200301407 A7 B7 五、發明説明（1 ) 【發明領域】 (請先閲讀背面之注意事項再填寫本頁j 本發明是關於顯影處理裝置以及顯影處理方法，特別 是關於對塗佈1 0 // m以上的厚膜光阻的被處理基板的表面 供給保持一定溫度的顯影液，進行顯影處理的顯影處理裝 置以及顯影方法。 【發明背景】 【習知技藝之說明】 習知已知有藉由對半導體晶圓等的被處理基板塗佈光 阻，使用微影技術將電路圖案轉移到光阻，然後藉由對圖 案形成面供給顯影液，以顯影塗佈光阻膜的潛像圖案，在 被處理基板的表面形成電路。 但是近年來隨著提高在半導體基板上形成的電路的積 集度，電路圖案的線寬變窄。配合此線寬變窄，在半導體 基板上使光阻膜曝光、顯影而形成的圖案的線寬也變窄。 經濟部智慧財產局員工消費合作社印製 在以顯影液顯影光阻膜時顯影液的溫度會影響圖案的 線寬。特別是在高精度的圖案形成上，顯影時的溫度管理 很重要。例如在日本特開平6- 1 63393號公報揭示有在浸漬 型顯影裝置中於顯影前用以使保持形成有光阻膜的半導體 基板的溫度於顯影液的設定溫度，且可傳送到顯影裝置， 位於其顯影裝置內的顯影槽以及取入其顯影槽的環境也進 行溫度調節。 而且，在混伴（Puddle)型顯影裝置中，在日本特開 200 1 - 1 02292號公報揭示在被處理基板上盛顯影液，然後加 -5- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 200301407 A7 B7 五、發明説明（2 ) (請先閱讀背面之注意事項再填寫本頁) 熱顯影液，在剛供給顯影液後若反應進行的話因發生由時 間滯後造成的顯影不均，故顯影液爲了不使顯影反應進行 而以低溫（5 °C )供給，加熱手段的遠紅外線被照射，顯影液 達處理溫度23 °C，然後提高顯影液到60 °C使顯影處理終 了。 【發明槪要】 但是，上述顯影裝置對在被處理物上塗佈1 0 // m以上 的厚膜光阻有顯影時間長，顯影處理速度降低的問題，而 且，伴隨著被處理物的大型化有必須使裝置全體大型化的 問題。再者，以噴淋（Shower)式供給顯影液的情形，到吐出 顯影液的瞬間爲止可維持在預定的溫度，惟吐出後因蒸發 使液的溫度或濃度變化，有難以維持於預定的顯影液性 會g，發生顯影不均的事情。 本發明乃鑒於上述問題所進行的創作，其目的爲提供 可縮短厚膜光組的顯影時間且可顯影大型的被處理物的緊 緻化的顯影裝置以及顯影方法。 經濟部智慧財產局員工消費合作社印製 應解決上述課題的本發明的顯影裝置，是透過熱交換 器一邊溫調一邊將由顯影液供給槽供給的顯影液供給到顯 影槽的光阻的顯影裝置，其中 在該顯影槽內保持被處理物於縱方向進行單片處理， 且一邊使被溫度調節的顯影液循環於顯影裝置內一邊進行 顯影處理，且調節該顯影液的溫調溫度爲40°C以上未滿60 〇C 。 -6- 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇'〆297公釐） 200301407 A7 B7 五、發明说明（3 ) (請先閱讀背面之注意事項再填寫本頁) 藉由在顯影槽保持被處理物於縱方向，不會增大顯影 裝置，使可顯影大型的被處理物爲可能。而且，藉由使溫 調於40°C以上未滿60°C的顯影液在顯影裝置內循環’可縮 減顯影時間爲習知的1/2〜1/3。再者’因不使顯影液如噴淋 式的一直流動，故可節約顯影液的使用量。 而且，與本發明有關的混伴型顯影裝置’是對被處理 物上由噴嘴供給顯影液，在一定時間經過後使吸盤（Chuck) 本體旋轉，甩開位於被處理物上的顯影液的混伴型光阻的 顯影裝置，其中 具備溫度調整器，設置有由此溫度調整器導出到外部 並且再度返回到溫度調整器的溫調水的循環路徑，以此循 環路徑的一部分溫調該噴嘴以及連接於此噴嘴的配管，且 以該循環路徑的其他一部分溫調該吸盤本體。 經濟部智慧財產局員工消費合作社印製 藉由溫調顯影液到噴嘴前端以供給到被處理物’相較 於在供給顯影液後過熱，可有效地防止顯影不良的發生。 而且，藉由以溫調水的循環路徑溫調顯影液以及吸盤本 體，可實現顯影裝置全體的緊緻化，而且因藉由吸盤由晶 圓背面溫調到預定溫度，故可防止顯影液吐出後的液溫降 低，使塗佈後的顯影液的面內分布均勻。 而且，對於前述顯影裝置可具備送入被溫調的空氣之 送風機，以及在將該被處理物傳入該顯影裝置內前預先加 熱到預定的溫度的加熱裝置。 藉由以這種構成，調整顯影裝置空間內的溫度，然後 將預先被溫調的被處理物傳入顯影裝置內，可穩定顯影裝 -7- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 200301407 A7 B7 五、發明説明（4 ) 置內的環境，可更有效地防止顯影不均。 Γ、靖先閲讀背面之注意事項再填寫本頁} 再者，該吸盤本體的溫調溫度、該顯影液的溫調逾 度、加熱該被處理物的加熱裝置的溫調溫度以及該送風_ 的溫調溫度都爲40°C以上未滿60°C較佳。此外，對於需g 嚴密地進行吸盤本體的溫度管理時，另外準備溫調裝置較 佳。 藉由令顯影液、吸盤本體、被處理物以及被傳送的空 氣爲40°C以上未滿60°C，可實現厚膜光阻的顯影時間縮短 化。 而且，使用與本發明有關的上述浸漬型顯影裝置以及 混伴型顯影裝置的顯影方法是一邊溫調顯影液到預定的溫 度一邊供給到被處理物，以顯影處理1 0 /z m以上的厚膜光 阻。 藉由直接供給被溫調到預定溫度（40°C以上未滿60°C) 的顯影液到被處理物，也能以短時間處理1 0 // m以上的厚 膜光阻的顯影。 經濟部智慧財產局員工消費合作社印製 【圖式之簡單說明】 圖1是與本發明有關的浸漬型顯影裝置的構成圖。 圖2是圖1所示的浸漬型顯影裝置的配管全體圖。 圖3是圖1所示的基板保持器的前視圖。 圖4是圖3所示的基板保持器的側視擴大圖。 圖5是圖4所示的基板保持器的Ι-Γ剖面圖。 圖6是與本發明有關的混伴型顯影裝置的構成圖。 -8- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 200301407 A7 B7 五、發明説明（5 ) 圖7是顯示圖6中的A到B的配管的部分剖面擴大 圖。 (請先閲讀背面之注意事項再填寫本頁) 【符號說明】 1:顯影液定量保持部 2:溫度感測器 3、10:水位檢測感測器 4:顯影液導入管 5:顯影槽 6:窺視窗 7:顯影液 8. ·導出管 9、 1 8、1 9:配管 10:水位檢測感測器 11:導電率計 12 、 24:蓋 1 3 .·間隔板 經濟部智慧財產局員工消費合作社印製 14 、 22:晶圓 1 5 :保持器 16:取出放入門 1 7 :溫度調節器 20:噴嘴 21:吸盤 23:反應室 -9 - 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 200301407 A7 B7 五、發明説明（6 ) 25:送風口 26:繫緊用具 (請先閲讀背面之注意事項再填寫本頁) 【較佳實施例之詳細說明】 以下說明本發明的實施形態。圖1是與本發明有關的 浸漬型顯影裝置的構成圖。此顯影裝置具有一旦It存〶頁^ 液供給的顯影液定量保持部1，在此顯影液定量保持部1內 ***檢測顯影液溫度的溫度感測器2與檢測顯影液的水位 水平的水位檢測感測器3與導入顯影液的顯影液導入管4 ° 而且，此顯影裝置具有顯影槽5，此顯影槽5與顯影液 定量保持部1連接而形成，在圖1所示的實施例於顯影槽5 的一'部分配設有窺視窗6。此窺視窗6右爲玻璃製、塑膠製 等的透明物的話佳。在顯影槽5的其他部分配設有用以使 顯影液7循環的導出管8，配設有排出顯影液7用的溢流用 的配管9。再者，於顯影槽5的底部配設有排出顯影液7的 排洩用的排洩孔。 經濟部智慧財產局員工消費合作社印製 在顯影槽5內與顯影液定量保持部1相同，配設有檢 測顯影液7的水位水平的水位檢測感測器1 0與觀察顯影液 7的狀態的導電率計11。 再者，在顯影槽5的開口部安裝蓋12。此蓋12是防止 顯影液7的蒸發或防止空氣中的碳酸氣體的混入用’爲了 氣密地***上述水位檢測感測器3、10、溫度感測器2、導 電率計11以及顯影液導入管4而設置幾個孔。 而且，在此蓋12的內面的一部分安裝有上下方向的間 -10- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 200301407 A7 _B7_ 五、發明説明（7 ) (請先閲讀背面之注意事項再填寫本頁) 隔板1 3的上端。在此間隔板1 3固定有保持被處理物的晶 圓或玻璃基板14的保持器15。此晶圓14藉由配設於蓋12 的取出放入門16由顯影槽5取出放入。 此外，間隔板1 3安裝於顯影槽5的底部也可以。 圖2是圖1所示的浸漬型顯影裝置的配管全體圖。如 圖2所示使顯影液溫調/循環的循環路徑主要由泵、過濾器 以及熱交換機構成，更安裝有排出顯影液用的廢液槽與連 接這些裝置的配管。 經濟部智慧財產局員工消費合作社印製 圖3是保持圖1所示的晶圓14的保持器15的前視擴 大圖。圖4以及圖5分別是保持器15的側視擴大圖以及保 持器15的Ι-Γ剖面圖。在本實施例間隔板13安裝有三個保 持器1 5。兩個保持器1 5-a設置於對顯影槽5相同高度的位 置，保持器15-b是用以載置晶圓14而設置於保持器15-a 的下方。三個保持器1 5都被以虛線表示的繫緊用具26固 定於間隔板1 3，依照晶圓1 4的大小使固定的位置可調整而 开多成。此外，間隔板1 3未必一^定需要也能代用顯影槽5的 側壁。再者，改變保持器1 5的形狀用以直接安裝於顯影槽 5的底部也可以。 在本發明的實施例所示的浸漬型顯影裝置，首先（1)、 由顯影液定量保持部1對顯影槽5供給新的顯影液7。此時 顯影槽5的排洩孔關閉，藉由泵使顯影液7經由顯影槽5、 熱交換機以及配管循環。（2)、一邊使顯影液7循環’一邊 透過熱交換機上升到預定的溫度（40°C以上未滿60°C ) ° 其次，（3 )、在附設於顯影槽5的上流側的導入部水位 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -H - 200301407 A7 B7 五、發明説明（8 ) 檢測感測器3檢測顯影液7貯存到必要的水位，然後溫度 感測器2檢測顯影液7上升到預定的溫度的話，顯影槽5 的取出放入門1 6打開將晶圓14傳入顯影槽5內。 然後，（4)、傳入的晶圓14對顯影槽5在縱方向被卡止 於保持器15。（5)、取出放入門16再度關閉開始顯影處 理。若爲開放狀態的話因液溫高，有因蒸發使顯影液7的 濃度變化之虞，故需蓋12。 然後，（6)、顯影處理以時間監視，晶圓14被浸漬於顯 影槽5內預定時間，（7)、藉由浸漬中顯影液7也持續循 環，以促進塗佈於晶圓14的光組的溶解，也防止顯影殘 留。而且，（8 )、預定的時間經過後取出放入門1 6打開取出 晶圓1 4。此外，處理中不供給新的顯影液，上述顯影處理 在關閉的狀態下進行。 在處理幾片晶圓1 4中顯影液7的能力下降。於是導電 率計1 1檢測出顯影液7無法保持顯影所需的鹼性濃度，停 止晶圓14的傳入，更換顯影液7。 更換顯影液7全部的情形停止熱交換機，打開排洩 孔，將所有顯影槽以及配管內的顯影液排出到廢液槽。然 後，關閉排洩孔，由顯影液定量保持部1供給顯影液7，返 回到（1)重複顯影處理。 而且，更換顯影液7 —部分的情形打開排洩孔一定時 間，僅排出一定量的顯影液（排洩），在導電率計Π的數値 回復到可顯影處理的數値爲止供給顯影液’然後’返回到 (1)重複顯影處理。此外，更換顯影液一部分的手段其他可 本紙張尺度適用中國國家樣準（CNS ) A4規格（210X297公釐） · 12 - ----------d衣-- (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 200301407 A7 B7 五、發明説明（9 ) 在晶圓14的傳出傳入時等的顯影處理時間外，藉由供給一 定（少量）的顯影液，可經常維持可處理的狀態的顯影液。 (請先閲讀背面之注意事項再填寫本頁) 如果使用這些手段的話，如前述的方法可不停止顯影 處理而繼續處理。再者而且在進行顯影處理中當顯影性會g 下降時爲了使顯影液的濃度回復，藉由供給顯影液的原液 (一般可考慮對負型光阻爲有機溶劑的二甲苯或丁基醋酸 等，而對正型光阻爲有機鹼系水溶液的TMAH(四甲基氫氧 化鏡，Tetramethyl anmmonium hydroxide)等）可令顯影液的 使用量爲少量。 再者，藉由在縱方向傳入傳出晶圓，使在顯影液中的 浸漬時間在晶圓的浸漬開始地點與浸漬終了地點稍有不 同。但因是厚膜光阻，故多少的顯影時間差也不發生顯影 處理不均等的不良影響。 經濟部智慧財產局員工消費合作社印製 在上述實施例所示的浸漬型顯影裝置，藉由在縱方向 設置晶圓於顯影槽內，可不增大顯影裝置，可處理大型的 晶圓。而且，藉由在溫調顯影液後供給晶圓，可大幅地減 少顯影時間。在表1顯示由顯影液的溫度與顯影時間所產 生的顯影狀態的評價。 此外’在本實施例中於晶圓上使膜厚爲20 // m而設置 東京應化工業（股份公司）製的正型光阻的PMER LA-900，中 介測試光罩圖案對照射紫外線的基板，使用東京應化工業 (股份公司）製PMER-7G來進行。 13- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公羡） 200301407 A7 __B7____ 五、發明説明（1〇 ) [表1] 浸漬型顯影裝置 光阻液：PMER LA-900 顯影液：PMER-7G 膜厚：20 // m 顯影溫度 23〇C 30°C 40°C 45〇C 50°C 60t： 顯影時間 6min 3min 2min 2min 2min 2min 顯影狀態 〇 〇 〇 〇 △ X 良好 良好 良好 良好 稍有龜裂 顯著龜裂 (請先閱讀背面之注意事項再填寫本頁) 其次，說明本發明的另一實施形態。圖6是與本發明 有關的混伴型顯影裝置的構成圖。此顯影裝置具備溫度調 整器1 7，由此溫度調整器1 7被溫調的水（以後記爲溫調水） 通過配管1 8沿著以箭頭所示的方向導出，並且再度返回到 溫度調整器1 7以形成溫調水的循環路徑。 經濟部智慧財產局員工消費合作社印製 此溫調水的循環路徑的配管1 8如圖7所示，成爲與傳 送顯影液的配管1 9雙重的構造。因此，溫調水由配管18 的A起點到B起點藉由熱交換來溫調顯影液。而且，在吐 出顯影液的配管19的頭部安裝噴嘴20，此噴嘴20也被溫 調水與配管19 一起被溫調。 再者，在上述溫調水的循環路徑的其他一部分溫調吸 盤21。如圖6所示吸盤21成爲在內部導入溫調水的構造。 固定於吸盤2 1頂面部的晶圓22預先被熱板溫調到預 定的溫度（40°C以上未滿6(TC )後，被傳送到吸盤21。 而且，上述吸盤21等被設置於反應室23內。在此反 應室23的上部安裝有蓋24。在蓋24的一部分配設有具有 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） _ _ 200301407 A7 B7 五、發明説明（11 ) 過濾器的形的送風口 25，被溫調到預定溫度的空氣被送入 反應室2 3內。 ----------^衣-- (請先閲讀背面之注意事項再填寫本頁) 在上述實施例所示的混伴型顯影裝置，透過溫調水的 循環路徑藉由同時溫調顯影液以及吸盤，可謀求顯影裝置 自身的緊緻化，並且可經常供給新鮮的顯影液，可避免在 晶圓微粒（Panicles)等的附著。 而且，如表2以及表3所示，藉由供給預先被溫調到 40°C以上未滿6(TC的顯影液，可加速塗佈於晶圓的光阻的 溶解，可大幅縮短顯影時間。此外，若顯影溫度低於40°C 的話，顯影時間不那麼短，相反地高到60°C以上的話會給 予本來必須殘留的光阻膜表面不良影響。 .、! 在表2針對顯影20 # m的厚膜，顯示由顯影液的溫度 與顯影時間所產生的顯影狀態的評價。在表3針對顯影40 // m的厚膜，顯示由顯影液的溫度與顯影時間所產生的顯 影狀態的評價。 此處在表2中，光阻使用東京應化工業（股份）製PMER LA-900，顯影液使用同PMER-7G。 經濟部智慧財產局員工消費合作社印製 在表3中，光阻使用同PMER CA-3000，顯影液使用同 PMER-7G。 本紙張尺度適用中國國家標隼（CNS ) A4規格（21〇'〆297公釐） -15- 200301407 A7 B7 五、發明説明（12 ) [表2] 混伴型顯影裝置 光阻液：PMER LA-900 顯影液： PMER-7G 膜厚：2 0 # m 顯影溫度 23t 30°C 40°C 45t： 5CTC 顯影時間 6min 3min 2min 2min 2min 顯影狀態 〇 〇 〇 〇 Δ 良好 良好 良好 良好 稍有龜裂 (請先閲讀背面之注意事項再填寫本頁) [表3] 光阻液：PMER CA-3000 顯影液：PMER-7G 膜厚：40# m 顯影溫度 23〇C 30°C 40°C 45〇C 50t 顯影時間 lOmin 5min 3min 2min 2min 顯影狀態 〇 〇 〇 〇 〇 良好 良好 良好 良好 良好 【發明的功效】 經濟部智慧財產局員工消費合作社印製 如以上的說明如果依照本發明，藉由在顯影槽保持被 處理物於縱方向，可不增大顯影裝置而顯影大型的被處理 物。而且，藉由使溫調於40°C以上未滿60°C的顯影液在顯 影裝置內循環，可縮減顯影時間爲習知的1/2〜1/3。再者， 因不使顯影液如噴淋式的一直流動，故可節約顯影液的使 用量。 而且，如果溫調顯影液到噴嘴前端以供給到被處理物 的話，相較於在供給顯影液後過熱，可有效地防止顯影不 -16- 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 200301407 A7 B7 五、發明説明（13 ) 良的發生。而且，藉由以溫調水的循環路徑溫調顯影液以 及吸盤本體，可實現顯影裝置全體的緊緻化’而且因藉由 吸盤使晶圓也由背面溫調到預定溫度，故可防止顯影液吐 出後的液溫降低，可以均勻溫度進行顯影處理。 而且，藉由被溫調的空氣調整顯影裝置空間內的溫 度，然後將預先被溫調的被處理物傳入顯影裝置內，可穩 定顯影裝置內的環境，可更有效地防止顯影不均。 而且，如果令顯影液、吸盤本體、被處理物以及被傳 送的空氣爲40°C以上未滿6(TC的話，可實現厚膜光阻的顯 影時間縮短化。 再者，如果直接供給被溫調到預定溫度（40 °C以上未滿 6(TC )的顯影液到被處理物，也能以短時間處理1 0 // m以上 的厚膜光阻的顯影。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 -17- 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇X：297公釐）200301407 A7 B7 V. Description of the invention (1) [Field of invention] (Please read the precautions on the back before filling out this page. J This invention is about developing processing device and developing processing method, especially about coating 1 0 // m The surface of the substrate to be processed having the above-mentioned thick film photoresist is supplied with a developing solution maintained at a constant temperature, and a developing processing device and a developing method for performing a developing process. [Background of the Invention] [Description of Conventional Techniques] A photoresist is applied to a substrate to be processed such as a wafer, and a circuit pattern is transferred to the photoresist using a lithography technique. Then, a developing solution is supplied to the pattern forming surface to develop a latent image pattern coated with the photoresist film. The circuit is formed on the surface of the substrate. However, in recent years, as the degree of accumulation of circuits formed on semiconductor substrates has been increased, the line width of circuit patterns has become narrower. In accordance with this line width, the photoresist film has been exposed and developed on the semiconductor substrate. The line width of the formed pattern also becomes narrower. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs prints the temperature of the developer when developing the photoresist film with the developer. The line width of the pattern. Especially in high-precision pattern formation, temperature management during development is important. For example, Japanese Unexamined Patent Publication No. 6-63393 discloses the use of a dip-type developing device to maintain the formation before development. The temperature of the semiconductor substrate with the photoresist film is at the set temperature of the developing solution, and it can be transferred to the developing device, and the temperature of the developing tank located in the developing device and the environment taken into the developing tank can also be adjusted. In the Puddle) type developing device, it is disclosed in Japanese Patent Laid-Open No. 200 1-1 02292 that a developing solution is held on a substrate to be processed, and then the paper size is -5-. This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 200301407 A7 B7 V. Description of the invention (2) (Please read the precautions on the back before filling in this page) Thermal developer. Immediately after the developer is supplied, if the reaction proceeds, uneven development due to time lag will occur, so development The liquid is supplied at a low temperature (5 ° C) so that the developing reaction does not proceed. The far infrared rays of the heating means are irradiated. The developing liquid reaches a processing temperature of 23 ° C. The development process is completed at 60 ° C. [Inventive summary] However, the above-mentioned developing device has the problems of long development time and reduced processing speed for coating a thick film photoresist of more than 10 // m on the object, and With the increase in the size of the object to be processed, it is necessary to increase the size of the entire device. Furthermore, in the case where the developer is supplied in a shower type, the developer can be maintained at a predetermined temperature until the developer is discharged. After discharging, the temperature or concentration of the liquid changes due to evaporation, and it is difficult to maintain a predetermined developing liquid property g, resulting in uneven development. The present invention has been made in view of the above problems, and its object is to provide a thick film that can be shortened. A development device and a development method capable of developing a compacted large object to be developed in the light development time. The consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed the developing device of the present invention that should solve the above-mentioned problems. It is a developing device that supplies the developer supplied from the developer supply tank to the photoresist of the development tank through the heat exchanger while temperature adjusting. Wherein, the object to be processed is maintained in the developing tank for single-chip processing in the longitudinal direction, and the temperature-adjusted developing solution is circulated in the developing device to perform the developing process, and the temperature of the developing solution is adjusted to 40 ° C. The above is less than 60 ℃. -6- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (21〇'297 mm) 200301407 A7 B7 V. Description of the invention (3) (Please read the precautions on the back before filling out this page) The developing tank keeps the object to be processed in the vertical direction without enlarging the developing device, making it possible to develop a large object to be processed. Further, by circulating a developer that is adjusted to a temperature of 40 ° C or higher and less than 60 ° C in the developing device, the development time can be shortened to a conventional 1/2 to 1/3. Furthermore, since the developing solution is not kept flowing like a shower type, the amount of the developing solution can be saved. In addition, the mixed-type developing device according to the present invention is a method in which a developer is supplied from a nozzle to an object to be processed, and a chuck body is rotated after a certain period of time has elapsed, and a mixture of the developer on the object to be processed is thrown away. A developing device with a companion photoresist, which includes a temperature adjuster, and is provided with a temperature-adjusted water circulation path from which the temperature adjuster leads to the outside and returns to the temperature adjuster again. The pipe connected to this nozzle is used to warm the sucker body with other parts of the circulation path. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. By adjusting the temperature of the developer to the front end of the nozzle and supplying it to the object, it is possible to effectively prevent the occurrence of poor development compared to overheating after supplying the developer. In addition, the temperature of the developer and the chuck body can be adjusted by the temperature-adjusted water circulation path, so that the entire developing device can be compacted, and the temperature of the developer can be adjusted from the back of the wafer to a predetermined temperature by the chuck, which prevents the developer from being spit out. The subsequent liquid temperature is reduced, so that the in-plane distribution of the applied developer is uniform. Further, the developing device may include a blower for sending temperature-controlled air, and a heating device for heating the object to be heated to a predetermined temperature in advance before the object to be processed is introduced into the developing device. With this structure, the temperature in the space of the developing device is adjusted, and then the object to be processed which has been temperature-adjusted is introduced into the developing device, so that the developing device can be stably developed. -7- This paper size applies to the Chinese National Standard (CNS) A4 (210X297 mm) 200301407 A7 B7 V. Description of the invention (4) The environment inside the installation can more effectively prevent uneven development. Γ, Jing first read the precautions on the back and then fill out this page} Furthermore, the temperature of the suction cup body, the temperature of the developer, the temperature of the developer, the temperature of the heating device to heat the object to be processed, and the air supply _ The temperature adjustment temperature is preferably above 40 ° C and less than 60 ° C. In addition, when the temperature of the suction cup body needs to be strictly controlled, it is better to prepare a temperature adjustment device. The development time of the thick film photoresist can be shortened by making the developer, the chuck body, the object to be processed, and the air to be conveyed 40 ° C or more and less than 60 ° C. In addition, the development method using the above-mentioned dipping type developing device and mixed type developing device according to the present invention is to supply the object to be processed while temperature-adjusting the developing solution to a predetermined temperature, and develop a thick film having a thickness of 10 / zm or more. Photoresist. By directly supplying the developing solution that has been temperature-adjusted to a predetermined temperature (above 40 ° C and below 60 ° C) to the object to be processed, it is also possible to process the development of a thick film photoresist with a thickness of 10m / m or more in a short time. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs [Simplified illustration of the drawing] FIG. 1 is a structural diagram of an immersion type developing device related to the present invention. FIG. 2 is an overall view of the piping of the immersion type developing device shown in FIG. 1. FIG. 3 is a front view of the substrate holder shown in FIG. 1. FIG. 4 is an enlarged side view of the substrate holder shown in FIG. 3. 5 is a cross-sectional view taken along the line I-Γ of the substrate holder shown in FIG. 4. FIG. 6 is a configuration diagram of a mixed-type developing device according to the present invention. -8- This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) 200301407 A7 B7 V. Description of the invention (5) Fig. 7 is an enlarged view of a partial cross section of the piping showing A to B in Fig. 6. (Please read the precautions on the back before filling this page) [Symbols] 1: Developer's quantitative holding unit 2: Temperature sensor 3, 10: Water level detection sensor 4: Developer's introduction tube 5: Development tank 6 : Peeping window 7: Developer 8. Outlet pipe 9, 1 8, 1 9: Piping 10: Water level detection sensor 11: Conductivity meter 12, 24: Cover 1 3 Printed by Consumer Cooperatives 14, 22: Wafer 1 5: Holder 16: Take out and put in door 1 7: Temperature regulator 20: Nozzle 21: Suction cup 23: Reaction chamber-9-This paper size applies Chinese National Standard (CNS) A4 specifications (210X297 mm) 200301407 A7 B7 V. Description of the invention (6) 25: Air outlet 26: Fastening device (please read the precautions on the back before filling this page) [Detailed description of the preferred embodiment] The following description Embodiments of the present invention. Fig. 1 is a configuration diagram of an immersion type developing device according to the present invention. This developing device includes a developer quantitative holding section 1 which is supplied with a liquid once it is stored therein. A temperature sensor 2 for detecting the temperature of the developer and a water level detection for detecting the level of the developer are inserted into the developer quantitative holding section 1. The sensor 3 is connected to the developer introduction tube 4 ° into which the developer is introduced. Furthermore, the developing device has a developer tank 5 which is formed by being connected to the developer quantitative holding portion 1. In the embodiment shown in FIG. A peep window 6 is assigned to one portion of the groove 5. It is preferable that the viewing window 6 is made of a transparent material such as glass or plastic. An outlet pipe 8 for circulating the developing solution 7 is distributed to the other parts of the developing tank 5, and an overflow pipe 9 for discharging the developing solution 7 is arranged. A drain hole for draining the developer solution 7 is provided in the bottom of the developing tank 5. The employee's cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs printed in the developing tank 5 is the same as the developer quantitative holding unit 1 and is equipped with a water level detection sensor 10 for detecting the level of the developer 7 and a device for observing the state of the developer 7 Conductivity meter 11. A cover 12 is attached to the opening of the developing tank 5. This cover 12 is used to prevent evaporation of the developing solution 7 or to prevent the incorporation of carbonic acid gas in the air. In order to hermetically insert the water level detection sensors 3 and 10, the temperature sensor 2, the conductivity meter 11, and the introduction of the developing solution. The tube 4 is provided with several holes. In addition, a part of the inner surface of the cover 12 is installed with a vertical direction. -10- This paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) 200301407 A7 _B7_ V. Description of the invention (7) (please first (Read the notes on the back and fill out this page) Top of the partition 1 3. A holder 15 holding a wafer or a glass substrate 14 of an object to be processed is fixed to the partition plate 13. This wafer 14 is taken out from the developing tank 5 by a take-out / insertion door 16 arranged on the cover 12. The spacers 13 may be attached to the bottom of the developing tank 5. FIG. 2 is an overall view of the piping of the immersion type developing device shown in FIG. 1. As shown in FIG. 2, the circulation path for temperature adjustment / circulation of the developer is mainly composed of a pump, a filter, and a heat exchanger, and a waste liquid tank for discharging the developer and a pipe connecting these devices are installed. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs Fig. 3 is an enlarged front view of a holder 15 holding the wafer 14 shown in Fig. 1. 4 and 5 are an enlarged side view of the holder 15 and a 1-Γ cross-sectional view of the holder 15, respectively. Three spacers 15 are mounted on the partition plate 13 in this embodiment. The two holders 1 5-a are provided at the same height as the developing tank 5. The holders 15-b are provided under the holders 15-a for mounting the wafer 14. The three holders 15 are fixed to the spacer plate 13 by the fastening means 26 shown by a dotted line, and the fixed positions can be adjusted and opened in accordance with the size of the wafer 14. In addition, the spacers 13 may not necessarily need to replace the side walls of the developing tank 5. In addition, the shape of the holder 15 may be changed to be directly attached to the bottom of the developing tank 5. In the immersion-type developing device shown in the embodiment of the present invention, first (1), a new developing solution 7 is supplied to the developing tank 5 from the developing solution quantitative holding section 1. At this time, the drain hole of the developing tank 5 is closed, and the developing solution 7 is circulated by the pump through the developing tank 5, the heat exchanger, and the piping. (2) Raise the developer solution to a predetermined temperature (40 ° C or more and less than 60 ° C) while circulating the developer 7 '. Secondly, (3), an introduction section provided on the upstream side of the developing tank 5 Water level This paper scale applies the Chinese National Standard (CNS) A4 specification (210X297 mm) -H-200301407 A7 B7 V. Description of the invention (8) The detection sensor 3 detects the developer solution 7 and stores it to the necessary water level, then the temperature is sensed When the device 2 detects that the developing solution 7 has risen to a predetermined temperature, the developing tank 5 is taken out and placed in the door 16 and the wafer 14 is introduced into the developing tank 5. Then, (4), the incoming wafer 14 is locked to the holder 15 in the longitudinal direction by the developing tank 5. (5) Take out the loading door 16 and close it again to start the developing process. If it is in the open state, the temperature of the liquid is high, and the concentration of the developer 7 may change due to evaporation. Therefore, the cover 12 is required. Then, (6), the development process is monitored by time, and the wafer 14 is immersed in the development tank 5 for a predetermined time. (7) The developer solution 7 is continuously circulated by the immersion to promote the light applied to the wafer 14. The dissolution of the group also prevents the development from remaining. Then, (8), after a predetermined time has elapsed, the take-in door 16 is opened and the take-out wafer 14 is opened. In addition, no new developing solution is supplied during the process, and the above-mentioned developing process is performed in a closed state. The ability of the developer 7 to be processed in several wafers 14 is reduced. Then, the conductivity meter 11 detects that the developing solution 7 cannot maintain the alkali concentration required for development, stops the introduction of the wafer 14, and replaces the developing solution 7. When all the developer solution 7 is replaced, the heat exchanger is stopped, the drain hole is opened, and the developer solution in all the developer tanks and pipes is discharged to the waste liquid tank. Then, the drain hole is closed, the developer solution 7 is supplied from the developer solution holding unit 1, and the process returns to (1) and the development process is repeated. Moreover, when the developer solution 7 is replaced in some cases, the drain hole is opened for a certain period of time, and only a certain amount of developer solution is discharged (drained), and the developer solution is supplied until the number of the conductivity meter Π returns to the number that can be processed. Returning to (1), the development process is repeated. In addition, other means of replacing the developer solution can be used in accordance with the Chinese National Standard (CNS) A4 size (210X297 mm). 12----------- d clothing-(Please read the back first Please note this page, please fill in this page) Order printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Consumer Cooperatives, 200301407 A7 B7 V. Description of the invention (9) Outside the development processing time such as when the wafer 14 is passed in and out, a certain amount of supply will be provided. (Small amount) of developer, which can often maintain a processable state. (Please read the precautions on the back before filling this page.) If you use these methods, you can continue processing without stopping the development process as described above. Furthermore, in order to restore the concentration of the developing solution when the developability is reduced during the developing process, the original solution of the developing solution is supplied (generally xylene or butylacetic acid which is an organic solvent for negative photoresist can be considered) TMAH (Tetramethyl anmmonium hydroxide, etc.), which is an organic alkaline aqueous solution for positive photoresist, can make the amount of developer used small. Furthermore, by passing the wafer in and out in the longitudinal direction, the immersion time in the developer is slightly different from the point where the wafer is immersed to the point where it is immersed. However, since it is a thick film photoresist, the adverse effects of uneven development processing do not occur even if the development time is slightly different. Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The immersion type developing device shown in the above embodiment can handle large wafers without increasing the developing device by arranging the wafer in the developing tank in the vertical direction. Furthermore, by supplying the wafer after the temperature-regulated developing solution, the development time can be greatly reduced. Table 1 shows the evaluation of the developing state by the temperature of the developing solution and the developing time. In addition, in the present embodiment, a positive photoresistor PMER LA-900 made by Tokyo Inochem Co., Ltd. was set to a film thickness of 20 // m on the wafer, and the test pattern of the intermediate mask was used to test The substrate was carried out using PMER-7G manufactured by Tokyo Chemical Industry Co., Ltd. 13- This paper size is in accordance with Chinese National Standard (CNS) A4 specification (210X297). 200301407 A7 __B7____ V. Description of the invention (10) [Table 1] Photoresist for immersion developing device: PMER LA-900 Developer: PMER -7G Film thickness: 20 // m Development temperature 23 ° C 30 ° C 40 ° C 45 ° C 50 ° C 60t: Development time 6min 3min 2min 2min 2min 2min Development state 〇〇〇〇 △ Good Significant cracking (please read the notes on the back before filling this page) Next, another embodiment of the present invention will be described. Fig. 6 is a configuration diagram of a mixing type developing device according to the present invention. This developing device is provided with a temperature adjuster 17, and the temperature-adjusted water (hereinafter referred to as temperature-adjusted water) of the temperature adjuster 17 is led through a pipe 18 in a direction indicated by an arrow, and returns to the temperature adjustment again. Device 17 to form a circulation path of temperature-regulated water. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs. The piping 18 of this temperature-regulated water circulation path has a double structure as the piping 19 for conveying the developer, as shown in FIG. 7. Therefore, the temperature-regulated water is temperature-regulated by the heat exchange from the A start point to the B start point of the pipe 18 by heat exchange. A nozzle 20 is attached to the head of the pipe 19 through which the developer is discharged, and this nozzle 20 is also temperature-controlled together with the pipe 19 with the temperature-adjusted water. Further, the suction cup 21 is temperature-adjusted in another part of the circulation path of the temperature-adjusted water. As shown in FIG. 6, the suction cup 21 has a structure in which temperature-adjusted water is introduced. The wafer 22 fixed to the top surface of the chuck 21 is adjusted to a predetermined temperature (40 ° C or higher and less than 6 (TC)) by a hot plate in advance, and then transferred to the chuck 21. The above-mentioned chuck 21 and the like are provided in a reaction Inside the chamber 23. A cover 24 is installed on the upper part of the reaction chamber 23. A part of the cover 24 is provided with a paper size applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) _ _ 200301407 A7 B7 V. Description of the invention (11) Filter-shaped air inlet 25, the air temperature adjusted to a predetermined temperature is sent into the reaction chamber 2 3. ---------- ^ 衣-(Please read the note on the back first Please fill in this page again) In the mixed-type developing device shown in the above embodiment, the temperature of the developer and the suction cup can be adjusted simultaneously through the circulation path of the temperature-adjusted water. Fresh developer solution can avoid adhesion to wafers (Panicles), etc. In addition, as shown in Table 2 and Table 3, by supplying developer solution that has been temperature-adjusted to 40 ° C or higher and less than 6 (TC, It can accelerate the dissolution of the photoresist applied to the wafer, which can greatly shorten the development time. If the developing temperature is lower than 40 ° C, the developing time is not so short. Conversely, if the developing temperature is higher than 60 ° C, it will adversely affect the surface of the photoresist film that must be left...! Table 2 is for developing 20 # m The thickness of the film shows the evaluation of the developing state caused by the temperature of the developing solution and the development time. Table 3 shows the evaluation of the state of development produced by the temperature of the developing solution and the development time for a thick film of 40 // m. Here, in Table 2, the photoresist uses PMER LA-900 manufactured by Tokyo Chemical Industry Co., Ltd. and the developer is the same as PMER-7G. It is printed in Table 3 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. It is the same as PMER CA-3000, and the developer is the same as PMER-7G. This paper size is applicable to China National Standard (CNS) A4 (21 ° '297 mm) -15- 200301407 A7 B7 V. Description of Invention (12) [ Table 2] Photoresist for mixed development device: PMER LA-900 Developer: PMER-7G Film thickness: 2 0 # m Developing temperature 23t 30 ° C 40 ° C 45t: 5CTC Developing time 6min 3min 2min 2min 2min Developing state 〇〇〇〇 △ Good good good good slightly Cracking (please read the precautions on the back before filling this page) [Table 3] Photoresist: PMER CA-3000 Developer: PMER-7G Film thickness: 40 # m Development temperature 23 ° C 30 ° C 40 ° C 45 ° C 50t development time 10min 5min 3min 2min 2min development state 〇〇〇〇〇 good good good good good [effect of the invention] printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs, as described above, if in accordance with the present invention, The developing tank holds the object to be processed in the longitudinal direction, and can develop a large object to be processed without increasing the developing device. Furthermore, by circulating the developer whose temperature is adjusted to 40 ° C or higher and less than 60 ° C in the developing device, it is possible to reduce the developing time to a conventional 1/2 to 1/3. Furthermore, since the developer is not continuously flowed, such as a shower type, the amount of developer used can be saved. In addition, if the temperature-adjusted developer is supplied to the front end of the nozzle to supply the object to be processed, compared with overheating after the developer is supplied, it can effectively prevent the development failure. -16- This paper applies the Chinese National Standard (CNS) A4 specification ( 210X297 mm) 200301407 A7 B7 V. Description of the invention (13) Good occurrence. In addition, by adjusting the temperature of the developer and the chuck body through the temperature-adjusted water circulation path, the entire developing device can be compacted. Furthermore, the chuck can also be used to adjust the temperature of the wafer from the back surface to a predetermined temperature. After the liquid is discharged, the temperature of the liquid is reduced, and the developing process can be performed at a uniform temperature. In addition, the temperature in the space of the developing device is adjusted by the temperature-controlled air, and then the object to be temperature-adjusted is introduced into the developing device, so that the environment in the developing device can be stabilized, and uneven development can be prevented more effectively. In addition, if the developer, the chuck body, the object to be processed, and the air to be conveyed are 40 ° C or higher and less than 6 ° C, the development time of the thick film photoresist can be shortened. Furthermore, if directly supplied to the substrate, Developers adjusted to a predetermined temperature (above 40 ° C and less than 6 (TC)) to the object to be processed can also be processed in a short time for development of a thick film photoresist with a length of 1 0 // m or more. (Please read the note on the back first Please fill in this page again) Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs -17- This paper size is applicable to the Chinese National Standard (CNS) A4 specification (21 ×: 297 mm)