SG47403A1 - Lithographic techniques - Google Patents

Lithographic techniques

Info

Publication number
SG47403A1
SG47403A1 SG1996000697A SG1996000697A SG47403A1 SG 47403 A1 SG47403 A1 SG 47403A1 SG 1996000697 A SG1996000697 A SG 1996000697A SG 1996000697 A SG1996000697 A SG 1996000697A SG 47403 A1 SG47403 A1 SG 47403A1
Authority
SG
Singapore
Prior art keywords
lithographic techniques
lithographic
techniques
Prior art date
Application number
SG1996000697A
Other languages
English (en)
Inventor
Christophe Pierrat
Joseph G Garofalo
Robert Louis Kostelak Jr
Sheila Vaidya
Original Assignee
At & T Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by At & T Corp filed Critical At & T Corp
Publication of SG47403A1 publication Critical patent/SG47403A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/29—Rim PSM or outrigger PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/30—Alternating PSM, e.g. Levenson-Shibuya PSM; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
SG1996000697A 1990-12-05 1991-11-28 Lithographic techniques SG47403A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US62267390A 1990-12-05 1990-12-05
US67360191A 1991-03-21 1991-03-21

Publications (1)

Publication Number Publication Date
SG47403A1 true SG47403A1 (en) 1998-04-17

Family

ID=27089252

Family Applications (1)

Application Number Title Priority Date Filing Date
SG1996000697A SG47403A1 (en) 1990-12-05 1991-11-28 Lithographic techniques

Country Status (5)

Country Link
US (1) US5275896A (de)
EP (1) EP0489542B1 (de)
JP (1) JP2593601B2 (de)
DE (1) DE69130389T2 (de)
SG (1) SG47403A1 (de)

Families Citing this family (38)

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US5465220A (en) 1992-06-02 1995-11-07 Fujitsu Limited Optical exposure method
US5350618A (en) * 1991-03-01 1994-09-27 Teijin Seiki Co., Ltd. Magnetic medium comprising a substrate having pits and grooves of specific shapes and depths
US5525534A (en) * 1992-03-13 1996-06-11 Fujitsu Limited Method of producing a semiconductor device using a reticle having a polygonal shaped hole
US5308721A (en) * 1992-06-29 1994-05-03 At&T Bell Laboratories Self-aligned method of making phase-shifting lithograhic masks having three or more phase-shifts
JPH0683029A (ja) * 1992-08-28 1994-03-25 Sony Corp 位相シフトマスク及びその作製方法
US5407785A (en) * 1992-12-18 1995-04-18 Vlsi Technology, Inc. Method for generating dense lines on a semiconductor wafer using phase-shifting and multiple exposures
JP2500423B2 (ja) * 1993-02-17 1996-05-29 日本電気株式会社 位相シフトマスクの検査方法
JPH07248469A (ja) * 1994-03-11 1995-09-26 Mitsubishi Electric Corp アパーチャおよびそのアパーチャを用いた光学装置
KR100399444B1 (ko) * 1995-06-30 2004-04-29 주식회사 하이닉스반도체 에지강조형위상반전마스크및그제조방법
JP4056571B2 (ja) * 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US5741624A (en) * 1996-02-13 1998-04-21 Micron Technology, Inc. Method for reducing photolithographic steps in a semiconductor interconnect process
US5906911A (en) * 1997-03-28 1999-05-25 International Business Machines Corporation Process of forming a dual damascene structure in a single photoresist film
US5908718A (en) * 1997-03-31 1999-06-01 Nec Corporation Phase shifting photomask with two different transparent regions
US5981148A (en) * 1997-07-17 1999-11-09 International Business Machines Corporation Method for forming sidewall spacers using frequency doubling hybrid resist and device formed thereby
US5972570A (en) * 1997-07-17 1999-10-26 International Business Machines Corporation Method of photolithographically defining three regions with one mask step and self aligned isolation structure formed thereby
US6185473B1 (en) 1998-01-08 2001-02-06 Micron Technology, Inc. Optical pattern transfer tool
TW388004B (en) * 1998-04-03 2000-04-21 United Microelectronics Corp Alternating phase shift mask
US20050032351A1 (en) * 1998-12-21 2005-02-10 Mou-Shiung Lin Chip structure and process for forming the same
AU2001247687A1 (en) * 2000-03-30 2001-10-15 Tokyo Electron Limited Dry silylation plasma etch process
US7045444B2 (en) 2000-12-19 2006-05-16 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device that includes selectively adding a noble gas element
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
TWI221645B (en) * 2001-01-19 2004-10-01 Semiconductor Energy Lab Method of manufacturing a semiconductor device
US7115453B2 (en) * 2001-01-29 2006-10-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method of the same
JP2002231627A (ja) * 2001-01-30 2002-08-16 Semiconductor Energy Lab Co Ltd 光電変換装置の作製方法
US7141822B2 (en) * 2001-02-09 2006-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP4993810B2 (ja) 2001-02-16 2012-08-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5088993B2 (ja) * 2001-02-16 2012-12-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
US7052943B2 (en) 2001-03-16 2006-05-30 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a semiconductor device
JP4718700B2 (ja) 2001-03-16 2011-07-06 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6812081B2 (en) * 2001-03-26 2004-11-02 Semiconductor Energy Laboratory Co.,.Ltd. Method of manufacturing semiconductor device
US6798073B2 (en) 2001-12-13 2004-09-28 Megic Corporation Chip structure and process for forming the same
US7374976B2 (en) * 2002-11-22 2008-05-20 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating thin film transistor
US20040265748A1 (en) * 2003-06-30 2004-12-30 Robert Bristol Pattern transfer of an extreme ultraviolet imaging layer via flood exposure of contact mask layer (EUV CML)
JP2015102608A (ja) * 2013-11-22 2015-06-04 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2015106001A (ja) * 2013-11-29 2015-06-08 Hoya株式会社 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
JP2017076146A (ja) * 2016-12-26 2017-04-20 Hoya株式会社 フォトマスクの製造方法、フォトマスク、パターン転写方法及び表示装置の製造方法
JP2017068281A (ja) * 2016-12-27 2017-04-06 Hoya株式会社 フォトマスクの製造方法、パターン転写方法及び表示装置の製造方法
US11764062B2 (en) * 2017-11-13 2023-09-19 Taiwan Semiconductor Manufacturing Company, Ltd. Method of forming semiconductor structure

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3930857A (en) * 1973-05-03 1976-01-06 International Business Machines Corporation Resist process
JPS61273545A (ja) * 1985-05-29 1986-12-03 Mitsubishi Electric Corp フオトマスク
JPH0690504B2 (ja) * 1985-06-21 1994-11-14 株式会社日立製作所 ホトマスクの製造方法
US4751170A (en) * 1985-07-26 1988-06-14 Nippon Telegraph And Telephone Corporation Silylation method onto surface of polymer membrane and pattern formation process by the utilization of silylation method
US4772539A (en) * 1987-03-23 1988-09-20 International Business Machines Corporation High resolution E-beam lithographic technique
US4985374A (en) * 1989-06-30 1991-01-15 Kabushiki Kaisha Toshiba Making a semiconductor device with ammonia treatment of photoresist
JPH0451151A (ja) * 1990-06-19 1992-02-19 Fujitsu Ltd 位相シフトレチクルの製作方法
JPH04128843A (ja) * 1990-09-20 1992-04-30 Fujitsu Ltd 露光用マスク製作方法

Also Published As

Publication number Publication date
US5275896A (en) 1994-01-04
DE69130389T2 (de) 1999-04-29
DE69130389D1 (de) 1998-11-26
EP0489542A2 (de) 1992-06-10
EP0489542A3 (en) 1992-09-23
EP0489542B1 (de) 1998-10-21
JPH04274238A (ja) 1992-09-30
JP2593601B2 (ja) 1997-03-26

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