SU439862A1 - Electrochemical method of producing thin layers of bismuth tellurium alloy - Google Patents
Electrochemical method of producing thin layers of bismuth tellurium alloyInfo
- Publication number
- SU439862A1 SU439862A1 SU1837147A SU1837147A SU439862A1 SU 439862 A1 SU439862 A1 SU 439862A1 SU 1837147 A SU1837147 A SU 1837147A SU 1837147 A SU1837147 A SU 1837147A SU 439862 A1 SU439862 A1 SU 439862A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- thin layers
- electrochemical method
- bismuth
- producing thin
- tellurium alloy
- Prior art date
Links
Landscapes
- Physical Vapour Deposition (AREA)
- Electrolytic Production Of Non-Metals, Compounds, Apparatuses Therefor (AREA)
Description
1one
Известен способ получени тонких слоев сплава теллура с висмутом, основанный на испарении этого сплава или его компонентов в вакууме с последующей кондепсацией паров па поверхности подложки.A known method of producing thin layers of an alloy of tellurium with bismuth, based on the evaporation of this alloy or its components in vacuum, followed by condensation of vapor on the surface of the substrate.
Способ требует сложной агишратуры, осуш ,ествл етс при повышенной температуре.The method requires complex agglomeration, drying, is carried out at elevated temperature.
С целью получени достаточно прочной, беспорпстой и блест щей полупроводпиковой нлеикп сплава теллура с висмутом па платпне и титане осаждение осуществл ют из неводпого раствора, состо щего из ТеСЦ, и BiCU в уксусной кислоте с добавлением iLiCl.In order to obtain a sufficiently strong, unsupported and glossy semiconductor alloy of tellurium with bismuth, platinum and titanium, the precipitation is carried out from a non-aqueous solution consisting of TeSC and BiCU in acetic acid with the addition of iLiCl.
Электрохимическое осаждение сплава теллура с висмутом на платипе и титане с целью получени равномерной и компактной пленки провод т из раствора, содержащего 5- 100 ммоль1л ТеСЦ и 20-115 ммоль1л Bids в уксусной кислоте.Electrochemical deposition of a tellurium alloy with bismuth on a platypus and titanium in order to obtain a uniform and compact film is carried out from a solution containing 5-100 mmol TeSC and 20-115 mmol Bids in acetic acid.
Процесс электролиза ведетс при добавлеfiHH в электролит 0,75 моль/л LiCl и плотности тока 0,5-5 ма1см. Электролиз провод т в стекл нном герметично закрытом электролизере с двум анодами из платины или графита, прокаленного при 300-350°С. Катодом служит титанова или платинова пластинка. Состав и компактность осадка зависит от соотнощени концентрации ТеСЦ и BiCU элрктролите .The electrolysis process is carried out by adding 0.75 mol / l LiCl to the electrolyte and a current density of 0.5-5 ma1cm. The electrolysis is carried out in a glass hermetically sealed cell with two anodes of platinum or graphite, calcined at 300-350 ° C. The cathode is a titanium or platinum plate. The composition and compactness of the sediment depends on the ratio of the concentration of TeSC and BiCU elrktrolit.
Напрнмер, равномерные плотные слои сплава висмут-теллур на платиновой пли титановой основе толщиной до 15-ик получают из электролита с соотношением Bids; TeCl4 отA uniform, uniformly dense layers of a bismuth-tellurium alloy on a platinum pl titanium base with a thickness of up to 15 ir is obtained from an electrolyte with a Bids ratio; TeCl4 from
25 : 1 до 1 : 5 при плотности тока до 5 ма1см-. Преимуществом предлагаемого способа вл етс то, что так можно получать более мелкокристаллические , а следовательно, и равномерно покрывающие поверхность катода слои25: 1 to 1: 5 at a current density of up to 5 ma1cm-. The advantage of the proposed method is that it is possible to obtain more crystalline and, therefore, evenly covering the surface of the cathode.
сплава висмут-теллур при более упрощепнои технологии в течение нескольких минут и прп компатной температуре.bismuth-tellurium alloy with a simpler technology within a few minutes and the temperature of the comp.
Предмет изобретени Subject invention
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1837147A SU439862A1 (en) | 1972-10-13 | 1972-10-13 | Electrochemical method of producing thin layers of bismuth tellurium alloy |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1837147A SU439862A1 (en) | 1972-10-13 | 1972-10-13 | Electrochemical method of producing thin layers of bismuth tellurium alloy |
Publications (1)
Publication Number | Publication Date |
---|---|
SU439862A1 true SU439862A1 (en) | 1974-08-15 |
Family
ID=20529514
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU1837147A SU439862A1 (en) | 1972-10-13 | 1972-10-13 | Electrochemical method of producing thin layers of bismuth tellurium alloy |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU439862A1 (en) |
-
1972
- 1972-10-13 SU SU1837147A patent/SU439862A1/en active
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