TW200404174A - Micro actuator, micro actuator device, optical switch and optical switch array - Google Patents

Abstract

A moveable plate 21 is fixed on a substrate 11 via flexible parts 27a and 27b, and capable of moved up and down with respect to the substrate. The substrate 11 is also used as a fixing electrode. The moveable plate 11 includes: second electrodes 23a and 23b capable of generating static electricity between the electrodes and the substrate 11 via the voltage between the electrodes and the substrate 11; and a current path 25 arranged in the magnetic field to generate Lorenz force by applying a current. A reflective mirror 12 to enter and drop out the optical path is arranged in a moveable plate 21. Accordingly, it is able to increase the moveable range of the moveable part and reduce the consumed power without applying high voltage and without influencing miniaturization.

Description

200404174 玖、發明說明： 【發明所屬之技術領域】 本發明係有關微致動器、微致動器裝置、光開關及 開關陣列。 【習知技術】 隨著微機技術之進展，在各領域中，致動器之重要杜 曰漸提高。作為使用微致動器領域之一例，例如，有在光 通訊等中用來開關光程之光開關。作為此種光開關之例， 例如，有日本特開平2001—42233號公報所揭示之光開關。 叙而曰，彳政致動器具有固定部、與能以既定之力移 動的可動彳’用前述既定之力，以使保持在既定位置。至 於白知之微致動器，大多使用靜電力來作為前述既定之力 。例如，日本特開平2001-42233號公報所揭示之光開關中 所抓用之用來使微反射鏡移動之微致動器，係藉由靜電力 盥使可動部移動到上方位置（微反射鏡反射入射光之位置） 與下方位置（微反射鏡使入射光直接通過入射光之位置）， 並保持在該位置。 —利用這種靜電力之微致動器，係將第1電極部配置在 固疋部’ W第2電極部配置在可動部，在第！及第2電極 部間：：電壓，以在第1及第2電極部間產生靜電力。 ^ &述使用靜電力之習知微致動器，由於係用靜 “力使可動部移動’用靜電力保持在既定之位置，故不易 擴大可動部之可動範圍。 作用於平行平板之電極間的靜電力F1，若使用介電常 200404174 數e、電位差V、電極間距離d、電極面積s的話，則如下 述之（1)式所示。 F1 = ε X V2 X S/ (2d2) …（1) 由（1)式可知，右黾極間矩離d變大的話，靜電力ρ 1 與其平方成反比急遽地變小。因此，若是前述習知之微致 動器，當電極間距離d成為某一距離以上時，即不易使可 動部移動，不易擴大可動部之可動範圍。又，若對大的電 極間距離d，想、得到充分之靜冑力F1❿加大電位差（電極 間之電壓）V的話，則在絕緣耐力之點會產生問題，或必須 要有高電壓產生部。又’若對大的電極間距離d，想得到 充刀之靜電力F1而加大電極面積S的話，則尺寸變大，會 影響微致動器小型化之本來宗旨。 " 因此，本發明人研究之結果，在微致動器中，構思使 用羅倫茲力來取代靜電力。 設磁通密度為Β(τ)，電線之長度為L(m)，電流為 KA) ’則羅倫茲力F2(N)能用下述之（2)式來表示。 F2 = IxBxL ".(2) 在（2)式中，因沒有規定電源位置之項目，故在一定之 磁通密度中，即使電線之位置改變，所產生之羅倫兹力&F2 也不變化。 微致動器中，在可動部設置相當於前述電線之電流路 控，右對该電流路徑施加磁場，使電流流於前述電流路押 的活，即此使羅倫茲力作用於可動部。即使可動部之可動 範圍較4知廣，對該範圍事先施加大致一樣之磁場， 200404174 藉由磁鐵等之使用，是非 可動範圍廣，亦不致〜?於 、。因此，即使可動部之 力作用於可動部。亦卽 置，而能將一定之 來取代靜電力的話，與使二羅倫茲力 靜電力的情形不同的，理論上立置使驅動力變化之 得一定之驅動力。 此〃了動部之位置無關的獲 例如’若電極間隔為50“，電極形 ’電壓為5V，介電率m〇"m方形 為叫另-方面若i:;，：前述⑴式之靜電力F1 長度之電流路徑，施加…：形之電極上作成5。“ «丨…流時，:=NT:磁場的話，則當通 r J r η之羅偷錄力。為了以靜電力 仔到㈣以上之力，必須將電極間隔設定在了…下： 將電極形狀設定在35〇 或 之驅動力，使用羅偷兹力較為有利。因此可知欲得到相同 致動哭2 ,力將2〇丽方形之如鐵删系磁鐵配置在離微 之位置的話，能輕易的得到〇·π之磁通密声。 如前所述，在微致動器中，若使用羅倫兹力來取 電力的活’則不必施加高電壓且不影響小型化， ： 可動部之可動範圍。 Κ大 =過’發明人發現，若在微致動器中使用羅倫兹 取代#電力的話，則會產生新的問題。亦即 茲力來取代靜電力時，係藉由罹田 、、兩 定m 口# 力使可動部移動到既 夂位置’且猎由羅倫兹力將可動部持續保持在該位置 上所述’由於係持續通以用來產生羅儉茲力的電流，故消 200404174 耗電力明顯增大。 例如，在大型光開關之應用中，因在一個光開關裝置 中具有數萬個致動器，故強烈要求降低各致動器之消耗電 力。例如’在1 〇〇 X〗〇〇頻道之光開關中，例如，為了選擇 頻道，必須在半導體基板上製作M〇s開關。設M〇s開關之 阻抗為1 0k Ω，則此處持續通以1 mA之電流時，1個M0S開 關之消耗電力為l〇mW。因此處有！萬個，故合計也有1〇〇w 之消耗電力，因發熱過大，故在實用上有問題。 【發明内容】 本發明為解決上述問題點，其目的在於，係提供一種 不須施加高電壓且不影響小型化，能擴大可動部之可動範 ，亚減低消耗電力的微致動器、微致動器襄置、光開關及 ::明人進—步研究結果，發現在微致動器中，以 述目的。亦]『靜：力與羅倫茲力之構成的話，即能達成$ 部移動之可^發現在具有岐部與設置錢相對該… 於可動 倫兹力作用於;動:)固審定/及可動部，200404174 (1) Description of the invention: [Technical field to which the invention belongs] The present invention relates to microactuators, microactuator devices, optical switches and switch arrays. [Knowledge technology] With the development of microcomputer technology, the importance of actuators has gradually increased in various fields. As an example of the field of using micro-actuators, for example, there is an optical switch for switching the optical path in optical communication and the like. An example of such an optical switch is the optical switch disclosed in Japanese Patent Application Laid-Open No. 2001-42233. It is said that the actuator of the government administration has a fixed portion and a movable unit that can move with a predetermined force, and the predetermined force is used to maintain the predetermined position. As for Bai Zhi's micro-actuators, most of them use electrostatic force as the aforementioned predetermined force. For example, the micro-actuator used in the optical switch disclosed in Japanese Patent Application Laid-Open No. 2001-42233 to move a micro-mirror moves the movable part to an upper position (micro-mirror) by electrostatic force. The position where the incident light is reflected) and the lower position (the position where the micro-mirror allows the incident light to pass directly through the incident light), and is maintained at this position. —Using this kind of microactuator of electrostatic force, the first electrode part is arranged on the solid part. W The second electrode part is arranged on the movable part. Between the second electrode portion and the second electrode portion: a voltage to generate an electrostatic force between the first and second electrode portions. ^ & The conventional microactuator using electrostatic force is not easy to expand the movable range of the movable part because it uses a static "force to move the movable part 'and maintains the electrostatic force at a predetermined position. The electrode acting on parallel flat plates The electrostatic force F1 between the dielectric constant 200404174 number e, the potential difference V, the distance between the electrodes d, and the electrode area s is expressed by the following formula (1): F1 = ε X V2 XS / (2d2)… (1) From Equation (1), if the distance d between the right and left poles becomes larger, the electrostatic force ρ 1 decreases sharply in inverse proportion to its square. Therefore, if the conventional micro-actuator has a distance d between electrodes When it is more than a certain distance, it is not easy to move the movable part, and it is difficult to expand the movable range of the movable part. Also, for a large electrode distance d, if you want to obtain a sufficient static force F1, increase the potential difference (the voltage between the electrodes) ) V, it will cause problems at the point of insulation endurance, or a high voltage generating part is necessary. Also, if the distance d between electrodes is large, and the electrostatic force F1 to be charged is increased to increase the electrode area S, then Larger size affects microactuator size Therefore, as a result of research by the inventors, in the micro-actuator, it is conceived to use Lorentz force instead of electrostatic force. Let the magnetic flux density be B (τ) and the length of the wire be L ( m), the current is KA) 'The Lorentz force F2 (N) can be expressed by the following formula (2). F2 = IxBxL ". (2) In the formula (2), there is no specified power source position Therefore, in a certain magnetic flux density, even if the position of the wire is changed, the generated Lorentz force & F2 does not change. In the micro-actuator, a current path control equivalent to the aforementioned wire is provided in the movable part. To the right, a magnetic field is applied to the current path, so that the current flows in the current path, that is, this causes the Lorentz force to act on the movable part. Even if the movable range of the movable part is wider than 4, the range is approximately the same beforehand. The magnetic field, 200404174, has a wide range of non-movable by the use of magnets and so on. Therefore, even if the force of the movable part acts on the movable part, it is also set, and it can be replaced by a certain force. Unlike the case where the two Lorentz forces are electrostatically charged, theoretically Set a certain driving force to change the driving force. This is independent of the position of the moving part. For example, 'if the electrode spacing is 50 ", the electrode shape' voltage is 5V, and the dielectric constant m 0 " m square is called another -If i:;,: the current path of the electrostatic force F1 length of the aforementioned formula, apply ...: 5 is formed on the electrode. "« 丨… When flowing,: = NT: magnetic field, when r j r η passes the recording force. In order to use electrostatic force to force above ㈣, the electrode interval must be set below ... If the shape is set to a driving force of 35 or more, it is more advantageous to use the Roots force. Therefore, it can be known that the same actuation cry 2 can be obtained. It is easy to arrange a 20-square-shaped square iron such as an iron delete magnet at a distant position. The magnetic flux density of 0 · π is obtained. As mentioned earlier, if a Lorentz force is used to obtain electricity in a micro-actuator, it is not necessary to apply a high voltage and does not affect miniaturization. Movable range. Κ 大 = 过 'The inventor found that if Lorentz is used instead of #electric power in a microactuator, a new problem will arise. That is, when zirconium is used instead of electrostatic force, it is caused by Hitoda. ，， 两 定 m 口 # The force moves the movable part to the existing position 'and the Lorentz force keeps the movable part in that position continuously.' Because of the continuous current used to generate the Luo Jianz force Therefore, the power consumption of 200404174 is significantly increased. For example, in the application of large optical switches Since there are tens of thousands of actuators in one optical switching device, it is strongly required to reduce the power consumption of each actuator. For example, in an optical switch of a channel of 100X〗 〇, for example, in order to select a channel, Mos switches must be made on a semiconductor substrate. Set the impedance of the Mos switch to 10k Ω, and when a current of 1 mA is continuously applied here, the power consumption of one M0S switch is 10mW. 10,000, so there is a total of 100w of power consumption, which is problematic in practice due to excessive heat generation. [Summary of the Invention] To solve the above problems, the present invention aims to provide a method that does not need to apply high voltage. Without affecting the miniaturization, it can expand the movable range of the movable part, and reduce the power consumption of micro-actuators, micro-actuators, optical switches, and :: The results of research on the advancement of Mingren, found that micro-actuators In order to describe the purpose. Also] "Static: the composition of force and Lorentz force, that is, you can achieve the $ part of the movement can be found ^ found that there is a Qi Department and the installation of money should be ... the action of the movable Lenz force; ) Firm certification / and movable department,

前述目的。 °卩的活’即能達S 電極部之距離變大時 Η動部之電極部與固定 當可動部之電極血，可僅以羅倫兹力使可動部移動 以靜電力來保括 "卩之距離變小時， 丨示符可動部。蕤此， 糟此不必施加高電壓且 ZUU4U4174 小型化，而能擴大可動部之可動範圍，並減低消耗電力。 、，靜電力驅動’由於係電氣性進行電容器之充放電，因 :消耗電力僅在充放電時(亦即，僅在電壓之變化時點)產 頻繁二：，如使用在光開關等之微致動器般，當可動部不 =㈣而可動部保持在^位置（係^部之電極部與 部之電極部間之距離小之位置)之期間較 以㈣力來產生用來將可動部保持在既定位置之力量的話 ，即咸大幅減低消耗電力。The aforementioned purpose. When the distance between the S electrode part becomes larger, the electrode part of the moving part and the electrode blood fixed as the moving part can be moved by Lorentz force and the electrostatic part can be covered by electrostatic force. The distance of 卩 becomes smaller, and 丨 indicates the movable part. Therefore, it is not necessary to apply high voltage and miniaturize the ZUU4U4174, but it can expand the movable range of the movable part and reduce power consumption. The electrostatic drive is used to charge and discharge the capacitors, because the power consumption is only generated frequently during the charge and discharge (that is, only when the voltage changes). Like an actuator, when the movable portion is not equal to ㈣ and the movable portion is maintained at the ^ position (a position where the distance between the electrode portion of the ^ portion and the electrode portion of the portion is small), the force is used to hold the movable portion. With the power at a given position, the power consumption is greatly reduced.

，電壓間之電容量為10pF 之、、肖杯… 動部1次時，靜電驅動份 =耗電力為4.2pW。當該微致動器…個時，合計之 月f電驅動份之消耗電力為 ^ ^ ^ ^ ^ , 在固定部之電極部與 ^之電極㈣之距離小之位置，即使兩者間之電麼較 低且電極面積較窄，亦能得到充份大小之靜電力。 之』Γ力驅動，由於能與可動部位置無關的獲得一定When the capacitance between the voltages is 10pF, when the Xiaobei cup ... the moving part is once, the electrostatic drive component = power consumption is 4.2pW. When the number of micro-actuators is…, the total power consumption of the electric drive components of the month f is ^ ^ ^ ^ ^, in a position where the distance between the electrode portion of the fixed portion and the electrode ㈣ of the ^ is small, even if the electric power between the two is The lower the electrode area and the narrower the electrode area, the stronger the electrostatic force can be obtained. It is driven by Γ force, because it can obtain a certain value regardless of the position of the movable part.

:=，因此若以羅倫兹力使可動部移動的話，即能擴 大可動範圍。羅倫茲力消 L 的，假設用來選擇頻道之單片:例如’與前述例同樣 kQ::_“0S開關每1分鐘通以lmA之電流 l〇msec(相當於可動部 么η 之移動期間）時’羅倫兹力驅動份之 :Γ·”。當微致動器有1萬個時，合計之羅倫 炫力驅動份之消耗電力為碑 、、 動時之消耗電力贿相較，能大^仏時以羅倫兹力驅 體消耗電力中絕大部分皆被羅产：=耗電力。雖然整 沒有大的問題。 羅“力佔有’但實用上幾乎 10 200404174 &所4在^1致動15中’搭載使靜電力產生之結構 j、·隹倫％力產生之結構兩纟，藉此，例如，以靜電力來 一^將可動部保持在㈣位置之力，以減低消耗電力，另 面’當可動電極與固定電極之間隔變大時，以羅倫兹 ::動致動器，即能在抑制施加高電壓或電極面積擴大 同時’擴大可動範圍。 而完::明係根據以上說明之本發明人研究結果之新構想 器，^即’用來達成前述目的之第1發明，係一種微致動 二、有固疋部、及設置成能相對該固定部移動的可 動一 ’（b)前述固定部且古馇 有第2電極部（能_由1!^電極和⑷前述可動部具 述第1… 部間之電麗，在與前 0 ^ ^之間產生靜電力）、與電流路徑（配置在$ p 内稭由通電來產生羅儉兹力)。 置在磁场 ，成前述目的之第2發明，係 别迷可動部係由薄膜構成。 ^發明中’因可動部係由薄膜形成，故能將可 二里化，減低消耗電力。又，因能 造可動部，故能降低製造成本，並且容易陣列化體“來製 用來4成前述目的之第3 _，㈣ 2發明中，前述雷冷敉斤 I明或第 動至前述靜電力:::Γ係配置成能在使前述可動部移 曰大之第1位置的方向產生羅倫茲力 QH Aj , m 口此有效施加使可動部移動 之位置所需要之羅产η 秒_呆持可動部 、、、研絲力，故能減低產生羅倫茲力之消耗 11 ZUU4U41/4 電力。 用來達成前述目的之笸^ 前述可動部係設置成能在前係前述第3發明中， 或消失之第2位置間移動，二位置與前述靜電力降低 置之復原力。 且此產生欲復原至前述第2位 故能=二，動:能移動到靜電力達不到之位置， 置之r r邛之可動範圍。又，當可動部移動到第2位 罝之際，係用復原力來移動 ㈣弟2位 。 文不而要該移動所需之電力 4 用來達成料目的之f ，第1電極部與前述第2電極部係:向配= 二可動部係透過具有彈性之彈性部，機械連接:置： ，而使前述可動部位於前述第w^b 固定 第2電極部間之間隔傲 、 引述第1及 仅置時，使前述第二二在前述可動部位於前述第2 彳一藉由前部間之間隔變、 本發明中’因可動部能移動到靜電力達不到 Ϊ能擴大可動部之可動範圍。又，當可動部移動二位 力之際，係藉由復原力來移動，故不需要該移動所需之電 用來達成前述目的之第6發明，係前述 2發明中，前述固定部具有…極部，前述可動 轉由與前述第3電極部間之電壓而能在與 = 之間產生靜電力的第4電極部。 电極部 12 200404174 本發明中，能進-步擴大可動部之可動範圍。 用來達成前述目的之第7 I田乂、上μ 士明，係則述弟6發明中， 兼用别述弟2電極部與前述第4電極部。 本發明令，因構成單純，故能減輕 少’故能降低製造成本。 I又因製私 用來達成前述目的之第8發 7發明中，乂、+、兩、夫- 七月係别述弟6發明或第 聽私 月卜路控’係配置成能使前述可動部分別 移動至第1位置及第2位置之久古“ I J動W刀別 1位置係前述第i及第2電極 …，β亥弟 俞汁楚Q 所產生之靜電力增大且 刖述弟3及第4電極部間 置，兮筮. 靜電力降低或消失的位 μ弟2位置係前述第丨及第2電極 力降低或消失且前述第3及第 “產生之靜電 增大的位置。 4電極部間所產生之靜電力 本發明中’因能有效施加使 之位置所兩夕士 動°卩移動到保持可動部 力。而之羅倫…故能減低產生羅倫兹力之消耗電 =達成前述目的之第9發明，料 則述:動部係設置成能產生欲復原前述第i及第2中 之既定位置之復原力。 置間 因係藉由 卢本發明中，當可動部移動到既定位置之際 復原力來移動，故不需要該移動所需之電力。τ 發明中， 與前述第 電極部對向配置，(b)前述第3電極部係在相對前:二: 二用來達成前述目的之第10發明，係前述第 (a)蝻述第丨電極部係在相對前述可動部之i側 13 部之另一側，與前述第 係透過具有彈性之彈性部，向配置，⑷前述可動部 述可動部位於前述第^ 械連接於前述固定部，當前 間之第1間隔變小，且述吏則述第1及第2電極部 間隔變大，當前述可動：:二弟3及第4電極部間… 1間隔變大，前述第2間隔變：迷第2位置時，使前述第 本發明中，當可動邱銘 復原力來移動，故也不'既定位置之際’因亦藉由 文也不需要該移動所需之f力。 用來達成前述目的之篦n ，其特徵在於，具備： 毛明，係-種微致動器裝置 微致動器，係前述第！發明到第 致動器； T <仕個裰 磁場產生部’係產生前述磁場；以及 a控制部，其係控制前述第ι及第2電極部間 月丨】述電流路徑所流之電流。 电垒及 本發明中，因能抟舍丨S， 口此徑制羅儉兹力之大小或所產 ’故能用適當之條件來驅動微致動器。 ’序 用來達成前述目的之第12發明，係前述第 ，⑷前述控制部在前述可動部移動到前述第！位置：r 係藉由前述羅倫兹力或前述羅倫兹力及前述靜電力，心 制前述電壓及前述電流以使前述可動部移動： 置，_述㈣部在將前料動料持在前述第 至少疋保持狀態下’藉由前述靜電力 ’以使别迷可動部保持在前述第1位置，且進行控制以使 14 200404174 前述電流不流動。 本發明中，僅在可動部移動 來產生羅倫兹力之電力，由於A 位置之際，需要用 置，僅利用靜電力，故能::::::動部保持在第1位 用來達成前述目的之第13發明广要一之耗電力。。。 ，其特徵在於，具備： 糸種微致動器裝置 前述第6發明到第1〇發 ^ 之任一個微致動器； 磁％產生部，係產生前述磁場；以及 控制部，係控制前述第丨及篦 izfl ^ Ί ^ ^ A ^ s 2電極部間之電壓、前 述第3及弟4電極部間之電壓、 月，j 電流。 乂及、机於則述電流路徑之 本發明中，因能控制羅倫兹力之大小 ’故能用適當之條件來驅動微致動器。 之夺序 二來達成前述目的之第14發明，係前述第13發明Φ ，U)則述控制部使前述可 " 係藉由前述羅倫兹力，·由4 ^述幻位置之際， 戈精由則述羅倫茲力及 第2電極部間之前述 則逃弟1及 月J述静電力，來控制前述第丨 部間之電壓、前述第 弟2電極 及弟4電極部間之電愿 電流路徑所流之電流，以使前述可動部移動 置’㈦前述控制部係使前述可動部移動到前=乂位 際二藉由前述羅儉兹力，或藉由前述羅倫兹置之 及第4電極部間之^ 及刖述苐3 电不丨間之則述靜電力’來控制前 爾之電壓、前述第3及第4電極部間：電=2電 於刖述電流路徑之電、、* # ^ 及流 瓜，以使别述可動部移動到前述第2 15 /η- 位置，（c)前述控制部在將前述 之至少韁宏仅姑& At 動0卩保持在前述第1位置 ^疋保持狀態下’藉由前 < 置 前述靜電力，來控制前述第i 及弟2電極部間之 第3及第4電極部間之 电極邛間之電壓以及 第W置，且進行控制以使前述^^可動動部/呆持在前述 部在將前述可動部保持在前述第動’⑷前述控制 態下，藉由前述第3及第4電極二置；至少穩定保持狀 制前述“與第2電極部門之間之前述靜電力，來控 間之電Μ，以使前述可動部 弟3“ 4電極部 控制以使前述電流不流動。别述第2位置，且進行 本發明中，僅在將可動部移動到第i 业 用來產生羅倫兹力之電力 …要 ，因只利用靜電力，故將可動部保持在第1位置 減低保持所需要之消耗電力。 用來達成前述目的之篦 徵在於，具備： 第U發明’係-種光開關，其特 述第^月到第1 °發明中任-個微致動器；以及 反射鏡，係設置在前述可動部。 f來達成前述目的之第16發明，係一種光開關陣列， 其特被在於，具有籍卷彳义 灵數個可述第15發明之光開關，該複 數個光開關係配置成2維狀。 用來達成則述目的之第17發明，係前述第1 6發明中 備有電路，該電路你七人 你包含複數個開關元件，其係應答前述 複數個光開關各行之行選擇訊號及前述複數個光開關各列 之列選擇訊號’對所選擇之行及列之光開關，進行前述電 16 200404174 流及前述電壓之控制。 【實施方式】 以下，參照圖式說明本發明實施形態例之微致動器、 及使用微致動器之微致動器裝置、光開關及光開關陣列。 [第1實施形態] 第1圖，係顯示具備本發明第1實施形態之光開關陣 列1之光開關系統例的概略構成圖。為了便於說明，如第 1圖所示，定義彼此正交之X軸、γ軸、Z軸（關於後述之 圖也是同樣）。光開關陣列1之基板丨丨之面與XY平面平行 _ 。又，為了便於說明，z軸方向之+側稱為上側，z軸方 向之一側稱為下側。 此光開關系統，如第1圖所示，具備：光開關陣列1 、Μ條光輸入用光纖2、Μ條光輸出用光纖3、N條光輸出 用光纖4、磁鐵5(係對光開關陣列i，如後述，作為產生: =, If the movable part is moved by Lorentz force, the movable range can be enlarged. Lorentz tries to eliminate L, assuming a single chip used to select a channel: for example, 'same as the previous example, kQ :: _ "The 0S switch passes an lmA current of 10 msec every 1 minute (equivalent to the movement of the moving part η) Period) when 'Lorentz Force Driven: Γ ·'. When there are 10,000 micro-actuators, the total power consumption of the Loren ’s driving force is the monument. Compared with the power consumption of the driving force, it can be used to drive the power consumption of the Lorentz force. Most of them are produced by Luo: = power consumption. Although there is no big problem. Luo "force possession" but practically 10 200404174 & so 4 in ^ 1 actuation 15 'is equipped with a structure that generates an electrostatic force j, a structure that generates a force%, by which, for example, the electrostatic Lilaiyi ^ The force that keeps the movable part in the ㈣ position to reduce the power consumption. On the other hand, when the interval between the movable electrode and the fixed electrode becomes larger, the Lorentz :: actuator can suppress the application. High voltage or electrode area expansion while 'expanding the movable range. End :: Ming is a new conceiver based on the research results of the present inventors described above, ie,' the first invention for achieving the aforementioned purpose is a micro-actuation 2. There is a fixed part and a movable part provided to be able to move relative to the fixed part. (B) The aforementioned fixed part has a second electrode part (can be made up of 1! ^ Electrode and the aforementioned movable part. 1 ... The electric power of the ministry generates electrostatic force between the first 0 ^ ^ and the current path (arranged in $ p to generate Luojianz force by electricity). Placed in a magnetic field, it becomes the first In the invention, the movable part is made of a thin film. ^ In the invention, 'because of the movable part The thin film is formed, so that it can be doubled, and the power consumption can be reduced. Also, because the movable part can be made, the manufacturing cost can be reduced, and the array body can be easily fabricated to be used for the third purpose 40% of the above purpose, ㈣ 2 In the invention, the aforementioned thunderbolt can be moved to the aforementioned electrostatic force ::: Γ system so as to generate a Lorentz force QH Aj in the direction of moving the movable portion to a larger first position, where Effectively apply the Luo production η seconds required to move the movable part _ stay holding the movable part, grinding wire, and grinding power, so it can reduce the consumption of 11 ZUU4U41 / 4 electricity generating Lorentz force. To achieve the aforementioned purpose, the movable part is provided with a restoring force capable of moving between the second position of the aforementioned third invention or the disappeared second position, and the second position and the aforementioned electrostatic force reducing position. And this results in the desire to return to the aforementioned second position, so energy = two, kinetic: can move to a position where the electrostatic force cannot reach, and set r r 邛 to the movable range. When the movable part moves to the second position, the second position is moved by the restoring force. The text not only wants the electric power 4 required for the movement to achieve f, the first electrode part and the aforementioned second electrode part system: the alignment = two movable parts through the elastic part with elasticity, mechanical connection: set: When the movable part is located at the interval between the w ^ b fixed second electrode part, and when the first part and the only part are cited, the second part is located at the second part between the movable part and the front part. As the interval changes, in the present invention, the movable range of the movable portion can be enlarged because the movable portion can move to a point where the electrostatic force cannot be reached. In addition, when the movable part moves by two forces, it is moved by restoring force. Therefore, the sixth invention according to the aforementioned two inventions does not require the electricity required for the movement to achieve the aforementioned purpose. For the pole part, the movable electrode is a fourth electrode part capable of generating an electrostatic force between and by the voltage between the movable part and the third electrode part. Electrode section 12 200404174 In the present invention, it is possible to further expand the movable range of the movable section. In order to achieve the aforementioned purpose, the 7th Tian Tian, Shang Shiming, and Department 6 of the invention, use both the other 2 electrode section and the fourth electrode section. According to the present invention, since the structure is simple, it can be reduced and the manufacturing cost can be reduced. In the eighth and seventh inventions that were used to achieve the aforementioned purpose due to private control, the 乂, +, two, husband-July is the 6th invention or the second listening to the road control, is configured to make the aforementioned movable The ancient part "IJ moving W knife type 1 position is the i-th and second electrodes mentioned above ..., β Haidi Yu Ju Chu Q increased the electrostatic force and described the brother 3 The fourth electrode portion is interposed, and the position where the electrostatic force is reduced or disappeared is the position where the electrostatic force is reduced or disappeared, and the aforementioned third and third "generated static electricity are increased." 4 Electrostatic force generated between the electrode portions In the present invention, the force applied to move the position to the position where the movable portion is moved to maintain the movable portion is effectively applied. And Loren ... Therefore, it can reduce the power consumption that generates Lorenz force = the ninth invention that achieves the aforementioned purpose. It is stated that the moving part is set to produce the restoration that is intended to restore the predetermined position in the aforementioned i and 2 force. The intermediate position is moved by the restoring force when the movable part is moved to a predetermined position in the present invention, so the power required for the movement is not required. τ In the invention, it is arranged opposite to the first electrode portion, (b) the third electrode portion is opposite to the front: two: the tenth invention for achieving the foregoing object, which is the (a) above-mentioned electrode The part is arranged on the other side of the 13 part opposite to the i side of the movable part, and is arranged through the elastic part having elasticity toward the aforementioned part, and the movable part is located at the aforementioned mechanical connection to the fixed part. Currently, The first interval between them becomes smaller, and the official says that the interval between the first and second electrode portions becomes larger. When the foregoing is movable :: between the second and third electrode portions ... 1 interval becomes larger, the aforementioned second interval becomes: When the second position is lost, the moving force of Qiu Ming can be moved in the above-mentioned first invention. Therefore, the force required for the movement is not required because of the position.篦 n, which is used to achieve the foregoing purpose, is characterized by: Mao Ming, a kind of micro-actuator device, a micro-actuator, which is described above! Invented to the second actuator; T < a magnetic field generating section ' generates the aforementioned magnetic field; and a control section which controls the current flowing between the aforementioned current path and the second electrode section. In the electric barrier and the present invention, the micro-actuator can be driven under appropriate conditions because it can be used to control the magnitude or production of the Roquez force. The twelfth invention for achieving the aforementioned purpose is the aforementioned, and the aforementioned control section moves to the aforementioned section in the movable section! Position: r refers to the aforementioned Lorentz force or the aforementioned Lorentz force and the aforementioned electrostatic force to control the aforementioned voltage and the aforementioned electric current to move the movable portion: In the aforementioned at least 疋 holding state, the movable part is maintained at the aforementioned first position by 'the electrostatic force', and is controlled so that the current does not flow. In the present invention, the electric power generating the Lorentz force is generated only when the movable part is moved. Since the position A is used, only the electrostatic force is used, so that the movable part can be kept at the first position for: The thirteenth invention, which achieves the aforementioned object, has a wide power consumption. . . It is characterized by comprising: one of the microactuators of any one of the sixth invention to the tenth issue ^ of a microactuator device; a magnetic% generating unit that generates the magnetic field; and a control unit that controls the first丨 and 篦 izfl ^ Ί ^ ^ A ^ s 2 The voltage between the two electrode sections, the voltage between the aforementioned third and fourth electrode sections, the month, and the j current. In addition, in the present invention, where the current path is described, the micro-actuator can be driven under appropriate conditions because it can control the magnitude of the Lorentz force. The fourteenth invention that achieves the aforementioned purpose is the thirteenth invention Φ, U). The control unit makes the aforementioned "available" by the aforementioned Lorentz force. Ge Jing uses the Lorentz force and the aforementioned electrostatic force between the first and second electrodes to control the voltage between the first and second electrodes and between the second and fourth electrodes. The electric current flowing in the electric current path causes the movable portion to move. The control unit moves the movable portion to the front position. The position is set by the Luo Jianz force or by the Lorentz. ^ And the description between the 4th electrode section and the 3rd description of the electrostatic force are used to control the previous voltage, and between the 3rd and 4th electrode sections described above: electricity = 2 and the current path Electricity, * # ^, and flow melon so that the other movable part moves to the aforementioned 2 15 / η- position, (c) the aforementioned control part keeps at least the aforementioned macro only & At In the first position ^ 疋 holding state, 'by placing the aforementioned electrostatic force, the third and fourth between the i-th and the second-electrode portions are controlled. The voltage between the electrode section and the electrode section and the W-th position are controlled so that the aforementioned movable section / stay in the aforementioned section. While maintaining the aforementioned movable section in the aforementioned movable state, the aforementioned control state is used. The third and fourth electrodes are placed in two; at least the aforementioned electrostatic force between the aforementioned "and the second electrode section is stably maintained to control the electric current M, so that the movable part 3" 4 electrode section is controlled to The aforementioned current is prevented from flowing. Regardless of the second position, and in carrying out the present invention, only when the movable part is moved to the i-th industry to generate the Lorentz force ... it is necessary to keep the movable part in the first position because only the electrostatic force is used Maintain the required power consumption. A characteristic for achieving the foregoing object is to include: a U-th invention, a type of optical switch, specifically a micro-actuator in the ^ th to 1 ° inventions; and a mirror provided in the foregoing Movable part. The sixteenth invention to achieve the aforementioned object is an optical switch array, which is particularly characterized by having a plurality of optical switches that can be described in the fifteenth invention, and the plurality of optical opening relationships are arranged in a two-dimensional shape. A seventeenth invention for achieving the stated purpose is a circuit provided in the aforementioned sixteenth invention. The circuit includes seven switching elements and includes a plurality of switching elements. The circuit responds to the row selection signal of each of the plurality of optical switches and the aforementioned plurality. The row selection signal of each row of the optical switches' controls the aforementioned electric 16 200404174 current and the aforementioned voltage to the selected row and row of optical switches. [Embodiment] Hereinafter, a micro-actuator, a micro-actuator device using a micro-actuator, an optical switch, and an optical switch array will be described with reference to the drawings. [First Embodiment] Fig. 1 is a schematic configuration diagram showing an example of an optical switch system including an optical switch array 1 according to a first embodiment of the present invention. For convenience of explanation, as shown in Fig. 1, the X-axis, γ-axis, and Z-axis which are orthogonal to each other are defined (the same applies to the drawings described later). The surface of the substrate 丨 丨 of the optical switch array 1 is parallel to the XY plane _. For convenience of explanation, the + side in the z-axis direction is referred to as the upper side, and the one side in the z-axis direction is referred to as the lower side. This optical switch system, as shown in FIG. 1, is provided with an optical switch array 1, M optical input fibers 2, M optical output fibers 3, N optical output fibers 4, and a magnet 5 (a pair of optical switches) The array i, as described later, is generated as

磁場之磁場產生部）、及外部控制電路6(係應答光程切換 狀態指令訊號，將控制訊號（係用來實現表示該光程切換 狀態指令訊號之光程切換狀態）供應給光開關陣列丨）。在 第1圖所示之例中，雖Μ=3, Ν=3,但从及Ν也可分別是任 意數。 个員々乜 ，‘叫”丨Ί尔Ϊ孕由万向 之+側著磁在Ν極、-側著磁在s極之板狀永久磁鐵，配 置在光開關陣列1之下側’對光開關陣歹"產生磁力線5a 所示之磁場。亦即’磁鐵5係對光開關陣列卜沿丫軸方 向’向該一側產生大致均今夕法θ 之磁％。又，作為磁場產生部 17 200404174 例如’也可使用具有其他形狀之永久磁鐵 取代磁鐵5。 鐵4來 光開關陣列1 m圖所示，具備基板11與配置 基板11上之MXN個反射鏡12。M條光輸入用光纖2 在與XY平面平行之面内’以相對基板u之叉軸方向之— 側：將入射光導入X軸方向。M條光輸出用光纖3，係：： 別對向於Μ條光輸人用光纖2之方式配置在基板^!之另: 側’且係配置在與心面平行之面内，以使行進於X轴方 向之光（不會被光開關陣列丨之任一個反射鏡12反射）射入 。N條光輸出用光纖4，係配置在與χγ平面平行之面内， 猎由光開關陣列1之任—個反射鏡12來反射，以使行進於 Y軸方向之光射入。MxN個反㈣12’係以能分別藉由後 述之微致動器，於z軸方向直線移動而能進出及退出Μ條 光輸入用光纖2之射出光程與光輸出用光纖4之入射光程 之交叉點的方式，2維矩陣狀配置在基板11上。又，本例 中’反射鏡12之面向，係設^成其法線在與ΧΥ平面平行 之面内與X軸成45肖。又，該角度也能適當加以變更 田交更反射鏡12之角度時，視該角度來設定光輸出用 光纖4之面向即可。又，此财，驅動反射鏡12 微致動器。 此光開關系統之光程開關原理本身，與習知2維 關之光程開關原理相同。 汗 其次，針對第1圖中之光開關陣列i之單位元件之— 個光開關之構造，參照第2圖〜第5圖加以說明。第2圖 18 200404174 係線示一個光開關之概略俯視圖。第3圖係沿第2圖中之 、 XI — X2線之概略截面圖。第4圖係沿第2圖中之Y1 — Υ2 線之概略截面圖。第5圖係對應第3圖之概略截面圖，顯 不將反射鏡12保持在下側之狀態。又，第3圖係顯示將反 射鏡12保持在上側之狀態。 此光開關除具有前述反射鏡12及作為固定部之前述基 板11外’亦具備設置成能相對基板丨丨移動作為可動部的 可動板21。在基板π中，形成有作為可動板21之進入區 域的凹部1 3。本實施形態，係使用矽基板等半導體基板來_ 作為基板11，與基板丨丨中之可動板21對向部份構成為第 1電極部。當然，也可與基板丨丨不同的，在基板丨丨上以 金屬膜等來形成第1電極部。 可動板21 ’係由薄膜構成，具有：下側絕緣膜2 2，形 成在下側絕緣膜22上之2個第2電極部（23a、23b)，用來 將形成在下側絕緣膜22之電極部（23a、23b)分別電氣連接 在基板11之既定處的部分配線圖案（24a、24b)，形成在下 側絕緣膜22上、配置在第！圖中以磁鐵5所產生之磁場内_ 作為藉由通電而產生羅倫茲力之電流路徑的線圈層25，及 覆盍在該等之上側的上側絕緣膜26。第2電極部（23a、 23b)係藉由與構成前述第1電極部之基板Η間之電壓，而 能在與基板11之間產生靜電力。 作為絕緣膜（22、26)，例如，能使用SiN膜或Si02臈 等。作為電極部（23a、23b)、配線圖案（24a、24b)及線圈 層25，例如，能使用A1膜等金屬膜等。又，由於電極部 19 200404174 (23a、23b)、部分配線圖案（24a、24b)、及線圈層25被上 側絕緣層2 6所覆蓋，因此，第2圖中原本應以虛線，但為 了便於圖示，被上側絕緣膜26所遮蔽之部份亦以實線顯 示。但疋’被線圈層2 5之反射鏡1 2遮蔽之部份，則以虛 線顯示。 本實施形態中，可動板21之X軸方向兩端部係透過撓 曲部（27a、27b)(作為具有彈性之彈性部）、錨部（28a、 28b) ’以此順序機械性連接在基板11之凹部1 3之周邊部 。撓曲部（27a、27b)及錨部（28a、28b)係由下側絕緣膜 22(從可動板21直接連續延伸）、前述配線圖案（24a、24b) 之其他部份、配線圖案（29a、29b)(將線圈層25分別電氣 連接在基板11之既定處）、及上側絕緣膜所構成。又 ，配線圖案（29a、29b)係構成線圈層25之金屬膜等直接連 續延伸而成者。配線圖案（24a、24b、29a、29b)，係在錯 部（28a、28b)中，透過形成在下側絕緣膜22之孔（未圖示） ，分別電氣連接在基板11之既定處。配線圖案（24a、24b) 係藉由形成在基板Π之配線（未圖示），連接成電氣共通。 撓曲部（27a、27b)，如第2圖所示，俯視呈彎曲之形 狀。藉此，可動板21能上下（Z軸方向）移動。亦即，本實 施形悲中，當靜電力及羅倫茲力對可動板21無作用時， 可動板21能藉由撓曲部（27a、27b)之彈力（復原力），而在 復原之上側位置（第2位置）（參照第3圖及第4圖）、與可 動板21進入基板11之凹部13並抵接在其底部之下側位置 (第1位置）（參照第5圖）間移動。在第3圖及第4圖所示 20 200404174 之上側位置，可動板21之第2電極部（23a、23b)與作為第 1電極部之基板11之間隔變大，兩者間所產生之靜電力降 低或消失。在第5圖所示之下側位置，可動板21之第2電 極部（23a、23b)與作為第1電極部之基板n之間隔變窄， 兩者間所產生之靜電力增大。 線圈層25，係配置成能在將可動板21移動至前述靜 電力增大之第5圖所示之下側位置的方向（下方向）產生羅 徐k力。具體而§，本實施形態中，如前所述，由於係藉 由第1圖中之磁鐵5，產生沿γ軸方向朝向其一側之磁場❿ ，故線圈層2 5係如第1圖所示，配置成延伸於X軸方向。 反射鏡12 ’係直立固定在可動板21上面。如前所述 ，反射鏡12之反射面方向，係設定成在其法線與χγ平面 平行之面内與X軸形成45。角。 前述光開關構造中，係藉由反射鏡12以外之構成要件 來構成驅動反射鏡12之微致動器。 其次，著眼在1個光開關，針對其控制方法之一例及 藉由該控制方法之光開關之動作，參照第6圖加以說明。馨 第6圖，係顯示流經1個光開關之線圈層25以引起羅倫茲 力之電流（以下’稱為「羅倫兹力用電流」）、在該光開關 之第1電極部（基板11)與可動板21之第2電極部（23a、 23b)之間引起靜電力之兩者間之電壓（以下，稱為「靜電力 用電壓」）、以及該光開關之反射鏡12之位置（即可動板 21之位置）’三者間隨時間變化之關係的時序圖。 - P幵1始，羅倫兹力用電流為零，且靜電力用電壓為零 21 200404174 由撓曲部ma、27b)之彈力，反射鏡12係如第3圖及 弟4圖所示的被保持在上側位置。此狀態下，^ 3圖所 不，入射光係被反射鏡12反射而行進到紙面前側。回 之後，在時間T1，開始用以將反射#彳 射頭：12之位置開關 J第5圖所不之下側位置的控制。亦即，在時間η，羅倫 茲力用電流係設為+ 1。此處，+1係在線圈層&，產生車六 撓曲部（27a、27b)之彈力強且向下之羅倫兹力之電流。乂 反射鏡12,因此羅倫茲力而逐漸下降，在可動板u 抵接在基板U之時間T2停止，保持在第5圖所示之下側 位置。 然而，並非藉由羅倫兹力將反射鏡12持續保持在下側 位置’而是在時間T3,將靜電力用電麼設為¥後，在時間 T4，使羅倫兹力用電流為零。此處，v係至少反射鏡心 下側位置時，產生較撓曲部（27a、27b)之彈力強之&靜電力 之電壓。期間T2—T3,反㈣12係僅藉由羅倫兹1而保 持在下側位置，射β”3—Τ4，係藉由羅倫茲力及靜電力， 將反射鏡1 2 j呆持在下側位置，至於時μ Τ4以後，僅藉由 靜電力，將反射鏡12保持在下側位置。期間Τ2〜了4，係 將反射鏡12在下側位置之保持從羅倫兹力開關到靜電2 ’所謂的下側保持之過渡期間，期間Τ4以後，則係二田The magnetic field generating part of the magnetic field) and the external control circuit 6 (responding to the optical path switching state command signal, and supplies the control signal (for realizing the optical path switching state indicating the optical path switching state command signal) to the optical switch array ). In the example shown in Fig. 1, although M = 3 and N = 3, subordinates and N may be arbitrary numbers, respectively. A member of the board, 'calling', is a plate-shaped permanent magnet with universal side + side magnets on the N pole and-side side magnets on the s pole. It is arranged under the optical switch array 1 'to the light The switch array 歹 " generates a magnetic field shown by magnetic field lines 5a. That is, the "magnet 5 generates a magnetic% of approximately equal tonight θ to that side along the axis direction of the optical switch array". Also, as the magnetic field generating unit 17 200404174 For example, 'Permanent magnets with other shapes may be used instead of magnet 5. Iron 4 is shown in the optical switch array 1 m, and it has a substrate 11 and MXN reflectors 12 on the substrate 11. M optical fibers for light input 2 In the plane parallel to the XY plane, in the direction of the cross axis of the substrate u—the side: the incident light is directed into the X axis direction. M optical fibers for light output 3, series: do not face the M light for human input The method of the optical fiber 2 is arranged on the other side of the substrate ^! And is arranged in a plane parallel to the central surface so that the light traveling in the X-axis direction (will not be reflected by any of the mirrors 12 of the optical switch array 丨) Injection. N light output fibers 4 are arranged in a plane parallel to the χγ plane. Off any one of the array 1-a mirror 12 is reflected so that the light traveling in the Y-axis direction is incident. The MxN reflections 12 'are linearly movable in the z-axis direction by micro-actuators described later, respectively. A method capable of entering and exiting the intersection of the optical path lengths of the M optical input fibers 2 and the optical path lengths of the optical output fibers 4 is arranged on the substrate 11 in a two-dimensional matrix. Also, in this example, the 'reflector 12' The orientation is set so that its normal line forms a 45 angle with the X axis in a plane parallel to the XY plane. Also, when this angle can be changed appropriately, the angle of the field cross reflector 12 is set according to the angle. The output only needs to face the optical fiber 4. In addition, in this case, the mirror 12 micro-actuator is driven. The principle of the optical path switch of this optical switch system is the same as the principle of the conventional two-dimensional switch of the optical path switch. The structure of an optical switch of the unit element of the optical switch array i in Fig. 1 will be described with reference to Figs. 2 to 5. Fig. 18 200404174 is a schematic plan view of an optical switch. Fig. 3 is along Figure 2 is a schematic cross-sectional view taken along the line XI-X2. Figure 4 is taken along 2 is a schematic cross-sectional view of line Y1— —2. FIG. 5 is a schematic cross-sectional view corresponding to FIG. 3, and shows the state where the mirror 12 is held on the lower side. Moreover, FIG. 3 shows the state where the mirror 12 is held The state of the optical switch is on the upper side. In addition to the aforementioned reflector 12 and the aforementioned substrate 11 as a fixed portion, this optical switch is also provided with a movable plate 21 provided as a movable portion that can be moved relative to the substrate. The substrate π is formed as The recessed part 13 in the movable area of the movable plate 21. In this embodiment, a semiconductor substrate such as a silicon substrate is used as the substrate 11 and the portion facing the movable plate 21 in the substrate is configured as the first electrode portion. Of course, Unlike the substrate 丨 丨, the first electrode portion may be formed of a metal film or the like on the substrate 丨 丨. The movable plate 21 ′ is made of a thin film, and includes a lower insulating film 22 and two second electrode portions (23 a and 23 b) formed on the lower insulating film 22. (23a, 23b) Partial wiring patterns (24a, 24b) electrically connected to predetermined positions of the substrate 11 are formed on the lower insulating film 22, and are arranged at the first! In the figure, the coil layer 25 in the magnetic field generated by the magnet 5 is a current path that generates a Lorentz force by being energized, and an upper insulating film 26 covering the upper side. The second electrode portion (23a, 23b) is capable of generating an electrostatic force between the second electrode portion (23a, 23b) and the substrate 11 constituting the first electrode portion. As the insulating films (22, 26), for example, a SiN film, Si02 (R), or the like can be used. As the electrode portion (23a, 23b), the wiring pattern (24a, 24b), and the coil layer 25, for example, a metal film such as an A1 film can be used. Since the electrode portion 19 200404174 (23a, 23b), part of the wiring pattern (24a, 24b), and the coil layer 25 are covered by the upper insulating layer 26, the dotted line in FIG. 2 should have been originally used. As shown in the figure, the portion shielded by the upper insulating film 26 is also shown by a solid line. However, the part of 疋 'which is shielded by the reflecting mirror 12 of the coil layer 25 is displayed with a dotted line. In this embodiment, both ends of the movable plate 21 in the X-axis direction are connected to the substrate mechanically in this order through the flexures (27a, 27b) (as elastic portions having elasticity) and the anchors (28a, 28b). Concave portion of 11 and peripheral portion of 3. The flexures (27a, 27b) and the anchors (28a, 28b) are formed by the lower insulating film 22 (which extends directly and continuously from the movable plate 21), the other parts of the aforementioned wiring pattern (24a, 24b), and the wiring pattern (29a 29b) (each coil layer 25 is electrically connected to a predetermined position of the substrate 11) and an upper insulating film. The wiring patterns (29a, 29b) are formed by directly and continuously extending a metal film or the like constituting the coil layer 25. The wiring patterns (24a, 24b, 29a, 29b) are electrically connected to predetermined locations on the substrate 11 through holes (not shown) formed in the lower insulating film 22 in the wrong portions (28a, 28b). The wiring patterns (24a, 24b) are connected to be electrically common by wirings (not shown) formed on the substrate Π. The flexures (27a, 27b) are curved as shown in Fig. 2 in plan view. Thereby, the movable plate 21 can move up and down (Z-axis direction). That is, in this embodiment, when the electrostatic force and the Lorentz force have no effect on the movable plate 21, the movable plate 21 can be restored by the elastic force (restoring force) of the flexures (27a, 27b). The upper position (second position) (refer to FIGS. 3 and 4), and the movable plate 21 enters the recessed portion 13 of the base plate 11 and abuts the lower position (first position) (see FIG. 5) of the bottom portion thereof. mobile. At the position above 20 200404174 shown in Figs. 3 and 4, the distance between the second electrode portion (23a, 23b) of the movable plate 21 and the substrate 11 as the first electrode portion is increased, and the static electricity generated between the two is increased. Force decreases or disappears. At the lower position shown in Fig. 5, the distance between the second electrode portion (23a, 23b) of the movable plate 21 and the substrate n serving as the first electrode portion is narrowed, and the electrostatic force generated therebetween increases. The coil layer 25 is arranged so as to generate a k-force in a direction (downward direction) in which the movable plate 21 is moved to the lower position shown in FIG. 5 in which the static electricity is increased. Specifically, § In this embodiment, as described above, since the magnetic field 朝向 is generated by the magnet 5 in FIG. 1 toward one side along the γ-axis direction, the coil layer 25 is as shown in FIG. 1. As shown, it is configured to extend in the X-axis direction. The reflecting mirror 12 'is fixed on the movable plate 21 upright. As described above, the direction of the reflecting surface of the mirror 12 is set to form 45 with the X axis in a plane whose normal is parallel to the χγ plane. angle. In the aforementioned optical switch structure, a micro-actuator for driving the mirror 12 is constituted by constituent elements other than the mirror 12. Next, focusing on one optical switch, an example of the control method and the operation of the optical switch by the control method will be described with reference to FIG. 6. Fig. 6 shows a current (hereinafter referred to as "the Lorentz force current") that causes a Lorentz force to flow through the coil layer 25 of an optical switch. The voltage between the substrate 11) and the second electrode portion (23a, 23b) of the movable plate 21 that causes an electrostatic force (hereinafter referred to as "electrostatic force voltage"), and the voltage of the mirror 12 of the optical switch. Position (that is, the position of the movable plate 21) is a timing chart of the relationship between the three over time. -Beginning with P 幵 1, the Lorentz force current is zero and the electrostatic force voltage is zero 21 200404174 The elastic force of the flexure ma, 27b), the mirror 12 is shown in Figure 3 and Figure 4 It is held in the upper position. In this state, as shown in FIG. 3, the incident light is reflected by the reflecting mirror 12 and travels to the front side of the paper. After the return, at time T1, the control for turning the reflection # 彳 head: position switch J on the lower side of FIG. 5 to the position shown in FIG. 5 is started. That is, at time η, the Lorentz force current system is set to +1. Here, +1 is in the coil layer & generates a current with strong elastic force and downward Lorentz force of the car six flexures (27a, 27b).乂 The mirror 12 is gradually lowered by the Lorentz force, and stops at the time T2 when the movable plate u abuts on the substrate U, and remains at the lower position shown in FIG. 5. However, instead of keeping the mirror 12 in the lower position by the Lorentz force, at time T3, the electrostatic power consumption is set to ¥, and at time T4, the Lorentz force current is made zero. Here, when v is at least the position below the center of the mirror, a voltage & electrostatic force which is stronger than the elastic force of the flexures (27a, 27b) is generated. During the period T2-T3, the ㈣12 series was kept in the lower position only by Lorentz 1. Shooting β ″ 3-T4, the mirror 1 2j was held in the lower position by Lorentz force and electrostatic force. As of the time μ T4, only the electrostatic force is used to keep the mirror 12 in the lower position. During the period T2 to 4, the mirror 12 is kept in the lower position from the Lorentz force switch to the static 2 'so-called The transition period during which the lower side is maintained, after period T4, it is Ertian

的下側保持之穩定期間。 W 反射鏡12被保持在下側位置之期間，如第5圖所示， 入射光不被反射鏡12反身于，係直接通過成為射出光。不， 之後，在時間Τ5,開始將反射鏡12之位置開關為第 22 200404174 圖及第4圖所示上側位置的控制。亦即，在時間τ5,將靜 電力用電塵設定為零。其結果’反射鏡12藉由撓曲部（27a 、27b)之彈力’較為急遽地回到帛3圖及第*圖所示之上 側位置，藉由該彈力持續保持在上側位置。 如前所述’當可動板21之第2電極部…、饥與基 板11(第1電極部)間之間隔大時，藉由其大小不依存於反 射鏡位置(可動板21之位置)的羅倫兹力，抵抗撓曲部 (27a 27b)之彈力使反射鏡12移動到下側位置。因此，不 需要為了提高靜電力而施加高電塵、或影響小型化，即能 擴大可動板21之可動範圍。又，在可動板21之第2電極 部（23a、23b)與基板u(第！電極部）間之間隔變小之下側 位置之保持穩定狀態’由於僅藉由靜電力來將反射鏡Μ 保持在下側位置，故能減低消耗電力。 又，前述例中，時間T2與時間T4間之時間T3，係將 靜電力用電壓設定在V，但在期間Τ1 — Τ4之任一時點，皆 可將靜電用電壓設定在V，亦可在時間T1之前，將靜電力 用電壓設定在V。又，當可動板21位於上側位置時，若將 靜電力用電壓設定在V時所產生之靜電力較撓曲部Uh、 27b)之彈力小的話，則在時間T5後，可動板2ι移動到上 側位置後，在上側保持期間將靜電力用電壓設定在ν亦可 後述第8圖例之右側的電壓更新（ref resh)期間，即相當 於這種情形。 第1圖所示之光開關陣列丨，具有複數個作為前述單 位7L件之第2圖〜第5圖所示之光開關，此等光開關係配 23 200404174 置成2維矩陣狀。又，第1圖所示之光開關陣列1中，為 了對此等各個光開關，能以少條數之控制線來實現前述控 制搭載了弟7圖（包含複數個開關元件）所示之電路。第 7圖係顯示光開關陣列1之電路圖。 第7圖中，為簡化說明，將9個光開關配置成3行3 列。畜然’其數量無任何限定，例如，具有1 〇 〇行1 〇 〇列 之光開關時，其原理也相同。 第2圖〜第5圖所示之單一光開關，在電路上，可視 為1個電容器（相當於並聯第2電極23a與第1電極（基板籲 11)所形成之電容器、及第2電極23b與第丨電極（基板 11)所幵y成之電谷器的合成電容器）與1個線圈（相當於線圈 層25)。第7圖中，分別以Cmn及Lmn來顯示m行η列之 光開關之電容器及線圈。例如，分別以cu及Lu來表示 第7圖中左上之（丨行丨列之）光開關之電容器及線圈。 為了減少控制線之條數，第7圖所示之電路中，對電 容器Cmn及線圈Lmn，分別設置列選擇開關（Mmnb、Mmnd) 與行選擇開關（Mmna、Mmnc)。電容器Cmn之一端係連接在_ 行選擇開關Mmna之一端，行選擇開關Mmna之另一端係連 接在列選擇開關Mmnb之一端，列選擇開關Mmnb之另一端 則連接在電壓控制開關MCI之一端及MC2之一端。電容器 Cmn之另一端接地。電壓控制開關ΜΠ之另一端連接在箝 位電壓VC，電壓控制開關MC2之另一端則接地。 又線圈Lmn之一端係連接在行選擇開關Mmnc之一端 ，行選擇開關Mnmc之另一端係連接在列選擇開關Mmnd之 24 200404174 一知’列選擇開關Mmnd之另一端係連接在電流控制開關 MC3之一端。線圈Lmn之另一端接地。電流控制開關MC3 之另一端係連接在電源流11(供應前述電流+ 1)之一端， 電流源11之另一端則接地。 作為開關元件之列選擇開關（Mmnb、Mmnd)、行選擇開 關（Mmna、Mmnc)、電壓控制開關（MC1、MC2)及電流控制開 關MC3 ’例如’當使用矽基板來作為基板n時，能用基板 11所形成之N型M0S電晶體來構成。 第1行之行選擇開關（诞113、籠11(：、骱2&、1^12(：、}^133_ 、M13c)之閘極係連接在端子π。同樣地，第2行之行選 擇開關之閘極係連接在V2，第3行之行選擇開關之閑極係 連接在V3。 第 1 列之列選擇開關（Mi ib、Ml Id、M21b、M2 Id、M3 lb 、M31d)之閘極係連接在端子H1。同樣地，第2列之列選 擇開關之閘極係連接在H2,第3列之列選擇開關之閘極係 連接在H3。 其次’於第8圖中顯示施加至各端子^、V2、v3、則φ 、Η2、Η3、Cl、C2、C3)之電壓時序圖之一例）。帛8圖中 ’時間tl以i ’係將所有光開關之電容器—偏壓在籍位 電壓vc之電壓更新期間。因此，在該期間，端子（νι、v2 、V3、H1 \H2、H3)全部為高位準’所有列選擇開關（Mnrnb 、Mmnd)及行選擇開關（Mmna、Mmnc)成為導通狀熊。又，在 該期間，端子C1係高位準，端子C2係低位準，電壓控制 開關MCI係導通狀態’電壓控制開關MC2成為不導通狀態 25 200404174 。而且’端子C3成為低位準，電流控制開關Μ 通狀態。在電壓更新期間，反賴12係保持在上側位置 及下側位置之任—位置。至於第8圖之例，在時間u以前 之電壓更新期間，反射鏡12係保持在下側位置。 又，本實施形態中，施加至端子（VI、V2、V3、HI、H2 、H3、Π、C2、C3)之訊號（電壓）係從第i圖中之外部控制 電路6以控制訊號之形式供應。外部控制電路6，例如， 係根據光程切換狀態指令訊號，檢視應從現在位置狀離變 更之光開關，就該應變更之每1個光開關，依序i個個設 定狀態變更期間。若沒有應從現在位置狀態變更之光開^ 時，即設定前述電壓更新期間。又，在設定複數個狀態變 更期間時（也就是說，應從現在位置狀態變更之光開關數 為2個以上時），也可在各狀態變更期間之間，設定電壓 更新期間，也可不設定電壓更新期間。例如，應從現在位 置狀態變更之光開關…個以上時，可設定狀態變更期 間—電壓更新期間—狀態變更期間-電壓更新期間—狀態 變更期間，亦可連續設定狀態變更期間。此外，在所設定 之各狀態變更期間’針對對應之光開關，& 了根據所：令 t光程狀態來實現前述帛6圖所示之控制，而供應施加至 鈿子(VI、V2、V3、HI、H2、H3、Cl、C2、C3)之訊號。又 ’當然亦可將外部控制電路6搭載在光開關陣列卜 —第8圖係藉由外部控制電路6’設定電壓更新期間—工 行1列之光開關之狀態變更期間—電麼更新期間。至於第 8圖之例，在時間U以前之電壓更新期間，反射鏡㈣ 26 保持在下側位置。 能變1 ^ ' ，開始1行1列之光開關之狀 L文更期間，端子（V2 55 rη H2、H3)被設定在低位準，電 今杰C11以外之電 干 右士务 σ刀開。其次，在時間t3，C2成為 冋位準，充電在C11之電 b # 何放電，靜電力用電壓成為零。 此時間t3係對應第6 ，应 T之日寸間T5。藉此，靜電力消失 射鏡1 2移動到第3圖及筮 姓甘Α ^ 及弟5圖所示之上側位置並被保 持。其次，在時間ΐ4，端 0日r 細于C2成為低位準，進一步在時 間t5，端子C1成為高位準The lower side remains stable. While the W mirror 12 is held at the lower position, as shown in FIG. 5, the incident light is not reflected by the mirror 12 and passes directly into the emitted light. No, after that, at time T5, the position switch of the mirror 12 is started to control the upper position shown in Figures 200404174 and 4. That is, at time τ5, the static electricity dust is set to zero. As a result, the 'reflective mirror 12 is returned to the upper position shown in Fig. 3 and Fig. * By the elastic force of the flexures (27a, 27b), and is kept at the upper position by the elastic force. As described above, when the distance between the second electrode portion of the movable plate 21, ..., and the substrate 11 (the first electrode portion) is large, the size does not depend on the position of the mirror (the position of the movable plate 21). The Lorentz force resists the elastic force of the flexures (27a, 27b) to move the reflector 12 to the lower position. Therefore, it is not necessary to apply high electric dust or increase the miniaturization in order to increase the electrostatic force, that is, the movable range of the movable plate 21 can be enlarged. In addition, a stable state is maintained at the lower position where the distance between the second electrode portion (23a, 23b) of the movable plate 21 and the substrate u (the first! Electrode portion) is reduced, because the reflector M is made only by electrostatic force. Keeping it in the lower position can reduce power consumption. Also, in the foregoing example, the time T3 between time T2 and time T4 is set to the voltage for electrostatic force at V, but at any point in the period T1 to T4, the voltage for static electricity can be set to V, or at Before time T1, the voltage for electrostatic force was set to V. When the movable plate 21 is at the upper position, if the electrostatic force generated when the electrostatic voltage is set to V is smaller than the elastic force of the flexures Uh, 27b), the movable plate 2m moves to After the upper position, the electrostatic voltage can be set to ν during the upper holding period, and the voltage refresh period (right refresh period) on the right side of the eighth example will be described later, which is equivalent to this case. The optical switch array shown in Fig. 1 has a plurality of optical switches as shown in Figs. 2 to 5 of the aforementioned 7L unit. These optical opening relationships are arranged in a two-dimensional matrix. In addition, in the optical switch array 1 shown in FIG. 1, in order to realize the above-mentioned control with a small number of control lines for each of these optical switches, a circuit shown in FIG. 7 (including a plurality of switching elements) is mounted. . FIG. 7 is a circuit diagram showing the optical switch array 1. As shown in FIG. In Fig. 7, in order to simplify the description, nine optical switches are arranged in three rows and three columns. There are no restrictions on the number of animals, for example, the principle is the same when there is an optical switch with 100 rows and 100 columns. The single optical switch shown in FIGS. 2 to 5 can be regarded as a capacitor (corresponding to a capacitor formed by connecting the second electrode 23a and the first electrode (substrate 11) in parallel) and the second electrode 23b on the circuit. A composite capacitor of an electric valley device formed with the first electrode (substrate 11)) and one coil (corresponding to the coil layer 25). In Fig. 7, the capacitors and coils of the optical switches in m rows and n columns are shown by Cmn and Lmn, respectively. For example, cu and Lu are used to represent the capacitors and coils of the upper left (丨 row 丨 column) optical switches in Figure 7. In order to reduce the number of control lines, in the circuit shown in Fig. 7, column selection switches (Mmnb, Mmnd) and row selection switches (Mmna, Mmnc) are respectively provided for the capacitor Cmn and the coil Lmn. One end of the capacitor Cmn is connected to one end of the _ row selection switch Mmna, the other end of the row selection switch Mmna is connected to one end of the column selection switch Mmnb, and the other end of the column selection switch Mmnb is connected to one end of the voltage control switch MCI and MC2. One end. The other end of the capacitor Cmn is grounded. The other end of the voltage control switch MΠ is connected to the clamping voltage VC, and the other end of the voltage control switch MC2 is grounded. One end of the coil Lmn is connected to one end of the row selection switch Mmnc, and the other end of the row selection switch Mnmc is connected to the column selection switch Mmnd 24 200404174. The other end of the column selection switch Mmnd is connected to the current control switch MC3. One end. The other end of the coil Lmn is grounded. The other end of the current control switch MC3 is connected to one end of the power source current 11 (supplying the current + 1), and the other end of the current source 11 is grounded. Selection switches (Mmnb, Mmnd), row selection switches (Mmna, Mmnc), voltage control switches (MC1, MC2), and current control switches MC3 as switching elements 'for example' When a silicon substrate is used as the substrate n, it can be used The N-type MOS transistor formed on the substrate 11 is configured. The gate of the row selection switch (Birth 113, Cage 11 (:, 骱 2 &, 1 ^ 12 (:,} ^ 133_, M13c)) is connected to the terminal π. Similarly, the row selection of the second row The gate of the switch is connected to V2, and the idler of the selector switch in row 3 is connected to V3. The gate of the selector switch in the first column (Mi ib, Ml Id, M21b, M2 Id, M3 lb, M31d) The pole is connected to the terminal H1. Similarly, the gate of the selector switch in the second column is connected to H2, and the gate of the selector switch in the third column is connected to H3. Each terminal (^, V2, v3, φ, Η2, Η3, Cl, C2, C3) is an example of the voltage timing diagram). In the figure 8 'time t1 to i' is used to bias the capacitors of all optical switches during the voltage update period of the bit voltage vc. Therefore, during this period, the terminals (νι, v2, V3, H1 \ H2, H3) are all at a high level. All the column selection switches (Mnrnb, Mmnd) and the row selection switches (Mmna, Mmnc) become conductive bears. During this period, the terminal C1 is at a high level, the terminal C2 is at a low level, and the voltage control switch MCI is in a conducting state. The voltage control switch MC2 is in a non-conducting state 25 200404174. Furthermore, the 'terminal C3 becomes a low level, and the current control switch M is turned on. During the voltage renewal period, the anti-reliance 12 series remains in any of the upper and lower positions. As for the example of Fig. 8, during the voltage update before time u, the mirror 12 is kept in the lower position. In this embodiment, the signals (voltages) applied to the terminals (VI, V2, V3, HI, H2, H3, Π, C2, and C3) are in the form of control signals from the external control circuit 6 in the i-th figure. supply. The external control circuit 6, for example, is based on the optical path switching state command signal, inspects the optical switches that should be changed from the current position, and sets each of the optical switches that should be changed in order to set the period of state change. If there is no light to be changed from the current position state, the aforementioned voltage update period is set. In addition, when setting a plurality of state change periods (that is, when the number of optical switches to be changed from the current position state is two or more), the voltage update period may be set between each state change period, and the voltage may not be set. During the update. For example, if there are more than one optical switch to change the status from the current position, you can set the status change period-voltage update period-status change period-voltage update period-status change period, or you can set the status change period continuously. In addition, during each set state change period, 'for the corresponding optical switch, & achieved the control shown in Fig. 6 above according to the state of the optical path, and the supply was applied to the 钿 子 (VI, V2, V3, HI, H2, H3, Cl, C2, C3). Of course, the external control circuit 6 can also be mounted on the optical switch array. Figure 8 shows the voltage update period set by the external control circuit 6 '-the state change period of the optical switch in the first row of the bank-the electrical update period. As for the example of FIG. 8, during the voltage update before the time U, the mirror ㈣ 26 remains in the lower position. Can change 1 ^ 'and start the state of the optical switch in 1 row and 1 column. During the period of L Wenchang, the terminals (V2 55 rη H2, H3) are set to a low level. . Secondly, at time t3, C2 becomes the 冋 level, the electric charge b # at C11 is discharged, and the voltage for electrostatic force becomes zero. This time t3 corresponds to the sixth and T5 of the day of T. As a result, the static force disappears, and the mirror 12 moves to the upper position shown in FIG. 3 and the family name Gan A ^ and the younger figure 5 and is held. Secondly, at time ΐ4, the end 0 day r is finer than C2 and becomes the low level, and further at time t5, the terminal C1 becomes the high level

能變更期門…： 後’在時間t6’結束該狀 心、欠更期間，成為電壓更新期間。 從時間tl到時間之装日R , 之期間，1行1列以外之光開關 之反射鏡12之下側位晉夕/ 置之保持，係藉由各電容器所殘留 之電荷所產生之電壓。+The time gate can be changed ...: The period of time after the completion of the centering and underreaction period at time t6 'becomes the voltage update period. During the period from time t1 to the time R1 of the time, the position of the side under the mirror 12 of the optical switch other than one row and one column is maintained by the voltage generated by the charge remaining in each capacitor. +

、 ^ 因此，各電容器最好是製作成MOS 開關為非導通狀態時電荷的漏洩小。 例， 各圖 圖。 其次，針對本實施形態之光開關陣列1製造方法之-參照第9圖及第10圖加以說明。第9圖及第10圖之 ’係以示意方式顯示該製程之概略截面圖，對應第4Therefore, it is best to make each capacitor small in charge leakage when the MOS switch is in a non-conducting state. Example, each figure Figure. Next, the manufacturing method of the optical switch array 1 of this embodiment will be described with reference to FIGS. 9 and 10. 9 'and 10' are schematic cross-sectional views showing the process, corresponding to the 4th

首先’在將成為前述基板11之矽基板31中，以一般 之MOS製程來形成作為第7圖中之開關（Mmna、Mmnb、 、Mmnd、MCI、MC2、MC3)的MOS電晶體（未圖示）。又，在 矽基板11上，形成實現第7圖所示之電路所需要之配線（ 未圖示）。在此狀態之基板31表面，形成以02膜32。其次 ’在Si〇2膜32上’形成作為下側絕緣膜22之SiN膜33。 又，Si02膜32及SiN膜33上，在將配線圖案（24a、24b、 Ά 27 200404174 29a、29b)待連接在基板31所形成之M0S電晶體處，以光 I虫刻法事先形成連接用孔。在此狀態之基板31上，藉由 蒸鍍法等形成電極部（23a、23b)、配線圖案（24a、24b、 29a、29b)、及線圈層25之A1膜34後，藉由光蝕刻法， 進行圖案化，來形成這些形狀。然後，形成SiN膜35(其 係成為上側絕緣膜26)，藉由光蝕刻法，將SiN膜（33、 35)圖案化成可動板21、撓曲部（27a、27b)及錨部（28a、 28b)之形狀（第9(a)圖）。 其次’在第9(a)圖所示狀態之基板31上，形成Si02 _ 膜36。並且，除去形成Si I膜36之反射鏡12之處、及形 成Si02膜（32、36)之蝕刻孔處（第9(b)圖）。 接著’在第9(b)圖所示狀態之基板上，厚厚的塗上光 阻37。此處，將光阻37予以曝光、顯影，將反射鏡成長 之區域形成在光阻37(第9(c)圖）。然後，以電解鍍方式， 來成長作為反射鏡12之Au、Ni及其他金屬38(第l〇(a)圖 )° ° 其次，除去光阻37後，透過蝕刻孔，注入K〇H溶液，· 除去基板31之一部份（第1〇(1))圖）。最後，除去殘留之First, in the silicon substrate 31 that will be the aforementioned substrate 11, a MOS transistor (not shown) as a switch (Mmna, Mmnb, Mmnd, MCI, MC2, MC3) in FIG. 7 is formed by a general MOS process. ). In addition, on the silicon substrate 11, wirings (not shown) necessary to realize the circuit shown in FIG. 7 are formed. On this surface of the substrate 31, a 02 film 32 is formed. Next, on the SiO2 film 32, a SiN film 33 as a lower insulating film 22 is formed. In addition, on the Si02 film 32 and the SiN film 33, a wiring pattern (24a, 24b, 2004 27 200404174 29a, 29b) is to be connected to a MOS transistor formed on the substrate 31, and a connection is formed in advance by photolithography. hole. On the substrate 31 in this state, an electrode portion (23a, 23b), a wiring pattern (24a, 24b, 29a, 29b), and an A1 film 34 of the coil layer 25 are formed by a vapor deposition method or the like, and then a photolithography method is used. , Patterning to form these shapes. Next, a SiN film 35 (which is referred to as an upper insulating film 26) is formed, and the SiN film (33, 35) is patterned into a movable plate 21, a flexure (27a, 27b), and an anchor portion (28a, 28b) (Figure 9 (a)). Next, on the substrate 31 in the state shown in FIG. 9 (a), a Si02_ film 36 is formed. Then, the mirror 12 where the Si I film 36 is formed and the etched holes where the Si02 films (32, 36) are formed are removed (Fig. 9 (b)). Next, on the substrate in the state shown in Fig. 9 (b), a photoresist 37 is applied thickly. Here, the photoresist 37 is exposed and developed, and a region where the mirror grows is formed on the photoresist 37 (Fig. 9 (c)). Then, Au, Ni, and other metals 38 (FIG. 10 (a)) of the mirror 12 are grown by electrolytic plating. Secondly, after removing the photoresist 37, the KOH solution is injected through the etching hole. Remove a part of the substrate 31 (Fig. 10 (1)). Finally, remove the remaining

Si〇2膜（32、36)。藉此，完成本實施形態之光開關陣列i 〇 [第2實施形態] 第11圖係顯示本發明第2實施形態光開關睁列之單位 兀件之1個光開關之概略俯視圖。第u圖中，上側電極邱 ^本來應以實線顯示’但為了容易理解，係以虛線顯示： 28 200404174 圖倍、、Λ係沿第11圖中之X3 — X4線之概略截面圖。第u 應二第11圖中之Υ3—Υ4、·之概略截面圖。第“圖係對 狀能。：之概略截面圖，顯示反射鏡12被保持在上側之 ⑴皮伴持Γ圖係對應第12圖之概略截面圖，顯示反射鏡 d 態。又，第12圖及第13圖與前述第 4圖同樣的，顯示靜電力及羅倫兹力不作用於可 日寺’係位於藉由撓曲部（27a、27b)之彈力（復原力） ’、之位置狀態，本實施形態稱該位置為中立位置。 第11圖〜第15圖中，與帛J圖〜第5圖中之元件相 同或對應者’係附加相同符號，並省略重複之說明。 /本實施形態之光開關陣列，係在第丨圖所示之光開關 糸統中’能用來取代光開關陣列i者。本實施形態之光開 關陣列與第1圖中之光開關陣列i相異處，係在作為其單 位元件之丨個光開關中，追加可動板21上方所配置之上側 電極部（第3電極部）41。 ^上側電極部41係使用多晶矽材料來形成。第11圖〜 第15圖中，42a、42b係表示上側電極錨部，43a、43b係 表示上升部，44係表示形成在上側電極部41之中央部之 貫通孔。上側電極部41，係與上升部（43a、431〇及上側電 極鈿部（42a、42b)構成為一體，透過上升部（43a、43幻及 上側電極錨部（42a、42b)(以此順序）機械連接在基板u之 凹部13之周邊部。如前所述，由於上側電極部41係固定 於基板1，故上側電極部41係與基板丨一起構成固定部。 本實施形態中，可動板21之電極部（23a、23b)不僅能 29 200404174 :乍為在與第！電極部(基板⑴之間產生靜電力之第2電極 邛’且也能兼用作為在與上側電極部(第3電極部⑷之間 =靜電力之帛4電極部。但不進行此種兼用，而例如： ° +板21中’在絕緣膜26上形成作為該第4電極部之金 屬膜，再在絕緣膜26上形成絕緣膜亦可。 又，本實施形態中，可動板21能在上側位置（第2位 置’參照帛14圖，係可動板從前述中立位置移動到上方 而抵接於上側電極部41的位置）、與下側位置（第^位置， 參照苐15圖，係可動美你91、仓λ y* 1 j勖基板21進入基板u之凹部13而抵 接在其底部的位置）之間移動。在第14圖所示之上側位置 ’可動板21之帛2電極部⑵a、_與作為帛上電極部之 基板11之間隔變大，兩者間所產生之靜電力降低或消失 ’可動板21之第2電極部⑽、23b)與上側電極部(第3 電極部)4i間之間隔變窄’兩者間所產生之靜電力增大。 另-方面，在第15圖所示之下側位置，可動板。之第2 電極部（23a、23b)與作為第i電極部之基板u之間隔變窄 ’兩者間所產生之靜電力增大，可動才反21之第2電極部 (23a、23b)與上側電極部（第3電極部）41間之間隔變大， 兩者間所產生之靜電力降低或消失。 本實施形態中’第i電極部（基板⑴與作為第3電極 部之上側電極部41係電氣連接成共通。藉此，以可動板 之第2電極部(23a、23b)為基準，在反2ι之第2 電極部（23a、23b)㈣1電極部（基板ιυ之間、及可動板 之第2電極部⑵a、23b)與作為第3電極部之上側電極 30 200404174 部41之間，同時分別施加相同之電壓。但是，不將第1電 極°卩（基板11)與作為第3電極部之上側電極部41電氣連 接，而作成能在可動板21之第2電極部（23a、23b)與第j 電極部(基板11)之間、及可動板21之第2電極部⑵^ 23b)與作為第3電極部之上側電極部41之間，分別獨立施 加電壓亦可。 又，第11圖〜第15圖所示之光開關之構造中，係藉 由反射鏡12以外之構成要^來構成用以驅動反射鏡^ 之微致動器。 | 其次，本實施形態中，著眼在1個光開關，針對該控 制方法之一例與藉由該控制方法之光開關之動作，參照第 16圖加以說明。第16圖，係顯示流經1個光開關之線圈 層25以引起羅倫兹力之電流（以下，稱為「羅倫兹力用電 流」）、在該光開關之第丨電極部（基板u)與可動板21之 第2電極部（23a、23b)之間及該光開關之可動板21之第2 電極部（23a、23b)與上部電極部（第3電極部）之間，分別 引起之靜電力之各個間之相同電塵（以下’稱為「靜電力φ 用電壓」）、及該光開關之反射鏡12位置（即，可動板Μ 之位置）之時間變化關係之時序圖。 #-開始’羅倫兹力用電流為#，且靜電力用電壓為V ，错由可動板21之電極部（23a、23b)與上側電極部41之 間之靜電力’反射鏡係如第14圖所示’被保持在上側位 置。此時，設定電壓為v，以使電極部（23a、23b)與上側 電極部41間之靜電力較撓曲部（27a、27b)之彈性強。在此 31 200404174 入射光係被反射鏡1 2反射，然 狀態下，如第14圖所示 後行進到紙面前側。 "在寺門111中，開始將反射鏡12之位置開關到 第15圖所示之下側位置的控制。亦即，在時間”中，將 靜電力用電壓設定為零。苴纟士 其、纟。果，反射鏡12係藉由撓曲 部（27a、27b)之彈力，梦a a、老， 一 坪刀較為急遽地回到第i 2圖及第u圖 所示之中立位置。 之然後，在時間T2 Φ，脸甩/人μ丄 1Ζ中將羅倫鉍力用電流設為+ I。 此處’+ I係使線圈層25^技& μ / π 八国曆仏產生較撓曲部（27a、27b)之彈力 強且向下之羅偷兹力的電流。 反射鏡I2,藉由此羅倫茲力逐漸下降，在可動板21 抵接於基板丨丨之_ T3停止，而被保持在第15圖所示之 下側位置。 此處’並非藉由羅倫茲力將反射鏡i 2持續保持在下側 位置，而是在時間T4,將靜電力用電壓設為"灸，在時間 T5,將羅倫兹力用電流設定為零。此處，電壓v與前述值 相同，但當反射鏡12&於下側位置時，係設定為產生較 撓曲部（27a、27b)之彈力強之靜電力的電壓。在期間τ3 — τ4，僅藉由羅倫茲力將反射鏡12保持在下側位置，在期間 Τ4—Τ5，藉由羅倫茲力及靜電力將反射鏡12保持在下側位 置，時間Τ5以後，僅藉由靜電力將反射鏡丨2保持在下側 位置。期間T3 — T5，係將反射鏡12保持在下側位置之力 置從羅倫茲力換為靜電力之所謂的下側保持之過渡期間， 期間T5以後，則係所謂的下側保持之穩定期間。 32 200404174 反射鏡12被保持在下側位置之期間，如第π圖所示 ’入射光不被反射鏡12反射而係直接通過成為射出光。” 之後，在時間t6，開始將反射鏡12之位置開關到第 圖所不之上側位置的控制。亦即，在時間T6，將靜電力 用電壓，定為零。其結果，反射鏡12藉由撓曲部（27a、 27b)之彈力，較為急遽地回到第12圖及第圖所示之 立位置。 之後在時間T7，將羅倫茲力用電流設為一丨。此處 ，—Η系使線圈| 25產生較撓曲部（27a、27b)之彈力強且 向上之羅倫兹力的電流。 反射鏡12藉由此羅倫兹力逐漸上升，在可動板21 .氏 接於上側電極部41之時間T8停止，而保持在第Μ圖所示 之上側位置。 此處，並非藉由羅儉兹力將反射鏡12持續保持在上側 位置，而是在時間Τ9，將靜電力用錢設為W，在時間 no’將羅倫兹力用電流設定為零。在期$ Τ8_τ9，僅藉 由羅倫兹力將反射鏡12保持在上側位置，在期間"ο ，係藉由羅倫茲力及靜電力將反射鏡12料在上側位置 ，時間T1G以後，則僅藉由靜電力將反射鏡！被保持在上 側位置。期間T9 —T1G，係將反射鏡12保持在上側位置之 力量從羅倫茲力開關為靜電力之所謂的上側保持之過渡期 間’期讀關所謂的上㈣持之衫期間。 如前所述，當可動板21之第2電極部（23a、23b)與基 板UU i電㈣之間隔大時’係藉由其大小不依存於 33 200404174 反射鏡12位置（可動板21之位置）的羅倫兹力，來抵抗撓 曲部（27a、27b)之彈力使反射鏡12移動到下❹置。又， :又，至於可動板21之第2電極部⑵a、咖）與基板ιι( 第1電極部）間之間隔變小之下側位置保持之穩定狀態、 以及可動板21之第2電極部⑵a、23b)與上側電極部41( 第3電極部）間之間隔變小之上側位置保持之穩定狀態， 由於僅藉由靜電力將反射鏡保持在域位置，故能減低消 耗電力。 當可動板21之第2電極部⑵a、23b)與上側電極部η(第 3電極部㈣之間隔大時，係藉由其大小不依存於反射鏡12 位置的羅倫兹力，來抵抗撓曲部（27a、27b)之彈力使反射 鏡12移動到上側位置。因此，不需施加為提高靜電力之 向電壓且不影響小型化，即能擴大可動板2ι 4可動範圍 又，前述例中，在時間T3與時間T5間之時間τ4，係 將靜電力用電壓設定在v，但也可在期間T1 — Τ4之任一時 點，將靜電力用電壓設定在V。同樣地，冑述例中，在時 間Τ8與時間Τ10間之時間Τ9，係將靜電力用電壓設定在ν ，但也可在期間Τ6—Τ9之任一時點，將靜電力用電壓設定 在V。 本實施形態之光開關陣列i，係具有複數個作為前述 單位元件之第11圖第〜15圖所示之光開關，此等光開關 係配置成2維矩陣。又，本實施形態之光開關陣列中，為 了用少條數之控制線來實現對此等各個光開關實現前述控 制，係搭載包含複數個開關元件之第17圖所示之電路。 34 200404174 第17圖係顯示本實施形態之光開關陣列之電路圖。第i 7 圖中，與第7圖中之元件相同或對應之元件，係附加相同 符號，並省略重複之說明。 第17圖所示電路與第7圖所示電路之相異處，係追加 了電流控制開關MC4、及供應前述電流_ !之電流源！ 2。 電流控制開關MC4之一端係連接在列選擇開關Mmnd之另一 端，電流控制開關MC4之另一端係連接在電流源12之一端 ，電流源12之另一端係接地。電流控制開關MC4之閘極係 連接在端子C4。 , 又’第Π时’ m行n列之光開關之電容器、—係相 當於並聯第2電極23a與第i電極（基板u)所形成之電容 器、第2電極23b與第1電極（基板⑴所形成之電容器、 第2電極23a與上側電極部41(第3電極部）所形成之電容 器、及第2電極23b與上側電極部41所形成之電容器之合 成電容。 其次，第18圖係顯示對各端子（V1、V2、V3、耵、犯 、H3、Cl、C2、C3、C4)施加電壓之時序圖例。第18圖中 ’時間ti以前’係將所有光開關之電容器偏壓在箱位 電塵VC之電壓更新期間。因此，該期間中，端子⑺、V2 、V3 H1 /2、H3)全部為高位準，所有列選擇開關(Mmnb Mmnd)及订選擇開關（Mmna、動⑻成為導通狀態。又，該 期間中，端子π係高位準，端子C2係低位準，電壓控制 開關ΜΠ係導通狀態，電壓控制開關MC2為不導通狀態。 此外’鈿子(。3、C4)為低位準，電流控制開關⑽3、関 35 200404174 為不導通狀態。在電壓更新期間，反射 μ ^ Ί夂射鏡12係被保持在 上側位置及下側位置之任一位置。 本實施形態中，施加至端子(n、V2、V3、Hi、H2、H3 係:二C2:C3、C4)之訊號(電壓)，係從外部控制電路(其 ’、田於第1圖中之外部控制電路6 )作Λ妖… ΛΙ 給㈧作為控制訊號來供應 。此外部控制電路，與第丨圖中 ^ , Γ σ丨控制電路6同樣的 置係根據光程切換狀態指令訊號，檢測應從現在位 =大…之光開關，針對！個個應變更之光開關，分別 依序設定狀態變更期間。在沒有應從現在 =關時，即設定前述„更新期間。又，當設：：數個 交更/月門時（也就疋§兄，應從現在位置 開關數為2個以上瞎、，會叮士 * ^ 、 亦可在各狀態變更期間之間設定 電壓更新期間，亦可不設定 現在位置狀態變更之光門…广間。例如’在應從 文尺之先開關數為3個以上時，可設定狀能 變更期間，更新期間—狀態變更期間，更新_ —狀悲變更期間，也可連續設定狀態變更期間。然後，在 所設定之各狀態變更期 又期間，針對對應之光開關，為 所指令之光程狀態，來會e ^ 术實現別述第6圖所示之控制，而供 應施力:至端子(V1、V2、V3、H1、H2、H3、C1、C2、C3: C 4 )之自fL 5虎。又，者妙+ _ 陣列丨。 μ亦可將外部控制電路6搭載在光開關 第Μ圖，係藉由外部控制電路6，來設定電壓更新期 間1列之光開關之狀態變更期間—電壓更新期間之 例。苐18圖之例中 . ’在時間tl以前之電壓更新期間，反 36 200404174 射鏡12被保持在上側位置及下側位置之任—位置。在時 間ti，針對丨行1列之光開關，開始狀態變更期間，端子 〇2、乂3、112、113)係設定在低位準，電衮哭〜1 %分的U 1以外之電 容器被分離。其次，在時間t3, C2被設定在高位準原本 充電在C11之電荷放電，靜電力用電壓成為零。藉此，靜 電力消失，反射鏡12移動到第12圖及第13圖所示之中立 位置。其次’ #時間t4’端子C2成為低位準後，在時間 5 ^子C 3成為向位準。在線圈l 11中，電流+ I、、宁動 當移動方向相反時，將C4設定在高位準來取代C3，電流 一 I流動。其次，在時間t6 ’端子C1成為高位準，將電容 器C11再度充電到箝位電壓vc，藉此進行箝位。其次，在 時間17，將C3設定在低位準，來截止線圈[丨丨之電流。 然後’在時間t8 ’結束該狀態變更期間，成為電壓更新期 間。 又，本實施形態之光開關陣列，基本上，能與前述第 1實施形態之光開關陣列丨同樣製造。本實施形態中，由 於附加了上側電極部41，故在進行犧牲層（相當於可動板 21與上部電極部41間之間隔)之形成後，適當進行形成上 部電極部41等之變更即可。 前述各實施形態中，若係在電極部間施加高電壓的話 ’則必須提高帛8圖中之M0S電晶體之耐壓。但是，耐壓 回之MOS f晶體之平面尺寸變大，晶片之小型化將變得困 難。相對於此’則述各實施形態中，由於不必施加高電壓 在電極部間，故能使用平面尺寸小之_ t晶體，就此點 37 200404174 來看，亦能謀求小型化。 —以上，針對本發明之各實施形態作了說明，但本發明 之範圍並不限定在此等實施形態。 例如，前述各實施形態係將複數個光開關配置成2維 狀之光開關陣列之例，但本發明也可僅有1個光開關。又 ，則述各實施形態係將本發明之微致動器應用在光開關之 例’但不限定在該用途。 本發明之微致動器、微致動器裝置，例如，能使用在 驅動藉由微機械加工所製造之裝置等微小構造之裝置。本鲁 發明之光開關及光開關陣列，例如，能使用在光通訊等方 面。 【圖式簡單說明】 (一）圖式部份 第1圖’係顯示具備本發明第1實施形態之光開關陣 列之光開關糸統例的概略構成圖。 第2圖，係顯示構成第1圖中之光開關陣列之一個光 開關的概略俯視圖。 0 第3圖，係沿第2圖中之XI ~ χ2線的概略截面圖。 第4圖，係沿第2圖中之Y1 — γ 2線的概略截面圖。 第5圖，係對應第3圖的概略截面圖。 第6圖’係顯示構成第1圖中之光開關陣列之一個光 開關之羅倫茲力用電流與靜電力用電壓與反射鏡位置之時 間變化關係的時序圖。 第7圖’係顯示第1圖中之光開關陣列的電路圖。 38 圖 係顯示供應至第7圖中各端子之訊號的時序 楚 rv 第1圖中之光開關陣列之 第1圖中之光開關陣列之 9圖，係以示意方式顯示 氣程的概略截面圖。 第10圖，係以示意方式顯示 另其他各製程的概略截面圖。 第11圖’係顯不構成本發明第2實施形態之光開關陣 列之一個光開關的概略俯視圖。SiO2 film (32, 36). Thus, the optical switch array i of this embodiment is completed. [Second Embodiment] Fig. 11 is a schematic plan view showing one optical switch of the unit of the optical switch in the second embodiment of the present invention. In figure u, the upper electrode Qiu ^ should have been displayed as a solid line 'but for ease of understanding, it is shown with a dashed line: 28 200404174 Figures, and Λ are schematic cross-sectional views taken along line X3-X4 in Figure 11. The schematic cross-sections of 图 3—Υ4, · in u should be in the 11th figure. The “picture” is a cross-sectional view .: A schematic cross-sectional view showing that the mirror 12 is held on the upper side of the skin companion. The diagram corresponding to FIG. 12 is a schematic cross-sectional view showing the state of the mirror d. Also, FIG. 12 Fig. 13 is the same as Fig. 4 above, showing that the electrostatic force and the Lorentz force do not act on the Kori-ji Temple, which is located at the position of the elastic force (restoring force) by the flexures (27a, 27b). In this embodiment, this position is referred to as a neutral position. In FIGS. 11 to 15, the same or corresponding elements as those in FIGS. 帛 J to 5 are denoted by the same reference numerals, and repeated descriptions are omitted. / This implementation The optical switch array of the form is used in the optical switch system shown in Fig. 丨 and can be used to replace the optical switch array i. The optical switch array of this embodiment is different from the optical switch array i in Fig. 1 In the optical switch as a unit element, an upper electrode portion (third electrode portion) 41 disposed above the movable plate 21 is added. ^ The upper electrode portion 41 is formed using a polycrystalline silicon material. Figure 11 ~ In Fig. 15, 42a and 42b are upper electrode anchors, and 43a and 43b are tables. As shown in the ascending part, 44 is a through hole formed in the central part of the upper electrode part 41. The upper electrode part 41 is integrally formed with the ascending parts (43a, 4310 and the upper electrode cymbals (42a, 42b), and penetrates the ascending part) The upper part (43a, 43) and the upper electrode anchors (42a, 42b) (in this order) are mechanically connected to the peripheral part of the recessed part 13 of the substrate u. As described above, since the upper electrode part 41 is fixed to the substrate 1, The upper electrode portion 41 constitutes a fixed portion together with the substrate. In this embodiment, the electrode portions (23a, 23b) of the movable plate 21 can not only 29 200404174: at first, an electrostatic force is generated between the electrode portion (the substrate ⑴) and the! The second electrode 邛 'can also be used as a 4-electrode section with the upper electrode section (between the third electrode section = = the electrostatic force 帛. However, this dual-use is not performed, and for example: ° + 板 21 中' 在A metal film serving as the fourth electrode portion may be formed on the insulating film 26, and an insulating film may be formed on the insulating film 26. In this embodiment, the movable plate 21 can be positioned at the upper side (the second position, see FIG. 14). , The movable plate moves from the neutral position to the upper side and abuts on The position of the side electrode portion 41) and the lower position (the ^ position, refer to 苐 15), which are the movable beauty 91, the warehouse λ y * 1 j, and the substrate 21 enters the recess 13 of the substrate u and abuts on the bottom thereof. Position). At the upper position shown in FIG. 14, the distance between the 帛 2 electrode section 、 a, _ of the movable plate 21 and the substrate 11 as the 帛 upper electrode section becomes larger, and the electrostatic force generated therebetween decreases. Or disappearing 'the gap between the second electrode portions ⑽, 23b) of the movable plate 21 and the upper electrode portion (third electrode portion) 4i becomes narrower', the electrostatic force generated therebetween increases. On the other hand, in the 15th The lower position shown in the figure is the movable plate. The distance between the second electrode portion (23a, 23b) and the substrate u as the i-th electrode portion is narrowed. The electrostatic force generated between the two increases. The distance between the second electrode portion (23a, 23b) and the upper electrode portion (third electrode portion) 41 increases, and the electrostatic force generated between the two decreases or disappears. In this embodiment, the 'i-th electrode portion (the substrate ⑴ and the upper electrode portion 41 which is the third electrode portion are electrically connected in common. With this, the second electrode portion (23a, 23b) of the movable plate is used as a reference, 2m second electrode portion (23a, 23b) ㈣1 electrode portion (between the substrate ιυ and the second electrode portion ⑵a, 23b of the movable plate) and the upper electrode 30 200404174 portion 41 which is the third electrode portion, respectively, at the same time, respectively The same voltage is applied. However, the first electrode (substrate 11) is not electrically connected to the upper electrode portion 41 as the third electrode portion, and the second electrode portion (23a, 23b) of the movable plate 21 and A voltage may be independently applied between the j-th electrode portion (substrate 11), and between the second electrode portion (23b) of the movable plate 21 and the upper electrode portion 41 as the third electrode portion. In the structure of the optical switch shown in Figs. 11 to 15, a micro-actuator for driving the mirror ^ is formed by a configuration other than the mirror 12. Next, in this embodiment, focusing on one optical switch, an example of the control method and the operation of the optical switch by the control method will be described with reference to FIG. 16. FIG. 16 shows a current (hereinafter referred to as “the Lorentz force current”) flowing through the coil layer 25 of one optical switch to cause a Lorentz force, and the first electrode portion (substrate) of the optical switch u) Between the second electrode portion (23a, 23b) of the movable plate 21 and the second electrode portion (23a, 23b) of the movable plate 21 of the optical switch and the upper electrode portion (third electrode portion), respectively Timing chart of the relationship between the same electrostatic dust caused by the electrostatic force (hereinafter referred to as "electrostatic force φ voltage") and the position of the mirror 12 of the optical switch (that is, the position of the movable plate M) . # -Start 'The Lorentz force current is #, and the electrostatic force voltage is V, wrongly caused by the electrostatic force between the electrode portions (23a, 23b) of the movable plate 21 and the upper electrode portion 41' 14 'is shown in the upper position. At this time, the voltage is set to v so that the electrostatic force between the electrode portions (23a, 23b) and the upper electrode portion 41 is stronger than that of the flexure portions (27a, 27b). Here, the 200404174 incident light is reflected by the reflecting mirror 12 and, as shown in Fig. 14, the rear light travels to the front side of the paper. " In the temple gate 111, control of switching the position of the mirror 12 to the lower position shown in Fig. 15 is started. That is, in time ", the voltage for electrostatic force is set to zero. 苴 纟 士 其 、 纟. As a result, the mirror 12 is based on the elasticity of the flexures (27a, 27b), dream aa, old, one ping The knife hurriedly returned to the neutral position shown in Figs. I 2 and u. Then, at time T2 Φ, face shake / person μ 罗 1Z, the current of the Loren bismuth force was set to + I. Here '+ I makes the coil layer 25 ^ technique & μ / π The eight-country calendar 仏 produces a current that is stronger than the flexures (27a, 27b) and steals downward force. Mirror I2, by which The Lenz force gradually decreases, and the movable plate 21 abuts on the substrate 丨 T3 stops and is held at the lower position shown in Fig. 15. Here, the mirror i 2 is not caused by the Lorentz force. Continue to maintain the lower position, but at time T4, set the voltage for electrostatic force to "moxibustion, and at time T5, set the Lorentz force current to zero. Here, the voltage v is the same as the previous value, but when When the mirror 12 & is in the lower position, it is set to generate a voltage that generates a stronger electrostatic force than the flexure (27a, 27b). During the period τ3-τ4, Lenz force keeps the mirror 12 in the lower position. During the period T4-T5, the mirror 12 is kept in the lower position by Lorentz force and electrostatic force. After time T5, the mirror is held by the electrostatic force only 2 Hold the lower position. The period T3-T5 is the transition period of the so-called underside retention that changes the force of holding the mirror 12 in the lower position from Lorentz force to electrostatic force. After period T5, it is the so-called lower side. The period during which the side remains stable. 32 200404174 While the mirror 12 is held in the lower position, as shown in Fig. Π, "the incident light is not reflected by the mirror 12 but passes directly into the emitted light." Then, at time t6, it starts Control to switch the position of the mirror 12 to the upper position not shown in the figure. That is, at time T6, the electrostatic force voltage is set to zero. As a result, the reflecting mirror 12 quickly returns to the upright positions shown in Figs. 12 and 12 by the elastic force of the flexures (27a, 27b). Then, at time T7, the Lorentz force current is set to one. Here, —Η is the current that causes the coil | 25 to be stronger than the elastic force of the flexures (27a, 27b) and upward. By this, the Lorentz force gradually rises, and the movable plate 21 stops at the time T8 when the movable plate 21 is connected to the upper electrode portion 41, and remains at the upper position shown in FIG. Here, instead of keeping the mirror 12 in the upper position by Lorentz force, the electrostatic force is set to W at time T9, and the Lorentz force current is set to zero at time no '. In the period $ Τ8_τ9, the mirror 12 is kept in the upper position only by Lorentz force. During the period " ο, the mirror 12 is in the upper position by Lorentz force and electrostatic force. After time T1G, Only the electrostatic mirror will be used! It is held in the upper position. The period T9 to T1G is a period of the so-called upper holding transition period during which the force holding the mirror 12 in the upper position is switched from the Lorentz force to electrostatic force. As described above, when the distance between the second electrode portion (23a, 23b) of the movable plate 21 and the substrate UU i is large, the size does not depend on the position of the mirror 12 (position of the movable plate 21). ) To resist the elastic force of the flexures (27a, 27b) to move the reflector 12 to the lower position. In addition, the distance between the second electrode portion ⑵a and the second electrode portion of the movable plate 21 and the substrate (the first electrode portion) is reduced, and the stable position of the lower side is maintained, and the second electrode portion of the movable plate 21 ⑵a, 23b) and the upper electrode portion 41 (the third electrode portion) have a smaller interval, and the upper position is maintained in a stable state. Since the reflector is held in the domain position only by electrostatic force, power consumption can be reduced. When the distance between the second electrode portions ⑵a and 23b of the movable plate 21 and the upper electrode portion η (the third electrode portion ㈣) is large, the magnitude of the Lorentz force does not depend on the position of the reflector 12 to resist the scratch. The elastic force of the curved portions (27a, 27b) moves the mirror 12 to the upper position. Therefore, it is not necessary to apply a directional voltage for increasing the electrostatic force and does not affect the miniaturization, that is, the movable range of the movable plate 2m4 can be expanded. In the foregoing example, At time τ4 between time T3 and time T5, the voltage for electrostatic force is set to v, but it is also possible to set the voltage for electrostatic force to V at any point in the period T1 to T4. Similarly, the example will be described In the time T9 between time T8 and time T10, the voltage for electrostatic force is set to ν, but the voltage for electrostatic force can also be set to V at any point in the period T6-T9. Light of this embodiment The switch array i has a plurality of optical switches as shown in the eleventh to fifteenth figures of the aforementioned unit element, and these light-on relationships are arranged in a two-dimensional matrix. In addition, in the optical switch array of this embodiment, A small number of control lines to achieve these individual light openings To realize the aforementioned control, it is equipped with the circuit shown in Fig. 17 including a plurality of switching elements. 34 200404174 Fig. 17 is a circuit diagram showing the optical switch array of this embodiment. The elements in Fig. I 7 and Fig. 7 The same or corresponding components are denoted by the same symbols and repeated descriptions are omitted. The difference between the circuit shown in Figure 17 and the circuit shown in Figure 7 is that a current control switch MC4 is added and the aforementioned current is supplied. Current source! 2. One end of the current control switch MC4 is connected to the other end of the column selection switch Mmnd, the other end of the current control switch MC4 is connected to one end of the current source 12, and the other end of the current source 12 is grounded. The current control switch The gate of MC4 is connected to the terminal C4. Also, the capacitors of the optical switches of m rows and n columns in the "th-th-period" are equivalent to the capacitor formed by connecting the second electrode 23a and the i-th electrode (substrate u) in parallel. Capacitance formed by the second electrode 23b and the first electrode (the capacitor formed by the substrate ⑴), capacitor formed by the second electrode 23a and the upper electrode portion 41 (the third electrode portion), and capacitor formed by the second electrode 23b and the upper electrode portion 41 Close Secondly, Fig. 18 shows a timing diagram of applying voltage to each terminal (V1, V2, V3, 耵, criminal, H3, Cl, C2, C3, C4). Fig. 18 shows the time before "time ti". The capacitors of all the optical switches are biased during the voltage update period of the box-type electric dust VC. Therefore, during this period, the terminals ⑺, V2, V3 H1 / 2, H3) are all high level, and all column selection switches (Mmnb Mmnd) And the selection switch (Mmna, every turn into a conductive state. In this period, the terminal π is a high level, the terminal C2 is a low level, the voltage control switch MΠ is a conductive state, and the voltage control switch MC2 is a non-conductive state. In addition, 钿 钿 (.3, C4) is low level, and current control switch ⑽3, OFF 35 200404174 is non-conducting state. During the voltage update period, the reflection mirror 12 is held at any one of the upper position and the lower position. In this embodiment, the signals (voltages) applied to the terminals (n, V2, V3, Hi, H2, H3: two C2: C3, C4) are from an external control circuit (its', Tian in Figure 1) The external control circuit 6) supplies Λ 妖 ... ΛΙ is supplied as a control signal. The external control circuit is the same as the control circuit 6 in the figure ^, Γ σ 丨 according to the optical path switching status command signal. The detection should be from the current position = large ... Each of the optical switches that should be changed sets the state change period in order. When there is no need to switch from now = off, the aforementioned „renewal period is set. Also, when setting :: several handovers / monthly gates (that is, 疋 § brother, the number of switches from the current position should be more than 2 blind, will bite Taxi * ^, It is also possible to set the voltage update period between each state change period, or it is not necessary to set the light gate of the current position state change ... Guangma. For example, 'when the number of switches that should be changed from the ruler to 3 or more, you can set The status change period, update period—state change period, update_ — status change period, can also continuously set the state change period. Then, in each set state change period and period, the corresponding optical switch is the command In the optical path state, Laihui e ^ technology realizes the control shown in Figure 6 of the other description, and supplies force: to the terminals (V1, V2, V3, H1, H2, H3, C1, C2, C3: C 4) Since the fL 5 tiger. Also, the + + array 丨 μ can also be equipped with the external control circuit 6 in Figure M of the optical switch, the external control circuit 6 is used to set the voltage of one row of optical switches during the voltage update period State change period—an example of a voltage update period. In the voltage update period before time t1, the anti-2004200404174 lens 12 is held at any of the upper position and the lower position. At time ti, the state change period is started for the optical switches in row 1 and row 1, Terminals 02, 乂 3, 112, and 113) are set to the low level, and capacitors other than U 1 are separated by 1%. Secondly, at time t3, C2 is set to the high level and was originally charged at C11. The charge is discharged, and the electrostatic force voltage becomes zero. As a result, the electrostatic force disappears, and the mirror 12 moves to the neutral position shown in Figs. 12 and 13. Secondly, after the '# 时间 t4' terminal C2 becomes a low level, in time 5 ^ C 3 becomes the level. In the coil 11, when the current + I, and when the movement direction is opposite, C4 is set to a high level instead of C3, and the current-I flows. Second, at time t6 ' The terminal C1 becomes a high level, and the capacitor C11 is charged again to the clamping voltage vc, thereby performing clamping. Next, at time 17, C3 is set to a low level to cut off the current of the coil [丨 丨. Then, at time t8 'End this state change period and become During the refresh period, the optical switch array of this embodiment can be basically manufactured in the same manner as the optical switch array of the first embodiment. In this embodiment, since the upper electrode portion 41 is added, a sacrificial layer is being formed. After the formation (equivalent to the interval between the movable plate 21 and the upper electrode portion 41), the formation of the upper electrode portion 41 and the like may be appropriately changed. In the foregoing embodiments, if a high voltage is applied between the electrode portions, then It is necessary to increase the withstand voltage of the M0S transistor shown in Fig. 8. However, as the planar size of the MOS f crystal withstand voltage increases, the miniaturization of the chip will become difficult. In contrast, in each of the embodiments described above, It is not necessary to apply a high voltage between the electrode portions, so a _t crystal with a small plane size can be used. From this point 37 200404174, miniaturization can also be achieved. -In the above, the embodiments of the present invention have been described, but the scope of the present invention is not limited to these embodiments. For example, the foregoing embodiments are examples in which a plurality of optical switches are arranged in a two-dimensional optical switch array, but the present invention may have only one optical switch. In addition, each of the embodiments described above is an example of applying the microactuator of the present invention to an optical switch ', but it is not limited to this application. The micro-actuator and the micro-actuator device of the present invention can be used, for example, to drive a device having a microstructure such as a device manufactured by micromachining. The optical switch and optical switch array invented by Benlu can be used in, for example, optical communication. [Brief description of the drawings] (I) Schematic part Fig. 1 'is a schematic configuration diagram showing an example of an optical switch system including an optical switch array according to the first embodiment of the present invention. Fig. 2 is a schematic plan view showing one optical switch constituting the optical switch array in Fig. 1; 0 Figure 3 is a schematic cross-sectional view taken along the line XI ~ χ2 in Figure 2. Fig. 4 is a schematic cross-sectional view taken along line Y1-γ2 in Fig. 2. FIG. 5 is a schematic cross-sectional view corresponding to FIG. 3. Fig. 6 'is a timing chart showing the relationship between the Lorentz force current and electrostatic force voltage and the position of the mirror of an optical switch constituting the optical switch array of Fig. 1. Fig. 7 'is a circuit diagram showing the optical switch array in Fig. 1; Figure 38 shows the timing of the signals supplied to each terminal in Figure 7. rv Figure 9 shows the optical switch array in Figure 1 Figure 9 shows the optical switch array in a schematic way . Fig. 10 is a schematic cross-sectional view schematically showing other processes. Fig. 11 'is a schematic plan view showing an optical switch which does not constitute the optical switch array of the second embodiment of the present invention.

第12圖，係沿第U圖中之χ3—χ4線的概略截面圖。 第13圖，係沿第丨丨圖中之γ3 一 γ4線的概略截面圖。 第14圖，係對應第12圖的概略截面圖。 第15圖，係對應第12圖的另一概略截面圖。 第1 6圖’係顯示第11圖所示之一個光開關之羅倫茲 力用電流與靜電力用電壓與反射鏡位置之時間變化關係的 時序圖。 第17圖’係顯示本發明第2實施形態之光開關陣列的 電路圖。 泰 第18圖’係顯示供應至第I?圖中各端子之訊號的時 序圖。 (二）元件代表符號 1 光開關陣列 2 光輸入用光纖 3，4 光輸出用光纖 5 磁鐵 39 200404174 5a 磁力線 6 外部控制電路 11， 31 基板 12 反射鏡 13 凹部 21 可動板 22 下側絕緣膜 23a, 23b 第2電極部 24a, 24b 配線圖案 25 線圈層 26 上側絕緣膜 27a, 27b 撓曲部 28a, 28b 在苗部 29a, 29b 配線圖案 32， 36 Si02 膜 33， 35 SiN膜 34 A1膜 37 光阻 38 金屬 41 上側電極部 42a， 42b 上側電極錫部 43a， 43b 上昇部 44 貫通孔 Cmn 電容器Fig. 12 is a schematic cross-sectional view taken along the χ3-χ4 line in Fig. U. Fig. 13 is a schematic cross-sectional view taken along line γ3-γ4 in Fig. 丨 丨. FIG. 14 is a schematic cross-sectional view corresponding to FIG. 12. FIG. 15 is another schematic cross-sectional view corresponding to FIG. 12. Fig. 16 'is a timing chart showing the relationship between the Lorentz force current and the electrostatic force voltage and the position of the mirror of the optical switch shown in Fig. 11. Fig. 17 'is a circuit diagram showing an optical switch array according to a second embodiment of the present invention. Figure 18 'is a timing chart showing the signals supplied to the terminals in Figure I ?. (II) Symbols for components 1 Optical switch array 2 Optical input fiber 3, 4 Optical output fiber 5 Magnet 39 200404174 5a Magnetic field line 6 External control circuit 11, 31 Substrate 12 Reflector 13 Recess 21 Movable plate 22 Lower insulating film 23a , 23b 2nd electrode portion 24a, 24b wiring pattern 25 coil layer 26 upper side insulating film 27a, 27b flexure 28a, 28b at seedling portion 29a, 29b wiring pattern 32, 36 Si02 film 33, 35 SiN film 34 A1 film 37 light Resistance 38 metal 41 upper electrode portions 42a, 42b upper electrode tin portions 43a, 43b rising portion 44 through-hole Cmn capacitor

40 20040417440 200404174

Lmn 線圈Lmn coil

Mmnb, Mmnd Mmna, Mmnc MCI, MC2 MC3 VC VI〜V3， HI〜 列選擇開關 行選擇開關 電壓控制開關 電流控制開關 箝位電壓 H3， C1〜C4 端子Mmnb, Mmnd Mmna, Mmnc MCI, MC2 MC3 VC VI ~ V3, HI ~ Column selection switch Row selection switch Voltage control switch Current control switch Clamp voltage H3, C1 ~ C4 terminals

4141

Claims (1)

200404174 拾、申請專利範圍： 1、一種微致動器，其特徵在於·· ;具備固定部、及設置成能相對㈣定部㈣心一 该固定部具有第1電極部； 該可動部，具有能藉由與前述第1電極部間之電戶 :與該第1電極部之間產生靜電力的· 2電極部，盘二 在磁場内藉由通電來產生羅倫茲力的電流路徑。、 2、 如申請專利範圍第】項之微致動 部係由薄膜構成。 3亥可動 3、 如中請專利範圍第i項之微致動器，其中，該w 路徑’係配置成能在使該可動部移動至該靜電 = 1位置的方向產生羅倫兹力。 人之弟 4、 如申請專利範圍第3項之微致動器，复中 部係設置成能在該帛i位置、 動 2位置之間移動，且能產生…讀'力降低或消失的第 。 ㈣纟月匕產生欲復原至該帛2位置之復原力 5、 如申請專利範圍第4項之微致動器，其 ::邛與忒第2電極部係對向配置；該可動部係透過 =之彈性部機械連接於該固定部，以使該可動部位^該 位置時’該第1及第2電極部間之間隔變窄，且在該 變大Ρ ^ ^ ^亥第2位置時’該第1及第2電極部間之間隔 ,该復原力係藉由該彈性部來產生。 6、 如申請專利範圍帛1項之微致動器，其中，該固定 42 200404174 部具有第3電極部，該可動部具有第4電極部，此第*電 極部能藉由與帛3電極部間之電壓，在與該第3電極 間產生靜電力。 7、 如申請專利範圍第6項之微致動器，其中，該第2 電極部係兼用為該第4電極部。 x 8、 如申請專利範圍第6項之微致動器，其中，該電流 路徑，係配置成能在使該可動部分別移動至第丨位置及第 2位置之各方向產生羅倫兹力，·該第1位置係該第丨及第2 電極部間所產生之靜電力增大、 且成乐j及弟4電極部間響 所產生之靜電力降低或消失的位置，該第2位置係該第1 及第2電極部間所產生之靜電力降低或消失、且該第3及 第4電極部間所產生之靜電力增大的位置。 9、 如申請專利範圍第8項之微致動器，其中，該可動 部係設置成產生欲復原至該第i及第2位置間之既定位 的復原力。 10、如申請專利範圍第9項之微致動器，其中，該第200404174 The scope of patent application: 1. A micro-actuator, characterized in that: provided with a fixed part and arranged to be able to be opposed to a fixed part-the fixed part has a first electrode part; the movable part has The two electrodes that can generate electrostatic force between the first electrode portion and the first electrode portion, and the second electrode portion can generate a Lorentz force current path by applying electricity in a magnetic field. 2. The micro-actuating part according to item [Scope of patent application] is composed of a thin film. 3. Hai movable 3. The micro-actuator of item i in the patent application, wherein the w path ′ is configured to generate a Lorentz force in a direction that moves the movable portion to the electrostatic = 1 position. Brother of man 4. If the micro-actuator of item 3 of the scope of patent application, the Fuzhong Department is set to be able to move between the 、 i position and the ， 2 position, and it can produce a reading that the force is reduced or disappeared. The yue dagger generates the restoring force to return to the 帛 2 position. 5. For the micro-actuator of the fourth scope of the patent application, the 邛 and 忒 second electrode parts are oppositely arranged; the movable part is transmitted through The elastic part of = is mechanically connected to the fixed part so that the movable part ^ at this position 'the interval between the first and second electrode parts becomes narrower and it becomes larger when the P ^ ^ 2nd position' The interval between the first and second electrode portions is generated by the elastic portion. 6. For example, the micro-actuator of item 1 of the patent application scope, wherein the fixed 42 200404174 portion has a third electrode portion, the movable portion has a fourth electrode portion, and the * th electrode portion can be connected with the 帛 3 electrode portion by The inter-phase voltage generates an electrostatic force with the third electrode. 7. The micro-actuator according to item 6 of the patent application, wherein the second electrode portion is also used as the fourth electrode portion. x 8. If the micro-actuator of item 6 of the scope of patent application, wherein the current path is configured to generate Lorentz force in each direction of moving the movable part to the first position and the second position, The first position is a position where the electrostatic force generated between the first and second electrode sections increases, and the electrostatic force generated by the sound between Chengle j and the fourth electrode section decreases or disappears, and the second position is a position A position where the electrostatic force generated between the first and second electrode portions is reduced or disappeared, and the electrostatic force generated between the third and fourth electrode portions is increased. 9. The micro-actuator according to item 8 of the scope of patent application, wherein the movable part is arranged to generate a restoring force to return to the existing position between the i-th position and the second position. 10. The micro-actuator according to item 9 of the patent application scope, wherein the 1電極部係在對該可動部之一側，與該第2電極部對向配 置’该第3電極部係在對該可動部之另一側，與該第$ 極部對向配置； ^ 該可動部係透過具有彈性之彈性部機械連接於該固定 邛’以使該可動部位於該第1位置時，該第1及第2電 J心弟1間隔變小且該第3及第4電極部間之第2間 變大， J 而在該可動部位於該第2位置時，該第1間隔變大 且第2間隔變小； 43 200404174 該復原力係藉由該彈性部來產生。 11 種彳政致動器裝置，其特徵在於，具備： 申請專利範圍第1項之微致動器； 磁場產生部’係產生該磁場；以及 才工制。卩，係控制該第丨及第2電極部間之電壓及流過 該電流路徑之電流。 12如申晴專利範圍第11項之微致動器裝置，其中， 該控制部係控制該電壓及該電流，以在該可動部往該第1 位置移動時，係藉由該羅倫茲力或該羅倫茲力及該靜電力 ，來使該可動部向該第1位置移動； ,邊控制部在將該可動部保持在該第丨位置之至少穩定 ’、持狀％下，係控制該電壓以藉由該靜電力將該可動部保 寺在忒第1位置，且控制該電流使其不流動。 3 種微致動器裝置，其特徵在於，具備： 申％專利範圍第6項之微致動器； 石兹場產生部’係產生該磁場；以及 3 控制°卩’係控制該第1及第2電極部間之電壓、該第 及第4電極部間之電壓、及流過該電流路徑之電流。 ^ ^ 14如申請專利範圍第13項之微致動器裝置，其中， 及a’係控制該第1及第2電極部間之電壓 '該第3 在1 /電極部間之電壓、以及流過該電流路徑之電流，以 可動部往該第1位置移動時，係藉由該羅倫茲力，或 Ρ|~ ΐ I J ’士 争:ττι^ Λ、偷兹力及該第1及第2電極部間之靜電力，來使 δ亥可動部移動到該第i位置； 44 第3及:制：’係控制該第1及帛2電極部間之電壓、該 ，以在該可動 =1 第之， ，咬萨由h 位置移動時，係藉由該羅倫兹力 羅倫兹力及該第3及f 4電極部間 使该可動部移動到該第2位置； 玉力 —§亥控制部，在將該可動部保持在該第【位置之至少· 呆持狀態下，係控制該第！及帛2電極部間之電壓以及 :亥第3及第4電極部間之„，以藉由該第i及第2電極 4間之杨電力將該可動部保持在該帛丨位置，且控制該 電流使其不流動； 该控制部，在將該可動部保持在該第2位置之至少穩 定保持狀態下’係控制該第1及第2電極部間之電壓以及 該第3及第4電極部間之電壓，以藉由該第3及第4電極 部間之該靜電力將該可動部保持在該第2位置，且控制該 電流使其不流動。 15、一種光開關，其特徵在於，具備： 申請專利範圍第1項之微致動器；以及 鲁 反射鏡，係設置在該可動部。 1 6、一種光開關陣列，其特徵在於： 具備複數個申請專利範圍第15項之光開關，該複數個 光開關係配置成2維狀。 17、如申請專利範圍第16項之光開關陣列，其中，具 備包含複數個開關元件之電路，該電路係依該複數個光開 關各行之行選擇訊號及該複數個光開關各列之列選擇訊號 45 200404174 ，對所選擇之行及列之光開關，進行該電流及該電壓之控 制。 拾壹、圖式： 如次頁1 electrode portion is disposed on one side of the movable portion and is opposite to the second electrode portion 'the third electrode portion is disposed on the other side of the movable portion and is opposite to the $ pole portion; ^ The movable part is mechanically connected to the fixed frame through an elastic part having elasticity, so that when the movable part is located at the first position, the interval between the first and second electric cores 1 becomes smaller and the third and fourth The second space between the electrode portions becomes larger, and when the movable portion is located at the second position, the first interval becomes larger and the second interval becomes smaller; 43 200404174 The restoring force is generated by the elastic portion. Eleven types of government actuator devices are characterized in that they include: a micro-actuator according to item 1 of the scope of patent application; a magnetic field generating unit 'that generates the magnetic field; and a labor system. That is, the voltage between the first and second electrode portions and the current flowing through the current path are controlled. 12 The micro-actuator device according to item 11 of Shen Qing's patent scope, wherein the control unit controls the voltage and the current so that when the movable unit moves to the first position, the Lorentz force is used. Or the Lorentz force and the electrostatic force to move the movable part to the first position; and the edge control part controls under the condition that the movable part is kept at least stable in the first position and the holding state is%. The voltage is used to hold the movable part at the first position by the electrostatic force, and the current is controlled so as not to flow. Three types of micro-actuator devices are characterized in that they include: the micro-actuator of claim 6 of the patent scope; the zizi field generating unit 'generates the magnetic field; and 3 control ° 卩' controls the first and A voltage between the second electrode portions, a voltage between the first and fourth electrode portions, and a current flowing through the current path. ^ ^ 14 The micro-actuator device according to item 13 of the scope of patent application, wherein and a 'control the voltage between the first and second electrode portions, and the third voltage between 1 / electrode portion, and the current When the current passing through the current path moves to the first position with the movable part, the Lorentz force, or P | ~ ΐ IJ 'Shi Zheng: ττι ^ Λ, the stealing force, and the first and the first The electrostatic force between the 2 electrode parts moves the δ11 movable part to the i-th position; 44 The third and the: system: 'system controls the voltage between the first and 帛 2 electrode parts, the, so that in the movable = 1 First, when the bite moves from the h position, the movable part is moved to the second position by the Lorentz force and the Lorentz force and between the 3 and f 4 electrode parts; Yuli—§ The Hai control unit controls the mobile unit while keeping the movable unit at least at the [position]. And the voltage between the 2nd electrode part and the 3rd and 4th electrode part, so that the movable part is maintained at the position by the Yang electric power between the ith and the second electrode 4 and controlled The current does not flow; the control section 'controls the voltage between the first and second electrode sections and the third and fourth electrodes in an at least stable holding state where the movable section is held in the second position. The voltage between the parts is to keep the movable part in the second position by the electrostatic force between the third and fourth electrode parts, and to control the current so as not to flow. 15. An optical switch, characterized in that With: microactuator of the scope of patent application No. 1; and Lu mirror, which is installed in the movable part. 1 6. An optical switch array, characterized by: having a plurality of light of scope of patent application No. 15 Switch, the plurality of optical opening relationships are arranged in a two-dimensional shape. 17. The optical switch array according to item 16 of the scope of patent application, which includes a circuit including a plurality of switching elements, and the circuit is based on the plurality of optical switches. Line selection signal and the plurality of lights Each column of the column selecting signal off 45 200 404 174, of the selected rows and columns of the optical switch, for controlling the current and the voltage pickup One, drawings: Page summarized as follows 4646