TW200408496A - Polishing pad with window - Google Patents

Polishing pad with window Download PDF

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Publication number
TW200408496A
TW200408496A TW92121926A TW92121926A TW200408496A TW 200408496 A TW200408496 A TW 200408496A TW 92121926 A TW92121926 A TW 92121926A TW 92121926 A TW92121926 A TW 92121926A TW 200408496 A TW200408496 A TW 200408496A
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Taiwan
Prior art keywords
layer
item
adhesive substance
patent application
polishing pad
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TW92121926A
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Chinese (zh)
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TWI243735B (en
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Andreas Norbert Wiswesser
Boguslaw A Swedek
Jason Wright
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Applied Materials Inc
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Abstract

Polishing pads with a window, systems containing such polishing pads, and processes that use such polishing pads are disclosed. For example, a light beam (34) having a wavelength between about 300 and 500 nm may be directed through a transparent portion (44) of a polishing surface of a polishing pad (18) during polishing in one of a shallow trench isolation (STI) fabrication process, a spin-on glass fabrication process and a silicon-on-insulator (SOI) fabrication process. As another example, the polishing pad may include a backing layer (116), a polishing layer (120), a solid window (140), and layers of first and second different adhesive materials (150, 160) between the backing layer and the solid window.

Description

200408496 玖、發明說明 【發明所屬之技術領域】 本發明大體上係關於具有窗口的研磨墊,包含此研磨 墊的系統,及使用此研磨墊的處理。 【先前技術】 現代的積體電路(ic)的製程通常涉及形成不同的物質 層與結構於先前形成的層與結構上。然而,底下的特徵結 構會在一處理中的基材的頂面上留下極不規則性,如具有 壟起,高度不均的區域,凹槽,溝渠及/或其它表面不規 則。這些不規則會造成在微影成像技術上造成問題。因此, 需要實施某種基材平坦化處理。 達成半導體基材平坦化或拓樸移除的一種方法為化學 機械研磨(CMP)處理。一傳統的化學機械研磨(CMP)處理 涉及了在有泥漿,如研磨泥漿,存在下用一旋轉的研磨墊 來處理基材。 通常,偵測所想要的表面平坦性或層厚度是否已達到 及/或底下的層是否已外露是必要的,用以決定是否停止 研磨。目前已有數種技術被開發來在 CMP處理期間在研 磨現地债測終止點。例如,一種光學監視系統用來在層的 研磨期間在現地測量一基材上的層的均勻度。該光學監視 系統可包括一光源其可在研磨期間將光束導向該基材,一 偵測器其測量從該基材被反射的光,及一電腦其分析來自 於該偵測器的訊號並計算是否已經到達終止點。在某些 3 200408496 CMP 導向 表面 【發 材的 帶至 一旋 處理 動被 穿過 射會 主要 如介 光束 氧化 處理 及一 有開 對齊 口内 系統中,該光束是經由一位在該研磨墊上的窗口被 該基材的。一泥漿層典型地存在該基材與該窗口的上 之間。 明内容】 在本發明的一個態樣中,本發明係關於一種研磨一基 方法。在該方法中,一具有透明部分的研磨表面會被 與一基材相接觸,該基材在一淺溝渠隔離(STI)製程, 轉塗佈玻璃製程及一絕緣體上的矽(S ΟI)製程的一個 中需要研磨。在該研磨表面與該基材之間會有相對運 造成,一波長介於300至5 OOnm之間的光束被導引 該研磨表面的透明部分,且來自於該基材的光束的反 被偵測到用以決定一研磨的終止點。 本發明的實施例可包括一或多個以下的特徵。該光束 包含藍光’如藍(紫藍)光。該光束可具有約400nm’ 於400至415nm之間,像是405nm的波長。或者該 可具有約470 nm的波長。該基材可具有一最外層的 物層其具有一約1000至2000埃(入)的厚度。該研磨 可以是淺溝渠隔離(STI)製程’ 一旋轉塗佈玻璃製程 絕緣體上的矽(S01)製程中的一個步驟。 在另一態樣中,本發明係關於一種研磨塾其具有一帶 口的背襯層,一研磨層其具有一與在背襯層上的開口 之開口 ,一第一材質製成的實心窗口位在研磨層的開 ,一介於該背襯層與實心窗口之間的第一黏著物質 4 200408496 層 層 黏 間 氰 該 物 可 物 磨 襯 第 法 磨 黏 法 處 該 研 法 ,及一介於該背襯層與實心窗口之間的第二黏著物質 ,該第二黏著物質不同於第一黏著物質。 本發明的實施例可包括一或多個以下的特徵。一第三 著物質層介於該第一黏著物質層與該第二黏著物質層之 。該第一黏著物質包括一聚合物,像是丙烯酸酯聚合物, 基丙烯酸酯聚合物,多元烯烴聚合物,或氟化聚合物。 第一黏着物質可以是一雙塗佈的薄膜膠帶。該第一黏著 質層及該第二黏著物質層可以相鄰,該第一黏著物質層 以是丙烯酸酯聚合物,及該第二黏著物質層可以是第一 質的引發劑(primer)。該背襯層的一部分可延伸於該研 層的開口底下,該第一黏著物質層可延伸於該部分的背 層之上。該第一黏著物質層包括一多元烯烴聚合物且該 二黏著物質層可包括一丙烯酸酯聚合物。 在另一態樣中,本發明係關於一種建構一研磨墊的方 。範圍大致相同的第一及第二黏著物質層被***到一研 墊上的一開口中,及一實心物質的窗口被附著到該第一 著物質層的一表面上。 在另一態樣中,本發明係關於一種建構一研磨墊的方 。一透明物件的表面被改良,改良的方法是由電暈放電 理,火燄處理及氟氣體處理所構成的組群中選取的,及 物件被固定在一研磨層上的一開口中,該研磨層具有一 磨表面。 在另一態樣中,本發明係關於一種研磨一基材的方 。該方法包括將具有一透明部分的一研磨表面帶至與一 5 200408496 基材接觸,造成該研磨表面與該基材之間的相對運動 一波長介於300至5 OOnm的光束導引穿過該研磨表 透明部分,及偵測從該基材被反射的光束用以決定一 終止點。 在另一態樣中,本發明係關於一種研磨墊,其具 有一研磨表面的研磨層,及一位在該研磨層中的物質 心窗口 。該物質具有約40mJ/m2或更低的表面能量。 在另一態樣中,本發明係關於一種研磨墊,其具 帶有一開口的背襯層,一研磨層其具有一與在該背襯 的開口對齊的開口 ,一位在該研磨層的開口内之第一 的實心窗口 ,及一介於該背襯層與該窗口之間的黏著 層。該黏著物質包括一選自於由多元烯烴聚合物及丙 酯聚合物所構成的組群中的物質。 在另一態樣中,本發明係關於用在一研磨墊上 口。該窗口具有一透明實心物件其具有一表面,一第 著物質層其具有第一及第二表面,該第一黏着物質層 一表面被設置成與該物件的表面相抵靠,及一第二黏 質層其具有一表面,該第二黏著物質層的表面被設置 該第一黏著物質層的第二表面相抵靠。該第二黏著物 同於第一黏著物質。 在某些實施例中,使用在這些方法中的窗口研磨 構會表現出一或多項下列的特性:在特定波長的能量 良好的透射性;具有可忽略的漫射;對於在 C Μ P處 間的刮痕及/或研磨具有很好的抵抗性;具有良好的 ,將 面的 研磨 有一 的實 有一 層上 物質 物質 烯酸 的窗 一黏 的第 著物 成與 質不 墊結 具有 理期 流體 6 200408496 (如泥聚或水)防漏性;及/或具有相對低的折射率 _ 此窗口研磨墊結構的CMP系統可表現出一式/ ^ ^ %夕項下列所 想要的特性·在窗口的上表面導因於刮痕及 現則的光束 散射及反射被變少;在窗口與泥漿界面 的尤束反射會變 少;來自於偵測器的訊號中之訊號對雜 抑讯的比例可被改 善;在窗口周圍的泥漿滲漏會減少。 在某些實施例中,即使是窗口是由低表面能量的物質 (如’對許多其它物質的黏著性低)所製成 、200408496 2. Description of the invention [Technical field to which the invention belongs] The present invention generally relates to a polishing pad having a window, a system including the polishing pad, and a process using the polishing pad. [Previous Technology] The process of modern integrated circuit (IC) usually involves forming different material layers and structures on the previously formed layers and structures. However, the underlying features can leave extremely irregularities on the top surface of a substrate being processed, such as ridges, uneven height areas, grooves, ditches, and / or other surface irregularities. These irregularities can cause problems in lithography imaging techniques. Therefore, it is necessary to perform a certain substrate flattening treatment. One method to achieve planarization or topology removal of semiconductor substrates is a chemical mechanical polishing (CMP) process. A conventional chemical mechanical polishing (CMP) process involves treating a substrate with a rotating polishing pad in the presence of a slurry, such as a polishing slurry. In general, it is necessary to detect whether the desired surface flatness or layer thickness has been reached and / or whether the underlying layer has been exposed to determine whether to stop grinding. Several technologies have been developed to grind on-site debt testing termination points during the CMP process. For example, an optical monitoring system is used to measure the uniformity of a layer on a substrate in situ during the grinding of the layer. The optical monitoring system may include a light source that directs a light beam to the substrate during grinding, a detector that measures light reflected from the substrate, and a computer that analyzes signals from the detector and calculates Whether the termination point has been reached. In some 3 200408496 CMP guide surfaces, the belt of the hair material is passed through a spinning process, such as a medium beam oxidation process and an open-aligned intraoral system. The beam is passed through a window on the polishing pad. By the substrate. A layer of mud is typically present between the substrate and the top of the window. Contents of the Invention In one aspect of the present invention, the present invention relates to a grinding method. In this method, a polished surface with a transparent portion is contacted with a substrate that is in a shallow trench isolation (STI) process, a transfer-coating glass process, and a silicon-on-insulator (SOI) process. One needs to be ground. There will be relative movement between the abrasive surface and the substrate. A light beam with a wavelength between 300 and 500 nm is guided to the transparent part of the abrasive surface, and the anti-detection of the light beam from the substrate Measured to determine the end point of a mill. Embodiments of the invention may include one or more of the following features. The light beam contains blue light 'such as blue (purple blue) light. The beam may have a wavelength between about 400 nm 'and 400 to 415 nm, such as a wavelength of 405 nm. Alternatively, it may have a wavelength of about 470 nm. The substrate may have an outermost layer having a thickness of about 1000 to 2000 angstroms. This polishing can be a step in the shallow trench isolation (STI) process'-a spin-on-glass process, a silicon on insulator (S01) process. In another aspect, the present invention relates to a grinding pad having a backing layer with a mouth, a grinding layer having an opening with an opening in the backing layer, and a solid window made of a first material. At the opening of the abrasive layer, a first adhesive substance between the backing layer and the solid window 4 200408496 layer-by-layer adhesive cyanide the material can be ground by the grinding method and the method, and a A second adhesive substance between the liner and the solid window, the second adhesive substance being different from the first adhesive substance. Embodiments of the invention may include one or more of the following features. A third adhesive material layer is interposed between the first adhesive material layer and the second adhesive material layer. The first adhesive substance includes a polymer, such as an acrylate polymer, a base acrylate polymer, a polyolefin polymer, or a fluorinated polymer. The first adhesive substance may be a double-coated film tape. The first adhesive substance layer and the second adhesive substance layer may be adjacent to each other, the first adhesive substance layer may be an acrylate polymer, and the second adhesive substance layer may be a primary initiator. A part of the backing layer may extend under the opening of the ground layer, and the first adhesive substance layer may extend above the backing layer of the part. The first adhesive substance layer includes a polyolefin polymer and the two adhesive substance layers may include an acrylate polymer. In another aspect, the invention relates to a method for constructing a polishing pad. First and second adhesive substance layers having substantially the same range are inserted into an opening on a research pad, and a window of a solid substance is attached to a surface of the first adhesive substance layer. In another aspect, the invention relates to a method for constructing a polishing pad. The surface of a transparent object is improved. The improved method is selected from the group consisting of corona discharge treatment, flame treatment and fluorine gas treatment, and the object is fixed in an opening on an abrasive layer. The abrasive layer Has a ground surface. In another aspect, the invention relates to a method for grinding a substrate. The method includes bringing an abrasive surface with a transparent portion into contact with a 5 200408496 substrate, causing relative movement between the abrasive surface and the substrate, and directing a light beam having a wavelength between 300 and 500 nm through the The transparent part of the surface is ground, and the light beam reflected from the substrate is detected to determine an end point. In another aspect, the present invention relates to a polishing pad having a polishing layer having a polishing surface and a material core window in the polishing layer. The substance has a surface energy of about 40 mJ / m2 or less. In another aspect, the present invention relates to a polishing pad having a backing layer with an opening, a polishing layer having an opening aligned with the opening in the backing, and an opening in the polishing layer. The first solid window inside, and an adhesive layer between the backing layer and the window. The adhesive substance includes a substance selected from the group consisting of a polyolefin polymer and a propylene polymer. In another aspect, the invention is directed to use on a polishing pad. The window has a transparent solid object having a surface, a first material layer having first and second surfaces, a surface of the first adhesive material layer being disposed to abut the surface of the object, and a second adhesive The mass layer has a surface, and the surface of the second adhesive substance layer is abutted by the second surface of the first adhesive substance layer. The second adhesive is the same as the first adhesive. In some embodiments, the window mill structures used in these methods exhibit one or more of the following characteristics: good transmission of energy at specific wavelengths; negligible diffusion; and The scratches and / or grinding have good resistance; have a good, ground surface with a layer of material material enoic acid, a sticky first object to form a solid fluid with a solid structure 6 200408496 (such as mud or water) leak-proof; and / or have a relatively low refractive index_ The CMP system of this window polishing pad structure can show the desired characteristics below the formula / ^ ^% in the window The upper surface is reduced due to scratches and current beam scattering and reflection; the beam reflection at the interface between the window and the mud will be reduced; the ratio of the signal to the noise suppression in the signal from the detector can be reduced. Improved; leakage of mud around the window will be reduced. In some embodiments, even if the window is made of a low surface energy substance (e.g., 'low adhesion to many other substances),

x彳乃然會有至少 雨種這些特性(如,所有特性)被表現出來。 °仕I成該窗 口的該物質具有相對低表面能量(如,聚氟 狀G烯)時及當 該窗口物質在可見光譜的藍光範圍内(如,從 1 4〇〇nm 至 約450nm,像是從約400nm至約410nm^良好的透射性 時是特別有利的,在使用一藍光雷射或一藍光Led作為 光源時該波長範圍是較佳的。 本發明的特徵,物件及優點可從以下的說明,圖式及 申請專利範圍中看出。x 彳 是 然 , at least these characteristics (for example, all the characteristics) of the rain are exhibited. ° The material that forms the window has a relatively low surface energy (eg, polyfluorinated Gene) and when the window material is in the blue light range of the visible spectrum (eg, from 140nm to about 450nm, like It is particularly advantageous when the transmittance is from about 400 nm to about 410 nm. The wavelength range is better when a blue laser or a blue LED is used as the light source. Features, objects and advantages of the present invention can be obtained from See the description, drawings and patent application scope.

【實施方式】 如第1圖所示的,一 CMP設備10包括一研磨頭12 用來將一半導體基材14保持與一平台16上的研磨墊18 相頂抵。該 CMP設備被揭示在美國專利第5,738,574及 6,247,998號以及2003年二月4日提申之美國專利申請案 第 1 0/3 58,852 號,名稱為"Substrate Monitoring During Chemical Mechanical Polishing”中,這些專利案的内容藉 7 200408496 由此參照被併於本文中。[Embodiment] As shown in FIG. 1, a CMP apparatus 10 includes a polishing head 12 for holding a semiconductor substrate 14 against a polishing pad 18 on a platform 16. The CMP equipment is disclosed in U.S. Patent Nos. 5,738,574 and 6,247,998 and U.S. Patent Application No. 10/3 58,852 filed on February 4, 2003, entitled " Substrate Monitoring During Chemical Mechanical Polishing " The contents of the case are incorporated herein by reference.

研磨墊18可以是一兩層的墊子,其具有一與該平台 16相界接的背襯層20及一覆蓋層22其具有一研磨表面 與該基材相接觸。例如,該覆蓋層 2 2可以是一耐久的粗 糙層(如,Rodel IC-1000),而該背襯層可以是一更可壓縮 的層(如,Rodel Suba-IV)。然而,某些塾子只具有一覆蓋 層而沒有背襯層。或者,該研磨墊可以是一固定式研磨的 墊子其研磨顆粒被保持在一容納媒體中。 典型地,該研磨墊物質被化學研磨溶液或具有化學反 應劑的泥漿所浸濕,起採用一”標準的”研磨墊,研磨顆粒。 然而,有些研磨處理是”無研磨的”。The polishing pad 18 may be a two-layered pad having a backing layer 20 and a cover layer 22 which interface with the platform 16 and which have a polishing surface in contact with the substrate. For example, the cover layer 22 may be a durable rough layer (e.g., Rodel IC-1000), and the backing layer may be a more compressible layer (e.g., Rodel Suba-IV). However, some dumplings have only a cover layer and no backing layer. Alternatively, the abrasive pad may be a fixed abrasive pad in which abrasive particles are held in a receiving medium. Typically, the polishing pad material is wetted with a chemical polishing solution or slurry with a chemical reagent, and a "standard" polishing pad is used to grind the particles. However, some grinding processes are "non-grinding."

一孔30被形成在該平台16的頂面上且與一形成在研 磨墊18上的窗口 26對齊。該窗口可以是一實心的透明插 入物44其被固定在該覆蓋層22上。一孔洞46可被形成 穿過該背襯層2 0且與窗口 3 6對齊。此外,至少一部分的 孔3 6可被填以一透明的實心件3 1,像是石英塊。該孔3 0 及窗口 3 6被設置成無論該研磨頭1 2的移動位置為何,它 們都可在該平台的旋轉期間看到被該研磨頭 1 2所固持之 基材14。 一光學監視系統被固定在該平台16的頂面底下,該 光學監視系統包括一光源 3 2 (如,一雷射,像是一紅光雷 射,一藍光雷射,或一紅外線雷射,或一發光二極體,像 是一紅光發光二極體,一藍光發光二極體,或一紅外線發 光二極體)及一偵測器 42(如,一光學偵測器)。例如,該 8 200408496 光學監視系統可位在該平台16上的一凹部17内且可與該 平台一起旋轉。或者,該光學監視系統可以是一不動的系 統位在該平台底下。該光源32透射出一光束34穿過孔30 及在研磨墊18上的窗口 36用以至少在窗口 36與基材14 相鄰的期間打擊到基材的表面(如,一半導體基材)。。從 基材反射回來的光形成一結果光束60其被偵測器42偵測 到。一未示出的電腦接收來自於該偵測器 42之經過測量 的的光強度並使用它來決定研磨終點,如藉由偵測代表一 新的層曝露出來之基材的反射性的突然改變,藉由使用干 涉儀原理來計算從外層(如,一透明的氧化物層)被移除掉 的厚度,或藉由監視預定的終點條件之訊號,來決定。 在研磨作業期間施用到研磨墊1 8上的泥漿可形成一 介於基材14與研磨墊18之間的層38。然而介於窗口 36 與研磨墊1 8之間的界面被密封,使得泥漿3 8不會外漏至 平台16。 窗口 3 6應具有下列特性中的至少一些特性:對於泥 漿或使用在研磨處理中的其它物質的化學抵抗性;良好的 光學清晰度(如,在光束的波長範圍内至少 2 5 %的透光 性);一低折射係數(如小於 1.48);折射係數約與泥漿的 折射係數相同;無漫射;及光學等方向性。該窗口可以是 一聚合物材質,如聚氨酯或氟聚合物。 一約與泥漿的折射係數相同的低折射係數及高光學清 晰度可降低來自於空氣/窗口 /水界面的反射並改善光線來 回穿過窗口的透光性,藉以改善訊號對雜訊的比例。光學 9 200408496 清晰度應要夠高用以提供至少約 25 %(如,至少約 50%, 至少約 80%,至少約90%,至少約95%)之偵測器所用的 光束之波長範圍的光線透光性。典型的波長範圍包括可見 光譜(如,從約400nm至約800nm),紫外光(u V)光譜(如, 從約3 0 0 n m至約4 0 0 n m ),及/或紅外線光谱(如,從8 0 0 n m 至約1 5 5 0nm)。在某些實施例中,波長範圍可以再可見光 譜的一特定部分内’像是可見光的藍光部分(如,從約 4 00nm 至約 470nm,從約 400nm 至約 415nm,從約 400nm 至約 41 t)nm ,"一 _ 中’對於該物質而言’在藍光及UV光線附近的低波長範 圍(如’小於約4 1 5 n m)具有高透光性(如,至少約8 〇 〇/〇 , 至少約90%,至少約95%)是所想要的。 這些低波長在使用固定式研磨(FA)或高選择性泥漿 (HSS)的淺溝渠絕緣”丁^期間實施光學測量時是很有用 的。使用可產生波長在400_4 1 5nm之間的光束之光源在 研磨中是有利的。—STI裝置的作用區(從最外層)開始有 一約1〇〇〇_2000埃厚的氧化物層,-氣化物層,-薄的氧 化物層(約200埃),及最終 ’在STI研磨處理期間, 將最外層的氧化物層從作用 L古除掉,並在氮化物層傧 止,最好是移除小於200埃的氮 7 化物層被去除掉。…二:物。不應有任何薄的氧 射俜數所 為亂化物層與氧化物層具有相似的折 射係數,所以從氧化物爲 ^ ^ s到虱化物層的研磨過渡期在來自 於憤測器的訊號上是不會產生突然的改變。因b = …終點谓測方法為研磨_預定…干擾邊: 10 200408496 (interference (在本文中被泰 的厚度。假設 被適當的選取 掉時即被停止 然而,一 使是在相同基 移除的物質數 間及被去除的 在所想要的目 與使用波 偵測器比較起 測器具有較佳 去除的物質數 物層的研磨期 峰至波峰厚度 峰厚度△ D相 42的訊號上』 可能發生在接 除的物質數量 度變化相對小 相同的理 光源在旋轉塗 研磨及絕緣體 項潛在的問題為研磨率舍有稍微的波動,即 材上的研磨亦然。如果在辅助研磨步驟中被 篁可被減少的話則在不確定的研磨率下的時 物質厚度都可被減少,且研磨可精確地停止 標厚度。A hole 30 is formed on the top surface of the platform 16 and is aligned with a window 26 formed on the polishing pad 18. The window may be a solid transparent insert 44 which is fixed to the cover layer 22. A hole 46 may be formed through the backing layer 20 and aligned with the window 36. Further, at least a part of the hole 36 may be filled with a transparent solid member 31, such as a quartz block. The hole 30 and the window 36 are arranged so that they can see the substrate 14 held by the grinding head 12 during the rotation of the platform regardless of the moving position of the grinding head 12. An optical surveillance system is fixed under the top surface of the platform 16, and the optical surveillance system includes a light source 3 2 (eg, a laser, such as a red laser, a blue laser, or an infrared laser, Or a light emitting diode, such as a red light emitting diode, a blue light emitting diode, or an infrared light emitting diode) and a detector 42 (eg, an optical detector). For example, the 8 200408496 optical surveillance system can be located in a recess 17 on the platform 16 and can rotate with the platform. Alternatively, the optical surveillance system may be a stationary system located under the platform. The light source 32 transmits a light beam 34 through the hole 30 and the window 36 on the polishing pad 18 to strike the surface of the substrate (eg, a semiconductor substrate) at least while the window 36 is adjacent to the substrate 14. . The light reflected from the substrate forms a resulting beam 60 which is detected by the detector 42. An unillustrated computer receives the measured light intensity from the detector 42 and uses it to determine the end point of the grinding, such as by detecting a sudden change in the reflectivity of a substrate exposed on a new layer , By using the interferometer principle to calculate the thickness removed from the outer layer (for example, a transparent oxide layer), or by monitoring the signal of a predetermined end condition. The slurry applied to the polishing pad 18 during the grinding operation may form a layer 38 between the substrate 14 and the polishing pad 18. However, the interface between the window 36 and the polishing pad 18 is sealed so that the mud 38 does not leak out to the platform 16. The window 36 should have at least some of the following characteristics: chemical resistance to mud or other substances used in the grinding process; good optical clarity (eg, at least 25% light transmission in the wavelength range of the beam ); A low refractive index (such as less than 1.48); the refractive index is about the same as the refractive index of the mud; no diffusion; and directivity such as optics. The window can be a polymer material such as polyurethane or fluoropolymer. A low refractive index and high optical clarity, about the same as the refractive index of the mud, can reduce reflections from the air / window / water interface and improve the transmittance of light back and forth through the window, thereby improving the signal-to-noise ratio. Optics 9 200408496 The sharpness should be high enough to provide at least about 25% (eg, at least about 50%, at least about 80%, at least about 90%, at least about 95%) of the wavelength range of the beam used by the detector Light transmission. Typical wavelength ranges include the visible spectrum (eg, from about 400 nm to about 800 nm), the ultraviolet (u V) spectrum (eg, from about 300 nm to about 400 nm), and / or the infrared spectrum (eg, (From 800 nm to about 1550 nm). In some embodiments, the wavelength range may be within a specific portion of the visible spectrum, like a blue portion of visible light (eg, from about 400 nm to about 470 nm, from about 400 nm to about 415 nm, from about 400 nm to about 41 t ) nm, "for the substance" in the low wavelength range near blue and UV light (such as' less than about 4 1 5 nm) has high light transmittance (such as at least about 800 / 〇 , At least about 90%, at least about 95%) is desired. These low wavelengths are useful when performing optical measurements during shallow trench insulation using fixed grinding (FA) or highly selective mud (HSS). Use of light beams that can produce a wavelength between 400_4 1 5nm The light source is advantageous in grinding.-The active area of the STI device (from the outermost layer) has an oxide layer of about 1000-2000 Angstroms thick,-a gas layer,-a thin oxide layer (about 200 Angstroms) ), And finally, during the STI polishing process, the outermost oxide layer is removed from the active layer and stopped at the nitride layer. It is best to remove the nitrogen oxide layer that is less than 200 angstroms. … Two: matter. There should not be any thin oxygen emission. The chaotic material layer and the oxide layer have similar refractive index, so the grinding transition period from oxide to ^ s comes from speculation. There will be no sudden change in the signal of the device. Because b =… the end point measurement method is grinding_predetermined ... Interfering edge: 10 200408496 (interference (thickness of thickness in this article. It is assumed to be selected when it is properly selected) Stop, however, one is removed on the same basis The number of substances and the removed ones are compared with the desired target and the wave detector is used. The detector has a better removal of the number of substances. The grinding period peak to peak thickness of the material layer △ D phase 42 signal. Occurring when the quantity of the material removed is relatively small. The same problem with the same light source in the spin coating grinding and insulators is that the potential problem is that the grinding rate fluctuates slightly, that is, the grinding of the material is the same. If it can be reduced, the material thickness can be reduced at an uncertain grinding rate, and the grinding can accurately stop the target thickness.

fringe),然後研磨一額外百分比的干擾週期 f為”輔助”研磨步驟)。這應可研磨至所想要 該邊緣數量及該辅助研磨步驟的週期百分比 ’研磨應會在只有一小量的氮化物層被去除 長在紅光光譜範圍(如,約67〇nm)的終止點 來’ 一使用波長為400-41 5nm的終止點偵 的波峰至波峰的解析度(在干擾邊緣之間被 里)°詳言之,在一折射係數為1 · 4 6的氧化 間’ 400-41 5nm的波長可提供1 400埃的波 △ D,這與使用紅光的2400埃的波峰至波 反。因為藍(紫藍)光波長可在來自於偵測器 ί生更多的干擾邊緣,所以一干擾邊緣將更 近目標厚度,且在輔助研磨步驟期間會被移 就會愈少。此外,由於氧化物層之進來的厚 ’所以終止點偵測錯誤的可能就很小。 由,使用可產生 400-4 1 5nm波長的光數之 佈玻璃的研磨上,如硼磷旋轉玻璃(BPS G) 上的矽(SOI)研磨,是有利的。在 BPSG處fringe), and then grind an extra percentage of the interference cycle f (the "assistance" grind step). This should be able to grind to the desired number of edges and the percentage of the cycle of the auxiliary grind step. 'Grind should be removed at the end of only a small amount of the nitride layer and grow in the red spectral range (eg, about 67nm). Point to 'A peak-to-peak resolution using a 400-41 5nm termination point detection (between the edges of the interference) ° In detail, an oxidation chamber with a refractive index of 1 · 4 6' 400 A wavelength of -41 5nm can provide a wave ΔD of 1 400 Angstroms, which is in contrast to a peak to wave of 2400 Angstroms using red light. Because the wavelength of blue (purple blue) light can generate more interference edges from the detector, an interference edge will be closer to the target thickness and will be less moved during the auxiliary grinding step. In addition, due to the thickness of the oxide layer, the possibility of detecting the termination point is very small. Therefore, it is advantageous to use glass cloth polishing, such as silicon (SOI) polishing on boron-phosphorus rotating glass (BPS G), which can produce a light number of 400-4 1 5nm wavelength. At BPSG

11 200408496 理中,一旋轉塗佈玻璃被沉積在一氮化物層上,且該玻璃 然後被研磨掉且沒有移除掉太多的氮化物部分(如,小於 2 0 0埃)。在一 S ΟI處理中,一第一植入的及氧化的矽晶 圓結合至一第二矽晶圓上,且該第一矽基材被分割用以提 供一薄的被植入的矽層於該氧化物層之上。該外面的矽層 然後被研磨用以將矽表面平坦化且不會有太多的矽本身被 去除掉(如,小於 5 0埃)。因為藍色(紫藍色)波長的光在 來自該偵測器42的訊號上可產生更多的干擾邊緣,所以 一干擾邊緣將更可能發生在接近目樣厚度,且研磨可以更 精確地停止在目標厚度上。 因為本發明的窗口在400nm至410bm波長範圍内有 大於80%的透光率所以可以使用UV/藍光LED。相反地, 目前的窗口典型地在400nm至410bm波長範圍内的透光 率只有小於20%。 如果該窗口物質的折射係數低到夠接近泥漿的折射係 數的話,在窗口 /泥漿界面的反射即可被降低。該折射係 數可小於約 1.4 8 (如,小於約 1.4 5,小於約 1 · 4,小於約 1 .3 5,與水的折射係數相同)。在某些實施例中,該窗口 物質的折射係數可以是在泥漿的折射係數的約 〇 · 〇 7之内 (如,在約0.0 3之内,在約0 · 0 1之内)。在某些實施例中, 該窗口物質的折射係數是在該泥漿的折射係數的約 5 · 5 % 之内。使用此種窗口墊物質可提高真實訊號並降低背景訊 號,藉以改善光學強度測量的訊號對雜訊的比例。 該窗口物質亦可以是一極度的光學等方向性聚合物。 12 200408496 大多數的聚合物本質上都是非等方向性的。然而,一在低 應力下被模製的窗口物質可表現出更佳的光學等方向性。 一等方向性的物質可有助於保持詢問光束的極性。該窗口 物質可以比傳統上被用作為窗口物質的聚氨酯類更為等方 向性。 一親水物質可有助於確保永遠都有一層泥渡或或水介 於基材與窗口之間。該層泥漿或水的存在可防止窗口/空 器/晶圓界面的產生,該界面會造成嚴重的訊號扭曲。雖 然聚合物材質有厭水的傾向,但可藉由表面處理,如粗縫 化或餘刻,來將其由厭水變為親水。然而,對於某些應用 而言,厭水性的窗口是有用的。例如,如果一被研磨的基 材在一厭水層(多晶石夕’單晶石夕等等)的上方具有一親水層 (Si〇2,SisN4等等)的話,則該基材之排斥水的傾向將會 隨著厭水層被研磨掉而升高。此一轉變是可藉由金數來自 於偵測器的訊號強度來偵測到的。 該窗口應夠硬才不會被讓基材刮傷該窗口。一軟的物 質(像是硬度在蕭氏硬度A等級(Shore A)的物質)會有在 受到來自於基材的負荷下會彎折的傾向。該基材會深入到 該軟的窗口中且與較硬的研磨墊周邊相接觸。這會產生刮 痕及會造成窗口的屑片剝落。因此,該窗口應與研磨墊周 邊物質的硬度大致相同(或只稍微軟一點)。大體上,在蕭 氏硬度D40-95(如,40-80)範圍内的硬度都是適當的。 可被使用作為窗口的窗口物質包括矽酮,聚氨酯類及 鹵素化的聚合物(如,氟聚物)。氟聚物的例子包括聚氣三 13 20040849611 200408496 In the process, a spin-on glass is deposited on a nitride layer, and the glass is then ground away without removing too much of the nitride portion (eg, less than 200 angstroms). In a SOI process, a first implanted and oxidized silicon wafer is bonded to a second silicon wafer, and the first silicon substrate is divided to provide a thin implanted silicon layer. Over the oxide layer. The outer silicon layer is then polished to flatten the silicon surface without too much silicon itself being removed (eg, less than 50 Angstroms). Because light of blue (purple blue) wavelength can generate more interference edges on the signal from the detector 42, an interference edge will be more likely to occur near the thickness of the sample, and grinding can be stopped more accurately On the target thickness. Since the window of the present invention has a light transmittance of more than 80% in a wavelength range of 400 nm to 410 bm, a UV / blue LED can be used. In contrast, the current window typically has a light transmittance of less than 20% in the wavelength range of 400 nm to 410 bm. If the refractive index of the window material is low enough to be close to the refraction coefficient of the mud, the reflection at the window / mud interface can be reduced. The refractive index may be less than about 1.48 (e.g., less than about 1.45, less than about 1.4, less than about 1.3, the same refractive index as water). In some embodiments, the refractive index of the window material may be within about 0.007 of the refractive index of the mud (e.g., within about 0.03, within about 0.01). In some embodiments, the refractive index of the window material is within about 5.5% of the refractive index of the mud. The use of this window pad material can increase the true signal and reduce the background signal, thereby improving the signal-to-noise ratio of the optical intensity measurement. The window material may also be an extremely optically directional polymer. 12 200408496 Most polymers are non-isotropic in nature. However, a window material that is molded under low stress may exhibit better optical and other directivity. First-order directional substances can help maintain the polarity of the interrogation beam. The window material can be more isotropic than the polyurethanes traditionally used as window materials. A hydrophilic substance can help ensure that there is always a layer of mud or water between the substrate and the window. The presence of this layer of mud or water prevents the window / spacer / wafer interface from being created, which can cause severe signal distortion. Although the polymer material has a tendency to be water-repellent, it can be changed from water-repellent to hydrophilic by surface treatment such as rough stitching or engraving. For some applications, however, hydrophobic windows are useful. For example, if a ground substrate has a hydrophilic layer (Si02, SisN4, etc.) over a water-repellent layer (polycrystalline stone, single crystal stone, etc.), the substrate is repelled. The tendency to water will increase as the water-repellent layer is ground away. This change can be detected by the signal strength from the detector. The window should be hard enough not to be scratched by the substrate. A soft substance (such as a substance having a Shore A hardness) tends to bend under a load from a substrate. The substrate penetrates into the soft window and contacts the periphery of the harder abrasive pad. This can cause scratches and chipping of the window. Therefore, the window should be about the same hardness (or only slightly softer) than the material around the polishing pad. In general, hardnesses in the range of Shore hardness D40-95 (e.g., 40-80) are suitable. Window materials that can be used as windows include silicones, polyurethanes, and halogenated polymers (eg, fluoropolymers). Examples of fluoropolymers include PolyGas 13 200408496

氟乙烯(PCTFE),聚氟環氧基(pF 代丞(1^A)鼠化乙烯丙烯(FEP), t四氣乙稀(PTFE),聚十五殽辛美 齓辛基丙烯酸酯(折射係數為 1.3 3 9)’聚四氟乙烯(折射係數& 135〇),聚十一氟氧基 丙稀酸醋(折射係數為KW),聚九氟戊基丙稀酸自旨(折射 係數為1360),聚七氟丁基丙烯酸醋(折射係數為1 367), I二氟乙烯基乙酸酯(折射係數為丨3 7 5)。 一種具有大多數所想要^]f & 〜要的特性之市面上可購得的物質 為 Calthane ND 3200 聚氨醋(Cal p y 、 ”mer,Long Beach,Fluoroethylene (PCTFE), polyfluoroepoxy (pF substituted fluorene (1 ^ A) ratified ethylene propylene (FEP), t-gas ethylene (PTFE), polyfifteen octamethyl octyl acrylate (refraction Coefficient of 1.3 3 9) 'Polytetrafluoroethylene (refractive index & 135)), polyundecfluorooxyacrylic acid (refractive index is KW), polynonafluoropentyl acrylic acid (refractive index) 1360), polyheptafluorobutyl acrylate (refractive index 1 367), I difluorovinyl acetate (refractive index 丨 3 7 5). One with most desired ^] f & ~ A commercially available substance with important characteristics is Calthane ND 3200 (Cal py, "mer, Long Beach,

Calif0rnia)。該物質為兩部分清晰的非琥玫尿烷彈性體, 且在3 50nm的波長及更長的波長(在可見光光譜外的波 長,如700nm)下其具有至少8〇%的透光性(對於一 15〇米 爾(mil)的厚板而言該物質具有約148的折射係數。在 不侷限於任何特定的理論下,一般咸認(與目前的聚氨酯 窗口物質相反之)此聚氨酯物質的高透光性是因為使用了 無内部缺陷的聚氨酯。雖然目前用來作為窗口的聚氨酯類 沒有添加物,但卻具有内部缺陷,像是氣泡,氣隙,裂痕, 或微區域(如,小區域的不同結晶結構或方向),這些都會 使得光線漫射或散射。藉由讓該聚氨酯類不具有内部區 陷,可獲得一高度的光學清晰度。 另一種具有大多數所想要的特性之市面上可購得的物 質為 Conoptic DM-2070 聚氨 g旨(Cytec Olean,Olean,NewCalif0rnia). This substance is a two-part, clear non-succinic urethane elastomer, and has a light transmittance of at least 80% at a wavelength of 3 50nm and longer (wavelength outside the visible light spectrum, such as 700nm) (for For a 15 mil thick plate, the material has a refractive index of about 148. Without being limited to any particular theory, it is generally recognized (as opposed to current polyurethane window materials) that the polyurethane material is highly transparent. The lightness is due to the use of polyurethane without internal defects. Although the polyurethanes currently used as windows have no additives, they have internal defects such as bubbles, air gaps, cracks, or micro-regions (such as the difference in small regions). Crystalline structure or direction), these will make the light diffuse or scatter. By making the polyurethanes have no internal depression, a high degree of optical clarity can be obtained. Another commercially available product with most of the desired characteristics is available on the market. The purchased material was Conoptic DM-2070 Polyurethane (Cytec Olean, Olean, New

York)。該物質在3 5 0nm的波長及更長的波長(在可見光光 譜外的波長,如700nm)下其具有至少80%的透光性(對於 一 150米爾(mil)的厚板而言),且具有約45至57蕭氏硬 14 200408496 度D的硬度(比”Calthane ND3200”稍為軟一些)。 市面上可購得之窗口物質的例子尚包括FEP X 630 1, FEP X 6303,FEP X 6307,PFA 6502N,PFA 6505 N,PFA 6510 N 及 PFA 6515 N(所有這些都可從 Dyneon LLC, Oakdale, MN購得),PCTFE聚合物的Neoflon家族(可從 Daikin America,Inc.,Orangeburg,NJ 購得)及 PTFE 聚合 物的 Telfon 家族(可從 E.I. du Pont de Nemours and Company, Wilmington,DE 購得)。厭水性物質的 PCTFE 在300nm的波長及更長的波長(在可見光光譜外的波長, 如700nm)下其具有至少80%的透光性(對於一 32米爾厚 的板子而言),約1 · 3 3的折射係數,及具有約7 5至8 0蕭 氏硬度D的硬度是可能的。 參照第2圖,在一實施例中,一抗反射塗層48被形 成在窗口 36的底面上。此一抗反射塗層可將介於孔洞46 與***物44之間的界面的反射降至零,藉以加強來自於 該基材的訊號。 參照第3圖,在另一實施例中,窗口 3 6的一頂面5 0 相對於覆蓋層2 2的研磨表面2 4稍微下陷。該凹陷相對於 包圍墊的研磨表面是非常小的且小於5米爾,如約1 -2米 爾。藉由從該窗口稍微下陷,窗口表面的刮痕及磨損皆可 被降低,藉以改進在整個研磨墊壽命期間的光學訊號的一 致性。 參照第4A及4B圖,該透明***件44的底面54的 外緣部分5 2在***件44被固定到研磨墊1 8上之前即被 15 200408496York). The substance has a light transmission of at least 80% at a wavelength of 350 nm and longer (wavelength outside the visible light spectrum, such as 700 nm) (for a 150 mil thick plate), and It has a hardness of about 45 to 57 Shaw Hard 14 200408496 degrees D (slightly softer than "Calthane ND3200"). Examples of commercially available window materials include FEP X 630 1, FEP X 6303, FEP X 6307, PFA 6502N, PFA 6505 N, PFA 6510 N, and PFA 6515 N (all of which are available from Dyneon LLC, Oakdale, Available from MN), Neoflon family of PCTFE polymers (available from Daikin America, Inc., Orangeburg, NJ) and Telfon family of PTFE polymers (available from EI du Pont de Nemours and Company, Wilmington, DE) . The PCTFE of the water-repellent substance has a light transmittance of at least 80% at a wavelength of 300 nm and longer (wavelength outside the visible light spectrum, such as 700 nm) (for a 32-mil thick board), about 1 · A refractive index of 3 3 and a hardness having a Shore hardness D of about 75 to 80 are possible. Referring to Fig. 2, in one embodiment, an anti-reflection coating 48 is formed on the bottom surface of the window 36. This anti-reflection coating reduces the reflection at the interface between the hole 46 and the insert 44 to zero, thereby enhancing the signal from the substrate. Referring to FIG. 3, in another embodiment, a top surface 50 of the window 36 is slightly sunken with respect to the abrasive surface 24 of the cover layer 22. The depression is very small and less than 5 mils relative to the abrasive surface of the surrounding pad, such as about 1-2 mils. By sinking slightly from the window, scratches and abrasion on the surface of the window can be reduced, thereby improving the uniformity of the optical signal throughout the life of the polishing pad. Referring to FIGS. 4A and 4B, the outer edge portion 5 2 of the bottom surface 54 of the transparent insert 44 is covered by the 2004 before the insert 44 is fixed to the polishing pad 18.

墊的結合。此外, 52包圍的中心部分The combination of pads. Also, 52 surrounds the central part

用以提供一強力結合於覆蓋層22與***件44的特定材料 56是一平滑的表 主蜂。該邊緣部分 藉由將(與背襯層 之間 第5及6圖顯示具有一窗口 14〇的研磨墊1〇〇的另一 實施例’該窗口是由具有相對高的表面能量的物質所製 成,如至少約 4 2 m J / m2 (如,至少約 4 4 m J / m2,至少約 45mJ/m2,至少約46mJ/m2)的表面能量。一物質的表面能 董係指用A S T M D 5 7 2 5 - 9 9所測得的能量。通常,窗口 1 4 〇 是由上述的窗口物質中的一種物質所製成。 研磨墊100包括一背襯層110其具有一上表面112, 及一覆蓋層120其具有一研磨表面122。一在背襯層11〇 上的開口 1 14被設成與覆蓋層120上的一開口 124對齊, 使得層11 0的突出部分1 1 6延伸在開口 1 2 4的一部分的底 下。背襯層1 1 0及覆蓋層1 2 0係利用一黏著層1 3 0來將它 們保持在一起,該黏著層沿著背襯層1 1 0的上表面1 1 2延 伸。一實心物質1 40的窗口被設置在開口 11 4内且被黏著 層160保持在定位上。層160被附著至黏著層150上,該 黏著層接著黏著至層13〇的上表面132上。雖然窗口 14〇 的側壁被示為與覆蓋層1 20齊平,但在某些實施例中,在 窗口 140的側壁與覆蓋層1 20的側壁之間有間隙。此外, 16 200408496 雖然窗口 140的上表面被示為與覆蓋層120的研磨表面 1 22齊平,但在某些實施例中,該上表面可下陷至研磨表 面 122之下。 大體上,背襯層110,覆蓋層120及黏著層130可由 適合用在CMP處理中的任何材質製成。例如,層11 〇,1 20 及130可用與市面上可獲得的研磨墊,像是IC-1000研磨The specific material 56 used to provide a strong bond between the cover layer 22 and the insert 44 is a smooth watch master. The edge portion is shown in FIGS. 5 and 6 between the backing layer and the backing layer. Another embodiment of the polishing pad 100 having a window 14 is shown. The window is made of a substance having a relatively high surface energy. Surface energy, such as at least about 4 2 m J / m2 (eg, at least about 4 4 m J / m2, at least about 45 mJ / m2, at least about 46 mJ / m2). The surface energy of a substance refers to the use of ASTMD 5 The measured energy of 7 2 5-9 9. Generally, the window 1 40 is made of one of the aforementioned window materials. The polishing pad 100 includes a backing layer 110 having an upper surface 112, and The cover layer 120 has an abrasive surface 122. An opening 1 14 on the backing layer 110 is provided to align with an opening 124 on the cover layer 120 so that the protruding portion 1 1 6 of the layer 110 extends over the opening 1 Underneath a part of 2 4. The backing layer 1 1 0 and the cover layer 1 2 0 use an adhesive layer 1 3 0 to hold them together, and the adhesive layer is along the upper surface 1 1 of the backing layer 1 1 0 2 extended. A window of a solid material 1 40 is placed in the opening 11 4 and held in position by the adhesive layer 160. The layer 160 is attached Onto the adhesive layer 150, which then adheres to the upper surface 132 of the layer 130. Although the side wall of the window 140 is shown flush with the cover layer 120, in some embodiments, the window 140 There is a gap between the sidewall and the sidewall of the cover layer 120. In addition, 16 200408496 Although the upper surface of the window 140 is shown flush with the abrasive surface 1 22 of the cover layer 120, in some embodiments, the upper surface may be Sagging below the abrasive surface 122. In general, the backing layer 110, the cover layer 120, and the adhesive layer 130 can be made of any material suitable for use in a CMP process. For example, the layers 110, 120, and 130 are commercially available Available polishing pads like IC-1000 polishing

I 墊或1C-1010研磨墊(來自 Rodel,Phoenix,AZ),中相對 應的層所用的材質相同的材質製成。在某些實施例中,背 襯層110是由一可壓縮的層所製成,像是一 Sub a-IV層(來 自Rodel,Phoenix,AZ)。在某些實施例中,黏著層130是 由一雙塗層薄膜膠帶製成。市面上可用的雙塗層薄膜膠帶 可從3M公司(St· Paul,MN)購得(如,雙塗層薄膜膠帶442 家族的一員)。形成層130的黏著膠帶亦可從Sc ap a North America (Windsor,CT)購得。 在某些實施例中,一物質的表面可被改良(如,藉由 電暈放電處理’火談處理及氟氣體處理)可提高該物質的 表面能量。大體上’一具有改良過的表面之物質的表面能 量是落在上文提及的範圍之内。 大體上,黏著層1 5 〇是由一種可良好地黏附到層i 3 〇 及1 6 0上的物質所製成。在某些實施例中,黏著層1 5 〇是 由一或多種聚合物黏劑所製成。可形成層15〇的聚合物黏 劑的例子包括丙烯酸酯聚合物,包含橡膠硬化的丙烯酸酯 聚合物及兩黏性丙烯醆酯聚合物。丙烯酸酯聚合物的例子 包括氰基丙烯酸酯聚合物,包含橡膠硬化的氰基丙烯酸酯 17 200408496 聚合物及高黏性丙燐酸酯聚合物。可製成層丨50之市面上 可購得的黏劑聚合物的例子包括 L〇ctite⑧401黏劑, Loctite⑧ 406 黏劑,Loctite® 4 1 0 黏劑及 Loctite® 4 1 1 黏劑 (Loctite Corporation,Rocky Hill,CT) 〇 大體上,黏著層1 6 0是由一種可良好地黏附到層1 4 ο 及1 5 0上的物質所製成。在不希望被理論所侷限下,一般 咸認使用具有這些黏著特性的物質來製成層1 6 0可降低窗 口 140無法黏著到研磨墊1〇〇上的可能性。這在窗口 140 是由具有相對低的表面能量的物質所製成時是特別有用的 (如,當窗口 140是由某些鹵素化的聚合物,如 PTFE)。 一般咸認使用具有這些黏著特性的物質來製成層1 6 0可降 低液體(如,泥漿或水)會從窗口 140的表面142漏到窗口 140,層160,層150及/或層140底下的可能性。這在液 體滲漏會干擾到光學測量(如在窗口 140,層160,層150 及/或層1 4 0底下會形成濕氣)的情形中是特別有利的。 在某些實施例中,黏著層1 6 0是由一或多種聚合物黏 劑製成的。可用來製成層1 6 0的聚合物黏劑的例子包括市 面上可用來製成層1 60的黏性聚合物的例子包括Loctite® 引發劑(primer)黏劑(從 Loctite Corporation,Rocky Hill, CT 購得),像是 Loctite® 7 70 引發劑黏劑,Loctite® 770 1 引發劑黏劑,Loctite® 793引發劑黏劑,Loctite® 794引發 劑黏劑及Loctite⑧795 1引發劑黏劑。在實施例中,層1 60 是由層1 5 0的引發劑所製成(如,丙烯酸酯聚合物的引發 劑,一氰基丙烯酸酯聚合物的引發劑) 18 200408496 雖然某些實施例已被說明,但本發明並不侷限於此等 實施例。 舉例而言,當由上方來觀看該墊子時,窗口 36的形 狀可如所需地加以選擇(如,矩形插塞,一圓形插塞,一 卵形插塞)。 另一個例子為,當沿著剖面來觀看該墊子時(如,第 1圖所示的視圖),窗口 3 6的形狀可如所需地加以選擇 (如,矩形,錐形,部分矩形及部分錐形)。 一額外的例子為,在某些實施例中,窗口 3 6.是部分 被背襯層20所支撐的。 另一個例子為,在某些實施例中,窗口 1 4 0是由具有 相對低的表面能量的物質所製成,如約 4 0 m J / m2 (如,約 37mJ/m2或更小,約 35mJ/ m2或更小,約 33mJ/ m2或更 小,約31mJ/ m2或更小,約25mJ/ m2或更小,約20mJ/ m2 或更小,約1 8mJ/m2)。 進一步的例子為,在覆蓋層1 1 0上的開口 1 1 4的一部 分可被填入一透明的實心件 3 1,如一石英塊(如,在窗口 140 内)。 另一個例子為,研磨墊可在不具有層150下被製成。 另一進一步的例子為,該研磨塾可在不具有層160下 被製成。 另一個例子為,一額外的黏劑層(如,由上文提及之 層130的材質製成者)可存在背襯層110的底側上。典型 地,此一額外的層不會延伸於層110上的開口 Π4之上。 19 200408496 一額外的例子為,該研磨頭及半導體基材可在該CMP 設備的操作期間平移。大體上,光源及光偵測器被設置成 它們可在平台的部分轉動期間看到該基材,無論該頭的平 移位置為何。 另一個例子為,在該 CMP設備中的光學監視系統可 以是一位在該平台底下的一固定不動的系統。 一額外的例子為,一研磨塾可包含一覆蓋層且沒有背 襯層,或一研磨墊可以是一固定式的研磨墊其研磨顆粒是 被保持在一固持媒介中。 其它的實施例是在申請專利範圍中。 【圖式簡單說明】 第1圖為一化學機械研磨系統的研磨站的示意剖面側 視圖。 第2圖為一研磨墊的示意剖面側視圖,該研磨墊具有 一抗反射塗層在該窗口的底面上。 第3圖為一研磨墊的示意剖面側視圖,其中該窗口是 從研磨表面下陷的。 第 4A圖為一具有粗糙的底面之窗口的示意剖面側視 圖。 第4B圖為一具有粗縫的底面之窗口的示意底視圖。 第 5圖為據有一窗口的研磨墊的實施例的示意頂視 圖。 第6圖為第5圖的研磨墊的剖面圖。 20 200408496 在各圖中相圖的標號代表相同的元件。 【元件代表符號簡單說明】 10 CMP設備 12 研磨頭 14 半導體基材 16 平台 18 研磨墊 20 背襯層 22 覆蓋層 30 孔 32 光源 3 1 透明實心件 36 窗口 42 偵測器 44 ***件 46 孔洞 34 光束 17 凹陷 60 結果光束 38 泥漿層 48 抗反射塗層 24 研磨表面 50 上表面 52 外緣部分 54 底面 56 中心部分 100 研磨蟄 140 窗口 110 背襯層 112 上表面 120 覆蓋層 122 研磨表面 124 開口 116 突出部分 130 黏著層 150 黏著層 132 上表面 160 黏著層 142 表面 21I pad or 1C-1010 polishing pad (from Rodel, Phoenix, AZ), the corresponding layer in the middle is made of the same material. In some embodiments, the backing layer 110 is made of a compressible layer, such as a Sub a-IV layer (from Rodel, Phoenix, AZ). In some embodiments, the adhesive layer 130 is made of a double-coated film tape. Commercially available double-coated film tapes are commercially available from 3M Company (St. Paul, MN) (eg, a member of the 442 family of double-coated film tapes). The adhesive tape forming the layer 130 is also commercially available from Scapa North America (Windsor, CT). In some embodiments, the surface of a substance can be modified (e.g., by corona discharge treatment 'flame treatment and fluorine gas treatment) to increase the surface energy of the substance. Generally, the surface energy of a substance having an improved surface falls within the above-mentioned range. In general, the adhesive layer 150 is made of a substance that can well adhere to the layers i 3 0 and 160. In some embodiments, the adhesive layer 150 is made of one or more polymer adhesives. Examples of the polymer adhesive capable of forming the layer 150 include an acrylate polymer, a rubber-hardened acrylate polymer, and a two-viscosity acrylic polymer. Examples of acrylate polymers include cyanoacrylate polymers, rubber-hardened cyanoacrylate 17 200408496 polymers, and high-viscosity propionate polymers. Examples of commercially available adhesive polymers that can be made into layers include Loctite® 401 adhesive, Loctite® 406 adhesive, Loctite® 4 1 0 adhesive, and Loctite® 4 1 1 adhesive (Loctite Corporation, Rocky Hill, CT) 〇 Generally, the adhesive layer 160 is made of a substance that can adhere well to the layers 14 and 150. Without wishing to be limited by theory, it is generally recognized that the use of substances with these adhesive properties to make the layer 160 can reduce the possibility that the window 140 cannot adhere to the polishing pad 100. This is particularly useful when the window 140 is made of a substance having a relatively low surface energy (for example, when the window 140 is made of some halogenated polymer, such as PTFE). It is generally recognized that the use of substances with these adhesive properties to make the layer 160 can reduce the leakage of liquid (such as mud or water) from the surface 142 of the window 140 to the window 140, layer 160, layer 150, and / or under the layer 140 Possibility. This is particularly advantageous in situations where liquid leakage can interfere with optical measurements (such as the formation of moisture under window 140, layer 160, layer 150, and / or layer 140). In some embodiments, the adhesive layer 160 is made of one or more polymer adhesives. Examples of polymer adhesives that can be used to make layer 160 include commercially available adhesive polymers that can be used to make layer 1 60. Examples include Loctite® initiator adhesive (from Loctite Corporation, Rocky Hill, Available from CT), such as Loctite® 7 70 initiator adhesive, Loctite® 770 1 initiator adhesive, Loctite® 793 initiator adhesive, Loctite® 794 initiator adhesive, and Loctite® 795 1 initiator adhesive. In embodiments, layer 1 60 is made from an initiator of layer 150 (eg, an initiator for an acrylate polymer, an initiator for a monocyanoacrylate polymer) 18 200408496 although some embodiments have It is illustrated, but the present invention is not limited to these examples. For example, when viewing the mat from above, the shape of the window 36 can be selected as desired (e.g., rectangular plug, a circular plug, an oval plug). As another example, when viewing the mat along a section (eg, the view shown in Figure 1), the shape of the window 36 can be selected as desired (eg, rectangular, tapered, partially rectangular, and partially Cone). An additional example is that, in some embodiments, the window 36 is partially supported by the backing layer 20. As another example, in some embodiments, the window 140 is made of a substance having a relatively low surface energy, such as about 40 m J / m2 (eg, about 37 mJ / m2 or less, about 35mJ / m2 or less, about 33mJ / m2 or less, about 31mJ / m2 or less, about 25mJ / m2 or less, about 20mJ / m2 or less, and about 18mJ / m2). A further example is that a part of the opening 1 1 4 in the cover layer 110 can be filled with a transparent solid piece 31, such as a quartz block (eg, in the window 140). As another example, the polishing pad can be made without the layer 150. As a further example, the abrasive pad can be made without the layer 160. As another example, an additional adhesive layer (e.g., made from the material of layer 130 mentioned above) may be present on the bottom side of the backing layer 110. Typically, this additional layer does not extend above the opening Π4 on the layer 110. 19 200408496 An additional example is that the abrasive head and semiconductor substrate can be translated during operation of the CMP equipment. In general, the light source and light detector are arranged such that they can see the substrate during a partial rotation of the platform, regardless of the translation position of the head. As another example, the optical monitoring system in the CMP equipment can be a stationary system under the platform. An additional example is that a polishing pad may include a cover layer without a backing layer, or a polishing pad may be a fixed polishing pad whose abrasive particles are held in a holding medium. Other embodiments are within the scope of patent applications. [Brief description of the drawings] Fig. 1 is a schematic sectional side view of a polishing station of a chemical mechanical polishing system. Figure 2 is a schematic cross-sectional side view of a polishing pad having an anti-reflective coating on the bottom surface of the window. Fig. 3 is a schematic cross-sectional side view of a polishing pad in which the window is sunken from the polishing surface. Figure 4A is a schematic cross-sectional side view of a window with a rough bottom surface. FIG. 4B is a schematic bottom view of a window having a rough bottom surface. Figure 5 is a schematic top view of an embodiment of a polishing pad with a window. Fig. 6 is a sectional view of the polishing pad of Fig. 5. 20 200408496 The numbers in the phase diagrams in the figures represent the same elements. [Simple description of component representative symbols] 10 CMP equipment 12 Polishing head 14 Semiconductor substrate 16 Platform 18 Polishing pad 20 Backing layer 22 Cover layer 30 Hole 32 Light source 3 1 Transparent solid piece 36 Window 42 Detector 44 Insertion piece 46 Hole 34 Light beam 17 Depression 60 Result beam 38 Mud layer 48 Anti-reflective coating 24 Polished surface 50 Upper surface 52 Outer edge portion 54 Bottom surface 56 Center portion 100 Grinding 蛰 140 Window 110 Backing layer 112 Upper surface 120 Cover layer 122 Polished surface 124 Opening 116 Projection 130 Adhesive layer 150 Adhesive layer 132 Upper surface 160 Adhesive layer 142 Surface 21

Claims (1)

200408496 拾、攀讀#利範圍 1. 一種研磨基材的方法,其至少包含: 將一具有透明部分的研磨表面與一基材相接觸,該 需要研磨的基材係在包括一淺溝渠隔離(STI)製程、一 旋轉塗佈玻璃製程及一絕緣體上的矽(SOI)製程在内之 一製程中進行研磨處理; 使該研磨表面與該基材之間有相對運動; 將一波長介於300 nm至5 OOnm之間的光束導引穿 過該研磨表面的透明部分;及 偵測來自於該基材的反射光束,用以決定出一研磨 終點。 2. 如申請專利範圍第1項所述之方法,其中該光束主要 係由藍光組成。 3. 如申請專利範圍第2項所述之方法,其中該光束主要 係由藍(紫藍)光組成。 4. 如申請專利範圍第1項所述之方法,其中該光束具有 約4 00 nm的波長。 5. 如申請專利範圍第4項所述之方法,其中該波長介於 400 nm 至 415nm 之間。 22 200408496 6. 如申請專利範圍第5項所述之方法,其中該波長約為 405 nm 〇 7. 如申請專利範圍第1項所述之方法,其中該光束具有 約47 0 nm的波長。 8. 如申請專利範圍第1項所述之方法,其中該基材包括 一作用區,在該區内一最外面的氧化物層具有一介於 1000埃至2000埃的進入(incoming)厚度。 9. 如申請專利範圍第1項所述之方法,其中該研磨處理 是淺溝渠隔離(STI)製程中的一個步驟。 10. 如申請專利範圍第1項所述之方法,其中該研磨處理 是旋轉塗佈玻璃製程中的一個步驟。 11. 如申請專利範圍第1項所述之方法,其中該研磨處理 是在絕緣體上的矽(SOI)製程中的一個步驟。 12. —種研磨塾,其至少包含: 一具有一開口的背襯層; 一研磨層,其具有一與在背襯層上的開口對齊之開 23 200408496 π ; 一第一材質製成的實心窗口 ,其位在研磨層的開口 内; 一介於該背襯層與實心窗口之間的第一黏著物質 層;及 一介於該背襯層與實心窗口之間的第二黏著物質 層,該第二黏著物質不同於第一黏著物質。 1 3 ·如申請專利範圍第1 2項所述之研磨墊,其更包含一 第三黏著物質層介於該第一黏著物質層與該第二黏著 物質層之間。 14.如申請專利範圍第1 2項所述之研磨墊,其中該第一 黏著物質包含一聚合物。 1 5 ·如申請專利範圍第1 2項所述之研磨墊,其中該第一 黏著物質包含一從丙烯酸酯聚合物、氰基丙烯酸酯聚 合物、及多元烯烴聚合物所構成的組群中選取的物 1 6.如申請專利範圍第1 2項所述之研磨墊,其中該第一 黏著物質包含一雙塗佈的薄膜膠帶。 24 200408496 1 7 ·如申請專利範圍第1 2項所述之研磨墊,其中該第一 黏著物質層及該第二黏著物質層可以相鄰,該第一黏 著物質層包含丙烯酸酯聚合物,且該第二黏著物質層 包含第一物質的引發劑(primer)。 1 8 ·如申請專利範圍第1 2項所述之研磨墊,其中該背襯 層的一部分可延伸於該研磨層的開口底下,該第一黏 著物質層可延伸於該部分的背襯層之上。 1 9.如申請專利範圍第1 2項所述之研磨墊,其中該第一 黏著物質層包括一多元烯烴聚合物且該第二黏著物質 層可包括一丙烯酸醋聚合物。 20. 如申請專利範圍第1 2項所述之研磨墊,其中該第一 物質包含氟化聚合物。 21. —種建構一研磨墊的方法,其至少包含: 將範圍大致相同的第一及第二黏著物質層***到一 研磨墊上的一開口中;及 將一實心物質的窗口附著到該第一黏著物質層的一 表面上。 22. —種建構一研磨墊的方法,其至少包含: 25 200408496 將一透 暈放電處 選取;及 將該物 具有一研 明物件的表面加以改良,改良的方法是由電 理、火燄處理及氟氣體處理所構成的組群中 件固定在一研磨層上的一開口中,該研磨層 磨表面。 26200408496 取 、 攀 读 # 利 范围 1. A method for grinding a substrate, comprising at least: contacting a grinding surface having a transparent portion with a substrate, the substrate to be ground is isolated including a shallow trench ( STI) process, a spin-on-glass process, and a silicon-on-insulator (SOI) process to perform the grinding process, including a relative movement between the grinding surface and the substrate; a wavelength between 300 A light beam between nm and 500 nm is guided through a transparent portion of the grinding surface; and a reflected light beam from the substrate is detected to determine a grinding end point. 2. The method as described in item 1 of the scope of patent application, wherein the light beam is mainly composed of blue light. 3. The method as described in item 2 of the scope of patent application, wherein the light beam is mainly composed of blue (purple blue) light. 4. The method according to item 1 of the patent application range, wherein the light beam has a wavelength of about 400 nm. 5. The method according to item 4 of the patent application, wherein the wavelength is between 400 nm and 415 nm. 22 200408496 6. The method according to item 5 of the patent application, wherein the wavelength is about 405 nm. 7. The method according to item 1 of the patent application, wherein the light beam has a wavelength of about 470 nm. 8. The method according to item 1 of the patent application scope, wherein the substrate includes an active region, and an outermost oxide layer in the region has an incoming thickness between 1000 angstroms and 2000 angstroms. 9. The method according to item 1 of the patent application scope, wherein the polishing process is a step in a shallow trench isolation (STI) process. 10. The method according to item 1 of the patent application scope, wherein the grinding process is a step in a spin-on-glass manufacturing process. 11. The method according to item 1 of the patent application scope, wherein the polishing process is a step in a silicon-on-insulator (SOI) process. 12. A grinding mill comprising at least: a backing layer having an opening; a grinding layer having an opening aligned with the opening in the backing layer 23 200408496 π; a solid made of a first material A window located in the opening of the abrasive layer; a first adhesive substance layer between the backing layer and the solid window; and a second adhesive substance layer between the backing layer and the solid window, the first The second adhesive substance is different from the first adhesive substance. 1 3. The polishing pad according to item 12 of the patent application scope, further comprising a third adhesive substance layer interposed between the first adhesive substance layer and the second adhesive substance layer. 14. The polishing pad according to item 12 of the application, wherein the first adhesive substance comprises a polymer. 1 5 · The polishing pad according to item 12 of the scope of the patent application, wherein the first adhesive substance comprises a group selected from the group consisting of an acrylate polymer, a cyanoacrylate polymer, and a polyolefin polymer. 6. The polishing pad according to item 12 of the scope of patent application, wherein the first adhesive substance comprises a double-coated film tape. 24 200408496 1 7 · The polishing pad according to item 12 of the scope of patent application, wherein the first adhesive substance layer and the second adhesive substance layer may be adjacent to each other, the first adhesive substance layer includes an acrylate polymer, and The second adhesive substance layer contains a primer of the first substance. 1 8 · The polishing pad according to item 12 of the scope of patent application, wherein a part of the backing layer can extend under the opening of the polishing layer, and the first adhesive substance layer can extend to the backing layer of the part. on. 19. The polishing pad according to item 12 of the scope of the patent application, wherein the first adhesive substance layer includes a polyolefin polymer and the second adhesive substance layer may include an acrylic polymer. 20. The polishing pad according to item 12 of the patent application scope, wherein the first substance comprises a fluorinated polymer. 21. A method of constructing a polishing pad, comprising at least: inserting first and second adhesive substance layers having substantially the same range into an opening on a polishing pad; and attaching a window of a solid substance to the first Adhesive substance layer on one surface. 22. —A method for constructing a polishing pad, which includes at least: 25 200408496 selecting a halo discharge location; and improving the surface of the object with a proven object, the improved method is by electrical, flame treatment and The group consisting of fluorine gas treatment is fixed in an opening on an abrasive layer, and the abrasive layer grinds the surface. 26
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Cited By (5)

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Publication number Priority date Publication date Assignee Title
CN102554765A (en) * 2010-09-29 2012-07-11 罗门哈斯电子材料Cmp控股股份有限公司 Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith
TWI548482B (en) * 2009-04-30 2016-09-11 應用材料股份有限公司 Method of making and apparatus having windowless polishing pad and protected fiber
TWI665724B (en) * 2018-07-10 2019-07-11 中國砂輪企業股份有限公司 Polishing tool
TWI679084B (en) * 2017-08-07 2019-12-11 南韓商Skc股份有限公司 Polishing pad and process for preparing polishing pad
TWI698306B (en) * 2017-10-16 2020-07-11 南韓商Skc股份有限公司 Leakage-proof polishing pad and process for preparing the same

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI548482B (en) * 2009-04-30 2016-09-11 應用材料股份有限公司 Method of making and apparatus having windowless polishing pad and protected fiber
CN102554765A (en) * 2010-09-29 2012-07-11 罗门哈斯电子材料Cmp控股股份有限公司 Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith
CN102554765B (en) * 2010-09-29 2015-07-08 罗门哈斯电子材料Cmp控股股份有限公司 Chemical mechanical polishing pad with light stable polymeric endpoint detection window and method of polishing therewith
TWI679084B (en) * 2017-08-07 2019-12-11 南韓商Skc股份有限公司 Polishing pad and process for preparing polishing pad
TWI698306B (en) * 2017-10-16 2020-07-11 南韓商Skc股份有限公司 Leakage-proof polishing pad and process for preparing the same
US11267098B2 (en) 2017-10-16 2022-03-08 Skc Solmics Co., Ltd. Leakage-proof polishing pad and process for preparing the same
TWI665724B (en) * 2018-07-10 2019-07-11 中國砂輪企業股份有限公司 Polishing tool

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