TW200402756A - Manufacturing method of semiconductor device, semiconductor device and liquid crystal display apparatus - Google Patents

Abstract

A kind of manufacturing method of semiconductor device, which is capable of reducing the manufacturing steps and manufacturing cost, and the semiconductor device suitable for the method are provided in the present invention. On the substrate 1, the gate 2, the gate insulation film 3, the semiconductor film 4, the ohmic contact layer 5, the source 6, the drain 7 and the passivation film 8 are formed. Then, a bottom layer film 9 having hole 9a is formed such that the bottom layer film 9 is used as the etching mask film to etch the passivation film 8. Through the etching step, the hole 8a contacting the hole 9a of the bottom layer film 9 is continuously formed on the passivation film 8 so as to expose the drain 7. After etching the passivation film 8, through the hole 9a of the bottom layer film 9 and the hole 8a of the passivation film 8, the reflection electrode 10 connected to the drain 7 is formed.

Description

200402756 玖、發明說明： 【發明所屬之技術領域】 本發明係關於具有反射電極之半導體裝置之製造方法、 半導體裝置及液晶顯示裝置。 【先前技術】 由先前’於反射式液晶顯示裝置或半穿透式液晶顯示裝 置等之，將外部光反射顯示影像之液晶顯示裝置，於每像 素’具備反射外部光之反射電極。於如此之液晶顯示裝置， 以提高光的使用效率為目的，於反射電極表面具備有多數 的凹部或凸部。再者，該反射電極，為達成將由TFT供給之 電壓施加在液晶層的角色連接於該TFT。如此之反射電極， 經由例如以下之步驟形成。 首先’於基板上，形成具有閘極、源極、及汲極之TFT， 且形成覆蓋該TFT之絕緣膜。其次，以於該絕緣膜形成為連 接TFT之汲極與反射電極之接觸孔的方式，藉由微影步驟將 Μ絕緣膜圖案化。其後，於該絕緣膜表面，塗布反射電極 心辰層膜材料之感光性樹脂，藉由將該塗布之感光性樹脂 圖案化，形成反射電極之底層膜。於如此地形成之底層膜 表面’經由形成於絕緣膜之接觸孔，形成連接於汲極之反 射電極。 於上述之方法’每進行絕緣膜的圖案化步驟，與圖案化 感光性树脂之步驟，有必要進行曝光及顯影，有增加製造 步焉4^數及製造成本的問題。 【發明内容】 83420 200402756 以提供謀求減少製造步騾 造方法，及應用該方法之 本發明係有鑒於上述之情形， 數及製造成本之半導體裝置之製 半導體裝置為目的。 J =上述目的之本發明之半導體裝置之製造方法，其 ':.於基板上具備：電晶體，其具有閘極、源極、 2杠，與反射電極，其連接m極之半導體裝置之 u方法，其特徵在於具備：於上述基板上形成上述源極 及上m之步驟；於形成上述源極及上述汲極之基板上 形成第1絕緣膜之㈣；於形成上述第m緣膜之基板上形 成為上述反射私極之底層膜，於對應上述汲極之位置具有 第1孔且於表面具有多數的凹部或凸部之底層膜之步驟;、於 對應於上4第1絕緣膜之上述沒極之位置，以形成連續地接 者於上述第1孔的第i連通孔的方式，將上述底層膜作為姓 刻掩膜將上述第丨絕緣膜蝕刻之步驟；及於具有形成上述第 1連通孔之上述第1絕緣膜之上述基板上形成為覆蓋上述底 層膜之表面之一部分之反射電極，通過上述第丨孔及上述第 1連通孔連接上述汲極之上述反射電極之步騾。 反射笔極之底層膜’於其表面具備多數之凹部或凸部。 因此，藉由將反射電極形成於該底層膜，該反射電極仿底 層膜之表面可具有多數之凹部或凸部。再者，該底層膜， 亦用於作為形成第1絕緣膜之第1連通孔之蝕刻掩膜。因 此’形成第1絕緣膜後，於形成底層膜之前，不需為於該第 1系巴緣膜形成第1連通孔之專用之光阻步驟，可謀求製造步 驟數及製造成本的減少。 200402756 於此’本發明之半導體裝置之製造方法係，於上述蚀刻 步驟，使上述第i絕緣膜之上述之第1連通孔之内壁面對上 述基板傾斜的方式，將上述第1絕緣膜錐形蝕刻之步驟為 佳。 藉由進行錐形蝕刻，可容易地提高反射電極於第丨連通孔 内之階梯覆蓋。 於此，本發明之半導體裝置之製造方法，於進行上述錐 形姓刻的步驟，使用混合氣體，其包含：姓刻氣體，其含 有具有氟之碳化氫系之氣體；與載流氣體，將上述第1絕緣 膜錐形蝕刻為佳。 藉由於蝕刻氣體含有具有氟之碳化氫系氣體，可容易地 控制形成於第1絕緣膜之第1連通孔之内壁之錐角。又，藉 由於此合氣體中混合載流氣體，可將底層膜之蝕刻速度相 對於第1絕緣膜之蝕刻速度充分地慢。因此，可將底層膜之 表面形狀 < 變形抑制於最小限度，可使反射電極擁有良好 的反射特性。 又’本發明之半導體裝置之製造方》，於形成上述源極 及汲極<步驟之前，亦可具備於上述基板上形成上述閘極 之步馱，或，於形成上述第丨絕緣膜之步騾之後，於形成上 述辰層膜之步驟之前，於形成上述第⑽緣膜之基板上，具 備形成上述閘極之步驟亦可。 八 藉由具備上述步驟，可製造底閘極型或頂閘極型之電晶 體。 再者，本發明之半導體裝置之製造方法，其具備：於形 83420 200402756 極及上述沒極之步驟之前，於上述基板上，形成 t有導電性之導電性遮膜，具有對應於上述閉極之第砩 部分連接之第2部分之導電性遮膜之步驟;於 7 4電性遮膜之步驟之後，於形成上述源極及上述 ^之步驟之前，料成上述導電性遮膜之基板上形成第2 •、膜《步驟，於形成上述^絕緣膜之步驟之後，形成上 述底層膜之步驟之前，於形成上述第^絕緣膜之基板之上， 办成上述閘極及連接於上述閘極之閑極線之步驟；形成上 述底層膜之步驟，於上述底層膜之對應於上述導電性遮光 2邵分之位置形成第2孔的同時，進-步具有於對應 /上述展層膜之上述閘極線之位置形成第3之孔之步驟；上 U刻H進—步具有於上述第1絕緣膜之，對應於上述 導：㈣膜之第2部分之位置，形成於上述第2之孔連續地 接著的第2連通孔’於±述第2絕緣膜之，對應於上述導電 性遮膜：第2部分之位置，以形成連續地接著於上述第2連 通孔之第3連通孔的方式，將上述底層膜作為蚀刻掩膜，將 上述第1及第2絕緣膜蝕刻之步驟；形成上述反射電極之步 驟，進一步具有通過上述第3之孔、上述第2孔、上述第2連 通孔及上述第3連通孔，形成連接上述導電性遮膜與上述間 極線之導電部之步驟為佳。 '^由/、備上述之步驟，可製造雙閘極型之電晶體。 2 ’本發明之半導體裝置之其他製造方法，其係於基板 八備私日日m，其具備閘極、源極及汲極；導電透光膜， 其連接於上述沒極，且具有導電性；及反射電極，其連接 83420 200402756 於上述導電透光膜，之半導體裝置之製造方法，其特徵在 於具備·於上述基板上形成上述源極及上述汲極之步驟； 於形成上述源極及上述汲極之基板上形成連接於上述汲極 之上述導電透光膜，形成具有於連接於上述汲極之第丨部分 與於上述第1部分連接且延伸於對應於上述汲極及上述源 木之區域以外之區域之第2部分之上述導電透光膜之步 騾；於形成上述導電透光膜之基板上形成第3絕緣膜之步 驟；於形成上述第3絕緣膜之基板上形成為上述反射電極之 底層膜，於對應於上述導電透光膜之第2部分之位置具有第 4孔且於表面具有多數之凹部或凸部之底層膜之步驟；於對 應於上述第3絕緣膜之上述導電透光膜之第2部分之位置， 以开y成連續地接著於第4孔之第4連通孔的方式，將上述底 層膜作為蝕刻掩膜將上述第3絕緣膜蝕刻之步驟；及於具有 形成上述第4連通孔之上述絕緣膜之上述基板上，形成覆蓋 上述底層膜之表面之一部分且通過上述第4孔及上述第4連 通孔連接上述導電透光膜之上述反射電極之步騾。 依據該方法，於形成絕緣膜後，於形成底層膜之前，將 不舄為於忒纟巴緣膜形成第丨之連通孔之專用之光阻步驟，可 謀求製造步驟數及製造成本之減少。 又，本發明之半導體裝置，其特徵在於利用申請專利範 圍第1至7項之任一項之半導體裝置之製造方法製造。 再者本發明之液晶顯示裝置，其特徵在於利用申請專 利範圍第8項之半導體裝置所構成。 【實施方式】 83420 -10- 200402756 以下，說明本發明之實施形態。 圖1為利用本發明之半導體裝置之製造方法之第1實施形 態製造之反射式液晶顯示裝置之一部分剖面圖。 孩液晶顯示裝置，具有··形成TFT50及反射電極1〇等之 TFT基板51 ;與形成彩色滤光片|之彩色滤光片基板。於 薇反射電極ίο之表面設有多數凹部1〇a及凸部1〇b。彩色濾 光片基板52之構造，由於與本實施形態之特徵部分無關， 於圖1，簡化記載。於TFT基板51與彩色爐光片基板52之間 存在有液晶層53。，說明具冑本實施形態之特徵部分 之TFT基板51之製造方法。 f代邪刀 首先，於玻璃基板1上形成TFT5〇 (參照圖2)。 圖2為形成TFT50之玻璃基板i之剖面圖。 孩TFT50係，可藉由於破璃基板1上，形成例如，閘極2、 閘極絕緣膜3、a-Si:H或a.Si:F等之半導體膜4、歐姆接觸層 5、源極6及汲極7以製造。再者，於玻璃基板丨上雖亦有形 成閘極線及源極線，該等之線於圖省略。 於TFT’50之製造後，將該TFT5〇覆蓋的方式將保護膜形成 (參照圖3)。 圖3為形成保護膜8之基板之剖面圖。 於本實施形態，作為保護膜8 (相當於本發明所述第i絕緣 膜），利用氮化矽膜。 再者，存在於保護膜8之下之汲極7，因需與後述之反射 電極10 (參照圖6)連接’有必要減保護膜8形成連接沒極7 與反射電極iG之孔。但是，於本實施㈣，於保護膜8形成 83420 • 11 - 200402756 孔之前，形成為於反射電極10之表面具備多數之凹部1〇a及 凸部10b (參照圖6)先形成底層膜（參照圖4)。 圖4為形成底層膜9之基板之剖面圖。 該底層膜9，於對應於汲極7之位置具有孔9 a (相當於本發 明所述第1孔），再者，於該底層膜9之表面，有具備多數之 凹部9b及凸部9c。為形成如此之底層膜9，例如，於保護膜 8之表面塗布感光性樹脂，於該塗布感光性樹脂之孔％之對 應部分’凹部9b之對應部分，及凸部9c之對應部分相互吸 收相異曝光能量的方式，曝光該塗布之感光性樹脂。藉由 將如此地曝光之感光性樹脂顯影及烘培，如圖4所顯示地， 可將具有孔9a、凹部9b及凸部9c之底層膜9形成。因於底層 膜9之表面設有多數凹部9b及凸部9c ,底層膜9之表面之傾 斜角α將連續地變化。再者，後述之反射電極1〇 (參照圖6)， 由於开J成於如此底層膜9之傾斜角α連續地變化之底層膜9 之表面，反射電極10之反射特性將大大地依存於底層膜9表 面之傾斜角α。因此，藉由改變底層膜9之傾斜角α，可改變 反射電極10之反射特性。該傾斜角α，例如，可藉由改變對 應於塗布感光性樹脂之凹部9b之部分吸收之曝光能量，及/ 或於對應於塗布感光性樹脂之凸部9c之部分吸收之曝光能 1等可容易地改變。為使反射電極1〇具有良好的反射特 性，盡量將底層膜9之傾斜角〇^包含於〇度<〇1<15度的範圍為 佳。於是，於本實施形態，盡量將底層膜9之傾斜角α包含 於〇度<α<15度的範園的方式，形成底層膜9。 再者，具有多數的凹部9b及凸部％之底層膜9之形成方 -12 · 83420 200402756 法，並非限定為上述之方法，例如，於塗布底層膜9之材料 之感光性樹脂之前先形成多數之突起體，以覆蓋該多數之 突起體的方式塗布底層膜9之材料之感光性樹脂亦可。藉由 先形成多數之突起體，底層膜9之材料之感光性樹脂覆蓋該 等突起體之形狀的方式塗布，該結果，可形成於表面具有 多數之凹部及凸部之底層膜。 於形成底層膜9之後，將保護膜8蝕刻（參照圖5)。 圖5為將保護膜8蝕刻後之基板之剖面圖。 由於於底層膜9形成有孔9a，藉由將該底層膜9作為蝕刻 掩膜將保護膜8蝕刻，於該保護膜8，形成連續地接著於底 層膜9之孔9a之孔8a (相當於本發明所述第1連通孔）。藉由 於保護膜8形成孔8 a ’露出沒極7。於本實施形態，藉由利 用含有SF0及CHF3之蝕刻氣體與He等之載流氣體之混合氣 體（SF6:CHF3:He=12.5:12.5:75)之乾蚀刻裝置，將保護膜8姓 刻。藉由於蝕刻氣體不僅SF6亦利用CHF3蝕刻保護膜8 ,可 各易地使孔8a之内壁面8b對基板1之表面傾斜地錐形蝕 刻。作為乾蝕刻裝置，可利用例如，反應性離子蝕刻（rie) 裝置、感應耦合電漿蝕刻（ICP)裝置及高密度電漿蝕刻裝置 等。於本實施形態，内壁面8b之錐形角θ為約7〇度。藉由進 行錐形蝕刻，可提高後述於反射電極1〇 (參照圖6)之孔“内 之階梯覆盍。該錐形角Θ為，例如，可藉由變化氣體之 混合量改變。X，於本實施形H，為可容易地進行保護膜8 之錐形蝕刻，利用CHF3氣體，惟代替CHI氣體，亦可利用 例如C2HF5氣體。 83420 -13- 200402756 如上述地，底層膜9達成作為保護膜8之蝕刻掩膜之角 色’惟該底層膜9，不僅達成作為蝕刻掩膜之角色，亦需達 成為使後述之反射電極10 (參照圖6)擁有良好的反射特性 <底層膜之角色。然而，於蝕刻保護膜8之中若底層膜9亦 被蝕刻則，該底層膜9之表面形狀將變形，於蝕刻保護膜8 之後底層膜9之表面之傾斜角01(參照圖4)之範圍，有與蝕刻 保遵膜8之的之底層膜9之表面之傾斜角範圍大大地偏 離之虞。如此地於底層膜9之表面之傾斜角以之範圍發生偏 離則’即使於該底層膜9之表面形成反射電極1 〇 (參照圖 6),由於有反射電極10之反射特性由所希望之特性大大地 偏離之虞，底層膜9盡量不要被蝕刻為佳。於此，於本實施 形態，將保護膜8,利用蝕刻氣體與載流氣體之混和氣體蝕 刻。藉由於混合氣體含有載流氣體，可使底層膜9之蝕刻速 度相對於保護膜8之蝕刻速度充分地慢，可將完成保護膜8 之蚀刻後之底層膜9之表面形狀，保持與姓刻保護膜8之前 之底層膜9之表面形狀大致相同之形狀。因此，即使蝕刻保 護膜8，可將底層膜9之表面形狀之變形抑制於最低限度， 底層膜9可達成作為使反射電極擁有良好的反射特性之底 層膜之角色。再者，於本實施形態，雖作為載流氣體利用 He，代替He亦可利用例如Ar。 如以上地將保護膜8蝕刻後，將反射電極形成（參照圖〇。 圖6為表示形成反射電極1〇之基板之剖面圖。 該反射電極10係，將例如A1膜等之高反射率之導電膜形 成，藉由圖案化該導電膜以形成。因於反射電極1〇之底層 83420 -14- 200402756 膜9之表面形成有多數之凹部9b及凸部9c (參照圖y，該反 射電極10亦仿底層膜9之表面形狀形成多數之凹部1〇a及凸 部1 Ob，其結果，可得具有良好的反射特性之反射電極1 〇。 如此地，形成TFT基板5 1 (參照圖1)。 於本實施形態，反射電極10之底層膜9，因於其表面具備 多數之凹部9b及凸部9c可達成使反射電極1〇擁有良好的反 射特性的角色的同時，亦可達成作為於保護膜8形成孔8a (參肊圖5)之蚀刻掩膜之角色。因此，於形成保護膜8後，於 形成底層膜9之前，不需為於保護膜8形成孔8a之專用之微 影步騾。於先前的方法則，於形成保護膜8後，於形成底層 膜9之蓟，舄要為於保護膜§形成孔之專用之微影步驟， 但依照本實施形態則，由於不需該微影步驟，可謀求製造 步驟數及製造成本之減少。 其次，說明利用本發明之半導體裝置之製造方法之第2 實施形態所製造之TFT基板。 圖7為利用本發明之半導體裝置之製造方法之第2實施形 態製造之半穿透式液晶顯示裝置之一部分剖面圖。 該液晶顯示裝置，具有TFT5〇〇及反射電極24等所形成之 TFT基板5 1G，與彩色濾、光片等所形成之彩色滤光片基板 520。反射電極24之表面設有多數之凹部24b及凸部24〇。彩 色濾光片基板520之構造，與圖i同樣地，簡化記載。tft 基板510與彩色濾光片基板520之間存在有液晶層53〇。tft 基板510(背面具備有背光虹。以下，對於具備第2實施形 態之特徵部分之TFT基板別之製造方法，邊參照圖7與圖8 83420 -15- 200402756 至圖11說明。 首先，以與邊參照圖2說明之方法同樣的方法，於玻璃基 板1上形成閘極2、閘極絕緣膜3、半導體膜4、歐姆接觸層5、 源極6及汲極7後，形成連接於該汲極7之ITO膜（參照圖8)。 圖8為表示形成ITO膜21之基板之剖面圖。 該ITO膜21 (相當於本發明所述導電透光膜），具有連接於 沒極之第1部分21a，與由該第1部分21 a延伸於閘極絕緣膜3 上之第2部分21b。於形成ITO膜21後，於形成該ITO膜21之 基板上形成保護膜。 圖9為表示形成保護膜22之基板之剖面圖。 存在於保護膜22 (相當於本發明所述第3絕緣膜）之下之 ITO膜21，因有必要與後述之反射電極24 (參照圖7)連接， 於該保護膜8，有必要形成為連接ITO膜21與反射電極24之 孔。然而，於第2實施形態，於保護膜22形成孔之前，先形 成為於反射電極24之表面具備多數之凹部24b及凸部24c (參照圖7)之底層膜（參照圖1〇)。 圖10為形成底層膜23之基板之剖面圖。 該底層膜23，於對應於ITO膜21之第2部分2 lb之位置具有 孔23 a (相當於本發明所述第4孔），再者，於該底層膜23之 表面，具備多數之凹部23b及凸部23c。如此之底層膜23， 可以利用與邊參照圖4說明之方法同樣的方法形成。於底層 膜23形成後，將保護膜22蝕刻（參照圖11)。 圖Π為將保護膜22蚀刻後之基板之剖面圖。 因於底層膜23形成有孔23a，藉由將該底層膜23作為蝕刻 83420 -16 - 200402756 掩膜敍刻保護膜22，於該保護膜22形成連續地接著於於底 層膜23之孔23a之孔22a (相當於本發明所述第4連通孔）。該 保護膜22之蝕刻，可以利用與邊參照圖5說明之方法相同之 方法進行。藉由於保護膜22形成孔22a，ITO膜21之第2部分 2lb路出。於餘刻保護膜22後，如圖7所示藉由形成反射電 極24製造TFT基板510。於該反射電極24，形成有為使由背 光BL (參照圖7)之光通過之孔24a。如此地，藉由於反射電 極24設孔24a，可將TFT基板5 10,用於具備反射式與穿透式 雙方的功能之半穿透式液晶顯示裝置。 於第2貫施形態’反射電極24之底層膜23，因於其表面具 備多數凹部23b及凸部23c可達成為使反射電極24擁有良好 的反射特性之角色的同時，亦達成作為於保護膜22形成孔 22a (參照圖11)之蝕刻掩膜之角色。因此，於形成保護膜^ 後，於形成底層膜23之前，不需為於該保護膜22形成孔22a 之專用之微影步驟，可謀求製造步驟數及製造成本之減少。 再者，於上述第1及第2實施形態，說明對底閘極型之τρτ 基板51及5 10之製造方法，本發明，亦可應用於頂閘極型之 TFT之製造。以下，說明將本發明應用於頂閘極型tft基板 之製造之例。 圖12為利用本發明之半導體裝置之製造方法之第]實施 形態製造之頂閘極型液晶顯示裝置之一部分剖面圖。 該液晶顯示裝置，具有形成有TFT600及反射電極68等之 TFT基板6G1，與形成有彩色濾、光片等之彩色濾光片基板 602忒TFT基板601具有反射電極68，該反射電極68表面設 Η η ι 83420 -17- 200402756 有多數凹部及凸部。彩色濾光片基板602之構造，簡化記 載。TFT基板601與彩色濾光片6〇2之間存在有液晶層6们。 TFT基板601之背面具有背光3[。以下，對TFT基板之製 造方法’邊參照圖12與圖13至圖1 8說明。 首先，如圖13所示，於形成Si〇2膜（無圖示）之玻璃基板6〇 上，形成源極61、汲極62、半導體膜63、及SiN膜64。於此， 源極61及汲極62，雖由1丁〇膜1^1與金屬膜？2之兩層膜所構 成，亦可以單層膜或三層以上之積層膜所形成。作為金屬 膜F2，可用例如，添加微量的鉻（Cr)之鉬（M〇)為主成分之 金屬膜。於SiN膜64形成後，將該SiN膜64覆蓋的方式形成 絕緣膜（參照圖14)。 圖14為形成絕緣膜65之基板之剖面圖。 作為絕緣膜65 (相當於本發明所述第i絕緣膜），可用例如 SiN膜。形成絕緣膜65之後，將閘極形成（參照圖15)。 圖15為形成閘極66之基板之剖面圖。 閘極66，可以例如形成A1膜等金屬膜，藉由將該金屬膜 圖案化以形成。圖案化該金屬膜時，閘極66之外，雖赤形 成有連接於該閘極66之閘極線，惟於圖1 5，省略該間柄綠 之圖示。 再者，存在於絕緣膜65之下之汲極62，有必要與後述之 反射電極68連接（參照圖12及圖18)。因此，於絕緣膜65，有 必要形成為連接汲極62與反射電極68之孔，惟於該第3實施 形態，於閘極66形成後，於絕緣膜65形成孔之前，先形成 為使後述之反射電極68擁有多數之凹部及凸部之底層膜。 ··-、·八 mi 83420 -18- 200402756 圖16為形成底層膜67之基板之剖面圖。 底層膜67，可以與邊參照圖4說明之方法相同之方法形 成。該底層膜67，於對應於汲極62之部分具有孔67a (相當 於本發明所述第1孔），進一步於該底層膜67之表面，設有 多數凹部67b及凸部67c。如此地形成底層膜67後，將絕緣 膜65蝕刻（參照圖17)。 圖17為將絕緣膜65蝕刻後之基板之剖面圖。 該絕緣膜65，將底層膜67作為蝕刻掩膜，以邊參照圖5 說明之方法相同之方法乾蝕刻。藉由該乾蝕刻，可於絕緣 膜65之孔65a (相當於本發明所述第1連通孔）之内壁面 65b，擁有與圖5之内壁面8b同樣的錐形角e。將絕緣膜65蚀 刻後，形成反射電極（參照圖18)。 圖18為表示形成反射電極68之基板之剖面圖。 反射電極68，可以例如形成A1膜，藉由將該A1膜圖案化 以形成。於該反射電極68，形成有為使由背光bl (參照圖 12)之光通過之孔68a。然而，於圖is，因汲極62之1丁〇膜1?1 被金屬膜F2覆蓋，僅於反射電極68設孔68&則，無法將背光 BL之光通過孔68a。因此，形成具有孔68a之反射電極68後， 將金屬膜F2對應於孔68a之部分蝕刻。藉由該蝕刻，如圖12 所示地汲極62之ITO膜F1露出（參照圖12)，背光8乙之光可通 過反射電極68之孔68a。如以上地製造TFT基板6〇1。 於第3實施形態，反射電極68之底層膜之底層膜67，因於 其表面具有多數之凹部67b及凸部67c，可達成使反射電極 崎有良好的反射特性的角色的同時，亦可達成作為於絕 83420 -19- 200402756 緣膜65形成孔65a (參照圖17)之钱刻掩膜之角色。因此，於 形成絕緣膜65後，底層膜67形成前，不需為於該絕緣膜65 形成孔65a之專用之微影步騾。於先前的方法則，於形成絕 緣膜65後，於形成底層膜67之前，需要為於該絕緣膜65形 成孔65a之專用之微影步騾，但依照本實施形態則，由於不 需該微影步驟，可謀求製造步騾數及製造成本之減少。 以下’比較藉由第3實施形態之方法製造之TFT基板6〇1 之反射特性，與採用於形成絕緣膜65後形成底層膜67前利 用專用之微影步驟於絕緣膜65形成孔65a之先前方法所製 造之先前之TFT基板之反射特性。 圖19為表示TFT基板601及先前之TFT基板之反射特性之 標纟會圖。 該標繪圖為表示對TFT基板由一3〇度方向照射外部光時 之反射特性。橫軸表示視野角，縱軸表示反射率。於標繪 圖，標記〇表示由第3實施形態之TFT基板之反射特性，標 記X為表示採用先前之方法製造iTFT基板之反射特性。 由圖19，可知於第3實施形態，維持與由先前之方法之反 射特性大致相同程度之反射特性。因此，可知藉由採用第3 實施形態之方法，可維持反射特性地較先前之方法可減少 製造步騾數及製造成本。 再者，本發明，亦可應用於具有雙閘極構造之tft基板之 製造。以下，說明採用本發明之半導體裝置之製造方法之 第4貫施形怨製造具有雙閘極構造之”丁基板之一例。 圖20為具有雙閘極構造之TFT基板1〇〇之一部分之平面 83420 • 20 - 200402756 圖，圖21為圖20之A-A線之剖面圖，圖22為圖20之B-B線之 剖面圖。 於該TFT基板100，形成有具有孔113a之反射電極113，與 連接導電部114 (相當於本發明所述導電部）。反射電極113 連接於沒極10 5。連接導電部114，如圖2 2所示，係將遮光 膜101與閘極線110電性連接之導電部。以下，將示於圖2〇 至圖22之TFT基板100之製造方法邊參照圖23至圖34說明。 圖23為表示形成遮光膜1〇1之基板1之平面圖，圖24為圖 鲁 23之C-C線之剖面圖。 於基板1上，形成具有導電性之導電性遮膜丨〇 1。該導電 性遮膜101，係可將例如，添加微量的鉻（Cr)之鉬（M〇)為主 成分之金屬膜形成，藉由將該金屬膜圖案化為圖23所示之 形狀以形成。於圖23之導電性遮膜1〇1雖具有略l字形狀， 導電性遮膜101之形狀可適當變更。該導電性遮膜丨〇 1，具 有對應於後述之閘極109 (參照圖29)之第1部分101a與由第 1部分101延伸之第2部分l〇lb。形成遮光膜101後，形成Si〇2 · 膜（參照圖25)。 圖25為表示形成Si〇2膜102之基板之剖面圖。 -200402756 2. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a method for manufacturing a semiconductor device having a reflective electrode, a semiconductor device, and a liquid crystal display device. [Prior art] The liquid crystal display device that reflects the external light and displays an image on a reflective liquid crystal display device or a transflective liquid crystal display device, etc., has a reflective electrode that reflects external light in each pixel. In such a liquid crystal display device, a plurality of concave portions or convex portions are provided on the surface of the reflective electrode for the purpose of improving the use efficiency of light. The reflective electrode is connected to the TFT in order to achieve the role of applying a voltage supplied from the TFT to the liquid crystal layer. Such a reflective electrode is formed through, for example, the following steps. First, a TFT having a gate electrode, a source electrode, and a drain electrode is formed on a substrate, and an insulating film covering the TFT is formed. Next, the M insulating film is patterned by a lithography step in a manner that the insulating film is formed as a contact hole connecting the drain electrode of the TFT and the reflective electrode. Thereafter, a photosensitive resin of a reflective electrode core layer film material is coated on the surface of the insulating film, and the coated photosensitive resin is patterned to form an underlayer film of the reflective electrode. On the surface of the underlying film thus formed ', a reflective electrode connected to the drain electrode is formed through a contact hole formed in the insulating film. In the above method ', each of the step of patterning the insulating film and the step of patterning the photosensitive resin requires exposure and development, which increases the number of manufacturing steps and the manufacturing cost. [Summary of the Invention] 83420 200402756 The purpose of the present invention is to provide a semiconductor device that can reduce the number of manufacturing steps and a method for applying the method. J = method for manufacturing a semiconductor device of the present invention for the above purpose, which includes: on a substrate: a transistor having a gate electrode, a source electrode, two bars, and a reflective electrode, which is connected to the u of the m-pole semiconductor device; The method is characterized by comprising: a step of forming the source and the upper m on the substrate; forming a first insulating film on the substrate on which the source and the drain are formed; and a substrate on which the m-th edge film is formed. A step of forming an underlayer film that is the above-mentioned reflective private electrode, having a first hole at a position corresponding to the above-mentioned drain electrode, and having a large number of concave or convex portions on the surface; and the above corresponding to the first 4 insulating film above The position of the pole is to form the i-th communication hole continuously connected to the first hole, and the step of etching the first insulating film by using the underlying film as a surname mask; and A step of forming a reflective electrode on the substrate of the first insulating film of the communication hole to cover a part of the surface of the underlying film, and connecting the reflective electrode of the drain electrode through the first hole and the first communication hole. The base film 'of the reflective pen has a large number of concave portions or convex portions on its surface. Therefore, by forming a reflective electrode on the underlying film, the surface of the reflective electrode may have a large number of concave portions or convex portions. Furthermore, this underlayer film is also used as an etching mask for forming the first communication hole of the first insulating film. Therefore, after the formation of the first insulating film, before the formation of the underlying film, a dedicated photoresist step for forming the first communication hole in the first series of edge film is not required, and the number of manufacturing steps and the manufacturing cost can be reduced. 200402756 Here, the method of manufacturing a semiconductor device of the present invention is to tape the first insulating film in such a manner that the inner wall of the first communication hole of the i-th insulating film faces the substrate in the above-mentioned etching step. The etching step is preferred. By performing the tapered etching, the step coverage of the reflective electrode in the first communication hole can be easily improved. Here, in the method for manufacturing a semiconductor device of the present invention, in the step of carrying out the above-mentioned conical surname engraving, a mixed gas is used, which includes: a surname engraving gas containing a hydrocarbon-based gas having fluorine; and a carrier gas, The first insulating film is preferably tapered. Since the etching gas contains a hydrocarbon-based gas having fluorine, the taper angle of the inner wall of the first communication hole formed in the first insulating film can be easily controlled. In addition, since the carrier gas is mixed with the mixed gas, the etching rate of the underlying film can be sufficiently slower than the etching rate of the first insulating film. Therefore, the surface shape < deformation of the underlying film can be minimized, and the reflective electrode can have good reflection characteristics. Also, the "manufacturer of the semiconductor device of the present invention" may include a step of forming the gate on the substrate before forming the source and drain < steps, or a step of forming the first insulating film. After the step, the step of forming the gate electrode may be provided on the substrate on which the first edge film is formed before the step of forming the first layer film. 8. By having the above steps, a bottom-gate or top-gate type electric crystal can be manufactured. Furthermore, a method for manufacturing a semiconductor device according to the present invention includes: before the steps of forming the shape of 83420 200402756 electrode and the above-mentioned electrode, forming a conductive shielding film having conductivity at t on the substrate, and corresponding to the closed electrode. The second step is connected to the second step of the conductive mask; after the fourth step of the electrical mask, before the above-mentioned source and the above steps are formed, the conductive mask is formed on the substrate. Forming the second step of the film, after the step of forming the above-mentioned insulating film and before the step of forming the underlying film, on the substrate on which the above-mentioned insulating film is formed, the gate and the gate are connected. The step of forming an underlayer film; the step of forming the above-mentioned underlayer film, while forming a second hole at a position of the above-mentioned underlayer film corresponding to the above-mentioned conductive light-shielding 2 shaw, further-having the above-mentioned corresponding to the above-mentioned stretched film The step of forming the third hole at the position of the gate line; the step of engraving U on the H-step is included in the first insulating film, corresponding to the position of the second part of the guide: the film, and is formed in the second hole. Successively The second communication hole is described in the second insulating film, corresponding to the conductive mask: the position of the second part, so as to form the third communication hole that is continuously connected to the second communication hole. The film serves as an etching mask, and the step of etching the first and second insulating films; the step of forming the reflective electrode further includes passing the third hole, the second hole, the second communication hole, and the third communication. The step of forming a hole to form a conductive portion connecting the conductive mask and the electrode line is preferable. From the above steps, a double-gate transistor can be manufactured. 2 'The other manufacturing method of the semiconductor device of the present invention is based on a substrate, which has a gate electrode, a source electrode, and a drain electrode; a conductive light-transmitting film, which is connected to the above-mentioned electrode and has conductivity. And a reflective electrode, which connects 83420 200402756 to the above-mentioned conductive light-transmitting film, and a method for manufacturing a semiconductor device, characterized in that it comprises: a step of forming the source and the drain on the substrate; and forming the source and the above The conductive light-transmitting film connected to the drain electrode is formed on the substrate of the drain electrode. The conductive light-transmitting film connected to the drain electrode is connected to the first portion and extends to correspond to the drain electrode and the source tree. Steps of the above-mentioned conductive light-transmitting film in the second part of the region other than the region; a step of forming a third insulating film on the substrate on which the conductive light-transmitting film is formed; and forming the reflection on the substrate on which the third insulating film is formed The bottom film of the electrode is a step of a bottom film having a fourth hole at a position corresponding to the second part of the above-mentioned conductive light-transmitting film and having a large number of concave or convex portions on the surface; The position of the second part of the conductive light-transmitting film of the third insulating film is to open the y so as to continuously connect to the fourth communication hole of the fourth hole, and use the bottom film as an etching mask to insulate the third insulation. A step of film etching; and on the substrate having the insulating film forming the fourth communication hole, forming a part of the surface of the underlying film and connecting the conductive light-transmitting film through the fourth hole and the fourth communication hole The steps of the above-mentioned reflective electrode. According to this method, after the insulating film is formed and before the bottom film is formed, a dedicated photoresist step for forming the first communication hole in the edge film can be achieved, and the number of manufacturing steps and the manufacturing cost can be reduced. The semiconductor device of the present invention is characterized by being manufactured by a method for manufacturing a semiconductor device according to any one of claims 1 to 7. Furthermore, the liquid crystal display device of the present invention is characterized by using a semiconductor device according to the eighth patent application. [Embodiment] 83420 -10- 200402756 Hereinafter, an embodiment of the present invention will be described. Fig. 1 is a partial cross-sectional view of a reflective liquid crystal display device manufactured using a first embodiment of a method of manufacturing a semiconductor device according to the present invention. The liquid crystal display device includes a TFT substrate 51 on which a TFT 50 and a reflective electrode 10 are formed, and a color filter substrate on which a color filter is formed. A plurality of concave portions 10a and convex portions 10b are provided on the surface of the Wei reflection electrode ί. The structure of the color filter substrate 52 is irrelevant to the characteristic parts of the present embodiment, and is simplified in FIG. 1 for simplified description. A liquid crystal layer 53 is interposed between the TFT substrate 51 and the color furnace sheet substrate 52. A method for manufacturing the TFT substrate 51 having the characteristic portion of this embodiment will be described. Generation F evil knife First, a TFT 50 is formed on a glass substrate 1 (see FIG. 2). FIG. 2 is a cross-sectional view of a glass substrate i on which the TFT 50 is formed. For the TFT50 series, a gate electrode 2, a gate insulating film 3, a-Si: H or a.Si:F semiconductor film 4, an ohmic contact layer 5, and a source electrode can be formed by breaking the glass substrate 1. 6 and drain 7 to manufacture. In addition, although gate and source lines are also formed on the glass substrate, these lines are omitted in the figure. After the TFT'50 is manufactured, a protective film is formed by covering the TFT 50 (see FIG. 3). FIG. 3 is a cross-sectional view of a substrate on which the protective film 8 is formed. In this embodiment, as the protective film 8 (corresponding to the i-th insulating film according to the present invention), a silicon nitride film is used. Furthermore, since the drain electrode 7 existing under the protective film 8 needs to be connected to a reflective electrode 10 (see Fig. 6) described later, it is necessary to reduce the protective film 8 to form a hole connecting the electrode 7 and the reflective electrode iG. However, in this embodiment, before the protective film 8 forms 83420 • 11-200402756 holes, a plurality of concave portions 10 a and convex portions 10 b (see FIG. 6) are formed on the surface of the reflective electrode 10 (see FIG. 6). Figure 4). FIG. 4 is a cross-sectional view of a substrate on which the underlayer film 9 is formed. The underlayer film 9 has a hole 9 a (corresponding to the first hole in the present invention) at a position corresponding to the drain electrode 7. Furthermore, the surface of the underlayer film 9 has a plurality of concave portions 9b and convex portions 9c. . In order to form such an underlayer film 9, for example, a photosensitive resin is coated on the surface of the protective film 8. The corresponding portion of the hole percentage of the coated photosensitive resin, the corresponding portion of the concave portion 9b, and the corresponding portion of the convex portion 9c absorb each other. Different exposure energy methods are used to expose the coated photosensitive resin. By developing and baking the photosensitive resin thus exposed, as shown in FIG. 4, an underlayer film 9 having holes 9a, concave portions 9b, and convex portions 9c can be formed. Since the surface of the base film 9 is provided with a plurality of concave portions 9b and convex portions 9c, the inclination angle α of the surface of the base film 9 will continuously change. Furthermore, since the reflective electrode 10 (refer to FIG. 6) described later is formed on the surface of the underlying film 9 in which the inclination angle α of the underlying film 9 is continuously changed, the reflection characteristics of the reflecting electrode 10 will greatly depend on the underlying layer. The inclination angle α of the surface of the film 9. Therefore, by changing the inclination angle? Of the underlayer film 9, the reflection characteristics of the reflective electrode 10 can be changed. The tilt angle α can be changed by, for example, changing the exposure energy absorbed by the portion corresponding to the concave portion 9b where the photosensitive resin is applied, and / or the exposure energy 1 absorbed by the portion corresponding to the convex portion 9c where the photosensitive resin is applied. Easily change. In order to make the reflective electrode 10 have good reflection characteristics, it is preferable that the inclination angle of the underlying film 9 is included in a range of 0 ° < 〇1 < 15 ° as much as possible. Therefore, in this embodiment, as far as possible, the inclination angle α of the underlayer film 9 is included in the range of 0 ° < α < 15 ° to form the underlayer film 9. Furthermore, the method for forming the underlayer film 9 having a large number of concave portions 9b and convex portions% is not limited to the above method. For example, a majority is formed before the photosensitive resin of the material of the underlayer film 9 is coated. The protrusions may be a photosensitive resin that is coated with the material of the underlayer film 9 so as to cover the plurality of protrusions. The plurality of protrusions are formed first, and the photosensitive resin of the material of the underlayer film 9 is coated so as to cover the shapes of the protrusions. As a result, the underlayer film having a large number of concave portions and convex portions on the surface can be formed. After the underlayer film 9 is formed, the protective film 8 is etched (see FIG. 5). FIG. 5 is a cross-sectional view of the substrate after the protective film 8 is etched. Since the hole 9a is formed in the underlayer film 9, the protection film 8 is etched by using the underlayer film 9 as an etching mask, and the hole 8a (corresponding to the hole 9a of the underlayer film 9 is formed continuously on the protection film 8 (equivalent to The first communication hole according to the present invention). By forming a hole 8a 'in the protective film 8, the electrode 7 is exposed. In this embodiment, the protective film 8 is engraved with a dry etching device using a mixed gas (SF6: CHF3: He = 12.5: 12.5: 75) containing an etching gas of SF0 and CHF3 and a carrier gas such as He. Since the protective film 8 is etched using not only SF6 but also CHF3 due to the etching gas, the inner wall surface 8b of the hole 8a can be taperedly etched obliquely to the surface of the substrate 1. As the dry etching device, for example, a reactive ion etching (rie) device, an inductively coupled plasma etching (ICP) device, a high-density plasma etching device, or the like can be used. In this embodiment, the taper angle θ of the inner wall surface 8b is about 70 degrees. By performing tapered etching, the step coverage in the hole "to be described later in the reflective electrode 10 (see Fig. 6) can be improved. The tapered angle Θ can be changed, for example, by changing the mixing amount of the gas. X, In the embodiment H, in order to easily perform the tapered etching of the protective film 8, CHF3 gas is used, but instead of CHI gas, for example, C2HF5 gas can be used. 83420 -13- 200402756 As described above, the underlayer film 9 is used as protection. The role of the etching mask of the film 8 ', but the underlying film 9 not only fulfills the role as an etching mask, but also has to fulfill the role of the underlying film in order to make the reflecting electrode 10 (refer to FIG. 6) described later have good reflecting characteristics. However, if the underlayer film 9 is also etched in the etching protection film 8, the surface shape of the underlayer film 9 will be deformed, and the inclination angle 01 (see FIG. 4) of the surface of the underlayer film 9 after the protection film 8 is etched. The range may greatly deviate from the range of the inclination angle of the surface of the underlying film 9 of the etching-preserving film 8. Thus, if the range of the inclination angle of the surface of the underlying film 9 deviates from this range, 'even in the underlying film' 9 on the surface forming a reflective electrode 1 (Refer to FIG. 6) Since the reflection characteristics of the reflective electrode 10 may deviate greatly from the desired characteristics, it is better not to etch the underlying film 9 as much as possible. Here, in this embodiment, the protective film 8 is etched by etching. Mixed gas etching of carrier gas and carrier gas. Because the carrier gas is contained in the mixed gas, the etching speed of the base film 9 can be sufficiently slower than that of the protective film 8, and the base layer after the etching of the protective film 8 can be completed. The surface shape of the film 9 remains substantially the same as the surface shape of the underlying film 9 before the protective film 8. Therefore, even if the protective film 8 is etched, the deformation of the surface shape of the underlying film 9 can be suppressed to a minimum. The film 9 can serve as an underlayer film that allows the reflective electrode to have good reflection characteristics. Furthermore, in this embodiment, although He is used as a carrier gas, Ar can be used instead of He. For example, the protective film 8 is used as described above. After the etching, a reflective electrode is formed (refer to FIG. 0. FIG. 6 is a cross-sectional view showing a substrate on which the reflective electrode 10 is formed. The reflective electrode 10 is a high-reflectance film such as an A1 film. The electrical film is formed by patterning the conductive film. Since the bottom layer of the reflective electrode 10 is 83420 -14- 200402756, the surface of the film 9 has a large number of concave portions 9b and convex portions 9c (refer to FIG. Y, the reflective electrode 10 A large number of concave portions 10a and convex portions 1 Ob are formed similar to the surface shape of the underlayer film 9. As a result, a reflective electrode 1 with good reflection characteristics can be obtained. In this way, a TFT substrate 5 1 is formed (see FIG. 1) In this embodiment, since the underlayer film 9 of the reflective electrode 10 has a large number of concave portions 9b and convex portions 9c on the surface, it can fulfill the role of providing the reflective electrode 10 with good reflective characteristics, and can also be used for protection. The film 8 functions as an etching mask for the holes 8a (see FIG. 5). Therefore, after the protective film 8 is formed, and before the underlayer film 9 is formed, a special lithography step for forming the holes 8a in the protective film 8 is not required. According to the previous method, after the protective film 8 is formed, the thistle of the base film 9 is formed, and a special lithography step for forming holes in the protective film is required. However, according to this embodiment, since the lithography is not required, The steps can reduce the number of manufacturing steps and manufacturing costs. Next, a TFT substrate manufactured by the second embodiment of the method of manufacturing a semiconductor device according to the present invention will be described. Fig. 7 is a partial cross-sectional view of a semi-transmissive liquid crystal display device manufactured by a second embodiment of a method of manufacturing a semiconductor device according to the present invention. This liquid crystal display device includes a TFT substrate 51G formed of a TFT 500, a reflective electrode 24, and the like, and a color filter substrate 520 formed of a color filter, a light filter, and the like. The surface of the reflective electrode 24 is provided with a plurality of concave portions 24b and convex portions 24o. The structure of the color filter substrate 520 is simplified as in FIG. A liquid crystal layer 53 is provided between the tft substrate 510 and the color filter substrate 520. The tft substrate 510 (the backside is provided with a backlight.) Hereinafter, a method for manufacturing a TFT substrate having a characteristic portion of the second embodiment will be described with reference to FIGS. 7 and 8 83420 -15- 200402756 to FIG. 11. First, with The method described with reference to FIG. 2 is the same method. After forming the gate 2, the gate insulating film 3, the semiconductor film 4, the ohmic contact layer 5, the source 6 and the drain 7 on the glass substrate 1, a connection to the drain is formed. ITO film of electrode 7 (refer to FIG. 8). FIG. 8 is a cross-sectional view showing a substrate on which ITO film 21 is formed. The ITO film 21 (equivalent to the conductive light-transmitting film according to the present invention) has a first electrode connected to a non-electrode. A portion 21a and a second portion 21b extending from the first portion 21a to the gate insulating film 3. After the ITO film 21 is formed, a protective film is formed on the substrate on which the ITO film 21 is formed. Fig. 9 shows the formation A cross-sectional view of a substrate of the protective film 22. The ITO film 21 existing under the protective film 22 (corresponding to the third insulating film according to the present invention) needs to be connected to a reflective electrode 24 (see FIG. 7) described later, and The protective film 8 needs to be formed as a hole connecting the ITO film 21 and the reflective electrode 24. However, in In the second embodiment, an underlayer film (see FIG. 10) having a large number of concave portions 24b and convex portions 24c (see FIG. 7) on the surface of the reflective electrode 24 is formed before the protective film 22 is formed with holes. A cross-sectional view of the substrate of the underlayer film 23. The underlayer film 23 has a hole 23a (corresponding to the fourth hole in the present invention) at a position corresponding to 2 lb of the second part of the ITO film 21. Furthermore, the bottom film 23 The surface of the film 23 includes a large number of concave portions 23b and convex portions 23c. Such an underlayer film 23 can be formed by the same method as described with reference to FIG. 4. After the underlayer film 23 is formed, the protective film 22 is etched (see FIG. (Figure 11). Figure Π is a cross-sectional view of the substrate after the protective film 22 is etched. Because the underlayer film 23 is formed with a hole 23a, the underlayer film 23 is used as an etching 83420 -16-200402756 mask to describe the protective film 22 A hole 22a (corresponding to the fourth communication hole according to the present invention) that is continuous with the hole 23a of the underlayer film 23 is formed in the protective film 22. The etching of the protective film 22 can be described by referring to FIG. 5. The method is performed in the same way. By forming the hole 22a due to the protective film 22, ITO The second part 2lb of the film 21 exits. After the protective film 22 is etched, a TFT substrate 510 is formed by forming a reflective electrode 24 as shown in FIG. 7. On the reflective electrode 24, a backlight BL (see FIG. 7) The hole 24a through which the light passes. In this way, by providing the hole 24a in the reflective electrode 24, the TFT substrate 5 10 can be used for a semi-transmissive liquid crystal display device having both reflective and transmissive functions. In the second embodiment, the underlayer film 23 of the reflective electrode 24 has a large number of concave portions 23b and convex portions 23c on its surface, which can play a role in making the reflective electrode 24 have good reflection characteristics, and also serve as a protective film 22 The role of an etching mask for forming the hole 22a (see FIG. 11). Therefore, after forming the protective film ^ and before forming the underlayer film 23, a dedicated lithography step for forming the hole 22a in the protective film 22 is not required, and the number of manufacturing steps and manufacturing cost can be reduced. Furthermore, in the first and second embodiments described above, a method for manufacturing the bottom gate type τρτ substrates 51 and 5 10 will be described. The present invention can also be applied to the manufacture of top gate type TFTs. Hereinafter, an example in which the present invention is applied to the manufacture of a top-gate tft substrate will be described. Fig. 12 is a partial cross-sectional view of a top-gate type liquid crystal display device manufactured according to a first embodiment of the method for manufacturing a semiconductor device according to the present invention. The liquid crystal display device includes a TFT substrate 6G1 on which a TFT 600, a reflective electrode 68, and the like are formed, and a color filter substrate 602 and a TFT substrate 601 on which a color filter, a light sheet, and the like are formed. The reflective electrode 68 is provided on the surface of the reflective electrode 68. Η η 83420 -17- 200402756 There are many concave and convex parts. The structure of the color filter substrate 602 simplifies the recording. A liquid crystal layer 6 exists between the TFT substrate 601 and the color filter 602. The back of the TFT substrate 601 has a backlight 3 [. Hereinafter, a method of manufacturing a TFT substrate will be described with reference to FIGS. 12 and 13 to 18. First, as shown in FIG. 13, a source 61, a drain 62, a semiconductor film 63, and a SiN film 64 are formed on a glass substrate 60 on which a Si02 film (not shown) is formed. Here, although the source 61 and the drain electrode 62 are composed of a 1 but 0 film 1 ^ 1 and a metal film? The two-layer film of 2 can also be formed of a single-layer film or a laminated film of three or more layers. As the metal film F2, for example, a metal film containing a small amount of chromium (Cr) and molybdenum (Mo) as a main component can be used. After the SiN film 64 is formed, an insulating film is formed so as to cover the SiN film 64 (see Fig. 14). FIG. 14 is a cross-sectional view of a substrate on which the insulating film 65 is formed. As the insulating film 65 (corresponding to the i-th insulating film according to the present invention), for example, a SiN film can be used. After the insulating film 65 is formed, a gate electrode is formed (see FIG. 15). FIG. 15 is a cross-sectional view of a substrate on which the gate electrode 66 is formed. The gate electrode 66 can be formed by, for example, forming a metal film such as an A1 film, and patterning the metal film. When the metal film is patterned, a gate line connected to the gate 66 is formed in the red except for the gate 66. However, in FIG. 15, the illustration of the stalk green is omitted. The drain electrode 62 existing under the insulating film 65 needs to be connected to a reflective electrode 68 described later (see Figs. 12 and 18). Therefore, it is necessary to form a hole connecting the drain electrode 62 and the reflective electrode 68 in the insulating film 65. However, in the third embodiment, after the gate electrode 66 is formed and before the insulating film 65 is formed, a hole is formed to be described later. The reflective electrode 68 has a plurality of underlying films of concave and convex portions. ····· ha mi 83420 -18- 200402756 Fig. 16 is a cross-sectional view of a substrate on which an underlayer film 67 is formed. The underlayer film 67 can be formed in the same manner as the method described with reference to Fig. 4. The underlayer film 67 has a hole 67a (corresponding to the first hole in the present invention) at a portion corresponding to the drain electrode 62, and further has a plurality of concave portions 67b and convex portions 67c on the surface of the underlayer film 67. After the underlayer film 67 is formed in this manner, the insulating film 65 is etched (see FIG. 17). FIG. 17 is a cross-sectional view of the substrate after the insulating film 65 is etched. This insulating film 65 uses the underlying film 67 as an etching mask, and is dry-etched in the same manner as described with reference to FIG. 5. By this dry etching, the inner wall surface 65b of the hole 65a (corresponding to the first communication hole of the present invention) of the insulating film 65 can have the same tapered angle e as the inner wall surface 8b of FIG. After the insulating film 65 is etched, a reflective electrode is formed (see FIG. 18). FIG. 18 is a cross-sectional view showing a substrate on which the reflective electrode 68 is formed. The reflective electrode 68 can be formed by, for example, forming an A1 film and patterning the A1 film. A hole 68a is formed in the reflective electrode 68 to allow light from the backlight bl (see FIG. 12) to pass through. However, as shown in FIG. 1A, since the 1-to-1 film of the drain electrode 62 is covered by the metal film F2, and the hole 68 is provided only in the reflective electrode 68, the light of the backlight BL cannot pass through the hole 68a. Therefore, after the reflective electrode 68 having the hole 68a is formed, a portion of the metal film F2 corresponding to the hole 68a is etched. By this etching, the ITO film F1 of the drain electrode 62 is exposed as shown in FIG. 12 (see FIG. 12), and the light of the backlight 8B can pass through the hole 68a of the reflective electrode 68. As described above, the TFT substrate 601 is manufactured. In the third embodiment, since the underlayer film 67 of the underlayer film of the reflective electrode 68 has a large number of concave portions 67b and convex portions 67c on the surface, the role of providing the reflective electrode with good reflection characteristics can be achieved, and it can also be achieved It plays the role of a mask for forming a hole 65a (see FIG. 17) in the edge film 65 in Jude 83420 -19- 200402756. Therefore, after the formation of the insulating film 65 and before the formation of the underlayer film 67, there is no need to use a special lithography step for forming a hole 65a in the insulating film 65. In the previous method, after the insulating film 65 is formed, and before the underlayer film 67 is formed, a special lithography step for forming a hole 65a in the insulating film 65 is required. However, according to this embodiment, since the micro film is not required, It can reduce the number of manufacturing steps and manufacturing costs. The following 'compares the reflection characteristics of the TFT substrate 601 manufactured by the method of the third embodiment with that before the formation of the hole 65a in the insulating film 65 by using a dedicated lithography step before forming the underlying film 67 after forming the insulating film 65 Reflection characteristics of a previous TFT substrate manufactured by the method. FIG. 19 is a graph showing reflection characteristics of a TFT substrate 601 and a conventional TFT substrate. The plot is a reflection characteristic when the TFT substrate is irradiated with external light from a 30-degree direction. The horizontal axis represents the viewing angle, and the vertical axis represents the reflectance. In the plot, the mark 0 indicates the reflection characteristics of the TFT substrate of the third embodiment, and the mark X indicates the reflection characteristics of the iTFT substrate manufactured by the previous method. As can be seen from Fig. 19, in the third embodiment, the reflection characteristics are maintained to the same extent as those of the previous method. Therefore, it can be seen that by adopting the method of the third embodiment, the number of manufacturing steps and manufacturing cost can be reduced compared with the previous method while maintaining the reflection characteristics. Furthermore, the present invention can also be applied to the manufacture of a tft substrate having a double gate structure. Hereinafter, an example of manufacturing a "D" substrate having a dual-gate structure using the fourth embodiment of the semiconductor device manufacturing method of the present invention will be described. Fig. 20 is a plan view of a portion of a TFT substrate 100 having a dual-gate structure. 83420 • 20-200402756 Figure, Figure 21 is a cross-sectional view taken along line AA of Figure 20, and Figure 22 is a cross-sectional view taken along line BB of Figure 20. On the TFT substrate 100, a reflective electrode 113 having a hole 113a is formed, and is conductively connected to the connection. The portion 114 (corresponding to the conductive portion of the present invention). The reflective electrode 113 is connected to the electrode 105. The conductive portion 114 is connected to the conductive portion 114, as shown in FIG. 22, which is a conductive connection that electrically connects the light shielding film 101 and the gate line 110. Hereinafter, the manufacturing method of the TFT substrate 100 shown in FIGS. 20 to 22 will be described with reference to FIGS. 23 to 34. FIG. 23 is a plan view showing the substrate 1 on which the light-shielding film 101 is formed, and FIG. A cross-sectional view taken along line CC of 23. A conductive masking film having conductivity is formed on the substrate 1. The conductive masking film 101 can be made of, for example, a small amount of chromium (Cr) and molybdenum (M0). ) Is formed as a metal film as a main component, and the metal film is patterned as shown in FIG. 23 The shape shown in FIG. 23 is formed. Although the conductive masking film 101 shown in FIG. 23 has a slightly L-shape, the shape of the conductive masking film 101 can be appropriately changed. The conductive masking film 01 has a gate corresponding to a later-mentioned gate. The first portion 101a of the electrode 109 (see FIG. 29) and the second portion 10lb extending from the first portion 101. After the light-shielding film 101 is formed, a Si02 film (see FIG. 25) is formed. FIG. 25 shows the formation Sectional view of the substrate of the Si02 film 102.-

Si〇2膜102 (相當於本發明所述第2絕緣膜），覆蓋導電性 遮膜的方式形成。存在於SiCh膜102之下之遮光膜1〇1，有 必要與後述之連接導電部114 (參照圖22)連接。因此，於該 Si 〇2膜102’有必要形成為連接遮光膜與連接導電部114 之孔，但是，在此，於8丨〇2膜1〇2形成為連接遮光膜1〇1與_ 83420 -21 - 200402756 連接導電部114之孔之前，形成源極、源極線及汲極（參照 圖26及圖27)。 圖26為表示形成源極1〇3，源極線1〇4及汲極1〇5之基板之 平面圖’圖27為圖26之D-D線之剖面圖。 原桎103與延伸於y方向之源極線丨〇4連接，於該源極線 之右側，形成有汲極1〇5。於此，該等源極1〇3、源極線 104及汲極1〇5,雖具有由1丁〇膜1?1與金屬膜^所成之兩層構 以，代替兩層構造，亦可具有單層構造或三層以上之多層籲 構造。於形成源極103、源極線104及汲極1〇5後，形成半導 體膜、SiN膜、絕緣膜及閘極等（參照圖28及圖29)。 圖28為表示形成閘極1〇9等之基板之平面圖，圖29為圖28 之E-E線之剖面圖。 糸Φ成源極103、源極線1〇4及汲極1〇5後（參照圖26及圖 27)將半導體膜I%及SiN膜107形成，進一步將絕緣膜 (相當於本發明所述第丨絕緣膜）形成。於形成絕緣膜1〇8後， 於攻絶緣膜1 〇8上，形成閘極} 〇9及閘極線丨丨〇。於絕緣膜 _ 108，可利用例如膜。閘極1〇9，形成於遮光膜I。〗之第1 、 邵分101a之正上方（參照圖29)且與於延伸於χ方向之閘極線 110 (參知圖28)連接。閘極109及閘極線11〇，可以於絕緣膜 108之全面例如形成將μ膜等金屬膜，藉由將該金屬膜圖案 化以形成。又，於此，圖案化金屬膜時，閘極1 〇9及閘極線 110之外，亦形成Cs線U1。Cs線11;1並非必要，但藉由形成 Cs線111，可容易地形成蓄積電容。 再者’被絕緣膜108覆蓋之汲極1〇5有必要與後述之反射 83420 -22- 200402756 電極113 (參照圖21)連接，再者，經由si〇2膜ι〇2存在於絕 緣膜108之下之遮光膜1〇ι，有必要與於後形成之連接導電 部114 (參照圖22)之表面連接。因此，於該絕緣膜1〇8，有 必要形成為連接汲極1〇5與反射電極1丨3之孔，與連接遮光 膜101與連接導電部Π4連接之孔。但是，在此，於絕緣膜 108形成該等孔之前，先形成為於反射電極113 (參照圖21) 形成多數之凹部及凸部之底層膜（參照圖3〇及圖3丨）。 圖3 0為表示形成底層膜112之基板之平面圖，圖31為圖3〇 之F-F線之剖面圖，圖32為圖3〇iG-G線之剖面圖。 底層膜112，具有多數之凹部112(ι及凸部ii2e。於如此之 底層膜112，可以利用與邊參照圖4說明之方法同樣的方法 形成。於圖30至圖32，底層膜112以斜線表示。該底層膜 112 ’具有形成於對應於汲極105之位置孔n2a (相當於本發 明所述第1孔），形成於對應於遮光膜1〇1之第2部分1〇卟之 位置之孔112b (相當於本發明所述第2孔），及形成於對應於 閘極線110之部分之孔112c (相當於本發明所述第3孔）。將 具有如此之孔112a、112b及112c之底層膜112作為蝕刻掩 膜’姓刻絕緣膜108及Si〇2膜102 (參照圖33及圖34)。 圖33及圖34為，於蝕刻絕緣膜1〇8及以〇2膜1〇2之後之基 板剖面圖。圖33為對應於圖31之剖面圖，圖34為對應於圖 32之剖面圖。 將底層膜112作為截刻掩膜，以與邊參照圖$說明之方法 相同之方法將絕緣膜108乾蝕刻。藉由該乾蝕刻，於絕緣膜 108 ’形成分別連續地接著於底層膜112之孔U2a&112b之 83420 -23- 200402756 孔108a (相當於本發明所述第1連通孔）及孔1〇8b (相當於本 發明所述第2連通孔）。該等之孔1〇8a&1〇8b形成後接著連 續地進行Si〇2膜1〇2之乾蝕刻。藉由該乾蝕刻，於8丨〇2膜 102’形成連續地接著於絕緣膜1〇8之孔108b之孔i〇2a (相當 於本發明所述第3連通孔）。藉由如此地進行乾蚀刻，於絕 緣膜108之孔l〇8a之内壁面i〇8c，可設與圖5之内壁面8b同 樣的錐形角Θ的同時，可於Si〇2膜1〇2之孔1〇2a之内壁面 l〇2b設錐形角θ’。當乾蝕刻結束後則，如圖2〇至圖22所示， 藉由形成具有孔ll3a之反射電極U3及連接導電部114，製 造TFT基板1〇〇。該等反射電極113及連接導電部114，可以 例如形成A1膜，藉由將該八丨膜圖案化以形成。又，將該A1 膜蝕刻後，如圖21所示地，也將金屬膜F2蝕刻至IT〇膜F1 露出為止。藉由露出ITO膜F1，使由背光（無圖示）之光可通 過反射電極113之孔113a，可將TFT基板1〇〇用於反射式與穿 透式雙方。連接導電部114，係為連接閘極線11〇及遮光膜 1 01之導電部。藉由該連接導電邵114，可由閘極線之訊號 傳送土遮光膜101。其結果，可將遮光膜1 q 1與閘極1 〇 9同樣 地作用，可製造雙閘極構造之TFT基板1〇〇。 於第4實施形態，反射電極113之底層膜112，可達成使反 射電極113擁有良好的反射特性的角色的同時，亦可達成作 為於絕緣膜10 8形成孔1 〇 8 a及1 〇 8 b之姓刻掩膜之角色。因 此，於形成絕緣膜108後，於形成底層膜112之前，不需為 於絕緣膜108形成孔108a及l〇8b之專用之微影步驟，可謀求 製造步騾數及製造成本之減少。 83420 -24- 200402756 再者，於第4實施形態，將底層膜112作為蝕刻掩膜蝕刻 絕緣膜108後，接著也蝕刻Si02膜1〇2。因此，不需為於Si02 膜102形成孔i〇2a之專用之微影步驟，可進一步謀求製造步 驟數及製造成本之減少。 再者，於上述第1至第4實施形態，說明關於用於液晶顯 示裝置之基板之製造方法，惟本發明，於不脫離本發明之 要旨之範圍亦可應用於液晶顯示裝置以外之裝置。 產業上利用之可能姊 依照本發明，可提供謀求減少製造步騾數及製造成本之 方法，並應用該方法之裝置。 【圖式簡單說明】 圖1為利用本發明之半導體裝置之製造方法之第1實施形 態製造之反射式液晶顯示裝置之一部分剖面圖。 圖2為形成TFT50之玻璃基板1之剖面圖。 圖3為形成保護膜8之基板之剖面圖。 圖4為形成底層膜9之基板之剖面圖。 圖5為將保護膜8蚀刻後之基板之剖面圖。 圖6為表示形成反射電極1〇之基板之剖面圖。 圖7為利用本發明之半導體裝置之製造方法之第2實施形 悲製造之半穿透式液晶顯示裝置之一部分剖面圖。 圖8為表示形成1丁〇膜21之基板之剖面圖。 圖9為表示形成保護膜22之基板之剖面圖。 圖10為形成底層膜23之基板之剖面圖。 圖丨1為將保護膜22蝕刻後之基板之剖面圖。 83420 -25- 200402756 圖12為利用本發明之半導體裝置之製造方法之第3實施 形悲製造之頂閘極形液晶顯示裝置之一部分剖面圖。 圖13為表示形成源極61、沒極62、半導體膜63、SiN膜64 之基板之剖面圖。 圖14為形成絕緣膜65之基板之剖面圖。 圖15為形成閘極66之基板之剖面圖。 圖16為形成底層膜67之基板之剖面圖。 圖Π為將絕緣膜65蚀刻後之基板之剖面圖。 圖18為表示形成反射電極68之基板之剖面圖。 圖19為表示TFT基板600及先前之TFT基板之反射特性之 標输圖。 圖20為具有雙閘極構造之TFT基板100之平面圖。 圖21為圖20之A-A線之剖面圖。 圖22為圖20之B-B線之剖面圖。 圖23為表示形成遮光膜1〇1之基板i之平面圖。 圖24為圖23之C-C線之剖面圖。 圖25為表示形成8丨〇2膜102之基板之剖面圖。 圖26為表示形成源極1〇3，源極線104及汲極1〇5之基板之 平面圖。 圖27為圖26之D-D線之剖面圖。 圖28為表示形成閘極109之基板之平面圖。 圖29為圖28之E-E線之剖面圖。 圖30為表示形成底層膜112之基板之平面圖。 圖31為圖30之F-F線之剖面圖。 83420 -26- 200402756 圖32為圖30之G-G線之剖面圖。 圖33為對應於圖31之剖面圖。 圖34為對應於圖32之剖面圖。 【圖式代表符號說明】 1 基板 2，66， 109 閘極電極 3 閘極絕緣膜 4，63 半導體膜 5 歐姆接觸層 6，61， 103 源極電極 7，62， 105 汲極電極 8，22 保護膜 8a ， 9a ， 23a ， 65a ， 67a ， 68a ， 108a ， 108b ， 102 ， 112a ， 102b ， 102c ， 113a 8b，65b，108c 内壁面 9，23，67，112 底層膜 10，24，68，113 反射電極 10a，24b，67b，112d 凹部 10b，24c，67c，112e 凸部 ITO膜 第1部分 第2部分 TFT TFT基板 -27- 21 21a ， 101a 21b ， 101b 50 ， 500 ， 600 51 ^ 510 ^ 601 83420 200402756 52 ， 520 ， 602 53 ， 530 60 64 65 ， 108 100 101 102 104 107 110 111 114The SiO2 film 102 (corresponding to the second insulating film according to the present invention) is formed so as to cover the conductive mask. The light shielding film 101 existing under the SiCh film 102 needs to be connected to a connection conductive portion 114 (see FIG. 22) described later. Therefore, it is necessary to form a hole connecting the light-shielding film and the conductive portion 114 to the Si 〇2 film 102 '. However, here, the SiO2 film 102 is formed to connect the light-shielding film 101 and _ 83420. -21-200402756 Before the holes of the conductive portion 114 are connected, a source, a source line, and a drain are formed (see FIGS. 26 and 27). Fig. 26 is a plan view showing a substrate on which source 103, source line 104 and drain 105 are formed; Fig. 27 is a sectional view taken along line D-D of Fig. 26; The original source 103 is connected to a source line extending in the y direction, and a drain 105 is formed to the right of the source line. Here, the source electrode 103, the source line 104, and the drain electrode 105 have a two-layer structure composed of a 1but film 1 to 1 and a metal film ^ instead of the two-layer structure. It can have a single-layer structure or a multilayer structure with more than three layers. After the source 103, the source line 104, and the drain 105 are formed, a semiconductor film, a SiN film, an insulating film, a gate electrode, and the like are formed (see FIGS. 28 and 29). FIG. 28 is a plan view showing a substrate on which gates 10 and the like are formed, and FIG. 29 is a cross-sectional view taken along line E-E of FIG. 28. After forming the source electrode 103, the source line 104, and the drain electrode 105 (refer to FIGS. 26 and 27), a semiconductor film I% and a SiN film 107 are formed, and an insulating film (corresponding to the present invention) No. 丨 insulating film) is formed. After the insulating film 108 is formed, a gate electrode and a gate line are formed on the insulating film 108. For the insulating film _ 108, for example, a film can be used. The gate electrode 10 is formed on the light-shielding film I. The first one is directly above Shaofen 101a (see FIG. 29) and is connected to the gate line 110 (see FIG. 28) extending in the χ direction. The gate electrode 109 and the gate line 110 can be formed on the entire surface of the insulating film 108 by, for example, forming a metal film such as a μ film, and patterning the metal film. Here, when the metal film is patterned, the Cs line U1 is formed in addition to the gate 10 and the gate line 110. The Cs line 11; 1 is not necessary, but by forming the Cs line 111, a storage capacitor can be easily formed. Furthermore, the drain 105 covered by the insulating film 108 needs to be connected to the reflection 83420 -22- 200402756 electrode 113 (refer to FIG. 21) described later, and also exists in the insulating film 108 via the SiO2 film ι〇2. The lower light-shielding film 100m must be connected to the surface of the connection conductive portion 114 (see FIG. 22) formed later. Therefore, in the insulating film 108, it is necessary to form a hole connecting the drain electrode 105 and the reflective electrode 1 and 3, and a hole connecting the light shielding film 101 and the conductive portion Π4. However, before the holes are formed in the insulating film 108, an underlayer film (refer to FIG. 30 and FIG. 3) is formed so that a large number of concave portions and convex portions are formed on the reflective electrode 113 (see FIG. 21). FIG. 30 is a plan view showing a substrate on which the underlayer film 112 is formed, FIG. 31 is a cross-sectional view taken along line F-F in FIG. 30, and FIG. 32 is a cross-sectional view taken along line 30-G in FIG. The underlayer film 112 has a large number of recessed portions 112 (i) and convex portions ii2e. In this way, the underlayer film 112 can be formed by the same method as described with reference to FIG. 4. As shown in FIGS. 30 to 32, the underlayer film 112 is slanted. The bottom film 112 'has a hole n2a (corresponding to the first hole in the present invention) formed at a position corresponding to the drain 105, and formed at a position corresponding to a 10th porosity of the second part of the light-shielding film 101. A hole 112b (equivalent to the second hole according to the present invention), and a hole 112c (equivalent to the third hole according to the present invention) formed in a portion corresponding to the gate line 110. Such holes 112a, 112b, and 112c will be provided The underlying film 112 is used as an etching mask, and the insulating film 108 and the SiO2 film 102 (see FIGS. 33 and 34) are shown in FIG. 33 and FIG. 34. The etched insulating film 108 and the SiO2 film 1 are etched. Sectional view of the substrate after 2. Fig. 33 is a sectional view corresponding to Fig. 31, and Fig. 34 is a sectional view corresponding to Fig. 32. The underlayer film 112 is used as a cutting mask in the same way as described with reference to Fig. A method is used to dry-etch the insulating film 108. By the dry etching, the insulating film 108 'is formed successively on the insulating film 108', respectively. Holes U2a & 112b of the film 112 112-23-23 200402756 Hole 108a (equivalent to the first communication hole according to the present invention) and hole 108b (equivalent to the second communication hole according to the present invention). Such holes After the formation of 108a & 108b, a dry etching of the Si02 film 102 was successively performed. By this dry etching, a hole successively followed by the insulating film 108 was formed in the 8102 film 102 '. Hole 108b of 108b (corresponding to the third communication hole of the present invention). By performing the dry etching in this manner, the inner wall surface i0c of hole 108a of insulating film 108 can be provided within FIG. 5 While the wall surface 8b has the same taper angle Θ, a taper angle θ ′ can be set on the inner wall surface 102b of the hole 102a of the Si02 film 102. After the dry etching is completed, as shown in FIG. As shown in Fig. 22, a TFT substrate 100 is manufactured by forming a reflective electrode U3 having a hole 113a and a connection conductive portion 114. The reflection electrode 113 and the connection conductive portion 114 can, for example, form an A1 film.丨 The film is patterned to form. After etching the A1 film, as shown in FIG. 21, the metal film F2 is also etched until the IT0 film F1 is exposed. By exposing the ITO film F1, the The light of the backlight (not shown) can pass through the hole 113a of the reflective electrode 113, and the TFT substrate 100 can be used for both reflective and transmissive types. The conductive portion 114 is connected to connect the gate line 11 and the light-shielding film. The conductive part of 01. By connecting the conductive part 114, the light shielding film 101 can be transmitted by the signal of the gate line. As a result, the light shielding film 1 q 1 can act in the same way as the gate electrode 109, and a double gate can be manufactured. TFT substrate 100 with a polar structure. In the fourth embodiment, the underlayer film 112 of the reflective electrode 113 can fulfill the role of providing the reflective electrode 113 with good reflection characteristics, and can also be used to form holes 1 0 8 a and 1 0 8 b in the insulating film 108. The role of the engraved mask. Therefore, after the insulating film 108 is formed and before the underlayer film 112 is formed, a dedicated lithography step for forming the holes 108a and 108b in the insulating film 108 is not required, and the number of manufacturing steps and the manufacturing cost can be reduced. 83420 -24- 200402756 Furthermore, in the fourth embodiment, after the insulating film 108 is etched using the underlayer film 112 as an etching mask, the Si02 film 102 is also etched. Therefore, there is no need for a special lithography step for forming the holes 102a in the Si02 film 102, and it is possible to further reduce the number of manufacturing steps and the manufacturing cost. In the first to fourth embodiments, a method for manufacturing a substrate for a liquid crystal display device will be described. However, the present invention can be applied to devices other than a liquid crystal display device without departing from the scope of the present invention. Industrial Applicability According to the present invention, it is possible to provide a method for reducing the number of manufacturing steps and manufacturing cost, and an apparatus using the method. [Brief Description of the Drawings] FIG. 1 is a partial cross-sectional view of a reflective liquid crystal display device manufactured using the first embodiment of the method for manufacturing a semiconductor device of the present invention. FIG. 2 is a cross-sectional view of a glass substrate 1 on which a TFT 50 is formed. FIG. 3 is a cross-sectional view of a substrate on which the protective film 8 is formed. FIG. 4 is a cross-sectional view of a substrate on which the underlayer film 9 is formed. FIG. 5 is a cross-sectional view of the substrate after the protective film 8 is etched. FIG. 6 is a cross-sectional view showing a substrate on which the reflective electrode 10 is formed. Fig. 7 is a partial cross-sectional view of a semi-transmissive liquid crystal display device manufactured by a second embodiment of the method of manufacturing a semiconductor device according to the present invention. FIG. 8 is a cross-sectional view showing a substrate on which a 1-but film 21 is formed. FIG. 9 is a cross-sectional view showing a substrate on which the protective film 22 is formed. FIG. 10 is a cross-sectional view of a substrate on which the underlayer film 23 is formed. 1 is a cross-sectional view of a substrate after the protective film 22 is etched. 83420 -25- 200402756 Fig. 12 is a partial cross-sectional view of a top-gate-type liquid crystal display device manufactured using a third embodiment of the semiconductor device manufacturing method of the present invention. 13 is a cross-sectional view showing a substrate on which a source electrode 61, a sink electrode 62, a semiconductor film 63, and a SiN film 64 are formed. FIG. 14 is a cross-sectional view of a substrate on which the insulating film 65 is formed. FIG. 15 is a cross-sectional view of a substrate on which the gate electrode 66 is formed. FIG. 16 is a cross-sectional view of a substrate on which an underlayer film 67 is formed. FIG. 9 is a cross-sectional view of the substrate after the insulating film 65 is etched. FIG. 18 is a cross-sectional view showing a substrate on which the reflective electrode 68 is formed. FIG. 19 is a graph showing reflection characteristics of a TFT substrate 600 and a conventional TFT substrate. FIG. 20 is a plan view of a TFT substrate 100 having a double-gate structure. Fig. 21 is a sectional view taken along the line A-A in Fig. 20. Fig. 22 is a sectional view taken along the line B-B in Fig. 20. FIG. 23 is a plan view showing a substrate i on which the light-shielding film 101 is formed. Fig. 24 is a sectional view taken along the line C-C in Fig. 23. FIG. 25 is a cross-sectional view showing a substrate on which the SiO 2 film 102 is formed. Fig. 26 is a plan view showing a substrate on which a source electrode 103, a source line 104 and a drain electrode 105 are formed. Fig. 27 is a sectional view taken along the line D-D in Fig. 26. FIG. 28 is a plan view showing a substrate on which the gate electrode 109 is formed. Fig. 29 is a sectional view taken along the line E-E in Fig. 28. FIG. 30 is a plan view showing a substrate on which the underlayer film 112 is formed. Fig. 31 is a sectional view taken along the line F-F in Fig. 30. 83420 -26- 200402756 Fig. 32 is a sectional view taken along the line G-G in Fig. 30. FIG. 33 is a sectional view corresponding to FIG. 31. FIG. 34 is a sectional view corresponding to FIG. 32. [Explanation of Symbols of Drawings] 1 Substrate 2, 66, 109 Gate electrode 3 Gate insulating film 4, 63 Semiconductor film 5 Ohmic contact layer 6, 61, 103 Source electrode 7, 62, 105 Drain electrode 8, 22 Protective film 8a, 9a, 23a, 65a, 67a, 68a, 108a, 108b, 102, 112a, 102b, 102c, 113a 8b, 65b, 108c Inner wall surface 9, 23, 67, 112 Base film 10, 24, 68, 113 Reflective electrode 10a, 24b, 67b, 112d Concave part 10b, 24c, 67c, 112e Convex part ITO film Part 1 Part 2 TFT TFT substrate -27-21 21a, 101a 21b, 101b 50, 500, 600 51 ^ 510 ^ 601 83420 200402756 52, 520, 602 53, 530 60 64 65, 108 100 101 102 104 107 110 111 114

FI F2 彩色滤光片基板 液晶層 玻璃基板FI F2 color filter substrate liquid crystal layer glass substrate

SiN膜 絕緣膜 TFT基板 遮光膜SiN film Insulating film TFT substrate Light-shielding film

Si02 膜 源極線Si02 film source line

SiN膜 閘極線SiN film gate line

Cs線 連接導電部 ITO膜 金屬膜Cs line Connecting conductive part ITO film Metal film

83420 -28-83420 -28-

Claims (1)

200402756 拾、申請專利範園： 1. 一種半導體裝置之製造方法，其特徵在於：其係於基板上 具備電晶體，其具有閘極、源極、及汲極；與反射電極， 其連接於上述汲極之半導體裝置之製造方法，具備以下乎 驟： V 於上述基板上形成上述源極及上述汲極； 於形成有上述源極及上述汲極之基板上形成第丨絕 膜； ' 於形成有上述第1絕緣膜之基板上形成底層膜，其係上 述反射電極之底層膜，於對應於上述汲極之位置具有第工 孔且於表面具有多數的凹部或凸部； 於對應於上述第1絕緣膜之上述汲極之位置，形成連續 地接著上述第1孔的第丨連通孔的方式，將上述底層膜作為 钱刻掩膜而蝕刻上述第1絕緣膜；及 於具有形成有上述第1連通孔之上述第1絕緣膜之上述 基板上形成上述反射電極，其係覆蓋上述底層膜之表面之 一部分之反射電極，通過上述第i孔及上述第丨連通孔連接 於上述汲極者。 2·如申請專利範圍第1項之半導體裝置之製造方法，其中上 述蝕刻步驟係下述步騾··使上述第1絕緣膜之上述第1連通 孔之内壁面對上述基板斜地傾斜的方式，錐形蝕刻上述第 1絕緣膜。 3·如申請專利範圍第2項之半導體裝置之製造方法，其中進 仃上述錐形蝕刻的步驟係使用混合氣體，其包含：蝕刻氣 ^其含有具有氟之碳化氫系之氣體；與載氣，錐形蝕刻 83420 200402756 上述第1絕緣膜。 4.如申請專利範圍第⑴項中任—項之半導體裝置之製造 万法其中於形成上述源極及上述沒極之步驟之前，具備 於上述基板上形成上述閘極之步驟。 η 5·如申請專利範圍第⑴項中任—項之半導體裝置之製造 方法’其中形成上述第1絕麦 述底層膜之步驟之前，且mr成7Γ，成有上 ^ /、備於形成有上述第1絕緣膜之基 板上形成上述閘極之步驟。 6.如申請專利範圍第⑴項中任—項之半導體裝置之製造 二、；中：備以下步驟:於形成上述源極及上述汲極之 則’於上述基板上形成導電性遮光膜，其係具有導 笔性之導電性遮光膜，且右、 ^ ^ ^ . v 八士底於上述閘極之第1部分及 ”忒罘1邯分連接之第2部分； 述：電性遮光膜之步驟之後，於形成上述源極* 上=二？之前，於形成有上述導電性遮光膜之基板 上开y成罘2絕緣膜；及 步:m、緣膜之步驟之後，於形成上述底層膜之 ’於形成有上述^絕緣膜之基板之上，形成上 处閘極及連接於上述閘極之閘極線； 形成上述底層膜之步驟更且 V ^ m /、有下逑步騾··於上述底層膜 孔=上述導電性遮光膜之第2部分之位置形成第2 孔；’ Μ層膜之對應於上述間極線之位置形成第3 上述钱刻步驟更具有下述步驟 對應於上述導電性遮光膜之第2却八、W1絶敝 罘2 #分《位置形成連續地 200402756 接著上述第2孔之第2連通孔，於上诚笛？w %上迷罘2絕緣膜之對應於 j述導電性遮光膜之第2部分之位置形成連續地接著上述 第2連通孔之第3連通孔的方式，將上述底層膜作為蚀刻掩 膜而蝕刻上述第1及第2絕緣膜； 形成上述反射電極之步驟更具有下述步驟：通過上述第 3孔、上述第2孔、上述第2連通孔及上述第3連通孔形成連 接上述導電性遮光膜與上述閘極線之導電部。 一種半導體裝置之製造方法，其特徵在於：其係於基板上 具備電晶體，其具有閘極、源極及汲極；導電性透光膜， 其連接於上述汲極，且具有導電性；及反射電極，其連接 於上述導電性透光膜之半導體裝置之製造方法，具備以下 步驟： 於上述基板上形成上述源極及上述汲極； 於形成有上述源極及上述汲極之基板上形成上述導電 I*生透光膜，其係連接於上述汲極之上述導電性透光膜，具 有連接於上述汲極之第i部分與連接於上述第丨部分且延 伸於對應於上述汲極及上述源極之區域以外之區域之第2 部分； 於形成有上述導電性透光膜之基板上形成第3絕緣膜； 於形成有上述第3絕緣膜之基板上形成底層膜，其係上 述反射電極之底層膜，於對應於上述導電性透光膜之第2 部分之位置具有第4孔且於表面具有多數凹部或凸部； 於上述第3絕緣膜之對應於上述導電性透光膜之第2部 分 < 位置形成連續地接著上述第4孔之第4連通孔的方 式’將上述底層膜作為蝕刻掩膜而蝕刻上述第3絕緣膜； 83420 200402756 及 於具有形成有上述第4連通孔之上述絕緣膜之上述基板 上形成上述反射電極，其係覆蓋上述底層膜表面之一部分 且通過上述第4孔及上述第4連通孔和上述導電性透光膜 連接著。 8. —種半導體裝置，其特徵在於：利用申請專利範圍第丨至了 項中任一項之半導體裝置之製造方法製造者。 9· -種液晶顯示裝置，其特徵在於：利用中請專利範圍第8 項之半導體裝置構成者。200402756 The patent application park: 1. A method for manufacturing a semiconductor device, which is characterized in that it is provided with a transistor on a substrate, which has a gate, a source, and a drain; and a reflective electrode, which is connected to the above A method for manufacturing a semiconductor device having a drain electrode includes the following steps: V forming the source electrode and the drain electrode on the substrate; forming a first insulating film on the substrate on which the source electrode and the drain electrode are formed; An underlayer film is formed on a substrate having the above-mentioned first insulating film, which is an underlayer film of the above-mentioned reflective electrode, has a first working hole at a position corresponding to the drain electrode, and has a large number of concave or convex portions on the surface; The position of the drain electrode of the 1 insulating film is such that the first insulating film is continuously connected to the first communication hole of the first hole, and the first insulating film is etched using the underlying film as a money mask; and The reflective electrode is formed on the substrate of the first insulating film of the one communication hole, and the reflective electrode covers a part of the surface of the underlying film, and passes the i Shu and the first communication hole connected to the drain by. 2. The method for manufacturing a semiconductor device according to item 1 of the scope of patent application, wherein the etching step is the following step: a method of inclining the inner wall of the first communication hole of the first insulating film obliquely to the substrate The first insulating film is etched in a tapered manner. 3. The method for manufacturing a semiconductor device according to item 2 of the scope of patent application, wherein the step of performing the above-mentioned tapered etching uses a mixed gas, which includes: an etching gas ^ which contains a hydrocarbon-based gas having fluorine; and a carrier gas , Tapered etching 83420 200402756 the first insulating film. 4. The method for manufacturing a semiconductor device according to any one of the items in the scope of the patent application (1). Before the steps of forming the above-mentioned source electrode and the above-mentioned non-polar electrode, including the step of forming the above-mentioned gate electrode on the substrate. η 5 · As in the method for manufacturing a semiconductor device according to any one of the item ⑴ of the scope of the patent application ', wherein before the step of forming the first underlayer film described above, and mr becomes 7Γ, there is a ^ /, prepared for forming And a step of forming the gate electrode on the substrate of the first insulating film. 6. If the manufacture of a semiconductor device in any one of the scope of the patent application item (2); middle: prepare the following steps: the formation of the above-mentioned source and the above-mentioned drain electrode 'form a conductive light-shielding film on the above substrate, which It is a conductive light-shielding film with pen-guiding properties, and the right, ^ ^ ^. V Basidi is in the first part of the above-mentioned gate and the second part of the "忒 罘 1Handle connection"; After the steps, before forming the above source electrode * up = two ?, open a Y2 insulating film on the substrate on which the conductive light-shielding film is formed; and after the steps of m and edge film, form the underlying film. On the substrate on which the above-mentioned insulating film is formed, an upper gate and a gate line connected to the above gate are formed; the step of forming the above-mentioned underlying film is further V ^ m /, and there is a next step ··· A second hole is formed at the position of the above-mentioned bottom film hole = the second part of the above-mentioned conductive light-shielding film; the third step of the M layer film corresponding to the above-mentioned epipolar line is formed, and the above-mentioned money engraving step has the following steps corresponding to the above Conductive light-shielding film No. 2 but eight, W1 must be 2 # points " The second communication hole 200402756 followed by the above-mentioned second hole is formed continuously at the position of the second part of the insulating film corresponding to the second part of the conductive light-shielding film of the above-mentioned conductive film. In the method of the third communication hole of the two communication holes, the first and second insulating films are etched by using the underlying film as an etching mask. The step of forming the reflective electrode further includes the following steps: passing the third hole, the first The two holes, the second communication hole, and the third communication hole form a conductive portion connecting the conductive light-shielding film and the gate line. A method for manufacturing a semiconductor device is characterized in that it includes a transistor on a substrate, It has a gate electrode, a source electrode, and a drain electrode; a conductive light-transmitting film connected to the drain electrode and has conductivity; and a reflective electrode connected to the conductive light-transmitting film for a semiconductor device manufacturing method, including: The following steps: forming the source and the drain on the substrate; and forming the conductive I * light-transmitting film on the substrate on which the source and the drain are formed, which are connected The conductive light-transmitting film of the drain electrode has a second portion connected to the i-th portion of the drain electrode and a second portion connected to the first-part portion and extending beyond a region corresponding to the drain-source and the source electrode; Forming a third insulating film on the substrate on which the conductive light-transmitting film is formed; and forming an underlayer film on the substrate on which the third insulating film is formed, which is an underlying film of the reflective electrode, corresponding to the conductive light transmission The second part of the film has a fourth hole in the position and has a large number of recesses or protrusions on the surface; the second part of the third insulating film corresponding to the conductive light-transmitting film < The method of the fourth communication hole of the hole 'etches the third insulating film using the underlying film as an etching mask; 83420 200402756 and forming the reflective electrode on the substrate having the insulating film in which the fourth communication hole is formed, It covers a part of the surface of the underlying film and is connected to the conductive light-transmitting film through the fourth hole and the fourth communication hole. 8. A semiconductor device, characterized in that it utilizes a method of manufacturing a semiconductor device according to any one of the scope of application for a patent application. 9 · A liquid crystal display device characterized by using a semiconductor device constituting the eighth aspect of the patent application. 8342083420