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Application filed by Sensfab Pte LtdfiledCriticalSensfab Pte Ltd
Priority to SG200401970-9ApriorityCriticalpatent/SG147285A1/en
Publication of SG147285A1publicationCriticalpatent/SG147285A1/en
DRY REACTIVE ION ETCHING A method of etching a wafer includes the steps of applying a dry film resist to a surface to be etched, curing the dry film resist, patterning the dry film resist to expose areas of the wafer to be etched, etching the wafer with a dry reactive ion etch and removing the remaining dry film resist.
SG200401970-9A2004-04-072004-04-07Dry reactive ion etching
SG147285A1
(en)