SG141216A1 - Method of forming cosix - Google Patents
Method of forming cosixInfo
- Publication number
- SG141216A1 SG141216A1 SG200305748-6A SG2003057486A SG141216A1 SG 141216 A1 SG141216 A1 SG 141216A1 SG 2003057486 A SG2003057486 A SG 2003057486A SG 141216 A1 SG141216 A1 SG 141216A1
- Authority
- SG
- Singapore
- Prior art keywords
- cosix
- forming
- forming cosix
- Prior art date
Links
Landscapes
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Method of Forming Cosix
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US46240303A | 2003-06-16 | 2003-06-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
SG141216A1 true SG141216A1 (en) | 2008-04-28 |
Family
ID=34519942
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG200305748-6A SG141216A1 (en) | 2003-06-16 | 2003-09-29 | Method of forming cosix |
Country Status (3)
Country | Link |
---|---|
CN (1) | CN1295760C (en) |
SG (1) | SG141216A1 (en) |
TW (1) | TW200501247A (en) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010059547A (en) * | 1999-12-30 | 2001-07-06 | 박종섭 | Method for forming metal line in semiconductor device |
US6281102B1 (en) * | 2000-01-13 | 2001-08-28 | Integrated Device Technology, Inc. | Cobalt silicide structure for improving gate oxide integrity and method for fabricating same |
US6468904B1 (en) * | 2001-06-18 | 2002-10-22 | Taiwan Semiconductor Manufacturing Company | RPO process for selective CoSix formation |
KR20030002757A (en) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | Method of forming a cobalt silicide epitaxy layer |
KR20030095093A (en) * | 2002-06-11 | 2003-12-18 | 동부전자 주식회사 | Method for making silicide of semiconductor |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100220253B1 (en) * | 1996-12-27 | 1999-09-15 | 김영환 | Method of manufacturing mosfet |
US5902129A (en) * | 1997-04-07 | 1999-05-11 | Lsi Logic Corporation | Process for forming improved cobalt silicide layer on integrated circuit structure using two capping layers |
-
2003
- 2003-09-29 SG SG200305748-6A patent/SG141216A1/en unknown
- 2003-10-14 TW TW092128377A patent/TW200501247A/en unknown
- 2003-10-28 CN CNB2003101033216A patent/CN1295760C/en not_active Expired - Lifetime
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20010059547A (en) * | 1999-12-30 | 2001-07-06 | 박종섭 | Method for forming metal line in semiconductor device |
US6281102B1 (en) * | 2000-01-13 | 2001-08-28 | Integrated Device Technology, Inc. | Cobalt silicide structure for improving gate oxide integrity and method for fabricating same |
US6468904B1 (en) * | 2001-06-18 | 2002-10-22 | Taiwan Semiconductor Manufacturing Company | RPO process for selective CoSix formation |
KR20030002757A (en) * | 2001-06-29 | 2003-01-09 | 주식회사 하이닉스반도체 | Method of forming a cobalt silicide epitaxy layer |
KR20030095093A (en) * | 2002-06-11 | 2003-12-18 | 동부전자 주식회사 | Method for making silicide of semiconductor |
Also Published As
Publication number | Publication date |
---|---|
CN1295760C (en) | 2007-01-17 |
TW200501247A (en) | 2005-01-01 |
CN1574249A (en) | 2005-02-02 |
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