SG141216A1 - Method of forming cosix - Google Patents

Method of forming cosix

Info

Publication number
SG141216A1
SG141216A1 SG200305748-6A SG2003057486A SG141216A1 SG 141216 A1 SG141216 A1 SG 141216A1 SG 2003057486 A SG2003057486 A SG 2003057486A SG 141216 A1 SG141216 A1 SG 141216A1
Authority
SG
Singapore
Prior art keywords
cosix
forming
forming cosix
Prior art date
Application number
SG200305748-6A
Inventor
Tu An-Chun
Huang Jenn-Ming
Original Assignee
Taiwan Semiconductor Mfg
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg filed Critical Taiwan Semiconductor Mfg
Publication of SG141216A1 publication Critical patent/SG141216A1/en

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

Method of Forming Cosix
SG200305748-6A 2003-06-16 2003-09-29 Method of forming cosix SG141216A1 (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46240303A 2003-06-16 2003-06-16

Publications (1)

Publication Number Publication Date
SG141216A1 true SG141216A1 (en) 2008-04-28

Family

ID=34519942

Family Applications (1)

Application Number Title Priority Date Filing Date
SG200305748-6A SG141216A1 (en) 2003-06-16 2003-09-29 Method of forming cosix

Country Status (3)

Country Link
CN (1) CN1295760C (en)
SG (1) SG141216A1 (en)
TW (1) TW200501247A (en)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010059547A (en) * 1999-12-30 2001-07-06 박종섭 Method for forming metal line in semiconductor device
US6281102B1 (en) * 2000-01-13 2001-08-28 Integrated Device Technology, Inc. Cobalt silicide structure for improving gate oxide integrity and method for fabricating same
US6468904B1 (en) * 2001-06-18 2002-10-22 Taiwan Semiconductor Manufacturing Company RPO process for selective CoSix formation
KR20030002757A (en) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 Method of forming a cobalt silicide epitaxy layer
KR20030095093A (en) * 2002-06-11 2003-12-18 동부전자 주식회사 Method for making silicide of semiconductor

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100220253B1 (en) * 1996-12-27 1999-09-15 김영환 Method of manufacturing mosfet
US5902129A (en) * 1997-04-07 1999-05-11 Lsi Logic Corporation Process for forming improved cobalt silicide layer on integrated circuit structure using two capping layers

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010059547A (en) * 1999-12-30 2001-07-06 박종섭 Method for forming metal line in semiconductor device
US6281102B1 (en) * 2000-01-13 2001-08-28 Integrated Device Technology, Inc. Cobalt silicide structure for improving gate oxide integrity and method for fabricating same
US6468904B1 (en) * 2001-06-18 2002-10-22 Taiwan Semiconductor Manufacturing Company RPO process for selective CoSix formation
KR20030002757A (en) * 2001-06-29 2003-01-09 주식회사 하이닉스반도체 Method of forming a cobalt silicide epitaxy layer
KR20030095093A (en) * 2002-06-11 2003-12-18 동부전자 주식회사 Method for making silicide of semiconductor

Also Published As

Publication number Publication date
CN1295760C (en) 2007-01-17
TW200501247A (en) 2005-01-01
CN1574249A (en) 2005-02-02

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