SG166781A1 - Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same
- Google Patents
Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same
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Priority claimed from KR1020070065874Aexternal-prioritypatent/KR100943020B1/en
Priority claimed from KR1020070065272Aexternal-prioritypatent/KR100916995B1/en
Application filed by Cheil Ind IncfiledCriticalCheil Ind Inc
Publication of SG166781A1publicationCriticalpatent/SG166781A1/en
Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices
(AREA)
Abstract
A slurry composition for chemical mechanical polishing (CMP) of a phase- change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.
SG201007852-5A2007-06-292008-04-16Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same
SG166781A1
(en)
Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same
Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same
Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same