SU351476A1 - YESESOYUZNAZ ^ • Ci ^ V "i ^ _YY.Y; •!; ^ • r- • F ^ L ^ i: nATEJiiyu-IiJ •••" lBIBIIOTEKD - Google Patents
YESESOYUZNAZ ^ • Ci ^ V "i ^ _YY.Y; •!; ^ • r- • F ^ L ^ i: nATEJiiyu-IiJ •••" lBIBIIOTEKDInfo
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- SU351476A1 SU351476A1 SU1606161A SU1606161A SU351476A1 SU 351476 A1 SU351476 A1 SU 351476A1 SU 1606161 A SU1606161 A SU 1606161A SU 1606161 A SU1606161 A SU 1606161A SU 351476 A1 SU351476 A1 SU 351476A1
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- USSR - Soviet Union
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- yesesoyuznaz
- natejiiyu
- lbibiiotekd
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- temperature
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- 150000001875 compounds Chemical class 0.000 description 7
- 239000000463 material Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 4
- 229910052714 tellurium Inorganic materials 0.000 description 4
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- 230000002194 synthesizing Effects 0.000 description 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 2
- 229910052787 antimony Inorganic materials 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 239000012300 argon atmosphere Substances 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 125000004429 atoms Chemical group 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000875 corresponding Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000010445 mica Substances 0.000 description 1
- 229910052618 mica group Inorganic materials 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000006104 solid solution Substances 0.000 description 1
- 230000005619 thermoelectricity Effects 0.000 description 1
Description
Изобретение относитс к области термоэлектрического способа преобразовани энергии.The invention relates to the field of thermoelectric energy conversion.
Один из примен емых материалов в термоэлектричестве - 5Ь2Тёз, который вл етс матрицей твердого раствора дл низкотемпературного материала р-типа.One of the materials used in thermoelectricity is 5L2, which is a solid solution matrix for a p-type low-temperature material.
Известны различные способы получени дапного соедиьени . Одним из них вл етс синтез соединени SbgTes путем пр мого сплавлени компонент в соотношении, отвечающем стехиометрическому составу. Однако по такому способу получают соединение не стехиометрического состава, а с большнм избыпсом сурьмы. Сурьма, раствор сь в соединении и вл сь акцепторной примесью , обусловливает р-тип проводи.мости с концентрацией 1020-102 /см, котора превышает оптимальную с точки зрени термоэлектрической эффективиости дл любого предполагаемого рабочего иитервала температур .Various methods for the preparation of dap compounds are known. One of them is the synthesis of the SbgTes compound by direct fusion of the components in a ratio corresponding to the stoichiometric composition. However, by this method, the compound is obtained not with a stoichiometric composition, but with a large excess of antimony. Antimony, dissolving in the compound and being an acceptor impurity, determines the p-type conductivity with a concentration of 1020-102 / cm, which exceeds the optimum from the point of view of thermoelectric efficiency for any intended working temperature range.
Эффективность термоэлектрического материала определ етс параметром Z - . Полученные таким способом соединеви ЗЬаТез имеют при комнатной температуре следуюш,ие параметры: « 80 а ЗОООол1-сл -1; ,3-10- 1град. По предлагаемому способу, с целью увеличени термоэлектрической добротности, ни подложку, например, из слюды, подогретую до температуры 150-300°С, одним из способов, например испарением в вакууме, направл ютThe efficiency of the thermoelectric material is determined by the parameter Z -. The compounds obtained by this method have the following, at room temperature, parameters: “80 a ZOOOol1-sl -1; 3-10-1grad. In the proposed method, in order to increase the thermoelectric figure of merit, the substrate, for example, from mica, heated to a temperature of 150-300 ° C, one of the methods, for example by evaporation in vacuum, directs
пучок атомов либо молекул с превышением содержани теллура над сте.х-иометрическнм составом ЗЬоТез до 20 ат. %. На подложке происходнт синтез соединени ЗЬзТез. Избыточный теллур, конденсиру сь на нодложке,a beam of atoms or molecules with an excess of the tellurium content over the X-iometric composition of the BROTZ to 20 at. % On the substrate, synthesis of the compound is performed. Redundant tellurium, condensate on the pad,
частично раствор етс в соединенни 5Ь2Тез и частично вынадает во вторую фазу.partially dissolves in the 5B2 compound and partially discharges into the second phase.
Дл увеличени однородности состава ИЛ1; дл получени заданной концентрации носителей полученный материал подвергают гемогенизируюш ,ему отжигу в атмосфере аргоиа ( атм) при температуре 150-300 С. Затем провод т кратковременную (3-5 мин) отгонку непрореагнровавшего теллура в вакууме . При этом чем ниже температура отжпга из указанного интервала темиератур, тем ниже равновесна концентраци носителей.To increase the uniformity of the composition of IL1; to obtain a given carrier concentration, the resulting material is subjected to hemogenization, annealed in argon atmosphere (atm) at a temperature of 150-300 ° C. Then, short-term (3-5 min) distillation of unreacted tellurium in vacuum is carried out. In this case, the lower the temperature of an otgging from the specified interval of temperature, the lower the equilibrium concentration of the carriers.
При концентрации носителей 1-2-10 1,/с.« в образцах получают максимальную величину термо-э.д.с., равную 200 мкв./град и характернстику добротностн ,8-, /град. 3 путем синтеза с последующим отжигом, отличающийс тем, что, с целью увеличени термоэлектрической добротности, исходный матери л испар ют, конденсируют на подложке при 4 температуре 150-300°С и отжигают в атмосфере аргона при температуре 150-300°С, а непрореагировавший теллур испар ют в вакууме .When the concentration of carriers 1-2-10 1, / s. "In the samples get the maximum value of thermo-emf., Equal to 200 µv. / Deg and the characteristic of good quality, 8- / deg. 3 by synthesis with subsequent annealing, characterized in that, in order to increase thermoelectric figure of merit, the source material is evaporated, condensed on a substrate at 4 temperatures of 150-300 ° C and annealed in an atmosphere of argon at a temperature of 150-300 ° C, and unreacted the tellurium is evaporated in a vacuum.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1606161A SU390174A1 (en) | 1970-12-30 | 1970-12-30 | METHOD OF PREPARATION OF COPPER-NICKEL FINE STEEL TO FLOTATION SEPARATION |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU1606161A SU390174A1 (en) | 1970-12-30 | 1970-12-30 | METHOD OF PREPARATION OF COPPER-NICKEL FINE STEEL TO FLOTATION SEPARATION |
Publications (2)
Publication Number | Publication Date |
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SU351476A1 true SU351476A1 (en) | |
SU390174A1 SU390174A1 (en) | 1973-07-11 |
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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SU1606161A SU390174A1 (en) | 1970-12-30 | 1970-12-30 | METHOD OF PREPARATION OF COPPER-NICKEL FINE STEEL TO FLOTATION SEPARATION |
Country Status (1)
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SU (1) | SU390174A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4141778A (en) * | 1976-02-12 | 1979-02-27 | Domrachev Georgy A | Method of preparing crystalline compounds AIVA BVIA |
-
1970
- 1970-12-30 SU SU1606161A patent/SU390174A1/en active
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4141778A (en) * | 1976-02-12 | 1979-02-27 | Domrachev Georgy A | Method of preparing crystalline compounds AIVA BVIA |
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