SU1835967A1 - Method of measurement of parameters of semiconductor materials - Google Patents
Method of measurement of parameters of semiconductor materialsInfo
- Publication number
- SU1835967A1 SU1835967A1 SU4878933/25A SU4878933A SU1835967A1 SU 1835967 A1 SU1835967 A1 SU 1835967A1 SU 4878933/25 A SU4878933/25 A SU 4878933/25A SU 4878933 A SU4878933 A SU 4878933A SU 1835967 A1 SU1835967 A1 SU 1835967A1
- Authority
- SU
- USSR - Soviet Union
- Prior art keywords
- layer
- sample
- charge carriers
- impoverished
- impoverishing
- Prior art date
Links
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
FIELD: electronics. SUBSTANCE: semiconductor is irradiated by probing electromagnetic radiation which wave length is bigger than thickness of examined layer of semiconductor. Intensity of interference maxima of first or second order of reflected or passed-through signal is measured. Simultaneously with irradiation examined surface of sample is brought to contact with two resistively uncoupled regions of liquid electrolyte chemically neutral to material of sample. Constant voltage impoverishing layer of sample close to contact with charge carriers and alternating voltage are applied. Capacitance of impoverished layer is measured and its depth is determined. After this dependence of power of electromagnetic radiation absorbed in layer of examined part of sample non-impoverished by charge carriers on value of alternating voltage is plotted and by this dependence mobility of charge carriers on boundary of impoverished layer is calculated and by change of value of absorbed power of radiation in conductive layer with two adjacent values of depth of impoverished layer specific conductance is computed as well as concentration of charge carriers. Repeating these operations at higher values of impoverishing voltage till entire conductive layer of sample is subjected to impoverishment or till electric break-through of region of transport of spatial charge one calculates dependences of specific conductance, concentrations of charge carriers in sample and local conductance on depth of mobility. To raise locality of measurements substance which electrolytically dissociates under optic radiation is used as electrolyte. In this case constant impoverishing and alternating voltages are fed to formed conductive region with the aid of lattice of metal grids located in this substance which last pass excitation and probing radiations and has window which dimension does not exceed size of region of electrolytic dissociation. EFFECT: improved authenticity of measurements. 2 cl, 4 dwg
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4878933/25A SU1835967A1 (en) | 1990-10-29 | 1990-10-29 | Method of measurement of parameters of semiconductor materials |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SU4878933/25A SU1835967A1 (en) | 1990-10-29 | 1990-10-29 | Method of measurement of parameters of semiconductor materials |
Publications (1)
Publication Number | Publication Date |
---|---|
SU1835967A1 true SU1835967A1 (en) | 1996-02-20 |
Family
ID=60541397
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SU4878933/25A SU1835967A1 (en) | 1990-10-29 | 1990-10-29 | Method of measurement of parameters of semiconductor materials |
Country Status (1)
Country | Link |
---|---|
SU (1) | SU1835967A1 (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2464548C1 (en) * | 2011-05-17 | 2012-10-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" | Method of determining charge carrier concentration profile in semiconductor quantum-dimensional structure |
RU2750427C1 (en) * | 2020-10-20 | 2021-06-28 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" | Method for determining the electrical resistivity of semiconductors using infrared optics |
RU2785802C1 (en) * | 2022-01-10 | 2022-12-13 | Федеральное государственное бюджетное образовательное учреждение высшего образования "ОРЛОВСКИЙ ГОСУДАРСТВЕННЫЙ УНИВЕРСИТЕТ имени И.С. ТУРГЕНЕВА" (ОГУ им. И.С. Тургенева) | Method for determining the electrophysical characteristics of alloyed layers of silicon wafers |
-
1990
- 1990-10-29 SU SU4878933/25A patent/SU1835967A1/en active
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
RU2464548C1 (en) * | 2011-05-17 | 2012-10-20 | Федеральное государственное бюджетное образовательное учреждение высшего профессионального образования "Рязанский государственный радиотехнический университет" | Method of determining charge carrier concentration profile in semiconductor quantum-dimensional structure |
RU2750427C1 (en) * | 2020-10-20 | 2021-06-28 | Федеральное государственное бюджетное образовательное учреждение высшего образования "Тверской государственный университет" | Method for determining the electrical resistivity of semiconductors using infrared optics |
RU2785802C1 (en) * | 2022-01-10 | 2022-12-13 | Федеральное государственное бюджетное образовательное учреждение высшего образования "ОРЛОВСКИЙ ГОСУДАРСТВЕННЫЙ УНИВЕРСИТЕТ имени И.С. ТУРГЕНЕВА" (ОГУ им. И.С. Тургенева) | Method for determining the electrophysical characteristics of alloyed layers of silicon wafers |
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