TW200306020A - Light-emitting device and forming method thereof - Google Patents
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200306020 五、發明說明α) 一、 【發明所屬之技術領域】 本發明係關於一種發光二極體元件與其形成方法,特 別是一種具有高製程良率及較大發光面積之發光二極體元 件與其形成方法。 二、 【先前技術】 近年來發光二極體產業的發展朝向氮化鎵(Gallium N 1 t r i de)基半導體例如氮化鎵化合物半導體,作為用以 發出光波長範圍介於綠光、藍光與紫外光之間的短波長發 光二極體。短波長發光二極體由於具有高頻率或短波長可 用作為綠光及藍光於全彩之應用,藍光與紫光發光二極體 更可經由過能量轉換做成白光光源。 傳統上,為了增加氮化鎵/藍寶石發光二極體的發光 面積,而將電極接點置於對角線兩端以增加發光面積。但 是為了將電極接點與外界連接以驅動發光二極體,必須將 電極接點以導線穿過一形成於發光二極體頂端的金屬墊( Pad)或電極接墊(Contact Pads)。這樣的設計會造成 發光二極體的發光面積遭到遮蔽,特別是俯視發光二極體 時,亦即發光二極體的發光面積實質上變小。此外,此傳 統結構易造成電流過度集中於兩個金屬墊之間,亦即造成 電流壅塞而影響元件壽命。 如以上所述,此化合物半導體發光二極體必須以電極200306020 V. Description of the invention α) 1. [Technical field to which the invention belongs] The present invention relates to a light-emitting diode element and a method for forming the same, particularly a light-emitting diode element having a high process yield and a large light-emitting area and Formation method. 2. [Previous Technology] In recent years, the development of the light-emitting diode industry is oriented towards Gallium N 1 tri de based semiconductors such as gallium nitride compound semiconductors, which are used to emit light in the wavelength range between green, blue and ultraviolet. Short-wavelength light-emitting diodes between lights. Short-wavelength light-emitting diodes can be used as green and blue light for full-color applications due to their high frequency or short wavelength. Blue- and purple-light-emitting diodes can be converted into white light sources through energy conversion. Conventionally, in order to increase the light emitting area of a gallium nitride / sapphire light emitting diode, electrode contacts are placed at both ends of a diagonal line to increase the light emitting area. However, in order to connect the electrode contacts with the outside world to drive the light emitting diode, the electrode contacts must be led through a metal pad (Contact Pads) or contact pads (Contact Pads) formed on the top of the light emitting diode. Such a design will cause the light-emitting area of the light-emitting diode to be shielded, especially when the light-emitting diode is viewed from the bottom, that is, the light-emitting area of the light-emitting diode becomes substantially smaller. In addition, this traditional structure is prone to cause excessive current concentration between the two metal pads, which can cause current congestion and affect component life. As mentioned above, this compound semiconductor light emitting diode must be an electrode
第6頁 200306020 五、發明說明(2) 接點置於發光面對角線兩端。由於為了將電極接點與外界 連接以驅動發光二極體,必須將電極接點以導線與外界連 接以驅動發光二極體,而電極接點與導線體積不可能太小 ,故將造成發光二極體的發光面積實質縮小。此外,當元 件尺寸縮小時,一般具正方形輪廓之發光二極體由於其電 極接點位於其對角線兩端,此時電極接點將十分接近且更 容易形成電流壅塞而影響元件特性,如可靠度降低且因電 極過度接近,打線良率將因而降低。另外,由於藍寶石底 材係屬六方晶系(H e X a g ο n a 1 L a 11 i c e),將發光二極體 切成正方形容易造成元件劈裂使得製程良率降低。 有鑑於上述傳統元件結構與製程的缺點,因此有必要 發展出一種新穎進步的元件結構與製程,此元件結構與製 程能克服上述傳統元件結構與製程之限制。 三、【發明内容】 本發明所欲解決之技術問題為提高元件切割(Page 6 200306020 V. Description of the invention (2) The contacts are placed at both ends of the diagonal line of the light-emitting surface. In order to connect the electrode contact with the outside to drive the light emitting diode, the electrode contact must be connected to the outside with a wire to drive the light emitting diode, and the volume of the electrode contact and the wire cannot be too small, so the light emitting diode will be caused. The light emitting area of the polar body is substantially reduced. In addition, when the size of the component is reduced, generally, a square-shaped light-emitting diode has its electrode contacts located at both ends of its diagonal. At this time, the electrode contacts will be very close and it will be easier to form a current congestion, which will affect the device characteristics, such as reliability. The degree of reduction is reduced, and the yield of the wire is reduced due to the excessive proximity of the electrodes. In addition, since the sapphire substrate system is a hexagonal crystal system (H e X a g ο n a 1 L a 11 i c e), cutting the light emitting diode into a square is likely to cause element splitting and reduce the process yield. In view of the shortcomings of the conventional component structures and processes described above, it is necessary to develop a novel and progressive component structure and process. This component structure and process can overcome the limitations of the conventional component structure and process. 3. [Content of the Invention] The technical problem to be solved by the present invention is to improve component cutting (
Scr i b i ng)的良率。 本發明所欲解決之技術問題為提供一尺寸縮小之覆晶 封裝發光二極體元件。 本發明所欲解決之技術問題為提供一當元件尺寸縮小 時仍具有足夠電極間距離之發光二極體元件。Scr i b i ng). The technical problem to be solved by the present invention is to provide a flip-chip packaged light emitting diode device with reduced size. The technical problem to be solved by the present invention is to provide a light-emitting diode device that still has a sufficient distance between electrodes when the device size is reduced.
第7頁 200306020 五、發明說明(3) 本發明所欲解決之技術問題為提供一種亮度均勻之發 光二極體元件。 本發明所欲解決之技術問題為提供一種能增加生產良 率與產量之發光二極體元件製程。 本發明所欲解決之技術問題為提供一種在同樣元件大 小情況下具有大發光面積之發光二極體元件結構與製程。 在一實施例中,本發明解決問題之技術手段包含下列 步驟。首先提供一底材,接著形成一具有一第一導電型之 第一摻雜半導體層於該底材上。然後形成一發光主動層於 該第一摻雜半導體層上。接著形成一具有一第二導電型之 第二摻雜半導體層於該發光主動層上。然後形成一透光導 體層於該第二摻雜半導體層上,並轉移複數個位於複數個 第一菱形圖案較長之對角線一端之第一電極圖案進入該透 光導體層、該第二摻雜半導體層與發光主動層並至該第一 摻雜半導體層之一預定深度,其中該第一菱形圖案之一邊 與該底材之易劈裂方向平行。接著形成一介電層覆蓋該底 材,並轉移位於複數個第二菱形圖案較長之對角線二端之 複數個該第一與第二電極圖案至該介電層並暴露出該透光 導體層與該第一摻雜半導體層,其中該第二菱形圖案之一 邊與該底材之易劈裂方向平行。然後形成複數個第一電極Page 7 200306020 V. Description of the invention (3) The technical problem to be solved by the present invention is to provide a light emitting diode element with uniform brightness. The technical problem to be solved by the present invention is to provide a light emitting diode device manufacturing process capable of increasing production yield and yield. The technical problem to be solved by the present invention is to provide a light emitting diode element structure and manufacturing process with a large light emitting area under the same element size. In one embodiment, the technical solution to the problem of the present invention includes the following steps. A substrate is provided first, and then a first doped semiconductor layer having a first conductivity type is formed on the substrate. A light emitting active layer is then formed on the first doped semiconductor layer. A second doped semiconductor layer having a second conductivity type is then formed on the light emitting active layer. Then, a light-transmitting conductor layer is formed on the second doped semiconductor layer, and a plurality of first electrode patterns located at the longer diagonal ends of the plurality of first rhombus patterns are transferred into the light-transmitting conductor layer and the second The doped semiconductor layer and the light emitting active layer reach a predetermined depth of the first doped semiconductor layer, wherein one side of the first diamond pattern is parallel to the easy-to-split direction of the substrate. A dielectric layer is then formed to cover the substrate, and a plurality of the first and second electrode patterns located at two ends of the longer diagonals of the plurality of second rhombus patterns are transferred to the dielectric layer and the light is exposed. The conductor layer and the first doped semiconductor layer, wherein one side of the second diamond pattern is parallel to the easy-to-split direction of the substrate. And forming a plurality of first electrodes
200306020 五、發明說明(4) 與第二電極於該第一摻雜半導體層與該透光導體層。沿該 底材之易劈裂方向切割出複數個具有菱形輪廓之元件及藉 由覆晶封裝方式將該元件之該第一電極與該第二電極以銲 接凸塊連接至二元件固定電極。 對照本發明與先前技術之功效,由於傳統之化合物半 導體發光二極體必須以電極接點置於發光面對角線兩端, 故將造成發光二極體的發光面積實質縮小,且亮度將較為 不均勻。本發明利用藍寶石底材晶格排列的特性,沿其晶 格易劈裂方向切割晶圓並形成一具有菱形輪廓之發光二極 體元件,因此能提供具有較大發光面積之發光二極體元件 ,同時能增加發光二極體元件製程生產良率與產量。另外 ,由於使用覆晶封裝的製程及將電極置於菱形輪廓對角線 。故較小的元件仍能可靠地被製為覆晶式元件。 上述有關發明的内容及以下實施方式的說明僅為範例 並非限制。其他不脫離本發明之精神的等效改變或修飾均 應包含在的本發明的專利範圍之内。 四、【實施方式】 在此必須說明的是以下描述之製程步驟及結構並不包 含完整之製程及結構。本發明可以藉各種製程技術來實施 ,在此僅提及瞭解本發明所需之製程技術。200306020 V. Description of the invention (4) and a second electrode on the first doped semiconductor layer and the transparent conductor layer. A plurality of diamond-shaped components are cut along the easy-to-split direction of the substrate, and the first electrode and the second electrode of the component are connected to two component fixed electrodes by welding bumps by flip-chip packaging. Comparing the efficacy of the present invention with the prior art, since the traditional compound semiconductor light-emitting diode must be placed at both ends of the light-emitting diagonal with electrode contacts, the light-emitting area of the light-emitting diode will be substantially reduced and the brightness will be relatively Uneven. The invention utilizes the characteristics of the sapphire substrate lattice arrangement to cut the wafer along its easy-to-split lattice direction to form a light-emitting diode element with a diamond-shaped outline, so it can provide a light-emitting diode element with a large light-emitting area. At the same time, it can increase the production yield and output of light-emitting diode elements. In addition, due to the use of a flip-chip packaging process and placing the electrodes on the diagonal of the diamond-shaped outline. Therefore, smaller components can still be reliably manufactured as flip-chip components. The above description of the content of the invention and the following embodiments are merely examples and are not limiting. Other equivalent changes or modifications that do not depart from the spirit of the invention should be included in the patent scope of the invention. Fourth, [implementation] What must be explained here is that the process steps and structures described below do not include a complete process and structure. The present invention can be implemented by various process technologies, and only the process technologies required to understand the present invention are mentioned here.
第9頁 200306020 五、發明說明(5) 以下將根據本發明所附圖示做詳細的說明,請注意圖 示均為簡單的形式且未依照比例描繪,而尺寸均被誇大以 利於瞭解本發明。 參考第一 A圖所示,顯示本發明之一實施例中一發光 二極體元件1 0。此發光二極體元件1 〇包含一底材1 〇 2,此 底材1 0 2上可形成多層化合物半導體結構,例如氮化鎵相 關化合物半導體層。此多層化合物半導體層可由金屬有機 化學氣相沈積(M0CVD)法形成,但也可由分子束磊晶( Μ BE)或其他化學氣相沈積法形成。此多層化合物半導體 層包含半導體層106、10 8與110。 發光二極體元件另包含透光導電層104。此透光導電 層1 0 4係以製程形成而非蠢晶形成。透光導電層4為一透 光導體層(Transparent Conductive Layer,TCL),而 半導體層108包含一主動(發光)層(Active Layer)。 半導體層1 0 6與1 1 0包含具有相反導電性質(N型或P型)的 半導體層,亦即半導體層1 0 6與Π 0可包含多層結構。此多 層結構可包含未摻雜之半導體層以作為緩衝層(Buf f er Layer)或包覆(Cladding Layer)層,或是 AlGaN/GaN及 InGaN等層之組合。 本發明之具有菱形輪廓的發光二極體元件,可利用各 種製程形成。一種形成方法為例如首先利用磊晶形成半導Page 9 200306020 V. Description of the invention (5) The following detailed description will be based on the drawings attached to the present invention. Please note that the drawings are simple forms and are not drawn to scale, and the dimensions are exaggerated to facilitate understanding of the present invention. . Referring to FIG. 1A, a light emitting diode element 10 according to an embodiment of the present invention is shown. The light emitting diode element 10 includes a substrate 102, and a multilayer compound semiconductor structure, such as a gallium nitride-related compound semiconductor layer, can be formed on the substrate 102. The multilayer compound semiconductor layer may be formed by a metal organic chemical vapor deposition (MOCVD) method, but may also be formed by molecular beam epitaxy (MBE) or other chemical vapor deposition methods. The multilayer compound semiconductor layer includes semiconductor layers 106, 108, and 110. The light-emitting diode element further includes a light-transmitting conductive layer 104. The transparent conductive layer 104 is formed by a manufacturing process instead of a stupid crystal. The transparent conductive layer 4 is a transparent conductive layer (TCL), and the semiconductor layer 108 includes an active (light emitting) layer (Active Layer). The semiconductor layers 106 and 110 include semiconductor layers having opposite conductive properties (N-type or P-type), that is, the semiconductor layers 106 and Π0 may include a multilayer structure. This multi-layer structure may include an undoped semiconductor layer as a buffer layer or a cladding layer, or a combination of layers such as AlGaN / GaN and InGaN. The diamond-shaped light emitting diode element of the present invention can be formed by various processes. One method of formation is, for example, first to form a semiconductor using epitaxy
200306020 五、發明說明(6) 體層1 0 6、1 0 8與1 1 〇,接著蝕刻半導體層1 〇 6、i丨〇、丨〇 8與 1 1 0 1 0 6之一部分形成一凹槽以容納一電極並連接半導體層 106,再以製程形成透光導電層104與透明介電層112。接S 著再形成電極於菱形圖案較長之對角線兩端,最後再以第 一 B圖所示之切割方式形成本發明之發光二極體元件。本 發明之具有菱形輪廓的發光二極體元件亦可以其他形成方 法製成。第一 A圖所示之電極1 1 4、1 1 6與導體層【1 8僅為範 例,並非限制。電極1 1 4與1 1 6可使用相同材料且同時形成 ,或使用不同材料。甚至電極1 1 8可省略。菱形圖案與電 極之形成可利用光罩、微影與蝕刻製程。電極π 4與i丨6與 1 1 8及透光導電層1 〇 4可由微影與物理/化學沈積法或傳統 之蒸鍍方式形成。介電層1 1 2將半導體層1 〇 6與}丨〇隔開。 而半導體層1 0 6與1 1 0透過電極1 1 6與1 1 4連接至驅動電路。 介電層1 1 2可為一二氧化矽層,但不限於二氧化石夕層,例 如氮化矽或透明之高分子層。而介電層1 1 2可由微影、钱 刻與化學氣相沈積法或傳統之蒸鍍法形成。介電層1 1 2對 於覆晶元件為必備,但對於非覆晶元件則或可省略。 若使用氮化鎵(G a N)化合物半導體,則底材1 〇 2包含 六方晶系(Hexagona1 Lattice)之藍寶石(Sapphire) 底材’。半&體層10 6與110包含一具有一第一導電型之第 一#雜氮化鎵半導體層與一具有一第二導電型之第二摻雜 氮化鎵半導體層。半導體層1 〇 6與11 〇可同時包含未摻雜氮 化 I豕緩衝層(Buffer Layer)或包覆(Cladding Layer)200306020 V. Description of the invention (6) Bulk layers 106, 108, and 1 10, and then etching a part of semiconductor layer 106, i 丨 〇, 丨 〇8, and 1 1 0 1 0 6 to form a groove to An electrode is received and the semiconductor layer 106 is connected, and then a light-transmitting conductive layer 104 and a transparent dielectric layer 112 are formed by a manufacturing process. Then, the electrodes are formed at both ends of the longer diagonal of the rhombus pattern, and finally the light emitting diode element of the present invention is formed by the cutting method shown in the first B figure. The light-emitting diode element having a diamond-shaped outline of the present invention can also be made by other forming methods. The electrodes 1 1 4, 1 1 6 and the conductor layer [1 8 shown in the first A are only examples, and are not limiting. The electrodes 1 1 4 and 1 1 6 may be formed using the same material and simultaneously, or different materials may be used. Even the electrodes 1 1 8 can be omitted. The diamond pattern and electrodes can be formed using photomask, lithography, and etching processes. The electrodes π 4 and i 6 and 1 18 and the light-transmitting conductive layer 104 can be formed by lithography and physical / chemical deposition methods or traditional evaporation methods. The dielectric layer 1 12 separates the semiconductor layer 106 from the semiconductor layer 106. The semiconductor layers 106 and 110 are connected to the driving circuit through the electrodes 1 16 and 1 1 4. The dielectric layer 1 12 may be a silicon dioxide layer, but is not limited to a silicon dioxide layer, such as a silicon nitride or a transparent polymer layer. The dielectric layer 1 12 can be formed by lithography, coin engraving, chemical vapor deposition, or traditional vapor deposition. The dielectric layer 1 1 2 is necessary for a flip-chip device, but may be omitted for a non- flip-chip device. If a gallium nitride (G a N) compound semiconductor is used, the substrate 102 includes a sapphire substrate of Hexagona1 Lattice. The semi-amplifier layers 106 and 110 include a first #hetero gallium nitride semiconductor layer having a first conductivity type and a second doped gallium nitride semiconductor layer having a second conductivity type. The semiconductor layers 106 and 11 may include undoped nitride 豕 buffer layer or cladding layer at the same time.
第11頁 200306020 五、發明說明(7) 層。半導體層1 0 6與1 1 〇為N型層與P型層,而電極1 1 4與1 1 6 則為P型電極與N型電極層。此外底材1 〇 2亦可為碳化矽( S i C)底材或其他耐高溫且透明之底材。Page 11 200306020 V. Description of invention (7) layer. The semiconductor layers 106 and 110 are N-type layers and P-type layers, and the electrodes 1 4 and 116 are P-type electrodes and N-type electrode layers. In addition, the substrate 102 may be a silicon carbide (S i C) substrate or other high-temperature-resistant and transparent substrate.
參考第一 B圖所示,顯示一包含第一 A圖所示之發光二 極體元件1 0的晶圓1之俯視圖。第一 A圖所示之發光二極體 元件1 0具有俯視菱形輪廓,而電極1 1 4與1 1 8則位於較長之 對角線兩端上,如第一 C圖所示。第一 D圖與第一 E圖則顯 示不同構形之電極1 1 4與1 1 8。第一 D圖所示之電極Π 4具有 二延伸區域,使電極1 1 4與1 1 8間之距離不論於何處均不至 於差距過大。第一 E圖所示之電極1 1 4與1 1 8各自具有一延 伸區域,使電極Π 4與1 1 8之間距不論於何處均十分均勻。 為了利於切割,可形成溝槽於發光二極體元件第_ C圖所 示之切割線上。 參考第一 F圖所示,本發明之發光二極體元件1 〇以凸 塊(Bump) 16與18固定於元件固定電極12與14上。電極12 與1 4則連接至電路,使本發明之發光二極體元件丨〇成為發 光二極體燈(Lamp)。發光二極體元件10係以覆晶(F1 ip Ch i p)封裝的方式,以電極1 1 4與1 1 8分別與凸塊1 6與i 8接 合。但上述之結構不限於以覆晶封裝的方式結合,亦可以 表面黏著(Surface Mounting)技術接合。第一 a圖所示 電極1 1 8並非必要,亦可省略。而第一 F圖中之凸塊(Bump )1 6與1 8亦可以導電膠取代。上述之結構不限於以覆晶封Referring to FIG. 1B, a top view of a wafer 1 including the light-emitting diode element 10 shown in FIG. 1A is shown. The light-emitting diode element 10 shown in the first picture A has a plan view of a rhombic shape, and the electrodes 1 1 4 and 1 1 8 are located at both ends of a longer diagonal line, as shown in the first picture C. The first D picture and the first E picture show electrodes 1 1 4 and 1 1 8 having different configurations. The electrode Π 4 shown in the first figure D has two extension regions, so that the distance between the electrodes 1 1 4 and 1 1 8 is not too large no matter where it is. The electrodes 1 1 4 and 1 1 8 shown in the first E diagram each have an extended area, so that the distance between the electrodes Π 4 and 1 1 8 is very uniform everywhere. In order to facilitate cutting, a groove may be formed on the cutting line shown in Fig. _C of the light emitting diode element. Referring to FIG. 1F, the light emitting diode element 10 of the present invention is fixed to the element fixing electrodes 12 and 14 with bumps 16 and 18. The electrodes 12 and 14 are connected to a circuit, so that the light emitting diode element of the present invention becomes a light emitting diode lamp (Lamp). The light-emitting diode element 10 is packaged in a flip-chip (F1 ip chip) package, and electrodes 1 1 4 and 1 1 8 are connected to the bumps 16 and 8 respectively. However, the above structure is not limited to the combination by flip-chip packaging, and can also be joined by Surface Mounting technology. The electrodes 1 1 8 shown in Fig. 1a are not necessary and may be omitted. The bumps 16 and 18 in the first F picture can also be replaced by conductive glue. The above structure is not limited to flip chip sealing
第12頁 易元二產小將小 格體光與縮及較 晶極發率寸程成 其二之良尺製做 沿光遠產件的可 ,發較生元裝並 性之離程當封, 特廓距製與晶勻 的輪極件率覆均 列形電元良用度 排菱、體的使亮 格有積極時於光 晶具面二}由發 S 材一光光In,, 底成發發lb外線 石形大加Γ1另角 C 寶並有增S 。對 藍圓具能C塞廓。 用晶供時割壅輪件 利割提同切流形元 明切能,是電菱裝 發向此件別免於封 本方因元特避置晶 裂,體,可極覆 劈件極量時電之 200306020 五、發明說明(8) 裝的方式結合,亦可以表面黏著(Surface Mounting)技 術接合。 參考第一 G圖所示,本發明之發光二極體元件1 0以覆 晶封裝的方式固定於電路板1 2 2之電極接觸墊1 2 0上。電極 接觸墊1 2 0則連接至電路。。發光二極體元件1 0係以覆晶 封裝的方式,以電極1 1 4與1 1 8分別與接觸墊1 2 0以銲接或 導電膠接合,亦可用凸塊1 6與1 8接合。上述之結構不限於 以覆晶封裝的方式結合,亦可以表面黏著技術接合。 上述有關發明的詳細說明僅為範例並非限制。其他不 脫離本發明之精神的等效改變或修飾均應包含在的本發明 的專利範圍之内。The light and shrinkage of the small elementary body of Yiyuan No. 2 Elementary School is the second best rule for making light parts far from the crystal. It can be used to make parts that are far from the light. The profile system and the crystal uniformity of the wheel poles cover the uniform shape of the cells, and the efficiency of the row of diamonds and the body makes the bright grid active when the light crystal surface. The hairline of the lb outer line is greatly increased by Γ1 and the other angle C is increased and S is increased. With blue circle can C plug contour. When using the crystal supply, the cutting wheel is cut to cut the same-cut manifold element and cut the energy. It is the electric diamond equipment to send to this piece. Do not avoid sealing the side due to the special element to avoid crystal cracks. 200306020 when measuring electricity V. Description of the invention (8) The combination of mounting methods can also be combined by Surface Mounting technology. Referring to FIG. 1G, the light-emitting diode element 10 of the present invention is fixed on the electrode contact pad 12 of the circuit board 12 2 in a flip-chip package. The electrode contact pad 1 2 0 is connected to the circuit. . The light-emitting diode element 10 is in a flip-chip package, and the electrodes 1 4 and 1 1 8 are respectively bonded to the contact pad 1 2 0 by soldering or conductive glue, and the bumps 16 and 18 can also be connected. The above structure is not limited to being bonded in a flip-chip package, and can also be bonded by surface adhesion technology. The above detailed description of the invention is merely an example and not a limitation. Other equivalent changes or modifications that do not depart from the spirit of the invention should be included in the patent scope of the invention.
第13頁 200306020 圖式簡單說明 五、【圖式簡单說明】 為了能讓本發明上述之其他目的、特徵、和優點能更 明顯易懂,下文特舉一較佳實施例,並配合所附圖式,作 詳細說明如下: 第一 A圖顯示本發明之一實施例中一半導體發光二極 體元件; 第一 B圖顯示一包含第一 A圖所示之半導體發光二極體 元件的晶圓之俯視圖, 第一 C圖顯示本發明一實施例之半導體發光二極體元 件之俯視圖; 第一 D圖顯示本發明另一實施例之半導體發光二極體 元件之俯視圖; 第一 E圖顯示本發明另一實施例之半導體發光二極體 元件之俯視圖; 第一 F圖顯示本發明之半導體發光二極體元件藉由覆 晶封裝的方式以固定於元件固定電極上;及 第一 G圖顯示本發明之半導體發光二極體元件藉由覆Page 13 200306020 Brief description of the drawings V. [Simplified description of the drawings] In order to make the other objects, features, and advantages of the present invention more obvious and understandable, a preferred embodiment is given below in conjunction with the attached The drawings are described in detail as follows: FIG. 1A shows a semiconductor light-emitting diode device according to an embodiment of the present invention; FIG. 1B shows a crystal including the semiconductor light-emitting diode device shown in FIG. A top plan view of a circle, a first C view shows a top view of a semiconductor light emitting diode element according to an embodiment of the present invention; a first D view shows a top view of a semiconductor light emitting diode element according to another embodiment of the present invention; a first E view shows A top view of a semiconductor light emitting diode element according to another embodiment of the present invention; the first F image shows that the semiconductor light emitting diode element of the present invention is fixed on the element fixing electrode by a flip-chip package; and the first G image The semiconductor light emitting diode device of the present invention is shown by
第14頁 200306020 圖式簡單說明 晶封裝的方式以固定於電路板上 主要部分之代表符號: 1晶圓 1 0發光二極體元件 1 2電極 1 4電極 1 6凸塊 1 8凸塊 1 0 2底材 1 0 4透光導體層 1 0 6半導體層 1 0 8主動(發光)導體層 1 1 0半導體層 1 1 2介電層 1 1 4電極 1 1 6電極 1 1 8導體層 12 0電極接觸墊 1 2 2電路板Page 14 200306020 The diagram simply illustrates the way the crystal package is fixed to the main symbols of the circuit board: 1 wafer 1 0 light emitting diode element 1 2 electrode 1 4 electrode 1 6 bump 1 8 bump 1 0 2 substrate 1 0 4 light-transmitting conductor layer 1 0 6 semiconductor layer 1 0 8 active (light-emitting) conductor layer 1 1 0 semiconductor layer 1 1 2 dielectric layer 1 1 4 electrode 1 1 6 electrode 1 1 8 conductor layer 12 0 Electrode contact pad 1 2 2 circuit board
第15頁Page 15
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