SG166781A1 - Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same - Google Patents

Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same

Info

Publication number
SG166781A1
SG166781A1 SG201007852-5A SG2010078525A SG166781A1 SG 166781 A1 SG166781 A1 SG 166781A1 SG 2010078525 A SG2010078525 A SG 2010078525A SG 166781 A1 SG166781 A1 SG 166781A1
Authority
SG
Singapore
Prior art keywords
change memory
memory device
phase
polishing
slurry composition
Prior art date
Application number
SG201007852-5A
Inventor
Tae Young Lee
In Kyung Lee
Byoung Ho Choi
Yong Soon Park
Original Assignee
Cheil Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020070065874A external-priority patent/KR100943020B1/en
Priority claimed from KR1020070065272A external-priority patent/KR100916995B1/en
Application filed by Cheil Ind Inc filed Critical Cheil Ind Inc
Publication of SG166781A1 publication Critical patent/SG166781A1/en

Links

Landscapes

  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

A slurry composition for chemical mechanical polishing (CMP) of a phase- change memory device is provided. The slurry composition comprises deionized water, a nitrogenous compound, and optionally abrasive particles, an oxidizing agent, or a combination thereof The slurry composition can polish a phase-change memory device at a high rate, can achieve high polishing selectivity between a phase-change memory material and a polish stop layer (e.g., a silicon oxide film), and can minimize the occurrence of processing imperfections (e.g., dishing and erosion) to provide a high-quality polished surface. Further provided is a method for polishing a phase-change memory device using the slurry composition.
SG201007852-5A 2007-06-29 2008-04-16 Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same SG166781A1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020070065874A KR100943020B1 (en) 2007-06-29 2007-06-29 CMP slurry composition for the phase change memory materials and polishing method using the same
KR1020070065272A KR100916995B1 (en) 2007-06-29 2007-06-29 Preparing Method for a Ornament

Publications (1)

Publication Number Publication Date
SG166781A1 true SG166781A1 (en) 2010-12-29

Family

ID=43859905

Family Applications (1)

Application Number Title Priority Date Filing Date
SG201007852-5A SG166781A1 (en) 2007-06-29 2008-04-16 Chemical mechanical polishing slurry composition for polishing phase- change memory device and method for polishing phase-change memory device using the same

Country Status (1)

Country Link
SG (1) SG166781A1 (en)

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