200305184 玫、發明說明： 【發明所屬之技術領域】 本發明相關於一種電極組件，其該電極組件係用於處 里個半導體基板，本發明並相關於包含該電極組件之處 理凌置。本發明更特別相關於連接到射頻（此後稱為rf)電 源之電極組件，以製造用於處理半導體基板的等離子體， 並且用於包含該半導體基板之處理裝置。 【先前技術】 一般而言，半導體置係由重覆地執行多種不同的單元 處理而製造出’該單元處理例如沈積處理、照片平面印刷 處理、蝕刻處理、離子植入處理、拋光處理，以及乾燥處 理。沈積處理係用於將不同種類的薄材料膜或層沈積於半 導體基板上’並且根據可被沈積的不同層所分類。蝕刻處 理係用於移除層的特定部分以形成具有特定電氣特徵的圖 ，。新進的沈積或是㈣技術使用離子態的處理氣體，將 簡稱為等離子體，等離子體係廣泛用於製造半導體裝置的 不同處理，特別是沈積以及蝕刻處理。 處理半導體基板的處理氣體係由包含RFi生器以及 RF匹配裝置的rf雷源 β史立 ▲ 以及文裝於處理室中的電極組件 所變化。此種電極組件的一個範例係揭露&⑽等 人獲准之美國專利帛6194322號，該電極組件包含石墨環 ，盤狀電極’以及由橡膠製造的連接部件。另外，由 Golovato等人獲准之美國專利第6173673號，揭示一種用 於將處理氣體轉換成等離子體的喷洒裝置。 200305184 又而σ ’電極組件通常包含第一電極以及第二電極 ，並且視須要句冬笛& τ ^ 弟一電極、第二電極以及第三電極，爷 :電極藉由例如螺检等的固定件與電極組件整合在一起 處理氣體係藉由這些電極組件而導入至該處理室。 第1圖顯示一種習知的電極組件。 參考第1圖，第— RF電源ι〇ι。第弟一办係以盤狀組成並連接至 2的中門部八 ^ 〇 2 〇 ^刀’以用於讓處理氣體流穿過第—電極工 二盤狀電極i 〇 4具有與第—電極相 樣具有，部分"“，其延著面二-: -穿孔^弟一電極1 〇4的第一表面周圍突出，多個第 -穿孔1 0 4 b均句地穿過第二電極 第 向連結部分1〇“延伸，於是處理氣體流過：了也朝 〇 2 “系經由孔1 ◦ 4 b而均勾的流向處 穿孔1 1三電極1Q6係相對於第二電極未顯示） 面而放置’其包含多個相對於第二穿 -主要表 孔1 〇 6 a。 4 b的第三穿 第一電極1〇2以及第二電極1〇4藉由 裎1 0 8而互相連結，螺栓i 〇 8係延著第〜 >、 和第三電極1 0 4的週邊部分而放置。另外，電極1 0 2 〇 4和第三電極χ 〇 6係藉由多個第二螺栓；：二電極1 結，該第二螺栓1 1 0係延著第二電極丄 0彼此連 1 0 6的週邊部分而放置。第一電極1 〇 2 〇 4係由鋁(A 1 )所製成，第三電極i 〇 :第二電極1 电不丄。6係由砂（s 土） 200305184 所製成。另一方面，第一螺栓1 〇 8和第二螺栓1 1 〇係 由不鏽鋼所製成。 當射頻電源提供至電極組件1 0 0，用以將處理氣體 轉換成等離子體，而在第一電極1 〇 2和第一螺栓i 〇 8 之每一者之間，第二電極1 〇 4和第螺栓1 〇 8之每—者 之間，以及第二電極1 〇 4和第二螺栓1 1 〇之每一者之 間形成放電空間，而該放電空間產生電力的不正常放電， 例如電弧。該不正常放電係肇因於第一電極丄〇 2與第二 電極1 0 4的鋁材質的導電性與第一螺栓丄〇 8和第二螺 栓1 ίο的不鏽鋼導電性之間的差異，在實務上說，鋼的 導電性低於鋁的導電性，該不正常放電會損壞第一電極1 0 2和第一電極1 〇 4的表面。帛2圖及第3圖顯示第二 電極1 0 4沿著第一容納螺栓孔工“ c的受損表面之_ 個範例。 時間之後，第一 整個表面上產生 第二電極1 0 4 小孔徑出現在第 ，該不正常放電 第二電極1 0 4 受損表面（A )處 孔1 0 6 a導入 染。另外，不正 另外，當電極組件1 0 0使用一段長200305184 Description of the invention: [Technical field to which the invention belongs] The present invention relates to an electrode assembly, which is used for a semiconductor substrate, and the present invention is also related to a process including the electrode assembly. The present invention is more particularly related to an electrode assembly connected to a radio frequency (hereinafter referred to as rf) power source to manufacture a plasma for processing a semiconductor substrate, and to a processing apparatus including the semiconductor substrate. [Prior art] In general, a semiconductor device is manufactured by repeatedly performing a variety of different unit processes, such as a deposition process, a photo lithographic process, an etching process, an ion implantation process, a polishing process, and a drying process. deal with. The deposition process is used to deposit different kinds of thin material films or layers on a semiconductor substrate 'and is classified according to the different layers that can be deposited. Etching is used to remove specific parts of a layer to form a pattern with specific electrical characteristics. Newer deposition or plutonium technology uses ionic processing gas, which will be referred to simply as plasma. Plasma is widely used in different processes for manufacturing semiconductor devices, especially deposition and etching processes. The processing gas system for processing semiconductor substrates is changed by an rf thunder source β Shi Li ▲ including an RFi generator and an RF matching device, and an electrode assembly installed in the processing chamber. An example of such an electrode assembly is disclosed in & 帛 et al. U.S. Patent No. 6,194,322, which includes a graphite ring, a disc-shaped electrode 'and a connecting member made of rubber. In addition, U.S. Patent No. 6,173,673, granted by Golovato et al., Discloses a spraying device for converting a process gas into a plasma. 200305184 In addition, the σ 'electrode assembly usually includes a first electrode and a second electrode, and depending on the sentence, the flute & τ ^ the first electrode, the second electrode and the third electrode, Ye: the electrode is fixed by, for example, screw inspection, etc. The processing gas system is integrated with the electrode assembly through the electrode assembly into the processing chamber. FIG. 1 shows a conventional electrode assembly. Refer to Figure 1, Section-RF Power Supply. The first office is composed of a disc and connected to the middle gate part 2 of the 2 刀 〇 〇 2 〇 ^ knife 'for passing the processing gas flow through the first electrode electrode two disk-shaped electrode i 〇4 has the same as the first electrode Similarly, "part" extends along the second surface of the second-:-perforated ^ di-electrode 1 〇4 protruding around the first surface, a plurality of -perforated 1 0 4 b all pass through the second electrode Extends to the connection part 10 ", so that the processing gas flows through it: It is also perforated to the flow direction of 02" through the holes 1 ◦ 4b. 1 1 Three electrodes 1Q6 are not shown with respect to the second electrode. Placed 'which includes a plurality of holes 106a with respect to the second through-main surface. The third through the first through 10b and the second through 10b are connected to each other by 裎 108. i 〇8 is placed along the peripheral parts of the first and third electrodes 104 and the third electrode 104. In addition, the electrode 102 and the third electrode χ 〇6 are provided by a plurality of second bolts; The electrode 1 is connected, and the second bolt 1 10 is placed along the peripheral portion of the second electrode 丄 0 connected to each other 106. The first electrode 1 〇2 〇4 is made of aluminum (A 1) The third electrode i 〇: The second electrode 1 is electrically stable. The 6 series is made of sand (s soil) 200305184. On the other hand, the first bolt 1 08 and the second bolt 1 1 0 are made of stainless steel. When the RF power is supplied to the electrode assembly 100 to convert the processing gas into a plasma, between the first electrode 1002 and the first bolt i 08, the second electrode 104 A discharge space is formed between each of the first bolt 108 and each of the second electrode 104 and the second bolt 110, and the discharge space generates an abnormal discharge of electric power, such as an arc The abnormal discharge is caused by the difference between the conductivity of the aluminum material of the first electrode 丄 02 and the second electrode 104 and the conductivity of the stainless steel of the first bolt 丄 08 and the second bolt 1, Practically speaking, the conductivity of steel is lower than that of aluminum, and the abnormal discharge will damage the surfaces of the first electrode 102 and the first electrode 104. Figure 2 and Figure 3 show the second electrode 1 Examples of damaged surfaces along the first receiving bolt hole cutter c. After time, the small aperture of the second electrode 104 appeared on the first entire surface, and the abnormal discharge occurred on the second electrode 104. The hole 106a at the damaged surface (A) was introduced into the dye. In addition, not correct In addition, when the electrode assembly 100 uses a length of
電極1 0 2和第-雷衫；>1 A 乐一電極1 0 4相互接觸的 不正常的放電，結果 、°果，第一電極1 〇 2和 之表面受到損傷。更縣 文特別的是，大量的微 一電極102和第二雷技 電極104的表面上 即產生於孔徑1 〇内，楚 第一電極102和 的表面因此而受到損傷。 一旦電極表面受刭3 & W知傷，許多顆粒從 分離，而經由第二穿別 牙礼l〇4b和第三穿 至處理室。因此，半暮 导體基板便會受到污 200305184 节放電阻礙射頻的匹配，在處理室内的等離子體會因此而 不穩定’不敎的等離子體會造成半導體基板上的圖樣或 :沈積層變得不均句。更甚者，不正常放電會縮短電極組 “勺,用壽命，也會縮短使用此種電極組件的處理裝置之 使用哥·命。 【發明内容】 本發明的目的之一係解決背景技術中所提到的問題。 因此本發明之第—目的係提供_種電極組件，纟包含一對 鄰近且相連接的第-電和第二電極’而該組件將難以發生 電弧放電。本發明之另一㈣，係提供一種製造電極組件 的方法，其在使用時不易產生電孤放電。類似纟，本發明 之另一目的係提供一種處理裝* ’其具有電極、组件，該組 件難以發生電弧放電。 、 除了電極組件之外，處理裝置具有一個處理室，在處 理室中用以處理半導體基板，放置於處理室内具有一塾^ ，其用以支撐-半導體基板’一氣體供應部件，其用以提 供處理該半導體基板之處理氣體，以及用以排出處理氣體 的排出n該處理㈣並不會與基板以及在處理過程中 產生的副產物作用，因此而控制了位於處理室内部的壓力 電極組件連接到氣體供應部件，以接收氣體供應部件 的處理氣體供應。電極組件之第—電極係連接至高頻率電 源，以將處理氣體轉換成等離子體，第一電極並具有第一 穿孔’該穿孔係經處理氣體流過。第二電極具有多個第二 200305184 穿孔，用以均勻地供應處理氣體，該處理氣體係經由第— 電極流至處理室内部。 —第一電極與第二電極可藉由例如螺拴等之一或多個固 定物而結合在一起。當第一電極與第二電極皆由鋁(川 製成時，螺栓可包含銀（A g ) ’銅（c u )，金 :(A 1 )。特別是，螺拴可由銀、銅、金或是鋁所製成， 或是由該些材料所塗覆。當第一電極由不同於第二電極之 金屬或是合金製成時，螺栓接觸電極的部分由且有導電性 ，材料所製成，而該導電性係不低於第一電極導電性與第 -電極導電性之中較低者。當第一電極包含金屬而第二電 極包含一非金屬時，螺栓 了由具有導電性之材料製成，該 螺裎之導電性係不低於第一電極之導電性。 防止弧放電之材料佔據在第—電極與第二電極之間的 =例如，冑電薄膜係***在第一電極與第二電 電:Π薄膜包含具有導電性之材料，其導電性大於第- 表面係整體塗覆—二弟一電極與第二電極之 與第二電M L 材料之導㈣大於第一電極 。 性。因此，在電極之間的電阻因而減少 填：：電弧放電之材料可包含導電膜以及填充材料，該 止電r妨㈣在至少—個電極與導電膜之間。並且，防 止電，放電材料包含一種黏著劑或是一種異向防 ，其出現在第-電極ΓΠΓΓ:微小孔徑或是凹處 弟一電之一個或兩者之相對表面上 200305184 ’以藉此清除空隙之組件]亥空隙係利於電弧的產生。結 果，非結晶形材料提供在第—電極表面與第二電極表面之 間’其中該二面係彼此面對，並且該非結晶形材料係受力 進入表面中呈現的孔洞。例如，樹脂黏著劑之膜係置放在 電極之間，並且用於加熱以及加a。#導電膜用於結合樹 月曰黏者劑時’言亥薄膜本身會因樹脂而變形並受力進入微小 凹洞或凹處。 【實施方式】 此後 說明。 ，本發明之較佳實施例將參考所附圖式而詳細的 首先參照第5圖與第6圖 具有圓盤形式之第 極係連結至㈣電源2 Q1 1㈣過處料導體基板之 處理氣體的第一穿孔2 〇 2 c，係形成在第一電極2 〇 2 勺中央邛为。圓盤形式之第二電極具有與第一電極2 〇 2 相同的半徑。第二電極2〇4具有第一表面2 ◦“，其 面向第-電極2 0 2 ’並具有沿著與第一電極2 〇 2接觸 放置的第-表面2 0 4 a週邊部分突出之結合部分2 〇 4 夕個第一穿孔2〇4c經由第二電極2〇4延伸，而 句句的整齊排列於整個第二電極之第一表面2〇“，亦 :跨越第二電極2 〇 4之中央部分2 〇 4 e，第二電極2 4係徑向朝内的位於結合部分2 〇 4 d。第二穿孔2 〇 接收机過第一穿孔2 〇 2 c的處理氣體，並且作為均 :的供應處理氣體至處理室（並未顯示 9 π 〇 ^ ^ —电 06d與第二電極2〇4整合，並且以接觸第二電極 200305184 之第二表面2 0 4 d方式放置。第三電極2 0 6具有圓盤 的形式，並且包含多個個別對應第二穿孔2 〇 4 c之第三 穿孔2 0 6 c。 較佳的是，第一電極2 〇 2和第二電極2 0 4包含鋁 (A1)，而第二電極2〇6包含石夕（Si)。並且，雖 然電極組件200已經敘述為包含第一電極2〇2，第二 電極2 〇 4和第二電極2 〇 6，電極組件可以只有利用第 一電極202和第二電極2〇4。 …一〜心股货應部分双隹乐一冤極2 2之第纟面2 〇 2 a上，使得處理氣體將會穿過第一The electrode 102 and the first thunder shirt; > 1 A The abnormal discharge of the Leyi electrode 104 in contact with each other, as a result, the surface of the first electrode 102 and the surface was damaged. More specifically, the surface of a large number of micro-electrodes 102 and second lightning electrodes 104 is generated within the aperture 10, and the surfaces of the first electrodes 102 and are thus damaged. Once the surface of the electrode was injured, many particles separated from it and passed to the processing chamber via the second pass 104b and the third pass. Therefore, the semi-dusk conductor substrate will be polluted by the 200305184 discharges that hinder the matching of radio frequency, and the plasma in the processing chamber will be unstable because of this. The unstable plasma will cause the pattern on the semiconductor substrate or: the deposition layer will become uneven. . What's more, abnormal discharge will shorten the life of the electrode group and shorten the life of the processing device using this electrode assembly. [Summary of the Invention] One of the objects of the present invention is to solve the problem in the background art. The problem mentioned. Therefore, the first object of the present invention is to provide an electrode assembly that includes a pair of adjacent and connected first and second electrodes and the electrode will be difficult to generate arc discharge. Another aspect of the present invention That is, a method for manufacturing an electrode assembly is provided, which is not easy to generate an electric solitary discharge during use. Similarly, another object of the present invention is to provide a processing device * 'which has an electrode and a component, which is difficult to generate arc discharge. In addition to the electrode assembly, the processing device has a processing chamber for processing semiconductor substrates in the processing chamber, and a processing chamber placed in the processing chamber, which is used to support-the semiconductor substrate ', a gas supply part, which is used to provide The processing gas used to process the semiconductor substrate, and the exhaust gas used to exhaust the processing gas, the processing gas does not interact with the substrate and is produced during the processing. Therefore, the pressure electrode assembly located inside the processing chamber is controlled to be connected to the gas supply part to receive the process gas supply from the gas supply part. The first electrode assembly of the electrode assembly is connected to a high-frequency power source to convert the process gas. Into a plasma, the first electrode has a first perforation, the perforation system passes through the processing gas. The second electrode has a plurality of second 200305184 perforations to uniformly supply the processing gas, the processing gas system flows through the first electrode To the inside of the processing chamber. — The first electrode and the second electrode can be joined together by one or more fixings such as bolts. When both the first electrode and the second electrode are made of aluminum (Sichuan, bolts) May include silver (Ag), copper (cu), and gold: (A1). In particular, the bolt may be made of, or coated with, silver, copper, gold, or aluminum. When the first When an electrode is made of a metal or alloy different from the second electrode, the part of the bolt contacting the electrode is made of a material having conductivity and the conductivity is not lower than that of the first electrode and the first electrode guide The lower of the electrical properties. When the first electrode contains a metal and the second electrode contains a non-metal, the bolt is made of a conductive material, and the conductivity of the screw is not lower than that of the first electrode The material that prevents arc discharge between the first electrode and the second electrode = For example, a galvanic thin film is inserted between the first electrode and the second electrical: the thin film contains a conductive material, the conductivity of which is greater than that of the first electrode -The whole surface is coated—the conductivity of the second electrode, the second electrode, and the second electric ML material is greater than that of the first electrode. Therefore, the resistance between the electrodes is reduced. Containing a conductive film and a filling material, the current stopper may be placed between at least one electrode and the conductive film. Moreover, to prevent electricity, the discharge material contains an adhesive or an anisotropy, which appears on the first electrode ΓΠΓΓ: The micro-aperture or the recess on the opposite surface of one or both of the two sides is on 200305184 'to remove the gap components] The gap is conducive to the generation of arcs. As a result, the amorphous material is provided between the first electrode surface and the second electrode surface 'wherein the two faces are facing each other, and the amorphous material is forced into the holes present in the surface. For example, a resin adhesive film is placed between the electrodes and used to heat and apply a. #Conductive film is used in combination with the tree and the adhesive agent. The film itself will be deformed by the resin and will be forced into tiny holes or recesses. [Embodiment] It will be described later. The preferred embodiment of the present invention will be described in detail with reference to the accompanying drawings. First, refer to FIG. 5 and FIG. 6. The first pole having the form of a disc is connected to a ㈣power source 2 Q1 1 ㈣processed conductor gas. The first perforation 202b is formed at the center of the first electrode 200b. The second electrode in the form of a disk has the same radius as the first electrode 2O2. The second electrode 204 has a first surface 2 ″, which faces the first electrode 2 0 2 ′ and has a bonding portion protruding along a peripheral portion of the first surface 2 0 4 a placed in contact with the first electrode 2 02. The second perforation 204c extends through the second electrode 204, and the sentences are neatly arranged on the entire first surface 20 "of the second electrode, also: across the center of the second electrode 204 The portion 204b, the second electrode 24 is located radially inwardly at the bonding portion 204d. The second perforation 2 〇 The receiver passes the processing gas of the first perforation 2 0 2 c, and supplies the processing gas to the processing chamber as shown in FIG. 9 (not shown 9 π ^ ^ ^-electricity 06d integrated with the second electrode 204 And placed in a way that contacts the second surface of the second electrode 200305184 2 4 d. The third electrode 2 0 6 has the form of a disc and contains a plurality of third perforations 2 0 corresponding to the second perforations 2 0 4 c 6 c. Preferably, the first electrode 202 and the second electrode 204 include aluminum (A1), and the second electrode 204 includes Shi Xi (Si). Also, although the electrode assembly 200 has been described as Containing the first electrode 202, the second electrode 204, and the second electrode 206, the electrode assembly can only use the first electrode 202 and the second electrode 204.… One ~ heart stock should be partially double A second pole 2 2 on the second side 2 〇 2 a, so that the processing gas will pass through the first
:孔2 〇 2 c ’多個第一螺旋孔2 〇 2 d形成在第一電相 〇 2之第-表面2 0 2b之周邊部分，該第二表面係S :且口邛刀2 0 4 d。個別對應於該第一螺旋孔2 〇 2 之多個第一組合孔2 η /1 f γ丄/ ，> 由組合部分204d延种 母個第一組合孔2 η /1 f〆 面9^ 〇4f係從第二電極204之第二表 ^ 0 4 b鑽孔裝埋，以六 ，介& 乂谷納第一螺栓2 0 8之兩個部分 亦即該螺栓的本體部分 |刀以及頭端部分。 多個第二螺旋孔2 n 二表 〇4g形成於第二電極204之第 衣面204b之周硌 開。夕< /刀，其與第一組合孔2 0 4 f分 多個個別對應於第_ ^ g ^ ^ ^ 0 〜電極2 0 4之第二螺旋孔2 0 4 極2 0 6之周邊部分延：㈣第三電極2 〇6沿著第三電 與第-組合孔2〇4f,。母個第二組合孔20“係以 二表面2 0 6 b處鑽孔J同的：式從第三電極2 0 6之第 凌埋。多個第二螺拴2 1 0係經由 12 200305184 第二組合孔206d裝人第二螺旋孔2〇“。 多個第一蓋部2 1 2係放置於第一組合孔2 0 4 f中 兹一…。 8。多個第二蓋部2 1 4係放置於 弟一組合孔2 0 6 d，以保續望-總 你”隻弟一螺栓2 1 〇。 在第一電極2〇?，筮一办L ^ 义各墙 苐二電極2 0 6，第一螺栓2 〇 8和第二螺栓21〇之接觸部分的 可能性就越低。因此，帛二1阻越低，電弧放電的 …一… 2 0 8與第二螺栓210 料成一南導電材料’例如銀（Ag)，銅（Cu)，金 一（A 或是1呂（A 1 )。或者是，第-螺栓2 0 8和第 一螺4王2 1 〇塗覆一層高導雷;祖j%\ 门导冤材枓，例如銀（A g )，銅 (Cu)，金（Au)或是鋁（Al)。― 、Λ i j 。在每一個愔中 材Γ=08和第二螺栓210包含一具有導電性的 材枓’该導電性不低於第一電極2〇2和第二電極2“ 之導電性，而可以充分預防電弧的放電。 此外，第一電極的所有表面以及第一 在泠萝道兩u 乐一電極的所有表面 主後導電性大於第一電極2 〇 2以及第二電極2 〇 4之 基礎材料的材料，以預防在第—電極2 〇 2和第二電極2 〇4之間的微小孔徑發生電弧放電。特別是，藉由將第一 電極202和第二電極204的表面塗覆_声 ( Κ Ν θ材枓，例如 銀（Ag)，銅（Cu)，或是金（Au) w ^ ^ ^ J以有效預防 異吊放電。或者是，包含高導電材料例如銀 ,p , 民 ^ A g )，鋼 (C U ) ’金（A u )之導電膜2 i 6可以放置於 極2 0 2和第二電極2 〇 4之間。 - 現在參照第5圖至第7圖，第二電極2 n j θ 电~〇4具有形成 13 200305184 在結合部分2〇4d之表面204 j之第一溝槽204h 和第二溝槽2〇4 i ，以面向第一電極202。第一溝槽 2 0 4 h沿著結合部分2 〇 4 d之内部週遭部分延伸，並 且苐二溝槽2 〇 4 i沿著結合部分2 0 4 d之外部週遭部 分延伸，同樣，第一結合洞2 0 4 f係位於第一溝槽2 0 4 h和第二溝槽2 〇 4 i之間。第一密封元件2 1 8 a和 第二密封元件2 1 8 b係個別***第一溝槽2 〇 4 h和第 二溝槽2 0 4 i ，用以預防由電弧放電在第一螺栓附近產 生的顆粒’進入到通過的氣體中。較佳的是，第一與第二 密封元件2 1 8 a和2 1 8 b係〇環形，但是可以使用不 同形式的包裝。 現在參考第8A圖，該導電膜2 1 6具有導電性大於 第一電極2 0 2以及第二電極2 0 4之導電性，並且該導 電膜2 1 6係被安置於第一電極2 〇 2以及第二電極2 〇 4之間。第一微小孔徑呈現於第一電極2 〇 2和導電膜2 1 6之間，而第二微小孔徑係位置於第二電極2 〇 4以及 導電膜2 1 6之間。雖然導電膜2 i 6減少在第一電極2 〇 2以及第二電極2 0 4之間的電阻，電弧放電仍然有可 能因為第一孔徑2 0和第二孔徑2 2而產生。 ，第一孔徑2 〇填充第一填充材料3: A hole 2 0 2 c 'a plurality of first spiral holes 2 0 2 d are formed in a peripheral portion of the first -phase 2 0 2 b of the first electrical phase 0 2, the second surface is S: and the mouth knife 2 0 4 d. The plurality of first combination holes 2 η / 1 f γ 丄 / corresponding to the first spiral hole 2 02 are individually seeded by the combination portion 204d and the mother first combination holes 2 η / 1 f〆 face 9 ^ 〇4f is drilled and buried from the second table ^ 0 4 b of the second electrode 204, and the two parts of the first bolt 208, which is the < > Head end part. A plurality of second spiral holes 2n and 2g are formed on the periphery of the second garment surface 204b of the second electrode 204. Xi < / knife, it is divided with the first combination hole 2 0 4 f, corresponding to the _ ^ g ^ ^ ^ 0 ~ the second spiral hole 2 0 4 of the electrode 2 0 4 and the peripheral part of the pole 2 0 6 Yan: ㈣The third electrode 206 is along the third electric-and-combination hole 204f. The female second combination hole 20 is drilled at the second surface 2 0 6 b with the same: the formula is buried from the third electrode of the second electrode 6 06. A plurality of second bolts 2 1 0 are passed through 12 200305184 The two combined holes 206d are fitted with a second spiral hole 20 ". The plurality of first cover portions 2 1 2 are placed in the first combination hole 2 0 4 f. 8. A plurality of second cover portions 2 1 4 are placed in the combination hole of the second one 2 0 6 d, in order to keep looking-always you "only the first one of the bolts 2 1 0. At the first electrode 20, the first one L ^ The two electrodes 206 of the Italian wall, the lower the possibility of the contact between the first bolt 2 0 8 and the second bolt 21 0. Therefore, the lower the resistance of the 2 1 and the arc discharge ... 1 ... 2 0 8 A south conductive material is formed with the second bolt 210, such as silver (Ag), copper (Cu), gold one (A or 1 Lu (A 1). Or, the first bolt 2 0 8 and the first screw 4 king 2 1 〇 Apply a layer of high-conductance mine; ancestor j%, such as silver (Ag), copper (Cu), gold (Au), or aluminum (Al). ― Λ ij A sintered material Γ = 08 and the second bolt 210 include a conductive material. The conductivity is not lower than that of the first electrode 202 and the second electrode 2 ″, and the arc discharge can be fully prevented. In addition, all the surfaces of the first electrode and all surfaces of the first and second electrodes in Lingluo Road are more conductive than the base material of the first electrode 202 and the second electrode 204 to prevent The first-electricity An arc discharge occurs at a minute pore size between 2 〇2 and the second electrode 204. In particular, by coating the surfaces of the first electrode 202 and the second electrode 204 with a sound (K Ν θ material, such as silver ( Ag), copper (Cu), or gold (Au) w ^ ^ ^ J to effectively prevent different hanging discharges. Or, it contains highly conductive materials such as silver, p, min ^ Ag), steel (CU) 'gold The conductive film 2 i 6 of (A u) can be placed between the electrode 202 and the second electrode 2 0.-Now referring to FIGS. 5 to 7, the second electrode 2 nj θ electricity ~ 〇4 has a formation 13 200305184 The first trench 204h and the second trench 204i on the surface 204 j of the bonding portion 204d face the first electrode 202. The first trench 2 0 4 h runs along the bonding portion 2 04 The inner periphery of d partially extends, and the second groove 2 0 4 i extends along the outer periphery of the joint portion 2 0 4 d. Similarly, the first joint hole 2 0 4 f is located in the first groove 2 0 4 h And the second groove 2 0 4 i. The first sealing element 2 1 8 a and the second sealing element 2 1 8 b are individually inserted into the first groove 2 0 4 h and the second groove 2 0 4 i, To prevent electricity Particles generated near the first bolt by the discharge enter the passing gas. Preferably, the first and second sealing elements 2 1 8 a and 2 1 8 b are ring-shaped, but different forms of packaging can be used. Referring now to FIG. 8A, the conductive film 2 1 6 has higher conductivity than the first electrode 2 2 and the second electrode 2 0 4, and the conductive film 2 1 6 is disposed on the first electrode 2 0 2 And between the second electrode 204. The first micro-aperture is present between the first electrode 202 and the conductive film 2 16, and the second micro-aperture is positioned between the second electrode 204 and the conductive film 2 16. Although the conductive film 2 i 6 reduces the resistance between the first electrode 202 and the second electrode 204, an arc discharge may still occur due to the first aperture 20 and the second aperture 22. , The first aperture 2 is filled with the first filling material 3
參考第8 B圖， 因此，導電膜2 1 14 200305184 第一孔徑，使得對應於第一孔徑之放電空間不再存在，並 且第二孔徑2 2由變形後之導電膜2丄6 a所佔據，使得 對應於第二孔徑之放電空間不再存在。 、參考第8 Cii，第二孔徑2 2可以以第二填充材料3 2代替填充，以類似於參考第8 B圖所敘述的方式，第一 隸2 〇由變形後之導電膜2 1 6 a所佔冑，使得對應於 第一孔徑之放電空間不再存在，而第二孔徑2 2由第二填 充材料所填充，使得對應於第二孔徑之放電空間不再存在 〇 然而，由第8 B圖與第8 C圖所示，當第一孔徑2 〇 和第一孔徑2 2被變形後之導電膜2 1 6 a所填充，對應 於第一與第二孔徑2 0和2 2之放電空間沒有被充分的移 除，因此，如第8 D圖所顯示者，第一孔徑2 〇和第二孔 亡2 2車乂佳的係個別由第一與第二填充材料3 〇和3 2 填充。 第一填充材料3 〇以及第二填充材料3 2可以是施加 在導電膜2 1 6之一側或二側的粘著劑，粘著劑可以是熱 才、十月曰例如環氧化物，聚氨酯，或是a c r y 1樹脂， 忒粘著劑也可以是熱塑膠樹脂，例如聚乙烯或是聚丙烯樹 脂。該點著劑可以是帶狀，熱固樹脂的粘著薄膜或是熱固 塑膠樹脂可以個別的位於第一電極2 〇 2和導電膜2工6 之間，第一電極2 〇 2以及第二電極2 0 4之後在攝氏1 6 〇度至1 8 0度之間的溫度範圍内被加壓1 0至2 0秒 。結果’填充粘著劑之第一孔徑2 〇和第二孔徑2 2使得 15 200305184 對應於第一孔徑2 0和第二孔徑2 2的放電空間不再存在 。從第一電極2 0 2和第二電極2 〇 4側邊滲出的粘著劑 最好移除。 第9 A圖和第9 B圖顯示出根據本發明另一實施例的 電極組件之第一電極和第二電極。 參考第9A圖，形成在第一電極202和第二電極2 0 4之間的微小孔徑（參考弟4圖）由填充材料4 〇填充 ’以預防電弧放電的發生。較佳的是，填充材料係一種钻 著劑。在一種實施例中，熱固樹脂或是熱塑膠樹脂的粘著_ 劑直接放置於第一與第二電極2 〇 2和2 0 4之間，然後 對第一電極2 0 2以及第二電極2 0 4加壓與加熱。枯著 薄膜被施壓進入孔徑之間。結果，放電空間不再存在，因 此可以預防電弧放電。在此實施例中，第一電極2 〇 2以 及第二電極2 0 4較佳塗覆一層金屬，該金屬的導電性大 於第一電極2 0 2以及第二電極2 0 4的導電性。 在第9 B圖中的實施例，形成在第一電極2 〇 2以及 苐一電極2 0 4之間的微小孔徑填充一種異向性導電薄膜 _ 5 0 (此後參照為A C F ) 。A C F 5 0包含由粘著劑5 4隨機發散的導電粒子5 2。枯著劑5 4可以是例如環氧 化物，聚氨酯的熱固樹脂，或是丙烯酸樹脂，或是例如聚 乙烯或是聚丙烯的熱塑膠樹脂， 當ACF 5 0位於第一電極2 0 2以及第二電極2 〇 4之間，而第一電極2 0 2以及第二電極2 0 4在攝氏1 6 0度至1 8 0度之間的溫度範圍内加壓1 〇至2 〇秒， 16 200305184 則微小孔徑係被粘著劑5 4所填充。此外，第一電極2 〇 2以及第二電極2 0 4由導電粒子5 2導電性連接。在此 導電粒子5 2的導電性較佳係大於第一電極2 〇 2以及第 二電極2 0 4的導電性，使得在第一電極2 〇 2以及第二 電極2 0 4之間的電阻降低。 因為導電膜2 1 6或是導電粒子5 2的導電性大於第 電極2 0 2以及第二電極2 〇 4的導電性，故而防止了 第電極2 0 2以及第二電極2 〇 4之間的電弧放電。以 減低在第一電極2 〇 2以及第二電極2 0 4之間的電阻。 並且’微小孔徑不再存在於第一電極2 〇 2以及第二電極 204之間，因此第一電極2〇2以及第二電極204之 間的電弧放電可以完全的預防。 第1 0圖說明根據本發明電極組件3 〇 〇之另一實施 例。 多考弟10圖，第一電極302具有圓盤的形狀，並 且連接至RF電源3 〇 i。處理半導體基板之處理氣體係 、厂由第牙孔3 0 2 c通過，第一穿孔係在第一電極3 〇 2之中央部分形成。第二電極3 0 4具有與第一電極3 〇 2相同半徑的圓盤形式。第二電極304具有面向第一電 極3〇2的第-表面3〇4a，以及沿著第一表面3〇4 a之周圍部分突出的結合部分3 〇 4 d係與第一電極3 〇 2接觸。多個第二穿孔304c經由第二電極3〇4延伸 句勻的排列於第一表面3 0 4 a上，亦即通過第二電極 3 〇 4之徑向的朝向結合部分3 〇 4 d的中央部分3 〇 4 17 200305184 e ° 用以供應處理氣體之氣體供應部分放置在第一電極3 0 2之第一表面3 〇 2 a上，使得處理氣體將會流經第一 穿孔3 0 2 c，多個第一螺旋孔2 〇 2 d形成在第一電極 3 0 2之第二表面3 〇 gb之周邊部分，該第二表面係面 向於組合部分3 〇 4 d。個別對應於該螺旋孔之多個第— 組合孔經由組合部分3 〇 4 d延伸，每個組合孔係從第二 電極3 0 4之第二表面3 〇 4 b鑽孔裝埋，以容納第_螺 栓2 0 8之兩個部&，亦即該螺栓的本體部分以及頭端部 刀夕個蓋口p 3 1 2係係位於組合孔内，用以保護每個 栓 3 0 8。 一 u ^ 口〜状啊卻分的電阻 低’電弧放電的可能性就越低。因此，每個螺栓 以一南導電材料形成，例如銀（A g )，銅（c u )， (=U )或是紹（A 1 )。或者是，螺栓3 〇 8塗覆-高綱料，例如銀（Ag)，銅（Cu) 或疋紹（A 1 )。在每—個情況#，螺栓8勺人 有導電性的材料，該㈣性不低 匕卜: 性’因此可以充分預防電弧的放電。叫〇2之導1 以Jrr〇4具有形成在結合部分30“之“ 以面向弟一電極3 〇 2。第一 — 之表i 之内部週遭部分延伸，並且第二二=合部分3 0 4 d 分3…之外部週遭部分延伸二m著結合部 於第一溝槽和第二溝槽之間。第一…合洞係位 在封元件3 1 8 a和第 18 200305184 二密封元件3 1 8 b係個別***第一溝槽和第二溝槽，用 以預防由電弧放電在螺栓3 0 8附近產生的顆粒，進入到 流過的氣體中。較佳的是，第一與第二密封元件3 1 8 a 和3 1 8 b係〇環形，但是可以使用不同形式的包裝。 第1 1圖顯示一種處理裝置，包含顯示餘地5圖之電 極組件2 0 0，用以處理半導體基板w。 參考第1 1圖，該處理裝置具有一個用以處理半導體 基板W之處理室4 0 0，一塾塊4 0 2置放於處理室内， 其用以支撐該半導體基板W，一電極組件2 〇 〇置放於該 處理室4 0 0之上部分，用以供應處理氣體至處理室4 〇 〇内，並且用以將處理氣體轉換成等離子體，並包含一氣 體供應部件4 1 2，其中該處理氣體係供應至該電極組件 2 0 〇。電極組件2 0 0連接至射頻電源，真空泵4 〇 4 係連接至該處理室之一側，經由一出口線路4 〇 6排放在 處理半導體基板期間產生的附加產物以及在處理期間留存 於處理室4 0 0中不反應的處理氣體。壓力控制閥4 〇 8 係安裝於出口線路4 0 6，以控制在處理室中的壓力，門 4 1 〇置放於處理室4 0 0之另一側，用以允許傳送半導 體基板至該處理室4 〇 〇或從其傳送出來。同樣，墊塊4 0 2係在負載位置與非負載位置之間移動，而該安裝後之 位置係置放處理過之半導體基板。 電極組件2 0 〇之第一電 成，而第三電極由矽所製成。 第一螺栓2 0 8，以及連接第 極與第一電極由銘（A 1 )製 連接第一電極與第二電極之 二電極與第三電極之第二螺 200305184 权2 1 〇可由鋁（A 1 )製成。然而，第一與第二螺栓2 〇 5與2 1 〇較佳包含具有大於鋁之導電性的金屬，或者是 由例如銀’鋼，金或是料高導電性之金屬所塗覆之不錄 鋼所製成。 ，上述之處理裝置可用於執行一沉積過程，用以沉積在 半導體基板上之材料層，或是用以執行—㈣過程，移除 坠已經形成在半導體基板上之材料。基板之溫度和處理 室内之塵力係根據是否執行沉積過程或是蝕刻過程而設立 〇 沉積過程之一示範例如下。半導體基板w係位於墊塊 4 0 2上，多晶矽層先前已經形成於半導體基板上。基板 W加熱至攝氏6 0 〇度，而處理室之壓力設定於1 2 5 〇 陶爾。射頻電源供應致電極組件2 〇 〇，而該處理氣體經 由氣體供應部件4 1 2以及電極組件2 〇 〇供應至處理室 4 0 0内部。處理氣體可包含四氫化矽（s丨Η4)以及 六氟化鶴（W F 6 )，並且藉由供應至電極組件2 〇 〇之 射頻電源轉換為等離子體。等離子體將多晶石夕層之一部分 轉換為矽化物，而矽化物轉換成為在半導體基板上的鎢矽 化物。 蝕刻過程之一示範例如下。半導體基板w係位於處理 室4 0 0之墊塊4 0 2上，多晶矽層和作為蝕刻罩之光阻 圖樣先前已經形成於半導體基板上，處理室之壓力設定於 1 0 0毫陶爾，6 0 0瓦特之射頻電源供應於該·電極2 〇 〇，隨後，例如C H F 3和c F 4之處理氣體經由氣體供 20 200305184 應部件4 1 2以及電極組件2 〇 〇供應至處理室4 〇 〇内 部。因此，部分氧化層被姓刻，特別&，一接觸孔形成在 氧化層。 在上述之沉積過程或是蝕刻過程期間，等離子體僅包 含極少量的微粒污染物，因為電極組件2 〇 〇之高= 構構件和導電膜預防發生電弧放電。因此處 : A:為等離子體，並且高品質之半導體基板可在= 為了評估電極組件之性能，數個實驗執行 ° 形成自校準接觸孔之飯刻過程（此後參照為s 係利用具有習知電極組件（第一電極組件 執行。特別是’習知電極組件包含紹製之第一^置所 ，石夕製之第三電極，以及連接第-，第二及第：：二電極 鱗鋼螺栓。另外，SAC㈣過程之另_=；電極之不 :本發明之電極組件的⑽置所執行：::内有根 栓連接第一，第二與第三電極。 成’鋁製之螺 該s A C蝕刻過程從2 〇 〇 i 〇 0 1年1 〇月2 8曰，留存於基板 :執行至2 _Kla-Te_r公司所生產之散射粒子測量=目利用由 貫驗結果顯示於第1 2 a圖。 、二、、、所測量， 2 形成具有-圓柱狀堆疊（此後 勺υ L s )結構之 21 200305184 電容的姓刻過程係利用且有A垂 /、有在只驗1敘述過之習知電極 件（第-電極組件）之蝕刻穿 跟，且 鄉詞展置所執行，形成〇c S電容 之蝕刻過程也由敘述於膏铪Ί ……“ 具有根據本發明之電極組 件的蝕刻裝置所執行， 該〇C S蝕刻過程從2 〇 υ丄年6月4曰執行至？ π 0 1年1 0月2 8曰，留存於美h ^ ° 、土板上之粒子數目利用由美 國Kla-Tencor公司所吐吝+ ϋ心 ^ 產之政射粒子測量系統所測量，實 驗結果顯示於第i 2 Β圖。 耳 實驗3 S A C姓刻過程利用具有 此— — 弟一電極組件之蝕刻裝置所 執行，如貫驗1中所敘述。另 卜 S A C I虫刻過程也由呈 有根據本發明之另一電極組件 f也由 置所執仃，第三電極組件包含 ^ 制 > 仿—^ 表之第一與第二電極，矽 製之第二電極，以及連接第一，-一 總^ 乐一及第三電極之不銹鋼 螺柽，以及置放於第一電極多馀 。 i極和第二電極之間的銅之導電膜 該S A C蝕刻過程從2 π η 1 & 2 0 0 2年年11月16曰執行至 」UU2年2月17曰，留存於其 美國Kla-T_r公司所生產之：上之粒子數目利用由 實驗結果顯示於第12c圖政射粒子測量系統所測量， 實驗4— .〇C S i虫刻過程係利用且古 具有在實驗1敘述過之第二雷 極組件的蝕刻裝置所執行，另冰 ^ 4 七么 另外，〇C S蝕刻過程也由且 有敘述於實驗3中之第三電極龟株 八 、、且件的蝕刻裝置所執行， 22 200305184 該0Cs触刻過程從2〇〇1年11月16日執行至 2002年2Θ17曰，留存於基板上之粒子數目利用由 美國K ia-Tencor公司所生產之散射粒子測量系統所測量， 實驗結果顯示於第1 2 D圖。 實驗5 s A C蝕刻過程和0 c S蝕刻過程皆利用具有實驗工 中所敘述之第一電極組件之蝕刻裝置所執行。 該S A C和〇C S蝕刻過程從2 〇 〇丄年9月2 4日 執行至2001年1◦月20曰’留存於基板上之粒子數 目利用由美國Kla-Tenc。!·公司所生產之散射粒子測量系統 所測量，實驗結果顯示於第1 3 A圖。 實驗β S A C#刻過程和0 c S姓刻過程皆利用具有實驗丄 中所敘述之第二電極組件之蝕刻裝置所執行。 該S A C和〇C S蝕刻過程從2 〇 〇 1年9月2 4日 執行至2001年10月20日，留存於基板上之粒子數 目利用由美國Kla-Tencor公司所生產之散射粒子測量系統 所測量，實驗結果顯示於第1 3 B圖。 參考第1 2A圖和1 2B圖’圖示之左邊部分（至虛 線B的左方）顯示當利用具有第一習知電極組件之蝕刻裝 置執行S A C#刻過程和〇C S蝕刻過程的粒子數目，其 中圖示右邊部分（至虛線B之右方）顯示當利用具有第二 電極組件之蝕刻裝置執行S A C蝕刻過程和〇c s蝕刻過 程的粒子數目，圖示之關鍵標記指示在實驗中使用的蝕刻 23 200305184 裝置的序號。 邊部分，顯果可從圖不中看出，比較圖示之左邊與右 和螺栓之^"使用根據本發明之電極組件，在電極組件 ^間的電弧放電減少了。 第 1 〇 丄Z C和1 2 D圖同樣晶黃千太恭明+ μ田 左邊部分（至…… 效果，圖示之 件之蝕列駐 ）顯示當利用具有第二電極組 子數目：置執行SAC敍刻過程和ocs㈣過程的粒 之㈣L中圖示右邊部分顯示當利用具有第三電極組件 數目，㈣ 餘刻過程和0㈡姓刻過程的粒子 裝置的序號的’圖不之關鍵標記指示在實驗中使用的钮刻 :較圖示之左邊部分和右邊部分，顯示使用A ' 電極組件和螺栓之間的電弧放電。 刻裝示當利用具有第—（習知）電極組件之钱 執仃SAC㈣過程和〇cs㈣過程的粒子數目 =1 3 B圖顯示當利用具有第二電極組件之姓刻裝置 仃A C蝕刻過程和〇 C S蝕刻過程的粒子數目。 同樣的，由第13A和第13B圖可分辨出通過率， 、過率定義為顆粒數目比上基板數目係小於可允許之 數與基板之整體數基板數目的比值，當使用 :件之㈣裝置時，通過率約為51%，原因可歸咎：:： $的電弧放電。然而當使用具有第二電極組件之钱刻裝置 時’通過率大幅改善為9 5% ’因為電弧放電已被抑：。 同樣的’當使用習知電極組件時在基板上之平均粒子數為 24 200305184 2 3，而當使用第二電極組件時在基板上的粒子數為8。 根據本發明，具有多個導電性不低於其連接之電極的 導電性之螺检，而防丨卜太雪士τς j丄田 向丨方止在電極和螺栓之間的電弧放電，具 有導電性大於電極導電性之導電膜置放於電極之間，也同 樣預防電極之間的電弧放電。形成在導電膜與電極之間和 電極彼此之間的填充材料，填充了微小孔徑，而清除了組 牛之放電工間，而兀全預防了導電膜和電極之間的電弧放 電，以及電極之間的電弧放電。因此電極組件並不會產生 污染基板之粒子，而用以處理半導體基板之處理氣體可以 被電極組件穩定的轉換為等離子體。 _最後雖然本务明已經詳細敘述在上，可在其中做不 同的改變和替代或變異’而不會背離由所附之申請專利範 圍所定義之本發明的之精神與範疇。 【圖式簡單說明】 1 ·圖示部分 本發明上述以及其它的目的，特徵與優點將隨著隨後 之本發明的較佳實施例詳細說明’以及參考所附圖示，而 更加明顯，其中： 第1圖係習知電極組件的剖視圖； 第2圖係一照片，其顯示習知電極組件被異常放電所 損壞的表面； 第3圖係第2圖照片之部分Α的放大視圖； 第4圖係第1圖顯示之第一電極與第二電極接觸部分 的放大視圖； 25 200305184 實施例的剖面視圖 第5圖係根據本發明電極組件之 圖； 第6圖係第五®巾顯示之電極組件的分解立體 第7係顯示於第5圖中之電極組件的第二電極V立體 第8 A至8 D圖係顯示於第5圖中的電極組件之 電極和第二電極之接觸部分的放大視圖； 第9 A至9 B圖係根摅太路日 ^ 课本發明另一貫施例的電極組件 之第一電極和第二電極接觸部分的放大視圖； 第1 0圖係根據本發明另，實施例之電極組件 視圖； σ 第1 1圖係一處理裝置的概要圖解，其用以處理根據 本發明之一半導體基板； 第1 2 Α至1 2 D圖係顯示在第i i圖所顯示的處理 裝置執行的蝕刻過程中產生的粒子數目的圖表； 第1 3 A至第1 3 B圖係顯示在第1 1圖顯示的處理 裝置執行蝕刻過程中產生的粒子通過率以及粒子數目的圖 表。 2 ·元件代表符號 1 0 0電極組件 1 0 1 RF電源 1 0 2第一電極 l〇2a第一穿孔 1 0 4第二電極 26 200305184 1 0 4 a耦合部分 l〇4b第二穿孔 1 〇 4 C第一容納螺栓孔 1 0 6第三電極 106a第三穿孔 1 0 8第一螺栓 1 1 0第二螺栓 2 0 0電極組件 2 0 1射頻電源 202c第一穿孔 2 0 4第二電極 204a第一表面 2〇4b第二表面 204c第二穿孔 2 0 4 d結合部分 2 04 e第二電極之中央部分 2 0 4 h第一溝槽 2 0 4 i第二溝槽 2 0 4 j表面 2 0 6第三電極 206c第三穿孔 2 0 8第一螺栓 2 1 0第二螺栓 2 1 2第一蓋部 27 200305184 2 1 4第二蓋部 2 1 6導電膜 2 1 6 a導電膜 2 1 8 a第一密封元件 2 1 8 b第二密封元件 2 0第一孔徑 2 2第二孔徑 3 0第一填充材料 3 2第二填充材料 3 0 0電極組件 3 0 1 R F電源 3 0 2第一電極 3 0 2 c第一穿孔 3 0 4第二電極 3 04 a第一表面 304c第二穿孔 3 0 4 d結合部分 304e中央部分 3 0 4 i第二溝槽 3 0 8第一螺栓 3 1 8 a第一密封元件 3 1 8 b第二密封元件 4 0 0處理室 4 0 2墊塊 28 200305184 4 0 4真空泵 4 0 6出口線路 4 0 8壓力控制閥 4 1 0門 4 1 2氣體供應部件Referring to FIG. 8B, therefore, the first aperture of the conductive film 2 1 14 200305184 makes the discharge space corresponding to the first aperture no longer exist, and the second aperture 22 is occupied by the deformed conductive film 2 丄 6 a. The discharge space corresponding to the second aperture no longer exists. With reference to the 8th Cii, the second aperture 22 can be filled with the second filling material 32, in a manner similar to that described with reference to FIG. 8B, the first electrode 2 is formed by the deformed conductive film 2 1 6 a The occupied space makes the discharge space corresponding to the first aperture no longer exist, and the second aperture 22 is filled with the second filling material, so that the discharge space corresponding to the second aperture no longer exists. However, by the 8th B As shown in Fig. 8C, when the first aperture 20 and the first aperture 22 are filled with the deformed conductive film 2 1 6 a, the discharge spaces corresponding to the first and second apertures 20 and 22 are filled. Not fully removed, therefore, as shown in Fig. 8D, the first aperture 20 and the second aperture 22 are both filled with the first and second filler materials 3 0 and 3 2 respectively. . The first filler material 3 0 and the second filler material 3 2 may be adhesives applied to one or both sides of the conductive film 2 1 6. The adhesives may be thermal, for example, epoxy, polyurethane Or acrylic 1 resin, the adhesive can also be a thermoplastic resin, such as polyethylene or polypropylene resin. The spotting agent may be in the form of a strip, and an adhesive film of thermosetting resin or a thermosetting plastic resin may be individually located between the first electrode 202 and the conductive film 2, and the first electrode 200 and the second electrode The electrode 20 is then pressurized for 10 to 20 seconds in a temperature range between 160 and 180 degrees Celsius. As a result, the first pore diameter 20 and the second pore diameter 22 of the filled adhesive make 15 200305184 the discharge space corresponding to the first pore diameter 20 and the second pore diameter 22 no longer exist. It is best to remove the adhesive that has leaked from the sides of the first electrode 202 and the second electrode 204. 9A and 9B show a first electrode and a second electrode of an electrode assembly according to another embodiment of the present invention. Referring to FIG. 9A, a minute aperture (refer to FIG. 4) formed between the first electrode 202 and the second electrode 204 is filled with a filling material 40 to prevent the occurrence of an arc discharge. Preferably, the filler material is a drilling agent. In one embodiment, the adhesive of the thermosetting resin or the thermoplastic resin is directly placed between the first and second electrodes 202 and 204, and then the first electrode 202 and the second electrode 2 0 4 Pressurized and heated. The dry film is pressed between the apertures. As a result, the discharge space no longer exists, so that arc discharge can be prevented. In this embodiment, the first electrode 202 and the second electrode 204 are preferably coated with a layer of metal, and the conductivity of the metal is greater than that of the first electrode 202 and the second electrode 204. In the embodiment in FIG. 9B, a micro-aperture formed between the first electrode 202 and the first electrode 204 is filled with an anisotropic conductive film _50 (hereinafter referred to as A C F). A C F 5 0 contains conductive particles 5 2 randomly dispersed by the adhesive 5 4. The desiccant 54 may be a thermosetting resin such as epoxide, polyurethane, or an acrylic resin, or a thermoplastic resin such as polyethylene or polypropylene. When the ACF 50 is located at the first electrode 202 and the first electrode Between two electrodes 2 0 4 and the first electrode 202 and the second electrode 2 0 4 are pressurized in a temperature range of 160 to 180 degrees Celsius for 10 to 20 seconds, 16 200305184 Then, the minute pores are filled with the adhesive 54. The first electrode 202 and the second electrode 204 are electrically connected by the conductive particles 52. Here, the conductivity of the conductive particles 52 is preferably larger than that of the first electrode 202 and the second electrode 204, so that the resistance between the first electrode 202 and the second electrode 204 is reduced. . Since the conductivity of the conductive film 2 1 6 or the conductive particles 5 2 is greater than that of the first electrode 202 and the second electrode 2 0 4, the contact between the second electrode 2 02 and the second electrode 2 0 4 is prevented. Arc discharge. In order to reduce the resistance between the first electrode 202 and the second electrode 204. Moreover, the 'micro-aperture no longer exists between the first electrode 202 and the second electrode 204, so the arc discharge between the first electrode 202 and the second electrode 204 can be completely prevented. Fig. 10 illustrates another embodiment of the electrode assembly 300 according to the present invention. As shown in FIG. 10, the first electrode 302 has a disc shape and is connected to an RF power source 301. A processing gas system for processing a semiconductor substrate is passed through the second tooth hole 3 0 2 c, and a first perforation is formed in a central portion of the first electrode 3 02. The second electrode 3 0 4 has the form of a disk having the same radius as the first electrode 3 2. The second electrode 304 has a first surface 304a facing the first electrode 302, and a bonding portion 304d protruding along the peripheral portion of the first surface 304a is in contact with the first electrode 304. . The plurality of second perforations 304c are evenly arranged on the first surface 3004a through the second electrode 3004 extension, that is, the radial direction of the second electrode 300 is toward the center of the bonding portion 3004d. Part 3 〇4 17 200305184 e ° The gas supply part for supplying the processing gas is placed on the first surface 3 002 a of the first electrode 3 02 so that the processing gas will flow through the first perforation 3 0 2 c, A plurality of first spiral holes 2 0 2 d are formed at a peripheral portion of the second surface 3 0 gb of the first electrode 3 2 2, and the second surface faces the combined portion 3 4 4 d. The plurality of combination holes corresponding to the spiral holes individually extend through the combination portion 3004d, and each combination hole is drilled and buried from the second surface 3004b of the second electrode 3004 to accommodate the first The two parts of the bolt 2 0 8 & that is, the body part of the bolt and the head end p 3 1 2 are located in the combination hole to protect each bolt 3 0 8. The lower the resistance, the lower the probability of an arc discharge. Therefore, each bolt is formed of a south conductive material, such as silver (Ag), copper (cu), (= U), or Shao (A1). Alternatively, the bolt 308 is coated with a high-grade material, such as silver (Ag), copper (Cu), or aluminum (Al). In each case #, 8 bolts of bolts have a conductive material, and this property is not low. Therefore, the electric arc can be fully prevented. The guide 1 called 〇2 is formed by Jrr〇4 having 30 "of the bonding portion so as to face the second electrode 302. The inner periphery of the first-table i extends partly, and the outer periphery of the second two = combined part 3 0 4 d minus 3 ... extends two m with a joint between the first trench and the second trench. The first ... coming hole is located at the sealing element 3 1 8 a and the 18th 200305184. The second sealing element 3 1 8 b is inserted into the first groove and the second groove separately to prevent arc discharge near the bolt 3 0 8 The resulting particles enter the flowing gas. Preferably, the first and second sealing elements 3 1 8 a and 3 1 8 b are 0-ring shaped, but different forms of packaging can be used. Fig. 11 shows a processing device including an electrode assembly 200 with a margin of 5 images for processing a semiconductor substrate w. Referring to FIG. 11, the processing apparatus has a processing chamber 400 for processing a semiconductor substrate W, and a block 402 is placed in the processing chamber to support the semiconductor substrate W and an electrode assembly 2. 〇Placed on the processing chamber 400, for supplying the processing gas to the processing chamber 400, and for converting the processing gas into a plasma, and including a gas supply part 4 12 A process gas system is supplied to the electrode assembly 200. The electrode assembly 2000 is connected to the RF power source, and the vacuum pump 4 04 is connected to one side of the processing chamber, and an additional product generated during the processing of the semiconductor substrate is discharged via an outlet line 4 and retained in the processing chamber 4 during the processing. Unreacted process gas in 0 0. The pressure control valve 4 08 is installed on the outlet line 4 06 to control the pressure in the processing chamber. The door 4 10 is placed on the other side of the processing chamber 4 0 0 to allow the semiconductor substrate to be transferred to the process. Chamber 400 or teleported from it. Similarly, the pad 402 is moved between a loaded position and a non-loaded position, and the mounted position is where the processed semiconductor substrate is placed. The first electrode of the electrode assembly 200 is formed, and the third electrode is made of silicon. The first bolt 2 0 8 and the second screw connecting the first electrode and the first electrode made of the inscription (A 1) and connecting the two electrodes of the first electrode and the second electrode to the third electrode 200305184 The right 2 1 〇 can be made of aluminum (A 1) Made. However, the first and second bolts 205 and 2 1 0 preferably contain a metal having a conductivity greater than that of aluminum, or are coated with, for example, silver 'steel, gold, or a highly conductive metal. Made of steel. The above-mentioned processing device can be used to perform a deposition process for depositing a material layer on a semiconductor substrate, or to perform a process for removing material that has been formed on a semiconductor substrate. The temperature of the substrate and the dust in the processing chamber are set according to whether a deposition process or an etching process is performed. One example of the deposition process is as follows. The semiconductor substrate w is located on the pad 402, and a polycrystalline silicon layer has been previously formed on the semiconductor substrate. The substrate W is heated to 600 ° C, and the pressure in the processing chamber is set to 125 ° Tao. The RF power supply causes the electrode assembly 2000, and the processing gas is supplied to the inside of the processing chamber 400 through the gas supply part 4 12 and the electrode assembly 2000. The processing gas may include silicon tetrahydrogen (S4) and hexafluoride (WF6), and is converted into a plasma by a radio frequency power supply supplied to the electrode assembly 2000. The plasma converts a portion of the polycrystalline layer to silicide, and the silicide is converted to tungsten silicide on a semiconductor substrate. An example of the etching process is as follows. The semiconductor substrate w is located on the pad 402 in the processing chamber 400. A polycrystalline silicon layer and a photoresist pattern as an etching mask have been previously formed on the semiconductor substrate. The pressure in the processing chamber is set to 100 millitorr, 6 0 0 Watt RF power is supplied to the electrode 2000, and subsequently, processing gases such as CHF 3 and c F 4 are supplied to the processing chamber 4 200 through the gas supply 20 200305184 application component 4 12 and the electrode assembly 2000. internal. Therefore, a part of the oxide layer is engraved, and in particular, a contact hole is formed in the oxide layer. During the above-mentioned deposition process or etching process, the plasma contains only a very small amount of particulate contamination, because the height of the electrode assembly 2000 = the structural member and the conductive film prevent the occurrence of arc discharge. Therefore: A: It is a plasma, and a high-quality semiconductor substrate can be used in order to evaluate the performance of the electrode assembly. Several experiments are performed to form a self-calibrating contact hole (hereinafter referred to as s) using a conventional electrode. The assembly (the first electrode assembly is executed. In particular, the "known electrode assembly" includes a first electrode system made in Shaoxing, a third electrode made in Shixi, and a two-electrode scale steel bolt connected to the first, second, and ::. In addition, the other of the SAC process is _ =; the difference between the electrodes: the electrode assembly of the present invention is performed: :: the root plug is connected to the first, second and third electrodes. The etching process is from 2000i 2001 to October 28, 2011, and it is retained on the substrate: it is performed until the measurement of scattering particles produced by the company Kla-Te_r is performed. The results are shown in Figure 12a. ， 二 、、、 Measured, 2 forms 21-cylinder stack (hereafter υ L s) 21 200305184 The last name engraving process of the capacitor is used and has A vertical /, there is a conventional electrode described in only test 1 Piece (the -electrode assembly) is etched through The etching process performed to form a OC capacitor is also described in the paste ... "The etching device having the electrode assembly according to the present invention is performed, and the OCCS etching process is performed from June 4, 2000 To? Π 01, October 28, 2001, the number of particles remaining on the ground h ^ °, the number of particles on the soil plate was measured by the U.S. Kla-Tencor company vomit + ϋ heart ^ produced by the government shot particle measurement system, The experimental results are shown in Figure i 2 Β. Ear experiment 3 The SAC surname engraving process is performed using an etching device with this --- electrode assembly, as described in Run 1. The SACI insect engraving process is also presented by According to another electrode assembly f of the present invention, the third electrode assembly includes the first and second electrodes of the ^-> table, the second electrode of silicon, and the first,- A total ^ Leyi and the third electrode of the stainless steel screw, and more than placed on the first electrode. Copper conductive film between the i and the second electrode The SAC etching process from 2 π η 1 & 2 0 Executing until November 16, 2002. "February 17, UU2, retained in its U.S. Kla- The number of particles produced by T_r company is measured by the experimental results shown in Figure 12c. The particle measurement system is used in Experiment 4—.CSCS insect engraving process is used and the ancient has the second described in Experiment 1. The etching device of the thunder pole assembly is performed separately, and the ice etching process is also performed by the etching device of the third electrode of the third electrode, which is described in Experiment 3, 22 200305184 This The 0Cs touch engraving process was performed from November 16, 2001 to 2Θ17, 2002. The number of particles remaining on the substrate was measured using a scattering particle measurement system produced by the United States Kia-Tencor Corporation. The experimental results are shown in Figure 1 2 D. Both the 5 s AC etching process and the 0 c S etching process were performed using an etching apparatus having the first electrode assembly described in the experimental process. The SAC and OCS etching processes were performed from September 24, 2000 to January 20, 2001. The number of particles remaining on the substrate was utilized by Kla-Tenc, USA. The measurement results of the scattering particle measurement system produced by the company are shown in Fig. 1A. The experimental β S A C # engraving process and the 0 c S last engraving process were both performed using an etching device having the second electrode assembly described in Experiment 丄. The SAC and 〇CS etching process was performed from September 24, 2001 to October 20, 2001. The number of particles remaining on the substrate was measured using a scattering particle measurement system produced by the Kla-Tencor company in the United States. The experimental results are shown in Figure 1 3B. Referring to Figures 12A and 12B, the left part of the diagram (to the left of the dotted line B) shows the number of particles when performing the SAC # etch process and 〇CS etching process using an etching device with a first conventional electrode assembly, The right part of the figure (to the right of the dotted line B) shows the number of particles when the SAC etching process and the ocs etching process are performed using an etching device with a second electrode assembly. The key marks in the figure indicate the etching used in the experiment. 200305184 The serial number of the device. In the side part, the obvious results can be seen from the figure. Comparing the left and right sides of the illustration with the bolts " Using the electrode assembly according to the present invention, the arc discharge between the electrode assemblies is reduced. The first 〇 丄 ZC and 1 2 D pictures are also the same. The yellow part is too respectful and the left part of the μ field (to ... the effect, the eclipse of the pieces shown in the figure) shows that when the number of groups with the second electrode group is used: The right part of the illustration of the particle size of the engraved process and the ocs㈣ process is shown when the number of the particle device with the third electrode assembly, ㈣ remaining process and 0㈡ is used. The key mark of the figure indicates the use in the experiment. The engraving: Compared to the left and right parts of the illustration, the arc discharge between the A 'electrode assembly and the bolt is shown. Engraving shows that when using the money with the first (conventional) electrode assembly to perform the SAC process and the number of particles = 1 3 B Figure shows the AC etching process and when using the last engraving device with the second electrode assembly The number of particles in the CS etching process. Similarly, the pass rate can be distinguished from Figures 13A and 13B. The pass rate is defined as the ratio of the number of particles to the number of substrates which is less than the allowable number and the total number of substrates. When using: The pass rate is about 51% at the time, and the cause can be blamed :: Arc Discharge of $. However, when a money engraving device with a second electrode assembly is used, the 'through rate is greatly improved to 9 5%' because the arc discharge has been suppressed :. Similarly, when the conventional electrode assembly is used, the average number of particles on the substrate is 24 200305184 2 3, and when the second electrode assembly is used, the number of particles on the substrate is 8. According to the present invention, there are a plurality of screw inspections having conductivity not lower than the conductivity of the electrode to which it is connected, and prevent the arc discharge between the electrode and the bolt, and have a conductivity greater than Electrode-conducting conductive films are placed between electrodes, which also prevents arcing between the electrodes. The filling material formed between the conductive film and the electrodes, and between the electrodes, fills the micro-aperture, which eliminates the discharge room of the group, and prevents the arc discharge between the conductive film and the electrodes, and Arcing. Therefore, the electrode assembly does not generate particles that contaminate the substrate, and the processing gas used to process the semiconductor substrate can be stably converted into plasma by the electrode assembly. _ Finally, although this matter has been described in detail above, different changes, substitutions, or variations can be made therein 'without departing from the spirit and scope of the invention as defined by the appended claims. [Brief description of the drawings] 1. The above-mentioned and other objects, features and advantages of the present invention will be more apparent with the following detailed description of the preferred embodiments of the present invention, and with reference to the accompanying drawings, among which: Figure 1 is a cross-sectional view of a conventional electrode assembly; Figure 2 is a photograph showing a surface of the conventional electrode assembly damaged by abnormal discharge; Figure 3 is an enlarged view of part A of the photograph in Figure 2; Figure 4 Fig. 1 is an enlarged view of the contact portion between the first electrode and the second electrode shown in Fig. 1; 25 200305184 sectional view of the embodiment; Fig. 5 is a diagram of an electrode assembly according to the present invention; Fig. 6 is an electrode assembly shown in a fifth® towel The exploded three-dimensional series 7 is the second electrode of the electrode assembly shown in FIG. 5 and the three-dimensional series 8 A to 8 D are enlarged views of the contact portions of the electrode assembly and the second electrode shown in FIG. 5. 9A to 9B are enlarged views of the first electrode and the second electrode contact portion of the electrode assembly according to another embodiment of the present invention; and FIG. 10 is a further embodiment according to the present invention. Electrode assembly Figures σ Figure 11 is a schematic illustration of a processing apparatus for processing a semiconductor substrate according to the present invention; Figures 1 2 A to 1 2 D show the etching performed by the processing apparatus shown in Figure ii Graphs of the number of particles generated during the process; Graphs 13 A to 13 B are graphs showing the particle throughput and the number of particles generated during the etching process performed by the processing device shown in FIG. 11. 2 Component symbol 1 0 0 Electrode assembly 1 0 1 RF power supply 1 0 2 First electrode 10 2a First perforation 1 0 4 Second electrode 26 200305184 1 0 4 a Coupling portion 104 B second perforation 1 〇 4 C First receiving bolt hole 1 0 6 Third electrode 106a Third perforation 1 0 8 First bolt 1 1 0 Second bolt 2 0 0 Electrode assembly 2 0 1 RF power source 202c First perforation 2 0 4 Second electrode 204a No. One surface 204b second surface 204c second perforation 2 0 4 d bonding portion 2 04 e central portion of the second electrode 2 0 4 h first groove 2 0 4 i second groove 2 0 4 j surface 2 0 6 Third electrode 206c Third perforation 2 0 8 First bolt 2 1 0 Second bolt 2 1 2 First cover portion 27 200305184 2 1 4 Second cover portion 2 1 6 Conductive film 2 1 6 a Conductive film 2 1 8 aFirst sealing element 2 1 8 bSecond sealing element 2 0 first aperture 2 2 second aperture 3 0 first filling material 3 2 second filling material 3 0 0 electrode assembly 3 0 1 RF power supply 3 0 2 first Electrode 3 0 2 c First perforation 3 0 4 Second electrode 3 04 a First surface 304c Second perforation 3 0 4 d Bonding part 304e Central part 3 0 4 i Second groove 3 0 8 First bolt 3 1 8 afirst seal element Item 3 1 8 b Second sealing element 4 0 0 Processing chamber 4 0 2 Gasket 28 200305184 4 0 4 Vacuum pump 4 0 6 Outlet line 4 0 8 Pressure control valve 4 1 0 Door 4 1 2 Gas supply unit
2929