墊整理器整理研磨墊之方法包括·轉動一内設置有一相反電極之研磨墊；轉動具有一研磨盤及一研磨支撐架之一研磨墊整理器，於研磨墊整理器内設置有一電極；以研磨墊整理器之上研磨盤接觸研磨墊以整理研磨墊，以及施加一偏壓於上述相反電極及電極間以產生一電場使得研磨盤吸附或吸引帶電荷粒子。【發明之詳細說明】為讓本發明之上述和其他目的、特徵、和優點能更明顯易It，下文特舉出較佳實施例，並配合所附圖式，作詳細說明如下：實施方法：【實施例】200408506 V. Description of the invention (3): The charged particles on the mill = 14 are, for example, the abrasive particles of oxides, metals and polishing slurry remaining in the grinding pad 14. [Summary of the Invention] In view of this, the main object of the present invention is to provide a polishing / finishing device and a method for manufacturing the polishing / finishing device of the present invention. The polishing / finishing device includes a polishing pad finisher, which has a polishing pad. Plate and a grinding support frame with an electrode attached to the grinding pad or using the grinding plate as an electric = and an opposite electrode is arranged in the grinding pad, and a bias generator is used to bias the two electrodes. An electric field is generated between the polishing pad and the polishing disc. The electric field causes the polishing disk to attract and adsorb charged particles, and the charged particles are derived from the polished semiconductor wafer material and the abrasive particles in the polishing slurry solution remaining on the polishing pad. The method for finishing the polishing pad by using the polishing pad organizer of the present invention includes: rotating a polishing pad provided with an opposite electrode therein; rotating a polishing pad finisher having a polishing disc and a polishing support frame in the polishing pad finisher; An electrode is provided; the polishing pad is contacted with the polishing pad on the polishing pad finisher to arrange the polishing pad, and a bias voltage is applied between the opposite electrode and the electrode to generate an electric field to cause the polishing disk to adsorb or attract charged particles. [Detailed description of the invention] In order to make the above and other objects, features, and advantages of the present invention more obvious and easy, the following specifically lists the preferred embodiments, and in conjunction with the accompanying drawings, the detailed description is as follows: Implementation method: [Example]

200408506 五、發明說明（4) 如第2圖中所示’為本發明實施例中之適用於研磨半導體晶圓之化學機械研磨設備中之研磨墊整理裝置。首先 &供一化學機械研磨設備21〇，於此化學機械研磨設備内具有研磨墊14，其設置於研磨平台250上，並可配合一半導體晶圓載具（未顯示）的使用以用於化學機械研磨半導體晶圓。此外，於研磨墊14内設置有一相反電極273，而於研磨塾14上則進一步設置了研磨漿輸送管路2 8〇用以注流研磨漿溶液（例如作為研磨砥粒之31〇2或Ai3〇4及研磨化學物及水所組成之研磨漿溶液，pH值介於pH 2〜1 2)於研磨塾14上’而研磨墊整理器260中則設置有研磨器支撐架 270及用以整理（scrub)研磨墊14並去除研磨墊物質之研磨盤271 ’此研磨盤271例如為含有鑽石粒子之不銹鋼盤。於研磨墊整理器260内亦設置有一電極272，電極272可附加於研磨盤271外或以研磨盤271為電極2 72。此外另設置有一偏壓產生器274以施力口一偏壓（介於0·5〜5· 0 volts) 於相反電極2 73與電極27 2間以於研磨墊14及研磨盤271間產生一電場。研磨盤271藉由此電場以吸引及吸附帶電荷粒子’此帶電荷粒子例如為研磨掉的半導體晶圓材料及殘留在研磨墊1 4上的研磨漿溶液中之研磨砥粒。再者，利用本發明之研磨墊整理器2 6 0整理研磨墊1 4 之方法，其步驟如下：轉動研磨平台250以轉動設置有相反電極273於内之研磨墊14 ;轉動具有研磨支撐架270及研磨盤271之研磨墊整理器260，而研磨墊整理器260内設置有一電極272 ;以研200408506 V. Description of the invention (4) As shown in Fig. 2 ', this is a polishing pad finishing device in a chemical mechanical polishing equipment for polishing semiconductor wafers in the embodiment of the present invention. First of all, a chemical mechanical polishing device 21 is provided. A polishing pad 14 is provided in the chemical mechanical polishing device. The polishing pad 14 is disposed on a polishing platform 250 and can be used with a semiconductor wafer carrier (not shown) for chemical Mechanical grinding of semiconductor wafers. In addition, an opposite electrode 273 is provided in the polishing pad 14, and a polishing slurry conveying pipe 2 80 is further provided on the polishing pad 14 for injecting a slurry solution (for example, 3102 or Ai3 as a polishing pad). 〇4 and polishing chemicals consisting of grinding chemicals and water, the pH value is between pH 2 ~ 1 2) on the polishing pad 14 'and the polishing pad organizer 260 is provided with a grinder support frame 270 and used for finishing A polishing disc 271 that polishes the polishing pad 14 and removes the polishing pad material. This polishing disc 271 is, for example, a stainless steel disk containing diamond particles. An electrode 272 is also provided in the polishing pad organizer 260. The electrode 272 may be attached to the polishing disc 271 or the polishing disc 271 is used as the electrode 2 72. In addition, a bias generator 274 is provided to apply a bias voltage (between 0.5 · 5 to 5.0 volts) between the opposite electrode 2 73 and the electrode 27 2 to generate a voltage between the polishing pad 14 and the polishing disk 271. electric field. The polishing disk 271 uses the electric field to attract and adsorb charged particles. The charged particles are, for example, the semiconductor wafer material that has been polished and the abrasive particles remaining in the polishing slurry solution on the polishing pad 14. Furthermore, the method of using the polishing pad organizer 2 60 of the present invention to arrange the polishing pad 14 is as follows: Turn the polishing platform 250 to rotate the polishing pad 14 provided with the opposite electrode 273 inside; rotate the polishing support 270 And polishing pad organizer 260 of the polishing disc 271, and an electrode 272 is provided in the polishing pad organizer 260;

- 7524TWF(η 1); p910096; shawnchang. p td 第 8 頁 200408506 五、發明說明（5) 磨墊整理器260之研磨盤271接觸研磨墊η，以整理研磨墊 14，以及藉由偏壓產生器274施加一偏壓於相反電極273及電極272間以產生一電場使得研磨盤27ι吸附或吸引帶電荷粒子。此外’如果選擇Si〇2或Al3〇4為研磨砥粒懸浮於pH 2 〜6研磨漿溶液中，根據膠體化學理論，“〇2或Ai3〇4研磨砥粒將帶正電荷。如果使用上述研磨漿溶液去研磨金屬膜層，Si 〇2 / A ls〇4研磨砥粒及金屬膜研磨物兩者都帶正電荷。因此，當偏壓產生器274施加一負偏壓於相反電極273 與電極272間之電極272上，帶正電荷粒子則被吸引及吸附到研磨盤271上。反之，如果選擇si〇2或Ai3〇4為研磨砥粒懸浮於pH 9 〜12研磨聚溶液中，根據膠體化學理論，Si〇2或人1'3〇4研磨砥粒將帶負電荷。如果使用上述研磨漿溶液去研3磨4氧化膜層，Si〇2 / Al3〇4研磨砥粒及氧化膜研磨物兩者都帶負電荷。因此，當偏壓產生器274施加一正偏壓於相反電極 273與電極272間之電極2 72上，帶正電荷粒子則吸附到研磨盤271上。雖然本發明已以較佳實施例揭露如上，然其並非用以限定本發明，任何熟習此技藝者，在不脫離本發明之和範圍内，當可作各種之更動與潤飾，因此本發明之^ 範圍當視後附之申請專利範圍所界定者為準。 ”。-7524TWF (η 1); p910096; shawnchang. P td page 8 200408506 V. Description of the invention (5) The polishing pad 271 of the polishing pad organizer 260 contacts the polishing pad η to arrange the polishing pad 14 and generate it by biasing The device 274 applies a bias voltage between the opposite electrode 273 and the electrode 272 to generate an electric field so that the abrasive disc 27m absorbs or attracts charged particles. In addition, 'If you choose Si02 or Al304 as the ground particles suspended in a slurry solution of pH 2 ~ 6, according to colloidal chemistry theory, "0 or Ai304 ground particles will have a positive charge. If you use the above grinding The slurry solution was used to grind the metal film layer. Both the Si 〇 2 / Al s04 abrasive particles and the metal film abrasive were positively charged. Therefore, when the bias generator 274 applied a negative bias to the opposite electrode 273 and the electrode On the electrode 272 between 272, the positively charged particles are attracted and adsorbed on the grinding disc 271. On the other hand, if you choose SiO2 or Ai304 as the abrasive particles suspended in the abrasive polymer solution at pH 9 ~ 12, according to the colloid In chemical theory, Si02 or human 1'304 grinding particles will be negatively charged. If the above slurry solution is used to grind 3 grinding and 4 oxide film layers, Si02 / Al3 04 grinding particles and oxide film grinding Both objects are negatively charged. Therefore, when the bias generator 274 applies a positive bias to the electrode 2 72 between the opposite electrode 273 and the electrode 272, the positively charged particles are attracted to the polishing disc 271. Although the present invention It has been disclosed above in a preferred embodiment, but it is not intended to limit the present invention. Any person skilled in this art, without departing from the scope of the invention and, when it may make various modifications and variations, thus the scope of the present invention ^ as defined depending on the scope of the appended patent application, whichever. ".

200408506200408506

Claims

200408506 六、申請專利範圍 1· 一種研磨塾整理裝置，適用於研磨半導體晶圓之化學機械研磨設備中，包括：一研磨墊’具有一相反電極設置於該研磨墊内；一研磨墊整理器，具有一研磨盤及一研磨支撐架，且該研磨塾整理器内設置有一電極；以及偏壓產生器’用於施加一偏壓於該相反電極及電極間以於該研磨盤與該研磨墊間產生一電場以吸附或吸引帶電荷粒子。 2 ·如申請專利範圍第1項所述之研磨墊整理裝置，其中該化學機械研磨設備進一步包括一半導體晶圓載具及一轉動研磨平臺，以用於化學機械研磨一半導體晶圓。 3·如申請專利範圍第丨項所述之研磨墊整理裝置，其中進一步包括一研磨漿輸送管路，用於注流一研磨漿溶液於該研磨墊上。 4 ·如申請專利範圍第3項所述之研磨墊整理裝置，其中該研磨漿溶液包括（a) Si〇2或A 13 04及（b)研磨化學物及 (c)水，其中該研磨漿溶液ipH值介於pH 2〜1 2。 5 ·如申請專利範圍第1項所述之研磨墊整理裝置，其中該研磨盤係設置於該研磨墊整理器上，且該研磨盤為一含有鑽石粒子之不銹鋼盤。 6 ·如申請專利範圍第1項所述之研磨墊整理裝置，其中於該研磨塾内設置之該相反電極及於該研磨墊整理器内设置之遠電極間所施加之該偏壓介於0 · 5〜5. 0 v ο 1 t s。 7 · —種利用研磨墊整理裝置整理研磨墊之方法，適用200408506 VI. Application Patent Scope 1. A polishing and finishing device suitable for chemical mechanical polishing equipment for polishing semiconductor wafers, including: a polishing pad having an opposite electrode disposed in the polishing pad; a polishing pad finisher, It has a polishing disc and a polishing support frame, and an electrode is arranged in the polishing pad finisher; and a bias generator 'for applying a bias voltage between the opposite electrode and the electrode between the polishing disc and the polishing pad An electric field is generated to attract or attract charged particles. 2. The polishing pad finishing device according to item 1 of the scope of patent application, wherein the chemical mechanical polishing device further includes a semiconductor wafer carrier and a rotating polishing platform for chemical mechanical polishing of a semiconductor wafer. 3. The polishing pad finishing device according to item 丨 in the scope of the patent application, further comprising a slurry delivery pipeline for injecting a slurry solution onto the polishing pad. 4 · The polishing pad finishing device according to item 3 of the scope of the patent application, wherein the polishing slurry solution includes (a) Si02 or A 13 04 and (b) polishing chemicals and (c) water, wherein the polishing slurry The ipH value of the solution is between pH 2 and 12. 5. The polishing pad finishing device according to item 1 of the scope of patent application, wherein the polishing disc is arranged on the polishing pad finisher, and the polishing disc is a stainless steel disc containing diamond particles. 6. The polishing pad finishing device according to item 1 of the scope of patent application, wherein the bias voltage applied between the opposite electrode provided in the polishing pad and the remote electrode provided in the polishing pad organizer is between 0 5 to 5. 0 v ο 1 ts. 7 · —A method for finishing polishing pads using a polishing pad finishing device, applicable

^ Qi89-7524TWF(η1)ip910096;shawnchang.ptd 第11頁 200408506 六、申請專利範圍於研磨半導體晶圓之化學機械研磨設備中，包括·· 轉動一内設置有一相反電極之研磨墊；轉動具有一研磨盤及一研磨支撐架之一研磨墊整理杰’其中該研磨墊整理器内設置有一電極；以該研磨墊整理器之上該研磨盤接觸該研磨墊，以整理該研磨墊；以及施加一偏壓於該相及電極及該電極間以產生一電場使得該研磨盤吸附或吸引帶電荷粒子。 8 ·如申請專利範圍第7項所述之利用研磨墊整理裝置整理研磨墊之方法，更包括注流一研磨漿溶液於該研磨墊上之步驟，其中該研磨漿溶液介於pH 9〜12時，係於該相反電極及該電極間，對該電極施加一正偏壓。 9 ·如申研專利範圍第7項所述之利用研磨墊整理裝置整理研磨墊之方法’更包括注流一研磨漿溶液於該研磨墊上之步驟，其中該研磨漿溶液介於pH 2〜6時，係於該相反電極及該電極間，對該電極施加一負偏壓。敫田1 〇治如申明專利範圍第7項所述之利用研磨墊整理裝置 ^研塾之方法’其中該研磨盤固定在該研磨墊整理器上，1該研磨 ^為1含有鑽石粒子之不銹鋼盤。墼拂；^ ·府如奴#專利圍第7項所述之利用研磨塾整理裝置整理研磨墊之方法，i中 ,^ ^ ^ ^ ^ τ於该相反電極及於該電極間所施加之該偏壓介於〇. 5〜5 η ' ,^ Qi89-7524TWF (η1) ip910096; shawnchang.ptd Page 11 200408506 6. The scope of patent application for chemical mechanical polishing equipment for polishing semiconductor wafers includes: · rotating a polishing pad with an opposite electrode inside; rotating with a One of the polishing pad and a polishing support frame is provided with an electrode; the polishing pad finisher is provided with an electrode; the polishing pad contacts the polishing pad on the polishing pad finisher to arrange the polishing pad; and Biasing between the phase and the electrode and the electrode to generate an electric field causes the grinding disc to adsorb or attract charged particles. 8 · The method for finishing a polishing pad using a polishing pad finishing device as described in item 7 of the scope of the patent application, further comprising the step of injecting a polishing slurry solution on the polishing pad, wherein the polishing slurry solution is between pH 9 and 12 Is connected between the opposite electrode and the electrode, and a positive bias is applied to the electrode. 9 · The method for finishing a polishing pad using a polishing pad finishing device as described in item 7 of the scope of Shenyan's patent, further comprising the step of injecting a polishing slurry solution on the polishing pad, wherein the polishing slurry solution is between pH 2 and 6 At this time, a negative bias is applied to the electrode between the opposite electrode and the electrode. Putian 1 0 The method of using a polishing pad finishing device as described in Item 7 of the declared patent scope ^ Research method 'wherein the polishing disc is fixed on the polishing pad finisher, 1 the polishing ^ is 1 stainless steel containing diamond particles plate. The method of arranging a polishing pad using a polishing pad finishing device as described in the seventh item of the furu slave # patent encirclement, i., ^ ^ ^ ^ ^ Τ is applied to the opposite electrode and between the electrodes. The bias voltage is between 0.5 and 5 η ',